publicationDate stringlengths 10 10 | title stringlengths 17 233 | abstract stringlengths 20 3.22k | id stringlengths 9 12 |
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2012-05-15 | Field-induced high coercive ferromagnetic state and magnetoresistance in the antiferromagnetically ordered compound Fe0.5TiS2 | The measurements of the magnetic susceptibility, magnetization, electrical
resistivity and magnetoresistance have been performed for the Fe intercalated
compound Fe0.5TiS2. According to X-ray diffraction measurements the Fe0.5TiS2
compound synthesized in the present work has a monoclinic crystal structure
(space group ... | 1205.3242v1 |
2012-05-16 | A new approach for improving global critical current density in Fe(Se0.5Te0.5) polycrystalline materials | A novel method to prepare bulk Fe(Se0.5Te0.5) samples is presented, based on
a melting process and a subsequent annealing treatment. With respect to the
standard sintering technique, it produces much more homogeneous and denser
samples, characterized by large and well interconnected grains. The resulting
samples exhibi... | 1205.3618v2 |
2012-05-29 | Transformation Electronics: Tailoring Electron's Effective Mass | The speed of integrated circuits is ultimately limited by the mobility of
electrons or holes, which depend on the effective mass in a semiconductor.
Here, building on an analogy with electromagnetic metamaterials and
transformation optics, we describe a new transport regime in a semiconductor
superlattice characterized... | 1205.6325v2 |
2012-07-13 | Association of indigo with zeolites for improved colour stabilization | The durability of an organic colour and its resistance against external
chemical agents and exposure to light can be significantly enhanced by
hybridizing the natural dye with a mineral. In search for stable natural
pigments, the present work focuses on the association of indigo blue with
several zeolitic matrices (LTA... | 1207.3236v1 |
2012-08-09 | The role of charge traps in inducing hysteresis: capacitance - voltage measurements on top gated bilayer graphene | Understanding the origin of hysteresis in the channel resistance from top
gated graphene transistors is important for transistor applications.
Capacitance - voltage measurements across the gate oxide on top gated bilayer
graphene show hysteresis with a charging and discharging time constant of ~100
{\mu}s. However, the... | 1208.1831v1 |
2012-08-15 | A GEANT4 Simulation Studyof BESIII endcap TOF Upgrade | A GEANT4-based Monte-Carlo model is developed to study the performance of
Endcap Time-Of-Flight (ETOF) at BESIII. It's found that the multiple scattering
effects, mainly from the materials at the MDC endcap, can cause multi-hit on
the ETOF's readout cell and significantly influence the timing property of
ETOF. Multi-ga... | 1208.3049v1 |
2012-09-03 | High Efficiency Graphene Solar Cells by Chemical Doping | We demonstrate single layer graphene/n-Si Schottky junction solar cells that
under AM1.5 illumination exhibit a power conversion efficiency (PCE) of 8.6%.
This performance, achieved by doping the graphene with
bis(trifluoromethanesulfonyl)amide, exceeds the native(undoped) device
performance by a factor of 4.5 and the ... | 1209.0432v1 |
2012-09-12 | Channel Length Scaling of MoS2 MOSFETs | In this article, we investigate electrical transport properties in ultrathin
body (UTB) MoS2 two-dimensional (2D) crystals with channel lengths ranging from
2 {\mu}m down to 50 nm. We compare the short channel behavior of sets of
MOSFETs with various channel thickness, and reveal the superior immunity to
short channel ... | 1209.2525v1 |
2012-09-24 | Ba1-xNaxTi2Sb2O (0.0 <= x <= 0.33): A Layered Titanium-based Pnictide Oxide Superconductor | A new layered Ti-based pnictide oxide superconductor, Ba1-xNaxTi2Sb2O (0.0 <=
x <= 0.33), is reported. X-ray studies reveal it crystallizes in the tetragonal
CeCr2Si2C structure. The undoped parent compound, BaTi2Sb2O (P4/mmm;
a=4.1196(1){\AA}; c=8.0951(2){\AA}), exhibits a CDW/SDW transition at 54K. Upon
chemical dopi... | 1209.5447v2 |
2012-09-27 | Fabrication and characterization of semiconducting half Heusler YPtSb thin films | The semiconducting half Heusler compound YPtSb was predicted theoretically to
be capable of changing into topological insulator under proper strain. In this
work, p type semiconducting half-Heusler YPtSb thin films were prepared by
magnetron co-sputtering method from a specially designed target for the first
time. Text... | 1209.6288v2 |
2012-10-08 | Phonon thermal transport outside of local equilibrium in nanowires via molecular dynamics | We study thermal transport through Pt nanowires that bridge planar contacts
as a function of wire length and vibrational frequency of the contacts. When
phonons in the contacts have lower average frequencies than those in the wires
thermal transport occurs under conditions away from local equilibrium with
low-frequency... | 1210.2321v1 |
2012-10-19 | Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions | We report a method of fabricating self-aligned, top-gated graphene
field-effect transistors (GFETs) employing polyethyleneimine spin-on-doped
source/drain access regions, resulting in a 2X reduction of access resistance
and a 2.5X improvement in device electrical characteristics, over undoped
devices. The GFETs on Si/S... | 1210.5535v2 |
2012-10-22 | Fabrication and characterization of the gapless half-Heusler YPtSb thin films | Half-Heusler YPtSb thin films were fabricated by magnetron co-sputtering
method on MgO-buffered SiO2/Si(001) substrates. X-ray diffraction pattern and
Energy dispersive X-ray spectroscopy confirmed the high-quality growth and
stoichiometry. The temperature dependence of the resistivity shows a
semiconducting-type behav... | 1210.5808v1 |
2012-10-29 | Impact of graphene quantum capacitance on transport spectroscopy | We demonstrate experimentally that graphene quantum capacitance
$C_{\mathrm{q}}$ can have a strong impact on transport spectroscopy through the
interplay with nearby charge reservoirs. The effect is elucidated in a
field-effect-gated epitaxial graphene device, in which interface states serve
as charge reservoirs. The F... | 1210.7601v1 |
2012-11-02 | Interface characterization of Co2MnGe/Rh2CuSn Heusler multilayers | All-Heusler multilayer structures have been investigated by means of high
kinetic x-ray photoelectron spectroscopy and x-ray magnetic circular dichroism,
aiming to address the amount of disorder and interface diffusion induced by
annealing of the multilayer structure. The studied multilayers consist of
ferromagnetic Co... | 1211.0489v2 |
2012-11-13 | The giant plasticity of a quantum crystal | When submitted to large stresses at high temperature, usual crystals may
irreversibly deform. This phenomenon is known as plasticity and it is due to
the motion of crystal defects such as dislocations. We have discovered that, in
the absence of impurities and in the zero temperature limit, helium 4 crystals
present a g... | 1211.2976v2 |
2012-11-14 | High-temperature structural phase transition in multiferroic LiCu_2O_2 | LiCu_2O_2 single crystals were studied in the temperature range 300-1100 K by
means of heating-cooling curves of differential thermal analysis (DTA),
thermogravimetry (TG), X-ray powder diffraction and electrical measurements. A
reversible first-order phase transition between orthorhombic and tetragonal
phases was foun... | 1211.3275v1 |
2012-11-14 | Anisotropy and directional pinning in YBaCuO with BaZrO3 nanorods | Measurements of anisotropic transport properties (dc and high-frequency
regime) of driven vortex matter in YBa$_2$Cu$_3$O$_{7-x}$ with elongated
strong-pinning sites (c-axis aligned, self-assembled BaZrO$_3$ nanorods) are
used to demonstrate that the effective-mass angular scaling takes place only in
intrinsic physical... | 1211.3311v2 |
2012-11-23 | 1D to 3D Dimensional Crossover in the Superconducting Transition of the Quasi-One-Dimensional Carbide Superconductor Sc3CoC4 | The transition metal carbide superconductor Sc3CoC4 may represent a new
benchmark system of quasi-1D superconducting behavior. We investigate the
superconducting transition of a high-quality single crystalline sample by
electrical transport experiments. Our data show that the superconductor goes
through a complex dimen... | 1211.5430v4 |
2012-11-26 | Local transport measurements at mesoscopic length scales using scanning tunneling potentiometry | Under mesoscopic conditions, the transport potential on a thin film with
current is theoretically expected to bear spatial variation due to quantum
interference. Scanning tunneling potentiometry is the ideal tool to investigate
such variation, by virtue of its high spatial resolution. We report in this
{\it Letter} the... | 1211.6088v2 |
2012-12-06 | Effects of spin density wave quantization on the electrical transport in epitaxial Cr thin films | We present measurements of the electrical resistivity, $\rho$, in epitaxial
Cr films of different thicknesses grown on MgO (100) substrates, as a function
of temperature, $T$. The $\rho(T)$ curves display hysteretic behavior in
certain temperature range, which is film thickness dependent. The hysteresis
are related to ... | 1212.1408v1 |
2013-01-09 | Hall effect measurements on epitaxial SmNiO3 thin films and implications for antiferromagnetism | The rare-earth nickelates (RNiO3) exhibit interesting phenomena such as
unusual antiferromagnetic order at wavevector q = (1/2, 0, 1/2) and a tunable
insulator-metal transition that are subjects of active research. Here we
present temperature-dependent transport measurements of the resistivity,
magnetoresistance, Seebe... | 1301.1968v3 |
2013-01-11 | Batch-fabricated cantilever probes with electrical shielding for nanoscale dielectric and conductivity imaging | This paper presents the design and fabrication of batch-processed cantilever
probes with electrical shielding for scanning microwave impedance microscopy.
The diameter of the tip apex, which defines the electrical resolution, is less
than 50 nm. The width of the stripline and the thicknesses of the insulation
dielectri... | 1301.2402v1 |
2013-01-14 | Pressure-Induced Superconductivity and Its Scaling with Doping-Induced Superconductivity in the Iron Pnictide with Skutterudite Intermediary Layers | The Ca10(PtnAs8)(Fe2As2)5 (n=3,4) compounds are a new type of iron pnictide
superconductors whose structures consist of stacking Ca-PtnAs8-Ca-Fe2As2 layers
in a unit cell. When n=3 (the 10-3-8 phase), the undoped compound is an
antiferromagnetic (AFM) semiconductor, while, when n=4 (the 10-4-8 phase), the
undoped compo... | 1301.2863v2 |
2013-02-08 | Electrical transport across Au/Nb:SrTiO3 Schottky interface with different Nb doping | We have investigated electron transport in Nb doped SrTiO$_3$ single crystals
for two doping densities. We find that the resistivity and mobility are
temperature dependent in both whereas the carrier concentration is almost
temperature invariant. We rationalize this using the hydrogenic theory for
shallow donors. Furth... | 1302.2096v1 |
2013-02-14 | Transport studies of dual-gated ABC and ABA trilayer graphene: band gap opening and band structure tuning in very large perpendicular electric field | We report on the transport properties of ABC and ABA stacked trilayer
graphene using dual, locally gated field effect devices. The high efficiency
and large breakdown voltage of the HfO2 top and bottom gates enables
independent tuning of the perpendicular electric field and the Fermi level over
an unprecedentedly large... | 1302.3432v1 |
2013-02-21 | Superconductivity induced by U-doping in the SmFeAsO system | Through partial substitution of Sm by U in SmFeAsO, a different member of the
family of iron-based superconductors was successfully synthesized. X-ray
diffraction measurements show that the lattice constants along the a and c axes
are both squeezed through U doping, indicating a successful substitution of U
at the Sm s... | 1302.5155v1 |
2013-04-10 | Pinning in a Porous Bi2223 | The current-voltage characteristics of a porous superconductor Bi2Sr2Ca2Cu3Ox
(Bi2223) have been measured at temperature range from 10 to 90 K. The
experimental dependences have been analyzed within the model allowing for
pinning by clusters of a normal phase with fractal boundaries, as well as the
model taking into ac... | 1304.2844v1 |
2013-04-10 | Multi-band superconductivity and nanoscale inhomogeneity at oxide interfaces | The two-dimensional electron gas at the LaTiO3/SrTiO3 or LaAlO3/SrTiO3 oxide
interfaces becomes superconducting when the carrier density is tuned by gating.
The measured resistance and superfluid density reveal an inhomogeneous
superconductivity resulting from percolation of filamentary structures of
superconducting "p... | 1304.2970v1 |
2013-04-22 | Electrical transport in C-doped GaAs nanowires: surface effects | The resistivity and the mobility of Carbon doped GaAs nanowires have been
studied for different doping concentrations. Surface effects have been
evaluated by comparing upassivated with passivated nanowires. We directly see
the influence of the surface: the pinning of the Fermi level and the consequent
existence of a de... | 1304.5891v1 |
2013-05-23 | Electronic origin of the orthorhombic Cmca structure in compressed elements and binary alloys | Formation of the complex structure with 16 atoms in the orthorhombic cell,
space group Cmca (Pearson symbol oC16) was experimentally found under high
pressure in the alkali elements (K, Rb, Cs) and polyvalent elements of groups
IV (Si, Ge) and V (Bi). Intermetallic phases with this structure form under
pressure in bina... | 1305.5341v1 |
2013-05-29 | Intrinsic and extrinsic origins of low-frequency noise in GaAs/AlGaAs Schottky-gated nanostructures | We study low-frequency noise in current passing through quantum point
contacts fabricated from several GaAs/AlGaAs heterostructures with different
layer structures and fabrication processes. In contrast to previous reports,
there is no gate-dependent random telegraph noise (RTN) originating from
tunneling through a Sch... | 1305.6701v1 |
2013-06-29 | Coexistence of Half-Metallic Itinerant Ferromagnetism with Local-Moment Antiferromagnetism in Ba{0.60}K{0.40}Mn2As2 | Magnetization, nuclear magnetic resonance, high-resolution x-ray diffraction
and magnetic field-dependent neutron diffraction measurements reveal a novel
magnetic ground state of Ba{0.60}K{0.40}Mn2As2 in which itinerant
ferromagnetism (FM) below a Curie temperature TC = 100 K arising from the doped
conduction holes coe... | 1307.0091v2 |
2013-07-22 | Dimensional-Crossover-Driven Mott Insulators in SrVO3 Ultrathin Films | High-quality epitaxial SrVO3 (SVO) thin films of various thicknesses were
grown on (001)-oriented LSAT substrates by pulsed electron-beam deposition
technique. Thick SVO films (~25 nm) exhibited metallic behavior with the
electrical resistivity following the T2 law corresponding to a Fermi liquid
system. We observed a ... | 1307.5819v2 |
2013-07-26 | Electron-phonon coupling in cuprate and iron-based superconductors revealed by Raman scattering | Electron-phonon coupling (EPC) is one of the most common and fundamental
interactions in solids. It not only dominates many basic dynamic processes like
resistivity, thermal conductivity etc, but also provides the pairing glue in
conventional superconductors. But in high-temperature superconductors (HTSC),
it is still ... | 1307.6972v1 |
2014-02-10 | Evolution and defect analysis of vertical graphene nanosheets | We report catalyst-free direct synthesis of vertical graphene nanosheets
(VGNs) on SiO2/Si and quartz substrates using microwave electron cyclotron
resonance - plasma enhanced chemical vapor deposition. The evolution of VGNs is
studied systematically at different growth stages. Raman analysis as a function
of growth ti... | 1402.2074v3 |
2014-02-19 | Phase Diagram of Micron-Size Bridges of SrTiO$_3/$LaAlO$_3$ Interface: Link Between Multiple Band Structure and Superconductivity | The rich phase diagram of the two dimensional electron gas (2DEG) at the
\STO/\LAO interface is probed using Hall and longitudinal resistivity. Thanks
to a special bridge design we are able to tune through the superconducting
transition temperature T$_c$ and to mute superconductivity by either adding or
removing carrie... | 1402.4646v1 |
2014-03-04 | Effect of modulations of doping and strain on the electron transport in monolayer MoS_2 | The doping and strain effects on the electron transport of monolayer MoS_2
are systematically investigated using the first-principles calculations with
Boltzmann transport theory. We estimate the mobility has a maximum 275
cm^2/(Vs) in the low doping level under the strain-free condition. The applying
a small strain (3... | 1403.0695v2 |
2014-03-29 | Two components for one resistivity in LaVO3/SrTiO3 heterostructures | A series of 100 nm LaVO3 thin films have been synthesized on (001)-oriented
SrTiO3 substrates using the pulsed laser deposition technique, and the effects
of growth temperature are analyzed. Transport properties reveal a large
electronic mobility and a non-linear Hall effect at low temperature. In
addition, a cross-ove... | 1403.7648v2 |
2014-04-07 | Directional pinning and anisotropy in YBa2Cu3O7-x with BaZrO3 nanorods: intrinsic and nanorods-induced anisotropy | We present a study of the anisotropic vortex parameters as obtained from
measurements of the microwave complex resistivity in the vortex state with a
tilted applied magnetic field in YBa2Cu3O7-x thin films with BaZrO3 nanorods.
We present the angular dependence of the vortex viscosity $\eta$, the pinning
constant k_p a... | 1404.1670v1 |
2014-05-07 | Anisotropic giant magnetoresistance in NbSb2 | The extremely large transverse magnetoreistance (the magnetoresistant ratio
$\sim 1.3\times10^5\%$ in 2 K and 9 T field, and $4.3\times 10^6\%$ in 0.4 K
and 32 T field, without saturation), and the metal-semiconductor crossover
induced by magnetic field, are reported in NbSb$_2$ single crystal with
electric current par... | 1405.1719v2 |
2014-06-05 | Current transport and thermoelectric properties of very high power factor Fe3O4 / SiO2 / p-type Si (001) devices | The current transport and thermoelectric properties of Fe3O4 / SiO2 / p-type
Si(001) heterostructures with Fe3O4 thicknesses of 150, 200, and 350 nm have
been investigated between 100 and 300 K. We observe a sharp drop of the
in-plane resistivity at 200K due to the onset of conduction along the Si / SiO2
interface rela... | 1406.1282v1 |
2014-06-20 | Anomalous Hall Effect in Ge(1-x-y)Pb(x)Mn(y)Te Composite System | The purpose of this study was to investigate the magnetotransport properties
of the Ge(0.743)Pb(0.183)Mn(0.074)Te mixed crystal. The results of
magnetization measurements indicated that the compound is a spin-glass-like
diluted magnetic semiconductor with critical temperature TSG = 97.5 K.
Nanoclusters in the sample ar... | 1406.5294v1 |
2014-07-22 | Universal scaling of the critical temperature for thin films near the superconducting-to-insulating transition | Thin superconducting films form a unique platform for geometrically-confined,
strongly-interacting electrons. They allow an inherent competition between
disorder and superconductivity, which in turn enables the intriguing
superconducting-to-insulator transition and believed to facilitate the
comprehension of high-Tc su... | 1407.5945v2 |
2014-09-18 | Electrical and optical properties of ITO thin films prepared by DC magnetron sputtering for low-emitting coatings | Optimized DC magnetron sputtering system for the deposition of transparent
conductive oxides (TCOs), such indium tin oxide (ITO) on glass substrate has
been applied in order to achieve low-emitting (low-e) transparent coatings. To
obtain the concerned electrical resistance and high infrared reflection, first
the effect... | 1409.5293v1 |
2014-09-25 | Characterisation of Glass Electrodes and RPC Detectors for $INO-ICAL$ Experiment | India-based Neutrino Observatory (INO) is a planned neutrino experiment to be
build up in southern part of India.The INO observatory will host a 51 kton Iron
Calorimeter (ICAL) detector to detect atmospheric neutrinos. Resistive Plate
Chamber (RPC) has been chosen as the active detector element for the ICAL
experiment.... | 1409.7184v1 |
2014-11-24 | Thermoelectric power of bulk black-phosphorus | The potential of bulk black-phosphorus for thermoelectric applications has
been experimentally studied. The Seebeck Coefficient (S) has been measured in
the temperature range from 300 K to 385 K, finding a value of S = +335 +- 10
uV/K at room temperature (indicating a naturally occurring p-type
conductivity). S increas... | 1411.6468v2 |
2014-11-26 | Towards high mobility InSb nanowire devices | We study the low-temperature electron mobility of InSb nanowires. We extract
the mobility at 4.2 Kelvin by means of field effect transport measurements
using a model consisting of a nanowire-transistor with contact resistances.
This model enables an accurate extraction of device parameters, thereby
allowing for a syste... | 1411.7285v2 |
2014-12-22 | Large anisotropic thermal conductivity of intrinsically two-dimensional metallic oxide PdCoO$_2$ | The highly conductive layered metallic oxide \pdcoo{} is a near-perfect
analogue to an alkali metal in two dimensions. It is distinguished from other
two-dimensional electron systems where the Fermi surface does not reach the
Brillouin zone boundary by a high planar electron density exceeding $10^{15}$
cm$^{-2}$. The s... | 1412.6919v1 |
2015-02-06 | Anomalous Pressure Dependence of magnetic Ordering Temperature in Tb to 141 GPa: Comparison with Gd and Dy | In previous studies the pressure dependence of the magnetic ordering
temperature $T_{\text{o}}$ of Dy was found to exhibit a sharp increase above
its volume collapse pressure of 73 GPa, appearing to reach temperatures well
above ambient at 157 GPa. In a search for a second such lanthanide, electrical
resistivity measur... | 1502.01785v1 |
2015-02-07 | Interband Tunneling for Hole Injection in III-Nitride Ultra-violet Emitters | Ultra-violet emitters have several applications in the areas of sensing,
water purification, and data storage. While the III-Nitride semiconductor
system has the band gap region necessary for ultraviolet emission, achieving
efficient ultraviolet solid state emitters remains a challenge due to the low
p-type conductivit... | 1502.02080v1 |
2015-02-27 | Quantum oscillations, thermoelectric coefficients and the Fermi surface of semi-metallic WTe2 | We present a study of angle-resolved quantum oscillations of electric and
thermoelectric transport coefficients in semi-metallic WTe$_{2}$, which has the
particularity of displaying a large B$^{2}$ magneto-resistance. The Fermi
surface consists of two pairs of electron-like and hole-like pockets of equal
volumes in a "... | 1502.07797v2 |
2015-05-19 | Energy Exchange between Phononic and Electronic Subsystem Governing The Nonlinear Conduction in DCNQI$_2$Cu | We present a dynamical study on the nonlinear conduction behaviour in the
commensurate charge-density-wave phase of the quasi-one-dimensional conductor
DCNQI$_2$Cu below 75 K. We can accurately simulate magnitude and
time-dependence of the measured conductivity in response to large voltage
pulses by accounting for the ... | 1505.04907v2 |
2015-08-19 | Argument on superconductivity pairing mechanism from cobalt impurity doping in FeSe: spin ($s_{\pm}$) or orbital ($s_{++}$) fluctuation | In high-superconducting transition temperature ($T_{\rm c}$) iron-based
superconductors, interband sign reversal ($s_{\rm \pm}$) and sign preserving
($s_{\rm ++}$) $s$-wave superconducting states have been primarily discussed as
the plausible superconducting mechanism. We study Co impurity scattering
effects on the sup... | 1508.04605v2 |
2015-08-19 | Electric field control of spin lifetimes in Nb-SrTiO$_3$ by spin-orbit fields | We show electric field control of the spin accumulation at the interface of
the oxide semiconductor Nb-SrTiO$_{3}$ with Co/AlO$_{x}$ spin injection
contacts at room temperature. The in-plane spin lifetime $\tau_\parallel$ as
well as the ratio of the out-of-plane to in-plane spin lifetime
$\tau_\perp/\tau_\parallel$ is ... | 1508.04649v1 |
2015-09-13 | Effects of Cr substitution on the magnetic and transport properties and electronic states of SrRuO3 epitaxial thin films | The effect of Cr substitution in a SrRuO3 epitaxial thin film on SrTiO3
substrate was investigated by measuring the magnetic and transport properties
and the electronic states. The ferromagnetic transition temperature of the
SrRu0.9Cr0.1O3 film (166 K) was higher than that of the SrRuO3 film (147 K).
Resonant photoemis... | 1509.03804v1 |
2015-10-22 | Anomalous transport and thermoelectric performances of CuAgSe compounds | The copper silver selenide has two phases: the low-temperature semimetal
phase ({\alpha}-CuAgSe) and high-temperature phonon-glass superionic phase
(\b{eta}-CuAgSe). In this work, the electric transport and thermoelectric
properties of the two phases are investigated. It is revealed that the
\b{eta}-CuAgSe is a p-type ... | 1510.06616v1 |
2015-11-12 | Experimental and numerical analysis of tribological behavior of CrAl(Si)N films during Scratch | Scratch sliding tests with a ZrO2 ball and CrAlSiN films with different Si
content were conducted due to CrAlSiN films having high hardness and good wear
resistance. After up to 6000 cycles the specimens were analyzed by Scanning
Electron Microscopy. The friction coefficient of CrAlSiN was lower than that of
CrAlN film... | 1511.04092v2 |
2015-12-27 | Room-temperature paramagnetoelectric effect in magnetoelectric multiferroics Pb(Fe1/2Nb1/2)O3 and its solid solution with PbTiO3 | We have observed the magnetoelectric response at room temperature and above
in high-resistive ceramics made of multiferroic Pb(Fe1/2Nb1/2)O3 (PFN) and
PFN-based solid solution 0.91PFN-0.09PbTiO3 (PFN-PT). The value of the
paramagnetoelectric (PME) coefficient shows a pronounced maximum near the
ferroelectric-to-paraele... | 1512.08217v1 |
2015-12-31 | Intrinsic Nanotwin Effect on Thermal Boundary Conductance in Bulk and Single-Nanowire Twinning Superlattices | Coherent twin boundaries form periodic lamellar twinning in a wide variety of
semiconductor nanowires, and are often viewed as near-perfect interfaces with
reduced phonon and electron scattering behaviors. Such unique characteristics
are of practical interest for high-performance thermoelectrics and
optoelectronics; ho... | 1512.09357v2 |
2016-02-20 | Investigation of the electron-phonon interaction in $N{{b}_{3}}Sn$ with the aid of microcontacts | The method of microcontact spectroscopy in the superconducting state was used
to investigate weak nonlinearities of the current-voltage characteristics of
point contacts made of $N{{b}_{3}}Sn$ single crystals. The nature of the
spectrum of the electron-phonon interaction was found to vary considerably from
contact to c... | 1602.06398v1 |
2016-04-11 | Single crystal growth of CeTAl$_3$ (T = Cu, Ag, Au, Pd and Pt) | We report single crystal growth of the series of CeTAl$_3$ compounds with T =
Cu, Ag, Au, Pd and Pt by means of optical float zoning. High crystalline
quality was confirmed in a thorough characterization process. With the
exception of CeAgAl$_3$, all compounds crystallize in the non-centrosymmetric
tetragonal BaNiSn$_{... | 1604.03146v1 |
2016-04-14 | Large magnetothermopower and Fermi surface reconstruction in Sb$_2$Te$_2$Se | We report the magnetoresistance, magnetothermopower and quantum oscillation
study of Sb$_2$Te$_2$Se single crystal. The in-plane transverse
magnetoresistance exhibits a crossover at a critical field $B^*$ from
semiclassical weak-field $B^2$ dependence to the high-field unsaturated linear
magnetoresistance which persist... | 1604.04281v1 |
2016-04-15 | Electronic Structure Descriptor for Discovery of Narrow-Band Red-Emitting Phosphors | Narrow-band red-emitting phosphors are a critical component in
phosphor-converted light-emitting diodes for highly efficient
illumination-grade lighting. In this work, we report the discovery of a
quantitative descriptor for narrow-band Eu2+-activated emission identified
through a comparison of the electronic structure... | 1604.04581v1 |
2016-04-18 | Superconductivity in undoped CaFe2As2 single crystals | Single crystals of undoped CaFe2As2 were grown by a FeAs self-flux method,
and the crystals were quenched in ice-water rapidly after high temperature
growth. The quenched crystal undergoes a collapsed tetragonal structural phase
transition around 80 K revealed by the temperature dependent X-ray diffraction
measurements... | 1604.04964v1 |
2016-04-22 | Multiband behavior and non-metallic low-temperature state of K$_{0.50}$Na$_{0.24}$Fe$_{1.52}$Se$_{2}$ | We report evidence for multiband transport and an insulating low-temperature
normal state in superconducting K$_{0.50}$Na$_{0.24}$Fe$_{1.52}$Se$_{2}$ with
$T_{c}\approx 20$ K. The temperature-dependent upper critical field, $H_{c2}$,
is well described by a two-band BCS model. The normal-state resistance,
accessible at ... | 1604.06793v1 |
2016-05-30 | High-field electron transport in bulk ZnO | Current-voltage dependence is measured in (Ga,Sb)-doped ZnO up to 150 kV/cm
electric fields. A channel temperature is controlled by applying relatively
short (few ns) voltage pulses to two-terminal samples. The dependence of
electron drift velocity on electron density ranging from 1.42$\times$10$^{17}$
cm$^{-3}$ to 1.3... | 1605.09117v1 |
2016-06-27 | Hafnium carbide formation in oxygen deficient hafnium oxide thin films | On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO$_{2-x}$)
contaminated with adsorbates of carbon oxides, the formation of hafnium carbide
(HfC$_x$) at the surface during vacuum annealing at temperatures as low as 600
{\deg}C is reported. Using X-ray photoelectron spectroscopy the evolution of
the HfC... | 1606.08227v1 |
2016-06-29 | Improved model for the thermal conductivity of binary metallic systems | We extended and corrected Mott's two-band model for the
composition-dependence of thermal and electrical conductivity in binary metal
alloys based on high-throughput time-domain thermoreflectance (TDTR)
measurements on diffusion multiples and scatterer-density calculations from
first principles. Examining PdAg, PtRh, A... | 1606.09287v2 |
2016-06-30 | Superconductivity at 5.5 K in Nb2PdSe5 compound | We report superconductivity in as synthesized Nb2PdSe5, which is similar to
recently discovered Nb2PdS5 compound having very high upper critical field,
clearly above the Pauli paramagnetic limit [Sci. Rep. 3, 1446 (2013)]. A bulk
polycrystalline Nb2PdSe5 sample is synthesized by solid state reaction route in
phase pure... | 1606.09369v2 |
2016-08-01 | Phase Transition in IrTe$_2$ induced by spin-orbit coupling | IrTe$_2$ has been renewed as an interesting system showing competing
phenomenon between a questionable density-wave transition near 270 K followed
by superconductivity with doping of high atomic number materials. Higher atomic
numbers of Te and Ir supports strong spin-orbital coupling in this system.
Using dynamical me... | 1608.00467v1 |
2016-08-03 | Edge-induced Schottky barrier modulation at metal contacts to exfoliated molybdenum disulfide flakes | Ultrathin two-dimensional semiconductors obtained from layered
transition-metal dichalcogenides such as molybdenum disulfide (MoS2) are
promising for ultimately scaled transistors beyond Si. Although the shortening
of the semiconductor channel is widely studied, the narrowing of the channel,
which should also be import... | 1608.01061v1 |
2016-08-23 | Chiral anomaly and longitudinal magnetotransport in type-II Weyl semimetals | In the presence of parallel electric and magnetic fields, the violation of
separate number conservation laws for the three dimensional left and right
handed Weyl fermions is known as the chiral anomaly. The recent discovery of
Weyl and Dirac semimetals has paved the way for experimentally testing the
effects of chiral ... | 1608.06625v2 |
2016-10-19 | Anomalous Thermal Diffusivity in Underdoped YBa$_2$Cu$_3$O$_{6+x}$ | We present local optical measurements of thermal diffusivity in the $ab$
plane of underdoped YBCO crystals. We find that the diffusivity anisotropy is
comparable to reported values of the electrical resistivity anisotropy,
suggesting that the anisotropies have the same origin. The anisotropy drops
sharply below the cha... | 1610.05845v2 |
2016-10-22 | High performance THz emitters based on ferromagnetic/nonmagnetic heterostructures | We report a THz emitter with excellent performances based on nonmagnetic (NM)
and ferromagnetic (FM) heterostructures. The spin currents are first excited by
the femtosecond laser beam in the NM/FM bilayer, and then transient charge
currents are generated by inverse spin Hall effect, leading to THz emission out
of the ... | 1610.07020v1 |
2016-10-26 | S2DS: Physics-Based Compact Model for Circuit Simulation of Two-Dimensional Semiconductor Devices Including Non-Idealities | We present a physics-based compact model for two-dimensional (2D)
field-effect transistors (FETs) based on monolayer semiconductors such as MoS2.
A semi-classical transport approach is appropriate for the 2D channel, enabling
simplified analytical expressions for the drain current. In addition to
intrinsic FET behavior... | 1610.08489v2 |
2016-11-14 | Nonlinear Transport of Graphene in the Quantum Hall Regime | We have studied the breakdown of the integer quantum Hall (QH) effect with
fully broken symmetry, in an ultra-high mobility graphene device sandwiched
between two single crystal hexagonal boron nitride substrates. The evolution
and stabilities of the QH states are studied quantitatively through the
nonlinear transport ... | 1611.04221v1 |
2016-11-15 | Encapsulated Nanowires: Boosting Electronic Transport in Carbon Nanotubes | The electrical conductivity of metallic carbon nanotubes (CNTs) quickly
saturates with respect to bias voltage due to scattering from a large
population of optical phonons. Decay of these dominant scatterers in pristine
CNTs is too slow to offset an increased generation rate at high voltage bias.
We demonstrate from fi... | 1611.04867v2 |
2016-12-06 | Enhanced Structural Stability and Photo Responsiveness of CH3NH3SnI3 Perovskite via Pressure-Induced Amorphization and Recrystallization | An organic-inorganic halide perovskite of CH3NH3SnI3 with significantly
improved structural stability is obtained via pressure-induced amorphization
and recrystallization. In situ high-pressure resistance measurements reveal an
increased electrical conductivity by 300% in the pressure-treated perovskite.
Photocurrent m... | 1612.01649v1 |
2016-12-20 | Enhanced Superconductivity in TiO Epitaxial Thin Films | Titanium oxides have many fascinating optical and electrical properties, such
as the superconductivity at 2.0 K in cubic titanium monoxide TiO
polycrystalline bulk. However, the lack of TiO single crystals or epitaxial
films has prevented systematic investigations on its superconductivity. Here,
we report the basic sup... | 1612.06506v1 |
2017-02-02 | Two-temperature equations of state for d-band metals irradiated by femtosecond laser pulses | The cold curves for energy and pressure of Copper, Iron, and Tantalum were
obtained using methods of the density functional theory. We consider
hydrostatic and uniaxial deformations in the range from double compression of
the initial volume per atom to double stretching. The presence of allotropic
transformation from $... | 1702.00825v3 |
2017-02-15 | New bulk p-type skutterudites DD0.7Fe2.7Co1.3Sb12-xXx (X = Ge, Sn) reaching ZT>1.3 | The best p-type skutterudites so far are didymium filled, Fe/Co substituted,
Sb-based skutterudites. Substitution at the Sb-sites influences the electronic
structure, deforms the Sb4-rings, enhances the scattering of phonons on
electrons and impurities and this way reduces the lattice thermal conductivity.
In this pape... | 1702.04498v1 |
2017-02-24 | Out-of-plane easy-axis in thin films of diluted magnetic semiconductor Ba1-xKx(Zn1-yMny)2As2 | Single-phased, single-oriented thin films of Mn-doped ZnAs-based diluted
magnetic semiconductor (DMS) Ba1-xKx(Zn1-yMny)2As2 (x = 0.03, 0.08; y = 0.15)
have been deposited on Si, SrTiO3, LaAlO3, (La,Sr)(Al,Ta)O3, and MgAl2O4
substrates, respectively. Utilizing a combined synthesis and characterization
system excluding t... | 1702.07506v1 |
2017-06-16 | An argon ion beam milling process for native $\text{AlO}_\text{x}$ layers enabling coherent superconducting contacts | We present an argon ion beam milling process to remove the native oxide layer
forming on aluminum thin films due to their exposure to atmosphere in between
lithographic steps. Our cleaning process is readily integrable with
conventional fabrication of Josephson junction quantum circuits. From
measurements of the intern... | 1706.06424v1 |
2017-06-29 | Magnetotransport properties of MoP$_2$ | We report magnetotransport and de Haas-van Alphen (dHvA) effect studies on
MoP$_2$ single crystals, predicted to be type-2 Weyl semimetal with four pairs
of robust Weyl points located below the Fermi level and long Fermi arcs. The
temperature dependence of resistivity shows a peak before saturation, which
does not move... | 1706.09830v1 |
2017-09-11 | Massive fermions with low mobility in antiferromagnet orthorhombic CuMnAs single crystals | We report the physical properties of orthorhombic o-CuMnAs single crystal,
which is predicted to be a topological Dirac semimetal with magnetic ground
state and inversion symmetry broken. o-CuMnAs exhibits an antiferromagnetic
transition with TN ~ 312 K. Further characterizations of magnetic properties
suggest that the... | 1709.03394v2 |
2017-09-13 | Ultra-broadband photodetectors based on epitaxial graphene quantum dots | Graphene is an ideal material for hot-electron bolometers, due to its low
heat capacity and weak electron-phonon coupling. Nanostructuring graphene with
quantum dot constrictions yields detectors with extraordinarily high intrinsic
responsivity, higher than 1x10^9 V/W at 3K. The sensing mechanism is bolometric
in natur... | 1709.04498v1 |
2017-09-27 | Pressure-induced Lifshitz transition in NbP: Raman, x-ray diffraction, electrical transport and density functional theory | We report high pressure Raman, synchrotron x-ray diffraction and electrical
transport studies on Weyl semimetals NbP and TaP along with first-principles
density functional theoretical (DFT) analysis. The frequencies of first-order
Raman modes of NbP harden with increasing pressure and exhibit a slope change
at P$_c$ $\... | 1709.09368v1 |
2017-10-27 | Unusual behavior of cuprates explained by heterogeneous charge localization | The cuprate high-temperature superconductors are among the most intensively
studied materials, yet essential questions regarding their principal phases and
the transitions between them remain unanswered. Generally thought of as doped
charge-transfer insulators, these complex lamellar oxides exhibit pseudogap,
strange-m... | 1710.10221v1 |
2017-11-05 | Investigations of a Robotic Testbed with Viscoelastic Liquid Cooled Actuators | We design, build, and thoroughly test a new type of actuator dubbed
viscoelastic liquid cooled actuator (VLCA) for robotic applications. VLCAs
excel in the following five critical axes of performance: energy efficiency,
torque density, impact resistence, joint position and force controllability. We
first study the desi... | 1711.01649v2 |
2017-11-07 | Epitaxial stabilization of pulsed laser deposited Sr$_{n+1}$Ir$_n$O$_{3n+1}$ thin films: entangled effect of growth dynamics and strain | The subtle balance of electronic correlations, crystal field splitting and
spin--orbit coupling in layered Ir$^{4+}$ oxides can give rise to novel
electronic and magnetic phases. Experimental progress in this field relies on
the synthesis of epitaxial films of these oxides. However, the growth of
layered iridates with ... | 1711.02767v3 |
2017-11-09 | Magnetic phase separation and strong AFM nature of hexagonal Gd$_5$Sb$_3$ | We report on the combined results of structural, magnetic, transport and
calorimetric properties of Mn$_5$Si$_3$-type hexagonal Gd$_5$Sb$_3$. With
decreasing temperature, it exhibits a ferromagnetic-like transition at 265 K,
N\'{e}el transition at 95.5 K and a spin-orientation transition at 62 K. The
system is found to... | 1711.03263v1 |
2017-11-29 | Pressure-induced ferromagnetism due to an anisotropic electronic topological transition in Fe1.08Te | A rapid and anisotropic modification of the Fermi-surface shape can be
associated with abrupt changes in crystalline lattice geometry or in the
magnetic state of a material. In this study we show that such an electronic
topological transition is at the basis of the formation of an unusual
pressure-induced tetragonal fe... | 1711.10745v1 |
2018-01-15 | Improving Graphene-metal Contacts: Thermal Induced Polishing | Graphene is a very promising material for nanoelectronics applications due to
its unique and remarkable electronic and thermal properties. However, when
deposited on metallic electrodes the overall thermal conductivity is
significantly decreased. This phenomenon has been attributed to the mismatch
between the interface... | 1801.04785v1 |
2018-01-31 | Commensurability Oscillations in One-Dimensional Graphene Superlattices | We report the experimental observation of commensurability oscillations (COs)
in 1D graphene superlattices. The widely tunable periodic potential modulation
in hBN encapsulated graphene is generated via the interplay of nanopatterned
few layer graphene acting as a local bottom gate and a global Si back gate. The
longit... | 1802.00016v2 |
2018-03-22 | High density carriers at a strongly coupled graphene-topological insulator interface | We report on a strongly coupled bilayer graphene (BLG) - \bise\ device with a
junction resistance of less than 1.5 k$\Omega\mu$m$^2$. This device exhibits
unique behavior at the interface, which cannot be attributed to either material
in absence of the other. We observe quantum oscillations in the
magnetoresistance of ... | 1803.08260v1 |
2018-03-27 | Large-Scale Fabrication of RF MOSFETs on Liquid-Exfoliated MoS2 | For the first time, thousands of RF MOSFETs were batch-fabricated on
liquid-exfoliated MoS2 below 300 {\deg}C with nearly 100% yield. The
large-scale fabrication with high yield allowed the average performance instead
of the best performance to be reported. The DC performance of these devices
were typical, but the RF p... | 1803.09906v1 |
2018-05-20 | Autonomous actuation of zero modes in mechanical networks far from equilibrium | A zero mode, or floppy mode, is a non-trivial coupling of mechanical
components yielding a degree of freedom with no resistance to deformation.
Engineered zero modes have the potential to act as microscopic motors or memory
devices, but this requires an internal actuation mechanism that can overcome
unwanted fluctuatio... | 1805.07728v2 |
2018-06-06 | Pressure Evolution of Magnetism in URhGa | In this paper, we report the results of an ambient and high pressure study of
a 5f-electron ferromagnet URhGa. The work is focused on measurements of
magnetic and thermodynamic properties of a single crystal sample and on the
construction of the p-T phase diagram. Diamond anvil cells were employed to
measure the magnet... | 1806.02686v1 |
2018-06-25 | Ferromagnetism above 1000 K in highly cation-ordered double-perovskite insulator Sr3OsO6 | Magnetic insulators have been intensively studied for over 100 years, and
they, in particular ferrites, are considered to be the cradle of magnetic
exchange interactions in solids. Their wide range of applications include
microwave devices and permanent magnets . They are also suitable for spintronic
devices owing to t... | 1806.09308v1 |
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