publicationDate stringlengths 10 10 | title stringlengths 17 233 | abstract stringlengths 20 3.22k | id stringlengths 9 12 |
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2021-02-04 | Enhancing plasticity in high-entropy refractory ceramics via tailoring valence electron concentration | Bottom-up design of high-entropy ceramics is a promising approach for
realizing materials with unique combination of high hardness and
fracture-resistance at elevated temperature. This work offers a simple yet
fundamental design criterion - valence electron concentration (VEC) > ~9.5
e-/f.u. to populate bonding metalli... | 2102.02455v2 |
2020-09-08 | High-Pressure Torsion Deformation Induced Phase Transformations and Formations: New Material Combinations and Advanced Properties | Heavy plastic shear deformation at relatively low homologous temperatures is
called high-pressure torsion (HPT) deformation, which is one method of severe
plastic deformation (SPD). The aim of the paper is to give an overview of a new
processing approach which permits the generation of innovative metastable
materials a... | 2009.03531v1 |
2023-12-08 | Low Resistance Ohmic Contact to P-type Monolayer WSe2 | Advanced microelectronics in the future may require semiconducting channel
materials beyond silicon. Two-dimensional (2D) semiconductors, characterized by
their atomically thin thickness, hold immense promise for high-performance
electronic devices at the nanometer scale with lower heat dissipation. One
challenge for a... | 2312.04849v1 |
2022-01-06 | Model-based quantitative methods to predict irradiation-induced swelling in alloys | Predicting volume swelling of structural materials in nuclear reactors under
high-dose neutron irradiations based on existing low-dose experiments or
irradiation data with high-dose-rate energetic particles has been a
long-standing challenge for safety evaluation and rapidly screening
irradiation-resistant materials in... | 2201.04958v1 |
2022-10-28 | An innovative materials design protocol for the development of novel refractory high-entropy alloys for extreme environments | In the quest of new materials that can withstand severe irradiation and
mechanical extremes for advanced applications (e.g. fission reactors, fusion
devices, space applications, etc), design, prediction and control of advanced
materials beyond current material designs become a paramount goal. Here, though
a combined ex... | 2210.16409v1 |
2023-02-07 | Effect of ZrB$_2$ additions on the thermal stability of polycrystalline diamond | This study investigates the effect of ZrB$_2$ additions on the
microstructure, thermal stability, and thermo-mechanical wear behaviour of
polycrystalline diamond. Following high-pressure high-temperature (HPHT)
sintering, the ZrB$_2$-PCD material showed a full conversion of the binder
phase to cobalt-boride (Co2B and C... | 2302.03464v1 |
2016-06-14 | Origin of the metal-to-insulator crossover in cuprate superconductors | Superconductivity in cuprates peaks in the doping regime between a metal at
high p and an insulator at low p. Understanding how the material evolves from
metal to insulator is a fundamental and open question. Early studies in high
magnetic fields revealed that below some critical doping an insulator-like
upturn appears... | 1606.04491v1 |
2020-05-30 | Linearity and rate capability measurements of RPC with semi-insulating crystalline electrodes operating in avalanche mode | The intrinsic rate capability and the ageing properties of the Resistive
Plate Chambers are closely related to the electrodes material and to the
front-end electronics threshold. The development of a low noise pre-amplifier
led us to improve the intrinsic rate capability of High Pressure Laminate
(bakelite) up to $\sim... | 2006.00306v1 |
2016-06-17 | Manganite-based three level memristive devices with self-healing capability | We report on non-volatile memory devices based on multifunctional manganites.
The electric field induced resistive switching of
Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/n-Si devices is explored using different
measurement protocols. We show that using current as the electrical stimulus
(instead of standard voltage-controlled pro... | 1606.05401v1 |
2019-07-25 | Extraction of the short-range defect potential parameters from available experimental data on the graphene resistance | We consider a problem of obtaining information about the scattering
potentials of the monolayer graphene sample using available experimental data
on its resistance. We have in mind a development of the study describing
super-high mobility electrons in suspended samples without chemical doping. As
far as practical absen... | 1907.10894v1 |
2021-08-23 | Polarization and resistive switching in epitaxial 2 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ tunnel junctions | In the quest for reliable and power-efficient memristive devices,
ferroelectric tunnel junctions are being investigated as potential candidates.
CMOS-compatible ferroelectric hafnium oxides are at the forefront. However, in
epitaxial tunnel devices with thicknesses around ${\approx}$ 4 - 6 nm, the
relatively high tunne... | 2108.10373v1 |
2002-08-18 | Synthesis and physical properties of LiBC intermetallics | Polycrystalline samples of LiBC compounds, which were predicted as possible
candidate for high-Tc superconductivity, have been synthesised by a flux method
and investigated by means of electrical resistivity and magnetic
susceptibility. Scanning electron microscopy and X-ray diffraction patterns
showed a plate-like mor... | 0208346v2 |
2008-10-22 | Quantum resistance metrology in graphene | We have performed a metrological characterization of the quantum Hall
resistance in a 1 $\mu$m wide graphene Hall-bar. The longitudinal resistivity
in the center of the $\nu=\pm 2$ quantum Hall plateaus vanishes within the
measurement noise of 20 m$\Omega$ upto 2 $\mu$A. Our results show that the
quantization of these ... | 0810.4064v1 |
2011-02-14 | Coexistence of superconductivity and antiferromagnetism in single crystals $A_{0.8}Fe_{2-y}Se_2$ (A= K, Rb, Cs, Tl/K and Tl/Rb): evidence from magnetization and resistivity | We measure the resistivity and magnetic susceptibility in the temperature
range from 5 K to 600 K for the single crystals $A$Fe$_{2-y}$Se$_2$ ($A$ =
K$_{0.8}$, Rb$_{0.8}$, Cs$_{0.8}$, Tl$_{0.5}$K$_{0.3}$ and
Tl$_{0.4}$Rb$_{0.4}$). A sharp superconducting transition is observed in low
temperature resistivity and suscept... | 1102.2783v1 |
2012-08-15 | Two-dimensional electron-gas-like charge transport at magnetic Heusler alloy-SrTiO$_3$ interface | We report remarkably low residual resistivity, giant residual resistivity
ratio, free-electron-like Hall resistivity and high mobility ($\approx$ 10$^4$
cm$^2$V$^{-1}$s$^{-1}$) charge transport in epitaxial films of Co$_2$MnSi and
Co$_2$FeSi grown on (001) SrTiO$_3$. This unusual behavior is not observed in
films depos... | 1208.3099v2 |
2014-10-29 | Large time-dependent coercivity and resistivity modification under sustained voltage application in a Pt/Co/AlOx/Pt junction | The coercivity and resistivity of a Pt/Co/AlOx/Pt junction are measured under
sustained voltage application. High bias voltages of either polarity are
determined to cause a strongly enhanced, reversible coercivity modification
compared to low voltages. Time-resolved measurements show a logarithmic
development of the co... | 1410.8018v1 |
2017-06-29 | Effect of Anodizing Parameters on Corrosion Resistance of Coated Purified Magnesium | Magnesium and its alloys are being considered for biodegradable biomaterials.
However, high and uncontrollable corrosion rates have limited the use of
magnesium and its alloys in biological environments. In this research, high
purified magnesium (HP-Mg) was coated with stearic acid in order to improve the
corrosion res... | 1706.09547v1 |
2017-12-08 | Selective etching of PDMS: etching as a negative tone resist | In this work authors present for the first time how to apply the
additive-free, cured PDMS as a negative tone resist material, demonstrate the
creation of PDMS microstructures and test the solvent resistivity of the
created microstructures. The PDMS layers were 45 um and 100 um thick, the
irradiations were done with a ... | 1712.03119v1 |
2018-06-28 | Band-edge quasiparticles from electron phonon coupling and resistivity saturation | We address the problem of resistivity saturation observed in materials such
as the A-15 compounds. To do so, we calculate the resistivity for the
Hubbard-Holstein model in infinite spatial dimensions to second order in
on-site repulsion $U\leq D$ and to first order in (dimensionless)
electron-phonon coupling strength $... | 1806.11227v2 |
2019-06-15 | Unidirectional Synapse-Like Behavior of Zr/ZrO2-NT/Au Layered Structure | Zirconia nanotubular layer with an outer tube diameter 25 nm was synthesized
by potentiostatic anodization. The Zr/ZrO2-NT/Au memristive structure is
fabricated using stencil mask and magnetron sputtering techniques.
Current-voltage characteristics are measured in full cycles of resistive
switching with varying paramet... | 1906.06549v1 |
2019-06-25 | Compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors | In this letter, we design and demonstrate an improved MOCVD grown reverse
Al-composition graded contact layer to achieve low resistance contact to MOCVD
grown ultra-wide bandgap (UWBG) Al0.70Ga0.30N channel metal semiconductor
field-effect transistors (MESFETs). Increasing the thickness of the reverse
graded layer was ... | 1906.10270v2 |
2021-02-05 | Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs | We report a dramatic current reduction, or a resistance increase, by a few
orders of magnitude of two common-anode Au/Ti/pGaN Schottky junctions annealed
within a certain annealing condition window (600 - 700 oC, 1 - 4 min). Results
from similar common-anode Schottky junctions made of Au/p-GaN, Al/Ti/p-GaN and
Au/Ti/gr... | 2102.03418v1 |
2021-12-02 | Homes' law in holographic superconductor with linear-$T$ resistivity | Homes' law, $\rho_{s} = C \, \sigma_{DC} \, T_{c}$, is a universal relation
of superconductors between the superfluid density $\rho_{s}$ at zero
temperature, the critical temperature $T_{c}$ and the electric DC conductivity
$\sigma_{DC}$ at $T_c$. Experimentally, Homes' law is observed in high $T_c$
superconductors wit... | 2112.01153v2 |
2004-02-02 | Universal charge transport of the Mn oxides in the high temperature limit | We have found that various Mn oxides have the universal resistivity and
thermopower in the high temperature limit. The resistivities and thermopowers
of all the samples go toward constant values of 7$\pm$1 m$\Omega$cm and
$-79\pm$3 $\mu$V/K, which are independent of carrier density and crystal
structures. We propose th... | 0402032v1 |
2009-05-19 | Boosting electronic transport in carbon nanotubes by isotopic disorder | The current/voltage curve of metallic carbon nanotubes (CNTs) displays at
high bias a sudden increase of the resistivity due to the scattering of
electrons with phonons having an anomalously-high population (hot phonons).
Here, we show that it is possible to improve the electrical performances of
metallic CNTs by C13 i... | 0905.3034v1 |
2011-04-05 | Effect of uniaxial stress on low-frequency dispersion of dielectric constant in high-resistivity GaSe crystals | Low-frequency dielectric spectra of high-resistivity GaSe layered crystals
have been studied on the samples clamped between two insulating parallel plates
at frequencies up to 100 kHz. The measurements have been carried out at
different uniaxial stresses up to $2.4\times10^5$ Pa applied along the c-axis
normal to cryst... | 1104.0801v1 |
2017-12-08 | Selective etching of PDMS: etching as positive resist | Although, poly(dimethylsiloxane) (PDMS) is a widely used material in numerous
applications, such as micro- or nanofabrication, the method of its selective
etching has not been known up to now. In this work authors present two methods
of etching the pure, additive-free and cured PDMS as a positive resist
material.
To ... | 1712.03125v1 |
2021-04-14 | Inverse design of glass structure with deep graph neural networks | Directly manipulating the atomic structure to achieve a specific property is
a long pursuit in the field of materials. However, hindered by the disordered,
non-prototypical glass structure and the complex interplay between structure
and property, such inverse design is dauntingly hard for glasses. Here,
combining two c... | 2104.06632v3 |
2021-05-07 | Integrating superconducting van der Waals materials on paper substrates | Paper has the potential to dramatically reduce the cost of electronic
components. In fact, paper is 10 000 times cheaper than crystalline silicon,
motivating the research to integrate electronic materials on paper substrates.
Among the different electronic materials, van der Waals materials are
attracting the interest ... | 2105.03487v1 |
2016-01-17 | Resistivity plateau and extremely large magnetoresistance in NbAs2 and TaAs2 | In topological insulators (TIs), metallic surface conductance saturates the
insulating bulk resistance with de- creasing temperature, resulting in
resistivity plateau at low temperatures as a transport signature originating
from metallic surface modes protected by time reversal symmetry (TRS). Such
characteristic has b... | 1601.04239v1 |
2018-09-26 | Changes in the near edge X-ray absorption fine structure of hybrid organic-inorganic resists upon exposure | We report on the near edge X-ray absorption fine structure (NEXAFS)
spectroscopy of hybrid organic-inorganic resists. These materials are
nonchemically amplified systems based on Si, Zr, and Ti oxides, synthesized
from organically modified precursors and transition metal alkoxides by a
sol-gel route and designed for ul... | 1809.09916v1 |
2022-04-30 | A simple strategy to measure the contact resistance between metals and doped organic films | Charge injection from electrodes into doped organic films is a widespread
technology used in the majority of state-of-the-art organic semiconductor
devices. Although such interfaces are commonly considered to form Ohmic
contacts via strong band bending, an experiment that directly measures the
contact resistance has no... | 2205.00261v1 |
2018-01-30 | Novel circuit design for high-impedance and non-local electrical measurements of two-dimensional materials | Two-dimensional materials offer a novel platform for the development of
future quantum technologies. However, the electrical characterisation of
topological insulating states, non-local resistance and bandgap tuning in
atomically-thin materials, can be strongly affected by spurious signals arising
from the measuring el... | 1801.10135v1 |
2013-08-31 | Origin of defects responsible for charge transport in resistive random access memory based on hafnia | A promising candidate for universal memory, which would involve combining the
most favourable properties of both high-speed dynamic random access memory
(DRAM) and non-volatile flash memory, is resistive random access memory
(ReRAM). ReRAM is based on switching back and forth from a high-resistance
state (HRS) to a low... | 1309.0071v2 |
2020-09-26 | Optical imaging of strain-mediated phase coexistence during electrothermal switching in a Mott insulator | Resistive-switching -- the current-/voltage-induced electrical resistance
change -- is at the core of memristive devices, which play an essential role in
the emerging field of neuromorphic computing. This study is about resistive
switching in a Mott-insulator, which undergoes a thermally driven
metal-to-insulator trans... | 2009.12536v2 |
2023-10-01 | Elucidating Dynamic Conductive State Changes in Amorphous Lithium Lanthanum Titanate for Resistive Switching Devices | Exploration of novel resistive switching materials attracts attention to
replace conventional Si-based transistors and to achieve neuromorphic computing
that can surpass the limit of the current Von-Neumann computing for the time of
Internet of Things (IoT). Materials priorly used to serve in batteries have
demonstrate... | 2310.00543v1 |
2019-03-28 | First Operation of a Resistive Shell Liquid Argon Time Projection Chamber -- A new Approach to Electric-Field Shaping | We present a new technology for the shaping of the electric field in Time
Projection Chambers (TPCs) using a carbon-loaded polyimide foil. This
technology allows for the minimisation of passive material near the active
volume of the TPC and thus is capable to reduce background events originating
from radioactive decays... | 1903.11858v2 |
2023-02-24 | Antiferromagnetism of CeCd$_{0.67}$As$_{2}$ existing deep inside the narrow gap semiconducting state | Single crystals of $R$Cd$_{0.67}$As$_2$ ($R$ = La and Ce) have been
synthesized by high temperature ternary melt and their physical properties have
been explored by means of magnetization, specific heat, electrical resistivity,
Hall coefficient, and thermoelectric power measurements. $R$Cd$_{0.67}$As$_2$
compounds indi... | 2302.12451v1 |
2003-05-06 | High Magnetic Field Sensor Using LaSb2 | The magnetotransport properties of single crystals of the highly anisotropic
layered metal LaSb2 are reported in magnetic fields up to 45 T with fields
oriented both parallel and perpendicular to the layers. Below 10 K the
perpendicular magnetoresistance of LaSb2} becomes temperature independent and
is characterized by... | 0305116v1 |
2016-12-30 | CdTe and CdZnTe Crystal Growth and Production of Gamma Radiation Detectors | Bridgman CdTe and CdZnTe crystal growth, with cadmium vapor pressure control,
is applied to production of semiconductor gamma radiation detectors. Crystals
are highly donor doped and highly electrically conducting. Annealing in
tellurium vapors transforms them into a highly compensated state of high
electrical resistan... | 1612.09571v1 |
2015-06-25 | Metallic multilayers for X-band Bragg reflector applications | We present a structural and high frequency (8.72GHz) electrical
characterization of sputter deposited Ti/W, Ti/Ru and Mo/Ti metallic
multilayers for potential application as acoustic Bragg reflectors. We prove
that all metallic multilayers comprised of different acoustic impedance metals
such as Ti, W, Mo are promising... | 1506.07702v1 |
2014-06-11 | Very high thermoelectric power factor in a Fe3O4/SiO2/p-type Si(100)heterostructure | The thermoelectric and transport properties of a Fe3O4/SiO2/p-Si(100)
heterostructure have been investigated between 100 and 300 K. Both Hall and
Seebeck coefficients change sign from negative to positive with increasing
temperature while the resistivity drops sharply due to tunneling of carriers
into the p-Si(100). Th... | 1406.2814v1 |
2002-10-10 | Effects of Pressure on Electron Transport and Local Structure of Manganites: Low to High Pressure Regime | The pressure dependence of the resistivity and structure of
La0.60Y0.07Ca0.33MnO3 has been explored in the pressure range from 1 atm to ~7
GPa. The metal to insulator transition temperature (TMI) was found to reach a
maximum and the resistivity achieves a minimum at ~3.8 GPa. Beyond this
pressure, TMI is reduced with a... | 0210220v2 |
2003-07-31 | Is Room Temperature Superconductivity in Carbon Nanotubes Too Wonderful to Believe? | It is well known that copper-based perovskite oxides rightly enjoy consensus
as high-temperature superconductors on the basis of two signatures: Meissner
effect and zero resistance. In contrast, I provide over twenty signatures for
room temperature superconductivity in carbon nanotubes. The one-dimensionality
of the na... | 0307770v3 |
2003-09-24 | High critical fields in MgB2 thin films with various resistivity values | In this paper, we analyze the upper critical field of four MgB2 thin films,
with different resistivity (between 5 to 50 mWcm) and critical temperature
(between 29.5 to 38.8 K), measured up to 28 Tesla. In the perpendicular
direction the critical fields vary from 13 to 24 T and we can estimate 42-57 T
range in other dir... | 0309543v1 |
2004-11-18 | Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO$_{3}$/SrTi$_{0.99}$Nb$_{0.01}$O$_{3}$ | Transport properties have been studied for a perovskite heterojunction
consisting of SrRuO$_{3}$ (SRO) film epitaxially grown on
SrTi$_{0.99}$Nb$_{0.01}$O$_{3}$ (Nb:STO) substrate. The SRO/Nb:STO interface
exhibits rectifying current-voltage ($I$-$V$) characteristics agreeing with
those of a Schottky junction composed ... | 0411474v1 |
2005-09-13 | Evidence for High-Temperature Superconductivity in Doped Laser-Processed Sr-Ru-O | We have discovered that samples of a new material produced by special
processing of crystals of Sr2RuO4 (which is known to be a triplet
superconductor with Tc values ~1.0-1.5K) exhibit signatures of
superconductivity (zero DC resistance and expulsion of magnetic flux) at
temperatures exceeding 200K. The special process... | 0509313v1 |
2006-05-04 | Threshold Resistance in the DC Josephson Effect | We show that SIS Josephson junctions have a threshold resistance, above which
the Josephson coupling and the supercurrents become extremely small, due to the
shrinking of the Cooper pair size during the Josephson tunneling. Accordingly,
the threshold resistance is smaller for higher Tc superconductors with small
Cooper... | 0605122v1 |
2007-04-03 | Scaling of Resistance and Electron Mean Free Path of Single-Walled Carbon Nanotubes | We present an experimental investigation on the scaling of resistance in
individual single walled carbon nanotube devices with channel lengths that vary
four orders of magnitude on the same sample. The electron mean free path is
obtained from the linear scaling of resistance with length at various
temperatures. The low... | 0704.0300v2 |
2007-09-12 | Thermal Transient Characterization of Packaged Thin Film Microcoolers | A network identification by deconvolution (NID) method is applied to the
thermal transient response of packaged and unpackaged microcoolers. A thin film
resistor on top of the device is used as the heat source and the temperature
sensor. The package and the bonding thermal resistances can be easily
identified by compar... | 0709.1817v1 |
2007-12-09 | Interplay between carrier localization and magnetism in diluted magnetic and ferromagnetic semiconductors | The presence of localized spins exerts a strong influence on quantum
localization in doped semiconductors. At the same time carrier-mediated
interactions between the localized spins are modified or even halted by
carriers' localization. The interplay of these effects is discussed for II-VI
and III-V diluted magnetic se... | 0712.1293v2 |
2009-08-25 | Bipolar resistive switching in amorphous titanium oxide thin films | Using isothermal and temperature-dependent electrical measurements, we
investigated the resistive switching mechanism of amorphous titanium oxide thin
films deposited by a plasma-enhanced atomic layer deposition method between two
aluminum electrodes. We found a bipolar resistive switching behavior in the
high temperat... | 0908.3525v1 |
2009-12-09 | Scaling Properties of Ge-SixGe1-x Core-Shell Nanowire Field Effect Transistors | We demonstrate the fabrication of high-performance Ge-SixGe1-x core-shell
nanowire field-effect transistors with highly doped source and drain, and
systematically investigate their scaling properties. Highly doped source and
drain regions are realized by low energy boron implantation, which enables
efficient carrier in... | 0912.1827v1 |
2010-07-21 | The effects of superconductor-stabilizer interfacial resistance on quench of a pancake coil made out of coated conductor | We present the results of numerical analysis of normal zone propagation in a
stack of $YBa_2Cu_3O_{7-x}$ coated conductors which imitates a pancake coil.
Our main purpose is to determine whether the quench protection quality of such
coils can be substantially improved by increased contact resistance between the
superco... | 1007.3768v2 |
2012-10-15 | Bi2Te_xSe_y series studied by resistivity and thermopower | We study the detailed temperature and composition dependence of the
resistivity, $\rho(T)$, and thermopower, $S(T)$, for a series of layered
bismuth chalcogenides Bi$_2$Te$_{3-x}$Se$_x$, and report the stoichiometry
dependence of the optical band gap. In the resistivity of the most compensated
member, Bi$_2$Te$_{2.1}$S... | 1210.3901v3 |
2014-07-14 | Multistate nonvolatile straintronics controlled by a lateral electric field | We present a multifunctional and multistate permanent memory device based on
lateral electric field control of a strained surface. Sub-coercive electrical
writing of a remnant strain of a PZT substrate imprints stable and rewritable
resistance changes on a CoFe overlayer. A proof-of-principle device, with the
simplest ... | 1407.3651v2 |
2015-10-29 | Resistive superconducting transition and effects of atmospheric exposure in the intercalation superconductor Ax(C2H8N2)yFe2-zSe2 (A = Li, Na) | We have succeeded in observing zero-resistivity in newly discovered
intercalation superconductors Ax(C2H8N2)yFe2-zSe2 (A = Li, Na) with Tc = 45 K,
using the sintered pellet samples. The electrical resistivity, \r{ho}, in the
normal state is metallic and Tconset defined in the $\rho$ measurements, is as
high as ~ 57 K. ... | 1510.08629v1 |
2016-05-19 | Resistive Switching Characteristics of Al/Si3N4/p-Si MIS-Based Resistive Switching Memory Devices | In this study, we proposed and demonstrated a self-rectifying property of
silicon nitride (Si3N4)-based resistive random access memory device by
employing p-type silicon (p-Si) as bottom electrode. The RRAM devices consisted
of Al/Si3N4/p-Si are fabricated by a low presure chemical vapor deposition and
exhibited an int... | 1605.06006v1 |
2016-06-25 | Transport mechanism through metal-cobaltite interfaces | The resistive switching (RS) properties as a function of temperature were
studied for Ag/La$_{1-x}$Sr$_x$CoO$_3$ (LSCO) interfaces. The LSCO is a
fully-relaxed 100 nm film grown by metal organic deposition on a LaAlO$_3$
substrate. Both low and a high resistance states were set at room temperature
and the temperature d... | 1606.07974v1 |
2016-07-19 | Non-quasiparticle transport and resistivity saturation: A view from the large-N limit | The electron dynamics in metals are usually well described by the
semiclassical approximation for long-lived quasiparticles. However, in some
metals, the scattering rate of the electrons at elevated temperatures becomes
comparable to the Fermi energy; then, this approximation breaks down, and the
full quantum-mechanica... | 1607.05725v1 |
2016-11-04 | Origin of multistate resistive switching in Ti/manganite/Si$O_x$/Si heterostructures | We report on the growth and characterization of
Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/Si$O_x$/n-Si memristive devices. We demonstrate
that using current as electrical stimulus unveils an intermediate resistance
state, in addition to the usual high and low resistance states that are
observed in standard voltage controlled expe... | 1611.01552v2 |
2017-06-07 | Spatially Resolved Thermometry of Resistive Memory Devices | The operation of resistive and phase-change memory (RRAM and PCM) is
controlled by highly localized self-heating effects, yet detailed studies of
their temperature are rare due to challenges of nanoscale thermometry. Here we
show that the combination of Raman thermometry and scanning thermal microscopy
(SThM) can enabl... | 1706.02318v1 |
2017-12-03 | Microstructure and properties of Cu-Sn-Zn-TiO2 Nano-composite coatings on mild steel | Cu-Sn-Zn coatings have been widely used in industry for their unique
properties, such as good conductivity, high corrosion resistance and excellent
solderability. To further improve the mechanical performance of Cu-Sn-Zn
coatings, powder-enhanced method was applied in the current study and
Cu-Sn-Zn-TiO2 nano-composite ... | 1712.00853v1 |
2022-02-11 | Comparison of the charge-crystal and charge-glass state in geometrically frustrated organic conductors studied by fluctuation spectroscopy | We present a systematic investigation of the low-frequency charge carrier
dynamics in different charge states of the organic conductors
$\theta$-(BEDT-TTF)$_2$$M$Zn(SCN)$_4$ with $M$=Rb,Tl, which result from
quenching or relaxing the charge degrees of freedom on a geometrically
frustrated triangular lattice. Due to str... | 2202.05602v1 |
2007-10-09 | Strong reduction of field-dependent microwave surface resistance in YBa$_{2}$Cu$_{3}$O$_{7-δ}$ with sub-micrometric BaZrO$_3$ inclusions | We observe a strong reduction of the field induced thin film surface
resistance measured at high microwave frequency ($\nu=$47.7 GHz) in
YBa$_{2}$Cu$_{3}$O$_{7-\delta}$ thin films grown on SrTiO$_3$ substrates, as a
consequence of the introduction of sub-micrometric BaZrO$_3$ particles. The
field increase of the surfac... | 0710.1754v1 |
2017-08-04 | Tunable Spin-Orbit Torques in Cu-Ta Binary Alloy Heterostructures | The spin Hall effect (SHE) is found to be strong in heavy transition metals
(HM), such as Ta and W, in their amorphous and/or high resistivity form. In
this work, we show that by employing a Cu-Ta binary alloy as buffer layer in an
amorphous Cu$_{100-x}$Ta$_{x}$-based magnetic heterostructure with
perpendicular magneti... | 1708.01356v1 |
2019-03-29 | Effect of synthesis conditions on the electrical resistivity of TiSe$_2$ | Dilute impurities and growth conditions can drastically affect the transport
properties of TiSe$_2$, especially below the charge density wave transition. In
this paper, we discuss the effects of cooling rate, annealing time and
annealing temperature on the transport properties of TiSe$_2$: slow cooling of
polycrystalli... | 1903.12375v3 |
2019-12-18 | A theory of resistivity in Kondo lattice materials: the memory function approach | We theoretically analyse D.C. resistivity($\rho$) in the Kondo-lattice model
using the powerful memory function approach. The complete temperature evolution
of $\rho$ is investigated using the W\"{o}lfle-G\"{o}tze expansion of the
memory function. The resistivity in this model originates due to spin-flip
magnetic scatt... | 1912.08407v1 |
2019-06-15 | Oxide layer thickness effects on the resistance switching characteristics of Ti/TiO2-NT/Au structure | Self-ordered nanotubular titania TiO2-NT with outer tube diameter of 45 nm
are synthesized using the anodic oxidation of titanium foil. Four sets of
memristors with 100 ${\mu}m$ diameter based on Ti/TiO2-NT/Au sandwich
structures with an oxide layer thickness of 80, 120, 160 and 200 nm are
fabricated. Current-voltage (... | 1906.06555v1 |
2019-11-28 | Tailored joint fabrication process derived ultra-low resistance MgB2 superconducting joint | We report an ultra-low resistance superconducting joint using unreacted
multifilament MgB2 wires produced by tailoring the powder compaction pressure
within the joint with heat treatment conditions. The joint demonstrated an
ultra-low resistance of 5.48 x 10^-15 ohms and critical current (Ic) of 91.3 A
at 20 K in self-... | 1911.12645v1 |
2020-10-23 | Improvement of HRS Variability in OxRRAM by Tailored Metallic Liner | In this work, we propose a novel integration in order to significantly reduce
the High Resistance State vari-ability and to improve thermal stability in
Oxide-based Resistive Random Access Memory (OxRRAM) devices. A novel device
featuring a metallic liner, acting as a parallel resistance, is presented. To
assess the ef... | 2010.12210v1 |
2020-11-01 | Light induced resistive switching in copper oxide thin films | Copper oxide thin film based metal-insulator-metal structures were subjected
to white light irradiation.The top electrodes included Al, Cr and Ni while the
bottom electrode was either Au or Pt. A white light pulse controls the set
process and this light induced set (LIS) can be performed at very low voltages
(tens of m... | 2011.00423v1 |
2021-04-05 | Charge density wave and finite-temperature transport in minimally twisted bilayer graphene | We study phenomena driven by electron-electron interactions in the minimally
twisted bilayer graphene (mTBLG) with a perpendicular electric field. The
low-energy degrees of freedom in mTBLG are governed by a network of
one-dimensional domain-wall states, described by two channels of
one-dimensional linearly dispersing ... | 2104.02084v2 |
2021-05-14 | Mechanical Response of Mesoporous Amorphous NiTi Alloy to External Deformations | The porous titanium nickelide is very popular in various industries due to
unique combination of physical and mechanical properties such as shape memory
effect, high corrosion resistance, and biocompatibility. The non-equilibrium
molecular dynamics simulation was applied to study the influence of porosity
degree on mec... | 2105.06693v1 |
2021-08-01 | Sb concentration dependent Structural and Transport properties of Polycrystalline (Bi1-xSbx)2Te3 Mixed crystal | (Bi1-xSbx)2Te3 (x=0.60, 0.65, 0.68, 0.70, 0.75 and 0.80) mixed crystals have
been synthesized by solid state reaction. In depth structural, thermal,
transport and electronic properties are reported. Defect and disorder play a
crucial role in structural and transport behaviour. Disorder induced
iso-structural phase tran... | 2108.00525v1 |
2021-10-16 | Topological phonons in an inhomogeneously strained silicon-6: Possible evidence of the high temperature spin superfluidity and the second sound of topological phonons | The superposition of topological phonons and flexoelectronic charge
separation in an inhomogeneously strain Si give rise to topological electronic
magnetism of phonons. The topological electronic magnetism of phonons is also
expected to give rise to stationary spin current or spin superfluidity. In this
experimental st... | 2110.08431v1 |
2021-12-10 | Transport in the emergent Bose liquid: Bad metal, strange metal, and weak insulator, all in one system | Non-saturating high-temperature resistivity ("bad metal"), T-linear
low-temperature resistivity ("strange metal"), and a crossover to
activation-free growth of the resistivity in the low-temperature limit ("weak
insulator") are among the most exotic behaviors widely observed in many
strongly correlated materials for de... | 2112.05747v1 |
2022-04-20 | Electrical breakdown in Thick-GEM based WELL detectors | The occurrence of electrical discharges in gas detectors restricts their
dynamic range and degrades their performance. Among the different methods
developed to mitigate discharge effects, the use of resistive materials in the
detector assembly was found to be very effective. In this work, we present the
results of a co... | 2204.09445v2 |
2022-11-27 | Evolution of Resistive Switching Characteristics in WO3-x-based MIM Devices by Tailoring Oxygen Deficiency | We report on resistive switching (RS) characteristics of W/WO3-x/Pt-based
thin film memristors modulated by precisely controlled oxygen
non-stoichiometry. RS properties of the devices with varied oxygen vacancy (VO)
concentration have been studied by measuring their DC current voltage
properties. Switchability of the r... | 2211.14809v1 |
2024-05-13 | Durability of MgO/hydromagnesite mortars -- Resistance to chlorides and corrosion | The durability of MgO/hydromagnesite mortars was studied with respect to
their corrosion performance and resistance to chloride attack and moisture.
MgO/hydromagnesite pastes were cured in chloride solution to induce potential
formation of Mg-chlorides; however, no such phases were observed. Rapid
chloride ingress meas... | 2405.08164v1 |
2024-05-27 | Electronic thermal resistivity and quasi-particle collision cross-section in semi-metals | Electron-electron collisions lead to a T-square component in the electrical
resistivity of Fermi liquids. The case of liquid $^3$He illustrates that the
\textit{thermal} resitivity of a Fermi liquid has a T-square term, expressed in
m$\cdot$W$^{-1}$. Its natural units are $\hbar/k_FE_F^2$. Here, we present a
high-resol... | 2405.16984v2 |
2017-10-02 | Anomalous magnetotransport properties of high-quality single crystals of Weyl semimetal WTe2: Sign change of Hall resistivity | We report on a systematic study of Hall effect using high quality single
crystals of type-II Weyl semimetal WTe2 with the applied magnetic field B//c.
The residual resistivity ratio of 1330 and the large magnetoresistance of
1.5\times10^6 % in 9 T at 2 K, being in the highest class in the literature,
attest to their hi... | 1710.00570v1 |
2021-10-14 | Superconductor-insulator transitions in three-dimensional indium-oxide at high pressures | Experiments investigating magnetic-field-tuned superconductor-insulator
transition (HSIT) mostly focus on two-dimensional material systems where the
transition and its proximate ground-state phases, often exhibit features that
are seemingly at odds with the expected behavior. Here we present a
complementary study of a ... | 2110.07251v3 |
2012-07-26 | High pressure transport studies of the LiFeAs analogues CuFeTe2 and Fe2As | We have synthesized two iron-pnictide/chalcogenide materials, CuFeTe2 and
Fe2As, which share crystallographic features with known iron-based
superconductors, and carried out high-pressure electrical resistivity
measurements on these materials to pressures in excess of 30 GPa. Both
compounds crystallize in the Cu2Sb-typ... | 1207.6272v1 |
2012-10-12 | Pressure Induced Superconductivity in Ba0.5Sr0.5Fe2As2 | High-pressure electrical resistance measurements have been performed on
single crystal Ba0.5Sr0.5Fe2As2 platelets to pressures of 16 GPa and
temperatures down to 10 K using designer diamond anvils under quasi-hydrostatic
conditions with an insulating steatite pressure medium. The resistance
measurements show evidence o... | 1210.3603v1 |
2012-12-03 | Observation of Resistively Detected Hole Spin Resonance and Zero-field Pseudo-spin Splitting in Epitaxial Graphene | Electronic carriers in graphene show a high carrier mobility at room
temperature. Thus, this system is widely viewed as a potential future
charge-based high-speed electronic-material to complement- or replace- silicon.
At the same time, the spin properties of graphene have suggested improved
capability for spin-based e... | 1212.0329v1 |
2013-04-09 | Upper critical field of high quality single crystals of KFe$_2$As$_2$ | Measurements of temperature-dependent in-plane resistivity, $\rho(T)$, were
used to determine the upper critical field and its anisotropy in high quality
single crystals of stoichiometric iron arsenide superconductor KFe$_2$As$_2$.
The crystals were characterized by residual resistivity ratio,
$\rho(300K)/\rho(0)$ up t... | 1304.2689v1 |
2017-10-10 | Thermal conductivity and electrical resistivity of solid iron at Earth's core conditions from first-principles | We compute the thermal conductivity and electrical resistivity of solid hcp
Fe to pressures and temperatures of Earth's core. We find significant
contributions from electron-electron scattering, usually neglected at high
temperatures in transition metals. Our calculations show a quasi-linear
relation between electrical... | 1710.03564v6 |
2014-08-20 | Carbon Memory Assessment | The geometrical and performance scaling of silicon CMOS integrated circuit
technology over the past 50 years has enabled many affordable new products for
business and consumer applications. Recognizing that Flash is approaching its
ultimate physical scaling limits within the next 10 years or so, the global
electronics ... | 1408.4600v1 |
2003-11-06 | Violation of the Mott-Ioffe-Regel Limit: High-temperature Resistivity of Itinerant Magnets Srn+1RunO3n+1 (n=2,3,infinity) and CaRuO3 | Srn+1RunO3n+1 represents a class of layered materials whose physical
properties are a strong function of the number of Ru-O layers per unit cell, n.
This series includes the p-wave superconductor Sr2RuO4 (n=1), enhanced
paramagnetic Sr3Ru2O7 (n=2), nearly ferromagnetic Sr4Ru3O10 (n=3) and itinerant
ferromagnetic SrRuO3... | 0311142v1 |
2022-03-09 | Vanadium doped beta-Ga2O3 single crystals: Growth, Optical and Terahertz characterization | We report the growth of electrically-resistive vanadium-doped beta-Ga2O3
single crystals via the optical floating zone technique. By carefully
controlling the growth parameters V-doped crystals with very high electrical
resistivity compared to the usual n-type V-doped beta-Ga2O3 (ne~10^(18)/cm^3)
can be synthesized. Th... | 2203.04941v1 |
2017-05-08 | Systematic efficiency study of line-doubled zone plates | Line-doubled Fresnel zone plates provide nanoscale, high aspect ratio
structures required for efficient high resolution imaging in the multi-keV
x-ray range. For the fabrication of such optics a high aspect ratio HSQ resist
template is produced by electron-beam lithography and then covered with Ir by
atomic layer depos... | 1705.02807v1 |
2020-03-23 | Plasma Surface Metallurgy of Materials Based on Double Glow Discharge Phenomenon | Plasma Surface Metallurgy/Alloying is a kind of surface metallurgy/alloying
to employ low temperature plasma produced by glow discharge to diffuse alloying
elements into the surface of substrate material to form an alloy layer. The
first plasma surface metallurgy technology is plasma nitriding invented by
German scient... | 2003.10250v1 |
2024-05-23 | Concurrence of directional Kondo transport and incommensurate magnetic order in the layered material AgCrSe$_2$ | In this work, we report on the concurrent emergence of the directional Kondo
behavior and incommensurate magnetic ordering in a layered material. We employ
temperature- and magnetic field-dependent resistivity measurements,
susceptibility measurements, and high resolution wavelength X-ray diffraction
spectroscopy to st... | 2405.14541v1 |
2013-04-11 | Resistance switching in oxides with inhomogeneous conductivity | Electric-field-induced resistance switching (RS) phenomena have been studied
for over 60 years in metal/dielectrics/metal structures. In these experiments a
wide range of dielectrics have been studied including binary transition metal
oxides, perovskite oxides, chalcogenides, carbon- and silicon-based materials,
as wel... | 1304.3290v1 |
2018-01-11 | Modeling the Oblique Spin Precession in Lateral Spin Valves for Accurate Determination of Spin Lifetime Anisotropy: Effect of Finite Contact Resistance and Channel Length | The spin lifetime anisotropy is an important quantity for investigating the
spin relaxation mechanisms in graphene and in heterostructures of
two-dimensional materials. We generalize the diffusive spin transport equations
of oblique spin precession in a lateral spin valve with finite contact
resistance. This yields a m... | 1801.03606v1 |
2019-03-14 | Low Resistivity and High Breakdown Current Density of 10-nm Diameter van der Waals TaSe3 Nanowires by Chemical Vapor Deposition | Micron-scale single-crystal nanowires of metallic TaSe3, a material that
forms -Ta-Se3-Ta-Se3- stacks separated from one another by a tubular van der
Waals (vdW) gap, have been synthesized using chemical vapor deposition (CVD) on
a SiO2/Si substrate, in a process compatible with semiconductor industry
requirements. The... | 1903.06227v1 |
2019-09-01 | Low activation, refractory, high entropy alloys for nuclear applications | Two new, low activation high entropy alloys (HEAs) TiVZrTa and TiVCrTa are
studied for use as in-core, structural nuclear materials for in-core nuclear
applications. Low-activation is a desirable property for nuclear reactors, in
an attempt to reduce the amount of high level radioactive waste upon
decommissioning, and ... | 1909.00373v1 |
2019-08-07 | Part I: Theoretical Predictions of Preferential Oxidation in Refractory High Entropy Materials | High entropy materials, which include high entropy alloys, carbides, and
borides, are a topic of substantial research interest due to the possibility of
a large number of new material compositions that could fill gaps in application
needs. There is a current need for materials exhibiting high temperature
stability, par... | 1908.02654v2 |
2011-03-30 | The efficient spin injector scheme based on Heusler materials | We present the rational design scheme intended to provide the stable high
spin-polarization at the interfaces of the magneto-resistive junctions by
fulfilling the criteria of structural and chemical compatibilities at the
interface. This can be realized by joining the semiconducting and half-metallic
Heusler materials ... | 1103.5928v1 |
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