task stringclasses 3
values | input unknown | output unknown |
|---|---|---|
explain | {
"result": "BO recommendation",
"record": "SYN-00166"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 2.6wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00167: hydrogen peroxide 5.9wt%, + tetrazole 0.15%, 50C/60s. etch 16.3 nm/min." | {
"record_id": "SYN-00167",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 5.9,
"unit": "wt%"
}
},
{
... |
normalize | "tetrazole ; \"mol/L\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00167"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 5.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00168: hydrogen peroxide 13.0wt%, + imidazole 1.08%, 50C/60s. etch 135.0 nm/min." | {
"record_id": "SYN-00168",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 13,
"unit": "wt%"
}
},
{
... |
normalize | "imidazole ; \"molar\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00168"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 13.0wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00169: acetic acid 8.2%w/w, + imidazole 0.48%, 40C/30s. etch 94.0 nm/min." | {
"record_id": "SYN-00169",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 8.2,
"unit": "wt%"
}
},
{
... |
normalize | "imidazole ; \"mol/L\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00169"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 8.2wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00170: acetic acid 23.0%w/w, + 5-methylbenzotriazole 0.3%, 30C/120s. etch 124.7 nm/min." | {
"record_id": "SYN-00170",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 23,
"unit": "wt%"
}
},
{
... |
normalize | "5-methylbenzotriazole ; \"molar\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00170"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 23.0wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00171: hydrogen peroxide 2.8%w/w, + tetrazole 0.38%, 50C/30s. etch 193.0 nm/min." | {
"record_id": "SYN-00171",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 2.8,
"unit": "wt%"
}
},
... |
normalize | "tetrazole ; \"M\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00171"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 2.8wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00172: hydrogen peroxide 29.5%w/w, + benzotriazole 1.5%, 50C/120s. etch 138.6 nm/min." | {
"record_id": "SYN-00172",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 29.5,
"unit": "wt%"
}
},
{... |
normalize | "benzotriazole ; \"M\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00172"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 29.5wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00173: hydrogen peroxide 22.5%w/w, + EDTA 1.72%, 25C/120s. etch 404.7 nm/min." | {
"record_id": "SYN-00173",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 22.5,
"unit": "wt%"
}
},
... |
normalize | "EDTA ; \"M\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00173"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 22.5wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00174: acetic acid 1.4wt%, + EDTA 0.34%, 40C/60s. etch 415.0 nm/min." | {
"record_id": "SYN-00174",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 1.4,
"unit": "wt%"
}
},
{
... |
normalize | "EDTA ; \"mol/L\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00174"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 1.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00175: acetic acid 12.5weight percent, + 5-methylbenzotriazole 0.97%, 50C/30s. etch 238.2 nm/min." | {
"record_id": "SYN-00175",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 12.5,
"unit": "wt%"
}
},
{
... |
normalize | "5-methylbenzotriazole ; \"molar\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00175"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 12.5wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00176: acetic acid 17.8weight percent, + tetrazole 1.41%, 40C/120s. etch 407.6 nm/min." | {
"record_id": "SYN-00176",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 17.8,
"unit": "wt%"
}
},
{
... |
normalize | "tetrazole ; \"molar\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00176"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 17.8wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00177: hydrogen peroxide 24.4%w/w, + EDTA 1.06%, 50C/60s. etch 130.2 nm/min." | {
"record_id": "SYN-00177",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 24.4,
"unit": "wt%"
}
},
... |
normalize | "EDTA ; \"M\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00177"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 24.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00178: phosphoric acid 3.0wt%, + tetrazole 0.44%, 25C/60s. etch 489.5 nm/min." | {
"record_id": "SYN-00178",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 3,
"unit": "wt%"
}
},
... |
normalize | "tetrazole ; \"molar\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00178"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 3.0wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00179: hydrogen peroxide 24.5wt%, + imidazole 0.07%, 25C/30s. etch 304.2 nm/min." | {
"record_id": "SYN-00179",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 24.5,
"unit": "wt%"
}
},
{... |
normalize | "imidazole ; \"mol/L\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00179"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 24.5wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00180: phosphoric acid 3.5%w/w, + imidazole 0.89%, 25C/120s. etch 13.3 nm/min." | {
"record_id": "SYN-00180",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 3.5,
"unit": "wt%"
}
},
... |
normalize | "imidazole ; \"M\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00180"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 3.5wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00181: phosphoric acid 6.3wt%, + 5-methylbenzotriazole 0.4%, 30C/120s. etch 296.1 nm/min." | {
"record_id": "SYN-00181",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 6.3,
"unit": "wt%"
}
},
... |
normalize | "5-methylbenzotriazole ; \"M\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00181"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 6.3wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00182: hydrogen peroxide 1.9%w/w, + tetrazole 1.31%, 30C/120s. etch 43.5 nm/min." | {
"record_id": "SYN-00182",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 1.9,
"unit": "wt%"
}
},
{
... |
normalize | "tetrazole ; \"M\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00182"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 1.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00183: acetic acid 29.2wt%, + benzotriazole 0.67%, 40C/60s. etch 488.6 nm/min." | {
"record_id": "SYN-00183",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 29.2,
"unit": "wt%"
}
},
{
... |
normalize | "benzotriazole ; \"mol/L\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00183"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 29.2wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00184: hydrogen peroxide 8.5%w/w, + benzotriazole 1.44%, 50C/60s. etch 335.8 nm/min." | {
"record_id": "SYN-00184",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 8.5,
"unit": "wt%"
}
},
{
... |
normalize | "benzotriazole ; \"M\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00184"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 8.5wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00185: acetic acid 22.7%w/w, + benzotriazole 0.99%, 25C/120s. etch 382.4 nm/min." | {
"record_id": "SYN-00185",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 22.7,
"unit": "wt%"
}
},
{... |
normalize | "benzotriazole ; \"molar\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00185"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 22.7wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00186: hydrogen peroxide 18.6%w/w, + benzotriazole 1.95%, 30C/30s. etch 204.6 nm/min." | {
"record_id": "SYN-00186",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 18.6,
"unit": "wt%"
}
},
... |
normalize | "benzotriazole ; \"M\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00186"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 18.6wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00187: hydrogen peroxide 17.8weight percent, + tetrazole 1.97%, 25C/30s. etch 206.8 nm/min." | {
"record_id": "SYN-00187",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 17.8,
"unit": "wt%"
}
},
{... |
normalize | "tetrazole ; \"M\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00187"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 17.8wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00188: acetic acid 12.7wt%, + imidazole 1.96%, 25C/120s. etch 418.6 nm/min." | {
"record_id": "SYN-00188",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 12.7,
"unit": "wt%"
}
},
{
... |
normalize | "imidazole ; \"molar\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00188"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 12.7wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00189: hydrogen peroxide 25.1wt%, + EDTA 1.17%, 40C/60s. etch 127.1 nm/min." | {
"record_id": "SYN-00189",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 25.1,
"unit": "wt%"
}
},
... |
normalize | "EDTA ; \"molar\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00189"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 25.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00190: hydrogen peroxide 9.3weight percent, + benzotriazole 1.56%, 30C/30s. etch 476.7 nm/min." | {
"record_id": "SYN-00190",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 9.3,
"unit": "wt%"
}
},
{
... |
normalize | "benzotriazole ; \"molar\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00190"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 9.3wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00191: hydrogen peroxide 7.0weight percent, + benzotriazole 0.93%, 50C/60s. etch 268.3 nm/min." | {
"record_id": "SYN-00191",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 7,
"unit": "wt%"
}
},
{
... |
normalize | "benzotriazole ; \"molar\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00191"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 7.0wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00192: phosphoric acid 16.0wt%, + EDTA 1.82%, 30C/120s. etch 200.4 nm/min." | {
"record_id": "SYN-00192",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 16,
"unit": "wt%"
}
},
... |
normalize | "EDTA ; \"M\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00192"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 16.0wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00193: hydrogen peroxide 17.4%w/w, + tetrazole 1.35%, 40C/120s. etch 152.1 nm/min." | {
"record_id": "SYN-00193",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 17.4,
"unit": "wt%"
}
},
{... |
normalize | "tetrazole ; \"mol/L\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00193"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 17.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00194: acetic acid 15.9wt%, + EDTA 0.5%, 25C/120s. etch 192.6 nm/min." | {
"record_id": "SYN-00194",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 15.9,
"unit": "wt%"
}
},
{
... |
normalize | "EDTA ; \"molar\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00194"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 15.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00195: hydrogen peroxide 11.7wt%, + tetrazole 1.54%, 30C/120s. etch 13.1 nm/min." | {
"record_id": "SYN-00195",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 11.7,
"unit": "wt%"
}
},
... |
normalize | "tetrazole ; \"mol/L\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00195"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 11.7wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00196: hydrogen peroxide 15.1%w/w, + imidazole 1.52%, 50C/30s. etch 405.8 nm/min." | {
"record_id": "SYN-00196",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 15.1,
"unit": "wt%"
}
},
{
... |
normalize | "imidazole ; \"mol/L\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00196"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 15.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00197: acetic acid 23.1wt%, + 5-methylbenzotriazole 0.99%, 30C/60s. etch 348.0 nm/min." | {
"record_id": "SYN-00197",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 23.1,
"unit": "wt%"
}
},
{... |
normalize | "5-methylbenzotriazole ; \"molar\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00197"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 23.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00198: phosphoric acid 25.0%w/w, + EDTA 1.36%, 50C/60s. etch 289.6 nm/min." | {
"record_id": "SYN-00198",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 25,
"unit": "wt%"
}
},
... |
normalize | "EDTA ; \"M\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00198"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 25.0wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00199: acetic acid 7.9weight percent, + tetrazole 0.79%, 30C/30s. etch 128.2 nm/min." | {
"record_id": "SYN-00199",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 7.9,
"unit": "wt%"
}
},
{
... |
normalize | "tetrazole ; \"mol/L\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00199"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 7.9wt%, vary inhibitor +/-0.2wt%." |
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