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We are having trouble with our Denton Sputter System. In the past, we were
able to use it to sputter metals, Silicon, SiO2, Cu, Nickel and Chromium.
Currently, we are unable to sputter anything using our DC power supply. The
voltage sits around 500V, but no current, and it does not create a plasma,
using an Aluminum target. In addition, we have melted the insulator rings,
had them rebuilt and then melted them a second time once they were returned.
We are beating our heads against the wall with this problem. Since the guns
have been rebuilt, we have noticed a higher reflected power for RF (~10-12%
for copper targets) and the deposition rate for Silicon has gone way down.
Any advice would be most appreciated.
Thanks
Neil
Neil Peters
Process Lab Engineer
Department of Chemical and Materials Engineering
http://www.engr.sjsu.edu/cme
San Jose State University voice: (408) 924-3967
One Washington Square fax: (408) 924-4057
San Jose, CA 95192-0082
E-mail: npeters at email.sjsu.edu
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From dan at engr.wisc.edu Fri Apr 25 09:28:21 2008
From: dan at engr.wisc.edu (Daniel Christensen)
Date: Fri, 25 Apr 2008 08:28:21 -0500
Subject: [labnetwork] Sputtering Problems
In-Reply-To: <006201c8a57d$8ead8290$50984182@ZAD>
References: <006201c8a57d$8ead8290$50984182@ZAD>
Message-ID: <7.0.1.0.2.20080425082056.02b38938@engr.wisc.edu>
Neil,
A couple of thoughts:
- when you rebuilt the cathode did you change the magnets? we have
found in some cathodes, the magnets are exposed to the cooling water
and degrade over time, changing them can help. Also check that the
polarity of the magnets is correct.
- Have you tried to strike the plasma by increasing the pressure for
a short period of time to get a plasma and then dropping it to the
normal pressure.
- have you put an ohmmeter from the input cathode wire to the face of
the cathode... with bad DC and more reflected on RF maybe its a bad
connection interior to the cathode, etc.
Good luck.
At 11:04 AM 4/24/2008, Neil Peters wrote:
>Hi
>
>We are having trouble with our Denton Sputter System. In the past,
>we were able to use it to sputter metals, Silicon, SiO2, Cu, Nickel
>and Chromium. Currently, we are unable to sputter anything using
>our DC power supply. The voltage sits around 500V, but no current,
>and it does not create a plasma, using an Aluminum target. In
>addition, we have melted the insulator rings, had them rebuilt and
>then melted them a second time once they were returned. We are
>beating our heads against the wall with this problem. Since the
>guns have been rebuilt, we have noticed a higher reflected power for
>RF (~10-12% for copper targets) and the deposition rate for Silicon
>has gone way down.
>
>Any advice would be most appreciated.
>
>Thanks
>Neil
>
>
>
>Neil Peters
>Process Lab Engineer
>Department of Chemical and Materials Engineering
><http://www.engr.sjsu.edu/cme>http://www.engr.sjsu.edu/cme
>San Jose State University voice: (408) 924-3967
>One Washington Square fax: (408) 924-4057
>San Jose, CA 95192-0082
>E-mail: npeters at email.sjsu.edu
>
>_______________________________________________
>labnetwork mailing list
>labnetwork at mtl.mit.edu
>https://www-mtl.mit.edu/mailman/listinfo.cgi/labnetwork
Daniel C. Christensen
dan at engr.wisc.edu
Univ of WI-Madison
(608) 262-6877
FAX (608) 265-2614
From ychen98 at mail.gatech.edu Fri Apr 25 23:25:42 2008
From: ychen98 at mail.gatech.edu (ychen98 at mail.gatech.edu)
Date: Fri, 25 Apr 2008 23:25:42 -0400
Subject: [labnetwork] For removal of e-beam resist HSQ
Message-ID: <1209180342.4812a0b683d7a@webmail.mail.gatech.edu>
Hi,
We are using negative e-beam resist HSQ to pattern silicon waveguides on SOI
wafers by EBL and ICP in chlorine plasma. We got difficulty in removal of the
resist after dry etching. By literature, it is a compound of silicon and
oxygen, but we were not able to get rid of it even by dipping the samples into
BOE(6:1) for 15mins which led to the detachness of the silicon waveguides due
to huge undercut in BOX.
Any advice would be most appreciated.
Regards
Yao
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