publicationDate stringlengths 10 10 | title stringlengths 17 233 | abstract stringlengths 20 3.22k | id stringlengths 9 12 |
|---|---|---|---|
2005-07-19 | Resistance profile measurements on a symmetric electrical pulse induced resistance change device | We report the first direct measurements of the micro scale resistance profile
between the terminals of a two terminal symmetric thin film Pr0.7Ca0.3MnO3
electrical pulse induced resistance change device composed of a Pr0.7Ca0.3MnO3
active layer. The symmetric device is one in which the electrode shape, size,
compositio... | 0507432v2 |
2019-07-03 | Suppression of the antiferromagnetic metallic state in the pressurized MnBi2Te4 single crystal | MnBi2Te4 has attracted tremendous research interest recently as the first
intrinsic antiferromagnetic (AF) topological insulator. It undergoes a
long-range AF order at TN = 24 K accompanied with a cusp-like anomaly in the
metallic resistivity. Here, we studied the effect of hydrostatic pressure on
its electrical transp... | 1907.01760v1 |
2020-09-02 | Understanding modes of negative differential resistance in amorphous and polycrystalline vanadium oxides | Metal-oxide-metal devices based on amorphous VOx are shown to exhibit one of
two distinct negative differential resistance (NDR) characteristics depending
on the maximum current employed for electroforming. For low compliance currents
they exhibit a smooth S-type characteristic and have a temperature-dependent
device r... | 2009.00810v1 |
2022-03-31 | Atomic-scale origin of the low grain-boundary resistance in perovskite solid electrolytes | Oxide solid electrolytes (OSEs) have the potential to achieve improved safety
and energy density for lithium-ion batteries, but their high grain-boundary
(GB) resistance is a general bottleneck. In the most well studied perovskite
OSE, Li3xLa2/3-xTiO3 (LLTO), the ionic conductivity of GBs is about three
orders of magni... | 2204.00091v1 |
2008-03-29 | Superconductivity at 52 K in iron-based F-doped layered quaternary compound Pr[O1-xFx]FeAs | Since the discovery of copper oxide superconductor in 1986 [1], extensive
efforts have been devoted to the search of new high-Tc superconducting
materials, especially high-Tc systems other than cuprates. The recently
discovered quaternary superconductor La[O1-xFx]FeAs with the superconducting
critical transition Tc of ... | 0803.4283v1 |
2017-01-14 | Systematic comprehension the metal phase of Pr0.7(CaxSr1-x)0.3MnO3 via temperature and magnetic induction | Temperature, magnetic induction and substitution dependent resistivity are a
crucial factor in determining the physical properties of magneto-resistive
materials. The first objective of this work was to find out an applicable
method of using temperature to predict the resistivity of
Pr0.7(CaxSr1-x)0.3MnO3 in the metal ... | 1701.04688v1 |
1999-04-23 | Shot noise in ferromagnetic single electron tunneling devices | Frequency dependent current noise in ferromagnetic double junctions with
Coulomb blockade is studied theoretically in the limit of sequential tunneling.
Two different relaxation processes are found in the correlations between spin
polarized tunneling currents; low frequency spin fluctuations and high
frequency charge f... | 9904341v1 |
2001-02-28 | Pressure dependence of Tc in the MgB2 superconductor as probed by resistivity measurements | High-pressure resistivity experiments were performed on the recently
discovered superconductor, MgB2. Tc decreases quasi-linearly with applied
pressure to 1.4 GPa at a rate of -2.0(1) K/GPa, which is somewhat larger than
that derived from recently-reported ac susceptibility measurements. The
reduction of Tc is consiste... | 0102511v1 |
2003-03-11 | Microscopic origin of collective exponentially small resistance states | The formation of "zero" (exponentially small) resistance states (ESRS) in
high mobility two-dimensional electron systems (2DES) in a static magnetic
field B and subjected to strong microwave (MW) radiation has attracted great
theoretical interest. These states appear to be associated with a new kind of
energy gap $\Del... | 0303184v2 |
2003-11-03 | Inverted current-driven switching in Fe(Cr)/Cr/Fe(Cr) nanopillars | From both theory and experiment, scattering of minority electrons is expected
to be weaker than scattering of majority electrons in both dilute Fe(Cr) alloys
and at Fe(Cr)/Cr interfaces. We show that Fe(Cr)/Cr/Fe(Cr) trilayer nanopillars
display a normal magnetoresistance--i.e., largest resistance at low magnetic
field... | 0311047v1 |
2004-04-06 | Superconductivity in diamond | We report the discovery of superconductivity in boron-doped diamond
synthesized at high pressure (8-9 GPa) and temperature (2,500-2,800 K).
Electrical resistivity, magnetic susceptibility, specific heat, and
field-dependent resistance measurements show that boron-doped diamond is a
bulk, type-II superconductor below th... | 0404156v1 |
2007-03-21 | Electronic Properties of the Semiconductor RuIn$_3$ | Temperature dependent measurements of the resistivity on RuIn$_3$ single
crystals show a semiconducting behaviour, in contrast to previously published
results. In the high temperature range the semiconducting gap was measured to
be $0.4-0.5$eV. We observe an anisotropy of the resistivity along [110] and
[001] orientati... | 0703563v1 |
2002-06-13 | Potential of RPCs for tracking | We have demonstrated that small gap (0.1 to 0.4 mm) RPCs made of low
resistivity materials (less than 1E8 Ohm.cm) can operate at counting rates of
up to 1E5 Hz/mm2 with position resolutions better than 50 micrometer. Results
of preliminary tests allow us to suggest a possible application of this new
type of RPC for tra... | 0206039v1 |
2008-03-31 | Percolation Model Explaining Both Unipolar Memory and Threshold Resistance Switchings in NiO Film | We observed two types of unipolar resistance switching (RS) in NiO film:
memory RS at low temperature and threshold RS at high temperature. We explain
these phenomena using a bond percolation model that describes the forming and
rupturing of conducting filaments. Assuming Joule heating and thermal
dissipation processes... | 0803.4258v1 |
2009-08-21 | Measuring Charge Transport in an Amorphous Semiconductor Using Charge Sensing | We measure charge transport in hydrogenated amorphous silicon (a-Si:H) using
a nanometer scale silicon MOSFET as a charge sensor. This charge detection
technique makes possible the measurement of extremely large resistances. At
high temperatures, where the a-Si:H resistance is not too large, the charge
detection measur... | 0908.3181v2 |
2010-04-22 | Small gap semiconducting organic charge-transfer interfaces | We investigated transport properties of organic heterointerfaces formed by
single-crystals of two organic donor-acceptor molecules,
tetramethyltetraselenafulvalene (TMTSF) and 7,7,8,8-tetracyanoquinodimethane
(TCNQ). Whereas the individual crystals have un-measurably high resistance, the
interface exhibits a resistivit... | 1004.3927v1 |
2011-05-26 | Coulomb Drag and High Resistivity Behavior in Double Layer Graphene | We show that Coulomb drag in ultra-clean graphene double layers can be used
for controlling the on/off ratio for current flow by tunning the external gate
voltage. Hence, although graphene remains semi-metallic, the double layer
graphene system can be tuned from conductive to a highly resistive state. We
show that our ... | 1105.5399v2 |
2013-09-04 | Low temperature magnetic transitions of single crystal HoBi | We present resistivity, specific heat and magnetization measurements in high
quality single crystals of HoBi, with a residual resistivity ratio of 126. We
find, from the temperature and field dependence of the magnetization, an
antiferromagnetic transition at 5.7 K, which evolves, under magnetic fields,
into a series o... | 1309.1113v1 |
2018-02-25 | Field-effect-driven half-metallic multilayer graphene | Rhombohedral stacked multilayer graphene displays the occurrence of a
magnetic surface state at low temperatures. Recent angular resolved
photoemission experiments demonstrate the robustness of the magnetic state in
long sequences of ABC graphene. Here, by using first-principles calculations,
we show that field-effect ... | 1802.09028v1 |
2020-06-04 | Materials & Properties: Thermal & Electrical Characteristics | This lecture gives an introduction to the basic physics of the electrical
conductivity of metals, its temperature dependence and its limiting factors. We
will then introduce the concept of surface resistance, of high relevance in
accelerators for its link with beam impedance and for RF applications,
including notions r... | 2006.02842v1 |
2020-09-10 | Solid-state Li-ion batteries operating at room temperature using new borohydride argyrodite electrolytes | Using a new class of (BH4)- substituted argyrodite Li6PS5Z0.83(BH4)0.17, (Z =
Cl, I) solid electrolyte, Li-metal solid-state batteries operating at room
temperature have been developed. The cells were made by combining the modified
argyrodite with an In-Li anode and two types of cathode: an oxide, LixMO2 (M =
1/3Ni, 1/... | 2009.04779v1 |
2000-04-08 | Electrical Conductivity in Magnesium-Doped Al_2 O_3 Crystal at Moderate Temperatures | AC and DC electrical measurements between 273 and 800 K were used to
characterize the electrical conductivity of Al_2 O_3:Mg single crystals
containing [Mg]^{0} center. At low fields contacts are blocking. At high
fields, electrical current flows steadily through the sample and the I-V
characteristic corresponds to a d... | 0004123v1 |
2001-07-13 | Superconductivity in the Correlated Pyrochlore Cd_2Re_2O_7 | We report the observation of superconductivity in high-quality
Cd$_2$Re$_2$O$_7$ single crystals with room-temperature pyrochlore structure.
Resistivity and ac susceptibility measurements establish an onset transition
temperature T$_c^{onset}$ = 1.47 K with transition width $\Delta$T$_c$ = 0.25
K. In applied magnetic f... | 0107309v3 |
2002-03-12 | Magnetoresistances observed by decomposition of the magnetic moment in La1-xCaxMnO3 films | A ferromagnetic phase, characterized by electron carriers and a high
temperature colossal magnetoresistance (HTCMR) dependent on the magnetic
moment, and a semiconducting phase, characterized by hole carriers and a low
temperature CMR (LTCMR), are observed in La$_{1-x}$Ca$_{x}$MnO$_3$ thin films
by the van der Pauw met... | 0203245v2 |
2004-01-20 | A New Approach to the Josephson Effect | We introduce a new approach to the Josephson effect in SIS tunnel junctions.
The Josephson coupling energy is calculated from the overlap of real space
Cooper pair wavefunctions in two superconductors through an insulating barrier.
It is shown that the Josephson tunneling is limited by the size of the Cooper
pair and i... | 0401374v2 |
2008-05-12 | Influence of sintering temperature on resistivity, magnetoresistance and thermopower of La0.67Ca0.33MnO3 | A systematic investigation of La0.67Ca0.33MnO3 manganites has been
undertaken, mainly to understand the influence of varying crystallite size
(nanometer range) on electrical resistivity, magnetic susceptibility and
thermoelectric power. The materials were prepared by the sol-gel method of
sintering at four different te... | 0805.1663v1 |
2008-09-12 | Two insulating phases in compressed Pr1-xCaxMnO3 thin films | The temperature dependent resistivity of two Pr1-xCaxMnO3 (x=0.5 and 0.4)
thin films grown on LaAlO3 has been studied as a function of hydrostatic
pressure (up to 2.5 GPa) and magnetic field (up to 9T). Both samples show a
monotonic decrease in the resistivity with an increase in pressure,
corresponding to a change of ... | 0809.2184v1 |
2008-10-28 | Electrical properties of boron-doped MWNTs synthesized by hot-filament chemical vapor deposition | We have synthesized a large amount of boron-doped multiwalled carbon
nanotubes (MWNTs) by hot-filament chemical vapor deposition. The synthesis was
carried out in a flask using a methanol solution of boric acid as a source
material. The scanning electron microscopy, transmission electron microscopy,
and micro-Raman spe... | 0810.4971v1 |
2011-06-15 | An Analytical Approach for Memristive Nanoarchitectures | As conventional memory technologies are challenged by their technological
physical limits, emerging technologies driven by novel materials are becoming
an attractive option for future memory architectures. Among these technologies,
Resistive Memories (ReRAM) created new possibilities because of their
nano-features and ... | 1106.2927v2 |
2013-02-05 | Graphene-Ferroelectric Hybrid Structure for Flexible Transparent Electrodes | Graphene has exceptional optical, mechanical and electrical properties,
making it an emerging material for novel optoelectronics, photonics and for
flexible transparent electrode applications. However, the relatively high sheet
resistance of graphene is a major constrain for many of these applications.
Here we propose ... | 1302.0993v1 |
2013-03-11 | Crystals, magnetic and electronic properties of a new ThCr2Si2-type BaMn2Bi2 and K-doped compositions | This is a report on the new 122 ternary transition-metal pnictide of
BaMn2Bi2, which is crystallized from bismuth flux. BaMn2Bi2 adopts
ThCr2Si2-type structure (I4/mmm) with a = 4.4902(3) {\AA} and c = 14.687(1)
{\AA}; it is antiferromagnetic with anisotropic magnetic susceptibility and
semiconducting with a band gap o... | 1303.2695v2 |
2015-02-09 | Surface-state-dominated transport in crystals of the topological crystalline insulator In-doped Pb$_{1-x}$Sn$_x$Te | Three-dimensional topological insulators and topological crystalline
insulators represent new quantum states of matter, which are predicted to have
insulating bulk states and spin-momentum-locked gapless surface states.
Experimentally, it has proven difficult to achieve the high bulk resistivity
that would allow surfac... | 1502.02696v1 |
2016-04-20 | Magnetoresistance and Shubnikov-de Hass oscillation in YSb | YSb crystals are grown and the transport properties under magnetic field are
measured. The resistivity exhibits metallic behavior under zero magnetic field
and the low temperature resistivity shows a clear upturn once a moderate
magnetic field is applied. The upturn is greatly enhanced by increasing
magnetic field, fin... | 1604.05912v2 |
2016-04-06 | Structural characterization of APPJ treated Bismaleimide coatings and heat treated Titania-BMI | Bismaleimide (BMI) are thermosetting polymers mainly used in aerospace
applications having properties of dimensional stability, low shrinkage,
chemical resistance, fire resistance, good mechanical properties and high
resistance against various solvents, acids, and water. BMI is commercially
available as Homide 250. BMI... | 1604.07297v1 |
2016-06-27 | Structural and electrical properties of Sn substituted double sintering derived Ni-Zn ferrite | The Sn substituted Ni-Zn ferrites were synthesized by the standard double
sintering technique using nano powders of nickel oxide (NiO), zinc oxide (ZnO),
iron oxide (Fe2O3) and tin oxide (SnO2). The structural and electrical
properties have been investigated by the X-ray diffraction, scanning electron
microscopy, DC re... | 1606.08118v1 |
2017-02-18 | Scaling limits of graphene nanoelectrodes | Graphene is an ideal material for fabricating atomically thin nanometre
spaced electrodes. Recently, carbon-based nanoelectrodes have been employed to
create single-molecule transistors and phase change memory devices. In spite of
the significant recent interest in their use in a range of nanoscale devices
from phase c... | 1702.05668v1 |
2019-09-23 | Nanoscale ballistic diodes made of polar materials for amplification and generation of radiation in 10 THz-range | We investigate ultra-high frequency electrical properties of nanoscale
$n^+$-$i$-$n^+$ diodes made of polar semiconductors. The calculations show that
the coupling between optical vibrations of the lattice and the ballistic
electrons strongly modifies and enhances the time-of-flight effects giving rise
to narrow resona... | 1909.10185v1 |
2019-12-20 | Electron-phonon interaction and zero-field charge carrier transport in the nodal-line semimetal ZrSiS | We study electron-phonon interaction and related transport properties of
nodal-line semimetal ZrSiS using first-principles calculations. We find that
ZrSiS is characterized by a weak electron-phonon coupling on the order of 0.1,
which is almost energy independent. The main contribution to the
electron-phonon coupling o... | 1912.09832v2 |
2015-04-06 | Gate-tunable Memristive Phenonmena Mediated by Grain Boundaries in Single Layer MoS2 | Continued progress in high speed computing depends on breakthroughs in both
materials synthesis and device architectures. The performance of logic and
memory can be enhanced significantly by introducing a memristor, a two terminal
device with internal resistance that depends on the history of the external
bias voltage.... | 1504.01416v1 |
2020-12-09 | Potassium-Doped Para-Terphenyl: Structure, Electrical Transport Properties and Possible Signatures of a Superconducting Transition | Preliminary evidence for the occurrence of high-Tc superconductivity in
alkali-doped organic materials, such as potassium-doped p-terphenyl (KPT), were
recently obtained by magnetic susceptibility measurements and by the opening of
a large superconducting gap as measured by ARPES and STM techniques. In this
work, KPT s... | 2012.04899v1 |
2020-12-23 | Direct observation of the electrically triggered Insulator-Metal transition in V3O5 far below the transition temperature | Resistive switching is one of the key phenomena for applications such as
nonvolatile memories or neuromorphic computing. V3O5, a compound of the
vanadium oxide Magn\'eli series, is one of the rare materials to exhibit an
insulator-metal transition (IMT) above room temperature (Tc ~ 415 K). Here we
demonstrate both stat... | 2012.13009v1 |
2021-02-10 | Current-limiting amplifier for high speed measurement of resistive switching data | Resistive switching devices, important for emerging memory and neuromorphic
applications, face significant challenges related to control of delicate
filamentary states in the oxide material. As a device switches, its rapid
conductivity change is involved in a positive feedback process that would lead
to runaway destruc... | 2102.05770v1 |
2021-04-13 | Negative Differential Resistance in Carbon-Based Nanostructures | Nonlinear electrical properties, such as negative differential resistance
(NDR), are essential in numerous electrical circuits, including memristors.
Several physical origins have been proposed to lead to the NDR phenomena in
semiconductor devices in the last more than half a century. Here, we report NDR
behavior forma... | 2104.06337v2 |
2021-05-17 | Enhancement of the superconductivity and quantum metallic state in the thin film of superconducting Kagome metal KV$_3$Sb$_5$ | Recently V-based Kagome metal attracted intense attention due to the
emergence of superconductivity in the low temperature. Here we report the
fabrication and physical investigations of the high quality single-crystalline
thin films of the Kagome metal KV$_3$Sb$_5$. For the sample with the thickness
of about 15 nm, the... | 2105.07732v1 |
2021-06-28 | Superconductivity in an extreme strange metal | Some of the highest-transition-temperature superconductors across various
materials classes exhibit linear-in-temperature `strange metal' or `Planckian'
electrical resistivities in their normal state. It is thus believed by many
that this behavior holds the key to unlock the secrets of high-temperature
superconductivit... | 2106.14849v2 |
2022-01-28 | Factors that control stability, variability, and reliability issues of endurance cycle in ReRAM devices: a phase field study | The morphological evolution of the conducting filament (CF) predominantly
controls the electric response of the resistive random access memory (ReRAM)
devices. However, the parameters -- in terms of the material and the processing
-- which control the growth of such CF are plenty. Extending the phase field
technique fo... | 2201.12304v2 |
2022-07-03 | An Atomistic Modelling Framework for Valence Change Memory Cells | We present a framework dedicated to modelling the resistive switching
operation of Valence Change Memory (VCM) cells. The method combines an
atomistic description of the device structure, a Kinetic Monte Carlo (KMC)
model for the creation and diffusion of oxygen vacancies in the central oxide
under an external field, a... | 2207.01095v1 |
2023-06-16 | Piezo-resistive pressure sensor based on CVD-grown ZnO nanowires on Polyethylene Tetrathalate substrate | Recent developments in the domain of electronic materials and devices have
attracted the interest of researchers toward flexible and printable electronic
components like organic transistors, printable electrodes and sensors. Zinc
Oxide (ZnO) nanowires (NWs) possess a number of excellent properties like high
mobility, l... | 2307.13805v1 |
2023-10-22 | Microstructure evolution and characteristics of laser-clad lightweight refractory NbxMo$_{0.5}$Ti$_{1.5}$Ta$_{0.2}$Cr high-entropy alloy | Lightweight refractory high-entropy alloy coatings (RHEAcs) of
NbxMo$_{0.5}$Ti$_{1.5}$Ta$_{0.2}$Cr (where $x=$ 1, 1.3, 1.5, and 2) were
fabricated on the surface of 316L stainless steel using laser cladding (LC)
technology. A comprehensive study was conducted to elucidate the effect of Nb
content on the microstructure,... | 2310.14223v1 |
2019-08-16 | Scaling Analysis of Anomalous Hall Resistivity in the Co$_{2}$TiAl Heusler Alloy | A comprehensive magnetotransport study including resistivity ($\rho_{xx}$) at
various fields, isothermal magnetoresistance and Hall resistivity ($\rho_{xy}$)
has been carried out at different temperatures on the Co$_{2}$TiAl Heusler
alloy. Co$_{2}$TiAl alloy shows a paramagnetic (PM) to ferromagnetic (FM)
transition be... | 1908.05974v1 |
2009-08-20 | Magnetism, Superconductivity and Stoichiometry in Single Crystals of Fe1+y(Te1-xSx)z | We report synthesis of high quality Fe1+y(Te1-xSx)z single crystals and a
comprehensive study of structural, magnetic and transport properties. There is
high sensitivity to material stoichiometry which includes vacancies on the
Te(S) site. Our results reveal competition and coexistence of magnetic order
and percolative... | 0908.3011v1 |
2020-11-20 | Phonons, electrons and thermal transport in Planckian high T$_c$ materials | The room temperature thermal diffusivity of high T$_c$ materials is dominated
by phonons. This allows the scattering of phonons by electrons to be discerned.
We argue that the measured strength of this scattering suggests a converse
Planckian scattering of electrons by phonons across the room temperature phase
diagram ... | 2011.10466v2 |
2017-08-10 | Zero resistance from one atmosphere to the pressure of earth's outer core in a superconducting high entropy alloy | We report the observation of extraordinarily robust zero-resistance
superconductivity in the pressurized (TaNb)0.67(HfZrTi)0.33 high entropy alloy
- a new kind of material with a body-centered cubic crystal structure made from
five randomly distributed transition metal elements. The transition to
superconductivity (TC)... | 1708.03146v2 |
2020-05-16 | Electric-field induced strange metal states and possible high-temperature superconductivity in hydrogenated graphitic fibers | In this work, we have studied the effects from increasing the strength of the
applied electric field on the charge transport of hydrogenated graphitic
fibers. Resistivity measurements were carried out for direct currents in the nA
- mA range and for temperatures from 1.9 K to 300 K. The high-temperature
non-ohmic volta... | 2005.07885v1 |
2021-09-28 | Development of high-rate capable and ultra-low mass Resistive Plate Chamber with Diamond-Like Carbon | A new type of resistive plate chamber (RPC) is under development using
thin-film resistive electrodes based on diamond-like carbon (DLC). Planned to
be put on the path of high-intensity low-momentum muon beam of the MEG II
experiment, this detector is required to be high-rate capable and ultra-low
mass. Using a prototy... | 2109.13525v1 |
2014-02-06 | High-performance ferroelectric memory based on fully patterned tunnel junctions | In tunnel junctions with ferroelectric barriers, switching the polarization
direction modifies the electrostatic potential profile and the associated
average tunnel barrier height. This results in strong changes of the tunnel
transmission and associated resistance. The information readout in
ferroelectric tunnel juncti... | 1402.1289v1 |
2021-07-02 | Topological surface conduction in Kondo insulator YbB$_{12}$ | Kondo insulators have recently aroused great interest because they are
promising materials that host a topological insulator state caused by the
strong electron interactions. Moreover, recent observations of the quantum
oscillations in the insulating state of Kondo insulators have come as a great
surprise. Here, to inv... | 2107.00912v2 |
2021-07-22 | Quantum oscillations in 2D insulators induced by graphite gates | We demonstrate a mechanism for magnetoresistance oscillations in insulating
states of two-dimensional (2D) materials arising from the interaction of the 2D
layer and proximal graphite gates. We study a series of devices based on
different two-dimensional systems, including mono- and bilayer Td-WTe2,
angle-aligned MoTe2... | 2107.10430v2 |
2014-11-10 | Low carrier concentration crystals of the topological insulator Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$: a magnetotransport study | In 3D topological insulators achieving a genuine bulk-insulating state is an
important research topic. Recently, the material system
(Bi,Sb)$_{2}$(Te,Se)$_{3}$ (BSTS) has been proposed as a topological insulator
with high resistivity and a low carrier concentration (Ren \textit{et al.}
\cite{Ren2011}). Here we present ... | 1411.2479v2 |
2022-05-20 | Resistivity and Thermal Conductivity of an Organic Insulator beta'-EtMe3Sb[Pd(dmit)2]2 | A finite residual linear term in the thermal conductivity at zero temperature
in insulating magnets indicates the presence of gapless excitations of
itinerant quasiparticles, which has been observed in some candidate materials
of quantum spin liquids (QSLs). In the organic triangular insulator
beta'-EtMe3Sb[Pd(dmit)2]2... | 2205.10039v1 |
2022-09-17 | Superfunctional high-entropy alloys and ceramics by severe plastic deformation | High-entropy alloys and ceramics containing at least five principal elements
have recently received high attention for various mechanical and functional
applications. The application of severe plastic deformation (SPD), particularly
the high-pressure torsion (HPT) method, combined with the CALPHAD and
first-principles ... | 2209.08291v3 |
2016-06-10 | Short channel effects in graphene-based field effect transistors targeting radio-frequency applications | Channel length scaling in graphene field effect transistors (GFETs) is key in
the pursuit of higher performance in radio frequency electronics for both rigid
and flexible substrates. Although two-dimensional (2D) materials provide a
superior immunity to Short Channel Effects (SCEs) than bulk materials, they
could domin... | 1606.03264v2 |
2007-01-29 | Long-term Correlations and 1/f^alpha Noise in the Steady States of Multi-Species Resistor Networks | We introduce a multi-species network model which describes the resistance
fluctuations of a resistor in a non-equilibrium stationary state. More
precisely, a thin resistor characterized by a 1/f^alpha resistance noise is
described as a two-dimensional network made by different species of elementary
resistors. The resis... | 0701712v1 |
2008-06-26 | Different resistivity response to spin density wave and superconductivity at 20 K in $Ca_{1-x}Na_xFe_2As_2$ | We report that intrinsic transport and magnetic properties, and their
anisotropy from high quality single crystal $CaFe_2As_2$. The resistivity
anisotropy ($\rho_c/\rho_{ab}$) is $\sim 50 $, and less than 150 of
$BaFe_2As_2$, which arises from the strong coupling along c-axis due to an
apparent contraction of about 0.1... | 0806.4279v1 |
2014-02-25 | Measurement of junction conductance and proximity effect at superconductor/semiconductor junctions | The superconducting proximity effect has played an important role in recent
work searching for Majorana modes in thin semiconductor devices. Using
transport measurements to quantify the changes in the semiconductor caused by
the proximity effect provides a measure of dynamical processes such as
screening and scattering... | 1402.6055v1 |
2018-08-14 | Impurities and Defects in Mott Systems | Disorder has intriguing consequences for correlated electronic materials,
which include several families of high-temperature superconductors and
resistive switching systems. We address the question of why strongly correlated
d-wave superconductors, such as the cuprates, prove to be surprisingly robust
against the intro... | 1808.04767v1 |
2023-01-10 | Microstructuring YbRh2Si2 for resistance and noise measurements down to ultra-low temperatures | The discovery of superconductivity in the quantum critical Kondo-lattice
system YbRh2Si2 at an extremely low temperature of 2 mK has inspired efforts to
perform high-resolution electrical resistivity measurements down to this
temperature range in highly conductive materials. Here we show that control
over the sample ge... | 2301.03928v1 |
2024-05-06 | Bayesian optimization for stable properties amid processing fluctuations in sputter deposition | We introduce a Bayesian optimization approach to guide the sputter deposition
of molybdenum thin films, aiming to achieve desired residual stress and sheet
resistance while minimizing susceptibility to stochastic fluctuations during
deposition. Thin films are pivotal in numerous technologies, including
semiconductors a... | 2405.03092v1 |
2023-04-06 | Performance Analysis of DNA Crossbar Arrays for High-Density Memory Storage Applications | Deoxyribonucleic acid (DNA) has emerged as a promising building block for
next-generation ultra-high density storage devices. Although DNA has high
durability and extremely high density in nature, its potential as the basis of
storage devices is currently hindered by limitations such as expensive and
complex fabricatio... | 2304.14269v1 |
2023-11-09 | Signature of superconductivity in pressurized La$_4$Ni$_3$O$_{10}$ | The discovery of high-temperature superconductivity near 80 K in bilayer
nickelate La$_3$Ni$_2$O$_7$ under high pressures has renewed the exploration of
superconducting nickelate in bulk materials. The extension of superconductivity
in other nickelates in a broader family is also essential. Here, we report the
experime... | 2311.05453v1 |
2024-04-29 | Thermoelectric transport properties of the quasi-one-dimensional dimer-Mott insulator $β'$-(BEDT-TTF)$_2$ICl$_2$ | Low-dimensional materials, in which the electronic and transport properties
are drastically modified in comparison to those of three-dimensional bulk
materials, yield a key class of thermoelectric materials with high conversion
efficiency. Among such materials, the organic compounds may serve peculiar
properties owing ... | 2404.19137v1 |
2021-12-28 | Review of Transition-Metal Diboride Thin Films | We review the thin film growth, chemistry, and physical properties of Group
4-6 transition-metal diboride (TMB2) thin films with AlB2-type crystal
structure (Strukturbericht designation C32). Industrial applications are
growing rapidly as TMB2 begin competing with conventional refractory ceramics
like carbides and nitr... | 2112.14099v1 |
2016-06-10 | On the search for the chiral anomaly in Weyl semimetals: The negative longitudinal magnetoresistance | Recently, the existence of massless chiral (Weyl) fermions has been
postulated in a class of semi-metals with a non-trivial energy dispersion.These
materials are now commonly dubbed Weyl semi-metals (WSM).One predicted property
of Weyl fermions is the chiral or Adler-Bell-Jackiw anomaly, a chirality
imbalance in the pr... | 1606.03389v1 |
2011-10-07 | Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime | A common issue in low temperature measurements of enhancement-mode
metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low
electron density regime is the high contact resistance dominating the device
impedance. In that case a voltage bias applied across the source and drain
contact of a Hall bar MOSF... | 1110.1418v1 |
2013-04-01 | Novel Bismaleimide Resin/Silsesquioxane and Titania Nanocomposites by the Sol-Gel Process: the Preparation, Morphology, Thermal and Thermo-mechanical Properties | Bismaleimide(BMI) resin/silsesquioxane or titania nanocomposites were
synthesized from bismaleimide resin and SiO3/2 or TiO2 via the sol-gel process
of N-{\gamma}-triethoxylsilylpropyl-maleamic acid (TESPMA) or
tetrabutyltitanate (Ti(OnBu)4, TBT), respectively, in the presence of the
AP-BMI prepolymers. These nanocompo... | 1304.0288v1 |
2016-04-19 | Observation of spin Seebeck contribution to the transverse thermopower in Ni-Pt and MnBi-Au bulk nanocomposites | Transverse thermoelectric devices produce electric fields perpendicular to an
incident heat flux. Classically, this process is driven by the Nernst effect in
bulk solids, wherein a magnetic field generates a Lorentz force on thermally
excited electrons. The spin Seebeck effect (SSE) also produces
magnetization-dependen... | 1604.05626v3 |
2016-01-18 | Large magnetoresistance in LaBi: origin of field-induced resistivity upturn and plateau in compensated semimetals | The discovery of non-magnetic extreme magnetoresistance (XMR) materials has
induced great interests because the XMR phenomenon challenges our understanding
of how a magnetic field can alter electron transport in semimetals. Among XMR
materials, the LaSb shows XMR and field-induced exotic behaviors but it seems
to lack ... | 1601.04618v2 |
2003-03-14 | Microwave performance of high-density bulk MgB2 | We have performed microwave measurements on superconducting
hot-isostatically- pressed (HIPed) bulk MgB2 using a parallel-plate resonator
technique. The high density and strength of the HIPed material allowed
preparation of samples with mirror-like surfaces for microwave measurements.
The microwave surface resistance d... | 0303283v1 |
2006-02-23 | Quantum Metallicity on the High-Field Side of the Superconductor-Insulator Transition | We investigate ultrathin superconducting TiN films, which are very close to
the localization threshold. Perpendicular magnetic field drives the films from
the superconducting to an insulating state, with very high resistance. Further
increase of the magnetic field leads to an exponential decay of the resistance
towards... | 0602557v2 |
2013-09-18 | Pressure-Induced Superconductivity in Mineral Calaverite AuTe2 | The pressure dependences of resistivity and ac susceptibility have been
measured in the mineral calaverite AuTe$_2$. Resistivity clearly shows a
first-order phase transition into a high-pressure phase, consistent with the
results of a previous structural analysis. We found zero resistivity and a
diamagnetic shielding s... | 1309.4827v2 |
2018-03-07 | Saturation and negative temperature coefficient of electrical resistivity in liquid iron-sulfur alloys at high densities from first principles calculations | We report results on electronic transport properties of liquid Fe-S alloys at
conditions of planetary cores, computed by first-principle techniques in the
Kubo-Greenwood formalism. We describe a combined effect of resistivity
saturation due to temperature, compression, and chemistry by comparing the
electron mean free ... | 1803.02649v1 |
2018-10-03 | On the temperature scaling behaviour of the linear magnetoresistance observed in high-temperature superconductors | An analytical model invoking variations in the charge-carrier density is used
to generate magnetoresistance curves that are almost indistinguishable from
those produced by sophisticated numerical models. This demonstrates that,
though disorder is pivotal in causing linear magnetoresistance, the form of the
magnetoresis... | 1810.01998v3 |
2020-04-17 | High-pressure characterization of multifunctional CrVO4 | The structural stability and physical properties of CrVO4 under compression
were studied by X-ray diffraction, Raman spectroscopy, optical absorption,
resistivity measurements, and ab initio calculations up to 10 GPa.
High-pressure X-ray diffraction and Raman measurements show that CrVO4
undergoes a phase transition fr... | 2004.08072v1 |
2020-08-28 | High-Bandwidth, Variable-Resistance Differential Noise Thermometry | We develop Johnson noise thermometry applicable to mesoscopic devices with
variable source impedance with high bandwidth for fast data acquisition. By
implementing differential noise measurement and two-stage impedance matching,
we demonstrate noise measurement in the frequency range 120-250 MHz with a wide
sample resi... | 2008.12739v1 |
2014-09-19 | Fluorine doping: A feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components | N-type doping of high-resistance wide bandgap semiconductors, wurtzite
high-Mg-content MgxZn1-xO for instance, has always been a fundamental
application-motivated research issue. Herein, we report a solution to enhancing
the conductivity of high-resistance Mg0.51Zn0.49O active components, which has
been reliably achiev... | 1409.5657v2 |
2021-11-03 | Resistive switching in HfO2-x/La0.67Sr0.33MnO3 heterostructure: An intriguing case of low H-field susceptibility of an E-field controlled active interface | High-performance non-volatile resistive random access memories (ReRAM) and
their small stimuli control are of immense interest for high-speed computation
and big-data processing in the emergent Internet of Things (IOT) arena. Here,
we examine the resistive switching (RS) behavior in growth controlled
HfO2/La0.67Sr0.33M... | 2111.02476v1 |
2002-09-26 | Kapitza resistance at the liquid solid interface | Using equilibrium and nonequilibrium molecular dynamics simulations, we
determine the Kapitza resistance (or thermal contact resistance) at a model
liquid solid interface. The Kapitza resistance (or the associated Kapitza
length) can reach appreciable values when the liquid does not wet the solid.
The analogy with the ... | 0209607v1 |
2008-02-06 | On the calculation of Schottky contact resistivity | This numerical study examines the importance of self-consistently accounting
for transport and electrostatics in the calculaiton of semiconductor/metal
Schottky contact resistivity. It is shown that ignoring such self-consistency
results in significant under-estimation of the contact resistivity. An explicit
numerical ... | 0802.0729v1 |
2016-12-17 | Upper critical field, pressure-dependent superconductivity and electronic anisotropy of Sm$_4$Fe$_2$As$_2$Te$_{1-x}$O$_{4-y}$F$y$ | We present a detailed study of the electrical transport properties of a
recently discovered iron-based superconductor:
Sm$_4$Fe$_2$As$_2$Te$_{0.72}$O$_{2.8}$F$_{1.2}$. We followed the temperature
dependence of the upper critical field by resistivity measurement of single
crystals in magnetic fields up to 16 T, oriented... | 1612.05792v1 |
2019-07-28 | Field-dependent nonlinear surface resistance and its optimization by surface nano-structuring in superconductors | We propose a theory of nonlinear surface resistance of a dirty superconductor
in a strong radio-frequency (RF) field, taking into account magnetic and
nonmagnetic impurities, finite quasiparticle lifetimes, and a thin
proximity-coupled normal layer characteristic of the oxide surface of many
materials. The Usadel equat... | 1907.12040v1 |
2019-08-08 | Substrate induced nanoscale resistance variation in epitaxial graphene | Graphene, the first true two-dimensional material still reveals the most
remarkable transport properties among the growing class of two-dimensional
materials. Although many studies have investigated fundamental scattering
processes, the surprisingly large variation in the experimentally determined
resistances associate... | 1908.02956v2 |
2021-01-16 | Optical Tuning of Resistance Switching in Polycrystalline Gallium Phosphide Thin Films | The nanoscale resistive switching characteristics of gallium phosphide (GaP)
thin films directly grown on Si are investigated as a function of incident
light. Firstly, as-grown GaP films show a high RON/ROFF (~10^4), shown to arise
from the formation of conductive channels along the grain boundaries. It is
proposed tha... | 2101.06538v1 |
2020-11-03 | Switchable domains in point contacts based on transition metal tellurides | We report resistive switching in voltage biased point contacts (PCs) based on
series of van der Waals transition metals tellurides (TMTs) such as MeTe2
(Me=Mo, W) and TaMeTe4 (Me= Ru, Rh, Ir). The switching occurs between a low
resistive "metallic-type" state, which is the ground state, and a high
resistive "semiconduc... | 2011.01569v2 |
2020-11-30 | Above-room-temperature giant thermal conductivity switching in spintronic multilayer | Thermal switching provides an effective way for active heat flow control,
which has recently attracted increasing attention in terms of nanoscale thermal
management technologies. In magnetic and spintronic materials, the thermal
conductivity depends on the magnetization configuration: this is the
magneto-thermal resist... | 2011.14558v1 |
2022-03-01 | Cu-doping effects on the ferromagnetic semimetal CeAuGe | We present a study of Cu-substitution effects in 4f-Ce intermetallic compound
CeAu1-xCuxGe, with potentially unusual electronic states, in the whole
concentration range (x = 0.0 - 1.0). The parent CeAuGe compound, crystallizing
in a non-centrosymmetric hexagonal structure, is a ferromagnetic semimetal with
Curie temper... | 2203.00335v1 |
2022-06-13 | The two-dimensional metallic triangular lattice antiferromagnet CeCd3P3 | Single crystals of $R$Cd$_{3}$P$_{3}$ ($R$ = La and Ce) have been
investigated by magnetization, electrical resistivity, Hall coefficient, and
specific heat. Magnetization measurements of CeCd$_{3}$P$_{3}$ demonstrate
clear quasi-2D magnetic behavior. Electrical resistivity and Hall coefficient
measurements suggest tha... | 2206.06366v1 |
2023-01-13 | Image-Force Barrier Lowering of Schottky Barriers in Two-Dimensional Materials as a Function of Metal Contact Angle | Two-dimensional (2D) semiconductors are a promising solution for the
miniaturization of electronic devices and for the exploration of novel physics.
However, practical applications and demonstrations of physical phenomena are
hindered by high Schottky barriers at the contacts to 2D semiconductors. While
the process of ... | 2301.05373v2 |
2023-12-07 | Demonstration of high-impedance superconducting NbRe Dayem bridges | Here we demonstrate superconducting Dayem-bridge weak-links made of different
stoichiometric compositions of NbRe. Our devices possess a relatively high
critical temperature, normal-state resistance, and kinetic inductance. In
particular, the high kinetic inductance makes this material a good alternative
to more conven... | 2312.04331v2 |
2019-01-11 | A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields | Spintronic devices based on antiferromagnetic (AFM) materials hold the
promise of fast switching speeds and robustness against magnetic fields.
Different device concepts have been predicted and experimentally demonstrated,
such as low-temperature AFM tunnel junctions that operate as spin-valves, or
room-temperature AFM... | 1901.03551v1 |
2020-07-09 | Frequency domain measurements of thermal properties using 3omega-Scanning Thermal Microscope in a vacuum environment | Material thermal properties characterization at nanoscales remains a
challenge even if progresses were done in developing specific characterization
techniques like the Scanning Thermal Microscopy (SThM). In the present work, we
propose a detailed procedure based on the combined use of a SThM probe
characterization and ... | 2007.04632v1 |
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