publicationDate
stringlengths
10
10
title
stringlengths
17
233
abstract
stringlengths
20
3.22k
id
stringlengths
9
12
2015-01-13
Phase-change memory function of correlated electrons in organic conductors
Phase-change memory (PCM), a promising candidate for next-generation non-volatile memories, exploits quenched glassy and thermodynamically stable crystalline states as reversibly switchable state variables. We demonstrate PCM functions emerging from a charge-configuration degree of freedom in strongly correlated electr...
1501.02873v2
2015-01-15
Optimizing the Optical and Electrical Properties of Graphene Ink Thin Films by Laser-annealing
We demonstrate a facile fabrication technique for graphene-based transparent conductive films. Highly flat and uniform graphene films are obtained through the incorporation of an efficient laser annealing technique with one-time drop casting of high-concentration graphene ink. The resulting thin films are uniform and e...
1501.03843v1
2015-02-18
The Role of Transport Agents in MoS2 Single Crystals
We report resistivity, thermoelectric power and thermal conductivity of MoS2 single crystals prepared by chemical vapour transport (CVT) method using I2, Br2 and TeCl4 as transport agents. The material presents low-lying donor and acceptor levels, which dominate the in-plane charge transport. Intercalates into the Van ...
1502.05161v1
2015-08-20
Transport Conductivity of Graphene at RF and Microwave Frequencies
We measure graphene coplanar waveguides from direct current (DC) to 13.5GHz and show that the apparent resistance (in the presence of parasitic impedances) has an quadratic frequency dependence, but the intrinsic conductivity (without the influence of parasitic impedances) is frequency-independent. Consequently, in our...
1508.04984v1
2016-08-17
Nanocomposite si-c-n coatings
Coatings of ternary nanocomposite Si-C-N ceramic coatings have shown newer and improved mechanical and functional properties over the coarser and monolithic coatings. Properties like high hardness, wear resistance, oxidation resistance, tunable band gap and chemical inertness have been observed for Si-C-N which makes i...
1608.05667v1
2016-12-21
Correlation between battery material performance and cooperative electron-phonon interaction in LiCo$_y$Mn$_{2-y}$O$_{4}$
Understanding the basic physics related to archetypal lithium battery material (such as LiCo$_y$Mn$_{2-y}$O$_{4}$) is of considerable interest and is expected to aid designing of cathodes of high capacity. The relation between electrochemical performance, activated-transport parameters, thermal expansion, and cooperati...
1612.07092v1
2018-05-07
High-temperature thermoelectric properties of half-Heusler phases Er$_{1-x}$Ho$_x$NiSb
Polycrystalline samples of Er$_{1-x}$Ho$_x$NiSb ($x$ = 0, 0.2, 0.3, 0.5, 0.7, 0.8, 1) were characterized by means of x-ray powder diffraction (XRD), scanning electron microscopy (SEM), and optical metallography. The results proved the formation of half-Heusler alloys in the entire composition range. Their electrical tr...
1805.02435v1
2018-05-16
Magnetic properties of single crystalline itinerant ferromagnet AlFe2B2
Single crystals of AlFe$_{2}$B$_{2}$ have been grown using the self flux growth method and then measured the structural properties, temperature and field dependent magnetization, and temperature dependent electrical resistivity at ambient as well as high pressure. The Curie temperature of AlFe$_{2}$B$_{2}$ is determine...
1805.06373v1
2019-09-29
Structural and electrical properties of ceramic Li-ion conductors based on Li$_{1.3}$Al$_{0.3}$Ti$_{1.7}$(PO$_4$)$_3$-LiF
The work presents the investigations of Li1.3Al0.3Ti1.7(PO4)3-xLiF Li-ion conducting ceramics with 0 < x < 0.3 by means of X-ray diffractometry (XRD), 7Li, 19F, 27Al and 31P Magic Angle Spinning Nuclear Magnetic Resonance (MAS NMR) spectroscopy, thermogravimetry (TG), scanning electron microscopy (SEM), impedance spect...
1909.13291v2
2017-03-19
A thermodynamic analysis of the spider silk and the importance of complexity
The spider silk is one of the most interesting bio-materials investigated in the last years. One of the main reasons that brought scientists to study this organized system is its high level of resistance if compared to other artificial materials characterized by higher density. Subsequently, researchers discovered that...
1703.06497v1
2019-07-31
Large spin Hall magnetoresistance in antiferromagnetic α-Fe2O3/Pt heterostructures
We investigate the spin Hall magnetoresistance (SMR) at room temperature in thin film heterostructures of antiferromagnetic, insulating, (0001)-oriented alpha-Fe2O3 (hematite) and Pt. We measure their longitudinal and transverse resistivities while rotating an applied magnetic field of up to 17T in three orthogonal pla...
1907.13393v4
2020-09-16
Properties and influence of microstructure and crystal defects in Fe$_2$VAl modified by laser surface remelting
Laser surface remelting can be used to manipulate the microstructure of cast material. Here, we present a detailed analysis of the microstructure of Fe$_2$VAl following laser surface remelting. Within the melt pool, elongated grains grow nearly epitaxially from the heat-affected zone. These grains are separated by low-...
2009.07685v2
2016-03-18
Electronic Structure, Phase Stability and Resistivity of Hybrid Hexagonal C$_x$(BN)$_{1-x}$ Two-dimensional Nanomaterial: A First-principles Study
We use density functional theory based first-principles method to investigate the bandstructure and phase stability in the laterally grown hexagonal C$_x$(BN)$_{1-x}$, two-dimensional Graphene and $h$-BN hybrid nanomaterials, which were synthesized by experimental groups recently (Liu $et al$, Nature Nanotech, 8, 119 (...
1603.05780v1
2017-08-25
Ballistic geometric resistance resonances in a single surface of a topological insulator
Transport in topological matter has shown a variety of novel phenomena over the last decade. Although numerous transport studies have been conducted on three-dimensional topological insulators (3D-TIs), study of ballistic motion and thus exploration of potential landscapes on a hundred nanometer scale is for the preval...
1708.07766v1
2018-08-22
Evidence for Undoped Weyl Semimetal Charge Transport in $Y_{2}Ir_{2}O_{7}$
Weyl fermions scattering from a random Coulomb potential are predicted to exhibit resistivity versus temperature $\rho \space \alpha \space T^{-4}$ in a single particle model. Here we show that, in closed environment-grown polycrystalline samples of $Y_{2}Ir_{2}O_{7}$, $\rho = \rho_{0} T^{-4}$ over four orders of magni...
1808.07583v4
2019-04-07
Restoration of long range order of Na ions in $Na_xCoO_2$ at high temperatures by sodium site doping
We have systematically investigated the $Na_xCoO_2$ system doped with Cu, Y, Sn, W, Au and Bi for $x$ = 0:5; 0:75 and 1.00 using density functional theory. Sn, W, and Bi always substitute a Co while Au always substitutes a Na regardless of Na concentration. However, for Cu and Y, the substitution site depends on Na con...
1904.03644v1
2019-08-07
Fast response of pulsed laser deposited Zinc ferrite thin film as a chemo-resistive gas sensor
Thin films of ZnFe2O4 deposited by pulsed laser technique are here demonstrated as one of the interesting materials for sensing of ethanol. The response transients were fitted well to one-site Langmuir adsorption model. Activation energies for (I) adsorption and reaction of ethanol and (II) desorption (i.e. recovery pr...
1908.02780v1
2012-06-18
GdN Nanoisland-Based GaN Tunnel Junctions
We show that GdN nanoislands can enhance inter-band tunneling in GaN PN junctions by several orders of magnitude, enabling low optical absorption low-resistance tunnel junctions (specific resistivity 1.3 X 10-3 {\Omega}-cm2) for various optoelectronic applications. We exploit the ability to overgrow high quality GaN ov...
1206.3810v3
2015-07-01
Itinerant Antiferromagnetism in FeMnP0.8Si0.2 Single Crystals
Compounds based on the Fe2P structure have continued to attract interest because of the interplay between itinerant and localized magnetism in a non-centrosymmetric crystal structure, and because of the recent developments of these materials for magnetocaloric applications. Here we report the growth and characterizatio...
1507.00275v1
2019-01-22
S-type Negative Differential Resistance in Semiconducting Transition-Metal Dichalcogenides
Current-controlled (also known as "S-type") negative differential resistance (NDR) is of crucial importance to many emerging applications including neuromorphic computing and high-density memristors integration. However, the experimental realization of S-type NDR based on conventional mechanisms poses demanding require...
1901.07161v1
2020-12-30
High Current Density in Monolayer MoS$_2$ Doped by AlO$_x$
Semiconductors require stable doping for applications in transistors, optoelectronics, and thermoelectrics. However, this has been challenging for two-dimensional (2D) materials, where existing approaches are either incompatible with conventional semiconductor processing or introduce time-dependent, hysteretic behavior...
2012.15350v1
2021-06-09
Maximizing Spin-Orbit Torque Generated by the Spin Hall Effect of Pt
Efficient generation of spin-orbit torques (SOTs) is central for the exciting field of spin-orbitronics. Platinum, the archetypal spin Hall material, has the potential to be an outstanding provider for spin-orbit torques due to its giant spin Hall conductivity, low resistivity, high stabilities, and the ability to be c...
2106.04992v2
2021-08-12
Revisiting the Reduction of Thermal Conductivity in Nano- to Micro-Grained Bismuth Telluride: The Importance of Grain-Boundary Thermal Resistance
Nanograined bulk alloys based on bismuth telluride (Bi2Te3) are the dominant materials for room-temperature thermoelectric applications. In numerous studies, existing bulk phonon mean free path (MFP) spectra predicted by atomistic simulations suggest sub-100 nm grain sizes are necessary to reduce the lattice thermal co...
2108.05972v1
2022-12-02
Electric modulation of the Fermi arc spin transport via three-terminal configuration in the topological semimetal nanowires
Spin momentum locking is a key feature of the topological surface state, which plays an important role in spintronics. The electrical detection of current-induced spin polarization protected by the spin momentum locking in non-magnetic systems provides a new platform for developing spintronics while previous studies we...
2212.01072v1
2023-08-02
Observation of zero resistance above 100$^\circ$ K in Pb$_{10-x}$Cu$_x$(PO$_4$)$_6$O
Room-temperature superconductivity has always been regarded as the ultimate goal in the fields of solid-state physics and materials science, with its realization holding revolutionary significance, capable of triggering significant changes in energy transmission and storage. However, achieving it poses various challeng...
2308.01192v1
2024-04-13
Solution-Processed Inks with Fillers of NbS$_3$ Quasi-One-Dimensional Charge-Density-Wave Material
We report on the solution processing and testing of electronic ink comprised of quasi-one-dimensional NbS$_3$ charge-density-wave fillers. The ink was prepared by liquid-phase exfoliation of NbS$_3$ crystals into high-aspect ratio quasi-1D fillers dispersed in a mixture of isopropyl alcohol and ethylene glycol solution...
2404.09038v1
2024-02-16
Cycling on rough roads: A model for resistance and vibration
Minimising opposing forces is a matter of interest to most cyclists. These forces arise from passage through air ("drag") and interaction with the road surface ("resistance"). Recent work recognises that resistance forces arise not only from the deformation of the tyre ("rolling resistance") but also from irregularitie...
2405.00019v1
2015-05-11
Pressure-induced semimetal to superconductor transition in a three-dimensional topological material ZrTe5
As a new type of topological materials, ZrTe5 shows many exotic properties under extreme conditions. Utilizing resistance and ac magnetic susceptibility measurements under high pressure, while the resistance anomaly near 128 K is completely suppressed at 6.2 GPa, a fully superconducting transition emerges surprisingly....
1505.02658v2
2015-08-05
Screening and transport in 2D semiconductor systems at low temperatures
Low temperature carrier transport properties in two-dimensional (2D) semiconductor systems can be theoretically well-understood within a mean-field type RPA-Boltzmann theory as being limited by scattering from screened Coulomb disorder arising from random quenched charged impurities in the environment. In the current w...
1508.01195v1
2007-07-04
Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory
Transition-metal oxides exhibiting a bistable resistance state are attractive for non-volatile memory applications. The relevance of oxygen vacancies (VO) for the resistance-change memory was investigated with x-ray fluorescence, infrared microscopy, and x-ray absorption spectroscopy using Cr-doped SrTiO3 as example. W...
0707.0563v1
2012-12-17
Measurement of specific contact resistivity using scanning voltage probes
Specific contact resistivity measurements have conventionally been heavy in both fabrication and simulation/calculation in order to account for complicated geometries and other effects such as parasitic resistance. We propose a simpler geometry to deliver current, and the use of a scanning voltage probe to sense the po...
1212.4182v2
2013-11-04
Surface resistivity of hydrogenated amorphous carbon films: Existence of intrinsic graphene on its surface
Surface resistivity of hydrogenated amorphous carbon films was measured as a function of the applied electrical field. The measured dependence shows a sharp ambipolar peak near zero gate voltage. Furthermore, we found that in some samples sheet resistance at the peak is as low as 7.5 k{\Omega}/sq. This value is the sam...
1311.0605v2
2014-06-17
High-Performance MoS2 Field-Effect Transistors Enabled by Chloride Doping: Record Low Contact Resistance (0.5 kohm*um) and Record High Drain Current (460 uA/um)
In this paper, we report a novel chemical doping technique to reduce the contact resistance (Rc) of transition metal dichalcogenides (TMDs) - eliminating two major roadblocks (namely, doping and high Rc) towards demonstration of high-performance TMDs field-effect transistors (FETs). By using 1,2 dichloroethane (DCE) as...
1406.4492v1
2015-04-14
Thermal boundary resistance at Si/Ge interfaces determined by approach-to-equilibrium molecular dynamics simulations
The thermal boundary resistance of Si/Ge interfaces as been determined using approach-to-equilibrium molecular dynamics simulations. Assuming a reciprocal linear dependence of the thermal boundary resistance, a length-independent bulk thermal boundary resistance could be extracted from the calculation resulting in a va...
1504.03613v1
2019-06-12
Kapitza resistance in basic chain models with isolated defects
Kapitza thermal resistance is a common feature of material interfaces. It is defined as the ratio of the thermal drop at the interface to the heat flux flowing across the interface. One expects that this resistance will depend on the structure of the interface and on the temperature. We address the heat conduction in o...
1906.05152v1
2022-09-22
Computational Design of Corrosion-resistant and Wear-resistant Titanium Alloys for Orthopedic Implants
Titanium alloys are promising candidates for orthopedic implants due to their mechanical resilience and biocompatibility. Current titanium alloys in orthopedic implants still suffer from low wear and corrosion resistance. Here, we present a computational method for optimizing the composition of titanium alloys for enha...
2210.00845v1
2021-08-17
Superconducting-like and magnetic transitions in oxygen-implanted diamond-like and amorphous carbon films, and in highly oriented pyrolytic graphite
In our previously published work, we have reported colossal magnetoresistance, Andreev oscillations, ferromagnetism, and granular superconductivity in oxygen-implanted carbon fibers, graphite foils, and highly oriented pyrolytic graphite. In this follow-up research, more results on these oxygen-implanted graphite sampl...
2108.07417v1
2019-11-20
Aspects of the Normal State Resistivity of Cuprate Superconductors
Planar normal state resistivity data taken from three families of cuprate superconductors are compared with theoretical calculations from the recent extremely correlated Fermi liquid theory (ECFL). The two hole doped cuprate materials $LSCO$ and $BSLCO$ and the electron doped material $LCCO$ have yielded rich data sets...
1911.09119v3
2005-10-20
Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering
We investigated dependence of tunnel magnetoresistance effect in CoFeB/MgO/CoFeB magnetic tunnel junctions on Ar pressure during MgO-barrier sputtering. Sputter deposition of MgO-barrier at high Ar pressure of 10 mTorr resulted in smooth surface and highly (001) oriented MgO. Using this MgO as a tunnel barrier, tunnel ...
0510531v1
2014-09-23
Fabrication of Flexible Super Capacitor Using Laser Lightscribe Technique
Super capacitors are promising energy storage devices due to their capability of delivering high peak current and storing high amount of energy in a short time with very low internal power loss. We fabricated the graphene or graphite oxide super-capacitor using laser Lightscribe technique. We prepared graphite oxide by...
1409.6396v1
2019-09-20
Extraordinary high room-temperature carrier mobility in graphene-WSe$_2$ heterostructures
High carrier mobilities play a fundamental role for high-frequency electronics, integrated optoelectronics as well as for sensor and spintronic applications, where device performance is directly linked to the magnitude of the carrier mobility. Van der Waals heterostructures formed by graphene and hexagonal boron nitrid...
1909.09523v1
2015-06-29
High quality monolayer graphene synthesized by resistive heating cold wall chemical vapour deposition
Emerging flexible and wearable technologies such as healthcare electronics and energy-harvest devices could be transformed by the unique properties of graphene. The vision for a graphene-driven industrial revolution is motivating intensive research on the synthesis of (1) high quality and (2) low cost graphene. Hot-wal...
1506.08569v1
2015-09-29
A Nonlinear HP-Type Complementary Resistive Switch
Resistive Switching (RS) is the change in resistance of a dielectric under the influence of an external current or electric field. This change is non-volatile, and the basis of both the memristor and resistive random access memory. In the latter, high integration densities favor the anti-serial combination of two RS-el...
1509.08885v1
2003-08-14
Resistivity Ratio of Niobium Superconducting Cavities
Resistivity measurements have been made on Nb cavities, as well as on Pb and Cu, at 296, 77, and 4.2 K by means of a contactless induced-current method. For superconductors, a constant magnetic field drives the material normal below the transition temperature. These measurements provide a simple means for initial mater...
0308266v1
2014-01-09
Rapid Embedded Wire Heating via Resistive Guiding of Laser-Generated Fast Electrons as a Hydrodynamic Driver
Resistively guiding laser-generated fast electron beams in targets consisting of a resistive wire embedded in lower $Z$ material should allow one to rapidly heat the wire to over 100eV over a substantial distance without strongly heating the surrounding material. On the multi-ps timescale this can drive hydrodynamic mo...
1401.1998v1
2002-07-19
Spin Injection: Interface Resistance in Fe/Semiconductor Junctions Calculated from First Principles
We calculate the current spin polarisation and the interface resistance of Fe/GaAs and Fe/ZnSe (001) spin injection junctions from first principles, including also the possibility of a Schottky barrier. From our results of interface resistance we estimate the barrier thickness needed for efficient spin injection if the...
0207492v1
2007-08-01
Resistance noise in Bi_2Sr_2CaCu_2O$_{8+δ}$
The resistance noise in a Bi_2Sr_2CaCu_2O$_{8+\delta}$ thin film is found to increase strongly in the underdoped regime. While the increase of the raw resistance noise with decreasing temperature appears to roughly track the previously reported pseudogap temperature for this material, standard noise analysis rather sug...
0708.0117v1
2010-06-14
A conjecture of Biggs concerning the resistance of a distance-regular graph
Previously, Biggs has conjectured that the resistance between any two points on a distance-regular graph of valency greater than 2 is bounded by twice the resistance between adjacent points. We prove this conjecture, give the sharp constant for the inequality, and display the graphs for which the conjecture most nearly...
1006.2687v1
2019-06-13
Comment on arXiv:1807.08572, "Coexistence of Diamagnetism and Vanishingly Small Electrical Resistance at Ambient Temperature and Pressure in Nanostructures"
A recent preprint arXiv:1807.08572 reported the observation of a transition in Ag/Au nanoparticle composites near room temperature and at ambient pressure, to a vanishingly small four-probe resistance, which was tentatively identified as a percolating superconducting transition. In this brief comment, I point out that ...
1906.05742v1
2017-08-18
A New Method for Characterizing Bulk and Surface Conductivities of Three-Dimensional Topological Insulators: Inverted Resistance Measurements
We introduce a new resistance measurement method that is useful in characterizing materials with both surface and bulk conduction, such as three-dimensional topological insulators. The transport geometry for this new resistance measurement configuration consists of one current lead as a closed loop that fully encloses ...
1708.05762v2
2007-11-02
Effects of carbon nanotubes on grain boundary sliding in zirconia polycrystals
Mechanical properties of zirconia polycrystals decrease drastically at high temperature due to thermally activated grain boundary (GB) sliding, leading to plastic or even super-plastic deformation. As GB sliding is a source of energy dissipation in the material, mechanical loss measurements are well suited to study suc...
0711.0381v1
2010-01-25
High-pressure synthesis, crystal and electronic structures of a new scandium tungstate, Sc0.67WO4
Negative thermal expansion (NTE) materials possess a low-density, open structure which can respond to high pressure conditions, leading to new compounds and/or different physical properties. Here we report that one such NTE material -- white, insulating, orthorhombic Sc2W3O12 -- transforms into a black compound when tr...
1001.4561v1
2016-10-18
Low Temperature Thermoelectric Properties of Co- and Cr- doped CuAgSe
High mobility phonon-glass semimetal $CuAgSe$ has shown promise in recent years as a potential low-temperature thermoelectric material. It exhibits reasonably strong thermoelectric performance as well as an extremely high carrier mobility, both of which are enhanced when the material is doped with Ni at the Cu sites. T...
1610.05634v1
2018-03-14
Ultra High Molecular Weight Polyethylene: optical features at millimeter wavelengths
The next generation of experiments for the measurement of the Cosmic Microwave Background (CMB) requires more and more the use of advanced materials, with specific physical and structural properties. An example is the material used for receiver's cryostat windows and internal lenses. The large throughput of current CMB...
1803.05228v1
2019-08-02
Machine-learning-assisted thin-film growth: Bayesian optimization in molecular beam epitaxy of SrRuO3 thin films
Materials informatics exploiting machine learning techniques, e.g., Bayesian optimization (BO), has the potential to offer high-throughput optimization of thin-film growth conditions through incremental updates of machine learning models in accordance with newly measured data. Here, we demonstrated BO-based molecular b...
1908.00739v1
2002-04-08
Pressure Effect on the Superconducting and Magnetic Transitions of the Superconducting Ferromagnet RuSr2GdCu2O8
The superconducting ferromagnet RuSr2GdCu2O8 was investigated at high pressure. The intra-grain superconducting transition temperature, Tc, is resolved in ac-susceptibility as well as resistivity measurements. It is shown that the pressure shift of Tc is much smaller than that of other high-Tc compounds in a similar do...
0204185v1
2004-09-23
Superconducting and Normal State Properties of Heavily Hole-Doped Diamond
We report measurements of the specific heat, Hall effect, upper critical field and resistivity on bulk, B-doped diamond prepared by reacting amorphous B and graphite under high-pressure/high-temperature conditions. These experiments establish unambiguous evidence for bulk superconductivity and provide a consistent set ...
0409624v1
2000-04-10
Systematic evolution of the magnetotransport properties of Bi_{2}Sr_{2-x}La_{x}CuO_{6} in a wide doping range
Recently we have succeeded in growing a series of high-quality Bi_{2}Sr_{2-x}La_{x}CuO_{6} crystals in a wide range of carrier concentrations. The data of \rho_{ab}(T) and R_H(T) of those crystals show behaviors that are considered to be "canonical" to the cuprates. The optimum zero-resistance T_c has been raised to as...
0004134v1
2005-07-20
Superconductivity in Polycrystalline Diamond Thin Films
Superconductivity was discovered in heavily boron-doped diamond thin films deposited by the microwave plasma assisted chemical vapor deposition (MPCVD) method. Advantages of the MPCVD deposited diamond are the controllability of boron concentration in a wide range, and a high boron concentration, especially in (111) or...
0507476v2
2006-11-15
Silicon detectors: damage, modelling and expected long-time behaviour in physics experiments at ultra high energy
In this contribution, the structural modifications of the material and the degradation of devices is modelled and compared with experimental data for more resistivities, temperatures, crystal orientations and oxygen concentrations, considering the existence of the new primary fourfold coordinated defect, besides the va...
0611142v1
2008-01-07
High pressure-high temperature phase diagram of ammonia
The high pressure(P)-high temperature(T) phase diagram of solid ammonia has been investigated using diamond anvil cell and resistive heating techniques. The III-IV transition line has been determined up to 20 GPa and 500 K both on compression and decompression paths. No discontinuity is observed at the expected locatio...
0801.0913v1
2008-07-16
High-Temperature Superconductivity in Eu0.5K0.5Fe2As2
Subsequent to our recent report of SDW type transition at 190 K and antiferromagnetic order below 20 K in EuFe2As2, we have studied the effect of K-doping on the SDW transition at high temperature and AF order at low temperature. 50% K doping suppresses the SDW transition and in turn gives rise to high-temperature supe...
0807.2530v2
2017-09-08
Room temperature ferromagnetism in transparent and conducting Mn-doped $SnO_{2}$ thin films
The magnetization as a function of magnetic field showed hysteretic behavior at room temperature. According to the temperature dependence of the magnetization, the Curie temperature $(T_{C})$ is higher than 350 K. Ferromagnetic Mn-doped tin oxide thin films exhibited low electrical resistivity and high optical transmit...
1709.05930v1
2020-11-18
The CLICTD Monolithic CMOS Sensor
CLICTD is a monolithic silicon pixel sensor fabricated in a modified 180 nm CMOS imaging process with a small collection electrode design and a high-resistivity epitaxial layer. It features an innovative sub-pixel segmentation scheme and is optimised for fast charge collection and high spatial resolution. The sensor wa...
2011.09389v1
2023-11-28
A Brief Review and Perspective on the Functional Biodegradable Films for Food Packaging
High-performance, environmentally-friendly biodegradable packaging as substitutes for conventional plastics becomes severe demand to nowadays economy and society. As an aliphatic aromatic copolyester PBAT is recognized as the preferred alternative to traditional plastics. However, the relatively high cost and weak prop...
2311.16932v1
2023-05-18
Indium-Tin-Oxide for High-performance Electro-optic Modulation
Advances in opto-electronics are often led by discovery and development of materials featuring unique properties. Recently the material class of transparent conductive oxides (TCO) has attracted attention for active photonic devices on-chip. In particular Indium Tin Oxide (ITO) is found to have refractive index changes...
2305.10639v1
2024-03-14
Magnetotransport properties in van-der-Waals \textit{\textbf{R}}Te$_{3}$ (\textit{\textbf{R}} = La, Ce, Tb)
Rare-earth tritellurides are van-der-Waals antiferromagnets which have been attracting attention as materials not only with high mobility, but also with various states such as superconductivity under high pressure, incommensurate charge-density-wave (CDW) phase, and multiple antiferromagnetic phases. In this work, we p...
2403.09250v2
2016-02-19
Magnetic effects in sulfur-decorated graphene
The interaction between two different materials can present novel phenomena that are quite different from the physical properties observed when each material stands alone. Strong electronic correlations, such as magnetism and superconductivity, can be produced as the result of enhanced Coulomb interactions between elec...
1602.06214v2
2020-09-27
Non-equilibrium Effects in Dissipative Strongly Correlated Systems
Novel physics arises when strongly correlated system is driven out of equilibrium by external fields. Dramatic changes in physical properties, such as conductivity, are empirically observed in strongly correlated materials under high electric field. In particular, electric-field driven metal-insulator transitions are w...
2009.12865v1
2020-09-28
A hybrid optoelectronic Mott insulator
The coupling of electronic degrees of freedom in materials to create hybridized functionalities is a holy grail of modern condensed matter physics that may produce novel mechanisms of control. Correlated electron systems often exhibit coupled degrees of freedom with a high degree of tunability which sometimes lead to h...
2009.13606v1
2020-01-02
Thermal Conductivity Measurements in Nanosheets via Bolometric Effect
Thermal conductivity measurement techniques for materials with nanoscale dimensions require fabrication of very complicated devices or their applicability is limited to a class of materials. Discovery of new methods with high thermal sensitivity are required for the widespread use of thermal conductivity measurements i...
2001.00368v1
2020-11-01
Bipolar Magnetic Semiconducting Behavior in VNbRuAl: A New Spintronic Material for Spin Filters
We report the theoretical prediction of a new class of spintronic materials, namely bipolar magnetic semiconductor (BMS), which is also supported by our experimental data. BMS acquires a unique band structure with unequal band gaps for spin up and down channels, and thus are useful for tunable spin transport based appl...
2011.00533v1
2021-10-26
Wet Scandium Etching for hard mask formation on a silicon substrate
Nowadays, microelectronics and nanoelectronics require the search for new materials, including masks for creating structures. Today, the intermediate hard mask strategy is one of the key issues in achieving a good balance between lithography and etching at the microelectronic fabrication. One of the interesting challen...
2110.13639v3
2007-01-03
Two-dimensional Vortices in Superconductors
Superconductors have two key characteristics. They expel magnetic field and they conduct electrical current with zero resistance. However, both properties are compromised in high magnetic fields which can penetrate the material and create a mixed state of quantized vortices. The vortices move in response to an electric...
0701059v1
2007-11-01
Point-contact search for antiferromagnetic giant magnetoresistance
We report the first measurements of effects of large current densities on current-perpendicular-to-plane magnetoresistance (MR) of magnetic multilayers containing two antiferromagnetic layers separated by a non-magnetic layer. These measurements were intended to search for a recently predicted antiferromagnetic giant m...
0711.0059v3
2008-06-18
Linear-T resistivity and change in Fermi surface at the pseudogap critical point of a high-Tc superconductor
A fundamental question of high-temperature superconductors is the nature of the pseudogap phase which lies between the Mott insulator at zero doping and the Fermi liquid at high doping p. Here we report on the behaviour of charge carriers near the zero-temperature onset of that phase, namely at the critical doping p* w...
0806.2881v2
2016-06-07
Spin-Orbit Interaction and Kondo Scattering at the PrAlO$_3$/SrTiO$_3$ Interface: Effects of Oxygen Content
We report the effect of oxygen pressure during growth ($P_{O_{2}}$) on the electronic and magnetic properties of PrAlO$_3$ films grown on $\rm TiO_{2}$-terminated SrTiO$_3$ substrates. Resistivity measurements show an increase in the sheet resistance as $P_{O_{2}}$ is increased. The temperature dependence of the sheet ...
1606.02308v1
2016-07-20
Magnetotransport properties of the type II Weyl semimetal candidate Ta3S2
We have investigated the magnetoresistance (MR) and Hall resistivity properties of the single crystals of tantalum sulfide, Ta3S2, which was recently predicted to be a new type II Weyl semimetal. Large MR (up to ~8000% at 2 K and 16 T), field-induced metal-insulator-like transition and nonlinear Hall resistivity are ob...
1607.05798v2
2017-10-25
Device model for pixelless infrared image up-converters based on polycrystalline graphene heterostructures
We develop a device model for pixelless converters of far/mid-infrared radiation (FIR/MIR) images into near-infrared/visible (NIR/VIR) images. These converters use polycrystalline graphene layers (PGLs) immersed in the van der Waals (vdW) materials integrated with light emitting diode (LED). The PGL serves as an elemen...
1710.09060v1
2018-06-18
Electroluminescence on-off ratio control of n-i-n GaAs/AlGaAs-based resonant tunneling structures
We explore the nature of the electroluminescence (EL) emission of purely n-doped GaAs/AlGaAs resonant tunneling diodes (RTDs) and the EL evolution with voltage. A singular feature of such a device is unveiled when the electrical output current changes from high to low and the EL on-off ratio is enhanced by 2 orders of ...
1806.06757v1
2012-01-19
Magnetic Field Effects on Transport Properties of PtSn4
The anisotropic physical properties of single crystals of orthorhombic PtSn4 are reported for magnetic fields up to 140 kOe, applied parallel and perpendicular to the crystallographic b-axis. The magnetic susceptibility has an approximately temperature independent behavior and reveals an anisotropy between ac-plane and...
1201.4091v1
2020-10-23
Air-stable, earth-abundant molten chlorides and corrosion-resistant containment for chemically-robust, high-temperature thermal energy storage for concentrated solar power
A dramatic reduction in man-made CO2 emissions could be achieved if the cost of electricity generated from concentrated solar power (CSP) plants could become competitive with fossil-fuel-derived electricity. The solar heat-to-electricity conversion efficiency of CSP plants may be significantly increased (and the associ...
2010.12476v1
2023-03-03
Anomalous Random Telegraphy Signal in Suspended Graphene with Oxygen Adsorption
Graphene is a promising material for sensing applications because of its large specific surface area and low noise. In many applications, graphene will inevitably be in contact with oxygen since it is the second most abundant gas in the atmosphere. Therefore, it is of interest to understand how this gas affects the sen...
2303.01649v2
2007-09-12
Characterization of Thermal Interface Materials to Support Thermal Simulation
In this paper new characterization equipment for thermal interface materials is presented. Thermal management of electronic products relies on the effec-tive dissipation of heat. This can be achieved by the optimization of the system design with the help of simulation methods. The precision of these models relies also ...
0709.1849v1
2016-02-29
A Solid-State Dielectric Elastomer Switch for Soft Logic
In this paper we describe a stretchable solid-state electronic switching material that operates at high voltage potentials, as well as a switch material benchmarking technique that utilizes a modular dielectric elastomer (artificial muscle) ring oscillator. The solid-state switching material was integrated into our osc...
1602.08988v1
2019-03-15
An efficient phase-field model for fatigue fracture in ductile materials
Fatigue fracture in ductile materials, e. g. metals, is caused by cyclic plasticity. Especially regarding the high numbers of load cycles, plastic material models resolving the full loading path are computationally very demanding. Herein, a model with particularly small computational effort is presented. It provides a ...
1903.06465v3
2021-10-21
Structures and physical properties of V-based kagome metals CsV$_{6}$Sb$_{6}$ and CsV$_{8}$Sb$_{12}$
We report two new members of V-based kagome metals CsV$_{6}$Sb$_{6}$ and CsV$_{8}$Sb$_{12}$. The most striking structural feature of CsV$_{6}$Sb$_{6}$ is the V kagome bilayers. For CsV$_{8}$Sb$_{12}$, there is an intergrowth of two-dimensional V kagome layers and one-dimensional V chains and the latter lead to the orth...
2110.11452v2
2022-05-17
The Highly Disordered Zintl Phase Ca$_{10}$GdCdSb$_9$ -- New Example of a p-type Semiconductor with Remarkable Thermoelectric Properties
Ca$_{10}$GdCdSb$_9$ is a new Zintl phase with a large unit cell volume (~2500 {\AA}3) and a very complex, disordered structure, which can drive the realization of ultralow thermal conductivity in this material. The measured Seebeck coefficient, $\alpha$, for single-crystalline Ca$_{10}$GdCdSb$_9$ approaches 350 $\mu$V/...
2205.08559v1
2022-10-12
Experimental data management platform for data-driven investigation of combinatorial alloy thin films
Experimental materials data are heterogeneous and include a variety of metadata for processing and characterization conditions, making the implementation of data-driven approaches for developing novel materials difficult. In this paper, we introduce the Thin-Film Alloy Database (TFADB), a materials data management plat...
2210.06027v1
2022-10-18
Reaction-diffusion pathways for a programmable nanoscale texture of diamond-SiC composite
The diamond-SiC composite has a low density and the highest possible speed of sound among existing materials except for the diamond. The composite is synthesized by a complex exothermic chemical reaction between diamond powder and liquid Si. This makes it an ideal material for protection against impact loading. Experim...
2210.10021v1
2023-11-02
Machine Learning Design of Perovskite Catalytic Properties
Discovering new materials that efficiently catalyze the oxygen reduction and evolution reactions is critical for facilitating the widespread adoption of solid oxide fuel cell and electrolyzer (SOFC/SOEC) technologies. Here, we develop machine learning (ML) models to predict perovskite catalytic properties critical for ...
2311.01401v1
2024-01-22
Order induces toughness in anisotropic colloidal crystal composites
Spatial ordering of matter elicits exotic properties sometimes absent from a material's constituents. A few highly mineralised natural materials achieve high toughness through delocalised damage, whereas synthetic particulate composites must trade toughness for mineral content. We test whether ordering the mineral phas...
2401.11727v1
2016-10-24
Probing Intrinsic Material Conductivity in Two-Terminal Devices: A Resistance-Difference Method
It is generally impossible to separately measure the resistance of the functional component (i.e., the intrinsic device materials) and the parasitic component (i.e., terminals, interfaces and serial loads) in a two-terminal device. Yet such knowledge is important for understanding device physics and designing device sy...
1610.07666v2
2018-03-22
Status and update of the RaDIATE Collaboration R&D Program
The Radiation Damage In Accelerator Target Environments (RaDIATE) collaboration was founded in 2012 and currently consists of over 50 participants and 11 institutions globally. Due to the increasing power of future proton accelerator sources in target facilities, there is a critical need to further understand the physi...
1803.08563v1
2021-12-22
Self-repairing high entropy oxides
All biological organisms, from plants to living creatures, can heal minor wounds and damage. The realization of a similar self-healing capacity in inorganic materials has been a design target for many decades. This would represent a breakthrough in materials engineering, enabling many novel technological applications, ...
2112.11747v1
2004-01-23
Crystal growth and anisotropic transport properties of high-Tc superconductors Bi2Sr2Can-1CunO2n+4+d (n = 2, 3)
Large high-quality single crystals of Bi2Sr2Can-1CunO2n+4+d (n = 2, 3) were successfully grown using an improved traveling solvent floating zone (TSFZ) method, which features a slow growth rate and steep temperature gradient along the melting zone. By measuring anisotropic resistivities and susceptibilities of Bi2Sr2Ca...
0401448v3
2010-04-28
Conductivity states changes in plasticized PVC films near breakdown threshold voltages values
The near threshold "soft breakdown" measurements of PVC films conductivity are investigated. In a wide range of external electric field strength for various rather thick (>20 mkm) PVC films the resistance shows strong nonlinearity and seems to enter high conductive state close to the breakdown threshold. For our "thick...
1004.4972v1
2010-12-27
Superconductivity and Magnetic Properties of high-quality single crystals of $A_{x}$Fe$_2$Se$_2$ ($A$ = K and Cs)
We successfully grew the high-quality single crystals of $A_{x}$Fe$_2$Se$_2$ ($A$ = K and Cs) by self-flux method. Sharp superconducting transition was observed for both types of crystals. The crystals show the onset superconducting transition temperatures ($T_{\rm c}$) of 31 K and 30 K for K- and Cs-compounds, respect...
1012.5552v1
2015-09-15
Epitaxial graphene quantum dots for high-performance THz bolometers
Light absorption in graphene causes a large change in electron temperature, due to low electronic heat capacity and weak electron phonon coupling [1-3], making it very attractive as a hot-electron bolometer material. Unfortunately, the weak variation of electrical resistance with temperature has substantially limited t...
1509.04646v1
2016-11-15
Linear magnetoresistance in a quasi-free two dimensional electron gas in an ultra-high mobility GaAs quantum well
We report a magnetotransport study of an ultra-high mobility ($\bar{\mu}\approx 25\times 10^6$\,cm$^2$\,V$^{-1}$\,s$^{-1}$) $n$-type GaAs quantum well up to 33 T. A strong linear magnetoresistance (LMR) of the order of 10$^5$ % is observed in a wide temperature range between 0.3 K and 60 K. The simplicity of our materi...
1611.04857v1