srobertsphd/mit-labnetwork · Datasets at Hugging Face

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Requested etch is similar to removing a 10um device silicon layer off an SOI wafer and stopping in BOX layer...
Open to wet or dry etch methods. If wet, single-sided processing is preferred to prevent etching back of wafer, but a tank etch is acceptable if a viable option exists.
Can anyone point me towards a service or lab facility that could perform this etch in low volumes (10-12 wafers/month)?
Thanks for your input.
Randy Parker
Sr. Process Engineer
American Semiconductor, Inc.
208-336-2773, ext 23
All content and attachments are ASI confidential and proprietary.
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From L.A.Boodhoo at southampton.ac.uk Fri Sep 15 07:05:35 2023
From: L.A.Boodhoo at southampton.ac.uk (Liam Boodhoo)
Date: Fri, 15 Sep 2023 11:05:35 +0000
Subject: [labnetwork] 200mm Bulk Silicon Etch Process Needed
In-Reply-To: <CWXP265MB4876AD07682094985CA19974B0F6A@CWXP265MB4876.GBRP265.PROD.OUTLOOK.COM>
References: <8e0e2b1a35f54bc880b32e27733bfc02@americansemi.com>
<CWXP265MB4876AD07682094985CA19974B0F6A@CWXP265MB4876.GBRP265.PROD.OUTLOOK.COM>
Message-ID: <CWLP265MB6499E5BA157F06FD44E0CFF3F9F6A@CWLP265MB6499.GBRP265.PROD.OUTLOOK.COM>
Hi Randy,
My colleague Owain Clark passed this on to me. My name is Liam Boodhoo, I am the ECSP Commercial Processing Manager at the Southampton Nanofabrication Centre. This looks like something we can possibly help with. Can you confirm a few things for us to be sure?
* Do the wafers have active devices on the other side of the wafer?
* Can we use sacrificial protective layers on the other side?
* Are there any metals that are silicon carrier lifetime killers (like copper for example)?
* Is an edge exclusion acceptable for this process?
If a call is a quicker way to share information, we can set that up.
Many thanks,
Liam
Dr Liam A. Boodhoo
ECSP Commercial Processing Manager
Southampton Nanofabrication Centre
University of Southampton
Southampton
SO17 1BJ
UK
Phone: +44 (0) 23 8059 2650
Email: L.A.Boodhoo at Southampton.ac.uk<mailto:L.A.Boodhoo at Southampton.ac.uk>
From: labnetwork <labnetwork-bounces at mtl.mit.edu<mailto:labnetwork-bounces at mtl.mit.edu>> On Behalf Of Randall Parker
Sent: 14 September 2023 17:41
To: labnetwork at mtl.mit.edu<mailto:labnetwork at mtl.mit.edu>
Subject: [labnetwork] 200mm Bulk Silicon Etch Process Needed
CAUTION: This e-mail originated outside the University of Southampton.
We have a need to etch a thin layer of silicon off of 200mm wafers. The silicon layer is freshly ground and unpatterned. Etch needs to have sufficient oxide selectivity to stop within a buried oxide layer which is 0.2-1.0um thick. Entire silicon layer needs to be removed (ex. no edge exclusion due to clamping ring).
Requested etch is similar to removing a 10um device silicon layer off an SOI wafer and stopping in BOX layer...
Open to wet or dry etch methods. If wet, single-sided processing is preferred to prevent etching back of wafer, but a tank etch is acceptable if a viable option exists.
Can anyone point me towards a service or lab facility that could perform this etch in low volumes (10-12 wafers/month)?
Thanks for your input.
Randy Parker
Sr. Process Engineer
American Semiconductor, Inc.
208-336-2773, ext 23
All content and attachments are ASI confidential and proprietary.
-------------- next part --------------
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From joseph.losby at ucalgary.ca Fri Sep 15 13:33:22 2023
From: joseph.losby at ucalgary.ca (Joseph Losby)
Date: Fri, 15 Sep 2023 17:33:22 +0000
Subject: [labnetwork] Jupiter Callisto abatement system N2 usage
Message-ID: <YT1PR01MB8715EF5760E9C8645401BF308EF6A@YT1PR01MB8715.CANPRD01.PROD.OUTLOOK.COM>
Hi everyone,
According to Critical Systems inc., 18 CFM (7 CFM emergency purge, 3 CFM normal purge, 8 CFM venturi pump) of N2 should be allocated to the Jupiter Callisto abatement system. That seems like a lot to allocate to one piece of equipment. Do any of you have any experience with them, and is this N2 usage realistic? Is there a situation where the normal and emergency purges kick in at the same time?
Cheers,
Joe
Joe Losby, PhD
Manager, qLab Operations
[cid:82a07d3a-2d5b-4c9e-8b72-26fd32fb811b]
Quantum City?s qConnect 2023: Connecting quantum creators and users \| Join us November 15-17, 2023 in Calgary, Alberta at Telus Convention Centre. Click here for more information.<https://research.ucalgary.ca/quantum-city/quantum-city/quantum-city/q-connect-2023>
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From rob.breisch at trilliumus.com Fri Sep 15 16:18:18 2023
From: rob.breisch at trilliumus.com (Rob Breisch)
Date: Fri, 15 Sep 2023 20:18:18 +0000
Subject: [labnetwork] Jupiter Callisto abatement system N2 usage
In-Reply-To: <YT1PR01MB8715EF5760E9C8645401BF308EF6A@YT1PR01MB8715.CANPRD01.PROD.OUTLOOK.COM>
References: <YT1PR01MB8715EF5760E9C8645401BF308EF6A@YT1PR01MB8715.CANPRD01.PROD.OUTLOOK.COM>
Message-ID: <9973C6784F21124B9C9CD4FD39EA8D8403308A71E5@MAIL02.trilliumsubfab.com>
Hi Joseph -
That does seem like a lot of N2. Are you supposed to include any N2 purge from the pump in those numbers. For example, an Edwards iQDP80 will typically have a ~ 50SLM purge, so in the case of the 3 CFM purge requirement, it's only an additional 30-40 SLM (1-1.5 CFM). All that N2 is going to flow through into the Callisto.
Also, if you are abating a process that requires passivation of the abatement column, that does often require extra N2, so perhaps that where the higher levels are coming from. To be clear, that should process dependent and not always necessary to the best of my knowledge.
My experience with dry abatement using granulate (I believe this how Callisto work) is that there is also an upper limit on N2 as well where too much Nitrogen reduces the residence time of the effluent within the cannister, making the abatement less effective.
There are other options for dry abatement if you are looking for something with lower N2 consumption.
Regards,
Rob Breisch
Vice President, Sales and Marketing
[email logo 3]
Trillium US
My Mobile: 801-726-5035
Trillium Toll Free: 800-453-1340
Email: rob.breisch at trilliumus.com<https://eur01.safelinks.protection.outlook.com/?url=http%3A%2F%2Frob.breisch%40trilliumus.com%2F&data=04%7C01%7Cdoug.smith%40nxp.com%7C6a18a23fd52849ab6e2c08d9a2d36a20%7C686ea1d3bc2b4c6fa92cd99c5c301635%7C0%7C0%7C637719851320585298%7CUnknown%7CTWFpbGZsb3d8eyJWIjoiMC4wLjAwMDAiLCJQIjoiV2luMzIiLCJBTiI6Ik1haWwiLCJXVCI6Mn0%3D%7C1000&sdata=28DKNqx19eklsozNWtmNaSym844LuMy0zetFDNZygeM%3D&reserved=0>
WebSite: www.trilliumus.com<https://eur01.safelinks.protection.outlook.com/?url=http%3A%2F%2Fwww.trilliumus.com%2F&data=04%7C01%7Cdoug.smith%40nxp.com%7C6a18a23fd52849ab6e2c08d9a2d36a20%7C686ea1d3bc2b4c6fa92cd99c5c301635%7C0%7C0%7C637719851320595292%7CUnknown%7CTWFpbGZsb3d8eyJWIjoiMC4wLjAwMDAiLCJQIjoiV2luMzIiLCJBTiI6Ik1haWwiLCJXVCI6Mn0%3D%7C1000&sdata=X54HcYftCFP6zKZ7vzk45e1k%2FRpAfSNZLp4GfLxSYVU%3D&reserved=0>

Requested etch is similar to removing a 10um device silicon layer off an SOI wafer and stopping in BOX layer...

Open to wet or dry etch methods. If wet, single-sided processing is preferred to prevent etching back of wafer, but a tank etch is acceptable if a viable option exists.

Can anyone point me towards a service or lab facility that could perform this etch in low volumes (10-12 wafers/month)?

Thanks for your input.

Randy Parker

Sr. Process Engineer

American Semiconductor, Inc.

208-336-2773, ext 23

All content and attachments are ASI confidential and proprietary.

-------------- next part --------------

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From L.A.Boodhoo at southampton.ac.uk Fri Sep 15 07:05:35 2023

From: L.A.Boodhoo at southampton.ac.uk (Liam Boodhoo)

Date: Fri, 15 Sep 2023 11:05:35 +0000

Subject: [labnetwork] 200mm Bulk Silicon Etch Process Needed

In-Reply-To: <CWXP265MB4876AD07682094985CA19974B0F6A@CWXP265MB4876.GBRP265.PROD.OUTLOOK.COM>

References: <8e0e2b1a35f54bc880b32e27733bfc02@americansemi.com>

<CWXP265MB4876AD07682094985CA19974B0F6A@CWXP265MB4876.GBRP265.PROD.OUTLOOK.COM>

Message-ID: <CWLP265MB6499E5BA157F06FD44E0CFF3F9F6A@CWLP265MB6499.GBRP265.PROD.OUTLOOK.COM>

Hi Randy,

My colleague Owain Clark passed this on to me. My name is Liam Boodhoo, I am the ECSP Commercial Processing Manager at the Southampton Nanofabrication Centre. This looks like something we can possibly help with. Can you confirm a few things for us to be sure?

* Do the wafers have active devices on the other side of the wafer?

* Can we use sacrificial protective layers on the other side?

* Are there any metals that are silicon carrier lifetime killers (like copper for example)?

* Is an edge exclusion acceptable for this process?

If a call is a quicker way to share information, we can set that up.

Many thanks,

Liam

Dr Liam A. Boodhoo

ECSP Commercial Processing Manager

Southampton Nanofabrication Centre

University of Southampton

Southampton

SO17 1BJ

UK

Phone: +44 (0) 23 8059 2650

Email: L.A.Boodhoo at Southampton.ac.uk<mailto:L.A.Boodhoo at Southampton.ac.uk>

From: labnetwork <labnetwork-bounces at mtl.mit.edu<mailto:labnetwork-bounces at mtl.mit.edu>> On Behalf Of Randall Parker

Sent: 14 September 2023 17:41

To: labnetwork at mtl.mit.edu<mailto:labnetwork at mtl.mit.edu>

Subject: [labnetwork] 200mm Bulk Silicon Etch Process Needed

CAUTION: This e-mail originated outside the University of Southampton.

We have a need to etch a thin layer of silicon off of 200mm wafers. The silicon layer is freshly ground and unpatterned. Etch needs to have sufficient oxide selectivity to stop within a buried oxide layer which is 0.2-1.0um thick. Entire silicon layer needs to be removed (ex. no edge exclusion due to clamping ring).

Requested etch is similar to removing a 10um device silicon layer off an SOI wafer and stopping in BOX layer...

Open to wet or dry etch methods. If wet, single-sided processing is preferred to prevent etching back of wafer, but a tank etch is acceptable if a viable option exists.

Can anyone point me towards a service or lab facility that could perform this etch in low volumes (10-12 wafers/month)?

Thanks for your input.

Randy Parker

Sr. Process Engineer

American Semiconductor, Inc.

208-336-2773, ext 23

All content and attachments are ASI confidential and proprietary.

-------------- next part --------------

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From joseph.losby at ucalgary.ca Fri Sep 15 13:33:22 2023

From: joseph.losby at ucalgary.ca (Joseph Losby)

Date: Fri, 15 Sep 2023 17:33:22 +0000

Subject: [labnetwork] Jupiter Callisto abatement system N2 usage

Message-ID: <YT1PR01MB8715EF5760E9C8645401BF308EF6A@YT1PR01MB8715.CANPRD01.PROD.OUTLOOK.COM>

Hi everyone,

According to Critical Systems inc., 18 CFM (7 CFM emergency purge, 3 CFM normal purge, 8 CFM venturi pump) of N2 should be allocated to the Jupiter Callisto abatement system. That seems like a lot to allocate to one piece of equipment. Do any of you have any experience with them, and is this N2 usage realistic? Is there a situation where the normal and emergency purges kick in at the same time?

Cheers,

Joe

Joe Losby, PhD

Manager, qLab Operations

[cid:82a07d3a-2d5b-4c9e-8b72-26fd32fb811b]

Quantum City?s qConnect 2023: Connecting quantum creators and users | Join us November 15-17, 2023 in Calgary, Alberta at Telus Convention Centre. Click here for more information.<https://research.ucalgary.ca/quantum-city/quantum-city/quantum-city/q-connect-2023>

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From rob.breisch at trilliumus.com Fri Sep 15 16:18:18 2023

From: rob.breisch at trilliumus.com (Rob Breisch)

Date: Fri, 15 Sep 2023 20:18:18 +0000

Subject: [labnetwork] Jupiter Callisto abatement system N2 usage

In-Reply-To: <YT1PR01MB8715EF5760E9C8645401BF308EF6A@YT1PR01MB8715.CANPRD01.PROD.OUTLOOK.COM>

References: <YT1PR01MB8715EF5760E9C8645401BF308EF6A@YT1PR01MB8715.CANPRD01.PROD.OUTLOOK.COM>

Message-ID: <9973C6784F21124B9C9CD4FD39EA8D8403308A71E5@MAIL02.trilliumsubfab.com>

Hi Joseph -

That does seem like a lot of N2. Are you supposed to include any N2 purge from the pump in those numbers. For example, an Edwards iQDP80 will typically have a ~ 50SLM purge, so in the case of the 3 CFM purge requirement, it's only an additional 30-40 SLM (1-1.5 CFM). All that N2 is going to flow through into the Callisto.

Also, if you are abating a process that requires passivation of the abatement column, that does often require extra N2, so perhaps that where the higher levels are coming from. To be clear, that should process dependent and not always necessary to the best of my knowledge.

My experience with dry abatement using granulate (I believe this how Callisto work) is that there is also an upper limit on N2 as well where too much Nitrogen reduces the residence time of the effluent within the cannister, making the abatement less effective.

There are other options for dry abatement if you are looking for something with lower N2 consumption.

Regards,

Rob Breisch

Vice President, Sales and Marketing

[email logo 3]

Trillium US

My Mobile: 801-726-5035

Trillium Toll Free: 800-453-1340

Email: rob.breisch at trilliumus.com<https://eur01.safelinks.protection.outlook.com/?url=http%3A%2F%2Frob.breisch%40trilliumus.com%2F&data=04%7C01%7Cdoug.smith%40nxp.com%7C6a18a23fd52849ab6e2c08d9a2d36a20%7C686ea1d3bc2b4c6fa92cd99c5c301635%7C0%7C0%7C637719851320585298%7CUnknown%7CTWFpbGZsb3d8eyJWIjoiMC4wLjAwMDAiLCJQIjoiV2luMzIiLCJBTiI6Ik1haWwiLCJXVCI6Mn0%3D%7C1000&sdata=28DKNqx19eklsozNWtmNaSym844LuMy0zetFDNZygeM%3D&reserved=0>

WebSite: www.trilliumus.com<https://eur01.safelinks.protection.outlook.com/?url=http%3A%2F%2Fwww.trilliumus.com%2F&data=04%7C01%7Cdoug.smith%40nxp.com%7C6a18a23fd52849ab6e2c08d9a2d36a20%7C686ea1d3bc2b4c6fa92cd99c5c301635%7C0%7C0%7C637719851320595292%7CUnknown%7CTWFpbGZsb3d8eyJWIjoiMC4wLjAwMDAiLCJQIjoiV2luMzIiLCJBTiI6Ik1haWwiLCJXVCI6Mn0%3D%7C1000&sdata=X54HcYftCFP6zKZ7vzk45e1k%2FRpAfSNZLp4GfLxSYVU%3D&reserved=0>