publicationDate
stringlengths
10
10
title
stringlengths
17
233
abstract
stringlengths
20
3.22k
id
stringlengths
9
12
2020-08-11
Anomalous Hall effect in half-metallic Heusler compound Co$_{2}$Ti$X$ ($X$=Si, Ge)
Though Weyl fermions have recently been observed in several materials with broken inversion symmetry, there are very few examples of such systems with broken time reversal symmetry. Various Co$_{2}$-based half-metallic ferromagnetic Heusler compounds are lately predicted to host Weyl type excitations in their band stru...
2008.04837v1
2021-03-24
Manipulating Berry curvature of SrRuO3 thin films via epitaxial strain
Berry curvature plays a crucial role in exotic electronic states of quantum materials, such as intrinsic anomalous Hall effect. As Berry curvature is highly sensitive to subtle changes of electronic band structures, it can be finely tuned via external stimulus. Here, we demonstrate in SrRuO3 thin films that both the ma...
2103.12973v1
2022-06-06
Anomalous Transport Properties of Re$_3$Ge$_7$
Single crystals of intermetallic Re$_3$Ge$_7$ were grown and characterized by measuring magnetization, electrical resistivity, Hall coefficient, and specific heat. Magnetization measurements show the material is weakly diamagnetic. A phase transition is indicated by a kink in magnetic susceptibility at $T_{c} = 58.5$K ...
2206.02943v1
2022-06-28
Colossal piezoresistance in narrow-gap Eu5In2Sb6
Piezoresistance, the change of a material's electrical resistance ($R$) in response to an applied mechanical stress ($\sigma$), is the driving principle of electromechanical devices such as strain gauges, accelerometers, and cantilever force sensors. Enhanced piezoresistance has been traditionally observed in two class...
2206.14073v1
2022-07-06
Sn2Pd: a possible superconducting material with topological surface states
In this article, we report the detailed magneto transport measurements of the topological semimetal (TSM) candidate, Sn2Pd. Single crystal of Sn2Pd is synthesized through the self-flux method. Phase purity and crystalline morphology are confirmed through powder X ray diffraction (PXRD) pattern and field emission scanni...
2207.02579v1
2023-03-17
On the determination of the thermal shock parameter of MAX phases: A combined experimental-computational study
Thermal shock resistance is one of the performance-defining properties for applications where extreme temperature gradients are required. The thermal shock resistance of a material can be described by means of the thermal shock parameter RT. Here, the thermo-mechanical properties required for the calculation of RT are ...
2303.10266v2
2023-05-18
Observation and enhancement of room temperature bilinear magnetoelectric resistance in sputtered topological semimetal Pt3Sn
Topological semimetal materials have become a research hotspot due to their intrinsic strong spin-orbit coupling which leads to large charge-to-spin conversion efficiency and novel transport behaviors. In this work, we have observed a bilinear magnetoelectric resistance (BMER) of up to 0.1 nm2A-1Oe-1 in a singlelayer o...
2305.10720v2
2023-09-12
In operando cryo-STEM of pulse-induced charge density wave switching in TaS$_2$
The charge density wave (CDW) material 1T-TaS$_2$ exhibits a pulse-induced insulator-to-metal transition, which shows promise for next-generation electronics such as memristive memory and neuromorphic hardware. However, the rational design of TaS$_2$ devices is hindered by a poor understanding of the switching mechanis...
2309.06406v1
2024-05-15
Laser Printing of Silver and Silver Oxide
We show that direct laser writing (DLW) in aqueous silver nitrate with a 1030 nm femtosecond (fs) laser results in deposition of a mixture of silver oxide and silver, in contrast to the pure silver deposition previously reported with 780 nm fs DLW. However, adding photoinitiator prevents silver oxide formation in a con...
2405.09340v1
2022-03-15
High Rate and High Precision Timing and Calorimeter Detectors
High precision timing, high rate calorimeters, and radiation resistance are becoming an important issue in particle physics especially in Energy and Intensity Frontiers. We discuss doped Zinc Oxide (ZnO:Ga or GZO; ZnO:X where X is Al, Cu or others) as a very fast scintillator and wavelength shifter (WLS), Total interna...
2203.09942v1
1998-01-20
QHE, magnetoresistance and disordered transport on 2D mesoscopic plaquettes
The transport properties of a rectangular mesoscopic plaquette in the presence of a perpendicular magnetic field are studied in a tight-binding model with randomly distributed traps. The longitudinal and Hall resistances are calculted in the four-probe Landauer-B\"{u}ttiker formalism which accounts automatically both f...
9801192v1
1998-07-16
Low temperature resistivity in a nearly half-metallic ferromagnet
We consider electron transport in a nearly half-metallic ferromagnet, in which the minority spin electrons close to the band edge at the Fermi energy are Anderson-localized due to disorder. For the case of spin-flip scattering of the conduction electrons due to the absorption and emission of magnons, the Boltzmann equa...
9807244v1
1998-11-26
Kinetics of electric field induced oxygen ion migration in epitaxial metallic oxide films
In this paper we report the observation of curent induced change of resistance of thin metallic oxide films. The resistance changes at a very low current (current density $J \geq 10^{3}$ A/cm$^{2}$). We find that the time dependence associated with the processes (increase of resistance) show a streched exponential type...
9811377v1
1999-09-14
Anomalous temperature behavior of resistivity in lightly doped manganites around a metal-insulator phase transition
An unusual temperature and concentration behavior of resistivity in $La_{0.7}Ca_{0.3}Mn_{1-x}Cu_xO_3$ has been observed at slight $Cu$ doping ($0\leq x \leq 0.05$). Namely, introduction of copper results in a splitting of the resistivity maximum around a metal-insulator transition temperature $T_0(x)$ into two differen...
9909196v1
1999-11-25
Anomaly of AC resistance in magnetic nanoparticle alloys at spin-glass-like transition
(withdrawn) A combined study of magnetic susceptibility and AC resistance was performed on melt-spun Cu-Co granular magnetic ribbons. The AC resistance as a function of temperature has a sharp maximum. We associate it with a diverging correlation length at the temperature of collective freezing of magnetic moments via ...
9911414v2
1999-12-14
Giant AC magnetoresistance and anisotropic AC magnetoresistance in granular magnetic alloys
(withdrawn)AC resistance of melt-spun granular magnetic Cu85Co15 ribbons was measured as a function of temperature in the range 5-300 K, magnetic field Hdc in the range -60 kOe to 60 kOe, and frequency in the range 1-1000 Hz. A sharp peak of zero-field resistance, which scales with frequency, and an associated isotropi...
9912259v2
2000-07-31
Electrical transport properties of bulk Ni$_{c}$Fe$_{1-c}$ alloys and related spin-valve systems
Within the Kubo-Greenwood formalism we use the fully relativistic, spin-polarized, screened Korringa-Kohn-Rostoker method together with the coherent-potential approximation for layered systems to calculate the resistivity for the permalloy series Ni$_{c}$Fe$_{1-c}$. We are able to reproduce the variation of the resisti...
0007507v1
2001-10-19
Transport, magnetic, thermodynamic and optical properties in Ti-doped Sr_2RuO_4
We report on electrical resistivity, magnetic susceptibility and magnetization, on heat capacity and optical experiments in single crystals of Sr_2Ru_(1-x)Ti_xO_4. Samples with x=0.1 and 0.2 reveal purely semiconducting resistivity behavior along c and the charge transport is close to localization within the ab-plane. ...
0110412v1
2002-01-10
Linear and nonlinear regime of a Random Resistor Network under biased percolation
We investigate the steady state of a two-dimensional random resistor network subjected to two competing biased percolations as a function of the bias strength. The properties of the linear and nonlinear regimes are studied by means of Monte Carlo simulations. In constant current conditions, a scaling relation is found ...
0201152v1
2002-04-11
In-plane Anisotropy on Resistivity and Thermopower in The Misfit Layered Oxide Bi2-xPbxSr2Co2Oy
We investigated the in-plane anisotropy on the resistivity and thermopower of Bi2-xPbxSr2Co2Oy single crystals, which have a misfit structure between the hexagonal CoO2 layer and the rock salt Bi2Sr2O4 layer. The resistivity and thermopower show significantly large anisotropy, which exceeds two at maximum. This anisotr...
0204245v1
2002-05-23
Nonlinear AC resistivity in s-wave and d-wave disordered granular superconductors
We model s-wave and d-wave disordered granular superconductors with a three-dimensional lattice of randomly distributed Josephson junctions with finite self-inductance. The nonlinear ac resistivity of these systems was calculated using Langevin dynamical equations. The current amplitude dependence of the nonlinear resi...
0205475v1
2002-12-06
Ab initio and finite-temperature molecular dynamics studies of lattice resistance in tantalum
This manuscript explores the apparent discrepancy between experimental data and theoretical calculations of the lattice resistance of bcc tantalum. We present the first results for the temperature dependence of the Peierls stress in this system and the first ab initio calculation of the zero-temperature Peierls stress ...
0212156v2
2003-02-21
Spin-Glass-like Transition and Hall Resistivity of Y2-xBixIr2O7
Various physical properties of the pyrochlore oxide Y2-xBixIr2O7 have been studied. The magnetizations M measured under the conditions of the zero-field-cooling(ZFC) and the field-cooling(FC) have different values below the temperature T=TG. The anomalous T-dependence of the electrical resistivities r and the thermoele...
0302437v1
2003-04-11
X-ray-induced electrical conduction in the insulating phase of thiospinel CuIr2S4
Effects of x-ray irradiation on the crystal structure and the electrical resistance were examined at low temperatures for the insulating phase of spinel compound CuIr2S4. We found that the resistance decreases by more than five decades by irradiation at 8.5 K. The structural change from triclinic to tetragonal was obse...
0304256v1
2003-04-18
Magnetoresistance and percolation in the LaNi(1-x)Co(x)O3 solid solution
A detailed study of the zero-field electrical resistivity and magnetoresistance for the metallic members of the LaNi_{1-x}Co{x}O3 solid solution with 0.3<=x<=0.6 is reported. The low temperature resistivity of the compounds with 0.3<=x<=0.5 exhibits a logarithmic dependence that is characteristic of systems with spin f...
0304423v2
2003-08-27
Room temperature domain wall pinning in bent ferromagnetic nanowires
Mechanically bent nickel nanowires show clear features in their room temperature magnetoresistance when a domain wall is pinned at the location of the bend. By varying the direction of an applied magnetic field, the wire can be prepared either in a single-domain state or a two-domain state. The presence or absence of t...
0308579v1
2003-11-27
Fabrication and Electrical Properties of Pure VO2 Phase Films
We have grown VO2 thin films by laser ablation for electronic device applications. In obtaining the thin films of the pure VO2 phase, oxygen partial pressure is a critical parameter because vanadium oxides have several phases with the oxygen concentration. It is found that the pure VO2 films are epitaxially grown on Al...
0311616v2
2004-01-20
Non-Gaussian Resistance Noise near Electrical Breakdown in Granular Materials
The distribution of resistance fluctuations of conducting thin films with granular structure near electrical breakdown is studied by numerical simulations. The film is modeled as a resistor network in a steady state determined by the competition between two biased processes, breaking and recovery. Systems of different ...
0401352v1
2004-07-23
Thermal and Electrical Properties of gamma-NaxCoO2 (0.70 < x < 0.78)
We have performed specific heat and electric resistivity measurements of Na$_{x}$CoO$_{2}$ ($x=0.70$-0.78). Two anomalies have been observed in the specific heat data for $x=0.78$, corresponding to magnetic transitions at $T_{c}=22$ K and $T_{k}\simeq 9$ K reported previously. In the electrical resistivity, a steep dec...
0407614v1
2004-09-24
Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr$_{0.7}$Ca$_{0.3}$MnO$_{3}$ interface
We have characterized the vertical transport properties of epitaxial layered structures composed of Pr$_{0.7}$Ca$_{0.3}$MnO$_{3}$ (PCMO) sandwiched between SrRuO$_{3}$ (SRO) bottom electrode and several kinds of top electrodes such as SRO, Pt, Au, Ag, and Ti. Among the layered structures, Ti/PCMO/SRO is distinct due to...
0409657v1
2004-12-27
Depinning at the initial stage of the resistive transition in superconductors with a fractal cluster structure
Depinning of vortices in percolative superconductor containing fractal clusters of a normal phase is considered. Transition of the superconductor into a resistive state corresponds to the percolation transition from a pinned vortex state to a resistive state when the vortices are free to move. The motion of the magneti...
0412702v1
2005-04-20
Resistive relaxation in field-induced insulator-metal transition of a (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ bilayer manganite single crystal
We have investigated the resistive relaxation of a (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ single crystal, in order to examine the slow dynamics of the field-induced insulator to metal transition of bilayered manganites. The temporal profiles observed in remanent resistance follow a stretched exponentia...
0504500v1
2005-05-19
Comparison of Measured and Calculated Specific Resistances of Pd/Pt Interfaces
We compare specific resistances (AR equals area A times resistance R) of sputtered Pd/Pt interfaces measured in two different ways with no-free-parameter calculations. One way gives 2AR(Pd/Pt) of 0.29 (0.03) fohm-m(2) and the other 0.17 (0.13) fohm-m(2). From these we derive a best estimate of 2AR(Pd/Pt) of 0.28 (0.06)...
0505488v2
2006-01-19
Spatially extended nature of resistive switching in perovskite oxide thin films
We report the direct observation of the electric pulse induced resistance-change (EPIR) effect at the nano scale on La1-xSrxMnO3 (LSMO) thin films by the current measurement AFM technique. After a switching voltage of one polarity is applied across the sample by the AFM tip, the conductivity in a local nanometer region...
0601451v1
2006-09-11
Imaging of Microscopic Sources of Resistive and Reactive Nonlinearities in Superconducting Microwave Devices
The technique of low-temperature Laser Scanning Microscopy (LSM) has been applied to the investigation of local microwave properties in operating YBa2Cu3O7/LaAlO3 thin-film resonators patterned into a meandering strip transmission line. By using a modified newly developed procedure of spatially-resolved complex impedan...
0609244v1
2006-09-24
Swift-heavy-ion-irradiation-induced enhancement in electrical conductivity of chemical solution deposited La0.7Ba0.3MnO3 thin films
Epitaxial thin films of La0.7Ba0.3MnO3 manganite, deposited using Chemical Solution Deposition technique, were irradiated by 200 MeV Ag+15 ions with a maximum ion dose up to 1x10^12 ions/cm2. Temperature- and magnetic field-dependent resistivity measurements on all the films (before and after irradiation) reveal a sust...
0609613v1
2006-10-06
Resistive hystersis effects in perovskite oxide-based heterostructure junctions
In this paper, we report the electrical and structural properties of the oxide-based metal/ferroelectric/metal (MFM) junctions. The heterostructures are composed of ultrathin layers of La0.7Ca0.3MnO3 (LCMO) as a metallic layer and, BaTiO3 (BTO) as a ferroelectric layer. Junction based devices, having the dimensions of ...
0610172v1
2007-02-26
Dielectrophoretically Assembled Polymer Nanowires for Gas Sensing
We measured the electronic properties and gas sensing response of nanowires containing segments of poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT/PSS) that were synthesized using anodic aluminum oxide (AAO) membranes. The nanowires have a "striped" structure of gold-PEDOT/PSS-gold and are typically 8 um...
0702619v1
2007-03-23
On the Kondo problem and thermodynamics of dilute magnetic alloys
An argument is given showing that Coulomb attraction between conduction electrons and impurity ions in a dilute magnetic alloy (DMA) can be disregarded, provided the system's inverse temperature beta is replaced by an effective inverse temperature t < beta. This replacement allows to remove the singularity in Kondo's e...
0703617v1
2007-05-14
Scaling analysis of the magnetoresistance in Ga_{1-x}Mn_xAs
We compare experimental resistivity data on Ga_{1-x}Mn_xAs films with theoretical calculations using a scaling theory for strongly disordered ferromagnets. All characteristic features of the temperature dependence of the resistivity can be quantitatively understood through this approach as originating from the close vi...
0705.2016v2
2007-06-07
Meta-nematic transitions in a bilayer system: Application to the bilayer ruthenate
It was suggested that the two consecutive metamagnetic transitions and the large residual resistivity discovered in Sr$_3$Ru$_2$O$_7$ can be understood via the nematic order and its domains in a single layer system. However, a recently reported anisotropy between two longitudinal resistivities induced by tilting the ma...
0706.1069v3
2007-06-12
Graphene Spin Transistor
Graphitic nanostructures, e.g. carbon nanotubes (CNT) and graphene, have been proposed as ideal materials for spin conduction[1-7]; they have long electronic mean free paths[8] and small spin-orbit coupling[9], hence are expected to have very long spin-scattering times. In addition, spin injection and detection in grap...
0706.1597v1
2007-08-20
Negative magnetoresistance of ultra-narrow superconducting nanowires in the resistive state
We present a phenomenological model qualitatively explaining negative magnetoresistance in quasi-one-dimensional superconducting channels in the resistive state. The model is based on the assumption that fluctuations of the order parameter (phase slips) are responsible for the finite effective resistance of a narrow su...
0708.2602v2
2007-11-23
Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
The linear dispersion relation in graphene[1,2] gives rise to a surprising prediction: the resistivity due to isotropic scatterers (e.g. white-noise disorder[3] or phonons[4-8]) is independent of carrier density n. Here we show that acoustic phonon scattering[4-6] is indeed independent of n, and places an intrinsic lim...
0711.3646v2
2008-02-11
Anomalous Hall effect in Fe/Cu bilayers
The scaling of anomalous Hall resistivity on the longitudinal resistivity has been intensively studied in the different magnetic systems, including multilayers and granular films, to examine which mechanism, skew scattering or side-jump, dominates. The basis of the scaling law is that both the resistivities are due to ...
0802.1462v1
2008-04-09
Theory of a continuous Mott transition in two dimensions
We study theoretically the zero temperature phase transition in two dimensions from a Fermi liquid to a paramagnetic Mott insulator with a spinon Fermi surface. We show that the approach to the bandwidth controlled Mott transition from the metallic side is accompanied by a vanishing quasiparticle residue and a divergin...
0804.1555v1
2008-04-28
Lattice Resistance to Dislocation Motion at the Nanoscale
In this letter we propose a model that demonstrates the effect of free surface on the lattice resistance experienced by a moving dislocation in nanodimensional systems. This effect manifests in an enhanced velocity of dislocation due to the proximity of the dislocation line to the surface. To verify this finding, molec...
0804.4360v2
2008-05-13
The Role of Electrical and Thermal Contact Resistance for Joule Breakdown of Single-Wall Carbon Nanotubes
Several data sets of electrical breakdown in air of single-wall carbon nanotubes (SWNTs) on insulating substrates are collected and analyzed. A universal scaling of the Joule breakdown power with nanotube length is found, which appears independent of the insulating substrates used or their thickness. This suggests the ...
0805.1937v1
2008-06-09
Transport properties and superconductivity in $Ba_{1-x}M_xFe_2As_2$ (M=La and K) with double FeAs layers
We synthesized the samples $Ba_{1-x}M_xFe_2As_2$ (M=La and K) with $ThCr_2Si_2$-type structure. These samples were systematically characterized by resistivity, thermoelectic power (TEP) and Hall coefficient ($R_H$). $BaFe_2As_2$ shows an anomaly in resistivity at about 140 K. Substitution of La for Ba leads to a shift ...
0806.1459v1
2009-02-21
Negative nonlocal resistance in mesoscopic gold Hall bars: Absence of giant spin Hall effect
We report the observation of negative nonlocal resistances in multiterminal mesoscopic gold Hall bar structures whose characteristic dimensions are larger than the electron mean-free path. Our results can only be partially explained by a classical diffusive model of the nonlocal transport, and are not consistent with a...
0902.3686v1
2009-08-26
Piezoresistance in chemically synthesized polypyrrole thin films
The resistance of chemically synthesized polypyrrole (PPy) thin films is investigated as a function of the pressure of various gases as well as of the film thickness. A physical, piezoresistive response is found to coexist with a chemical response if the gas is chemically active, like, e.g., oxygen. The piezoresistance...
0908.3840v1
2009-09-28
The effects of superconductor-stabilizer interfacial resistance on quench of current-carrying coated conductor
We present the results of numerical analysis of a model of normal zone propagation in coated conductors. The main emphasis is on the effects of increased contact resistance between the superconducting film and the stabilizer on the speed of normal zone propagation, the maximum temperature rise inside the normal zone, a...
0909.5209v1
2009-11-02
Giant anomalous Hall resistivity of the room temperature ferromagnet Fe3Sn2 - a frustrated metal with the kagome-bilayer structure
We have investigated magnetic and transport properties of the {\it kagom\'{e}-bilayer} ferromagnet Fe$_{3}$Sn$_{2}$. A soft ferromagnetism and a large anomalous Hall effect are observed. The saturated Hall resistivity of Fe$_{3}$Sn$_{2}$ is 3.2 $\mu\Omega$cm at 300 K, which is almost 20 times higher than that of typica...
0911.0289v1
2010-04-19
Towards a Quantitative Description of Solid Electrolyte Conductance Switches
We present a quantitative analysis of the steady state electronic transport in a resistive switching device. The device is composed of a thin film of Ag$_{2}$S (solid electrolyte) contacted by a Pt nano-contact acting as ion-blocking electrode, and a large area Ag reference electrode. When applying a bias voltage both ...
1004.3079v1
2010-05-18
A general figure of merit for thick and thin transparent conductive carbon nanotube coatings
We suggest a wavelength-dependent figure of merit for transparent conducting nanotube networks, composed of the sheet resistance and the optical density. We argue that this would be more useful than other suggestions prevailing in the literature, because it relies on more realistic assumptions regarding the optical par...
1005.3125v1
2010-05-30
On the Corrosion Resistance of Porous Electroplated Zinc Coatings in Different Corrosive Media
The corrosion resistance of an electroplated (EP) Zn coating whose surface was chemically etched to produce surface defects (pores) is investigated in this work. Impedance and DC polarisation measururements were employed to study the behaviour of such coating in various corrosive media (NaCl, NaOH and rain water). Four...
1005.5554v1
2010-06-12
Ex-situ Tunnel Junction Process Technique Characterized by Coulomb Blockade Thermometry
We investigate a wafer scale tunnel junction fabrication method, where a plasma etched via through a dielectric layer covering bottom Al electrode defines the tunnel junction area. The ex-situ tunnel barrier is formed by oxidation of the bottom electrode in the junction area. Room temperature resistance mapping over a ...
1006.2436v1
2010-08-24
Magnetism of mixed quaternary Heusler alloys: (Ni,T)$_{2}$MnSn (T=Cu,Pd) as a case study
The electronic properties, exchange interactions, finite-temperature magnetism, and transport properties of random quaternary Heusler Ni$_{2}$MnSn alloys doped with Cu- and Pd-atoms are studied theoretically by means of {\it ab initio} calculations over the entire range of dopant concentrations. While the magnetic mome...
1008.4060v1
2010-10-29
Nd induced Mn spin-reorientation transition in NdMnAsO
A combination of synchrotron X-ray, neutron powder diffraction, magnetization, heat capacity and electrical resistivity measurements reveals that NdMnAsO is an antiferromagnetic semiconductor with large Neel temperature (TN = 359(2) K). At room temperature the magnetic propagation vector k = 0 and the Mn moments are di...
1010.6145v1
2010-11-04
Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two dimensional limit
We report a transport study of ultrathin Bi2Se3 topological insulators with thickness from one quintuple layer to six quintuple layers grown by molecular beam epitaxy. At low temperatures, the film resistance increases logarithmically with decreasing temperature, revealing an insulating ground state. The sharp increase...
1011.1055v1
2011-02-03
Temperature dependent resistivity in bilayer graphene due to flexural phonons
We have studied electron scattering by out-of-plane (flexural) phonons in doped suspended bilayer graphene. We have found the bilayer membrane to follow the qualitative behavior of the monolayer cousin. In the bilayer, different electronic structure combine with different electron-phonon coupling to give the same param...
1102.0807v1
2011-05-19
Anisotropic in-plane resistivity in the nematic phase of the iron pnictides
We show that the interference between scattering by impurities and by critical spin fluctuations gives rise to anisotropic transport in the Ising-nematic state of the iron pnictides. The effect is closely related to the non-Fermi liquid behavior of the resistivity near an antiferromagnetic quantum critical point. Our t...
1105.3906v2
2011-08-17
Control of rectifying and resistive switching behavior in BiFeO3 thin films
BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition using Au as the top electrode. The resistive switching property of the Au/BiFeO3/Pt stack has been significantly improved by carefully tuning the oxygen pressure during the growth, and a large switching ratio of ~4500 has been ac...
1108.3454v1
2011-09-05
The direct relation between the coefficient of the low temperature resistivity T^2 term and the superconducting transition temperature Tc
In several superconductors above the superconducting transition temperature Tc, the electrical resistivity is of the form {\rho} =AT^2. We show that there exists an empirical relation between Tc and A when both vary with an external parameter, e.g. pressure. The more resistive the sample the higher the Tc. Landau theor...
1109.0853v1
2011-10-17
In Situ Imaging of the Conducting Filament in a Silicon Oxide Resistive Switch
The nature of the conducting filaments in many resistive switching systems has been elusive. Through in situ transmission electron microscopy, we image the real-time formation and evolution of the filament in a silicon oxide resistive switch. The electroforming process is revealed to involve the local enrichment of sil...
1110.3755v1
2011-12-02
Wigner-Mott scaling of transport near the two-dimensional metal-insulator transition
Electron-electron scattering usually dominates the transport in strongly correlated materials. It typically leads to pronounced resistivity maxima in the incoherent regime around the coherence temperature $T^{*}$, reflecting the tendency of carriers to undergo Mott localization following the demise of the Fermi liquid....
1112.0440v2
2012-02-15
Non-linear resistivity and heat dissipation in monolayer graphene
We have experimentally studied the nonlinear nature of electrical conduction in monolayer graphene devices on silica substrates. This nonlinearity manifests itself as a nonmonotonic dependence of the differential resistance on applied DC voltage bias across the sample. At temperatures below ~70K, the differential resis...
1202.3394v1
2012-04-19
Observation of Negative Contact Resistances in Graphene Field-Effect Transistors
The gate-voltage (VG) dependence of the contact resistance (RC) in graphene field-effect transistors is characterized by the transmission line model. The RC-VG characteristics of Ag, Cu, and Au contacts display a dip around the charge neutrality point, and become even negative with Ag contacts. The dip structure is wel...
1204.4315v2
2012-05-24
Intrinsic Electron-Phonon Resistivity in Bi2Se3 in the Topological Regime
We measure the temperature-dependent carrier density and resistivity of the topological surface state of thin exfoliated Bi2Se3 in the absence of bulk conduction. When the gate-tuned chemical potential is near or below the Dirac point the carrier density is strongly temperature dependent reflecting thermal activation f...
1205.5554v2
2012-07-21
Simulation of magnetoresistance in disordered ultracold atomic Bose gases
Anderson localization was first investigated in the context of electrons in solids. One of the successes was in explaining the puzzle of negative magneto-resistance - as early as the 1940s it had been observed that electron diffusion rates in some materials can increase with the application of a magnetic field. Anderso...
1207.5095v1
2012-07-26
Spin-orbit-coupling induced domain-wall resistance in diffusive ferromagnets
We investigate diffusive transport through a number of domain wall (DW) profiles of the important magnetic alloy Permalloy taking into account simultaneously noncollinearity, alloy disorder, and spin-orbit coupling fully quantum mechanically, from first principles. In addition to observing the known effects of magnetiz...
1207.6277v2
2012-08-01
Textured Superconductivity in the Presence of a Coexisting Order: Ce115s and Other Heavy-Fermion Compounds
Superconductivity in strongly correlated electron systems frequently emerges in proximity to another broken symmetry. In heavy-electron superconductors, the nearby ordered state most commonly is magnetism, and the so-called Ce115 heavy-electron compounds have been particularly instructive for revealing new relationship...
1208.0253v1
2012-09-20
Surface resistance measurements of HTS thin films using SLAO dielectric resonator
Surface resistance of HTS films is typically measured using Sapphire dielectric rod resonators enclosed in a copper cavity. In this paper we present surface resistance measurements of YBa2Cu3O7-{\delta} films using Strontium Lanthanum Aluminate (SLAO) at a resonant frequency of 18.2 GHz. We have performed the error ana...
1209.4519v1
2012-12-04
UV/Ozone treatment to reduce metal-graphene contact resistance
We report reduced contact resistance of single-layer graphene devices by using ultraviolet ozone (UVO) treatment to modify the metal/graphene contact interface. The devices were fabricated from mechanically transferred, chemical vapor deposition (CVD) grown, single layer graphene. UVO treatment of graphene in the conta...
1212.0838v1
2013-03-25
Kinetics of excitations on the Fermi arcs in underdoped cuprates at low temperature
The Fermi-liquid-like (FL) resistivity recently observed in clean HgBa2CuO4 below the pseudogap temperature was related to carriers at the nodal points on the Fermi surface [4]. We show that this necessitates important implications for the electronic spectrum of underdoped (UD) cuprates in whole. Photoemission experime...
1303.6252v2
2013-03-27
First-Principles Calculation of Thermal Transport in the Metal/Graphene System
Thermal properties in the metal/graphene (Gr) systems are analyzed by using an atomistic phonon transport model based on Landauer formalism and first-principles calculations. The specific structures under investigation include chemisorbed Ni(111)/Gr, physisorbed Cu(111)/Gr and Au(111)/Gr, as well as Pd(111)/Gr with int...
1303.6936v1
2013-05-22
Electron Transport Through Ag-Silicene-Ag Junctions
For several years the electronic structure properties of the novel two-dimensional system silicene have been studied extensively. Electron transport across metal-silicence junctions, however, remains relatively unexplored. To address this issue, we developed and implemented a theoretical framework that utilizes the tig...
1305.5285v1
2013-06-13
Investigation of the quaternary Fe2-xCoxMnSi alloys by structural, magnetic, resistivity and spin polarization measurements
Effects of the Co substitution have been observed on the structural, magnetic and magneto-transport properties of Fe2-xCoxMnSi alloy. Curie temperature (TC) and saturation magnetization (MS) of these alloys increased linearly with the Co substitution. Competitive magnetic interaction between ferromagnetic (FM) and anti...
1306.3086v3
2013-06-21
Carrier density modulation in graphene underneath Ni electrode
We investigate the transport properties of graphene underneath metal to reveal whether the carrier density in graphene underneath source/drain electrodes in graphene field-effect transistors is fixed. The resistance of the graphene/Ni double-layered structure has shown a graphene-like back-gate bias dependence. In othe...
1306.5086v1
2013-07-29
Molecular Doping of Multilayer MoS2 Field-effect Transistors: Reduction in Sheet and Contact Resistances
For the first time, polyethyleneimine (PEI) doping on multilayer MoS2 field-effect transistors are investigated. A 2.6 times reduction in sheet resistance, and 1.2 times reduction in contact resistance have been achieved. The enhanced electrical characteristics are also reflected in a 70% improvement in ON current, and...
1307.7643v2
2013-09-15
Large lattice distortions associated with the magnetic transition in La0.7Sr0.3MnO3
Colossal magnetoresistance (CMR) is associated with the phase transition from a metallic ferromagnetic to insulating paramagnetic phase, which can be controlled by an applied magnetic field. The insulating phase occurs due to trapping of the charge carriers by polaronic lattice distortions, which raise the resistivity....
1309.3747v1
2013-09-20
Surface-resistance measurements using superconducting stripline resonators
We present a method to measure the absolute surface resistance of conductive samples at a set of GHz frequencies with superconducting lead stripline resonators at temperatures 1- 6K. The stripline structure can easily be applied for bulk samples and allows direct calculation of the surface resistance without the requir...
1309.5331v2
2013-10-17
The Influence of Ca and Y on the Microstructure and Corrosion Resistance of Vacuum Die Casting AZ91 Alloy
The influence of Ca and Y on the microstructure and corrosion resistance of vacuum die casting AZ91 alloy is investigated using optical microscope, electron scanning microscope, weight-loss test and electrochemical corrosion test. The results indicate that the microstructure of AZ91 alloy can be refined, amount of Mg17...
1310.4671v1
2013-11-05
Effect of disorder on the resistivity anisotropy near the electronic nematic phase transition in pure and electron-doped BaFe$_2$As$_2$
We show that the strain-induced resistivity anisotropy in the tetragonal state of the representative underdoped Fe-arsenides BaFe$_2$As$_2$, Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$ and Ba(Fe$_{1-x}$Ni$_x$)$_2$As$_2$ is independent of disorder over a wide range of defect and impurity concentrations. This result demonstrates that...
1311.0933v2
2013-11-14
Mechanically Modulated Tunneling Resistance in Monolayer MoS2
We report on the modulation of tunneling resistance in MoS2 monolayers by nano-indentation using an atomic force microscope (AFM). The resistance between the conductive AFM tip and the bottom electrode separated by a monolayer MoS2 is reversibly reduced by up to 4 orders of magnitude, which is attributed to enhanced qu...
1311.3608v1
2014-03-21
MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts
For the first time, n-type few-layer MoS2 field-effect transistors with graphene/Ti as the hetero-contacts have been fabricated, showing more than 160 mA/mm drain current at 1 {\mu}m gate length with an on-off current ratio of 107. The enhanced electrical characteristic is confirmed in a nearly 2.1 times improvement in...
1403.5485v2
2014-07-09
Thermal transport properties of metal/MoS2 interfaces from first principles
Thermal transport properties at the metal/MoS2 interfaces are analyzed by using an atomistic phonon transport model based on the Landauer formalism and first-principles calculations. The considered structures include chemisorbed Sc(0001)/MoS2 and Ru(0001)/MoS2, physisorbed Au(111)/MoS2, as well as Pd(111)/MoS2 with int...
1407.2335v1
2014-10-30
Highly resistive epitaxial Mg-doped GdN thin films
We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 1000 {\Omega}.cm and carrier concentrations of 10E16 cm-3 are obtained for films with Mg concentrations up to 5 x 10E19 atoms/cm3. X-ray diffraction rocking curves i...
1410.8228v1
2014-11-12
Probing a spin-glass state in SrRuO3 thin films through higher-order statistics of resistance fluctuations
The complex perovskite oxide SrRuO3 shows intriguing transport properties at low temperatures due to the interplay of spin, charge, and orbital degrees of freedom. One of the open questions in this system is regarding the origin and nature of the low-temperature glassy state. In this paper we report on measurements of ...
1411.3101v1
2014-12-02
On the field dependent surface resistance of niobium on copper cavities
The surface resistance Rs of superconducting cavities prepared by sputter coating a thin niobium film on a copper substrate increases significantly stronger with the applied RF field compared to cavities of bulk material. A possible cause is that due to the thermal boundary resistance between the copper substrate and t...
1412.0892v1
2015-01-20
Generation and detection of pure valley current by electrically induced Berry curvature in bilayer graphene
Valley is a useful degree of freedom for non-dissipative electronics since valley current that can flow even in an insulating material does not accompany electronic current. We use dual-gated bilayer graphene in the Hall bar geometry to electrically control broken inversion symmetry or Berry curvature as well as the ca...
1501.04776v1
2015-02-24
Unidirectional spin Hall magnetoresistance in ferromagnet/normal metal bilayers
Magnetoresistive effects are usually invariant upon inversion of the magnetization direction. In noncentrosymmetric conductors, however, nonlinear resistive terms can give rise to a current dependence that is quadratic in the applied voltage and linear in the magnetization. Here we demonstrate that such conditions are ...
1502.06898v2
2015-08-17
Emergence of non-Fermi liquid behaviors in 5d perovskite SrIrO3 thin films: interplay between correlation, disorder, and spin-orbit coupling
We investigate the effects of compressive strain on the electrical resistivity of 5d iridium based perovskite SrIrO3 by depositing epitaxial films of thickness 35 nm on various substrates such as GdScO3 (110), DyScO3 (110), and SrTiO3 (001). Surprisingly, we find anomalous transport behaviors in the tempeature dependen...
1508.03944v1
2015-08-31
Scalable T^2 resistivity in a small single-component Fermi surface
Scattering among electrons generates a distinct contribution to electrical resistivity that follows a quadratic temperature dependence. In strongly-correlated electron systems, the prefactor A of this T$^2$ resistivity scales with the magnitude of the electronic specific heat. Here, we show that one can change the magn...
1508.07812v1
2015-08-31
In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory
Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-rate (BER) is proposed as a holistic parameter for the write cycle resi...
1509.00070v1
2015-11-30
Solidification and loss of hydrostaticity in liquid media used for pressure measurements
We carried out a study of the pressure dependence of the solidification temperature in nine pressure transmitting media that are liquid at ambient temperature, under pressures up to 2.3 GPa. These fluids are: 1:1 isopentane/n-pentane, 4:6 light mineral oil/n-pentane, 1:1 isoamyl alcohol/n-pentane, 4:1 methanol/ethanol,...
1512.00087v1
2015-12-18
The effect of quenching from different temperatures on Bi 0.88 Sb 0.12 alloy
Structural, thermal, resistive and magnetic properties of melt quenched Bi 0.88 Sb 0.12 alloys are reported. The samples are heated at three different temperatures, followed by rapid quenching in liquid nitrogen. Large temperature difference between liquidus and solidus lines, led to microscopic in-homogeneity in the a...
1512.05883v1
2015-12-18
Exchange Bias and Bistable Magneto-Resistance States in Amorphous TbFeCo thin Films
Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy (PMA). Atom probe tomography (APT), scanning transmission electron microscopy (STEM), and energy dispersive spectroscopy (EDS) mapping have revealed two nano...
1512.06103v1
2015-12-23
Topological Critical Point and Resistivity Anomaly in HfTe5
There is a long-standing confusion concerning the physical origin of the anomalous resistivity peak in transition metal pentatelluride HfTe5. Several mechanisms, like the formation of charge density wave or polaron, have been proposed, but so far no conclusive evidence has been presented. In this work, we investigate t...
1512.07360v1
2016-01-03
Detection of DC currents and resistance measurements in longitudinal spin Seebeck effect experiments on Pt/YIG and Pt/NFO
In this work we investigated thin films of the ferrimagnetic insulators YIG and NFO capped with thin Pt layers in terms of the longitudinal spin Seebeck effect (LSSE). The electric response detected in the Pt layer under an out-of-plane temperature gradient can be interpreted as a pure spin current converted into a cha...
1601.00304v1