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int64 0 2k | instruction stringlengths 945 985 | output stringlengths 5.12k 5.16k |
|---|---|---|
300 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.09 micrometers and it is doped with Phosphorus at a concentration of 161634023235503620096 cm^-3. The short gate region is of the material Diamond with a length of 0.77 micrometers and it is doped with Arsenic at a concentration of 385282827513850232832 cm^-3. The long gate region is of the material Diamond with a length of 0.74 micrometers and it is doped with Arsenic at a concentration of 163932141718196224000 cm^-3. The drain region is of the material GaN with a length of 0.09 micrometers and it is doped with Arsenic at a concentration of 160718812245472739328 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.005)
(define Lgs 0.77)
(define Lgl 0.74)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.09)
(define Ld 0.09)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
161634023235503620096
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
385282827513850232832
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
163932141718196224000
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
160718812245472739328
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
301 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.74 micrometers and it is doped with Arsenic at a concentration of 104193882992447062016 cm^-3. The short gate region is of the material GaN with a length of 0.38 micrometers and it is doped with Boron at a concentration of 543988997790337466368 cm^-3. The long gate region is of the material Germanium with a length of 0.94 micrometers and it is doped with Arsenic at a concentration of 292900241803930402816 cm^-3. The drain region is of the material GaN with a length of 0.74 micrometers and it is doped with Arsenic at a concentration of 713929308918390456320 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.006)
(define Lgs 0.38)
(define Lgl 0.94)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.74)
(define Ld 0.74)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
104193882992447062016
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
543988997790337466368
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
292900241803930402816
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
713929308918390456320
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
302 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.5 micrometers and it is doped with Phosphorus at a concentration of 987211472643177971712 cm^-3. The short gate region is of the material Diamond with a length of 0.25 micrometers and it is doped with Boron at a concentration of 129955702252576456704 cm^-3. The long gate region is of the material Germanium with a length of 0.63 micrometers and it is doped with Phosphorus at a concentration of 602550538193933172736 cm^-3. The drain region is of the material SiGe with a length of 0.5 micrometers and it is doped with Boron at a concentration of 505601482193026940928 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.009)
(define Lgs 0.25)
(define Lgl 0.63)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.5)
(define Ld 0.5)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
987211472643177971712
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
129955702252576456704
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
602550538193933172736
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
505601482193026940928
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
303 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.8 micrometers and it is doped with Phosphorus at a concentration of 359905125392800940032 cm^-3. The short gate region is of the material SiGe with a length of 0.99 micrometers and it is doped with Phosphorus at a concentration of 895277701309192077312 cm^-3. The long gate region is of the material GaN with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 499496331139718316032 cm^-3. The drain region is of the material Germanium with a length of 0.8 micrometers and it is doped with Phosphorus at a concentration of 847669677980708372480 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.009)
(define Lgs 0.99)
(define Lgl 0.62)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.8)
(define Ld 0.8)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
359905125392800940032
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
895277701309192077312
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
499496331139718316032
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
847669677980708372480
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
304 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.88 micrometers and it is doped with Phosphorus at a concentration of 966468596805582323712 cm^-3. The short gate region is of the material Germanium with a length of 0.88 micrometers and it is doped with Boron at a concentration of 398913307639215947776 cm^-3. The long gate region is of the material Germanium with a length of 0.36 micrometers and it is doped with Phosphorus at a concentration of 698154068724973568000 cm^-3. The drain region is of the material GaN with a length of 0.88 micrometers and it is doped with Boron at a concentration of 364940568007508099072 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.001)
(define Lgs 0.88)
(define Lgl 0.36)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.88)
(define Ld 0.88)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
966468596805582323712
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
398913307639215947776
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
698154068724973568000
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
364940568007508099072
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
305 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.95 micrometers and it is doped with Phosphorus at a concentration of 622395814209477804032 cm^-3. The short gate region is of the material Silicon with a length of 0.48 micrometers and it is doped with Phosphorus at a concentration of 750789039266145107968 cm^-3. The long gate region is of the material SiGe with a length of 0.64 micrometers and it is doped with Boron at a concentration of 14549345375333042176 cm^-3. The drain region is of the material GaN with a length of 0.95 micrometers and it is doped with Arsenic at a concentration of 431883081800787427328 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.004)
(define Lgs 0.48)
(define Lgl 0.64)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.95)
(define Ld 0.95)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
622395814209477804032
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
750789039266145107968
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
14549345375333042176
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
431883081800787427328
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
306 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.72 micrometers and it is doped with Phosphorus at a concentration of 922562416138392174592 cm^-3. The short gate region is of the material GaN with a length of 0.2 micrometers and it is doped with Phosphorus at a concentration of 408871576557005832192 cm^-3. The long gate region is of the material GaN with a length of 0.8 micrometers and it is doped with Arsenic at a concentration of 915867864754844860416 cm^-3. The drain region is of the material Silicon with a length of 0.72 micrometers and it is doped with Boron at a concentration of 670844797016932876288 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.008)
(define Lgs 0.2)
(define Lgl 0.8)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.72)
(define Ld 0.72)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
922562416138392174592
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
408871576557005832192
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
915867864754844860416
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
670844797016932876288
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
307 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.32 micrometers and it is doped with Phosphorus at a concentration of 984634796151941234688 cm^-3. The short gate region is of the material SiGe with a length of 0.92 micrometers and it is doped with Boron at a concentration of 184071160209219420160 cm^-3. The long gate region is of the material Silicon with a length of 0.31 micrometers and it is doped with Arsenic at a concentration of 260847615844510040064 cm^-3. The drain region is of the material Diamond with a length of 0.32 micrometers and it is doped with Arsenic at a concentration of 740779466987599560704 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.007)
(define Lgs 0.92)
(define Lgl 0.31)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.32)
(define Ld 0.32)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
984634796151941234688
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
184071160209219420160
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
260847615844510040064
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
740779466987599560704
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
308 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 308023379853207142400 cm^-3. The short gate region is of the material SiGe with a length of 0.05 micrometers and it is doped with Arsenic at a concentration of 176231381431993597952 cm^-3. The long gate region is of the material Diamond with a length of 0.16 micrometers and it is doped with Phosphorus at a concentration of 259286840617948708864 cm^-3. The drain region is of the material SiGe with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 741253372274888802304 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.008)
(define Lgs 0.05)
(define Lgl 0.16)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.02)
(define Ld 0.02)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
308023379853207142400
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
176231381431993597952
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
259286840617948708864
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
741253372274888802304
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
309 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 100703736902513983488 cm^-3. The short gate region is of the material Germanium with a length of 0.1 micrometers and it is doped with Arsenic at a concentration of 918694754946067464192 cm^-3. The long gate region is of the material Diamond with a length of 0.24 micrometers and it is doped with Boron at a concentration of 379538569366001549312 cm^-3. The drain region is of the material Silicon with a length of 0.76 micrometers and it is doped with Arsenic at a concentration of 549725905956962435072 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.003)
(define Lgs 0.1)
(define Lgl 0.24)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.76)
(define Ld 0.76)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
100703736902513983488
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
918694754946067464192
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
379538569366001549312
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
549725905956962435072
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
310 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.38 micrometers and it is doped with Boron at a concentration of 345370078342629556224 cm^-3. The short gate region is of the material Diamond with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 474294421561391185920 cm^-3. The long gate region is of the material Silicon with a length of 0.13 micrometers and it is doped with Phosphorus at a concentration of 47533323050221715456 cm^-3. The drain region is of the material Germanium with a length of 0.38 micrometers and it is doped with Boron at a concentration of 471931450178908979200 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.009)
(define Lgs 0.23)
(define Lgl 0.13)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.38)
(define Ld 0.38)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
345370078342629556224
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
474294421561391185920
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
47533323050221715456
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
471931450178908979200
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
311 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 475142823985881808896 cm^-3. The short gate region is of the material Silicon with a length of 0.98 micrometers and it is doped with Phosphorus at a concentration of 875409172991218548736 cm^-3. The long gate region is of the material Silicon with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 248413398947431809024 cm^-3. The drain region is of the material Silicon with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 429386187653179506688 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.002)
(define Lgs 0.98)
(define Lgl 0.55)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.59)
(define Ld 0.59)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
475142823985881808896
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
875409172991218548736
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
248413398947431809024
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
429386187653179506688
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
312 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 733057388697552551936 cm^-3. The short gate region is of the material Silicon with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 281469801749301821440 cm^-3. The long gate region is of the material Diamond with a length of 0.23 micrometers and it is doped with Boron at a concentration of 883609709493448212480 cm^-3. The drain region is of the material Germanium with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 285718760875655888896 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.002)
(define Lgs 0.93)
(define Lgl 0.23)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.3)
(define Ld 0.3)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
733057388697552551936
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
281469801749301821440
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
883609709493448212480
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
285718760875655888896
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
313 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.77 micrometers and it is doped with Arsenic at a concentration of 464039316136997945344 cm^-3. The short gate region is of the material SiGe with a length of 0.77 micrometers and it is doped with Boron at a concentration of 924952286069563850752 cm^-3. The long gate region is of the material Diamond with a length of 0.61 micrometers and it is doped with Boron at a concentration of 345579111704187371520 cm^-3. The drain region is of the material Germanium with a length of 0.77 micrometers and it is doped with Phosphorus at a concentration of 763935249817223168000 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.003)
(define Lgs 0.77)
(define Lgl 0.61)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.77)
(define Ld 0.77)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
464039316136997945344
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
924952286069563850752
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
345579111704187371520
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
763935249817223168000
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
314 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 464852116025987301376 cm^-3. The short gate region is of the material SiGe with a length of 0.78 micrometers and it is doped with Boron at a concentration of 462932224906313203712 cm^-3. The long gate region is of the material Germanium with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 435435641925528322048 cm^-3. The drain region is of the material SiGe with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 186228330938992164864 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.004)
(define Lgs 0.78)
(define Lgl 0.23)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.4)
(define Ld 0.4)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
464852116025987301376
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
462932224906313203712
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
435435641925528322048
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
186228330938992164864
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
315 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.1 micrometers and it is doped with Arsenic at a concentration of 838024011425700642816 cm^-3. The short gate region is of the material Diamond with a length of 0.93 micrometers and it is doped with Boron at a concentration of 993217347813535907840 cm^-3. The long gate region is of the material Germanium with a length of 0.52 micrometers and it is doped with Boron at a concentration of 355134148118135570432 cm^-3. The drain region is of the material GaN with a length of 0.1 micrometers and it is doped with Boron at a concentration of 242669795677343416320 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.009)
(define Lgs 0.93)
(define Lgl 0.52)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.1)
(define Ld 0.1)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
838024011425700642816
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
993217347813535907840
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
355134148118135570432
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
242669795677343416320
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
316 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.51 micrometers and it is doped with Boron at a concentration of 265627522972616425472 cm^-3. The short gate region is of the material SiGe with a length of 0.42 micrometers and it is doped with Boron at a concentration of 7170544744435246080 cm^-3. The long gate region is of the material Diamond with a length of 0.96 micrometers and it is doped with Boron at a concentration of 675197048221170663424 cm^-3. The drain region is of the material Germanium with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 745910834709609971712 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.002)
(define Lgs 0.42)
(define Lgl 0.96)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.51)
(define Ld 0.51)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
265627522972616425472
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
7170544744435246080
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
675197048221170663424
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
745910834709609971712
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
317 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.97 micrometers and it is doped with Arsenic at a concentration of 409924412429984202752 cm^-3. The short gate region is of the material Diamond with a length of 0.92 micrometers and it is doped with Phosphorus at a concentration of 741389229147252064256 cm^-3. The long gate region is of the material Silicon with a length of 0.86 micrometers and it is doped with Boron at a concentration of 986926440790683418624 cm^-3. The drain region is of the material Germanium with a length of 0.97 micrometers and it is doped with Boron at a concentration of 443533223118462124032 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.004)
(define Lgs 0.92)
(define Lgl 0.86)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.97)
(define Ld 0.97)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
409924412429984202752
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
741389229147252064256
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
986926440790683418624
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
443533223118462124032
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
318 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.38 micrometers and it is doped with Arsenic at a concentration of 349256137844498628608 cm^-3. The short gate region is of the material GaN with a length of 0.09 micrometers and it is doped with Arsenic at a concentration of 940048190670940667904 cm^-3. The long gate region is of the material SiGe with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 410459908988756426752 cm^-3. The drain region is of the material Diamond with a length of 0.38 micrometers and it is doped with Phosphorus at a concentration of 609915523281970921472 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.003)
(define Lgs 0.09)
(define Lgl 0.3)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.38)
(define Ld 0.38)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
349256137844498628608
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
940048190670940667904
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
410459908988756426752
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
609915523281970921472
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
319 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.67 micrometers and it is doped with Phosphorus at a concentration of 484022165076501725184 cm^-3. The short gate region is of the material Silicon with a length of 0.42 micrometers and it is doped with Arsenic at a concentration of 432232903652989075456 cm^-3. The long gate region is of the material Germanium with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 524016756369011638272 cm^-3. The drain region is of the material Diamond with a length of 0.67 micrometers and it is doped with Phosphorus at a concentration of 31474843402607910912 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.009)
(define Lgs 0.42)
(define Lgl 0.02)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.67)
(define Ld 0.67)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
484022165076501725184
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
432232903652989075456
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
524016756369011638272
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
31474843402607910912
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
320 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.2 micrometers and it is doped with Arsenic at a concentration of 138001202498572697600 cm^-3. The short gate region is of the material SiGe with a length of 0.66 micrometers and it is doped with Boron at a concentration of 370377293018496630784 cm^-3. The long gate region is of the material GaN with a length of 0.25 micrometers and it is doped with Phosphorus at a concentration of 517664784782735048704 cm^-3. The drain region is of the material GaN with a length of 0.2 micrometers and it is doped with Arsenic at a concentration of 735699634990903853056 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.009)
(define Lgs 0.66)
(define Lgl 0.25)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.2)
(define Ld 0.2)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
138001202498572697600
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
370377293018496630784
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
517664784782735048704
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
735699634990903853056
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
321 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.73 micrometers and it is doped with Phosphorus at a concentration of 256511744165441732608 cm^-3. The short gate region is of the material Germanium with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 763328689882111410176 cm^-3. The long gate region is of the material Silicon with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 364590205185601830912 cm^-3. The drain region is of the material SiGe with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 628038347594208641024 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.004)
(define Lgs 0.34)
(define Lgl 0.82)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.73)
(define Ld 0.73)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
256511744165441732608
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
763328689882111410176
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
364590205185601830912
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
628038347594208641024
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
322 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.02 micrometers and it is doped with Boron at a concentration of 993077474461741350912 cm^-3. The short gate region is of the material GaN with a length of 0.26 micrometers and it is doped with Phosphorus at a concentration of 593150828994427355136 cm^-3. The long gate region is of the material Germanium with a length of 0.72 micrometers and it is doped with Boron at a concentration of 685478797491502579712 cm^-3. The drain region is of the material Germanium with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 628529896106344841216 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.004)
(define Lgs 0.26)
(define Lgl 0.72)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.02)
(define Ld 0.02)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
993077474461741350912
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
593150828994427355136
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
685478797491502579712
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
628529896106344841216
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
323 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.69 micrometers and it is doped with Phosphorus at a concentration of 66329825692047040512 cm^-3. The short gate region is of the material Germanium with a length of 0.42 micrometers and it is doped with Boron at a concentration of 772153647839019532288 cm^-3. The long gate region is of the material Diamond with a length of 0.74 micrometers and it is doped with Boron at a concentration of 441474729451253923840 cm^-3. The drain region is of the material Diamond with a length of 0.69 micrometers and it is doped with Arsenic at a concentration of 263040787369040445440 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.003)
(define Lgs 0.42)
(define Lgl 0.74)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.69)
(define Ld 0.69)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
66329825692047040512
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
772153647839019532288
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
441474729451253923840
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
263040787369040445440
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
324 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.13 micrometers and it is doped with Phosphorus at a concentration of 74994142569050390528 cm^-3. The short gate region is of the material GaN with a length of 0.32 micrometers and it is doped with Arsenic at a concentration of 714727432977361534976 cm^-3. The long gate region is of the material Diamond with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 413243946783983665152 cm^-3. The drain region is of the material Germanium with a length of 0.13 micrometers and it is doped with Boron at a concentration of 455542111667365871616 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.01)
(define Lgs 0.32)
(define Lgl 0.15)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.13)
(define Ld 0.13)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
74994142569050390528
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
714727432977361534976
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
413243946783983665152
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
455542111667365871616
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
325 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.71 micrometers and it is doped with Boron at a concentration of 815510035200993525760 cm^-3. The short gate region is of the material Germanium with a length of 0.59 micrometers and it is doped with Arsenic at a concentration of 656294812856666030080 cm^-3. The long gate region is of the material Diamond with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 151517717932404211712 cm^-3. The drain region is of the material Silicon with a length of 0.71 micrometers and it is doped with Arsenic at a concentration of 399994603949596082176 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.004)
(define Lgs 0.59)
(define Lgl 0.16)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.71)
(define Ld 0.71)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
815510035200993525760
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
656294812856666030080
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
151517717932404211712
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
399994603949596082176
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
326 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.49 micrometers and it is doped with Boron at a concentration of 508395295845275926528 cm^-3. The short gate region is of the material Diamond with a length of 0.48 micrometers and it is doped with Arsenic at a concentration of 523646426852244193280 cm^-3. The long gate region is of the material Germanium with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 382077672161176584192 cm^-3. The drain region is of the material SiGe with a length of 0.49 micrometers and it is doped with Phosphorus at a concentration of 645813094113757888512 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.005)
(define Lgs 0.48)
(define Lgl 0.81)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.49)
(define Ld 0.49)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
508395295845275926528
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
523646426852244193280
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
382077672161176584192
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
645813094113757888512
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
327 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.64 micrometers and it is doped with Phosphorus at a concentration of 827236095855481847808 cm^-3. The short gate region is of the material SiGe with a length of 0.97 micrometers and it is doped with Boron at a concentration of 369324416335632531456 cm^-3. The long gate region is of the material SiGe with a length of 0.1 micrometers and it is doped with Boron at a concentration of 539347963572893253632 cm^-3. The drain region is of the material Silicon with a length of 0.64 micrometers and it is doped with Phosphorus at a concentration of 49670607263555411968 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.009)
(define Lgs 0.97)
(define Lgl 0.1)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.64)
(define Ld 0.64)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
827236095855481847808
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
369324416335632531456
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
539347963572893253632
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
49670607263555411968
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
328 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.13 micrometers and it is doped with Phosphorus at a concentration of 666906639372522225664 cm^-3. The short gate region is of the material Diamond with a length of 0.34 micrometers and it is doped with Boron at a concentration of 440143114938509033472 cm^-3. The long gate region is of the material Silicon with a length of 0.57 micrometers and it is doped with Phosphorus at a concentration of 261637364321403535360 cm^-3. The drain region is of the material SiGe with a length of 0.13 micrometers and it is doped with Arsenic at a concentration of 98049532288838582272 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.004)
(define Lgs 0.34)
(define Lgl 0.57)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.13)
(define Ld 0.13)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
666906639372522225664
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
440143114938509033472
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
261637364321403535360
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
98049532288838582272
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
329 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 525562820610466512896 cm^-3. The short gate region is of the material Germanium with a length of 0.61 micrometers and it is doped with Arsenic at a concentration of 304392238397803593728 cm^-3. The long gate region is of the material Silicon with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 758026635101976526848 cm^-3. The drain region is of the material Silicon with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 294780179924308164608 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.003)
(define Lgs 0.61)
(define Lgl 0.71)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.55)
(define Ld 0.55)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
525562820610466512896
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
304392238397803593728
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
758026635101976526848
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
294780179924308164608
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
330 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.8 micrometers and it is doped with Arsenic at a concentration of 662112065155426156544 cm^-3. The short gate region is of the material Germanium with a length of 0.61 micrometers and it is doped with Phosphorus at a concentration of 846901354374152454144 cm^-3. The long gate region is of the material Germanium with a length of 0.95 micrometers and it is doped with Phosphorus at a concentration of 677297220285529194496 cm^-3. The drain region is of the material Diamond with a length of 0.8 micrometers and it is doped with Phosphorus at a concentration of 845680532436844806144 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.003)
(define Lgs 0.61)
(define Lgl 0.95)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.8)
(define Ld 0.8)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
662112065155426156544
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
846901354374152454144
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
677297220285529194496
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
845680532436844806144
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
331 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.26 micrometers and it is doped with Boron at a concentration of 840960973427988365312 cm^-3. The short gate region is of the material Diamond with a length of 0.52 micrometers and it is doped with Phosphorus at a concentration of 743507061366110420992 cm^-3. The long gate region is of the material GaN with a length of 0.26 micrometers and it is doped with Arsenic at a concentration of 682682340199283687424 cm^-3. The drain region is of the material SiGe with a length of 0.26 micrometers and it is doped with Boron at a concentration of 961630005357262798848 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.003)
(define Lgs 0.52)
(define Lgl 0.26)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.26)
(define Ld 0.26)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
840960973427988365312
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
743507061366110420992
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
682682340199283687424
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
961630005357262798848
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
332 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 589016171100549283840 cm^-3. The short gate region is of the material SiGe with a length of 0.39 micrometers and it is doped with Boron at a concentration of 690934999154789580800 cm^-3. The long gate region is of the material Silicon with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 428132651835791245312 cm^-3. The drain region is of the material GaN with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 870062948679233568768 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.001)
(define Lgs 0.39)
(define Lgl 0.24)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.82)
(define Ld 0.82)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
589016171100549283840
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
690934999154789580800
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
428132651835791245312
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
870062948679233568768
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
333 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.86 micrometers and it is doped with Phosphorus at a concentration of 571510792062108827648 cm^-3. The short gate region is of the material Silicon with a length of 0.74 micrometers and it is doped with Boron at a concentration of 359386729167258648576 cm^-3. The long gate region is of the material SiGe with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 55528750772598915072 cm^-3. The drain region is of the material Diamond with a length of 0.86 micrometers and it is doped with Boron at a concentration of 642894867943248887808 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.004)
(define Lgs 0.74)
(define Lgl 0.73)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.86)
(define Ld 0.86)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
571510792062108827648
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
359386729167258648576
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
55528750772598915072
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
642894867943248887808
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
334 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.26 micrometers and it is doped with Phosphorus at a concentration of 486292250105051348992 cm^-3. The short gate region is of the material SiGe with a length of 0.89 micrometers and it is doped with Phosphorus at a concentration of 966769031894351478784 cm^-3. The long gate region is of the material Silicon with a length of 0.29 micrometers and it is doped with Boron at a concentration of 702055603681552367616 cm^-3. The drain region is of the material Silicon with a length of 0.26 micrometers and it is doped with Phosphorus at a concentration of 729432251002769899520 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.004)
(define Lgs 0.89)
(define Lgl 0.29)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.26)
(define Ld 0.26)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
486292250105051348992
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
966769031894351478784
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
702055603681552367616
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
729432251002769899520
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
335 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.78 micrometers and it is doped with Boron at a concentration of 828199349132133269504 cm^-3. The short gate region is of the material Germanium with a length of 0.85 micrometers and it is doped with Boron at a concentration of 477836275563988123648 cm^-3. The long gate region is of the material Germanium with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 248448789226072932352 cm^-3. The drain region is of the material Silicon with a length of 0.78 micrometers and it is doped with Boron at a concentration of 787237875724282494976 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.01)
(define Lgs 0.85)
(define Lgl 0.71)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.78)
(define Ld 0.78)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
828199349132133269504
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
477836275563988123648
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
248448789226072932352
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
787237875724282494976
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
336 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.13 micrometers and it is doped with Boron at a concentration of 972223585303046914048 cm^-3. The short gate region is of the material SiGe with a length of 0.03 micrometers and it is doped with Boron at a concentration of 355755773328341336064 cm^-3. The long gate region is of the material SiGe with a length of 0.06 micrometers and it is doped with Boron at a concentration of 890207921056639221760 cm^-3. The drain region is of the material SiGe with a length of 0.13 micrometers and it is doped with Arsenic at a concentration of 239317128139546984448 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.005)
(define Lgs 0.03)
(define Lgl 0.06)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.13)
(define Ld 0.13)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
972223585303046914048
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
355755773328341336064
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
890207921056639221760
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
239317128139546984448
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
337 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.38 micrometers and it is doped with Arsenic at a concentration of 180850542169403588608 cm^-3. The short gate region is of the material GaN with a length of 0.72 micrometers and it is doped with Boron at a concentration of 609060632127551963136 cm^-3. The long gate region is of the material Germanium with a length of 0.7 micrometers and it is doped with Phosphorus at a concentration of 554535259423479431168 cm^-3. The drain region is of the material Diamond with a length of 0.38 micrometers and it is doped with Phosphorus at a concentration of 415709078486465511424 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.007)
(define Lgs 0.72)
(define Lgl 0.7)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.38)
(define Ld 0.38)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
180850542169403588608
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
609060632127551963136
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
554535259423479431168
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
415709078486465511424
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
338 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.72 micrometers and it is doped with Boron at a concentration of 642548802021863587840 cm^-3. The short gate region is of the material SiGe with a length of 0.18 micrometers and it is doped with Arsenic at a concentration of 447297693028941824000 cm^-3. The long gate region is of the material Germanium with a length of 0.72 micrometers and it is doped with Phosphorus at a concentration of 466443972492639338496 cm^-3. The drain region is of the material Germanium with a length of 0.72 micrometers and it is doped with Boron at a concentration of 897300400017164206080 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.005)
(define Lgs 0.18)
(define Lgl 0.72)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.72)
(define Ld 0.72)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
642548802021863587840
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
447297693028941824000
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
466443972492639338496
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
897300400017164206080
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
339 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.17 micrometers and it is doped with Phosphorus at a concentration of 734684099151735029760 cm^-3. The short gate region is of the material Germanium with a length of 0.76 micrometers and it is doped with Arsenic at a concentration of 212237288908746358784 cm^-3. The long gate region is of the material Silicon with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 824633928854995599360 cm^-3. The drain region is of the material GaN with a length of 0.17 micrometers and it is doped with Phosphorus at a concentration of 881486785862658162688 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.001)
(define Lgs 0.76)
(define Lgl 0.96)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.17)
(define Ld 0.17)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
734684099151735029760
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
212237288908746358784
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
824633928854995599360
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
881486785862658162688
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
340 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.57 micrometers and it is doped with Boron at a concentration of 570544540646487228416 cm^-3. The short gate region is of the material Germanium with a length of 0.81 micrometers and it is doped with Boron at a concentration of 764624328845403095040 cm^-3. The long gate region is of the material SiGe with a length of 0.05 micrometers and it is doped with Boron at a concentration of 271125301347168681984 cm^-3. The drain region is of the material Silicon with a length of 0.57 micrometers and it is doped with Phosphorus at a concentration of 780945110001692573696 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.005)
(define Lgs 0.81)
(define Lgl 0.05)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.57)
(define Ld 0.57)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
570544540646487228416
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
764624328845403095040
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
271125301347168681984
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
780945110001692573696
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
341 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.19 micrometers and it is doped with Boron at a concentration of 53599821571191504896 cm^-3. The short gate region is of the material Germanium with a length of 0.86 micrometers and it is doped with Phosphorus at a concentration of 947537123328066715648 cm^-3. The long gate region is of the material GaN with a length of 0.57 micrometers and it is doped with Phosphorus at a concentration of 885412955578921254912 cm^-3. The drain region is of the material Silicon with a length of 0.19 micrometers and it is doped with Boron at a concentration of 30912577119796215808 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.007)
(define Lgs 0.86)
(define Lgl 0.57)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.19)
(define Ld 0.19)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
53599821571191504896
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
947537123328066715648
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
885412955578921254912
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
30912577119796215808
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
342 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.08 micrometers and it is doped with Arsenic at a concentration of 112130921946704756736 cm^-3. The short gate region is of the material Diamond with a length of 0.33 micrometers and it is doped with Phosphorus at a concentration of 27839295396063272960 cm^-3. The long gate region is of the material Silicon with a length of 0.86 micrometers and it is doped with Boron at a concentration of 840566287152741744640 cm^-3. The drain region is of the material GaN with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 455816040255145902080 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.001)
(define Lgs 0.33)
(define Lgl 0.86)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.08)
(define Ld 0.08)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
112130921946704756736
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
27839295396063272960
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
840566287152741744640
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
455816040255145902080
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
343 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.95 micrometers and it is doped with Phosphorus at a concentration of 479782892547275096064 cm^-3. The short gate region is of the material SiGe with a length of 0.39 micrometers and it is doped with Phosphorus at a concentration of 664365281946179338240 cm^-3. The long gate region is of the material Silicon with a length of 0.62 micrometers and it is doped with Arsenic at a concentration of 89303047313657937920 cm^-3. The drain region is of the material Germanium with a length of 0.95 micrometers and it is doped with Arsenic at a concentration of 764343609430525476864 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.008)
(define Lgs 0.39)
(define Lgl 0.62)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.95)
(define Ld 0.95)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
479782892547275096064
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
664365281946179338240
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
89303047313657937920
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
764343609430525476864
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
344 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.73 micrometers and it is doped with Boron at a concentration of 836054879399359414272 cm^-3. The short gate region is of the material Diamond with a length of 0.78 micrometers and it is doped with Boron at a concentration of 760970315029562654720 cm^-3. The long gate region is of the material GaN with a length of 0.12 micrometers and it is doped with Boron at a concentration of 952900986291930267648 cm^-3. The drain region is of the material SiGe with a length of 0.73 micrometers and it is doped with Boron at a concentration of 150454665742689927168 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.004)
(define Lgs 0.78)
(define Lgl 0.12)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.73)
(define Ld 0.73)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
836054879399359414272
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
760970315029562654720
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
952900986291930267648
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
150454665742689927168
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
345 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.06 micrometers and it is doped with Boron at a concentration of 239924379490716844032 cm^-3. The short gate region is of the material Diamond with a length of 0.52 micrometers and it is doped with Phosphorus at a concentration of 398822058265259933696 cm^-3. The long gate region is of the material Diamond with a length of 0.83 micrometers and it is doped with Arsenic at a concentration of 859806889431590502400 cm^-3. The drain region is of the material Diamond with a length of 0.06 micrometers and it is doped with Boron at a concentration of 747672251861545254912 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.01 micrometers.
| (define tox 0.007)
(define Lgs 0.52)
(define Lgl 0.83)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.06)
(define Ld 0.06)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
239924379490716844032
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
398822058265259933696
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
859806889431590502400
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
747672251861545254912
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
346 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.59 micrometers and it is doped with Arsenic at a concentration of 79675973019642855424 cm^-3. The short gate region is of the material GaN with a length of 0.94 micrometers and it is doped with Arsenic at a concentration of 263597697014455762944 cm^-3. The long gate region is of the material Diamond with a length of 0.62 micrometers and it is doped with Boron at a concentration of 672204354146161262592 cm^-3. The drain region is of the material SiGe with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 615214045103866380288 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.004)
(define Lgs 0.94)
(define Lgl 0.62)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.59)
(define Ld 0.59)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
79675973019642855424
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
263597697014455762944
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
672204354146161262592
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
615214045103866380288
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
347 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.74 micrometers and it is doped with Boron at a concentration of 96929326042180370432 cm^-3. The short gate region is of the material GaN with a length of 0.52 micrometers and it is doped with Arsenic at a concentration of 982008277704235155456 cm^-3. The long gate region is of the material SiGe with a length of 0.74 micrometers and it is doped with Arsenic at a concentration of 971119598868022820864 cm^-3. The drain region is of the material Diamond with a length of 0.74 micrometers and it is doped with Arsenic at a concentration of 905155840229654790144 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.007)
(define Lgs 0.52)
(define Lgl 0.74)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.74)
(define Ld 0.74)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
96929326042180370432
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
982008277704235155456
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
971119598868022820864
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
905155840229654790144
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
348 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.46 micrometers and it is doped with Boron at a concentration of 781632273114593099776 cm^-3. The short gate region is of the material Diamond with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 782695296126279614464 cm^-3. The long gate region is of the material Silicon with a length of 0.17 micrometers and it is doped with Boron at a concentration of 194313765236909932544 cm^-3. The drain region is of the material SiGe with a length of 0.46 micrometers and it is doped with Arsenic at a concentration of 352476628053191163904 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.004)
(define Lgs 0.51)
(define Lgl 0.17)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.46)
(define Ld 0.46)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
781632273114593099776
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
782695296126279614464
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
194313765236909932544
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
352476628053191163904
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
349 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.4 micrometers and it is doped with Boron at a concentration of 100659300366328201216 cm^-3. The short gate region is of the material SiGe with a length of 0.27 micrometers and it is doped with Phosphorus at a concentration of 621798941037763231744 cm^-3. The long gate region is of the material GaN with a length of 0.05 micrometers and it is doped with Phosphorus at a concentration of 68022252828924968960 cm^-3. The drain region is of the material SiGe with a length of 0.4 micrometers and it is doped with Arsenic at a concentration of 725837756578890121216 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.01)
(define Lgs 0.27)
(define Lgl 0.05)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.4)
(define Ld 0.4)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
100659300366328201216
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
621798941037763231744
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
68022252828924968960
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
725837756578890121216
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
350 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.84 micrometers and it is doped with Phosphorus at a concentration of 55142191560920768512 cm^-3. The short gate region is of the material SiGe with a length of 0.81 micrometers and it is doped with Phosphorus at a concentration of 613840232684236308480 cm^-3. The long gate region is of the material SiGe with a length of 0.64 micrometers and it is doped with Arsenic at a concentration of 103382622708088471552 cm^-3. The drain region is of the material Silicon with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 800673729261836697600 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.004)
(define Lgs 0.81)
(define Lgl 0.64)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.84)
(define Ld 0.84)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
55142191560920768512
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
613840232684236308480
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
103382622708088471552
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
800673729261836697600
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
351 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 940417805438218797056 cm^-3. The short gate region is of the material GaN with a length of 0.44 micrometers and it is doped with Boron at a concentration of 896005235759176351744 cm^-3. The long gate region is of the material Germanium with a length of 0.67 micrometers and it is doped with Boron at a concentration of 199065758121256353792 cm^-3. The drain region is of the material Silicon with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 685265727204485890048 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.001)
(define Lgs 0.44)
(define Lgl 0.67)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.41)
(define Ld 0.41)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
940417805438218797056
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
896005235759176351744
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
199065758121256353792
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
685265727204485890048
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
352 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.22 micrometers and it is doped with Arsenic at a concentration of 546749720606276059136 cm^-3. The short gate region is of the material GaN with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 128637864734334353408 cm^-3. The long gate region is of the material Germanium with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 485941385836188794880 cm^-3. The drain region is of the material SiGe with a length of 0.22 micrometers and it is doped with Arsenic at a concentration of 501295594438613008384 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.01 micrometers.
| (define tox 0.004)
(define Lgs 0.3)
(define Lgl 0.71)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.22)
(define Ld 0.22)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
546749720606276059136
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
128637864734334353408
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
485941385836188794880
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
501295594438613008384
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
353 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.85 micrometers and it is doped with Arsenic at a concentration of 607648155519397265408 cm^-3. The short gate region is of the material Silicon with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 136373055354922287104 cm^-3. The long gate region is of the material Diamond with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 903733625189404377088 cm^-3. The drain region is of the material Diamond with a length of 0.85 micrometers and it is doped with Phosphorus at a concentration of 697062428199323172864 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.009)
(define Lgs 0.18)
(define Lgl 0.34)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.85)
(define Ld 0.85)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
607648155519397265408
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
136373055354922287104
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
903733625189404377088
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
697062428199323172864
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
354 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.12 micrometers and it is doped with Phosphorus at a concentration of 52671990773832613888 cm^-3. The short gate region is of the material Diamond with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 694457403407925903360 cm^-3. The long gate region is of the material Silicon with a length of 0.65 micrometers and it is doped with Arsenic at a concentration of 262863837381221023744 cm^-3. The drain region is of the material SiGe with a length of 0.12 micrometers and it is doped with Phosphorus at a concentration of 908334354534919307264 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.006)
(define Lgs 0.35)
(define Lgl 0.65)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.12)
(define Ld 0.12)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
52671990773832613888
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
694457403407925903360
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
262863837381221023744
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
908334354534919307264
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
355 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.6 micrometers and it is doped with Arsenic at a concentration of 172799136572659826688 cm^-3. The short gate region is of the material GaN with a length of 0.88 micrometers and it is doped with Boron at a concentration of 944620536889793576960 cm^-3. The long gate region is of the material GaN with a length of 0.31 micrometers and it is doped with Arsenic at a concentration of 404588793480188395520 cm^-3. The drain region is of the material SiGe with a length of 0.6 micrometers and it is doped with Boron at a concentration of 386214941009870585856 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.006)
(define Lgs 0.88)
(define Lgl 0.31)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.6)
(define Ld 0.6)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
172799136572659826688
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
944620536889793576960
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
404588793480188395520
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
386214941009870585856
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
356 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 135814568347061731328 cm^-3. The short gate region is of the material Germanium with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 153663455692101189632 cm^-3. The long gate region is of the material Germanium with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 131806254198976757760 cm^-3. The drain region is of the material SiGe with a length of 0.45 micrometers and it is doped with Boron at a concentration of 112366913262100414464 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.002)
(define Lgs 0.4)
(define Lgl 0.31)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.45)
(define Ld 0.45)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
135814568347061731328
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
153663455692101189632
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
131806254198976757760
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
112366913262100414464
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
357 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.09 micrometers and it is doped with Arsenic at a concentration of 561433808152522522624 cm^-3. The short gate region is of the material Silicon with a length of 0.92 micrometers and it is doped with Boron at a concentration of 524058053187425140736 cm^-3. The long gate region is of the material Germanium with a length of 0.75 micrometers and it is doped with Phosphorus at a concentration of 950428618102740090880 cm^-3. The drain region is of the material Germanium with a length of 0.09 micrometers and it is doped with Phosphorus at a concentration of 163568687689777053696 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.002)
(define Lgs 0.92)
(define Lgl 0.75)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.09)
(define Ld 0.09)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
561433808152522522624
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
524058053187425140736
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
950428618102740090880
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
163568687689777053696
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
358 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.9 micrometers and it is doped with Phosphorus at a concentration of 216494717874696814592 cm^-3. The short gate region is of the material Germanium with a length of 0.57 micrometers and it is doped with Boron at a concentration of 988801999194625015808 cm^-3. The long gate region is of the material SiGe with a length of 0.08 micrometers and it is doped with Arsenic at a concentration of 784031388182505455616 cm^-3. The drain region is of the material Germanium with a length of 0.9 micrometers and it is doped with Boron at a concentration of 866827925924226138112 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.008)
(define Lgs 0.57)
(define Lgl 0.08)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.9)
(define Ld 0.9)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
216494717874696814592
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
988801999194625015808
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
784031388182505455616
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
866827925924226138112
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
359 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.18 micrometers and it is doped with Arsenic at a concentration of 447505392917098266624 cm^-3. The short gate region is of the material GaN with a length of 0.68 micrometers and it is doped with Phosphorus at a concentration of 652787581145526173696 cm^-3. The long gate region is of the material SiGe with a length of 0.41 micrometers and it is doped with Boron at a concentration of 24940348816408723456 cm^-3. The drain region is of the material Diamond with a length of 0.18 micrometers and it is doped with Arsenic at a concentration of 758824329796296638464 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.007)
(define Lgs 0.68)
(define Lgl 0.41)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.18)
(define Ld 0.18)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
447505392917098266624
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
652787581145526173696
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
24940348816408723456
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
758824329796296638464
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
360 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 540377926788065787904 cm^-3. The short gate region is of the material Germanium with a length of 0.74 micrometers and it is doped with Phosphorus at a concentration of 83546010757807620096 cm^-3. The long gate region is of the material GaN with a length of 0.5 micrometers and it is doped with Boron at a concentration of 641496843471425241088 cm^-3. The drain region is of the material Diamond with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 420205018968539922432 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.005)
(define Lgs 0.74)
(define Lgl 0.5)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.15)
(define Ld 0.15)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
540377926788065787904
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
83546010757807620096
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
641496843471425241088
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
420205018968539922432
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
361 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.92 micrometers and it is doped with Boron at a concentration of 151057290839657906176 cm^-3. The short gate region is of the material GaN with a length of 0.98 micrometers and it is doped with Boron at a concentration of 609741566454319415296 cm^-3. The long gate region is of the material Germanium with a length of 0.04 micrometers and it is doped with Arsenic at a concentration of 645874966490727055360 cm^-3. The drain region is of the material SiGe with a length of 0.92 micrometers and it is doped with Boron at a concentration of 220963809895019511808 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.009)
(define Lgs 0.98)
(define Lgl 0.04)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.92)
(define Ld 0.92)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
151057290839657906176
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
609741566454319415296
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
645874966490727055360
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
220963809895019511808
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
362 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 705406330681970176 cm^-3. The short gate region is of the material GaN with a length of 0.67 micrometers and it is doped with Phosphorus at a concentration of 488847396595169492992 cm^-3. The long gate region is of the material Germanium with a length of 0.38 micrometers and it is doped with Boron at a concentration of 895515083530916462592 cm^-3. The drain region is of the material SiGe with a length of 0.62 micrometers and it is doped with Boron at a concentration of 590010773266770034688 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.01 micrometers.
| (define tox 0.005)
(define Lgs 0.67)
(define Lgl 0.38)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.62)
(define Ld 0.62)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
705406330681970176
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
488847396595169492992
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
895515083530916462592
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
590010773266770034688
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
363 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.4 micrometers and it is doped with Boron at a concentration of 589082213628770779136 cm^-3. The short gate region is of the material Silicon with a length of 0.21 micrometers and it is doped with Phosphorus at a concentration of 468662236673560543232 cm^-3. The long gate region is of the material SiGe with a length of 0.12 micrometers and it is doped with Phosphorus at a concentration of 678260535097984155648 cm^-3. The drain region is of the material Diamond with a length of 0.4 micrometers and it is doped with Boron at a concentration of 848047693656384864256 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.006)
(define Lgs 0.21)
(define Lgl 0.12)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.4)
(define Ld 0.4)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
589082213628770779136
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
468662236673560543232
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
678260535097984155648
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
848047693656384864256
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
364 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.1 micrometers and it is doped with Phosphorus at a concentration of 610627916545024065536 cm^-3. The short gate region is of the material Germanium with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 998112721923002073088 cm^-3. The long gate region is of the material Silicon with a length of 0.11 micrometers and it is doped with Boron at a concentration of 164803917523208830976 cm^-3. The drain region is of the material Silicon with a length of 0.1 micrometers and it is doped with Boron at a concentration of 231997447454737760256 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.009)
(define Lgs 0.3)
(define Lgl 0.11)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.1)
(define Ld 0.1)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
610627916545024065536
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
998112721923002073088
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
164803917523208830976
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
231997447454737760256
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
365 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.19 micrometers and it is doped with Boron at a concentration of 123056199603546324992 cm^-3. The short gate region is of the material Germanium with a length of 0.61 micrometers and it is doped with Arsenic at a concentration of 842457994433804369920 cm^-3. The long gate region is of the material GaN with a length of 0.36 micrometers and it is doped with Boron at a concentration of 40388165236653604864 cm^-3. The drain region is of the material Silicon with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 691735920272202399744 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.008)
(define Lgs 0.61)
(define Lgl 0.36)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.19)
(define Ld 0.19)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
123056199603546324992
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
842457994433804369920
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
40388165236653604864
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
691735920272202399744
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
366 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.06 micrometers and it is doped with Arsenic at a concentration of 334796641186182332416 cm^-3. The short gate region is of the material SiGe with a length of 0.68 micrometers and it is doped with Arsenic at a concentration of 829318520880791683072 cm^-3. The long gate region is of the material Germanium with a length of 0.87 micrometers and it is doped with Phosphorus at a concentration of 102773238818444148736 cm^-3. The drain region is of the material Germanium with a length of 0.06 micrometers and it is doped with Arsenic at a concentration of 924575408092253650944 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.007)
(define Lgs 0.68)
(define Lgl 0.87)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.06)
(define Ld 0.06)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
334796641186182332416
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
829318520880791683072
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
102773238818444148736
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
924575408092253650944
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
367 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.42 micrometers and it is doped with Boron at a concentration of 204273328210192564224 cm^-3. The short gate region is of the material Germanium with a length of 0.94 micrometers and it is doped with Boron at a concentration of 911786254051191291904 cm^-3. The long gate region is of the material Diamond with a length of 0.38 micrometers and it is doped with Boron at a concentration of 244245822581296660480 cm^-3. The drain region is of the material SiGe with a length of 0.42 micrometers and it is doped with Phosphorus at a concentration of 910118838596759584768 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.008)
(define Lgs 0.94)
(define Lgl 0.38)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.42)
(define Ld 0.42)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
204273328210192564224
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
911786254051191291904
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
244245822581296660480
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
910118838596759584768
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
368 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.6 micrometers and it is doped with Boron at a concentration of 923571029307648638976 cm^-3. The short gate region is of the material SiGe with a length of 0.14 micrometers and it is doped with Phosphorus at a concentration of 93707974698875486208 cm^-3. The long gate region is of the material Silicon with a length of 0.23 micrometers and it is doped with Phosphorus at a concentration of 716287681903265447936 cm^-3. The drain region is of the material SiGe with a length of 0.6 micrometers and it is doped with Arsenic at a concentration of 325047106897410392064 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.005)
(define Lgs 0.14)
(define Lgl 0.23)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.6)
(define Ld 0.6)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
923571029307648638976
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
93707974698875486208
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
716287681903265447936
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
325047106897410392064
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
369 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.15 micrometers and it is doped with Boron at a concentration of 534070585953473134592 cm^-3. The short gate region is of the material SiGe with a length of 0.26 micrometers and it is doped with Arsenic at a concentration of 657809751177336717312 cm^-3. The long gate region is of the material GaN with a length of 0.19 micrometers and it is doped with Boron at a concentration of 719205233844872544256 cm^-3. The drain region is of the material Silicon with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 474835762316555976704 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.005)
(define Lgs 0.26)
(define Lgl 0.19)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.15)
(define Ld 0.15)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
534070585953473134592
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
657809751177336717312
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
719205233844872544256
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
474835762316555976704
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
370 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.74 micrometers and it is doped with Arsenic at a concentration of 626925942175418810368 cm^-3. The short gate region is of the material Germanium with a length of 0.53 micrometers and it is doped with Arsenic at a concentration of 768403294676453949440 cm^-3. The long gate region is of the material Germanium with a length of 0.27 micrometers and it is doped with Arsenic at a concentration of 160028604396852314112 cm^-3. The drain region is of the material Silicon with a length of 0.74 micrometers and it is doped with Boron at a concentration of 326115215463694336000 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.01 micrometers.
| (define tox 0.003)
(define Lgs 0.53)
(define Lgl 0.27)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.74)
(define Ld 0.74)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
626925942175418810368
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
768403294676453949440
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
160028604396852314112
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
326115215463694336000
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
371 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.04 micrometers and it is doped with Boron at a concentration of 912106516960522141696 cm^-3. The short gate region is of the material Germanium with a length of 0.06 micrometers and it is doped with Phosphorus at a concentration of 665075767957466644480 cm^-3. The long gate region is of the material SiGe with a length of 0.36 micrometers and it is doped with Boron at a concentration of 227328762728225144832 cm^-3. The drain region is of the material Silicon with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 14551202962054744064 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.01)
(define Lgs 0.06)
(define Lgl 0.36)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.04)
(define Ld 0.04)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
912106516960522141696
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
665075767957466644480
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
227328762728225144832
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
14551202962054744064
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
372 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.56 micrometers and it is doped with Phosphorus at a concentration of 512391935634718588928 cm^-3. The short gate region is of the material SiGe with a length of 0.13 micrometers and it is doped with Arsenic at a concentration of 844996581342028234752 cm^-3. The long gate region is of the material GaN with a length of 0.87 micrometers and it is doped with Arsenic at a concentration of 200301818269628956672 cm^-3. The drain region is of the material SiGe with a length of 0.56 micrometers and it is doped with Arsenic at a concentration of 593954826862529085440 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.006)
(define Lgs 0.13)
(define Lgl 0.87)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.56)
(define Ld 0.56)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
512391935634718588928
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
844996581342028234752
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
200301818269628956672
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
593954826862529085440
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
373 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 744478605527945183232 cm^-3. The short gate region is of the material Silicon with a length of 0.03 micrometers and it is doped with Phosphorus at a concentration of 581366261319851180032 cm^-3. The long gate region is of the material Germanium with a length of 0.75 micrometers and it is doped with Phosphorus at a concentration of 549466761854297309184 cm^-3. The drain region is of the material SiGe with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 889848375477641936896 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.009)
(define Lgs 0.03)
(define Lgl 0.75)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.3)
(define Ld 0.3)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
744478605527945183232
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
581366261319851180032
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
549466761854297309184
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
889848375477641936896
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
374 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.24 micrometers and it is doped with Arsenic at a concentration of 701957432116748353536 cm^-3. The short gate region is of the material Diamond with a length of 0.85 micrometers and it is doped with Boron at a concentration of 79725478217827926016 cm^-3. The long gate region is of the material Germanium with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 397101104668994306048 cm^-3. The drain region is of the material GaN with a length of 0.24 micrometers and it is doped with Boron at a concentration of 317933038894584430592 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.008)
(define Lgs 0.85)
(define Lgl 0.45)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.24)
(define Ld 0.24)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
701957432116748353536
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
79725478217827926016
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
397101104668994306048
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
317933038894584430592
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
375 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.88 micrometers and it is doped with Arsenic at a concentration of 555737061194467770368 cm^-3. The short gate region is of the material Germanium with a length of 0.36 micrometers and it is doped with Boron at a concentration of 158768461883807694848 cm^-3. The long gate region is of the material Germanium with a length of 0.71 micrometers and it is doped with Arsenic at a concentration of 334358514466713632768 cm^-3. The drain region is of the material Silicon with a length of 0.88 micrometers and it is doped with Phosphorus at a concentration of 284445380963445899264 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.003)
(define Lgs 0.36)
(define Lgl 0.71)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.88)
(define Ld 0.88)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
555737061194467770368
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
158768461883807694848
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
334358514466713632768
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
284445380963445899264
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
376 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.62 micrometers and it is doped with Boron at a concentration of 166745246615753293824 cm^-3. The short gate region is of the material Germanium with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 25401210229050433536 cm^-3. The long gate region is of the material SiGe with a length of 0.63 micrometers and it is doped with Phosphorus at a concentration of 240902088838763741184 cm^-3. The drain region is of the material SiGe with a length of 0.62 micrometers and it is doped with Boron at a concentration of 116393200274432770048 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.007)
(define Lgs 0.51)
(define Lgl 0.63)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.62)
(define Ld 0.62)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
166745246615753293824
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
25401210229050433536
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
240902088838763741184
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
116393200274432770048
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
377 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.71 micrometers and it is doped with Arsenic at a concentration of 97366906535534592000 cm^-3. The short gate region is of the material Diamond with a length of 0.75 micrometers and it is doped with Phosphorus at a concentration of 223957517438983143424 cm^-3. The long gate region is of the material SiGe with a length of 0.99 micrometers and it is doped with Arsenic at a concentration of 822592987453705420800 cm^-3. The drain region is of the material Diamond with a length of 0.71 micrometers and it is doped with Boron at a concentration of 497350225061977128960 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.006)
(define Lgs 0.75)
(define Lgl 0.99)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.71)
(define Ld 0.71)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
97366906535534592000
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
223957517438983143424
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
822592987453705420800
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
497350225061977128960
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
378 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.44 micrometers and it is doped with Arsenic at a concentration of 89932800989126475776 cm^-3. The short gate region is of the material Germanium with a length of 0.6 micrometers and it is doped with Boron at a concentration of 910514901436020162560 cm^-3. The long gate region is of the material Germanium with a length of 0.48 micrometers and it is doped with Boron at a concentration of 303393689752727977984 cm^-3. The drain region is of the material SiGe with a length of 0.44 micrometers and it is doped with Boron at a concentration of 389336670138738671616 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.005)
(define Lgs 0.6)
(define Lgl 0.48)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.44)
(define Ld 0.44)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
89932800989126475776
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
910514901436020162560
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
303393689752727977984
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
389336670138738671616
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
379 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 900579952573827907584 cm^-3. The short gate region is of the material Germanium with a length of 0.08 micrometers and it is doped with Boron at a concentration of 520836243819921276928 cm^-3. The long gate region is of the material Diamond with a length of 0.29 micrometers and it is doped with Arsenic at a concentration of 663430390130608439296 cm^-3. The drain region is of the material GaN with a length of 0.04 micrometers and it is doped with Arsenic at a concentration of 602896227227298299904 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.002)
(define Lgs 0.08)
(define Lgl 0.29)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.04)
(define Ld 0.04)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
900579952573827907584
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
520836243819921276928
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
663430390130608439296
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
602896227227298299904
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
380 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.11 micrometers and it is doped with Phosphorus at a concentration of 720007201146956152832 cm^-3. The short gate region is of the material GaN with a length of 0.65 micrometers and it is doped with Arsenic at a concentration of 50349434190504894464 cm^-3. The long gate region is of the material GaN with a length of 0.86 micrometers and it is doped with Phosphorus at a concentration of 62166291722005225472 cm^-3. The drain region is of the material SiGe with a length of 0.11 micrometers and it is doped with Boron at a concentration of 103967461040632807424 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.004)
(define Lgs 0.65)
(define Lgl 0.86)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.11)
(define Ld 0.11)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
720007201146956152832
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
50349434190504894464
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
62166291722005225472
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
103967461040632807424
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
381 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.59 micrometers and it is doped with Arsenic at a concentration of 69130457549106470912 cm^-3. The short gate region is of the material Germanium with a length of 0.73 micrometers and it is doped with Boron at a concentration of 775362905471916048384 cm^-3. The long gate region is of the material GaN with a length of 0.78 micrometers and it is doped with Boron at a concentration of 575398836065697398784 cm^-3. The drain region is of the material Germanium with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 950631859074192113664 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.009)
(define Lgs 0.73)
(define Lgl 0.78)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.59)
(define Ld 0.59)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
69130457549106470912
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
775362905471916048384
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
575398836065697398784
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
950631859074192113664
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
382 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.89 micrometers and it is doped with Arsenic at a concentration of 871875515654880624640 cm^-3. The short gate region is of the material Silicon with a length of 0.94 micrometers and it is doped with Boron at a concentration of 836733009196978143232 cm^-3. The long gate region is of the material SiGe with a length of 0.96 micrometers and it is doped with Boron at a concentration of 939127502774194012160 cm^-3. The drain region is of the material SiGe with a length of 0.89 micrometers and it is doped with Boron at a concentration of 435541306494080516096 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.005)
(define Lgs 0.94)
(define Lgl 0.96)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.89)
(define Ld 0.89)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
871875515654880624640
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
836733009196978143232
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
939127502774194012160
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
435541306494080516096
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
383 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.57 micrometers and it is doped with Boron at a concentration of 789261885450627317760 cm^-3. The short gate region is of the material Germanium with a length of 0.85 micrometers and it is doped with Phosphorus at a concentration of 70944921995346788352 cm^-3. The long gate region is of the material SiGe with a length of 0.4 micrometers and it is doped with Boron at a concentration of 345210573789323591680 cm^-3. The drain region is of the material Diamond with a length of 0.57 micrometers and it is doped with Boron at a concentration of 206761504806296584192 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.002)
(define Lgs 0.85)
(define Lgl 0.4)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.57)
(define Ld 0.57)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
789261885450627317760
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
70944921995346788352
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
345210573789323591680
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
206761504806296584192
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
384 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.25 micrometers and it is doped with Boron at a concentration of 958981200805635686400 cm^-3. The short gate region is of the material Silicon with a length of 0.81 micrometers and it is doped with Boron at a concentration of 320220899705262047232 cm^-3. The long gate region is of the material Diamond with a length of 0.25 micrometers and it is doped with Boron at a concentration of 883544003091384107008 cm^-3. The drain region is of the material Germanium with a length of 0.25 micrometers and it is doped with Boron at a concentration of 917756396486045073408 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.009)
(define Lgs 0.81)
(define Lgl 0.25)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.25)
(define Ld 0.25)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
958981200805635686400
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
320220899705262047232
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
883544003091384107008
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
917756396486045073408
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
385 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.42 micrometers and it is doped with Phosphorus at a concentration of 295532115148198510592 cm^-3. The short gate region is of the material GaN with a length of 0.97 micrometers and it is doped with Phosphorus at a concentration of 402751556726359982080 cm^-3. The long gate region is of the material SiGe with a length of 0.89 micrometers and it is doped with Phosphorus at a concentration of 333732912103557562368 cm^-3. The drain region is of the material Silicon with a length of 0.42 micrometers and it is doped with Boron at a concentration of 805865322119373258752 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.009)
(define Lgs 0.97)
(define Lgl 0.89)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.42)
(define Ld 0.42)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
295532115148198510592
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
402751556726359982080
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
333732912103557562368
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
805865322119373258752
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
386 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.61 micrometers and it is doped with Phosphorus at a concentration of 857135932681401794560 cm^-3. The short gate region is of the material GaN with a length of 0.7 micrometers and it is doped with Boron at a concentration of 24987130920102617088 cm^-3. The long gate region is of the material Germanium with a length of 0.74 micrometers and it is doped with Phosphorus at a concentration of 704831631694560755712 cm^-3. The drain region is of the material GaN with a length of 0.61 micrometers and it is doped with Arsenic at a concentration of 718147575211648090112 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.008)
(define Lgs 0.7)
(define Lgl 0.74)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.61)
(define Ld 0.61)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
857135932681401794560
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
24987130920102617088
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
704831631694560755712
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
718147575211648090112
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
387 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.35 micrometers and it is doped with Boron at a concentration of 220061930547824754688 cm^-3. The short gate region is of the material Germanium with a length of 0.85 micrometers and it is doped with Arsenic at a concentration of 986539300938864001024 cm^-3. The long gate region is of the material GaN with a length of 0.33 micrometers and it is doped with Boron at a concentration of 908338011879529512960 cm^-3. The drain region is of the material Diamond with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 643121049219758686208 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.009)
(define Lgs 0.85)
(define Lgl 0.33)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.35)
(define Ld 0.35)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
220061930547824754688
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
986539300938864001024
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
908338011879529512960
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
643121049219758686208
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
388 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.39 micrometers and it is doped with Arsenic at a concentration of 414492136377234620416 cm^-3. The short gate region is of the material Silicon with a length of 0.32 micrometers and it is doped with Boron at a concentration of 991963840306156929024 cm^-3. The long gate region is of the material SiGe with a length of 0.35 micrometers and it is doped with Arsenic at a concentration of 359963479457004257280 cm^-3. The drain region is of the material Silicon with a length of 0.39 micrometers and it is doped with Phosphorus at a concentration of 890477273031619379200 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.004)
(define Lgs 0.32)
(define Lgl 0.35)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.39)
(define Ld 0.39)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
414492136377234620416
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
991963840306156929024
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
359963479457004257280
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
890477273031619379200
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
389 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.32 micrometers and it is doped with Boron at a concentration of 643913192954789756928 cm^-3. The short gate region is of the material Diamond with a length of 0.63 micrometers and it is doped with Boron at a concentration of 638491578338334343168 cm^-3. The long gate region is of the material Silicon with a length of 0.12 micrometers and it is doped with Arsenic at a concentration of 120858399647620808704 cm^-3. The drain region is of the material Silicon with a length of 0.32 micrometers and it is doped with Boron at a concentration of 761324787647746015232 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.006)
(define Lgs 0.63)
(define Lgl 0.12)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.32)
(define Ld 0.32)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
643913192954789756928
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
638491578338334343168
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
120858399647620808704
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
761324787647746015232
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
390 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.9 micrometers and it is doped with Phosphorus at a concentration of 54700565848347959296 cm^-3. The short gate region is of the material Germanium with a length of 0.05 micrometers and it is doped with Boron at a concentration of 345870629830975160320 cm^-3. The long gate region is of the material Diamond with a length of 0.17 micrometers and it is doped with Boron at a concentration of 715632798807093936128 cm^-3. The drain region is of the material GaN with a length of 0.9 micrometers and it is doped with Arsenic at a concentration of 691409802386933940224 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.007)
(define Lgs 0.05)
(define Lgl 0.17)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.9)
(define Ld 0.9)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
54700565848347959296
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
345870629830975160320
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
715632798807093936128
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
691409802386933940224
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
391 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.26 micrometers and it is doped with Boron at a concentration of 551755486948868882432 cm^-3. The short gate region is of the material Germanium with a length of 0.13 micrometers and it is doped with Phosphorus at a concentration of 693212186673843798016 cm^-3. The long gate region is of the material Diamond with a length of 0.91 micrometers and it is doped with Arsenic at a concentration of 316583069168863936512 cm^-3. The drain region is of the material SiGe with a length of 0.26 micrometers and it is doped with Boron at a concentration of 835286281712883859456 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.009)
(define Lgs 0.13)
(define Lgl 0.91)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.26)
(define Ld 0.26)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
551755486948868882432
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
693212186673843798016
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
316583069168863936512
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
835286281712883859456
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
392 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.78 micrometers and it is doped with Phosphorus at a concentration of 474475140107607736320 cm^-3. The short gate region is of the material Diamond with a length of 0.16 micrometers and it is doped with Phosphorus at a concentration of 297838011972661936128 cm^-3. The long gate region is of the material Germanium with a length of 0.44 micrometers and it is doped with Arsenic at a concentration of 229094971458639265792 cm^-3. The drain region is of the material Diamond with a length of 0.78 micrometers and it is doped with Arsenic at a concentration of 565769798881343438848 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.003)
(define Lgs 0.16)
(define Lgl 0.44)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.78)
(define Ld 0.78)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
474475140107607736320
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
297838011972661936128
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
229094971458639265792
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
565769798881343438848
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
393 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.7 micrometers and it is doped with Boron at a concentration of 938188724707625926656 cm^-3. The short gate region is of the material GaN with a length of 0.94 micrometers and it is doped with Boron at a concentration of 90907917511753678848 cm^-3. The long gate region is of the material GaN with a length of 0.44 micrometers and it is doped with Arsenic at a concentration of 17860130463699417088 cm^-3. The drain region is of the material GaN with a length of 0.7 micrometers and it is doped with Boron at a concentration of 788460392155407712256 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.009)
(define Lgs 0.94)
(define Lgl 0.44)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.7)
(define Ld 0.7)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
938188724707625926656
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
90907917511753678848
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
17860130463699417088
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
788460392155407712256
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
394 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.28 micrometers and it is doped with Phosphorus at a concentration of 943885210442972528640 cm^-3. The short gate region is of the material Germanium with a length of 0.43 micrometers and it is doped with Phosphorus at a concentration of 630450734911250235392 cm^-3. The long gate region is of the material Silicon with a length of 0.56 micrometers and it is doped with Arsenic at a concentration of 439403408171684593664 cm^-3. The drain region is of the material GaN with a length of 0.28 micrometers and it is doped with Phosphorus at a concentration of 813000838299460042752 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.005)
(define Lgs 0.43)
(define Lgl 0.56)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.28)
(define Ld 0.28)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
943885210442972528640
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
630450734911250235392
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
439403408171684593664
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
813000838299460042752
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
395 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.65 micrometers and it is doped with Phosphorus at a concentration of 23991540192096583680 cm^-3. The short gate region is of the material Diamond with a length of 0.69 micrometers and it is doped with Arsenic at a concentration of 92918926929814470656 cm^-3. The long gate region is of the material SiGe with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 582963270794111877120 cm^-3. The drain region is of the material GaN with a length of 0.65 micrometers and it is doped with Arsenic at a concentration of 168194308844550422528 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.005)
(define Lgs 0.69)
(define Lgl 0.55)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.65)
(define Ld 0.65)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
23991540192096583680
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
92918926929814470656
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
582963270794111877120
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
168194308844550422528
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
396 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.23 micrometers and it is doped with Phosphorus at a concentration of 585223886592868614144 cm^-3. The short gate region is of the material Silicon with a length of 0.6 micrometers and it is doped with Phosphorus at a concentration of 278086260252601319424 cm^-3. The long gate region is of the material Germanium with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 882268340764361097216 cm^-3. The drain region is of the material Silicon with a length of 0.23 micrometers and it is doped with Boron at a concentration of 300949951188075544576 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.008)
(define Lgs 0.6)
(define Lgl 0.55)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.23)
(define Ld 0.23)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
585223886592868614144
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
278086260252601319424
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
882268340764361097216
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
300949951188075544576
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
397 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.94 micrometers and it is doped with Phosphorus at a concentration of 227200283926519742464 cm^-3. The short gate region is of the material SiGe with a length of 0.68 micrometers and it is doped with Phosphorus at a concentration of 579140160056506843136 cm^-3. The long gate region is of the material Diamond with a length of 0.17 micrometers and it is doped with Boron at a concentration of 723127503689825124352 cm^-3. The drain region is of the material Diamond with a length of 0.94 micrometers and it is doped with Arsenic at a concentration of 28686511105421209600 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.005)
(define Lgs 0.68)
(define Lgl 0.17)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.94)
(define Ld 0.94)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
227200283926519742464
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
579140160056506843136
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
723127503689825124352
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
28686511105421209600
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
398 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 600150139813763612672 cm^-3. The short gate region is of the material GaN with a length of 0.26 micrometers and it is doped with Phosphorus at a concentration of 313418623597636747264 cm^-3. The long gate region is of the material GaN with a length of 0.91 micrometers and it is doped with Arsenic at a concentration of 134859325507957096448 cm^-3. The drain region is of the material GaN with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 682470943027962314752 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.006)
(define Lgs 0.26)
(define Lgl 0.91)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.93)
(define Ld 0.93)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
600150139813763612672
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
313418623597636747264
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
134859325507957096448
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
682470943027962314752
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
399 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.03 micrometers and it is doped with Boron at a concentration of 364263776752715300864 cm^-3. The short gate region is of the material Diamond with a length of 0.3 micrometers and it is doped with Boron at a concentration of 384598448185823985664 cm^-3. The long gate region is of the material GaN with a length of 0.67 micrometers and it is doped with Arsenic at a concentration of 309239081744534077440 cm^-3. The drain region is of the material Germanium with a length of 0.03 micrometers and it is doped with Boron at a concentration of 350575112574508466176 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.007)
(define Lgs 0.3)
(define Lgl 0.67)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.03)
(define Ld 0.03)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
364263776752715300864
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
384598448185823985664
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
309239081744534077440
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
350575112574508466176
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
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