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In-Reply-To: <DA25159AE3245C4F9094656F663E84D20906AB5ADF@USFMAIL2.forest.usf.edu> |
References: <DA25159AE3245C4F9094656F663E84D20906AB5ADF@USFMAIL2.forest.usf.edu> |
Message-ID: <4C697B0A.7060209@eecs.berkeley.edu> |
Richard Everly, |
A couple of decades ago I did a fair amount of work with |
sapphire substrates, bonding these to glass for optical |
windows in the DUV. For glass work I had to make sure the |
sapphire face was cut on the correct axis to assure both x |
and y directions had the same COE. |
You should have no issues with chemical attack. There are no |
known liquid etchants for sapphire at standard process bath |
temps. |
Si processing temps do not exceed the melting point of |
sapphire susbstrates. These substrates can be run to 1250 C |
without issue. |
Assuming a reasonably thin wafer (~ 1mm) standard handling |
will not represent a thermal shock issue. |
Bob Hamilton |
Robert Hamilton |
University of California at Berkeley |
Nanolab Equipment Engineering Manager |
Rm406 Cory Hall |
Berkeley, CA 94720-1770 |
510-642-2716 |
510-642-2916 (Fax) |
510-325-7557 (Cell) |
bob at silicon2.eecs.berkeley.edu |
On 8/16/2010 10:37 AM, Everly, Richard wrote: |
> I have researcher that wants to grow a thermal oxide on 6000Ang epi layer on sapphire substrate. I have no experience with this material and the documentation seems to be scarce. I don't want to burn up the substrate by doing something foolish as they very expensive. any help would be greatly appreciated! |
> |
> 1. is this material process compatible with standard silicon processes, can I use the same tube as I do my regular dry oxidation and not worry about contamination. |
> |
> 2. What heat-up and cool-down rates should I use, and are there any temp limits I need to be aware of? I've read that thermal expansion can be a problem. |
> |
> 3. Can I use the RCA clean process? I'm worried about the SC1 solution attacking the Sapphire. |
> |
> |
> Richard Everly |
> Cleanroom Engineer |
> Nanotechnology Research and Education Center (NREC) |
> University of South Florida |
> NREC, ENB118 |
> 4202 E. Fowler Ave. |
> Tampa, FL 33620 |
> |
> Office: 813-974-5365 |
> Fax: 813-974-3610 |
> |
> |
> |
> _______________________________________________ |
> labnetwork mailing list |
> labnetwork at mtl.mit.edu |
> https://www-mtl.mit.edu/mailman/listinfo.cgi/labnetwork |
From D.Lloyd at lboro.ac.uk Mon Aug 16 16:52:42 2010 |
From: D.Lloyd at lboro.ac.uk (Daniel Lloyd) |
Date: Mon, 16 Aug 2010 21:52:42 +0100 |
Subject: [labnetwork] Thermal conductivity in plasma chamber |
In-Reply-To: <4C697B0A.7060209@eecs.berkeley.edu> |
References: <DA25159AE3245C4F9094656F663E84D20906AB5ADF@USFMAIL2.forest.usf.edu> |
<4C697B0A.7060209@eecs.berkeley.edu> |
Message-ID: <64991842D0A7F147A88769E6A143A9F2038C9FACBC@STAFFMBX-1.lunet.lboro.ac.uk> |
Hi all, |
I currently use a vacuum grease to promote thermal conductivity in a RIE chamber but unfortunately it seems to react badly with fused silica (SiO2). This results in a dirty film being left on the surface of the substrate which is very hard (verging on impossible) to remove). Can anyone suggest a replacement which won't... |
Thanks, |
Daniel |
From bob at eecs.berkeley.edu Tue Aug 17 12:02:00 2010 |
From: bob at eecs.berkeley.edu (Bob Hamilton) |
Date: Tue, 17 Aug 2010 09:02:00 -0700 |
Subject: [labnetwork] Thermal conductivity in plasma chamber |
In-Reply-To: <64991842D0A7F147A88769E6A143A9F2038C9FACBC@STAFFMBX-1.lunet.lboro.ac.uk> |
References: <DA25159AE3245C4F9094656F663E84D20906AB5ADF@USFMAIL2.forest.usf.edu> |
<4C697B0A.7060209@eecs.berkeley.edu> |
<64991842D0A7F147A88769E6A143A9F2038C9FACBC@STAFFMBX-1.lunet.lboro.ac.uk> |
Message-ID: <4C6AB278.6050601@eecs.berkeley.edu> |
The Microlab has been using thermal grease, CGR7016, |
Cool-Grease 7016, 50gram jar available from: |
http://www.aitechnology.com/store/ |
This grease is used in an STS/Bosch Si etch process. I have |
no information to offer about its interactions with SiO2. |
We also make our own thermal paste from Santovac V |
(polyphenol ether) and aluminum powder for use in our |
ionmill. Santovac V has an exceptionally low vapor pressure |
and is soluble in acetone, post-milling (perhaps boron |
ntirde would be a better additive than aluminum)? Also, a |
thin film of Santovac may be enough without a filler. |
http://www.2spi.com/catalog/vac/santovac-5-vacuum-grease.shtml |
Bob Hamilton |
Robert Hamilton |
University of California at Berkeley |
Nanolab Equipment Engineering Manager |
Rm406 Cory Hall |
Berkeley, CA 94720-1770 |
510-642-2716 |
510-642-2916 (Fax) |
510-325-7557 (Cell) |
bob at silicon2.eecs.berkeley.edu |
On 8/16/2010 1:52 PM, Daniel Lloyd wrote: |
> Hi all, |
> |
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