task stringclasses 3
values | input unknown | output unknown |
|---|---|---|
normalize | "imidazole ; \"mol/L\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00233"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 21.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00234: hydrogen peroxide 25.6%w/w, + imidazole 0.85%, 25C/30s. etch 279.3 nm/min." | {
"record_id": "SYN-00234",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 25.6,
"unit": "wt%"
}
},
{
... |
normalize | "imidazole ; \"molar\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00234"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 25.6wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00235: phosphoric acid 12.4wt%, + tetrazole 1.46%, 50C/30s. etch 338.0 nm/min." | {
"record_id": "SYN-00235",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 12.4,
"unit": "wt%"
}
... |
normalize | "tetrazole ; \"molar\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00235"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 12.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00236: acetic acid 29.1weight percent, + imidazole 0.05%, 40C/60s. etch 226.7 nm/min." | {
"record_id": "SYN-00236",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 29.1,
"unit": "wt%"
}
},
{... |
normalize | "imidazole ; \"mol/L\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00236"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 29.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00237: acetic acid 12.6wt%, + 5-methylbenzotriazole 0.25%, 25C/60s. etch 362.6 nm/min." | {
"record_id": "SYN-00237",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 12.6,
"unit": "wt%"
}
},
{
... |
normalize | "5-methylbenzotriazole ; \"M\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00237"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 12.6wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00238: acetic acid 22.5%w/w, + EDTA 0.53%, 25C/120s. etch 83.1 nm/min." | {
"record_id": "SYN-00238",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 22.5,
"unit": "wt%"
}
},
{
... |
normalize | "EDTA ; \"M\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00238"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 22.5wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00239: phosphoric acid 17.3weight percent, + EDTA 0.08%, 25C/30s. etch 155.6 nm/min." | {
"record_id": "SYN-00239",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 17.3,
"unit": "wt%"
}
... |
normalize | "EDTA ; \"M\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00239"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 17.3wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00240: phosphoric acid 17.2weight percent, + EDTA 0.77%, 50C/120s. etch 403.3 nm/min." | {
"record_id": "SYN-00240",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 17.2,
"unit": "wt%"
}
},... |
normalize | "EDTA ; \"mol/L\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00240"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 17.2wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00241: acetic acid 19.2wt%, + imidazole 1.54%, 50C/120s. etch 359.2 nm/min." | {
"record_id": "SYN-00241",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 19.2,
"unit": "wt%"
}
},
{
... |
normalize | "imidazole ; \"mol/L\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00241"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 19.2wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00242: phosphoric acid 14.8wt%, + benzotriazole 1.59%, 40C/120s. etch 124.4 nm/min." | {
"record_id": "SYN-00242",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 14.8,
"unit": "wt%"
}
},
... |
normalize | "benzotriazole ; \"M\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00242"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 14.8wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00243: phosphoric acid 17.0wt%, + EDTA 0.11%, 50C/60s. etch 396.2 nm/min." | {
"record_id": "SYN-00243",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 17,
"unit": "wt%"
}
},
... |
normalize | "EDTA ; \"M\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00243"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 17.0wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00244: phosphoric acid 3.5%w/w, + 5-methylbenzotriazole 1.06%, 50C/120s. etch 140.2 nm/min." | {
"record_id": "SYN-00244",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 3.5,
"unit": "wt%"
}
},
... |
normalize | "5-methylbenzotriazole ; \"mol/L\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00244"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 3.5wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00245: acetic acid 18.9weight percent, + benzotriazole 1.67%, 50C/60s. etch 352.3 nm/min." | {
"record_id": "SYN-00245",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 18.9,
"unit": "wt%"
}
},
{... |
normalize | "benzotriazole ; \"mol/L\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00245"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 18.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00246: acetic acid 23.7weight percent, + tetrazole 1.41%, 30C/60s. etch 242.9 nm/min." | {
"record_id": "SYN-00246",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 23.7,
"unit": "wt%"
}
},
{
... |
normalize | "tetrazole ; \"molar\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00246"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 23.7wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00247: phosphoric acid 20.6%w/w, + 5-methylbenzotriazole 0.89%, 50C/120s. etch 459.8 nm/min." | {
"record_id": "SYN-00247",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 20.6,
"unit": "wt%"
}
},
... |
normalize | "5-methylbenzotriazole ; \"molar\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00247"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 20.6wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00248: phosphoric acid 11.7wt%, + tetrazole 0.87%, 30C/60s. etch 19.6 nm/min." | {
"record_id": "SYN-00248",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 11.7,
"unit": "wt%"
}
},... |
normalize | "tetrazole ; \"mol/L\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00248"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 11.7wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00249: hydrogen peroxide 19.1wt%, + tetrazole 0.35%, 50C/30s. etch 388.1 nm/min." | {
"record_id": "SYN-00249",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 19.1,
"unit": "wt%"
}
},
... |
normalize | "tetrazole ; \"M\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00249"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 19.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00250: acetic acid 13.7wt%, + EDTA 0.89%, 40C/60s. etch 220.8 nm/min." | {
"record_id": "SYN-00250",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 13.7,
"unit": "wt%"
}
},
{
... |
normalize | "EDTA ; \"molar\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00250"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 13.7wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00251: hydrogen peroxide 9.2wt%, + tetrazole 1.61%, 40C/60s. etch 17.1 nm/min." | {
"record_id": "SYN-00251",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 9.2,
"unit": "wt%"
}
},
{
... |
normalize | "tetrazole ; \"molar\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00251"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 9.2wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00252: acetic acid 28.0wt%, + imidazole 0.94%, 40C/120s. etch 463.8 nm/min." | {
"record_id": "SYN-00252",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 28,
"unit": "wt%"
}
},
{
... |
normalize | "imidazole ; \"mol/L\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00252"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 28.0wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00253: hydrogen peroxide 2.7wt%, + imidazole 0.11%, 25C/30s. etch 437.6 nm/min." | {
"record_id": "SYN-00253",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 2.7,
"unit": "wt%"
}
},
{
... |
normalize | "imidazole ; \"M\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00253"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 2.7wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00254: acetic acid 24.1weight percent, + EDTA 0.2%, 25C/120s. etch 388.8 nm/min." | {
"record_id": "SYN-00254",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 24.1,
"unit": "wt%"
}
},
{... |
normalize | "EDTA ; \"M\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00254"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 24.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00255: hydrogen peroxide 25.9wt%, + tetrazole 1.98%, 30C/120s. etch 51.8 nm/min." | {
"record_id": "SYN-00255",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 25.9,
"unit": "wt%"
}
},
{... |
normalize | "tetrazole ; \"M\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00255"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 25.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00256: acetic acid 22.2%w/w, + EDTA 1.13%, 25C/120s. etch 395.8 nm/min." | {
"record_id": "SYN-00256",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 22.2,
"unit": "wt%"
}
},
{... |
normalize | "EDTA ; \"molar\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00256"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 22.2wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00257: acetic acid 27.4weight percent, + EDTA 0.52%, 25C/30s. etch 302.9 nm/min." | {
"record_id": "SYN-00257",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 27.4,
"unit": "wt%"
}
},
{
... |
normalize | "EDTA ; \"molar\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00257"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 27.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00258: phosphoric acid 1.0%w/w, + benzotriazole 0.55%, 30C/120s. etch 451.7 nm/min." | {
"record_id": "SYN-00258",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 1,
"unit": "wt%"
}
},... |
normalize | "benzotriazole ; \"M\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00258"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 1.0wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00259: phosphoric acid 26.3wt%, + imidazole 0.39%, 40C/120s. etch 162.4 nm/min." | {
"record_id": "SYN-00259",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 26.3,
"unit": "wt%"
}
... |
normalize | "imidazole ; \"molar\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00259"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 26.3wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00260: phosphoric acid 19.4weight percent, + imidazole 1.25%, 30C/60s. etch 399.8 nm/min." | {
"record_id": "SYN-00260",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 19.4,
"unit": "wt%"
}
... |
normalize | "imidazole ; \"molar\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00260"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 19.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00261: phosphoric acid 10.6weight percent, + benzotriazole 0.82%, 50C/120s. etch 135.8 nm/min." | {
"record_id": "SYN-00261",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 10.6,
"unit": "wt%"
}
},... |
normalize | "benzotriazole ; \"molar\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00261"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 10.6wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00262: hydrogen peroxide 13.1wt%, + imidazole 1.56%, 40C/30s. etch 328.2 nm/min." | {
"record_id": "SYN-00262",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 13.1,
"unit": "wt%"
}
},
{... |
normalize | "imidazole ; \"mol/L\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00262"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 13.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00263: phosphoric acid 4.3%w/w, + EDTA 1.02%, 25C/60s. etch 143.3 nm/min." | {
"record_id": "SYN-00263",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 4.3,
"unit": "wt%"
}
},
... |
normalize | "EDTA ; \"M\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00263"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 4.3wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00264: phosphoric acid 7.8%w/w, + 5-methylbenzotriazole 1.12%, 30C/30s. etch 321.8 nm/min." | {
"record_id": "SYN-00264",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 7.8,
"unit": "wt%"
}
},
... |
normalize | "5-methylbenzotriazole ; \"molar\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00264"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 7.8wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00265: phosphoric acid 28.9wt%, + EDTA 1.93%, 40C/60s. etch 59.4 nm/min." | {
"record_id": "SYN-00265",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 28.9,
"unit": "wt%"
}
},... |
normalize | "EDTA ; \"molar\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00265"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 28.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00266: acetic acid 1.4weight percent, + tetrazole 1.74%, 30C/120s. etch 374.4 nm/min." | {
"record_id": "SYN-00266",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 1.4,
"unit": "wt%"
}
},
{
... |
normalize | "tetrazole ; \"mol/L\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
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