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int64 0 2k | instruction stringlengths 945 985 | output stringlengths 5.12k 5.16k |
|---|---|---|
900 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.49 micrometers and it i... | (define tox 0.007)
(define Lgs 0.25)
(define Lgl 0.72)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.49)
(define Ld 0.49)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
901 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.74 micrometers and it i... | (define tox 0.005)
(define Lgs 0.88)
(define Lgl 0.35)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.74)
(define Ld 0.74)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
902 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.32 micrometers and it... | (define tox 0.004)
(define Lgs 0.1)
(define Lgl 0.85)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.32)
(define Ld 0.32)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
903 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.69 micrometers and it... | (define tox 0.005)
(define Lgs 0.7)
(define Lgl 0.7)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.69)
(define Ld 0.69)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
904 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.29 micrometers and it i... | (define tox 0.005)
(define Lgs 0.77)
(define Lgl 0.67)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.29)
(define Ld 0.29)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
905 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.97 micrometers and it... | (define tox 0.009)
(define Lgs 0.49)
(define Lgl 0.14)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.97)
(define Ld 0.97)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
906 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.8 micrometers and it is... | (define tox 0.009)
(define Lgs 0.56)
(define Lgl 0.85)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.8)
(define Ld 0.8)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
907 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.19 micrometers and it is d... | (define tox 0.01)
(define Lgs 0.91)
(define Lgl 0.38)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.19)
(define Ld 0.19)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
908 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.95 micrometers and it is d... | (define tox 0.006)
(define Lgs 0.08)
(define Lgl 0.07)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.95)
(define Ld 0.95)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
909 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.03 micrometers and it i... | (define tox 0.004)
(define Lgs 0.83)
(define Lgl 0.54)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.03)
(define Ld 0.03)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
910 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.46 micrometers and it is do... | (define tox 0.005)
(define Lgs 0.61)
(define Lgl 0.78)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.46)
(define Ld 0.46)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
911 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.38 micrometers and it i... | (define tox 0.002)
(define Lgs 0.79)
(define Lgl 0.78)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.38)
(define Ld 0.38)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
912 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.89 micrometers and it i... | (define tox 0.004)
(define Lgs 0.84)
(define Lgl 0.26)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.89)
(define Ld 0.89)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
913 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.72 micrometers and it i... | (define tox 0.007)
(define Lgs 0.74)
(define Lgl 0.66)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.72)
(define Ld 0.72)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
914 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.2 micrometers and it is... | (define tox 0.008)
(define Lgs 0.33)
(define Lgl 0.99)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.2)
(define Ld 0.2)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
915 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.83 micrometers and it i... | (define tox 0.003)
(define Lgs 0.19)
(define Lgl 0.36)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.83)
(define Ld 0.83)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
916 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.44 micrometers and it is d... | (define tox 0.003)
(define Lgs 0.66)
(define Lgl 0.38)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.44)
(define Ld 0.44)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
917 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.26 micrometers and it is d... | (define tox 0.005)
(define Lgs 0.79)
(define Lgl 0.42)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.26)
(define Ld 0.26)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
918 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.88 micrometers and it... | (define tox 0.007)
(define Lgs 0.43)
(define Lgl 0.89)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.88)
(define Ld 0.88)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
919 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.73 micrometers and it i... | (define tox 0.006)
(define Lgs 0.61)
(define Lgl 0.48)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.73)
(define Ld 0.73)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
920 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.04 micrometers and it... | (define tox 0.005)
(define Lgs 0.69)
(define Lgl 0.71)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.04)
(define Ld 0.04)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
921 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.2 micrometers and it is do... | (define tox 0.003)
(define Lgs 0.54)
(define Lgl 0.38)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.2)
(define Ld 0.2)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
922 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.46 micrometers and it is do... | (define tox 0.008)
(define Lgs 0.19)
(define Lgl 0.72)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.46)
(define Ld 0.46)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
923 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.65 micrometers and it... | (define tox 0.001)
(define Lgs 0.23)
(define Lgl 0.39)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.65)
(define Ld 0.65)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
924 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.84 micrometers and it is do... | (define tox 0.005)
(define Lgs 0.41)
(define Lgl 0.97)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.84)
(define Ld 0.84)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
925 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.53 micrometers and it... | (define tox 0.006)
(define Lgs 0.19)
(define Lgl 0.97)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.53)
(define Ld 0.53)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
926 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.25 micrometers and it is do... | (define tox 0.004)
(define Lgs 0.86)
(define Lgl 0.75)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.25)
(define Ld 0.25)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
927 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.54 micrometers and it... | (define tox 0.003)
(define Lgs 0.2)
(define Lgl 0.04)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.54)
(define Ld 0.54)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
928 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.89 micrometers and it i... | (define tox 0.002)
(define Lgs 0.13)
(define Lgl 0.55)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.89)
(define Ld 0.89)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
929 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.33 micrometers and it... | (define tox 0.007)
(define Lgs 0.64)
(define Lgl 0.5)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.33)
(define Ld 0.33)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
930 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.69 micrometers and it is d... | (define tox 0.007)
(define Lgs 0.29)
(define Lgl 0.83)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.69)
(define Ld 0.69)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
931 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.36 micrometers and it is d... | (define tox 0.005)
(define Lgs 0.4)
(define Lgl 0.56)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.36)
(define Ld 0.36)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
932 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.11 micrometers and it i... | (define tox 0.006)
(define Lgs 0.06)
(define Lgl 0.31)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.11)
(define Ld 0.11)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
933 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.5 micrometers and it is... | (define tox 0.009)
(define Lgs 0.17)
(define Lgl 0.64)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.5)
(define Ld 0.5)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
934 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.71 micrometers and it i... | (define tox 0.007)
(define Lgs 0.3)
(define Lgl 0.98)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.71)
(define Ld 0.71)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
935 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.43 micrometers and it is do... | (define tox 0.008)
(define Lgs 0.91)
(define Lgl 0.47)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.43)
(define Ld 0.43)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
936 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.58 micrometers and it is d... | (define tox 0.008)
(define Lgs 0.92)
(define Lgl 0.37)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.58)
(define Ld 0.58)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
937 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.76 micrometers and it... | (define tox 0.005)
(define Lgs 0.73)
(define Lgl 0.29)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.76)
(define Ld 0.76)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
938 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.56 micrometers and it is d... | (define tox 0.002)
(define Lgs 0.52)
(define Lgl 0.05)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.56)
(define Ld 0.56)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
939 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.78 micrometers and it is d... | (define tox 0.006)
(define Lgs 0.73)
(define Lgl 0.73)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.78)
(define Ld 0.78)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
940 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.68 micrometers and it is d... | (define tox 0.006)
(define Lgs 0.61)
(define Lgl 0.36)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.68)
(define Ld 0.68)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
941 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.43 micrometers and it... | (define tox 0.003)
(define Lgs 0.1)
(define Lgl 0.48)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.43)
(define Ld 0.43)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
942 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.22 micrometers and it i... | (define tox 0.006)
(define Lgs 0.24)
(define Lgl 0.41)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.22)
(define Ld 0.22)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
943 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.73 micrometers and it... | (define tox 0.009)
(define Lgs 1.0)
(define Lgl 0.5)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.73)
(define Ld 0.73)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
944 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.16 micrometers and it is do... | (define tox 0.002)
(define Lgs 0.81)
(define Lgl 0.83)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.16)
(define Ld 0.16)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
945 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.87 micrometers and it is d... | (define tox 0.007)
(define Lgs 0.64)
(define Lgl 0.92)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.87)
(define Ld 0.87)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
946 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.65 micrometers and it is d... | (define tox 0.007)
(define Lgs 0.26)
(define Lgl 0.01)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.65)
(define Ld 0.65)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
947 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.16 micrometers and it is do... | (define tox 0.006)
(define Lgs 0.93)
(define Lgl 0.8)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.16)
(define Ld 0.16)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
948 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.54 micrometers and it is do... | (define tox 0.01)
(define Lgs 0.81)
(define Lgl 0.85)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.54)
(define Ld 0.54)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGat... |
949 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.36 micrometers and it i... | (define tox 0.006)
(define Lgs 0.04)
(define Lgl 0.01)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.36)
(define Ld 0.36)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
950 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.51 micrometers and it is d... | (define tox 0.002)
(define Lgs 0.6)
(define Lgl 0.09)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.51)
(define Ld 0.51)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGat... |
951 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.88 micrometers and it i... | (define tox 0.005)
(define Lgs 0.09)
(define Lgl 0.54)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.88)
(define Ld 0.88)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
952 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.25 micrometers and it i... | (define tox 0.008)
(define Lgs 0.55)
(define Lgl 0.91)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.25)
(define Ld 0.25)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
953 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.83 micrometers and it is do... | (define tox 0.007)
(define Lgs 0.12)
(define Lgl 0.33)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.83)
(define Ld 0.83)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
954 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.24 micrometers and it i... | (define tox 0.008)
(define Lgs 0.51)
(define Lgl 0.1)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.24)
(define Ld 0.24)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
955 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.82 micrometers and it is do... | (define tox 0.006)
(define Lgs 0.54)
(define Lgl 0.72)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.82)
(define Ld 0.82)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
956 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.61 micrometers and it i... | (define tox 0.003)
(define Lgs 0.59)
(define Lgl 0.42)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.61)
(define Ld 0.61)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
957 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.95 micrometers and it i... | (define tox 0.006)
(define Lgs 0.62)
(define Lgl 0.23)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.95)
(define Ld 0.95)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
958 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.71 micrometers and it... | (define tox 0.007)
(define Lgs 0.55)
(define Lgl 0.78)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.71)
(define Ld 0.71)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
959 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.18 micrometers and it is d... | (define tox 0.007)
(define Lgs 0.8)
(define Lgl 0.54)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.18)
(define Ld 0.18)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
960 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.98 micrometers and it i... | (define tox 0.008)
(define Lgs 0.37)
(define Lgl 0.41)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.98)
(define Ld 0.98)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
961 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.03 micrometers and it i... | (define tox 0.006)
(define Lgs 0.87)
(define Lgl 0.43)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.03)
(define Ld 0.03)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
962 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.13 micrometers and it is do... | (define tox 0.002)
(define Lgs 0.3)
(define Lgl 0.74)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.13)
(define Ld 0.13)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
963 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.08 micrometers and it is d... | (define tox 0.003)
(define Lgs 0.29)
(define Lgl 0.52)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.08)
(define Ld 0.08)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
964 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.93 micrometers and it is d... | (define tox 0.002)
(define Lgs 0.26)
(define Lgl 0.2)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.93)
(define Ld 0.93)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGat... |
965 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.28 micrometers and it... | (define tox 0.003)
(define Lgs 0.03)
(define Lgl 0.82)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.28)
(define Ld 0.28)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
966 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.29 micrometers and it... | (define tox 0.005)
(define Lgs 0.57)
(define Lgl 0.7)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.29)
(define Ld 0.29)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
967 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.48 micrometers and it i... | (define tox 0.005)
(define Lgs 0.35)
(define Lgl 0.71)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.48)
(define Ld 0.48)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
968 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.2 micrometers and it is... | (define tox 0.006)
(define Lgs 0.51)
(define Lgl 0.66)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.2)
(define Ld 0.2)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
969 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.27 micrometers and it i... | (define tox 0.005)
(define Lgs 0.18)
(define Lgl 0.25)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.27)
(define Ld 0.27)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
970 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.48 micrometers and it i... | (define tox 0.005)
(define Lgs 0.08)
(define Lgl 0.62)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.48)
(define Ld 0.48)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
971 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.54 micrometers and it is d... | (define tox 0.004)
(define Lgs 0.86)
(define Lgl 0.25)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.54)
(define Ld 0.54)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
972 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.99 micrometers and it i... | (define tox 0.004)
(define Lgs 0.43)
(define Lgl 0.93)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.99)
(define Ld 0.99)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
973 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.97 micrometers and it is do... | (define tox 0.002)
(define Lgs 0.51)
(define Lgl 0.1)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.97)
(define Ld 0.97)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
974 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.88 micrometers and it is d... | (define tox 0.004)
(define Lgs 0.12)
(define Lgl 0.56)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.88)
(define Ld 0.88)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
975 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.88 micrometers and it is d... | (define tox 0.008)
(define Lgs 0.98)
(define Lgl 0.71)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.88)
(define Ld 0.88)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
976 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.11 micrometers and it i... | (define tox 0.006)
(define Lgs 0.43)
(define Lgl 0.69)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.11)
(define Ld 0.11)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
977 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.79 micrometers and it i... | (define tox 0.006)
(define Lgs 0.4)
(define Lgl 0.05)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.79)
(define Ld 0.79)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
978 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.45 micrometers and it i... | (define tox 0.002)
(define Lgs 0.06)
(define Lgl 0.28)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.45)
(define Ld 0.45)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
979 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.86 micrometers and it i... | (define tox 0.004)
(define Lgs 0.19)
(define Lgl 0.17)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.86)
(define Ld 0.86)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
980 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.91 micrometers and it... | (define tox 0.003)
(define Lgs 0.66)
(define Lgl 0.4)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.91)
(define Ld 0.91)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
981 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.47 micrometers and it... | (define tox 0.008)
(define Lgs 0.77)
(define Lgl 0.84)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.47)
(define Ld 0.47)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
982 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.56 micrometers and it... | (define tox 0.009)
(define Lgs 0.81)
(define Lgl 0.55)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.56)
(define Ld 0.56)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
983 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.39 micrometers and it is do... | (define tox 0.004)
(define Lgs 0.29)
(define Lgl 0.82)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.39)
(define Ld 0.39)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
984 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.47 micrometers and it is d... | (define tox 0.005)
(define Lgs 0.55)
(define Lgl 0.56)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.47)
(define Ld 0.47)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
985 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.96 micrometers and it is d... | (define tox 0.002)
(define Lgs 0.05)
(define Lgl 0.79)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.96)
(define Ld 0.96)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
986 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.85 micrometers and it is do... | (define tox 0.008)
(define Lgs 0.11)
(define Lgl 0.87)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.85)
(define Ld 0.85)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
987 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.68 micrometers and it... | (define tox 0.01)
(define Lgs 0.33)
(define Lgl 0.11)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.68)
(define Ld 0.68)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
988 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.72 micrometers and it is d... | (define tox 0.008)
(define Lgs 0.72)
(define Lgl 0.59)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.72)
(define Ld 0.72)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
989 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.63 micrometers and it i... | (define tox 0.01)
(define Lgs 0.47)
(define Lgl 0.33)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.63)
(define Ld 0.63)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
990 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.01 micrometers and it... | (define tox 0.006)
(define Lgs 0.83)
(define Lgl 0.96)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.01)
(define Ld 0.01)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
991 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.53 micrometers and it is d... | (define tox 0.004)
(define Lgs 0.29)
(define Lgl 0.55)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.53)
(define Ld 0.53)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
992 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.4 micrometers and it is do... | (define tox 0.004)
(define Lgs 0.56)
(define Lgl 0.27)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.4)
(define Ld 0.4)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGate... |
993 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.54 micrometers and it... | (define tox 0.002)
(define Lgs 0.49)
(define Lgl 0.54)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.54)
(define Ld 0.54)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
994 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.18 micrometers and it i... | (define tox 0.008)
(define Lgs 0.91)
(define Lgl 0.95)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.18)
(define Ld 0.18)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
995 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.71 micrometers and it i... | (define tox 0.005)
(define Lgs 0.62)
(define Lgl 0.27)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.71)
(define Ld 0.71)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
996 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.85 micrometers and it i... | (define tox 0.005)
(define Lgs 0.52)
(define Lgl 0.51)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.85)
(define Ld 0.85)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
997 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.75 micrometers and it is do... | (define tox 0.008)
(define Lgs 0.57)
(define Lgl 0.39)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.75)
(define Ld 0.75)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
998 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.62 micrometers and it i... | (define tox 0.002)
(define Lgs 0.66)
(define Lgl 0.24)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.62)
(define Ld 0.62)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
999 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.57 micrometers and it is d... | (define tox 0.002)
(define Lgs 0.69)
(define Lgl 0.55)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.57)
(define Ld 0.57)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
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