publicationDate stringlengths 10 10 | title stringlengths 17 233 | abstract stringlengths 20 3.22k | id stringlengths 9 12 |
|---|---|---|---|
2017-06-23 | Fabrication of highly dense isotropic Nd-Fe-B bonded magnets via extrusion-based additive manufacturing | Isotropic bonded magnets with a high loading fraction of 70 vol.% Nd-Fe-B are
fabricated via an extrusion-based additive manufacturing, or 3D printing system
that enables rapid production of large parts for the first time. The density of
the printed magnet is 5.15 g/cm3. The room temperature magnetic properties are:
in... | 1706.07792v1 |
2017-10-11 | Pressure Induced Superconductivity in the New Compound ScZrCo1-$δ$ | It is widely perceived that the correlation effect may play an important role
in several unconventional superconducting families, such as cuprate, iron-based
and heavy-fermion superconductors. The application of high pressure can tune
the ground state properties and balance the localization and itineracy of
electrons i... | 1710.04047v1 |
2019-05-07 | Nonsaturating magnetoresistance and nontrivial band topology of type-II Weyl semimetal NbIrTe4 | Weyl semimetals, characterized by nodal points in the bulk and Fermi arc
states on the surface, have recently attracted extensive attention due to the
potential application on low energy consumption electronic materials. In this
report, the thermodynamic and transport properties of a theoretically predicted
Weyl semime... | 1905.02455v1 |
2014-08-29 | Exotic Kondo crossover in a wide temperature region in the topological Kondo insulator SmB6 revealed by high-resolution ARPES | Temperature dependence of the electronic structure of SmB6 is studied by
high-resolution ARPES down to 1 K. We demonstrate that there is no essential
difference for the dispersions of the surface states below and above the
resistivity saturating anomaly (~ 3.5 K). Quantitative analyses of the surface
states indicate th... | 1408.7090v1 |
2018-10-08 | Correlation between scale-invariant normal state resistivity and superconductivity in an electron-doped cuprate | An understanding of the normal state in the high-temperature superconducting
cuprates is crucial to the ultimate understanding of the long-standing problem
of the origin of the superconductivity itself. This so-called strange metal
state is thought to be associated with a quantum critical point (QCP) hidden
beneath the... | 1810.03499v1 |
2017-04-12 | Fabrication of Simple Apparatus for Resistivity Measurement in High Temperature Range 300-620 K | A simple and low cost apparatus has been designed and built to measure the
electrical resistivity, ($\rho$), of metal and semiconductors in 300-620 K
temperature range. The present design is suitable to do measurement on
rectangular bar sample by using conventional four-probe dc method. A small
heater is made on the sa... | 1704.04122v1 |
2019-03-15 | Enhanced Tunnelling in a Hybrid of Single-Walled Carbon Nanotubes and Graphene | Transparent and conductive films (TCFs) are of great technological
importance. The high transmittance, electrical conductivity and mechanical
strength make single-walled carbon nanotubes (SWCNTs) a good candidate for
their raw material. Despite the ballistic transport in individual SWCNTs,
however, the electrical condu... | 1903.06449v1 |
2019-04-04 | Anomalous high-magnetic field electronic state of the nematic superconductors FeSe$_{1-x}$S$_x$ | Understanding superconductivity requires detailed knowledge of the normal
electronic state from which it emerges. A nematic electronic state that breaks
the rotational symmetry of the lattice can potentially promote unique
scattering relevant for superconductivity. Here, we investigate the normal
transport of supercond... | 1904.02522v1 |
2019-08-13 | Magnetization Current Simulation of High Temperature Bulk Superconductors Using A-V-A Formulation and Iterative Algorithm Method: Critical State Model and Flux Creep Model | In this work we will introduce the A-V-A formulation based iterative
algorithm method (IAM) for simulating the magnetization current of high
temperature superconductors. This new method embedded in ANSYS can simulate the
critical state model by forcing the trapped current density to the critical
current density Jc for ... | 1908.04640v2 |
2015-07-17 | Study of the Effects of High-Energy Proton Beams on Escherichia Coli | Antibiotic-resistant bacterial infection becomes one of the most serious
risks to public health care today. However, discouragingly, the development of
new antibiotics has been little progressed over the last decade. There is an
urgent need of the alternative approaches to treat the antibiotic-resistant
bacteria. The n... | 1507.04863v1 |
2020-12-02 | Incoherent transport across the strange metal regime of highly overdoped cuprates | Strange metals possess highly unconventional transport characteristics, such
as a linear-in-temperature ($T$) resistivity, an inverse Hall angle that varies
as $T^2$ and a linear-in-field ($H$) magnetoresistance. Identifying the origin
of these collective anomalies has proved profoundly challenging, even in
materials s... | 2012.01208v2 |
2021-11-16 | Orbital Selective Kondo Effect in Heavy Fermion Superconductor UTe$_{2}$ | It has been a great challenge to explore many-body effects in heavy fermion
systems with $ab$-$initio$ approaches. We computed the electronic structure of
UTe$_{2}$ without purposive judgements, such as intentional selection of
on-site Coulomb interaction and disregarding spin-orbit coupling. We show that
U-5$f$ electr... | 2111.08800v4 |
2022-07-10 | Engineering underdoped CuO$_2$ nanoribbons in nm-thick $a$-axis YBa$_2$Cu$_3$O$_{7-δ}$ films | In underdoped cuprate high $T_{\mathrm{c}}$ superconductors, various local
orders and symmetry breaking states, in addition to superconductivity, reside
in the CuO$_2$ planes. The confinement of the CuO$_2$ planes can therefore play
a fundamental role in modifying the hierarchy between the various orders and
their inte... | 2207.04541v3 |
2022-12-11 | Strain induced variations in transport and optical properties of SrVO$_3$: a DFT+U study | First-principles calculations based on density functional theory + Hubbard U
(DFT+U) approach have been carried out to study the strain induced variations
in the optical and transport properties of the correlated perovskite SrVO$_3$.
By virtue of its conductivity, high carrier mobility and optical transparency,
SrVO$_3... | 2212.05449v1 |
2022-12-19 | Optical Switching in Tb/Co-Multilayer Based Nanoscale Magnetic Tunnel Junctions | Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory
devices. For high-speed and low-power data storage and processing applications,
fast reversal by an ultrashort laser pulse is extremely important. We
demonstrate optical switching of Tb/Comultilayer-based nanoscale MTJs by
combining optical writin... | 2212.10361v1 |
2023-02-02 | Controlling the Skyrmion Density and Size for Quantized Convolutional Neural Networks | Skyrmion devices show energy efficient and high integration data storage and
computing capabilities. Herein, we present the results of experimental and
micromagnetic investigations of the creation and stability of magnetic
skyrmions in the Ta/IrMn/CoFeB/MgO thin film system. We investigate the
magnetic-field dependence... | 2302.01390v1 |
2023-03-04 | High pressure ferroelectric-like semi-metallic state in $Eu-$doped $BaTiO_3$ | We have conducted a detailed high-pressure (HP) investigation on $Eu-$doped
$BaTiO_3$ using angle-resolved x-ray diffraction, Raman spectroscopy,
dielectric permittivity and dc resistance measurements. The x-ray diffraction
data analysis shows a pressure-induced structural phase transition from the
ambient tetragonal t... | 2303.02329v2 |
2023-09-21 | High-Conductance, Ohmic-like HfZrO$_4$ Ferroelectric Memristor | The persistent and switchable polarization of ferroelectric materials based
on HfO$_2$-based ferroelectric compounds, compatible with large-scale
integration, are attractive synaptic elements for neuromorphic computing. To
achieve a record current density of 0.01 A/cm$^2$ (at a read voltage of 80 mV)
as well as ideal m... | 2309.12070v1 |
2023-12-27 | Inkjet-Printed High-Yield, Reconfigurable, and Recyclable Memristors on Paper | Reconfigurable memristors featuring neural and synaptic functions hold great
potential for neuromorphic circuits by simplifying system architecture, cutting
power consumption, and boosting computational efficiency. Their additive
manufacturing on sustainable substrates offers unique advantages for future
electronics, i... | 2312.16501v1 |
2018-06-20 | Linear-$T$ resistivity at high temperature | The linear-$T$ resistivity is one of the characteristic and universal
properties of strange metals. There have been many progress in understanding it
from holographic perspective (gauge/gravity duality). In most holographic
models, the linear-$T$ resistivity is explained by the property of the infrared
geometry and val... | 1806.07739v2 |
2018-07-18 | Multi-band effects in in-plane resistivity anisotropy of strain-detwinned disordered Ba(Fe$_{1-x}$Ru$_{x}$)$_{2}$As$_{2}$ | In-plane resistivity anisotropy was measured in strain-detwinned as-grown and
partially annealed samples of isovalently-substituted
$\mathrm{Ba(Fe_{1-x}Ru_{x})_{2}As_{2}}$ ($0<x \leq 0.125$) and the results were
contrasted with previous reports on anneal samples with low residual
resistivity. In samples with high resid... | 1807.07130v1 |
2022-07-21 | Energy-scale competition in the Hall resistivity of a strange metal | Anomalous transport behavior -- both longitudinal and Hall -- is the defining
characteristic of the strange-metal state of High-Tc cuprates. The temperature,
frequency, and magnetic field dependence of the resistivity is understood
within strange metal phenomenology as resulting from energy-scale competition
to set the... | 2207.10244v1 |
2022-04-26 | Flexibility of Fluorinated Graphene-Based Materials | The resistivity of different films and structures containing fluorinated
graphene (FG) flakes and chemical vapor deposition (CVD) grown graphene of
various fluorination degrees under tensile and compressive strains due to
bending deformations was studied. Graphene and multilayer graphene films grown
by means of the CVD... | 2204.12596v1 |
2021-03-18 | Topological Semimetals for Scaled Back-End-Of-Line Interconnect Beyond Cu | The resistance bottleneck in metal-interconnect scaling calls for new
interconnect materials. This paper explores topological semimetals as a
potential solution. After reviewing the desirable properties of topological
semimetals for back-end-of-line (BEOL) interconnects, we use CoSi as an example
to demonstrate the dec... | 2103.10505v1 |
2021-08-31 | Magnetoresistance and Scaling Laws in Type-II Weyl Semimetal WP_2 | Topological materials with extremely large magnetoresistance exhibit a
prognostic feature of resistivity turn-on behaviour. This occurs when the
temperature dependence of resistivity changes from metallic to semiconducting
characteristics on application of external magnetic field above a threshold
value. Here, we study... | 2108.13981v1 |
2017-11-29 | Coexistence of superconductivity and charge-density wave in the quasi-one-dimensional material HfTe3 | We present the first experimental evidence for metallicity, superconductivity
(SC) and the co-existence of charge density waves (CDW) in the
quasi-one-dimensional material HfTe3. The existence of such phenomena is a
typical characteristic of the transition metal chalcogenides however, without
the application of hydrost... | 1711.10628v1 |
1995-03-08 | Model of C-Axis Resistivity of High-$\Tc$ Cuprates | We propose a simple model which accounts for the major features and
systematics of experiments on the $c$-axis resistivity, $\rho_c$, for $\lsco$,
$\ybco$ and $\bsco $. We argue that the $c$-axis resistivity can be separated
into contributions from in-plane dephasing and the $c$-axis ``barrier''
scattering processes, w... | 9503044v1 |
1998-09-29 | Point contact spectroscopy and temperature dependence of resistivity of metallic sodium tungsten bronzes -Role of optical phonons | In this paper we report the results of electrical resistivity (1.5K < T
<300K) and point contact spectroscopy (PCS) measurements on single crystals of
metallic sodium tungsten bronze with varying sodium content. We have shown that
the electron-phonon coupling function as measured through PCS can explain
quantitatively ... | 9809393v1 |
1998-11-24 | Ac transport studies in polymers by a resistor network and transfer matrix approaches: application to polyaniline | A statistical model of resistor network is proposed to describe a polymer
structure and to simulate the real and imaginary components of its ac
resistivity. It takes into account the polydispersiveness of the material as
well as intrachain and interchain charge transport processes. By the
application of a transfer matr... | 9811335v1 |
1999-02-22 | La substitution induced linear temperature dependence of electrical resistivity and Kondo behavior in the alloys, Ce_{2-x}La_{x}CoSi_{3} | The results of electrical resistivity, heat capacity and magnetic
susceptibility behavior of new class of alloys, Ce_{2-x}La_{x}CoSi_{3}, are
reported. The x= 0.0 alloy is mixed valent and La substitution for Ce (x= 0.25)
induces linear temperature dependence of resistivity at low temperatures, an
observation of releva... | 9902298v1 |
1999-04-06 | Conductance of Distorted Carbon Nanotubes | We have calculated the effects of structural distortions of armchair carbon
nanotubes on their electrical transport properties. We found that the bending
of the nanotubes decreases their transmission function in certain energy ranges
and leads to an increased electrical resistance. Electronic structure
calculations sho... | 9904083v1 |
1999-07-31 | Characterisation, Raman, Magnetic and Resistivity measurements in polycrystalline samples of LaMnO3 doped with Cd | We report a study of polycrystalline samples of the family La1-xCdxMnO3+dwith
different percentage of Mn4+ ions. X-rays diffraction, Iodometric titration,
Raman, Magnetic and Electrical Resistivity measurements provide a general
characterisation of the physical properties. Results are qualitatively similar
to the ones ... | 9908006v2 |
2000-05-19 | Interface resistance of disordered magnetic multilayers | We study the effect of interface disorder on the spin-dependent interface
resistances of Co/Cu, Fe/Cr and Au/Ag multilayers using a newly developed
method for calculating transmission matrices from first-principles. The
efficient implementation using tight-binding linear-muffin-tin orbitals allows
us to model interface... | 0005314v1 |
2000-09-04 | Magnon scattering processes and low temperature resistivity in CMR manganites | Low temperature resistivity of CMR manganites is investigated. At the ground
state, conduction electrons are perfectly spin polarized, which is called
half-metallic. From one-magnon scattering processes, it is discussed that the
resistivity of a half metal as a function of temperature scales as rho(T) -
rho(0) propto T... | 0009036v1 |
2000-10-26 | Magnetic-history-dependent nanostructural and resistivity changes in Pr0.5Ca0.5Mn0.98Cr0.02O3 | We show that nanostructure and resistivity of Pr0.5Ca0.5Mn0.98Cr0.02O3 are
sensitive to whether the sample is zero-field-cooled (ZFC) of field-cooled (FC)
either in the 'self magnetic field (H = 2 T)' of the electron microscope or
under the external magnetic field of 2 T. FC resistivity at H = 2 T is lower
than ZFC val... | 0010427v1 |
2000-10-30 | Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem | Theory of electrical spin injection from a ferromagnetic (FM) metal into a
normal (N) conductor is presented. We show that tunnel contacts (T) can
dramatically increase spin injection and solve the problem of the mismatch in
the conductivities of a FM metal and a semiconductor microstructure. We also
present explicit e... | 0010473v1 |
2001-11-09 | A common origin for the resistivity of Cd$_2$Re$_2$O$_7$, the cuprates, and Sr$_2$RuO$_4$? | We propose an explanation for the temperature dependence of the resistivity
of Cd$_2$Re$_2$O$_7$, including the regime above the structural phase
transition at $T$=200 $^o$K. The mechanism involved relies on the existence of
a strong van Hove singularity close to the Fermi surface, which is evidenced by
relevant band s... | 0111166v1 |
2002-04-09 | Electrical transport properties of bulk MgB2 materials synthesized by the electrolysis on fused mixtures of MgCl2, NaCl, KCl and MgB2O4 | Electrolysis was carried out on fused mixtures of MgCl2, NaCl, KCl and MgB2O4
under an Ar flow at 600C. Electrical resistivity measurements for the grown
deposits show an onset of superconducting transition at 37 K in the absence of
applied magnetic field. The resistivity decreases down to zero below 32 K. From
an appl... | 0204208v1 |
2002-05-22 | Scattering theory of interface resistance in magnetic multilayers | The scattering theory of transport has to be applied with care in a diffuse
environment. Here we discuss how the scattering matrices of heterointerfaces
can be used to compute interface resistances of dirty magnetic multilayers.
First principles calculations of these interface resistances agree well with
experiments in... | 0205452v1 |
2002-09-05 | Magnetoresistance and Hall Effect in the Ferromagnetic Semiconductor GaMnAs | The resistivity, temperature, and magnetic field dependence of the anomalous
Hall effect in a series of metallic Ga1-xMnxAs thin films with 0.015=<x=<0.08
is presented. A quadratic dependence of the anomalous Hall resistance on the
resistivity is observed, with a magnitude which is in agreement with Berry
phase theorie... | 0209123v1 |
2003-04-06 | Microwave Residual Surface Resistance of Superconductors | Two distinct models account for the microwave residual surface resistance of
superconducting cavities with equally good agreement with the measured
temperature and frequency dependence. In presenting his phonon-generation
model, Passow claimed that Rabinowitz' fluxoid power-loss model of residual
resistance does not fi... | 0304139v1 |
2004-02-17 | Peculiarities of the resistive transition in fractal superconducting structures | The influence of fractal clusters of a normal phase on the current-voltage
characteristics of a percolation superconductor in the region of a resistive
transition has been studied. The clusters represent the aggregates of columnar
defects, which give rise to a correlated microscopic disorder in the system.
Dependencies... | 0402437v2 |
2005-04-08 | Temperature dependent asymmetry of the nonlocal spin-injection resistance: evidence for spin non-conserving interface scattering | We report nonlocal spin injection and detection experiments on mesoscopic
Co-Al2O3-Cu spin valves. We have observed a temperature dependent asymmetry in
the nonlocal resistance between parallel and antiparallel configurations of the
magnetic injector and detector. This strongly supports the existence of a
nonequilibriu... | 0504201v2 |
2005-09-29 | Charge-transfer polaron induced negative differential resistance and giant magnetoresistance in organic spintronics: A Su-Schrieffer-Heeger model study | Combining the Su-Schrieffer-Heeger model and the non-equilibrium Green's
function formalism, we investigate the negative differential resistance effect
in organic spintronics at low temperature and interprete it with a self-doping
picture. A giant negative magnetoresistance exceeding 300% is theoretically
predicted as ... | 0509761v2 |
2005-12-30 | A Tunable Anomalous Hall Effect in a Non-Ferromagnetic System | We measure the low-field Hall resistivity of a magnetically-doped
two-dimensional electron gas as a function of temperature and
electrically-gated carrier density. Comparing these results with the carrier
density extracted from Shubnikov-de Haas oscillations reveals an excess Hall
resistivity that increases with decrea... | 0512730v1 |
2006-01-30 | Magnetic Moment Softening and Domain Wall Resistance in Ni Nanowires | Magnetic moments in atomic scale domain walls formed in nanoconstrictions and
nanowires are softened which affects dramatically the domain wall resistance.
We perform ab initio calculations of the electronic structure and conductance
of atomic-size Ni nanowires with domain walls only a few atomic lattice
constants wide... | 0601662v1 |
2006-08-10 | Friedel oscillations, impurity scattering and temperature dependence of resistivity in graphene | We show that Friedel oscillations (FO) in grapehene are strongly affected by
the chirality of electrons in this material. In particular, the FO of the
charge density around an impurity show a faster, $1/r^3$, decay than in
conventional 2D electron systems and do not contribute to a linear
temperature-dependent correcti... | 0608228v2 |
2006-10-19 | Magneto-resistive memory in ferromagnetic (Ga,Mn)As nanostructures | We show a novel magneto-resistive effect that appears in lithographically
shaped, three-arm nanostructure, fabricated from ferromagnetic (Ga,Mn)As
layers. The effect, related to a rearrangement of magnetic domain walls between
different pairs of arms in the structure, reveals as a dependence of zero-field
resistance on... | 0610535v1 |
2006-11-06 | Unusual field and temperature dependence of Hall effect in graphene | We calculate the classic Hall conductivity and mobility of the undoped and
doped (or in the gate voltage) graphene as a function of temperature, magnetic
field, and carrier concentration. Carrier collisions with defects and acoustic
phonons are taken into account. The Hall resistivity varies almost linearly
with temper... | 0611147v2 |
2006-11-30 | Anisotropic magnetoresistance contribution to measured domain wall resistances of in-plane magnetised (Ga,Mn)As | We demonstrate the presence of an important anisotropic magnetoresistance
contribution to the domain wall resistance recently measured in thin-film
(Ga,Mn)As with in-plane magnetic anisotropy. Analytic results for simple domain
wall orientations supplemented by numerical results for more general cases show
this previou... | 0611780v1 |
2006-12-16 | Transmission Line Impedance of Carbon Nanotube Thin Films for Chemical Sensing | We measure the resistance and frequency-dependent gate capacitance of carbon
nanotube (CNT) thin films in ambient, vacuum, and under low-pressure (10E-6
torr) analyte environments. We model the CNT film as an RC transmission line
and show that changes in the measured capacitance as a function of gate bias
and analyte p... | 0612432v1 |
2007-03-01 | Bias-dependent Contact Resistance in Rubrene Single-Crystal Field-Effect Transistors | We report a systematic study of the bias-dependent contact resistance in
rubrene single-crystal field-effect transistors with Ni, Co, Cu, Au, and Pt
electrodes. We show that the reproducibility in the values of contact
resistance strongly depends on the metal, ranging from a factor of two for Ni
to more than three orde... | 0703029v1 |
2004-02-14 | Theory of resistor networks: The two-point resistance | The resistance between arbitrary two nodes in a resistor network is obtained
in terms of the eigenvalues and eigenfunctions of the Laplacian matrix
associated with the network. Explicit formulas for two-point resistances are
deduced for regular lattices in one, two, and three dimensions under various
boundary condition... | 0402038v2 |
2004-12-17 | Introductory physics: The new scholasticism | Most introductory physics textbooks neglect air resistance in situations
where an astute student can observe that it dominates the dynamics. We give
examples from many books. Using dimensional analysis we discuss how to estimate
the relative importance of air resistance and gravity. The discussion can be
used to mitiga... | 0412107v2 |
2008-10-22 | Scaling behaviors of RESET voltages and currents in unipolar resistance switching | Unipolar switching phenomena have attracted a great deal of recent attention,
but the wide distributions of switching voltages still pose major obstacles for
scientific advancement and practical applications. Using NiO capacitors, we
investigated the distributions of the RESET voltage and current. We found that
they sc... | 0810.4043v1 |
2008-10-29 | FeTe as a candidate material for new iron-based superconductor | Tetragonal FeSe is a superconductor with a transition temperature Tc of 8 K
and shows a huge enhancement of Tc with applying pressure. Tetragonal FeTe has
a structure very analogous to superconducting FeSe, but does not show
superconducting transition. We investigated the pressure effect of resistivity
on FeTe. The res... | 0810.5191v1 |
2008-11-27 | Electrical resistance of Ni nanowires (diameter greater than or equal to 20 nm) near the Curie Temperatures | In this letter we report electrical transport measurements on nickel
nanowires of diameters down to 20 nm in the region close to its
paramagnetic-ferromagnetic transition temperature T_C (reduced temperature|t|
less than or equal to 0.001). The data analysis done in the frame work of
critical behavior of resistance nea... | 0811.4544v1 |
2009-01-04 | Current Oscillations and Negative Resistances in Crossed Carbon Nanotubes Suspended Over a Dielectric Trench | An oscillatory dependence of the drain current on the drain voltage is found
in a nanostructure consisting of two crossing semiconductor carbon nanotubes
that are suspended over a dielectric trench, which is backed by a doped silicon
substrate that acts as a gate. Alternating positive and negative differential
resistan... | 0901.0363v1 |
2009-01-05 | Contact resistance in graphene-based devices | We report a systematic study of the contact resistance present at the
interface between a metal (Ti) and graphene layers of different, known
thickness. By comparing devices fabricated on 11 graphene flakes we demonstrate
that the contact resistance is quantitatively the same for single-, bi-, and
tri-layer graphene ($\... | 0901.0485v1 |
2009-03-09 | Predictability of reset switching voltages in unipolar resistance switching | In unipolar resistance switching of NiO capacitors, Joule heating in the
conducting channels should cause a strong nonlinearity in the low resistance
state current-voltage (I-V) curves. Due to the percolating nature of the
conducting channels, the reset current IR, can be scaled to the nonlinear
coefficient Bo of the I... | 0903.1490v1 |
2009-03-17 | Electronic transport in ferromagnetic conductors with inhomogeneous magnetic order parameter -- domain-wall resistance | We microscopically derive transport equations for the conduction electrons in
ferromagnetic materials with an inhomogeneous magnetization profile. Our
quantum kinetic approach includes elastic scattering and anisotropic spin-flip
scattering at magnetic impurities. In the diffusive limit, we calculate the
resistance thr... | 0903.3033v2 |
2009-06-02 | Effect of annealing on the magnetic and superconducting properties of single-crystalline UCoGe | Single-crystals of the new ferromagnetic superconductor UCoGe have been
grown. The quality of as-grown samples can be significantly improved by a
heat-treatment procedure, which increases the residual resistance ratio (RRR)
from ~5 to ~30. Magnetization and resistivity measurements show the annealed
samples have a shar... | 0906.0497v1 |
2009-07-21 | Memristive switching of MgO based magnetic tunnel junctions | Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive
switching (RS), can be observed simultaneously in nano-scale magnetic tunnel
junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %.
For each magnetic state, multiple resistive sates are created depending on the
bias histo... | 0907.3684v1 |
2010-03-03 | In-situ direct visualization of irradiated e-beam patterns on unprocessed resists using atomic force microscopy | We introduce an in-situ characterization method of resists used for e-beam
lithography. The technique is based on the application of an atomic force
microscope which is directly mounted below the cathode of an electron-beam
lithography system. We demonstrate that patterns irradiated by the e-beam can
be efficiently vis... | 1003.0796v1 |
2010-06-06 | Spin Resistivity in Frustrated Antiferromagnets | In this paper we study the spin transport in frustrated antiferromagnetic FCC
films by Monte Carlo simulation. In the case of Ising spin model, we show that
the spin resistivity versus temperature exhibits a discontinuity at the phase
transition temperature: an upward jump or a downward fall, depending on how
many para... | 1006.1081v2 |
2010-07-20 | First-principles studies on electrical resistivity of iron under pressure | We investigate the temperature and pressure dependences of the electrical
resistivity for bcc and hcp Fe using the low-order variational approximation
and theoretical transport spectral functions calculated from first principles
linear response linear-muffin-tin-orbital method in the generalized-gradient
approximation.... | 1007.3423v1 |
2010-08-11 | Contact resistivity and current flow path at metal/graphene contact | The contact properties between metal and graphene were examined. The
electrical measurement on a multiprobe device with different contact areas
revealed that the current flow preferentially entered graphene at the edge of
the contact metal. The analysis using the cross-bridge Kelvin structure (CBK)
suggested that a tra... | 1008.1826v1 |
2010-12-05 | Snake States in Graphene p-n Junctions | We investigate transport in locally-gated graphene devices, where carriers
are injected and collected along, rather than across, the gate edge. Tuning
densities into the p-n regime significantly reduces resistance along the p-n
interface, while resistance across the interface increases. This provides an
experimental si... | 1012.0959v2 |
2011-08-18 | Non-volatile Complementary Resistive Switch-based Content Addressable Memory | This paper presents a novel resistive-only Binary and Ternary Content
Addressable Memory (B/TCAM) cell that consists of two Complementary Resistive
Switches (CRSs). The operation of such a cell relies on a logic$\rightarrow$ON
state transition that enables this novel CRS application. | 1108.3716v2 |
2012-11-16 | Universal scaling of resistivity in bilayer graphene | We report the temperature dependent electrical transport properties of gated
bilayer graphene devices. We see a clear evidence of insulating behavior due to
electron-hole charge puddles. The electrical resistivity increases while the
mobility decreases with decreasing temperature, a characteristic due to carrier
inhomo... | 1211.3807v1 |
2013-04-15 | Many Topological Insulators Fail the Surface Conduction Test | In this report, we scrutinize the thickness dependent resistivity data from
the recent literature on electrical transport measurements in topological
insulators. A linear increase in resistivity with increase in thickness is
expected in the case of these materials since they have an insulating bulk and
conducting surfa... | 1304.4037v2 |
2014-04-14 | Giant generic topological Hall resistivity of MnSi under pressure | We report detailed low temperature magnetotransport and magnetization
measurements in MnSi under pressures up to $\sim12\,{\rm kbar}$. Tracking the
role of sample quality, pressure transmitter, and field and temperature history
allows us to link the emergence of a giant topological Hall resistivity
$\sim50\,{\rm n\Omeg... | 1404.3734v1 |
2015-01-27 | The Vacancy Effect on Thermal Interface Resistance between Aluminum and Silicon by Molecular Dynamics | Thermal transport across interfaces is an important issue for
microelectronics, photonics, and thermoelectric devices and has been studied
both experimentally and theoretically in the past. In this paper, thermal
interface resistance (1/G) between aluminum and silicon with nanoscale
vacancies was calculated using non-e... | 1501.06666v1 |
2015-03-12 | Comment on "Correlation between Bulk Thermodynamic Measurements and the Low-Temperature-Resistance Plateau in SmB6" | Low-temperature-resistivity plateau observed in $\rm SmB_6$ single
crystal,which is due to surface, not bulk, conduction has been confirmed from
electrical transport measurements. Recently, the correlation between bulk
thermodynamic measurements and the low-temperature-resistance plateau in $\rm
SmB_6$ have been invest... | 1503.03901v1 |
2015-05-14 | On the vanishing resistivity limit and the magnetic boundary-layers for one-dimensional compressible magnetohydrodynamics | We consider an initial-boundary value problem for the one-dimensional
equations of compressible isentropic viscous and non-resistive
magnetohydrodynamic flows. The global well-posedness of strong solutions with
general large data is established. Moreover, the vanishing resistivity limit is
justified and the thickness o... | 1505.03596v1 |
2017-02-06 | A thermodynamic theory of filamentary resistive switching | We present a phenomenological theory of filamentary resistive random access
memory (RRAM) describing the commonly observed features of their
current-voltage characteristics. Our approach follows the approach of
thermodynamic theory developed earlier for chalcogenide memory and threshold
switches and largely independent... | 1702.01480v1 |
2017-10-02 | Electrical resistivity across the tricriticality in itinerant ferromagnet | We investigate the discontinuous ferromagnetic phase diagram near tricritical
point in UCo 1-x Ru x Al compounds by electrical resistivity measurements.
Separation of phases in UCo 0.995 Ru 0.005 Al at ambient pressure and in UCo
0.990 Ru 0.010 Al at pressure of 0.2 GPa and disappearance of ferromagnetism at
0.4 GPa is... | 1710.00860v1 |
2017-10-04 | Towards Replacing Resistance Thermometry with Photonic Thermometry | Resistance thermometry provides a time-tested method for taking temperature
measurements that has been painstakingly developed over the last century.
However, fundamental limits to resistance-based approaches along with a desire
to reduce the cost of sensor ownership and increase sensor stability has
produced considera... | 1710.01704v1 |
2018-09-28 | Thermal resistance of GaN/AlN graded interfaces | Compositionally graded interfaces in power electronic devices eliminate
dislocations, but they can also decrease thermal conduction, leading to
overheating. We quantify the thermal resistances of GaN/AlN graded interfaces
of varying thickness using ab initio Green's functions, and compare them with
the abrupt interface... | 1809.11046v2 |
2017-03-08 | Resistive Switching in Memristive Electrochemical Metallization Devices | We report on resistive switching of memristive electrochemical metallization
devices using 3D kinetic Monte Carlo simulations describing the transport of
ions through a solid state electrolyte of an Ag/TiO$_{\text{x}}$/Pt thin layer
system. The ion transport model is consistently coupled with solvers for the
electric f... | 1703.02946v2 |
2012-01-31 | Magnetoresistance, noise properties and the Koshino-Taylor effect in the quasi-1D oxide KRu_4O_8 | The low temperature electronic and galvanomagnetic transport properties of
the low dimensional oxide KRu_4O_8 are experimentally considered. A quadratic
temperature variation of the resistivity is observed to be proportional to the
residual resistivity. It shows the role of inelastic electron scattering
against impurit... | 1201.6474v1 |
2022-07-12 | A Simple and Precise Way to Determine Electrical Resistivity of Isotropic Conductors: Simplifying the Four-Probe Method | COMSOL Multiphysics software is used to describe the behavior of the
electrical resistivity of several samples with rectangular shape typically used
in the Montgomery method. The simulation data obtained using four isotropic
conductors allowed us to understand in detail the behavior of the electric
potential and electr... | 2207.05863v1 |
2022-11-08 | Role of the annealing parameters on the resistance of indium tin oxide nanocrystalline films | The optical and electrical properties of films made of nanoparticles of
indium tin oxide (ITO) are widely studied because of the significance of this
material for transparent electrodes, smart windows, and nonlinear optics
components. In this work, a systematic study of the resistance in ITO
nanocrystalline films, as a... | 2211.04144v2 |
2023-11-16 | Measuring the Kapitza Resistance between a Passivated Semiconductor and Liquid Helium | In this paper, we describe an experimental investigation into the effect of
passivation layer thickness on heat dissipation between a quartz substrate and
liquid helium. We have observed that by depositing SiN from 0 to 240 nm, the
Kapitza resistance increases by 0.0365 m^2.K/W per nanometer more than for an
unpassivat... | 2312.03713v1 |
2021-07-26 | Laser-equipped gas reaction chamber for probing environmentally sensitive materials at near atomic scale | Numerous metallurgical and materials science applications depend on
quantitative atomic-scale characterizations of environmentally-sensitive
materials and their transient states. Studying the effect upon materials
subjected to thermochemical treatments in specific gaseous atmospheres is of
central importance for specif... | 2107.11987v2 |
2023-03-19 | 2D MXene Electrochemical Transistors | In the past two decades another transistor based on conducting polymers,
called the organic electrochemical transistor (ECT) was shown and largely
studied. The main difference between organic ECTs and FETs is the mode and
extent of channel doping: while in FETs the channel only has surface doping
through dipoles, the m... | 2303.10768v2 |
2016-02-10 | Electronic Evidence of Temperature-Induced Lifshitz Transition and Topological Nature in ZrTe5 | The topological materials have attracted much attention recently. While
three-dimensional topological insulators are becoming abundant, two-dimensional
topological insulators remain rare, particularly in natural materials. ZrTe5
has host a long-standing puzzle on its anomalous transport properties; its
underlying origi... | 1602.03576v1 |
2010-11-11 | Nonlinear Insulator in Complex Oxides | The insulating state is one of the most basic electronic phases in condensed
matter. This state is characterised by an energy gap for electronic excitations
that makes an insulator electrically inert at low energy. However, for complex
oxides, the very concept of an insulator must be re-examined. Complex oxides
behave ... | 1011.2629v1 |
2022-08-31 | CeFe$_2$Al$_{10}$: a Correlated Metal with a Fermi Surface Exhibiting Nonmetallic Conduction | Metals can be defined as materials with a Fermi surface or as materials
exhibiting metallic conduction (i.e., $\mathrm{d} \rho / \mathrm{d}T > 0$).
Usually, these definitions both hold at low temperatures, such as liquid-helium
temperatures, as the Fermi energy is sufficiently larger than the thermal
energy. However, t... | 2208.14630v4 |
2011-08-08 | KEK effort for high field magnets | KEK has emphasized efforts to develop the RHQNb3Al superconductor and a
sub-scale magnet reaching 13 T towards the HL-LHC upgrade in last years. In
addition, relevant R&D regarding radiation resistance has been carried out. For
higher field magnets beyond 15 T, HTS in combination with A15 superconductors
should be one ... | 1108.1626v1 |
2013-10-29 | Fabrication of single-walled carbon nanotube/Si heterojunction solar cell with high photovoltaic conversion efficiency and stability | The photovoltaic properties of carbon nanotube/Si heterojunction solar cells
were investigated using network films of high quality single-walled carbon
nanotubes (SWNTs) grown by atmospheric-pressure floating-catalyst chemical
vapor deposition. Because of the optimization of the device window size and the
utilization o... | 1310.7783v2 |
2021-02-15 | Fermi-surface reconstruction at the metamagnetic high-field transition in uranium mononitride | We report on the electronic and thermodynamic properties of the
antiferromagnetic metal uranium mononitride with a N\'eel temperature
$T_N\approx 53\,$K. The fabrication of microstructures from single crystals
enables us to study the low-temperature metamagnetic transition at
approximately $58\,$T by high-precision mag... | 2102.07512v2 |
2020-06-17 | Electrical transport measurements for superconducting sulfur hydrides using boron-doped diamond electrodes on beveled diamond anvil | A diamond anvil cell (DAC) which can generate extremely high pressure of
multi-megabar is promising tool to develop a further physics such a
high-transition temperature superconductivity. However, electrical transport
measurements, which is one of the most important properties of such functional
materials, using the DA... | 2006.09671v1 |
2023-10-02 | Thermoelectric properties of high-entropy wolframite oxide: (CoCuNiFeZn)$_{1-x}$Ga$_x$WO$_4$ | In this report, the synthesis of high-entropy wolframite oxide
(CoCuNiFeZn)$_{1-x}$Ga$_x$WO$_4$ through standard solid-state route followed by
spark plasma sintering (SPS) and their structural, microstructural, and
thermoelectric properties are investigated. X-ray diffraction pattern followed
by pattern matching refine... | 2310.00930v1 |
1999-03-01 | Anisotropic resistivity of the antiferromagnetic insulator Bi_2Sr_2ErCu_2O_8 | Anisotropic resistivities of Bi_2Sr_2Ca_{1-x}Er_xCu_2O_8 single crystals were
measured and analyzed from 4.2 to 500 K with special interest in the parent
antiferromagnetic insulator of x=1.0. Although the resistivity is
semiconducting along both the in- and out-of-plane directions, the temperature
dependence is found t... | 9903023v2 |
2002-11-18 | Transverse voltages and reciprocity theorem in magnetic fields for high T_c superconductors | We have tested four-point methods of the Hall effect measurement on BiSrCaCuO
(2223) polycrystal and also the validity of the magnetic field form of the
reciprocity theorem. We found that different types of determination of the Hall
resistance using various combination of measured resistances provide different
value of... | 0211370v1 |
2003-06-03 | Anomalous Flux Flow Resistivity in Two Gap Superconductor MgB_2 | The flux flow resistivity associated with purely viscous motion of vortices
in high-quality MgB_2 was measured by microwave surface impedance. Flux flow
resistivity exhibits unusual field dependence with strong enhancement at low
field, which is markedly different to conventional s-wave superconductors. A
crossover fie... | 0306057v1 |
2005-09-30 | Valence fluctuation mediated superconductivity in CeCu2Si2 | It has been proposed that there are two types of superconductivity in
CeCu2Si2, mediated by spin fluctuations at ambient pressure, and by critical
valence fluctuations around a charge instability at a pressure P_v \simeq 4.5
GPa. We present in detail some of the unusual features of this novel type of
superconducting st... | 0509787v1 |
2007-06-05 | Hall magnetoresistivity response under Microwave excitation revisited | We theoretically analyzed the microwave-induced modification of the Hall
magnetoresistivity in high mobility two-dimensional electron systems. These
systems present diagonal magnetoresistivity oscillations and zero-resistance
states when are subjected to microwave radiation. The most surprising
modification of the Hall... | 0706.0588v1 |
2009-06-22 | Temperature dependent electrical resistivity of a single strand of ferromagnetic single crystalline nanowire | We have measured the electrical resistivity of a single strand of a
ferromagnetic Ni nanowire of diameter 55 nm using a 4-probe method in the
temperature range 3 K-300 K. The wire used is chemically pure and is a high
quality oriented single crystalline sample in which the temperature independent
residual resistivity i... | 0906.3903v1 |
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