task stringclasses 3
values | input unknown | output unknown |
|---|---|---|
extract | "Exp SYN-00100: hydrogen peroxide 27.3wt%, + imidazole 1.97%, 40C/60s. etch 335.8 nm/min." | {
"record_id": "SYN-00100",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 27.3,
"unit": "wt%"
}
},
{
... |
normalize | "imidazole ; \"M\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00100"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 27.3wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00101: hydrogen peroxide 21.5%w/w, + 5-methylbenzotriazole 1.45%, 25C/120s. etch 412.1 nm/min." | {
"record_id": "SYN-00101",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 21.5,
"unit": "wt%"
}
},
{
... |
normalize | "5-methylbenzotriazole ; \"mol/L\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00101"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 21.5wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00102: hydrogen peroxide 24.6weight percent, + imidazole 0.21%, 30C/60s. etch 101.6 nm/min." | {
"record_id": "SYN-00102",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 24.6,
"unit": "wt%"
}
},
{... |
normalize | "imidazole ; \"molar\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00102"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 24.6wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00103: phosphoric acid 17.0wt%, + 5-methylbenzotriazole 0.13%, 30C/120s. etch 256.6 nm/min." | {
"record_id": "SYN-00103",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 17,
"unit": "wt%"
}
},
... |
normalize | "5-methylbenzotriazole ; \"molar\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00103"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 17.0wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00104: phosphoric acid 24.6%w/w, + EDTA 1.07%, 40C/120s. etch 68.3 nm/min." | {
"record_id": "SYN-00104",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 24.6,
"unit": "wt%"
}
... |
normalize | "EDTA ; \"mol/L\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00104"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 24.6wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00105: hydrogen peroxide 13.4wt%, + benzotriazole 0.74%, 50C/60s. etch 416.9 nm/min." | {
"record_id": "SYN-00105",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 13.4,
"unit": "wt%"
}
},
... |
normalize | "benzotriazole ; \"M\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00105"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 13.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00106: phosphoric acid 22.3wt%, + benzotriazole 0.09%, 30C/30s. etch 207.5 nm/min." | {
"record_id": "SYN-00106",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 22.3,
"unit": "wt%"
}
... |
normalize | "benzotriazole ; \"molar\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00106"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 22.3wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00107: acetic acid 27.6weight percent, + 5-methylbenzotriazole 1.86%, 50C/30s. etch 220.9 nm/min." | {
"record_id": "SYN-00107",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 27.6,
"unit": "wt%"
}
},
{
... |
normalize | "5-methylbenzotriazole ; \"molar\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00107"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 27.6wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00108: phosphoric acid 1.9weight percent, + tetrazole 1.61%, 30C/60s. etch 33.0 nm/min." | {
"record_id": "SYN-00108",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 1.9,
"unit": "wt%"
}
... |
normalize | "tetrazole ; \"molar\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00108"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 1.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00109: acetic acid 14.2weight percent, + benzotriazole 1.13%, 50C/60s. etch 41.1 nm/min." | {
"record_id": "SYN-00109",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 14.2,
"unit": "wt%"
}
},
{
... |
normalize | "benzotriazole ; \"M\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00109"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 14.2wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00110: acetic acid 25.3weight percent, + EDTA 0.21%, 40C/30s. etch 236.2 nm/min." | {
"record_id": "SYN-00110",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 25.3,
"unit": "wt%"
}
},
{... |
normalize | "EDTA ; \"M\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00110"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 25.3wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00111: hydrogen peroxide 5.5%w/w, + tetrazole 1.12%, 30C/30s. etch 88.1 nm/min." | {
"record_id": "SYN-00111",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 5.5,
"unit": "wt%"
}
},
{
... |
normalize | "tetrazole ; \"mol/L\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00111"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 5.5wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00112: hydrogen peroxide 20.7weight percent, + tetrazole 0.14%, 30C/120s. etch 141.5 nm/min." | {
"record_id": "SYN-00112",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 20.7,
"unit": "wt%"
}
},
{... |
normalize | "tetrazole ; \"mol/L\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00112"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 20.7wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00113: phosphoric acid 12.2wt%, + EDTA 1.55%, 30C/120s. etch 3.8 nm/min." | {
"record_id": "SYN-00113",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 12.2,
"unit": "wt%"
}
... |
normalize | "EDTA ; \"M\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00113"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 12.2wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00114: phosphoric acid 2.1wt%, + EDTA 1.57%, 25C/120s. etch 306.1 nm/min." | {
"record_id": "SYN-00114",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 2.1,
"unit": "wt%"
}
... |
normalize | "EDTA ; \"mol/L\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00114"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 2.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00115: phosphoric acid 10.7%w/w, + EDTA 0.53%, 30C/60s. etch 255.6 nm/min." | {
"record_id": "SYN-00115",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 10.7,
"unit": "wt%"
}
},... |
normalize | "EDTA ; \"mol/L\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00115"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 10.7wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00116: hydrogen peroxide 8.1weight percent, + tetrazole 0.79%, 50C/30s. etch 323.0 nm/min." | {
"record_id": "SYN-00116",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 8.1,
"unit": "wt%"
}
},
{
... |
normalize | "tetrazole ; \"molar\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00116"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 8.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00117: phosphoric acid 18.5wt%, + EDTA 1.57%, 30C/60s. etch 21.1 nm/min." | {
"record_id": "SYN-00117",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 18.5,
"unit": "wt%"
}
... |
normalize | "EDTA ; \"molar\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00117"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 18.5wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00118: hydrogen peroxide 12.4weight percent, + 5-methylbenzotriazole 1.55%, 50C/60s. etch 462.4 nm/min." | {
"record_id": "SYN-00118",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 12.4,
"unit": "wt%"
}
},
{... |
normalize | "5-methylbenzotriazole ; \"mol/L\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00118"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 12.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00119: phosphoric acid 27.6wt%, + 5-methylbenzotriazole 1.74%, 25C/60s. etch 173.4 nm/min." | {
"record_id": "SYN-00119",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 27.6,
"unit": "wt%"
}
},... |
normalize | "5-methylbenzotriazole ; \"M\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00119"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 27.6wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00120: phosphoric acid 17.9wt%, + 5-methylbenzotriazole 0.63%, 25C/60s. etch 276.2 nm/min." | {
"record_id": "SYN-00120",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 17.9,
"unit": "wt%"
}
},... |
normalize | "5-methylbenzotriazole ; \"mol/L\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00120"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 17.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00121: hydrogen peroxide 18.8weight percent, + 5-methylbenzotriazole 0.37%, 50C/120s. etch 199.8 nm/min." | {
"record_id": "SYN-00121",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 18.8,
"unit": "wt%"
}
},
... |
normalize | "5-methylbenzotriazole ; \"molar\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00121"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 18.8wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00122: acetic acid 5.9%w/w, + EDTA 0.45%, 30C/30s. etch 263.1 nm/min." | {
"record_id": "SYN-00122",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 5.9,
"unit": "wt%"
}
},
{
... |
normalize | "EDTA ; \"mol/L\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00122"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 5.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00123: acetic acid 4.4%w/w, + imidazole 1.93%, 50C/60s. etch 449.7 nm/min." | {
"record_id": "SYN-00123",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 4.4,
"unit": "wt%"
}
},
{
... |
normalize | "imidazole ; \"M\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00123"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 4.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00124: phosphoric acid 7.8weight percent, + EDTA 1.83%, 50C/60s. etch 195.7 nm/min." | {
"record_id": "SYN-00124",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 7.8,
"unit": "wt%"
}
},
... |
normalize | "EDTA ; \"M\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00124"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 7.8wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00125: acetic acid 1.1%w/w, + 5-methylbenzotriazole 1.21%, 25C/120s. etch 389.9 nm/min." | {
"record_id": "SYN-00125",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 1.1,
"unit": "wt%"
}
},
{
... |
normalize | "5-methylbenzotriazole ; \"M\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00125"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 1.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00126: phosphoric acid 11.9weight percent, + EDTA 1.6%, 25C/30s. etch 446.3 nm/min." | {
"record_id": "SYN-00126",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 11.9,
"unit": "wt%"
}
... |
normalize | "EDTA ; \"mol/L\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00126"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 11.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00127: acetic acid 15.1wt%, + imidazole 1.56%, 30C/120s. etch 276.3 nm/min." | {
"record_id": "SYN-00127",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 15.1,
"unit": "wt%"
}
},
{
... |
normalize | "imidazole ; \"M\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00127"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 15.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00128: acetic acid 12.9wt%, + 5-methylbenzotriazole 1.34%, 50C/120s. etch 342.2 nm/min." | {
"record_id": "SYN-00128",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 12.9,
"unit": "wt%"
}
},
{
... |
normalize | "5-methylbenzotriazole ; \"mol/L\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00128"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 12.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00129: acetic acid 28.0weight percent, + benzotriazole 0.22%, 50C/60s. etch 117.3 nm/min." | {
"record_id": "SYN-00129",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 28,
"unit": "wt%"
}
},
{
... |
normalize | "benzotriazole ; \"molar\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00129"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 28.0wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00130: phosphoric acid 12.4weight percent, + EDTA 0.57%, 30C/120s. etch 182.8 nm/min." | {
"record_id": "SYN-00130",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 12.4,
"unit": "wt%"
}
},... |
normalize | "EDTA ; \"M\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00130"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 12.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00131: hydrogen peroxide 17.4wt%, + tetrazole 0.85%, 25C/60s. etch 241.7 nm/min." | {
"record_id": "SYN-00131",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 17.4,
"unit": "wt%"
}
},
{
... |
normalize | "tetrazole ; \"M\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00131"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 17.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00132: acetic acid 5.0%w/w, + benzotriazole 1.14%, 25C/30s. etch 431.2 nm/min." | {
"record_id": "SYN-00132",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 5,
"unit": "wt%"
}
},
{
... |
normalize | "benzotriazole ; \"M\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00132"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 5.0wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00133: phosphoric acid 26.4wt%, + EDTA 0.72%, 25C/120s. etch 3.6 nm/min." | {
"record_id": "SYN-00133",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 26.4,
"unit": "wt%"
}
},
... |
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