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2012-06-11
Thermal Stability of Thermoelectric Materials via In Situ Resistivity Measurements
An experimental setup for determining the electrical resistivity of several types of thermoelectric materials over the temperature range 20 < T < 550 C is described in detail. One resistivity measurement during temperature cycling is also explained for Cu0.01Bi2Te2.7Se0.3 while a second measurement is made on Yb0.35Co4...
1206.2094v1
2022-07-27
Terahertz microresonators for material characterisation
Terahertz (THz) technology is rapidly evolving, and the advancement of data and information processing devices is essential. Silicon THz microresonators provide perfect platforms to develop compact and integrated devices that could transform THz technology. Here we present a systematic study on the key figure of merit ...
2207.13818v1
2023-03-24
Charge-density-wave resistive switching and voltage oscillations in ternary chalcogenide BaTiS3
Phase change materials, which show different electrical characteristics across the phase transitions, have attracted considerable research attention for their potential electronic device applications. Materials with metal-to-insulator or charge density wave (CDW) transitions such as VO2 and 1T-TaS2 have demonstrated vo...
2303.14169v1
2016-02-24
Design and optimization of resistive anode for a two-dimensional imaging triple-GEM detector
The optimization of resistive anode for two dimensional imaging detectors which consists of a series of high resistive square pads surrounding by low resistive strips has been studied by both numerical simulations and experimental tests. It has been found that to obtain good detector performance, the resistance ratio o...
1602.07438v1
2017-09-19
Considering non-uniform current distributions in magnetoresistive sensor designs and their implications for the resistance transfer function
Non-uniform current distributions of spin valves with disk shaped free layers are investigated. In the context of spin valves, the vortex state, which is the ground-state in many disk shaped magnetic bodies, allows for distinct parallel channels of high and low resistivity. The readout current is thus able to evade hig...
1709.06394v1
2023-09-19
Effects of plasma resistivity in three-dimensional full-F gyro-fluid turbulence simulations
A full-F, isothermal, electromagnetic, gyro-fluid model is used to simulate plasma turbulence in a COMPASS-sized, diverted tokamak. A parameter scan covering three orders of magnitude of plasma resistivity and two values for the ion to electron temperature ratio with otherwise fixed parameters is setup and analysed. Si...
2309.10414v1
2016-11-09
TiO$_2$-based Memristors and ReRAM: Materials, Mechanisms and Models (a Review)
The memristor is the fundamental non-linear circuit element, with uses in computing and computer memory. ReRAM (Resistive Random Access Memory) is a resistive switching memory proposed as a non-volatile memory. In this review we shall summarise the state of the art for these closely-related fields, concentrating on tit...
1611.04456v1
2018-10-30
An alternative to the topological interpretation of the transverse resistivity anomalies in SrRuO3
We clarify the physical origin of anomalies in transverse resistivity often observed in exotic materials, such as SrRuO3, in which the Berry curvature is manifested in the transport properties. The previously attributed mechanism for the anomalies, the topological Hall effect (THE), is refuted by our thorough investiga...
1810.12529v1
2004-11-26
The Acceleration Mechanism of Resistive MHD Jets Launched from Accretion Disks
We analyzed the results of non-linear resistive magnetohydrodynamical (MHD) simulations of jet formation to study the acceleration mechanism of axisymmetric, resistive MHD jets. The initial state is a constant angular momentum, polytropic torus threaded by weak uniform vertical magnetic fields. The time evolution of th...
0411712v1
2016-10-30
Temperature and Humidity Dependence of Resistance in Nano-Diamond Powder
The electrical resistance of detonation nano-diamond powders was measured from liquid nitrogen temperature to room temperature and in relative humidity environments from around 10% to 100%. After sample exposures of several hours at 100% relative humidity at room temperature (around 295 K), when the temperature was red...
1611.02242v2
2018-07-04
Gate controlled large resistance switching driven by charge density wave in 1T-TaS2/2H-MoS2 heterojunction
1T-TaS2 is a layered material that exhibits charge density wave (CDW) induced distinct electrical resistivity phases and has attracted a lot of attention for interesting device applications. However, such resistivity switching effects are often weak, and cannot be modulated by an external gate voltage - limiting their ...
1807.01652v2
2008-10-08
Performance Analysis of 60nm gate length III-V InGaAs HEMTs: Simulations vs. experiments
An analysis of recent experimental data for high-performance In0.7Ga0.3As high electron mobility transistors (HEMTs) is presented. Using a fully quantum mechanical, ballistic model, we simulate In0.7Ga0.3As HEMTs with gate lengths of LG = 60nm, 85, and 135 nm and compare the result to the measured I-V characteristics i...
0810.1540v1
2008-12-26
Flux quanta driven by high-density currents in low-impurity V3Si and LuNi2B2C: free flux flow and flux-core size effect
High density direct currents (DC) are used to drive flux quanta via the Lorentz force towards a highly ordered "free flux flow" (FFF) dynamic state, made possible by the weak-pinning environment of high-quality, single-crystal samples of two low-Tc superconducting compounds, V3Si and LuNi2B2C. We report the effect of t...
0812.4715v4
2020-06-01
Radiation hardness of GaAs: Cr and Si sensors irradiated by electron beam
The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical materials. High radiation hardness at room temperature stands out and needs to be syst...
2006.01254v1
2021-02-04
Quantum Transport in Two-Dimensional WS$_2$ with High-Efficiency Carrier Injection Through Indium Alloy Contacts
Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semiconductor interface. However, high contact resistances have hindered progress. Quantum transport studies are scant as low-quality contacts are i...
2102.02489v1
2021-08-11
Single-domain perpendicular magnetization induced by the coherent O 2p-Ru 4d hybridized state in an ultra-high-quality SrRuO3 film
We investigated the Ru 4d and O 2p electronic structure and magnetic properties of an ultra-high-quality SrRuO3 film on SrTiO3 grown by machine-learning-assisted molecular beam epitaxy. The high itinerancy and long quantum lifetimes of the quasiparticles in the Ru 4d t2g-O 2p hybridized valence band are confirmed by ob...
2108.04980v1
2009-08-03
Resistivity of Mn$_{1-x}$Fe$_x$Si single crystals: Evidence for quantum critical behavior
Resistivity measurements have been made on Mn$_{1-x}$Fe$_x$Si single crystals between 2 and 300K for $x$ = 0, 0.05, 0.08, 0.12 and 0.15. Fe doping is found to depress the magnetic ordering temperature from 30K for $x$ = 0 to below 2K for $x$ = 0.15. Although Fe doping results in a large increase of the low-temperature ...
0908.0294v1
2012-10-09
Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors
We study the contact resistance and the transfer characteristics of back-gated field effect transistors of mono- and bi-layer graphene. We measure specific contact resistivity of ~7kohm*um2 and ~30kohm*um2 for Ni and Ti, respectively. We show that the contact resistance is a significant contributor to the total source-...
1210.2531v1
2013-07-01
Magnetic and transport parameters of LSMO and YBCO/LSMO films deposited on sapphire substrates
The La0.7Sr0.3MnO3 (LSMO) layers and YBa2Cu3O7-{\delta}/La0.7Sr0.3MnO3 (YBCO/LSMO) bilayers were grown by magnetron sputtering on sapphire (Al2O3 or ALO) substrates. Temperature dependences of resistance of single LSMO films, grown on ALO substrates were typical for polycrystalline manganite materials and the resistanc...
1307.0302v1
2015-01-27
Realization of a reversible switching in TaO2 polymorphs via Peierls distortion for resistance random access memory
Transition-metal-oxide based resistance random access memory is a promising candidate for next-generation universal non-volatile memories. Searching and designing appropriate new materials used in the memories becomes an urgent task. Here, a new structure with the TaO2 formula was predicted using evolutionary algorithm...
1501.06632v1
2015-02-09
Four-Probe Methods for Measuring the Resistivity of Samples in the Form of Rectangular Parallelepipeds
The problem of measuring the resistivity of isotropic samples of finite dimensions in the form of rectangular parallelepipeds using the four-probe technique was considered. Two variants of contact arrangements were studied: (1) four collinear probes are positioned on one side of a sample symmetrically with respect to t...
1502.02600v1
2019-12-10
Resistance Drift in Ge2Sb2Te5 Phase Change Memory Line Cells at Low Temperatures and Its Response to Photoexcitation
Resistance drift in phase change materials is characterized in amorphous phase change memory line-cells from 300 K to 125 K range and is observed to follow the previously reported power-law behavior with drift coefficients in the 0.07 to 0.11 range in dark. While these drift coefficients measured in dark are similar to...
1912.04480v2
2022-04-04
Inter- to Intra-Layer Resistivity Anisotropy of NdFeAs(O,H) with Various Hydrogen Concentrations
With molecular beam epitaxy and topotactic chemical reaction, we prepared NdFeAs(O,H) epitaxial thin films with various hydrogen concentrations on 5{\deg} vicinal cut MgO substrates. By measuring the resistivities along the longitudinal and transversal directions, the ab plane and the c axis resistivities (\{rho}_ab an...
2204.01554v1
2020-04-28
A Route to High-Toughness Battery Electrodes
There is increasing interest in materials that combine energy-storing functions with augmented mechanical properties, ranging from flexibility in bending to stretchability to structural properties. In the case of lithium-ion batteries, these mechanical functions could enable their integration in emerging technologies s...
2004.13350v1
2023-02-02
High-entropy silicide superconductors with W$_{5}$Si$_{3}$-type structure
We report the synthesis, crystal structure and physical properties of two new high-entropy silicides (HESs), namely (Nb$_{0.1}$Mo$_{0.3}$W$_{0.3}$Re$_{0.2}$Ru$_{0.1}$)$_{5}$Si$_{3}$ and (Nb$_{0.2}$Mo$_{0.3}$W$_{0.3}$Re$_{0.1}$Ru$_{0.1}$)$_{5}$Si$_{3}$. Structural analysis indicates that both HESs consist of a (nearly) ...
2302.00844v1
2024-01-15
Fatigue Behavior of High-Entropy Alloys
High-entropy alloys (HEAs) refer to alloys composed of five or more elements in equal or near-equal amounts or in an atomic concentration range of 5 to 35 atomic percent (at%). Different elemental ratios will affect the microstructures of HEAs and provide them with unique properties. Based on past research, HEAs have e...
2401.07418v1
2024-01-26
Accelerated intermetallic phase amorphization in a Mg-based high-entropy alloy powder
We describe a novel mechanism for the synthesis of a stable high-entropy alloy powder from an otherwise immiscible Mg-Ti rich metallic mixture by employing high-energy mechanical milling. The presented methodology expedites the synthesis of amorphous alloy powder by strategically injecting entropic disorder through the...
2401.15197v2
2024-03-28
High Mobility Charge Transport in a Multicarrier Altermagnet CrSb
A newly identified magnetic phase called altermagnet is being actively studied because of its unprecedented spin-dependent phenomena. Among the candidate materials, CrSb has a particularly high transition temperature and a large spin-splitting energy, but its transport properties have remained unexplored. In this study...
2403.19233v1
2014-02-26
MoS2 P-type Transistors and Diodes Enabled by High Workfunction MoOx Contacts
The development of low-resistance source/drain contacts to transition metal dichalcogenides (TMDCs) is crucial for the realization of high-performance logic components. In particular, efficient hole contacts are required for the fabrication of p-type transistors with MoS2, a model TMDC. Previous studies have shown that...
1402.6632v1
2015-03-23
Electron-Irradiation Induced Nanocrystallization of Pb(II) in Silica Gels Prepared in High Magnetic Field
In a previous study, structure of silica gels prepared in a high magnetic field was investigated. While a direct application of such anisotropic silica gels is for an optical anisotropic medium possessing chemical resistance, we show here their possibility of medium in materials processing. In this direction, for examp...
1503.06863v1
2017-04-07
Thermopower and thermal conductivity in the Weyl semimetal NbP
The Weyl semimetal NbP exhibits an extremely large magnetoresistance (MR) and an ultra-high mobility. The large MR originates from a combination of the nearly perfect compensation between electron- and hole-type charge carriers and the high mobility, which is relevant to the topological band structure. In this work we ...
1704.02241v2
2020-10-29
Two-dimensional hole gas in organic semiconductors
A highly conductive metallic gas that is quantum mechanically confined at a solid-state interface is an ideal platform to explore nontrivial electronic states that are otherwise inaccessible in bulk materials. Although two-dimensional electron gas (2DEG) has been realized in conventional semiconductor interfaces, examp...
2010.15883v1
2021-07-29
Synergetic enhancement of power factor and suppression of lattice thermal conductivity via electronic structure modification and nanostructuring on Ni and B co-doped p-type Si-Ge alloy
For simultaneously achieving the high-power factor and low lattice thermal conductivity of Si-Ge based thermoelectric materials, we employed, in this study, constructively modifying the electronic structure near the chemical potential and nano-structuring by low temperature and high-pressure sintering on nano-crystalli...
2107.13778v1
2021-09-03
Growth and characterization of high-quality single-crystalline SnTe retaining cubic symmetry down to the lowest temperature studied
SnTe, an archetypical topological crystalline insulator, often shows a transition from a highly symmetric cubic phase to a rhombohedral structure at low temperatures. In order to achieve the highly symmetric cubic phase at low temperatures suitable for quantum behaviour, we have employed the modified Bridgman method to...
2109.01420v2
2021-11-22
High-entropy ceramics: propelling applications through disorder
Disorder enhances desired properties, as well as creating new avenues for synthesizing materials. For instance, hardness and yield stress are improved by solid-solution strengthening, a result of distortions and atomic size mismatches. Thermo-chemical stability is increased by the preference of chemically disordered mi...
2111.11519v1
2022-11-08
Observation of room-temperature ferroelectricity in elemental Te nanowires
Ferroelectrics are essential in low-dimensional memory devices for multi-bit storage and high-density integration. A polar structure is a necessary premise for ferroelectricity, mainly existing in compounds. However, it is usually rare in elemental materials, causing a lack of spontaneous electric polarization. Here, w...
2211.04066v1
2009-07-17
Study of timing properties of single gap high-resistive bakelite RPC
The time resolution for several single gap (2 mm) prototype Resistive Plate Chambers (RPC) made of high resistive (bulk resistivity ~ 10^10 - 10^12 ohm cm), 2 mm thick matt finished bakelite paper laminates with silicone coating on the inner surfaces, has been measured. The time resolution for all the modules has been ...
0907.2982v1
2003-09-16
Metal-insulator transition in EuO
It is shown that the spectacular metal-insulator transition in Eu-rich EuO can be simulated within an extended Kondo lattice model. The different orders of magnitude of the jump in resistivity in dependence on the concentration of oxygen vacancies as well as the low-temperature resistance minimum in high-resistivity sa...
0309369v2
2016-08-08
Quantum Criticality and DBI Magneto-resistance
We use the DBI action from string theory and holography to study the magneto-resistance at quantum criticality with hyperscaling violation. We find and analyze a rich class of scaling behaviors for the magneto-resistance. A special case describes the scaling results found in pnictides by Hayers et al. in~\cite{analytis...
1608.02598v2
2023-09-19
Resistivity of the two-dimensional Bose-Hubbard model at weak coupling
We calculate the weak-coupling resistivity of the two-dimensional Bose Hubbard model, comparing with the more familiar fermionic case. At high temperature the resistivity is linear in $T$, while in the low temperature normal state it is exponentially suppressed. We explore the density dependence and calculate the momen...
2309.10782v1
2018-09-24
Ionic Tuning of Cobaltites at the Nanoscale
Control of materials through custom design of ionic distributions represents a powerful new approach to develop future technologies ranging from spintronic logic and memory devices to energy storage. Perovskites have shown particular promise for ionic devices due to their high ion mobility and sensitivity to chemical s...
1809.08728v1
2020-02-17
Ductile and brittle crack-tip response in equimolar refractory high-entropy alloys
Understanding the strengthening and deformation mechanisms in refractory high-entropy alloys (HEAs), proposed as new high-temperature material, is required for improving their typically insufficient room-temperature ductility. Here, density-functional theory simulations and a continuum mechanics analysis were conducted...
2002.07013v1
2019-08-22
Non-localized states and high hole mobility in amorphous germanium
Covalent amorphous semiconductors, such as amorphous silicon (a-Si) and germanium (a-Ge), are commonly believed to have localized electronic states at the top of the valence band and the bottom of the conduction band. Electrical conductivity is thought to be by the hopping mechanism through localized states. The carrie...
1908.08246v1
2020-11-20
StressNet: Deep Learning to Predict Stress With Fracture Propagation in Brittle Materials
Catastrophic failure in brittle materials is often due to the rapid growth and coalescence of cracks aided by high internal stresses. Hence, accurate prediction of maximum internal stress is critical to predicting time to failure and improving the fracture resistance and reliability of materials. Existing high-fidelity...
2011.10227v1
2022-05-16
Single Crystalline 2D Material Nanoribbon Networks for Nanoelectronics
The last decade has seen a flurry of studies related to graphene nanoribbons owing to their potential applications in the quantum realm. However, little experimental work has been reported towards nanoribbons of other 2D materials due to the absence of synthesis routes. Here, we propose a universal approach to synthesi...
2205.09507v1
2023-04-18
Controllable Strain-driven Topological Phase Transition and Dominant Surface State Transport in High-Quality HfTe5 Samples
Controlling materials to create and tune topological phases of matter could potentially be used to explore new phases of topological quantum matter and to create novel devices where the carriers are topologically protected. It has been demonstrated that a trivial insulator can be converted into a topological state by m...
2304.09072v1
2016-12-17
Electric Properties of Dirac Fermions Captured into 3D Nanoporous Graphene Networks
Graphene, as a promising material of post-silicon electronics, opens a new paradigm for the novel electronic properties and device applications. On the other hand, the 2D feature of graphene makes it technically challenging to be integrated into 3D transistors with a sufficient processor capacity. Although there are ma...
1612.05716v1
2017-11-24
Stability of Thin Film Refractory Plasmonic Materials Taken to High Temperatures in Air
Materials such as W, TiN, and SrRuO3 (SRO) have been suggested as promising alternatives to Au and Ag in plasmonic applications owing to their refractory properties. However, investigation of the reproducibility of the optical properties after thermal cycling at high operational temperatures is so far lacking. Here, th...
1711.08923v1
2016-03-17
Transport evidence for the three-dimensional Dirac semimetal phase in ZrTe5
Topological Dirac semimetal is a newly discovered class of materials and has attracted intense attentions. This material can be viewed as a three-dimensional (3D) analogue of graphene and has linear energy dispersion in bulk, leading to a range of exotic transport properties. Here we report direct quantum transport evi...
1603.05351v2
2022-06-16
Scalable Composites Benefiting from Transition-Metal Oxides as Cathode Materials for Efficient Lithium-Sulfur Batteries
Composite materials achieved by including transition-metal oxides with different structures and morphologies in sulfur are suggested as scalable cathodes for high-energy lithium-sulfur (Li-S) batteries. The composites contain 80 wt.% sulfur and 20 wt.% of either MnO2 or TiO2, leading to a sulfur content in the electrod...
2206.14569v1
2024-01-25
Spatially Resolved High Voltage Kelvin Probe Force Microcopy: A Novel Avenue for Examining Electrical Phenomena at Nanoscale
Kelvin probe microscopy (KPFM) is a well-established scanning probe technique, used to measure surface potential accurately; it has found extensive use in the study of a range of materials phenomena. In its conventional form, KPFM frustratingly precludes imaging samples or scenarios where large surface potential exists...
2401.14124v1
2024-02-05
High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip-enhanced Photoluminescence
Straintronics involves the manipulation and regulation of the electronic characteristics of 2D materials through the use of macro- and nano-scale strain engineering. In this study, we utilized an atomic force microscope (AFM) coupled with an optical system to perform indentation measurements and tip-enhanced photolumin...
2402.03061v1
2019-08-11
Magnetotransport as diagnostic of spin reorientation: kagome ferromagnet as a case study
While in most ferro or antiferromagnetic materials there is a unique crystallographic direction, including crystallographically equivalent directions, in which the moments like to point due to spin-orbit coupling, in some, the direction of the spin reorients as a function of a certain physical parameter such as tempera...
1908.03927v1
2021-11-22
Shape-Dependent Multi-Weight Magnetic Artificial Synapses for Neuromorphic Computing
In neuromorphic computing, artificial synapses provide a multi-weight conductance state that is set based on inputs from neurons, analogous to the brain. Additional properties of the synapse beyond multiple weights can be needed, and can depend on the application, requiring the need for generating different synapse beh...
2111.11516v2
2014-11-04
Tackling drug resistant infection outbreaks of global pandemic Escherichia coli ST131 using evolutionary and epidemiological genomics
High-throughput molecular screening is required to investigate the origin and diffusion of antimicrobial resistance in pathogen outbreaks. The most frequent cause of human infection is Escherichia coli, which is dominated by sequence type 131 (ST131), a set of rapidly radiating pandemic clones. The highly infectious cl...
1411.0905v3
2014-09-25
Recycled nylon fibers as cement mortar reinforcement
We investigate engineering applications of recycled nylon fibers obtained from waste fishing nets, focusing our attention on the use of recycled nylon fibers as tensile reinforcement of cementitious mortars. We begin by characterizing the tensile behavior of both unconditioned and alkali-cured recycled nylon fibers obt...
1409.7258v4
2019-05-14
Ohmic contact engineering in few-layer black Phosphorus field effect transistors
Achieving good quality Ohmic contacts to van der Waals materials is a challenge, since at the interface between metal and van der Waals material, different conditions can occur, ranging from the presence of a large energy barrier between the two materials to the metallization of the layered material below the contacts....
1905.05649v1
2019-06-24
Conductivity of Dirac-like surface states in correlated honeycomb transition metal oxide Mott insulators
The search for materials with novel and unusual electronic properties is at the heart of condensed matter physics as well as the basis to develop conceptual new technologies. In this context, the correlated honeycomb transition metal oxides attract large attention for both, being a possible experimental realization of ...
1906.09809v2
2020-07-22
Impact of Li$_{2.9}$B$_{0.9}$S$_{0.1}$O$_{3.1}$ glass additive on the structure and electrical properties of the LATP-based ceramics
The existing solid electrolytes for lithium ion batteries suffer from low total ionic conductivity, which restricts its usefulness for the lithium-ion battery technology. Among them, the NASICON-based materials, such as Li1.3Al0.3Ti1.7(PO4)3 (LATP) exhibit low total ionic conductivity due to highly resistant grain boun...
2007.11244v2
2020-12-16
Anisotropic phonon-mediated electronic transport in chiral Weyl semimetals
Discovery and observations of exotic, quantized optical and electrical responses have sparked renewed interest in nonmagnetic chiral crystals. Within this class of materials, six group V transition metal ditetrelides, that is, XY$_2$ (X = V, Nb, Ta and Y = Si, Ge), host composite Weyl nodes on high-symmetry lines, with...
2012.09207v1
2022-08-15
Valley-coherent quantum anomalous Hall state in AB-stacked MoTe2/WSe2 bilayers
Moir\'e materials provide fertile ground for the correlated and topological quantum phenomena. Among them, the quantum anomalous Hall (QAH) effect, in which the Hall resistance is quantized even under zero magnetic field, is a direct manifestation of the intrinsic topological properties of a material and an appealing a...
2208.07452v1
2022-09-26
Evaluating Effects of Geometry and Material Composition on Production of Transversely Shaped Beams from Diamond Field Emission Array Cathodes
Field emission cathodes (FECs) are attractive for the next generation of injectors due to their ability to provide high current density bright beams with low intrinsic emittance. One application of FECs worthy of special attention is to provide transversely shaped electron beams for emittance exchange that translates a...
2209.13047v1
2023-04-13
Effect of hirtisation on the roughness and fatigue performance of porous titanium lattice structures
Additive manufacturing (AM) has enabled the fabrication of extremely complex components such as porous metallic lattices, which have applications in aerospace, automotive, and in particular biomedical devices. The fatigue resistance of these materials is currently an important limitation however, due to manufacturing d...
2304.06621v1
2024-03-15
An inflated dynamic Laplacian to track the emergence and disappearance of semi-material coherent sets
Lagrangian methods continue to stand at the forefront of the analysis of time-dependent dynamical systems. Most Lagrangian methods have criteria that must be fulfilled by trajectories as they are followed throughout a given finite flow duration. This key strength of Lagrangian methods can also be a limitation in more c...
2403.10360v1
2024-03-20
Tailoring Physical Properties of Crystals through Synthetic Temperature Control: A Case Study for new Polymorphic NbFeTe2 phases
Growth parameters play a significant role in the crystal quality and physical properties of layered materials. Here we present a case study on a van der Waals magnetic NbFeTe2 material. Two different types of polymorphic NbFeTe2 phases, synthesized at different temperatures, display significantly different behaviors in...
2403.13596v1
2022-07-06
Proposal for semiconductor-free negative differential resistance tunnel diode with ultra-high peak-to-valley current ratio
The negative differential resistance (NDR) tunnel diodes are promising alternative devices for beyond-CMOS computing as they offer several potential applications when integrated with transistors. We propose a novel semiconductor-free NDR tunnel diode concept that exhibits an ultra-high peak-to-valley current ratio (PVC...
2207.02593v2
2001-02-12
Temperature- and magnetic-field-dependent resistivity of MgB2 sintered at high temperature and high pressure condition
We report the temperature- and magnetic-field-dependent resistivity of MgB2 sintered at high temperature and high pressure condition. The superconducting transition width for the resistivity measurement was about 0.4 K, and the low-field magnetization showed a sharp superconducting transition with a transition width of...
0102215v4
2017-03-01
Size Dependence of Nanoscale Wear of Silicon Carbide
Nanoscale, single-asperity wear of single-crystal silicon carbide (sc-SiC) and nanocrystalline silicon carbide (nc-SiC) is investigated using single-crystal diamond nanoindenter tips and nanocrystalline diamond atomic force microscopy (AFM) tips under dry conditions, and the wear behavior is compared to that of single-...
1703.01181v1
2022-02-09
Scalable $\rm Al_2O_3-TiO_2$ Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices
Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here we employ a simple and scalable material system of conductive oxide interfaces and leverage their unique properties for a new type of resistive switching...
2202.04477v2
2019-04-07
Phase field modelling of crack propagation in functionally graded materials
We present a phase field formulation for fracture in functionally graded materials (FGMs). The model builds upon homogenization theory and accounts for the spatial variation of elastic and fracture properties. Several paradigmatic case studies are addressed to demonstrate the potential of the proposed modelling framewo...
1904.08749v1
2009-05-13
Reliability of resistivity quantification for shallow subsurface water processes
The reliability of surface-based electrical resistivity tomography (ERT) for quantifying resistivities for shallow subsurface water processes is analysed. A method comprising numerical simulations of water movement in soil and forward-inverse modeling of ERT surveys for two synthetic data sets is presented. Resistivity...
0905.2117v1
2009-06-17
Resistive MHD jet simulations with large resistivity
Axisymmetric resistive MHD simulations for radially self-similar initial conditions are performed, using the NIRVANA code. The magnetic diffusivity could occur in outflows above an accretion disk, being transferred from the underlying disk into the disk corona by MHD turbulence (anomalous turbulent diffusivity), or as ...
0906.3254v1
2011-12-29
Magnetospheric Accretion and Ejection of Matter in Resistive Magnetohydrodynamic Simulations
The ejection of matter in the close vicinity of a young stellar object is investigated, treating the accretion disk as a gravitationally bound reservoir of matter. By solving the resistive MHD equations in 2D axisymmetry using our version of the Zeus-3D code with newly implemented resistivity, we study the effect of ma...
1112.6226v2
2016-10-17
Nonlinear Resistivity for Magnetohydrodynamical Models
A new formulation of the plasma resistivity that arises from the collisional momentum-transfer rate between electrons and ions is presented. The resistivity computed herein is shown to depend not only on the temperature and density but also on all other polynomial velocity-space moments of the distribution function, su...
1610.05193v2
2020-03-09
Quantum mechanical current-to-voltage conversion with quantum Hall resistance array
Accurate measurement of the electric current requires a stable and calculable resistor for an ideal current to voltage conversion. However, the temporal resistance drift of a physical resistor is unavoidable, unlike the quantum Hall resistance directly linked to the Planck constant h and the elementary charge e. Lack o...
2003.04464v1
2021-02-11
Suppressing evolution through environmental switching
Ecology and evolution under changing environments are important in many subfields of biology with implications for medicine. Here, we explore an example: the consequences of fluctuating environments on the emergence of antibiotic resistance, which is an immense and growing problem. Typically, high doses of antibiotics ...
2102.05813v2
2023-12-08
Electron-hole collision-limited resistance of gapped graphene
Collisions between electrons and holes can dominate the carrier scattering in clean graphene samples in the vicinity of charge neutrality point. While electron-hole limited resistance in pristine gapless graphene is well-studied, its evolution with induction of band gap $E_g$ is less explored. Here, we derive the funct...
2312.05066v1
2019-03-18
Experimental and Theoretical Investigation on the Possible Half-metallic Behaviour of Equiatomic Quaternary Heusler Alloys: CoRuMnGe and CoRuVZ (Z = Al, Ga)
In this report, structural, electronic, magnetic and transport properties of quaternary Heusler alloys CoRuMnGe and CoRuVZ (Z = Al, Ga) are investigated. All the three alloys are found to crystallize in cubic structure. CoRuMnGe exhibits L2$_1$ structure whereas, the other two alloys have B2-type disorder. For CoRuMnGe...
1903.07265v2
2021-05-06
High-sensitivity of initial SrO growth on the residual resistivity in epitaxial thin films of SrRuO$_3$ on SrTiO$_3$ (001)
The growth of SrRuO$_3$ (SRO) thin film with high-crystallinity and low residual resistivity (RR) is essential to explore its intrinsic properties. Here, utilizing the adsorption-controlled growth technique, the growth condition of initial SrO layer on TiO$_2$-terminated SrTiO$_3$ (STO) (001) substrate was found to be ...
2105.02404v1
2021-12-01
Synthesis and study of (Na, Zr) and (Ca, Zr) phosphate-molybdates and phosphate-tungstates: Thermal expansion behavior, radiation test and hydrolytic stability
Thermal expansion behavior at high temperatures of synthesized Na$_{1-x}$Zr$_2$(PO$_4$)$_{3-x}$(XO$_4$)$_x$, and Ca$_{1-x}$Zr$_2$(PO$_4$)$_{3-x}$(XO$_4$)$_x$, X = Mo, W compounds has been investigated. Ceramics with relatively high density (more than 97.5%) were produced by Spark Plasma Sintering (SPS) of submicron pow...
2112.00373v1
2021-02-22
High T$_C$ ferromagnetic inverse Heusler alloys: A comparative study of Fe$_2$RhSi and Fe$_2$RhGe
We report the results of experimental investigations on structural, magnetic, resistivity, caloric properties of Fe$_2$RhZ (Z=Si,Ge) along with \textit{ab-initio} band structure calculations using first principle simulations. Both these alloys are found to crystallize in inverse Heusler structure but with disorder in t...
2102.10967v1
1995-11-10
Contrasting Dynamic Spin Susceptibility Models and their Relation to High Temperature Superconductivity
We compare the normal-state resistivities $\rho$ and the critical temperatures $T_c$ for superconducting $d_{x^2-y^2}$ pairing due to antiferromagnetic (AF) spin fluctuation exchange in the context of the two phenomenological dynamical spin susceptibility models, recently proposed by Millis, Monien, and Pines (MMP) and...
9511051v1
2011-11-14
High Field (14Tesla) Magneto Transport of Sm/PrFeAsO
We report high field magneto transport of Sm/PrFeAsO. Below spin density wave transition (TSDW), the magneto-resistance (MR) of Sm/PrFeAsO is positive and increasing with decreasing temperature. The MR of SmFeAsO, is found 16%, whereas the same is 21.5% in case of PrFeAsO, at 2.5 K under applied magnetic field of 14 Te...
1111.3143v2
2013-02-25
On the specifics of the electrical conductivity anomalies in PVC nanocomposites
A qualitative model describing the "anomalous" features of the conductivity of polymer nanocomposites, in particular, switching to the conducting state in relatively thick (tens of microns or more) of flexible PVC films is considered. In previously published experimental results, change of conductivity by 10 or more or...
1302.5993v1
2016-12-15
The properties of ultrapure delafossite metals
Although they were first synthesized in chemistry laboratories nearly fifty years ago, the physical properties of the metals PdCoO2, PtCoO2 and PdCrO2 have only more recently been studied in detail. The delafossite structure contains triangular co-ordinated atomic layers, and electrical transport in the delafossite met...
1612.04948v1
2017-10-05
Dual-wavelength Photo-Hall effect spectroscopy of deep levels in high resistive CdZnTe with negative differential photoconductivity
Photo-Hall effect spectroscopy was used in the study of deep levels in high resistive CdZnTe. The monochromator excitation in the photon energy range 0.65-1.77 eV was complemented by a laser diode high-intensity excitation at selected photon energies. A single sample characterized by multiple unusual features like nega...
1710.01945v1
2020-02-25
Hydrogenated amorphous silicon detectors for particle detection, beam flux monitoring and dosimetry in high-dose radiation environment
Hydrogenated amorphous silicon (a-Si:H) has remarkable radiation resistance properties and can be deposited on a lot of different substrates. A-Si:H based particle detectors have been built since mid 1980s as planar p-i-n or Schottky diode structures; the thickness of these detectors ranged from 1 to 50 micron. However...
2002.10848v1
2021-01-29
Wide-range epitaxial strain control of electrical and magnetic properties in high-quality SrRuO3 films
Epitaxial strain in 4d ferromagnet SrRuO3 films is directly linked to the physical properties through the strong coupling between lattices, electrons, and spins. It provides an excellent opportunity to tune the functionalities of SrRuO3 in electronic and spintronic devices. However, a thorough understanding of the epit...
2101.12376v1
2020-05-16
Pressure-induced Topological and Structural Phase Transitions in an Antiferromagnetic Topological Insulator
Recently, natural van der Waals heterostructures of (MnBi2Te4)m(Bi2Te3)n have been theoretically predicted and experimentally shown to host tunable magnetic properties and topologically nontrivial surface states. In this work, we systematically investigate both the structural and electronic responses of MnBi2Te4 and Mn...
2005.08015v1
2020-08-03
Solute hydrogen and deuterium observed at the near atomic scale in high-strength steel
Observing solute hydrogen (H) in matter is a formidable challenge, yet, enabling quantitative imaging of H at the atomic-scale is critical to understand its deleterious influence on the mechanical strength of many metallic alloys that has resulted in many catastrophic failures of engineering parts and structures. Here,...
2008.00684v1
2021-07-01
Singular angular magnetoresistance and sharp resonant features in a high-mobility metal with open orbits, ReO3
We report high-resolution angular magnetoresistance (AMR) experiments performed on crystals of ReO$_3$ with high mobility (90,000 cm$^2$/Vs at 2 K) and extremely low residual resistivity (5-8 n$\Omega$cm). The Fermi surface, comprised of intersecting cylinders, supports open orbits. The resistivity $\rho_{xx}$ in a mag...
2107.00742v1
2021-07-07
Development and validation of electrical-insulating Al2O3 coatings for high-temperature liquid PbLi applications
Electrical-insulating coatings are of great importance for liquid-metal breeder/coolant based systems relevant to fusion power plants. In specific to Pb-16Li eutectic, a candidate breeder material, such coatings are being actively investigated for their criticality in addressing various functionalities. For such applic...
2107.03244v1
2021-09-26
Tomographic Volumetric Additive Manufacturing of Silicon Oxycarbide Ceramics
Ceramics are highly technical materials with properties of interest for multiple industries. Precisely because of their high chemical, thermal, and mechanical resistance, ceramics are difficult to mold into complex shapes. A possibility to make convoluted ceramic parts is to use preceramic polymers (PCP) in liquid form...
2109.12680v1
2022-11-16
Characterisation of Gamma-irradiated MCz-Silicon Detectors with a High-$K$ Negative Oxide as Field Insulator
The high-luminosity operation of the Tracker in the Compact Muon Solenid (CMS) detector at the Large Hadron Collider (LHC) experiment calls for the development of silicon-based sensors. This involves implementation of AC-coupling to micro-scale pixel sensor areas to provide enhanced isolation of radiation-induced leaka...
2211.09158v2
2023-07-12
Extrinsic Anomalous Hall effect in Mn Doped GeSnTe Semiconductors in the Bad Metal Hopping Regime
We present high field magnetotransport studies of Ge1-x-y(SnxMny)Te bulk multiferroics with diamagnetic Sn and paramagnetic Mn concentration x = 0.38 to 0.79 and y = 0.02 to 0.086, respectively. The zero field resistivity, {\rho}(T) takes significant contribution from defects below T = 20 K however, a mixed scattering ...
2307.06271v1
2012-10-07
Tailoring Magnetism of Perpendicularly Magnetized MnxGa Epitaxial Films on GaAs for Practical Applications
MnxGa films with high perpendicular anisotropy, coercivity and energy product have great application potential in ultrahigh-density perpendicular recording, permanent magnets, spin-transfer-torque memory and oscillators, magneto-resistance sensors and ferromagnetic metal/semiconductor heterostructure devices. Here we p...
1210.2062v3
2012-11-14
The Critical Current Density of an SNS Josephson-Junction
The critical current density (Jc) through a superconductor in high magnetic fields is controlled by the inclusions and microstructure of the material that hold fluxons stationary to keep the resistance zero and is described using Ginzburg-Landau (G-L) theory. Although the functional form of Jc for superconducting-norma...
1211.3255v2
2013-09-08
Nanoscale resolution scanning thermal microscopy with thermally conductive nanowire probes
Scanning thermal microscopy (SThM) - a type of scanning probe microscopy that allows mapping thermal transport and temperatures in nanoscale devices, is becoming a key approach that may help to resolve heat dissipation problems in modern processors and develop new thermoelectric materials. Unfortunately, performance of...
1309.2010v1
2019-09-13
Electric field and current induced electroforming modes in NbOx
Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path in the oxide film. Here we use a simple photoresist-based detection technique to map the spatial distribution of conductive filaments formed in Nb/NbOx/Pt devices, and correlate these with c...
1909.06443v2
2000-05-25
Critical Resistivity along the Quantum Hall Liquid--Insulator Transition Line
The critical resistivity measured along the quantum Hall liquid--insulator transition line indicates a pronounced peak at a critical filling factor close to 1, which marks the crossover from the high to low magnetic field regime in the phase diagram. The origin of this behavior is explained in the framework of classica...
0005436v1