publicationDate
stringlengths
10
10
title
stringlengths
17
233
abstract
stringlengths
20
3.22k
id
stringlengths
9
12
2016-04-25
Anisotropic transport and optical spectroscopy study on antiferromagentic triangular lattice EuCd_2As_2: an interplay between magnetism and charge transport properties
We present anisotropic transport and optical spectroscopy studies on EuCd_2As_2. The measurements reveal that EuCd_2As_2 is a low carrier density semimetal with moderate anisotropic resistivity ratio. The charge carriers experience very strong scattering from Eu magnetic moments, resulting in a Kondo-like increase of r...
1604.07114v2
2016-04-26
Multiband effects and the possible Dirac states in LaAgSb$_2$
Here we report the possible signature of Dirac fermions in the magnetoresistance, Hall resistivity and magnetothermopower of LaAgSb$_2$. The opposite sign between Hall resistivity and Seebeck coefficient indicates the multiband effect. Electronic structure calculation reveals the existence of the linear bands and the p...
1604.07819v1
2016-04-27
Superconductivity at 7.8 K in the ternary LaRu2As2 compound
Here we report the discovery of superconductivity in the ternary LaRu2As2 compound. The polycrystalline LaRu2As2 samples were synthesized by the conventional solid state reaction method. Powder X-ray diffraction analysis indicates that LaRu2As2 crystallizes in the ThCr2Si2-type crystal structure with the space group I4...
1604.07958v1
2016-06-02
First-principles calculation of the stabilities of lithium garnet compositions against hydration
A series of density functional electronic structure calculations were carried out to better understand the crystallographic factors governing the stability of LinA3B2O12 lithium garnet phases against hydration. The reaction studied is H2O + LinA3B2O12 = LiOH + HnA3B2O12. Most of the compositions are stable against pure...
1606.01807v1
2016-06-07
The temperature dependence of FeRh's transport properties
The finite-temperature transport properties of FeRh compounds are investigated by first-principles Density Functional Theory-based calculations. The focus is on the behavior of the longitudinal resistivity with rising temperature, which exhibits an abrupt decrease at the metamagnetic transition point, $T = T_m$ between...
1606.02072v1
2016-06-21
Bad-Metal Relaxation Dynamics in a Fermi Lattice Gas
We report the discovery of phenomena consistent with bad-metal relaxation dynamics in the metallic regime of an optical-lattice Hubbard model. The transport lifetime induced by inter-particle scattering for a mass current of atoms excited by stimulated Raman transitions is measured, and the corresponding analog of resi...
1606.06669v5
2016-07-11
The modification of the pore characteristics of activated carbon, for use in electrical double layer capacitors, through plasma processing
It was aimed to determine whether plasma processing could contribute to enhanced capacitance and energy density of activated carbon electrode based electrochemical capacitors, through the formation of additional surface charges. While an increase of up to 35% of the gravimetric capacitance, along with ~ 20% decrease in...
1607.03201v1
2016-07-15
Chiral Phonons and Electrical Resistivity of Ferromagnetic Metals at Low Temperatures
Ferromagnetism is an exciting phase of matter exhibiting strongly correlated electron behavior and a standard example of spontaneously broken rotational symmetry: below the Curie temperature, atomic magnets in an isotropic single-domain ferromagnetic metal align along a spontaneously chosen direction. The scattering of...
1607.04585v2
2016-11-01
Boundary conditions and heat resistance at the moving solid--liquid interface
Boundary conditions for the solid-liquid interface of the solidifying pure melt have been derived. In the derivation the model of Gibbs interface is used. The boundary conditions include both the state quantities of bulk phases are taken at the interface and the quantities characterizing interfacial surface such as the...
1611.00160v1
2017-06-01
Edge transport in InAs and InAs/GaSb quantum wells
We investigate low-temperature transport through single InAs quantum wells and broken-gap InAs/GaSb double quantum wells. Non-local measurements in the regime beyond bulk pinch-off confirm the presence of edge conduction in InAs quantum wells. The edge resistivity of 1-2 $\mathrm{k\Omega/\mu m}$ is of the same order of...
1706.00320v1
2017-09-21
Zero-Field Quantum Critical Point in Ce$_{0.91}$Yb$_{0.09}$CoIn$_5$
We present results of specific heat, electrical resistance, and magnetoresistivity measurements on single crystals of the heavy-fermion superconducting alloy Ce$_{0.91}$Yb$_{0.09}$CoIn$_5$. Non-Fermi liquid to Fermi liquid crossovers are clearly observed in the temperature dependence of the Sommerfeld coefficient $\gam...
1709.07161v3
2017-12-01
Titanium Contacts to Graphene: Process-Induced Variability in Electronic and Thermal Transport
Contact Resistance (RC) is a major limiting factor in the performance of graphene devices. RC is sensitive to the quality of the interface and the composition of the contact, which are affected by the graphene transfer process and contact deposition conditions. In this work, a linear correlation is observed between the...
1712.00331v1
2017-12-04
Particle-hole symmetry reveals failed superconductivity in the metallic phase of two-dimensional superconducting films
Electrons confined to two dimensions display an unexpected diversity of behaviors as they are cooled to absolute zero. Noninteracting electrons are predicted to eventually "localize" into an insulating ground state, and it has long been supposed that electron correlations stabilize only one other phase: superconductivi...
1712.00947v1
2018-01-15
A study of electron and thermal transport in layered Titanium disulphide single crystals
We present a detailed study of thermal and electrical transport behavior of single crystal Titanium disulphide flakes, which belongs to the two dimensional, transition metal dichalcogenide class of materials. In-plane Seebeck effect measurements revealed a typical metal-like linear temperature dependence in the range o...
1801.04677v1
2018-02-23
Possible charge-density-wave signatures in the anomalous resistivity of Li-intercalated multilayer MoS2
We fabricate ion-gated field-effect transistors (iFET) on mechanically exfoliated multilayer MoS$_2$. We encapsulate the flake by Al$_2$O$_3$, leaving the device channel exposed at the edges only. A stable Li$^+$ intercalation in the MoS$_2$ lattice is induced by gating the samples with a Li-based polymeric electrolyte...
1802.08449v2
2018-03-13
Are thermal fluctuations the sole reason for finite longitudinal resistance in quantum anomalous Hall experiments?
In some recent experiments [A. J. Bestwick, et. al., Phys. Rev. Lett. 114, 187201 (2015), Cui-Zu Chang, et. al., Nat. Materials. 14, 473-477 (2015)] it has been shown that in observations of the quantum anomalous Hall (QAH) effect the longitudinal resistance $R_L$ increases as temperature $T$ increases, while Hall resi...
1803.04995v2
2018-03-21
Bad metallic transport in a modified Hubbard model
Strongly correlated metals often display anomalous transport, including $T$-linear resistivity above the Mott-Ioffe-Regel limit. We introduce a tractable microscopic model for such bad metals, by supplementing the well-known Hubbard model --- with hopping $t$ and on-site repulsion $U$ --- with a `screened Coulomb' inte...
1803.08054v3
2018-04-06
Energy-Quality Scaling in Analog Mesh Computers
The recent push for post-Moore computer architectures has introduced a wide variety of application-specific accelerators. One particular accelerator, the resistance network analogue, has been well received due to its ability to efficiently solve partial differential equations by eliminating the iterative stages require...
1804.02389v2
2018-04-28
Nonequilibrium Mean-Field Theory of Resistive Phase Transitions
We investigate the quantum mechanical origin of resistive phase transitions in solids driven by a constant electric field in the vicinity of a metal-insulator transition. We perform a nonequilibrium mean-field analysis of a driven-dissipative anti-ferromagnet, which we solve analytically for the most part. We find that...
1804.10733v1
2018-09-24
Fusion Between Frozen-Wave-Type Beams and Airy-Type Pulses: Diffraction-Dispersion-Attenuation Resistant Vortex Pulses in Absorbing Media
In this paper we perform a fusion between two important theoretical methodologies, one related to the Frozen Wave beams, which are non-diffracting beams whose longitudinal intensity pattern can be chosen a priori in an medium (absorbing or not), and the other related to the Airy-Type pulses, which are pulses resistant ...
1809.08740v1
2018-11-28
Investigation of effective thermoelectric properties of composite with interfacial resistance using micromechanics-based homogenisation
We obtained the analytical expression for the effective thermoelectric properties and dimensionless figure of merit of a composite with interfacial electrical and thermal resistances using a micromechanics-based homogenisation. For the first time, we derived the Eshelby tensor for a spherical inclusion as a function of...
1811.11340v2
2019-05-13
Quantum Oscillations of Electrical Resistivity in an Insulator
In metals, orbital motions of conduction electrons on the Fermi surface are quantized in magnetic fields, which is manifested by quantum oscillations in electrical resistivity. This Landau quantization is generally absent in insulators. Here we report a notable exception in an insulator, ytterbium dodecaboride (YbB12)....
1905.05140v1
2019-09-27
Magnetoresistance effects in the metallic antiferromagnet Mn$_2$Au
In antiferromagnetic spintronics, it is essential to separate the resistance modifications of purely magnetic origin from other effects generated by current pulses intended to switch the N\'eel vector. We investigate the magnetoresistance effects resulting from magnetic field induced reorientations of the staggered mag...
1909.12606v3
2020-03-22
Monitoring of the formation of strontium molybdate intergrain tunneling barriers in strontium ferromolybdate
This work is a contribution to the understanding of the electrical resistivity in strontium ferromolybdate (SFMO) ceramics. It demonstrates that an appropriate thermal treatment leads to the formation of dielectric SrMoO4 shells at the surface of SFMO nanograins. In samples without SrMoO4 shells, the sign of the temper...
2003.09997v1
2014-08-15
Correlation between electrical and magnetic properties of phase separated manganites studied with a General Effective Medium model
We have performed electrical resistivity and DC magnetization measurements as a function of temperature, on polycrystalline samples of phase separated LaPrCaMnO. We have used the General Effective Medium Theory to obtain theoretical resistivity vs. temperature curves corresponding to different fixed ferromagnetic volum...
1408.3599v1
2014-08-28
Room temperature giant baroresistance and magnetoresistance and its tunability in Pd doped FeRh
We report room temperature giant baro-resistance ($\approx$128\%) in $Fe_{49}(Rh_{0.93}Pd_{0.07})_{51}$. With the application of external pressure and magnetic field the temperature range of giant baro-resistance ($\approx$600\% at 5K and 19.9 kbar and 8 Tesla) and magnetoresistance ($\approx$-85\% at 5K and 8 tesla) c...
1408.6688v1
2017-01-18
Iron-based superconductivity extended to the novel silicide LaFeSiH
We report the synthesis and characterization of the novel silicide LaFeSiH displaying superconductivity with onset at 11 K. We find that this pnictogen-free compound is isostructural to LaFeAsO, with a similar low-temperature tetragonal to orthorhombic distortion. Using density functional theory we show that this syste...
1701.05010v3
2017-03-09
Oxygen migration during resistance switching and failure of hafnium oxide memristors
While the recent establishment of the role of thermophoresis/diffusion-driven oxygen migration during resistance switching in metal oxide memristors provided critical insights required for memristor modeling, extended investigations of the role of oxygen migration during ageing and failure remain to be detailed. Such d...
1703.03106v1
2018-10-09
Electron scattering by short range defects and resistivity of graphene
The electron scattering by the short-range defects in the monolayer graphene is considered in the framework of the flatland model. We analyze the effect of this scattering on the electronic resistivity of the monolayer graphene (direct problem) and develop a procedure for determination of the defect potential from resi...
1810.03897v1
2018-10-16
Studies of two-dimensional MoS2 on enhancing the electrical performance of ultrathin copper films
Copper nanowires are widely used as on-chip interconnects due to superior conductivity. However, with aggressive Cu interconnect scaling, the diffusive surface scattering of electrons drastically increases the electrical resistivity. In this work, we studied the electrical performance of Cu thin films on different mate...
1810.06772v1
2019-02-01
Graph Resistance and Learning from Pairwise Comparisons
We consider the problem of learning the qualities of a collection of items by performing noisy comparisons among them. Following the standard paradigm, we assume there is a fixed "comparison graph" and every neighboring pair of items in this graph is compared $k$ times according to the Bradley-Terry-Luce model (where t...
1902.00141v2
2019-02-06
AlGaN /GaN superlattice based p-channel field effect transistor (pFET) with TMAH treatment
To realize the full spectrum of advantages that the III-nitride materials system offers, the demonstration of p-channel III-nitride based devices is valuable. Authors report the first p-type field effect transistor (pFET) based on an AlGaN/GaN superlattice (SL), grown using MOCVD. Magnesium was used as the p-type dopan...
1902.02022v2
2019-02-26
Au-Ge alloys for wide-range low-temperature on-chip thermometry
We present results of a Au-Ge alloy that is useful as a resistance-based thermometer from room temperature down to at least \SI{0.2}{\kelvin}. Over a wide range, the electrical resistivity of the alloy shows a logarithmic temperature dependence, which simultaneously retains the sensitivity required for practical thermo...
1902.10111v2
2019-07-11
DC Electrical Degradation of YSZ: Voltage Controlled Electrical Metallization of A Fast Ion Conducting Insulator
DC electrical degradation as a form of dielectric and resistance breakdown is a common phenomenon in thin-film devices including resistance-switching memory. To obtain design data and to probe the degradation mechanism, highly accelerated lifetime tests (HALT) are often conducted at higher temperatures with thicker sam...
1907.05479v2
2020-02-17
Transport mechanism in amorphous molybdenum silicide thin films
Amorphous molybdenum silicide compounds have attracted significant interest for potential device applications, particularly in single-photon detector. In this work, the temperature-dependent resistance and magneto-resistance behaviors were measured to reveal the charge transport mechanism, which is of great importance ...
2002.06884v3
2020-09-17
Restored strange metal phase through suppression of charge density waves in underdoped YBa$_2$Cu$_3$O$_{7-δ}$
The normal state of optimally doped cuprates is dominated by the "strange metal" phase that shows a linear temperature ($T$) dependence of the resistivity persisting down to the lowest $T$. For underdoped cuprates this behavior is lost below the pseudogap temperature $T^*$, where Charge Density Waves (CDW) together wit...
2009.08398v3
2007-10-03
The effect of ozone oxidation on single-walled carbon nanotubes
Exposing single-walled carbon nanotubes to room temperature UV-generated ozone leads to an irreversible increase in their electrical resistance. We demonstrate that the increased resistance is due to ozone oxidation on the sidewalls of the nanotubes rather than at the end caps. Raman and x-ray photoelectron spectroscop...
0710.0803v1
2012-01-13
Intermediate state switching dynamics in magnetic double layer nanopillars grown by molecular beam epitaxy
We observe a stable intermediate resistance switching state in the current perpendicular to plane geometry for all Co/Cu/Co double layer nanopillar junctions grown by molecular beam epitaxy. This novel state has a resistance between the resistances of the parallel and antiparallel alignment of both Co-layer magnetizati...
1201.2752v1
2012-01-14
Length dependence of the resistance in graphite: Influence of ballistic transport
Using a linear array of voltage electrodes with a separation of several micrometers on a $20 $nm thick and 30 $\mu$m long multigraphene sample we show that the measured resistance does not follow the usual length dependence according to Ohm's law. The deviations can be quantitatively explained taking into account Sharv...
1201.3004v1
2012-01-14
Temperature dependence of the thermal boundary resistivity of glass-embedded metal nanoparticles
The temperature dependence of the thermal boundary resistivity is investigated in glass-embedded Ag particles of radius 4.5 nm, in the temperature range from 300 to 70 K, using all-optical time-resolved nanocalorimetry. The present results provide a benchmark for theories aiming at explaining the thermal boundary resis...
1201.3034v1
2014-01-07
Images of edge current in InAs/GaSb quantum wells
Quantum spin Hall devices with edges much longer than several microns do not display ballistic transport: that is, their measured conductances are much less than $e^2/h$ per edge. We imaged edge currents in InAs/GaSb quantum wells with long edges and determined an effective edge resistance. Surprisingly, although the e...
1401.1531v2
2016-03-12
Spin Hall Effect and Origins of Nonlocal Resistance in Adatom-Decorated Graphene
Recent experiments reporting unexpectedly large spin Hall effect (SHE) in graphene decorated with adatoms have raised a fierce controversy. We apply numerically exact Kubo and Landauer- Buttiker formulas to realistic models of gold-decorated disordered graphene (including adatom clustering) to obtain the spin Hall con...
1603.03870v3
2016-03-17
Electrical Writing of Magnetic and Resistive Multistates in CoFe Films Deposited onto Pb[Zr$_x$Ti$_{1-x}$]O$_3$
Electric control of magnetic properties is an important challenge for modern magnetism and spintronic development. In particular, an ability to write magnetic state electrically would be highly beneficial. Among other methods, the use of electric field induced deformation of piezoelectric elements is a promising low-en...
1603.05476v1
2018-08-26
Supercondutivity in SnSb with natural superlattice structure
We report the results of electrical resistivity, magnetic and thermodynamic measurements on polycrystalline SnSb, whose structure consists of stacks of Sb bilayers and Sn4Sb3 septuple layers along the c-axis. The material is found to be a weakly coupled, fully gapped, type-II superconductor with a bulk Tc of 1.50 K, wh...
1808.08500v2
2019-03-03
Scaling parameters in anomalous and nonlinear Hall effects depend on temperature
In the study of the anomalous Hall effect, the scaling relations between the anomalous Hall and longitudinal resistivities play the central role. The scaling parameters by definition are fixed as the scaling variable (longitudinal resistivity) changes. Contrary to this paradigm, we unveil that the electron-phonon scatt...
1903.00810v5
2019-03-19
Composition dependence of magnetoresistance in Fe$_{1-x}$Ni$_{x}$ alloys
Resistance of Fe$_{1-x}$Ni$_x$(x=0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7 and 0.9) has been measured using four probe method from 5K to 300K with and without a longitudinal magnetic field of 8T. The zero field resistivity of x=0.1 and 0.9 alloys, predominant contribution to resistivity above near room temperature is due to el...
1903.08230v3
2019-03-26
Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory
A detailed understanding of quantization conductance (QC), their correlation with resistive switching phenomena and controlled manipulation of quantized states is crucial for realizing atomic-scale multilevel memory elements. Here, we demonstrate highly stable and reproducible quantized conductance states (QC-states) i...
1903.10688v1
2019-12-11
Current-induced fragmentation of antiferromagnetic domains
Electrical and optical pulsing allow for manipulating the order parameter and magnetoresistance of antiferromagnets, opening novel prospects for digital and analog data storage in spintronic devices. Recent experiments in CuMnAs have demonstrated giant resistive switching signals in single-layer antiferromagnetic films...
1912.05287v1
2019-12-12
Aharonov-Bohm oscillations of four-probe resistance in topological quantum rings in silicene and bilayer graphene
We consider observation of Aharonov-Bohm oscillations in clean systems based on the flow of topologically protected currents in silicene and bilayer graphene. The chiral channels in these materials are defined by the flips of the vertical electric field. The line of the flip confines chiral currents flowing along it in...
1912.05876v2
2021-01-13
Hinge Spin Polarization in Magnetic Topological Insulators Revealed by Resistance Switch
We report on the possibility to detect hinge spin polarization in magnetic topological insulators by resistance measurements. By implementing a three-dimensional model of magnetic topological insulators into a multi-terminal device with ferromagnetic contacts near the top surface, local spin features of the chiral edge...
2101.05293v2
2021-01-26
Demystifying strange metal and violation of Luttinger theorem in a doped Mott insulator
Metallic states coined strange metal (SM), with robust linear-$T$ resistivity, have been widely observed in many quantum materials under strong electron correlation, ranging from high-$T_{c}$ cuprate superconductor, organic superconductor to twisted multilayer graphene and MoTe$_{2}$/WSe$_{2}$ superlattice. Despite dec...
2101.10611v3
2012-06-15
A ferroelectric memristor
Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors have recently emerged based on well-established physical phenomena with albeit mo...
1206.3397v1
2015-04-30
Study of the Negative Magneto-Resistance of Single Proton-Implanted Lithium-Doped ZnO Microwires
The magneto-transport properties of single proton-implanted ZnO and of Li(7\%)-doped ZnO microwires have been studied. The as-grown microwires were highly insulating and not magnetic. After proton implantation the Li(7\%) doped ZnO microwires showed a non monotonous behavior of the negative magneto-resistance (MR) at t...
1504.08230v1
2015-07-29
Integration of a 2D Periodic Nanopattern Into Thin Film Polycrystalline Silicon Solar Cells by Nanoimprint Lithography
The integration of two-dimensional (2D) periodic nanopattern defined by nanoimprint lithography and dry etching into aluminum induced crystallization (AIC) based polycrystalline silicon (Poly-Si) thin film solar cells is investigated experimentally. Compared to the unpatterned cell an increase of 6% in the light absorp...
1507.08341v1
2019-06-03
Observations of zero electrical resistance of Au-Ag thin films near room temperature
Recent observations of superconducting like transition at 286 K in Ag and Ag nanostructures by Thapa et al. (arxiv: 1807.08572) have rekindled the hope for room temperature superconductivity under ambient conditions. We also investigated the electrical properties of Ag-Au nanostructure in the form of thin film grown on...
1906.00708v1
2019-06-24
Combination of informational storage and logical processing based on an all-oxide asymmetric multiferroic tunnel junction
Multiferroic tunnel junctions (MFTJs) have already been proved to be promising candidates for application in spintronics devices. The coupling between tunnel magnetoresistance (TMR) and tunnel electroresistance (TER) in MFTJs can provide four distinct resistive states in a single memory cell. Here we show that in an al...
1906.09993v1
2019-10-04
Nonvolatile Multilevel States in Multiferroic Tunnel Junctions
Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed Multiferroic Tunnel Junctions (MFTJs), can be achieved not only by the magnetic alignments of two ferromagnets but also by the electric polarization of the ferroelectric interlayer, ...
1910.02002v1
2020-06-02
Ultra-fast Kinematic Vortices in Mesoscopic Superconductors: The Effect of the Self-Field
Within the framework of the generalized time-dependent Ginzburg-Landau equations, we studied the influence of the magnetic self-field induced by the currents inside a superconducting sample driven by an applied transport current. The numerical simulations of the resistive state of the system show that neither material ...
2006.01335v1
2020-07-09
Coupling-independent, Real-time Wireless Resistive Sensing through Nonlinear PT-symmetry
We report the realization of coupling-independent, robust wireless sensing of fully-passive resistive sensors. PT-symmetric operation obviates sweeping, permitting real-time, single-point sensing. Self-oscillation is achieved through a fast-settling nonlinearity whose voltage amplitude is proportional to the sensor's r...
2007.05077v4
2020-07-29
An electro-thermal computational study of conducting channels in dielectric thin films using self-consistent phase-field methodology: A view toward the physical origins of resistive switching
A large number of experimental studies suggest two-terminal resistive switching devices made of a dielectric thin film sandwiched by a pair of electrodes exhibit reversible multi-state switching behaviors; however coherent understanding of physical and chemical origins of their electrical properties needs to be further...
2007.15123v1
2020-08-24
Peierls-type metal-insulator transition in carbon nanostructures
We report the observation of Peierls-type metal-insulator transition in carbon nanostructures formed by chemical vapor deposition inside the pore network of the ZSM-5 zeolite. The Raman spectrum of this nanocarbon@ZSM-5 indicates a clear signature of the radial breathing mode (RBM) for (3,0) carbon nanotubes that can c...
2008.10160v1
2020-10-22
Electrical and Thermal Transport Properties of the beta-Pyrochlore Oxide CsW2O6
We report the electrical resistivity, thermoelectric power, and thermal conductivity of single-crystalline and sintered samples of the 5d pyrochlore oxide CsW2O6. The electrical resistivity of the single crystal is 3 mohm cm at 295 K and gradually increases with decreasing temperature above 215 K (Phase I). The thermoe...
2010.11404v1
2020-11-11
Elastic turbulence generates anomalous flow resistance in porous media
Diverse processes rely on the viscous flow of polymer solutions through porous media. In many cases, the macroscopic flow resistance abruptly increases above a threshold flow rate in a porous medium---but not in bulk solution. The reason why has been a puzzle for over half a century. Here, by directly visualizing the f...
2011.06036v1
2021-02-08
Double magnetic phase transitions and magnetotransport anomalies in a new compound Gd$_\textbf{2}$AgSi$_\textbf{3}$
Dc and ac-magnetic susceptibility ($\chi$), specific heat ($C_\mathrm{P}$), electrical resistivity ($\rho$) and magnetoresistance measurements performed on the new polycrystalline compound $\mathrm{Gd_2AgSi_3}$, crystallizing in the $\alpha$-$\mathrm{ThSi_2}$ tetragonal structure, are reported. Two magnetic phase trans...
2102.04096v2
2021-04-23
Ab initio inspection of thermophysical experiments for zirconium near melting
We present quantum molecular dynamics calculations of thermophysical properties of solid and liquid zirconium in the vicinity of melting. An overview of available experimental data is also presented. We focus on the analysis of thermal expansion, molar enthalpy, resistivity and normal spectral emissivity of solid and l...
2104.11521v2
2021-06-16
Statistical Analysis of Contacts to Synthetic Monolayer MoS2
Two-dimensional (2D) semiconductors are promising candidates for scaled transistors because they are immune to mobility degradation at the monolayer limit. However, sub-10 nm scaling of 2D semiconductors, such as MoS2, is limited by the contact resistance. In this work, we show for the first time a statistical study of...
2106.08673v3
2021-06-19
Dopant Precursor Adsorption into Single-Dimer Windows: Towards Guided Self-Assembly of Dopant Arrays on Si(100)
Atomically precise dopant arrays in Si are being pursued for solid-state quantum computing applications. We propose a guided self-assembly process to produce atomically precise arrays of single dopant atoms in lieu of lithographic patterning. We leverage the self-assembled c(4x2) structure formed on Br- and I-Si(100) a...
2106.10556v1
2021-07-07
Large Magneto-Electric Resistance in the Topological Dirac Semimetal alpha Sn
The spin-momentum locking of surface states in topological quantum materials can produce a resistance that scales linearly with magnetic and electric fields. Such a bilinear magneto-electric resistance (BMER) effect offers a completely new approach for magnetic storage and magnetic field sensing applications. The effec...
2107.03472v1
2021-10-21
Magnetic critical behavior and anomalous Hall effect in 2H-Co$_{0.22}$TaS$_{2}$ single crystals
We report ferromagnetism in 2H-Co$_{0.22}$TaS$_2$ single crystals where Co atoms are intercalated in the van der Waals gap, and a systematic study of its magnetic critical behavior in the vicinity of $T_c \sim 28$ K. The obtained critical exponents $\beta$ = 0.43(2), $\gamma$ = 1.15(1), and $\delta = 3.54(1)$ fulfill t...
2110.11350v1
2022-01-21
Anomalous metals: from "failed superconductor" to "failed insulator"
Resistivity saturation is found on both superconducting and insulating sides of an "avoided" magnetic-field-tuned superconductor-to-insulator transition (H-SIT) in a two-dimensional In/InO$_x$ composite, where the anomalous metallic behaviors cut off conductivity or resistivity divergence in the zero-temperature limit....
2201.08801v1
2022-03-12
Quantifying active and resistive stresses in adherent cells
To understand cell migration, it is crucial to gain knowledge on how cells exert and integrate forces on/from their environment. A quantity of prime interest for biophysicists interested in cell movements modeling is the intracellular stresses. Up to now, three different methods have been proposed to calculate it, they...
2203.06475v2
2022-03-23
Quantum oscillations and weak anisotropic resistivity in the chiral Fermion semimetal PdGa
We perform a detailed analysis of the magnetotransport and de Haas-van Alphen (dHvA) oscillations in crystal PdGa which is predicted to be a typical chiral Fermion semimetal from CoSi family holding a large Chern number. The unsaturated quadratic magnetoresistance (MR) and nonlinear Hall resistivity indicate that PdGa ...
2203.12772v1
2022-05-04
Percolative Superconductivity in Electron-Doped Sr$_{1-x}$Eu$_{x}$CuO$_{2+y}$ Films
Electron-doped infinite-layer Sr$_{1-x}$Eu$_{x}$CuO$_{2+y}$ films over a wide doping range have been prepared epitaxially on SrTiO$_3$(001) using reactive molecular beam epitaxy. In-plane transport measurements of the single crystalline samples reveal a dome-shaped nodeless superconducting phase centered at $x$ $\sim$ ...
2205.01844v1
2022-05-10
Effect of substrate temperature on the optoelectronic properties of DC magnetron sputtered copper oxide films
Copper oxide thin films are deposited on quartz substrates by DC magnetron sputtering and the effect of deposition temperature on their optoelectronic properties is examined in detail. Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) analysis, Raman spectroscopy, UV-Vis spectroscopy, and four-probe sheet res...
2205.05615v1
2022-08-10
Spin-carrier coupling induced ferromagnetism and giant resistivity peak in EuCd$_2$P$_2$
EuCd$_2$P$_2$ is notable for its unconventional transport: upon cooling the metallic resistivity changes slope and begins to increase, ultimately 100-fold, before returning to its metallic value. Surprisingly, this giant peak occurs at 18K, well above the N\'{e}el temperature ($T_N$) of 11.5K. Using a suite of sensitiv...
2208.05499v1
2022-10-04
Time-domain impedance method for transient photovoltage analysis
In this work, we approximate the surface photovoltage (SPV) transients in nm-sized ZnO films by the equivalent RC circuit model. The SPV rises in time in time for about 90 mcs after the exciting light pulse at 275 nm is off at different pulse widths ranging from 1.2 to 12 mcs. The key to this observation is a considera...
2210.07928v1
2022-10-17
Multiscale modeling of resistive switching in gold nanogranular films
Metallic nanogranular films display a complex dynamical response to a constant bias, showing up as atypical resistive switching mechanism which could be used to create electrical components for neuromorphic applications. To model such a phenomenon we use a multiscale approach blending together an ab initio treatment of...
2210.09379v1
2022-10-27
Green's Functions For Random Resistor Networks
We analyze random resistor networks through a study of lattice Green's functions in arbitrary dimensions. We develop a systematic disorder perturbation expansion to describe the weak disorder regime of such a system. We use this formulation to compute ensemble averaged nodal voltages and bond currents in a hierarchical...
2210.15562v3
2022-12-19
Anisotropic resistance with a 90-degree twist in a ferromagnetic Weyl semimetal, Co2MnGa
Co$_2$MnGa is a ferromagnetic semimetal with Weyl nodal lines identified by ARPES. We studied electrical transport in thin Co$_2$MnGa lamellae (10 $\times$ 10 $\times$ 0.4-5 microns) cut from single-crystals using a focused ion beam. These crystals exhibit an unexpected and highly unusual planar resistance anisotropy (...
2212.09738v1
2022-12-29
Stateful Logic using Phase Change Memory
Stateful logic is a digital processing-in-memory technique that could address von Neumann memory bottleneck challenges while maintaining backward compatibility with standard von Neumann architectures. In stateful logic, memory cells are used to perform the logic operations without reading or moving any data outside the...
2212.14377v1
2023-03-15
Two-fold anisotropic superconducting state in topological superconductor Sn$_4$Au
Here we report the anisotropic magnetotransport properties in the superconducting state of Sn$_4$Au single crystal. Sn$_4$Au single crystal is synthesized through an easy melt growth method. Superconducting properties are evidenced by resistivity vs. temperature and DC magnetization measurements. Isothermal magnetizati...
2303.08520v1
2023-03-28
Effect of atomic anti-site disorder on the AMR in FeCo alloys
In order to understand the anti-site disorder effect on the anisotropic magnetoresistance (AMR) effect in alloys, $\rm{Fe}_{50}Co_{50}$ alloys were studied in this work using the fully relativistic spin-polarized screened (KKR) method. The anti-site effect was modeled by interchanging Fe and Co atoms and treated by the...
2303.15726v1
2023-03-28
Superconductivity in boron-doped carbon nanotube networks
By using the five Angstrom diameter pores of calcined zeolite as the template, we have fabricated boron doped carbon nanotube networks via the chemical vapor deposition method. Raman data indicate the network to comprise segments of interconnected carbon nano tubes. Transport measurements showed a superconducting trans...
2303.15980v1
2023-04-12
Measuring a Soft Resistive Strain Sensor Array by Solving the Resistor Network Inverse Problem
Soft robotics is applicable to a variety of domains due to the adaptability offered by the soft and compliant materials. To develop future intelligent soft robots, soft sensors that can capture deformation with nearly infinite degree-of-freedom are necessary. Soft sensor networks can address this problem, however, meas...
2304.05828v1
2023-05-22
Ion-selective scattering studied by the variable-energy electron irradiation of Ba$_{0.2}$K$_{0.8}$Fe$_2$As$_2$ superconductor
Low-temperature variable-energy electron irradiation was used to induce non-magnetic disorder in a single crystal of hole-doped iron-based superconductor, Ba$_{1-x}$K$_x$Fe$_2$As$_2$, $x=$0.80. To avoid systematic errors, the beam energy was adjusted non-consequently for five values between 1.0 and 2.5 MeV, whence samp...
2305.13217v1
2023-06-05
Multilayer GZ/YSZ Thermal Barrier Coating from Suspension and Solution Precursor Plasma Spray
Gas turbines rely on thermal barrier coating (TBC) to thermally insulate the nickel-based superalloys underneath during operation; however, current TBCs, yttria stabilised zirconia (YSZ), limit the operating temperature and hence efficiency. At an operating temperature above 1200{\deg}C, YSZ is susceptible to failure d...
2306.02720v1
2024-01-31
Effect of severe plastic deformation realized by rotary swaging on the mechanical properties and corrosion resistance of near-a-titanium alloy Ti-2.5Al-2.6Zr
The research aims to analyze the impact that severe plastic deformation arising during Rotary Swaging has on mechanical properties and corrosion resistance of a near-a-titanium alloy Ti-2.5Al-2.6Zr (Russian industrial name PT7M). The nature of corrosion decay in fine-grained alloys caused by hot salt corrosion is known...
2401.17672v1
2024-03-17
Observation of diamagnetic strange-metal phase in sulfur-copper codoped lead apatite
By codoping sulfur and copper into lead apatite, the crystal grains are directionally stacked and the room-temperature resistivity is reduced from insulating to $2\times10^{-5}~\Omega\cdot$m. The resistance-temperature curve exhibits a nearly linear relationship at low temperature suggesting the presence of strange-met...
2403.11126v3
2024-04-09
Transport resistance strikes back: unveiling its impact on fill factor losses in organic solar cells
The fill factor ($FF$) is a critical parameter for solar cell efficiency, yet its analytical description is challenging due to the interplay between recombination and charge extraction processes. An often overlooked yet significant factor contributing to $FF$ losses, beyond recombination, is the influence of charge tra...
2404.06190v1
2024-05-09
Negative longitudinal resistance of monolayer graphene in the quantum Hall regime
In the quantum Hall regime the charge current is carried by ideal one-dimensional edge channels where the backscattering is prohibited by topology. This results in the constant potential along the edge of the Hall bar leading to zero 4-terminal longitudinal resistance r_xx. Finite scattering between the counter-propaga...
2405.05515v2
2012-08-01
Spin-fluctuations in Ti$_{60}$V$_{40}$ alloy and its influence on the superconductivity
We report experimental studies of the temperature and magnetic field dependence of resistivity and dc magnetic susceptibility and the temperature dependence of zero field heat capacity in a Ti$_{0.6}$V$_{0.4}$ alloy. The temperature dependence of the normal state dc magnetic susceptibility in this Ti$_{0.6}$V$_{0.4}$ a...
1208.0181v3
2016-06-14
On the multiferroic skyrmion-host GaV4S8
The lacunar spinel GaV4S8 exhibits orbital ordering at 44 K and shows a complex magnetic phase diagram below 12.7 K, which includes ferromagnetic and cycloidal spin order. At low but finite external magnetic fields, N\'eel-type skyrmions are formed in this material. Skyrmions are whirl-like spin vortices that have rece...
1606.04511v1
2016-10-24
Self-aligned local electrolyte gating of 2D materials with nanoscale resolution
In the effort to make 2D materials-based devices smaller, faster, and more efficient, it is important to control charge carrier at lengths approaching the nanometer scale. Traditional gating techniques based on capacitive coupling through a gate dielectric cannot generate strong and uniform electric fields at this scal...
1610.07646v2
2020-09-22
Half-Metal Spin-Gapless Semiconductor Junctions as a Route to the Ideal Diode
The ideal diode is a theoretical concept that completely conducts the electric current under forward bias without any loss and that behaves like a perfect insulator under reverse bias. However, real diodes have a junction barrier that electrons have to overcome and thus they have a threshold voltage $V_T$, which must b...
2009.10463v1
2020-11-22
Quasi-two-dimensional heterostructures (K$M_{1-x}$Te)(LaTe$_{3}$) ($M$ = Mn, Zn) with charge density waves
Layered heterostructure materials with two different functional building blocks can teach us about emergent physical properties and phenomena arising from interactions between the layers. We report the intergrowth compounds KLa$M$$_{1-x}$Te$_{4}$ ($M$ = Mn, Zn; $x\approx$ 0.35) featuring two chemically distinct alterna...
2011.11068v2
2021-06-09
Fracture Mechanics-Based Quantitative Matching of Forensic Evidence Fragments
Fractured metal fragments with rough and irregular surfaces are often found at crime scenes. Current forensic practice visually inspects the complex jagged trajectory of fractured surfaces to recognize a ``match'' using comparative microscopy and physical pattern analysis. We developed a novel computational framework, ...
2106.04809v1
2021-06-16
Role of surface termination in the metal-insulator transition of V$_2$O$_3$(0001) ultrathin films
Surface termination is known to play an important role in determining the physical properties of materials. It is crucial to know how surface termination affects the metal-insulator transition (MIT) of V$_2$O$_3$ films for both fundamental understanding and its applications. By changing growth parameters, we achieved a...
2106.08555v1
2022-03-24
Influence of generated defects by Ar-implantation on the thermoelectric properties of ScN
Nowadays, making thermoelectric materials more efficient in energy conversion is still a challenge. In this work, to reduce the thermal conductivity and thus improve the overall thermoelectric performances, point and extended defects were generated in epitaxial 111-ScN thin films by implantation using argon ions. The f...
2203.13227v4
2022-03-29
Dose rate effects in radiation-induced changes to phenyl-based polymeric scintillators
Results on the effects of ionizing radiation on the signal produced by plastic scintillating rods manufactured by Eljen Technology company are presented for various matrix materials, dopant concentrations, fluors (EJ-200 and EJ-260), anti-oxidant concentrations, scintillator thickness, doses, and dose rates. The light ...
2203.15923v2
2022-04-11
Thermal insulation and heat guiding using nanopatterned MoS2
In the modern electronics overheating is one of the major reasons for device failure. Overheating causes irreversible damage to circuit components and can also lead to fire, explosions, and injuries. Accordingly, in the advent of 2D material-based electronics, an understanding of their thermal properties in addition to...
2204.04999v1