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From ivleigh at umich.edu Wed May 24 14:24:32 2023 |
From: ivleigh at umich.edu (Jennifer Honeycutt) |
Date: Wed, 24 May 2023 14:24:32 -0400 |
Subject: [labnetwork] Customs and Duty |
Message-ID: <CAOsRozK6K59UBLfiSFipJsT+=PS=j+MWJS4FEPTYuMSfS+=-ZA@mail.gmail.com> |
Greetings, |
This email is to request any advice on customs and duty exemption for |
research equipment and supplies. Has anyone found a system that works? |
This has become a significant cause for concern during the past year or |
so. I have been in a purchasing role since 2008 and I have never |
encountered such inconsistencies, even with orders from the same supplier. |
I fear we are unnecessarily paying fees that could possibly be exempt, but |
haven't been able to find any straightforward answers. |
Any help would be greatly appreciated. |
Kind regards, |
-- |
Jennifer Honeycutt |
Purchasing Supervisor |
Electrical Engineering and Computer Science |
University of Michigan |
1301 Beal Avenue | 5200 EECS Building |
Ann Arbor, MI 48109 | 734-615-6364 |
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From yxzhuphys245 at gmail.com Thu May 25 20:26:36 2023 |
From: yxzhuphys245 at gmail.com (Zhu Yunxuan) |
Date: Thu, 25 May 2023 19:26:36 -0500 |
Subject: [labnetwork] Question regarding amorphous Si deposition |
Message-ID: <CAFAjiqDPgEEwuTR+LpMwYHqXYBEvZFATTF+W2TCYCL1V1cD4iw@mail.gmail.com> |
Hi everyone, |
Is there a way to deposit thick amorphous Si on several micrometres |
scale(~5um or above) but with a low processing temperature (<150 deg C)? |
PECVD is one possibility but the typical operating substrate temperature is |
too high (>200 deg C) which will destroy our device. |
Best regards, |
Longji Cui |
University of Colorado Boulder |
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From cg70 at rice.edu Fri May 26 12:03:30 2023 |
From: cg70 at rice.edu (Carlos Gramajo) |
Date: Fri, 26 May 2023 11:03:30 -0500 |
Subject: [labnetwork] Question regarding amorphous Si deposition |
In-Reply-To: <CAFAjiqDPgEEwuTR+LpMwYHqXYBEvZFATTF+W2TCYCL1V1cD4iw@mail.gmail.com> |
References: <CAFAjiqDPgEEwuTR+LpMwYHqXYBEvZFATTF+W2TCYCL1V1cD4iw@mail.gmail.com> |
Message-ID: <CAN_dhOki7BST=9cJpjRY8PBoyFREzr7KvnUPnJwoEDp7tSibjg@mail.gmail.com> |
Hi Zhu, |
I have done 1 ?m films of amorphous Si in an e-beam evaporation chamber. I |
had some issues with delamination when I was growing it. What I had to do |
was to slow down the rate of deposition. Unfortunately that means you have |
longer deposition times, therefore more exposure to radiative heat from |
the source. In that chamber we did not have a thermocouple on the sample |
holder and we didn't know what was the max temperature reached. |
It may be worth trying if you have a way to measure T and see if you can |
keep that in check by growing it in stages with cooling times in between. |
I hope this helps, |
Cheers, |
Carlos |
On Fri, May 26, 2023 at 6:57?AM Zhu Yunxuan <yxzhuphys245 at gmail.com> wrote: |
> Hi everyone, |
> |
> Is there a way to deposit thick amorphous Si on several micrometres |
> scale(~5um or above) but with a low processing temperature (<150 deg C)? |
> PECVD is one possibility but the typical operating substrate temperature is |
> too high (>200 deg C) which will destroy our device. |
> |
> Best regards, |
> Longji Cui |
> |
> University of Colorado Boulder |
> _______________________________________________ |
> labnetwork mailing list |
> labnetwork at mtl.mit.edu |
> |
> https://urldefense.com/v3/__https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork__;!!BuQPrrmRaQ!iEEe9-9D49oHAlx2fmI8df9fC8KZJ0unnifnDxhvfLmZv-NC19Mba9aHRcQkySO78VTunKanJAnd3vt_IgVk_tWbYPqw$ |
> |
-- |
Carlos Gramajo |
Cleanroom Research Scientist |
Shared Equipment Authority (SEA), Rice University |
Cell: 713-743-8115; Office: 713-348-8243; cg70 at rice.edu |
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From Peter.Lomax at ed.ac.uk Mon May 29 05:23:13 2023 |
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