publicationDate stringlengths 10 10 | title stringlengths 17 233 | abstract stringlengths 20 3.22k | id stringlengths 9 12 |
|---|---|---|---|
2009-02-10 | Spontaneous and low-field magnetoimpedance in La0.7Sr0.3CoO3 and La1-xSrxMnO3 (x = 0.18-0.5) | We report ac electrical transport in La0.7Sr0.3CoO3 and La1-xSrxMnO3 (x =
0.18- 0.5) as a function of temperature and frequency in H = 0 and 60 mT. Both
resistive (R) and reactive (X) components of impedance (Z = R+jX) were
measured. It is shown that a smooth decrease of the resistance around the Curie
temperautre in L... | 0902.1780v1 |
2009-04-24 | Evolution of orbital phases with particle size in nanoscale stoichiometric LaMnO3 | The thermodynamically stable long-range orbital order in bulk LaMnO3 becomes
metastable at nanoscale around a critical particle size d_C~20 nm. The orbital
order-disorder transition switches from reversible to irreversible at d_C while
the resistance in the orbital ordered state decays by 2-4% over a time scale of
~300... | 0904.3878v3 |
2009-06-04 | Sensitivity of Ag/Al Interface Specific Resistances to Interfacial Intermixing | We have measured an Ag/Al interface specific resistance, 2AR(Ag/Al)(111) =
1.4 fOhm-m^2, that is twice that predicted for a perfect interface, 50% larger
than for a 2 ML 50%-50% alloy, and even larger than our newly predicted 1.3
fOhmm^2 for a 4 ML 50%-50% alloy. Such a large value of 2ARAg/Al(111) confirms
a predicted... | 0906.0934v1 |
2009-06-04 | Perpendicular-current Studies of Electron Transport Across Metal/Metal Interfaces | We review what we have learned about the scattering of electrons by the
interfaces between two different metals (M1/M2) in the
current-perpendicular-to-plane (CPP) geometry. In this geometry, the intrinsic
quantity is the specific resistance, AR, the product of the area through which
the CPP current flows times the CPP... | 0906.0936v1 |
2009-06-26 | Upper bound for the conductivity of nanotube networks | Films composed of nanotube networks have their conductivities regulated by
the junction resistances formed between tubes. Conductivity values are enhanced
by lower junction resistances but should reach a maximum that is limited by the
network morphology. By considering ideal ballistic-like contacts between
nanotubes we... | 0906.4906v2 |
2009-06-29 | Upper critical fields of the 11-system iron-chalcogenide superconductor FeSe$_{0.25}$Te$_{0.75}$ | We have performed electrical resistivity measurements of a polycrystalline
sample of FeSe$_{0.25}$Te$_{0.75}$, which exhibits superconductivity at $T_{\rm
c} \sim 14$ K, in magnetic fields up to 55 T to determine the upper critical
field $\mu_{0}H_{\rm c2}$. In this compound, very large slopes of
$\mu_{0}H_{\rm c2}$ at... | 0906.5248v1 |
2009-07-17 | Phase diagram of CeFeAs$_{1-x}$P$_{x}$O obtained from electric resistivity, magnetization, and specific heat measurements | We performed a systematic study on the properties of CeFeAs$_{1-x}$P$_{x}$O
($0\leq x\leq 1$) by electrical resistivity, magnetization and specific heat
measurements. The c-axis lattice constant decreases significantly with
increasing P content, suggesting a remarkable chemical pressure. The Fe-3d
electrons show the en... | 0907.2961v2 |
2009-07-31 | Top and side gated epitaxial graphene field effect transistors | Three types of first generation epitaxial graphene field effect transistors
(FET) are presented and their relative merits are discussed. Graphene is
epitaxially grown on both the carbon and silicon faces of hexagonal silicon
carbide and patterned with electron beam lithography. The channels have a Hall
bar geometry to ... | 0908.0017v1 |
2009-08-02 | Spin-dependent transport in nanocomposite C:Co films | The magneto-transport properties of nanocomposite C:Co (15 and 40 at.% Co)
thin films are investigated. The films were grown by ion beam co-sputtering on
thermally oxidized silicon substrates in the temperature range from 200 to 500
degC. Two major effects are reported: (i) a large anomalous Hall effect
amounting to 2 ... | 0908.0127v1 |
2009-09-16 | Superconductivity at 39 K in New Iron Pnictide Oxide (Fe2As2)(Sr4(Mg,Ti)2O6) | We have discovered a new iron pnictide oxide superconductor
(Fe2As2)(Sr4(Mg,Ti)2O6). This material is isostructual with (Fe2As2)(Sr4M2O6)
(M = Sc, Cr), which was found in our previous study. The structure of this
compound is tetragonal with a space group of P4/nmm and consists of the
anti-fluorite type FeAs and perovsk... | 0909.2945v3 |
2009-09-25 | Electrical, magnetic, magnetodielectric and magnetoabsorption studies in multiferroic GaFeO3 | We report electrical, magnetic, magnetodielectric and magnetoabsorption
properties of a polycrystalline GaFeO3. The resistivity measurement shows that
the sample is highly insulating below 200 K and the resistivity above 200 K
obey the Arrhenius law with an activation energy of Ea = 0.67 eV. An anomaly
occurs in the te... | 0909.4609v1 |
2009-10-11 | Anomalous Hall resistance in Ge:Mn systems with low Mn concentrations | Taking Mn doped Germanium as an example, we evoke the consideration of a
two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main
argument for claiming Ge:Mn as a FMS is the occurrence of the anomalous Hall
effect (AHE). Usually, the reported AHE (1) is observable at temperatures above
10 K, (2) ... | 0910.1981v1 |
2009-10-20 | Sharp fall of electrical resistance for a small application of magnetic field on a metastable form of a compound, Tb5Si3, under pressure | We report an unusual sensitivity of electrical resistivity (rho) to an
application of a small magnetic field in an intermetallic compound, Tb5Si3,
under pressure. In this compound, there is a magnetic field-induced first-order
magnetic transition at 1.8 K. Under pressure, there is a metastable magnetic
phase after redu... | 0910.3794v1 |
2009-11-11 | Neutron powder diffraction investigation of the structural and magnetic properties of (La1-yYy)FeAsO | The structural, magnetic and resistive properties of (La1-yYy)FeAsO compounds
(y = 0.10, 0.20, 0.30) have been investigated by means of X-ray and neutron
powder diffraction as well as by resistivity measurements. The temperatures at
which the structural transition from tetragonal to orthorhombic and the
magnetic orderi... | 0911.2153v1 |
2009-11-23 | Magnetic field and contact resistance dependence of non-local charge imbalance | Crossed Andreev reflection (CAR) in metallic nanostructures, a possible basis
for solid-state electron entangler devices, is usually investigated by
detecting non-local voltages in multi-terminal superconductor/normal metal
devices. This task is difficult because other subgap processes may mask the
effects of CAR. One ... | 0911.4427v1 |
2009-12-16 | Cooling dynamics and thermal interface resistance of glass-embedded metal nanoparticles | The cooling dynamics of glass-embedded noble metal nanoparticles with
diameters ranging from 4 to 26 nm were studied using ultrafast pump-probe
spectroscopy. Measurements were performed probing away from the surface plasmon
resonance of the nanoparticles to avoid spurious effects due to glass heating
around the particl... | 0912.3058v1 |
2009-12-29 | Interplay of bulk and interface effects in the electric-field driven transition in magnetite | Contact effects in devices incorporating strongly-correlated electronic
materials are comparatively unexplored. We have investigated the
electrically-driven phase transition in magnetite (100) thin films by
four-terminal methods. In the lateral configuration, the channel length is less
than 2 $\mu$m, and voltage-probe ... | 0912.5374v1 |
2010-01-08 | Low-magnetic-field control of dielectric constant at room temperature realized in Ba0.5Sr1.5Zn2Fe12O22 | We show that room temperature resistivity of Ba0.5Sr1.5Zn2Fe12O22 single
crystals increases by more than three orders of magnitude upon being subjected
to optimized heat treatments. The increase in the resistivity allows the
determination of magnetic field (H)-induced ferroelectric phase boundaries up
to 310 K through ... | 1001.1319v1 |
2010-03-05 | Weak superconducting fluctuations and small anisotropy of the upper critical fields in an Fe1.05Te0.85Se0.15 single crystal | We have investigated the temperature dependence of the resistive upper
critical fields ($\mu_{0}H_{\rm c2}(T)$) for an
Fe$_{1.05}$Te$_{0.85}$Se$_{0.15}$ single crystal, which exhibit
superconductivity at $T_{\rm c} \sim 14 K, in magnetic fields of up to 55 T.
Two-dimensional feature and superconducting fluctuations of ... | 1003.1171v3 |
2010-03-19 | Lateral Spin Injection in Germanium Nanowires | Electrical injection of spin-polarized electrons into a semiconductor, large
spin diffusion length, and an integration friendly platform are desirable
ingredients for spin-based devices. Here we demonstrate lateral spin injection
and detection in germanium nanowires, by using ferromagnetic metal contacts and
tunnel bar... | 1003.3787v2 |
2010-03-28 | Scanning Gate Microscopy on Graphene: Charge Inhomogeneity and Extrinsic Doping | We have performed scanning gate microscopy (SGM) on graphene field effect
transistors (GFET), using a biased metallic nanowire coated with a dielectric
layer as a contact mode tip and local top gate. Electrical transport through
graphene at various back gate voltages is monitored as a function of tip
voltage and tip po... | 1003.5404v1 |
2010-04-07 | Temperature dependence of the nonlocal voltage in an Fe/GaAs electrical spin injection device | The nonlocal spin resistance is measured as a function of temperature in a
Fe/GaAs spin-injection device. For nonannealed samples that show minority-spin
injection, the spin resistance is observed up to room temperature and decays
exponentially with temperature at a rate of 0.018\,K$^{-1}$. Post-growth
annealing at 440... | 1004.1034v1 |
2010-05-01 | Reversible Fluorination of Graphene: towards a Two-Dimensional Wide Bandgap Semiconductor | We report the synthesis and evidence of graphene fluoride, a two-dimensional
wide bandgap semiconductor derived from graphene. Graphene fluoride exhibits
hexagonal crystalline order and strongly insulating behavior with resistance
exceeding 10 G$\Omega$ at room temperature. Electron transport in graphene
fluoride is we... | 1005.0113v1 |
2010-07-15 | Quantum Hall Resistance Overshoot in 2-Dimensional Electron Gases - Theory and Experiment | We present a systematical experimental investigation of an unusual transport
phenomenon observed in two dimensional electron gases in Si/SiGe
heterostructures under integer quantum Hall effect (IQHE) conditions. This
phenomenon emerges under specific experimental conditions and in different
material systems. It is comm... | 1007.2586v1 |
2010-08-10 | Transition from a ferromagnetic insulating to a ferromagnetic metallic state in nanoparticles of Nd0.8Sr0.2MnO3 : Study of the electronic - and magneto - transport properties | A detailed investigation of the electronic - and magneto - transport
properties of Nd0.8Sr0.2MnO3 with the variation of grain size (down to 42 nm)
is presented here. Interestingly, we observe that the ferromagnetic insulating
state is suppressed and a metallic state is stabilized as the grain size of the
sample is redu... | 1008.1693v1 |
2010-08-18 | A New Strained-Silicon Channel Trench-gate Power MOSFET: Design and Analysis | In this paper, we propose a new trench power MOSFET with strained Si channel
that provides lower on resistance than the conventional trench MOSFET. Using a
20% Ge mole fraction in the Si1-xGex body with a compositionally graded
Si1-xGex buffer in the drift region enables us to create strain in the channel
along with gr... | 1008.3019v1 |
2010-08-24 | Dominant role of impurity scattering over crystalline anisotropy for magnetotransport properties in the quasi-1D Hollandite Ba1.2Rh8O16 | Angular magnetotransport measurements have been performed to tackle the
origin of the magnetoresistance in the quasi-1D Hollandite Ba1.2Rh8O16. Three
samples of different impurities amount were measured. We observe that the low
temperature resistivity upturn is not due to a charge density wave transition,
and a dominan... | 1008.4040v1 |
2010-09-27 | Effect of vertex corrections on the longitudinal transport through multilayered nanostructures: Exact dynamical mean-field theory approach applied to the inhomogeneous Falicov-Kimball model | Inhomogeneous dynamical mean-field theory is employed to calculate the
vertex-corrected electronic charge transport for multilayered devices composed
of semi-infinite metallic lead layers coupled through a strongly correlated
material barrier region. The barrier region can be tuned from a metal to a Mott
insulator thro... | 1009.5299v1 |
2010-10-08 | A unified first-principles study of Gilbert damping, spin-flip diffusion and resistivity in transition metal alloys | Using a formulation of first-principles scattering theory that includes
disorder and spin-orbit coupling on an equal footing, we calculate the
resistivity $\rho$, spin flip diffusion length $l_{sf}$ and the Gilbert damping
parameter $\alpha$ for Ni$_{1-x}$Fe$_x$ substitutional alloys as a function of
$x$. For the techn... | 1010.1626v3 |
2010-10-23 | Silicon Oxide is a Non-Innocent Surface for Molecular Electronics and Nanoelectronics Studies | Silicon oxide (SiOx) has been widely used in many electronic systems as a
supportive and insulating medium. Here we demonstrate various electrical
phenomena such as negative differential resistance, resistive switching and
current hysteresis intrinsic to a thin layer of SiOx. These behaviors can
largely mimic numerous ... | 1010.4853v1 |
2010-11-17 | Oxidation resistance of graphene-coated Cu and Cu/Ni alloy | The ability to protect refined metals from reactive environments is vital to
many industrial and academic applications. Current solutions, however,
typically introduce several negative effects, including increased thickness and
changes in the metal physical properties. In this paper, we demonstrate for the
first time t... | 1011.3875v1 |
2010-12-20 | Conduction Electron Scattering and Spin-Flipping at Sputtered Co/Ni Interfaces | Current-perpendicular-to-plane magnetoresistance (CPP-MR) measurements let us
quantify conduction electron scattering and spin-flipping at a sputtered
ferromagnetic/ferromagnetic (F1/F2 = Co/Ni) interface, with important
consequences for CPP-MR and spin-torque experiments with perpendicular
anisotropy. We use ferromagn... | 1012.4388v1 |
2011-01-19 | Negative differential resistance in scanning tunneling microscopy: simulations on C$_{60}$-based molecular overlayers | We determine the conditions in which negative differential resistance (NDR)
appears in the C$_{60}$-based molecular device of [Phys. Rev. Lett. {\bf 100},
036807 (2008)] by means of ab-initio electron-transport simulations. Our
calculations grant access to bias-dependent intrinsic properties of the
molecular device, su... | 1101.3714v1 |
2011-01-26 | Metal-insulator transition in ultrathin LaNiO3 films | Transport in ultrathin films of LaNiO3 evolves from a metallic to a strongly
localized character as the film's thickness is reduced and the sheet resistance
reaches a value close to h/e2, the quantum of resistance in two dimensions. In
the intermediate regime, quantum corrections to the Drude low- temperature
conductiv... | 1101.5111v2 |
2011-03-31 | Aharonov-Casher effect in Bi$_{\rm 2}$Se$_{\rm 3}$ square-ring interferometers | Electrical control of spin dynamics in Bi$_{\rm 2}$Se$_{\rm 3}$ was
investigated in ring-type interferometers. Aharonov-Bohm and
Altshuler-Aronov-Spivak resistance oscillations against magnetic field, and
Aharorov-Casher resistance oscillations against gate voltage were observed in
the presence of a Berry phase of $\pi... | 1103.6115v1 |
2011-06-02 | Evidence for semiconducting behavior with a narrow band gap of Bernal graphite | We have studied the resistivity of a large number of highly oriented graphite
samples with areas ranging from several mm$^2$ to a few $\mu$m$^2$ and
thickness from $\sim 10 $nm to several tens of micrometers. The measured
resistance can be explained by the parallel contribution of semiconducting
graphene layers with lo... | 1106.0437v3 |
2011-07-25 | Unveiling a nematic quantum critical point in multi-orbital systems | Electronic nematicity, proposed to exist in a number of transition metal
materials, can have different microscopic origins. In particular, the
anisotropic resistivity and meta-magnetic jumps observed in Sr3Ru2O7 are
consistent with an earlier proposal that the isotropic-nematic transition is
generically first order and... | 1107.5052v5 |
2011-08-25 | Structural and Electrical Characterization of Bi2Se3 Nanostructures Grown by Metalorganic Chemical Vapor Deposition | We characterize nanostructures of Bi2Se3 that are grown via metalorganic
chemical vapor deposition using the precursors diethyl selenium and trimethyl
bismuth. By adjusting growth parameters, we obtain either single-crystalline
ribbons up to 10 microns long or thin micron-sized platelets. Four-terminal
resistance measu... | 1108.4978v2 |
2011-09-14 | Growth of atomically smooth thin films of the electronically phase separated manganite (La$_{0.5}$Pr$_{0.5}$)$_{0.67}$Ca$_{0.33}$MnO$_{3}$ | Atomically flat, epitaxial, and stoichiometric thin films of the
electronically phase separated compound
(La$_{0.5}$Pr$_{0.5}$)$_{0.67}$Ca$_{0.33}$MnO$_{3}$ were grown on as-received
and treated NdGaO$_{3}$ substrates by fine tuning of oxygen pressure during
deposition. Optimal thin films with step flow growth mode sho... | 1109.3225v1 |
2011-09-23 | A single layer hydrogen silsesquioxane (HSQ) based lift-off process for germanium and platinum | Primarily used as etch mask, single layer hydrogen silsesquioxane has never
been investigated for lift-off technique. In this article, we propose a new
technique where a single layer of hydrogen silsesquioxane, a negative tone
electron beam resist, is used to make lift-off of germanium and platinum.
Removal of exposed ... | 1109.5187v1 |
2011-11-03 | Estimation of the spin polarization for Heusler-compound thin films by means of nonlocal spin-valve measurements: Comparison of Co$_{2}$FeSi and Fe$_{3}$Si | We study room-temperature generation and detection of pure spin currents
using lateral spin-valve devices with Heusler-compound electrodes, Co$_{2}$FeSi
(CFS) or Fe$_{3}$Si (FS). The magnitude of the nonlocal spin-valve (NLSV)
signals is seriously affected by the dispersion of the resistivity peculiarly
observed in the... | 1111.0742v2 |
2011-11-27 | A first-order magnetic phase transition near 15 K with novel magnetic-field-induced effects in Er5Si3 | We present magnetic characterization of a binary rare-earth intermetallic
compound Er5Si3, crystallizing in Mn5Si3-type hexagonal structure, through
magnetization, heat-capacity, electrical resistivity, and magnetoresistance
measurements. Our investigations confirm that the compound exhibits two
magnetic transitions wi... | 1111.6240v1 |
2011-12-20 | Approximate Theory of Temperature Coefficient of Resistivity of Amorphous Semiconductors | In this paper, we develop an approximate theory of the temperature
coefficient of resistivity (TCR) and conductivity based upon the recently
proposed Microscopic Response Method. By introducing suitable approximations
for the lattice dynamics, localized and extended electronic states, we produce
new explicit forms for ... | 1112.4723v2 |
2011-12-23 | Microscopic Details of the Integer Quantum Hall Effect in an Anti-Hall Bar | Due to the lack of simulation tools that take into account the actual
geometry of complicated quantum Hall samples there are lots of experiments that
are not yet fully understood. Already some years ago R. G. Mani recorded a
shift of the Hall resistance transitions to lower magnetic fields in samples of
a Hall bar with... | 1112.5673v1 |
2012-02-27 | Coaxial Nanowire Resonant Tunneling Diodes from non-polar AlN/GaN on Silicon | Resonant tunneling diodes are formed using AlN/GaN core-shell nanowire
heterostructures grown by plasma assisted molecular beam epitaxy on n-Si(111)
substrates. By using a coaxial geometry these devices take advantage of
non-polar (m-plane) nanowire sidewalls. Device modeling predicts non-polar
orientation should enhan... | 1202.6052v2 |
2012-04-09 | Magnetic-field induced resistivity minimum with in-plane linear magnetoresistance of the Fermi liquid in SrTiO3-x single crystals | We report novel magnetotransport properties of the low temperature Fermi
liquid in SrTiO3-x single crystals. The classical limit dominates the
magnetotransport properties for a magnetic field perpendicular to the sample
surface and consequently a magnetic-field induced resistivity minimum emerges.
While for the field a... | 1204.1901v1 |
2012-04-20 | Size-dependent electronic-transport mechanism and sign reversal of magnetoresistance in Nd0.5Sr0.5CoO3 | A detailed investigation of electronic-transport properties of Nd0.5Sr0.5CoO3
has been carried out as a function of grain size ranging from micrometer order
down to an average size of 28 nm. Interestingly, we observe a size induced
metal-insulator transition in the lowest grain size sample while the bulk-like
sample is... | 1204.4572v1 |
2012-04-22 | Anomalous ferromagnetism and non-Fermi-liquid behavior in the Kondo lattice CeRuSi2 | The structural, electronic and magnetic properties of the Kondo-lattice
system CeRuSi2 are experimentally investigated and analyzed in the series of
other ternary cerium compounds. This system is shown to be an excellent model
system demonstrating coexistence of the Kondo effect and anomalous
ferromagnetism with a smal... | 1204.4903v3 |
2012-07-02 | Evolution of the magnetism of Tb(Co_{x}Ni_{1-x})_{2}B_{2}C | The magnetic properties of polycrystalline Tb(Co_{x}Ni_{1-x})_{2}B_{2}C
(x=0.2,0.4,0.6,0.8) samples were probed by magnetization, specific heat, ac
susceptibility, and resistivity techniques. For x{\neq}0.4, the obtained curves
are consistent with the features expected for the corresponding magnetic modes,
namely k_{1}... | 1207.0519v1 |
2012-07-19 | Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with Polymer Electrolyte | We report electrical characterization of monolayer molybdenum disulfide
(MoS2) devices using a thin layer of polymer electrolyte consisting of
poly(ethylene oxide) (PEO) and lithium perchlorate (LiClO4) as both a
contact-barrier reducer and channel mobility booster. We find that bare MoS2
devices (without polymer elect... | 1207.4824v1 |
2012-07-20 | Magnetic, magnetocaloric and magnetotransport properties of RSn_{1+x}Ge_{1-x} compounds (R=Gd, Tb, Er; x=0.1) | We have studied the magnetic, magnetocaloric and magnetotransport properties
of RSn1+xGe1-x(R=Gd, Tb, Er; x=0.1) series by means of magnetization, heat
capacity and resistivity measurements. It has been found that all the compounds
crystallize in the orthorhombic crystal structure described by the
centrosymmetric space... | 1207.4971v1 |
2012-07-30 | The Effect of Electrode Size on Memristor Properties: An Experimental and Theoretical Study | The width of the electrodes is not included in the current phenomenological
models of memristance, but is included in the memory-conservation (mem-con)
theory of memristance. An experimental study of the effect of changing the top
electrode width was performed on titanium dioxide sol-gel memristors. It was
demonstrated... | 1207.6933v1 |
2012-08-06 | A Variant of the Point Defect Model for Passivity of Metals | A variant of the point defect model originally enunciated by Macdonald and
co-workers is advanced and its theoretical implications for the steady state
current density, barrier layer thickness and the concentration of metal vacancy
at the metal/film interface are deduced. The differences between the original
point defe... | 1208.1096v1 |
2012-08-27 | Suppression of superconductivity in layered Bi4O4S3 by Ag doping | We report X-ray diffraction, magnetization and transport measurements for
polycrystalline samples of the new layered superconductor Bi4-xAgxO4S3
(0<x<0.2). The superconducting transition temperature (TC) decreases gradually
and finally suppressed for x>0.10. Accordingly, the resistivity changes from a
metallic behavior... | 1208.5307v1 |
2012-09-27 | Theoretical investigation of direct and phonon-assisted tunneling currents in InAlGaAs-InGaAs bulk and quantum well interband tunnel junctions for multi-junction solar cells | Direct and phonon-assisted tunneling currents in InAlGaAs-InGaAs bulk and
double quantum well interband tunnel heterojunctions are simulated rigorously
using the non-equilibrium Green's function formalism for coherent and
dissipative quantum transport in combination with a simple two-band
tight-binding model for the el... | 1209.6314v1 |
2012-10-11 | Prediction of semi-metallic tetragonal Hf2O3 and Zr2O3 from first-principles | A tetragonal phase is predicted for Hf2O3 and Zr2O3 using density functional
theory. Starting from atomic and unit cell relaxations of substoichiometric
monoclinic HfO2 and ZrO2, such tetragonal structures are only reached at zero
temperature by introducing the oxygen vacancy pair with the lowest formation
energy. The ... | 1210.3348v1 |
2012-10-12 | Superconducting LaAlO3/SrTiO3 Nanowires | We report superconductivity in quasi-1D nanostructures created at the
LaAlO3/SrTiO3 interface. Nanostructures having line widths w~10 nm are formed
from the parent two-dimensional electron liquid using conductive atomic force
microscope lithography. Nanowire cross-sections are small compared to the
superconducting cohe... | 1210.3606v1 |
2012-10-26 | Spin injection from a half-metal at finite temperatures | Spin injection from a half-metallic electrode in the presence of thermal spin
disorder is analyzed using a combination of random matrix theory,
spin-diffusion theory, and explicit simulations for the tight-binding s-d
model. It is shown that efficient spin injection from a half-metal is possible
as long as the effectiv... | 1210.7194v2 |
2012-12-03 | Resistive switching in ferroelectric BiFeO3 by 1.7 eV change of the Schottky barrier height | Using metal-ferroelectric junctions as switchable diodes was proposed several
decades ago. This was shown to actually work in PbZr(1-x)TixO3 (PZT) by Blom et
al. [P.W. M. Blom et al., Phys. Rev. Lett. 73, 2107 (1994)], who reported
switching in the rectification direction and changes of the current of about 2
orders of... | 1212.0483v1 |
2012-12-18 | Low temperature transport properties of multigraphene structures on 6H-SiC obtained by thermal graphitization: evidences of a presence of nearly perfect graphene layer | Transport properties of multigraphene layers on 6H-SiC substrates fabricated
by thermal graphitization of SiC were studied. The principal result is that
these structures were shown to contain a nearly perfect graphene layer situated
between the SiC substrate and multgraphene layer. It was found that the curves
of magne... | 1212.4272v1 |
2013-01-07 | Quantum Hall Effect in Hydrogenated Graphene | The quantum Hall effect is observed in a two-dimensional electron gas formed
in millimeter-scale hydrogenated graphene, with a mobility less than 10
$\mathrm{cm^{2}/V\cdot s}$ and corresponding Ioffe-Regel disorder parameter
$(k_{F}\lambda)^{-1}\gg1$. In zero magnetic field and low temperatures, the
hydrogenated graphe... | 1301.1257v1 |
2013-01-12 | Magnetic field-tuned Aharonov-Bohm oscillations and evidence for non-Abelian anyons at v=5/2 | We show that the resistance of the v=5/2 quantum Hall state, confined to an
interferometer, oscillates with magnetic field consistent with an Ising-type
non-Abelian state. In three quantum Hall interferometers of different sizes,
resistance oscillations at v=7/3 and integer filling factors have the magnetic
field perio... | 1301.2639v1 |
2013-02-07 | Thermal Conductivity and Phonon Transport in Suspended Few-Layer Hexagonal Boron Nitride | The thermal conductivity of suspended few-layer hexagonal boron nitride
(h-BN) was measured using a micro-bridge device with built-in resistance
thermometers. Based on the measured thermal resistance values of 11-12 atomic
layer h-BN samples with suspended length ranging between 3 and 7.5 um, the
room-temperature therm... | 1302.1890v1 |
2013-02-08 | Comparative study of the electronic structure, phonon spectra and electron-phonon interaction of ZrB2 and TiB2 | The electronic structure, optical and x-ray absorption spectra, angle
dependence of the cyclotron masses and extremal cross sections of the Fermi
surface, phonon spectra, electron-phonon Eliashberg and transport spectral
functions, temperature dependence of electrical resistivity of the MB2 (M=Ti
and Zr) diborides were... | 1302.2144v1 |
2013-02-15 | Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling | Tunneling junctions containing no ferromagnetic elements have been fabricated
and we show that distinct resistance states can be set by field cooling the
devices from above the N\'eel along different orientations. Variations of the
resistance up to 10% are found upon field cooling in applied fields of 2T,
in-plane or o... | 1302.3837v1 |
2013-03-06 | Highly reproducible metal/graphene contacts and stable electrical performance by UV-Ozone treatment | Resist residue from the device fabrication process is a general and
significant source of the metal/graphene contact interface contamination. In
this paper, Ultraviolet-Ozone (UVO) treatment is proven to be an effective way
of cleaning the metal/graphene interface. Electrical measurements of devices,
which were fabrica... | 1303.1353v2 |
2013-03-15 | Thermoelectric Properties of Polycrystalline NiSi3P4 | The Hall and Seebeck coefficients, electrical resistivity and thermal
conductivity of polycrystalline NiSi3P4 were characterized from 2 to 775K.
Undoped NiSi3P4 behaves like a narrow gap semiconductor, with activated
electrical resistivity \rho below room temperature and a large Seebeck
coefficient of ~400uV/K at 300K.... | 1303.3772v1 |
2013-03-29 | Hysteretic superconducting resistive transition in Ba0.07K0.93Fe2As2 | We have observed hysteresis in superconducting resistive transition curves of
Ba$_{0.07}$K$_{0.93}$Fe$_2$As$_2$ ($T_c\sim$8 K) below about 1 K for in-plane
fields. The hysteresis is not observed as the field is tilted away from the
$ab$ plane by 20$^{\circ}$ or more. The temperature and angle dependences of
the upper c... | 1303.7281v4 |
2013-04-04 | Benchtop Fabrication of Memristive Atomic Switch Networks | Recent advances in nanoscale science and technology provide possibilities to
directly self-assemble and integrate functional circuit elements within the
wiring scheme of devices with potentially unique architectures. Electroionic
resistive switching circuits comprising highly interconnected fractal
electrodes and metal... | 1304.1243v2 |
2013-04-08 | Ultra Low Power Associative Computing with Spin Neurons and Resistive Crossbar Memory | Emerging resistive-crossbar memory (RCM) technology can be promising for
computationally-expensive analog pattern-matching tasks. However, the use of
CMOS analog-circuits with RCM would result in large power-consumption and poor
scalability, thereby eschewing the benefits of RCM-based computation. We
propose the use of... | 1304.2281v1 |
2013-04-28 | Hidden Fermi Liquid, Scattering Rate Saturation and Nernst Effect: a DMFT Perspective | We investigate the transport properties of a correlated metal within
dynamical mean field theory. Canonical Fermi liquid behavior emerges only below
a very low temperature scale $T_{FL}$. Surprisingly the quasiparticle
scattering rate follows a quadratic temperature dependence up to much higher
temperatures and crosses... | 1304.7486v1 |
2013-05-10 | Geometric treatment of conduction electron scattering by crystal lattice strains and dislocations | A theory for conduction electron scattering by inhomogeneous crystal lattice
strains is developed, based on the differential geometric treatment of
deformations in solids. The resulting fully covariant Schr\"odinger equation
shows that the electrons can be described as moving in a non-Euclidean
background space in the ... | 1305.2455v3 |
2013-05-15 | Origin of Rigidity in Dry Granular Solids | Solids are distinguished from fluids by their ability to resist shear. In
traditional solids, the resistance to shear is associated with the emergence of
broken translational symmetry as exhibited by a non-uniform density pattern. In
this work, we focus on the emergence of shear-rigidity in a class of solids
where this... | 1305.3484v2 |
2013-06-24 | Polarization Controlled Ohmic to Schottky Transition at a Metal/Doped Ferroelectric Interface | Ferroelectric polar displacements have recently been observed in conducting
electron-doped BaTiO3. The co-existence of a ferroelectric phase and
conductivity opens the door to new functionalities which may provide a unique
route for novel device applications. Using first-principles methods and
electrostatic modeling we... | 1306.5763v2 |
2013-07-04 | Impact of intrinsic deformations on the negative differential resistance of monolayer MoS$_2$ ultra-short channel MOSFET | In this work we present a study on the impact of various intrinsic
deformations like ripples, twist, wrap on the electronic properties of
ultra-short monolayer MoS2 channels. The effect of deformation (3-7o twist or
wrap and 0.3-0.7 buckling amplitude) on a 3.5 nm planar monolayer MoS2 MOSFET
is evaluated by the densit... | 1307.1306v2 |
2013-07-24 | Extremely Large Magnetoresistance in the Nonmagnetic Metal PdCoO2 | Extremely large magnetoresistance is realized in the nonmagnetic layered
metal PdCoO2. In spite of a highly conducting metallic behavior with a simple
quasi-two-dimensional hexagonal Fermi surface, the interlayer resistance
reaches up to 35000% for the field along the [1-10] direction. Furthermore, the
temperature depe... | 1307.6503v2 |
2013-08-08 | Magneto-Transport Properties of Single Crystalline LaFeAsO | Measurements of magnetization, specific heat, electrical resistivity, Hall
effect, and magnetoresistance on single crystalline samples of LaFeAsO grown in
a NaAs flux are reported. While this material is known to be a semimetal, the
temperature dependence of the electrical resistivity data presented herein is
reminisce... | 1308.1885v1 |
2013-08-20 | Probing long-range correlations in the Berezinskii-Kosterlitz-Thouless fluctuation regime of ultra-thin NbN superconducting films using transport noise measurements | We probe the presence of long-range correlations in phase fluctuations by
analyzing the higher-order spectrum of resistance fluctuations in ultra-thin
NbN superconducting films. The non-Gaussian component of resistance
fluctuations is found to be sensitive to film thickness close to the
transition, which allows us to d... | 1308.4234v2 |
2013-09-04 | Current-Induced Gap Suppression in the Mott Insulator Ca$_2$RuO$_4$ | We present nonlinear conduction phenomena in the Mott insulator Ca2RuO4
investigated with a proper evaluation of self-heating effects. By utilizing a
non-contact infrared thermometer, the sample temperature was accurately
determined even in the presence of large Joule heating. We find that the
resistivity continuously ... | 1309.0909v1 |
2013-09-06 | Spin density wave order and fluctuations in Mn3Si: a transport study | We present a comprehensive transport investigation of the itinerant
antiferromagnet Mn3Si which undergoes a spin density wave (SDW) order below
T_N~21.3K. The electrical resistivity, the Hall-, Seebeck and Nernst effects
exhibit pronounced anomalies at the SDW transition, while the heat conductivity
is phonon dominated... | 1309.1636v1 |
2013-09-06 | Metal-insulator transition induced in SrTi_{1-x}V_xO_3 thin films | Epitaxial SrTi1-xVxO3 thin films with thicknesses of ~16 nm were grown on
(001)-oriented LSAT substrates using the pulsed electron-beam deposition
technique. The transport study revealed a temperature driven metal-insulator
transition (MIT) at 95 K for the film with x = 0.67. The films with higher
vanadium concentratio... | 1309.1745v1 |
2013-09-10 | Magnetoresistance evidence on surface state and field-dependent bulk gap in Kondo insulator SmB6 | Recently, the resistance saturation at low temperature in Kondo insulator
SmB6, a long-standing puzzle in condensed matter physics, was proposed to
originate from topological surface state. Here,we systematically studied the
magnetoresistance of SmB6 at low temperature up to 55 Tesla. Both temperature-
and angular-depe... | 1309.2378v3 |
2013-09-27 | Evidence for a Kondo destroying quantum critical point in YbRh2Si2 | The heavy-fermion metal YbRh$_{2}$Si$_{2}$ is a weak antiferromagnet below
$T_{N} = 0.07$ K. Application of a low magnetic field $B_{c} = 0.06$ T ($\perp
c$) is sufficient to continuously suppress the antiferromagnetic (AF) order.
Below $T \approx 10$ K, the Sommerfeld coefficient of the electronic specific
heat $\gamm... | 1309.7260v1 |
2013-09-29 | An Efficient Authorship Protection Scheme for Shared Multimedia Content | Many electronic content providers today like Flickr and Google, offer space
to users to publish their electronic media (e.g. photos and videos) in their
cloud infrastructures, so that they can be publicly accessed. Features like
including other information, such as keywords or owner information into the
digital materia... | 1309.7640v1 |
2013-10-11 | Enhanced low-energy magnetic excitations via suppression of the itinerancy in Fe0.98-zCuzTe0.5Se0.5 | We have performed resistivity and inelastic neutron scattering measurements
on three samples of Fe0.98-zCuzTe0.5Se0.5 with z = 0, 0.02, and 0.1. It is
found that with increasing Cu doping the sample's resistivity deviates
progressively from that of a metal. However, in contrast to expectations that
replacing Fe with Cu... | 1310.3064v1 |
2013-10-28 | Emergence of pressure-induced metamagnetic-like state in Mn-doped CdGeAs2 chalcopyrite | The effect of hydrostatic pressure on resistivity and magnetic ac
susceptibility has been studied in Mn-doped CdGeAs2 room-temperature (RT)
ferromagnetic chalcopyrite with two types of MnAs micro-clusters. The slight
increase of temperature by about 30 K in the region between RT and Curie
temperature TC causes a signif... | 1310.7451v1 |
2013-12-13 | Temperature-dependent structural property and power factor of n type thermoelectric Bi0.90Sb0.10 and Bi0.86Sb0.14 alloys | Thermal variation of structural property, linear thermal expansion
coefficient, resistivity, thermopower and power factor of polycrystalline
Bi1-xSbx (x=0.10, 0.14) samples are reported. Temperature-dependent powder
diffraction experiments indicate that samples do not undergo any structural
phase transition. Rietveld r... | 1312.3898v1 |
2014-02-11 | Taming the resistive switching in Fe/MgO/V/Fe magnetic tunnel junctions: An ab initio study | A possible mechanism for the resistive switching observed experimentally in
Fe/MgO/V/Fe junctions is presented. Ab initio total energy calculations within
the local density approximation and pseudopotential theory shows that by moving
the oxygen ions across the MgO/V interface one obtains a metastable state. It
is argu... | 1402.2517v2 |
2014-02-24 | Coplanar waveguide based ferromagnetic resonance in ultrathin film magnetic nanostructures: impact of conducting layers | We report broadband ferromagnetic resonance (FMR) measurements based on a
coplanar waveguide (CPW) of ultrathin magnetic film structures that comprise
in-plane/out-of-plane decoupled layers deposited on nonmagnetic buffer layers
of various thickness or other buffer structures with a diverse sheet
resistance. We show th... | 1402.5844v2 |
2014-03-05 | Electrical and optical properties of fluid iron from compressed to expanded regime | Using quantum molecular dynamics simulations, we show that the electrical and
optical properties of fluid iron change drastically from compressed to expanded
regime. The simulation results reproduce the main trends of the electrical
resistivity along isochores and are found to be in good agreement with
experimental dat... | 1403.1030v1 |
2014-03-06 | Correlation between bulk thermodynamic measurements and the low temperature resistance plateau in SmB6 | Topological insulators are materials characterized by dissipationless,
spin-polarized surface states resulting from non-trivial band topologies.
Recent theoretical models and experiments suggest that SmB6 is the first
topological Kondo insulator, in which the topologically non-trivial band
structure results from electr... | 1403.1462v2 |
2014-03-25 | Quantum Resistor-Capacitor Circuit with Majorana Fermion Modes in Chiral Topological Superconductor | We investigate the mesoscopic resistor-capacitor circuit consisting of a
quantum dot coupled to spatially separated Majorana fermion modes in a chiral
topological superconductor. We find substantially enhanced relaxation
resistance due to the nature of Majorana fermions, which are their own
anti-particles and composed ... | 1403.6239v2 |
2014-04-26 | Electric field control of magnetic properties and magneto-transport in composite multiferroics | We study magnetic state and electron transport properties of composite
multiferroic system consisting of a granular ferromagnetic thin film placed
above the ferroelectric substrate. Ferroelectricity and magnetism in this case
are coupled by the long-range Coulomb interaction. We show that magnetic state
and magneto-tra... | 1404.6671v2 |
2014-05-24 | Visible light enhanced field effect at LaAlO3/SrTiO3 interface | Electrical field and light-illumination have been two most widely used
stimuli in tuning the conductivity of semiconductor devices. Via capacitive
effect electrical field modifies the carrier density of the devices, while
light-illumination generates extra carriers by exciting trapped electrons into
conduction band1. H... | 1405.6250v1 |
2014-06-25 | Compressive strain-induced metal-insulator transition in orthorhombic SrIrO3 thin films | We have investigated the electronic properties of epitaxial orthorhombic
SrIrO3 thin-films under compressive strain. The metastable, orthorhombic SrIrO3
thin-films are synthesized on various substrates using an epi-stabilization
technique. We have observed that as in-plane lattice compression is increased,
the dc-resis... | 1406.6640v1 |
2014-06-28 | Exceptional Suppression of Flux-Flow Resistivity in FeSe$_{0.4}$Te$_{0.6}$ by Back-Flow from Excess Fe Atoms and Se/Te Substitutions | We measured the microwave surface impedance of FeSe$_{0.4}$Te$_{0.6}$ single
crystals with- and without external magnetic fields. The superfluid density
exhibited a quadratic temperature dependence, indicating a strong pair-breaking
effect. The flux-flow resistivity behaved as $\rho_f(B\ll B_{\rm
c2})/\rho_n=\alpha B/B... | 1406.7383v2 |
2014-07-08 | Non thermal and purely electronic resistive transition in narrow gap Mott insulators | Mott insulator to metal transitions under electric field are currently the
subject of numerous fundamental and applied studies. This puzzling effect,
which involves non-trivial out-of-equilibrium effects in correlated systems, is
indeed at play in the operation of a new class of electronic memories, the Mott
memories. ... | 1407.2038v1 |
2014-12-08 | Role of Se vacancies on Shubnikov de Haas oscillations in Bi2Se3: a combined magneto-resistance and positron annihilation study | Magneto resistance measurements coupled with positron lifetime measurements,
to characterize the vacancy type defects, have been carried out on the
topological insulator (TI) system Bi2Se3, of varying Se/Bi ratio. Pronounced
Shubnikov de Haas (SdH) oscillations are seen in nominal Bi2Se3.1 crystals for
measurements per... | 1412.2466v1 |
2014-12-08 | Effect of Electron-Phonon Coupling on Thermal Transport across Metal-Nonmetal Interface - A Second Look | The effect of electron-phonon (e-ph) coupling on thermal transport across
metal-nonmetal interfaces is yet to be completely understood. In this paper, we
use a series of molecular dynamics (MD) simulations with e-ph coupling effect
included by Langevin dynamics to calculate the thermal conductance at a model
metal-nonm... | 1412.2791v3 |
2014-12-15 | Percolation conductivity in hafnium sub-oxides | In this study, we demonstrated experimentally that formation of chains and
islands of oxygen vacancies in hafnium sub-oxides (HfO$_x$, $x<2$) leads to
percolation charge transport in such dielectrics. Basing on the model of
\'{E}fros-Shklovskii percolation theory good quantitative agreement between the
experimental and... | 1412.4478v1 |
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