publicationDate stringlengths 10 10 | title stringlengths 17 233 | abstract stringlengths 20 3.22k | id stringlengths 9 12 |
|---|---|---|---|
2008-04-26 | Origin of resistivity minima at low temperature in ferromagnetic metallic manganites | The resistivity and magnetoresistance measurements were carried out on thin
film of La0.7Ca0.3MnO3 to investigate the possible origin of low temperature
resistivity minimum observed in these samples. We observed large hysteresis in
the magnetoresistance at low temperature; 5K and the sample current I has large
effect o... | 0804.4247v1 |
2015-08-05 | The universal influence of contact resistance on the efficiency of a thermoelectric generator | The influence of electrical and thermal contact resistance on the efficiency
of a segmented thermoelectric generator is investigated. We consider 12
different segmented $p$-legs and 12 different segmented $n$-legs, using 8
different $p$-type and 8 different $n$-type thermoelectric materials. For all
systems a universal... | 1508.01153v1 |
2018-02-10 | Electroforming Free Controlled Bipolar Resistive Switching in Al/CoFe2O4/FTO device with Self-Compliance Effect | Controlled bipolar resistive switching (BRS) has been observed in
nanostructured CoFe2O4 films using Al(aluminum)/CoFe2O4/FTO(fluorine-doped tin
oxide) device. The fabricated device shows electroforming-free uniform BRS with
two clearly distinguished and stable resistance states without any application
of compliance cu... | 1802.03643v1 |
2021-08-20 | Understanding grain boundary electrical resistivity in Cu: the effect of boundary structure | Grain boundaries (GBs) in metals usually increase electrical resistivity due
to their distinct atomic arrangement compared to the grain interior. While the
GB structure has a crucial influence on the electrical properties, its
relationship with resistivity is poorly understood. Here, we perform a
systematic study on th... | 2108.09148v1 |
2003-12-07 | Temperature-dependent contact resistances in high-quality polymer field-effect transistors | Contact resistances between organic semiconductors and metals can dominate
the transport properties of electronic devices incorporating such materials. We
report measurements of the parasitic contact resistance and the true channel
resistance in bottom contact poly(3-hexylthiophene) (P3HT) field-effect
transistors with... | 0312183v1 |
2024-02-26 | A novel method for determining the resistivity of compressed superconducting materials | The resistivity of a superconductor in its normal state plays a critical role
in determining its superconducting ground state. However, measuring the
resistivity of a material under high pressure has long presented a significant
technical challenge due to pressure-induced changes in the crystallographic
directions, esp... | 2402.16257v1 |
2021-09-14 | Internal reverse-biased p-n junctions: a possible origin of the high resistance in phase change superlattice | Phase change superlattice is one of the emerging material technologies for
ultralow-power phase change memories. However, the resistance switching
mechanism of phase change superlattice is still hotly debated. Early electrical
measurements and recent materials characterizations have suggested that the
Kooi phase is ver... | 2109.06376v1 |
2018-04-23 | Magnetic field-induced resistivity upturn and exceptional magneto-resistance in Weyl semimetal TaSb2 | We study magneto-transport properties in single crystals of TaSb_2, which is
a recently discovered topological semimetal. In the presence of magnetic field,
the electrical resistivity shows onset of insulating behaviour followed by
plateau at low temperature. Such resistivity plateau is generally assigned to
topologica... | 1804.08434v1 |
2023-07-12 | Machine learning accelerated discovery of corrosion-resistant high-entropy alloys | Corrosion has a wide impact on society, causing catastrophic damage to
structurally engineered components. An emerging class of corrosion-resistant
materials are high-entropy alloys. However, high-entropy alloys live in
high-dimensional composition and configuration space, making materials designs
via experimental tria... | 2307.06384v3 |
2014-08-26 | Enhancement in Quality Factor of SRF Niobium Cavities by Material Diffusion | An increase in the quality factor of superconducting radiofrequency cavities
is achieved by minimizing the surface resistance during processing steps. The
surface resistance is the sum of temperature independent residual resistance
and temperature/material dependent Bardeen-Cooper-Schrieffer (BCS) resistance.
High temp... | 1408.6245v1 |
2015-12-15 | A Graphene-Carbon Nanotube Hybrid Material for Photovoltaic Applications | Large area graphene sheets grown by chemical vapor deposition can potentially
be employed as a transparent electrode in photovoltaics if their sheet
resistance can be significantly lowered, without any loss in transparency.
Here, we report the fabrication of a graphene-conducting-carbon-nanotube (CCNT)
hybrid material ... | 1512.04617v1 |
2022-06-11 | Modeling of High and Low Resistant States in Single Defect Atomristors | Resistance-change random access memory (RRAM) devices are nanoscale
metal-insulator-metal structures that can store information in their resistance
states, namely the high resistance (HRS) and low resistance (LRS) states. They
are a potential candidate for a universal memory as these non-volatile memory
elements can of... | 2206.05504v1 |
2011-06-06 | Efficient resistive memory effect on SrTiO3 by ionic-bombardment | SrTiO3 is known to exhibit resistive memory effect either with cation-doping
or with high-temperature thermal reduction. Here, we add another scheme,
ionic-bombardment, to the list of tools to create resistive memory effect on
SrTiO3 (STO). In an Ar-bombarded STO crystal, two orders of resistance
difference was observe... | 1106.1203v1 |
2006-02-21 | Evidance for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Oxides | Electric pulse induced resistance (EPIR) switching hysteresis loops for
Pr0.7Ca0.7MnO3 (PCMO) perovskite oxide films were found to exhibit an
additional sharp "shuttle peak" around the negative pulse maximum for films
deposited in an oxygen deficient ambient. The device resistance hysteresis loop
consists of stable hig... | 0602507v2 |
2014-06-16 | Degenerate Resistive Switching and Ultrahigh Density Storage in Resistive Memory | We show that, in tantalum oxide resistive memories, activation power provides
a multi-level variable for information storage that can be set and read
separately from the resistance. These two state variables (resistance and
activation power) can be precisely controlled in two steps: (1) the possible
activation power st... | 1406.4033v1 |
2020-06-10 | Positive versus negative resistance response to hydrogenation in palladium and its alloys | Resistive solid state sensors are widely used in multiple applications,
including molecular and gas detection. Absorption or intercalation of the
target species varies the lattice parameters and an effective thickness of thin
films, which is usually neglected in analyzing their transport properties in
general and the s... | 2006.05801v1 |
2021-06-04 | Noncured Graphene Thermal Interface Materials: Minimizing the Thermal Contact Resistance | We report on experimental investigation of thermal contact resistance of the
noncuring graphene thermal interface materials with the surfaces characterized
by different degree of roughness. It is found that the thermal contact
resistance depends on the graphene loading non-monotonically, achieving its
minimum at the lo... | 2106.02180v1 |
2002-10-24 | Violation of Ioffe-Regel condition but saturation of resistivity of the high Tc cuprates | We demonstrate that the resistivity data of a number of high Tc cuprates, in
particular La(2-x)SrxCuO4, are consistent with resistivity saturation, although
the Ioffe-Regel condition is strongly violated. By using the f-sum rule
together with calculations of the kinetic energy in the t-J model, we show that
the saturat... | 0210543v1 |
2023-04-26 | Theoretical Puncture Mechanics of Soft Compressible Solids | Accurate prediction of the force required to puncture a soft material is
critical in many fields like medical technology, food processing, and
manufacturing. However, such a prediction strongly depends on our understanding
of the complex nonlinear behavior of the material subject to deep indentation
and complex failure... | 2304.13838v1 |
2008-05-23 | Non-hysteretic branches inside the hysteresis loop in VO2 films for focal plane array imaging bolometers | In the resistive phase transition in VO2, temperature excursions from points
on the major hysteresis loop produce minor loops. We have found that for
sufficiently small excursions these minor loops degenerate into single-valued,
non-hysteretic branches (NHBs) having essentially the same or even higher
temperature coeff... | 0805.3566v1 |
2021-05-26 | Investigation of Forming Free Bipolar Resistive Switching Characteristics in Al/Mn3O4/FTO RRAM Device | Bipolar resistive switching (BRS) phenomenon has been demonstrated in Mn3O4
using Al (Aluminum)/Mn3O4/FTO (Fluorine doped Tin Oxide) Resistive Random
Access Memory (RRAM) device. The fabricated RRAM device shows good retention,
non volatile behavior and forming free BRS. The Current-Voltage (I-V)
characteristics and th... | 2105.12390v1 |
1998-08-18 | Resistivity saturation revisited: results from a dynamical mean field theory | We use the dynamical mean field method to study the high-temperature
resistivity of electrons strongly coupled to phonons. The results reproduce the
qualtiative behavior of the temperature and disorder dependence of the
resistivity of the 'A-15' materials, which is commonly described in terms of
saturation, but imply t... | 9808188v2 |
2018-07-13 | A new type of RPC with very low resistive material | There are several working groups that are currently working on high rate
RPC's using different materials such as Si-based Ceramics, Low-resistive Glass,
low-resistive bakelite etc. A new type of single gap RPC has been fabricated
using very low-resistive carbon-loaded PTFE material to compete with all these
other group... | 1807.04984v1 |
2013-04-20 | Electric-Field-Induced Resistive Switching in a Family of Mott Insulators : towards Non-Volatile Mott-RRAM Memories | The fundamental building blocks of modern silicon-based microelectronics,
such as double gate transistors in non-volatile Flash memories, are based on
the control of electrical resistance by electrostatic charging. Flash memories
could soon reach their miniaturization limits mostly because reliably keeping
enough elect... | 1304.5607v1 |
2012-06-26 | Measurement of electrical properties of electrode materials for the bakelite Resistive Plate Chambers | Single gap (gas gap 2 mm) bakelite Resistive Plate Chamber (RPC) modules of
various sizes from 10 cm \times 10 cm to 1 m \times 1 m have been fabricated,
characterized and optimized for efficiency and time resolution. Thin layers of
different grades of silicone compound are applied to the inner electrode
surfaces to ma... | 1206.5894v1 |
2015-09-21 | Resistive Switching in Nanodevices | Passing current at given threshold voltages through a metal/insulator/metal
sandwich structure device may change its resistive state. Such resistive
switching is unique to nanoscale devices, but its underlying physical mechanism
remains unknown. We show that the different resistive states are due to
different spontaneo... | 1509.06169v1 |
2018-06-30 | Nanoscale compositional evolution in complex oxide based resistive memories | Functional oxides based resistive memories are recognized as potential
candidate for the next-generation high density data storage and neuromorphic
applications. Fundamental understanding of the compositional changes in the
functional oxides is required to tune the resistive switching characteristics
for enhanced memor... | 1807.00185v1 |
2018-06-04 | Atomistic Study of the Electronic Contact Resistivity Between the Half-Heusler Alloys (HfCoSb, HfZrCoSb, HfZrNiSn) and the Metal Ag | Half-Heusler(HH) alloys have shown promising thermoelectric properties in the
medium and high temperature range. To harness these material properties for
thermoelectric applications, it is important to realize electrical contacts
with low electrical contact resistivity. However, little is known about the
detailed struc... | 1806.01375v1 |
2009-01-28 | Carbon Based Resistive Memory | We propose carbon as new resistive memory material for non-volatile memories
and compare three allotropes of carbon, namely carbon nanotubes, graphene-like
conductive carbon and insulating carbon for their possible application as
resistance-change material in high density non-volatile memories. Repetitive
high-speed sw... | 0901.4439v1 |
2016-01-31 | Josephson-like Colossal Resistive Switching in Nanocrystalline Y-Ba-Cu-O at Room Temperature | In this paper, we present data for two nanocrystalline YBa2Cu3O7-x (YBCO)
samples which both exhibit Josephson-like Colossal Resistive Switching (JCRS)
in voltage-current (V-I) traces from 4.2 K up to room temperature, in magnetic
fields up to 8 T. We report Josephson-like hysteresis for both positive and
negative curr... | 1602.00271v3 |
2013-08-28 | First studies with the Resistive-Plate WELL gaseous multiplier | We present the results of first studies of the Resistive Plate WELL (RPWELL):
a single-faced THGEM coupled to a copper anode via a resistive layer of high
bulk resistivity. We explored various materials of different bulk resistivity
(10^9 - 10^12 Ohm cm) and thickness (0.4 - 4 mm). Our most successful
prototype, with a... | 1308.6152v1 |
2021-02-07 | Quantum Conductors Formation and Resistive Switching Memory Effects in Zirconia Nanotubes | The development prospects of memristive elements for non-volatile memory with
use of the metal-dielectric-metal sandwich structures with a thin oxide layer
are due to the possibility of reliable forming the sustained functional states
with quantized resistance. In the paper we study the properties of fabricated
memrist... | 2102.03764v1 |
2004-07-16 | Negative Differential Resistivity and Positive Temperature Coefficient of Resistivity effect in the diffusion limited current of ferroelectric thin film capacitors | We present a model for the leakage current in ferroelectric thin- film
capacitors which explains two of the observed phenomena that have escaped
satisfactory explanation, i.e. the occurrence of either a plateau or negative
differential resistivity at low voltages, and the observation of a Positive
Temperature Coefficie... | 0407428v1 |
2015-05-18 | Nonpolar resistive memory switching with all four possible resistive switching modes in amorphous ternary rare earth LaHoO3 thin films | We studied the resistive memory switching in pulsed laser deposited amorphous
LaHoO3 (LHO) thin films for non-volatile resistive random access memory (RRAM)
applications. Nonpolar resistive switching (RS) was achieved in PtLHOPt memory
cells with all four possible RS modes ( positive unipolar, positive bipolar,
negativ... | 1505.04690v1 |
2019-07-23 | Electron transport in high-entropy alloys: Al$_{x}$CrFeCoNi as a case study | The high-entropy alloys Al$_{x}$CrFeCoNi exist over a broad range of Al
concentrations ($0 < x < 2$). With increasing Al content their structure is
changed from the fcc to bcc phase. We investigate the effect of such structural
changes on transport properties including the residual resistivity and the
anomalous Hall re... | 1907.09731v1 |
2018-04-14 | Investigating the Composite/Metal Interface and its Influence on the Electrical Resistance Measurement | The advantages introduced by carbon fiber reinforced polymer (CFRP)
composites has made them an appropriate choice in many applications and an
ideal replacement for conventional materials. The benefits using CFRP
composites are due to their lightweight, high stiffness, as well as corrosion
resistance. For this reason, ... | 1804.06246v1 |
2018-08-09 | Underlying burning resistant mechanisms for titanium alloy | The "titanium fire" as produced during high pressure and friction is the
major failure scenario for aero-engines. To alleviate this issue, Ti-V-Cr and
Ti-Cu-Al series burn resistant titanium alloys have been developed. However,
which burn resistant alloy exhibit better property with reasonable cost needs
to be evaluate... | 1808.02976v1 |
2005-10-03 | Buffer-Enhanced Electrical-Pulse-Induced-Resistive Memory Effect in Thin Film Perovskites | A multilayer perovskite thin film resistive memory device has been developed
comprised of: a Pr0.7Ca0.3MnO3 (PCMO) perovskite oxide epitaxial layer on a
YBCO bottom thin film electrode; a thin yttria stabilized zirconia (YSZ) buffer
layer grown on the PCMO layer, and a gold thin film top electrode. The
multi-layer thin... | 0510060v1 |
2020-04-24 | Solution-processed silver sulphide nanocrystal film for resistive switching memories | Resistive switching memories allow electrical control of the conductivity of
a material, by inducing a high resistance (OFF) or a low resistance (ON) state,
using electrochemical and ion transport processes. As alternative to high
temperature and vacuum-based physical sulphurization methods of silver (Ag),
here we prop... | 2004.11875v1 |
2005-12-22 | Measurement of Local Reactive and Resistive Photoresponse of a Superconducting Microwave Device | We propose and demonstrate a spatial partition method for the high-frequency
photo-response of superconducting devices correlated with inductive and
resistive changes in microwave impedance. Using a laser scanning microscope, we
show that resistive losses are mainly produced by local defects at microstrip
edges and by ... | 0512572v1 |
2002-10-28 | Nanometer-Scale Metallic Grains Connected with Atomic-Scale Conductors | We describe a technique for connecting a nanometer-scale gold grain to leads
by atomic-scale gold point contacts. These devices differ from previous
metallic quantum dots in that the conducting channels are relatively
well-transmitting. We investigate the dependence of the Coulomb blockade on
contact resistance. The hi... | 0210620v1 |
2004-08-05 | Influence of Grain size on the Electrical Properties of ${\rm Sb_2Te_3}$ Polycrystalline Films | Resistance of vacuum deposited ${\rm Sb_2Te_3}$ films of thickness between
100-500nm has been measured in vacuum. It is found that the resistance of the
polycrystalline films strongly depends on the grain size and inter-granular
voids. The charge carrier are shown to cross this high resistivity inter-
granular void by ... | 0408116v1 |
2008-05-03 | Resistance Quenching in Graphene Interconnects | We investigated experimentally the high-temperature electrical resistance of
graphene interconnects. The test structures were fabricated using the focused
ion beam from the single and bi-layer graphene produced by mechanical
exfoliation. It was found that as temperature increases from 300 to 500K the
resistance of the ... | 0805.0334v1 |
2008-05-12 | Negative differential resistance and pulsed current induced multi-level resistivity switching in charge ordered and disordered manganites | We have investigated direct and pulsed current induced electroresistance in
two manganites with different electronic and magnetic ground states:
charge-orbital ordered 50 % Ca doped NdMnO3 and 50 % Mn doped LaNiO3. It has
been shown that negative differential resistance observed at high current
density in these compoun... | 0805.1643v1 |
2012-07-13 | Enhanced Resolution of Poly-(Methyl Methacrylate) Electron Resist by Thermal Processing | Granular nanostructure of electron beam resist had limited the ultimate
resolution of electron beam lithography. We report a thermal process to achieve
a uniform and homogeneous amorphous thin film of poly methyl methacrylate
electron resist. This thermal process consists of a short time-high temperature
backing proces... | 1207.3183v1 |
2016-11-12 | Anomalous resistivity upturn in epitaxial L21-Co2MnAl films | We report the controllable growth and the intriguing transport behavior of
high-spin-polarization epitaxial L21-Co2MnAl films, which exhibit a
low-temperature (T) resistivity upturn with pronounced T1/2 dependence, close
relevance to structural disorder, and robust independence of magnetic fields.
The resistivity uptur... | 1611.04013v2 |
2011-04-06 | Temperature dependence of contact resistance of Au-Ti-Pd2Si-n+-Si ohmic contacts | We investigated temperature dependence of contact resistance of an
Au-Ti-Pd2Si ohmic contact to heavily doped n+-Si. The contact resistance
increases with temperature owing to conduction through the metal shunts. In
this case, the limiting process is diffusion input of electrons to the metal
shunts. The proposed mechan... | 1104.1030v1 |
2021-04-25 | Electrical resistivity in 2d Kondo lattice systems | I extend the calculations represented in \cite{konav} regarding the
resistivity in Kondo lattice materials from $3d$ syatem to $2d$ systems. In the
present work I consider a 2d system, and memory function is computed. However,
results found in 2d case are different from 3d system . I find that in $2d$ in
low temperatur... | 2104.12129v1 |
2008-01-22 | Abnormal Resistance Switching Behaviors of NiO Thin Films: Possible Occurrence of Simultaneous Formation and Rupture of Conducting Channels | We report the detailed current-voltage (I-V) characteristics of resistance
switching in NiO thin films. In unipolar resistance switching, it is commonly
believed that conducting filaments will rupture when NiO changes from a low
resistance to a high resistance state. However, we found that this resistance
switching can... | 0801.3323v1 |
2009-08-12 | Large 1/f noise of unipolar resistance switching and its percolating nature | We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar
resistance switching. When they were switched from the low to high resistance
states, the power spectral density of the voltage fluctuation was increased by
approximately five orders of magnitude. At 100 K, the relative resistance
fluctuation, SR/... | 0908.1606v1 |
2017-04-11 | Scalability of Voltage-Controlled Filamentary and Nanometallic Resistance Memories | Much effort has been devoted to device and materials engineering to realize
nanoscale resistance random access memory (RRAM) for practical applications,
but there still lacks a rational physical basis to be relied on to design
scalable devices spanning many length scales. In particular, the critical
switching criterion... | 1704.03415v1 |
2021-10-07 | A Modern-day Alchemy: Double Glow Plasma Surface Metallurgy Technology | In the long history of science and technology development, one goal is to
diffuse solid alloy elements into the surface of steel materials to form
surface alloys with excellent physical and chemical properties. On the basis of
plasma nitriding technology, double glow plasma surface metallurgy technology
has answered th... | 2110.03236v1 |
2019-09-15 | Large Resistivity Reduction in Mixed-Valent CsAuBr$_3$ Under Pressure | We report on high-pressure $p \leq 45$ GPa resistivity measurements on the
perovskite-related mixed-valent compound CsAuBr$_3$. The compounds
high-pressure resistivity can be classified into three regions: For low
pressures ($p < 10$ GPa) an insulator to metal transition is observed; between
$p= 10$ GPa and 14 GPa the ... | 1909.06874v1 |
2023-02-25 | Peculiarities of electron transport and resistive switching in point contacts on TiSe2, TiSeS and CuxTiSe2 | TiSe2 has received much attention among the transition metals chalcogenides
because of its thrilling physical properties concerning atypical resistivity
behavior, emerging of charge density wave (CDW) state, induced
superconductivity etc. Here, we report discovery of new feature of TiSe2,
namely, observation of resisti... | 2302.13085v1 |
2021-04-21 | A First-Principles-Based Approach to The High-Throughput Screening of Corrosion-Resistant High Entropy Alloys | The design of corrosion-resistant high entropy alloys (CR-HEAs) is
challenging due to the alloys' virtually astrological composition space. To
facilitate this, efficient and reliable high-throughput exploratory approaches
are needed. Toward this end, the current work reports a first-principles-based
approach exploiting... | 2104.10590v1 |
2023-04-02 | Percolation-induced resistivity drop in cold-pressed LuH2 | The stoichiometric bulk LuH2 is a paramagnetic metal with high electrical
conductivity comparable to simple metals. Here we show that the resistivity of
cold-pressed (CP) LuH2 samples varies sensitively upon modifying the grain size
or surface conditions via the grinding process, i.e., the CP pellets made of
commercial... | 2304.00558v1 |
2017-07-28 | High-temperature quantum oscillations of the Hall resistance in bulk Bi$_2$Se$_3$ | Helically spin-polarized Dirac fermions (HSDF) in protected topological
surface states (TSS) are of high interest as a new state of quantum matter. In
three-dimensional (3D) materials with TSS, electronic bulk states often mask
the transport properties of HSDF. Recently, the high-field Hall resistance and
low-field mag... | 1707.09181v1 |
2005-11-15 | Unconventional Hall effect in oriented Ca$_3$Co$_4$O$_9$ thin films | Transport properties of the good thermoelectric misfit oxide
Ca$_3$Co$_4$O$_9$ are examined. In-plane resistivity and Hall resistance
measurements were made on epitaxial thin films which were grown on {\it c}-cut
sapphire substrates using the pulsed laser deposition technique. Interpretation
of the in-plane transport e... | 0511374v1 |
2013-10-21 | Micro Pixel Chamber with resistive electrodes for spark reduction | The Micro Pixel Chamber (mu-PIC) using resistive electrodes has been
developed and tested. The surface cathodes are made from resistive material, by
which the electrical field is reduced when large current is flowed.
Two-dimensional readouts are achieved by anodes and pickup electrodes, on which
signals are induced. Hi... | 1310.5550v1 |
2023-11-28 | Quantifying the contribution of material and junction resistances in nano-networks | Networks of nanowires and nanosheets are important for many applications in
printed electronics. However, the network conductivity and mobility are usually
limited by the inter-particle junction resistance, a property that is
challenging to minimise because it is difficult to measure. Here, we develop a
simple model fo... | 2311.16740v1 |
2016-02-04 | Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors | We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts
for a variety of transition metal dichalcogenides (TMDs) using van der Waals
assembly of substitutionally doped TMDs as drain/source contacts and TMDs with
no intentional doping as channel materials. We demonstrate that few-layer WSe2
field-ef... | 1602.01790v1 |
2013-12-30 | Deviations from Matthiessen rule and resistivity saturation effects in Gd and Fe | According to earlier first-principles calculations, the spin-disorder
contribution to the resistivity of rare-earth metals in the paramagnetic state
is strongly underestimated if Matthiessen's rule is assumed to hold. To
understand this discrepancy, the resistivity of paramagnetic Fe and Gd is
evaluated by taking into ... | 1312.7802v1 |
2016-11-08 | Controlling friction in a manganite surface by resistive switching | We report a significant change in friction of a $\rm La_{0.55}Ca_{0.45}MnO_3$
thin film measured as a function of the materials resistive state under
ultrahigh vacuum conditions at room temperature by friction force microscopy.
While friction is high in the insulating state, it clearly changes to lower
values if the pr... | 1611.02684v1 |
2019-10-05 | Metamaterial insertions for resistive-wall beam-coupling impedance reduction | Resistive-wall impedance usually constitutes a significant percentage of the
total beamcoupling impedance budget of an accelerator. Reduction techniques
often entail high electrical-conductivity coatings. This paper investigates the
use of negative-permittivity or negative-permeability materials for sensibly
reducing o... | 1910.02246v1 |
2020-07-07 | Resistivity saturation in an electron-doped cuprate | We report the observation of resistivity saturation in lightly doped ($x\sim
0.10)$ as-grown samples of the electron-doped cuprate La$_{2-x}$Ce$_x$CuO$_4$
(LCCO). The saturation occurs at resistivity values roughly consistent with the
phenomenological Mott-Ioffe-Regel criterion once the low effective carrier
density of... | 2007.03685v1 |
2015-06-24 | Resonant tunneling in a quantum oxide superlattice | Resonant tunnelling is a quantum mechanical process that has long been
attracting both scientific and technological attention owing to its intriguing
underlying physics and unique applications for high-speed electronics. The
materials system exhibiting resonant tunnelling, however, has been largely
limited to the conve... | 1506.07583v1 |
2021-08-26 | An investigation of high entropy alloy conductivity using first-principles calculations | The Kubo-Greenwood equation, in combination with the first-principles
Korringa-Kohn-Rostoker Coherent Potential Approximation (KKR-CPA) can be used
to calculate the DC residual resistivity of random alloys at T = 0 K. We
implemented this method in a multiple scattering theory based ab initio
package, MuST, and applied ... | 2108.11739v1 |
2024-01-27 | Influence od the process parameters on the quality a efficiency of the resistance spot welding process of advanced high strength complex phase stells | The effects of electrical characteristics of an inverter combined with main
welding parameters on the resistance spot weldability of advanced high strength
steels AHSS CP1000 is investigated. | 2401.15457v1 |
2016-02-22 | The effect of Ta oxygen scavenger layer on HfO$_2$-based resistive switching behavior: thermodynamic stability, electronic structure, and low-bias transport | Reversible resistive switching between high-resistance and low-resistance
states in metal-oxide-metal heterostructures makes them very interesting for
applications in random access memories. While recent experimental work has
shown that inserting a metallic "oxygen scavenger layer" between the positive
electrode and ox... | 1602.06793v1 |
2002-09-04 | Electrical resistivity at large temperatures: Saturation and lack thereof | Many transition metal compounds show saturation of the resistivity at high
temperatures, T, while the alkali-doped fullerenes and the high-Tc cuprates are
usually considered to show no saturation. We present a model of transition
metal compounds, showing saturation, and a model of alkali-doped fullerenes,
showing no sa... | 0209099v1 |
2023-12-26 | Corrosion-resistant aluminum alloy design through machine learning combined with high-throughput calculations | Efficiently designing lightweight alloys with combined high corrosion
resistance and mechanical properties remains an enduring topic in materials
engineering. To this end, machine learning (ML) coupled ab-initio calculations
is proposed within this study. Due to the inadequate accuracy of conventional
stress-strain ML ... | 2312.15899v1 |
2001-03-01 | Properties of Pt Schottky Type Contacts On High-Resistivity CdZnTe Detectors | In this paper we present studies of the I-V characteristics of CdZnTe
detectors with Pt contacts fabricated from high-resistivity single crystals
grown by the high-pressure Brigman process. We have analyzed the experimental
I-V curves using a model that approximates the CZT detector as a system
consisting of a reversed... | 0103005v1 |
2010-01-27 | An anomalous butterfly-shaped magnetoresistance loop in an alloy, Tb4LuSi3 | Magnetic-field (H) induced first-order magnetic transition and the assiciated
electronic phase-separation phenomena are active topics of research in
magnetism. Magnetoresistance (MR) is a key property to probe these phenomena
and, in literature, a butterfly-shaped MR loop has been noted while cycling the
field, with th... | 1001.4942v1 |
2006-03-31 | Clustering of vacancy defects in high-purity semi-insulating SiC | Positron lifetime spectroscopy was used to study native vacancy defects in
semi-insulating silicon carbide. The material is shown to contain (i) vacancy
clusters consisting of 4--5 missing atoms and (ii) Si vacancy related
negatively charged defects. The total open volume bound to the clusters
anticorrelates with the e... | 0603849v3 |
2024-01-26 | New perspectives of Hall effects from first-principles calculations | The Hall effect has been a fascinating topic ever since its discovery,
resulting in exploration of entire family of this intriguing phenomena. As the
field of topology develops and novel materials emerge endlessly over the past
few decades, researchers have been passionately debating the origins of various
Hall effects... | 2401.15150v1 |
2012-04-12 | Effect of crystallographic anisotropy on the resistance switching phenomenon in perovskites | Resistance switching effects in metal/perovskite contacts based on epitaxial
c-axis oriented Y-Ba-Cu-O (YBCO) thin films with different crystallographic
orientations have been studied. Three types of Ag/YBCO junctions with the
contact restricted to (i) c-axis direction, (ii) ab-plane direction, and (iii)
both were desi... | 1204.2598v1 |
2013-04-07 | Characterization and simulation of resistive-MPGDs with resistive strip and layer topologies | The use of resistive technologies to MPGD detectors is taking advantage for
many new applications, including high rate and energetic particle flux
scenarios. The recent use of these technologies in large area detectors makes
necessary to understand and characterize the response of this type of detectors
in order to opt... | 1304.2057v1 |
2014-07-31 | Compact chromium oxide thin film resistors for use in nanoscale quantum circuits | We report on the electrical characterisation of a series of thin chromium
oxide films, grown by dc sputtering, to evaluate their suitability for use as
on-chip resistors in nanoelectronics. By increasing the level of oxygen doping,
the room-temperature sheet resistance of the chromium oxide films was varied
from 28$\Om... | 1407.8467v1 |
2016-06-12 | Interlayer Resistance of Misoriented MoS2 | Interlayer misorientation in transition metal dichalcogenides alters the
interlayer distance, the electronic band structure, and the vibrational modes,
but, its effect on the interlayer resistance is not known. This work analyzes
the coherent interlayer resistance of misoriented 2H-MoS2 for low energy
electrons and hol... | 1606.03682v1 |
2017-11-30 | Universal Scaling in Intrinsic Resistivity of Two-Dimensional Metal Borophene | Two-dimensional boron sheets (borophenes) have been successfully synthesized
in experiments and are expected to exhibit intriguing transport properties such
as the emergence of superconductivity and Dirac Fermions. However, quantitative
understanding of intrinsic electrical transport of borophene has not been
achieved.... | 1711.11186v1 |
2018-05-05 | Tetrahedral amorphous carbon resistive memories with graphene-based electrodes | Resistive-switching memories are alternative to Si-based ones, which face
scaling and high power consumption issues. Tetrahedral amorphous carbon (ta-C)
shows reversible, non-volatile resistive switching. Here we report polarity
independent ta-C resistive memory devices with graphene-based electrodes. Our
devices show ... | 1805.02100v1 |
2017-03-10 | Unipolar resistive switching in cobalt titanate thin films | We report giant resistive switching of an order of 104, long-time charge
retention characteristics up to 104 s, non-overlapping SET and RESET voltages,
ohmic in low resistance state (LRS) and space charge limited current (SCLC)
mechanism in high resistance state (HRS) properties in polycrystalline
perovskite Cobalt Tit... | 1703.03662v1 |
2015-04-21 | The question of intrinsic origin of the metal-insulator transition in i-AlPdRe quasicrystal | The icosahedral (i-) AlPdRe is the most resistive quasicrystalline alloy
discovered so far. Resistivities ($\rho$) of $1\Omega cm$ at 4K and correlated
resistance ratios ($RRR = \rho_{4K}/\rho_{300K}$) of more than 200 are observed
in polycrystalline samples. These values are two orders of magnitude larger
than for the... | 1504.05464v1 |
2023-04-08 | Novel resistive charge-multipliers for dual-phase LAr-TPCs: towards stable operation at higher gains | Cryogenic versions of Resistive WELL (RWELL) and Resistive Plate WELL
(RPWELL) detectors have been developed, aimed at stable avalanche
multiplication of ionization electrons in dual-phase TPCs. In the RWELL, a thin
resistive layer deposited on top of an insulator is inserted in between the
electron multiplier (THGEM) ... | 2304.04044v4 |
2012-02-10 | What Causes High Resistivity in CdTe | CdTe can be made semi-insulating by shallow donor doping. This is routinely
done to obtain high resistivity in CdTe-based radiation detectors. However, it
is widely believed that the high resistivity in CdTe is due to the Fermi level
pinning by native deep donors. The model based on shallow donor compensation of
native... | 1202.2255v1 |
2003-05-17 | Saturation of electrical resistivity | Resistivity saturation is observed in many metallic systems with a large
resistivity, i.e., when the resistivity has reached a critical value, its
further increase with temperature is substantially reduced. This typically
happens when the apparent mean free path is comparable to the interatomic
separations - the Ioffe-... | 0305412v1 |
2004-07-06 | High pressure effects on the electrical resistivity behavior of the Kondo lattice, YbPd2Si2 | We report the influence of external pressure (P= up to 8 GPa) on the
temperature dependence of electrical resistivity of a Yb-based Kondo lattice,
YbPd2Si2, which does not undergo magnetic ordering under ambient pressure
condition. There are qualitative changes in the temperature dependence of
electrical resistivity du... | 0407125v1 |
2014-08-19 | Effect of silicon resistivity on its porosification using metal induced chemical etching | A comparison of porous structures formed from silicon (Si) wafers with
different resistivities has been reported here based on the morphological
studies carried out using scanning electron microscope (SEM). The porous Si
samples have been prepared using metal induced etching (MIE) technique from two
different Si wafers... | 1408.4314v1 |
2020-09-07 | Tuneable Magneto-Resistance by Severe Plastic Deformation | Bulk metallic samples were synthesized from different binary powder mixtures
consisting of elemental Cu, Co, and Fe using severe plastic deformation. Small
particles of the ferromagnetic phase originate in the conductive Cu phase,
either by incomplete dissolution or by segregation phenomena during the
deformation proce... | 2009.02952v1 |
2017-11-22 | High Efficiency Thin Film Superlattice Thermoelectric Cooler Modules Enabled by Low Resistivity Contacts | V-telluride superlattice thin films have shown promising performance for
on-chip cooling devices. Recent experimental studies have indicated that device
performance is limited by the metal/semiconductor electrical contacts. One
challenge in realizing a low resistivity contacts is the absence of fundamental
knowledge of... | 1711.08481v1 |
2000-02-17 | Ion-Beam Induced Current in High-Resistance Materials | The peculiarities of electric current in high-resistance materials, such as
semiconductors or semimetals, irradiated by ion beams are considered. It is
shown that after ion--beam irradiation an unusual electric current may arise
directed against the applied voltage. Such a negative current is a transient
effect appeari... | 0002264v1 |
2021-11-15 | Resistive-nanoindentation on gold: Experiments and modeling of the electrical contact resistance | This paper reports the experimental, analytical, and numerical study of
resistive-nanoindentation tests performed on gold samples (bulk and thin film).
First, the relevant contributions to electrical contact resistance are
discussed and analytically described. A brief comparison of tests performed on
gold and on native... | 2111.15474v1 |
2023-08-09 | Observation of abnormal resistance-temperature behavior along with diamagnetic transition in Pb$_{10-x}$Cu$_x$(PO$_4$)$_6$O-based composite | Recently, Sukbae Lee et al.reported that material
Pb$_{10-x}$Cu$_x$(PO$_4$)$_6$O (LK-99) has a series of characteristics of room
temperature superconductors, including diamagnetic transition, resistance jump,
nearly zero-resistance, magnetic field-dependent IV characteristics and so on
(10.6111/JKCGCT.2023.33.2.061, ar... | 2308.05001v1 |
1995-12-14 | Vortex structure and resistive transitions in high-Tc superconductors | The nature of the resistive transition for a current applied parallel to the
magnetic field in high-Tc materials is investigated by numerical simulation on
the three dimensional Josephson junction array model. It is shown by using
finite size scaling that for samples with disorder the critical temperature Tp
for the c ... | 9512003v1 |
2010-06-26 | Stabilizing the forming process in unipolar resistance switching using an improved compliance current limiter | The high reset current IR in unipolar resistance switching now poses major
obstacles to practical applications in memory devices. In particular, the first
IR-value after the forming process is so high that the capacitors sometimes do
not exhibit reliable unipolar resistance switching. We found that the
compliance curre... | 1006.5132v1 |
2011-07-06 | Hysteretic magnetic pinning and reversible resistance switching in High-Tc superconductor/ferromagnet multilayers | We study a high-TC superconducting (YBa2Cu3O7-d) / ferromagnetic (Co/Pt
multilayer) hybrid which exhibits resistance switching driven by the magnetic
history: depending on the direction of the external field, a pronounced
decrease or increase of the mixed-state resistance is observed as magnetization
reversal occurs wi... | 1107.1122v1 |
2017-05-11 | The role of contact resistance in graphene field-effect devices | The extremely high carrier mobility and the unique band structure, make
graphene very useful for field-effect transistor applications. According to
several works, the primary limitation to graphene based transistor performance
is not related to the material quality, but to extrinsic factors that affect
the electronic t... | 1705.04025v1 |
2022-09-13 | Unconventional Resistivity Scaling in Topological Semimetal CoSi | Nontrivial band topologies in semimetals lead to robust surface states that
can contribute dominantly to the total conduction. This may result in reduced
resistivity with decreasing feature size contrary to conventional metals, which
may highly impact the semiconductor industry. Here we study the resistivity
scaling of... | 2209.06135v1 |
2019-10-31 | Tackling Challenges in Seebeck Coefficient Measurement of Ultra-High Resistance Samples with an AC Technique | Seebeck coefficient is a widely-studied semiconductor property. Conventional
Seebeck coefficient measurements are based on DC voltage measurement. Normally
this is performed on samples with low resistances below a few Mohm level.
Meanwhile, certain semiconductors are highly intrinsic and resistive, many
examples can be... | 1910.14205v1 |
2021-04-03 | Resistive switching of tetraindolyl derivative in ultrathin films: A potential candidate for non-volatile memory applications | Bipolar resistive switching using organic molecule is very promising for
memory application owing to their advantages like simple device structure, low
manufacturing cost, their stability and flexibility etc. Herein we report
Langmuir-Blodgett and spin-coated film based bipolar resistive switching
devices using organic... | 2104.01298v1 |
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