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int64 0 2k | instruction stringlengths 945 985 | output stringlengths 5.12k 5.16k |
|---|---|---|
400 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.16 micrometers and it is doped with Phosphorus at a concentration of 455118522703978037248 cm^-3. The short gate region is of the material Diamond with a length of 0.06 micrometers and it is doped with Phosphorus at a concentration of 631652995945568403456 cm^-3. The long gate region is of the material Diamond with a length of 0.19 micrometers and it is doped with Boron at a concentration of 154226902720208076800 cm^-3. The drain region is of the material Diamond with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 282229099011989733376 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.004)
(define Lgs 0.06)
(define Lgl 0.19)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.16)
(define Ld 0.16)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
455118522703978037248
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
631652995945568403456
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
154226902720208076800
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
282229099011989733376
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
401 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.56 micrometers and it is doped with Boron at a concentration of 211145203551379128320 cm^-3. The short gate region is of the material Silicon with a length of 0.25 micrometers and it is doped with Phosphorus at a concentration of 914264203465900818432 cm^-3. The long gate region is of the material Diamond with a length of 0.33 micrometers and it is doped with Arsenic at a concentration of 804303766949951700992 cm^-3. The drain region is of the material GaN with a length of 0.56 micrometers and it is doped with Arsenic at a concentration of 768695732886375628800 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.002)
(define Lgs 0.25)
(define Lgl 0.33)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.56)
(define Ld 0.56)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
211145203551379128320
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
914264203465900818432
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
804303766949951700992
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
768695732886375628800
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
402 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.73 micrometers and it is doped with Boron at a concentration of 145858664144822321152 cm^-3. The short gate region is of the material SiGe with a length of 0.86 micrometers and it is doped with Boron at a concentration of 696139965986241380352 cm^-3. The long gate region is of the material Diamond with a length of 0.19 micrometers and it is doped with Boron at a concentration of 304753142244333846528 cm^-3. The drain region is of the material Germanium with a length of 0.73 micrometers and it is doped with Boron at a concentration of 910444030704255500288 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.006)
(define Lgs 0.86)
(define Lgl 0.19)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.73)
(define Ld 0.73)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
145858664144822321152
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
696139965986241380352
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
304753142244333846528
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
910444030704255500288
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
403 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.9 micrometers and it is doped with Arsenic at a concentration of 865926768434847678464 cm^-3. The short gate region is of the material Silicon with a length of 0.97 micrometers and it is doped with Arsenic at a concentration of 300727838642608406528 cm^-3. The long gate region is of the material Diamond with a length of 0.6 micrometers and it is doped with Arsenic at a concentration of 280042614105804046336 cm^-3. The drain region is of the material Silicon with a length of 0.9 micrometers and it is doped with Arsenic at a concentration of 979214418147810082816 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.002)
(define Lgs 0.97)
(define Lgl 0.6)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.9)
(define Ld 0.9)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
865926768434847678464
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
300727838642608406528
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
280042614105804046336
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
979214418147810082816
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
404 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 300468772090995802112 cm^-3. The short gate region is of the material Germanium with a length of 0.74 micrometers and it is doped with Boron at a concentration of 74332355295906676736 cm^-3. The long gate region is of the material SiGe with a length of 0.83 micrometers and it is doped with Arsenic at a concentration of 772967272521811492864 cm^-3. The drain region is of the material Diamond with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 152949248444834217984 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.009)
(define Lgs 0.74)
(define Lgl 0.83)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.34)
(define Ld 0.34)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
300468772090995802112
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
74332355295906676736
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
772967272521811492864
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
152949248444834217984
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
405 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.42 micrometers and it is doped with Phosphorus at a concentration of 235154303644835282944 cm^-3. The short gate region is of the material Germanium with a length of 0.27 micrometers and it is doped with Phosphorus at a concentration of 11557566256517013504 cm^-3. The long gate region is of the material Germanium with a length of 0.48 micrometers and it is doped with Boron at a concentration of 955835862569046638592 cm^-3. The drain region is of the material SiGe with a length of 0.42 micrometers and it is doped with Arsenic at a concentration of 85849724120234016768 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.003)
(define Lgs 0.27)
(define Lgl 0.48)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.42)
(define Ld 0.42)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
235154303644835282944
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
11557566256517013504
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
955835862569046638592
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
85849724120234016768
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
406 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.74 micrometers and it is doped with Phosphorus at a concentration of 737080489111823712256 cm^-3. The short gate region is of the material GaN with a length of 0.8 micrometers and it is doped with Phosphorus at a concentration of 247753554251867422720 cm^-3. The long gate region is of the material Silicon with a length of 0.56 micrometers and it is doped with Phosphorus at a concentration of 507782406495049089024 cm^-3. The drain region is of the material SiGe with a length of 0.74 micrometers and it is doped with Arsenic at a concentration of 307060705898765484032 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.006)
(define Lgs 0.8)
(define Lgl 0.56)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.74)
(define Ld 0.74)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
737080489111823712256
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
247753554251867422720
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
507782406495049089024
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
307060705898765484032
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
407 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.85 micrometers and it is doped with Phosphorus at a concentration of 841712334464809697280 cm^-3. The short gate region is of the material Silicon with a length of 0.66 micrometers and it is doped with Phosphorus at a concentration of 322363886705061003264 cm^-3. The long gate region is of the material GaN with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 977976031636379009024 cm^-3. The drain region is of the material Germanium with a length of 0.85 micrometers and it is doped with Boron at a concentration of 626006575799416782848 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.007)
(define Lgs 0.66)
(define Lgl 0.43)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.85)
(define Ld 0.85)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
841712334464809697280
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
322363886705061003264
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
977976031636379009024
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
626006575799416782848
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
408 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.32 micrometers and it is doped with Phosphorus at a concentration of 255380146260326973440 cm^-3. The short gate region is of the material SiGe with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 297911098395175813120 cm^-3. The long gate region is of the material Germanium with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 28290570223885271040 cm^-3. The drain region is of the material Diamond with a length of 0.32 micrometers and it is doped with Arsenic at a concentration of 72347689109086609408 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.007)
(define Lgs 0.59)
(define Lgl 0.81)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.32)
(define Ld 0.32)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
255380146260326973440
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
297911098395175813120
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
28290570223885271040
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
72347689109086609408
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
409 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 642521458508387581952 cm^-3. The short gate region is of the material Germanium with a length of 0.7 micrometers and it is doped with Phosphorus at a concentration of 594710468665134022656 cm^-3. The long gate region is of the material Germanium with a length of 0.55 micrometers and it is doped with Boron at a concentration of 86200823712680837120 cm^-3. The drain region is of the material GaN with a length of 0.96 micrometers and it is doped with Boron at a concentration of 765782843726731280384 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.007)
(define Lgs 0.7)
(define Lgl 0.55)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.96)
(define Ld 0.96)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
642521458508387581952
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
594710468665134022656
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
86200823712680837120
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
765782843726731280384
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
410 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.7 micrometers and it is doped with Phosphorus at a concentration of 209798652032361693184 cm^-3. The short gate region is of the material GaN with a length of 0.39 micrometers and it is doped with Arsenic at a concentration of 518229190316658393088 cm^-3. The long gate region is of the material Diamond with a length of 0.77 micrometers and it is doped with Boron at a concentration of 419028195622408945664 cm^-3. The drain region is of the material GaN with a length of 0.7 micrometers and it is doped with Phosphorus at a concentration of 720057433032146812928 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.01 micrometers.
| (define tox 0.003)
(define Lgs 0.39)
(define Lgl 0.77)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.7)
(define Ld 0.7)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
209798652032361693184
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
518229190316658393088
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
419028195622408945664
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
720057433032146812928
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
411 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.4 micrometers and it is doped with Boron at a concentration of 258199786709401796608 cm^-3. The short gate region is of the material Diamond with a length of 0.86 micrometers and it is doped with Phosphorus at a concentration of 463526724707615506432 cm^-3. The long gate region is of the material GaN with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 585646725835246796800 cm^-3. The drain region is of the material Diamond with a length of 0.4 micrometers and it is doped with Arsenic at a concentration of 532179843831696195584 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.008)
(define Lgs 0.86)
(define Lgl 0.04)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.4)
(define Ld 0.4)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
258199786709401796608
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
463526724707615506432
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
585646725835246796800
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
532179843831696195584
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
412 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.86 micrometers and it is doped with Boron at a concentration of 373123457418202054656 cm^-3. The short gate region is of the material Diamond with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 68249091666110226432 cm^-3. The long gate region is of the material GaN with a length of 0.67 micrometers and it is doped with Phosphorus at a concentration of 480628694128909615104 cm^-3. The drain region is of the material Germanium with a length of 0.86 micrometers and it is doped with Arsenic at a concentration of 354481311375355150336 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.009)
(define Lgs 0.04)
(define Lgl 0.67)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.86)
(define Ld 0.86)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
373123457418202054656
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
68249091666110226432
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
480628694128909615104
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
354481311375355150336
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
413 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 510669808530639814656 cm^-3. The short gate region is of the material Diamond with a length of 0.75 micrometers and it is doped with Boron at a concentration of 510715819210484219904 cm^-3. The long gate region is of the material Silicon with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 187132401702210174976 cm^-3. The drain region is of the material Silicon with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 596959015977692037120 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.002)
(define Lgs 0.75)
(define Lgl 0.84)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.19)
(define Ld 0.19)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
510669808530639814656
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
510715819210484219904
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
187132401702210174976
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
596959015977692037120
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
414 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.11 micrometers and it is doped with Arsenic at a concentration of 246685574062823800832 cm^-3. The short gate region is of the material Diamond with a length of 0.05 micrometers and it is doped with Phosphorus at a concentration of 657397611870044553216 cm^-3. The long gate region is of the material GaN with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 72439204625672167424 cm^-3. The drain region is of the material SiGe with a length of 0.11 micrometers and it is doped with Boron at a concentration of 862376673425169973248 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.005)
(define Lgs 0.05)
(define Lgl 0.19)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.11)
(define Ld 0.11)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
246685574062823800832
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
657397611870044553216
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
72439204625672167424
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
862376673425169973248
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
415 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.8 micrometers and it is doped with Phosphorus at a concentration of 600800167358539497472 cm^-3. The short gate region is of the material Germanium with a length of 0.52 micrometers and it is doped with Arsenic at a concentration of 270457264941072875520 cm^-3. The long gate region is of the material Diamond with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 203278263586119090176 cm^-3. The drain region is of the material Germanium with a length of 0.8 micrometers and it is doped with Boron at a concentration of 471114198836008321024 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.01 micrometers.
| (define tox 0.009)
(define Lgs 0.52)
(define Lgl 0.15)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.8)
(define Ld 0.8)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
600800167358539497472
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
270457264941072875520
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
203278263586119090176
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
471114198836008321024
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
416 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.04 micrometers and it is doped with Boron at a concentration of 696352911188273922048 cm^-3. The short gate region is of the material SiGe with a length of 0.41 micrometers and it is doped with Boron at a concentration of 101412240716636848128 cm^-3. The long gate region is of the material Diamond with a length of 0.9 micrometers and it is doped with Boron at a concentration of 125786039020676874240 cm^-3. The drain region is of the material Diamond with a length of 0.04 micrometers and it is doped with Boron at a concentration of 42893615942887882752 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.004)
(define Lgs 0.41)
(define Lgl 0.9)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.04)
(define Ld 0.04)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
696352911188273922048
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
101412240716636848128
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
125786039020676874240
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
42893615942887882752
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
417 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 441285977807138062336 cm^-3. The short gate region is of the material Diamond with a length of 0.8 micrometers and it is doped with Boron at a concentration of 334033124886177251328 cm^-3. The long gate region is of the material SiGe with a length of 0.16 micrometers and it is doped with Phosphorus at a concentration of 386862100229280497664 cm^-3. The drain region is of the material Germanium with a length of 0.19 micrometers and it is doped with Phosphorus at a concentration of 603235715639332306944 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.006)
(define Lgs 0.8)
(define Lgl 0.16)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.19)
(define Ld 0.19)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
441285977807138062336
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
334033124886177251328
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
386862100229280497664
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
603235715639332306944
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
418 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.99 micrometers and it is doped with Arsenic at a concentration of 323364396684232622080 cm^-3. The short gate region is of the material SiGe with a length of 0.32 micrometers and it is doped with Phosphorus at a concentration of 594520743262716297216 cm^-3. The long gate region is of the material GaN with a length of 0.41 micrometers and it is doped with Arsenic at a concentration of 530278982641382064128 cm^-3. The drain region is of the material Silicon with a length of 0.99 micrometers and it is doped with Boron at a concentration of 290476950733396017152 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.006)
(define Lgs 0.32)
(define Lgl 0.41)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.99)
(define Ld 0.99)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
323364396684232622080
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
594520743262716297216
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
530278982641382064128
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
290476950733396017152
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
419 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 624523506276747968512 cm^-3. The short gate region is of the material Silicon with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 494428825669336563712 cm^-3. The long gate region is of the material SiGe with a length of 0.49 micrometers and it is doped with Arsenic at a concentration of 274013100333083099136 cm^-3. The drain region is of the material SiGe with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 5620612040685284352 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.006)
(define Lgs 0.16)
(define Lgl 0.49)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.04)
(define Ld 0.04)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
624523506276747968512
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
494428825669336563712
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
274013100333083099136
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
5620612040685284352
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
420 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.74 micrometers and it is doped with Phosphorus at a concentration of 447278902320678043648 cm^-3. The short gate region is of the material Silicon with a length of 0.32 micrometers and it is doped with Phosphorus at a concentration of 818483888403609681920 cm^-3. The long gate region is of the material Germanium with a length of 0.56 micrometers and it is doped with Arsenic at a concentration of 421491874789274157056 cm^-3. The drain region is of the material Silicon with a length of 0.74 micrometers and it is doped with Arsenic at a concentration of 349092862703496462336 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.006)
(define Lgs 0.32)
(define Lgl 0.56)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.74)
(define Ld 0.74)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
447278902320678043648
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
818483888403609681920
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
421491874789274157056
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
349092862703496462336
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
421 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 540066822430267408384 cm^-3. The short gate region is of the material GaN with a length of 0.49 micrometers and it is doped with Phosphorus at a concentration of 103326605955662577664 cm^-3. The long gate region is of the material GaN with a length of 0.43 micrometers and it is doped with Boron at a concentration of 443356338911458361344 cm^-3. The drain region is of the material Diamond with a length of 0.76 micrometers and it is doped with Boron at a concentration of 454877856507324792832 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.009)
(define Lgs 0.49)
(define Lgl 0.43)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.76)
(define Ld 0.76)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
540066822430267408384
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
103326605955662577664
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
443356338911458361344
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
454877856507324792832
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
422 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.49 micrometers and it is doped with Arsenic at a concentration of 223714328071282982912 cm^-3. The short gate region is of the material Silicon with a length of 0.68 micrometers and it is doped with Boron at a concentration of 980700466284633784320 cm^-3. The long gate region is of the material GaN with a length of 0.78 micrometers and it is doped with Phosphorus at a concentration of 525853790396591767552 cm^-3. The drain region is of the material Diamond with a length of 0.49 micrometers and it is doped with Arsenic at a concentration of 578420189634378989568 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.002)
(define Lgs 0.68)
(define Lgl 0.78)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.49)
(define Ld 0.49)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
223714328071282982912
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
980700466284633784320
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
525853790396591767552
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
578420189634378989568
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
423 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.61 micrometers and it is doped with Arsenic at a concentration of 325576396233568026624 cm^-3. The short gate region is of the material Diamond with a length of 0.11 micrometers and it is doped with Boron at a concentration of 18111775983077969920 cm^-3. The long gate region is of the material Silicon with a length of 0.57 micrometers and it is doped with Boron at a concentration of 419393650037369733120 cm^-3. The drain region is of the material GaN with a length of 0.61 micrometers and it is doped with Phosphorus at a concentration of 725137412406629236736 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.003)
(define Lgs 0.11)
(define Lgl 0.57)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.61)
(define Ld 0.61)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
325576396233568026624
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
18111775983077969920
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
419393650037369733120
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
725137412406629236736
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
424 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.79 micrometers and it is doped with Arsenic at a concentration of 875339771620395188224 cm^-3. The short gate region is of the material Germanium with a length of 0.04 micrometers and it is doped with Arsenic at a concentration of 524861601784739921920 cm^-3. The long gate region is of the material Diamond with a length of 0.91 micrometers and it is doped with Phosphorus at a concentration of 369130230414525857792 cm^-3. The drain region is of the material SiGe with a length of 0.79 micrometers and it is doped with Arsenic at a concentration of 664482322780436299776 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.001)
(define Lgs 0.04)
(define Lgl 0.91)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.79)
(define Ld 0.79)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
875339771620395188224
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
524861601784739921920
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
369130230414525857792
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
664482322780436299776
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
425 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.15 micrometers and it is doped with Boron at a concentration of 664305215901958144000 cm^-3. The short gate region is of the material Silicon with a length of 0.84 micrometers and it is doped with Phosphorus at a concentration of 893405649944770248704 cm^-3. The long gate region is of the material SiGe with a length of 0.39 micrometers and it is doped with Boron at a concentration of 183490862374355009536 cm^-3. The drain region is of the material Silicon with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 140028619225674334208 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.007)
(define Lgs 0.84)
(define Lgl 0.39)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.15)
(define Ld 0.15)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
664305215901958144000
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
893405649944770248704
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
183490862374355009536
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
140028619225674334208
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
426 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.64 micrometers and it is doped with Arsenic at a concentration of 290841442367984631808 cm^-3. The short gate region is of the material Diamond with a length of 0.76 micrometers and it is doped with Arsenic at a concentration of 665209906927444033536 cm^-3. The long gate region is of the material Germanium with a length of 0.52 micrometers and it is doped with Boron at a concentration of 341352580496907567104 cm^-3. The drain region is of the material Germanium with a length of 0.64 micrometers and it is doped with Boron at a concentration of 339716802403134210048 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.005)
(define Lgs 0.76)
(define Lgl 0.52)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.64)
(define Ld 0.64)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
290841442367984631808
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
665209906927444033536
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
341352580496907567104
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
339716802403134210048
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
427 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.87 micrometers and it is doped with Phosphorus at a concentration of 836017522421877702656 cm^-3. The short gate region is of the material Germanium with a length of 0.83 micrometers and it is doped with Boron at a concentration of 788300038607331917824 cm^-3. The long gate region is of the material SiGe with a length of 0.58 micrometers and it is doped with Arsenic at a concentration of 61504986217068011520 cm^-3. The drain region is of the material GaN with a length of 0.87 micrometers and it is doped with Phosphorus at a concentration of 228447555795486244864 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.004)
(define Lgs 0.83)
(define Lgl 0.58)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.87)
(define Ld 0.87)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
836017522421877702656
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
788300038607331917824
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
61504986217068011520
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
228447555795486244864
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
428 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.66 micrometers and it is doped with Phosphorus at a concentration of 829704192575339233280 cm^-3. The short gate region is of the material Germanium with a length of 0.87 micrometers and it is doped with Phosphorus at a concentration of 114146950544276701184 cm^-3. The long gate region is of the material GaN with a length of 0.9 micrometers and it is doped with Phosphorus at a concentration of 303382581320079507456 cm^-3. The drain region is of the material Silicon with a length of 0.66 micrometers and it is doped with Arsenic at a concentration of 190514661567945310208 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.002)
(define Lgs 0.87)
(define Lgl 0.9)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.66)
(define Ld 0.66)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
829704192575339233280
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
114146950544276701184
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
303382581320079507456
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
190514661567945310208
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
429 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.45 micrometers and it is doped with Boron at a concentration of 496863501994450223104 cm^-3. The short gate region is of the material GaN with a length of 0.13 micrometers and it is doped with Phosphorus at a concentration of 503055064363909251072 cm^-3. The long gate region is of the material SiGe with a length of 0.13 micrometers and it is doped with Arsenic at a concentration of 220605275306362503168 cm^-3. The drain region is of the material Diamond with a length of 0.45 micrometers and it is doped with Phosphorus at a concentration of 983863826724581146624 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.004)
(define Lgs 0.13)
(define Lgl 0.13)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.45)
(define Ld 0.45)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
496863501994450223104
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
503055064363909251072
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
220605275306362503168
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
983863826724581146624
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
430 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 21268435194932350976 cm^-3. The short gate region is of the material Diamond with a length of 0.86 micrometers and it is doped with Arsenic at a concentration of 41673540733602807808 cm^-3. The long gate region is of the material Diamond with a length of 0.16 micrometers and it is doped with Boron at a concentration of 536209358845417619456 cm^-3. The drain region is of the material SiGe with a length of 0.34 micrometers and it is doped with Boron at a concentration of 735368427600297590784 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.01)
(define Lgs 0.86)
(define Lgl 0.16)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.34)
(define Ld 0.34)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
21268435194932350976
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
41673540733602807808
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
536209358845417619456
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
735368427600297590784
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
431 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.17 micrometers and it is doped with Phosphorus at a concentration of 403372694096809426944 cm^-3. The short gate region is of the material Germanium with a length of 0.68 micrometers and it is doped with Arsenic at a concentration of 924755616245013282816 cm^-3. The long gate region is of the material Silicon with a length of 0.16 micrometers and it is doped with Phosphorus at a concentration of 62346049172317093888 cm^-3. The drain region is of the material Diamond with a length of 0.17 micrometers and it is doped with Arsenic at a concentration of 650428235711838027776 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.004)
(define Lgs 0.68)
(define Lgl 0.16)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.17)
(define Ld 0.17)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
403372694096809426944
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
924755616245013282816
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
62346049172317093888
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
650428235711838027776
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
432 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.87 micrometers and it is doped with Arsenic at a concentration of 723550664792640454656 cm^-3. The short gate region is of the material Diamond with a length of 0.37 micrometers and it is doped with Boron at a concentration of 301263299834436911104 cm^-3. The long gate region is of the material Germanium with a length of 0.4 micrometers and it is doped with Boron at a concentration of 273984405433434144768 cm^-3. The drain region is of the material Germanium with a length of 0.87 micrometers and it is doped with Boron at a concentration of 646849069283390652416 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.007)
(define Lgs 0.37)
(define Lgl 0.4)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.87)
(define Ld 0.87)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
723550664792640454656
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
301263299834436911104
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
273984405433434144768
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
646849069283390652416
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
433 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.77 micrometers and it is doped with Boron at a concentration of 422448605755061960704 cm^-3. The short gate region is of the material Germanium with a length of 0.53 micrometers and it is doped with Boron at a concentration of 978824242591664963584 cm^-3. The long gate region is of the material GaN with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 747438125201949196288 cm^-3. The drain region is of the material SiGe with a length of 0.77 micrometers and it is doped with Boron at a concentration of 510752712324004577280 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.002)
(define Lgs 0.53)
(define Lgl 0.41)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.77)
(define Ld 0.77)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
422448605755061960704
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
978824242591664963584
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
747438125201949196288
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
510752712324004577280
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
434 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.12 micrometers and it is doped with Arsenic at a concentration of 677857819706836910080 cm^-3. The short gate region is of the material Diamond with a length of 0.6 micrometers and it is doped with Phosphorus at a concentration of 605146293560258068480 cm^-3. The long gate region is of the material SiGe with a length of 0.83 micrometers and it is doped with Phosphorus at a concentration of 448340354714804944896 cm^-3. The drain region is of the material GaN with a length of 0.12 micrometers and it is doped with Arsenic at a concentration of 831443393239432429568 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.005)
(define Lgs 0.6)
(define Lgl 0.83)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.12)
(define Ld 0.12)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
677857819706836910080
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
605146293560258068480
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
448340354714804944896
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
831443393239432429568
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
435 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.71 micrometers and it is doped with Boron at a concentration of 663097770959418949632 cm^-3. The short gate region is of the material Silicon with a length of 0.68 micrometers and it is doped with Phosphorus at a concentration of 672396075477945024512 cm^-3. The long gate region is of the material GaN with a length of 0.39 micrometers and it is doped with Phosphorus at a concentration of 445915315694683815936 cm^-3. The drain region is of the material Germanium with a length of 0.71 micrometers and it is doped with Boron at a concentration of 896374418366214569984 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.007)
(define Lgs 0.68)
(define Lgl 0.39)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.71)
(define Ld 0.71)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
663097770959418949632
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
672396075477945024512
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
445915315694683815936
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
896374418366214569984
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
436 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.07 micrometers and it is doped with Arsenic at a concentration of 133284622606686060544 cm^-3. The short gate region is of the material GaN with a length of 0.92 micrometers and it is doped with Phosphorus at a concentration of 219167490417140957184 cm^-3. The long gate region is of the material GaN with a length of 0.55 micrometers and it is doped with Boron at a concentration of 594342539502832582656 cm^-3. The drain region is of the material Diamond with a length of 0.07 micrometers and it is doped with Arsenic at a concentration of 402519207517838639104 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.005)
(define Lgs 0.92)
(define Lgl 0.55)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.07)
(define Ld 0.07)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
133284622606686060544
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
219167490417140957184
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
594342539502832582656
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
402519207517838639104
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
437 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.89 micrometers and it is doped with Boron at a concentration of 179583375590817890304 cm^-3. The short gate region is of the material SiGe with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 544789359990402187264 cm^-3. The long gate region is of the material SiGe with a length of 0.9 micrometers and it is doped with Phosphorus at a concentration of 66337804323445800960 cm^-3. The drain region is of the material Silicon with a length of 0.89 micrometers and it is doped with Arsenic at a concentration of 882058829980911534080 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.005)
(define Lgs 0.76)
(define Lgl 0.9)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.89)
(define Ld 0.89)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
179583375590817890304
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
544789359990402187264
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
66337804323445800960
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
882058829980911534080
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
438 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.25 micrometers and it is doped with Phosphorus at a concentration of 58998720460133056512 cm^-3. The short gate region is of the material Diamond with a length of 0.03 micrometers and it is doped with Phosphorus at a concentration of 767220813301605859328 cm^-3. The long gate region is of the material SiGe with a length of 0.29 micrometers and it is doped with Boron at a concentration of 879065316274827296768 cm^-3. The drain region is of the material Germanium with a length of 0.25 micrometers and it is doped with Boron at a concentration of 63003894824296464384 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.008)
(define Lgs 0.03)
(define Lgl 0.29)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.25)
(define Ld 0.25)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
58998720460133056512
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
767220813301605859328
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
879065316274827296768
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
63003894824296464384
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
439 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.63 micrometers and it is doped with Boron at a concentration of 971129391832050040832 cm^-3. The short gate region is of the material SiGe with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 822470167061393833984 cm^-3. The long gate region is of the material SiGe with a length of 0.07 micrometers and it is doped with Boron at a concentration of 546509294497799471104 cm^-3. The drain region is of the material Diamond with a length of 0.63 micrometers and it is doped with Phosphorus at a concentration of 737981003887982936064 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.002)
(define Lgs 0.08)
(define Lgl 0.07)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.63)
(define Ld 0.63)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
971129391832050040832
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
822470167061393833984
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
546509294497799471104
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
737981003887982936064
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
440 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.76 micrometers and it is doped with Arsenic at a concentration of 193644248274621464576 cm^-3. The short gate region is of the material GaN with a length of 0.85 micrometers and it is doped with Arsenic at a concentration of 669025062244329848832 cm^-3. The long gate region is of the material SiGe with a length of 0.6 micrometers and it is doped with Boron at a concentration of 412507860191218106368 cm^-3. The drain region is of the material SiGe with a length of 0.76 micrometers and it is doped with Boron at a concentration of 26248152580792733696 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.006)
(define Lgs 0.85)
(define Lgl 0.6)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.76)
(define Ld 0.76)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
193644248274621464576
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
669025062244329848832
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
412507860191218106368
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
26248152580792733696
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
441 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.83 micrometers and it is doped with Boron at a concentration of 166186824019270402048 cm^-3. The short gate region is of the material GaN with a length of 0.27 micrometers and it is doped with Boron at a concentration of 224477596972995280896 cm^-3. The long gate region is of the material Silicon with a length of 0.66 micrometers and it is doped with Phosphorus at a concentration of 491790584599854841856 cm^-3. The drain region is of the material Silicon with a length of 0.83 micrometers and it is doped with Arsenic at a concentration of 31430128358034284544 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.009)
(define Lgs 0.27)
(define Lgl 0.66)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.83)
(define Ld 0.83)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
166186824019270402048
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
224477596972995280896
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
491790584599854841856
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
31430128358034284544
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
442 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 691771973950818877440 cm^-3. The short gate region is of the material Silicon with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 60541437716634894336 cm^-3. The long gate region is of the material SiGe with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 12047048956541634560 cm^-3. The drain region is of the material SiGe with a length of 0.34 micrometers and it is doped with Boron at a concentration of 21203554738195742720 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.001)
(define Lgs 0.18)
(define Lgl 0.15)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.34)
(define Ld 0.34)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
691771973950818877440
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
60541437716634894336
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
12047048956541634560
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
21203554738195742720
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
443 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.26 micrometers and it is doped with Phosphorus at a concentration of 31850559928987267072 cm^-3. The short gate region is of the material Diamond with a length of 0.76 micrometers and it is doped with Arsenic at a concentration of 643092342374457409536 cm^-3. The long gate region is of the material SiGe with a length of 0.66 micrometers and it is doped with Arsenic at a concentration of 908699284884654522368 cm^-3. The drain region is of the material Silicon with a length of 0.26 micrometers and it is doped with Arsenic at a concentration of 376204785570671362048 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.004)
(define Lgs 0.76)
(define Lgl 0.66)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.26)
(define Ld 0.26)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
31850559928987267072
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
643092342374457409536
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
908699284884654522368
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
376204785570671362048
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
444 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.56 micrometers and it is doped with Boron at a concentration of 856624821970443042816 cm^-3. The short gate region is of the material Germanium with a length of 0.74 micrometers and it is doped with Arsenic at a concentration of 678098991411256492032 cm^-3. The long gate region is of the material Diamond with a length of 0.13 micrometers and it is doped with Boron at a concentration of 843865587769130090496 cm^-3. The drain region is of the material GaN with a length of 0.56 micrometers and it is doped with Arsenic at a concentration of 551604108046718861312 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.004)
(define Lgs 0.74)
(define Lgl 0.13)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.56)
(define Ld 0.56)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
856624821970443042816
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
678098991411256492032
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
843865587769130090496
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
551604108046718861312
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
445 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 265505063596389662720 cm^-3. The short gate region is of the material SiGe with a length of 0.82 micrometers and it is doped with Boron at a concentration of 695610673809033265152 cm^-3. The long gate region is of the material Germanium with a length of 0.12 micrometers and it is doped with Boron at a concentration of 336924025807934455808 cm^-3. The drain region is of the material GaN with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 287884937704577630208 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.004)
(define Lgs 0.82)
(define Lgl 0.12)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.18)
(define Ld 0.18)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
265505063596389662720
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
695610673809033265152
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
336924025807934455808
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
287884937704577630208
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
446 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.14 micrometers and it is doped with Phosphorus at a concentration of 916288109398851977216 cm^-3. The short gate region is of the material GaN with a length of 0.21 micrometers and it is doped with Phosphorus at a concentration of 571912470448169287680 cm^-3. The long gate region is of the material Silicon with a length of 0.48 micrometers and it is doped with Phosphorus at a concentration of 319133491378582978560 cm^-3. The drain region is of the material Diamond with a length of 0.14 micrometers and it is doped with Phosphorus at a concentration of 309264209656041439232 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.003)
(define Lgs 0.21)
(define Lgl 0.48)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.14)
(define Ld 0.14)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
916288109398851977216
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
571912470448169287680
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
319133491378582978560
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
309264209656041439232
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
447 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.79 micrometers and it is doped with Boron at a concentration of 91511059287042916352 cm^-3. The short gate region is of the material Diamond with a length of 0.79 micrometers and it is doped with Phosphorus at a concentration of 206344708011835031552 cm^-3. The long gate region is of the material Diamond with a length of 0.53 micrometers and it is doped with Boron at a concentration of 466273417706041507840 cm^-3. The drain region is of the material Diamond with a length of 0.79 micrometers and it is doped with Phosphorus at a concentration of 299110691286725296128 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.01)
(define Lgs 0.79)
(define Lgl 0.53)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.79)
(define Ld 0.79)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
91511059287042916352
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
206344708011835031552
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
466273417706041507840
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
299110691286725296128
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
448 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.86 micrometers and it is doped with Phosphorus at a concentration of 70026781103448473600 cm^-3. The short gate region is of the material Germanium with a length of 0.38 micrometers and it is doped with Phosphorus at a concentration of 842201330648392138752 cm^-3. The long gate region is of the material Diamond with a length of 0.93 micrometers and it is doped with Boron at a concentration of 129752390563465396224 cm^-3. The drain region is of the material SiGe with a length of 0.86 micrometers and it is doped with Arsenic at a concentration of 789232742817706541056 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.008)
(define Lgs 0.38)
(define Lgl 0.93)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.86)
(define Ld 0.86)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
70026781103448473600
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
842201330648392138752
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
129752390563465396224
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
789232742817706541056
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
449 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.86 micrometers and it is doped with Phosphorus at a concentration of 173504522412764954624 cm^-3. The short gate region is of the material SiGe with a length of 0.56 micrometers and it is doped with Arsenic at a concentration of 473621981705913106432 cm^-3. The long gate region is of the material SiGe with a length of 0.71 micrometers and it is doped with Boron at a concentration of 929657100718979547136 cm^-3. The drain region is of the material Germanium with a length of 0.86 micrometers and it is doped with Boron at a concentration of 613880959397551407104 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.004)
(define Lgs 0.56)
(define Lgl 0.71)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.86)
(define Ld 0.86)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
173504522412764954624
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
473621981705913106432
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
929657100718979547136
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
613880959397551407104
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
450 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.69 micrometers and it is doped with Phosphorus at a concentration of 142211804920698044416 cm^-3. The short gate region is of the material Silicon with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 279727228889144033280 cm^-3. The long gate region is of the material Germanium with a length of 0.6 micrometers and it is doped with Phosphorus at a concentration of 233164487039524962304 cm^-3. The drain region is of the material SiGe with a length of 0.69 micrometers and it is doped with Arsenic at a concentration of 379061835268207673344 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.01)
(define Lgs 0.23)
(define Lgl 0.6)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.69)
(define Ld 0.69)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
142211804920698044416
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
279727228889144033280
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
233164487039524962304
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
379061835268207673344
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
451 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.83 micrometers and it is doped with Arsenic at a concentration of 579001346792398520320 cm^-3. The short gate region is of the material Silicon with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 952033326216771665920 cm^-3. The long gate region is of the material Diamond with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 922817677006956920832 cm^-3. The drain region is of the material SiGe with a length of 0.83 micrometers and it is doped with Phosphorus at a concentration of 90824031523530014720 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.004)
(define Lgs 0.82)
(define Lgl 0.08)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.83)
(define Ld 0.83)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
579001346792398520320
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
952033326216771665920
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
922817677006956920832
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
90824031523530014720
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
452 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 698739741170004262912 cm^-3. The short gate region is of the material Diamond with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 780717493554236227584 cm^-3. The long gate region is of the material GaN with a length of 0.12 micrometers and it is doped with Phosphorus at a concentration of 482135621945962790912 cm^-3. The drain region is of the material Diamond with a length of 0.34 micrometers and it is doped with Boron at a concentration of 954327009727689785344 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.007)
(define Lgs 0.93)
(define Lgl 0.12)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.34)
(define Ld 0.34)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
698739741170004262912
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
780717493554236227584
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
482135621945962790912
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
954327009727689785344
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
453 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.81 micrometers and it is doped with Phosphorus at a concentration of 268525567948521865216 cm^-3. The short gate region is of the material Diamond with a length of 0.49 micrometers and it is doped with Phosphorus at a concentration of 489217289109061763072 cm^-3. The long gate region is of the material Silicon with a length of 0.62 micrometers and it is doped with Boron at a concentration of 292624241631867535360 cm^-3. The drain region is of the material Germanium with a length of 0.81 micrometers and it is doped with Boron at a concentration of 771943591627005493248 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.009)
(define Lgs 0.49)
(define Lgl 0.62)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.81)
(define Ld 0.81)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
268525567948521865216
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
489217289109061763072
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
292624241631867535360
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
771943591627005493248
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
454 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.9 micrometers and it is doped with Phosphorus at a concentration of 385868405717784461312 cm^-3. The short gate region is of the material SiGe with a length of 0.91 micrometers and it is doped with Boron at a concentration of 707081646023907475456 cm^-3. The long gate region is of the material SiGe with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 168280016302034255872 cm^-3. The drain region is of the material Germanium with a length of 0.9 micrometers and it is doped with Phosphorus at a concentration of 210940053232864428032 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.009)
(define Lgs 0.91)
(define Lgl 0.24)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.9)
(define Ld 0.9)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
385868405717784461312
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
707081646023907475456
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
168280016302034255872
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
210940053232864428032
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
455 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.69 micrometers and it is doped with Boron at a concentration of 487589020590428782592 cm^-3. The short gate region is of the material GaN with a length of 0.26 micrometers and it is doped with Arsenic at a concentration of 90369894026327883776 cm^-3. The long gate region is of the material Silicon with a length of 0.04 micrometers and it is doped with Boron at a concentration of 499925133679741894656 cm^-3. The drain region is of the material GaN with a length of 0.69 micrometers and it is doped with Arsenic at a concentration of 815983613231433252864 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.002)
(define Lgs 0.26)
(define Lgl 0.04)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.69)
(define Ld 0.69)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
487589020590428782592
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
90369894026327883776
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
499925133679741894656
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
815983613231433252864
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
456 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.23 micrometers and it is doped with Boron at a concentration of 558015052198985859072 cm^-3. The short gate region is of the material Silicon with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 889937378516086292480 cm^-3. The long gate region is of the material SiGe with a length of 0.98 micrometers and it is doped with Boron at a concentration of 370035932990615584768 cm^-3. The drain region is of the material Germanium with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 98453428685180452864 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.008)
(define Lgs 0.41)
(define Lgl 0.98)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.23)
(define Ld 0.23)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
558015052198985859072
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
889937378516086292480
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
370035932990615584768
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
98453428685180452864
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
457 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.97 micrometers and it is doped with Phosphorus at a concentration of 437389126818664677376 cm^-3. The short gate region is of the material GaN with a length of 0.36 micrometers and it is doped with Boron at a concentration of 42382707153817526272 cm^-3. The long gate region is of the material GaN with a length of 0.64 micrometers and it is doped with Arsenic at a concentration of 829653741089884602368 cm^-3. The drain region is of the material GaN with a length of 0.97 micrometers and it is doped with Phosphorus at a concentration of 800397819635996295168 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.004)
(define Lgs 0.36)
(define Lgl 0.64)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.97)
(define Ld 0.97)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
437389126818664677376
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
42382707153817526272
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
829653741089884602368
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
800397819635996295168
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
458 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.07 micrometers and it is doped with Arsenic at a concentration of 310902841927212335104 cm^-3. The short gate region is of the material SiGe with a length of 0.64 micrometers and it is doped with Boron at a concentration of 946489962754614755328 cm^-3. The long gate region is of the material SiGe with a length of 0.67 micrometers and it is doped with Phosphorus at a concentration of 312130826057281044480 cm^-3. The drain region is of the material Germanium with a length of 0.07 micrometers and it is doped with Phosphorus at a concentration of 908820759205548523520 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.004)
(define Lgs 0.64)
(define Lgl 0.67)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.07)
(define Ld 0.07)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
310902841927212335104
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
946489962754614755328
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
312130826057281044480
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
908820759205548523520
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
459 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.05 micrometers and it is doped with Phosphorus at a concentration of 347502883198857248768 cm^-3. The short gate region is of the material GaN with a length of 0.64 micrometers and it is doped with Phosphorus at a concentration of 889191662651132608512 cm^-3. The long gate region is of the material SiGe with a length of 0.61 micrometers and it is doped with Boron at a concentration of 726050887283730939904 cm^-3. The drain region is of the material Diamond with a length of 0.05 micrometers and it is doped with Boron at a concentration of 221703294804485177344 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.008)
(define Lgs 0.64)
(define Lgl 0.61)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.05)
(define Ld 0.05)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
347502883198857248768
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
889191662651132608512
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
726050887283730939904
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
221703294804485177344
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
460 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.64 micrometers and it is doped with Phosphorus at a concentration of 682848028374577053696 cm^-3. The short gate region is of the material GaN with a length of 0.61 micrometers and it is doped with Phosphorus at a concentration of 453134450710288138240 cm^-3. The long gate region is of the material GaN with a length of 0.32 micrometers and it is doped with Phosphorus at a concentration of 289928101081160351744 cm^-3. The drain region is of the material SiGe with a length of 0.64 micrometers and it is doped with Arsenic at a concentration of 85949913013195915264 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.006)
(define Lgs 0.61)
(define Lgl 0.32)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.64)
(define Ld 0.64)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
682848028374577053696
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
453134450710288138240
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
289928101081160351744
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
85949913013195915264
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
461 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.69 micrometers and it is doped with Arsenic at a concentration of 461806198402740781056 cm^-3. The short gate region is of the material Diamond with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 721546291201810890752 cm^-3. The long gate region is of the material Silicon with a length of 0.44 micrometers and it is doped with Phosphorus at a concentration of 860719832337864851456 cm^-3. The drain region is of the material Germanium with a length of 0.69 micrometers and it is doped with Arsenic at a concentration of 411429663903512002560 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.009)
(define Lgs 0.82)
(define Lgl 0.44)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.69)
(define Ld 0.69)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
461806198402740781056
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
721546291201810890752
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
860719832337864851456
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
411429663903512002560
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
462 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.82 micrometers and it is doped with Boron at a concentration of 34450241232511447040 cm^-3. The short gate region is of the material SiGe with a length of 0.09 micrometers and it is doped with Boron at a concentration of 247423906296955863040 cm^-3. The long gate region is of the material Silicon with a length of 0.12 micrometers and it is doped with Boron at a concentration of 347656362311590739968 cm^-3. The drain region is of the material SiGe with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 544451289801631989760 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.008)
(define Lgs 0.09)
(define Lgl 0.12)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.82)
(define Ld 0.82)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
34450241232511447040
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
247423906296955863040
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
347656362311590739968
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
544451289801631989760
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
463 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.4 micrometers and it is doped with Boron at a concentration of 836380951981089619968 cm^-3. The short gate region is of the material Germanium with a length of 0.46 micrometers and it is doped with Arsenic at a concentration of 579804416602007666688 cm^-3. The long gate region is of the material SiGe with a length of 0.87 micrometers and it is doped with Arsenic at a concentration of 832781930742319022080 cm^-3. The drain region is of the material SiGe with a length of 0.4 micrometers and it is doped with Boron at a concentration of 145523279037337272320 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.002)
(define Lgs 0.46)
(define Lgl 0.87)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.4)
(define Ld 0.4)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
836380951981089619968
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
579804416602007666688
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
832781930742319022080
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
145523279037337272320
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
464 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.05 micrometers and it is doped with Arsenic at a concentration of 129300770869008072704 cm^-3. The short gate region is of the material Diamond with a length of 0.56 micrometers and it is doped with Phosphorus at a concentration of 145591346577906974720 cm^-3. The long gate region is of the material GaN with a length of 0.65 micrometers and it is doped with Arsenic at a concentration of 911307975568713711616 cm^-3. The drain region is of the material Germanium with a length of 0.05 micrometers and it is doped with Phosphorus at a concentration of 286364281601441562624 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.002)
(define Lgs 0.56)
(define Lgl 0.65)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.05)
(define Ld 0.05)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
129300770869008072704
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
145591346577906974720
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
911307975568713711616
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
286364281601441562624
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
465 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 739556539453090037760 cm^-3. The short gate region is of the material GaN with a length of 0.78 micrometers and it is doped with Phosphorus at a concentration of 497374013635026092032 cm^-3. The long gate region is of the material GaN with a length of 0.46 micrometers and it is doped with Phosphorus at a concentration of 637421951243121459200 cm^-3. The drain region is of the material Silicon with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 237670434776933433344 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.006)
(define Lgs 0.78)
(define Lgl 0.46)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.24)
(define Ld 0.24)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
739556539453090037760
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
497374013635026092032
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
637421951243121459200
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
237670434776933433344
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
466 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.52 micrometers and it is doped with Phosphorus at a concentration of 150140892003133849600 cm^-3. The short gate region is of the material GaN with a length of 0.36 micrometers and it is doped with Boron at a concentration of 996960565702323863552 cm^-3. The long gate region is of the material Germanium with a length of 0.44 micrometers and it is doped with Arsenic at a concentration of 499465862307175727104 cm^-3. The drain region is of the material Silicon with a length of 0.52 micrometers and it is doped with Boron at a concentration of 948784230509450100736 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.008)
(define Lgs 0.36)
(define Lgl 0.44)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.52)
(define Ld 0.52)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
150140892003133849600
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
996960565702323863552
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
499465862307175727104
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
948784230509450100736
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
467 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.95 micrometers and it is doped with Arsenic at a concentration of 298945836408642994176 cm^-3. The short gate region is of the material GaN with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 947518179908614881280 cm^-3. The long gate region is of the material Silicon with a length of 0.62 micrometers and it is doped with Arsenic at a concentration of 613214115124633403392 cm^-3. The drain region is of the material Germanium with a length of 0.95 micrometers and it is doped with Boron at a concentration of 814427622876869427200 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.003)
(define Lgs 0.43)
(define Lgl 0.62)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.95)
(define Ld 0.95)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
298945836408642994176
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
947518179908614881280
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
613214115124633403392
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
814427622876869427200
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
468 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.37 micrometers and it is doped with Boron at a concentration of 691912412306277793792 cm^-3. The short gate region is of the material Diamond with a length of 0.17 micrometers and it is doped with Arsenic at a concentration of 396768699187636600832 cm^-3. The long gate region is of the material Diamond with a length of 0.28 micrometers and it is doped with Boron at a concentration of 564127368551963820032 cm^-3. The drain region is of the material Diamond with a length of 0.37 micrometers and it is doped with Boron at a concentration of 422605195474531516416 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.01 micrometers.
| (define tox 0.005)
(define Lgs 0.17)
(define Lgl 0.28)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.37)
(define Ld 0.37)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
691912412306277793792
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
396768699187636600832
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
564127368551963820032
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
422605195474531516416
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
469 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.31 micrometers and it is doped with Boron at a concentration of 777752815017013805056 cm^-3. The short gate region is of the material GaN with a length of 0.63 micrometers and it is doped with Boron at a concentration of 226824232576472580096 cm^-3. The long gate region is of the material SiGe with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 188153980611220832256 cm^-3. The drain region is of the material SiGe with a length of 0.31 micrometers and it is doped with Boron at a concentration of 437376770592293388288 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.005)
(define Lgs 0.63)
(define Lgl 0.35)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.31)
(define Ld 0.31)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
777752815017013805056
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
226824232576472580096
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
188153980611220832256
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
437376770592293388288
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
470 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.16 micrometers and it is doped with Phosphorus at a concentration of 474256709753697075200 cm^-3. The short gate region is of the material Silicon with a length of 0.71 micrometers and it is doped with Arsenic at a concentration of 428384928573696638976 cm^-3. The long gate region is of the material Germanium with a length of 0.55 micrometers and it is doped with Boron at a concentration of 866800209903198273536 cm^-3. The drain region is of the material SiGe with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 179473055351980982272 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.003)
(define Lgs 0.71)
(define Lgl 0.55)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.16)
(define Ld 0.16)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
474256709753697075200
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
428384928573696638976
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
866800209903198273536
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
179473055351980982272
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
471 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.85 micrometers and it is doped with Boron at a concentration of 572243991302506283008 cm^-3. The short gate region is of the material Diamond with a length of 0.96 micrometers and it is doped with Arsenic at a concentration of 513194590073817792512 cm^-3. The long gate region is of the material SiGe with a length of 0.58 micrometers and it is doped with Arsenic at a concentration of 591724352284966649856 cm^-3. The drain region is of the material Germanium with a length of 0.85 micrometers and it is doped with Phosphorus at a concentration of 525324906385777098752 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.006)
(define Lgs 0.96)
(define Lgl 0.58)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.85)
(define Ld 0.85)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
572243991302506283008
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
513194590073817792512
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
591724352284966649856
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
525324906385777098752
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
472 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.67 micrometers and it is doped with Boron at a concentration of 99379544669773512704 cm^-3. The short gate region is of the material Germanium with a length of 0.79 micrometers and it is doped with Phosphorus at a concentration of 83052961869467828224 cm^-3. The long gate region is of the material GaN with a length of 0.81 micrometers and it is doped with Phosphorus at a concentration of 184584928153105367040 cm^-3. The drain region is of the material Germanium with a length of 0.67 micrometers and it is doped with Arsenic at a concentration of 794472967149882310656 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.007)
(define Lgs 0.79)
(define Lgl 0.81)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.67)
(define Ld 0.67)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
99379544669773512704
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
83052961869467828224
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
184584928153105367040
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
794472967149882310656
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
473 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.59 micrometers and it is doped with Boron at a concentration of 653209245756942581760 cm^-3. The short gate region is of the material Germanium with a length of 0.27 micrometers and it is doped with Boron at a concentration of 302860282877550002176 cm^-3. The long gate region is of the material Germanium with a length of 0.37 micrometers and it is doped with Boron at a concentration of 537273343331488759808 cm^-3. The drain region is of the material Germanium with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 720889164910998454272 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.009)
(define Lgs 0.27)
(define Lgl 0.37)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.59)
(define Ld 0.59)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
653209245756942581760
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
302860282877550002176
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
537273343331488759808
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
720889164910998454272
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
474 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.16 micrometers and it is doped with Boron at a concentration of 758021237666868887552 cm^-3. The short gate region is of the material GaN with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 149042381126963134464 cm^-3. The long gate region is of the material Diamond with a length of 0.09 micrometers and it is doped with Arsenic at a concentration of 500115797062316851200 cm^-3. The drain region is of the material Germanium with a length of 0.16 micrometers and it is doped with Phosphorus at a concentration of 695998554593947811840 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.008)
(define Lgs 0.58)
(define Lgl 0.09)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.16)
(define Ld 0.16)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
758021237666868887552
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
149042381126963134464
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
500115797062316851200
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
695998554593947811840
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
475 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.7 micrometers and it is doped with Phosphorus at a concentration of 419572040044975226880 cm^-3. The short gate region is of the material Silicon with a length of 0.07 micrometers and it is doped with Arsenic at a concentration of 506912325199823896576 cm^-3. The long gate region is of the material GaN with a length of 0.25 micrometers and it is doped with Phosphorus at a concentration of 68521068649249931264 cm^-3. The drain region is of the material Diamond with a length of 0.7 micrometers and it is doped with Phosphorus at a concentration of 765091761918750097408 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.006)
(define Lgs 0.07)
(define Lgl 0.25)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.7)
(define Ld 0.7)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
419572040044975226880
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
506912325199823896576
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
68521068649249931264
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
765091761918750097408
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
476 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 232437327726338899968 cm^-3. The short gate region is of the material Diamond with a length of 0.1 micrometers and it is doped with Boron at a concentration of 706778588591768076288 cm^-3. The long gate region is of the material Germanium with a length of 0.83 micrometers and it is doped with Arsenic at a concentration of 677531864262485999616 cm^-3. The drain region is of the material Diamond with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 819481549238390489088 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.006)
(define Lgs 0.1)
(define Lgl 0.83)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.34)
(define Ld 0.34)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
232437327726338899968
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
706778588591768076288
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
677531864262485999616
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
819481549238390489088
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
477 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.37 micrometers and it is doped with Arsenic at a concentration of 851482544819013287936 cm^-3. The short gate region is of the material Silicon with a length of 0.71 micrometers and it is doped with Boron at a concentration of 837561491574348447744 cm^-3. The long gate region is of the material Germanium with a length of 0.54 micrometers and it is doped with Arsenic at a concentration of 341189867376387686400 cm^-3. The drain region is of the material SiGe with a length of 0.37 micrometers and it is doped with Phosphorus at a concentration of 633915075406563377152 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.01 micrometers.
| (define tox 0.002)
(define Lgs 0.71)
(define Lgl 0.54)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.37)
(define Ld 0.37)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
851482544819013287936
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
837561491574348447744
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
341189867376387686400
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
633915075406563377152
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
478 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.48 micrometers and it is doped with Phosphorus at a concentration of 524194620492971507712 cm^-3. The short gate region is of the material Silicon with a length of 0.77 micrometers and it is doped with Boron at a concentration of 201117000733419372544 cm^-3. The long gate region is of the material GaN with a length of 0.61 micrometers and it is doped with Boron at a concentration of 864459150168129404928 cm^-3. The drain region is of the material Silicon with a length of 0.48 micrometers and it is doped with Phosphorus at a concentration of 535460022403608739840 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.003)
(define Lgs 0.77)
(define Lgl 0.61)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.48)
(define Ld 0.48)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
524194620492971507712
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
201117000733419372544
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
864459150168129404928
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
535460022403608739840
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
479 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.07 micrometers and it is doped with Phosphorus at a concentration of 757978733944350179328 cm^-3. The short gate region is of the material SiGe with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 346618855081632989184 cm^-3. The long gate region is of the material Diamond with a length of 0.59 micrometers and it is doped with Boron at a concentration of 675843315321104236544 cm^-3. The drain region is of the material SiGe with a length of 0.07 micrometers and it is doped with Phosphorus at a concentration of 358977277470991712256 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.009)
(define Lgs 0.73)
(define Lgl 0.59)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.07)
(define Ld 0.07)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
757978733944350179328
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
346618855081632989184
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
675843315321104236544
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
358977277470991712256
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
480 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.88 micrometers and it is doped with Boron at a concentration of 842666286320186163200 cm^-3. The short gate region is of the material SiGe with a length of 0.8 micrometers and it is doped with Boron at a concentration of 814857618421244100608 cm^-3. The long gate region is of the material Silicon with a length of 0.07 micrometers and it is doped with Phosphorus at a concentration of 223789622695797653504 cm^-3. The drain region is of the material GaN with a length of 0.88 micrometers and it is doped with Boron at a concentration of 867839747392425295872 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.006)
(define Lgs 0.8)
(define Lgl 0.07)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.88)
(define Ld 0.88)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
842666286320186163200
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
814857618421244100608
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
223789622695797653504
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
867839747392425295872
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
481 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.67 micrometers and it is doped with Boron at a concentration of 952751810904796954624 cm^-3. The short gate region is of the material GaN with a length of 0.04 micrometers and it is doped with Boron at a concentration of 508668023323526299648 cm^-3. The long gate region is of the material SiGe with a length of 0.74 micrometers and it is doped with Arsenic at a concentration of 835033066843417214976 cm^-3. The drain region is of the material SiGe with a length of 0.67 micrometers and it is doped with Arsenic at a concentration of 673408630373823545344 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.01 micrometers.
| (define tox 0.006)
(define Lgs 0.04)
(define Lgl 0.74)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.67)
(define Ld 0.67)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
952751810904796954624
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
508668023323526299648
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
835033066843417214976
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
673408630373823545344
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
482 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.14 micrometers and it is doped with Phosphorus at a concentration of 26089050072087126016 cm^-3. The short gate region is of the material Germanium with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 956972826415056289792 cm^-3. The long gate region is of the material Diamond with a length of 0.18 micrometers and it is doped with Boron at a concentration of 790670890270130176000 cm^-3. The drain region is of the material Silicon with a length of 0.14 micrometers and it is doped with Boron at a concentration of 365057154032916627456 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.006)
(define Lgs 0.62)
(define Lgl 0.18)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.14)
(define Ld 0.14)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
26089050072087126016
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
956972826415056289792
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
790670890270130176000
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
365057154032916627456
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
483 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.87 micrometers and it is doped with Boron at a concentration of 62574598656272678912 cm^-3. The short gate region is of the material SiGe with a length of 0.7 micrometers and it is doped with Phosphorus at a concentration of 795108506511944450048 cm^-3. The long gate region is of the material Germanium with a length of 0.23 micrometers and it is doped with Boron at a concentration of 820587262826805723136 cm^-3. The drain region is of the material SiGe with a length of 0.87 micrometers and it is doped with Boron at a concentration of 906449699657918054400 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.009)
(define Lgs 0.7)
(define Lgl 0.23)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.87)
(define Ld 0.87)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
62574598656272678912
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
795108506511944450048
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
820587262826805723136
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
906449699657918054400
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
484 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.91 micrometers and it is doped with Arsenic at a concentration of 411738859644420882432 cm^-3. The short gate region is of the material Diamond with a length of 0.86 micrometers and it is doped with Boron at a concentration of 445034636415034720256 cm^-3. The long gate region is of the material GaN with a length of 0.64 micrometers and it is doped with Phosphorus at a concentration of 772506916109301841920 cm^-3. The drain region is of the material Silicon with a length of 0.91 micrometers and it is doped with Arsenic at a concentration of 519445214279388495872 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.003)
(define Lgs 0.86)
(define Lgl 0.64)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.91)
(define Ld 0.91)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
411738859644420882432
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
445034636415034720256
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
772506916109301841920
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
519445214279388495872
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
485 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.03 micrometers and it is doped with Boron at a concentration of 49765988895688024064 cm^-3. The short gate region is of the material SiGe with a length of 0.56 micrometers and it is doped with Phosphorus at a concentration of 253822068136608432128 cm^-3. The long gate region is of the material Germanium with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 263456368579820617728 cm^-3. The drain region is of the material Silicon with a length of 0.03 micrometers and it is doped with Boron at a concentration of 493878404702522310656 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.009)
(define Lgs 0.56)
(define Lgl 0.31)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.03)
(define Ld 0.03)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
49765988895688024064
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
253822068136608432128
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
263456368579820617728
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
493878404702522310656
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
486 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 716392840667163262976 cm^-3. The short gate region is of the material Silicon with a length of 0.94 micrometers and it is doped with Boron at a concentration of 175897905961700425728 cm^-3. The long gate region is of the material SiGe with a length of 0.64 micrometers and it is doped with Phosphorus at a concentration of 427815764851503792128 cm^-3. The drain region is of the material Germanium with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 926924419256078172160 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.008)
(define Lgs 0.94)
(define Lgl 0.64)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.63)
(define Ld 0.63)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
716392840667163262976
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
175897905961700425728
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
427815764851503792128
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
926924419256078172160
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
487 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.06 micrometers and it is doped with Phosphorus at a concentration of 483606562189246464000 cm^-3. The short gate region is of the material Diamond with a length of 0.8 micrometers and it is doped with Boron at a concentration of 139752825007549251584 cm^-3. The long gate region is of the material Diamond with a length of 0.57 micrometers and it is doped with Arsenic at a concentration of 783518906322858672128 cm^-3. The drain region is of the material Silicon with a length of 0.06 micrometers and it is doped with Phosphorus at a concentration of 57645385534103715840 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.005)
(define Lgs 0.8)
(define Lgl 0.57)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.06)
(define Ld 0.06)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
483606562189246464000
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
139752825007549251584
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
783518906322858672128
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
57645385534103715840
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
488 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.42 micrometers and it is doped with Arsenic at a concentration of 352393238865437392896 cm^-3. The short gate region is of the material Germanium with a length of 0.07 micrometers and it is doped with Arsenic at a concentration of 683619486879436636160 cm^-3. The long gate region is of the material SiGe with a length of 0.77 micrometers and it is doped with Boron at a concentration of 856117207567056240640 cm^-3. The drain region is of the material Germanium with a length of 0.42 micrometers and it is doped with Boron at a concentration of 980227548275594231808 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.01 micrometers.
| (define tox 0.002)
(define Lgs 0.07)
(define Lgl 0.77)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.42)
(define Ld 0.42)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
352393238865437392896
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
683619486879436636160
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
856117207567056240640
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
980227548275594231808
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
489 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.7 micrometers and it is doped with Arsenic at a concentration of 844959819993601015808 cm^-3. The short gate region is of the material Diamond with a length of 0.33 micrometers and it is doped with Boron at a concentration of 553505761008688824320 cm^-3. The long gate region is of the material SiGe with a length of 0.26 micrometers and it is doped with Phosphorus at a concentration of 705484156022815588352 cm^-3. The drain region is of the material GaN with a length of 0.7 micrometers and it is doped with Phosphorus at a concentration of 98323550714213138432 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.005)
(define Lgs 0.33)
(define Lgl 0.26)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.7)
(define Ld 0.7)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
844959819993601015808
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
553505761008688824320
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
705484156022815588352
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
98323550714213138432
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
490 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.71 micrometers and it is doped with Arsenic at a concentration of 268942852173739917312 cm^-3. The short gate region is of the material SiGe with a length of 0.6 micrometers and it is doped with Boron at a concentration of 844752734082592800768 cm^-3. The long gate region is of the material SiGe with a length of 0.74 micrometers and it is doped with Boron at a concentration of 855372420898938814464 cm^-3. The drain region is of the material Germanium with a length of 0.71 micrometers and it is doped with Boron at a concentration of 937051067131397668864 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.004)
(define Lgs 0.6)
(define Lgl 0.74)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.71)
(define Ld 0.71)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
268942852173739917312
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
844752734082592800768
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
855372420898938814464
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
937051067131397668864
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
491 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 942464305926727270400 cm^-3. The short gate region is of the material Silicon with a length of 0.83 micrometers and it is doped with Phosphorus at a concentration of 286770023570086133760 cm^-3. The long gate region is of the material Germanium with a length of 0.11 micrometers and it is doped with Arsenic at a concentration of 497616170125915062272 cm^-3. The drain region is of the material GaN with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 806786645804858212352 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.009)
(define Lgs 0.83)
(define Lgl 0.11)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.71)
(define Ld 0.71)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
942464305926727270400
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
286770023570086133760
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
497616170125915062272
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
806786645804858212352
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
492 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 411270533941986459648 cm^-3. The short gate region is of the material Germanium with a length of 0.74 micrometers and it is doped with Boron at a concentration of 30397723931955257344 cm^-3. The long gate region is of the material Germanium with a length of 0.86 micrometers and it is doped with Boron at a concentration of 728791172779176493056 cm^-3. The drain region is of the material Germanium with a length of 0.23 micrometers and it is doped with Boron at a concentration of 773755112728055775232 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.004)
(define Lgs 0.74)
(define Lgl 0.86)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.23)
(define Ld 0.23)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
411270533941986459648
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
30397723931955257344
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
728791172779176493056
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
773755112728055775232
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
493 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.14 micrometers and it is doped with Phosphorus at a concentration of 559864771263852183552 cm^-3. The short gate region is of the material Diamond with a length of 0.74 micrometers and it is doped with Phosphorus at a concentration of 261891657778737610752 cm^-3. The long gate region is of the material GaN with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 52956868863472975872 cm^-3. The drain region is of the material Silicon with a length of 0.14 micrometers and it is doped with Arsenic at a concentration of 313947425331620478976 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.001)
(define Lgs 0.74)
(define Lgl 0.4)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.14)
(define Ld 0.14)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
559864771263852183552
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
261891657778737610752
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
52956868863472975872
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
313947425331620478976
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
494 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.85 micrometers and it is doped with Boron at a concentration of 383347878097369169920 cm^-3. The short gate region is of the material Silicon with a length of 0.34 micrometers and it is doped with Boron at a concentration of 94185067572028620800 cm^-3. The long gate region is of the material Germanium with a length of 0.39 micrometers and it is doped with Boron at a concentration of 209509197022517657600 cm^-3. The drain region is of the material Silicon with a length of 0.85 micrometers and it is doped with Phosphorus at a concentration of 679682825427819298816 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.004)
(define Lgs 0.34)
(define Lgl 0.39)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.85)
(define Ld 0.85)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
383347878097369169920
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
94185067572028620800
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
209509197022517657600
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
679682825427819298816
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
495 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 945256658354524258304 cm^-3. The short gate region is of the material Diamond with a length of 0.22 micrometers and it is doped with Phosphorus at a concentration of 134337234652581085184 cm^-3. The long gate region is of the material Germanium with a length of 0.85 micrometers and it is doped with Boron at a concentration of 542761972091015528448 cm^-3. The drain region is of the material SiGe with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 929285180865965850624 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.006)
(define Lgs 0.22)
(define Lgl 0.85)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.3)
(define Ld 0.3)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
945256658354524258304
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
134337234652581085184
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
542761972091015528448
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
929285180865965850624
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
496 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.08 micrometers and it is doped with Boron at a concentration of 501535207707750039552 cm^-3. The short gate region is of the material GaN with a length of 0.86 micrometers and it is doped with Boron at a concentration of 201625017094822068224 cm^-3. The long gate region is of the material GaN with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 916697242479253127168 cm^-3. The drain region is of the material Silicon with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 647201392529644847104 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.008)
(define Lgs 0.86)
(define Lgl 0.59)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.08)
(define Ld 0.08)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
501535207707750039552
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
201625017094822068224
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
916697242479253127168
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
647201392529644847104
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
497 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 425681508385349304320 cm^-3. The short gate region is of the material Silicon with a length of 0.25 micrometers and it is doped with Phosphorus at a concentration of 425274289905920376832 cm^-3. The long gate region is of the material SiGe with a length of 0.75 micrometers and it is doped with Phosphorus at a concentration of 574861711823970500608 cm^-3. The drain region is of the material GaN with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 307438883986552913920 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.005)
(define Lgs 0.25)
(define Lgl 0.75)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.08)
(define Ld 0.08)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
425681508385349304320
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
425274289905920376832
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
574861711823970500608
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
307438883986552913920
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
498 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.6 micrometers and it is doped with Boron at a concentration of 988273136015856500736 cm^-3. The short gate region is of the material Silicon with a length of 0.35 micrometers and it is doped with Arsenic at a concentration of 523964964859886174208 cm^-3. The long gate region is of the material Germanium with a length of 0.96 micrometers and it is doped with Arsenic at a concentration of 949119221142444834816 cm^-3. The drain region is of the material Germanium with a length of 0.6 micrometers and it is doped with Phosphorus at a concentration of 731673996283966128128 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.005)
(define Lgs 0.35)
(define Lgl 0.96)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.6)
(define Ld 0.6)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
988273136015856500736
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
523964964859886174208
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
949119221142444834816
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
731673996283966128128
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
499 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.03 micrometers and it is doped with Phosphorus at a concentration of 778996009845839101952 cm^-3. The short gate region is of the material GaN with a length of 0.41 micrometers and it is doped with Arsenic at a concentration of 325004720066642313216 cm^-3. The long gate region is of the material Germanium with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 475470892532316110848 cm^-3. The drain region is of the material Diamond with a length of 0.03 micrometers and it is doped with Boron at a concentration of 399316460176431906816 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.003)
(define Lgs 0.41)
(define Lgl 0.82)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.03)
(define Ld 0.03)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
778996009845839101952
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
325004720066642313216
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
475470892532316110848
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
399316460176431906816
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
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