publicationDate stringlengths 10 10 | title stringlengths 17 233 | abstract stringlengths 20 3.22k | id stringlengths 9 12 |
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2022-04-02 | Traction of Interlocking Spikes on a Granular Material | The interlock drive system generates traction by inserting narrow articulated
spikes into the ground and by leveraging the soil's strength to resist
horizontal draft forces. The system promises high tractive performance in low
gravity environments where tires have little traction for lack of weight. At
Earth and Space ... | 2205.00840v2 |
2015-02-12 | RF Transport Electromagnetic Properties of CVD Graphene from DC to 110 MHz | We report measurement of the radio-frequency (RF) transport electromagnetic
properties of chemical vapour deposition (CVD) graphene over the DC to 110 MHz
frequency range at room temperature. Graphene on Si/SiO2 substrate was mounted
in a shielded four terminal-pair (4TP) adaptor which enabled direct connection
to a ca... | 1502.03835v1 |
2015-12-11 | Intrinsic high electrical conductivity of stoichiometric SrNbO3 epitaxial thin films | SrVO3 and SrNbO3 are perovskite-type transition-metal oxides with the same d1
electronic configuration. Although SrNbO3 (4d1) has a larger d orbital than
SrVO3 (3d1), the reported electrical resistivity of SrNbO3 is much higher than
that of SrVO3, probably owing to nonstoichiometry. In this paper, we grew
epitaxial, hi... | 1512.03588v1 |
2020-08-22 | Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating | In this work, we demonstrate high performance indium-tin-oxide (ITO)
transistors with the channel thickness down to 1 nm and ferroelectric
Hf0.5Zr0.5O2 as gate dielectric. On-current of 0.243 A/mm is achieved on
sub-micron gate-length ITO transistors with a channel thickness of 1 nm, while
it increases to as high as 1.... | 2008.09881v1 |
2022-12-13 | Collapse of Metallicity and High-$T_c$ Superconductivity in the High-Pressure phase of FeSe$_{0.89}$S$_{0.11}$ | We investigate the high-pressure phase of the iron-based superconductor
FeSe$_{0.89}$S$_{0.11}$ using transport and tunnel diode oscillator studies. We
construct detailed pressure-temperature phase diagrams that indicate that
outside of the nematic phase, the superconducting critical temperature reaches
a minimum befor... | 2212.06824v1 |
2023-03-30 | Highly tunable NbTiN Josephson junctions fabricated with focused helium ion beam | We demonstrate a "direct writing" method for the fabrication of planar
Josephson junctions from high quality superconducting niobium titanium nitride
(NbTiN) thin films using focused He-ion beam irradiation. Compared to the
materials previously used in such processing, YBCO and MgB$_2$, NbTiN has much
better mechanical... | 2303.17348v1 |
2020-09-05 | Corrosion Resistance of Sulfur-Selenium Alloy Coatings | Despite decades of research, metallic corrosion remains a long-standing
challenge in many engineering applications. Specifically, designing a material
that can resist corrosion both in abiotic as well as biotic environments
remains elusive. Here we design a lightweight sulfur-selenium (S-Se) alloy with
high stiffness a... | 2009.02451v1 |
2006-09-08 | Peak resistance temperature and low temperature resistivity in thin film $La_{1-x} Ca_x Mn O_3$ mixtures for x <= 1/3 | The electrical resistivity of La$_{1-x}$Ca$_{x}$MnO$_{3}$ thin films grown on
(001) NdGaO$_{3}$ and (100) SrTiO$_{3}$ substrates by off-axis sputtering has
been studied as a function of the Calcium doping level. The samples have very
narrow rocking curves and excellent in plane registry with the substrate. A
strong cor... | 0609206v1 |
2011-10-18 | Superior performance of multilayered fluoropolymer films in low voltage electrowetting | The requirement for low operational voltage in electrowetting devices, met
using thin dielectrics, is usually connected with serious material failure
issues. Dielectric breakdown (visible as electrolysis) is frequently evident
slightly beyond the onset of the contact angle saturation. Here, plasma
enhanced chemical vap... | 1110.4075v1 |
2023-12-11 | High-speed sensing of RF signals with phase change materials | RF radiation spectrum is central to wireless and radar systems among numerous
high-frequency device technologies. Here, we demonstrate sensing of RF signals
in the technologically relevant 2.4 GHz range utilizing vanadium dioxide (VO2),
a quantum material that has garnered significant interest for its
insulator-to-meta... | 2312.06459v1 |
2015-09-14 | Torsional chiral magnetic effect in Weyl semimetal with topological defect | We propose a torsional response raised by lattice dislocation in Weyl
semimetals akin to chiral magnetic effect; i.e. a fictitious magnetic field
arising from screw or edge dislocation induces charge current. We demonstrate
that, in sharp contrast to the usual chiral magnetic effect which vanishes in
real solid state m... | 1509.03981v3 |
2016-05-02 | Study of glass properties as electrode for RPC | Operation and performance of the Resistive Plate Chambers (RPCs) mostly
depend on the quality and characteristics of the electrode materials. The
India-based Neutrino Observatory collaboration has chosen glass RPCs as the
active detector elements for its Iron Calorimeter detector and is going to
deploy RPCs in an unpre... | 1605.01044v1 |
2010-07-06 | Effects of chemical substitution on transport properties of Bi-based high temperature superconductors | This report describes some transport and magnetic properties of doped Bi2212
and Bi2223 superconducting whiskers. These materials have advantages over
polycrystalline sample as well as large bulk crystals in that they provide
narrow transitions in resistance versus temperature as well as in magnetization
versus tempera... | 1007.0971v1 |
2021-07-03 | Thin film of Al-Ga-Pd-Mn quasicrystalline alloy | Thin film quasicrystal coatings have unique properties such as very high
electrical and thermal resistivity and very low surface energy. A nano
quasicrystalline thin film of icosahedral Al-Ga-Pd-Mn alloy, has produced by
flash evaporation followed by annealing. Attempts will be made to discuss the
micromechanisms for t... | 2107.01478v1 |
2014-03-06 | Normalized Contact Force to Minimize "Electrode-Lead" Resistance in a Nanodevice | In this report, the contact resistance between "electrode" and "lead" is
investigated for reasonable measurements of samples' resistance in a
polypyrrole (PPy) nanowire device. The sample's resistance, including
"electrode-lead" contact resistance, shows a decrease as force applied to the
interface increases. Moreover,... | 1403.1357v1 |
2004-11-12 | Microwave induced resistance oscillations on a high-mobility 2DEG: absorption/reflection and temperature damping experiments | In this work we address experimentally a number of unresolved issues related
to microwave induced resistance oscillations (MIRO) and the zero-resistance
states observed recently on very high-mobility 2D electron gases in GaAs/AlGaAs
heterostructures. In particular, we examine electrodynamic effects via
reflection/absor... | 0411338v1 |
2007-04-20 | Photoelectric phenomena in structures based on high-resistivity semiconductor crystals with a thin insulator layer at the semiconductor-metal boundary | A previously unknown effect-giant spatial redistribution of the electric
field strength in a crystal under illumination of the structure - was
discovered and investigated in real photoresistors on high-resistivity
(semi-insulating) semiconductor CdTe crystals (in metal-thin insulator-
semiconductor-thin insulator -meta... | 0704.2703v1 |
2009-03-15 | Current-induced electroresistance in Nd0.5Ca0.5Mn0.95Ni0.05O3 | We have investigated the dc and pulsed current-induced electroresistance in
phase separated manganite Nd0.5Ca0.5Mn0.95Ni0.05O3 (NCMONi05) as a function of
temperature and magnetic field. It is shown that the negative differential
resistance which appears above a threshold current (Ic) and hysteresis in the
V-I progress... | 0903.2616v2 |
2009-09-15 | Broken symmetry states and divergent resistance in suspended bilayer graphene | Graphene [1] and its bilayer have generated tremendous excitement in the
physics community due to their unique electronic properties [2]. The intrinsic
physics of these materials, however, is partially masked by disorder, which can
arise from various sources such as ripples [3] or charged impurities [4].
Recent improve... | 0909.2883v1 |
2010-03-06 | Reduction of high reset currents in unipolar resistance switching Pt/SrTiOx/Pt capacitors using acceptor doping | The high reset current, IR, in unipolar resistance switching is an important
issue which should be resolved for practical applications in nonvolatile
memories. We showed that,during the forming and set processes, the compliance
current, Icomp, can work as a crucial parameter to reduce IR. Doping with Co or
Mn can signi... | 1003.1390v1 |
2011-11-01 | High pressure transport properties of the topological insulator Bi2Se3 | We report x-ray diffraction, electrical resistivity, and magnetoresistance
measurements on Bi2Se3 under high pressure and low temperature conditions.
Pressure induces profound changes in both the room temperature value of the
electrical resistivity as well as the temperature dependence of the
resistivity. Initially, pr... | 1111.0098v1 |
2011-11-14 | Study of Resistive Micromegas in a Mixed Neutron and Photon Radiation Field | The Muon ATLAS Micromegas Activity (MAMMA) focuses on the development and
testing of large-area muon detectors based on the bulk-Micromegas technology.
These detectors are candidates for the upgrade of the ATLAS Muon System in view
of the luminosity upgrade of Large Hadron Collider at CERN (sLHC). They will
combine tri... | 1111.3185v1 |
2015-01-26 | Linear magneto-resistance versus weak antilocalization effects in Bi$_2$Te$_3$ films | In chalcogenide topological insulator materials, two types of
magneto-resistance (MR) effects are widely discussed: a positive MR dip around
zero magnetic field associated with the weak antilocalization (WAL) effect and
a linear MR effect which generally persists to high fields and high
temperatures. We have studied th... | 1501.06500v2 |
2018-04-05 | Observation of transition from semiconducting to metallic ground state in high-quality single crystalline FeSi | We report anomalous physical properties of single-crystalline FeSi over a
wide temperature range 1.8-400 K. X-ray diffraction, specific heat, and
magnetization measurements indicate that the FeSi crystals synthesized in this
study are of high quality with a very low concentration of magnetic impurities
($\sim$0.01$\%$)... | 1804.02036v1 |
2014-08-12 | Nematic spin correlations in the tetragonal state of uniaxial strained BaFe2-xNixAs2 | Understanding the microscopic origins of electronic phases in high-transition
temperature (high-Tc) superconductors is important for elucidating the
mechanism of superconductivity. In the paramagnetic tetragonal phase of
BaFe2-xTxAs2 (where T is Co or Ni) iron pnictides, an in-plane resistivity
anisotropy has been obse... | 1408.2756v1 |
2017-07-01 | Memory vs. irreversibility in thermal densification of amorphous glasses | We report on dynamic effects associated with thermally-annealing amorphous
indium-oxide films. In this process the resistance of a given sample may
decrease by several orders of magnitude at room-temperatures, while its
amorphous structure is preserved. The main effect of the process is
densification - increased system... | 1707.00173v1 |
2021-05-24 | Characterization of self-heating in cryogenic high electron mobility transistors using Schottky thermometry | Cryogenic low noise amplifiers based on high electron mobility transistors
(HEMTs) are widely used in applications such as radio astronomy, deep space
communications, and quantum computing, and the physical mechanisms governing
the microwave noise figure are therefore of practical interest. In particular,
the contribut... | 2105.11571v1 |
2021-10-06 | Temperature dependent striction effect in a single crystalline Nd2Fe14B revealed using a novel high temperature resistivity measurement technique | We studied the temperature dependence of resistivity in a single crystalline
Nd2Fe14B using a newly developed high temperature probe. This novel probe uses
mechanical pin connectors instead of conducting glue/paste. From warming and
cooling curves, the Curie temperature was consistently measured around Tc = 580
K. In a... | 2110.02909v1 |
2022-11-15 | Pressure-Induced Insulator-to-Metal Transition in van der Waals compound CoPS$_3$ | We have studied the insulator-to-metal transition and crystal structure
evolution under high pressure in the van der Waals compound CoPS$_3$ through
$\textit{in-situ}$ electrical resistance, Hall resistance, magnetoresistance,
X-ray diffraction, and Raman scattering measurements. CoPS$_3$ exhibits a
$C2/m$ $\rightarrow... | 2211.07925v4 |
2020-05-03 | Resistive Switching Behaviour of Organic Molecules | Organic electronics is very promising due to the flexibility, modifiability
as well as variety of the available organic molecules. Efforts are going on to
use organic materials for the realization of memory devices. In this regard
resistive switching devices surely will play a key role. In this paper an
effort has been... | 2005.01033v1 |
2023-06-17 | An account of Natural material based Non Volatile Memory Device | The development in electronic sector has brought a remarkable change in the
life style of mankind. At the same time this technological advancement results
adverse effect on environment due to the use of toxic and non degradable
materials in various electronic devices. With the emergence of environmental
problems, the g... | 2306.10382v1 |
2016-10-10 | Determination of the resistivity anisotropy of orthorhombic materials via transverse resistivity measurements | Measurements of the resistivity anisotropy can provide crucial information
about the electronic structure and scattering processes in anisotropic and
low-dimensional materials, but quantitative measurements by conventional means
often suffer very significant systematic errors. Here we describe a novel
approach to measu... | 1610.03122v1 |
2019-08-28 | Temperature-dependent hardness of diamond-structured covalent materials | Understanding temperature-dependent hardness of covalent materials is not
only of fundamental scientific interest, but also of crucial importance for
technical applications. In this work, a temperature-dependent hardness formula
for diamond-structured covalent materials is constructed on the basis of the
dislocation th... | 1909.11032v2 |
2014-06-11 | Evidence of surface transport and weak anti-localization in single crystal of Bi2Te2Se topological insulator | Topological insulators are known to their metallic surface states, a result
of strong-spin-orbital coupling, that show unique surface transport phenomenon.
But these surface transports are buried in presence of metallic bulk
conduction. We synthesized very high quality Bi$_2$Te$_2$Se single crystals by
modified Bridgma... | 1406.2879v1 |
2019-05-29 | Growth of metallic delafossite PdCoO2 by molecular beam epitaxy | The Pd, and Pt based ABO2 delafossites are a unique class of layered,
triangular oxides with 2D electronic structure and a large conductivity that
rivals the noble metals. Here, we report successful growth of the metallic
delafossite PdCoO2 by molecular beam epitaxy (MBE). The key challenge is
controlling the oxidation... | 1905.12549v2 |
2019-06-21 | Current localisation and redistribution as the basis of discontinuous current controlled negative differential resistance in NbOx | In-situ thermo-reflectance imaging is used to show that the discontinuous,
snap-back mode of current-controlled negative differential resistance (CC-NDR)
in NbOx-based devices is a direct consequence of current localization and
redistribution. Current localisation is shown to result from the creation of a
conductive fi... | 1906.08980v2 |
2017-12-03 | Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures | We study room temperature spin transport in graphene devices encapsulated
between a layer-by-layer-stacked two-layer-thick chemical vapour deposition
(CVD) grown hexagonal boron nitride (hBN) tunnel barrier, and a few-layer-thick
exfoliated-hBN substrate. We find mobilities and spin-relaxation times
comparable to that ... | 1712.00815v1 |
2004-09-06 | Calculation of resistance for weak scattering, strong scattering and insulating quasi-one dimensional systems | A parameter free calculation of the resistivity is applied to liquid metals
near the melting point ranging from weak to strong scattering limit. The method
is based on length dependent resistance calculations for quasi-one dimensional
systems and was applied on structures with up to 10000 atoms. The calculated
value fo... | 0409131v2 |
2012-07-02 | Magneto-resistance in three-dimensional composites | In this paper we study the magneto-resistance, i.e. the second-order term of
the resistivity perturbed by a low magnetic field, of a three-dimensional
composite material. Extending the two-dimensional periodic framework of [4], it
is proved through a H-convergence approach that the dissipation energy induced
by the eff... | 1207.0468v1 |
2020-06-30 | Roadmap for Gain-Bandwidth-Product Enhanced Photodetectors | Photodetectors are key optoelectronic building blocks performing the
essential optical-to-electrical signal conversion, and unlike solar cells,
operate at a specific wavelength and at high signal or sensory speeds. Towards
achieving high detector performance, device physics, however, places a
fundamental limit of the a... | 2006.16937v1 |
2005-06-01 | Insulator-metal transition in a conservative system: An evidence for mobility coalescence in island silver films | Aging, which manifests itself as an irreversible increase in electrical
resistance in island metal films is of considerable interest from both academic
as well as applications point of view. Aging is attributed to various causes,
oxidation of islands and mobility of islands followed by coalescence (mobility
coalescence... | 0506022v2 |
2010-09-22 | Hall-effect and resistivity measurements in CdTe and ZnTe at high pressure: Electronic structure of impurities in the zincblende phase and the semi-metallic or metallic character of the high-pressure phases | We carried out high-pressure resistivity and Hall-effect measurements in
single crystals of CdTe and ZnTe up to 12 GPa. Slight changes of transport
parameters in the zincblende phase of CdTe are consitent with the shallow
character of donor impurities. Drastic changes in all the transport parameters
of CdTe were found ... | 1009.4304v1 |
2019-10-18 | Atomically Controlled Tunable Doping in High Performance WSe2 Devices | Two-dimensional transitional metal dichalcogenide (TMD) field-effect
transistors (FETs) are promising candidates for future electronic applications,
owing to their excellent transport properties and potential for ultimate device
scaling. However, it is widely acknowledged that substantial contact resistance
associated ... | 1910.08619v1 |
2004-03-23 | Systematic approach to the growth of high-quality single-crystals of Sr3Ru2O7 | We describe a simple procedure for optimising the growth condition for high
quality single crystals of the strontium ruthenate perovskites using an image
furnace. The procedure involves carefully measuring the mass lost during
crystal growth in order to predict the optimal initial atomic ratio. Using this
approach we h... | 0403572v1 |
2022-03-22 | High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K | The magnetoresistance (MR) and the magnetization isotherms were studied up to
high magnetic fields at T = 3 K and 300 K for a microcrystalline ($\mu$c) Ni
foil corresponding to bulk Ni and for a nanocrystalline (nc) Ni foil. At T = 3
K, for the $\mu$c-Ni sample with a residual resistivity ratio (RRR) of 331, the
field ... | 2203.11568v1 |
2023-09-18 | Theoretical analysis on the possibility of superconductivity in a trilayer Ruddlesden-Popper nickelate La$_4$Ni$_3$O$_{10}$ under pressure and its experimental examination: comparison with La$_3$Ni$_2$O$_7$ | We study the possibility of superconductivity in a trilayer Ruddlesden-Popper
nickelate La$_4$Ni$_3$O$_{10}$ under pressure both theoretically and
experimentally, making comparison with the recently discovered high $T_c$
superconductor La$_3$Ni$_2$O$_7$, a bilayer nickelate. Through DFT
calculations, we find that a str... | 2309.09462v4 |
2019-07-16 | Pressure-Induced Large Volume Collapse, Plane-to-Chain, Insulator to Metal Transition in CaMn$_2$Bi$_2$ | In-situ high pressure single crystal X-ray diffraction study reveals that the
quantum material CaMn$_2$Bi$_2$ undergoes a unique plane to chain structural
transition between 2 and 3 GPa, accompanied by a large volume collapse.
CaMn2Bi2 displays a new structure type above 2.3 GPa, with the puckered Mn
honeycomb lattice ... | 1907.07203v1 |
2014-10-09 | Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2 | Low-resistivity metal-semiconductor (M-S) contact is one of the urgent
challenges in the research of 2D transition metal dichalcogenides (TMDs). Here,
we report a chloride molecular doping technique which greatly reduces the
contact resistance (Rc) in the few-layer WS2 and MoS2. After doping, the Rc of
WS2 and MoS2 hav... | 1410.2563v1 |
2021-04-08 | Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon | We present a superconductor-semiconductor material system that is both
scalable and monolithically integrated on a silicon substrate. It uses
selective area growth of Al-InAs hybrid structures on a planar III-V buffer
layer, grown directly on a high resistivity silicon substrate. We characterized
the electrical propert... | 2104.03621v1 |
2021-09-21 | Strain effects on the wear rate of severely deformed copper | A variety of severe plastic deformation (SPD) techniques have been developed
to process materials to high strains and impart microstructural refinement.
High pressure torsion (HPT) is one technique that imparts inhomogeneous strain
to process discs with low strain in the center and high strain at the outer
edge. In the... | 2109.09907v1 |
2016-07-07 | Lithium transport through Lithium-ion battery cathode coatings | The surface coating of cathodes using insulator films has proven to be a
promising method for high-voltage cathode stabilization in Li-ion batteries.
However, there is still substantial uncertainty about how these films function,
specifically with regard to important coating design principles such as lithium
solubility... | 1607.02125v1 |
2023-04-20 | An Origami-Inspired Design of Highly Efficient Cellular Cushion Materials | Current architectured cellular cushion materials rely mainly on damage and/or
unpredictable collapse of their unit cells to absorb and dissipate energy under
impact. This prevents shape recovery and produces undesirable force
fluctuations that limit reusability and reduce energy absorption efficiency.
Here, we propose ... | 2304.10238v1 |
2024-01-28 | Discharge quenching mechanism and performance of RPWELL with tunable 3D printed resistive plates, charge evacuation in semiconductive glass RPWELL and discharge quenching for Cryogenic-RWELL over a wide range of resistivity | Resistive electrodes are used in gaseous detectors to quench electrical
discharges. This helps to protect delicate electrodes and readout electronics
and to improve the stability of the detector operation. An RPWELL is a
THGEM-based WELL detector with a resistive plate coupled to a conductive anode.
Till now, the choic... | 2401.15611v2 |
2009-09-25 | Electric field-induced colossal electroresistance and its relaxation in multiferroic La2NiMnO6 | In this work, we report direct as well as pulsed electric field-induced
resistivity switching and its relaxation in a multiferroic insulator La2NiMnO6.
At a fixed base temperature (Tb), the dc resistivity switches abruptly from a
high to a low value, which is manifested as an upward jump in the dc current
density (J) w... | 0909.4612v1 |
2022-07-10 | Diffusion theory of electrical contact resistance of "thermoelectric superlattice metal" couple | The paper proposes a strict diffusion theory of the electrical contact
resistance of a thermoelectric superlattice (TES) - metal couple.The limits of
the contact resistance for traditional thermoeletric materials with parabolic
band spectrum and for superlattices described by Fivaz model are estimated. | 2207.05065v1 |
2018-01-30 | Open Material Property Library With Native Simulation Tool Integrations -- MASTO | Reliable material property data is crucial for trustworthy simulations
throughout different areas of engineering. Special care must be taken when
materials at extreme conditions are under study. Superconductors and devices
assembled from superconductors and other materials, like superconducting
magnets, are often opera... | 1801.09897v1 |
2018-11-22 | Chemical vapor deposition of hexagonal boron nitride and its use in electronic devices | Dielectrics are insulating materials used in many different electronic
devices and play an important role in all of them. Current advanced electronic
devices use dielectric materials with a high dielectric constant and avoid high
leakage currents. However, these materials show several intrinsic problems, and
also a bad... | 1905.06938v1 |
2020-04-14 | Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory | As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering
great interest as the next-generation low-power and high-speed on-chip cache
memory applications, it is critical to analyze the magnetic tunnel junction
(MTJ) properties needed to achieve sub-ns, and ~fJ write operation when
integrated with CMOS... | 2004.06268v2 |
2022-04-28 | Degradation model of high-nickel positive electrodes: Effects of loss of active material and cyclable lithium on capacity fade | Nickel-rich layered oxides have been widely used as positive electrode
materials for high-energy-density lithium-ion batteries, but their degradation
has severely affected cell performance, in particular at a high voltage and
temperature. However, the underlying degradation mechanisms have not been well
understood due ... | 2204.13364v2 |
2019-02-26 | Data-driven Exploration of Pressure-Induced Superconductivity in AgIn$_{5}$Se$_{8}$ | Candidates compounds for new thermoelectric and superconducting materials,
which have narrow band gap and flat bands near band edges, were exhaustively
searched by a high-throughput first-principles calculation from an inorganic
materials database named AtomWork. We focused on AgIn$_{5}$Se$_{8}$ which has
high density ... | 1902.09770v1 |
2020-06-25 | Influence of Yb3+on the structural, electrical and optical properties of sol-gel synthesized Ni-Zn nanoferrites | Polycrystalline Yb substituted NiZn nanoferrites with the compositions of
Ni0.5Zn0.5YbxFe2-xO4 (x= 0.00, 0.04, 0.08, 0.12, 0.16 and 0.20) have been
synthesized using sol gel auto combustion technique. Single phase cubic spinel
structure has been confirmed by the X ray diffraction (XRD) patterns. Larger
lattice constant... | 2006.14180v1 |
2024-04-12 | Electron-phonon interaction, magnetic phase transition, charge density waves and resistive switching in VS2 and VSe2 revealed by Yanson point contact spectroscopy | VS2 and VSe2 have attracted particular attention among the transition metals
dichalcogenides because of their promising physical properties concerning
magnetic ordering, charge density wave (CDW), emergent superconductivity, etc.,
which are very sensitive to stoichiometry and dimensionality reduction. Yanson
point cont... | 2404.08269v1 |
2010-11-12 | Large bulk resistivity and surface quantum oscillations in the topological insulator Bi2Te2Se | Topological insulators are predicted to present novel surface transport
phenomena, but their experimental studies have been hindered by a metallic bulk
conduction that overwhelms the surface transport. We show that a new
topological insulator, Bi2Te2Se, presents a high resistivity exceeding 1 Ohm-cm
and a variable-rang... | 1011.2846v1 |
2017-02-14 | Modelling electron-phonon interactions in graphene with curved space hydrodynamics | We introduce a different perspective describing electron-phonon interactions
in graphene based on curved space hydrodynamics. Interactions of phonons with
charge carriers increase the electrical resistivity of the material. Our
approach captures the lattice vibrations as curvature changes in the space
through which ele... | 1702.04156v1 |
2019-10-31 | Vorticity of viscous electronic flow in graphene | In ultra-pure materials electrons may exhibit a collective motion similar to
the hydrodynamic flow of a viscous fluid, the phenomenon with far reaching
consequences in a wide range of many body systems from black holes to
high-temperature superconductivity. Yet the definitive detection of this
intriguing behavior remai... | 1910.14473v2 |
2021-11-09 | Magnetotransport in ferromagnetic Fe$_2$Ge semimetallic thin films | Thin films of the ferromagnet Fe$_2$Ge were grown via molecular beam epitaxy,
and their electrical and magneto-transport properties measured for the first
time. X-ray diffraction and vibrating sample magnetometry measurements
confirmed the crystalline ferromagnetic Fe$_2$Ge phase. The observed high
temperature maximum ... | 2111.05417v1 |
2022-01-18 | In-plane magnetic structure and exchange interactions in the high-temperature antiferromagnet Cr2Al | The ordered tetragonal intermetallic Cr$_2$Al forms the same structure type
as Mn$_2$Au, and the latter has been heavily investigated for its potential in
antiferromagnetic spintronics due to its degenerate in-plane N\'{e}el vector.
We present the single crystal flux growth of Cr$_2$Al and orientation-dependent
magneti... | 2201.07356v1 |
2024-03-26 | Large topological Hall effect arising from spin reorientation in kagome magnet Fe3Ge | Materials systems with spin chirality can provide ultra-high-density,
ultra-fast, and ultralow-power information carriers for digital transformation.
These material systems include magnetic skyrmions, chiral domain walls, spin
reorientation,and so on. The topological Hall effect (THE) has been identified
as the most co... | 2403.17354v1 |
2022-08-23 | Anomalous electrical transport and magnetic skyrmions in Mn-tuned Co9Zn9Mn2 single crystals | \b{eta}-Mn-type CoxZnyMnz (x + y + z = 20) alloys have recently attracted
increasing attention as a new class of chiral magnets with skyrmions at and
above room temperature. However, experimental studies on the transport
properties of this material are scarce. In this work, we report the successful
growth of the \b{eta... | 2208.10955v1 |
2007-08-31 | Fundamental Constants | The notion of ``fundamental constant'' is heavily theory-laden. A natural,
fairly precise formulation is possible in the context of the standard model
(here defined to include gravity). Some fundamental constants have profound
geometric meaning. The ordinary gravitational constant parameterizes the
stiffness, or resist... | 0708.4361v1 |
2014-02-10 | Tuning the band gap of PbCrO4 through high-pressure: Evidence of wide-to-narrow semiconductor transitions | The electronic transport properties and optical properties of lead(II)
chromate (PbCrO4) have been studied at high pressure by means of resistivity,
Hall-effect, and optical-absorption measurements. Band-structure
first-principle calculations have been also performed. We found that the
low-pressure phase is a direct ba... | 1402.2139v1 |
2015-08-11 | Pressure induced electronic topological transition in Sb2S3 | Pressure induced electronic topological transitions in the wide band gap
semiconductor Sb2S3 (Eg = 1.7-1.8 eV) with similar crystal symmetry (SG: Pnma)
to its illustrious analog, Sb2Se3, has been studied using Raman spectroscopy,
resistivity and the available literature on the x-ray diffraction studies. In
this report,... | 1508.02516v1 |
2018-11-19 | Room-temperature Low-field Colossal Magneto-resistance in Double-perovskite Manganite | The gigantic decrease of resistance by an applied magnetic field, which is
often referred to as colossal magnetoresistance (CMR), has been an attracting
phenomenon in strongly correlated electron systems. The discovery of CMR in
manganese oxide compounds has developed the science of strong coupling among
charge, orbita... | 1811.07596v1 |
2018-10-17 | Perspectives of HgTe Topological Insulators for Quantum Hall Metrology | We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with
a width close to the critical one $d_c$, corresponding to the topological phase
transition and graphene like band structure in view of their applications for
Quantum Hall Effect (QHE) resistance standards. We show that in the case of
inverted... | 1810.07449v1 |
2019-07-25 | Reducing sheet resistance of self-assembled transparent graphene films by defect patching and doping with UV/ozone treatment | Liquid phase exfoliation followed by Langmuir-Blodgett self-assembly (LBSA)
is a promising method for scalable production of thin graphene films for
transparent conductor applications. However, monolayer assembly into thin films
often induces a high density of defects, resulting in a large sheet resistance
that hinders... | 1907.10916v2 |
2019-10-17 | Link between magnetism and resistivity upturn in cuprates: a thermal conductivity study of La$_{2-x}$Sr$_x$CuO$_4$ | A key unexplained feature of cuprate superconductors is the upturn in their
normal state electrical resistivity $\rho(T)$ seen at low temperature inside
the pseudogap phase. We examined this issue via measurements of the thermal
conductivity $\kappa(T)$ down to 50 mK and in fields up to 17 T on the cuprate
La$_{2-x}$Sr... | 1910.08126v1 |
2021-08-18 | High Entropy Alloy CrFeNiCoCu sputtered films | High entropy alloy(HEA) films of CrFeCoNiCu were prepared by sputtering,
their structure was characterized, and their electric properties measured by
temperature dependent Hall and Seebeck measurement. The HEA films show a solid
solution with fcc structure, and a 111 texture with columnar grains of widths
15-30 nm exte... | 2108.08373v2 |
2022-05-03 | Structural and electronic phase transitions in Zr$_{1.03}$Se$_{2}$ at high pressure | A detailed high pressure investigation is carried out using x-ray
diffraction, Raman spectroscopy and low temperature resistivity measurements on
hexagonal ZrSe$_{2}$ having an excess of 3 at.\% Zr. Structural studies show
that the sample goes through a gradual structural transition from hexagonal to
monoclinic phase, ... | 2205.01322v1 |
2022-06-08 | Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi2Te4 thin films | The intrinsic magnetic topological insulator MnBi2Te4 provides a feasible
pathway to high temperature quantum anomalous Hall (QAH) effect as well as
various novel topological quantum phases. Although quantized transport
properties have been observed in exfoliated MnBi2Te4 thin flakes, it remains a
big challenge to achi... | 2206.03773v2 |
2022-07-23 | Anomalous resistivity upturn in the van der Waals ferromagnet Fe$_5$GeTe$_2$ | Fe$_5$GeTe$_2$ (n = 3, 4, 5) have recently attracted increasing attention due
to their two-dimensional van der Waals characteristic and high temperature
ferromagnetism, which make promises for spintronic devices. The Fe(1) split
site is one important structural characteristic of Fe$_5$GeTe$_2$ which makes
it very diffe... | 2207.11383v1 |
2000-09-21 | High-pressure study of the non-Fermi liquid material U_2Pt_2In | The effect of hydrostatic pressure (p<= 1.8 GPa) on the non-Fermi liquid
state of U_2Pt_2In is investigated by electrical resistivity measurements in
the temperature interval 0.3-300 K. The experiments were carried out on
single-crystals with the current along (I||c) and perpendicular (I||a) to the
tetragonal axis. The... | 0009324v1 |
2002-04-19 | Spin-injection through an Fe/InAs Interface | The spin-dependence of the interface resistance between ferromagnetic Fe and
InAs is calculated from first-principles for specular and disordered (001)
interfaces. Because of the symmetry mismatch in the minority-spin channel, the
specular interface acts as an efficient spin filter with a transmitted current
polarisati... | 0204422v1 |
2002-10-01 | Free and Trapped Injected Carriers in C60 Crystals | We report on the conductance from two-contact carrier injection in C60 single
crystals. In the nonlinear regime, the current and voltage obey a power law, I
\~ V^m, where m can be as high as 10 at room temperature. This nonlinear
behavior - the resistance decreases by 6 orders of magnitude without saturation
- is among... | 0210029v1 |
2003-02-03 | Critical Current Density and Resistivity of MgB2 Films | The high resistivity of many bulk and film samples of MgB2 is most readily
explained by the suggestion that only a fraction of the cross-sectional area of
the samples is effectively carrying current. Hence the supercurrent (Jc) in
such samples will be limited by the same area factor, arising for example from
porosity o... | 0302017v1 |
2003-03-19 | Structural and Electronic Properties of Amorphous and Polycrystalline In2Se3 Films | Structural and electronic properties of amorphous and single-phase
polycrystalline films of gamma- and kappa-In2Se3 have been measured. The stable
gamma phase nucleates homogeneously in the film bulk and has a high
resistivity, while the metastable kappa phase nucleates at the film surface and
has a moderate resistivit... | 0303369v1 |
2003-04-16 | Initial dissipation and current-voltage characteristics of superconductors containing fractal clusters of a normal phase | The influence of fractal clusters of a normal phase on distinctive features
of current-voltage characteristic of percolative type-II superconductors is
considered. The results of high-resolution measurements of the differential
resistance of BPSCCO/Ag composites are discussed in the context of magnetic
flux dynamics. T... | 0304354v2 |
2003-12-12 | Electronic behavior in mats of single-walled carbon nanotubes under pressure | Single-walled carbon nanotubes (SWNTs) have many interesting properties; they
may be metallic or semiconducting depending on their diameter and helicity of
the graphene sheet. Hydrostatic or quasi-hydrostatic high pressures can probe
many electronic features. Resistance - temperature measurements in SWNTs from
normal c... | 0312307v1 |
2004-08-12 | Impedance spectroscopy study on post-annealing-tuned polycrystalline CaCu3Ti4O12 films: Evidence of Barrier Layer Capacitor Effects | In this paper, impedance spectroscopy study was performed to establish the
electrical property and microstructure relations of the as-deposited and
post-annealed polycrystalline CCTO films prepared on Pt/Ti/SiO2/Si (100)
substrates by pulsed-laser deposition (PLD). Our results demonstrated that the
as-deposited polycry... | 0408275v2 |
2004-12-03 | Resistance noise scaling in a 2D system in GaAs | The 1/f resistance noise of a two-dimensional (2D) hole system in a high
mobility GaAs quantum well has been measured on both sides of the 2D
metal-insulator transition (MIT) at zero magnetic field (B=0), and deep in the
insulating regime. The two measurement methods used are described: I or V
fixed, and measurement of... | 0412084v1 |
2005-10-21 | Superconductivity mediated by a soft phonon mode: specific heat, resistivity, thermal expansion and magnetization of YB6 | The superconductor YB6 has the second highest critical temperature Tc among
the boride family MBn. We report measurements of the specific heat,
resistivity, magnetic susceptibility and thermal expansion from 2 to 300 K,
using a single crystal with Tc = 7.2 K. The superconducting gap is
characteristic of medium-strong c... | 0510572v3 |
2006-03-31 | Evidences of a consolute critical point in the Phase Separation regime of La(5/8-y)Pr(y)Ca(3/8)MnO(3) (y = 0.4) single crystals | We report on DC and pulsed electric field sensitivity of the resistance of
mixed valent Mn oxide based La(5/8-y)Pr(y)Ca(3/8)MnO(3) (y = 0.4) single
crystals as a function of temperature. The low temperature regime of the
resistivity is highly current and voltage dependent. An irreversible transition
from high (HR) to a... | 0603850v1 |
2007-06-29 | NMR relaxation and resistivity from rattling phonons in pyrochlore superconductors | We calculate the temperature dependence of NMR relaxation rate and electrical
resistivity for coupling to a local, strongly anharmonic phonon mode. We argue
that the two-phonon Raman process is dominating NMR relaxation. Due to the
strong anharmonicity of the phonon an unusual temperature dependence is found
having a l... | 0706.4345v2 |
2007-07-04 | NaV2O4: a Quasi-1D Metallic Antiferromagnet with Half-Metallic Chains | NaV2O4 crystals were grown under high pressure using a NaCl flux, and the
crystals were characterized with X-ray diffraction, electrical resistivity,
heat capacity, and magnetization. The structure of NaV2O4 consists of double
chains of edge-sharing VO6 octahedra. The resistivity is highly anisotropic,
with the resisti... | 0707.0519v3 |
2007-09-11 | Transport properties and magnetic field induced localization in the misfit cobaltite [Bi$_2$Ba$_{1.3}$K$_{0.6}$Co$_{0.1}$]$^{RS}$[CoO$_2$]$_{1.97}$ single crystal | Resistivity under magnetic field, thermopower and Hall coefficient are
systematically studied for
[Bi$_2$Ba$_{1.3}$K$_{0.6}$Co$_{0.1}$]$^{RS}$[CoO$_2$]$_{1.97}$ single crystal.
In-plane resistivity ($\rho_{ab}$(T)) shows metallic behavior down to 2 K with
a $T^2$ dependence below 30 K; while out-of-plane resistivity ($... | 0709.1519v1 |
2007-11-29 | Magnetoelectric Effects on Composite Nano Granular $Fe/TiO_{2-δ}$ Films | Employing a new experimental technique to measure magnetoelectric response
functions, we have measured the magnetoelectric effect in composite films of
nano granular metallic iron in anatase titanium dioxide at temperatures below
50 K. A magnetoelectric resistance is defined as the ratio of a transverse
voltage to bias... | 0711.4776v1 |
2009-04-23 | Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films | We report a direct observation of the microscopic origin of the bipolar
resistive switching behavior in nanoscale titanium oxide films. Through a
high-resolution transmission electron microscopy, an analytical TEM technique
using energy-filtering transmission electron microscopy and an in situ x-ray
photoelectron spect... | 0904.3628v2 |
2009-08-25 | Bipolar resistive switching characteristics of poly(3,4-ethylene-dioxythiophene): poly(styrenesulfonate) thin film | We investigated the reversible resistive switching of
poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) thin films
sandwiched between Al electrodes. The J-V sweep curve showed a hysteretic
behavior which depends on the polarity of the applied voltage bias. From the
analysis of I-V curves, it was reveale... | 0908.3527v1 |
2010-02-02 | Memristor Behaviour in Nano-Sized Vertical Lsmo/Lsmo Tunnel Junctions | We report a memory resistance (memristor) behavior with nonlinear
current-voltage characteristics and bipolar hysteretic resistance switching in
the nanocolumnar manganite (LSMO) films. The switching from a high (HRS) to a
low (LRS) resistance occurs at a bias field ~1 MV/cm. Applied electric field
drops mostly at the ... | 1002.0495v1 |
2010-02-11 | Synthesis, anisotropy, and superconducting properties of LiFeAs single crystal | A LiFeAs single crystal with $T_c^{onset}$$\sim$19.7 K was grown successfully
in a sealed tungsten crucible using the Bridgeman method. The electrical
resistivity experiments revealed a ratio of room temperature to residual
resistivity (RRR) of approximately 46 and 18 for the in-plane and out-of plane
directions. The e... | 1002.2249v1 |
2010-07-15 | Role of interface reaction on resistive switching of Metal/a-TiO2/Al RRAM devices | For the clear understanding of the role of interface reaction between top
metal electrode and titanium oxide layer, we investigated the effects of
various top metals on the resistive switching in Metal/a-TiO2/Al devices. The
top Al device with the highest oxygen affinity showed the best memory
performance, which is att... | 1007.2463v1 |
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