publicationDate stringlengths 10 10 | title stringlengths 17 233 | abstract stringlengths 20 3.22k | id stringlengths 9 12 |
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2021-06-05 | On the anomalous low-resistance state and exceptional Hall component in hard-magnetic Weyl nanoflakes | Magnetic topological materials, which combine magnetism and topology, are
expected to host emerging topological states and exotic quantum phenomena. In
this study, with the aid of greatly enhanced coercive fields in high-quality
nanoflakes of the magnetic Weyl semimetal Co3Sn2S2, we investigate anomalous
electronic tra... | 2106.02906v1 |
2023-08-30 | Chemical heterogeneity enhances hydrogen resistance in high-strength steels | When H, the lightest, smallest and most abundant atom in the universe, makes
its way into a high-strength alloy (>650 MPa), the material's load-bearing
capacity is abruptly lost. This phenomenon, known as H embrittlement, was
responsible for the catastrophic and unpredictable failure of large engineering
structures in ... | 2308.16048v1 |
2021-01-29 | Novel design strategies for modulating conductive stretchable system response based on periodic assemblies | Soft electronics have recently gathered considerable interest thanks to their
bio-mechanical compatibility. An important feature of such deformable
conductors is their electrical response to strain. While development of
stretchable materials with high gauge factors has attracted considerable
attention, there is a growi... | 2101.12600v1 |
2009-03-07 | Correlation between resistance fluctuations and temperature dependence of conductivity in graphene | The weak temperature dependence of the resistance R(T) of monolayer
graphene1-3 indicates an extraordinarily high intrinsic mobility of the charge
carriers. Important complications are the presence of mobile scattering centres
that strongly modify charge transport, and the presence of strong mesoscopic
conductance fluc... | 0903.1334v1 |
2021-04-20 | Accelerated Discovery of Molten Salt Corrosion-resistant Alloy by High-throughput Experimental and Modeling Methods Coupled to Data Analytics | Insufficient availability of molten salt corrosion-resistant alloys severely
limits the fruition of a variety of promising molten salt technologies that
could otherwise have significant societal impacts. To accelerate alloy
development for molten salt applications and develop fundamental understanding
of corrosion in t... | 2104.10235v1 |
2014-12-05 | Resistance switching devices based on amorphous insulator-metal thin films | Nanometallic devices based on amorphous insulator-metal thin films are
developed to provide a novel non-volatile resistance-switching random-access
memory (RRAM). In these devices, data recording is controlled by a bipolar
voltage, which tunes electron localization length, thus resistivity, through
electron trapping/de... | 1412.2083v1 |
2003-11-05 | Thermoelectric power of Bi and Bi(1-x)Te(x), x=0.0014,in porous Vycor glass | Semiconductor quantum wires constitute a promising thermoelectric material
because of the increase of the electronic density of states in low-dimensional
materials. We studied the magnetic-field-dependent resistance and Seebeck
coefficient of a high-density network of 6-nm-diameter wires of Bi and of
Bi(1-x)Te(x), x=0.... | 0311112v1 |
2009-06-27 | Resistive switching in nanogap systems on SiO2 substrates | Voltage-controlled resistive switching is demonstrated in various gap systems
on SiO2 substrate. The nanosized gaps are made by different means using
different materials including metal, semiconductor, and metallic nonmetal. The
switching site is further reduced by using multi-walled carbon nanotubes and
single-walled ... | 0906.5100v1 |
2010-02-12 | Experimental Study of Resistive Bistability in Metal Oxide Junctions | We have studied resistive bistability (memory) effects in junctions based on
metal oxides, with a focus on sample-to-sample reproducibility which is
necessary for the use of such junctions as crosspoint devices of hybrid
CMOS/nanoelectronic circuits. Few-nm-thick layers of NbOx, CuOx and TiOx have
been formed by therma... | 1002.2650v1 |
2018-03-30 | Reliability assessment in advanced nanocomposite materials for orthopaedic applications | Alumina-zirconia nano-composites were recently developed as alternative
bearing materials for orthopedics. Previous, preliminary reports show that such
alumina-zirconia nanocomposites exhibit high crack resistance and low wear
rate. In this paper, additional information is given in terms of wear, crack
resistance and a... | 1804.08702v1 |
2018-10-18 | Topological Hall effect in thin films of Mn$_{1.5}$PtSn | Spin chirality in metallic materials with non-coplanar magnetic order can
give rise to a Berry phase induced topological Hall effect. Here, we report the
observation of a large topological Hall effect in high-quality films of
Mn$_{1.5}$PtSn that were grown by means of magnetron sputtering on MgO(001).
The topological H... | 1810.08232v1 |
2019-06-19 | Origin of current-controlled negative differential resistance modes and the emergence of composite characteristics with high complexity | Current-controlled negative differential resistance has significant potential
as a fundamental building block in brain-inspired neuromorphic computing.
However, achieving desired negative differential resistance characteristics,
which is crucial for practical implementation, remains challenging due to
little consensus ... | 1907.02651v1 |
2022-05-06 | Interfacial resistive switching by multiphase polarization in ion-intercalation nanofilms | Nonvolatile resistive-switching (RS) memories promise to revolutionize
hardware architectures with in-memory computing. Recently, ion-interclation
materials have attracted increasing attention as potential RS materials for
their ion-modulated electronic conductivity. In this Letter, we propose RS by
multiphase polariza... | 2205.02980v2 |
2023-09-13 | Amorphous VO$_x$ films with high temperature coefficient of the resistivity grown by reactive e-beam evaporation of V metal | Amorphous VO$_x$ films without a hysteretic phase transition are stable with
respect to thermal cycling and highly demanded as sensitive elements of the
resistive thermometers and microbolometers. In this paper we present simple and
low-temperature growth of amorphous vanadium oxide films by reactive electron
beam evap... | 2309.07036v1 |
2007-01-02 | Negative Differential Resistance of Electrons in Graphene Barrier | The graphene is a native two-dimensional crystal material consisting of a
single sheet of carbon atoms. In this unique one-atom-thick material, the
electron transport is ballistic and is described by a quantum relativistic-like
Dirac equation rather than by the Schrodinger equation. As a result, a graphene
barrier beha... | 0701011v1 |
2019-10-07 | Growth and Characterization of Polycrystalline NbO2 Thin Films on Crystalline and Amorphous Substrates | NbO2 is a potential material for nanometric memristor devices, both in the
amorphous and the crystalline form. We fabricated NbO2 thin films using
RF-magnetron sputtering from a stoichiometric target. The as-deposited films
were amorphous regardless of the sputtering parameters. Post deposition vacuum
annealing of the ... | 1910.02824v1 |
2004-04-18 | Anisotropy of superconductivity of as-grown MgB$_2$ thin films by molecular beam epitaxy | Superconducting thin films of magnesium diboride (MgB$_2$) were prepared on
MgO (001) substrate by a molecular beam epitaxy (MBE) method with the
co-evaporation conditions of low deposition rate in ultra-high vacuum. The
structural and physical properties of the films were studied by RHEED, XRD,
XPS, resistivity and ma... | 0404415v1 |
2005-08-02 | Epitaxial growth and transport properties of Nb-doped SrTiO$_{3}$ thin films | Nb-doped SrTiO$_{3}$ epitaxial thin films have been prepared on (001)
SrTiO$_{3}$ substrates using pulsed laser deposition. A high substrate
temperature ($>1000^{\circ}{C}$) was found to be necessary to achieve
2-dimensional growth. Atomic force microscopy reveals atomically flat surfaces
with 3.9 \AA $ $ steps. The fi... | 0508073v1 |
2011-11-07 | Monte Carlo Study of Magnetic Resistivity in Semiconducting MnTe | We investigate in this paper properties of the spin resistivity in the
magnetic semiconducting MnTe of NiAs structure. MnTe is a crossroad
semiconductor with a large band gap. It is an antiferromagnet with the N\'eel
temperature around 310K. Due to this high N\'eel temperature, there are many
applications using its mag... | 1111.1507v1 |
2016-11-21 | Ramsey Interferometry of Particle-Hole Pairs in Tunnel Junctions | We present a method to probe real-time dynamics in quantum mesoscopic systems
using Ramsey interferometry. This allows us to explore the effect of
interactions on quasi-particles in the time domain. We investigate the
dephasing effects of an ohmic environment on an electron-hole pair in a tunnel
junction. We show that ... | 1611.06738v1 |
2010-11-08 | Normal state resistivity of Ba$_{1-x}$K$_x$Fe$_2$As$_2$: evidence for multiband strong-coupling behavior | We present theoretical analysis of the normal state resistivity in multiband
superconductors in the framework of Eliashberg theory. The results are compared
with measurements of the temperature dependence of normal state resistivity of
high-purity Ba$_{0.68}$K$_{0.32}$Fe$_{2}$As$_{2}$ single crystals with the
highest r... | 1011.1900v3 |
2014-03-18 | Electron-Phonon Interactions and the Intrinsic Electrical Resistivity of Graphene | We present a first-principles study of the temperature- and density-dependent
intrinsic electrical resistivity of graphene. We use density-functional theory
and density-functional perturbation theory together with very accurate Wannier
interpolations to compute all electronic and vibrational properties and
electron-pho... | 1403.4603v1 |
2018-06-03 | Influence of hydrogen on electron-phonon coupling and intrinsic electrical resistivity in zirconium: a first-principles study | The paper presents the first-principle calculation of the electron-phonon
coupling and the temperature dependence of the intrinsic electrical resistivity
of the zirconium-hydrogen system with various hydrogen concentrations. The
nature of the anomalous decrease in the electrical resistivity of the Zr-H
system with the ... | 1806.00847v3 |
2021-12-29 | Significant reduction in semiconductor interface resistance via interfacial atomic mixing | The contact resistance between two dissimilar semiconductors is determined by
the carrier transmission through their interface. Despite the ubiquitous
presence of interfaces, quantitative simulation of charge transport across such
interfaces is difficult, limiting the understanding of interfacial charge
transport. This... | 2112.14400v2 |
2005-02-26 | Josephson junction decoupling is the main origin of AC resistivity in the superconducting state | The origin of AC resistivity in the high Tc superconductors is not addressed
adequately in literature. We found out, Josephson Junction (JJ) decoupling is
the main origin of the AC resistivity in high Tc superconductors. We have
measured the AC resistivity in the superconductors in the low frequency range
by measuring ... | 0502639v1 |
2022-08-03 | Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ Films | We report on the realization of record low resistance Ohmic contacts to
MOVPE-grown heavily Si-doped $\beta$-Ga$_2$O$_3$ and
$\beta$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ epitaxial films. Transfer length measurement
(TLM) patterns were fabricated on the heavily Si-doped homoepitaxial
$\beta$-Ga$_2$O$_3$ films with electron concen... | 2208.02322v1 |
2022-11-30 | High-efficiency energy harvesting based on nonlinear Hall rectifier | Noncentrosymmetric quantum materials can convert AC input current into DC
transverse current through the nonlinear Hall effect at zero magnetic field. We
analyze the AC-DC power conversion efficiency of such ``Hall rectifier'' and
suggest its application in wireless charging and energy harvesting. Our key
observation i... | 2211.17219v2 |
2011-02-28 | Introduction to bulk metallic glass composite and its recent applications | Bulk metallic glass (BMG) materials are hot topics in recent years, not to
mention BMG matrix composites, which further improve the magnetic and
mechanical properties of BMG materials. BMG and BMG matrix materials are fast
developing and promising materials in modern industry due to their
extraordinary properties such ... | 1102.5758v1 |
2008-05-04 | Increase of the wear resistance of carbide layers deposited by Pulsed Laser Deposition in addition with an auxiliary laser | Carbides stand out because of their high hardness and wear-resistance. Thus
these materials are often discussed for coatings of machine tools etc. Within
this work Boron Carbide (B4C) and Carbide (C) thin films were deposited on Si
(100) substrates by pulsed-laser deposition technique. In order to improve the
wear-resi... | 0805.0430v1 |
2017-10-24 | Lithographic performance of ZEP520A and mr-PosEBR resists exposed by electron beam and extreme ultraviolet lithography | Pattern transfer by deep anisotropic etch is a well-established technique for
fabrication of nanoscale devices and structures. For this technique to be
effective, the resist material plays a key role and must have high resolution,
reasonable sensitivity and high etch selectivity against the conventional
silicon substra... | 1710.08733v1 |
2016-04-14 | Study of Glass and Bakelite properties as electrodes in RPCs | India-based Neutrino Observatory (INO) collaboration is planning to build a
magnetized Iron-CALorimeter detector (ICAL) for the study of atmospheric
neutrinos. ICAL detector will be a stack of 151 layers of magnetized iron
plates interleaved with Resistive Plate Chambers (RPCs) as active detector
elements with a total ... | 1604.04130v2 |
2023-01-11 | Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes | The two-dimensional (2D) insulating material hexagonal boron nitride (h BN)
has attracted much attention as the active medium in memristive devices due to
its favorable physical properties, among others, a wide bandgap that enables a
large switching window. Metal filament formation is frequently suggested for
h-BN devi... | 2301.10158v2 |
2021-08-21 | Resistivity size effect due to surface steps on ruthenium thin films computed with a realistic tight-binding model | A realistic tight-binding model is developed and employed to elucidate the
resistivity size effect due to steps on Ru thin films. The resistivity of two
different film orientations, $(0001)$ and $(1 \bar{1}00)$, is computed for
transport along a $[1 1 \bar{2} 0]$ direction both for smooth surfaces and for
surfaces with... | 2108.09424v7 |
2018-11-14 | Linear-in-T resistivity in dilute metals: A Fermi liquid perspective | We consider a short-range deformation potential scattering model of
electron-acoustic phonon interaction to calculate the resistivity of an ideal
metal as a function of temperature (T) and electron density (n). We consider
both 3D metals and 2D metals, and focus on the dilute limit, i.e., low
effective metallic carrier... | 1811.05862v2 |
2012-04-10 | Challenges for RPCs and resistive micropattern detectors in the next few years | Nowadays RPCs are in a booming phase: they are successfully used in many
experiments, including LHC; there are ambitious plans to use them in several
upgrade detectors and in some new experiments as well as in various
applications. The aim of this paper is to highlight the main challenges which
the RPC community may fa... | 1204.2144v1 |
2021-01-28 | Magnetic Field Effects on the Transport Properties of High-Tc Cuprates | Starting from a recently proposed comprehensive theory for the high-Tc
superconductivity in cuprates, we derive a general analytic expression for the
planar resistivity, in the presence of an applied external magnetic field
$\textbf{H}$ and explore its consequences in the different phases of these
materials. As an init... | 2101.11969v1 |
2022-09-08 | Dominance of Electron-Magnon Scattering in Itinerant Ferromagnet Fe3GeTe2 | Fe3GeTe2 is a 2-dimensional van der Waals material exhibiting itinerant
ferromagnetism upto 230 K. Here, we study aspects of scattering mechanism in
Fe3Ge2Te2 single crystals via resistivity, magneto-transport and Hall effect
measurements. The quadratic temperature dependence of electrical resistivity
below the Curie t... | 2209.03555v1 |
2014-12-01 | Novel experimental design for high pressure - high temperature electrical resistance measurements in a 'Paris-Edinburgh' large volume press | We present a novel experimental design for high sensitivity measurements of
the electrical resistance of samples at high pressures (0-6GPa) and high
temperatures (300-1000K) in a 'Paris-Edinburgh' type large volume press.
Uniquely, the electrical measurements are carried out directly on a small
sample, thus greatly inc... | 1412.0613v2 |
2010-05-13 | Gravitational-wave spin-down and stalling lower limits on the electrical resistivity of the accreted mountain in a millisecond pulsar | The electrical resistivity of the accreted mountain in a millisecond pulsar
is limited by the observed spin-down rate of binary radio millisecond pulsars
(BRMSPs) and the spins and X-ray fluxes of accreting millisecond pulsars
(AMSPs). We find $\eta \ge 10^{-28}\,\mathrm{s}\,
(\tau_\mathrm{SD}/1\,\mathrm{Gyr})^{-0.8}$ ... | 1005.2257v1 |
2017-01-23 | Crystal Growth and Magneto-transport of Bi2Se3 Single crystals | In this letter, we report growth and characterization of bulk Bi2Se3 single
crystals. The studied Bi2Se3 crystals are grown by self flux method through
solid state reaction from high temperature (950C) melt of constituent elements
and slow cooling (2C/hour). The resultant crystals are shiny and grown in [00l]
direction... | 1701.06280v2 |
2020-06-24 | Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories | This study demonstrates multilevel switching at 1.5 K of Al2O3/TiO2-x
resistive memory devices fabricated with CMOS-compatible processes and
materials. The I-V characteristics exhibit a negative differential resistance
(NDR) effect due to a Joule-heating-induced metal-insulator transition of the
Ti4O7 conductive filame... | 2006.13394v1 |
2002-04-23 | Effects of stoichiometry, purity, etching and distilling on resistance of MgB2 pellets and wire segments | We present a study of the effects of non-stoichiometry, boron purity, wire
diameter and post-synthesis treatment (etching and Mg distilling) on the
temperature dependent resistance and resistivity of sintered MgB2 pellets and
wire segments. Whereas the residual resistivity ratio (RRR) varies between RRR
\~ 4 to RRR > 2... | 0204510v1 |
2007-01-19 | Resistance Anomaly in Disordered Superconducting Films | We report on a resistance anomaly in disordered superconducting films
containing arrays of irregularly distributed nanoscale holes. At high driving
currents, peaks appear in the resistance as a function of temperature, with
peak values up to 2% above the classic normal-state resistance. We attribute
the observed resist... | 0701483v1 |
2007-07-28 | Giant Magneto-impedance in stress-annealed Finemet/Copper/Finemet based trilayer structures | The resistive and reactive components of magneto-impedance (MI) for
Finemet/Copper/Finemet sandwiched structures based on stress-annealed
nanocrystalline Fe75Si15B6Cu1Nb3 ribbons as functions of different fields
(longitudinal and perpendicular) and frequencies have been measured and
analyzed. Maximum magneto-resistance... | 0707.4229v1 |
2010-04-12 | Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene FET | The intrinsic channel properties of monolayer and multilayer graphene were
systematically investigated as a function of layer number by the exclusion of
contact resistance using four-probe measurements. We show that the continuous
change in normalized sheet resistivity from graphite to a bilayer graphene is
governed by... | 1004.2074v1 |
2010-09-02 | Kondo and charge fluctuation resistivity due to Anderson impurities in graphene | Motivated by experiments on ion irradiated graphene, we compute the
resistivity of graphene with dilute impurities. In the local moment regime we
employ the perturbation theory up to third order in the exchange coupling to
determine the behavior at high temperatures within the Kondo model. Resistivity
due to charge flu... | 1009.0551v3 |
2017-10-05 | Electric field Control of Exchange Bias by Resistive Switching | We demonstrated an electric field controlled exchange bias (EB) effect
accompanied with unipolar resistive switching behavior in the
Si/SiO2/Pt/Co/NiO/Pt device. By applying certain voltages, the device displays
obvious EB in high-resistance-state while negligible EB in
low-resistance-state. Conductive filaments formin... | 1710.01865v1 |
2018-06-11 | Conductivity and Resistivity of Dirac Electrons in Single-Component Molecular Conductor [Pd(dddt)_2] | Dirac electrons, which have been found in the single-component molecular
conductor [Pd(dddt)_2] under pressure, are examined by calculating the
conductivity and resistivity in terms of a tight-binding model for several
pressures of P GPa, which give a nodal line semimetal or insulator. The
temperature (T) dependence of... | 1806.03819v2 |
2019-05-29 | Intrinsic resistance peaks in AB-stacked multilayer graphene with odd number of layers | The intrinsic resistance peak (ridge) structures were recently found to
appear in the carrier density dependence plot of the resistance of the
AB-stacked multilayer graphene with even numbers of layers.The ridges are due
to topological changes in the Fermi surface. Here, these structures were
studied in AB-stacked mult... | 1905.12193v2 |
2014-08-01 | Resistive switching in ultra-thin La0.7Sr0.3MnO3 / SrRuO3 superlattices | Superlattices may play an important role in next generation electronic and
spintronic devices if the key-challenge of the reading and writing data can be
solved. This challenge emerges from the coupling of low dimensional individual
layers with macroscopic world. Here we report the study of the resistive
switching char... | 1408.0103v1 |
2019-07-19 | Niobium nitride thin films for very low temperature resistive thermometry | We investigate thin film resistive thermometry based on
metal-to-insulator-transition (niobium nitride) materials down to very low
temperature. The variation of the NbN thermometer resistance have been
calibrated versus temperature and magnetic field. High sensitivity in
tempertaure variation detection is demonstrated ... | 1907.08443v1 |
2018-07-23 | Coexistence of Diamagnetism and Vanishingly Small Electrical Resistance at Ambient Temperature and Pressure in Nanostructures | The great practical utility has motivated extensive efforts to discover
ultra-low resistance electrical conductors and superconductors in ambience.
Here we report the observation of vanishingly small electrical resistance at
the ambient temperature and pressure conditions in films and pellets of a
nanostructured materi... | 1807.08572v3 |
2022-11-22 | Contact Resistance Study of Various Metal Electrodes with CVD Graphene | In this study, the contact resistance of various metals to chemical vapour
deposited (CVD) monolayer graphene is investigated. Transfer length method
(TLM) structures with varying widths and separation between contacts have been
fabricated and electrically characterized in ambient air and vacuum condition.
Electrical c... | 2211.12415v1 |
2023-03-06 | Quantum Acoustics Spawns Planckian Resistivity | Strange metals exhibit universal linear-in-temperature resistivity described
by a Planckian scattering rate, the origin of which remains elusive. By
employing a novel approach inspired by quantum optics, we arrive at the
coherent state limit of lattice vibrations: quantum acoustics. Utilizing this
nonperturbative frame... | 2303.06077v3 |
2011-04-11 | DOS-limited contact resistance in graphene FETs | Graphene has attracted much attention as one of promising candidates of
future high-speed transistor materials because of its high carrier mobility of
more than 10,000 cm2 V-1 s-1. Up to this point, we have focused on the contact
properties as performance killers, as a very small density of states in
graphene might sup... | 1104.1818v1 |
2006-07-28 | Contact effects in polymer field-effect transistors | Contact resistances often contribute significantly to the overall device
resistance in organic field-effect transistors (OFETs). Understanding charge
injection at the metal-organic interface is critical to optimizing OFET device
performance. We have performed a series of experiments using bottom-contact
poly(3-hexylthi... | 0607744v1 |
2008-11-21 | Tuning the Correlation Decay in the Resistance Fluctuations of Multi-Species Networks | A new network model is proposed to describe the $1/f^\alpha$ resistance noise
in disordered materials for a wide range of $\alpha$ values ($0< \alpha < 2$).
More precisely, we have considered the resistance fluctuations of a thin
resistor with granular structure in different stationary states: from nearly
equilibrium u... | 0811.3565v2 |
2023-07-01 | The near room-temperature upsurge of electrical resistivity in Lu-H-N is not superconductivity, but a metal-to-poor-conductor transition | Since the discovery of superconductivity in mercury at 4 K in 1911, searching
for materials with superconductivity at higher temperatures towards practical
conditions has been a primary enduring goal. The recent report of
room-temperature superconductivity at near-ambient pressure in nitrogen-doped
lutetium hydride (Lu... | 2307.00201v1 |
2020-01-17 | Magnetic, magnetoelastic and corrosion resistant properties of (Fe-Ni) based metallic glasses for structural health monitoring applications | We have performed a study of the magnetic, magnetoelastic, and corrosion
resistance properties of seven different composition magnetoelastic-resonant
platforms. For some applications, such as structural health monitoring, these
materials must have not only good magnetomechanical properties, but also a high
corrosion re... | 2001.06283v1 |
2014-05-08 | Controlling boron redistribution in CoFeB/MgO magnetic tunnel junctions during annealing by variation of cap layer materials and MgO deposition methods | Magnetic tunnel junctions with crystalline MgO tunnel barrier and amorphous
CoFeB electrodes received much attention due to their high tunnel magneto
resistance ratio at room temperature. One important parameter for achieving
high tunnel magneto resistance ratios is to control the boron diffusion from
the electrodes es... | 1405.1907v1 |
2021-10-20 | Materials and possible mechanisms of extremely large magnetoresistance: A review | Magnetoresistance (MR) is a characteristic that the resistance of a substance
changes with the external magnetic field, reflecting various physical origins
and microstructures of the substance. A large MR, namely a huge response to a
low external field, has always been a useful functional feature in industrial
technolo... | 2110.10454v1 |
2024-05-09 | Extreme high lattice-misfit superalloys with regular cubic L12 particles and excellent creep resistance | In novel Co and CoNi based superalloys, the creep resistance is limited at
high temperatures due to low lattice misfit and solvus temperature. In this
study, we combined the advantages of Co-Ti (high lattice misfit and solvus
temperature) and Co-Al based superalloys (cuboidal precipitates) by using Ti to
substitute Al ... | 2405.05851v1 |
2019-01-28 | Strong damping-like spin-orbit torque and tunable Dzyaloshinskii-Moriya interaction generated by low-resistivity Pd$_{1-x}$Pt$_x$ alloys | Despite their great promise for providing a pathway for very efficient and
fast manipulation of magnetization at the nanoscale, spin-orbit torque (SOT)
operations are currently energy inefficient due to a low damping-like SOT
efficiency per unit current bias, and/or the very high resistivity of the spin
Hall materials.... | 1901.09954v1 |
2014-10-29 | Contact Research Strategy for Emerging Molybdenum Disulfide and Other Two-Dimensional Field-effect Transistors | Layered two-dimensional (2D) semiconducting transition metal dichalcogenides
(TMD) have been widely isolated, synthesized, and characterized recently.
Numerous 2D materials are identified as the potential candidates as channel
materials for future thin film technology due to their high mobility and the
exhibiting bandg... | 1410.8201v1 |
2023-06-29 | Speeding up high-throughput characterization of materials libraries by active learning: autonomous electrical resistance measurements | High-throughput experimentation enables efficient search space exploration
for the discovery and optimization of new materials. However, large search
spaces of, e.g., compositionally complex materials, require decreasing
characterization times significantly. Here, an autonomous measurement algorithm
was developed, whic... | 2306.17277v1 |
2013-03-29 | An operational window for radiation-resistant materials based on sequentially healing grain interiors and boundaries | Design of nuclear materials with high radiation-tolerance has great
significance1, especially for the next generation of nuclear energy systems2,3.
Response of nano- and poly-crystals to irradiation depends on the radiation
temperature, dose-rate and grain size4-13. However the dependencies had been
studied and interpr... | 1303.7316v1 |
2004-09-08 | Magnetic and electronic phase transformations in (Sm0.65Sr0.35)MnO3 induced by temperature and magnetic field | Temperature (4.2-260 K) and magnetic field (0-50 kOe) dependencies of the dc
electrical resistance, dc magnetization, and ac magnetic susceptibility of
(Sm0.65Sr0.35)MnO3 prepared from high purity components have been studied. | 0409213v1 |
2015-11-19 | High performance sensors based on resistance fluctuations of single layer graphene transistors | One of the most interesting predicted applications of graphene monolayer
based devices is as high quality sensors. In this letter we show, through
systematic experiments, a chemical vapor sensor based on the measurement of low
frequency resistance fluctuations of single layer graphene
field-effect-transistor (SLG-FET) ... | 1511.06213v1 |
2014-08-19 | Aluminium-oxide wires for superconducting high kinetic inductance circuits | We investigate thin films of conducting aluminium-oxide, also known as
granular aluminium, as a material for superconducting high quality, high
kinetic inductance circuits. The films are deposited by an optimised reactive
DC magnetron sputter process and characterised using microwave measurement
techniques at milli-Kel... | 1408.4347v3 |
2013-05-05 | Resistance of High-Temperature Cuprate Superconductors | Cuprate superconductors have many different atoms per unit cell. A large
fraction of cells (5-25%) must be modified ("doped") before the material
superconducts. Thus it is not surprising that there is little consensus on the
superconducting mechanism, despite almost 200,000 papers. Most astonishing is
that for the simp... | 1305.1058v1 |
2013-12-18 | Cyclic electric field stress on bipolar resistive switching devices | We have studied the effects of accumulating cyclic electrical pulses of
increasing amplitude on the non-volatile resistance state of interfaces made by
sputtering a metal (Au, Pt) on top of the surface of a cuprate superconductor
YBa$_2$Cu$_3$O$_{7-\delta}$ (YBCO). We have analyzed the influence of the
number of applie... | 1312.5338v1 |
2014-06-13 | Subcoercive and multilevel ferroelastic remnant states with resistive readout | Ferroelectric devices use their electric polarization ferroic order as the
switching and storage physical quantity for memory applications. However,
additional built-in physical quantities and memory paradigms are requested for
applications. We propose here to take advantage of the multiferroic properties
of ferroelect... | 1406.3457v1 |
2023-03-08 | Encoding multistate charge order and chirality in endotaxial heterostructures | High-density phase change memory (PCM) storage is proposed for materials with
multiple intermediate resistance states, which have been observed in
1$T$-TaS$_2$ due to charge density wave (CDW) phase transitions. However, the
metastability responsible for this behavior makes the presence of multistate
switching unpredic... | 2303.04387v3 |
2021-05-13 | Interaction Effects and Viscous Magneto-Transport in a Strongly Correlated 2D Hole System | Fermi liquid theory has been a foundation in understanding the electronic
properties of materials. For weakly interacting two-dimensional (2D) electron
or hole systems, electron-electron interactions are known to introduce quantum
corrections to the Drude conductivity in the FL theory, giving rise to
temperature depend... | 2105.06502v1 |
2015-04-29 | Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions | Graphene-based vertical heterostructures, particularly stacks incorporated
with other layered materials, are promising for nanoelectronics. The stacking
of two model Dirac materials, graphene and topological insulator, can
considerably enlarge the family of van der Waals heterostructures. Despite well
understanding of ... | 1504.07780v3 |
2022-03-31 | Towards automated design of corrosion resistant alloy coatings with an autonomous scanning droplet cell | We present an autonomous scanning droplet cell platform designed for
on-demand alloy electrodeposition and real-time electrochemical
characterization for investigating the corrosion-resistance properties of
multicomponent alloys. Automation and machine learning are currently driving
rapid innovation in high throughput ... | 2203.17049v1 |
2019-06-10 | Quantum oscillation of thermal conductivity and violation of Weidemann-Franz law in TaAs$_2$ and NbAs$_2$ | We report a study of thermal conductivity and resistivity at ultra-low
temperatures and in high magnetic fields for semi-metal materials TaAs$_2$ and
NbAs$_2$ by using single crystal samples. The thermal conductivity is strongly
suppressed in magnetic fields, having good correspondence with the large
positive magnetore... | 1906.03961v3 |
2022-01-09 | Resistivity testing of palladium dilution limits in CoPd alloys for hydrogen storage | Palladium satisfies most of the requirements for an effective hydrogen
storage material with two major drawbacks: it has a relatively low gravimetric
hydrogen density and is prohibitively expensive for large-scale applications.
Pd-based alloys should be considered as possible alternatives to a pure Pd. The
question is ... | 2201.02974v1 |
2023-05-26 | Ferroelectricity driven-resistive switching and Schottky barrier modulation at CoPt/MgZnO interface for non-volatile memories | Ferroelectric memristors have attracted much attention as a type of
nonvolatile resistance switching memories in neuromorphic computing, image
recognition, and information storage. Their resistance switching mechanisms
have been studied several times in perovskite and complicated materials
systems. It was interpreted a... | 2305.16563v3 |
2016-08-04 | Bulk Superconductivity Induced by In-plane Chemical Pressure Effect in Eu0.5La0.5FBiS2-xSex | We have investigated Se substitution effect to superconductivity of an
optimally-doped BiS2-based superconductor Eu0.5La0.5FBiS2. Eu0.5La0.5FBiS2-xSex
samples with x = 0-1 were synthesized. With increasing x, in-plane chemical
pressure is enhanced. For x = 0.6, 0.8, and 1, superconducting transitions with
a large shiel... | 1608.01470v2 |
2018-11-03 | Carbon nanotube/metal corrosion issues for nanotube coatings and inclusions in a matrix | Corrosion is an inevitable phenomenon that is inherent in metals and even
though there has been significant research on this subject, no ideal protection
has been discovered to fully prevent corrosion. However, methods such as using
protective coatings, and modifying the structure or composition of the material
have be... | 1812.03815v1 |
1997-04-29 | Normal state c-axis resistivity of high T_c cuprate superconductors | It is shown that a strong intraplanar incoherent scattering can effectively
block the interplanar coherent tunneling between the weakly coupled planes of
the highly anisotropic but clean (intrinsic) materials such as the optimally
doped high-T_c layered cuprate superconductors. The calculated normal-state
C-axis resist... | 9704242v1 |
1997-09-24 | Radiation Induced Damage in GaAs Particle Detectors | The motivation for investigating the use of GaAs as a material for detecting
particles in experiments for High Energy Physics (HEP) arose from its perceived
resistance to radiation damage. This is a vital requirement for detector
materials that are to be used in experiments at future accelerators where the
radiation en... | 9709034v1 |
2017-07-05 | Effects of Temperature and Near Ultraviolet Light on Current-Voltage Characteristics of Colemanite | We investigate current-voltage (I-V) characteristics of the ferroelectric
material colemanite at room temperature, at a high temperature, and also under
the influence of near ultraviolet light. We demonstrate that all three I-V
plots exhibit hysteresis effects, and these new results shed new light on the
resistance of ... | 1707.01194v1 |
2023-08-23 | Verification of Wiedemann-Franz law in silver with moderate residual resistivity ratio | Electrical and thermal transport were studied in a vacuum-annealed
polycrystalline silver wire with residual resistivity ratio 200-400, in the
temperature range 0.1-1.2K and in magnetic fields up to 5T. Both at zero field
and at 5T the wire exhibits the Wiedemann-Franz law with the fundamental Lorenz
number, contrary t... | 2308.12349v1 |
2016-02-02 | Coexistence of magneto-resistance and -capacitance tunability in Sm2Ga2Fe2O9 | We propose that charge gradient resulting in the coexisting
magneto-resistance and-capacitance tunability in material systems. We have
experimentally observed coexisting of tunable magneto-resistance and
-capacitance in Sm2Ga2Fe2O9. Our model fits well with the experimental result. | 1602.01136v1 |
2013-03-06 | Nonlinear Surface Resistance of YBa2Cu3O7-x Superconducting Thin Films on MgO Substrates in Dielectric Resonator at Ultra High Frequencies | The nonlinear surface resistance Rs of the YBa2Cu3O7-x superconducting thin
films on the MgO substrates was researched in the Hakki-Coleman dielectric
resonator at the microwave signal powers from -18 dBm to +30 dBm at the ultra
high frequency of 25 GHz in the range of temperatures from 12 K to 85 K. The
dependences of... | 1303.1276v2 |
2019-12-13 | Picosecond Multilevel Resistive Switching in Tantalum Oxide Thin Films | The increasing demand for high-density data storage leads to an increasing
interest in novel memory concepts with high scalability and the opportunity of
storing multiple bits in one cell. A promising candidate is the redox-based
resistive switch repositing the information in form of different resistance
states. For re... | 2002.00700v1 |
2014-03-05 | Strong Oxidation Resistance of Atomically Thin Boron Nitride Nanosheets | Investigation on oxidation resistance of two-dimensional (2D) materials is
critical for many of their applications, because 2D materials could have higher
oxidation kinetics than their bulk counterparts due to predominant surface
atoms and structural distortions. In this study, the oxidation behavior of
high-quality bo... | 1403.1002v1 |
2016-08-30 | Design and Demonstration of Ultra Wide Bandgap AlGaN Tunnel Junctions | Ultra violet light emitting diodes (UV LEDs) face critical limitations in
both the injection efficiency and light extraction efficiency due to the
resistive and absorbing p-type contact layers. In this work, we investigate the
design and application of polarization engineered tunnel junctions for
ultra-wide bandgap AlG... | 1608.08653v1 |
2010-02-10 | Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: application to (113)A-oriented layers | Based on a detailed theoretical examination of the lattice distortion in
high-index epilayers in terms of continuum mechanics, expressions are deduced
that allow the calculation and experimental determination of the strain tensor
for (hhl)-oriented (Ga,Mn)As layers. Analytical expressions are derived for the
strain-dep... | 1002.2179v2 |
2011-08-08 | Beam screen issues | In the High Energy LHC (HE-LHC), a beam energy of about 16.5 TeV is currently
contemplated. The beam screen issues linked to the use of 20 T dipole magnets
instead of 8.33 T are discussed, with a particular emphasis on two mechanisms,
the magneto-resistance and the anomalous skin effect, assuming the nominal
machine an... | 1108.1643v1 |
2012-04-15 | A Structural Phase Transition in Ca3Co4O9 Associated with Enhanced High Temperature Thermoelectric Properties | Temperature dependent electrical resistivity, crystal structure and heat
capacity measurements reveal a resistivity drop and metal to semiconductor
transition corresponding to first order structural phase transition near 400 K
in Ca3Co4O9. The lattice parameter c varies smoothly with increasing
temperature, while anoma... | 1204.3231v1 |
2015-10-07 | Fabrication and Characterisation of Oil-Free Large High Pressure Laminate Resistive Plate Chamber | A large (240 cm $\times$ 120 cm $\times$ 0.2 cm) oil-free High Pressure
Laminate (HPL), commonly referred as "bakelite", Resistive Plate Chamber (RPC)
has been developed at VECC-Kolkata using locally available P-302 OLTC grade
HPL. The chamber has been operated in streamer mode using Argon, Freon(R134a)
and Iso-butane ... | 1510.02028v4 |
2016-11-22 | CSAR 62 as negative-tone resist for high-contrast e-beam lithography at temperatures between 4 K and room temperature | The temperature dependence of the electron-beam sensitive resist CSAR 62 is
investigated in its negative-tone regime. The writing temperatures span a wide
range from 4 K to room temperature with the focus on the liquid helium
temperature regime. The importance of low temperature studies is motivated by
the application ... | 1611.07266v1 |
2017-07-24 | Advancement in the understanding of the field and frequency dependent microwave surface resistance of niobium | The radio-frequency surface resistance of niobium resonators is incredibly
reduced when nitrogen impurities are dissolved as interstitial in the material,
conferring ultra-high Q-factors at medium values of accelerating field. This
effect has been observed in both high and low temperature nitrogen treatments.
As a matt... | 1707.07582v1 |
2022-09-29 | Magnetic properties, electrical resistivity, and hardness of high-entropy alloys FeCoNiPd and FeCoNiPt | We report the magnetic properties, electrical resistivity, and Vickers
microhardness of as-cast and annealed high-entropy alloys (HEAs) FeCoNiPd and
FeCoNiPt with the face-centered cubic structure. The heat treatment at 800
$^{\circ}$C does not largely affect the physical properties in each HEA. The
values of the Curie... | 2209.14506v1 |
2018-11-29 | Logarithmic Upturn in Low-Temperature Electronic Transport as a Signature of d-Wave Order in Cuprate Superconductors | In cuprate superconductors, high magnetic fields have been used extensively
to suppress superconductivity and expose the underlying normal state. Early
measurements revealed insulating-like behavior in underdoped material versus
temperature $T$, in which resistivity increases on cooling with a puzzling
$\log(1/T)$ form... | 1811.12348v1 |
2019-05-31 | Pressure-Induced Structural Phase Transition and a Special Amorphization Phase of Two-Dimensional Ferromagnetic Semiconductor Cr2Ge2Te6 | Layered transition-metal trichalcogenides have become one of the research
frontiers as two-dimensional magnets and candidate materials used for
phase-change memory devices. Herein we report the high-pressure synchrotron
X-ray diffraction and resistivity measurements on Cr2Ge2Te6 (CGT) single
crystal by using diamond an... | 1905.13603v1 |
2018-08-23 | Evidence for superconductivity above 260 K in lanthanum superhydride at megabar pressures | Recent predictions and experimental observations of high Tc superconductivity
in hydrogen-rich materials at very high pressures are driving the search for
superconductivity in the vicinity of room temperature. We have developed a
novel preparation technique that is optimally suited for megabar pressure
syntheses of sup... | 1808.07695v3 |
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