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int64 0 2k | instruction stringlengths 945 985 | output stringlengths 5.12k 5.16k |
|---|---|---|
700 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.17 micrometers and it is doped with Boron at a concentration of 231798405396414464000 cm^-3. The short gate region is of the material Germanium with a length of 0.15 micrometers and it is doped with Boron at a concentration of 528040092126835769344 cm^-3. The long gate region is of the material GaN with a length of 0.17 micrometers and it is doped with Phosphorus at a concentration of 930331419884930727936 cm^-3. The drain region is of the material Diamond with a length of 0.17 micrometers and it is doped with Arsenic at a concentration of 802087871534756003840 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.002)
(define Lgs 0.15)
(define Lgl 0.17)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.17)
(define Ld 0.17)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
231798405396414464000
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
528040092126835769344
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
930331419884930727936
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
802087871534756003840
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
701 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.53 micrometers and it is doped with Phosphorus at a concentration of 418511687971562586112 cm^-3. The short gate region is of the material GaN with a length of 0.58 micrometers and it is doped with Arsenic at a concentration of 484613997626114048000 cm^-3. The long gate region is of the material Diamond with a length of 0.06 micrometers and it is doped with Arsenic at a concentration of 580349442959811280896 cm^-3. The drain region is of the material Diamond with a length of 0.53 micrometers and it is doped with Boron at a concentration of 688368572165166071808 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.008)
(define Lgs 0.58)
(define Lgl 0.06)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.53)
(define Ld 0.53)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
418511687971562586112
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
484613997626114048000
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
580349442959811280896
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
688368572165166071808
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
702 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.19 micrometers and it is doped with Boron at a concentration of 112601038928794894336 cm^-3. The short gate region is of the material Diamond with a length of 0.6 micrometers and it is doped with Phosphorus at a concentration of 529943847968301776896 cm^-3. The long gate region is of the material Silicon with a length of 0.58 micrometers and it is doped with Arsenic at a concentration of 656539572456616099840 cm^-3. The drain region is of the material Diamond with a length of 0.19 micrometers and it is doped with Boron at a concentration of 778150614590581768192 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.008)
(define Lgs 0.6)
(define Lgl 0.58)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.19)
(define Ld 0.19)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
112601038928794894336
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
529943847968301776896
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
656539572456616099840
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
778150614590581768192
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
703 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.67 micrometers and it is doped with Boron at a concentration of 254534518866196692992 cm^-3. The short gate region is of the material Silicon with a length of 0.39 micrometers and it is doped with Phosphorus at a concentration of 210885843731567050752 cm^-3. The long gate region is of the material Diamond with a length of 0.26 micrometers and it is doped with Boron at a concentration of 485472735683755900928 cm^-3. The drain region is of the material Diamond with a length of 0.67 micrometers and it is doped with Phosphorus at a concentration of 598791646137980289024 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.006)
(define Lgs 0.39)
(define Lgl 0.26)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.67)
(define Ld 0.67)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
254534518866196692992
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
210885843731567050752
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
485472735683755900928
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
598791646137980289024
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
704 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.42 micrometers and it is doped with Arsenic at a concentration of 341701124103804026880 cm^-3. The short gate region is of the material Silicon with a length of 0.06 micrometers and it is doped with Boron at a concentration of 22137292660128161792 cm^-3. The long gate region is of the material Silicon with a length of 0.88 micrometers and it is doped with Phosphorus at a concentration of 490884966544827482112 cm^-3. The drain region is of the material GaN with a length of 0.42 micrometers and it is doped with Phosphorus at a concentration of 269771376132539219968 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.004)
(define Lgs 0.06)
(define Lgl 0.88)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.42)
(define Ld 0.42)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
341701124103804026880
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
22137292660128161792
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
490884966544827482112
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
269771376132539219968
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
705 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.89 micrometers and it is doped with Boron at a concentration of 286825865390486224896 cm^-3. The short gate region is of the material Diamond with a length of 0.39 micrometers and it is doped with Phosphorus at a concentration of 440354813426697240576 cm^-3. The long gate region is of the material Germanium with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 862435150850389573632 cm^-3. The drain region is of the material GaN with a length of 0.89 micrometers and it is doped with Arsenic at a concentration of 105007219748590698496 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.002)
(define Lgs 0.39)
(define Lgl 0.3)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.89)
(define Ld 0.89)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
286825865390486224896
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
440354813426697240576
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
862435150850389573632
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
105007219748590698496
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
706 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.02 micrometers and it is doped with Phosphorus at a concentration of 213553449117872979968 cm^-3. The short gate region is of the material GaN with a length of 0.37 micrometers and it is doped with Arsenic at a concentration of 299571438904934137856 cm^-3. The long gate region is of the material Diamond with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 75326483450796048384 cm^-3. The drain region is of the material GaN with a length of 0.02 micrometers and it is doped with Boron at a concentration of 904079602899936083968 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.005)
(define Lgs 0.37)
(define Lgl 0.19)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.02)
(define Ld 0.02)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
213553449117872979968
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
299571438904934137856
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
75326483450796048384
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
904079602899936083968
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
707 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.58 micrometers and it is doped with Arsenic at a concentration of 853582787813804343296 cm^-3. The short gate region is of the material Germanium with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 635079086228844445696 cm^-3. The long gate region is of the material GaN with a length of 0.65 micrometers and it is doped with Phosphorus at a concentration of 812548485033669689344 cm^-3. The drain region is of the material GaN with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 395411486915112599552 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.008)
(define Lgs 0.24)
(define Lgl 0.65)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.58)
(define Ld 0.58)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
853582787813804343296
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
635079086228844445696
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
812548485033669689344
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
395411486915112599552
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
708 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.79 micrometers and it is doped with Arsenic at a concentration of 14193486733630631936 cm^-3. The short gate region is of the material Diamond with a length of 0.67 micrometers and it is doped with Boron at a concentration of 295116705918441455616 cm^-3. The long gate region is of the material SiGe with a length of 0.39 micrometers and it is doped with Phosphorus at a concentration of 893619251357132652544 cm^-3. The drain region is of the material Diamond with a length of 0.79 micrometers and it is doped with Phosphorus at a concentration of 156808052701490806784 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.008)
(define Lgs 0.67)
(define Lgl 0.39)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.79)
(define Ld 0.79)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
14193486733630631936
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
295116705918441455616
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
893619251357132652544
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
156808052701490806784
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
709 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.37 micrometers and it is doped with Boron at a concentration of 453528496765406019584 cm^-3. The short gate region is of the material Diamond with a length of 0.81 micrometers and it is doped with Boron at a concentration of 640807941685202255872 cm^-3. The long gate region is of the material GaN with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 140453742053264785408 cm^-3. The drain region is of the material Diamond with a length of 0.37 micrometers and it is doped with Phosphorus at a concentration of 20904005448047198208 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.009)
(define Lgs 0.81)
(define Lgl 0.08)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.37)
(define Ld 0.37)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
453528496765406019584
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
640807941685202255872
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
140453742053264785408
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
20904005448047198208
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
710 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 651897216694484074496 cm^-3. The short gate region is of the material Silicon with a length of 0.74 micrometers and it is doped with Boron at a concentration of 672598263736518180864 cm^-3. The long gate region is of the material GaN with a length of 0.21 micrometers and it is doped with Arsenic at a concentration of 805593581935197683712 cm^-3. The drain region is of the material Germanium with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 902550965303352623104 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.007)
(define Lgs 0.74)
(define Lgl 0.21)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.4)
(define Ld 0.4)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
651897216694484074496
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
672598263736518180864
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
805593581935197683712
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
902550965303352623104
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
711 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.84 micrometers and it is doped with Boron at a concentration of 723937361042773377024 cm^-3. The short gate region is of the material Silicon with a length of 0.05 micrometers and it is doped with Phosphorus at a concentration of 541546474670369013760 cm^-3. The long gate region is of the material GaN with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 430990104215765254144 cm^-3. The drain region is of the material Diamond with a length of 0.84 micrometers and it is doped with Boron at a concentration of 752027639690935664640 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.009)
(define Lgs 0.05)
(define Lgl 0.08)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.84)
(define Ld 0.84)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
723937361042773377024
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
541546474670369013760
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
430990104215765254144
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
752027639690935664640
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
712 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.3 micrometers and it is doped with Boron at a concentration of 819441811070595235840 cm^-3. The short gate region is of the material Germanium with a length of 0.78 micrometers and it is doped with Arsenic at a concentration of 619761258958312046592 cm^-3. The long gate region is of the material Silicon with a length of 0.54 micrometers and it is doped with Boron at a concentration of 962096865056848347136 cm^-3. The drain region is of the material SiGe with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 421037521083381317632 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.006)
(define Lgs 0.78)
(define Lgl 0.54)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.3)
(define Ld 0.3)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
819441811070595235840
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
619761258958312046592
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
962096865056848347136
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
421037521083381317632
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
713 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.51 micrometers and it is doped with Boron at a concentration of 188133726100842545152 cm^-3. The short gate region is of the material Germanium with a length of 0.35 micrometers and it is doped with Boron at a concentration of 11211240048712095744 cm^-3. The long gate region is of the material Diamond with a length of 0.12 micrometers and it is doped with Phosphorus at a concentration of 200557080407876829184 cm^-3. The drain region is of the material Germanium with a length of 0.51 micrometers and it is doped with Boron at a concentration of 188202939315835437056 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.01)
(define Lgs 0.35)
(define Lgl 0.12)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.51)
(define Ld 0.51)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
188133726100842545152
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
11211240048712095744
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
200557080407876829184
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
188202939315835437056
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
714 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.97 micrometers and it is doped with Phosphorus at a concentration of 498447891346954518528 cm^-3. The short gate region is of the material Germanium with a length of 0.28 micrometers and it is doped with Boron at a concentration of 484185719884628754432 cm^-3. The long gate region is of the material Diamond with a length of 0.52 micrometers and it is doped with Phosphorus at a concentration of 7773791979247391744 cm^-3. The drain region is of the material SiGe with a length of 0.97 micrometers and it is doped with Phosphorus at a concentration of 380154986106173652992 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.009)
(define Lgs 0.28)
(define Lgl 0.52)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.97)
(define Ld 0.97)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
498447891346954518528
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
484185719884628754432
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
7773791979247391744
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
380154986106173652992
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
715 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.86 micrometers and it is doped with Boron at a concentration of 410325571081869983744 cm^-3. The short gate region is of the material SiGe with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 360519275460438917120 cm^-3. The long gate region is of the material Germanium with a length of 0.26 micrometers and it is doped with Phosphorus at a concentration of 167843227970790129664 cm^-3. The drain region is of the material GaN with a length of 0.86 micrometers and it is doped with Phosphorus at a concentration of 190542812734798004224 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.009)
(define Lgs 0.15)
(define Lgl 0.26)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.86)
(define Ld 0.86)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
410325571081869983744
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
360519275460438917120
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
167843227970790129664
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
190542812734798004224
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
716 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.66 micrometers and it is doped with Arsenic at a concentration of 212165967448443977728 cm^-3. The short gate region is of the material Diamond with a length of 0.4 micrometers and it is doped with Arsenic at a concentration of 755548076061039394816 cm^-3. The long gate region is of the material Diamond with a length of 0.48 micrometers and it is doped with Phosphorus at a concentration of 157059729614083751936 cm^-3. The drain region is of the material Silicon with a length of 0.66 micrometers and it is doped with Arsenic at a concentration of 860064844811823480832 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.002)
(define Lgs 0.4)
(define Lgl 0.48)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.66)
(define Ld 0.66)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
212165967448443977728
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
755548076061039394816
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
157059729614083751936
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
860064844811823480832
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
717 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.91 micrometers and it is doped with Boron at a concentration of 395409304530963922944 cm^-3. The short gate region is of the material Germanium with a length of 0.23 micrometers and it is doped with Phosphorus at a concentration of 214112373042572427264 cm^-3. The long gate region is of the material GaN with a length of 0.95 micrometers and it is doped with Boron at a concentration of 573849776217816956928 cm^-3. The drain region is of the material Silicon with a length of 0.91 micrometers and it is doped with Arsenic at a concentration of 547711801449842343936 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.005)
(define Lgs 0.23)
(define Lgl 0.95)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.91)
(define Ld 0.91)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
395409304530963922944
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
214112373042572427264
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
573849776217816956928
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
547711801449842343936
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
718 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 873449175610623131648 cm^-3. The short gate region is of the material GaN with a length of 0.31 micrometers and it is doped with Arsenic at a concentration of 531118425214035034112 cm^-3. The long gate region is of the material Diamond with a length of 0.37 micrometers and it is doped with Arsenic at a concentration of 157720248966394970112 cm^-3. The drain region is of the material GaN with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 353414004175755673600 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.008)
(define Lgs 0.31)
(define Lgl 0.37)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.93)
(define Ld 0.93)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
873449175610623131648
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
531118425214035034112
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
157720248966394970112
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
353414004175755673600
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
719 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.97 micrometers and it is doped with Boron at a concentration of 124139282525199204352 cm^-3. The short gate region is of the material GaN with a length of 0.78 micrometers and it is doped with Arsenic at a concentration of 626238864820982906880 cm^-3. The long gate region is of the material Diamond with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 483713183441998970880 cm^-3. The drain region is of the material SiGe with a length of 0.97 micrometers and it is doped with Boron at a concentration of 573295303472623124480 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.008)
(define Lgs 0.78)
(define Lgl 0.28)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.97)
(define Ld 0.97)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
124139282525199204352
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
626238864820982906880
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
483713183441998970880
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
573295303472623124480
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
720 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.28 micrometers and it is doped with Boron at a concentration of 548114295838018764800 cm^-3. The short gate region is of the material Germanium with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 765319586026395271168 cm^-3. The long gate region is of the material GaN with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 880708361727657246720 cm^-3. The drain region is of the material Germanium with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 747241184619087527936 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.005)
(define Lgs 0.23)
(define Lgl 0.04)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.28)
(define Ld 0.28)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
548114295838018764800
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
765319586026395271168
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
880708361727657246720
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
747241184619087527936
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
721 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 350617756237641940992 cm^-3. The short gate region is of the material GaN with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 899805498125717209088 cm^-3. The long gate region is of the material GaN with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 697898933963087020032 cm^-3. The drain region is of the material Diamond with a length of 0.08 micrometers and it is doped with Arsenic at a concentration of 744744516092873539584 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.006)
(define Lgs 0.55)
(define Lgl 0.43)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.08)
(define Ld 0.08)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
350617756237641940992
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
899805498125717209088
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
697898933963087020032
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
744744516092873539584
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
722 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.64 micrometers and it is doped with Arsenic at a concentration of 627622720793526403072 cm^-3. The short gate region is of the material SiGe with a length of 0.77 micrometers and it is doped with Phosphorus at a concentration of 536995320467594280960 cm^-3. The long gate region is of the material Diamond with a length of 0.22 micrometers and it is doped with Phosphorus at a concentration of 322018766245104844800 cm^-3. The drain region is of the material GaN with a length of 0.64 micrometers and it is doped with Boron at a concentration of 193628904872278392832 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.001)
(define Lgs 0.77)
(define Lgl 0.22)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.64)
(define Ld 0.64)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
627622720793526403072
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
536995320467594280960
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
322018766245104844800
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
193628904872278392832
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
723 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.85 micrometers and it is doped with Arsenic at a concentration of 868110399838025154560 cm^-3. The short gate region is of the material Germanium with a length of 0.21 micrometers and it is doped with Arsenic at a concentration of 830893698682216382464 cm^-3. The long gate region is of the material GaN with a length of 0.61 micrometers and it is doped with Arsenic at a concentration of 984615132181513109504 cm^-3. The drain region is of the material Diamond with a length of 0.85 micrometers and it is doped with Boron at a concentration of 322682595251567067136 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.005)
(define Lgs 0.21)
(define Lgl 0.61)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.85)
(define Ld 0.85)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
868110399838025154560
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
830893698682216382464
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
984615132181513109504
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
322682595251567067136
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
724 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.1 micrometers and it is doped with Phosphorus at a concentration of 553999133154631876608 cm^-3. The short gate region is of the material GaN with a length of 0.32 micrometers and it is doped with Arsenic at a concentration of 45092409381923897344 cm^-3. The long gate region is of the material GaN with a length of 0.99 micrometers and it is doped with Arsenic at a concentration of 61840979163147960320 cm^-3. The drain region is of the material Germanium with a length of 0.1 micrometers and it is doped with Phosphorus at a concentration of 380131691162054557696 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.004)
(define Lgs 0.32)
(define Lgl 0.99)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.1)
(define Ld 0.1)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
553999133154631876608
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
45092409381923897344
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
61840979163147960320
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
380131691162054557696
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
725 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.77 micrometers and it is doped with Phosphorus at a concentration of 80777910925237256192 cm^-3. The short gate region is of the material Germanium with a length of 0.07 micrometers and it is doped with Phosphorus at a concentration of 377133927199501058048 cm^-3. The long gate region is of the material SiGe with a length of 0.8 micrometers and it is doped with Arsenic at a concentration of 13724104662169229312 cm^-3. The drain region is of the material Germanium with a length of 0.77 micrometers and it is doped with Arsenic at a concentration of 597695838110766727168 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.002)
(define Lgs 0.07)
(define Lgl 0.8)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.77)
(define Ld 0.77)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
80777910925237256192
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
377133927199501058048
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
13724104662169229312
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
597695838110766727168
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
726 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.02 micrometers and it is doped with Phosphorus at a concentration of 684236685809502257152 cm^-3. The short gate region is of the material SiGe with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 589670639452098134016 cm^-3. The long gate region is of the material Diamond with a length of 0.19 micrometers and it is doped with Phosphorus at a concentration of 239256509211073839104 cm^-3. The drain region is of the material Germanium with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 638205971568701472768 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.006)
(define Lgs 0.63)
(define Lgl 0.19)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.02)
(define Ld 0.02)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
684236685809502257152
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
589670639452098134016
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
239256509211073839104
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
638205971568701472768
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
727 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.61 micrometers and it is doped with Arsenic at a concentration of 632133464250962673664 cm^-3. The short gate region is of the material SiGe with a length of 0.58 micrometers and it is doped with Arsenic at a concentration of 920283457483691655168 cm^-3. The long gate region is of the material GaN with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 142496357912116985856 cm^-3. The drain region is of the material Silicon with a length of 0.61 micrometers and it is doped with Arsenic at a concentration of 604482459227227160576 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.007)
(define Lgs 0.58)
(define Lgl 0.59)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.61)
(define Ld 0.61)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
632133464250962673664
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
920283457483691655168
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
142496357912116985856
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
604482459227227160576
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
728 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 574159348390583074816 cm^-3. The short gate region is of the material Silicon with a length of 0.32 micrometers and it is doped with Arsenic at a concentration of 820705681354090741760 cm^-3. The long gate region is of the material Diamond with a length of 0.32 micrometers and it is doped with Boron at a concentration of 811216554472243068928 cm^-3. The drain region is of the material GaN with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 265325466253801291776 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.006)
(define Lgs 0.32)
(define Lgl 0.32)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.71)
(define Ld 0.71)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
574159348390583074816
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
820705681354090741760
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
811216554472243068928
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
265325466253801291776
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
729 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.09 micrometers and it is doped with Arsenic at a concentration of 522742489499159494656 cm^-3. The short gate region is of the material GaN with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 266115197897126215680 cm^-3. The long gate region is of the material GaN with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 54532820896600498176 cm^-3. The drain region is of the material SiGe with a length of 0.09 micrometers and it is doped with Boron at a concentration of 549408385053669588992 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.006)
(define Lgs 0.63)
(define Lgl 0.31)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.09)
(define Ld 0.09)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
522742489499159494656
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
266115197897126215680
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
54532820896600498176
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
549408385053669588992
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
730 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.68 micrometers and it is doped with Phosphorus at a concentration of 662009993324836683776 cm^-3. The short gate region is of the material GaN with a length of 0.28 micrometers and it is doped with Boron at a concentration of 114293257955412197376 cm^-3. The long gate region is of the material Silicon with a length of 0.14 micrometers and it is doped with Boron at a concentration of 494946162381166215168 cm^-3. The drain region is of the material GaN with a length of 0.68 micrometers and it is doped with Boron at a concentration of 935996099082056892416 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.005)
(define Lgs 0.28)
(define Lgl 0.14)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.68)
(define Ld 0.68)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
662009993324836683776
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
114293257955412197376
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
494946162381166215168
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
935996099082056892416
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
731 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.51 micrometers and it is doped with Phosphorus at a concentration of 267843391146675601408 cm^-3. The short gate region is of the material Silicon with a length of 0.49 micrometers and it is doped with Boron at a concentration of 704289536668259319808 cm^-3. The long gate region is of the material Germanium with a length of 0.64 micrometers and it is doped with Phosphorus at a concentration of 570619670088298790912 cm^-3. The drain region is of the material SiGe with a length of 0.51 micrometers and it is doped with Boron at a concentration of 911222117773745586176 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.008)
(define Lgs 0.49)
(define Lgl 0.64)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.51)
(define Ld 0.51)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
267843391146675601408
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
704289536668259319808
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
570619670088298790912
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
911222117773745586176
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
732 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 397376013757417521152 cm^-3. The short gate region is of the material Germanium with a length of 0.72 micrometers and it is doped with Arsenic at a concentration of 757576792601862995968 cm^-3. The long gate region is of the material GaN with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 490467331791549235200 cm^-3. The drain region is of the material Silicon with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 226017787419730771968 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.009)
(define Lgs 0.72)
(define Lgl 0.76)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.55)
(define Ld 0.55)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
397376013757417521152
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
757576792601862995968
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
490467331791549235200
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
226017787419730771968
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
733 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.19 micrometers and it is doped with Boron at a concentration of 670149647896476385280 cm^-3. The short gate region is of the material Germanium with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 248661552166553059328 cm^-3. The long gate region is of the material Diamond with a length of 0.51 micrometers and it is doped with Phosphorus at a concentration of 978538909766054313984 cm^-3. The drain region is of the material GaN with a length of 0.19 micrometers and it is doped with Boron at a concentration of 803087310476681412608 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.004)
(define Lgs 0.92)
(define Lgl 0.51)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.19)
(define Ld 0.19)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
670149647896476385280
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
248661552166553059328
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
978538909766054313984
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
803087310476681412608
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
734 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.61 micrometers and it is doped with Arsenic at a concentration of 784187914259363921920 cm^-3. The short gate region is of the material Silicon with a length of 0.46 micrometers and it is doped with Boron at a concentration of 251341506943364661248 cm^-3. The long gate region is of the material GaN with a length of 0.32 micrometers and it is doped with Boron at a concentration of 751934662622127456256 cm^-3. The drain region is of the material Germanium with a length of 0.61 micrometers and it is doped with Arsenic at a concentration of 536513677025388003328 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.007)
(define Lgs 0.46)
(define Lgl 0.32)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.61)
(define Ld 0.61)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
784187914259363921920
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
251341506943364661248
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
751934662622127456256
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
536513677025388003328
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
735 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.35 micrometers and it is doped with Arsenic at a concentration of 553137976184791367680 cm^-3. The short gate region is of the material SiGe with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 177535961482661691392 cm^-3. The long gate region is of the material Silicon with a length of 0.36 micrometers and it is doped with Boron at a concentration of 255990325284792827904 cm^-3. The drain region is of the material Diamond with a length of 0.35 micrometers and it is doped with Boron at a concentration of 734777778836735262720 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.004)
(define Lgs 0.63)
(define Lgl 0.36)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.35)
(define Ld 0.35)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
553137976184791367680
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
177535961482661691392
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
255990325284792827904
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
734777778836735262720
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
736 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.39 micrometers and it is doped with Phosphorus at a concentration of 709978889550171078656 cm^-3. The short gate region is of the material GaN with a length of 0.17 micrometers and it is doped with Arsenic at a concentration of 880791899929969295360 cm^-3. The long gate region is of the material Diamond with a length of 0.27 micrometers and it is doped with Phosphorus at a concentration of 271086915464028454912 cm^-3. The drain region is of the material SiGe with a length of 0.39 micrometers and it is doped with Phosphorus at a concentration of 743862949098783768576 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.006)
(define Lgs 0.17)
(define Lgl 0.27)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.39)
(define Ld 0.39)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
709978889550171078656
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
880791899929969295360
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
271086915464028454912
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
743862949098783768576
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
737 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 526797543339529207808 cm^-3. The short gate region is of the material Silicon with a length of 0.79 micrometers and it is doped with Boron at a concentration of 855251204652358565888 cm^-3. The long gate region is of the material Germanium with a length of 0.45 micrometers and it is doped with Phosphorus at a concentration of 605211831251858358272 cm^-3. The drain region is of the material Diamond with a length of 0.02 micrometers and it is doped with Boron at a concentration of 827352040185599098880 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.007)
(define Lgs 0.79)
(define Lgl 0.45)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.02)
(define Ld 0.02)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
526797543339529207808
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
855251204652358565888
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
605211831251858358272
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
827352040185599098880
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
738 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.78 micrometers and it is doped with Phosphorus at a concentration of 990304047091685916672 cm^-3. The short gate region is of the material Germanium with a length of 0.2 micrometers and it is doped with Boron at a concentration of 12929525011209857024 cm^-3. The long gate region is of the material GaN with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 806075043941672026112 cm^-3. The drain region is of the material SiGe with a length of 0.78 micrometers and it is doped with Arsenic at a concentration of 991211014850590146560 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.002)
(define Lgs 0.2)
(define Lgl 0.55)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.78)
(define Ld 0.78)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
990304047091685916672
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
12929525011209857024
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
806075043941672026112
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
991211014850590146560
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
739 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.21 micrometers and it is doped with Boron at a concentration of 513011172971450990592 cm^-3. The short gate region is of the material GaN with a length of 0.94 micrometers and it is doped with Phosphorus at a concentration of 242285383768449155072 cm^-3. The long gate region is of the material GaN with a length of 0.46 micrometers and it is doped with Phosphorus at a concentration of 142346693809515298816 cm^-3. The drain region is of the material Silicon with a length of 0.21 micrometers and it is doped with Phosphorus at a concentration of 794395476461142671360 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.009)
(define Lgs 0.94)
(define Lgl 0.46)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.21)
(define Ld 0.21)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
513011172971450990592
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
242285383768449155072
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
142346693809515298816
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
794395476461142671360
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
740 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.05 micrometers and it is doped with Boron at a concentration of 352279751864964087808 cm^-3. The short gate region is of the material Diamond with a length of 0.52 micrometers and it is doped with Arsenic at a concentration of 617313368459566514176 cm^-3. The long gate region is of the material GaN with a length of 0.94 micrometers and it is doped with Boron at a concentration of 194143316792579555328 cm^-3. The drain region is of the material GaN with a length of 0.05 micrometers and it is doped with Phosphorus at a concentration of 921609075523305078784 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.003)
(define Lgs 0.52)
(define Lgl 0.94)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.05)
(define Ld 0.05)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
352279751864964087808
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
617313368459566514176
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
194143316792579555328
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
921609075523305078784
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
741 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.69 micrometers and it is doped with Boron at a concentration of 742372187920566583296 cm^-3. The short gate region is of the material Germanium with a length of 0.86 micrometers and it is doped with Boron at a concentration of 434272345798033932288 cm^-3. The long gate region is of the material Diamond with a length of 0.66 micrometers and it is doped with Phosphorus at a concentration of 417599382506851139584 cm^-3. The drain region is of the material Silicon with a length of 0.69 micrometers and it is doped with Phosphorus at a concentration of 580578931205159780352 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.006)
(define Lgs 0.86)
(define Lgl 0.66)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.69)
(define Ld 0.69)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
742372187920566583296
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
434272345798033932288
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
417599382506851139584
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
580578931205159780352
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
742 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.4 micrometers and it is doped with Boron at a concentration of 124517927950794260480 cm^-3. The short gate region is of the material Silicon with a length of 0.37 micrometers and it is doped with Arsenic at a concentration of 100946247631167471616 cm^-3. The long gate region is of the material Diamond with a length of 0.67 micrometers and it is doped with Phosphorus at a concentration of 428054884081481809920 cm^-3. The drain region is of the material Silicon with a length of 0.4 micrometers and it is doped with Arsenic at a concentration of 651063629627236286464 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.003)
(define Lgs 0.37)
(define Lgl 0.67)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.4)
(define Ld 0.4)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
124517927950794260480
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
100946247631167471616
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
428054884081481809920
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
651063629627236286464
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
743 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.73 micrometers and it is doped with Phosphorus at a concentration of 735387787932287238144 cm^-3. The short gate region is of the material Diamond with a length of 0.59 micrometers and it is doped with Arsenic at a concentration of 172198722875701100544 cm^-3. The long gate region is of the material SiGe with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 395151026076425781248 cm^-3. The drain region is of the material Germanium with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 584261559055819079680 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.001)
(define Lgs 0.59)
(define Lgl 0.55)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.73)
(define Ld 0.73)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
735387787932287238144
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
172198722875701100544
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
395151026076425781248
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
584261559055819079680
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
744 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 144933290144499580928 cm^-3. The short gate region is of the material Germanium with a length of 0.61 micrometers and it is doped with Arsenic at a concentration of 880360344300721274880 cm^-3. The long gate region is of the material SiGe with a length of 0.23 micrometers and it is doped with Boron at a concentration of 435248211396692541440 cm^-3. The drain region is of the material Silicon with a length of 0.16 micrometers and it is doped with Phosphorus at a concentration of 928793556367819145216 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.002)
(define Lgs 0.61)
(define Lgl 0.23)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.16)
(define Ld 0.16)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
144933290144499580928
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
880360344300721274880
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
435248211396692541440
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
928793556367819145216
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
745 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 331551717342418436096 cm^-3. The short gate region is of the material Diamond with a length of 0.37 micrometers and it is doped with Phosphorus at a concentration of 128816788839116996608 cm^-3. The long gate region is of the material Diamond with a length of 0.14 micrometers and it is doped with Boron at a concentration of 581912506984704638976 cm^-3. The drain region is of the material Germanium with a length of 0.93 micrometers and it is doped with Boron at a concentration of 943366942119122829312 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.007)
(define Lgs 0.37)
(define Lgl 0.14)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.93)
(define Ld 0.93)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
331551717342418436096
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
128816788839116996608
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
581912506984704638976
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
943366942119122829312
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
746 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.65 micrometers and it is doped with Boron at a concentration of 359941501927382319104 cm^-3. The short gate region is of the material Silicon with a length of 0.06 micrometers and it is doped with Arsenic at a concentration of 617680734501343330304 cm^-3. The long gate region is of the material Germanium with a length of 0.8 micrometers and it is doped with Boron at a concentration of 204989893475060023296 cm^-3. The drain region is of the material Diamond with a length of 0.65 micrometers and it is doped with Phosphorus at a concentration of 882838953329086562304 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.008)
(define Lgs 0.06)
(define Lgl 0.8)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.65)
(define Ld 0.65)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
359941501927382319104
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
617680734501343330304
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
204989893475060023296
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
882838953329086562304
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
747 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.5 micrometers and it is doped with Phosphorus at a concentration of 318440218014745886720 cm^-3. The short gate region is of the material GaN with a length of 0.39 micrometers and it is doped with Arsenic at a concentration of 884991023131546484736 cm^-3. The long gate region is of the material GaN with a length of 0.57 micrometers and it is doped with Boron at a concentration of 347015902171329331200 cm^-3. The drain region is of the material Silicon with a length of 0.5 micrometers and it is doped with Phosphorus at a concentration of 458800130493029154816 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.006)
(define Lgs 0.39)
(define Lgl 0.57)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.5)
(define Ld 0.5)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
318440218014745886720
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
884991023131546484736
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
347015902171329331200
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
458800130493029154816
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
748 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.24 micrometers and it is doped with Boron at a concentration of 691692969916675784704 cm^-3. The short gate region is of the material Diamond with a length of 0.79 micrometers and it is doped with Arsenic at a concentration of 862605471479026548736 cm^-3. The long gate region is of the material Diamond with a length of 0.02 micrometers and it is doped with Boron at a concentration of 538397535912213348352 cm^-3. The drain region is of the material Diamond with a length of 0.24 micrometers and it is doped with Arsenic at a concentration of 911601171011267854336 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.001)
(define Lgs 0.79)
(define Lgl 0.02)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.24)
(define Ld 0.24)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
691692969916675784704
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
862605471479026548736
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
538397535912213348352
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
911601171011267854336
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
749 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.66 micrometers and it is doped with Boron at a concentration of 417784814855209353216 cm^-3. The short gate region is of the material GaN with a length of 0.89 micrometers and it is doped with Boron at a concentration of 200506796381631840256 cm^-3. The long gate region is of the material SiGe with a length of 0.21 micrometers and it is doped with Phosphorus at a concentration of 67341878898641403904 cm^-3. The drain region is of the material Diamond with a length of 0.66 micrometers and it is doped with Boron at a concentration of 282129612694364389376 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.004)
(define Lgs 0.89)
(define Lgl 0.21)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.66)
(define Ld 0.66)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
417784814855209353216
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
200506796381631840256
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
67341878898641403904
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
282129612694364389376
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
750 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.9 micrometers and it is doped with Phosphorus at a concentration of 151798656842017079296 cm^-3. The short gate region is of the material SiGe with a length of 0.44 micrometers and it is doped with Arsenic at a concentration of 299949428529019355136 cm^-3. The long gate region is of the material Silicon with a length of 0.81 micrometers and it is doped with Phosphorus at a concentration of 425529444845192871936 cm^-3. The drain region is of the material GaN with a length of 0.9 micrometers and it is doped with Arsenic at a concentration of 98969267191248076800 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.005)
(define Lgs 0.44)
(define Lgl 0.81)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.9)
(define Ld 0.9)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
151798656842017079296
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
299949428529019355136
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
425529444845192871936
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
98969267191248076800
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
751 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.73 micrometers and it is doped with Phosphorus at a concentration of 503996217353103081472 cm^-3. The short gate region is of the material Silicon with a length of 0.13 micrometers and it is doped with Phosphorus at a concentration of 699060581438516232192 cm^-3. The long gate region is of the material SiGe with a length of 0.53 micrometers and it is doped with Boron at a concentration of 458473680115207634944 cm^-3. The drain region is of the material Germanium with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 848175197409254965248 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.008)
(define Lgs 0.13)
(define Lgl 0.53)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.73)
(define Ld 0.73)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
503996217353103081472
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
699060581438516232192
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
458473680115207634944
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
848175197409254965248
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
752 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 662528646446670151680 cm^-3. The short gate region is of the material Diamond with a length of 0.47 micrometers and it is doped with Boron at a concentration of 867058817193443983360 cm^-3. The long gate region is of the material Diamond with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 421796050101453062144 cm^-3. The drain region is of the material SiGe with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 254413526059854135296 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.002)
(define Lgs 0.47)
(define Lgl 0.63)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.18)
(define Ld 0.18)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
662528646446670151680
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
867058817193443983360
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
421796050101453062144
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
254413526059854135296
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
753 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.44 micrometers and it is doped with Arsenic at a concentration of 271258926943766773760 cm^-3. The short gate region is of the material GaN with a length of 0.94 micrometers and it is doped with Boron at a concentration of 109424809103049670656 cm^-3. The long gate region is of the material GaN with a length of 0.47 micrometers and it is doped with Phosphorus at a concentration of 357887301232889692160 cm^-3. The drain region is of the material Germanium with a length of 0.44 micrometers and it is doped with Arsenic at a concentration of 271041042589949526016 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.009)
(define Lgs 0.94)
(define Lgl 0.47)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.44)
(define Ld 0.44)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
271258926943766773760
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
109424809103049670656
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
357887301232889692160
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
271041042589949526016
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
754 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 51552145890631458816 cm^-3. The short gate region is of the material Diamond with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 875463642070159458304 cm^-3. The long gate region is of the material SiGe with a length of 0.21 micrometers and it is doped with Arsenic at a concentration of 659197175165121724416 cm^-3. The drain region is of the material SiGe with a length of 0.62 micrometers and it is doped with Boron at a concentration of 630826157748828372992 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.003)
(define Lgs 0.81)
(define Lgl 0.21)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.62)
(define Ld 0.62)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
51552145890631458816
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
875463642070159458304
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
659197175165121724416
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
630826157748828372992
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
755 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.66 micrometers and it is doped with Phosphorus at a concentration of 157146441887692488704 cm^-3. The short gate region is of the material Germanium with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 287587215174262718464 cm^-3. The long gate region is of the material Germanium with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 309078423296770703360 cm^-3. The drain region is of the material Silicon with a length of 0.66 micrometers and it is doped with Boron at a concentration of 694544490662019203072 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.007)
(define Lgs 0.81)
(define Lgl 0.34)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.66)
(define Ld 0.66)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
157146441887692488704
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
287587215174262718464
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
309078423296770703360
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
694544490662019203072
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
756 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.81 micrometers and it is doped with Phosphorus at a concentration of 826323636107568218112 cm^-3. The short gate region is of the material Diamond with a length of 0.82 micrometers and it is doped with Arsenic at a concentration of 74820130345775595520 cm^-3. The long gate region is of the material SiGe with a length of 0.78 micrometers and it is doped with Arsenic at a concentration of 685942969216780468224 cm^-3. The drain region is of the material Diamond with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 31275328743198552064 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.002)
(define Lgs 0.82)
(define Lgl 0.78)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.81)
(define Ld 0.81)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
826323636107568218112
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
74820130345775595520
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
685942969216780468224
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
31275328743198552064
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
757 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.17 micrometers and it is doped with Phosphorus at a concentration of 87076820601002409984 cm^-3. The short gate region is of the material Germanium with a length of 0.83 micrometers and it is doped with Phosphorus at a concentration of 792636820208821993472 cm^-3. The long gate region is of the material SiGe with a length of 0.9 micrometers and it is doped with Boron at a concentration of 853235265479448592384 cm^-3. The drain region is of the material Germanium with a length of 0.17 micrometers and it is doped with Phosphorus at a concentration of 156156736947158908928 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.004)
(define Lgs 0.83)
(define Lgl 0.9)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.17)
(define Ld 0.17)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
87076820601002409984
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
792636820208821993472
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
853235265479448592384
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
156156736947158908928
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
758 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.52 micrometers and it is doped with Phosphorus at a concentration of 396719725716197343232 cm^-3. The short gate region is of the material Silicon with a length of 0.75 micrometers and it is doped with Boron at a concentration of 732884858611380256768 cm^-3. The long gate region is of the material GaN with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 982715898467100786688 cm^-3. The drain region is of the material Silicon with a length of 0.52 micrometers and it is doped with Boron at a concentration of 788249588491099439104 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.003)
(define Lgs 0.75)
(define Lgl 0.24)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.52)
(define Ld 0.52)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
396719725716197343232
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
732884858611380256768
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
982715898467100786688
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
788249588491099439104
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
759 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 257499438962673123328 cm^-3. The short gate region is of the material GaN with a length of 0.69 micrometers and it is doped with Arsenic at a concentration of 45878232673606860800 cm^-3. The long gate region is of the material Silicon with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 401564556126130536448 cm^-3. The drain region is of the material SiGe with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 611337162473517613056 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.007)
(define Lgs 0.69)
(define Lgl 0.82)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.55)
(define Ld 0.55)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
257499438962673123328
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
45878232673606860800
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
401564556126130536448
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
611337162473517613056
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
760 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 166045603343248097280 cm^-3. The short gate region is of the material Diamond with a length of 0.88 micrometers and it is doped with Phosphorus at a concentration of 540651814455963549696 cm^-3. The long gate region is of the material GaN with a length of 0.1 micrometers and it is doped with Boron at a concentration of 921784448390188498944 cm^-3. The drain region is of the material Diamond with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 581565536956186624000 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.005)
(define Lgs 0.88)
(define Lgl 0.1)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.43)
(define Ld 0.43)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
166045603343248097280
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
540651814455963549696
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
921784448390188498944
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
581565536956186624000
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
761 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 928684823505655431168 cm^-3. The short gate region is of the material Silicon with a length of 0.7 micrometers and it is doped with Arsenic at a concentration of 799755634100145487872 cm^-3. The long gate region is of the material Silicon with a length of 0.57 micrometers and it is doped with Phosphorus at a concentration of 105705509159862042624 cm^-3. The drain region is of the material Silicon with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 14466771530733379584 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.002)
(define Lgs 0.7)
(define Lgl 0.57)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.92)
(define Ld 0.92)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
928684823505655431168
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
799755634100145487872
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
105705509159862042624
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
14466771530733379584
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
762 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.35 micrometers and it is doped with Arsenic at a concentration of 998145711130617053184 cm^-3. The short gate region is of the material Germanium with a length of 0.49 micrometers and it is doped with Phosphorus at a concentration of 349361795869490937856 cm^-3. The long gate region is of the material Silicon with a length of 0.34 micrometers and it is doped with Boron at a concentration of 791578238648329961472 cm^-3. The drain region is of the material Germanium with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 764389057962241425408 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.001)
(define Lgs 0.49)
(define Lgl 0.34)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.35)
(define Ld 0.35)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
998145711130617053184
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
349361795869490937856
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
791578238648329961472
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
764389057962241425408
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
763 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.58 micrometers and it is doped with Arsenic at a concentration of 699870850903536828416 cm^-3. The short gate region is of the material GaN with a length of 0.22 micrometers and it is doped with Phosphorus at a concentration of 765060716875440586752 cm^-3. The long gate region is of the material Silicon with a length of 0.33 micrometers and it is doped with Phosphorus at a concentration of 638746844422138363904 cm^-3. The drain region is of the material Germanium with a length of 0.58 micrometers and it is doped with Arsenic at a concentration of 909264970703081832448 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.005)
(define Lgs 0.22)
(define Lgl 0.33)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.58)
(define Ld 0.58)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
699870850903536828416
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
765060716875440586752
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
638746844422138363904
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
909264970703081832448
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
764 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.17 micrometers and it is doped with Phosphorus at a concentration of 979469414156392988672 cm^-3. The short gate region is of the material GaN with a length of 0.92 micrometers and it is doped with Boron at a concentration of 413449603677626695680 cm^-3. The long gate region is of the material SiGe with a length of 0.08 micrometers and it is doped with Boron at a concentration of 974203163257128353792 cm^-3. The drain region is of the material Silicon with a length of 0.17 micrometers and it is doped with Boron at a concentration of 349701423440021553152 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.009)
(define Lgs 0.92)
(define Lgl 0.08)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.17)
(define Ld 0.17)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
979469414156392988672
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
413449603677626695680
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
974203163257128353792
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
349701423440021553152
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
765 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.74 micrometers and it is doped with Arsenic at a concentration of 430709755250098700288 cm^-3. The short gate region is of the material SiGe with a length of 0.84 micrometers and it is doped with Phosphorus at a concentration of 708769419338926260224 cm^-3. The long gate region is of the material GaN with a length of 0.47 micrometers and it is doped with Arsenic at a concentration of 765022386271944835072 cm^-3. The drain region is of the material Diamond with a length of 0.74 micrometers and it is doped with Boron at a concentration of 200763913371193016320 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.008)
(define Lgs 0.84)
(define Lgl 0.47)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.74)
(define Ld 0.74)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
430709755250098700288
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
708769419338926260224
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
765022386271944835072
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
200763913371193016320
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
766 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.24 micrometers and it is doped with Boron at a concentration of 901363252475663482880 cm^-3. The short gate region is of the material Silicon with a length of 0.17 micrometers and it is doped with Phosphorus at a concentration of 411741599814630506496 cm^-3. The long gate region is of the material GaN with a length of 0.75 micrometers and it is doped with Arsenic at a concentration of 170804139227020197888 cm^-3. The drain region is of the material SiGe with a length of 0.24 micrometers and it is doped with Boron at a concentration of 331657027359681675264 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.002)
(define Lgs 0.17)
(define Lgl 0.75)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.24)
(define Ld 0.24)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
901363252475663482880
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
411741599814630506496
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
170804139227020197888
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
331657027359681675264
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
767 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.4 micrometers and it is doped with Boron at a concentration of 552321344736125517824 cm^-3. The short gate region is of the material Germanium with a length of 0.56 micrometers and it is doped with Boron at a concentration of 329519515832325636096 cm^-3. The long gate region is of the material Silicon with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 386986374112175980544 cm^-3. The drain region is of the material SiGe with a length of 0.4 micrometers and it is doped with Boron at a concentration of 794800469889970077696 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.007)
(define Lgs 0.56)
(define Lgl 0.73)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.4)
(define Ld 0.4)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
552321344736125517824
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
329519515832325636096
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
386986374112175980544
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
794800469889970077696
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
768 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.6 micrometers and it is doped with Arsenic at a concentration of 196822846649648939008 cm^-3. The short gate region is of the material GaN with a length of 0.47 micrometers and it is doped with Phosphorus at a concentration of 526880205181981949952 cm^-3. The long gate region is of the material Germanium with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 773676514430856986624 cm^-3. The drain region is of the material Silicon with a length of 0.6 micrometers and it is doped with Boron at a concentration of 811556821214315413504 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.003)
(define Lgs 0.47)
(define Lgl 0.28)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.6)
(define Ld 0.6)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
196822846649648939008
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
526880205181981949952
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
773676514430856986624
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
811556821214315413504
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
769 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.77 micrometers and it is doped with Phosphorus at a concentration of 16147391456107243520 cm^-3. The short gate region is of the material GaN with a length of 0.17 micrometers and it is doped with Boron at a concentration of 277205615430978600960 cm^-3. The long gate region is of the material GaN with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 3648775446203301376 cm^-3. The drain region is of the material Silicon with a length of 0.77 micrometers and it is doped with Phosphorus at a concentration of 369775061969440473088 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.004)
(define Lgs 0.17)
(define Lgl 0.55)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.77)
(define Ld 0.77)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
16147391456107243520
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
277205615430978600960
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
3648775446203301376
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
369775061969440473088
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
770 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.95 micrometers and it is doped with Arsenic at a concentration of 343255193599252627456 cm^-3. The short gate region is of the material Germanium with a length of 0.17 micrometers and it is doped with Boron at a concentration of 688414700055695196160 cm^-3. The long gate region is of the material Silicon with a length of 0.52 micrometers and it is doped with Phosphorus at a concentration of 279663982069849686016 cm^-3. The drain region is of the material Germanium with a length of 0.95 micrometers and it is doped with Phosphorus at a concentration of 531843471449498058752 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.007)
(define Lgs 0.17)
(define Lgl 0.52)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.95)
(define Ld 0.95)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
343255193599252627456
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
688414700055695196160
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
279663982069849686016
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
531843471449498058752
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
771 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.37 micrometers and it is doped with Phosphorus at a concentration of 204314644843676893184 cm^-3. The short gate region is of the material Silicon with a length of 0.36 micrometers and it is doped with Boron at a concentration of 731246867860033110016 cm^-3. The long gate region is of the material Germanium with a length of 0.64 micrometers and it is doped with Arsenic at a concentration of 860882950304982499328 cm^-3. The drain region is of the material Germanium with a length of 0.37 micrometers and it is doped with Boron at a concentration of 33254961821806215168 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.009)
(define Lgs 0.36)
(define Lgl 0.64)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.37)
(define Ld 0.37)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
204314644843676893184
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
731246867860033110016
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
860882950304982499328
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
33254961821806215168
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
772 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.01 micrometers and it is doped with Boron at a concentration of 520286523060701495296 cm^-3. The short gate region is of the material Germanium with a length of 0.68 micrometers and it is doped with Boron at a concentration of 720658588854591684608 cm^-3. The long gate region is of the material Germanium with a length of 0.47 micrometers and it is doped with Boron at a concentration of 80521872031454101504 cm^-3. The drain region is of the material GaN with a length of 0.01 micrometers and it is doped with Arsenic at a concentration of 734253943420962471936 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.007)
(define Lgs 0.68)
(define Lgl 0.47)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.01)
(define Ld 0.01)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
520286523060701495296
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
720658588854591684608
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
80521872031454101504
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
734253943420962471936
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
773 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.7 micrometers and it is doped with Arsenic at a concentration of 356009472666913341440 cm^-3. The short gate region is of the material SiGe with a length of 0.04 micrometers and it is doped with Arsenic at a concentration of 763542318838277079040 cm^-3. The long gate region is of the material Silicon with a length of 0.79 micrometers and it is doped with Boron at a concentration of 188300008191251087360 cm^-3. The drain region is of the material Silicon with a length of 0.7 micrometers and it is doped with Boron at a concentration of 600282771673319342080 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.009)
(define Lgs 0.04)
(define Lgl 0.79)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.7)
(define Ld 0.7)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
356009472666913341440
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
763542318838277079040
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
188300008191251087360
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
600282771673319342080
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
774 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.66 micrometers and it is doped with Arsenic at a concentration of 739673395561621225472 cm^-3. The short gate region is of the material Germanium with a length of 0.69 micrometers and it is doped with Arsenic at a concentration of 272063826574354415616 cm^-3. The long gate region is of the material Silicon with a length of 0.57 micrometers and it is doped with Boron at a concentration of 739046433911401086976 cm^-3. The drain region is of the material Diamond with a length of 0.66 micrometers and it is doped with Arsenic at a concentration of 389353156863353290752 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.006)
(define Lgs 0.69)
(define Lgl 0.57)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.66)
(define Ld 0.66)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
739673395561621225472
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
272063826574354415616
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
739046433911401086976
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
389353156863353290752
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
775 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.94 micrometers and it is doped with Boron at a concentration of 460610001468223258624 cm^-3. The short gate region is of the material GaN with a length of 0.63 micrometers and it is doped with Phosphorus at a concentration of 46840302536356397056 cm^-3. The long gate region is of the material Diamond with a length of 0.89 micrometers and it is doped with Boron at a concentration of 287615212314677739520 cm^-3. The drain region is of the material Diamond with a length of 0.94 micrometers and it is doped with Boron at a concentration of 758782995564837470208 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.007)
(define Lgs 0.63)
(define Lgl 0.89)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.94)
(define Ld 0.94)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
460610001468223258624
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
46840302536356397056
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
287615212314677739520
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
758782995564837470208
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
776 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 305242192858831519744 cm^-3. The short gate region is of the material SiGe with a length of 0.48 micrometers and it is doped with Boron at a concentration of 229195000301479854080 cm^-3. The long gate region is of the material GaN with a length of 0.05 micrometers and it is doped with Phosphorus at a concentration of 300344048207915384832 cm^-3. The drain region is of the material SiGe with a length of 0.92 micrometers and it is doped with Boron at a concentration of 282975009759190679552 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.009)
(define Lgs 0.48)
(define Lgl 0.05)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.92)
(define Ld 0.92)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
305242192858831519744
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
229195000301479854080
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
300344048207915384832
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
282975009759190679552
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
777 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.11 micrometers and it is doped with Phosphorus at a concentration of 764195829325129056256 cm^-3. The short gate region is of the material Germanium with a length of 0.27 micrometers and it is doped with Phosphorus at a concentration of 756851449895252525056 cm^-3. The long gate region is of the material SiGe with a length of 0.35 micrometers and it is doped with Boron at a concentration of 358090058634685054976 cm^-3. The drain region is of the material GaN with a length of 0.11 micrometers and it is doped with Boron at a concentration of 189826882756623204352 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.002)
(define Lgs 0.27)
(define Lgl 0.35)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.11)
(define Ld 0.11)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
764195829325129056256
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
756851449895252525056
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
358090058634685054976
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
189826882756623204352
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
778 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.2 micrometers and it is doped with Boron at a concentration of 275295019755938906112 cm^-3. The short gate region is of the material Diamond with a length of 0.92 micrometers and it is doped with Phosphorus at a concentration of 305624789987852156928 cm^-3. The long gate region is of the material GaN with a length of 0.17 micrometers and it is doped with Arsenic at a concentration of 538129267136651722752 cm^-3. The drain region is of the material GaN with a length of 0.2 micrometers and it is doped with Arsenic at a concentration of 345502040466009096192 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.002)
(define Lgs 0.92)
(define Lgl 0.17)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.2)
(define Ld 0.2)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
275295019755938906112
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
305624789987852156928
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
538129267136651722752
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
345502040466009096192
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
779 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.61 micrometers and it is doped with Arsenic at a concentration of 563130050980327849984 cm^-3. The short gate region is of the material Diamond with a length of 0.11 micrometers and it is doped with Arsenic at a concentration of 381854920553732505600 cm^-3. The long gate region is of the material Diamond with a length of 0.13 micrometers and it is doped with Arsenic at a concentration of 124459771800446779392 cm^-3. The drain region is of the material Silicon with a length of 0.61 micrometers and it is doped with Boron at a concentration of 221796864467836731392 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.003)
(define Lgs 0.11)
(define Lgl 0.13)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.61)
(define Ld 0.61)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
563130050980327849984
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
381854920553732505600
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
124459771800446779392
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
221796864467836731392
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
780 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.96 micrometers and it is doped with Arsenic at a concentration of 425621894241661222912 cm^-3. The short gate region is of the material Diamond with a length of 0.58 micrometers and it is doped with Boron at a concentration of 846374516907989794816 cm^-3. The long gate region is of the material Silicon with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 827061999721055125504 cm^-3. The drain region is of the material Diamond with a length of 0.96 micrometers and it is doped with Arsenic at a concentration of 833361588827423899648 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.006)
(define Lgs 0.58)
(define Lgl 0.51)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.96)
(define Ld 0.96)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
425621894241661222912
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
846374516907989794816
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
827061999721055125504
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
833361588827423899648
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
781 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.74 micrometers and it is doped with Phosphorus at a concentration of 47974153867383119872 cm^-3. The short gate region is of the material Germanium with a length of 0.53 micrometers and it is doped with Arsenic at a concentration of 975841004721945575424 cm^-3. The long gate region is of the material GaN with a length of 0.79 micrometers and it is doped with Phosphorus at a concentration of 156438531144239742976 cm^-3. The drain region is of the material SiGe with a length of 0.74 micrometers and it is doped with Boron at a concentration of 604334978533169168384 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.005)
(define Lgs 0.53)
(define Lgl 0.79)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.74)
(define Ld 0.74)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
47974153867383119872
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
975841004721945575424
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
156438531144239742976
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
604334978533169168384
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
782 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.38 micrometers and it is doped with Phosphorus at a concentration of 624150211319979966464 cm^-3. The short gate region is of the material Silicon with a length of 0.46 micrometers and it is doped with Boron at a concentration of 512357571185478598656 cm^-3. The long gate region is of the material Germanium with a length of 0.91 micrometers and it is doped with Arsenic at a concentration of 554576528767151374336 cm^-3. The drain region is of the material Diamond with a length of 0.38 micrometers and it is doped with Arsenic at a concentration of 222425053771968184320 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.01 micrometers.
| (define tox 0.004)
(define Lgs 0.46)
(define Lgl 0.91)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.38)
(define Ld 0.38)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
624150211319979966464
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
512357571185478598656
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
554576528767151374336
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
222425053771968184320
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
783 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.94 micrometers and it is doped with Phosphorus at a concentration of 391690115099103985664 cm^-3. The short gate region is of the material SiGe with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 975193435367117160448 cm^-3. The long gate region is of the material Silicon with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 84189511705926320128 cm^-3. The drain region is of the material SiGe with a length of 0.94 micrometers and it is doped with Boron at a concentration of 295296178501559648256 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.003)
(define Lgs 0.18)
(define Lgl 0.24)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.94)
(define Ld 0.94)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
391690115099103985664
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
975193435367117160448
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
84189511705926320128
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
295296178501559648256
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
784 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 915691867915563958272 cm^-3. The short gate region is of the material Silicon with a length of 0.51 micrometers and it is doped with Phosphorus at a concentration of 562137069893753110528 cm^-3. The long gate region is of the material Germanium with a length of 0.48 micrometers and it is doped with Arsenic at a concentration of 964023640013129908224 cm^-3. The drain region is of the material GaN with a length of 0.82 micrometers and it is doped with Arsenic at a concentration of 7826862724883792896 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.003)
(define Lgs 0.51)
(define Lgl 0.48)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.82)
(define Ld 0.82)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
915691867915563958272
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
562137069893753110528
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
964023640013129908224
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
7826862724883792896
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
785 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.07 micrometers and it is doped with Arsenic at a concentration of 733105848872439644160 cm^-3. The short gate region is of the material SiGe with a length of 0.14 micrometers and it is doped with Arsenic at a concentration of 714642893097294757888 cm^-3. The long gate region is of the material GaN with a length of 0.23 micrometers and it is doped with Boron at a concentration of 526273395566392901632 cm^-3. The drain region is of the material Germanium with a length of 0.07 micrometers and it is doped with Boron at a concentration of 468972271721355935744 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.002)
(define Lgs 0.14)
(define Lgl 0.23)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.07)
(define Ld 0.07)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
733105848872439644160
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
714642893097294757888
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
526273395566392901632
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
468972271721355935744
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
786 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.46 micrometers and it is doped with Phosphorus at a concentration of 545268886459576877056 cm^-3. The short gate region is of the material SiGe with a length of 0.81 micrometers and it is doped with Boron at a concentration of 619726161917966811136 cm^-3. The long gate region is of the material Diamond with a length of 0.36 micrometers and it is doped with Boron at a concentration of 401508486227242516480 cm^-3. The drain region is of the material GaN with a length of 0.46 micrometers and it is doped with Boron at a concentration of 400793705655877632000 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.008)
(define Lgs 0.81)
(define Lgl 0.36)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.46)
(define Ld 0.46)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
545268886459576877056
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
619726161917966811136
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
401508486227242516480
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
400793705655877632000
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
787 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.42 micrometers and it is doped with Arsenic at a concentration of 881173674547885506560 cm^-3. The short gate region is of the material SiGe with a length of 0.29 micrometers and it is doped with Arsenic at a concentration of 364851183854450900992 cm^-3. The long gate region is of the material GaN with a length of 0.52 micrometers and it is doped with Phosphorus at a concentration of 485837271259086585856 cm^-3. The drain region is of the material Diamond with a length of 0.42 micrometers and it is doped with Boron at a concentration of 849132946764284166144 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.006)
(define Lgs 0.29)
(define Lgl 0.52)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.42)
(define Ld 0.42)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
881173674547885506560
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
364851183854450900992
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
485837271259086585856
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
849132946764284166144
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
788 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.14 micrometers and it is doped with Phosphorus at a concentration of 168668911799778607104 cm^-3. The short gate region is of the material Germanium with a length of 0.7 micrometers and it is doped with Arsenic at a concentration of 786827955083275927552 cm^-3. The long gate region is of the material GaN with a length of 0.48 micrometers and it is doped with Phosphorus at a concentration of 538405257221924061184 cm^-3. The drain region is of the material Silicon with a length of 0.14 micrometers and it is doped with Arsenic at a concentration of 336300544624839622656 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.007)
(define Lgs 0.7)
(define Lgl 0.48)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.14)
(define Ld 0.14)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
168668911799778607104
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
786827955083275927552
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
538405257221924061184
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
336300544624839622656
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
789 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.89 micrometers and it is doped with Phosphorus at a concentration of 19391970326178189312 cm^-3. The short gate region is of the material Germanium with a length of 0.3 micrometers and it is doped with Boron at a concentration of 304753175060080754688 cm^-3. The long gate region is of the material Germanium with a length of 0.57 micrometers and it is doped with Phosphorus at a concentration of 965972483666297094144 cm^-3. The drain region is of the material SiGe with a length of 0.89 micrometers and it is doped with Phosphorus at a concentration of 887015732574386651136 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.004)
(define Lgs 0.3)
(define Lgl 0.57)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.89)
(define Ld 0.89)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
19391970326178189312
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
304753175060080754688
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
965972483666297094144
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
887015732574386651136
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
790 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 400231912273688395776 cm^-3. The short gate region is of the material Silicon with a length of 0.57 micrometers and it is doped with Phosphorus at a concentration of 441938054993343676416 cm^-3. The long gate region is of the material GaN with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 111764144869194055680 cm^-3. The drain region is of the material Diamond with a length of 0.58 micrometers and it is doped with Boron at a concentration of 361901022082933850112 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.003)
(define Lgs 0.57)
(define Lgl 0.73)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.58)
(define Ld 0.58)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
400231912273688395776
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
441938054993343676416
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
111764144869194055680
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
361901022082933850112
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
791 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.87 micrometers and it is doped with Phosphorus at a concentration of 219920990243720757248 cm^-3. The short gate region is of the material GaN with a length of 0.52 micrometers and it is doped with Arsenic at a concentration of 995725516232269234176 cm^-3. The long gate region is of the material Germanium with a length of 0.81 micrometers and it is doped with Boron at a concentration of 687521174373555503104 cm^-3. The drain region is of the material Silicon with a length of 0.87 micrometers and it is doped with Boron at a concentration of 510202585248854966272 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.003)
(define Lgs 0.52)
(define Lgl 0.81)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.87)
(define Ld 0.87)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
219920990243720757248
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
995725516232269234176
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
687521174373555503104
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
510202585248854966272
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
792 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.71 micrometers and it is doped with Boron at a concentration of 732747241393281695744 cm^-3. The short gate region is of the material SiGe with a length of 0.29 micrometers and it is doped with Phosphorus at a concentration of 34765515303891189760 cm^-3. The long gate region is of the material Diamond with a length of 0.71 micrometers and it is doped with Arsenic at a concentration of 225896849644236668928 cm^-3. The drain region is of the material Diamond with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 242523210934747791360 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.006)
(define Lgs 0.29)
(define Lgl 0.71)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.71)
(define Ld 0.71)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
732747241393281695744
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
34765515303891189760
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
225896849644236668928
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
242523210934747791360
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
793 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 535346271445491515392 cm^-3. The short gate region is of the material SiGe with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 973091932612184768512 cm^-3. The long gate region is of the material Diamond with a length of 0.52 micrometers and it is doped with Phosphorus at a concentration of 805594921692502687744 cm^-3. The drain region is of the material Germanium with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 932594074851847700480 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.001)
(define Lgs 0.3)
(define Lgl 0.52)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.34)
(define Ld 0.34)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
535346271445491515392
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
973091932612184768512
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
805594921692502687744
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
932594074851847700480
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
794 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.4 micrometers and it is doped with Boron at a concentration of 517986646942713380864 cm^-3. The short gate region is of the material GaN with a length of 0.06 micrometers and it is doped with Arsenic at a concentration of 266824260458160390144 cm^-3. The long gate region is of the material Diamond with a length of 0.56 micrometers and it is doped with Boron at a concentration of 69222499148118261760 cm^-3. The drain region is of the material Germanium with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 113943053610895196160 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.008)
(define Lgs 0.06)
(define Lgl 0.56)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.4)
(define Ld 0.4)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
517986646942713380864
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
266824260458160390144
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
69222499148118261760
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
113943053610895196160
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
795 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.96 micrometers and it is doped with Boron at a concentration of 833206599176816164864 cm^-3. The short gate region is of the material GaN with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 789972717718920232960 cm^-3. The long gate region is of the material SiGe with a length of 0.35 micrometers and it is doped with Boron at a concentration of 314324678475799986176 cm^-3. The drain region is of the material Silicon with a length of 0.96 micrometers and it is doped with Boron at a concentration of 25783958740864782336 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.009)
(define Lgs 0.02)
(define Lgl 0.35)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.96)
(define Ld 0.96)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
833206599176816164864
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
789972717718920232960
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
314324678475799986176
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
25783958740864782336
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
796 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.2 micrometers and it is doped with Boron at a concentration of 57524206493528514560 cm^-3. The short gate region is of the material Diamond with a length of 0.13 micrometers and it is doped with Arsenic at a concentration of 297080459296937738240 cm^-3. The long gate region is of the material SiGe with a length of 0.24 micrometers and it is doped with Arsenic at a concentration of 959254339641717030912 cm^-3. The drain region is of the material GaN with a length of 0.2 micrometers and it is doped with Phosphorus at a concentration of 740872963438691614720 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.005)
(define Lgs 0.13)
(define Lgl 0.24)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.2)
(define Ld 0.2)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
57524206493528514560
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
297080459296937738240
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
959254339641717030912
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
740872963438691614720
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
797 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.74 micrometers and it is doped with Boron at a concentration of 134584169356934168576 cm^-3. The short gate region is of the material Silicon with a length of 0.23 micrometers and it is doped with Phosphorus at a concentration of 461364960855811948544 cm^-3. The long gate region is of the material GaN with a length of 0.39 micrometers and it is doped with Arsenic at a concentration of 697850246124089376768 cm^-3. The drain region is of the material GaN with a length of 0.74 micrometers and it is doped with Arsenic at a concentration of 760509426521541574656 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.002)
(define Lgs 0.23)
(define Lgl 0.39)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.74)
(define Ld 0.74)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
134584169356934168576
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
461364960855811948544
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
697850246124089376768
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
760509426521541574656
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
798 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.29 micrometers and it is doped with Boron at a concentration of 430299910241075855360 cm^-3. The short gate region is of the material Germanium with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 874453986413970063360 cm^-3. The long gate region is of the material Germanium with a length of 0.77 micrometers and it is doped with Phosphorus at a concentration of 529324876550266683392 cm^-3. The drain region is of the material SiGe with a length of 0.29 micrometers and it is doped with Arsenic at a concentration of 563226664128183664640 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.002)
(define Lgs 0.92)
(define Lgl 0.77)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.29)
(define Ld 0.29)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
430299910241075855360
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
874453986413970063360
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
529324876550266683392
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
563226664128183664640
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
799 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.47 micrometers and it is doped with Boron at a concentration of 301657285983729614848 cm^-3. The short gate region is of the material Germanium with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 778548966455204249600 cm^-3. The long gate region is of the material SiGe with a length of 0.75 micrometers and it is doped with Phosphorus at a concentration of 361256595236120297472 cm^-3. The drain region is of the material Diamond with a length of 0.47 micrometers and it is doped with Arsenic at a concentration of 953220965419544739840 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.009)
(define Lgs 0.41)
(define Lgl 0.75)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.47)
(define Ld 0.47)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
301657285983729614848
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
778548966455204249600
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
361256595236120297472
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
953220965419544739840
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
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