task stringclasses 3
values | input unknown | output unknown |
|---|---|---|
normalize | "EDTA ; \"mol/L\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00033"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 2.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00034: phosphoric acid 27.1weight percent, + EDTA 1.03%, 25C/120s. etch 397.3 nm/min." | {
"record_id": "SYN-00034",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 27.1,
"unit": "wt%"
}
},
... |
normalize | "EDTA ; \"M\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00034"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 27.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00035: phosphoric acid 13.1wt%, + EDTA 1.95%, 50C/120s. etch 293.6 nm/min." | {
"record_id": "SYN-00035",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 13.1,
"unit": "wt%"
}
},... |
normalize | "EDTA ; \"molar\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00035"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 13.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00036: hydrogen peroxide 17.5wt%, + imidazole 0.7%, 50C/60s. etch 471.5 nm/min." | {
"record_id": "SYN-00036",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 17.5,
"unit": "wt%"
}
},
{... |
normalize | "imidazole ; \"M\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00036"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 17.5wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00037: acetic acid 9.3wt%, + 5-methylbenzotriazole 1.67%, 25C/30s. etch 241.2 nm/min." | {
"record_id": "SYN-00037",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 9.3,
"unit": "wt%"
}
},
{
... |
normalize | "5-methylbenzotriazole ; \"molar\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00037"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 9.3wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00038: acetic acid 12.9%w/w, + 5-methylbenzotriazole 1.24%, 50C/60s. etch 24.5 nm/min." | {
"record_id": "SYN-00038",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 12.9,
"unit": "wt%"
}
},
{
... |
normalize | "5-methylbenzotriazole ; \"M\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00038"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 12.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00039: acetic acid 21.3%w/w, + imidazole 1.32%, 30C/60s. etch 391.9 nm/min." | {
"record_id": "SYN-00039",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 21.3,
"unit": "wt%"
}
},
{... |
normalize | "imidazole ; \"mol/L\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00039"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 21.3wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00040: acetic acid 4.6%w/w, + imidazole 1.38%, 40C/30s. etch 479.3 nm/min." | {
"record_id": "SYN-00040",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 4.6,
"unit": "wt%"
}
},
{
... |
normalize | "imidazole ; \"M\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00040"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 4.6wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00041: acetic acid 23.7wt%, + 5-methylbenzotriazole 0.92%, 30C/60s. etch 178.9 nm/min." | {
"record_id": "SYN-00041",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 23.7,
"unit": "wt%"
}
},
{... |
normalize | "5-methylbenzotriazole ; \"mol/L\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00041"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 23.7wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00042: phosphoric acid 20.3%w/w, + benzotriazole 1.17%, 30C/30s. etch 47.6 nm/min." | {
"record_id": "SYN-00042",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 20.3,
"unit": "wt%"
}
},... |
normalize | "benzotriazole ; \"molar\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00042"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 20.3wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00043: phosphoric acid 28.4%w/w, + EDTA 0.33%, 50C/30s. etch 467.9 nm/min." | {
"record_id": "SYN-00043",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 28.4,
"unit": "wt%"
}
},
... |
normalize | "EDTA ; \"M\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00043"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 28.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00044: phosphoric acid 13.1weight percent, + tetrazole 1.02%, 40C/120s. etch 127.0 nm/min." | {
"record_id": "SYN-00044",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 13.1,
"unit": "wt%"
}
},... |
normalize | "tetrazole ; \"mol/L\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00044"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 13.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00045: hydrogen peroxide 24.8%w/w, + benzotriazole 0.19%, 30C/30s. etch 2.6 nm/min." | {
"record_id": "SYN-00045",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 24.8,
"unit": "wt%"
}
},
... |
normalize | "benzotriazole ; \"M\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00045"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 24.8wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00046: phosphoric acid 1.7wt%, + imidazole 1.23%, 30C/30s. etch 227.6 nm/min." | {
"record_id": "SYN-00046",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 1.7000000000000002,
"unit": "wt%"
... |
normalize | "imidazole ; \"M\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00046"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 1.7wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00047: phosphoric acid 28.9weight percent, + imidazole 0.63%, 40C/30s. etch 296.9 nm/min." | {
"record_id": "SYN-00047",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 28.9,
"unit": "wt%"
}
},
... |
normalize | "imidazole ; \"M\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00047"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 28.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00048: hydrogen peroxide 15.7weight percent, + 5-methylbenzotriazole 0.51%, 30C/60s. etch 186.9 nm/min." | {
"record_id": "SYN-00048",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 15.7,
"unit": "wt%"
}
},
{
... |
normalize | "5-methylbenzotriazole ; \"M\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00048"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 15.7wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00049: acetic acid 13.2weight percent, + benzotriazole 1.12%, 30C/120s. etch 211.7 nm/min." | {
"record_id": "SYN-00049",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 13.2,
"unit": "wt%"
}
},
{... |
normalize | "benzotriazole ; \"molar\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00049"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 13.2wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00050: acetic acid 12.9wt%, + benzotriazole 0.86%, 40C/60s. etch 102.8 nm/min." | {
"record_id": "SYN-00050",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 12.9,
"unit": "wt%"
}
},
{
... |
normalize | "benzotriazole ; \"mol/L\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00050"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 12.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00051: hydrogen peroxide 21.0weight percent, + EDTA 1.6%, 50C/60s. etch 93.5 nm/min." | {
"record_id": "SYN-00051",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 21,
"unit": "wt%"
}
},
{
... |
normalize | "EDTA ; \"molar\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00051"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 21.0wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00052: hydrogen peroxide 19.3weight percent, + imidazole 0.22%, 30C/60s. etch 1.9 nm/min." | {
"record_id": "SYN-00052",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 19.3,
"unit": "wt%"
}
},
{
... |
normalize | "imidazole ; \"M\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00052"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 19.3wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00053: acetic acid 18.7weight percent, + imidazole 0.88%, 50C/30s. etch 339.4 nm/min." | {
"record_id": "SYN-00053",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 18.7,
"unit": "wt%"
}
},
{
... |
normalize | "imidazole ; \"molar\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00053"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 18.7wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00054: hydrogen peroxide 26.6weight percent, + benzotriazole 0.13%, 40C/60s. etch 263.5 nm/min." | {
"record_id": "SYN-00054",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 26.6,
"unit": "wt%"
}
},
{
... |
normalize | "benzotriazole ; \"mol/L\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00054"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 26.6wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00055: phosphoric acid 3.5wt%, + 5-methylbenzotriazole 0.19%, 40C/60s. etch 267.3 nm/min." | {
"record_id": "SYN-00055",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 3.5,
"unit": "wt%"
}
},
... |
normalize | "5-methylbenzotriazole ; \"M\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00055"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 3.5wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00056: phosphoric acid 16.1weight percent, + imidazole 1.17%, 30C/120s. etch 53.5 nm/min." | {
"record_id": "SYN-00056",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 16.1,
"unit": "wt%"
}
},
... |
normalize | "imidazole ; \"mol/L\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00056"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 16.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00057: phosphoric acid 19.2%w/w, + imidazole 0.36%, 25C/60s. etch 201.2 nm/min." | {
"record_id": "SYN-00057",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 19.2,
"unit": "wt%"
}
},... |
normalize | "imidazole ; \"mol/L\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00057"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 19.2wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00058: acetic acid 14.8wt%, + tetrazole 1.4%, 40C/60s. etch 326.4 nm/min." | {
"record_id": "SYN-00058",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 14.8,
"unit": "wt%"
}
},
{... |
normalize | "tetrazole ; \"molar\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00058"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 14.8wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00059: hydrogen peroxide 14.7%w/w, + benzotriazole 1.78%, 25C/120s. etch 489.5 nm/min." | {
"record_id": "SYN-00059",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 14.7,
"unit": "wt%"
}
},
{
... |
normalize | "benzotriazole ; \"mol/L\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00059"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 14.7wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00060: hydrogen peroxide 4.4weight percent, + imidazole 0.06%, 40C/120s. etch 350.1 nm/min." | {
"record_id": "SYN-00060",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 4.4,
"unit": "wt%"
}
},
... |
normalize | "imidazole ; \"M\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00060"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 4.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00061: hydrogen peroxide 21.8wt%, + tetrazole 0.8%, 40C/60s. etch 324.4 nm/min." | {
"record_id": "SYN-00061",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 21.8,
"unit": "wt%"
}
},
{
... |
normalize | "tetrazole ; \"molar\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00061"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 21.8wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00062: phosphoric acid 27.4wt%, + 5-methylbenzotriazole 0.92%, 50C/60s. etch 403.6 nm/min." | {
"record_id": "SYN-00062",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 27.4,
"unit": "wt%"
}
... |
normalize | "5-methylbenzotriazole ; \"molar\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00062"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 27.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00063: acetic acid 2.0%w/w, + benzotriazole 1.28%, 30C/60s. etch 29.4 nm/min." | {
"record_id": "SYN-00063",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 2,
"unit": "wt%"
}
},
{
... |
normalize | "benzotriazole ; \"M\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00063"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 2.0wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00064: acetic acid 23.4%w/w, + EDTA 1.77%, 50C/60s. etch 27.9 nm/min." | {
"record_id": "SYN-00064",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 23.4,
"unit": "wt%"
}
},
{
... |
normalize | "EDTA ; \"molar\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00064"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 23.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00065: phosphoric acid 15.2%w/w, + EDTA 1.42%, 30C/60s. etch 133.7 nm/min." | {
"record_id": "SYN-00065",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 15.2,
"unit": "wt%"
}
},
... |
normalize | "EDTA ; \"M\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00065"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 15.2wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00066: hydrogen peroxide 20.7wt%, + benzotriazole 1.94%, 50C/120s. etch 460.8 nm/min." | {
"record_id": "SYN-00066",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 20.7,
"unit": "wt%"
}
},
{
... |
normalize | "benzotriazole ; \"mol/L\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
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