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2019-11-18
Comparison of screening for methicillin-resistant Staphylococcus aureus (MRSA) at hospital admission and discharge
Methicillin-resistant Staphylococcus aureus (MRSA) is a significant contributor to the growing concern of antibiotic resistant bacteria, especially given its stubborn persistence in hospitals and other health care facility settings. In combination with this characteristic of S. aureus (colloquially referred to as staph), MRSA presents an additional barrier to treatment and is now believed to have colonized two of every 100 people worldwide. According to the CDC, MRSA prevalence sits as high as 25-50% in countries such as the United Kingdom and the United States. Given the resistant nature of staph as well as its capability of evolving to compensate antibiotic treatment, controlling MRSA levels is more a matter of precautionary and defensive measures. This study examines the method of "search and isolation," which seeks to isolate MRSA positive patients in a hospital so as to decrease infection potential. Although this strategy is straightforward, the question of just whom to screen is of practical importance. We compare screening at admission to screening at discharge. To do this, we develop a mathematical model and use simulations to determine MRSA endemic levels in a hospital with either control measure implemented. We found that screening at discharge was the more effective method in controlling MRSA endemicity, but at the cost of a greater number of isolated patients.
1911.07711v1
2020-07-02
Bloch-Grüneisen temperature and universal scaling of normalized resistivity in doped graphene revisited
In this work, we resolved some controversial issues on the Bloch-Gr\"{u}neisen (BG) temperature in doped graphene via analytical and numerical calculations based on full inelastic electron-acoustic-phonon (EAP) scattering rate and various approximation schemes. Analytic results for BG temperature obtained by semi-inelastic (SI) approximation (which gives scattering rates in excellent agreement with the full inelastic scattering rates) are compared with those obtained by quasi-elastic (QE) approximation and the commonly adopted value of $\Theta^{LA}_{F} = 2\hbar v_{LA} k_F/k_B$. It is found that the commonly adopted BG temperature in graphene ($\Theta^{LA}_{F}$) is about 5 times larger than the value obtained by the QE approximation and about 2.5 times larger than that by the SI approximation, when using the crossing-point temperature where low-temperature and high-temperature limits of the resistivity meet. The corrected analytic relation based on SI approximation agrees extremely well with the transition temperatures determined by fitting the the low- and high-$T$ behavior of available experimental data of graphene's resistivity. We also introduce a way to determine the BG temperature including the full inelastic EAP scattering rate and the deviation of electron energy from the chemical potential ($\mu$) numerically by finding the maximum of $\partial \rho(\mu,T)/\partial T$. Using the analytic expression of $\Theta_{BG,1}$ we can prove that the normalized resistivity defined as $R_{1}=\rho(\mu,T)/\rho(\mu,\Theta_{BG,1})$ plotted as a function of $(T/\Theta_{BG,1})$ is independent of the carrier density. Applying our results to previous experimental data extracted shows a universal scaling behavior, which is different from previous studies.
2007.00839v1
2020-11-16
Transition region from turbulent to dead zone in protoplanetary disks: local shearing box simulations
The dynamical evolution of protoplanetary disks is of key interest for building a comprehensive theory of planet formation and to explain the observational properties of these objects. Using the magnetohydrodynamics code Athena++, with an isothermal shearing box setup, we study the boundary between the active and dead zone, where the accretion rate changes and mass can accumulate. We quantify how the turbulence level is affected by the presence of a non uniform ohmic resistivity in the radial-x direction that leads to a region of inhibited turbulence (or dead zone). Comparing the turbulent activity to that of ideal simulations, the turbulence inhibited area shows density fluctuations and magnetic activity at its boundaries, driven by energy injection from the active (ideal) zone boundaries. We find magnetic dissipation to be significantly stronger in the ideal regions, and the turbulence penetration through the boundary of the dead zone is determined by the value of the resistivity itself, through the ohmic dissipation process, though the thickness of the transition does not play a significant role in changing the dissipation. We investigate the 1D spectra along the shearing direction: magnetic spectra appear flat at large scales both in ideal as well as resistive simulations, though a Kolmogorov scaling over more than one decade persists in the dead zone, suggesting the turbulent cascade is determined by the hydrodynamics of the system: MRI dynamo action is inhibited where sufficiently high resistivity is present.
2011.08219v1
2021-10-21
E-DPNCT: An Enhanced Attack Resilient Differential Privacy Model For Smart Grids Using Split Noise Cancellation
High frequency reporting of energy consumption data in smart grids can be used to infer sensitive information regarding the consumer's life style and poses serious security and privacy threats. Differential privacy (DP) based privacy models for smart grids ensure privacy when analysing energy consumption data for billing and load monitoring. However, DP models for smart grids are vulnerable to collusion attack where an adversary colludes with malicious smart meters and un-trusted aggregator in order to get private information from other smart meters. We first show the vulnerability of DP based privacy model for smart grids against collusion attacks to establish the need of a collusion resistant model privacy model. Then, we propose an Enhanced Differential Private Noise Cancellation Model for Load Monitoring and Billing for Smart Meters (E-DPNCT) which not only provides resistance against collusion attacks but also protects the privacy of the smart grid data while providing accurate billing and load monitoring. We use differential privacy with a split noise cancellation protocol with multiple master smart meters (MSMs) to achieve colluison resistance. We did extensive comparison of our E-DPNCT model with state of the art attack resistant privacy preserving models such as EPIC for collusion attack. We simulate our E-DPNCT model with real time data which shows significant improvement in privacy attack scenarios. Further, we analyze the impact of selecting different sensitivity parameters for calibrating DP noise over the privacy of customer electricity profile and accuracy of electricity data aggregation such as load monitoring and billing.
2110.11091v4
2022-05-10
Disorder-enhanced effective masses and deviations from Matthiessen's rule in PdCoO$_2$ thin films
The observation of hydrodynamic transport in the metallic delafossite PdCoO$_2$ has increased interest in this family of highly conductive oxides, but experimental studies so far have mostly been confined to bulk crystals. In this work, the development of high-quality thin films of PdCoO$_2$ has enabled a thorough study of the conductivity as a function of film thickness using both dc transport and time-domain THz spectroscopy. With increasing film thickness from 12 nm to 102 nm, the residual resistivity decreases and we observe a large deviation from Matthiessen's rule (DMR) in the temperature dependence of the resistivity. We find that the complex THz conductivity is well fit by a single Drude term. We fit the data to extract the spectral weight and scattering rate simultaneously. The temperature dependence of the Drude scattering rate is found to be nearly independent of the residual resistivity and cannot be the primary mechanism for the observed DMR. Rather, we observe large changes in the spectral weight as a function of disorder, changing by a factor of 1.5 from the most disordered to least disordered films. We believe this corresponds to a mass enhancement of $\geq 2$ times the value of the bulk effective mass which increases with residual disorder. This suggests that the mechanism behind the DMR observed in dc resistivity is primarily driven by changes in the electron mass. We discuss the possible origins of this behavior including the possibility of disorder-enhanced electron-phonon scattering, which can be systematically tuned by film thickness.
2205.05006v2
2022-08-05
Hall effect in Poiseuille flow of two-dimensional electron fluid
The hydrodynamic regime of charge transport has been recently realized in high-quality conductors. In the hydrodynamic as well as in the Ohmic regimes the main part of the Hall resistance of a long sample is determined by the balance between the Lorentz force and the electric force, acting on conduction electrons. Experimentally observed deviations of the Hall resistance in hydrodynamic samples from such the ''standard'' value are usually associated with the Hall viscosity term in the Navier-Stokes equation. In this work we theoretically study the Hall effect in a Poiseuille flow of a two-dimensional electron fluid. We show that the near-edge semiballistic layers with the width of the order of the inter-particle mean free path, which inevitably appear near sample edges, give the contribution to the Hall resistance which is comparable with the bulk contribution from the Hall viscosity. In this way, the measured deviations of the Hall resistance from the ''standard'' one in hydrodynamic samples by the usual contact techniques should be associated with both the Hall viscosity in the bulk and the semiballistic effects in the near-edge layers
2208.03032v1
2022-10-28
Lattice effects on the physical properties of half doped perovskite ruthenates
We investigate the unusual phase transitions in SrRuO$_{3}$ and Sr$_{0.5}$Ca$_{0.5}$Ru$_{1-x}$Cr$_{x}$O$_{3}$ (x=0,0.05 and 0.1) employing x-ray diffraction, resistivity, magnetic studies and x-ray photoemission spectroscopy. Our results show the compounds undergo crossover from $itinerant$ ferromagnetism to $localised$ ferromagnetism. The combined studies suggests Ru and Cr to be in 4+ valence state. A Griffith phase and an enhancement in Curie temperature (Tc) from 38 K to 107 K is observed with Cr doping. A shift in the chemical potential towards the valence band is observed with Cr doping. In the metallic samples, interestingly, a direct link between the resistivity and orthorhombic strain is observed. Detailed studies in this direction will be helpful to understand the nature of interactions and hence manoeuvre its properties. In the non metallic samples, the resistivity is mainly governed by disorder and electron-electron correlation effects. The value of the resistivity for the 5% Cr doped sample suggests semi metallic behaviour. Understanding its nature in detail using electron spectroscopic techniques could unravel the possibility of its utility in high mobility transistors at room temperature and its combined property with ferromagnetism will be helpful in making spintronic devices.
2210.16036v1
2022-12-05
DeAR: A Deep-learning-based Audio Re-recording Resilient Watermarking
Audio watermarking is widely used for leaking source tracing. The robustness of the watermark determines the traceability of the algorithm. With the development of digital technology, audio re-recording (AR) has become an efficient and covert means to steal secrets. AR process could drastically destroy the watermark signal while preserving the original information. This puts forward a new requirement for audio watermarking at this stage, that is, to be robust to AR distortions. Unfortunately, none of the existing algorithms can effectively resist AR attacks due to the complexity of the AR process. To address this limitation, this paper proposes DeAR, a deep-learning-based audio re-recording resistant watermarking. Inspired by DNN-based image watermarking, we pioneer a deep learning framework for audio carriers, based on which the watermark signal can be effectively embedded and extracted. Meanwhile, in order to resist the AR attack, we delicately analyze the distortions that occurred in the AR process and design the corresponding distortion layer to cooperate with the proposed watermarking framework. Extensive experiments show that the proposed algorithm can resist not only common electronic channel distortions but also AR distortions. Under the premise of high-quality embedding (SNR=25.86dB), in the case of a common re-recording distance (20cm), the algorithm can effectively achieve an average bit recovery accuracy of 98.55%.
2212.02339v4
2023-04-18
Characterization of a Superconducting Microstrip Single-Photon Detector Shunted with an External Resistor
A superconducting microstrip single-photon detector (SMSPD) generally requires a shunt resistor to avoid latching, caused by its high current-carrying capacity and low kinetic inductance. Here, the effect of the shunt resistor on the behaviors of microbridge SMSPDs was investigated. We analyzed the change in equivalent switching current at different shunt resistances in two ways and determined the operating current range using intrinsic dark count rate (iDCR) curves. We observed that the reduction in shunt resistance can increase the operating current range, which helps to improve the internal detection efficiency (IDE) and reduce the iDCR. However, the reduction in the shunt resistance can reduce the pulse amplitude and increase the pulse decay time, which can degrade the timing jitter and count rate performance of the SMSPD. The trends of the experimental results can be qualitatively reproduced using a circuit model for an SMSPD with a shunt resistor, which provides useful information for the selection of shunt resistors. Furthermore, we report the improved detection performance of a helium-ion-irradiated SMSPD shunted with a small resistance of 5.2 {\Omega}. We observed a weak IDE saturation with a bias current at a wavelength up to 2000 nm and a nonlinear relation between detection current and photon energy.
2304.08762v1
2023-05-18
Fabrication of Al/AlOx/Al junctions with high uniformity and stability on sapphire substrates
Tantalum and aluminum on sapphire are widely used platforms for qubits of long coherent time. As quantum chips scale up, the number of Josephson junctions on Sapphire increases. Thus, both the uniformity and stability of the junctions are crucial to quantum devices, such as scalable superconducting quantum computer circuit, and quantum-limited amplifiers. By optimizing the fabrication process, especially, the conductive layer during the electron beam lithography process, Al/AlOx/Al junctions of sizes ranging from 0.0169 to 0.04 {\mu}m2 on sapphire substrates were prepared. The relative standard deviation of room temperature resistances (RN) of these junctions is better than 1.7% on 15 mmx15 mm chips, and better than 2.66% on 2 inch wafers, which is the highest uniformity on sapphire substrates has been reported. The junctions are robust and stable in resistances as temperature changes. The resistances increase by the ratio of 9.73% relative to RN as the temperature ramp down to 4K, and restore their initial values in the reverse process as the temperature ramps back to RT. After being stored in a nitrogen cabinet for 100 days, the resistance of the junctions changed by1.16% in average. The demonstration of uniform and stable Josephson junctions in large area paves the way for the fabrication of superconducting chip of hundreds of qubits on sapphire substrates.
2305.10956v2
2023-06-21
Coherent states and their superpositions (cat states) in microwave-induced resistance oscillations
We report a novel theoretical approach on the microwave-induced resistance oscillations based on the coherent states of the quantum harmonic oscillator. We first obtain an expression for the coherent states of driven-quantum harmonic oscillators that are used, in the model of microwaveinduced electron orbits, to calculate magnetoresistance under radiation. Thus, we find that the principle of minimum uncertainty of coherent states, involving time and energy, is at the heart of photo-oscillations and zero resistance states. Accordingly, we are able to explain important experimental evidence of this remarkable effect. Such as the physical origin of oscillations, their periodicity with the inverse of the magnetic field, their peculiar minima and maxima positions and the existence of zero resistance states. We apply our theory to the case of ultra-high mobility samples where we appeal to the principle of quantum superposition of coherent states and obtain that Schrodinger cat states (even and odd coherent states) are key to explain magnetoresistance at these extreme mobilities. With them we explain the, experimentally obtained, magnetoresistance resonance peak shift to a magnetic field where the cyclotron frequency equals half the radiation frequency. This effect is similar to the one described in quantum optics as a second harmonic generation process. We also explain the magnetoresistance collapse, that take place in the dark and with light. This effect is known as giant negative magnetoresistance. We generalize our results to study the case of a three-component or triangular Schrodinger cat state.
2306.12160v1
2023-08-28
Research on the Influence of Underwater Environment on the Dynamic Performance of the Mechanical Leg of a Deep-sea Crawling and Swimming Robot
The performance of underwater crawling and adjustment of the body posture for underwater manipulating of the deep-sea crawling and swimming robot (DCSR) is directly influenced by the dynamic performance of the underwater mechanical legs (UWML), as it serves as the executive mechanism of the DCSR. Compared with the mechanical legs of legged robots working on land, the UWML of the DCSR not only possesses the characteristics of the land used mechanical legs, but is also affected by the influence of the deep-sea underwater working environment (i.e., the hydrodynamic force, viscous resistance and dynamic seal resistance). To reduce these influence, firstly, the hydrodynamic force of the UWML were researched based on theory and experiment, and the hydrodynamic model was established with the fitted hydrodynamic parameters. Secondly, the oil viscous resistance and the dynamic seal resistance were studied experimentally, and the change laws of both with respect to the joint speed and the ambient pressure (depth of operation) were obtained. The results provide a basis for the subsequent research on the structure optimization and high performance control of the UWML and DCSR.
2308.14393v1
2023-11-17
Current manipulation of Giant tunneling altermagnetic resistance in collinear Antiferromagnetic RuO2/MgO/RuO2 sandwich structure
As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consumption and radiation tolerance. Conventional MRAM utilizes magnetic tunnel junctions (MTJs), which consist of two ferromagnetic layers separated by an insulating tunnel barrier. The orientation of the magnetic layers represents the binary data (0 or 1), and electrical resistance changes depending on the relative orientation of these magnetic layers. Despite these advancements, the quest for a swifter, more stable magneto-resistive random-access memory paradigm persists. In this vein, we present a groundbreaking development: room-temperature antiferromagnetic tunnel junctions devoid of any net magnetic moment. Over 200% tunneling altermagnetic resistance (TAR) ratio was measured at RuO2 (110)/MgO/RuO2 (110)/W structure, which is achieved by changing the antiferromagnetic Neel vector of RuO2 with an ultralow current density 2 MA*cm-2.
2311.10288v2
2024-02-09
Wellposedness of the electron MHD without resistivity for large perturbations of the uniform magnetic field
We prove the local wellposedness of the Cauchy problems for the electron magnetohydrodynamics equations (E-MHD) without resistivity for possibly large perturbations of nonzero uniform magnetic fields. While the local wellposedness problem for (E-MHD) has been extensively studied in the presence of resistivity (which provides dissipative effects), this seems to be the first such result without resistivity. (E-MHD) is a fluid description of plasma in small scales where the motion of electrons relative to ions is significant. Mathematically, it is a quasilinear dispersive equation with nondegenerate but nonelliptic second-order principal term. Our result significantly improves upon the straightforward adaptation of the classical work of Kenig--Ponce--Rolvung--Vega on the quasilinear ultrahyperbolic Schr\"odinger equations, as the regularity and decay assumptions on the initial data are greatly weakened to the level analogous to the recent work of Marzuola--Metcalfe--Tataru in the case of elliptic principal term. A key ingredient of our proof is a simple observation about the relationship between the size of a symbol and the operator norm of its quantization as a pseudodifferential operator when restricted to high frequencies. This allows us to localize the (non-classical) pseudodifferential renormalization operator considered by Kenig--Ponce--Rolvung--Vega, and produce instead a classical pseudodifferential renormalization operator. We furthermore incorporate the function space framework of Marzuola--Metcalfe--Tataru to the present case of nonelliptic principal term.
2402.06278v1
2024-03-21
Aging suppression in Multistrip Multigap Resistive Plate Chambers for high counting rate experiments
A long term operation of Multi-Strip Multi-Gap Resistive Plate Chambers (MSMGRPC) with gas mixtures based on C2H2F4 and SF6 leads to aging effects, observed as depositions on the surface of the resistive electrodes. Moreover, enhanced depositions and higher noise rates were evidenced around the nylon spacers used for defining the gas gaps between the resistive electrodes. The aging effects are reflected in an increase of the dark current and dark counting rate, with negative impact on the long term performance of the chamber and data volume in a free running readout mode operation. MSMGRPC prototypes designed with a direct gas flow through the gas gaps and minimization of the number of spacers in the active area were developed as mitigation solution. Prototypes with this new design and different granularities were assembled using fishing line as spacers and investigated for aging effects. Although a significant reduction in the dark current and dark counting rate was evidenced, dark counting rate localized around the fishing line spacers remains. In this paper, a new generation of direct flow chambers based on discrete spacers is presented. The results of their aging investigations show that, even at lower gas flows, the aging effects become negligible.
2403.14190v1
2006-03-20
Unusual metamagnetism in CeIrIn$_5$
We report a high field investigation (up to 45 T) of the metamagnetic transition in CeIrIn$_5$ with resistivity and de-Haas-van-Alphen (dHvA) effect measurements in the temperature range 0.03-1 K. As the magnetic field is increased the resistivity increases, reaches a maximum at the metamagnetic critical field, and falls precipitously for fields just above the transition, while the amplitude of all measurable dHvA frequencies are significantly attenuated near the metamagnetic critical field. However, the dHvA frequencies and cyclotron masses are not substantially altered by the transition. In the low field state, the resistivity is observed to increase toward low temperatures in a singular fashion, a behavior that is rapidly suppressed above the transition. Instead, in the high field state, the resistivity monotonically increases with temperature with a dependence that is more singular than the iconic Fermi-liquid, temperature-squared, behavior. Both the damping of the dHvA amplitudes and the increased resistivity near the metamagnetic critical field indicate an increased scattering rate for charge carriers consistent with critical fluctuation scattering in proximity to a phase transition. The dHvA amplitudes do not uniformly recover above the critical field, with some hole-like orbits being entirely suppressed at high fields. These changes, taken as a whole, suggest that the metamagnetic transition in CeIrIn$_5$ is associated with the polarization and localization of the heaviest of quasiparticles on the hole-like Fermi surface.
0603490v2
2022-11-10
T-linear resistivity, optical conductivity and Planckian transport for a holographic local quantum critical metal in a periodic potential
High $T_c$ cuprate strange metals are noted for a DC-resistivity that scales linearly with $T$ from the onset of superconductivity to the crystal melting temperature, indicative of a Planckian dissipation life time $\tau_{\hbar}\simeq \hbar /(k_B T)$. At the same time, the optical conductivity ceases to be of Drude form at high temperatures, suggesting a change of the underlying dynamics that surprisingly leaves the $T$-linear DC-resistivity unaffected. We use the AdS/CFT correspondence that describes strongly coupled, densely entangled metals to study DC thermo-electrical transport and the optical conductivities of the local quantum critical Gubser-Rocha holographic strange metal in the presence of a lattice potential, a prime candidate to compare with experiment. We find that the DC-resistivity is linear in $T$ at low temperatures for a range of lattice strengths and wavevectors, even as it transitions between different dissipative regimes. At weak lattice potential the optical conductivity evolves with increasing temperature from a Drude form to a bad-metal characterized by a mid-IR resonance without changing the DC transport, similar to that seen in cuprate strange metals. This mid-IR peak and its temperature evolution can be understood as a consequence of Umklapp hydrodynamics: hydrodynamic perturbations are Bloch modes in the presence of a lattice. At strong lattice potential an incoherent metal is realized instead where momentum conservation no longer plays a role in transport. In this regime the thermal diffusivity can be explained by Planckian dissipation originating in universal microscopic chaos, similar to holographic metals with strong homogeneous momentum relaxation. The charge diffusivity does not submit to this chaos explanation, even though the continuing linear-in-$T$ DC resistivity saturates to an apparent universal slope, numerically equal to a Planckian rate.
2211.05492v2
1998-05-20
A phenomenological model for magnetoresistance in granular polycrystalline colossal magnetoresistive materials: the role of spin polarised tunnelling at the grain boundaries
It has been observed that in bulk and polycrystalline thin films of collossal magnetoresistive (CMR) materials the magnetoresistance follows a different behaviour compared to single crystals or single crystalline films below the ferromagnetic transition temperature Tc. In this paper we develop a phenomenological model to explain the magnetic field dependence of resistance in granular CMR materials taking into account the spin polarised tunnelling at the grain boundaries. The model has been fitted to two systems, namely, La0.55Ho0.15Sr0.3MnO3 and La1.8Y0.5Ca0.7Mn2O7. From the fitted result we have separated out, in La0.55Ho0.15Sr0.3MnO3, the intrinsic contribution from the intergranular contribution to the magnetoresistance coming from spin polarised tunnelling at the grain boundaries. It is observed that the temperature dependence of the intrinsic contribution to the magnetoresistance in La0.55Ho0.15Sr0.3MnO3 follows the prediction of double exchange model for all values of field.
9805258v1
2000-11-21
Anomalous NMR Spin-Lattice Relaxation in SrB_{6} and Ca_{1-x}La_{x}B_{6}
We report the results of {11}B nuclear magnetic resonance (NMR) measurements of SrB_{6} and Ca_{0.995}La_{0.05}B_{6} below room temperature. Although the electrical resistivities of these two materials differ substantially, their {11}B-NMR responses exhibit some strikingly common features. Both materials exhibit ferromagnetic order, but their {11}B-NMR spectra reveal very small hyperfine fields at the Boron sites. The spin lattice relaxation T_{1}^{-1} varies considerably with external field but changes with temperature only below a few K. We discuss these unusual results by considering various different scenarios for the electronic structure of these materials.
0011352v2
2004-07-17
Magneto - transport characterization of Dy123 monodomain superconductors
The following report considers textured materials of the DyBa2Cu3O7 type seeded with a Nd123 seed as initiator. They are grown with an excess 20% Dy211 phase on a Dy2O3 substrate. We report chemical characterizations, electrical resistivity, thermoelectric power and thermal conductivity over a broad temperature range as a function of an applied magnetic field up to 6 T. We show that specific features appear on the magneto thermal transport properties different in these materials from those found in single crystals and polycrystalline samples. We propose that two vortex regimes can be distinguished in the mixed phase, - due to the intrinsic microstructure. We calculate the viscosity, entropy and figure of merit of the samples.
0407463v1
2007-01-09
Pressure Study of Superconductivity and Magnetism in Pure and Rh-Doped RuSr2GdCu2O8 Materials
A hydrostatic pressure study was made on pure and Rh-doped specimens of the superconducting ferromagnetic compounds Ru1-xRhxSr2GdCu2O8 (x = 0-0.15) by means of measurement of electrical resistivity vs temperature, in pressures up to 2 GPa. Partial substitution of Rh for Ru decreases the magnetization of the material, lowers both the magnetic ordering temperature Tm, and the superconducting transition temperature Tc, and promotes granularity. The effect of pressure for all compositions is an increase in both the intra- and intergranular superconductivity transition temperatures, Tc and Tp respectively, as well as Tm. The rate of change of each transition temperature with pressure first drops for Rh concentrations near 5%, increasing latter for higher concentrations. While the rate of increase of Tc with pressure for all compositions is 2-3 times lower than in YBCO materials, the simultaneous increase of Tc and Tm with pressure could support the notion of competition between superconductivity and ferromagnetism in these materials. The effect of pressure on the weak-links was a significant improvement of inter-granular connectivity.
0701183v1
2007-04-25
Studies of the temperature and frequency dependent impedance of an electroceramic functional oxide thermistor
The charge transport mechanism and the macroscopic dielectric constant in polycrystalline device materials commonly exhibit several components such as electrode-sample interface, grain boundary and bulk contributions. In order to gain precise understanding of the functionality of polycrystalline electroceramic device materials it is essential to deconvolute these contributions. The paradigm of functional thermistor ceramics based on thick film spinel manganates has been studied by temperature dependent alternating current impedance spectroscopy. Three typical relaxation phenomena were detected, which all showed a separated temperature dependence of resistivity consistent with thermally activated charge transport. The dominating grain boundary and the interface contributions exhibited distinctively different capacitance allowing clear identification. The composite nature of the dielectric properties in polycrystalline functional ceramics was emphasized, and impedance spectroscopy was shown to be a powerful tool to account for and model such behaviour.
0704.3378v1
2007-07-17
Gate-induced insulating state in bilayer graphene devices
The potential of graphene-based materials consisting of one or a few layers of graphite for integrated electronics originates from the large room-temperature carrier mobility in these systems (approx. 10,000 cm2/Vs). However, the realization of electronic devices such as field-effect transistors will require controlling and even switching off the electrical conductivity by means of gate electrodes, which is made difficult by the absence of a bandgap in the intrinsic material. Here, we demonstrate the controlled induction of an insulating state - with large suppression of the conductivity - in bilayer graphene, by using a double-gate device configuration that allows an electric field to be applied perpendicular to the plane. The dependence of the resistance on temperature and electric field, and the absence of any effect in a single-layer device, strongly suggest that the gate-induced insulating state originates from the recently predicted opening of a bandgap between valence and conduction bands.
0707.2487v2
2009-05-12
Large magnetic entropy change near room temperature in antipervoskite SnCMn3
We report the observation of large magnetocaloric effect near room temperature in antipervoskite SnCMn3. The maximal magnetic entropy change at the first-order ferrimagnetic-paramagnetic transition temperature (TC 279 K) is about 80.69mJ/cm3 K and 133mJ/cm3 K under the magnetic field of 20 kOe and 48 kOe, respectively. These values are close to those of typical magnetocaloric materials. The large magnetocaloric effect is associated with the sharp change of lattice, resistivity and magnetization in the vicinity of TC. Through the measurements of Seebeck coefficient and normal Hall effect, the title system is found to undergo a reconstruction of electronic structure at TC. Considering its low-cost and innocuous raw materials, Mn-based antiperovskite compounds are suggested to be appropriate for pursuing new materials with larger magnetocaloric effect.
0905.1773v1
2009-06-28
Partial Kekule Ordering of Adatoms on Graphene
Electronic and transport properties of Graphene, a one-atom thick crystalline material, are sensitive to the presence of atoms adsorbed on its surface. An ensemble of randomly positioned adatoms, each serving as a scattering center, leads to the Bolzmann-Drude diffusion of charge determining the resistivity of the material. An important question, however, is whether the distribution of adatoms is always genuinely random. In this Article we demonstrate that a dilute adatoms on graphene may have a tendency towards a spatially correlated state with a hidden Kekule mosaic order. This effect emerges from the interaction between the adatoms mediated by the Friedel oscillations of the electron density in graphene. The onset of the ordered state, as the system is cooled below the critical temperature, is accompanied by the opening of a gap in the electronic spectrum of the material, dramatically changing its transport properties.
0906.5174v1
2012-02-13
Nanostructured antimony tin oxide synthesized via chemical precipitation method: its characterization and application in humidity sensing
In present investigation we report the synthesis of antimony tin oxide nanoparticles via chemical precipitation method. The synthesized material was characterized using X-ray diffractometer, Scanning Electron Microscope, UV-visible absorption spectroscopy. XRD shows the crystalline nature of the synthesized material and the crystallite size was estimated by using Debye-Scherer equation and its minimum value was 3 nm. Pelletization of synthesized material was done using hydraulic press machine under uniform pressure of 616 MPa. Then the pellets were annealed at 200, 400 and 600{\deg}C. Further each pellet was put in humidity sensing chamber and corresponding variations in resistance with relative humidity (%RH) were measured. The average sensitivity was calculated by taking the average of all sensitivities ranging from 10 to 90% RH. The average sensitivity of the pellet annealed at 600{\deg}C was best among all the sensing pellets and was 2.18 K{\Omega}/%RH. Results were reproducible {\pm}84% after 2 months.
1205.2336v1
2012-02-13
Effect of nanostructured zinc oxide additives on the humidity and temperature sensing properties of cuprous oxide
Present paper reports the effect of ZnO additives on humidity and temperature sensing properties of cuprous oxide. The cuprous oxide powder was mixed with 10% and 25% ZnO by weight and these samples were pelletized by using hydraulic pressing machine. The sensing materials were also investigated by Scanning Electron Microscope (SEM) and X-ray Diffraction (XRD). SEM images show morphology and porosity of material. The average particles size of cuprous oxide was found to be 1.2 micron. The sheet like structures of ZnO is evident in micrographs. From XRD all peaks are well identified and crystallite size for defferent peaks has also been calculated. The pellets of sensing materials were subjected to annealing at temperatures 200, 400 and 600 degrees C respectively and were exposed to humidity and temperature variations. Electrical resistances of pellets were found to vary with humidity and temperature and were recorded. The sensitivity of sensors at various temperature and humidity levels was calculated.
1205.2707v1
2012-05-29
Transport Properties of Ni, Co, Fe, Mn Doped Cu0.01Bi2Te2.7Se0.3 for Thermoelectric Device Applications
Bi2Te3 based thermoelectric devices typically use a nickel layer as a diffusion barrier to block the diffusion of solder or copper atoms from the electrode into the thermoelectric material. Previous studies have shown degradation in the efficiency of these thermoelectric devices may be due to the diffusion of the barrier layer into the thermoelectric material. In this work Ni, Co, Fe, and Mn are intentionally doped into Cu0.01Bi2Te2.7Se0.3 in order to understand their effects on the thermoelectric material. Thermoelectric transport properties including the Seebeck coefficient, thermal conductivity, electrical resistivity, carrier concentration, and carrier mobility of Cu0.01Bi2Te2.7Se0.3 doped with 2 atomic percent M (M=Ni, Co, Fe, Mn) as Cu0.01Bi2Te2.7Se0.3M0.02, are studied in a temperature range of 5-525 K.
1205.6377v1
2012-07-04
Colossal Magnetoresistance in the Mn2+ Oxypnictides NdMnAsO1-xFx
Colossal magnetoresistance (CMR) is a rare phenomenon in which the electronic resistivity of a material can be decreased by orders of magnitude upon application of a magnetic field. Such an effect could be the basis of the next generation of magnetic memory devices. Here we report CMR in the antiferromagnetic oxypnictide NdMnAsO1-xFx as a result of competition between an antiferromagnetic insulating phase with strong electron correlations and a paramagnetic semiconductor upon application of a magnetic field. The discovery of CMR in antiferromagnetic Mn2+ oxypnictide materials could open up an array of materials for further investigation and optimisation for technological applications.
1207.0958v1
2013-10-28
The d-p band-inversion topological insulator in bismuth-based skutterudites
Skutterudites, a class of materials with cage-like crystal structure which have received considerable research interest in recent years, are the breeding ground of several unusual phenomena such as heavy fermion superconductivity, exciton-mediated superconducting state and Weyl fermions. Here, we predict a new topological insulator in bismuth-based skutterudites, in which the bands involved in the topological band-inversion process are d- and p-orbitals, which is distinctive with usual topological insulators, for instance in Bi2Se3 and BiTeI the bands involved in the topological band-inversion process are only p-orbitals. Due to the present of large d-electronic states, the electronic interaction in this topological insulator is much stronger than that in other conventional topological insulators. The stability of the new material is verified by binding energy calculation, phonon modes analysis, and the finite temperature molecular dynamics simulations. This new material can provide nearly zero-resistivity signal current for devices and is expected to be applied in spintronics devices.
1310.7413v2
2015-05-21
Ferromagnetism in Cr-doped topological insulator TlSbTe2
We have synthesized a new ferromagnetic topological insulator by doping Cr to the ternary topological-insulator material TlSbTe2. Single crystals of Tl_{1-x}Cr_{x}SbTe2 were grown by a melting method and it was found that Cr can be incorporated into the TlSbTe2 matrix only within the solubility limit of about 1%. The Curie temperature \theta_c was found to increase with the Cr content but remained relatively low, with the maximum value of about 4 K. The easy axis was identified to be the c-axis and the saturation moment was 2.8 \mu_B (Bohr magneton) at 1.8 K. The in-plane resistivity of all the samples studied showed metallic behavior with p-type carriers. Shubnikov-de Hass (SdH) oscillations were observed in samples with the Cr-doping level of up to 0.76%. We also tried to induce ferromagnetism in TlBiTe2 by doping Cr, but no ferromagnetism was observed in Cr-doped TlBiTe2 crystals within the solubility limit of Cr which turned out to be also about 1%.
1505.05631v1
2016-11-22
Statistical Methods for Thermal Index Estimation Based on Accelerated Destructive Degradation Test Data
Accelerated destructive degradation test (ADDT) is a technique that is commonly used by industries to access material's long-term properties. In many applications, the accelerating variable is usually the temperature. In such cases, a thermal index (TI) is used to indicate the strength of the material. For example, a TI of 200C may be interpreted as the material can be expected to maintain a specific property at a temperature of 200C for 100,000 hours. A material with a higher TI possesses a stronger resistance to thermal damage. In literature, there are three methods available to estimate the TI based on ADDT data, which are the traditional method based on the least-squares approach, the parametric method, and the semiparametric method. In this chapter, we provide a comprehensive review of the three methods and illustrate how the TI can be estimated based on different models. We also conduct comprehensive simulation studies to show the properties of different methods. We provide thorough discussions on the pros and cons of each method. The comparisons and discussion in this chapter can be useful for practitioners and future industrial standards.
1611.07412v1
2017-11-07
Fracture toughness characterization through notched small punch test specimens
In this work a novel methodology for fracture toughness characterization by means of the small punch test (SPT) is presented. Notched specimens are employed and fracture resistance is assessed through a critical value of the notch mouth displacement {\delta^SPT}. Finite element simulations and interrupted experiments are used to track the evolution of {\delta^SPT} as a function of the punch displacement. The onset of crack propagation is identified by means of a ductile damage model and the outcome is compared to the crack tip opening displacement estimated from conventional tests at crack initiation. The proposed numerical-experimental scheme is examined with two different grades of CrMoV steel and the differences in material toughness captured. Limitations and uncertainties arising from the different damage phenomena observed in the lowest toughness material examined are thoroughly discussed.
1711.02406v1
2018-04-03
Combination of thermal and electric properties measurement techniques in a single setup suitable for radioactive materials in controlled environments and based on the 3-omega approach
We have designed and developed a new experimental setup, based on the 3-omega method, to measure thermal conductivity, heat capacity and electrical resistivity of a variety of samples in a broad temperature range (2-550 K) and under magnetic fields up to 9 T. The validity of this method is tested by measuring various types of metallic (copper, platinum, and constantan) and insulating (SiO_2) materials, which have a wide range of thermal conductivity values (1-400 Wm-1K-1). We have successfully employed this technique for measuring the thermal conductivity of two actinide single crystals, uranium dioxide, and uranium nitride. This new experimental approach for studying nuclear materials will help to advance reactor fuel development and understanding. We have also shown that this experimental setup can be adapted to the Physical Property Measurement System (Quantum Design) environment and/or other cryocooler systems.
1804.00821v1
2018-11-02
Non-Equilibrium Phonon Transport Across Nanoscale Interfaces
Despite the ubiquity of applications of heat transport across nanoscale interfaces, including integrated circuits, thermoelectrics, and nanotheranostics, an accurate description of phonon transport in these systems remains elusive. Here we present a theoretical and computational framework to describe phonon transport with position, momentum and scattering event resolution. We apply this framework to a single material spherical nanoparticle for which the multidimensional resolution offers insight into the physical origin of phonon thermalization, and length-scale dependent anisotropy of steady-state phonon distributions. We extend the formalism to handle interfaces explicitly and investigate the specific case of semi-coherent materials interfaces by computing the coupling between phonons and interfacial strain resulting from aperiodic array of misfit dislocations. Our framework quantitatively describes the thermal interface resistance within the technologically relevant Si-Ge heterostructures. In future, this formalism could provide new insight into coherent and driven phonon effects in nanoscale materials increasingly accessible via ultrafast, THz and near-field spectroscopies.
1811.01059v1
2018-11-07
Spin Hall effect in 2D metallic delafossite PtCoO$_2$ and vicinity topology
The two-dimensional (2D) metal PtCoO$_2$ is renowned for the lowest room temperature resistivity among all oxides, close to that of the top two materials Ag and Cu. In addition, we theoretically predict a strong intrinsic spin Hall effect. This originates from six strongly-tilted Dirac cones that we find in the electronic structure near the Fermi surface, where a gap is opened by large spin-orbit coupling (SOC). This is underpinned by rich topological properties; in particular, the phenomenology of a mirror Chern metal is realized not exactly, but very accurately, on account of an approximate crystalline symmetry. We expect that such 'vicinity topology' to be a feature of relevance well beyond this material. Our Wilson loop analysis indicates further elaborate features such as fragile topology. These findings highlight PtCoO$_2$ as a promising material for spintronic applications as well as a platform to study the interplay of symmetry and topology.
1811.03105v1
2020-03-22
Thermoelectric probe of defect state induced by ionic liquid gating in vanadium dioxide
Thermoelectric measurements detect the asymmetry between the density of states above and below the chemical potential in a material. It provides insights into small variations in the density of states near the chemical potential, complementing electron transport measurements. Here, combined resistance and thermoelectric power measurements are performed on vanadium dioxide (VO2), a prototypical correlated electron material, under ionic-liquid (IL) gating. With IL gating, charge transport below the metal-to-insulator-transition (MIT) temperature remains in the thermally activated regime, while the Seebeck coefficient exhibits an apparent transition from semiconducting to metallic behavior. The contrasting behavior indicates changes in electronic structure upon IL gating, due to the formation of oxygen defect states. The experimental results are corroborated by numerical simulations based on a model density of states incorporating a gating induced defect band. This study reveals thermoelectric measurements to be a convenient and sensitive probe for the role of defect states induced by IL gating in suppressing the MIT in VO2, which remains benign in charge transport measurements, and possibly for studying defect sates in other materials.
2003.09840v1
2017-03-10
Highly crystalline 2D superconductors
Recent technological advances in controlling materials have developed methods to produce idealized two-dimensional (2D) electron systems such as heterogeneous interfaces, molecular-beam-epitaxy (MBE) grown atomic layers, exfoliated thin flakes and field-effect devices. These 2D electron systems are highly-crystalline with less disorder in common, some of which indeed show sheet resistance more than one order of magnitude lower even in atomic layers or single layers than that of conventional amorphous/granular thin films. Here, we present a review on the recent developments of highly-crystalline 2D superconductors and a series of unprecedented physical properties discovered in these systems. In particular, we highlight the quantum metallic state (or possible metallic ground state), the quantum Griffiths phase in out-of-plane magnetic fields, and the superconducting state maintained in anomalously large in-plane magnetic fields, which were observed in exfoliated 2D materials, MBE-grown atomic-layer thin films and electric-double-layer (ion-gated) interfaces. These phenomena are discussed on the basis of weakened disorder and/or broken spatial inversion symmetry. These novel aspects suggest that highly-crystalline 2D systems are promising platforms for exploring new quantum physics and superconductors.
1703.03541v1
2018-10-07
Log-periodic quantum magneto-oscillations and discrete scale invariance in topological material HfTe5
Discrete scale invariance (DSI) is a phenomenon featuring intriguing log-periodicity which can be rarely observed in quantum systems. Here we report the log-periodic quantum oscillations in the magnetoresistance (MR) and the Hall traces of HfTe5 crystals, which reveals the appearance of DSI. The oscillations show the same logB-periodicity in the behavior of MR and Hall, indicating an overall effect of the DSI on the transport properties. Moreover, the DSI feature in the Hall resistance signals its close relation to the carriers. Combined with theoretical simulations, we further clarify the origin of the log-periodic oscillations and the DSI in the topological materials. Our work evidences the universality of the DSI in the Dirac materials and paves way for the full understanding of the novel phenomenon.
1810.03109v1
2019-02-20
Structural origins of electronic conduction in amorphous copper-doped alumina
We perform an {\it ab initio} modeling of amorphous copper-doped alumina (a-Al$_2$O$_3$:Cu), a prospective memory material based on resistance switching, and study the structural origin of electronic conduction in this material. We generate molecular dynamics based models of a-Al$_2$O$_3$:Cu at various Cu-concentrations and study the structural, electronic and vibrational properties as a function of Cu-concentration. Cu atoms show a strong tendency to cluster in the alumina host, and metallize the system by filling the band gap uniformly for higher Cu-concentrations. We also study thermal fluctuations of the HOMO-LUMO energy splitting and observe the time evolution of the size of the band gap, which can be expected to have an important impact on the conductivity. We perform a numerical computation of conduction pathways, and show its explicit dependence on Cu connectivity in the host. We present an analysis of ion dynamics and structural aspects of localization of classical normal modes in our models.
1902.07559v1
2017-04-03
Superconducting Two-Dimensional Metal-Organic Framework
Superconductivity is a fascinating quantum phenomenon characterized by zero electrical resistance and the Meissner effect. To date, several distinct families of superconductors (SCs) have been discovered. These include three-dimensional (3D) bulk SCs in both inorganic and organic materials as well as two-dimensional (2D) thin film SCs but only in $inorganic$ materials. Here we predict superconductivity in 2D and 3D $organic$ metal-organic frameworks by using first-principles calculations. We show that the highly conductive and recently synthesized Cu-benzenehexathial (BHT) is a Bardeen-Cooper-Schrieffer SC. Remarkably, the monolayer Cu-BHT has a critical temperature ($T_{c}$) of 4.43 K while $T_{c}$ of bulk Cu-BHT is 1.58 K. Different from the enhanced $T_{c}$ in 2D inorganic SCs which is induced by interfacial effects, the $T_{c}$ enhancement in this 2D organic SC is revealed to be the out-of-plane soft-mode vibrations, analogous to surface mode enhancement originally proposed by $Ginzburg$. Our findings not only shed new light on better understanding 2D superconductivity, but also open a new direction to search for SCs by interface engineering with organic materials.
1704.00490v1
2019-08-07
Transport phenomena in a free-standing two-dimensional sodium sheet
The advances in the growth techniques provide numerous scope to explore the possibilities of new 2D materials for potential applications. With the aid of first-principle calculations we show that 2D Na can be a new addition to the family of thermodynamically stable 2D materials for device applications. Not surprisingly, due to half-occupied $3s$ orbital 2D Na possesses the features of the 2D electron gas (2DEG). The transport properties are examined based on the accurate solution of Boltzmann transport equation. With practically tunable carrier density in 2D materials, the intrinsic electrical resistivity of electron doped 2D Na is $\sim$ 1.4 times larger than that of graphene and falls below the latter 450 K onwards. The Bloch-Gr\"uneisen temperature is almost constant at 50 K, independent of the type or density of the charge carriers. The electronic thermal conductivity of pure 2D Na is $\sim$ 1.24 times larger than that of its bulk counterpart at 300 K. The Wiedemann-Franz law stands tall in 2D Na with calculated Lorenz number 2.41 $\times 10^{-8} V^2/deg^2$ at room temperature. The transport mechanism presented here is expected to occur in all Na like systems with a clean Fermi surface.
1908.02431v1
2019-12-18
Observation of multiple Dirac states in a magnetic topological material EuMg2Bi2
Initiated by the discovery of topological insulators, topologically non-trivial materials, more specifically topological semimetals and metals have emerged as new frontiers in the field of quantum materials. In this work, we perform a systematic measurement of EuMg2Bi2, a compound with antiferromagnetic transition temperature at 6.7 K, observed via electrical resistivity, magnetization and specific heat capacity measurements. By utilizing angle-resolved photoemission spectroscopy in concurrence with first-principles calculations, we observe Dirac cones at the corner and the zone center of the Brillouin zone. From our experimental data, multiple Dirac states at G and K points are observed, where the Dirac nodes are located at different energy positions from the Fermi level. Our experimental investigations of detailed electronic structure as well as transport measurements of EuMg2Bi2 suggest that it could potentially provide a platform to study the interplay between topology and magnetism.
1912.08645v1
2012-03-28
Finite element modelling of shock-induced damages on ceramic hip prostheses
The aim of this work was to simulate the behaviour of hip prostheses under mechanical shocks. When hip joint is replaced by prosthesis, during the swing phase of the leg, a microseparation between the prosthetic head and the cup could occur. Two different sizes of femoral heads were studied: 28 and 32 mm diameter, made, respectively, in alumina and zirconia. The shock-induced stress was determined numerically using finite element analysis (FEA), Abaqus software. The influence of inclination, force, material, and microseparation was studied. In addition, an algorithm was developed from a probabilistic model, Todinov's approach, to predict lifetime of head and cup. Simulations showed maximum tensile stresses were reached on the cup's surfaces near to rim. The worst case was the cup-head mounted at 30^{\circ}. All simulations and tests showed bulk zirconia had a greater resistance to shocks than bulk alumina. The probability of failure could be bigger than 0.9 when a porosity greater than 0.7% vol. is present in the material. Simulating results showed good agreement with experimental results. The tests and simulations are promising for predicting the lifetime of ceramic prostheses.
1203.6154v1
2015-04-20
Giant reversible nanoscale piezoresistance at room temperature in Sr2IrO4 thin films
Layered iridates have been the subject of intense scrutiny on account of their unusually strong spin-orbit coupling, which opens up a narrow gap in a material that would otherwise be a metal. This insulating state is very sensitive to external perturbations. Here, we show that vertical compression at the nanoscale, delivered using the tip of a standard scanning probe microscope, is capable of inducing a five orders of magnitude change in the room temperature resistivity of Sr2IrO4. The extreme sensitivity of the electronic structure to anisotropic deformations opens up a new angle of interest on this material, and the giant and fully reversible perpendicular piezoresistance makes iridates a promising material for room temperature piezotronic devices.
1504.05245v1
2018-12-06
Crack Growth Behavior in NiTi Shape Memory Alloys Under Mode-I Isothermal Loading: Effect of Stress State
Fracture behavior in nickel-titanium (NiTi) shape memory alloys (SMAs) subjected to mode-I, isothermal loading is studied using finite element analysis (FEA). Compact tension (CT) SMA specimen is modeled in Abaqus finite element suite and crack growth under displacement boundary condition is investigated for plane strain and plane stress conditions. Parameters for the SMA material constitutive law implemented in the finite element setup are acquired from characterization tests conducted on near-equiatomic NiTi SMA. Virtual crack closure technique (VCCT) is implemented where crack is assumed to extend when the energy release rate at the crack-tip becomes equal to the experimentally obtained material-specific critical value. Load-displacement curves and mechanical fields near the crack-tip in plane strain and plane stress cases are examined. Moreover, a discussion with respect to the crack resistance R-curves calculated using the load-displacement response for plane strain and plane stress conditions is presented.
1812.02362v1
2018-12-24
Control of Spin Diffusion and Suppression of the Hanle Effect by the Coexistence of Spin and Valley Hall Effects
In addition to spin, electrons in many materials possess an additional pseudo-spin degree of freedom known as 'valley'. In materials where the spin and valley degrees of freedom are weakly coupled, they can be both excited and controlled independently. In this work, we study a model describing the interplay of the spin and valley Hall effects in such two-dimensional materials. We demonstrate the emergence of an additional longitudinal neutral current that is both spin and valley polarized. The additional neutral current allows to control the spin density by tuning the magnitude of the valley Hall effect. In addition, the interplay of the two effects can suppress the Hanle effect, that is, the oscillation of the nonlocal resistance of a Hall bar device with in-plane magnetic field. The latter observation provides a possible explanation for the absence of the Hanle effect in a number of recent experiments. Our work opens also the possibility to engineer the conversion between the valley and spin degrees of freedom in two-dimensional materials.
1812.09996v2
2019-06-24
Cross interface model for the thermal transport across interface between overlapped boron nitride nanoribbons
The application of low-dimensional materials for heat dissipation requires a comprehensive understanding of the thermal transport at the cross interface, which widely exists in various composite materials and electronic devices. In this work, we proposed an analytical model, named as cross interface model (CIM), to accurately reveal the essential mechanism of the two-dimensional thermal transport at the cross interface. The applicability of CIM is validated through the comparison of the analytical results with molecular dynamics simulations for a typical cross interface of two overlapped boron nitride nanoribbons. Besides, it is figured out that the factor ({\eta}) has important influence on the thermal transport besides the thermal resistance inside and between the materials, which is found to be determined by two dimensionless parameters from its expression. Our investigations deepen the understanding of the thermal transport at the cross interface and also facilitate to guide the applications of low-dimensional materials in thermal management.
1906.09751v1
2019-11-05
Molecular beam epitaxy of CuMnAs
We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth conditions and their effect on the microstructural and transport properties of the material. We identify its typical structural defects and compare the properties of epitaxial CuMnAs layers grown on GaP, GaAs and Si substrates. Finally, we investigate the correlation between the crystalline quality of CuMnAs and its performance in terms of electrically induced resistance switching.
1911.01794v1
2019-11-15
Flexoskeleton printing for versatile insect-inspired robots
One of the many secrets to the success and prevalence of insects is their versatile, robust, and complex exoskeleton morphology. A fundamental challenge in insect-inspired robotics has been the fabrication of robotic exoskeletons that can match the complexity of exoskeleton structural mechanics. Hybrid robots composed of rigid and soft elements have previously required access to expensive multi-material 3D printers, multi-step casting and machining processes, or limited material choice when using consumer-grade fabrication methods. Here we introduce a new design and fabrication process to rapidly construct flexible exoskeleton-inspired robots called flexoskeleton printing. We modify a consumer-grade fused deposition material (FDM) 3D printer to deposit filament directly onto a heated thermoplastic base layer which provides extremely strong bond strength between the deposited material and the inextensible, flexible base layer. This process significantly improves the fatigue resistance of printed components and enables a new class of insect-inspired robot morphologies. We demonstrate these capabilities through design and testing of a wide library of canonical flexoskeleton elements; ultimately leading to the integration of elements into a flexoskeleton walking legged robot.
1911.06897v2
2020-01-07
Molecular beam epitaxy of the magnetic kagome metal FeSn on LaAlO3 (111)
Materials with a layered Kagome lattice are expected to give rise to novel physics arising from band structures with topological properties, spin liquid behavior and the formation of skyrmions. Until now, most work on Kagome materials has been performed on bulk samples due to difficulties in thin film synthesis. Here, by using molecular beam epitaxy, layered Kagome-structured FeSn films are synthesized on (111) oriented LaAlO3 substrate. Both in-situ and ex-situ characterizations indicate these films are highly crystalline and c-axis oriented, with atomically smooth surfaces. However, the films grow as disconnected islands, with lateral dimensions on the micron scale. By patterning Pt electrodes using a focused electron beam, longitudinal and transverse resistance of single islands have been measured in magnetic fields. Our work opens a pathway for exploring mesoscale transport properties in thin films of Kagome materials and related devices.
2001.01820v2
2020-05-11
Highly flexible electromagnetic interference shielding films based on ultrathin Ni/Ag composites on paper substrates
Highly flexible electromagnetic interference (EMI) shielding material with excellent shielding performance is of great significance to practical applications in next-generation flexible devices. However, most EMI materials suffer from insufficient flexibility and complicated preparation methods. In this study, we propose a new scheme to fabricate a magnetic Ni particle/Ag matrix composite ultrathin film on a paper surface. For a ~2 micro meter thick film on paper, the EMI shielding effectiveness (SE) was found to be 46.2 dB at 8.1 GHz after bending 200,000 times over a radius of ~2 mm. The sheet resistance (Rsq) remained lower than 2.30 Ohm after bending 200,000 times. Contrary to the change in Rsq, the EMI SE of the film generally increased as the weight ratio of Ag to Ni increased, in accordance with the principle that EMI SE is positively related with an increase in electrical conductivity. Desirable EMI shielding ability, ultrahigh flexibility, and simple processing provide this material with excellent application prospects.
2005.04875v1
2020-08-19
Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction
Controlling the stacking of van der Waals (vdW) materials is found to produce exciting new findings, since hetero- or homo- structures have added the diverse possibility of assembly and manipulated functionalities. However, so far, the homostructure with a twisted angle based on the magnetic vdW materials remains unexplored. Here, we achieved a twisted magnetic vdW Fe3GeTe2/Fe3GeTe2 junction with broken crystalline symmetry. A clean and metallic vdW junction is evidenced by the temperature-dependent resistance and the linear I-V curve. Unlike the pristine FGT, a plateau-like magnetoresistance (PMR) is observed in the magnetotransport of our homojunction due to the antiparallel magnetic configurations of the two FGT layers. The PMR ratio is found to be ~0.05% and gets monotonically enhanced as temperature decreases like a metallic giant magnetoresistance (GMR). Such a tiny PMR ratio is at least three orders of magnitude smaller than the tunneling magnetoresistance (TMR) ratio, justifying our clean metallic junction without a spacer. Our findings demonstrate the feasibility of the controllable homostructure and shed light on future spintronics using magnetic vdW materials.
2008.08313v1
2020-10-24
Drawing WS2 thermal sensors on paper substrates
Paper based thermoresistive sensors are fabricated by rubbing WS2 powder against a piece of standard copier paper, like the way a pencil is used to write on paper. The abrasion between the layered material and the rough paper surface erodes the material, breaking the weak van der Waals interlayer bonds, yielding a film of interconnected platelets. The resistance of WS2 presents a strong temperature dependence, as expected for a semiconductor material in which charge transport is due to thermally activated carriers. This strong temperature dependence makes the paper supported WS2 devices extremely sensitive to small changes in temperature. This exquisite thermal sensitivity, and their fast response times to sudden temperature changes, is exploited thereby demonstrating the usability of a WS2-on-paper thermal sensor in a respiration monitoring device.
2010.12805v1
2021-04-08
Correlating Nanocrystalline Structure with Electronic Properties in 2D Platinum Diselenide
Platinum diselenide (PtSe${_2}$) is a two-dimensional (2D) material with outstanding electronic and piezoresistive properties. The material can be grown at low temperatures in a scalable manner which makes it extremely appealing for many potential electronics, photonics, and sensing applications. Here, we investigate the nanocrystalline structure of different PtSe${_2}$ thin films grown by thermally assisted conversion (TAC) and correlate them with their electronic and piezoresistive properties. We use scanning transmission electron microscopy for structural analysis, X-ray photoelectron spectroscopy (XPS) for chemical analysis, and Raman spectroscopy for phase identification. Electronic devices are fabricated using transferred PtSe${_2}$ films for electrical characterization and piezoresistive gauge factor measurements. The variations of crystallite size and their orientations are found to have a strong correlation with the electronic and piezoresistive properties of the films, especially the sheet resistivity and the effective charge carrier mobility. Our findings may pave the way for tuning and optimizing the properties of TAC-grown PtSe${_2}$ towards numerous applications.
2104.03636v1
2021-09-16
Analytic solution to pseudo-Landau levels in strongly bent graphene nanoribbons
Nonuniform elastic strain is known to induce pseudo-Landau levels in Dirac materials. But these pseudo-Landau levels are hardly resolvable in an analytic fashion when the strain is strong, because of the emerging complicated space dependence in both the strain-modulated Fermi velocity and the strain-induced pseudomagnetic field. We analytically characterize the solution to the pseudo-Landau levels in experimentally accessible strongly bent graphene nanoribbons, by treating the effects of the nonuniform Fermi velocity and pseudomagnetic field on equal footing. The analytic solution is detectable through the angle-resolved photoemission spectroscopy (ARPES) and allows quantitative comparison between theories and various transport experiments, such as the Shubnikov-de Haas oscillation in the complete absence of magnetic fields and the negative strain-resistivity resulting from the valley anomaly. The analytic solution can be generalized to twisted two-dimensional materials and topological materials and will shed a new light on the related experimental explorations and straintronics applications.
2109.08182v2
2021-09-27
Layered, Tunable Graphene Oxide-Nylon Heterostructures for Wearable Electrocardiogram Sensors
Nanoscale engineered materials combined with wearable wireless technologies can deliver a new level of health monitoring. A reduced graphene oxide-nylon composite material is developed and tested, demonstrating its usefulness as a material for sensors in wearable, long-term electrocardiogram (ECG) monitoring via a comparison to one of the widely used ECG sensors. The structural analysis by scanning electron (SEM) and atomic force microscopy (AFM) shows a limited number of defects on a macroscopic scale. Fourier Transform Infrared (FTIR) and Raman spectroscopy confirm the presence of rGOx, and the ratio of D- and G-features as a function of thickness correlates with the resistivity analysis. The negligible effect of the defects and the tunability of electrical and optical properties, together with live ECG data, demonstrate its signal transduction capability.
2109.12739v2
2022-04-30
Scattering mechanisms in state-of-the-art GaAs/AlGaAs quantum wells
Motivated by recent breakthrough in molecular beam epitaxy of GaAs/AlGaAs quantum wells [Y. J. Chung \textit{et al.}, Nature Materials \textbf{20}, 632 (2021)], we examine contributions to mobility and quantum mobility from various scattering mechanisms and their dependencies on the electron density. We find that at lower electron densities, $n_e \lesssim 1 \times 10^{11}$ cm$^{-2}$, both transport and quantum mobility are limited by unintentional background impurities and follow a power law dependence, $\propto n_e^{\alpha}$, with $\alpha \approx 0.85$. Our predictions for quantum mobility are in reasonable agreement with an estimate obtained from the resistivity at filling factor $\nu= 1/2$ in a sample of Y. J. Chung \textit{et al.} with $n_e = 1 \times 10^{11}$ cm$^{-2}$. Consideration of other scattering mechanisms indicates that interface roughness (remote donors) is a likely limiting factor of transport (quantum) mobility at higher electron densities. Future measurements of quantum mobility should yield information on the distribution of background impurities in GaAs and AlGaAs.
2205.00365v3
2023-07-20
Superconductivity in a van der Waals layered quasicrystal
van der Waals (vdW) layered transition-metal chalcogenides are attracting significant attention owing to their fascinating physical properties. This group of materials consists of abundant members with various elements, having a variety of different structures. However, all vdW layered materials studied to date have been limited to crystalline materials, and the physical properties of vdW layered quasicrystals have not yet been reported. Here, we report on the discovery of superconductivity in a vdW layered quasicrystal of Ta1.6Te. The electrical resistivity, magnetic susceptibility, and specific heat of the Ta1.6Te quasicrystal fabricated by reaction sintering, unambiguously validated the occurrence of bulk superconductivity at a transition temperature of ~1 K. This discovery can pioneer new research on assessing the physical properties of vdW layered quasicrystals as well as two-dimensional quasicrystals; moreover, it paves the way toward new frontiers of superconductivity in thermodynamically stable quasicrystals, which has been the predominant challenge facing condensed matter physics since the discovery of quasicrystals almost four decades ago.
2307.10679v1
2023-08-21
Coupling Between Magnetic and Transport Properties in Magnetic Layered Material Mn2-xZnxSb
We synthesized single crystals for Mn2-xZnxSb and studied their magnetic and electronic transport properties. This material system displays rich magnetic phase tunable with temperature and Zn composition. In addition, two groups of distinct magnetic and electronic properties, separated by a critical Zn composition of x = 0.6, are discovered. The Zn-less samples are metallic and characterized by a resistivity jump at the magnetic ordering temperature, while the Zn-rich samples lose metallicity and show a metal-to-insulator transition-like feature tunable by magnetic field. Our findings establish Mn2-xZnxSb as a promising material platform that offers opportunities to study how the coupling of spin, charge, and lattice degrees of freedom governs interesting transport properties in 2D magnets, which is currently a topic of broad interest.
2308.10764v1
2023-10-08
An innovative clay metaBrick-based motif to enhance thermal and acoustic insulation
Metamaterials have gained popularity in recent years as a promising avenue for producing innovative materials with distinctive properties that offer unprecedented features. In this study, we address the thermal and acoustic challenges of building materials. We numerically and experimentally investigate a clay metaBrick, which is an innovative metamaterial design based on the existing hollow brick that has shown strong sound and thermal performances. We evaluate the acoustic and thermal characteristics of the clay metaBrick, including sound transmission and heat resistance, using the finite element method. Furthermore, we validate the results experimentally by investigating the behaviors of the wall built on metaBricks in two tests: sound and thermal. We contrast the findings of the metaBrick based wall with performances of a standard hollow brick wall. The metaBrick offers enhanced acoustic and thermal insulation properties compared to the standard brick, with a compressive strength above standards required in the building materials.
2310.05148v1
2024-03-18
The Role of Temperature on Irradiation Defect Evolution near Surfaces and Grain Boundaries in Tungsten
This study explores the impact of temperature on defect dynamics in tungsten, emphasizing its application in nuclear fusion reactors as Plasma Facing Components (PFCs). Through atomistic simulations, the research elucidates the intricate interplay of defect production, annihilation, and redistribution under irradiation at room (300K) and elevated temperatures (1000K). It demonstrates that higher temperatures significantly increase the number and mobility of defects, leading to a substantial rise in the total number of surviving Frenkel Pairs (FPs), with a notable preference for surface distribution. This redistribution is attributed to energy gradient-driven relocation processes, enhanced by the defects' increased mobility at elevated temperatures. Moreover, the study reveals that elevated temperatures promote biased accumulation of interstitial defects in grain boundaries, especially in configurations that facilitate efficient interstitial migration, indicating a strategy for minimizing lattice interstitial accumulation under irradiation. These findings underscore the critical role of temperature in modulating irradiation-induced defect dynamics in tungsten, providing valuable insights for designing and selecting materials with optimized irradiation resistance for use in extreme conditions of nuclear fusion reactors. The research suggests a material design approach that accounts for temperature effects to enhance the durability and performance of nuclear fusion materials.
2403.12259v1
2024-03-19
Unveiling the Reactivity of Oxygen and Ozone on C2N Monolayer: A First-Principles Study
The process of environmental oxidation is pivotal in determining the physical and chemical properties of two-dimensional (2D) materials. Its impact holds great significance for the practical application of these materials in nanoscale devices functioning under ambient conditions. This study delves into the influence of O2 and O3 exposure on the structural and electronic characteristics of the C2N monolayer, focusing on the kinetics of adsorption and dissociation reactions. Employing first-principles density functional theory calculations alongside climbing image nudged elastic band calculations, we observe that the C2N monolayer exhibits resistance to oxidation and ozonation, evidenced by energy barriers of 0.05 eV and 0.56 eV, respectively. These processes are accompanied by the formation of epoxide (C-O-C) groups. Furthermore, the dissociation mechanism involves charge transfers from the monolayer to the molecules. Notably, the dissociated configurations demonstrate higher bandgaps compared to the pristine C2N monolayer, attributed to robust C-O hybridization. These findings suggest the robustness of C2N monolayers against oxygen/ozone exposures, ensuring stability for devices incorporating these materials.
2403.12454v1
2024-05-13
Significant improvement in sensitivity of an anomalous Nernst heat flux sensor by composite structure
Heat flux sensors (HFS) have attracted significant interest for their potential in managing waste heat efficiently. A recently proposed HFS, that works on the basis of the anomalous Nernst effect (ANE), offers several advantages in its simple structure leading to easy fabrication, low cost, and reduced thermal resistance. However, enhancing sensitivity through traditional material selection is now challenging due to a small number of materials satisfying the required coexistence of a large transverse Seebeck coefficient and low thermal conductivity. In this study, by utilizing composite structures and optimizing the device geometry, we have achieved a substantial improvement in the sensitivity of an ANE-based HFS. We developed composite structures comprised of a plastic substrate with an uneven surface and three-dimensional (3D) uneven TbCo films, fabricated using nanoimprint techniques and sputtering. This approach resulted in a sensitivity that is approximately four times greater than that observed in previous studies. Importantly, this method is independent of the material properties and can significantly enhance the sensitivity. Our findings could lead to the development of highly sensitive HFS devices and open new avenues for the fabrication of 3D devices.
2405.07758v1
2003-08-25
Formation of Semi-relativisitc Jets from Magnetospheres of Accreting Neutron Stars: Injection of Hot Bubbles into a Magnetic Tower
We present the results of 2.5-dimensional resistive magnetohydrodynamic (MHD) simulations of the magnetic interaction between a weakly magnetized neutron star and its accretion disk. General relativistic effects are simulated by using the pseudo-Newtonian potential. We find that well-collimated jets traveling along the rotation axis of the disk are formed by the following mechanism: (1) The magnetic loops connecting the neutron star and the disk are twisted due to the differential rotation between the neutron star and the disk. (2) Twist injection from the disk initiates expansion of the loop. (3) The expanding magnetic loops create a magnetic tower in which accelerated disk material travel as collimated bipolar jets. The propagation speed of the working surface of the jet is the order of 10% of the speed of light ($\sim 0.1c$). (4) Magnetic reconnection taking place inside the expanding magnetic loops injects hot bubbles intermittently into the magnetic tower. The ejection speed of the bubble is the order of the local Alfv\'{e}n speed of the launching point and $\sim 0.2c$ in our simulations. (5) The hot bubbles moving inside the tower catch up with the working surface of the jet. High energy electrons created by the magnetic reconnection are a plausible source of radio emission. Our model can explain the formation process of a narrow jet from a weakly magnetized ($|{\boldmath$B_{*}$}|\le 10^{9}$ gauss) neutron star and the correlation between radio flares of the core and of the lobe observed in Sco X-1.
0308437v2
2009-01-28
Strong enhancement of Jc in binary and alloyed in-situ MgB2 wires by a new approach: Cold high pressure densification
Cold high pressure densification (CHPD) is presented as a new way to substantially enhance the critical current density of in situ MgB2 wires at 4.2 and 20 K at fields between 5 and 14 T. The results on two binary MgB2 wires and an alloyed wire with 10 wt.% B4C are presented The strongest enhancement was measured at 20K, where cold densification at 1.85 GPa on a binary Fe/MgB2 wire raised both Jcpara and Jcperp by more than 300% at 5T, while Birr was enhanced by 0.7 T. At 4.2K, the enhancement of Jc was smaller, but still reached 53% at 10 T. After applying pressures up to 6.5 GPa, the mass density dm of the unreacted (B+Mg) mixture inside the filaments reached 96% of the theoretical density. After reaction under atmospheric pressure, this corresponds to a highest mass density df in the MgB2 filaments of 73%. After reaction, the electrical resistance of wires submitted to cold densification was found to decrease, reflecting an improved connectivity. A quantitative correlation between filament mass density and the physical properties was established. Monofilamentary rectangular wires with aspect ratios a/b < 1.25 based on low energy ball milled powders exhibited very low anisotropy ratios, Gamma = Jcpara/Jcperp being < 1.4 at 4.2 K and 10T. The present results can be generalized to alloyed MgB2 wires, as demonstrated on a wire with B4C additives. Based on the present data, it follows that cold densification has the potential of further improving the highest Jcpara and Jcperp values reported so far for in situ MgB2 tapes and wires with SiC and C additives. Investigations are under work in our laboratory to determine whether the densification method CHPD can be applied to longer wire or tape lengths.
0901.4546v1
2011-01-24
Stabilization of an ambient pressure, collapsed tetragonal phase in CaFe2As2 and tuning of the orthorhombic / antiferromagnetic transition temperature by over 70 K by control of nano-precipitates
We have found a remarkably large response of the transition temperature of CaFe2As2 single crystals grown out of excess FeAs to annealing / quenching temperature. Whereas crystals that are annealed at 400 C exhibit a first order phase transition from a high temperature tetragonal to a low temperature orthorhombic and antiferromagnetic state near 170 K, crystals that have been quenched from 960 C exhibit a transition from a high temperature tetragonal phase to a low temperature, non-magnetic, collapsed tetragonal phase below 100 K. By use of temperature dependent electrical resistivity, magnetic susceptibility, X-ray diffraction, Mossbauer spectroscopy and nuclear magnetic resonance measurements we have been able to demonstrate that the transition temperature can be reduced in a monotonic fashion by varying the annealing / quenching temperature from 400 to 850 C with the low temperature state remaining antiferromagnetic for transition temperatures larger than 100 K and becoming collapsed tetragonal / non-magnetic for transition temperatures below 90 K. This suppression of the orthorhombic / antiferromagnetic phase transition and its ultimate replacement with the collapsed tetragonal / non-magnetic phase is similar to what has been observed for CaFe2As2 under hydrostatic pressure. Transmission electron microscopy studies indicate that there is a temperature dependent, width of formation of CaFe2As2 with a decreasing amount of excess Fe and As being soluble in the single crystal at lower annealing temperatures. For samples quenched from 960 C there is a fine (of order 10 nm), semi-uniform distribution of precipitate that can be associated with an average strain field whereas for samples annealed at 400 C the excess Fe and As form mesoscopic grains that induce little strain throughout the CaFe2As2 lattice.
1101.4595v1
2011-10-14
Numerical Investigation of Design Strategies to Achieve Long-Life Pavements
Increasing the HMA base thickness and modifying the HMA mixture properties to improve the resistance to fatigue cracking are among the most popular methods for achieving long-lasting pavements. Such methods are based on the idea of reducing the tensile strain at the bottom of the HMA layer below the Fatigue Endurance Limit (FEL), a level of strain below which no cumulative damage occurs to the HMA mixture. This study investigates the effectiveness of several design strategies involved in long-life, perpetual pavement design. A 3D Finite Element model of the pavement involving a linear viscoelastic constitutive model for HMA materials and non-uniform tire contact stresses is developed using ABAQUS 6.11. The effects of asphalt base course thickness and mixture type, rich binder layer, and aggregate subbase layer are examined. Four asphalt base course mixture types, namely dense graded, polymer modified, high modulus, and standard binder, are studied as a function of the asphalt base course thickness. The results underline a better performance of the high-modulus asphalt base, as compared to the other base course mixtures. The aggregate subbase layer on top of subgrade soil showed a relatively minor effect on the longitudinal and lateral strain response at the bottom of asphalt base course. The addition of a rich binder layer at the bottom of the asphalt base course showed a significant reduction in tensile strains. Tables are provided as a guideline to assess the different alternatives in design of long-life perpetual pavements.
1110.3318v7
2013-06-21
Crystallographic, Electronic, Thermal and Magnetic Properties of Single-Crystal SrCo2As2
In tetragonal SrCo2As2 single crystals, inelastic neutron scattering measurements demonstrated that strong stripe-type antiferromagnetic (AFM) correlations occur at a temperature T = 5 K [W. Jayasekara et al., arXiv:1306.5174] that are the same as in the isostructural AFe2As2 (A = Ca, Sr, Ba) parent compounds of high-Tc superconductors. This surprising discovery suggests that SrCo2As2 may also be a good parent compound for high-Tc superconductivity. Here, structural and thermal expansion, electrical resistivity rho, angle-resolved photoemission spectroscopy (ARPES), heat capacity Cp, magnetic susceptibility chi, 75As NMR and neutron diffraction measurements of SrCo2As2 crystals are reported together with LDA band structure calculations that shed further light on this fascinating material. The c-axis thermal expansion coefficient alpha_c is negative from 7 to 300 K, whereas alpha_a is positive over this T range. The rho(T) shows metallic character. The ARPES measurements and band theory confirm the metallic character and in addition show the presence of a flat band near the Fermi energy E_F. The band calculations exhibit an extremely sharp peak in the density of states D(E_F) arising from a flat d_{x^2 - y^2} band. A comparison of the Sommerfeld coefficient of the electronic specific heat with chi(T = 0) suggests the presence of strong ferromagnetic itinerant spin correlations which on the basis of the Stoner criterion predicts that SrCo2As2 should be an itinerant ferromagnet, in conflict with the magnetization data. The chi(T) does have a large magnitude, but also exhibits a broad maximum at 115 K suggestive of dynamic short-range AFM spin correlations, in agreement with the neutron scattering data. The measurements show no evidence for any type of phase transition between 1.3 and 300 K and we propose that metallic SrCo2As2 has a gapless quantum spin-liquid ground state.
1306.5222v3
2014-02-17
Unravelling the effect of SrTiO3 antiferrodistortive phase transition on the magnetic properties of La0.7Sr0.3MnO3 thin films
Epitaxial La0.7Sr0.3MnO3 (LSMO) thin films, with different thickness ranging from 20 nm up to 330 nm, were deposited on (100)-oriented strontium titanate (STO) substrates by pulsed laser deposition, and their structure and morphology characterized at room temperature. Magnetic and electric transport properties of the as-processed thin films reveal an abnormal behavior in the temperature dependent magnetization M(T) below the antiferrodistortive STO phase transition (TSTO) and also an anomaly in the magnetoresistance and electrical resistivity close to the same temperature. Up to 100 nm LSMO thin films, an in-excess magnetization and pronounced changes in the coercivity are evidenced, achieved through the interface-mediated magnetoelastic coupling with antiferrodistortive domain wall movement occurring below TSTO. Contrarily, for thicker LSMO thin films, above 100 nm, an in-defect magnetization is observed. This reversed behavior can be understood within the emergence in the upper layer of the film, observed by high resolution transmission electron microscopy, of a branched structure needed to relax elastic energy stored in the film which leads to randomly oriented magnetic domain reconstructions. For enough high-applied magnetic fields, as thermodynamic equilibrium is reached, a fully suppression of the anomalous magnetization occurs, wherein the temperature dependence of the magnetization starts to follow the expected Brillouin behavior.
1402.4040v1
2017-12-04
Effect of crystalline anisotropy on vertical (-201) and (010) beta-Ga2O3 Schottky barrier diodes on EFG single-crystal substrates
Vertical (-201) and (010) beta-Ga2O3 Schottky barrier diodes (SBDs) were fabricated on single-crystal substrates grown by edge-defined film-fed growth (EFG) method. High resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM) confirmed good crystal quality and surface morphology of the substrates. The electrical properties of both devices, including current-voltage (I-V) and capacitance-voltage (C-V) characteristics, were comprehensively measured and compared. The (-201) and (010) SBDs exhibited on-resistances (Ron) of 0.56 and 0.77 m{\Omega}cm2, turn-on voltages (Von) of 1.0 and 1.3 V, Schottky barrier heights (SBH) of 1.05 and 1.20 eV, electron mobilities of 125 and 65 cm2/(Vs), respectively, with a high on-current of ~1.3 kA/cm2 and on/off ratio of ~109. The (010) SBD had a larger Von and SBH than (-201) SBD due to anisotropic surface properties (i.e., surface Fermi level pinning and band bending), as supported by X-ray photoelectron spectroscopy (XPS) measurements. Temperature-dependent I-V also revealed the inhomogeneous nature of the SBH in both devices, where (-201) SBD showed a more uniform SBH distribution. The homogeneous SBH was also extracted: 1.33 eV for (-201) SBD and 1.53 eV for (010) SBD. The reverse leakage current of the devices was well described by the two-step trap-assisted tunneling model and the one-dimensional variable range hopping conduction (1D-VRH) model. The (-201) SBD showed larger leakage current due to its lower SBH and smaller activation energy. These results indicate the crystalline anisotropy of beta-Ga2O3 can affect the electrical properties of vertical SBDs and should be taken into consideration when designing beta-Ga2O3 electronics.
1712.01318v1
2018-04-30
Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2
We present a detailed quantum oscillatory study on the Dirac type-II semimetallic candidates PdTe$_{2}$ and PtTe$_{2}$ \emph{via} the temperature and the angular dependence of the de Haas-van Alphen (dHvA) and Shubnikov-de Haas (SdH) effects. In high quality single crystals of both compounds, i.e. displaying carrier mobilities between $10^3$ and $10^4$ cm$^2$/Vs, we observed a large non-saturating magnetoresistivity (MR) which in PtTe$_2$ at a temperature $T = 1.3$ K, leads to an increase in the resistivity up to $5 \times 10^{4}$ % under a magnetic field $\mu_0 H = 62$ T. These high mobilities correlate with their light effective masses in the range of 0.04 to 1 bare electron mass according to our measurements. For PdTe$_{2}$ the experimentally determined Fermi surface cross-sectional areas show an excellent agreement with those resulting from band-structure calculations. Surprisingly, this is not the case for PtTe$_{2}$ whose agreement between calculations and experiments is relatively poor even when electronic correlations are included in the calculations. Therefore, our study provides a strong support for the existence of a Dirac type-II node in PdTe$_2$ and probably also for PtTe$_2$. Band structure calculations indicate that the topologically non-trivial bands of PtTe$_2$ do not cross the Fermi-level ($\varepsilon_F$). In contrast, for PdTe$_2$ the Dirac type-II cone does intersect $\varepsilon_F$, although our calculations also indicate that the associated cyclotron orbit on the Fermi surface is located in a distinct $k_z$ plane with respect to the one of the Dirac type-II node. Therefore it should yield a trivial Berry-phase.
1805.00087v1
2017-03-20
Pseudogap temperature $T^\star$ of cuprate superconductors from the Nernst effect
We use the Nernst effect to delineate the boundary of the pseudogap phase in the temperature-doping phase diagram of cuprate superconductors. New data for the Nernst coefficient $\nu(T)$ of YBa$_{2}$Cu$_{3}$O$_{y}$ (YBCO), La$_{1.8-x}$Eu$_{0.2}$Sr$_x$CuO$_4$ (Eu-LSCO) and La$_{1.6-x}$Nd$_{0.4}$Sr$_x$CuO$_4$ (Nd-LSCO) are presented and compared with previous data including La$_{2-x}$Sr$_x$CuO$_4$ (LSCO). The temperature $T_\nu$ at which $\nu/T$ deviates from its high-temperature behaviour is found to coincide with the temperature at which the resistivity deviates from its linear-$T$ dependence, which we take as the definition of the pseudogap temperature $T^\star$- in agreement with gap opening detected in ARPES data. We track $T^\star$ as a function of doping and find that it decreases linearly vs $p$ in all four materials, having the same value in the three LSCO-based cuprates, irrespective of their different crystal structures. At low $p$, $T^\star$ is higher than the onset temperature of the various orders observed in underdoped cuprates, suggesting that these orders are secondary instabilities of the pseudogap phase. A linear extrapolation of $T^\star(p)$ to $p=0$ yields $T^\star(p\to 0)\simeq T_N(0)$, the N\'eel temperature for the onset of antiferromagnetic order at $p=0$, suggesting that there is a link between pseudogap and antiferromagnetism. With increasing $p$, $T^\star(p)$ extrapolates linearly to zero at $p\simeq p_{\rm c2}$, the critical doping below which superconductivity emerges at high doping, suggesting that the conditions which favour pseudogap formation also favour pairing. We also use the Nernst effect to investigate how far superconducting fluctuations extend above $T_{\rm c}$, as a function of doping, and find that a narrow fluctuation regime tracks $T_{\rm c}$, and not $T^\star$. This confirms that the pseudogap phase is not a form of precursor superconductivity.
1703.06927v2
2022-02-06
Direct observation of vortices in an electron fluid
Vortices are the hallmarks of hydrodynamic flow. Recent studies indicate that strongly-interacting electrons in ultrapure conductors can display signatures of hydrodynamic behavior including negative nonlocal resistance, Poiseuille flow in narrow channels, and a violation of the Wiedemann-Franz law. Here we provide the first visualization of whirlpools in an electron fluid. By utilizing a nanoscale scanning superconducting quantum interference device on a tip (SQUID-on-tip) we image the current distribution in a circular chamber connected through a small aperture to an adjacent narrow current carrying strip in high-purity type-II Weyl semimetal WTe2. In this geometry, the Gurzhi momentum diffusion length and the size of the aperture determine the vortex stability phase diagram. We find that the vortices are present only for small apertures, whereas the flow is laminar (non-vortical) for larger apertures, consistent with the theoretical analysis of the hydrodynamic regime and in contrast to the expectations of ballistic transport in WTe2 at low temperatures. Moreover, near the vortical-to-laminar transition, we observe a single vortex in the chamber splitting into two vortices, a behavior that can occur only in the hydrodynamic regime and cannot be sustained by ballistic transport. These findings suggest a novel mechanism of hydrodynamic flow: instead of the commonly considered electron-electron scattering at the bulk, which becomes extremely weak at low temperatures, the spatial diffusion of charge carriers' momenta is enabled by small-angle scattering at the planar surfaces of thin pure crystals. This surface-induced para-hydrodynamics opens new avenues for exploring and utilizing electron fluidics in high-mobility electron systems.
2202.02798v1
2014-01-21
Random strain fluctuations as dominant disorder source for high-quality on-substrate graphene devices
We have performed systematic investigations of transport through graphene on hexagonal boron nitride (hBN) substrates, together with confocal Raman measurements and a targeted theoretical analysis, to identify the dominant source of disorder in this system. Low-temperature transport measurements on many devices reveal a clear correlation between the carrier mobility $\mu$ and the width $n^*$ of the resistance peak around charge neutrality, demonstrating that charge scattering and density inhomogeneities originate from the same microscopic mechanism. The study of weak-localization unambiguously shows that this mechanism is associated to a long-ranged disorder potential, and provides clear indications that random pseudo-magnetic fields due to strain are the dominant scattering source. Spatially resolved Raman spectroscopy measurements confirm the role of local strain fluctuations, since the line-width of the Raman 2D-peak --containing information of local strain fluctuations present in graphene-- correlates with the value of maximum observed mobility. The importance of strain is corroborated by a theoretical analysis of the relation between $\mu$ and $n^*$ that shows how local strain fluctuations reproduce the experimental data at a quantitative level, with $n^*$ being determined by the scalar deformation potential and $\mu$ by the random pseudo-magnetic field (consistently with the conclusion drawn from the analysis of weak-localization). Throughout our study, we compare the behavior of devices on hBN substrates to that of devices on SiO$_2$ and SrTiO$_3$, and find that all conclusions drawn for the case of hBN are compatible with the observations made on these other materials. These observations suggest that random strain fluctuations are the dominant source of disorder for high-quality graphene on many different substrates, and not only on hexagonal boron nitride.
1401.5356v2
2018-12-07
Chemical Aspects of the Antiferromagnetic Topological Insulator MnBi$_{2}$Te$_{4}$
Crystal growth of MnBi$_{2}$Te$_{4}$ has delivered the first experimental corroboration of the 3D antiferromagnetic topological insulator state. Our present results confirm that the synthesis of MnBi$_{2}$Te$_{4}$ can be scaled-up and strengthen it as a promising experimental platform for studies of a crossover between magnetic ordering and non-trivial topology. High-quality single crystals of MnBi$_{2}$Te$_{4}$ are grown by slow cooling within a narrow range between the melting points of Bi$_{2}$Te$_{3}$ (586 {\deg}C) and MnBi$_{2}$Te$_{4}$ (600 {\deg}C). Single crystal X-ray diffraction and electron microscopy reveal ubiquitous antisite defects in both cation sites and, possibly, Mn vacancies. Powders of MnBi$_{2}$Te$_{4}$ can be obtained at subsolidus temperatures, and a complementary thermochemical study establishes a limited high-temperature range of phase stability. Nevertheless, quenched powders are stable at room temperature and exhibit long-range antiferromagnetic ordering below 24 K. The expected Mn(II) out-of-plane magnetic state is confirmed by the magnetization, X-ray photoemission, X-ray absorption and linear dichroism data. MnBi$_{2}$Te$_{4}$ exhibits a metallic type of resistivity in the range 4.5-300 K. The compound is an n-type conductor that reaches a thermoelectric figure of merit up to ZT = 0.17. Angle-resolved photoemission experiments provide evidence for a surface state forming a gapped Dirac cone.
1812.03106v1
2018-12-19
Universal relaxation in a holographic metallic density wave phase
In this work, we uncover a universal relaxation mechanism of pinned density waves, combining Gauge/Gravity duality and effective field theory techniques. Upon breaking translations spontaneously, new gapless collective modes emerge, the Nambu-Goldstone bosons of broken translations. When translations are also weakly broken (eg by disorder or lattice effects), these phonons are pinned with a mass $m$ and damped at a rate $\Omega$, which we explicitly compute. This contribution to $\Omega$ is distinct from that of topological defects. We show that $\Omega\simeq G m^2\Xi$, where $G$ is the shear modulus and $\Xi$ is related to a diffusivity of the purely spontaneous state. This result follows from the smallness of the bulk and shear moduli, as would be the case in a phase with fluctuating translational order. At low temperatures, the collective modes relax quickly into the heat current, so that late time transport is dominated by the thermal diffusivity. In this regime, the resistivity in our model is linear in temperature and the ac conductivity displays a significant rearranging of the degrees of freedom, as spectral weight is shifted from an off-axis, pinning peak to a Drude-like peak. These results could shed light on transport properties in cuprate high $T_c$ superconductors, where quantum critical behavior and translational order occur over large parts of the phase diagram and transport shows qualitatively similar features.
1812.08118v3
2020-06-16
Topological Dirac states in a layered telluride TaPdTe$_5$ with quasi-one-dimensional PdTe$_2$ chains
We report the synthesis and systematic studies of a new layered ternary telluride TaPdTe5 with quasi-one-dimensional PdTe2 chains. This compound crystalizes in a layered orthorhombic structure with space group Cmcm. Analysis of its curved field-dependent Hall resistivity, using the two-band model, indicates the hole-dominated transport with a high mobility ${\mu}_h$ = 2.38 $\times$ 10$^3$ cm$^2$ V$^{-1}$ s$^{-1}$ at low temperatures. The in-plane magnetoresistance (MR) displays significant anisotropy with field applied along the crystallographic $b$ axis. The MR with the current applied along the $c$-axis is also measured in high magnetic fields up to 51.7 T. Remarkably, it follows a power-law dependence and reaches (9.5 $\times$ 10$^3$)% at 2.1 K without any signature of saturation. The De Haas-van Alphen oscillations show a small Fermi-surface pocket with a nontrivial Berry phase. The Shubnikov-de Haas (SdH) oscillations are detected at low temperatures and under magnetic fields above 28.5 T. Two effective masses $m^*$ (0.26$m_e$ and 0.41$m_e$) are extracted from the oscillatory SdH data. Our first-principles calculations unveil a topological Dirac cone in its surface states, and, in particular, the topological index indicates that TaPdTe$_5$ is a topologically nontrivial material.
2006.09070v2
2020-11-03
Pressure induced superconductivity in MnSe
The rich phenomena in the FeSe and related compounds have attracted great interests as it provides fertile material to gain further insight into the mechanism of high temperature superconductivity. A natural follow-up work was to look into the possibility of superconductivity in MnSe. It was shown that MnP becomes superconducting with Tc ~ 1 K under pressure. We demonstrated in this work that high pressure can effectively suppress the complex magnetic characters of MnSe crystal when observed at ambient condition. MnSe under pressure is found to undergo several structural transformations: the cubic phase first partially transforms to the hexagonal phase at about 12 GPa, the crystal exhibits the coexistence of cubic, hexagonal and orthorhombic phases from 16 GPa to 30 GPa, and above 30 GPa the crystal shows a single orthorhombic phase. Superconductivity with Tc ~ 5 K was first observed at pressure ~12 GPa by magnetic measurements (~16 GPa by resistive measurements). The highest Tc is ~ 9 K (magnetic result) at ~35 GPa. Our observations suggest the observed superconductivity may closely relate to the pressure-induced structural change. However, the interface between the metallic and insulating boundaries may also play an important role to the pressure induced superconductivity in MnSe.
2011.01510v1
2020-12-24
Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells
In terms of mixing graded TiO2 and SnO2 powders by solid-state reaction method, ITO was prepared. Using electron beam gun technology, ITO films with different thicknesses were prepared. The influence of film thickness on structure, electrical and optical properties was studied. The XRD patterns were utilized to determine the structural parameters (lattice strain and crystallite size) of ITO with different thicknesses. It is observed that the average crystallite size increases as the film thickness increases, but the lattice strain decreases. SEM shows that as the film thickness increases, the grain size of ITO increases and improves. The electrical properties of ITO films with different thicknesses were measured by the standard four-point probe method. It can be seen that as the thickness of the ITO film increases from 75 nm to 325 nm, the resistivity decreases from 29x10^-4 Ohm/cm to 1.65x10^-4 Ohm/cm. This means that ITO films with lower electrical properties will be more suitable for high-efficiency CdTe solar cells. Three optical layer models (adhesive layer of the substrate/B-spline layer of ITO film/surface roughness layer) are used to calculate the film thickness with high-precision ellipsometry. In the higher T(lambda) and R(lambda) absorption regions, the absorption coefficient is determined to calculate the optical energy gap, which increases from 3.56 eV to 3.69 eV. Finally, the effects of ITO layers of various thicknesses on the performance of CdS/CdTe solar cells are also studied. When the thickness of the ITO window layer is 325 nm, Voc = 0.82 V, Jsc = 17 mA/cm2, and FF = 57.4%, the highest power conversion efficiency (PCE) is 8.6%.
2012.13086v1
2021-12-26
The thickness dependence of quantum oscillations in ferromagnetic Weyl metal SrRuO$_{3}$
Quantum oscillations in resistivity and magnetization at high magnetic fields are a macroscopic fingerprint of the energy quantization due to the cyclotron motion of quasiparticles. In a thin Weyl semimetal, a unique thickness dependent Weyl-orbit quantum oscillation was proposed to exist, originating from a nonlocal cyclotron orbit via the electron tunneling between the top and bottom Fermi-arc surface states. Here, untwinned and high crystalline Weyl metal SrRuO$_3$ thin films with different thicknesses were grown on miscut SrTiO$_3$ (001) substrates. Magneto-transport measurements were carried out in magnetic fields up to 35 T, and quantum oscillations with different frequencies were observed and compared to the calculated band structure. In particular, we discovered a frequency $F \approx$ 30 T at low temperatures and above 3 T that corresponds to a small Fermi pocket with a light effective mass. Its oscillation amplitude appears to be at maximum for film thicknesses in a range of 10 to 20 nm, and the phase of the oscillation exhibits a systematic change with the film thickness. After isolating the well separated frequencies, the constructed Landau fan diagram shows an unusual concave downward curvature in the 1/$\mu_0H_n$-$n$ curve, where $n$ is the Landau level index. Based on the rigorous analysis of the thickness and field-orientation dependence of the quantum oscillations, the oscillation with $F \approx$ 30 T is attributed to be of surface origin, which is related to the Fermi-arc surface state originating from non-overlapping Weyl nodes projected on the film's surface plane. Those findings can be understood within the framework of the Weyl-orbit quantum oscillation effect with non-adiabatic corrections.
2112.13331v2
2022-08-04
Strong-Coupling Superconductivity with $T_c$ $\sim$ 10.8 K Induced by P Doping in the Topological Semimetal Mo$_5$Si$_3$
By performing P doping on the Si sites in the topological semimetal Mo$_5$Si$_3$, we discover strong-coupling superconductivity in Mo$_5$Si$_{3-x}$P$_x$ (0.5 $\le$ $x$ $\le$ 2.0). Mo$_5$Si$_3$ crystallizes in the W$_5$Si$_3$-type structure with space group of $I4/mcm$ (No. 140), and is not a superconductor itself. Upon P doping, the lattice parameter $a$ decreases while $c$ increases monotonously. Bulk superconductivity is revealed in Mo$_5$Si$_{3-x}$P$_x$ (0.5 $\le$ $x$ $\le$ 2.0) from resistivity, magnetization, and heat capacity measurements. $T_c$ in Mo$_5$Si$_{1.5}$P$_{1.5}$ reaches as high as 10.8 K, setting a new record among the W$_5$Si$_3$-type superconductors. The upper and lower critical fields for Mo$_5$Si$_{1.5}$P$_{1.5}$ are 14.56 T and 105 mT, respectively. Moreover, Mo$_5$Si$_{1.5}$P$_{1.5}$ is found to be a fully gapped superconductor with strong electron-phonon coupling. First-principles calculations suggest that the enhancement of electron-phonon coupling is possibly due to the shift of the Fermi level, which is induced by electron doping. The calculations also reveal the nontrivial band topology in Mo$_5$Si$_3$. The $T_c$ and upper critical field in Mo$_5$Si$_{3-x}$P$_x$ are fairly high among pseudobinary compounds. Both of them are higher than those in NbTi, making future applications promising. Our results suggest that the W$_5$Si$_3$-type compounds are ideal platforms to search for new superconductors. By examinations of their band topologies, more candidates for topological superconductors can be expected in this structural family.
2208.02392v1
2023-05-19
Machine Learning Moment Tensor Potential for Modelling Dislocation and Fracture in L1$_0$-TiAl and D0$_{19}$-Ti$_3$Al Alloys
Dual-phase $\gamma$-TiAl and $\alpha_2$-Ti$_{3}$Al alloys exhibit high strength and creep resistance at high temperatures. However, they suffer from low tensile ductility and fracture toughness at room temperature. Experimental studies show unusual plastic behaviour associated with ordinary and superdislocations, making it necessary to gain a detailed understanding on their core properties in individual phases and at the two-phase interfaces. Unfortunately, extended superdislocation cores are widely dissociated beyond the length scales practical for routine first-principles density-functional theory (DFT) calculations, while extant interatomic potentials are not quantitatively accurate to reveal mechanistic origins of the unusual core-related behaviour in either phases. Here, we develop a highly-accurate moment tensor potential (MTP) for the binary Ti-Al alloy system using a DFT dataset covering a broad range of intermetallic and solid solution structures. The optimized MTP is rigorously benchmarked against both previous and new DFT calculations, and unlike existing potentials, is shown to possess outstanding accuracy in nearly all tested mechanical properties, including lattice parameters, elastic constants, surface energies, and generalized stacking fault energies (GSFE) in both phases. The utility of the MTP is further demonstrated by producing dislocation core structures largely consistent with expectations from DFT-GSFE and experimental observations. The new MTP opens the path to realistic modelling and simulations of bulk lattice and defect properties relevant to the plastic deformation and fracture processes in $\gamma$-TiAl and $\alpha_2$-Ti$_{3}$Al dual-phase alloys.
2305.11825v2
2023-06-05
Imaging the Meissner effect and flux trapping in a hydride superconductor at megabar pressures using a nanoscale quantum sensor
By directly altering microscopic interactions, pressure provides a powerful tuning knob for the exploration of condensed phases and geophysical phenomena. The megabar regime represents an exciting frontier, where recent discoveries include novel high-temperature superconductors, as well as structural and valence phase transitions. However, at such high pressures, many conventional measurement techniques fail. Here, we demonstrate the ability to perform local magnetometry inside of a diamond anvil cell with sub-micron spatial resolution at megabar pressures. Our approach utilizes a shallow layer of Nitrogen-Vacancy (NV) color centers implanted directly within the anvil; crucially, we choose a crystal cut compatible with the intrinsic symmetries of the NV center to enable functionality at megabar pressures. We apply our technique to characterize a recently discovered hydride superconductor, CeH$_9$. By performing simultaneous magnetometry and electrical transport measurements, we observe the dual signatures of superconductivity: local diamagnetism characteristic of the Meissner effect and a sharp drop of the resistance to near zero. By locally mapping the Meissner effect and flux trapping, we directly image the geometry of superconducting regions, revealing significant inhomogeneities at the micron scale. Our work brings quantum sensing to the megabar frontier and enables the closed loop optimization of superhydride materials synthesis.
2306.03122v1
2023-06-24
Exploration of strongly correlated states in SmB6 through a comparison of its two-coil pick-up response to that of Bi2Se3
Earlier studies on the Kondo insulator SmB6 reveal the presence of a bulk Kondo insulating gap between 30 - 50 K, and the emergence of a conducting surface state only below 4 K. Here, we compare the two-coil mutual inductance pick-up response of SmB6 single crystal with that of a conventional topological insulator (TI), Bi2Se3 single crystal. From these studies we identify three distinct temperature regimes for SmB6, viz., (i) T >= T*(~ 66 K), (ii) (40 K~) T_g <= T < T*, and (iii) T < T_g. At T* in SmB6, we observe a peak in the temperature-dependent AC pickup signal which corresponds to the peak in the broad hump feature in the bulk DC susceptibility measurements and features in the resistivity measurements. A dip in the pickup signal at T_g in SmB6 correlates with the evidence for the opening of a bulk Kondo gap in transport measurements. Our study of the pickup signal in SmB6 suggests the presence of a thin (submicron order thickness) high conducting surface layer from a temperature just below T_g. In this T regime in SmB6, the pickup signal shows a distinct square root frequency (f) dependence compared to the linear f dependence found in Bi2Se3. Across all the different T regimes, distinct AC frequency dependence and scaling properties are observed. Our results suggest that above T*, weak exchange interactions cause electrons to scatter from random ion sites. Electronic correlations gradually strengthen with the onset of Kondo like hybridization, setting in from below T*, and at T_g, a strongly correlated Kondo gap opens up in the bulk of the material. The appearance of the thin high conducting surface layer is nearly coincident with the onset of bulk Kondo insulating state below T_g in SmB6.
2306.13901v1
2024-01-07
Tantalum airbridges for scalable superconducting quantum processors
The unique property of tantalum (Ta), particularly its long coherent lifetime in superconducting qubits and its exceptional resistance to both acid and alkali, makes it promising for superconducting quantum processors. It is a notable advantage to achieve high-performance quantum processors with neat and unified fabrication of all circuit elements, including coplanar waveguides (CPW), qubits, and airbridges, on the tantalum film-based platform. Here, we propose a reliable tantalum airbridges with separate or fully-capped structure fabricated via a novel lift-off method, where a barrier layer with aluminium (Al) film is first introduced to separate two layers of photoresist and then etched away before the deposition of tantalum film, followed by cleaning with piranha solution to remove the residual photoresist on the chip. We characterize such tantalum airbridges as the control line jumpers, the ground plane crossovers and even coupling elements. They exhibit excellent connectivity, minimal capacitive loss, effectively suppress microwave and flux crosstalk and offer high freedom of coupling. Besides, by presenting a surface-13 tunable coupling superconducting quantum processor with median $T_1$ reaching above 100 $\mu$s, the overall adaptability of tantalum airbridges is verified. The median single-qubit gate fidelity shows a tiny decrease from about 99.95% for the isolated Randomized Benchmarking to 99.94% for the simultaneous one. This fabrication method, compatible with all known superconducting materials, requires mild conditions of film deposition compared with the commonly used etching and grayscale lithography. Meanwhile, the experimental achievement of non-local coupling with controlled-Z (CZ) gate fidelity exceeding 99.2% may further facilitate qLDPC codes, laying a foundation for scalable quantum computation and quantum error correction with entirely tantalum elements.
2401.03537v1
2024-04-16
A Young Super Star Cluster Powering a Nebula of Retained Massive Star Ejecta
We suggest that "Godzilla", an intriguing source in the lensed Sunburst galaxy at $z=2.37$, is a young super star cluster powering a compact nebula within gravitationally trapped stellar ejecta. Employing HST photometry and spectroscopy from MUSE and X-Shooter at VLT, we infer physical and chemical properties of the cluster and nebula, finding Godzilla is young (4-6 Myr), massive ($\sim 10^{6-7}M_\odot$), a stellar metallicity $Z \simeq 0.25Z_\odot$, and has the FUV component more compact than a few pc. The nebula gas is significantly enriched with N and He, indicating stellar wind material, and has highly elevated O relative to the sub-solar stellar metallicity, which indicates entrainment of CCSNe ejecta. The high gas density $n_{\rm e} \simeq 10^{7-8}{\rm cm}^{-3}$ implies a highly pressurized intracluster environment. We propose the high pressure is due to CCSN-driven supersonic turbulence in warm, self-shielding gas, which has accumulated in the cluster center after runaway radiative cooling and is dense enough to resist removal by CCSNe. The nebula gas shows sub-solar C/O, Ne/O and Si/O values, which may reflect the CCSN element yields for initial stellar masses $>40M_\odot$. A comparison to element yield synthesis models for young star clusters shows that the gas abundance pattern is consistent with complete retention and mixture of stellar winds and CCSNe ejecta until the inferred cluster age. The O and He enhancement we find may have implications for the formation of multiple stellar populations in globular clusters, as Godzilla likely has already formed second-generation stars prior to the onset of CCSNe and evolved star winds, in order not to contradict the non-observation of O and large He enhancement in second-generation stars.
2404.10755v2
2023-02-09
Scattering-dependent transport of SrRuO3 films: From Weyl fermion transport to hump-like Hall effect anomaly
Recent observation of quantum transport phenomena of Weyl fermions has brought much attention to 4d ferromagnetic perovskite SrRuO3 as a magnetic Weyl semimetal. Besides, the hump-like Hall effect anomaly, which might have a topological origin, has also been reported for this material. Here, we show that the emergence of such phenomena is governed by the degree of scattering determined by the defect density (Ru-deficiency- and/or interface-driven-defect scattering) and measurement temperature (phonon scattering), where the former is controlled by varying the growth conditions of the SrRuO3 films in molecular beam epitaxy as well as the film thickness. The resulting electronic transport properties can be classified into three categories: clean, intermediate, and dirty regimes. The transport of Weyl fermions emerges in the clean regime, whereas that of topologically trivial conduction electrons in the ferromagnetic metal state prevail in the intermediate and dirty regimes. In the clean and intermediate regimes, anomalous Hall resistivity obeys a scaling law incorporating the intrinsic Karplus-Luttinger (Berry phase) and extrinsic side-jump mechanisms. The hump-like Hall effect anomaly is observed only in the dirty regime, which is contrary to the scaling law between anomalous Hall resistivity and longitudinal resistivity. Hence, we conclude that this anomaly is not inherent to the material and does not have a topological origin. We also provide defect- and temperature-dependent transport phase diagrams of stoichiometric SrRuO3 and Ru-deficient SrRu0.7O3 where the appearance of Weyl fermions and hump-like Hall effect anomaly are mapped. These diagrams may serve as a guideline for designing SrRu1-xO3-based spintronic and topological electronic devices.
2302.04568v1
2024-02-29
Magnetism, heat capacity and electronic structure of EuCd$_2$P$_2$ in view of its colossal magnetoresistance
The mechanism of the peculiar transport properties around the magnetic ordering temperature of semiconducting antiferromagnetic EuCd$_2$P$_2$ is not yet understood. With a huge peak in the resistivity observed above the N\'eel temperature, $T_{\rm N}=10.6\,\rm K$, it exhibits a colossal magnetoresistance effect. Recent reports on observations of ferromagnetic contributions above $T_{\rm N}$ as well as metallic behavior below this temperature have motivated us to perform a comprehensive characterization of this material, including its resistivity, heat capacity, magnetic properties and electronic structure. Our transport measurements revealed quite different temperature dependence of resistivity with the maximum at $14\,\rm K$ instead of previously reported $18\,\rm K$. Low-field susceptibility data support the presence of static ferromagnetism above $T_{\rm N}$ and show a complex behavior of the material at small applied magnetic fields. Namely, signatures of reorientation of magnetic domains are observed up to $T=16\,\rm K$. Our magnetization measurements indicate a magnetocrystalline anisotropy which also leads to a preferred alignment of the magnetic clusters above $T_{\rm N}$. The momentum-resolved photoemission experiments at temperatures from $24\,\rm K$ down to $2.5\,\rm K$ indicate the permanent presence of a fundamental band gap without change of the electronic structure when going through $T_N$ that is in contradiction with previous results. We performed \textit{ab initio} band structure calculations which are in good agreement with the measured photoemission data when assuming an antiferromagnetic ground state. Calculations for the ferromagnetic phase show a much smaller bandgap, indicating the importance of possible ferromagnetic contributions for the explanation of the colossal magnetoresistance effect in the related EuZn$_2$P$_2$.
2402.18911v1
2023-01-14
Discovery of 2D materials using Transformer Network based Generative Design
Two-dimensional (2D) materials have wide applications in superconductors, quantum, and topological materials. However, their rational design is not well established, and currently less than 6,000 experimentally synthesized 2D materials have been reported. Recently, deep learning, data-mining, and density functional theory (DFT)-based high-throughput calculations are widely performed to discover potential new materials for diverse applications. Here we propose a generative material design pipeline, namely material transformer generator(MTG), for large-scale discovery of hypothetical 2D materials. We train two 2D materials composition generators using self-learning neural language models based on Transformers with and without transfer learning. The models are then used to generate a large number of candidate 2D compositions, which are fed to known 2D materials templates for crystal structure prediction. Next, we performed DFT computations to study their thermodynamic stability based on energy-above-hull and formation energy. We report four new DFT-verified stable 2D materials with zero e-above-hull energies, including NiCl$_4$, IrSBr, CuBr$_3$, and CoBrCl. Our work thus demonstrates the potential of our MTG generative materials design pipeline in the discovery of novel 2D materials and other functional materials.
2301.05824v1
2014-05-15
Effect of high pressure annealing on the normal state transport of LaO0.5F0.5BiS2
We study normal state electrical, thermoelectrical and thermal transport in polycrystalline BiS2-based compounds, which become superconducting by F doping on the O site. In particular we explore undoped LaOBiS2 and doped LaO0.5F0.5BiS2 samples, prepared either with or without high pressure annealing, in order to evidence the roles of doping and preparation conditions. The high pressure annealed sample exhibits room temperature values of resistivity ro around 5 mohmcm, Seebeck coefficient S around -20 microV/K and thermal conductivity k around 1.5 W/Km, while the Hall resistance RH is negative at all temperatures and its value is -10-8 m3/C at low temperature. The sample prepared at ambient pressure exhibits RH positive in sign and five times larger in magnitude, and S negative in sign and slightly smaller in magnitude. These results reveal a complex multiband evolution brought about by high pressure annealing. In particular, the sign inversion and magnitude suppression of RH, indicating increased electron-type carrier density in the high pressure sample, may be closely related to previous findings about change in lattice parameters and enhancement of superconducting Tc by high pressure annealing. As for the undoped sample, it exhibits the 10 times larger resistivity, 10 times larger |S| and 10 times larger |RH| than its doped counterpart, consistently with its insulating nature. Our results point out the dramatic effect of preparation conditions in affecting charge carrier density as well as structural, band and electronic parameters in these systems.
1405.3832v2
2021-09-05
On the design of particle filters inspired by animal noses
Passive filtering is a common strategy used to reduce airborne disease transmission and particulate contaminants in buildings and individual covers. The engineering of high-performance filters with relatively low flow resistance but high virus- or particle-blocking efficiency is a nontrivial problem of paramount relevance, as evidenced in the variety of industrial filtration systems and the worldwide use of face masks. In this case, standard N95-level covers have high virus-blocking efficiency, but they can cause breathing discomfort. Next-generation industrial filters and masks should retain sufficiently small droplets and aerosols while having low resistance. We introduce a novel 3D printable particle filter inspired by animals' complex nasal anatomy. Unlike standard random-media-based filters, the proposed concept relies on equally spaced channels with tortuous airflow paths. These two strategies induce distinct effects: a reduced resistance and a high likelihood of particle trapping by altering their trajectories with tortuous paths and induced local flow instability. The structures are tested for pressure drop and particle filtering efficiency over a wide range of airflow rates. We have also cross-validated the observed efficiency through numerical simulations. The designed filters exhibit a lower pressure drop than the commercial mask and air filters (N95, surgical, and high-efficiency particulate air (HEPA)). The concept provides a new approach to developing scalable, flexible, high-efficiency air filters for various engineering applications.
2109.08018v1
1997-09-27
Low-temperature electrical transport and double exchange in La(Pb,Ca)MnO
The resistivity in the ferromagnetic state of flux-grown La_{2/3}(Pb,Ca)_{1/3}MnO_3 single crystals, measured in magnetic fields up to 7 T, reveals a strong quadratic temperature dependence at and above 50 K. At lower temperatures, this contribution drops precipitously leaving the resistivity essentially temperature independent below 20 K. The Seebeck coefficient also reflects a change of regime at the same temperature. We attribute this behavior to a cut-off of single magnon scattering processes at long wavelengths due to the polarized bands of a double-exchange ferromagnet.
9709305v3
1998-01-07
Theory of the Resistive Transition in Overdoped $Tl_2Ba_2CuO_{6+x}$: Implications for the angular dependence of the quasiparticle scattering rate in High-$T_c$ superconductors
We show that recent measurements of the magnetic field dependence of the magnetization, specific heat and resistivity of overdoped $T_c \sim 17K$ $Tl_{2}Ba_{2}CuO_{6+\delta}$ in the vicinity of the superconducting $H_{c2}$ imply that the vortex viscosity is anomalously small and that the material studied is inhomogeneous with small, a few hundred $\AA$, regions in which the local $T_{c}$ is much higher than the bulk $T_{c}$. The anomalously small vortex viscosity can be derived from a microscopic model in which the quasiparticle lifetime varies dramatically around the Fermi surface, being small everywhere except along the zone diagonal (``cold spot''). We propose experimental tests of our results.
9801059v1
1998-08-25
P-wave Pairing and Colossal Magnetoresistance in Manganese Oxides
We point out that the existing experimental data of most manganese oxides show the {\sl frustrated} p-wave superconducting condensation in the ferromagnetic phase in the sense that the superconducting coherence is not long enough to cover the whole system. The superconducting state is similar to the $A_{1}$ state in superfluid He-3. The sharp drop of resistivity, the steep jump of specific heat, and the gap opening in tunneling are well understood in terms of the p-wave pairing. In addition, colossal magnetoresistance (CMR) is naturally explained by the superconducting fluctuations with increasing magnetic fields. The finite resistivity may be due to some magnetic inhomogeneities. This study leads to the possibility of room temperature superconductivity.
9808275v1
1998-10-30
Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature
The Hall resistivity rho_{xy} of a La_{2/3}(Ca,Pb)_{1/3}MnO_3 single crystal has been measured as a function of temperature and field. The overall behavior is similar to that observed previously in thin-films. At 5 K, rho_{xy} is positive and linear in field, indicating that the anomalous contribution $R_S$ is negligible. However, the effective carrier density in a free electron model is n_{eff}=2.4 holes/Mn, even larger than the 0.85-1.9 holes/Mn reported for thin-films and far larger than the 0.33 holes/Mn expected from the doping level. As temperature increases, a strong, negative contribution to rho_{xy} appears, that we ascribe to R_S. Using detailed magnetization data, we separate the ordinary (\propto B) and anomalous (\propto M) contributions. Below T_C, R_S \propto rho_{xx}, indicating that magnetic skew scattering is the dominant mechanism in the metallic ferromagnetic regime. At and above the resistivity-peak temperature, we find that rho_{xy}/rho_{xx}M is a constant, independent of temperature and field. This implies that the anomalous Hall coefficient is proportional to the magnetoresistance. A different explanation based on two fluid model is also presented.
9810410v1
1998-11-28
Negative Differential Resistance in the Scanning Tunneling Spectroscopy of Organic molecules
The conductance-voltage spectrum of molecular nanostructures measured by scanning tunneling spectroscopy (STS) is generally assumed to reflect the local density of states of the molecule. This excludes the possibility of observing negative differential resistance (NDR). We report here the observation of NDR in the scanning tunneling microscope (STM) current-voltage (I-V) characteristics of self-assembled monolayer (SAM) of 4-p-Terphenylthiol molecules on gold substrate measured using a platinum probe. We argue that the NDR arises from narrow structures in the local density of states at the tip apex atom and show that depending on the electrostatic potential profile across the system, NDR could be observed in one or both bias directions.
9811402v1
1998-12-27
Field Induced Transition from Metal to Insulator in the CMR Manganites
The gigantic reduction of the electric resistivity under the applied magnetic field, CMR effect, is now widely accepted to appear in the vicinity of the insulator to metal transition of the perovskite manganites. Recently, we have discovered the first order transition from ferromagnetic metal to insulator in $\rm La_{0.88}Sr_{0.12}MnO_3$ of the CMR manganite. This phase transition induces the tremendous increase of the resistivity under the external magnetic field just near above the phase transition temperature. We report here fairly detailed results from the systematic experiments including neutron and synchrotron X-ray scattering studies.
9812404v1
1999-01-25
Influence of Cu on spin-polaron tunneling in the ferromagnetic state of La(2/3)Ca(1/3)Mn(1-x)Cu(x)O(3) from the resistivity data
Nearly a 50% decrease of resistivity \rho (T,x) due to just 4% Cu doping on the Mn site of La(2/3)Ca(1/3)Mn(1-x)Cu(x)O(3) is observed. Attributing the observed phenomenon to the substitution induced decrease of the spin polaron energy E_s(x) below the Curie point T_C(x)=T_C(0)(1-x), all data are found to be well fitted by the nonthermal coherent tunneling expression \rho (T,x) = \rho_0*exp(-\gamma M^2(T,x)) assuming M(T,x)=M_R(x)+M_0(x)*tanh{\sqrt{[T_C(x)/T]^2-1}} for the magnetization in the ferromagnetic state. The best fits through all the data points yield M_0(x)= \sqrt(1-x)M_0(0), M_R(x)=\sqrt(x)M_0(0), and E_s(x)=E_s(0)(1-x)^4 for the Cu induced modifications of the Mn spins dominated zero-temperature spontaneous magnetization, the residual paramagnetic contribution, and spin-polaron energy, respectively, with E_s(0)=0.12 eV.
9901263v1
1999-03-03
c-axis Tunneling in Nb/Au/YBaCuO Structures
We present the experimental results for Nb/Au/YBaCuO structures, in which the current flows along (001) direction of YBaCuO film. The theoretical evaluations show, that at the experimental values of the Au/YBaCuO interface transparency, determined from the interface resistance D~10^-6, the critical current of the structure is of the fluctuation order of magnitude due to the sharp decrease of the amplitude potential of the superconducting carriers on this interface. Obtained I-V-curves could be interpreted in terms of contact between d-type pairing superconductor or gapless isotropic superconductor with normal metal. No critical current was observed for investigated structures with characteristic interface resistance RnS~10^-6 Ohm cm^2, 2 orders of magnitude lower, than for known experimental data. PACS: 74.50.+r, 74.72.Bk
9903065v1