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2017-02-24
Elemental Analysis of Glass and Bakelite Electrodes Using PIXE Facility
The evolution of particle detectors dates back to the discovery of X-rays and radioactivity in 1890s. In detector history, the Resistive Plate Chambers (RPCs) are introduced in early 1980s. An RPC is a gaseous detector made up of two parallel electrodes having high resistivity like that of glass and bakelite. Currently...
1702.08480v3
2014-08-12
Collapse of CuO Double Chains and Suppression of Superconductivity in High-Pressure Phase of YBa$_2$Cu$_4$O$_8$
The crystal structure and electrical resistivity of YBa$_2$Cu$_4$O$_8$ (Y124) were studied under high pressure up to 18 GPa using diamond-anvil cells, respectively, in order to clarify its conduction mechanism. Y124 causes the first-order phase-transition into the orthorhombic Immm at pressure around 11 GPa. The high-p...
1408.2613v1
2019-02-11
Improved oxidation resistance of high emissivity coatings on fibrous ceramic for reusable space system
To develop high emissivity coatings on fibrous ceramic substrates with improved thermal resistance for reusable space systems, WSi2-MoSi2-Si-SiB6-borosilicate glass coatings were prepared on fibrous ZrO2 by slurry dipping and subsequent high temperature rapid sintering. A coating with 50 wt% WSi2 and 50 wt% MoSi2 prese...
1902.03943v2
2018-08-16
Investigating Unipolar Switching in Niobium Oxide Resistive Switches: Correlating Quantized Conductance and Mechanism
Memory devices based on resistive switching (RS) have not been fully realised due to lack of understanding of the underlying switching mechanisms. Nature of ion transport responsible for switching and growth of conducting filament in transition metal oxide based RS devices is still in debate. Here, we investigated the ...
1808.05600v1
2019-12-19
A high-throughput structural and electrochemical study of metallic glass formation in Ni-Ti-Al
Based on a set of machine learning predictions of glass formation in the Ni-Ti-Al system, we have undertaken a high-throughput experimental study of that system. We utilized rapid synthesis followed by high-throughput structural and electrochemical characterization. Using this dual-modality approach, we are able to bet...
1912.09330v1
2011-04-22
High purity semi-insulating 4H-SiC epitaxial layers by Defect-Competition Epitaxy
Thick, high-purity semi-insulating (SI)homoepitaxial layers on Si-face 4H-SiC weregrownsystematically, with resistivity \geq 109{\Omega}-cmby maintaining high C/Si ratios 1.3-15 during growth.Comparison of secondary ion mass spectra betweenlow-dopedepilayers grown at C/Si ratio<1.3andSI-epilayers grown at C/Si ratio>1....
1104.4509v1
2020-05-22
Sharp negative differential resistance from vibrational mode softening in molecular junctions
We unravel the critical role of vibrational mode softening in single-molecule electronic devices at high bias. Our theoretical analysis is carried out with a minimal model for molecular junctions, with mode softening arising due to quadratic electron-vibration couplings, and by developing a mean-field approach. We disc...
2005.11365v1
2023-02-28
ZrNb(CO) RF superconducting thin film with high critical temperature in the theoretical limit
Superconducting radio-frequency (SRF) resonators are critical components for particle accelerator applications, such as free-electron lasers, and for emerging technologies in quantum computing. Developing advanced materials and their deposition processes to produce RF superconductors that yield nanoohms surface resista...
2302.14410v2
2020-01-07
First principles evaluation of fcc ruthenium for use in advanced interconnects
As the semiconductor industry turns to alternate conductors to replace Cu for future interconnect nodes, much attention as been focused on evaluating the electrical performance of Ru. The typical hexagonal close-packed (hcp) phase has been extensively studied, but relatively little attention has been paid to the face-c...
2001.02216v3
2021-12-12
Electric-field-driven resistive transition in multiferroic SrCo$_2$Fe$_{16}$O$_{27}$/Sr$_3$Co$_2$Fe$_{24}$O$_{41}$composite
We report observation of electric-field-driven resistive transition at a characteristic threshold field $E_{th}(T)$ across a temperature range 10-200 K in an off-stoichiometric composite of (~80 vol%) W- and (~20 vol%) Z-type hexaferrites. The dielectric constant $\epsilon$ and the relaxation time constant $\tau$ too e...
2112.06246v1
2023-02-20
Observation of near room temperature thin film superconductivity of atmospherically stable Ag-Au mesoscopic thin film
An environmentally stable mesoscopic thin film of Au of certain thickness has been deposited thermally on top of a Ag+ implanted oxide substrate to develop a close to room temperature superconductor. This thin film has been deposited in two different stages. Initially, a sol-gel derived ion conducting metal oxide (ICMO...
2302.09974v3
2023-10-11
Absence of topological Hall effect in Fe$_x$Rh$_{100-x}$ epitaxial films: revisiting their phase diagram
A series of Fe$_x$Rh$_{100-x}$ ($30 \leq x \leq 57$) films were epitaxially grown using magnetron sputtering, and were systematically studied by magnetization-, electrical resistivity-, and Hall resistivity measurements. After optimizing the growth conditions, phase-pure Fe$_{x}$Rh$_{100-x}$ films were obtained, and th...
2310.07140v1
2022-06-22
Thermoelectric properties of high-entropy rare-earth cobaltates
High-entropy concept introduced with a promising paradigm to obtain exotic physical properties has motivated us to explore the thermoelectric properties of Sr-substituted high-entropy rare-earth cobaltates i.e., (LaNdPrSmEu)$_{1-x}$Sr$_x$CoO3 (0 \leq x \leq 0.10). The structural analysis of the samples synthesized usin...
2206.11106v1
2005-12-15
The WHO surveillance threshold and the emergence of drug-resistant HIV strains in Botswana
Background: Approximately 40% of adults in Botswana are HIV-infected. The Botswana antiretroviral program began in 2002 and currently treats 34,000 patients with a goal of treating 85,000 patients (~30% of HIV-infected adults) by 2009. We predict the evolution of drug-resistant strains of HIV that may emerge as a conse...
0512032v1
2020-04-10
Strain-engineering the Schottky barrier and electrical transport on MoS2
Strain provides an effective means to tune the electrical properties while retaining the native chemical composition of the material. Unlike three-dimensional solids, two-dimensional materials withstand higher levels of elastic strain making it easier to tune various electrical properties to suit the technology needs. ...
2004.05061v1
2011-08-25
Synthesis, Crystal Growth and Epitaxial Layer Deposition of FeSe0.88 Superconductor and Other Poison Materials by Use of High Gas Pressure Trap System
The FeSe samples in the form of polycrystals, single crystals and thin films have been prepared and characterized. The synthesized material has been hot isostatically pressed under pressure of 0.45 GPa of 5N purity argon with the use of the high gas pressure trap system (HGPTS). Thin films have been fabricated by the m...
1108.5069v1
2021-07-19
Making high-quality quantum microwave devices with van der Waals superconductors
Ultra low-loss microwave materials are crucial for enhancing quantum coherence and scalability of superconducting qubits. Van der Waals (vdW) heterostructure is an attractive platform for quantum devices due to the single-crystal structure of the constituent two-dimensional (2D) layered materials and the lack of dangli...
2107.09147v3
2021-10-21
Phonon anharmonicity: a pertinent review of recent progress and perspective
Anharmonic lattice vibrations govern the thermal dynamics in materials and present how the atoms interact and how they conduct heat. An indepth understanding of the microscopic mechanism of phonon anharmonicity in condensed systems is critical for developing better functional and energy materials. In recent years, a va...
2110.11094v1
2023-01-16
Nonlinear transport in a photo-induced superconductor
Optically driven quantum materials exhibit a variety of non-equilibrium functional phenomena [1-11], which are potentially associated with unique transport properties. However, these transient electrical responses have remained largely unexplored, primarily because of the challenges associated with integrating quantum ...
2301.06425v1
2015-09-03
On the Concept of Cryptographic Quantum Hashing
In the paper we define a notion of quantum resistant ($(\epsilon,\delta)$-resistant) hash function which combine together a notion of pre-image (one-way) resistance ($\epsilon$-resistance) property we define in the paper and the notion of collision resistance ($\delta$-resistance) properties. We show that in the quan...
1509.01268v2
2019-12-11
Observation of excess resistance anomaly at resistive transitions in Ag/Au nanostructures
The resistive transition in nanocomposite films of silver (Ag) nanoclusters of ~ 1 nm diameter embedded in gold (Au) matrix exhibits an anomalous resistance peak at the onset of the transition, even for transition temperatures as high as 260 K. The maximum value of the resistance ranges between ~ 30% - 300% above that ...
1912.05428v1
2020-08-13
Properties of materials considered for improvised masks
During a pandemic in which aerosol and droplet transmission is possible, the demand for masks that meet medical or workplace standards can prevent most individuals or organizations from obtaining suitable protection. Cloth masks are widely believed to impede droplet and aerosol transmission but most are constructed fro...
2008.06001v1
2022-06-01
A Pseudo-Two-Dimensional (P2D) Model for FeS2 Conversion Cathode Batteries
Conversion cathode materials are gaining interest for secondary batteries due to their high theoretical energy and power density. However, practical application as a secondary battery material is currently limited by practical issues such as poor cyclability. To better understand these materials, we have developed a ps...
2206.00647v2
2024-03-12
Physics-Transfer Learning for Material Strength Screening
The strength of materials, like many problems in the natural sciences, spans multiple length and time scales, and the solution has to balance accuracy and performance. Peierls stress is one of the central concepts in crystal plasticity that measures the strength through the resistance of a dislocation to plastic flow. ...
2403.07526v1
2016-06-25
Observation of Optical and Electrical In-plane Anisotropy in High-mobility Few-layer ZrTe5
Transition metal pentatelluride ZrTe5 is a versatile material in condensed-matter physics and has been intensively studied since the 1980s. The most fascinating feature of ZrTe5 is that it is a 3D Dirac semimetal which has linear energy dispersion in all three dimensions in momentum space. Structure-wise, ZrTe5 is a la...
1606.07960v2
2018-09-25
Intrinsic Insulating Ground State in Transition Metal Dichalcogenide TiSe2
The transition metal dichalcogenide TiSe$_2$ has received significant research attention over the past four decades. Different studies have presented ways to suppress the 200~K charge density wave transition, vary low temperature resistivity by several orders of magnitude, and stabilize magnetism or superconductivity. ...
1809.09467v2
2018-08-24
Data-driven Exploration of New Pressure-induced Superconductivity in PbBi$_2$Te$_4$ with Two Transition Temperatures
Candidates compounds for new thermoelectric and superconducting materials, which have narrow band gap and flat bands near band edges, were exhaustively searched by the high-throughput first-principles calculation from an inorganic materials database named AtomWork. We focused on PbBi$_2$Te$_4$ which has the similar ele...
1808.07973v1
2021-03-17
Multi-level resistance switching and random telegraph noise analysis of nitride based memristors
Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices exhibit usually memristive properties with many discrete resistance levels and impl...
2103.09931v1
2021-10-28
Spread and erase -- How electron hydrodynamics can eliminate the Landauer-Sharvin resistance
It has long been realized that even a perfectly clean electronic system harbors a Landauer-Sharvin resistance, inversely proportional to the number of its conduction channels. This resistance is usually associated with voltage drops on the system's contacts to an external circuit. Recent theories have shown that hydrod...
2110.15369v2
2005-08-04
Subharmonic gap structures and Josephson effect in MgB2/Nb micro-constrictions
Superconducting micro-constrictions between Nb tips and high quality MgB$_{2}$ pellets have been realized by means of a point-contact inset, driven by a micrometric screw. Measurements of the current-voltage characteristics and of the dynamical conductance versus bias have been performed in the temperature range betwee...
0508137v2
2007-02-02
Dependence of electronic structure of SrRuO3 and the degree of correlation on cation off-stoichiometry
We have grown and studied high quality SrRuO3 films grown by MBE as well as PLD. By changing the oxygen activity during deposition we were able to make SrRuO3 samples that were stoichiometric (low oxygen activity) or with ruthenium vacancies (high oxygen activity). Samples with strontium vacancies were found impossible...
0702050v1
2007-11-17
Development of New Hole-Type Avalanche Detectors and the First Results of their Applications
We have developed a new detector of photons and charged particles- a hole-type structure with electrodes made of a double layered resistive material: a thin low resistive layer coated with a layer having a much higher resistivity. One of the unique features of this detector is its capability to operate at high gas gain...
0711.2747v1
2010-10-29
Analytical method for parameterizing the random profile components of nanosurfaces imaged by atomic force microscopy
The functional properties of many technological surfaces in biotechnology, electronics, and mechanical engineering depend to a large degree on the individual features of their nanoscale surface texture, which in turn are a function of the surface manufacturing process. Among these features, the surface irregularities a...
1010.6232v1
2013-04-04
Non-contact method for measurement of the microwave conductivity of graphene
We report a non-contact method for conductivity and sheet resistance measurements of graphene samples using a high Q microwave dielectric resonator perturbation technique, with the aim of fast and accurate measurement of microwave conductivity and sheet resistance of monolayer and few layers graphene samples. The dynam...
1304.1304v1
2016-02-03
Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds
We present the magnetic field dependencies of transport properties for $R$PtBi ($R$ = Gd, Dy, Tm, and Lu) half-Heusler compounds. Temperature and field dependent resistivity measurements of high quality $R$PtBi single crystals reveal an unusually large, non-saturating magnetoresistance (MR) up to 300 K under a moderate...
1602.01194v1
2018-06-07
A Timing RPC with low resistive ceramic electrodes
For precise start time determination a Beam Fragmentation T$_0$ Counter (BFTC) is under development for the Time-of-Flight Wall of the Compressed Baryonic Matter Spectrometer (CBM) at the Facility for Antiproton and Ion Research (FAIR) at Darmstadt/Germany. This detector will be located around the beam pipe, covering t...
1806.02629v2
2019-05-07
Single-parameter scaling in the magnetoresistance of optimally doped La$_{2-x}$Sr$_{x}$CuO$_4$
We show that the recent magnetoresistance data on thin-film La$_{2-x}$Sr$_{x}$CuO$_4$ (LSCO) in strong magnetic fields ($B$) obeys a single-parameter scaling of the form MR$(B,T)=f(\mu_H(T)B)$, where $\mu_H^{-1}(T)\sim T^{\alpha}$ ($1\le\alpha\le2$), from $T=180$K until $T\sim20$K, at which point the single-parameter s...
1905.02737v1
2021-01-18
Intrinsic hysteresis in the presumed superconducting transition of hydrides under high pressure
Superconducting transitions in the absence of magnetic field should be non-hysteretic. Here we address the fact that the drops in electrical resistance that have been interpreted as evidence of superconductivity in several hydrides under high pressure (so-called "superhydrides") show hysteresis. We argue that the exper...
2101.07208v4
2021-03-27
Tesla's fluidic diode and the electronic-hydraulic analogy
Reasoning by analogy is powerful in physics for students and researchers alike, a case in point being electronics and hydraulics as analogous studies of electric currents and fluid flows. Around 100 years ago, Nikola Tesla proposed a flow control device intended to operate similarly to an electronic diode, allowing flu...
2103.14813v1
2021-08-19
Measurement of the Low-temperature Loss Tangent of High-resistivity Silicon with a High Q-factor Superconducting Resonator
In this letter, we present the direct loss tangent measurement of a high-resistivity intrinsic (100) silicon wafer in the temperature range from ~ 70 mK to 1 K, approaching the quantum regime. The measurement was performed using a technique that takes advantage of a high quality factor superconducting niobium resonator...
2108.08894v5
2007-06-01
High-Tc superconductivity originated from strong spin-charge correlation: indication from linear temperature dependence of resistivity
Both the highest- and the linear temperature dependence of the resistivity in wide temperature range appear at the optimally doped regions of Cu-based superconductors1,2,3,4,5, and the highest- of Fe-based superconductors6,7 are also associated with the linear temperature dependence of the resistivity in normal states ...
0706.0059v2
2023-08-30
Investigation of W-SiC compositionally graded films as a divertor material
W-SiC composite material is a promising plasma-facing material candidate alternative to pure W due to the low neutron activation, low impurity radiation, and low tritium diffusivity of SiC while leveraging the high erosion resistance of the W armor. Additionally, W and SiC have high thermomechanical compatibility given...
2308.16358v2
1999-09-28
Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field
Magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As have been investigated. Measurements at low temperature (50 mK) and high magnetic field (<= 27 T) have been employed in order to determine the hole concentration p = 3.5x10^20 cm ^-3 of a metallic (Ga0.947Mn0.053)As layer. The analysis of the temperat...
9909393v1
2003-09-28
Electron-Phonon Scattering in Metallic Single-Walled Carbon Nanotubes
Electron scattering rates in metallic single-walled carbon nanotubes are studied using an atomic force microscope as an electrical probe. From the scaling of the resistance of the same nanotube with length in the low and high bias regimes, the mean free paths for both regimes are inferred. The observed scattering rates...
0309641v1
1998-10-26
High frequency magneto-impedance of double perovskite $La_{1.2}Sr_{1.8}Mn_{2}O_{7}$: secondary transitions at high temperatures
Radio frequency magneto-impedance measurements clearly reveal a pronounced anomaly at 260K besides the main MI transition at 125K in the double perovskite material $La_{1.2}Sr_{1.8}Mn_{2}O_{7}$. This feature is not seen clearly in static resistivity and magnetization measurements. We suggest that this anomaly represent...
9810351v2
1999-04-29
Consilience of High-Tc Theories
Improvements both in the quality and in the variety of experiments on high-temperature superconductors have yielded new insights into the microscopic origins of pairing. A number of competing theories have already been ruled out. Some of the more promising descriptions -- gauge theories, coupled-chains, nesting instabi...
9904437v1
1999-09-03
A thermostable trilayer resist for niobium lift-off
We have developped a novel lift-off process for fabrication of high quality superconducting submicron niobium structures. The process makes use of a thermostable polymer with a high transition temperature T_{g}= 235 C and an excellent chemical stability. The superconducting critical temperature of 100 nm wide niobium l...
9909053v1
2003-10-29
Ultrasonic Defect Modification in Irradiated Silicon
It is shown for the first time, that room temperature Ultrasonic Defect Manipulation (UDM) can significantly reduce the concentration of radiation defects in high resistivity silicon. Secondary Ion Mass Spectroscopy revealed that oxygen- and hydrogen- related chemical reactions in silicon are likely to occur under UDM ...
0310675v1
2004-08-24
Barrier layer formation and PTCR effect in (1-x) Pb(Fe1/2Nb1/2)O3]-xPbTiO3 (x = 0.13) ceramics
(1-x)Pb(Fe1/2Nb1/2)O3-PbTiO3(PFN-xPT)Ceramics with x = 0.13 sintered at 1473K show diffuse phase transition and very high dielectric constant at lower frequencies.The high value of dielectric constant at lower frequencies is shown to be due to the barrier layer formation.The resistivity of the PFN-xPT ceramics, obtaine...
0408509v1
2005-02-06
Model for a Macroscopically Disordered Conductor with an Exactly Linear High-Field Magnetoresistance
We calculate the effective resistivity of a macroscopically disordered two dimensional conductor consisting of two components in a perpendicular magnetic field. When two components have equal area fractions, we use a duality theorem to show that the magnetoresistance is non-saturating and at high fields varies exactly ...
0502162v2
2007-07-28
Performances of a Newly High Sensitive Trilayer F/Cu/F GMI Sensor
We have selected stress-annealed nanocrystalline Fe-based ribbons for ferromagnetic/copper/ferromagnetic sensors exhibiting high magneto-impedance ratio. Longitudinal magneto-impedance reaches 400% at 60 kHz and longitudinal magneto-resistance increases up to 1300% around 200 kHz.
0707.4232v2
2009-09-25
Spin Injection Enhancement Through Schottky Barrier Superlattice Design
We predict it is possible to achieve high-efficiency room-temperature spin injection from a mag- netic metal into InAs-based semiconductors using an engineered Schottky barrier based on an InAs/AlSb superlattice. The Schottky barrier with most metals is negative for InAs and positive for AlSb. For such metals there exi...
0909.4594v1
2009-11-29
Current driven discontinuous insulator-metal transition and colossal low-field magnetoresistance in Sm0.6Sr0.4MnO3
It is shown that with increasing magnitude of current (I), resistivity of Sm0.6Sr0.4MnO3 transforms from a smooth to a discontinuous insulator-metal transition which is also accompanied by an abrupt decrease in temperature of the sample. We report colossal low-field magnetoresistance under a high current bias (-99% at ...
0911.5491v1
2010-03-26
Superconductor terahertz metamaterial
We characterize the behaviour of split ring resonators made up of high-transition temperature YBCO superconductor using terahertz time domain spectroscopy. The superconductor metamaterial shows sharp change in the transmission spectrum at the fundamental inductive-capacitive resonance and the dipole resonance as the te...
1003.5169v1
2013-08-15
Low Temperature Nanoscale Electronic Transport on the MoS_2 surface
Two-probe electronic transport measurements on a Molybdenum Disulphide (MoS_2) surface were performed at low temperature (30K) under ultra-high vacuum conditions. Two scanning tunneling microscope tips were precisely positioned in tunneling contact to measure the surface current-voltage characteristics. The separation ...
1308.3299v1
2014-02-27
Nonlinear conductivity in CaRuO3 thin films measured by short current pulses
Metals near quantum critical points have been predicted to display universal out-of equilibrium behavior in the steady current-carrying state. We have studied the non-linear conductivity of high-quality CaRuO$_3$ thin films with residual resistivity ratio up to 57 using micro-second short, high-field current pulses at ...
1402.6845v1
2015-02-02
Electrical and magnetic properties of La$_{0.5}$Rh$_4$Sb$_{12}$ filled skutterudite synthesized at high pressure
A filled skutterudite, La$_{0.5}$Rh$_4$Sb$_{12}$, with a lattice constant of 9.284(2) {\AA} was synthesized using a high-pressure technique. The electrical resistivity showed semiconducting behavior and the energy gap was estimated to be more than 0.08 eV. Magnetic susceptibility measurements indicated temperature-inde...
1502.00337v2
2016-01-12
Melting of B12P2 boron subphosphide under pressure
Melting of boron subphosphide (B12P2) to 26 GPa has been studied by in situ synchrotron X-ray powder diffraction in a laser-heated diamond anvil cell, and by quenching and electrical resistance measurements in a toroid-type high-pressure apparatus. B12P2 melts congruently, and the melting curve has a positive slope of ...
1601.02930v1
2016-02-23
Preparation of Silver and Silver-backing self-supported thin targets by high vacuum evaporation
We have produced in the Nuclear Physics Center in Lisbon thin film self-supported targets of Ag, LiF/Ag and CaF$_2$/Ag by a high vacuum resistance evaporation method. The production setup, materials, methods, characterization and results are described.
1602.07172v2
2016-05-09
Highly Non-linear and Reliable Amorphous Silicon Based Back-to-Back Schottky Diode as Selector Device for Large Scale RRAM Arrays
In this work we present silicon process compatible, stable and reliable ($>10^{8}$cycles), high non-linearity ratio at half-read voltage ($>5\times 10^{5}$), high speed ($<60ns$) low operating voltage ($<2V$) back-to-back Schottky diodes. Materials choice of electrode, thickness of semiconductor layer and doping level ...
1605.02757v1
2016-07-19
Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping
In this letter, a new approach to chemically dope black phosphorus (BP) is presented, which significantly enhances the device performance of BP field-effect transistors for an initial period of 18 h, before degrading to previously reported levels. By applying 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCN...
1607.05760v1
2018-04-04
Ultra-high Vacuum Deposition of Higher Manganese Silicide Mn4Si7 Thin Films
We have successfully grown one of the higher manganese silicides, Mn4Si7 thin films on silicon (100) substrates using an ultra-high vacuum deposition with a base pressure of 1x10-9 torr. The thickness of the film was varied from 65-100 nm. These films exhibit a tetragonal crystal structure and display paramagnetic beha...
1804.01604v1
2018-04-09
Superconductivity in REO0.5F0.5BiS2 with high-entropy-alloy-type blocking layers
We synthesized new REO0.5F0.5BiS2 (RE: rare earth) superconductors with the high-entropy-alloy-type (HEA-type) REO blocking layers. According to the RE concentration and the RE ionic radius, the lattice constant of a systematically changed in the HEA-type samples. A sharp superconducting transition was observed in the ...
1804.02880v2
2020-09-01
Solute softening and vacancy generation by diffusion-less climb in magnesium alloys
Active room temperature diffusion-less climb of the <a> edge dislocations in model Mg-Al alloys was observed using molecular dynamics simulations. Dislocations on prismatic and pyramidal I planes climb through the basal plane to overcome solute obstacles. This out-of-plane dislocation motion softens the high resistance...
2009.00656v1
2020-06-20
Can an amorphous crystallize into a high entropy alloy?
On the premise that amorphous-HEA composites could demonstrate high toughness and resistance to embrittlement akin to the phase separating glassy-solid solution composites, we develop a thermodynamics based approach to identify chemical compositions capable of undergoing the amorphous to HEA transformation. We introduc...
2006.11579v1
2015-03-20
Bottom-up assembly of metallic germanium
Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material,[1] a light emitting medium in silicon-integrated lasers,[2,3] and a p...
1503.05994v1
2014-08-06
Permanent magnet with MgB2 bulk superconductor
Superconductors with persistent zero-resistance currents serve as permanent magnets for high-field applications requiring a strong and stable magnetic field, such as magnetic resonance imaging (MRI). The recent global helium shortage has quickened research into high-temperature superconductors (HTSs) materials that can...
1408.1277v1
2014-08-20
In-situ hydrogen charging of zirconium powder to study isothermal percipitation of hydrides and determination of Zr-hydride crystal structure
Zirconium alloys are widely used in the nuclear industry because of their high strength, good corrosion resistance and low neutron absorption cross-section. However, zirconium has strong affinity for hydrogen which leads to hydrogen concentration build-up over time. It is well known that the formation of hydrides will ...
1408.4665v1
2022-12-02
Ablation threshold and temperature dependent thermal conductivity of high entropy carbide thin films
High entropy carbides (HECs) are a promising new class of ultra-high temperature ceramics that could provide novel material solutions for leading edges of hypersonic vehicles, which can reach temperatures above 3500C and experience extreme thermal gradients. Although the mechanical and thermal properties of HECs have b...
2212.01238v1
2023-10-18
A New Class of Materials Based on Nanoporous High Entropy Alloys with Outstanding Properties
Nanoporous metals with a random, bicontinuous structure of both pores and ligaments exhibit many unique mechanical properties, but their technical applications are often limited by their intrinsic brittleness under tensile strain triggered by fracture of the weakest ligaments. Here, we use molecular dynamics simulation...
2310.11937v1
1996-09-20
High Temperature Thermopower in La_{2/3}Ca_{1/3}MnO_3 Films: Evidence for Polaronic Transport
Thermoelectric power, electrical resistivity and magnetization experiments, performed in the paramagnetic phase of La_{2/3}Ca_{1/3}MnO_3, provide evidence for polaron-dominated conduction in CMR materials. At high temperatures, a large, nearly field-independent difference between the activation energies for resistivity...
9609212v1
2000-01-25
Influence of high-energy electron irradiation on the transport properties of La_{1-x}Ca_{x}MnO_{3} films (x \approx 1/3)
The effect of crystal lattice disorder on the conductivity and colossal magnetoresistance in La_{1-x}Ca_{x}MnO_{3} (x \approx 0.33) films has been examined. The lattice defects are introduced by irradiating the film with high-energy (\simeq 6 MeV) electrons with a maximal fluence of about 2\times 10^{17} cm^{-2}. This ...
0001372v1
2001-07-27
Lattice coupled first order magnetoresistance transition in an A-type antiferromagnet: Pr$_{0.46}$Sr$_{0.54}$MnO$_3$
We investigated magnetic, magnetotransport and magnetostriction properties of the A-type antiferromagnet Pr$_{0.46}$Sr$_{0.54}$MnO$_3$ which undergoes a first order paramagnetic-antiferromagnetic transition below T$_N$ = 210 K while cooling and T$_N$ = 215 K while warming. The zero field ($\mu_0$H = 0 T) resistivity sh...
0107560v1
2001-09-04
Magnetotransport in a bi-crystal film of La_0.7Sr_0.3MnO_3
Transport properties of an epitaxial film of La_0.7Sr_0.3MnO_3 (LSMO), deposited epitaxially on a LaAlO_3 bi-crystal substrate having a misorientation angle of 9.2 deg., have been studied. The film was patterned into a meander containing 100 grain boundaries. The resistivity of the sample exhibits two components; one...
0109052v1
2002-08-20
Fabrication and properties of gallium metallic photonic crystals
Gallium metallic photonic crystals with 100% filling factor have been fabricated via infiltration of liquid gallium into opals of 300-nm silica spheres using a novel high pressure-high temperature technique. The electrical resistance of the Ga-opal crystals was measured at temperatures from 10 to 280 K. The data obtain...
0208392v1
2002-09-24
High Curie temperature GaMnAs obtained by resistance-monitored annealing
We show that by annealing Ga1-xMnxAs thin films at temperatures significantly lower than in previous studies, and monitoring the resistivity during growth, an unprecedented high Curie temperature Tc and conductivity can be obtained. Tc is unambiguously determined to be 118 K for Mn concentration x=0.05, 140 K for x=0.0...
0209554v1
2003-10-09
RF Surface Resistance of a HIPped MgB2 Sample at 21 GHz
Magnesium diboride (MgB2) is attractive for RF cavity application for particle accelerators because it might not show an increase of RF surface losses at high magnetic surface fields, a phenomenon that has prevented high-Tc superconducting materials such as YBCO from being used for this application. We have measured th...
0310213v1
2004-08-31
Normal state properties of high angle grain boundaries in (Y,Ca)Ba2Cu3O7-delta
By lithographically fabricating an optimised Wheatstone bridge geometry, we have been able to make accurate measurements of the resistance of grain boundaries in Y1-xCaxBa2Cu3O7-d between the superconducting transition temperature, Tc, and room temperature. Below Tc the normal state properties were assessed by applying...
0409004v1
2005-07-06
Oxidation Resistant Germanium Nanowires: Bulk Synthesis, Long Chain Alkanethiol Functionalization and Langmuir-Blodgett Assembly
A simple method is developed to synthesize gram quantities of uniform Ge nanowires (GeNWs) by chemical vapor deposition on preformed, monodispersed seed-particles loaded onto high surface area silica support. Various chemical functionalization schemes are investigated to passivate the GeNW surfaces using alkanethiols a...
0507145v2
2006-03-08
Nanoscopic processes of Current Induced Switching in thin tunnel junctions
In magnetic nanostructures one usually uses a magnetic field to commute between two resistance (R) states. A less common but technologically more interesting alternative to achieve R-switching is to use an electrical current, preferably of low intensity. Such Current Induced Switching (CIS) was recently observed in thi...
0603208v1
2007-04-13
Counting and manipulating single electrons using a carbon nanotube transistor
We report on the electric measurements of an individual Au nanoparticle with an ultra-high contact resistance of about $10^{19} \Omega$. The high-impedance measurements have been carried out by counting the electrons that are transferred onto the particle. In order to do this, a carbon nanotube is used as the electrode...
0704.1794v1
2007-07-17
Positive and negative pressure effects on the magnetic ordering and the Kondo effect in the compound Ce2RhSi3
The competition between magnetic ordering and the Kondo effect in Ce2RhSi3, ordering antiferromagnetically at 7 K, is investigated by the measurements of magnetization, heat capacity and electrical resistivity on the solid solutions, Ce(2-x)La(x)RhSi3, Ce(2-y)Y(y)RhSi3, and Ce2RhSi(3-z)Ge(z), as well as by high pressur...
0707.2518v1
2007-09-05
Thickness-dependence of the electronic properties in V2O3 thin films
High quality vanadium sesquioxide V2O3 films (170-1100 {\AA}) were grown using the pulsed laser deposition technique on (0001)-oriented sapphire substrates, and the effects of film thickness on the lattice strain and electronic properties were examined. X-ray diffraction indicates that there is an in-plane compressive ...
0709.0692v1
2008-06-09
Superconductivity in single crystals of LaFePO
Single crystals of the compound LaFePO were prepared using a flux growth technique at high temperatures. Electrical resistivity measurements reveal metallic behavior and a resistive transition to the superconducting state at a critical temperature T_c ~ 6.6 K. Magnetization measurements also show the onset of supercond...
0806.1265v2
2009-08-23
Superconductivity at high Tc in neodymium-doped 1111-SrFeAsF system
Polycrystalline Sr1-xNdxFeAsF samples were prepared at various Nd-doping levels using both a stoichiometric mixture of the starting materials and in slight excess amounts of FeAs. Susceptibility and resistivity of the samples were studied down to 4 K revealing a probable coexistence of superconductivity and a magnetic ...
0908.3285v3
2011-06-29
Hysteretic magnetoresistance and thermal bistability in a magnetic two-dimensional hole system
Colossal negative magnetoresistance and the associated field-induced insulator-to-metal transition, the most characteristic features of magnetic semiconductors, are observed in n-type rare earth oxides and chalcogenides, p-type manganites, n-type and p-type diluted magnetic semiconductors (DMS) as well as in quantum we...
1106.5832v1
2011-09-06
Evolution of transport properties of BaFe2-xRuxAs2 in a wide range of isovalent Ru substitution
The effects of isovalent Ru substitution at the Fe sites of BaFe2-xRuxAs2 are investigated by measuring resistivity and Hall coefficient on high-quality single crystals in a wide range of doping (0 < x < 1.4). Ru substitution weakens the antiferromagnetic (AFM) order, inducing superconductivity for relatively high dopi...
1109.1083v1
2012-09-06
High-temperature thermoelectric properties of the double-perovskite ruthenium oxide (Sr$_{1-x}$La$_x$)$_2$ErRuO$_6$
We have prepared polycrystalline samples of (Sr$_{1-x}$La$_x$)$_2$ErRuO$_6$ and (Sr$_{1-x}$La$_x$)$_2$YRuO$_6$, and have measured the resistivity, Seebeck coefficient, thermal conductivity, susceptibility and x-ray absorption in order to evaluate the electronic states and thermoelectric properties of the doped double-p...
1209.1250v1
2012-10-12
Simultaneous measurement of pressure evolution of crystal structure and superconductivity in FeSe0.92 using designer diamonds
Simultaneous high pressure x-ray diffraction and electrical resistance measurements have been carried out on a PbO type {\alpha}-FeSe0.92 compound to a pressure of 44 GPa and temperatures down to 4 K using designer diamond anvils at synchrotron source. At ambient temperature, a structural phase transition from a tetrag...
1210.3645v1
2012-11-20
Optically excited multi-band conduction in LaAlO3/SrTiO3 heterostructures
The low-temperature resistance of a conducting LaAlO3/SrTiO3 interface with a 10 nm thick LaAlO3 film decreases by more than 50% after illumination with light of energy higher than the SrTiO3 band-gap. We explain our observations by optical excitation of an additional high mobility electron channel, which is spatially ...
1211.4778v1
2013-12-04
Physical characteristics and cation distribution of NiFe2O4 thin films with high resistivity prepared by reactive co-sputtering
We fabricated NiFe2O thin films on MgAl2O4 (001) substrates by reactive dc magnetron co-sputtering in a pure oxygen atmosphere at different substrate temperatures. The film properties were investigated by various techniques with a focus on their structure, surface topography, magnetic characteristics, and transport pro...
1312.1086v1
2013-12-13
Low-energy electronic properties of clean CaRuO$_3$: elusive Landau quasiparticles
We have prepared high-quality epitaxial thin films of CaRuO$_3$ with residual resistivity ratios up to 55. Shubnikov-de Haas oscillations in the magnetoresistance and a $T^2$ temperature dependence in the electrical resistivity only below 1.5 K, whose coefficient is substantially suppressed in large magnetic fields, es...
1312.3809v1
2017-10-18
Near-thermal limit gating in heavily-doped III-V semiconductor nanowires using polymer electrolytes
Doping is a common route to reducing nanowire transistor on-resistance but has limits. High doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be doping in our GaAs nanowires is so high that traditional metal-oxid...
1710.06950v2
2018-02-02
Magneto-transport properties of proposed triply degenerate topological semimetal Pd$_{3}$Bi$_{2}$S$_{2}$
We report transport properties of single-crystalline Pd$_{3}$Bi$_{2}$S$_{2}$, which has been predicted to host an unconventional electronic phase of matter beyond three-dimensional Dirac and Weyl semimetals. Similar to several topological systems, the resistivity shows field induced metal-semiconductor-like crossover a...
1802.00712v2
2019-09-17
Spin-Orbit-Torque Field-Effect Transistor (SOTFET): Proposal for a New Magnetoelectric Memory
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high durability. The recent availability of multiferroic materials provides an opportunity...
1909.08133v3
2017-03-09
Transport properties of iron at the Earth's core conditions: the effect of spin disorder
The electronic and thermal transport properties of the Earth's core are crucial for many geophysical models such as the geodynamo model of the Earth's magnetic field and of its reversals. Here we show, by considering bcc-iron and iron-rich iron-silicon alloy as a representative of the Earth's core composition and apply...
1703.03205v3
2020-04-07
Large-scalable fabrication of improved Bi-Te-based flexible thermoelectric modules using a semiconductor manufacturing process
Among the several flexible thermoelectric modules in existence, sintered Bi-Te-based modules represent a viable option because of their high output power density and flexibility, which enables the use of arbitrary heat sources. We have fabricated Bi-Te-based modules with a large-scalable fabrication process and improve...
2004.03068v1
2020-09-24
Pressure-Temperature Phase Diagram of $α$-Mn
Electrical resistivity and ac-susceptibility measurements under high pressure were carried out in high-quality single crystals of $\alpha$-Mn. The pressure-temperature phase diagram consists of an antiferromagnetic ordered phase (0<$P$<1.4 GPa, $T<T_{\rm N}$), a pressure-induced ordered phase (1.4<$P$<4.2-4.4 GPa, $T<T...
2009.11488v1
2012-01-09
Physical properties of $A_x$Fe$_{2-y}$S$_2$ ($A$=K, Rb and Cs) single crystals
We successfully synthesized two new compounds Rb$_x$Fe$_{2-y}$S$_2$ and Cs$_x$Fe$_{2-y}$S$_2$ which were isostructural with K$_x$Fe$_{2-y}$Se$_2$ superconductor. We systematically investigated the resistivity, magnetism and thermoelectric power of $A_x$Fe$_{2-y}$S$_2$ ($A$=K, Rb and Cs) single crystals. High temperatur...
1201.1709v1
2019-03-12
Single-crystal growth and extremely high H_c2 of 12442-type Fe-based superconductor KCa_2Fe_4As_4F_2
Millimeter sized single crystals of KCa_2Fe_4As_4F_2 were grown using a self-flux method. The chemical compositions and crystal structure were characterized carefully. Superconductivity with the critical transition T_c = 33.5 K was confirmed by both the resistivity and magnetic susceptibility measurements. Moreover, th...
1903.04822v1