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1999-03-15
Metal-insulator transition in CMR materials
We report on resistivity measurements in La$_{0.67}$Ca$_{0.33}$MnO$_{3}$ and Nd$_{0.7}$Sr$_{0.3}$MnO$_{3}$ thin films in order to elucidate the underlying mechanism for the CMR behavior. The experimental results are analyzed in terms of quantum phase transition ideas to study the nature of the metal-insulator transitio...
9903238v2
2000-01-06
Time Dependent Effects and Transport Evidence for Phase Separation in La_{0.5}Ca_{0.5}MnO_{3}
The ground state of La_{1-x}Ca_{x}MnO_{3} changes from a ferromagnetic metallic to an antiferromagnetic charge-ordered state as a function of Ca concentration at x ~ 0.50. We present evidence from transport measurements on a sample with x = 0.50 that the two phases can coexist, in agreement with other observations of p...
0001064v1
2000-02-14
Transition Temperature and Magnetoresistance in Double-Exchange Compounds with Moderate Disorder
We develop a variational mean-field theory of the ferromagnetic transition in compounds like Lanthanum-Manganite within the framework of the Double-Exchange Model supplemented by modest disorder. We obtain analytical expressions for the transition temperature, its variation with the valence electron-density and its dec...
0002191v1
2000-03-11
Effect of γ-irradiation on superconducting transition temperature and resistive transition in polycrystalline YBa_{2}Cu_{3}O_(7-δ)
A bulk polycrystalline sample of YBa_(2)Cu_(3)O_(7-\delta) (\delta \approx 0.1) has been irradiated by \gamma-rays with ^{60}Co source. Non-monotonic behavior of T_{c} with increasing irradiation dose \Phi (up to 220 MR) is observed: T_{c} decreases at low doses (\Phi < 50 MR) from initial value (\approx 93 K) by about...
0003192v1
2000-06-07
Step-wise Behavior of Vortex-Lattice Melting Transition in Tilted Magnetic Fields in Single Crystals Bi2Sr2CaCu2O8+d
The vortex lattice melting transition in single crystals Bi2Sr2CaCu2O8+d was studied by the in-plane resistivity measurements in magnetic fields tilted away from the c-axis to the ab-plane. In order to avoid the surface barrier effect which hinders the melting transition in the conventional transport measurements, we u...
0006095v1
2000-08-07
Large two-level magnetoresistance effect in doped manganite grain boundary junctions
We performed a systematic analysis of the tunneling magnetoresistance (TMR) effect in single grain boundary junctions formed in epitaxial La(2/3)Ca(1/3)MnO(3) films deposited on SrTiO(3) bicrystals. For magnetic fields H applied parallel to the grain boundary barrier, an ideal two-level resistance switching behavior wi...
0008105v1
2000-10-20
Composite Spin Waves, Quasi-Particles and Low Temperature resistivity in Double Exchange Systems
We make a quantum description of the electron low temperature properties of double exchange materials. In these systems there is a strong coupling between the core spin and the carriers spin. This large coupling makes the low energy spin waves to be a combination of ion and electron density spin waves. We study the for...
0010312v1
2000-12-13
Phase-coherence transition in granular superconductors with $π$ junctions
We study the three-dimensional XY-spin glass as a model for the resistive behavior of granular superconductors containing a random distribution of $\pi$ junctions, as in high-$T_c$ superconducting materials with d-wave symmetry. The $\pi$ junctions leads to quenched in circulating currents (chiralities) and to a chiral...
0012238v1
2000-12-19
Resistance Spikes at Transitions between Quantum Hall Ferromagnets
We report a new manifestation of first-order magnetic transitions in two-dimensional electron systems. This phenomenon occurs in aluminum arsenide quantum wells with sufficiently low carrier densities and appears as a set of hysteretic spikes in the resistance of a sample placed in crossed parallel and perpendicular ma...
0012367v1
2001-01-30
Stress-induced metallic behavior under magnetic field in Pr$_{1-x}$Ca$_{x}$MnO$_{3}$ (x = 0.5 and 0.4) thin films
We have investigated the role of the stress-induced by the presence of the substrate in thin films of colossal magnetoresistive manganites on structural, resistive and magnetic properties. Because of the strong coupling between the small structural distortions related to the charge-ordering (CO) and the resistive prope...
0101448v1
2001-04-18
Electron Transport in Diborides: Observation of Superconductivity in ZrB2
We report on syntheses and electron transport properties of polycrystalline samples of diborides (AB2) with different transition metals atoms (A=Zr,Nb,Ta). The temperature dependence of resistivity, \rho(T), and ac susceptibility of these samples reveal superconducting transition of ZrB2 with Tc=5.5 K, while NbB2 and T...
0104323v1
2001-05-02
In-plane Hall effect in c-axis-oriented MgB2 thin films
We have measured the longitudinal resistivity and the Hall resistivity in the ab-plane of highly c-axis-oriented MgB2 thin films. In the normal state, the Hall coefficient (R_H) behaves as R_H ~ T with increasing temperature (T) up to 130 K and then deviates from that linear T-dependence at higher temperatures. The T^2...
0105024v2
2001-05-04
A New Method of Probing the Phonon Mechanism in Superconductors including MgB$_{2}$
Weak localization has a strong influence on both the normal and superconducting properties of metals. In particular, since weak localization leads to the decoupling of electrons and phonons, the temperature dependence of resistance (i.e., $\lambda_{tr}$) is decreasing with increasing disorder, as manifested by Mooij's ...
0105091v1
2002-01-25
Degradation of LaMnO{3-y} surface layer in LaMnO{3-y}/ metal interface
We report electrical measurements showing the degradation processes of LaMnO$_{3-y}$ (LaMnO) in LaMnO/normal metal interface in both point contact and planar-type junctions. Immediately after the preparation of the interface, the degradation process was followed by measuring the evolution of the junction resistance ver...
0201460v1
2002-02-06
Thermoelectric properties of the brownmillerite oxide Ca_{2-y}La_yCo_{2-x}Al_xO_5
We prepared the brownmillerite oxide Ca_{2-y}La_yCo_{2-x}Al_xO_5, and found that it was an n-type conductor. The thermopower and the resistivity of the single crystal are -90 microV/K and 68 mOhm cm along the ab direction at 440 K, which suggest relatively good thermoelectrical properties, compared with other transitio...
0202087v1
2002-04-29
Concentration of Charge Carriers and Anomalous Gap Parameter in the Normal State of High-$T_c$ Superconductors
Fermi-Dirac statistics has been utilized by introducing the average ionization energy ($E_I$) as an additional anomalous energy gap in order to derive the two-dimensional concentration of charge carriers and the phenomenological resistivity model for the superconducting polycrystalline materials. The best fitted values...
0204601v1
2002-08-09
Quasi-one-dimensional superconductivity above 300 K and quantum phase slips in individual carbon nanotubes
A great number of the existing data for electrical transport, the Altshuler Aronov Spivak and Aharonov Bohm effects, as well as the tunneling spectra of individual carbon nanotubes can be well explained by theories of the quantum phase slips in quasi-one-dimensional superconductors. The existing data consistently sugge...
0208198v4
2002-08-13
Characterization of one-dimensional quantum channels in InAs/AlSb
We report the magnetoresistance characteristics of one-dimensional electrons confined in a single InAs quantum well sandwiched between AlSb barriers. As a result of a novel nanofabrication scheme that utilizes a 3nm-shallow wet chemical etching to define the electrostatic lateral confinement, the system is found to pos...
0208265v1
2002-08-27
Anomalous Hall Effect of Calcium-doped Lanthanum Cobaltite Films
The Hall resistivity, magnetoresistance, and magnetization of La_{1-x}Ca_{x}CoO_{3} epitaxial films with x between 0.25 and 0.4 grown on lanthanum aluminate were measured in fields up to 7 T. The x=1/3 film, shows a reentrant metal insulator transition. Below 100 K, the x=1/3 and 0.4 films have significant coercivity w...
0208530v1
2003-01-24
Semiconductive and Photoconductive Properties of the Single Molecule Magnets Mn$_{12}$-Acetate and Fe$_8$Br$_8$
Resistivity measurements are reported for single crystals of Mn$_{12}$-Acetate and Fe$_8$Br$_8$. Both materials exhibit a semiconductor-like, thermally activated behavior over the 200-300 K range. The activation energy, $E_a$, obtained for Mn$_{12}$-Acetate was 0.37 $\pm$ 0.05 eV, which is to be contrasted with the val...
0301497v1
2003-02-12
Avoided Antiferromagnetic Order and Quantum Critical Point in CeCoIn$_5$
We measured specific heat and resistivity of heavy fermion CeCoIn5 between the superconducting critical field $H_{c2} = 5 T$ and 9 T, with field in the [001] direction, and at temperatures down to 50mK. At 5T the data show Non Fermi Liquid behavior down to the lowest temperatures. At field above 8T the data exhibit cro...
0302226v1
2003-02-21
Anomalous Hall Effect and Magnetoresistance of SrFe1-xCoxO3-d
Transport and magnetic studies on polycrystalline samples of SrFe1-xCoxO3-d have been carried out to investigate the relationship between the magnetic structure and the anomalous Hall resistivity rH. The hysteretic behavior of the magnetization observed in the measurements with varying temperature T up and then down af...
0302436v1
2003-02-24
Spin-wave scattering at low temperatures in manganite films
The temperature $T$ and magnetic field $H$ dependence of the resistivity $\rho$ has been measured for La$_{0.8-y}$Sr$_{0.2}$MnO$_{3}$ (y=0 and 0.128) films grown on (100) SrTiO$_{3}$ substrates. The low-temperature $\rho$ in the ferromagnetic metallic region follows well $\rho (H,T)=\rho _{0}(H)+A(H)\omega_{s}/\sinh (\...
0302486v1
2003-04-07
Thickness dependence of the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition
We have studied the effect of deposition rate and layer thickness on the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition on 4H-SiC substrates. The MgB2 film deposition rate depends linearly on the concentration of B2H6 in the inlet gas mixture. We found that the superconductin...
0304164v1
2003-06-05
Variable-range-hopping conductivity of half-doped bilayer manganite LaSr$_{2}$Mn$_{2}$O$_{7}$
We report measurements of in-plane $\rho_{ab}$ and out-of-plane $\rho_{c}$ resistivities on a single crystal of the half-doped bilayer manganite LaSr$_{2}$Mn$_{2}$O$_{7}$. In the temperature $T$ range 220 to 300 K, the resistive anisotropy $\rho_{c}/\rho_{ab}=A+B/T$ ($A$ and $B$ constants), which provides evidence for ...
0306133v1
2003-06-11
Enhanced electrical resistivity before Néel order in the metals, RCuAs$_2$ (R= Sm, Gd, Tb and Dy
We report an unusual temperature (T) dependent electrical resistivity($\rho$) behavior in a class of ternary intermetallic compounds of the type RCuAs$_2$ (R= Rare-earths). For some rare-earths (Sm, Gd, Tb and Dy) with negligible 4f-hybridization, there is a pronounced minimum in $\rho$(T) far above respective N\'eel t...
0306266v1
2003-07-14
Interplay between disorder, quantum and thermal fluctuations in ferromagnetic alloys: The case of UCu2Si(2-x)Ge(x)
We consider, theoretically and experimentally, the effects of structural disorder, quantum and thermal fluctuations in the magnetic and transport properties of certain ferromagnetic alloys.We study the particular case of UCu2Si(2-x)Ge(x). The low temperature resistivity, rho(T,x), exhibits Fermi liquid (FL) behavior as...
0307328v2
2003-10-20
Studies of Current-Driven Excitations in Co/Cu/Co Trilayer Nanopillars
We measure the dynamic resistance of a Co/Cu/Co trilayer nanopillar at varied magnetic field $H$ and current $I$. The resistance displays the usual behavior, almost symmetric in $H$, both when magnetization switching is hysteretic at small $I,H$, and reversible at larger $I,H$. We show differences in the $I,H$ magnetiz...
0310472v1
2003-11-17
The Normal State Resistivity of Grain Boundaries in YBa2Cu3O7-delta
Using an optimized bridge geometry we have been able to make accurate measurements of the properties of YBa2Cu3O7-delta grain boundaries above Tc. The results show a strong dependence of the change of resistance with temperature on grain boundary angle. Analysis of our results in the context of band-bending allows us t...
0311386v1
2004-02-09
Molecular electronics exploiting sharp structure in the electrode density-of-states. Negative differential resistance and Resonant Tunneling in a poled molecular layer on Al/LiF electrodes
Density-functional calculations are used to clarify the role of an ultrathin LiF layer on Al electrodes used in molecular electronics. The LiF layer creates a sharp density of states (DOS), as in a scanning-tunneling microscope (STM) tip. The sharp DOS, coupled with the DOS of the molecule leads to negative differentia...
0402257v1
2004-05-06
The antiferromagnetic transition of UPd2Al3 break-junctions: A new realization of N-shaped current-voltage characteristics
We have investigated metallic break junctions of the heavy-fermion compound UPd2Al3 at low temperatures between 0.1K and 9K and in magnetic fields up to 8T. Both the current-voltage I(V) characteristics and the dV/dI (V) spectra clearly showed the superconducting ($T_{\rm c}\simeq$ 1.8K) as well as the antiferromagneti...
0405118v1
2004-05-11
Weak links and phase slip centers in superconducting MgB2 wires
MgB2 superconducting wires were produced by the Mg diffusion method. Scanning electron microscopy (SEM), optical microscopy, dispersive x-ray analysis (EDS) and XRD diffraction were used to study the physical structure and content of the wires. Magnetic properties (Tcm, Hc1, Hc2, Jc by the Bean model) were obtained wit...
0405219v1
2004-05-27
Magnetic, electrical resistivity, heat-capacity and thermopower anomalies in CeCuAs2
The results of magnetic susceptibility, electrical resistivity ($\rho$), heat-capacity (C) and thermopower (S) measurements on CeCuAs2, forming in ZrCuSi2-type tetragonal structure, are reported. Our investigations reveal that Ce is trivalent and there is no clear evidence for long range magnetic ordering down to 45 mK...
0405638v1
2004-06-24
On Electron Transport in ZrB12, ZrB2 and MgB2
We report on measurements of the temperature dependence of resistivity, $\rho(T)$, for single crystal samples of ZrB$_{12}$, ZrB$_{2}$ and polycrystalline samples of MgB$_{2}$. It is shown that cluster compound ZrB$_{12}$ behaves like a simple metal in the normal state, with a typical Bloch -- Gr\"uneisen $\rho(T)$ dep...
0406615v1
2004-07-07
Kondo Behavior of U in CaB$_6$
Replacing U for Ca in semiconducting CaB$_6$ at the few at.% level induces metallic behaviour and Kondo-type phenomena at low temperatures, a rather unusual feature for U impurities in metallic hosts. For Ca$_{0.992}$U$_{0.008}$B$_6$, the resistance minimum occurs at $T$ = 17 K. The subsequent characteristic logarithmi...
0407158v1
2004-08-11
Conductivity, weak ferromagnetism and charge instability in $α-MnS$ single crystal
The temperature dependence of resistivity, magnetization and electron-spin resonance of the $\alpha- MnS $ single crystal were measured in temperature range of $5 K < T < 550 K$. Magnetization hysteresis in applied magnetic field up to 0.7 T at $T=5 K, 77 K, 300 K$, irreversible temperature behavior of magnetization an...
0408232v1
2004-08-26
Deviations from plastic barriers in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ thin films
Resistive transitions of an epitaxial Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ thin film were measured in various magnetic fields ($H\parallel c$), ranging from 0 to 22.0 T. Rounded curvatures of low resistivity tails are observed in Arrhenius plot and considered to relate to deviations from plastic barriers. In order to cha...
0408555v2
2004-08-27
Examination of the c-axis resistivity of Bi_{2}Sr_{2-x}La_xCuO_{6+δ} in magnetic fields up to 58 T
We measure the magnetic-field dependence of the c-axis resistivity, \rho_c(H), in a series of Bi_{2}Sr_{2-x}La_xCuO_{6+\delta} (BSLCO) single crystals for a wide range of doping using pulsed magnetic fields up to 58 T. The behavior of \rho_c(H) is examined in light of the recent determination of the upper critical fiel...
0408603v1
2004-10-06
Ballistic resistivity in aluminum nanocontacts
One of the major industrial challenges is to profit from some fascinating physical features present at the nanoscale. The production of dissipationless nanoswitches (or nanocontacts) is one of such attractive applications. Nevertheless, the lack of knowledge of the real efficiency of electronic ballistic/non dissipativ...
0410138v1
2004-12-01
Magnetoresistive Effects in Ferromagnet-Superconductor Multilayers
We consider a nanoscale system consisting of Manganite-ferromagnet and Cuprate-superconductor multilayers in a spin valve configuration. The magnetization of the bottom Manganite-ferromagnet is pinned by a Manganite-antiferromagnet. The magnetization of the top Manganite-ferromagnet is coupled to the bottom one via ind...
0412005v1
2004-12-12
Effect of oxygen content on the transport properties and magnetoresistance in [Ca$_{2}$CoO$_{3-δ}$]$_{0.62}$[CoO$_{2}$] single crystals
Transport property is investigated in [Ca$_{2}$CoO$_{3-\delta}$]$_{0.62}$[CoO$_{2}$] single crystals obtained by varying annealing conditions. The $\rho_{ab}(T)$ exhibits a resistivity minimum, and the temperature corresponding to this minimum increases with the loss of oxygen content, indicative of the enhancement of ...
0412298v1
2004-12-27
Ferromagnetism and possible heavy fermion behavior in single crystals of NdOs$_4$Sb$_{12}$
Single crystals of the filled-skutterudite compound NdOs$_4$Sb$_{12}$ have been investigated by means of electrical resistivity, magnetization, and specific heat measurements. The NdOs$_4$Sb$_{12}$ crystals have the LaFe$_4$P$_{12}$-type cubic structure with a lattice parameter of 9.3 \AA. Possible heavy-fermion behavi...
0412713v3
2005-02-03
Transverse "resistance overshoot" in a Si/SiGe two-dimensional electron gas in the quantum Hall effect regime
We investigate the peculiarities of the "overshoot" phenomena in the transverse Hall resistance R_{xy} in Si/SiGe. Near the low magnetic field end of the quantum Hall effect plateaus, when the filling factor \nu approaches an integer i, R_{xy} overshoots the normal plateau value h/ie^2. However, if magnetic field B inc...
0502094v1
2005-03-03
Transport properties of diluted magnetic semiconductors: Dynamical mean field theory and Boltzmann theory
The transport properties of diluted magnetic semiconductors (DMS) are calculated using dynamical mean field theory (DMFT) and Boltzmann transport theory. Within DMFT we study the density of states and the dc-resistivity, which are strongly parameter dependent such as temperature, doping, density of the carriers, and th...
0503077v1
2005-04-22
Blue light-emitting diode based on ZnO
A near-band-edge bluish electroluminescence (EL) band centered at around 440 nm was observed from ZnO p-i-n homojunction diodes through a semi-transparent electrode deposited on the p-type ZnO top layer. The EL peak energy coincided with the photoluminescence peak energy of an equivalent p-type ZnO layer, indicating th...
0504587v1
2005-05-17
Transport properties of moderately disordered UCu$_4$Pd
We present a detailed study on the (magneto)transport properties of as-cast and heat treated material UCu$_4$Pd. We find a pronounced sample dependence of the resistivity $\rho$ of as-cast samples, and reproduce the annealing dependence of $\rho$. In our study of the Hall effect we determine a metallic carrier density ...
0505418v1
2005-07-02
Drastic ground state changes induced by Ni substitution in NaxCoO2
We report on the effect of Ni substitution at the Co site on the physical properties of NaxCoO2 system by investigating the series NaxCo1-yNiyO2 (x=0.75, 0<y<0.15). An upturn in the resistivity is observed in all Ni substituted samples as the temperature is lowered, suggestive of the occurrence of a Metal-Insulator Tra...
0507045v1
2005-08-19
Determination of the intrinsic anomalous Hall effect of SrRuO$_3$
The anomalous Hall effect (AHE) of epitaxial SrRuO$_3$ films with varying lattice parameters is investigated, and analyzed according to the Berry-phase scenario. SrRuO$_3$ thin films were deposited on SrTiO$_3$ substrates directly, or using intermediate buffer layers, in order to finely control the epitaxial strain. Th...
0508443v1
2005-09-05
Magnetic and electronic transport percolation in epitaxial GeMn films
Electronic transport and magnetic properties of Ge1-xMnx/Ge(100) films are investigated as a function of Mn dilution. Depending on x, characteristic temperatures separate different regimes in both properties. Resistivity exhibits an insulator-like behavior in the whole temperature range and, below about 80 K, two disti...
0509111v1
2005-10-07
Size Dependent Breakdown of Superconductivity in Ultranarrow Nanowires
Below a certain temperature Tc (typically cryogenic), some materials lose their electric resistance R entering a superconducting state. Folowing the general trend toward a large scale integration of a greater number of electronic components, it is desirable to use superconducting elements in order to minimize heat diss...
0510181v1
2005-10-07
Evidence of ratchet effect in nanowires of a conducting polymer
Ratchet effect, observed in many systems starting from living organism to artificially designed device, is a manifestation of motion in asymmetric potential. Here we report results of a conductivity study of Polypyrrole nanowires, which have been prepared by a simple method to generate a variation of doping concentrati...
0510188v1
2005-10-11
Highly oriented VO2 thin films prepared by sol-gel deposition method
Highly oriented VO2 thin films were grown on sapphire substrates by the sol-gel method that includes a low pressure annealing in an oxygen atmosphere. This reduction process effectively promotes the formation of the VO2 phase over a relatively wide range of pressures below 100 mTorr and temperatures above 400oC. X-ray ...
0510267v2
2005-11-10
Thermoelectric properties of the layered Pd oxide R_2PdO_4 (R = La, Nd, Sm and Gd)
We prepared polycrystalline samples of R$_2$PdO$_4$ (R = La, Nd, Sm and Gd) using a NaCl-flux technique. The measured resistivity is of the order of 10$^3-10^4$ $\Omega$cm at room temperature, which is two orders of magnitude smaller than the values reported so far. We further studied the substitution effects of Ce for...
0511245v1
2005-11-10
Anderson localization in carbon nanotubes: defect density and temperature effects
The role of irradiation induced defects and temperature in the conducting properties of single-walled (10,10) carbon nanotubes has been analyzed by means of a first-principles approach. We find that di-vacancies modify strongly the energy dependence of the differential conductance, reducing also the number of contribut...
0511265v1
2005-11-17
Electrical Switching in Metallic Carbon Nanotubes
We present first-principles calculations of quantum transport which show that the resistance of metallic carbon nanotubes can be changed dramatically with homogeneous transverse electric fields if the nanotubes have impurities or defects. The change of the resistance is predicted to range over more than two orders of m...
0511447v1
2005-11-28
Laser microscopy of tunneling magnetoresistance in manganite grain-boundary junctions
Using low-temperature scanning laser microscopy we directly image electric transport in a magnetoresistive element, a manganite thin film intersected by a grain boundary (GB). Imaging at variable temperature allows reconstruction and comparison of the local resistance vs temperature for both, the manganite film and the...
0511662v1
2006-03-16
Coordinate transformation in the model of long Josephson junctions: geometrically equivalent Josephson junctions
The transition from the model of a long Josephson junction of variable width to the model of a junction with a coordinate-dependent Josephson current amplitude is effected through a coordinate transformation. This establishes the correspondence between the classes of Josephson junctions of variable width and quasi-one-...
0603439v1
2006-03-28
Depolarizing-Field Effect in Strained Nanoscale Ferroelectric Capacitors and Tunnel Junctions
The influence of depolarizing field on the magnitude and stability of a uniform polarization in ferroelectric capacitors and tunnel junctions is studied using a nonlinear thermodynamic theory. It is predicted that, in heterostructures involving strained epitaxial films and metal electrodes, the homogeneous polarization...
0603762v2
2006-03-31
Mechanism and Scalability in Resistive Switching of Metal-Pr0.7Ca0.3MnO3 Interface
The polarity-dependent resistive-switching across metal-Pr0.7Ca0.3MnO3 interfaces is investigated. The data suggest that shallow defects in the interface dominate the switching. Their density and fluctuation, therefore, will ultimately limit the device size. While the defects generated/annihilated by the pulses and the...
0603832v1
2006-04-12
Influence of Domain Wall on Magnetocaloric Effect in GdPt$_{2}$
The resistivity, magnetoresistance and in-field heat capacity measurements were performed on GdPt$_{2}$ intermetallic compound. The magnetocaloric parameters $\Delta T_{ad}$ and $-\Delta S$ were derived from the in-field heat capacity data. Comparison has been made between the magnetocaloric effect $-\Delta S$ and diff...
0604297v1
2006-06-08
Weak localization correction to the anomalous Hall effect in polycrystalline Fe films
In situ transport measurements have been made on ultrathin ($<$100 {\AA} thick) polycrystalline Fe films as a function of temperature and magnetic field for a wide range of disorder strengths. For sheet resistances $R_{xx}$ less than $\sim 3k\Omega$, we find a logarithmic temperature dependence of the anomalous Hall co...
0606215v2
2006-07-24
Magnetoresistance in Thin Permalloy Film (10nm-thick and 30-200nm-wide) Nanocontacts Fabricated by e-Beam Lithography
In this paper we show spin dependent transport experiments in nanoconstrictions ranging from 30 to 200nm. These nanoconstrictions were fabricated combining electron beam lithography and thin film deposition techniques. Two types of geometries have been fabricated and investigated. We compare the experimental results wi...
0607608v1
2006-07-28
Magnetic hysteresis in the microwave surface resistance of Nb samples in the critical state
We discuss the hysteretic behavior of the field-induced variations of the microwave surface resistance in superconductors in the critical state. Measurements have been performed in a bulk sample of Nb and a powdered one at different values of the temperature. We discuss a model, based on the Coffey and Clem theory, in ...
0607754v1
2006-09-25
Doping Dependence of Polaron Hopping Energies in La(1-x)Ca(x)MnO(3) (0<= x<= 0.15)
Measurements of the low-frequency (f<= 100 kHz) permittivity at T<= 160 K and dc resistivity (T<= 430 K) are reported for La(1-x)Ca(x)MnO(3) (0<= x<= 0.15). Static dielectric constants are determined from the low-T limiting behavior of the permittivity. The estimated polarizability for bound holes ~ 10^{-22} cm^{-3} im...
0609634v1
2006-10-10
Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures
The occurrence of inhomogeneous spin-density distribution in multilayered ferromagnetic diluted magnetic semiconductor nanostructures leads to strong dependence of the spin-polarized transport properties on these systems. The spin-dependent mobility, conductivity and resistivity in (Ga,Mn)As/GaAs,(Ga,Mn)N/GaN, and (Si,...
0610275v1
2006-10-12
Domain wall magnetoresistance in a nanopatterned La(2/3)Sr(1/3)MnO3 track
We have measured the contribution of magnetic domain walls (DWs) to the electric resistance in epitaxial manganite films patterned by electron-beam lithography into a track containing a set of notches. We find a DW resistance-area (RA) product of ~2.5 10^(-13) Ohm/m^2 at low temperature and bias, which is several order...
0610338v1
2006-10-25
Origin of negative differential resistance in molecular junctions of Rose Bengal
Negative differential resistance (NDR) is tuned at junctions of electronically different dimer and trimer of Rose Bengal on an atomic flat gold (111) surface. Isolated molecule did not show any NDR. But it was induced to show double NDR with large peak to valley ratio (1.8~3.1) in room temperature via charging its neig...
0610683v1
2006-11-13
Weak antilocalization in epitaxial graphene: evidence for chiral electrons
Transport in ultrathin graphite grown on silicon carbide is dominated by the electron-doped epitaxial layer at the interface. Weak anti-localization in 2D samples manifests itself as a broad cusp-like depression in the longitudinal resistance for magnetic fields 10 mT$< B <$ 5 T. An extremely sharp weak-localization re...
0611339v2
2006-12-19
Semiconductors between spin-polarized source and drain
Injecting spins into a semiconductor channel and transforming the spin information into a significant electrical output signal is a long standing problem in spintronics. Actually, this is the prerequisite of several concepts of spin transistor. In this tutorial article, we discuss the general problem of spin transport ...
0612495v1
2007-01-17
Anomalous Hall effect in anatase Ti1-xCoxO2 at low temperature regime
Anomalous Hall effect (AHE) of a ferromagnetic semiconductor anatase \cotio thin film is studied from 10K to 300K. Magnetic field dependence of anomalous Hall resistance is coincident with that of magnetization, while the anomalous Hall resistance decreases at low temperature in spite of nearly temperature-independent ...
0701395v2
2007-02-17
Room-Temperature Quantum Hall Effect in Graphene
The quantum Hall effect (QHE), one example of a quantum phenomenon that occur on a truly macroscopic scale, has been attracting intense interest since its discovery in 1980 and has helped elucidate many important aspects of quantum physics. It has also led to the establishment of a new metrological standard, the resist...
0702408v1
2007-02-20
Anomalous electric conductions in KSbO3-type metallic rhenium oxides
Single crystals of KSbO3-type rhenium oxides, La4Re6O$19, Pb6Re6O19, Sr2Re3O9 and Bi3Re3O11, were synthesized by a hydrothermal method. Their crystal structures can be regarded as a network of three-dimensional orthogonal-dimer lattice of edge-shared ReO6 octahedra. All of them exhibit small magnitude of Pauli paramagn...
0702451v1
2007-03-14
Electrical transport and percolation in magnetoresistive manganite / insulating oxide composites: case of La0.7Ca0.3MnO3 / Mn3O4
We report the results of electrical resistivity measurements carried out on well-sintered La0.7Ca0.3MnO3 / Mn3O4 composite samples with almost constant composition of the magnetoresistive manganite phase (La0.7Ca0.3MnO3). A percolation threshold (fc) occurs when the La0.7Ca0.3MnO3 volume fraction is ~ 0.19. The depende...
0703367v1
2007-03-25
Origin of superconductivity in nominally "undoped" T'-La$_{2-x}$Y$_{x}$CuO$_{4}$ films
We have systematically studied the transport properties of the La$_{2-x}$Y$_{x}$CuO$_{4}$(LYCO) films of T'-phase ($0.05\leq x \leq 0.30$). In this nominally "undoped" system, superconductivity was acquired in certain Y doping range ($0.10\leq x \leq 0.20$). Measurements of resistivity, Hall coefficients in normal stat...
0703643v1
2005-11-13
Non-radiating and radiating configurations driven by left-handed metamaterials
It is shown that a pair of identical emitters (e.g. wire dipole antennas) in the focal points of a disc, made of left-handed metamaterial (a "perfect" lens), form a non-radiating electromagnetic configuration. The emitters are fed with voltages of equal magnitude and pi-out-of-phase. Detailed finite-difference time-dom...
0511113v1
2007-04-16
Memory function formalism approach to electrical conductivity and optical response of dilute magnetic semiconductors
A combination of the memory function formalism and time-dependent density-functional theory is applied to transport in dilute magnetic semiconductors. The approach considers spin and charge disorder and electron-electron interaction on an equal footing. Within the weak disorder limit and using a simple parabolic approx...
0704.2061v1
2007-05-15
Magnetic, magneto-thermal and magneto-transport properties in SmMn2Si2-xGex compounds
The effect of Ge substitution for Si in SmMMn2Si2-xGex compounds has been studied. The Sm ordering temperature is found to be much larger in the compound with x=2, as compared to the compounds with x=0 and 1. The increase in the intra layer Mn-Mn distance is found to be responsible for this increase. Among these three ...
0705.2237v1
2007-06-01
Anomalous magnetoresistance of EuB$_{5.99}$C$_{0.01}$: Enhancement of magnetoresistance in systems with magnetic polarons
We present results of measurements of electrical, magnetic and thermal properties of EuB$_{5.99}$C$_{0.01}$. The observed anomalously large negative magnetoresistance as above, so below the Curie temperature of ferromagnetic ordering $T_C$ is attributed to fluctuations in carbon concentration. Below $T_C$ the carbon ri...
0706.0091v1
2007-07-03
Spatial correlation of linear and nonlinear electron transport in superconducting microwave resonator: laser scanning microscopy analysis
Spatially-resolved techniques of laser scanning microscopy (LSM) have been used to image simultaneously the spatial variations of (i) rf current flow, J$_RF$(x,y), of (ii) areas of resistive dissipation and (iii) the sources of microwave nonlinearity (NL) in an operating superconducting resonator. The RF power dependen...
0707.0358v1
2007-07-04
Resistive Switching in Cr doped SrTiO3: An X-ray Absorption Spectroscopy study
X-ray absorption spectroscopy was used to study the microscopic origin of conductance and resistive switching in chromium doped strontium titanate (Cr:SrTiO3). Differences in the x-ray absorption near edge spectroscopy (XANES) at the Cr K-edge indicate that the valence of Cr changes from 3+ to 4+ underneath the anode o...
0707.0655v1
2007-08-21
Negative differential resistance of Styrene on an ideal Si[111] surface: dependence of the I-V characteristics on geometry, surface doping and shape of the STM-tip
We study the electron transport properties through a supported organic molecule styrene (C8H8) on an ideal silicon surface Si[111] and probed by a STM-tip. The I-V characteristics and the differential conductance of the molecule are calculated using a self consistent approach based on non equilibrium Green's functions....
0708.2834v1
2007-12-21
Vibronic polarons: comments on a model for the colossal field-resistance effects in manganites
In addition to mechanisms already proposed to account for the formation in manganites of a small-polaron superlattice above the Curie temperature Tc and to a metallic-like sea of large polarons below Tc, we now consider other observed colossal-resistance inducing fields, such as magnetic, electric, photon, or strain fi...
0712.3803v1
2008-03-05
The behavior of magnetic ordering and the KOndo effect in the alloys, Ce2Rh(1-x)Co(x)Si3: Evidence from bulk studies for Fermi-surface change during magnetic ordering - QCP transformation and applicability of SDW pictur
The results of magnetic susceptibility, electrical resistivity (rho), and heat capacity measurements as a function of temperature are reported for the alloys, Ce2Rh(1-x)Co(x)Si3, crystallizing in an AlB2-derived hexagonal strcture. Ce2RhSi3 exhibits antiferromagnetic ordering at 7 K. The Neel temperature decreases grad...
0803.0652v1
2008-03-09
Upper critical field, Hall effect and magnetoresistance in the iron-based layered superconductor LaFeAsO_{0.9}F_{0.1-δ}
By using a two-step method, we successfully synthesized the iron based new superconductor LaFeAsO_{0.9}F_{0.1-\delta}$. The resistive transition curves under different magnetic fields were measured, leading to the determination of the upper critical field Hc2(T) of this new superconductor. The value of Hc2 at zero temp...
0803.1288v2
2008-03-12
Electron transport and thermoelectric properties of layered perovskite LaBaCo2O5.5
We have investigated the systematic transport properties of the layered 112-type cobaltite LaBaCo2O5.5 by means of electrical resistivity, magnetoresistance, electroresistance and thermoelectric measurements in various conditions. In order to understand the complex conduction mechanism of LaBaCo2O5.5, the transport dat...
0803.1806v1
2008-03-14
From Ohmic to Ballistic Transport in Oriented Graphite
In this work we show that for a quasi-2D system of size $\Omega$ and thickness $t$ the resistance goes as $(2\rho/\pi t)\ln(\Omega/W)$, diverging logarithmically with the size. Measurements in highly oriented pyrolytic graphite (HOPG) as well as numerical simulations confirm this relation. Furthermore, we present an ex...
0803.2203v2
2008-03-19
Theory of quantum metal to superconductor transitions in highly conducting systems
We derive the theory of the quantum (zero temperature) superconductor to metal transition in disordered materials when the resistance of the normal metal near criticality is small compared to the quantum of resistivity. This can occur most readily in situations in which ``Anderson's theorem'' does not apply. We explici...
0803.2902v2
2008-03-23
Origin of negative differential resistance in a strongly coupled single molecule-metal junction device
A new mechanism is proposed to explain the origin of negative differential resistance (NDR) in a strongly coupled single molecule-metal junction. A first-principles quantum transport calculation in a Fe-terpyridine linker molecule sandwiched between a pair of gold electrodes is presented. Upon increasing applied bias, ...
0803.3342v1
2008-04-13
Conductance of p-n-p graphene structures with 'air-bridge' top gates
We have fabricated graphene devices with a top gate separated from the graphene layer by an air gap--a design which does not decrease the mobility of charge carriers under the gate. This gate is used to realise p-n-p structures where the conducting properties of chiral carriers are studied. The band profile of the stru...
0804.2081v3
2008-06-16
Metal-insulator transition and giant anisotropic magnetoresistance in ultra thin (Ga,Mn)As
MBE-grown, 5 nm-thick annealed Ga0.95Mn0.05As films with Tc~90K demonstrate transition from metallic to insulating state below To~10K, where sheet resistances Rsh~h/e2 and both longitudinal Rxx and transverse Rxy components become comparable. Below metal-insulator transition we found giant anisotropic magnetoresistance...
0806.2590v1
2008-06-28
Theory of spin magnetohydrodynamics
We develop a phenomenological hydrodynamic theory of coherent magnetic precession coupled to electric currents. Exchange interaction between electron spin and collective magnetic texture produces two reciprocal effects: spin-transfer torque on the magnetic order parameter and the Berry-phase gauge field experienced by ...
0806.4656v2
2008-07-28
Transport anomalies across the quantum limit in semimetallic Bi$_{0.96}$Sb$_{0.04}$
We report on a study of electronic transport in semi-metallic Bi$_{0.96}$Sb$_{0.04}$. At zero field, the system is a very dilute Fermi liquid displaying a T$^{2}$ resistivity with an enhanced prefactor. Quantum oscillations in resistivity as well as in Hall, Nernst and Seebeck responses of the system are detectable and...
0807.4432v1
2008-07-30
Ultra-Thin Silver Films obtained by Sequential Quench-Anneal Processing
We have used the two-step growth technique, quench condensing followed by an anneal, to grow ultra thin films of silver on glass substrates. As has been seen with semiconductor substrates this process produces a metastable homogeneous covering of silver. By measuring the in situ resistance of the film during growth we ...
0807.4948v1
2008-08-09
Electronic transport and specific heat of 1T- VSe2
The results of low temperature thermoelectric power and the specific heat of 1T-VSe2 (Vanadium diselenide) have been reported along with the electrical resistivity, and Hall coefficient of the compound. The Charge Density Wave (CDW) transition is observed near 110K temperature in all these properties. The Thermoelectri...
0808.1332v2
2008-08-11
Non-trivial length dependence of the conductance and negative differential resistance in atomic molecular wires
We study the electronic and transport properties of two novel molecular wires made of atomic chains of carbon atoms (polyynes) capped with either, benzene-thiols or pyridines. While both molecules are structurally similar, the electrical conductance of benzene-thiol-capped chains attached to gold electrodes is found to...
0808.1494v2
2008-08-21
Electrons and holes in Si quantum well: a room-temperature transport and drag resistance study
We investigate carrier transport in a single 22 nm-thick double-gated Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage window. When the gate voltage asymmetry is not too large only either electrons or hol...
0808.2914v1
2008-10-27
Abrupt Emergence of Pressure-Induced Superconductivity of 34 K in SrFe2As2: A Resistivity Study under Pressure
We report resistivity measurement under pressure in single crystals of SrFe_2As_2, which is one of the parent materials of Fe-based superconductors. The structural and antiferromagnetic (AFM) transition of T_0 = 198 K at ambient pressure is suppressed under pressure, and the ordered phase disappears above P_c ~ 3.6-3.7...
0810.4856v2
2008-12-11
Difference of Oxide Hetero-Structure Junctions with Semiconductor Electronic Devices
Charge carrier injection performed in Pr0.7Ca0.3MnO3 (PCMO) hetero-structure junctions exhibits stable without electric fields and dramatic changes in both resistances and interface barriers, which are entirely different from behaviors of semiconductor devices. Disappearance and reversion of interface barriers suggest ...
0812.2071v1
2008-12-11
Evidence for Coexistence of Superconductivity and Magnetism in Single Crystals of Co-doped SrFe$_2$As$_2$
In order to investigate whether magnetism and superconductivity coexist in Co-doped SrFe$_2$As$_2$, we have prepared single crystals of SrFe$_{2-x}$Co$_x$As$_2$, $x$ = 0 and 0.4, and characterized them via X-ray diffraction, electrical resistivity in zero and applied field up to 9 T as well as at ambient and applied pr...
0812.2091v1
2009-01-10
Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing
We report the formation of sub-5 nm ultrashallow junctions in 4 inch Si wafers enabled by the molecular monolayer doping of phosphorous and boron atoms and the use of conventional spike annealing. The junctions are characterized by secondary ion mass spectrometry and non-contact sheet resistance measurements. It is fou...
0901.1396v1