task stringclasses 3
values | input unknown | output unknown |
|---|---|---|
explain | {
"result": "BO recommendation",
"record": "SYN-00266"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 1.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00267: phosphoric acid 2.8wt%, + 5-methylbenzotriazole 1.87%, 25C/60s. etch 455.6 nm/min." | {
"record_id": "SYN-00267",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 2.8,
"unit": "wt%"
}
},
... |
normalize | "5-methylbenzotriazole ; \"mol/L\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00267"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 2.8wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00268: phosphoric acid 13.2weight percent, + EDTA 1.1%, 50C/60s. etch 232.6 nm/min." | {
"record_id": "SYN-00268",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 13.2,
"unit": "wt%"
}
},... |
normalize | "EDTA ; \"mol/L\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00268"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 13.2wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00269: acetic acid 15.5wt%, + EDTA 1.31%, 30C/60s. etch 136.9 nm/min." | {
"record_id": "SYN-00269",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 15.5,
"unit": "wt%"
}
},
{... |
normalize | "EDTA ; \"mol/L\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00269"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 15.5wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00270: acetic acid 21.7weight percent, + benzotriazole 0.1%, 50C/120s. etch 405.1 nm/min." | {
"record_id": "SYN-00270",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 21.7,
"unit": "wt%"
}
},
{
... |
normalize | "benzotriazole ; \"molar\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00270"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 21.7wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00271: acetic acid 6.4%w/w, + tetrazole 1.19%, 25C/120s. etch 178.5 nm/min." | {
"record_id": "SYN-00271",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 6.4,
"unit": "wt%"
}
},
{
... |
normalize | "tetrazole ; \"mol/L\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00271"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 6.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00272: acetic acid 10.2%w/w, + 5-methylbenzotriazole 0.91%, 30C/60s. etch 391.5 nm/min." | {
"record_id": "SYN-00272",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 10.2,
"unit": "wt%"
}
},
{
... |
normalize | "5-methylbenzotriazole ; \"M\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00272"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 10.2wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00273: hydrogen peroxide 8.7wt%, + imidazole 1.64%, 25C/60s. etch 447.2 nm/min." | {
"record_id": "SYN-00273",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 8.7,
"unit": "wt%"
}
},
{
... |
normalize | "imidazole ; \"M\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00273"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 8.7wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00274: hydrogen peroxide 3.3wt%, + tetrazole 1.07%, 30C/120s. etch 233.8 nm/min." | {
"record_id": "SYN-00274",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 3.3,
"unit": "wt%"
}
},
{
... |
normalize | "tetrazole ; \"mol/L\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00274"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 3.3wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00275: phosphoric acid 4.0%w/w, + benzotriazole 0.25%, 25C/60s. etch 329.0 nm/min." | {
"record_id": "SYN-00275",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 4,
"unit": "wt%"
}
},
... |
normalize | "benzotriazole ; \"mol/L\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00275"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 4.0wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00276: phosphoric acid 7.2wt%, + tetrazole 0.86%, 40C/60s. etch 216.5 nm/min." | {
"record_id": "SYN-00276",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 7.2,
"unit": "wt%"
}
},
... |
normalize | "tetrazole ; \"mol/L\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00276"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 7.2wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00277: acetic acid 3.1wt%, + 5-methylbenzotriazole 0.32%, 40C/60s. etch 146.4 nm/min." | {
"record_id": "SYN-00277",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 3.1,
"unit": "wt%"
}
},
{
... |
normalize | "5-methylbenzotriazole ; \"molar\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00277"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 3.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00278: phosphoric acid 5.5weight percent, + 5-methylbenzotriazole 1.1%, 50C/120s. etch 159.7 nm/min." | {
"record_id": "SYN-00278",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 5.5,
"unit": "wt%"
}
},
... |
normalize | "5-methylbenzotriazole ; \"molar\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00278"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 5.5wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00279: acetic acid 12.0%w/w, + benzotriazole 1.53%, 40C/60s. etch 428.1 nm/min." | {
"record_id": "SYN-00279",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 12,
"unit": "wt%"
}
},
{
... |
normalize | "benzotriazole ; \"M\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00279"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 12.0wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00280: hydrogen peroxide 14.8%w/w, + EDTA 0.52%, 40C/120s. etch 53.8 nm/min." | {
"record_id": "SYN-00280",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 14.8,
"unit": "wt%"
}
},
... |
normalize | "EDTA ; \"M\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00280"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 14.8wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00281: acetic acid 27.7wt%, + 5-methylbenzotriazole 0.34%, 25C/60s. etch 304.1 nm/min." | {
"record_id": "SYN-00281",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 27.7,
"unit": "wt%"
}
},
{... |
normalize | "5-methylbenzotriazole ; \"molar\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00281"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 27.7wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00282: phosphoric acid 16.4wt%, + tetrazole 1.42%, 40C/120s. etch 88.1 nm/min." | {
"record_id": "SYN-00282",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 16.4,
"unit": "wt%"
}
... |
normalize | "tetrazole ; \"molar\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00282"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 16.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00283: hydrogen peroxide 16.1%w/w, + 5-methylbenzotriazole 1.81%, 40C/120s. etch 368.1 nm/min." | {
"record_id": "SYN-00283",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 16.1,
"unit": "wt%"
}
},
{... |
normalize | "5-methylbenzotriazole ; \"mol/L\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00283"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 16.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00284: phosphoric acid 5.1wt%, + tetrazole 0.39%, 30C/30s. etch 33.5 nm/min." | {
"record_id": "SYN-00284",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 5.1,
"unit": "wt%"
}
... |
normalize | "tetrazole ; \"M\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00284"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 5.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00285: phosphoric acid 7.9%w/w, + 5-methylbenzotriazole 1.12%, 50C/60s. etch 295.3 nm/min." | {
"record_id": "SYN-00285",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 7.9,
"unit": "wt%"
}
... |
normalize | "5-methylbenzotriazole ; \"mol/L\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00285"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 7.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00286: phosphoric acid 20.8wt%, + benzotriazole 1.84%, 40C/30s. etch 250.7 nm/min." | {
"record_id": "SYN-00286",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 20.8,
"unit": "wt%"
}
},... |
normalize | "benzotriazole ; \"M\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00286"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 20.8wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00287: phosphoric acid 17.3weight percent, + EDTA 1.15%, 50C/60s. etch 159.4 nm/min." | {
"record_id": "SYN-00287",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 17.3,
"unit": "wt%"
}
},... |
normalize | "EDTA ; \"M\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00287"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 17.3wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00288: acetic acid 15.0weight percent, + benzotriazole 0.32%, 25C/120s. etch 425.1 nm/min." | {
"record_id": "SYN-00288",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 15,
"unit": "wt%"
}
},
{
... |
normalize | "benzotriazole ; \"mol/L\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00288"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 15.0wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00289: acetic acid 20.6weight percent, + 5-methylbenzotriazole 1.53%, 30C/60s. etch 477.8 nm/min." | {
"record_id": "SYN-00289",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 20.6,
"unit": "wt%"
}
},
{... |
normalize | "5-methylbenzotriazole ; \"mol/L\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00289"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 20.6wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00290: hydrogen peroxide 2.1%w/w, + tetrazole 1.49%, 25C/60s. etch 369.2 nm/min." | {
"record_id": "SYN-00290",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 2.1,
"unit": "wt%"
}
},
{
... |
normalize | "tetrazole ; \"M\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00290"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 2.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00291: phosphoric acid 23.5%w/w, + imidazole 0.93%, 50C/60s. etch 165.5 nm/min." | {
"record_id": "SYN-00291",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 23.5,
"unit": "wt%"
}
},
... |
normalize | "imidazole ; \"mol/L\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00291"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 23.5wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00292: phosphoric acid 29.8%w/w, + imidazole 1.52%, 25C/30s. etch 420.5 nm/min." | {
"record_id": "SYN-00292",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 29.8,
"unit": "wt%"
}
},
... |
normalize | "imidazole ; \"molar\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00292"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 29.8wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00293: acetic acid 14.8%w/w, + 5-methylbenzotriazole 1.9%, 30C/120s. etch 470.5 nm/min." | {
"record_id": "SYN-00293",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 14.8,
"unit": "wt%"
}
},
{... |
normalize | "5-methylbenzotriazole ; \"M\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00293"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 14.8wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00294: acetic acid 15.1%w/w, + 5-methylbenzotriazole 0.99%, 30C/60s. etch 484.3 nm/min." | {
"record_id": "SYN-00294",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 15.1,
"unit": "wt%"
}
},
{
... |
normalize | "5-methylbenzotriazole ; \"molar\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00294"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 15.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00295: hydrogen peroxide 5.0%w/w, + benzotriazole 1.15%, 40C/60s. etch 50.8 nm/min." | {
"record_id": "SYN-00295",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 5,
"unit": "wt%"
}
},
{
... |
normalize | "benzotriazole ; \"M\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00295"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 5.0wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00296: acetic acid 17.5%w/w, + 5-methylbenzotriazole 1.23%, 25C/30s. etch 209.8 nm/min." | {
"record_id": "SYN-00296",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 17.5,
"unit": "wt%"
}
},
{
... |
normalize | "5-methylbenzotriazole ; \"M\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00296"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 17.5wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00297: hydrogen peroxide 24.0wt%, + imidazole 0.68%, 50C/120s. etch 168.7 nm/min." | {
"record_id": "SYN-00297",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 24,
"unit": "wt%"
}
},
{
... |
normalize | "imidazole ; \"mol/L\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00297"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 24.0wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00298: phosphoric acid 27.9wt%, + 5-methylbenzotriazole 1.2%, 40C/30s. etch 241.4 nm/min." | {
"record_id": "SYN-00298",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 27.9,
"unit": "wt%"
}
},
... |
normalize | "5-methylbenzotriazole ; \"mol/L\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00298"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 27.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00299: phosphoric acid 17.2weight percent, + 5-methylbenzotriazole 1.89%, 25C/120s. etch 313.1 nm/min." | {
"record_id": "SYN-00299",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 17.2,
"unit": "wt%"
}
... |
normalize | "5-methylbenzotriazole ; \"molar\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00299"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 17.2wt%, vary inhibitor +/-0.2wt%." |
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