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2018-07-18
2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p$^+$-WSe$_2$ Source
Two-dimensional (2D) materials are highly promising for tunnel field effect transistors (TFETs) with low subthreshold swing and high drive current because the shorter tunnel distance and strong gate controllability can be expected from the van der Waals gap distance and the atomically sharp heterointerface formed indep...
1807.06762v1
2019-10-14
Plasmonic Titanium Nitride via Atomic Layer Deposition: A Low-Temperature Route
To integrate plasmonic devices into industry, it is essential to develop scalable and CMOS compatible plasmonic materials. In this work, we report high plasmonic quality titanium nitride (TiN) on c-plane sapphire by plasma enhanced atomic layer deposition (PE-ALD). TiN with low losses and high metallicity was achieved ...
2001.05063v1
2021-06-26
High Infrared Reflectance Modulation in VO2 Films Synthesized on Glass and ITO coated Glass substrates using Atmospheric Oxidation of Vanadium
Vanadium Dioxide (VO2) is a strongly correlated material, which exhibits insulator to metal transition at ~68 C along with large resistivity and infrared optical reflectance modulation. In this work, we use atmospheric pressure thermal oxidation of Vanadium to synthesize VO2 films on glass and ITO coated glass substrat...
2106.14006v1
2022-04-11
Emergent superconductivity in van der Waals Kagome material Pd3P2S8 under high pressure
Kagome lattice systems have been proposed to host rich physics, which provide an excellent platform to explore unusual quantum states. Here, we report on the discovery of superconductivity in van der Waals material Pd3P2S8 under pressure. The superconductivity is observed in Pd3P2S8 for those pressures where the temper...
2204.05179v1
2001-07-21
Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$
Our investigation of the magnetotransport in two charge ordered manganites with similar magnetic ground states reveals that the origin of magnetoresistance can not be concluded from the isofield resistivity, $\rho $(T, constant H), measurements alone. Both Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ (PrSrCa) and La$_{0.5...
0107448v1
2006-09-15
Magneto Transport of high TCR (temperature coefficient of resistance) La2/3Ca1/3MnO3: Ag Polycrystalline Composites
We report the synthesis, (micro)structural, magneto-transport and magnetization of polycrystalline La2/3Ca1/3MnO3:Agx composites with x = 0.0, 0.1, 0.2, 0.3 and 0.4. The temperature coefficient of resistance (TCR) near ferromagnetic (FM) transition is increased significantly with addition of Ag. The FM transition tempe...
0609364v1
2007-09-05
Microwave surface resistance of pristine and neutron-irradiated MgB2 samples in magnetic field
We report on the microwave surface resistance of two polycrystalline Mg11B2 samples; one consists of pristine material, the other has been irradiated at very high neutron fluence. It has already been reported that in the strongly irradiated sample the two gaps merge into a single value. The mw surface resistance has be...
0709.0618v2
2008-02-12
Two-Fluid Behaviour at the Origin of the Resistivity Peak in Doped Manganites
We report a series of magnetic and transport measurements on high-quality single crystal samples of colossal magnetoresistive manganites, La_{0.7} Ca_{0.3} Mn O_3 and Pr_{0.7} Sr_{0.3} Mn O_3. 1 % Fe doping allows a Moessbauer spectroscopy study, which shows (i) unusual line broadening within the ferromagnetic phase an...
0802.1664v3
2008-06-15
Anisotropy in the electrical resistivity and susceptibility of superconducting BaFe$_{2}$As$_{2}$ single crystals
Sizable single crystals of $BaFe_2As_2$ have been grown with self-flux method. The crystals are plate-like with c-axis perpendicular to the plane. The size can be as large as 3 x 5 x 0.2 $mm^3$. The resistivity anisotropy ($\rho_c/\rho_{ab}$) is as large as about 150, and independent of temperature. The transport in ab...
0806.2452v2
2008-10-01
Qualitative explanation of the temperature behaviors of the transport properties and magnetic susceptibility of high-temperature superconductors in the normal state
A model based on the alternating structure of the imbedded conduction layers (the Cu-O2 planes) with the charge-transfer-insulator (CTI) layers is proposed. There are three kinds of carriers, each with a different behavior: conduction-like holes in the Cu-O2 layers and electrons and normal holes in the CTI matrix betwe...
0810.0169v2
2011-01-29
Crystal structure, physical properties and superconductivity in $A_{x}$Fe$_2$Se$_2$ single crystals
We studied the correlation among structure and transport properties and superconductivity in the different $A_x$Fe$_2$Se$_2$ single crystals ($A$ = K, Rb, and Cs). Two sets of (00$l$) reflections are observed in the X-ray single crystal diffraction patterns, and arise from the intrinsic inhomogeneous distribution of th...
1101.5670v1
2011-03-04
Measurements of thermodynamic and transport properties of EuC$_2$: a low-temperature analogue of EuO
EuC$_2$ is a ferromagnet with a Curie-temperature of $T_C \simeq 15\,$K. It is semiconducting with the particularity that the resistivity drops by about 5 orders of magnitude on cooling through $T_C$, which is therefore called a metal-insulator transition. In this paper we study the magnetization, specific heat, therma...
1103.0980v1
2012-07-13
Synthesis and acid resistance of maya blue pigment
Maya blue is an organo-clay artificial pigment composed of indigo and palygorskite. It was invented and frequently used in Mesoamerica in ancient times (eighth to 16th centuries). We analyse in this paper one of the characteristics of Maya blue that has attracted the attention of scientists since its rediscovery in 193...
1207.3229v1
2013-04-07
Quasi-classical physics and T-linear resistivity in both strongly correlated and ordinary metals
We show that near a quantum critical point generating quantum criticality of strongly correlated metals where the density of electron states diverges, the quasi-classical physics remains applicable to the description of the resistivity \rho of strongly correlated metals due to the presence of a transverse zero-sound co...
1304.2068v4
2013-09-13
1/f noise in graphene
We present a novel and comprehensive model of 1/f noise in nanoscale graphene devices that accounts for the unusual and so far unexplained experimental characteristics. We find that the noise power spectral density versus carrier concentration of single-layer sheet devices has a behavior characterized by a shape going ...
1309.3420v1
2014-09-19
Absence of a quantum limit to charge diffusion in bad metals
Good metals are characterised by diffusive transport of coherent quasi-particle states and the resistivity is much less than the Mott-Ioffe-Regel (MIR) limit, $\frac{ha}{e^{2}}$, where $a$ is the lattice constant. In bad metals, such as many strongly correlated electron materials, the resistivity exceeds the Mott-Ioffe...
1409.5662v2
2016-05-26
Fast suppression of superconductivity with Fe site Ni substitution in Fe1-xNixSe0.5Te0.5 (x=0.0, 0.01, 0.03, 0.05, 0.07, 0.10 and 0.20) single crystals
We report the effect of Ni doping on superconductivity of FeSe0.5Te0.5. The single crystal samples of series Fe1-xNixSe0.5Te0.5 (x=0.0, 0.01, 0.03, 0.05, 0.07, 0.10 and 0.20) are synthesized via vacuum shield solid state reaction route and high temperature heating followed by slow cooling. All the crystals of Fe1-xNixS...
1605.08217v2
2016-06-23
Resistive properties and phase diagram of the organic antiferromagnetic metal $κ$-(BETS)$_2$FeCl$_4$
The low-temperature electronic state of the layered organic charge-transfer salt $\kappa$-(BETS)$_2$FeCl$_4$ was probed by interlayer electrical resistance measurements under magnetic field. Both above and below $T_{\mathrm{N}}=0.47\,$K, the temperature of antiferromagnetic ordering of $3d$-electron spins of Fe$^{3+}$ ...
1606.07331v3
2016-10-28
Asymmetric pentagonal metal meshes for flexible transparent electrodes and heaters
Metal meshes have emerged as an important class of flexible transparent electrodes. We report on the characteristics of a new class of asymmetric meshes, tiled using a recently-discovered family of pentagons. Micron-scale meshes were fabricated on flexible polyethylene terephthalate substrates via optical lithography, ...
1611.02744v1
2018-11-06
Metallic surface states in a correlated d-electron topological Kondo insulator candidate FeSb2
The resistance of a conventional insulator diverges as temperature approaches zero. The peculiar low temperature resistivity saturation in the 4f Kondo insulator (KI) SmB6 has spurred proposals of a correlation-driven topological Kondo insulator (TKI) with exotic ground states. However, the scarcity of model TKI materi...
1811.02183v3
2016-03-09
Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO$_{3}$
The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, w...
1603.02850v2
2017-07-21
Electrical characterization of structured platinum diselenide devices
Platinum diselenide (PtSe2) is an exciting new member of the two-dimensional (2D) transition metal dichalcogenide (TMD) family. it has a semimetal to semiconductor transition when approaching monolayer thickness and has already shown significant potential for use in device applications. Notably, PtSe2 can be grown at l...
1707.06824v1
2017-08-06
Electric-field-induced extremely large change in resistance in graphene ferromagnets
A colossal magnetoresistance ($\sim 100\times10^3\%$) and an extremely large magnetoresistance ($\sim 1\times10^6\%$) have been previously explored in manganite perovskites and Dirac materials, respectively. However, the requirement of an extremely strong magnetic field (and an extremely low temperature) makes them not...
1708.01858v2
2018-08-30
Metallic glasses for spintronics: anomalous temperature dependence and giant enhancement of inverse spin Hall effect
Spin-charge conversion via inverse spin Hall effect (ISHE) is essential for enabling various applications of spintronics. The spin Hall response usually follows a universal scaling relation with longitudinal electric resistivity and has mild temperature dependence because elementary excitations play only a minor role i...
1808.10371v1
2018-07-06
MRPC3b mass production for CBM-TOF and eTOF at STAR
The Compressed Baryonic Matter (CBM) spectrometer aims to study strongly interacting matter under extreme conditions. The key element providing hadron identification at incident energies between 2 and 11 AGeV in heavy-ion collisions at the SIS100 accelerator is a Time-of-Flight (TOF) wall covering the polar angular ran...
1807.02452v1
2019-01-03
Study of electrostatic septum design and its high-voltage discharge protection
In this paper, we introduce the design of electrostatic septum (ESS) for the accelerator of Shanghai Advanced Proton Therapy (SAPT), and discuss its mechanical structure and the material selection of the electrode. The beam loss on the septum is studied, and the calculation results are given by the particle simulation ...
1901.00646v3
2020-05-17
Remarkable low-energy properties of the pseudogapped semimetal Be$_5$Pt
We report measurements and calculations on the properties of the intermetallic compound Be$_5$Pt. High-quality polycrystalline samples show a nearly constant temperature dependence of the electrical resistivity over a wide temperature range. On the other hand, relativistic electronic structure calculations indicate the...
2005.08327v2
2021-04-19
Various magnetism of the compressed antiferromagnetic topological insulator EuSn2As2
We report a comprehensive high-pressure study on the antiferromagnetic topological insulator EuSn2As2 up to 21.1 GPa through measurements of synchrotron x-ray diffraction, electrical resistance, magnetic resistance, and Hall transports combined with first-principles calculations. No evident trace of a structural phase ...
2104.09412v1
2021-04-20
Properties of MoO2 and MoO3 Films Prepared from the Chemically Driven Isothermal Close Space Vapor Transport Technique
Chemically _ driven isothermal close space vapour transport was used to prepare pure MoO2 films which were eventually converted to MoO3 by annealing in air. According to temperature_dependent Raman measurements, the MoO2/MoO3 phase transformation was found to occur in the 225 _ 350 oC range; no other phases were detect...
2104.10245v1
2021-08-21
Evolution of superconductivity and charge order in pressurized RbV$_3$Sb$_5$
The kagome metals $A$V$_3$Sb$_5$ ($A=$ K, Rb, Cs) under ambient pressure exhibit an unusual charge order, from which superconductivity emerges. In this work, by applying hydrostatic pressure using a liquid pressure medium and carrying out electrical resistance measurements for RbV$_3$Sb$_5$, we find the charge order be...
2108.09434v2
2021-08-22
Explainable Machine Learning using Real, Synthetic and Augmented Fire Tests to Predict Fire Resistance and Spalling of RC Columns
This paper presents the development of systematic machine learning (ML) approach to enable explainable and rapid assessment of fire resistance and fire-induced spalling of reinforced concrete (RC) columns. The developed approach comprises of an ensemble of three novel ML algorithms namely; random forest (RF), extreme g...
2108.09862v1
2021-11-27
Antiferromagnetism and large magnetoresistance in GdBi single crystal
Single crystal of the binary equi-atomic compound GdBi crystallizing in the rock salt type cubic crystal structure with the space group $Fm\bar{3}m$ has been grown by flux method. The electrical and magnetic measurements have been performed on well oriented single crystals. The antiferromagnetic ordering of the Gd mome...
2111.13836v1
2022-06-13
Ultra-High-Precision Detection of Single Microwave Photons based on a Hybrid System between Majorana Zero Mode and a Quantum Dot
The ability to detect single photons has become increasingly essential due to the rise of photon-based quantum computing. In this theoretical work, we propose a system consisting of a quantum dot (QD) side-coupled to a superconducting nanowire. The coupling opens a gap in both the QD mode and the Majorana zero mode (MZ...
2206.06521v4
2022-11-02
Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field
This letter reports high-performance $\mathrm{\beta} Ga2O3 thin channel MOSFETs with T-gate and degenerately doped source/drain contacts regrown by MOCVD. Gate length scaling (LG= 160-200 nm) leads to a peak drain current (ID,MAX) of 285 mA/mm and peak trans-conductance (gm) of 52 mS/mm at 10 V drain bias with 23.5 Ohm...
2211.01088v1
2023-04-06
All-electrical operation of a Curie-switch at room temperature
We present all-electrical operation of a Fe$_x$Cr$_{1-x}$-based Curie switch at room temperature. More specifically, we study the current-induced thermally-driven transition from ferromagnetic to antiferromagnetic Ruderman-Kittel-Kasuya-Yosida (RKKY) indirect coupling in a Fe/Cr/Fe$_{17.5}$Cr$_{82.5}$/Cr/Fe multilayer....
2304.03040v2
2023-05-14
Response of the Verwey transition in magnetite to a controlled point-like disorder induced by 2.5 MeV electron irradiation
A controlled point-like disorder induced by low temperature 2.5 MeV electron irradiation was used to probe the nature of the Verwey transition in magnetite, $\text{Fe}_{3}\text{O}_{4}$. Two large single crystals, one with optimal transition temperature, $T_{V}\approx121$ K, and another with $T_{V}\approx109$ K, as well...
2305.08276v1
2023-09-12
Numerical study on the effects of fluid properties in electrohydrodynamic pulsating jet under constant voltage
Pulsating jet is one of the common working modes in electrohydrodynamic printing (EHDP) that process is highly affected by operating parameters and material properties. In this paper, the processes of pulsating jet for liquids with different physical properties were investigated using numerical simulation. An electrohy...
2309.06277v1
2023-10-13
Controlling Umklapp scattering in bilayer graphene moir'e superlattice
In this Letter, we present experimental findings on electron-electron scattering in a two-dimensional moir'e heterostructure with tunable Fermi wave vector, reciprocal lattice vector, and band gap. We achieve this in high-mobility aligned heterostructures of bilayer graphene (BLG) and hBN. Around half-filling, the prim...
2310.08906v2
2023-11-20
Absence of metallicity and bias-dependent resistivity in low-carrier-density EuCd2As2
EuCd2As2 was theoretically predicted to be a minimal model of Weyl semimetals with a single pair of Weyl points in the ferromagnet state. However, the heavily p-doped EuCd2As2 crystals in previous experiments prevent direct identification of the semimetal hypothesis. Here we present a comprehensive magneto-transport st...
2311.11515v1
2024-01-15
Alternating Bias Assisted Annealing of Amorphous Oxide Tunnel Junctions
We demonstrate a transformational technique for controllably tuning the electrical properties of fabricated thermally oxidized amorphous aluminum-oxide tunnel junctions. Using conventional test equipment to apply an alternating bias to a heated tunnel barrier, giant increases in the room temperature resistance, greater...
2401.07415v2
2024-01-22
Self-pulsing of Dielectric Barrier Discharges at Low Driving Frequencies
This paper investigates the self-pulsing of Dielectric Barrier Discharges (DBDs) at low driving frequencies. In particular, (a) the dependence of current on the product pd of gas pressure p and the gas gap length d, (b) the effects of lossy dielectrics (in resistive discharges) and large dielectric permittivity (in fer...
2401.12410v3
2015-06-26
Conventional superconductivity at 203 K at high pressures
A superconductor is a material that can conduct electricity with no resistance below its critical temperature (Tc). The highest Tc that has been achieved in cuprates1 is 133 K at ambient pressure2 and 164 K at high pressures3. As the nature of superconductivity in these materials has still not been explained, the prosp...
1506.08190v1
2014-05-01
Effect of Electrical Properties on Gd modified BiFeO3-PbZrO3
The 0.5(BiGdxFe1-xO3)-0.5(PbZrO3) composite was synthesized using a high temperature solid-state reaction technique. Preliminary X-ray structural analysis confirms the formation of the composite. The dielectric constant and loss tangent have been studied. The hysteresis loop suggest that the material is lossy. The impe...
1405.0104v1
2019-02-13
Cu-substituted Fe2P: An emerging candidates for magnetic RAM application
We propose that Cu-substituted Fe$_2$P, (Fe$_{1-x}$Cu$_x$)$_2$P ($x\sim 0.16$), to be an outstanding contender for the STT-MRAM application. Using first principles based calculations in the framework of density functional theory and through Monte Carlo simulations, we demonstrate that this material can be used as ferro...
1902.04876v1
2012-06-01
Novel highly conductive and transparent graphene based conductors
Future wearable electronics, displays and photovoltaic devices rely on highly conductive, transparent and yet mechanically flexible materials. Nowadays indium tin oxide (ITO) is the most wide spread transparent conductor in optoelectronic applications, however the mechanical rigidity of this material limits its use for...
1206.0001v1
2020-11-16
First-principles study of the electronic, magnetic, and crystal structure of perovskite molybdates
The molybdate oxides SrMoO$_3$, PbMoO$_3$, and LaMoO$_3$ are a class of metallic perovskites that exhibit interesting properties including high mobility, and unusual resistivity behavior. We use first-principles methods based on density functional theory to explore the electronic, crystal, and magnetic structure of the...
2011.08323v2
2020-11-21
Flash microwave pressing of zirconia
Microwave Pressing is a promising way to reduce microwave sintering temperatures and stabilize microwave powder materials processing. A multi-physics simulation was conducted of the regulated pressure-assisted microwave cavity. This simulation took into consideration resonance phenomena and the nonlinear temperature-de...
2011.14009v1
2021-03-28
Acoustic-pressure-assisted engineering of aluminium foams
Foaming metals modulates their physical properties, enabling attractive applications where lightweight, low thermal conductivity or acoustic isolation are desirable. Adjusting the size of the bubbles in the foams is particularly relevant for targeted applications. Here we provide a method with a detailed theoretical un...
2103.15225v1
2023-04-21
Probabilistic selection and design of concrete using machine learning
Development of robust concrete mixes with a lower environmental impact is challenging due to natural variability in constituent materials and a multitude of possible combinations of mix proportions. Making reliable property predictions with machine learning can facilitate performance-based specification of concrete, re...
2304.11226v1
2024-03-08
Superconductivity of the New Medium-Entropy Alloy V4Ti2W with a Body-Centered Cubic Structure
Medium- and high-entropy alloy (MEA and HEA) superconductors have attracted considerable interest since their discovery. This paper reports the superconducting properties of ternary tungsten-containing MEA V4Ti2W for the first time. V4Ti2W is a type II superconductor with a body-centered cubic (BCC) structure. Experime...
2403.05115v1
2024-03-28
Challenges in extracting nonlinear current-induced phenomena in Ca2RuO4
An appealing direction to change the properties of strongly correlated materials is to induce nonequilibrium steady states by the application of a direct current. While access to these novel states is of high scientific interest, Joule heating due to current flow often constitutes a hurdle to identify nonthermal effect...
2403.19210v1
2000-01-07
Near-Field Microwave Microscopy of Materials Properties
Near-field microwave microscopy has created the opportunity for a new class of electrodynamics experiments of materials. Freed from the constraints of traditional microwave optics, experiments can be carried out at high spatial resolution over a broad frequency range. In addition, the measurements can be done quantitat...
0001075v2
2010-08-18
A Stepped Oxide Hetero-Material Gate Trench Power MOSFET for Improved Performance
In this work, we propose a new Stepped Oxide Hetero-Material Trench (SOHMT) power MOSFET with three sections in the trench gate (an N+ poly gate sandwiched between two P+ poly gates) and having different gate oxide thicknesses (increasing from source side to drain side). The different gate oxide thickness serves the pu...
1008.3022v1
2016-10-05
A Novel Nanoporous Graphite Based on Graphynes: First Principles Structure and Carbon Dioxide Preferential Physisorption
Ubiquitous graphene is a stricly 2D material representing an ideal adsorbing platform due to its large specific surface area as well as its mechanical strength and resistance to both thermal and chemical stresses. However, graphene as a bulk material has the tendency to form irreversible agglomerates leading to 3D grap...
1610.01313v1
2017-06-30
Role of anisotropy in determining stability of electrodeposition at solid-solid interfaces
We investigate the stability of electrodeposition at solid-solid interfaces for materials exhibiting an anisotropic mechanical response. The stability of electrodeposition or resistance to the formation of dendrites is studied within a linear stability analysis. The deformation and stress equations are solved using the...
1707.00064v3
2021-02-27
van der Waals heterostructures based on atomically-thin superconductors
Van der Waals heterostructures (vdWHs) allow the assembly of high-crystalline two-dimensional (2D) materials in order to explore dimensionality effects in strongly correlated systems and the emergence of potential new physical scenarios. In this work, it is illustrated the feasibility to integrate 2D materials in-betwe...
2103.00203v1
2022-11-18
Pressure-Tuning Superconductivity in Noncentrosymmetric Topological Materials ZrRuAs
Recently, the hexagonal phase of ternary transition metal pnictides TT'X (T = Zr, Hf; T'= Ru; X = P, As), which are well-known noncentrosymmetric superconductors, were predicted to host nontrivial bulk topology. In this work, we systematically investigate the electronic responses of ZrRuAs to external pressure. At ambi...
2211.10289v1
2023-03-28
On optimization of heterogeneous materials for enhanced resistance to bulk fracture
We propose a novel approach to optimize the design of heterogeneous materials, with the goal of enhancing their effective fracture toughness under mode-I loading. The method employs a Gaussian processes-based Bayesian optimization framework to determine the optimal shapes and locations of stiff elliptical inclusions wi...
2303.15801v1
2024-01-23
Electronic Noise Spectroscopy of Quasi-2D van der Waals Antiferromagnetic Semiconductors
We investigated low-frequency current fluctuations, i.e. electronic noise, in FePS3 van der Waals, layered antiferromagnetic semiconductor. The noise measurements have been used as noise spectroscopy for advanced materials characterization of the charge carrier dynamics affected by spin ordering and trapping states. Ow...
2401.12432v1
2015-04-24
Graphene surpasses GaAs/AlGaAs for the application of the quantum Hall effect in metrology
The quantum Hall effect (QHE) theoretically provides a universal standard of electrical resistance in terms of the Planck constant $h$ and the electron charge $e$. In graphene, the spacing between the lowest discrete energy levels occupied by the charge carriers under magnetic field is exceptionally large. This is prom...
1504.06511v1
2009-12-24
Nanostructural Superconducting Materials for Fault Current Limiters and Cryogenic Electrical Machines
Materials of the Y-Ba-Cu-O (melt-textured YBa2Cu3O7-d-based materials or MT-YBCO) and Mg-B-O (MgB2-based materials) systems with high superconducting performance, which can be attained due to the formation of regularly distributed nanostructural defects and inhomogenities in their structure can be effectively used in c...
0912.4899v1
2010-11-01
Modeling materials with optimized transport properties
Following demands for materials with peculiar transport properties, e.g. in magnetoelectronics or thermoelectrics, there is a need for materials modeling at the quantum-mechanical level. We combine density-functional with various scale-bridging tools to establish correlations between the macroscopic properties and the ...
1011.0324v1
2023-05-15
Thermal conductivity of macroporous graphene aerogel measured using high resolution comparative infrared thermal microscopy
Graphene aerogel (GA) is a promising material for thermal management applications across many fields due to its lightweight and thermally insulative properties. However, standard values for important thermal properties, such as thermal conductivity, remain elusive due to the lack of reliable characterization techniques...
2305.09033v3
2024-04-18
Assessing the Risk of Proliferation via Fissile Material Breeding in ARC-class Fusion Reactors
Construction of a nuclear weapon requires access to kilogram-scale quantities of fissile material, which can be bred from fertile material like U-238 and Th-232 via neutron capture. Future fusion power plants, with total neutron source rates in excess of $10^{20}$ n/s, could breed weapons-relevant quantities of fissile...
2404.12451v1
2022-01-10
A theory for anisotropic magnetoresistance in materials with two vector order parameters
Anisotropic magnetoresistance (AMR) and related planar Hall resistance (PHR) are ubiquitous phenomena of magnetic materials. Although the universal angular dependences of AMR and PHR in magnetic polycrystalline materials with one order parameter are well known, no similar universal relation for other class of magnetic ...
2201.03316v1
2003-11-04
Resistive transition in $π$-junction superconductors
The resistivity behavior of inhomogeneous superconductors with random $\pi$ junctions, as in high-$T_c$ materials with d-wave symmetry, is studied by numerical simulation of a three-dimensional XY spin glass model. Above a concentration threshold of antiferromagnetic couplings, a resistive transition is found in the ch...
0311083v1
2004-07-28
Universal behavior of giant electroresistance in epitaxial La0.67Ca0.33MnO3 thin films
We report a giant resistance drop induced by dc electrical currents in La0.67Ca0.33MnO3 epitaxial thin films. Resistance of the patterned thin films decreases exponentially with increasing current and a maximum drop shows at the temperature of resistance peak Tp. Variation of resistance with current densities can be sc...
0407719v2
2005-06-17
Experimental Evidence for Zero DC Resistance of Superconductors
Even after nearly a century of discovery of superconductivity, there has been no direct experimental proof of the expected zero resistance of superconductors. Indeed, it has been believed that it is impossible to experimentally show that the resistance has fallen exactly to zero. In this work we demonstrate that the dc...
0506426v2
2007-11-29
Increase of Thermal Resistance Between a Nanostructure and a Surface due to Phonon Multireflections
The thermal resistance between a nanostructure and a half-body is calculated in the framework of particle-phonons physics. The current models approximate the nanostructure as a thermal bath. We prove that the multireflections of heat carriers in the nanostructure significantly increase resistance in contradiction with ...
0711.4718v1
2009-09-07
Low-Temperature Resistivity Anomalies in Periodic Curved Surfaces
Effects of periodic curvature on the the electrical resistivity of corrugated semiconductor films are theoretically considered. The presence of a curvature-induced potential affects the motion of electrons confined to the thin curved film, resulting in a significant resistivity enhancement at specific values of two geo...
0909.1135v1
2011-02-23
Pt/Ti/Al2O3/Al tunnel junctions showing electroforming-free bipolar resistive switching behavior
We investigated electroforming-free bipolar resistive switching behavior in Pt/Ti/Al2O3/Al tunnel junctions where the Al2O3 tunnel barrier was naturally formed on Al in air. Various compliance current values for the junction's set switching successfully lead to various resistance values in its low resistance state, sug...
1102.4720v1
2013-05-09
Electrostatic gating of metallic and insulating phases in SmNiO3 ultrathin films
The correlated electron system SmNiO3 exhibits a metal-insulator phase transition at 130 {\deg}C. Using an ionic liquid as an electric double layer (EDL) gate on three-terminal ultrathin SmNiO3 devices, we investigate gate control of the channel resistance and transition temperature. Resistance reduction is observed ac...
1305.2111v1
2013-06-18
Some features of anomalous conductivity of vinylene and vinyl chloride copolymer films
Manifestations of anomalous conductivity in polar dielectric films is demonstrated for the first time on samples of copolymer of vinylene and vinyl chloride, as was previously observed on modified PVC samples. On the base of these experimental results important new insights into the physical sense of traditionally used...
1306.4127v1
2013-07-02
The density of states of graphene underneath a metal electrode and its correlation with the contact resistivity
The density of states (DOS) of graphene underneath a metal is estimated through a quantum capacitance measurement of the metal/graphene/SiO2/n+-Si contact structure fabricated by a resist-free metal deposition process. Graphene underneath Au maintains a linear DOS - energy relationship except near the Dirac point, wher...
1307.0690v1
2013-08-06
Correct nonlinearity and hysteresis of volt-ampere characteristics of spin valves, magnetic tunnel junctions and memristors
There are essential achievements in synthesis of interesting for creation of compact electronic memory switched by own current structures of spin valves and magnetic tunnel junctions with hysteretic current dependences of resistance. In the offered message the attention to discrepancy to physical principles of a hyster...
1308.1220v1
2015-09-28
Multi-level Resistive Switching Characteristics of W/Co:TiO2/FTO Structures
In the present work, multi-level resistive switching (RS) in W/Co:TiO2/FTO structures induced by a multi-mixed mechanism was studied. It was found that the devices could be reproducibly programmed into three nonvolatile resistance states. And the directly switching between any resistance states was realized. This incre...
1509.08211v1
2020-09-16
The electric pulses induced multi-resistance states in the hysteresis temperature range of 1T-TaS2 and 1T-TaS1.6Se0.4
The electric pulse-induced responses of 1T-TaS2 and 1T-TaS1.6Se0.4 crystals in the commensurate charge-density-wave (CCDW) phase in the hysteresis temperature range have been investigated. We observed that abrupt multiple steps of the resistance are excited by electric pulses at a fixed temperature forming multi metast...
2009.07587v1
2012-01-26
Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces
In order to determine the key parameters that control the resistive switching mechanism in metal-complex oxides interfaces, we have studied the electrical properties of metal / YBa2Cu3O7-d (YBCO) interfaces using metals with different oxidation energy and work function (Au, Pt, Ag) deposited by sputtering on the surfac...
1201.5670v1
2019-08-21
Artificial Spin Ice Phase-Change Memory Resistors
We study the implications of the anisotropic magnetic resistance on permalloy nanowires, and in particular on the property of the resistance depending on the type of lattice. We discuss how the internal spin configuration of artificial spin ice nanowires can affect their effective resistive state, and which mechanisms ...
1908.08073v1
2020-07-09
Modeling Resistive Switching in Nanogranular Metal Films
Films produced by assembling bare gold clusters well beyond the electrical percolation threshold show a resistive switching behavior whose investigation has started only recently. Here we address the challenge to charaterize the resistance of a nanogranular film starting from limited information on the structure at the...
2007.04710v2
2019-01-12
Development of the Micro Pixel Chamber with resistive electrodes
We developed a novel design of a Micro Pixel Chamber ($\mu$-PIC) with resistive electrodes for a charged-particle-tracking detector in high-rate applications. Diamond-Like Carbon (DLC) thin film is used for the cathodes. The resistivity can be controlled flexibly ($\mathrm{10^{5-7}k\Omega/sq.}$) at high uniformity. The...
1901.03836v1
2015-10-13
Interface-mediated thermomechanical effects during high velocity impact between monocrystalline surfaces
High velocity impact between crystalline surfaces is important for a range of material phenomena, yet a fundamental understanding of the effect of surface structure, energetics and kinetics on the underlying thermo-mechanical response remains elusive. Here, we employ non-equilibrium molecular dynamics (NEMD) simulation...
1510.03775v1
2007-10-03
Directional-dependent thermally activated motion of vortex bundles and theory of anomalous Hall effect in type-II conventional and high-Tc superconductors
The anomalous Hall effect for type-II conventional and high-Tc superconductors is studied based upon the theory of thermally activated motion of vortex bundles jumping over the directional-dependent energy barrier. It is shown that the Hall anomaly is universal for type-II conventional and high-Tc superconductors as we...
0710.0700v2
2022-04-20
Superconducting bimodal ionic photo-memristor
Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical stimuli, to which they respond by varying their electrical resistance across a co...
2204.09255v1
2018-11-03
Modern Data Analytics Approach to Predict Creep of High-Temperature Alloys
A breakthrough in alloy design often requires comprehensive understanding in complex multi-component/multi-phase systems to generate novel material hypotheses. We introduce a modern data analytics workflow that leverages high-quality experimental data augmented with advanced features obtained from high-fidelity models....
1811.01239v1
2021-01-24
Electronic structure and transport properties of sol-gel-derived high-entropy Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3 thin films
High-entropy perovskite thin films, as the prototypical representative of the high-entropy oxides with novel electrical and magnetic features, have recently attracted great attention. Here, we reported the electronic structure and charge transport properties of sol-gel-derived high-entropy Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)...
2101.09633v2
2015-06-16
Unforeseen high temperature and humidity stability of FeCl$_3$ intercalated few layer graphene
We present the first systematic study of the stability of the structure and electrical properties of FeCl$_3$ intercalated few-layer graphene to high levels of humidity and high temperature. Complementary experimental techniques such as electrical transport, high resolution transmission electron microscopy and Raman sp...
1506.04907v1
2009-12-24
Properties of MgB2 bulk
The review considers bulk MgB2-based materials in terms of their structure, superconducting and mechanical properties. Superconducting transition temperatures of 34.5-39.4 K, critical current densities of 1.8-1.0 x E6 A/sq.cm in self field and 103 in 8 T field at 20 K, 3-1.5xE5 A/sq. cm in self field at 35 K, HC2 15 T ...
0912.4906v1
2017-10-23
Realization of a hole-doped Mott insulator on a triangular silicon lattice
The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magneto-resistance, and high-temperature superconductivity in layered perovskite compounds. Advances in this field would greatly benefit from the avail...
1710.08065v1
2020-04-12
Investigation on the Mechanical Properties of Functionally Graded Nickel and Aluminium Alloy by Molecular Dynamics Study
Functionally graded materials (FGMs), have drawn considerable attention of the worldwide researchers and scientific community because of its unique mechanical, thermal and electrical properties which may be exploited by varying the compositions gradually over volume. This makes FGM multifunctional material (properties ...
2004.05651v1
1997-03-03
Longitudinal and transverse dissipation in a simple model for the vortex lattice with screening
Transport properties of the vortex lattice in high temperature superconductors are studied using numerical simulations in the case in which the non-local interactions between vortex lines are dismissed. The results obtained for the longitudinal and transverse resistivities in the presence of quenched disorder are compa...
9703035v1
1997-08-19
Metallization of Fluid Hydrogen
The electrical resistivity of liquid hydrogen has been measured at the high dynamic pressures, densities and temperatures that can be achieved with a reverberating shock wave. The resulting data are most naturally interpreted in terms of a continuous transition from a semiconducting to a metallic, largely diatomic flui...
9708144v1
1997-09-16
The Metallic-Like Conductivity of a Two-Dimensional Hole System
We report on a zero magnetic field transport study of a two-dimensional, variable-density, hole system in GaAs. As the density is varied we observe, for the first time in GaAs-based materials, a crossover from an insulating behavior at low-density, to a metallic-like behavior at high-density, where the metallic behavio...
9709184v3
1998-04-23
Hysteretic behavior and evidence for domain formation in a double-layer quantum Hall system at total filling factor 2
We report anomalous behavior in a double-layer two dimensional hole gas (2DHG) at even integer filling factors which includes hysteresis in the longitudinal and Hall resistances and a very weak temperature dependence of the resistance minima. All anomalies disappear and the conventional quantum Hall effect behavior rec...
9804256v2
1998-11-18
Hall-effect in LuNi_2B_2C in normal and superconducting mixed states
The Hall resistivity rho_{xy} of LuNi_2B_2C is negative in the normal as well as in the mixed state and has no sign reversal typical for high-T_c superconductors. A distinct nonlinearity in the rho_{xy} dependence on field H was found in the normal state for T < 40K, accompanied by a large magnetoresistance reaching +9...
9811273v1
1999-07-22
Charge carrier density collapse in La_0.67Ca_0.33MnO_3 and La_0.67Sr_0.33MnO_3 epitaxial thin films
We measured the temperature dependence of the linear high field Hall resistivity of La_0.67Ca_0.33MnO_3 (T_C=232K) and La_0.67Sr_0.33MnO_3 (T_C=345K) thin films in the temperature range from 4K up to 360K in magnetic fields up to 20T. At low temperatures we find a charge carrier density of 1.3 and 1.4 holes per unit ce...
9907346v1
1999-08-05
Fermi-level alignment at metal-carbon nanotube interfaces: application to scanning tunneling spectroscopy
At any metal-carbon nanotube interface there is charge transfer and the induced interfacial field determines the position of the carbon nanotube band structure relative to the metal Fermi-level. In the case of a single-wall carbon nanotube (SWNT) supported on a gold substrate, we show that the charge transfers induce a...
9908073v3
1999-08-25
Hall effect of epitaxial double-perovskite Sr_2FeMoO_6 thin films
We prepared high epitaxial thin films of the compound Sr_2FeMoO_6 with narrow rocking curves by pulsed laser deposition. The diagonal and nondiagonal elements of the resistivity tensor were investigated at temperatures from 4 K up to room temperature in magnetic fields up to 8 T. An electronlike ordinary Hall effect an...
9908361v2
1999-10-15
Electronic Transport in a Three-dimensional Network of 1-D Bismuth Quantum Wires
The resistance R of a high density network of 6 nm diameter Bi wires in porous Vycor glass is studied in order to observe its expected semiconductor behavior. R increases from 300 K down to 0.3 K. Below 4 K, where R varies approximately as ln(1/T), the order-of-magnitude of the resistance rise, as well as the behavior ...
9910241v1
2000-01-25
Pressure Induced Quantum Critical Point and Non-Fermi-Liquid Behavior in BaVS3
The phase diagram of BaVS3 is studied under pressure using resistivity measurements. The temperature of the metal to nonmagnetic Mott insulator transition decreases under pressure, and vanishes at the quantum critical point p_cr=20kbar. We find two kinds of anomalous conducting states. The high-pressure metallic phase ...
0001371v2