publicationDate stringlengths 10 10 | title stringlengths 17 233 | abstract stringlengths 20 3.22k | id stringlengths 9 12 |
|---|---|---|---|
2020-06-28 | Design of a $β$-Ga$_2$O$_3$ Schottky Barrier Diode With p-type III-Nitride Guard Ring for Enhanced Breakdown | This work presents the electrostatic analysis of a novel Ga$_2$O$_3$ vertical
Schottky diode with three different guard ring configurations to reduce the
peak electric field at the metal edges. Highly doped p-type GaN, p-type
nonpolar AlGaN and polarization doped graded p-AlGaN are simulated and analyzed
as the guard r... | 2006.15645v1 |
2020-10-01 | Impurity Band Conduction in Si-doped \b{eta}-Ga2O3 Films | By combining temperature-dependent resistivity and Hall effect measurements,
we investigate donor state energy in Si-doped \b{eta}-Ga2O3 films grown using
metal-organic vapor phase epitaxy (MOVPE). High magnetic field Hall effect
measurements (H = +/-90 kOe) showed non-linear Hall resistance for T < 150 K
revealing two... | 2010.00193v1 |
2021-03-31 | Slip band interactions and GND latent hardening in a galling resistant stainless steel | Slip activation, slip band interactions, and GND densities in iron-base,
galling resistant alloy Nitronic 60 have been characterised at the grain length
scale using small-scale mechanical testing with high resolution digital image
correlation and high-angular resolution electron backscatter diffraction. By
correlating ... | 2103.16864v1 |
2021-06-10 | Anomalous charge transport of superconducting Cu$_{x}$PdTe$_2$ under high pressure | By means of high-pressure resistivity measurements on single crystals, we
investigate the charge transport properties of Cu$_x$PdTe$_2$, notable for the
combination of topological type-II Dirac semimetallic properties with
superconductivity up to $T_c = 2.5$ K. In both cases of pristine ($x = 0$) and
intercalated ($x=0... | 2106.05613v1 |
2021-06-18 | Coulomb Drag between a Carbon Nanotube and Monolayer Graphene | We have measured Coulomb drag between an individual single-walled carbon
nanotube (SWNT) as a one-dimensional (1D) conductor and the two-dimensional
(2D) conductor monolayer graphene, separated by a few-atom-thick boron nitride
layer. The graphene carrier density is tuned across the charge neutrality point
(CNP) by a g... | 2106.10246v2 |
2021-06-25 | Direct microscopic evidence of shear induced graphitization of ultrananocrystalline diamond films | The origin of ultralow friction and high wear resistance in
ultrananocrystalline diamond (UNCD) films is still under active debate because
of the perplexed tribochemistry at the sliding interface. Herein, we report a
comparative study on surface topography and nanoscale friction of tribofilms,
in wear tracks of two set... | 2106.13778v1 |
2023-02-15 | Metal-bonded Atomic Layers of Transition Metal Carbides (MXenes) | Although two-dimensional transition metal carbides and nitrides (MXenes) have
fantastic physical and chemical properties as well as wide applications, it
remains challenging to produce stable MXenes due to their rapid structural
degradation. Here, unique metal-bonded atomic layers of transition metal
carbides with high... | 2302.07720v1 |
2023-03-22 | A mixed-dimensional model for direct current simulations in presence of a thin high-resistivity liner | In this work we present a mixed-dimensional mathematical model to obtain the
electric potential and current density in direct current simulations when a
thin liner is included in the modelled domain. The liner is used in landfill
management to prevent leakage of leachate from the waste body into the
underground and is ... | 2303.12469v1 |
2006-02-03 | Frequency quenching of microwave induced resistance oscillations in a high mobility two-dimensional electron gas | The frequency dependence of microwave-induced resistance oscillations (MIROs)
has been studied experimentally in high-mobility electron GaAs/AlGaAs
structures to explore the limits at which these oscillations can be observed.
It is found that in dc transport experiments at frequencies above 120 GHz,
MIROs start to quen... | 0602079v2 |
2010-09-15 | Controlling electron-phonon interactions in graphene at ultra high carrier densities | We report on the temperature dependent electron transport in graphene at
different carrier densities $n$. Employing an electrolytic gate, we demonstrate
that $n$ can be adjusted up to 4$\times10^{14}$cm$^{-2}$ for both electrons and
holes. The measured sample resistivity $\rho$ increases linearly with
temperature $T$ i... | 1009.2988v1 |
2010-11-02 | Chirality-dependent phonon-limited resistivity in multiple layers of graphene | We develop a theory for the temperature and density dependence of
phonon-limited resistivity $\rho(T)$ in bilayer and multilayer graphene, and
compare with the corresponding monolayer result. For the unscreened case, we
find $\rho \approx C T$ with $C \propto v_{\rm F}^{-2}$ in the high-temperature
limit, and $\rho \ap... | 1011.0741v2 |
2011-07-21 | Observations of two-dimensional quantum oscillations and ambipolar transport in the topological insulator Bi2Se3 achieved by Cd doping | We present a defect-engineering strategy to optimize the transport properties
of the topological insulator Bi2Se3 to show a high bulk resistivity and clear
quantum oscillations. Starting with a p-type Bi2Se3 obtained by combining Cd
doping and a Se-rich crystal-growth condition, we were able to observe a
p-to-n-type co... | 1107.4178v2 |
2016-04-13 | Long Term Performance Studies of Large Oil-Free Bakelite Resistive Plate Chamber | Several high energy physics and neutrino physics experiments worldwide
require large-size RPCs to cover wide acceptances. The muon tracking systems in
the Iron calorimeter (ICAL) in the INO experiment, India and the near detector
in DUNE at Fermilab are two such examples. A (240 cm $\times$ 120 cm $\times$
0.2 cm) bake... | 1604.03668v2 |
2016-07-25 | Influencia del potencial de polarización en la deposición de películas delgadas de NiO | Nickel oxide (NiO) is a binary compound with a lot of applications in the
present technology. NiO thin films were deposited by reactive sputtering
magnetron under several voltage biases applied in the glass substrates (0, 50,
100, 200, 300, 400 and 500 V). Films were characterized by profilometry, X-ray
diffraction, el... | 1607.07391v1 |
2017-01-29 | Built-in Homojunction Dominated Intrinsically Rectifying-Resistive Switching in NiO Nanodots for Selection Device-Free Memory Application | The intrinsically rectifying-resistive switching (IR-RS) has been regarded as
an effective way to address the crosstalk issue, due to the Schottky diodes
formed at the metal/oxide interfaces in the ON states to suppress the sneak
current at reverse biases. In this letter, we report for the first time another
type of IR... | 1702.05665v1 |
2018-02-20 | Perturbation theories behind thermal mode spectroscopy for high-accuracy measurement of thermal diffusivity of solids | Thermal mode spectroscopy (TMS) has been recently proposed for accurately
measuring thermal diffusivity of solids from a temperature decay rate of a
specific thermal mode selected by three- dimensional (anti)nodal information
[Phys. Rev. Lett., 117, 195901 (2016)]. In this paper, we find out the
following advantages of... | 1802.07378v2 |
2020-02-28 | Hydrodynamic and ballistic transport over large length scales in GaAs/AlGaAs | We study hydrodynamic and ballistic transport regimes through nonlocal
resistance measurements and high-resolution kinetic simulations in a mesoscopic
structure on a high-mobility two-dimensional electron system in a GaAs/AlGaAs
heterostructure. We evince the existence of collective transport phenomena in
both regimes ... | 2002.12806v3 |
2019-03-07 | Fe-Sn nanocrystalline films for flexible magnetic sensors with high thermal stability | The interplay of magnetism and spin-orbit coupling on an Fe kagome lattice in
Fe3Sn2 crystal produces a unique band structure leading to an order of
magnitude larger anomalous Hall effect than in conventional ferromagnetic
metals. In this work, we demonstrate that Fe-Sn nanocrystalline films also
exhibit a large anomal... | 1903.02689v1 |
2021-01-25 | Statics and Dynamics of Space-Charge-Layers in Polarized Inorganic Solid Electrolytes | The quest for safe high-energy batteries with "5V-class" cathodes and lithium
metal anodes drives research into solid electrolytes. However, reasons for the
large charge transfer resistances -- the major bottleneck of all-solid-state
batteries -- are still debated. In this article, we explore the processes in
incompres... | 2101.10294v1 |
2015-06-01 | High-pressure study of the Weyl semimetal NbAs | We performed a series of high-pressure synchrotron X-ray diffraction (XRD)
and resistance measurements on the Weyl semimetal NbAs. The crystal structure
remains stable up to 26 GPa according to the powder XRD data. The resistance of
NbAs single crystal increases monotonically with pressure at low temperature.
Up to 20 ... | 1506.00374v2 |
2020-08-14 | High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP | We report the electronic properties of single crystals of candidate
nodal-line semimetal CaAgP. The transport properties of CaAgP are understood
within the framework of a hole-doped nodal-line semimetal. In contrast,
Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magnetic
fields and a strong decrea... | 2008.06188v1 |
2020-12-19 | Anomalous behavior in high-pressure carbonaceous sulfur hydride | A new experimental study by Snider et al. [Nature 586, 373-377 (2020)]
reported behavior in a high-pressure carbon-sulfur-hydrogen system that has
been interpreted by the authors as superconductivity at room temperature. The
sudden drop of electrical resistance at a critical temperature and the change
of the R vs. T be... | 2012.10771v3 |
2021-02-23 | High magnetic field induced crossover from the Kondo to Fermi liquid behavior in 1$T$-VTe$_{2}$ single crystals | The magnetic and magnetotransport properties of metallic 1$T$-VTe$_{2}$
single crystals were investigated at temperatures from 1.3 to 300 K and in
magnetic fields up to 35 T. Upon applying a high magnetic field, it is found
that the electrical resistivity displays a crossover from the logarithmic
divergence of the sing... | 2102.11444v1 |
2021-02-26 | Crossover from itinerant to localized states in the thermoelectric oxide [Ca$_2$CoO$_3$]$_{0.62}$[CoO$_2$] | The layered cobaltite [Ca$_2$CoO$_3$]$_{0.62}$[CoO$_2$], often expressed as
the approximate formula Ca$_3$Co$_4$O$_9$, is a promising candidate for
efficient oxide thermoelectrics but an origin of its unusual thermoelectric
transport is still in debate. Here we investigate \textit{in-plane} anisotropy
of the transport ... | 2102.13250v1 |
2021-11-03 | Devices for Thermal Conductivity Measurements of Electroplated Bi for X-ray TES Absorbers | Electroplated Bismuth (Bi) is commonly used in Transition-Edge Sensors (TESs)
for X-rays because of its high stopping power and low heat capacity.
Electroplated Bi is usually grown on top of another metal that acts as seed
layer, typically gold (Au), making it challenging to extrapolate its
thermoelectric properties. I... | 2111.02503v1 |
2021-11-09 | Absence of decoherence in the electron-wall system | Decoherence is associated with a dissipative environment as described by the
Caldeira-Leggett equation. Anglin and Zurek predicted that a resistive surface
could act as such a dissipative environment for a free electron wave passing
close to it. We scrutinize Zurek's and other promising decoherence theoretical
models b... | 2111.05246v1 |
2022-06-10 | Fabrication of uniformly doped graphene quantum Hall arrays with multiple quantized resistance outputs | In this work, limiting factors for developing metrologically useful arrays
from epitaxial graphene on SiC are lifted with a combination of
centimeter-scale, high-quality material growth and the implementation of
superconducting contacts. Standard devices for metrology have been restricted
to having a single quantized v... | 2206.05098v1 |
2022-06-29 | On the depletion behaviour of low-temperature covalently bonded silicon sensor diodes | Low temperature covalent direct wafer-wafer bonding allows for the fusion of
multiple semiconductor wafers without any additional material at the bonding
interface. In the context of particle pixel detectors this might provide an
alternative to bump-bonding for joining sensors to readout chips. Previous
investigations ... | 2206.14717v2 |
2022-07-26 | Engineering Surface Oxygen Vacancies in $\mathrm{SrTiO_3}$ to Form a High Mobility and Transparent Quasi Two dimensional Electron System | Quasi-two-dimensional electron systems (q-2DES) are formed in various
hetero-structures, including oxide interfaces. Oxygen vacancies (OVs) in oxides
like $\mathrm{SrTiO_3}$ are known to produce electronic carriers. A novel way
to produce $\mathrm{SrTiO_{3-\delta}}$ on the surface using a low-energy
$\mathrm{H_2}$ plas... | 2207.12933v1 |
2022-09-05 | Growth of rare-earth monopnictide DySb single crystal by novel Self-flux method | This report presents a new synthesis protocol for the single crystal growth
of rare earth monopnictide DySb by self-flux technique. A detailed structural,
transport and magnetic characterization have been done using X-Ray diffraction
(XRD), High resolution X-Ray diffraction (HRXRD), resistivity and magnetization
measur... | 2209.01930v1 |
2022-10-27 | Single photon detection performance of highly disordered NbTiN thin films | We experimentally investigated the detection performance of highly disordered
NbxTi1-xN based superconducting nanowire single photon detectors (SNSPDs). The
dependence on the composition of the transition temperature Tc for NbxTi1-xN
films show a dome-like behavior on the Nb content, with a maximal Tc at
xNb~0.65 , and... | 2210.15215v1 |
2022-11-24 | Development of Hybrid Resistive Plate Chambers | Resistive Plate Chambers (RPCs) are essential active media of large-scale
experiments as part of the muon systems and (semi-)digital hadron calorimeters.
Among the several outstanding issues associated with the RPCs, the loss of
efficiency for the detection of particles when subjected to high particle
fluxes, and the l... | 2211.13796v2 |
2023-09-11 | Experimental realization of a high Curie temperature CoFeRuSn quaternary Heusler alloy for spintronic applications | We synthesize CoFeRuSn equiatomic quaternary Heusler alloy using arc-melt
technique and investigate its structural, magnetic and transport properties.
The room temperature powder X-ray diffraction analysis reveals that CoFeRuSn
crystallizes in cubic crystal structure with small amount of DO3 - disorder.
The field depen... | 2309.05493v1 |
2018-04-11 | Extremely large magnetoresistance in topologically trivial semimetal $α$-WP$_2$ | Extremely large magnetoresistance (XMR) was recently discovered in many
non-magnetic materials, while its underlying mechanism remains poorly
understood due to the complex electronic structure of these materials. Here, we
report an investigation of the $\alpha$-phase WP$_2$, a topologically trivial
semimetal with monoc... | 1804.03879v1 |
2019-05-02 | Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator | The intricate interplay between nontrivial topology and magnetism in
two-dimensional (2D) materials has led to the emergence of many novel phenomena
and functionalities. An outstanding example is the quantum anomalous Hall (QAH)
effect, which was realized in magnetically doped topological insulators (TIs)
in the absenc... | 1905.00715v2 |
2019-04-24 | Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures | Van der Waals (vdW) ferromagnetic materials are rapidly establishing
themselves as effective building blocks for next generation spintronic devices.
When layered with non-magnetic vdW materials, such as graphene and/or
topological insulators, vdW heterostructures can be assembled (with no
requirement for lattice matchi... | 1904.10588v2 |
2007-03-09 | Nanometer-Scale Materials Contrast Imaging with a Near-Field Microwave Microscope | We report topography-free materials contrast imaging on a nano-fabricated
Boron-doped Silicon sample measured with a Near-field Scanning Microwave
Microscope over a broad frequency range. The Boron doping was performed using
the Focus Ion Beam technique on a Silicon wafer with nominal resistivity of 61
Ohm.cm. A topogr... | 0703241v1 |
2010-03-15 | A Memadmittance Systems Model for Thin Film Memory Materials | In 1971 the memristor was originally postulated as a new non-linear circuit
element relating the time integrals of current and voltage. More recently
researchers at HPLabs have linked the theoretical memristor concept to
resistance switching behavior of TiO(2-x) thin films. However, a variety of
other thin film materia... | 1003.2842v1 |
2018-09-06 | Estimation of the electrical and thermal contact resistances and thermoemf of thermoelectric material-metal transient contact layer due to semiconductor surface rougness | The impact of semiconductor surface roughness on the electrical and thermal
contact resistances and thermoEMF of thermoelectric material (TEM)-metal
transient contact layer is studied theoretically. The distribution of hollows
and humps on the rough surface is simulated by the truncated Gaussian
distribution. The impac... | 1809.02504v1 |
2022-03-30 | STeP-CiM: Strain-enabled Ternary Precision Computation-in-Memory based on Non-Volatile 2D Piezoelectric Transistors | We propose 2D Piezoelectric FET (PeFET) based compute-enabled non-volatile
memory for ternary deep neural networks (DNNs). PeFETs consist of a material
with ferroelectric and piezoelectric properties coupled with Transition Metal
Dichalcogenide channel. We utilize (a) ferroelectricity to store binary bits
(0/1) in the ... | 2203.16416v1 |
2013-01-28 | Can high risk fungicides be used in mixtures without selecting for fungicide resistance? | Fungicide mixtures produced by the agrochemical industry often contain
low-risk fungicides, to which fungal pathogens are fully sensitive, together
with high-risk fungicides known to be prone to fungicide resistance. Can these
mixtures provide adequate disease control while minimizing the risk for the
development of re... | 1301.6561v2 |
2005-12-15 | Introduction to tensorial resistivity probability tomography | The probability tomography approach developed for the scalar resistivity
method is here extended to the 2D tensorial apparent resistivity acquisition
mode. The rotational invariant derived from the trace of the apparent
resistivity tensor is considered, since it gives on the datum plane anomalies
confined above the bur... | 0512147v1 |
2014-07-24 | Macro- and microscopic properties of strontium doped indium oxide | Solid state synthesis and physical mechanisms of electrical conductivity
variation in polycrystalline, strontium doped indium oxide In2O3:(SrO)x were
investigated for materials with different doping levels at different
temperatures (T=20-300 C) and ambient atmosphere content including humidity and
low pressure. Gas sen... | 1407.6471v1 |
2015-03-29 | Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides | Low carrier mobility and high electrical contact resistance are two major
obstacles prohibiting explorations of quantum transport in TMDCs. Here, we
demonstrate an effective method to establish low-temperature Ohmic contacts in
boron nitride encapsulated TMDC devices based on selective etching and
conventional electron... | 1503.08427v2 |
2017-04-13 | High-pressure phase diagram, structural transitions, and persistent non-metallicity of BaBiO$_3$: theory and experiment | BaBiO$_3$ is a mixed-valence perovskite which escapes the metallic state
through a Bi valence (and Bi-O bond) disproportionation or CDW distortion,
resulting in a semiconductor with a gap of 0.8 eV at zero pressure. The
evolution of structural and electronic properties at high pressure is, however,
largely unknown. Pre... | 1704.04098v1 |
2019-11-18 | Effect of particle contact on the electrical performance of NTC-epoxy composite thermistors | As demand rises for flexible electronics, traditionally prepared sintered
ceramic sensors must be transformed into fully new sensor materials that can
bend and flex in use and integration. Negative temperature coefficient of
resistance (NTC) ceramic thermistors are preferred temperature sensors for
their high accuracy ... | 1911.07468v2 |
2021-03-11 | Review on quasi-2D square planar nickelates | In strongly correlated materials, lattice, charge, spin and orbital degrees
of freedom interact with each other, leading to emergent physical properties
such as superconductivity, colossal magnetic resistance and metal-insulator
transition. Quasi-2D square planar nickelates, Rn+1NinO2n+2 (R=rare earth, n=2,
3...), are ... | 2103.06674v1 |
2022-05-25 | Stranger than Metals | Although the resistivity in traditional metals increases with temperature,
its $T$ dependence vanishes at low or high temperature, albeit for different
reasons. Here, we review a class of materials, known as \lq strange' metals,
that can violate both principles. In materials exhibiting such behavior, the
change in slop... | 2205.12979v1 |
2024-03-08 | Experimental set-up for thermal measurements at the nanoscale using an SThM probe with niobium nitride thermometer | Scanning Thermal Microscopy (SThM) has become an important measurement tool
for characterizing the thermal properties of materials at the nanometer scale.
This technique requires a SThM probe that combines an Atomic Force Microscopy
(AFM) probe and a very sensitive resistive thermometry; the thermometer being
located a... | 2403.05405v2 |
2015-12-17 | A Novel Material for In Situ Construction on Mars: Experiments and Numerical Simulations | A significant step in space exploration during the 21st century will be human
settlement on Mars. Instead of transporting all the construction materials from
Earth to the red planet with incredibly high cost, using Martian soil to
construct a site on Mars is a superior choice. Knowing that Mars has long been
considered... | 1512.05461v3 |
1998-09-07 | Metallic temperature dependence of resistivity in perchlorate doped polyacetylene | We have measured the electrical resistivity ($\rho$) and the thermoelectric
power (TEP) of the perchlorate (ClO4^-) doped stretch oriented polyacetylene
(PA) film. For the highly conducting samples ($\sigma_{RT} > 41000 S/cm$), the
temperature dependence of the 4-probe resistivity shows positive temperature
coefficient... | 9809106v1 |
2006-11-20 | Using Cluster Dynamics to Model Electrical Resistivity Measurements in Precipitating Al-Sc Alloys | Electrical resistivity evolution during precipitation in Al-Sc alloys is
modeled using cluster dynamics. This mesoscopic modeling has already been shown
to correctly predict the time evolution of the precipitate size distribution.
In this work, we show that it leads too to resistivity predictions in
quantitative agreem... | 0611524v1 |
2008-10-06 | Strong resistance nonlinearity and third harmonic generation in the unipolar resistance switching of NiO thin films | We investigated third harmonic generation in NiO thin films, which exhibit
unipolar resistance switching behavior. We found that the low resistance states
of the films were strongly nonlinear, with variations in the resistance R as
large as 60%. This strong nonlinear behavior was most likely caused by Joule
heating of ... | 0810.0886v1 |
2009-07-19 | Current Driven tri-stable Resistance States in Magnetic Point Contacts | Point contacts between normal and ferromagnetic metals are investigated using
magneto-resistance and transport spectroscopy measurements combined with
micromagnetic simulations. Pronounced hysteresis in the point-contact
resistance versus both bias current and external magnetic field are observed.
It is found that such... | 0907.3286v1 |
2014-03-25 | Electric-Field-Modulated Nonvolatile Resistance Switching in VO2/PMN-PT(111) Heterostructures | The electric-field-modulated resistance switching in VO2 thin films grown on
piezoelectric (111)-0.68Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 (PMN-PT) substrates has
been investigated. Large relative change in resistance (10.7%) was observed in
VO2/PMN-PT(111) hererostructures at room temperature. For a substrate with a
given polar... | 1403.6388v2 |
2015-02-23 | Phonon residual resistance of pure crystals | Using the Boltzmann transport equation, we study phonon residual resistance
of perfect metallic crystals of a finite thickness $d$ along which a weak
constant electric field $E$ is applied. This resistance which is $\propto
d^{-5}E^{-3}$, is due to scattering of electric field-heated electrons with
emission of long-wav... | 1502.06486v2 |
2016-02-25 | Electric fields, weighting fields, signals and charge diffusion in detectors including resistive materials | In this report we discuss static and time dependent electric fields in
detector geometries with an arbitrary number of parallel layers of a given
permittivity and weak conductivity. We derive the Green's functions i.e. the
field of a point charge, as well as the weighting fields for readout pads and
readout strips in t... | 1602.07949v1 |
2016-02-26 | Investigating the Temperature Effects on Resistive Random Access Memory (RRAM) Devices | In this paper, we report the effect of filament radius and filament
resistivity on the saturated temperature of ZnO, TiO2, WO3 and HfO2 Resistive
Random Access Memory (RRAM) devices. We resort to the thermal reaction model of
RRAM for the present analysis. The results substantiate decrease in saturated
temperature with... | 1602.08262v1 |
2017-11-02 | Resistivity scaling model for metals with conduction band anisotropy | It is generally understood that the resistivity of metal thin films scales
with film thickness mainly due to grain boundary and boundary surface
scattering. Recently, several experiments and ab initio simulations have
demonstrated the impact of crystal orientation on resistivity scaling. The
crystal orientation cannot ... | 1711.00796v3 |
2021-02-05 | Does Non-Genetic Heterogeneity Facilitate the Development of Genetic Drug Resistance? | Non-genetic forms of antimicrobial drug resistance can result from
cell-to-cell variability that is not encoded in the genetic material. Data from
recent studies also suggest that non-genetic mechanisms can facilitate the
development of genetic drug resistance. In this Perspective article, we
speculate on how the inter... | 2102.03276v1 |
2023-04-10 | T-square dependence of the electronic thermal resistivity in metallic strontium titanate | The temperature dependence of the phase space for electron-electron (e-e)
collisions leads to a T-square contribution to electrical resistivity of
metals. Umklapp scattering are identified as the origin of momentum loss due to
e-e scattering in dense metals. However, in dilute metals like lightly doped
strontium titana... | 2304.04841v2 |
2001-07-03 | Low temperature resistance minimum in non-superconducting 3R-Nb_{1+x}S_2 and 3R-Ga_xNbS_2 | We report the structural and electron transport properties of 3R-Nb_{1+x}S_2
(x >= .07) and 3R-Ga_xNbS_2 (.1 <= x <= .33) prepared as polycrystalline
pellets as well as single crystals grown by vapour transport. We observe a
resistance minimum in these compounds between 20-60 K, with the T_min
proportional to x. The re... | 0107067v1 |
2006-08-11 | Fracture resistance via topology optimisation | The fracture resistance of structures is optimised using the level-set
method. Fracture resistance is assumed to be related to the elastic energy
released by a crack propagating in a normal direction from parts of the
boundary which are in tension, and is calculated using the virtual crack
extension technique. The shap... | 0608260v1 |
2016-05-19 | Resistive Switching Phenomena of HfO2 Films Grown by MOCVD for Resistive Switching Memory Devices | The resistive switching phenomena of HfO2 films grown by metalorganic
chemical vapor deposition was studied for the application of ReRAM devices. In
the fabricated Pt/HfO2/TiN memory cells, the bipolar resistive switching
characteristics were observed, and the set and reset states were measured to be
as low as 7 uA and... | 1605.06014v1 |
2020-02-10 | Resistivity minimum in diluted metallic magnets | Resistivity minima are commonly seen in itinerant magnets and they are often
attributed to the Kondo effect. However, recent experiments are revealing an
increasing number of materials showing resistivity minima in the absence of
indications of Kondo singlet formation. In a previous work [Z. Wang, K. Barros,
G.-W. Cher... | 2002.03858v2 |
2021-10-06 | Pinpointing the Dominant Component of Contact Resistance to Atomically Thin Semiconductors | Achieving good electrical contacts is one of the major challenges in
realizing devices based on atomically thin two-dimensional (2D) semiconductors.
Several studies have examined this hurdle, but a universal understanding of the
contact resistance and an underlying approach to its reduction are currently
lacking. In th... | 2110.02563v1 |
2023-11-14 | Giant Resistance Switch in Twisted Transition Metal Dichalcogenide Tunnel Junctions | Resistance switching in multilayer structures are typically based on
materials possessing ferroic orders. Here we predict an extremely large
resistance switching based on the relative spin-orbit splitting in twisted
transition metal dichalcogenide (TMD) monolayers tunnel junctions. Because of
the valence band spin spli... | 2311.08397v1 |
2000-10-24 | Slater Transition in the Pyrochlore Cd2Os2O7 | Cd2Os2O7 crystallizes in the pyrochlore structure and undergoes a
metal-insulator transition (MIT) near 226 K. We have characterized the MIT in
Cd2Os2O7 using X-ray diffraction, resistivity at ambient and high pressure,
specific heat, magnetization, thermopower, Hall coefficient, and thermal
conductivity. Both single c... | 0010364v1 |
2004-12-17 | Origin of Colossal Dielectric Response of Pr(0.6)Ca(0.4)MnO(3) | We report the detailed study of dielectric response of Pr(0.6)Ca(0.4)MnO(3)
(PCMO), member of manganite family showing colossal magnetoresistance.
Measurements have been performed on four polycrystalline samples and four
single crystals, allowing us to compare and extract the essence of dielectric
response in the mater... | 0412473v3 |
2012-05-14 | Bi2Te1.6S1.4 - a Topological Insulator in the Tetradymite Family | We describe the crystal growth, crystal structure, and basic electrical
properties of Bi2Te1.6S1.4, which incorporates both S and Te in its Tetradymite
quintuple layers in the motif -[Te0.8S0.2]-Bi-S-Bi-[Te0.8S0.2]-. This material
differs from other Tetradymites studied as topological insulators due to the
increased io... | 1205.2924v1 |
2015-05-26 | Transport, Magnetic and Vibrational Properties of Chemically Exfoliated Few Layer Graphene | We study the vibrational, magnetic and transport properties of Few Layer
Graphene (FLG) using Raman and electron spin resonance spectroscopy and
microwave conductivity measurements. FLG samples were produced using wet
chemical exfoliation with different post-processing, namely ultrasound
treatment, shear mixing, and ma... | 1505.06857v1 |
2017-02-10 | Highly wear-resistant and low-friction Si3N4 composites by addition of graphene nanoplatelets approaching the 2D limit | Graphene nanoplatelets (GNPs) have emerged as one of the most promising
filler materials for improving the tribological performance of ceramic
composites due to their outstanding solid lubricant properties as well as
mechanical and thermal stability. Yet, the addition of GNPs has so far provided
only a very limited imp... | 1702.03153v1 |
2017-12-16 | Stress-dependent electrical transport and its universal scaling in granular materials | We experimentally and numerically examine stress-dependent electrical
transport in granular materials to elucidate the origins of their universal
dielectric response. The ac responses of granular systems under varied
compressive loadings consistently exhibit a transition from a resistive plateau
at low frequencies to a... | 1712.05938v2 |
2020-04-06 | Spin Hall magnetoresistance in antiferromagnetic insulators | Antiferromagnetic materials promise improved performance for spintronic
applications, as they are robust against external magnetic field perturbations
and allow for faster magnetization dynamics compared to ferromagnets. The
direct observation of the antiferromagnetic state, however, is challenging due
to the absence o... | 2004.02639v2 |
2017-04-11 | Transfer of Vertical Graphene Nanosheets onto Flexible Substrates towards Supercapacitor Application | Vertical graphene nanosheets (VGNs) are the material of choice for
next-generation electronic device applications. The growing demand for flexible
devices in electronic industry brings in restriction on growth temperature of
the material of interest. However, VGNs with better structural quality is
usually achieved at h... | 1704.03227v1 |
2019-03-26 | Isostructural Mott Transition in 2D honeycomb antiferromagnet V$_{0.9}$PS$_3$ | We present the observation of an isostructural Mott insulator-metal
transition in van-der-Waals honeycomb antiferromagnet V$_{0.9}$PS$_3$ through
high-pressure x-ray diffraction and transport measurements. The MPX$_3$ family
of magnetic van-der-Waals materials (M denotes a first row transition metal and
X either S or S... | 1903.10971v1 |
2019-03-29 | Substrate Mediated Synthesis of Ti-Si-N Nano-and-Micro Structures for Optoelectronic Applications | Being one of the strongest materials, ternary TiSiN exhibits a very
interesting family of binary transition metal nitride and silicide systems. A
novel technique to fabricate morphologically fascinating nano and micro
structures of TiSiN is reported here. The referred TiSiN films, majorly
constituted with cubic TiN pha... | 1903.12376v1 |
2020-01-06 | Controlled introduction of defects to delafossite metals by electron irradiation | The delafossite metals PdCoO$_{2}$, PtCoO$_{2}$ and PdCrO$_{2}$ are among the
highest conductivity materials known, with low temperature mean free paths of
tens of microns in the best as-grown single crystals. A key question is whether
these very low resistive scattering rates result from strongly suppressed
backscatte... | 2001.01471v1 |
2020-01-17 | Wettability and surface energy of parylene F | Parylenes are barrier materials employed as protective layers. However, many
parylenes are unsuitable for applications under harsh conditions. A new
material, parylene F, demonstrates considerable potential for a wide range of
applications due to its high temperature and UV resistance. For the first time,
the wettabili... | 2001.06146v2 |
2020-01-24 | Adaptive hard and tough mechanical response in single-crystal B1 VNx ceramics via control of anion vacancies | High hardness and toughness are generally considered mutually exclusive
properties for single-crystal ceramics. Combining experiments and ab initio
molecular dynamics (AIMD) atomistic simulations at room temperature, we
demonstrate that both the hardness and toughness of single-crystal
NaCl-structure VNx/MgO(001) thin ... | 2001.08933v2 |
2020-05-14 | Gate- and Light-Tunable Negative Differential Resistance with High Peak Current Density in 1T-TaS$_2$/2H-MoS$_2$ T-Junction | Metal-based electronics is attractive for fast and radiation-hard electronic
circuits and remains one of the longstanding goals for researchers. The
emergence of 1T-TaS$_2$, a layered material exhibiting strong charge density
wave (CDW) driven resistivity switching that can be controlled by an external
stimulus such as... | 2005.07146v2 |
2021-05-23 | Substrate-Versatile Direct-Write Printing of Carbon Nanotube-Based Flexible Conductors, Circuits, and Sensors | Printed electronics rely on the deposition of conductive liquid inks,
typically onto polymeric or paper substrates. Among available conductive
fillers for use in electronic inks, carbon nanotubes (CNTs) have high
conductivity, low density, processability at low temperatures, and intrinsic
mechanical flexibility. Howeve... | 2105.10942v1 |
2021-10-05 | Nanoscale devices with superconducting electrodes to locally channel current in 3D Weyl semimetals | We report on the fabrication of nano-devices on the \hkl[-1 0 1] surface of a
Weyl semimetal, a macroscopic crystal of TaAs, and low-temperature transport
measurements. We can implement electron beam lithography by peeling off and
transferring the resist for nanofabrication onto the irregular crystal. We
fabricate the ... | 2110.01793v1 |
2021-11-29 | Doped graphene/carbon black hybrid catalyst giving enhanced oxygen reduction reaction activity with high resistance to corrosion in proton exchange membrane fuel cells | Nitrogen doping of the carbon is an important method to improve the
performance and durability of catalysts for proton exchange membrane fuel cells
by platinum-nitrogen and carbon-nitrogen bonds. This study shows that p-phenyl
groups and graphitic N acting bridges linking platinum and the graphene/carbon
black (the rat... | 2111.14648v1 |
2022-03-22 | Traps and transport resistance: the next frontier for stable state-of-the-art non-fullerene acceptor solar cells | Stability is one of the most important challenges facing organic solar cells
(OSC) on their path to commercialization. In the high-performance material
system PM6:Y6 studied here, investigate degradation mechanisms of inverted
photovoltaic devices. We have identified two distinct degradation pathways: one
requires pres... | 2203.11905v1 |
2022-07-05 | Phonons behave like Electrons in the Thermal Hall Effect of the Cuprates | The thermal Hall effect, which arises when heat flows transverse to an
applied thermal gradient, has become an important observable in the study of
quantum materials. Recent experiments found a large thermal Hall conductivity
$\kappa_{xy}$ in many high-temperature cuprate superconductors, including deep
inside the Mott... | 2207.02240v3 |
2022-08-28 | Multiferroic Ti$_3$C$_2$T$_x$ MXene with Tunable Ferroelectric-controlled High Performance Resistive Memory Devices | Multiferroic (MF) devices based on simultaneous ferroelectric and
ferromagnetic phenomena are considered to be promising candidates for future
bi-functional micro/nano-electronics. The multiferroic phenomena in
two-dimensional materials is rarely reported in literature. We reported a
simple approach to reveal frequency... | 2208.13128v1 |
2023-08-05 | Graphene-based RRAM devices for neural computing | Resistive random access memory (RRAM) is very well known for its potential
application in in-memory and neural computing. However, they often have
different types of device-to-device and cycle-to-cycle variability. This makes
it harder to build highly accurate crossbar arrays.Traditional RRAM designs
make use of variou... | 2308.02767v1 |
2023-08-06 | Mechanically exfoliated low-layered [Ca$_2$CoO$_3$]$_{0.62}$[CoO$_2$]: A single-crystalline p-type transparent conducting oxide | Transparent conducting oxides (TCOs) are essential components of
optoelectronic devices and various materials have been explored for highly
efficient TCOs having a combination of high transmittance and low sheet
resistance. Here, we focus on a misfit thermoelectric oxide
[Ca$_2$CoO$_3$]$_{0.62}$[CoO$_2$] and fabricate ... | 2308.03221v1 |
2023-09-06 | Robust Sandwiched B/TM/B Structures by Metal Intercalating into Bilayer Borophene Leading to Excellent Hydrogen Evolution Reaction | Bilayer borophene, very recently synthesized on Ag and Cu, possesses
extremely flat large surface and excellent conductivity. Besides, the van der
Waals gap of bilayer borophene can be intercalated by metal atoms, thereby
tailoring the properties of bilayer borophene. Herein, we propose that
sandwiched B/TM/B (TM=Co, N... | 2309.02963v1 |
2023-11-22 | Rashba-splitting-induced topological flat band detected by anomalous resistance oscillations beyond the quantum limit in ZrTe$_5$ | Topological flat band, on which the kinetic energy of topological electrons
is quenched, represents a platform for investigating the topological properties
of correlated systems. Recent experimental studies on flattened electronic
bands have mainly concentrated on 2-dimensional materials created by van der
Waals hetero... | 2311.13346v2 |
2024-04-19 | Machine Learning-guided accelerated discovery of structure-property correlations in lean magnesium alloys for biomedical applications | Magnesium alloys are emerging as promising alternatives to traditional
orthopedic implant materials thanks to their biodegradability,
biocompatibility, and impressive mechanical characteristics. However, their
rapid in-vivo degradation presents challenges, notably in upholding mechanical
integrity over time. This study... | 2404.13022v1 |
2010-02-08 | Processing and Characterization of Multiferroic Bi-relaxors | We compare chemical solution deposition (CSD), and pulsed-laser-deposition
(PLD), specimens of the new room-temperature, single-phase, multiferroic
magnetoelectric, [PbFe2/3W1/3O3]x[PbZr0.53Ti0.47O3]1-x (PZTFWx ~ 0.40<x<0.20)
with polarization, loss (<1%), and resistivity (typically 108 ohm.cm) equal to
or superior to ... | 1002.1637v1 |
2012-08-20 | Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition | Topological insulator (TI) materials such as Bi2Te3 and Bi2Se3 have attracted
strong recent interests. Large scale, high quality TI thin films are important
for developing TI-based device applications. In this work, structural and
electronic properties of Bi2Te3 thin films deposited by metal organic chemical
vapor depo... | 1208.4071v1 |
2017-10-03 | Large thermoelectric figure of merit in graphene layered devices at low temperature | Nanostructured materials have emerged as an alternative to enhance the figure
of merit (ZT) of thermoelectric (TE) devices. Graphene exhibits a high
electrical conductivity (in-plane) that is necessary for a high ZT; however,
this effect is countered by its impressive thermal conductivity. In this work
TE layered devic... | 1710.01152v1 |
2014-08-07 | A broadband silicon quarter-wave retarder for far-infrared spectroscopic circular dichroism | The high brightness, broad spectral coverage and pulsed characteristics of
infrared synchrotron radiation enable time-resolved spectroscopy under
throughput-limited optical systems, as can occur with the high-field magnet
cryostat systems used to study electron dynamics and cyclotron resonance by
far-infrared technique... | 1408.1650v1 |
2018-09-05 | Improving the performance of Ge$_2$Sb$_2$Te$_5$ materials via nickel doping: Towards RF-compatible phase-change devices | High-speed electrical switching of Ge2Sb2Te5 (GST) remains a challenging task
due to the large impedance mismatch between the low-conductivity amorphous
state and the high-conductivity crystalline state. In this letter, we
demonstrate an effective doping scheme using nickel to reduce the resistivity
contrast between th... | 1810.01964v1 |
2012-01-04 | Graphene -- Based Nanocomposites as Highly Efficient Thermal Interface Materials | We found that an optimized mixture of graphene and multilayer graphene -
produced by the high-yield inexpensive liquid-phase-exfoliation technique - can
lead to an extremely strong enhancement of the cross-plane thermal conductivity
K of the composite. The "laser flash" measurements revealed a record-high
enhancement o... | 1201.0796v1 |
2016-03-07 | High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors | Silicon and Germanium monopnictides SiP, SiAs, GeP and GeAs form a family of
2D layered semiconductors. We have succeeded in growing bulk single crystals of
these compounds by melt-growth under high pressure (0.5-1 GPa) in a cubic anvil
hot press. Large (mm-size), shiny, micaceous crystals of GeP, GeAs and SiAs
were ob... | 1603.02134v1 |
2017-05-01 | High pressure floating-zone growth of perovskite nickelate LaNiO3 single crystals | We report the first single crystal growth of the correlated metal LaNiO3
using a high-pressure optical-image floating zone furnace. The crystals were
studied using single crystal/powder x-ray diffraction, resistivity, specific
heat, and magnetic susceptibility. The availability of bulk LaNiO3 crystals
will (i) promote ... | 1705.00570v1 |
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