task stringclasses 3
values | input unknown | output unknown |
|---|---|---|
explain | {
"result": "BO recommendation",
"record": "SYN-00066"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 20.7wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00067: phosphoric acid 26.9wt%, + EDTA 0.55%, 25C/30s. etch 185.0 nm/min." | {
"record_id": "SYN-00067",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 26.9,
"unit": "wt%"
}
},
... |
normalize | "EDTA ; \"mol/L\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00067"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 26.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00068: acetic acid 16.0wt%, + imidazole 0.8%, 50C/60s. etch 436.1 nm/min." | {
"record_id": "SYN-00068",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 16,
"unit": "wt%"
}
},
{
... |
normalize | "imidazole ; \"mol/L\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00068"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 16.0wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00069: phosphoric acid 27.6wt%, + tetrazole 0.85%, 50C/60s. etch 220.6 nm/min." | {
"record_id": "SYN-00069",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 27.6,
"unit": "wt%"
}
... |
normalize | "tetrazole ; \"mol/L\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00069"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 27.6wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00070: hydrogen peroxide 3.2weight percent, + tetrazole 0.88%, 50C/30s. etch 479.5 nm/min." | {
"record_id": "SYN-00070",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 3.2,
"unit": "wt%"
}
},
{
... |
normalize | "tetrazole ; \"mol/L\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00070"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 3.2wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00071: phosphoric acid 17.2weight percent, + tetrazole 0.61%, 30C/120s. etch 149.0 nm/min." | {
"record_id": "SYN-00071",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 17.2,
"unit": "wt%"
}
... |
normalize | "tetrazole ; \"mol/L\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00071"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 17.2wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00072: hydrogen peroxide 18.8wt%, + benzotriazole 1.44%, 30C/120s. etch 207.9 nm/min." | {
"record_id": "SYN-00072",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 18.8,
"unit": "wt%"
}
},
... |
normalize | "benzotriazole ; \"molar\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00072"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 18.8wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00073: acetic acid 25.9%w/w, + EDTA 0.29%, 40C/30s. etch 485.6 nm/min." | {
"record_id": "SYN-00073",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 25.9,
"unit": "wt%"
}
},
{
... |
normalize | "EDTA ; \"molar\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00073"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 25.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00074: phosphoric acid 25.1wt%, + 5-methylbenzotriazole 0.52%, 40C/120s. etch 164.3 nm/min." | {
"record_id": "SYN-00074",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 25.1,
"unit": "wt%"
}
},... |
normalize | "5-methylbenzotriazole ; \"M\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00074"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 25.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00075: acetic acid 11.6wt%, + EDTA 1.29%, 30C/60s. etch 78.5 nm/min." | {
"record_id": "SYN-00075",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 11.6,
"unit": "wt%"
}
},
{
... |
normalize | "EDTA ; \"mol/L\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00075"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 11.6wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00076: acetic acid 22.2%w/w, + 5-methylbenzotriazole 1.64%, 50C/60s. etch 304.6 nm/min." | {
"record_id": "SYN-00076",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 22.2,
"unit": "wt%"
}
},
{... |
normalize | "5-methylbenzotriazole ; \"M\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00076"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 22.2wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00077: acetic acid 15.2weight percent, + EDTA 0.65%, 30C/120s. etch 326.7 nm/min." | {
"record_id": "SYN-00077",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 15.2,
"unit": "wt%"
}
},
{
... |
normalize | "EDTA ; \"molar\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00077"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 15.2wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00078: phosphoric acid 5.0%w/w, + benzotriazole 0.83%, 30C/60s. etch 392.9 nm/min." | {
"record_id": "SYN-00078",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 5,
"unit": "wt%"
}
},
... |
normalize | "benzotriazole ; \"molar\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00078"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 5.0wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00079: hydrogen peroxide 20.4wt%, + imidazole 1.34%, 30C/60s. etch 172.7 nm/min." | {
"record_id": "SYN-00079",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 20.4,
"unit": "wt%"
}
},
{
... |
normalize | "imidazole ; \"molar\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00079"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 20.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00080: acetic acid 1.6wt%, + 5-methylbenzotriazole 1.27%, 25C/30s. etch 23.4 nm/min." | {
"record_id": "SYN-00080",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 1.6,
"unit": "wt%"
}
},
{
... |
normalize | "5-methylbenzotriazole ; \"mol/L\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00080"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 1.6wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00081: acetic acid 26.9%w/w, + tetrazole 0.47%, 50C/30s. etch 179.7 nm/min." | {
"record_id": "SYN-00081",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 26.9,
"unit": "wt%"
}
},
{... |
normalize | "tetrazole ; \"mol/L\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00081"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 26.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00082: phosphoric acid 26.8%w/w, + benzotriazole 1.09%, 50C/30s. etch 282.8 nm/min." | {
"record_id": "SYN-00082",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 26.8,
"unit": "wt%"
}
},
... |
normalize | "benzotriazole ; \"M\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00082"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 26.8wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00083: acetic acid 21.3%w/w, + EDTA 0.21%, 30C/30s. etch 124.2 nm/min." | {
"record_id": "SYN-00083",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 21.3,
"unit": "wt%"
}
},
{
... |
normalize | "EDTA ; \"molar\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00083"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 21.3wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00084: hydrogen peroxide 27.9%w/w, + benzotriazole 1.22%, 50C/120s. etch 75.9 nm/min." | {
"record_id": "SYN-00084",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 27.9,
"unit": "wt%"
}
},
{
... |
normalize | "benzotriazole ; \"mol/L\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00084"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 27.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00085: hydrogen peroxide 3.6weight percent, + benzotriazole 0.62%, 30C/60s. etch 118.8 nm/min." | {
"record_id": "SYN-00085",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 3.6,
"unit": "wt%"
}
},
{
... |
normalize | "benzotriazole ; \"mol/L\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00085"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 3.6wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00086: phosphoric acid 16.4weight percent, + benzotriazole 0.61%, 50C/30s. etch 386.7 nm/min." | {
"record_id": "SYN-00086",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 16.4,
"unit": "wt%"
}
},
... |
normalize | "benzotriazole ; \"mol/L\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00086"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 16.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00087: acetic acid 11.1weight percent, + benzotriazole 0.15%, 40C/120s. etch 497.8 nm/min." | {
"record_id": "SYN-00087",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 11.1,
"unit": "wt%"
}
},
{
... |
normalize | "benzotriazole ; \"molar\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00087"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 11.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00088: hydrogen peroxide 10.9wt%, + EDTA 1.96%, 40C/30s. etch 58.9 nm/min." | {
"record_id": "SYN-00088",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 10.9,
"unit": "wt%"
}
},
{... |
normalize | "EDTA ; \"molar\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00088"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 10.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00089: acetic acid 26.4wt%, + EDTA 0.37%, 30C/60s. etch 423.3 nm/min." | {
"record_id": "SYN-00089",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 26.4,
"unit": "wt%"
}
},
{
... |
normalize | "EDTA ; \"mol/L\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00089"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 26.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00090: phosphoric acid 9.5weight percent, + imidazole 1.01%, 50C/120s. etch 216.1 nm/min." | {
"record_id": "SYN-00090",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 9.5,
"unit": "wt%"
}
},
... |
normalize | "imidazole ; \"M\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00090"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 9.5wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00091: phosphoric acid 14.9wt%, + benzotriazole 1.9%, 40C/120s. etch 306.5 nm/min." | {
"record_id": "SYN-00091",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 14.9,
"unit": "wt%"
}
},... |
normalize | "benzotriazole ; \"molar\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00091"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 14.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00092: hydrogen peroxide 19.5%w/w, + benzotriazole 1.18%, 50C/60s. etch 133.6 nm/min." | {
"record_id": "SYN-00092",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 19.5,
"unit": "wt%"
}
},
{... |
normalize | "benzotriazole ; \"mol/L\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00092"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 19.5wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00093: phosphoric acid 17.1wt%, + EDTA 1.98%, 30C/120s. etch 391.5 nm/min." | {
"record_id": "SYN-00093",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 17.1,
"unit": "wt%"
}
},... |
normalize | "EDTA ; \"molar\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00093"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 17.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00094: acetic acid 11.5%w/w, + EDTA 1.9%, 50C/120s. etch 307.5 nm/min." | {
"record_id": "SYN-00094",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 11.5,
"unit": "wt%"
}
},
{
... |
normalize | "EDTA ; \"M\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00094"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 11.5wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00095: acetic acid 11.3weight percent, + 5-methylbenzotriazole 1.42%, 25C/120s. etch 367.9 nm/min." | {
"record_id": "SYN-00095",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 11.3,
"unit": "wt%"
}
},
{
... |
normalize | "5-methylbenzotriazole ; \"M\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00095"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 11.3wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00096: acetic acid 22.6weight percent, + tetrazole 0.93%, 25C/30s. etch 83.1 nm/min." | {
"record_id": "SYN-00096",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 22.6,
"unit": "wt%"
}
},
{... |
normalize | "tetrazole ; \"mol/L\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00096"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 22.6wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00097: phosphoric acid 10.5%w/w, + imidazole 0.65%, 50C/30s. etch 381.5 nm/min." | {
"record_id": "SYN-00097",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 10.5,
"unit": "wt%"
}
},... |
normalize | "imidazole ; \"molar\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00097"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 10.5wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00098: acetic acid 26.5wt%, + tetrazole 0.12%, 50C/60s. etch 415.1 nm/min." | {
"record_id": "SYN-00098",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 26.5,
"unit": "wt%"
}
},
{
... |
normalize | "tetrazole ; \"mol/L\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00098"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 26.5wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00099: phosphoric acid 2.2wt%, + EDTA 1.15%, 40C/60s. etch 3.2 nm/min." | {
"record_id": "SYN-00099",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 2.2,
"unit": "wt%"
}
... |
normalize | "EDTA ; \"mol/L\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00099"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 2.2wt%, vary inhibitor +/-0.2wt%." |
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