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2018-03-20
HPL-GEM: Controlling High Pressure Laminates bulk resistivity with GEMs
We succeeded in modifying and controlling the electrical resistance of a standard High Pressure Laminate (HPL) panel through the use of a Gas Electron Multiplier (GEM) foil that has been embedded into the bulk of the HPL plate itself. Electrical characterizations were made and preliminary data show that this HPL-GEM em...
1803.07675v1
2024-02-22
Auxiliary Calculations for Graphene-Based Quantum Hall Arrays Using Partially Recursive Star-Mesh Transformations
A previous mathematical approach adopted for optimizing the number of total device elements required for obtaining high effective quantized resistances in graphene-based quantum Hall array devices (QHARS) has been further explored with partial recursion patterns. Designs would assume the use of epitaxial graphene eleme...
2402.14520v1
2005-03-31
Tuning Negative Differential Resistance in a Molecular Film
We have observed tunable negative differential resistance (NDR) in scanning tunneling spectroscopy measurements of a double layer of C60 molecules on a metallic surface. Using a simple model we show that the observed NDR behavior is explained by voltage-dependent changes in the tunneling barrier height.
0503765v1
2006-10-10
Residual resistivity due to wedge disclination dipoles in metals with rotational plasticity
The residual resistivity $\rho $ in metals caused by wedge disclination dipoles is studied in the framework of the Drude formula. It is shown that $\rho\sim L^{-p}$ with $p=3$ for biaxial and $p=2$ for uniaxial dipoles ($L$ is a size of dipole arm)
0610258v1
2006-10-26
Two years later--lessons from vortex dynamics in super media
Two years ago the reasons for resistance to the fundamental vortex dynamics in super media emerged in 1990's were analyzed (cond-mat/0407007). Five "mistakes" were identified to explain this resistance. Given the current tremendous interest in vortex dynamics, it would be desirable to provide a progress report: A surve...
0610753v1
2008-12-16
Electrical properties of vanadium oxide subject to hydrogen plasma treatment
The effect of doping with hydrogen on the electrical properties of vanadium oxide is studied. For vanadium oxide films, subject to cold hydrogen plasma treatment, the temperature dependence of resistance with a maximum at T ~ 100 K is observed. Also, the dependence of the a.c. resistance on frequency is studied. A stra...
0812.2973v1
2011-02-07
Direct correlation between strengthening mechanisms and electrical noise in strained copper wires
We have measured the resistance noise of copper metallic wires during a tensile stress. The time variation of the main resistance is continuous up to the wire breakdown, but its fluctuations reveal the intermittent and heterogeneous character of plastic flow. We show in particular direct correlations between strengthen...
1102.1253v1
2011-09-05
Mesoscopic Thermovoltage Measurement Design
Quantitative thermoelectric measurements in the mesoscopic regime require accurate knowledge of temperature, thermovoltage, and device energy scales. We consider the effect of a finite load resistance on thermovoltage measurements of InAs/InP heterostructure nanowires. Load resistance and ac attenuation distort the mea...
1109.1009v1
2016-07-20
MegaOhm Extraordinary Hall effect in oxidized CoFeB
We report on development of controllably oxidized CoFeB ferromagnetic films demonstrating the extraordinary Hall effect (EHE) resistivity exceeding 1 Ohmcm and magnetic field sensitivity up to 10^6 Ohm/T. Such EHE resistivity is four orders of magnitude higher than previously observed in ferromagnetic materials, while ...
1607.05923v1
1995-12-18
Anisotropic Localization Effect in Layered Materials
We investigate localization properties in the highly anisotropic and intrinsically disordered layered material, which is analogous to high-Tc cuprates. By varying the anisotropy of the system which is parameterized by the interlayer hopping $tp$, we find a crossover from two-dimensional (2D) to three-dimensional (3D) b...
9512133v1
2008-03-20
Graphene-Based Liquid Crystal Device
Graphene is only one atom thick, optically transparent, chemically inert and an excellent conductor. These properties seem to make this material an excellent candidate for applications in various photonic devices that require conducting but transparent thin films. In this letter we demonstrate liquid crystal devices wi...
0803.3031v1
2008-10-02
Carrier doping to pseudo-low-dimensional compound La2RuO5
Hole carrier doping has been tried to pseudo-low-dimensional material La2RuO5 by substituting La3+ with Cd2+. Single phased samples of La2-xCdxRuO5 with x up to 0.5 have been successfully obtained and also high pressure O2 annealing has been performed to the x=0.5 sample. Although the formal ionic state of Ru is expect...
0810.0350v1
2008-12-15
High-temperature oxygen non-stoichiometry, conductivity and structure in strontium-rich nickelates La2-xSrxNiO4-δ(x = 1 and 1.4)
Oxygen nonstoichiometry, electrical conductivity and thermal expansion of La2 xSrxNiO4-\delta phases with high levels of strontium substitution (1 =< x =< 1.4) have been investigated in air and oxygen atmosphere in the temperature range 20-1050 degrees C. These phases retain the K2NiF4-type structure of La2NiO4 (tetrag...
0812.2747v1
2009-12-08
The Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering
We demonstrate the atomic layer deposition of high-quality HfO2 film on graphene and report the magnitude of remote oxide phonon (ROP) scattering in dual-oxide graphene transistors. Top gates with 30 nm HfO2 oxide layer exhibit excellent doping capacity of greater than 1.5x10^(13)/cm^(2). The carrier mobility in HfO2-c...
0912.1378v2
2013-12-21
Near-Field Microwave Magnetic Nanoscopy of Superconducting Radio Frequency Cavity Materials
A localized measurement of the RF critical field on superconducting radio frequency (SRF) cavity materials is a key step to identify specific defects that produce quenches of SRF cavities. Two new measurements are performed to demonstrate these capabilities with a novel near-field scanning probe microwave microscope. T...
1312.6257v1
2014-11-14
Characterization of TiAlSiON Coatings Deposited by Plasma Enhanced Magnetron Sputtering: XRD, XPS, and DFT Studies
The results of characterization of TiAlSiON hard coatings deposited on ferric-chromium AISI 430 stainless steel by plasma enhanced magnetron sputtering are presented. The coating with maximum hardness (of 45 GPa) was obtained at the following optimal values of elemental concentrations: Si ~5 at.%, Al ~15 at.%, and Ti ~...
1411.3859v1
2015-05-25
Cluster spin-glass ground state in quasi-one-dimensional KCr$_{3}$As$_{3}$
We report structural and physical properties of a new quasi-one-dimensional Cr-based compound, KCr$_{3}$As$_{3}$, which is prepared by potassium deintercalation from the superconductive K$_{2}$Cr$_{3}$As$_{3}$. KCr$_{3}$As$_{3}$ adopts the TlFe$_{3}$Te$_{3}$-type structure with space group $P6_{3}$/$m$ (No. 176). The h...
1505.06525v1
2017-12-29
Structural transformations in porous glasses under mechanical loading. II. Compression
The role of porous structure and glass density in response to compressive deformation of amorphous materials is investigated via molecular dynamics simulations. The disordered, porous structures were prepared by quenching a high-temperature binary mixture below the glass transition into the phase coexistence region. Wi...
1712.10265v1
2018-02-07
Stability of boron-doped graphene/copper interface: DFT, XPS and OSEE studies
Two different types of boron-doped graphene/copper interfaces synthesized using two different flow rates of Ar through the bubbler containing the boron source were studied. X-ray photoelectron spectra (XPS) and optically stimulated electron emission (OSEE) measurements have demonstrated that boron-doped graphene coatin...
1802.02345v1
2018-06-11
Uncovering electron scattering mechanisms in NiFeCoCrMn derived concentrated solid solution and high entropy alloys
Whilst it has long been known that disorder profoundly affects transport properties, recent measurements on a series of solid solution 3d-transition metal alloys reveal two orders of magnitude variations in the residual resistivity. Using ab-initio methods, we demonstrate that, while the carrier density of all alloys i...
1806.03785v2
2018-11-26
Engineering Large Anisotropic Magnetoresistance in La0.7Sr0.3MnO3 Films at Room Temperature
The magnetoresistance (MR) effect is widely employed in technologies that pervade our world from magnetic reading heads to sensors. Diverse contributions to MR, such as anisotropic, giant, tunnel, colossal, and spin-Hall, are revealed in materials depending on the specific system and measuring configuration. Half-metal...
1811.10301v1
2017-03-23
Unconventional Large Linear Magnetoresistance in Cu$_{2-x}$Te
We report a large linear magnetoresistance in Cu$_{2-x}$Te, reaching $\Delta\rho/\rho(0)$ = 250\% at 2 K in a 9 T field. This is observed for samples with $x$ in the range 0.13 to 0.22, and the results are comparable to the effects observed in Ag$_2 X$ materials, although in this case the results appear for a much wide...
1703.07945v1
2019-02-14
One-dimensional edge contacts to a monolayer semiconductor
Integration of electrical contacts into van der Waals (vdW) heterostructures is critical for realizing electronic and optoelectronic functionalities. However, to date no scalable methodology for gaining electrical access to buried monolayer two-dimensional (2D) semiconductors exists. Here we report viable edge contact ...
1902.05506v3
2019-02-20
Vortex pinning and flux flow microwave studies of coated conductors
Demanding microwave applications in a magnetic field require the material optimization not only in zero-field but, more important, in the in-field flux motion dominated regime. However, the effect of artificial pinning centers (APC) remains unclear at high frequency. Moreover, in coated conductors the evaluation of the...
1902.07589v1
2020-02-25
Shear thickening and jamming of dense suspensions: the "roll" of friction
Particle-based simulations of discontinuous shear thickening (DST) and shear jamming (SJ) suspensions are used to study the role of stress-activated constraints, with an emphasis on resistance to gear-like rolling. Rolling friction decreases the volume fraction required for DST and SJ, in quantitative agreement with re...
2002.10996v2
2020-09-16
Superconductivity in CuAl2-type Co0.2Ni0.1Cu0.1Rh0.3Ir0.3Zr2 with a high-entropy-alloy transition metal site
Research on high-entropy-alloy (HEA) superconductors is a growing field in material science. In this study, we explored new HEA-type superconductors and discovered a CuAl2-type superconductor Co0.2Ni0.1Cu0.1Rh0.3Ir0.3Zr2 with a HEA-type transition metal site. A superconducting transition was observed at 8.0 K after ele...
2009.07548v3
2017-05-17
High Thermoelectric Figure of Merit by Resonant Dopant in Half-Heusler Alloys
Half-Heusler alloys have been one of the benchmark high temperature thermoelectric materials owing to their thermal stability and promising figure of merit ZT. Simonson et al. early showed that small amounts of vanadium doped in Hf0.75Zr0.25NiSn enhanced the Seebeck coefficient and correlated the change with the increa...
1705.06100v1
2019-03-12
Superconductivity behavior in epitaxial TiN films points at surface magnetic disorder
We analyze the evolution of the normal and superconducting electronic properties in epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of in the residual resistivity, which becomes dominated by diffusive s...
1903.05009v3
2019-12-30
Pinning Dislocations in Colloidal Crystals with Active Particles that Seek Stacking Faults
There is growing interest in functional, adaptive devices built from colloidal subunits of micron size or smaller. A colloidal material with dynamic mechanical properties could facilitate such microrobotic machines. Here we study via computer simulation how active interstitial particles in small quantities can be used ...
1912.12792v1
2015-06-16
Correlation of Crystal Quality and Extreme Magnetoresistance of WTe$_2$
High quality single crystals of WTe$_2$ were grown using a Te flux followed by a cleaning step involving self-vapor transport. The method is reproducible and yields consistently higher quality single crystals than are typically obtained via halide assisted vapor transport methods. Magnetoresistance (MR)values at 9 Tesl...
1506.04823v1
2018-12-18
The role of β-titanium ligaments in the deformation of dual phase titanium alloys
Multiphase titanium alloys are critical materials in high value engineering components, for instance in aero engines. Microstructural complexity is exploited through interface engineering during mechanical processing to realise significant improvements in fatigue and fracture resistance and strength. In this work, we e...
1812.07250v2
2019-10-14
Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors
In this study the MOCVD growth and electrical properties of N-polar modulation doped p-AlGaN/GaN superlattices (SLs) were investigated. Hole sheet charge density and mobility were studied as a function of the concentration of the p-type dopant Mg in the SL and the number of SL periods. Room temperature Hall measurement...
1910.06421v1
2019-11-27
Enhancement of the electronic thermoelectric properties of bulk strained silicon-germanium alloys using the scattering relaxation times from first principles
We use first-principles electronic structure methods to calculate the electronic thermoelectric properties (i.e. due to electronic transport only) of single-crystalline bulk $n$-type silicon-germanium alloys vs Ge composition, temperature, doping concentration and strain. We find excellent agreement to available experi...
1911.12149v1
2020-10-01
High magnetic field spin-valley-split Shubnikov-de Haas oscillations in a WSe$_2$ monolayer
We study Shubnikov-de Haas oscillations in a p-type WSe$_2$ monolayer under very high magnetic field. The oscillation pattern is complex due to a large spin and valley splitting, in the non-fully-resolved Landau level regime. Our experimental data can be reproduced with a model in which the main parameter is the ratio ...
2010.00510v1
2020-11-27
High-pressure effects on superconducting properties and crystal structure of Bi-based layered superconductor La2O2Bi3Ag0.6Sn0.4S6
The effects of pressure on the superconducting properties of a Bi-based layered superconductor La2O2Bi3Ag0.6Sn0.4S6, which possesses a four-layer-type conducting layer, have been studied through the electrical resistance and magnetic susceptibility measurements. The crystal structure under pressure was examined using s...
2011.13532v1
2021-02-01
Liquefaction-induced Plasticity from Entropy-boosted Amorphous Ceramics
Ceramics are easy to break, and very few generic mechanisms are available for improving their mechanical properties, e.g., the 1975-discovered anti-fracture mechanism is strictly limited to zirconia and hafnia. Here we report a general mechanism for achieving high plasticity through liquefaction of ceramics. We further...
2102.00802v1
2021-02-13
Mechanical Performance of 3D Printed Interpenetrating Phase Composites with Spinodal Topologies
The mechanical response of interpenetrating phase composites (IPCs) with stochastic spinodal topologies is investigated experimentally and numerically. Model polymeric systems are fabricated by Polyjet multi-material printing, with the reinforcing phase taking the topology of a spinodal shell, and the remaining volume ...
2102.06707v1
2021-07-22
Anomalous High-Field Magnetotransport in CaFeAsF due to the Quantum Hall Effect
CaFeAsF is an iron-based superconductor parent compound whose Fermi surface is quasi-two dimensional, composed of Dirac-electron and Schr\"odinger-hole cylinders elongated along the $c$ axis. We measured the longitudinal and Hall resistivities in CaFeAsF with the electrical current in the $ab$ plane in magnetic fields ...
2107.10460v4
2022-01-08
Atomic disorder and Berry phase driven anomalous Hall effect in Co2FeAl Heusler compound
Co2-based Heusler compounds are the promising materials for the spintronics application due to their high Curie temperature, large spin-polarization, large magnetization density, and exotic transport properties. In the present manuscript, we report the anomalous Hall effect (AHE) in a polycrystalline Co2FeAl Heusler co...
2201.02864v1
2022-07-15
High power density energy harvesting devices based on the anomalous Nernst effect of Co/Pt magnetic multilayers
The anomalous Nernst effect (ANE) is a thermomagnetic phenomenon with potential applications in thermal energy harvesting. While many recent works studied the approaches to increase the ANE coefficient of materials, relatively little effort was devoted to increasing the power supplied by the effect. Here we demonstrate...
2207.07526v2
2023-02-20
A High Throughput Aqueous Passivation Testing Methodology for Compositionally Complex Alloys using Scanning Droplet Cell
Compositionally complex alloy systems containing more than five principal elements allow exploring a wide range of compositions, processing, and structural variables with the hope for identifying unique properties. Such opportunities also apply to designing materials for improved corrosion resistance, regulated by a se...
2302.09804v4
2023-09-29
Transforming Materials Discovery for Artificial Photosynthesis: High-Throughput Screening of Earth-Abundant Semiconductors
We present a highly efficient workflow for designing semiconductor structures with specific physical properties, which can be utilized for a range of applications, including photocatalytic water splitting. Our algorithm generates candidate structures composed of earth-abundant elements that exhibit optimal light-trappi...
2310.00118v1
2023-10-28
Ultralong-term high-density data storage with atomic defects in SiC
There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far bey...
2310.18843v1
2003-04-30
Pulsed Laser Deposition of epitaxial titanium diboride thin films
Epitaxial titanium diboride thin films have been deposited on sapphire substrates by Pulsed Laser Ablation technique. Structural properties of the films have been studied during the growth by Reflection High Energy Electron Diffraction (RHEED) and ex-situ by means of X-ray diffraction techniques; both kinds of measurem...
0304680v1
2016-02-19
Magnetic anisotropy of large floating-zone-grown single-crystals of SrRuO3
SrRuO3 is a highly interesting material due to its anomalous-metal properties related with ferromagnetism and its relevance as conductive perovskite layer or substrate in heterostructure devices. We have used optical floating zone technique in an infrared image furnace to grow large single crystals of SrRuO3 with volum...
1602.06171v2
2014-08-11
High spin polarization in CoFeMnGe quaternary Heusler alloy
We report the structure, magnetic property and spin polarization of CoFeMnGe equiatomic quaternary Heusler alloy. The alloy was found to exist in the L21 structure with considerable amount of DO3 disorder. Thermal analysis result indicated the Curie temperature is about 711K without any other phase transformation up to...
1408.2408v2
2019-04-01
Quantum transport in high-quality shallow InSb quantum wells
InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensional systems, thin barriers are needed to allow strong coupling between superconductors and semiconductors. However, it is still challenging...
1904.00828v2
2021-06-28
Topological Anderson Insulator in cation-disordered Cu2ZnSnS4
Abstract: Using ab initio calculations supported by experimental transport measurements, we present the first credible candidate for the realization of a disorder-induced Topological Anderson Insulator in a real material system. High energy reactive ball-milling produces a polymorph of Cu2ZnSnS4 with high cation disord...
2106.14714v1
2023-12-11
Impersonating a Superconductor: High-Pressure BaCoO$_3$, an Insulating Ferromagnet
We report the high-pressure synthesis (6 GPa, 1200 $^{\circ}$C) and ambient pressure characterization of hexagonal HP-BaCoO$_3$. The material (with the 2H crystal structure) has a short intrachain Co-Co distance of about 2.07 $\text{\r{A}}$. Our magnetization investigation revealed robust diamagnetic behavior below app...
2312.14955v1
2022-10-03
The impact of resistive electric fields on particle acceleration in reconnection layers
In the context of particle acceleration in high-energy astrophysical environments featuring magnetic reconnection, the importance of the resistive term of the electric field compared to the convective one is still under debate. In this work, we present a quantitative analysis through 2D magnetohydrodynamic numerical si...
2210.01113v1
2024-01-31
Investigation of Microstructure and Corrosion Resistance of Ti-Al-V Titanium Alloys Obtained by Spark Plasma Sintering
The research results of the microstructure and corrosion resistance of Ti and Ti-Al-V Russian industrial titanium alloys obtained by spark plasma sintering (SPS) are described. Investigations of the microstructure, phase composition, hardness, tensile strength, electrochemical corrosion resistance and hot salt corrosio...
2401.17941v1
2003-02-01
High-Temperature Hall Effect in Ga(1-x)Mn(x)As
The temperature dependence of the Hall coefficient of a series of ferromagnetic Ga(1-x)Mn(x)As samples is measured in the temperature range 80K < T < 500K. We model the Hall coefficient assuming a magnetic susceptibility given by the Curie-Weiss law, a spontaneous Hall coefficient proportional to rho_xx^2(T), and inclu...
0302013v2
2007-06-15
Growth mechanisms and structure of fullerene-like carbon-based thin films: superelastic materials for tribological applications
In this chapter we review our findings on the bonding structure and growth mechanisms of carbon-based thin solid films with fullerene-like (FL) microstructure. The so-called FL arrangements arise from the curvature and cross-linking of basal planes in graphitic-like structures, partially resembling that of molecular fu...
0706.2258v1
2013-07-08
Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach
It has been demonstrated that InSb nanoinclusions, which are formed in situ, can simultaneously improve all three individual thermoelectric properties of the n-type half Heusler compound (Ti,Zr,Hf)(Co,Ni)Sb [Xie et al., Acta Mater. 58, 4795 (2010)]. In the work presented herein, we have adopted the same approach to the...
1307.2160v1
2018-06-21
Planar Hall effect in type II Dirac semimetal VAl$_{3}$
The study of electronic properties in topological systems is one of the most fascinating topics in condensed matter physics, which has generated enormous interests in recent times. New materials are frequently being proposed and investigated to identify their non-trivial band structure. While sophisticated techniques s...
1806.08287v1
2017-08-17
Separation of Electron and Hole Dynamics in the Semimetal LaSb
We report investigations on the magnetotransport in LaSb, which exhibits extremely large magnetoresistance (XMR). Foremost, we demonstrate that the resistivity plateau can be explained without invoking topological protection. We then determine the Fermi surface from Shubnikov - de Haas (SdH) quantum oscillation measure...
1708.05416v2
2019-01-21
Solid-State Thermal Energy Storage Using Reversible Martensitic Transformations
The identification and use of reversible Martensitic transformations, typically described as shape memory transformations, as a new class of solid-solid phase change material is experimentally demonstrated here for the first time. To prove this claim, time-domain thermoreflectance, frequency-domain thermoreflectance, a...
1901.06990v1
2020-11-30
Discovery of carbon-based strongest and hardest amorphous material
Carbon is likely the most fascinating element of the periodic table because of the diversity of its allotropes stemming from its variable (sp, sp2, and sp3) bonding motifs. Exploration of new forms of carbon has been an eternal theme of contemporary scientific research. Here we report on novel amorphous carbon phases c...
2011.14819v2
2021-12-20
Ultrafast Multi-Shot Ablation and Defect Generation in Monolayer Transition Metal Dichalcogenides
Transition metal dichalcogenides are known to possess large optical nonlinearities and driving these materials at high intensities is desirable for many applications. Understanding their optical responses under repetitive intense excitation is essential to improve the performance limit of these strong-field devices and...
2112.10743v1
2024-03-19
Electrical transport crossover and large magnetoresistance in selenium deficient van der Waals HfSe2-x
Transition metal dichalcogenides have received much attention in the past decade not only due to the new fundamental physics, but also due to the emergent applications in these materials. Currently chalcogenide deficiencies in TMDs are commonly believed either during the high temperature growth procedure or in the nano...
2403.12430v1
2018-09-27
Granular aluminum: A superconducting material for high impedance quantum circuits
Superconducting quantum information processing machines are predominantly based on microwave circuits with relatively low characteristic impedance, of about 100 Ohm, and small anharmonicity, which can limit their coherence and logic gate fidelity. A promising alternative are circuits based on so-called superinductors, ...
1809.10646v1
2012-11-29
Effects of Resistivity on Magnetized Core-Collapse Supernovae
We studied roles of a turbulent resistivity in the core-collapse of a strongly magnetized massive star, carrying out 2D-resistive-MHD simulations. The three cases with different initial strengths of magnetic field and rotation are investigated; 1. strongly magnetized rotating core; 2.moderately magnetized rotating core...
1211.6817v2
2019-04-18
Scaling-up atomically thin coplanar semiconductor-metal circuitry via phase engineered chemical assembly
Two-dimensional (2D) layered semiconductors, with their ultimate atomic thickness, have shown promise to scale down transistors for modern integrated circuitry. However, the electrical contacts that connect these materials with external bulky metals are usually unsatisfactory, which limits the transistor performance. R...
1904.08545v1
2023-09-27
High-Resolution Full-field Structural Microscopy of the Voltage Induced Filament Formation in Neuromorphic Devices
Neuromorphic functionalities in memristive devices are commonly associated with the ability to electrically create local conductive pathways by resistive switching. The archetypal correlated material, VO2, has been intensively studied for its complex electronic and structural phase transition as well as its filament fo...
2309.15712v1
2020-12-23
Separated transport relaxation scales and interband scattering in SrRuO$_3$, CaRuO$_3$, and Sr$_2$RuO$_4$ thin films
The anomalous charge transport observed in some strongly correlated metals raises questions as to the universal applicability of Landau Fermi liquid theory. The coherence temperature $T_{FL}$ for normal metals is usually taken to be the temperature below which $T^2$ is observed in the resistivity. Below this temperatur...
2012.12800v1
2016-05-09
An analytical model for the influence of contact resistance on thermoelectric efficiency
An analytical model is presented that can account for both electrical and hot and cold thermal contact resistances when calculating the efficiency of a thermoelectric generator. The model is compared to a numerical model of a thermoelectric leg, for 16 different thermoelectric materials, as well as the analytical model...
1605.03565v1
2017-12-22
Magnetoresistance in YBi and LuBi semimetals due to nearly perfect carrier compensation
Monobismuthides of yttrium and lutetium are shown as new representatives of materials which exhibit extreme magnetoresistance and magnetic-field-induced resistivity plateau. At low temperatures and in magnetic field of 9T the magnetoresistance attains the order of magnitude of 10,000% and 1,000%, on YBi and LuBi, respe...
1712.08433v3
2020-05-07
Origin of the Significant Impact of Ta on the Creep Resistance of FeCrNi Alloys
Heat resistant FeCrNi alloys are widely used in the petrochemical industry because they exhibit a unique combination of creep and oxidation resistance at temperatures exceeding 900$^\circ$C. Their creep properties are often optimized by micro-additions of carbide forming elements. In the present work, the influence of ...
2005.03309v1
2022-10-07
Radiation-resistant aluminium alloy for space missions in the extreme environment of the solar system
Future human-based exploration of our solar system requires the invention of materials that can resist harsh environments. Age-hardenable aluminium alloys would be attractive candidates for structural components in long-distance spacecrafts, but their radiation resistance to solar energetic particles is insufficient. C...
2210.03397v3
2022-11-22
Optical properties and corrosion resistance of Ti2AlC, Ti3AlC2, and Cr2AlC as candidates for Concentrated Solar Power receivers
New generation concentrated solar power (CSP) plants require new solar receiver materials with selective optical properties and excellent corrosion resistance against molten salts. MAX phases are promising materials for CSP applications due to their optical properties and resistance to thermal shocks. Herein, we report...
2211.12251v2
2020-01-16
Social Engineering Resistant 2FA
Attackers increasingly, and with high success rates, use social engineering techniques to circumvent second factor authentication (2FA) technologies, compromise user accounts and sidestep fraud detection technologies. We introduce a social engineering resistant approach that we term device-aware 2FA, to replace the use...
2001.06075v1
2019-01-12
Surface impedance measurements on Nb$_{3}$Sn at high magnetic fields
Nb$_{3}$Sn is a superconductor of great relevance for perspective RF applications. We present for the first time surface impedance $Z_s$ measurements at 15 GHz and low RF field amplitude on Nb$_{3}$Sn in high magnetic fields up to 12 T, with the aim of increasing the knowledge of Nb$_{3}$Sn behavior in such conditions....
1901.03819v1
2020-08-25
Observation of High Harmonics of the Cyclotron Resonance in Microwave Transmission of a High-Mobility Two-Dimensional Electron System
We report an observation of magnetooscillations of the microwave power transmitted through the high mobility two-dimensional electron system hosted by a GaAs quantum well. The oscillations reflect an enhanced absorption of radiation at high harmonics of the cyclotron resonance and follow simultaneously measured microwa...
2008.11114v1
2021-09-20
Giant anomalous Nernst signal in the antiferromagnet YbMnBi2
Searching for a high anomalous Nernst effect (ANE) is crucial for thermoelectric energy conversion applications because the associated unique transverse geometry facilitates module fabrication. Topological ferromagnets with large Berry curvatures show high ANEs; however, they face drawbacks such as strong magnetic dist...
2109.09382v1
2022-02-09
Low energy switching of phase change materials using a 2D thermal boundary layer
The switchable optical and electrical properties of phase change materials (PCMs) are finding new applications beyond data storage in reconfigurable photonic devices. However, high power heat pulses are needed to melt-quench the material from crystalline to amorphous. This is especially true in silicon photonics, where...
2202.04699v1
2008-06-27
Electron pockets in the Fermi surface of hole-doped high-Tc superconductors
High-temperature superconductivity occurs as copper oxides are chemically tuned to have a carrier concentration intermediate between their metallic state at high doping and their insulating state at zero doping. The underlying evolution of the electron system in the absence of superconductivity is still unclear and a q...
0806.4621v1
2008-11-19
Elucidation of the origins of HTSC transport behaviour and quantum oscillations
A detailed exposition is made of recent transport and 'quantum oscillation' results from HTSC systems covering the full range from overdoped to underdoped material. This now very extensive and high quality data set is interpreted here within the framework developed by the author of local pairs and boson-fermion resonan...
0811.3096v2
2011-11-04
Local Structure of the Superconductor K0.8Fe1.6+xSe2: Evidence of Large Structural Disorder
The local structure of superconducting single crystals of K0.8Fe1.6+xSe2 with Tc = 32.6 K was studied by x-ray absorption spectroscopy. Near-edge spectra reveal that the average valence of Fe is 2+. The room temperature structure about the Fe, K and Se sites was examined by iron, selenium and potassium K-edge measureme...
1111.1026v1
2017-02-14
Pressure-induced metallization and superconducting phase in ReS2
Among the family of TMDs, ReS2 takes a special position, which crystalizes in a unique distorted low-symmetry structure at ambient conditions. The interlayer interaction in ReS2 is rather weak, thus its bulk properties are similar to that of monolayer. However, how does compression change its structure and electronic p...
1702.04061v1
2018-05-04
Silicon Oxide Electron-Emitting Nanodiodes
Electrically driven on-chip electron sources that do not need to be heated have been long pursued because the current thermionic electron sources show the problems of high power consumption, slow temporal response, bulky size, etc., but their realization remains challenging. Here we show that a nanogap formed by two el...
1805.01602v1
2019-11-04
Enhanced upper critical field in Co-doped Ba122 superconductors by lattice defect tuning
Nanoscale defects in superconductors play a dominant role in enhancing superconducting properties through electron scattering, modulation of coherence length, and correlation with quantized magnetic flux. For iron-based superconductors (IBSCs) that are expected to be employed in high-field magnetic applications, a fund...
1911.01080v1
2019-11-07
Chemical manipulation of hydrogen induced high p-type and n-type conductivity in Ga2O3
Advancement of optoelectronic and high-power devices is tied to the development of wide band gap materials with excellent transport properties. However, bipolar doping (n-type and p-type doping) and realizing high carrier density while maintaining good mobility have been big challenges in wide band gap materials. Here ...
1911.02717v1
2021-03-01
Absence of magnetic evidence for superconductivity in hydrides under high pressure
It is generally believed that magnetization measurements on sulfur hydride under high pressure performed in 2015 [1] provided "final convincing evidence of superconductivity" [2] in that material, in agreement with theoretical predictions [3,4]. Supported by this precedent, drops in resistance that were later observed ...
2103.00701v3
2021-08-15
High power Figure-of-Merit, 10.6-kV AlGaN/GaN lateral Schottky barrier diode with single channel and sub-100-μm anode-to-cathode spacing
GaN-based lateral Schottky diodes (SBDs) have attracted great attention for high-power applications due to its combined high electron mobility and large critical breakdown field. However, the breakdown voltage (BV) of the SBDs are far from exploiting the material advantages of GaN at present, limiting the desire to use...
2108.06679v1
2023-11-14
A New Look at Calcium Digermanide CaGe$_2$: A High-Performing Semimetal Transparent Conducting Material for Ge Optoelectronics
Following a recently manifested guide of how to team up infrared transparency and high electrical conductivity within semimetal materials [C. Cui $et$ $al.$ Prog. Mater. Sci. 2023, 136, 101112], we evaluate an applicability of the calcium digermanide (CaGe$_2$) thin film electrodes for the advanced Ge-based optical dev...
2311.07903v1
2023-12-14
Unlocking High Performance, Ultra-Low Power Van der Waals Transistors: Towards Back-End-of-Line In-Sensor Machine Vision Applications
Recent reports on machine learning (ML) and machine vision (MV) devices have demonstrated the potentials of 2D materials and devices. Yet, scalable 2D devices are being challenged by contact resistance and Fermi Level Pinning (FLP), power consumption, and low-cost CMOS compatible lithography processes. To enable CMOS+2...
2312.08634v1
2006-08-31
Systematic study of disorder induced by neutron irradiation in MgB2 thin films
The effects of neutron irradiation on normal state and superconducting properties of epitaxial magnesium diboride thin films are studied up to fluences of 1020 cm-2. All the properties of the films change systematically upon irradiation. Critical temperature is suppressed and, at the highest fluence, no superconducting...
0608706v2
2001-11-30
Effects of Bulk and Surface Conductivity on the Performance of CdZnTe Pixel Detectors
We studied the effects of bulk and surface conductivity on the performance of high-resistivity CdZnTe (CZT) pixel detectors with Pt contacts. We emphasize the difference in mechanisms of the bulk and surface conductivity as indicated by their different temperature behaviors. In addition, the existence of a thin (10-100...
0112001v1
2008-10-23
Thermopower across the pseudogap critical point of La(1.6-x)Nd(0.4)Sr(x)CuO(4): Evidence for a quantum critical point in a hole-doped high-Tc superconductor
The thermopower S of the high-Tc superconductor La(1.6-x)Nd(0.4)Sr(x)CuO(4) was measured as a function of temperature T near its pseudogap critical point, the critical hole doping p* where the pseudogap temperature T* goes to zero. Just above p*, S/T varies as ln(1/T) over a decade of temperature. Below p*, S/T undergo...
0810.4280v2
2009-09-23
Zooming on the Quantum Critical Point in Nd-LSCO
Recent studies of the high-Tc superconductor La_(1.6-x)Nd_(0.4)Sr_(x)CuO_(4) (Nd-LSCO) have found a linear-T in-plane resistivity rho_(ab) and a logarithmic temperature dependence of the thermopower S / T at a hole doping p = 0.24, and a Fermi-surface reconstruction just below p = 0.24 [1, 2]. These are typical signatu...
0909.4218v1
2009-12-30
30 inch Roll-Based Production of High-Quality Graphene Films for Flexible Transparent Electrodes
We report that 30-inch scale multiple roll-to-roll transfer and wet chemical doping considerably enhance the electrical properties of the graphene films grown on roll-type Cu substrates by chemical vapor deposition. The resulting graphene films shows a sheet resistance as low as ~30 Ohm/sq at ~90 % transparency which i...
0912.5485v3
2013-10-03
Aharonov-Bohm resistance magneto-oscillations on single-nanohole graphite and graphene structures
Graphene is a stable single atomic layer material exhibiting two-dimensional electron gas of massless Dirac fermions of high mobility. One of the intriguing properties of graphene is a possibility of realization of the Tamm-type edge states. These states differ from the usual surface states caused by defects, impuritie...
1310.0991v1
2014-02-27
Spin-charge interplay in antiferromagnetic La$_{2-x}$Sr$_{x}$CuO$_{4}$ studied by the muons, neutrons, and ARPES techniques
Exploring whether a spin density wave (SDW) is responsible for the charge excitations gap in the high-temperature superconducting cuprates is difficult, since the region of the phase diagram where the magnetic properties are clearly exposed is different from the region where the band dispersion is visible. On the one h...
1402.6936v1
2014-05-21
High Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
We report the fabrication of both n-type and p-type WSe2 field effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts. Our transport measurements reveal intrinsic channel properties including a metal-insulator transition at a characteristic conductivity close t...
1405.5437v1
2015-01-07
Angle dependence of the orbital magnetoresistance in bismuth
We present an extensive study of angle-dependent transverse magnetoresistance in bismuth, with a magnetic field perpendicular to the applied electric current and rotating in three distinct crystallographic planes. The observed angular oscillations are confronted with the expectations of semi-classic transport theory fo...
1501.01584v2
2015-02-26
First principles design of divacancy defected graphene nanoribbon based rectifying and negative differential resistance device
We have elaborately studied the electronic structure of 555-777 divacancy (DV) defected armchair edged graphene nanoribbon (AGNR) and transport properties of AGNR based two-terminal device constructed with one defected electrode and one N doped electrode, by using density functional theory and non-equilibrium Green's f...
1502.07465v1
2016-06-07
Superconductivity and Charge Density Wave in ZrTe$_{3-x}$Se$_{x}$
Charge density wave (CDW), the periodic modulation of the electronic charge density, will open a gap on the Fermi surface that commonly leads to decreased or vanishing conductivity. On the other hand superconductivity, a commonly believed competing order, features a Fermi surface gap that results in infinite conductivi...
1606.02284v1
2016-07-15
Effect of interface on mid-infrared photothermal response of MoS2 thin film grown by pulsed laser deposition
Here we report mid infrared (mid-IR) photothermal response of multi layer MoS2 thin film grown on crystalline (p-type silicon and c-axis oriented single crystal sapphire) and amorphous substrates (Si/SiO2 and Si/SiN) by pulsed laser deposition (PLD) technique. The photothermal response of the MoS2 films was measured as...
1607.04682v1
2016-11-10
Pressure-induced quantum phase transition in the itinerant ferromagnet UCoGa
In this paper, we report the results of a high pressure study of the itinerant 5f-electron ferromagnet UCoGa. The work is focused on probing the expected ferromagnet-to-paramagnet quantum phase transition induced by high pressure and on the general features of the P-T(-H) phase diagram. Diamond anvil cells were employe...
1611.03276v1
2016-11-14
Two-carrier analyses of the transport properties of black phosphorus under pressure
We report on the electronic transport properties of black phosphorus and analyze them using a two-carrier model in a wide range of pressure up to 2.5 GPa. In semiconducting state at 0.29 GPa, the remarkable non-linear behavior in the Hall resistance is reasonably reproduced by assuming the coexistence of two kinds of h...
1611.04277v2