id stringlengths 24 24 | title stringclasses 442
values | context stringlengths 151 3.71k | question stringlengths 12 270 | answers dict |
|---|---|---|---|---|
572edf1e03f9891900756aa1 | Transistor | In 1948, the point-contact transistor was independently invented by German physicists Herbert Mataré and Heinrich Welker while working at the Compagnie des Freins et Signaux, a Westinghouse subsidiary located in Paris. Mataré had previous experience in developing crystal rectifiers from silicon and germanium in the German radar effort during World War II. Using this knowledge, he began researching the phenomenon of "interference" in 1947. By June 1948, witnessing currents flowing through point-contacts, Mataré produced consistent results using samples of germanium produced by Welker, similar to what Bardeen and Brattain had accomplished earlier in December 1947. Realizing that Bell Labs' scientists had already invented the transistor before them, the company rushed to get its "transistron" into production for amplified use in France's telephone network. | Where were Matare and Welker working when inventing the point-contact transistor? | {
"answer_start": [
142
],
"text": [
"Compagnie des Freins et Signaux"
]
} |
572edf1e03f9891900756aa0 | Transistor | In 1948, the point-contact transistor was independently invented by German physicists Herbert Mataré and Heinrich Welker while working at the Compagnie des Freins et Signaux, a Westinghouse subsidiary located in Paris. Mataré had previous experience in developing crystal rectifiers from silicon and germanium in the German radar effort during World War II. Using this knowledge, he began researching the phenomenon of "interference" in 1947. By June 1948, witnessing currents flowing through point-contacts, Mataré produced consistent results using samples of germanium produced by Welker, similar to what Bardeen and Brattain had accomplished earlier in December 1947. Realizing that Bell Labs' scientists had already invented the transistor before them, the company rushed to get its "transistron" into production for amplified use in France's telephone network. | Who invented the point-contact transistor? | {
"answer_start": [
86
],
"text": [
"Herbert Mataré and Heinrich Welker"
]
} |
572edf1e03f9891900756aa2 | Transistor | In 1948, the point-contact transistor was independently invented by German physicists Herbert Mataré and Heinrich Welker while working at the Compagnie des Freins et Signaux, a Westinghouse subsidiary located in Paris. Mataré had previous experience in developing crystal rectifiers from silicon and germanium in the German radar effort during World War II. Using this knowledge, he began researching the phenomenon of "interference" in 1947. By June 1948, witnessing currents flowing through point-contacts, Mataré produced consistent results using samples of germanium produced by Welker, similar to what Bardeen and Brattain had accomplished earlier in December 1947. Realizing that Bell Labs' scientists had already invented the transistor before them, the company rushed to get its "transistron" into production for amplified use in France's telephone network. | What was the name of Matare and Welker's transistor? | {
"answer_start": [
788
],
"text": [
"transistron"
]
} |
572edf1e03f9891900756aa3 | Transistor | In 1948, the point-contact transistor was independently invented by German physicists Herbert Mataré and Heinrich Welker while working at the Compagnie des Freins et Signaux, a Westinghouse subsidiary located in Paris. Mataré had previous experience in developing crystal rectifiers from silicon and germanium in the German radar effort during World War II. Using this knowledge, he began researching the phenomenon of "interference" in 1947. By June 1948, witnessing currents flowing through point-contacts, Mataré produced consistent results using samples of germanium produced by Welker, similar to what Bardeen and Brattain had accomplished earlier in December 1947. Realizing that Bell Labs' scientists had already invented the transistor before them, the company rushed to get its "transistron" into production for amplified use in France's telephone network. | What was the transistron used for? | {
"answer_start": [
821
],
"text": [
"amplified use in France's telephone network"
]
} |
572ee0cc03f9891900756ab3 | Transistor | Although several companies each produce over a billion individually packaged (known as discrete) transistors every year, the vast majority of transistors are now produced in integrated circuits (often shortened to IC, microchips or simply chips), along with diodes, resistors, capacitors and other electronic components, to produce complete electronic circuits. A logic gate consists of up to about twenty transistors whereas an advanced microprocessor, as of 2009, can use as many as 3 billion transistors (MOSFETs). "About 60 million transistors were built in 2002… for [each] man, woman, and child on Earth." | How many transistors make up a logic gate? | {
"answer_start": [
387
],
"text": [
"up to about twenty transistors"
]
} |
572ee0cc03f9891900756ab4 | Transistor | Although several companies each produce over a billion individually packaged (known as discrete) transistors every year, the vast majority of transistors are now produced in integrated circuits (often shortened to IC, microchips or simply chips), along with diodes, resistors, capacitors and other electronic components, to produce complete electronic circuits. A logic gate consists of up to about twenty transistors whereas an advanced microprocessor, as of 2009, can use as many as 3 billion transistors (MOSFETs). "About 60 million transistors were built in 2002… for [each] man, woman, and child on Earth." | How many transistors make up a microprocessor? | {
"answer_start": [
474
],
"text": [
"as many as 3 billion transistors"
]
} |
572ee0cc03f9891900756ab5 | Transistor | Although several companies each produce over a billion individually packaged (known as discrete) transistors every year, the vast majority of transistors are now produced in integrated circuits (often shortened to IC, microchips or simply chips), along with diodes, resistors, capacitors and other electronic components, to produce complete electronic circuits. A logic gate consists of up to about twenty transistors whereas an advanced microprocessor, as of 2009, can use as many as 3 billion transistors (MOSFETs). "About 60 million transistors were built in 2002… for [each] man, woman, and child on Earth." | How many transistors were made in 2002? | {
"answer_start": [
525
],
"text": [
"60 million transistors were built in 2002… for [each] man, woman, and child"
]
} |
572ee0cc03f9891900756ab6 | Transistor | Although several companies each produce over a billion individually packaged (known as discrete) transistors every year, the vast majority of transistors are now produced in integrated circuits (often shortened to IC, microchips or simply chips), along with diodes, resistors, capacitors and other electronic components, to produce complete electronic circuits. A logic gate consists of up to about twenty transistors whereas an advanced microprocessor, as of 2009, can use as many as 3 billion transistors (MOSFETs). "About 60 million transistors were built in 2002… for [each] man, woman, and child on Earth." | How many individually packaged transistors are produced each year? | {
"answer_start": [
40
],
"text": [
"over a billion"
]
} |
572ee0cc03f9891900756ab7 | Transistor | Although several companies each produce over a billion individually packaged (known as discrete) transistors every year, the vast majority of transistors are now produced in integrated circuits (often shortened to IC, microchips or simply chips), along with diodes, resistors, capacitors and other electronic components, to produce complete electronic circuits. A logic gate consists of up to about twenty transistors whereas an advanced microprocessor, as of 2009, can use as many as 3 billion transistors (MOSFETs). "About 60 million transistors were built in 2002… for [each] man, woman, and child on Earth." | What are some abbreviations for integrated circuits? | {
"answer_start": [
214
],
"text": [
"IC, microchips or simply chips"
]
} |
572ee21dc246551400ce476c | Transistor | The essential usefulness of a transistor comes from its ability to use a small signal applied between one pair of its terminals to control a much larger signal at another pair of terminals. This property is called gain. It can produce a stronger output signal, a voltage or current, which is proportional to a weaker input signal; that is, it can act as an amplifier. Alternatively, the transistor can be used to turn current on or off in a circuit as an electrically controlled switch, where the amount of current is determined by other circuit elements. | Why is a transistor so useful? | {
"answer_start": [
214
],
"text": [
"gain"
]
} |
572ee21dc246551400ce476d | Transistor | The essential usefulness of a transistor comes from its ability to use a small signal applied between one pair of its terminals to control a much larger signal at another pair of terminals. This property is called gain. It can produce a stronger output signal, a voltage or current, which is proportional to a weaker input signal; that is, it can act as an amplifier. Alternatively, the transistor can be used to turn current on or off in a circuit as an electrically controlled switch, where the amount of current is determined by other circuit elements. | What is gain? | {
"answer_start": [
340
],
"text": [
"it can act as an amplifier"
]
} |
572ee21dc246551400ce476e | Transistor | The essential usefulness of a transistor comes from its ability to use a small signal applied between one pair of its terminals to control a much larger signal at another pair of terminals. This property is called gain. It can produce a stronger output signal, a voltage or current, which is proportional to a weaker input signal; that is, it can act as an amplifier. Alternatively, the transistor can be used to turn current on or off in a circuit as an electrically controlled switch, where the amount of current is determined by other circuit elements. | What is an additional use of the transistor? | {
"answer_start": [
413
],
"text": [
"turn current on or off in a circuit"
]
} |
572ee21dc246551400ce476f | Transistor | The essential usefulness of a transistor comes from its ability to use a small signal applied between one pair of its terminals to control a much larger signal at another pair of terminals. This property is called gain. It can produce a stronger output signal, a voltage or current, which is proportional to a weaker input signal; that is, it can act as an amplifier. Alternatively, the transistor can be used to turn current on or off in a circuit as an electrically controlled switch, where the amount of current is determined by other circuit elements. | What determines the amount of current in an electrically controlled switch? | {
"answer_start": [
532
],
"text": [
"other circuit elements"
]
} |
572ee3c7c246551400ce4788 | Transistor | There are two types of transistors, which have slight differences in how they are used in a circuit. A bipolar transistor has terminals labeled base, collector, and emitter. A small current at the base terminal (that is, flowing between the base and the emitter) can control or switch a much larger current between the collector and emitter terminals. For a field-effect transistor, the terminals are labeled gate, source, and drain, and a voltage at the gate can control a current between source and drain. | How many types of transistors are there? | {
"answer_start": [
10
],
"text": [
"two"
]
} |
572ee3c7c246551400ce478a | Transistor | There are two types of transistors, which have slight differences in how they are used in a circuit. A bipolar transistor has terminals labeled base, collector, and emitter. A small current at the base terminal (that is, flowing between the base and the emitter) can control or switch a much larger current between the collector and emitter terminals. For a field-effect transistor, the terminals are labeled gate, source, and drain, and a voltage at the gate can control a current between source and drain. | What controls the large current between the collector and emitter? | {
"answer_start": [
174
],
"text": [
"A small current at the base terminal"
]
} |
572ee3c7c246551400ce478b | Transistor | There are two types of transistors, which have slight differences in how they are used in a circuit. A bipolar transistor has terminals labeled base, collector, and emitter. A small current at the base terminal (that is, flowing between the base and the emitter) can control or switch a much larger current between the collector and emitter terminals. For a field-effect transistor, the terminals are labeled gate, source, and drain, and a voltage at the gate can control a current between source and drain. | What are the components of a field-effect transistor? | {
"answer_start": [
409
],
"text": [
"gate, source, and drain"
]
} |
572ee3c7c246551400ce478c | Transistor | There are two types of transistors, which have slight differences in how they are used in a circuit. A bipolar transistor has terminals labeled base, collector, and emitter. A small current at the base terminal (that is, flowing between the base and the emitter) can control or switch a much larger current between the collector and emitter terminals. For a field-effect transistor, the terminals are labeled gate, source, and drain, and a voltage at the gate can control a current between source and drain. | In a field-effect transistor, what controls the current between the source and drain? | {
"answer_start": [
438
],
"text": [
"a voltage at the gate"
]
} |
572ee3c7c246551400ce4789 | Transistor | There are two types of transistors, which have slight differences in how they are used in a circuit. A bipolar transistor has terminals labeled base, collector, and emitter. A small current at the base terminal (that is, flowing between the base and the emitter) can control or switch a much larger current between the collector and emitter terminals. For a field-effect transistor, the terminals are labeled gate, source, and drain, and a voltage at the gate can control a current between source and drain. | What are the components of a bipolar transistor? | {
"answer_start": [
144
],
"text": [
"base, collector, and emitter"
]
} |
572ee52903f9891900756ac7 | Transistor | In a grounded-emitter transistor circuit, such as the light-switch circuit shown, as the base voltage rises, the emitter and collector currents rise exponentially. The collector voltage drops because of reduced resistance from collector to emitter. If the voltage difference between the collector and emitter were zero (or near zero), the collector current would be limited only by the load resistance (light bulb) and the supply voltage. This is called saturation because current is flowing from collector to emitter freely. When saturated, the switch is said to be on. | Why does the collector voltage drop in grounded-emitter transistor circuits? | {
"answer_start": [
203
],
"text": [
"reduced resistance from collector to emitter"
]
} |
572ee52903f9891900756ac8 | Transistor | In a grounded-emitter transistor circuit, such as the light-switch circuit shown, as the base voltage rises, the emitter and collector currents rise exponentially. The collector voltage drops because of reduced resistance from collector to emitter. If the voltage difference between the collector and emitter were zero (or near zero), the collector current would be limited only by the load resistance (light bulb) and the supply voltage. This is called saturation because current is flowing from collector to emitter freely. When saturated, the switch is said to be on. | What would happen if the voltage difference from collector and emitter were zero? | {
"answer_start": [
335
],
"text": [
"the collector current would be limited only by the load resistance (light bulb) and the supply voltage"
]
} |
572ee52903f9891900756ac9 | Transistor | In a grounded-emitter transistor circuit, such as the light-switch circuit shown, as the base voltage rises, the emitter and collector currents rise exponentially. The collector voltage drops because of reduced resistance from collector to emitter. If the voltage difference between the collector and emitter were zero (or near zero), the collector current would be limited only by the load resistance (light bulb) and the supply voltage. This is called saturation because current is flowing from collector to emitter freely. When saturated, the switch is said to be on. | What is the term for a zero difference between collector and emitter? | {
"answer_start": [
454
],
"text": [
"saturation"
]
} |
572ee52903f9891900756aca | Transistor | In a grounded-emitter transistor circuit, such as the light-switch circuit shown, as the base voltage rises, the emitter and collector currents rise exponentially. The collector voltage drops because of reduced resistance from collector to emitter. If the voltage difference between the collector and emitter were zero (or near zero), the collector current would be limited only by the load resistance (light bulb) and the supply voltage. This is called saturation because current is flowing from collector to emitter freely. When saturated, the switch is said to be on. | Why is the term saturation named as such? | {
"answer_start": [
473
],
"text": [
"current is flowing from collector to emitter freely"
]
} |
572ee52903f9891900756acb | Transistor | In a grounded-emitter transistor circuit, such as the light-switch circuit shown, as the base voltage rises, the emitter and collector currents rise exponentially. The collector voltage drops because of reduced resistance from collector to emitter. If the voltage difference between the collector and emitter were zero (or near zero), the collector current would be limited only by the load resistance (light bulb) and the supply voltage. This is called saturation because current is flowing from collector to emitter freely. When saturated, the switch is said to be on. | What position is the switch in when saturated? | {
"answer_start": [
567
],
"text": [
"on"
]
} |
572ee71203f9891900756adb | Transistor | Providing sufficient base drive current is a key problem in the use of bipolar transistors as switches. The transistor provides current gain, allowing a relatively large current in the collector to be switched by a much smaller current into the base terminal. The ratio of these currents varies depending on the type of transistor, and even for a particular type, varies depending on the collector current. In the example light-switch circuit shown, the resistor is chosen to provide enough base current to ensure the transistor will be saturated. | What is a major problem with using bipolar transistors as switches? | {
"answer_start": [
0
],
"text": [
"Providing sufficient base drive current"
]
} |
572ee71203f9891900756adc | Transistor | Providing sufficient base drive current is a key problem in the use of bipolar transistors as switches. The transistor provides current gain, allowing a relatively large current in the collector to be switched by a much smaller current into the base terminal. The ratio of these currents varies depending on the type of transistor, and even for a particular type, varies depending on the collector current. In the example light-switch circuit shown, the resistor is chosen to provide enough base current to ensure the transistor will be saturated. | What does the transistor provide? | {
"answer_start": [
128
],
"text": [
"current gain"
]
} |
572ee71203f9891900756add | Transistor | Providing sufficient base drive current is a key problem in the use of bipolar transistors as switches. The transistor provides current gain, allowing a relatively large current in the collector to be switched by a much smaller current into the base terminal. The ratio of these currents varies depending on the type of transistor, and even for a particular type, varies depending on the collector current. In the example light-switch circuit shown, the resistor is chosen to provide enough base current to ensure the transistor will be saturated. | What determines the current ratio in transistors? | {
"answer_start": [
308
],
"text": [
"the type of transistor"
]
} |
572ee71203f9891900756ade | Transistor | Providing sufficient base drive current is a key problem in the use of bipolar transistors as switches. The transistor provides current gain, allowing a relatively large current in the collector to be switched by a much smaller current into the base terminal. The ratio of these currents varies depending on the type of transistor, and even for a particular type, varies depending on the collector current. In the example light-switch circuit shown, the resistor is chosen to provide enough base current to ensure the transistor will be saturated. | If the type of transistor is the same what determines the current ratio? | {
"answer_start": [
388
],
"text": [
"collector current"
]
} |
572f4fb704bcaa1900d76839 | Transistor | In a switching circuit, the idea is to simulate, as near as possible, the ideal switch having the properties of open circuit when off, short circuit when on, and an instantaneous transition between the two states. Parameters are chosen such that the "off" output is limited to leakage currents too small to affect connected circuitry; the resistance of the transistor in the "on" state is too small to affect circuitry; and the transition between the two states is fast enough not to have a detrimental effect. | How are parameters chosen in a switching circuit? | {
"answer_start": [
246
],
"text": [
"the \"off\" output is limited to leakage currents too small to affect connected circuitry"
]
} |
572f4fb704bcaa1900d7683a | Transistor | In a switching circuit, the idea is to simulate, as near as possible, the ideal switch having the properties of open circuit when off, short circuit when on, and an instantaneous transition between the two states. Parameters are chosen such that the "off" output is limited to leakage currents too small to affect connected circuitry; the resistance of the transistor in the "on" state is too small to affect circuitry; and the transition between the two states is fast enough not to have a detrimental effect. | What is a switching circuit trying to simulate when on? | {
"answer_start": [
135
],
"text": [
"short circuit"
]
} |
572f4fb704bcaa1900d7683b | Transistor | In a switching circuit, the idea is to simulate, as near as possible, the ideal switch having the properties of open circuit when off, short circuit when on, and an instantaneous transition between the two states. Parameters are chosen such that the "off" output is limited to leakage currents too small to affect connected circuitry; the resistance of the transistor in the "on" state is too small to affect circuitry; and the transition between the two states is fast enough not to have a detrimental effect. | What is a switching circuit trying to simulate when off? | {
"answer_start": [
112
],
"text": [
"open circuit"
]
} |
572f4fb704bcaa1900d7683c | Transistor | In a switching circuit, the idea is to simulate, as near as possible, the ideal switch having the properties of open circuit when off, short circuit when on, and an instantaneous transition between the two states. Parameters are chosen such that the "off" output is limited to leakage currents too small to affect connected circuitry; the resistance of the transistor in the "on" state is too small to affect circuitry; and the transition between the two states is fast enough not to have a detrimental effect. | How quickly does the change from open circuit to short circuit happen? | {
"answer_start": [
165
],
"text": [
"instantaneous"
]
} |
572f50cbb2c2fd1400568001 | Transistor | Bipolar transistors are so named because they conduct by using both majority and minority carriers. The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes, and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p–n–p transistor). This construction produces two p–n junctions: a base–emitter junction and a base–collector junction, separated by a thin region of semiconductor known as the base region (two junction diodes wired together without sharing an intervening semiconducting region will not make a transistor). | What gives bipolar transistors their name? | {
"answer_start": [
41
],
"text": [
"they conduct by using both majority and minority carriers"
]
} |
572f50cbb2c2fd1400568002 | Transistor | Bipolar transistors are so named because they conduct by using both majority and minority carriers. The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes, and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p–n–p transistor). This construction produces two p–n junctions: a base–emitter junction and a base–collector junction, separated by a thin region of semiconductor known as the base region (two junction diodes wired together without sharing an intervening semiconducting region will not make a transistor). | What was the first mass-produced transistor? | {
"answer_start": [
104
],
"text": [
"bipolar junction transistor"
]
} |
572f50cbb2c2fd1400568003 | Transistor | Bipolar transistors are so named because they conduct by using both majority and minority carriers. The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes, and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p–n–p transistor). This construction produces two p–n junctions: a base–emitter junction and a base–collector junction, separated by a thin region of semiconductor known as the base region (two junction diodes wired together without sharing an intervening semiconducting region will not make a transistor). | What is the bipolar junction transistor a combination of? | {
"answer_start": [
203
],
"text": [
"two junction diodes"
]
} |
572f50cbb2c2fd1400568004 | Transistor | Bipolar transistors are so named because they conduct by using both majority and minority carriers. The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes, and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p–n–p transistor). This construction produces two p–n junctions: a base–emitter junction and a base–collector junction, separated by a thin region of semiconductor known as the base region (two junction diodes wired together without sharing an intervening semiconducting region will not make a transistor). | What is the name for a layer of p-type semiconductor set between two n-type semiconductors? | {
"answer_start": [
334
],
"text": [
"n–p–n transistor"
]
} |
572f50cbb2c2fd1400568005 | Transistor | Bipolar transistors are so named because they conduct by using both majority and minority carriers. The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes, and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p–n–p transistor). This construction produces two p–n junctions: a base–emitter junction and a base–collector junction, separated by a thin region of semiconductor known as the base region (two junction diodes wired together without sharing an intervening semiconducting region will not make a transistor). | What is the name for a layer of n-type semiconductor set between two p-type semiconductors? | {
"answer_start": [
441
],
"text": [
"p–n–p transistor"
]
} |
572f53ca04bcaa1900d76853 | Transistor | BJTs have three terminals, corresponding to the three layers of semiconductor—an emitter, a base, and a collector. They are useful in amplifiers because the currents at the emitter and collector are controllable by a relatively small base current. In an n–p–n transistor operating in the active region, the emitter–base junction is forward biased (electrons and holes recombine at the junction), and electrons are injected into the base region. Because the base is narrow, most of these electrons will diffuse into the reverse-biased (electrons and holes are formed at, and move away from the junction) base–collector junction and be swept into the collector; perhaps one-hundredth of the electrons will recombine in the base, which is the dominant mechanism in the base current. By controlling the number of electrons that can leave the base, the number of electrons entering the collector can be controlled. Collector current is approximately β (common-emitter current gain) times the base current. It is typically greater than 100 for small-signal transistors but can be smaller in transistors designed for high-power applications. | How many terminals do BJTs have? | {
"answer_start": [
10
],
"text": [
"three"
]
} |
572f53ca04bcaa1900d76854 | Transistor | BJTs have three terminals, corresponding to the three layers of semiconductor—an emitter, a base, and a collector. They are useful in amplifiers because the currents at the emitter and collector are controllable by a relatively small base current. In an n–p–n transistor operating in the active region, the emitter–base junction is forward biased (electrons and holes recombine at the junction), and electrons are injected into the base region. Because the base is narrow, most of these electrons will diffuse into the reverse-biased (electrons and holes are formed at, and move away from the junction) base–collector junction and be swept into the collector; perhaps one-hundredth of the electrons will recombine in the base, which is the dominant mechanism in the base current. By controlling the number of electrons that can leave the base, the number of electrons entering the collector can be controlled. Collector current is approximately β (common-emitter current gain) times the base current. It is typically greater than 100 for small-signal transistors but can be smaller in transistors designed for high-power applications. | How many layers of semiconductor do BJTs have? | {
"answer_start": [
48
],
"text": [
"three"
]
} |
572f53ca04bcaa1900d76855 | Transistor | BJTs have three terminals, corresponding to the three layers of semiconductor—an emitter, a base, and a collector. They are useful in amplifiers because the currents at the emitter and collector are controllable by a relatively small base current. In an n–p–n transistor operating in the active region, the emitter–base junction is forward biased (electrons and holes recombine at the junction), and electrons are injected into the base region. Because the base is narrow, most of these electrons will diffuse into the reverse-biased (electrons and holes are formed at, and move away from the junction) base–collector junction and be swept into the collector; perhaps one-hundredth of the electrons will recombine in the base, which is the dominant mechanism in the base current. By controlling the number of electrons that can leave the base, the number of electrons entering the collector can be controlled. Collector current is approximately β (common-emitter current gain) times the base current. It is typically greater than 100 for small-signal transistors but can be smaller in transistors designed for high-power applications. | What are the layers of semiconductor in a BJT? | {
"answer_start": [
78
],
"text": [
"an emitter, a base, and a collector"
]
} |
572f53ca04bcaa1900d76856 | Transistor | BJTs have three terminals, corresponding to the three layers of semiconductor—an emitter, a base, and a collector. They are useful in amplifiers because the currents at the emitter and collector are controllable by a relatively small base current. In an n–p–n transistor operating in the active region, the emitter–base junction is forward biased (electrons and holes recombine at the junction), and electrons are injected into the base region. Because the base is narrow, most of these electrons will diffuse into the reverse-biased (electrons and holes are formed at, and move away from the junction) base–collector junction and be swept into the collector; perhaps one-hundredth of the electrons will recombine in the base, which is the dominant mechanism in the base current. By controlling the number of electrons that can leave the base, the number of electrons entering the collector can be controlled. Collector current is approximately β (common-emitter current gain) times the base current. It is typically greater than 100 for small-signal transistors but can be smaller in transistors designed for high-power applications. | How can one find the amount of collector current? | {
"answer_start": [
945
],
"text": [
"β (common-emitter current gain) times the base current"
]
} |
572f53ca04bcaa1900d76857 | Transistor | BJTs have three terminals, corresponding to the three layers of semiconductor—an emitter, a base, and a collector. They are useful in amplifiers because the currents at the emitter and collector are controllable by a relatively small base current. In an n–p–n transistor operating in the active region, the emitter–base junction is forward biased (electrons and holes recombine at the junction), and electrons are injected into the base region. Because the base is narrow, most of these electrons will diffuse into the reverse-biased (electrons and holes are formed at, and move away from the junction) base–collector junction and be swept into the collector; perhaps one-hundredth of the electrons will recombine in the base, which is the dominant mechanism in the base current. By controlling the number of electrons that can leave the base, the number of electrons entering the collector can be controlled. Collector current is approximately β (common-emitter current gain) times the base current. It is typically greater than 100 for small-signal transistors but can be smaller in transistors designed for high-power applications. | What is the usual collector current for small-signal transistors? | {
"answer_start": [
1017
],
"text": [
"greater than 100"
]
} |
572f5b1004bcaa1900d7689b | Transistor | In a FET, the drain-to-source current flows via a conducting channel that connects the source region to the drain region. The conductivity is varied by the electric field that is produced when a voltage is applied between the gate and source terminals; hence the current flowing between the drain and source is controlled by the voltage applied between the gate and source. As the gate–source voltage (VGS) is increased, the drain–source current (IDS) increases exponentially for VGS below threshold, and then at a roughly quadratic rate (IGS ∝ (VGS − VT)2) (where VT is the threshold voltage at which drain current begins) in the "space-charge-limited" region above threshold. A quadratic behavior is not observed in modern devices, for example, at the 65 nm technology node. | What determines the conductivity in a FET? | {
"answer_start": [
156
],
"text": [
"electric field that is produced when a voltage is applied between the gate and source terminals"
]
} |
572f5b1004bcaa1900d7689c | Transistor | In a FET, the drain-to-source current flows via a conducting channel that connects the source region to the drain region. The conductivity is varied by the electric field that is produced when a voltage is applied between the gate and source terminals; hence the current flowing between the drain and source is controlled by the voltage applied between the gate and source. As the gate–source voltage (VGS) is increased, the drain–source current (IDS) increases exponentially for VGS below threshold, and then at a roughly quadratic rate (IGS ∝ (VGS − VT)2) (where VT is the threshold voltage at which drain current begins) in the "space-charge-limited" region above threshold. A quadratic behavior is not observed in modern devices, for example, at the 65 nm technology node. | What controls the current between the drain and source? | {
"answer_start": [
325
],
"text": [
"the voltage applied between the gate and source"
]
} |
572f5b1004bcaa1900d7689d | Transistor | In a FET, the drain-to-source current flows via a conducting channel that connects the source region to the drain region. The conductivity is varied by the electric field that is produced when a voltage is applied between the gate and source terminals; hence the current flowing between the drain and source is controlled by the voltage applied between the gate and source. As the gate–source voltage (VGS) is increased, the drain–source current (IDS) increases exponentially for VGS below threshold, and then at a roughly quadratic rate (IGS ∝ (VGS − VT)2) (where VT is the threshold voltage at which drain current begins) in the "space-charge-limited" region above threshold. A quadratic behavior is not observed in modern devices, for example, at the 65 nm technology node. | At what rate is the drain-source current increased when the gate-source current is increased? | {
"answer_start": [
513
],
"text": [
"a roughly quadratic rate"
]
} |
572f5b1004bcaa1900d7689e | Transistor | In a FET, the drain-to-source current flows via a conducting channel that connects the source region to the drain region. The conductivity is varied by the electric field that is produced when a voltage is applied between the gate and source terminals; hence the current flowing between the drain and source is controlled by the voltage applied between the gate and source. As the gate–source voltage (VGS) is increased, the drain–source current (IDS) increases exponentially for VGS below threshold, and then at a roughly quadratic rate (IGS ∝ (VGS − VT)2) (where VT is the threshold voltage at which drain current begins) in the "space-charge-limited" region above threshold. A quadratic behavior is not observed in modern devices, for example, at the 65 nm technology node. | Where is a quadratic behavior not observed? | {
"answer_start": [
715
],
"text": [
"in modern devices"
]
} |
572f8c1fa23a5019007fc721 | Transistor | FETs are divided into two families: junction FET (JFET) and insulated gate FET (IGFET). The IGFET is more commonly known as a metal–oxide–semiconductor FET (MOSFET), reflecting its original construction from layers of metal (the gate), oxide (the insulation), and semiconductor. Unlike IGFETs, the JFET gate forms a p–n diode with the channel which lies between the source and drain. Functionally, this makes the n-channel JFET the solid-state equivalent of the vacuum tube triode which, similarly, forms a diode between its grid and cathode. Also, both devices operate in the depletion mode, they both have a high input impedance, and they both conduct current under the control of an input voltage. | How many groups are FETs split into? | {
"answer_start": [
22
],
"text": [
"two"
]
} |
572f8c1fa23a5019007fc724 | Transistor | FETs are divided into two families: junction FET (JFET) and insulated gate FET (IGFET). The IGFET is more commonly known as a metal–oxide–semiconductor FET (MOSFET), reflecting its original construction from layers of metal (the gate), oxide (the insulation), and semiconductor. Unlike IGFETs, the JFET gate forms a p–n diode with the channel which lies between the source and drain. Functionally, this makes the n-channel JFET the solid-state equivalent of the vacuum tube triode which, similarly, forms a diode between its grid and cathode. Also, both devices operate in the depletion mode, they both have a high input impedance, and they both conduct current under the control of an input voltage. | How is a JFET different from an IGFET? | {
"answer_start": [
294
],
"text": [
"the JFET gate forms a p–n diode with the channel"
]
} |
572f8c1fa23a5019007fc722 | Transistor | FETs are divided into two families: junction FET (JFET) and insulated gate FET (IGFET). The IGFET is more commonly known as a metal–oxide–semiconductor FET (MOSFET), reflecting its original construction from layers of metal (the gate), oxide (the insulation), and semiconductor. Unlike IGFETs, the JFET gate forms a p–n diode with the channel which lies between the source and drain. Functionally, this makes the n-channel JFET the solid-state equivalent of the vacuum tube triode which, similarly, forms a diode between its grid and cathode. Also, both devices operate in the depletion mode, they both have a high input impedance, and they both conduct current under the control of an input voltage. | What are the names of the groups of FETs | {
"answer_start": [
36
],
"text": [
"junction FET (JFET) and insulated gate FET (IGFET)"
]
} |
572f8c1fa23a5019007fc725 | Transistor | FETs are divided into two families: junction FET (JFET) and insulated gate FET (IGFET). The IGFET is more commonly known as a metal–oxide–semiconductor FET (MOSFET), reflecting its original construction from layers of metal (the gate), oxide (the insulation), and semiconductor. Unlike IGFETs, the JFET gate forms a p–n diode with the channel which lies between the source and drain. Functionally, this makes the n-channel JFET the solid-state equivalent of the vacuum tube triode which, similarly, forms a diode between its grid and cathode. Also, both devices operate in the depletion mode, they both have a high input impedance, and they both conduct current under the control of an input voltage. | What mode do both JFET and IGFET operate in? | {
"answer_start": [
577
],
"text": [
"depletion mode"
]
} |
572f8c1fa23a5019007fc723 | Transistor | FETs are divided into two families: junction FET (JFET) and insulated gate FET (IGFET). The IGFET is more commonly known as a metal–oxide–semiconductor FET (MOSFET), reflecting its original construction from layers of metal (the gate), oxide (the insulation), and semiconductor. Unlike IGFETs, the JFET gate forms a p–n diode with the channel which lies between the source and drain. Functionally, this makes the n-channel JFET the solid-state equivalent of the vacuum tube triode which, similarly, forms a diode between its grid and cathode. Also, both devices operate in the depletion mode, they both have a high input impedance, and they both conduct current under the control of an input voltage. | What is the common term for an IFGET? | {
"answer_start": [
124
],
"text": [
"a metal–oxide–semiconductor FET (MOSFET)"
]
} |
572f9165a23a5019007fc771 | Transistor | FETs are further divided into depletion-mode and enhancement-mode types, depending on whether the channel is turned on or off with zero gate-to-source voltage. For enhancement mode, the channel is off at zero bias, and a gate potential can "enhance" the conduction. For the depletion mode, the channel is on at zero bias, and a gate potential (of the opposite polarity) can "deplete" the channel, reducing conduction. For either mode, a more positive gate voltage corresponds to a higher current for n-channel devices and a lower current for p-channel devices. Nearly all JFETs are depletion-mode because the diode junctions would forward bias and conduct if they were enhancement-mode devices; most IGFETs are enhancement-mode types. | How are FET's separated? | {
"answer_start": [
30
],
"text": [
"depletion-mode and enhancement-mode types"
]
} |
572f9165a23a5019007fc772 | Transistor | FETs are further divided into depletion-mode and enhancement-mode types, depending on whether the channel is turned on or off with zero gate-to-source voltage. For enhancement mode, the channel is off at zero bias, and a gate potential can "enhance" the conduction. For the depletion mode, the channel is on at zero bias, and a gate potential (of the opposite polarity) can "deplete" the channel, reducing conduction. For either mode, a more positive gate voltage corresponds to a higher current for n-channel devices and a lower current for p-channel devices. Nearly all JFETs are depletion-mode because the diode junctions would forward bias and conduct if they were enhancement-mode devices; most IGFETs are enhancement-mode types. | At what point is a channel off in enhancement-mode? | {
"answer_start": [
201
],
"text": [
"at zero bias"
]
} |
572f9165a23a5019007fc773 | Transistor | FETs are further divided into depletion-mode and enhancement-mode types, depending on whether the channel is turned on or off with zero gate-to-source voltage. For enhancement mode, the channel is off at zero bias, and a gate potential can "enhance" the conduction. For the depletion mode, the channel is on at zero bias, and a gate potential (of the opposite polarity) can "deplete" the channel, reducing conduction. For either mode, a more positive gate voltage corresponds to a higher current for n-channel devices and a lower current for p-channel devices. Nearly all JFETs are depletion-mode because the diode junctions would forward bias and conduct if they were enhancement-mode devices; most IGFETs are enhancement-mode types. | At what point is a channel on in depletion-mode? | {
"answer_start": [
308
],
"text": [
"at zero bias"
]
} |
572f9165a23a5019007fc774 | Transistor | FETs are further divided into depletion-mode and enhancement-mode types, depending on whether the channel is turned on or off with zero gate-to-source voltage. For enhancement mode, the channel is off at zero bias, and a gate potential can "enhance" the conduction. For the depletion mode, the channel is on at zero bias, and a gate potential (of the opposite polarity) can "deplete" the channel, reducing conduction. For either mode, a more positive gate voltage corresponds to a higher current for n-channel devices and a lower current for p-channel devices. Nearly all JFETs are depletion-mode because the diode junctions would forward bias and conduct if they were enhancement-mode devices; most IGFETs are enhancement-mode types. | What channel corresponds with high current? | {
"answer_start": [
500
],
"text": [
"n-channel devices"
]
} |
572f9165a23a5019007fc775 | Transistor | FETs are further divided into depletion-mode and enhancement-mode types, depending on whether the channel is turned on or off with zero gate-to-source voltage. For enhancement mode, the channel is off at zero bias, and a gate potential can "enhance" the conduction. For the depletion mode, the channel is on at zero bias, and a gate potential (of the opposite polarity) can "deplete" the channel, reducing conduction. For either mode, a more positive gate voltage corresponds to a higher current for n-channel devices and a lower current for p-channel devices. Nearly all JFETs are depletion-mode because the diode junctions would forward bias and conduct if they were enhancement-mode devices; most IGFETs are enhancement-mode types. | What channel corresponds with low current? | {
"answer_start": [
542
],
"text": [
"p-channel devices"
]
} |
572f958ca23a5019007fc7b7 | Transistor | The bipolar junction transistor (BJT) was the most commonly used transistor in the 1960s and 70s. Even after MOSFETs became widely available, the BJT remained the transistor of choice for many analog circuits such as amplifiers because of their greater linearity and ease of manufacture. In integrated circuits, the desirable properties of MOSFETs allowed them to capture nearly all market share for digital circuits. Discrete MOSFETs can be applied in transistor applications, including analog circuits, voltage regulators, amplifiers, power transmitters and motor drivers. | What was the most frequently used transistor in the 1960s and 70s? | {
"answer_start": [
4
],
"text": [
"bipolar junction transistor"
]
} |
572f958ca23a5019007fc7b8 | Transistor | The bipolar junction transistor (BJT) was the most commonly used transistor in the 1960s and 70s. Even after MOSFETs became widely available, the BJT remained the transistor of choice for many analog circuits such as amplifiers because of their greater linearity and ease of manufacture. In integrated circuits, the desirable properties of MOSFETs allowed them to capture nearly all market share for digital circuits. Discrete MOSFETs can be applied in transistor applications, including analog circuits, voltage regulators, amplifiers, power transmitters and motor drivers. | Why were BJTs so popular? | {
"answer_start": [
239
],
"text": [
"their greater linearity and ease of manufacture"
]
} |
572f958ca23a5019007fc7b9 | Transistor | The bipolar junction transistor (BJT) was the most commonly used transistor in the 1960s and 70s. Even after MOSFETs became widely available, the BJT remained the transistor of choice for many analog circuits such as amplifiers because of their greater linearity and ease of manufacture. In integrated circuits, the desirable properties of MOSFETs allowed them to capture nearly all market share for digital circuits. Discrete MOSFETs can be applied in transistor applications, including analog circuits, voltage regulators, amplifiers, power transmitters and motor drivers. | What are some applications of discrete MOSFETs? | {
"answer_start": [
453
],
"text": [
"transistor applications, including analog circuits, voltage regulators, amplifiers, power transmitters and motor drivers"
]
} |
572f958ca23a5019007fc7ba | Transistor | The bipolar junction transistor (BJT) was the most commonly used transistor in the 1960s and 70s. Even after MOSFETs became widely available, the BJT remained the transistor of choice for many analog circuits such as amplifiers because of their greater linearity and ease of manufacture. In integrated circuits, the desirable properties of MOSFETs allowed them to capture nearly all market share for digital circuits. Discrete MOSFETs can be applied in transistor applications, including analog circuits, voltage regulators, amplifiers, power transmitters and motor drivers. | What were the most popular digital circuits of the time? | {
"answer_start": [
340
],
"text": [
"MOSFETs"
]
} |
572f97a804bcaa1900d76abf | Transistor | The Pro Electron standard, the European Electronic Component Manufacturers Association part numbering scheme, begins with two letters: the first gives the semiconductor type (A for germanium, B for silicon, and C for materials like GaAs); the second letter denotes the intended use (A for diode, C for general-purpose transistor, etc.). A 3-digit sequence number (or one letter then 2 digits, for industrial types) follows. With early devices this indicated the case type. Suffixes may be used, with a letter (e.g. "C" often means high hFE, such as in: BC549C) or other codes may follow to show gain (e.g. BC327-25) or voltage rating (e.g. BUK854-800A). The more common prefixes are: | What is the Pro Electron standard? | {
"answer_start": [
31
],
"text": [
"European Electronic Component Manufacturers Association part numbering scheme"
]
} |
572f97a804bcaa1900d76ac0 | Transistor | The Pro Electron standard, the European Electronic Component Manufacturers Association part numbering scheme, begins with two letters: the first gives the semiconductor type (A for germanium, B for silicon, and C for materials like GaAs); the second letter denotes the intended use (A for diode, C for general-purpose transistor, etc.). A 3-digit sequence number (or one letter then 2 digits, for industrial types) follows. With early devices this indicated the case type. Suffixes may be used, with a letter (e.g. "C" often means high hFE, such as in: BC549C) or other codes may follow to show gain (e.g. BC327-25) or voltage rating (e.g. BUK854-800A). The more common prefixes are: | How many letters does the part numbering scheme begin with? | {
"answer_start": [
122
],
"text": [
"two letters"
]
} |
572f97a804bcaa1900d76ac1 | Transistor | The Pro Electron standard, the European Electronic Component Manufacturers Association part numbering scheme, begins with two letters: the first gives the semiconductor type (A for germanium, B for silicon, and C for materials like GaAs); the second letter denotes the intended use (A for diode, C for general-purpose transistor, etc.). A 3-digit sequence number (or one letter then 2 digits, for industrial types) follows. With early devices this indicated the case type. Suffixes may be used, with a letter (e.g. "C" often means high hFE, such as in: BC549C) or other codes may follow to show gain (e.g. BC327-25) or voltage rating (e.g. BUK854-800A). The more common prefixes are: | What is the first letter in the part numbering scheme? | {
"answer_start": [
151
],
"text": [
"the semiconductor type"
]
} |
572f97a804bcaa1900d76ac2 | Transistor | The Pro Electron standard, the European Electronic Component Manufacturers Association part numbering scheme, begins with two letters: the first gives the semiconductor type (A for germanium, B for silicon, and C for materials like GaAs); the second letter denotes the intended use (A for diode, C for general-purpose transistor, etc.). A 3-digit sequence number (or one letter then 2 digits, for industrial types) follows. With early devices this indicated the case type. Suffixes may be used, with a letter (e.g. "C" often means high hFE, such as in: BC549C) or other codes may follow to show gain (e.g. BC327-25) or voltage rating (e.g. BUK854-800A). The more common prefixes are: | What is the second letter in the part numbering scheme? | {
"answer_start": [
265
],
"text": [
"the intended use"
]
} |
572f97a804bcaa1900d76ac3 | Transistor | The Pro Electron standard, the European Electronic Component Manufacturers Association part numbering scheme, begins with two letters: the first gives the semiconductor type (A for germanium, B for silicon, and C for materials like GaAs); the second letter denotes the intended use (A for diode, C for general-purpose transistor, etc.). A 3-digit sequence number (or one letter then 2 digits, for industrial types) follows. With early devices this indicated the case type. Suffixes may be used, with a letter (e.g. "C" often means high hFE, such as in: BC549C) or other codes may follow to show gain (e.g. BC327-25) or voltage rating (e.g. BUK854-800A). The more common prefixes are: | What follows the 2 letters in the part numbering scheme? | {
"answer_start": [
337
],
"text": [
"A 3-digit sequence number"
]
} |
572f9c99a23a5019007fc7d3 | Transistor | The JEDEC EIA370 transistor device numbers usually start with "2N", indicating a three-terminal device (dual-gate field-effect transistors are four-terminal devices, so begin with 3N), then a 2, 3 or 4-digit sequential number with no significance as to device properties (although early devices with low numbers tend to be germanium). For example, 2N3055 is a silicon n–p–n power transistor, 2N1301 is a p–n–p germanium switching transistor. A letter suffix (such as "A") is sometimes used to indicate a newer variant, but rarely gain groupings. | What does the JEDEC EIA370 transistor number start with? | {
"answer_start": [
63
],
"text": [
"2N"
]
} |
572f9c99a23a5019007fc7d4 | Transistor | The JEDEC EIA370 transistor device numbers usually start with "2N", indicating a three-terminal device (dual-gate field-effect transistors are four-terminal devices, so begin with 3N), then a 2, 3 or 4-digit sequential number with no significance as to device properties (although early devices with low numbers tend to be germanium). For example, 2N3055 is a silicon n–p–n power transistor, 2N1301 is a p–n–p germanium switching transistor. A letter suffix (such as "A") is sometimes used to indicate a newer variant, but rarely gain groupings. | what does the 2N is the JEDEC EIA370 mean? | {
"answer_start": [
79
],
"text": [
"a three-terminal device"
]
} |
572f9c99a23a5019007fc7d5 | Transistor | The JEDEC EIA370 transistor device numbers usually start with "2N", indicating a three-terminal device (dual-gate field-effect transistors are four-terminal devices, so begin with 3N), then a 2, 3 or 4-digit sequential number with no significance as to device properties (although early devices with low numbers tend to be germanium). For example, 2N3055 is a silicon n–p–n power transistor, 2N1301 is a p–n–p germanium switching transistor. A letter suffix (such as "A") is sometimes used to indicate a newer variant, but rarely gain groupings. | What follows the 2N in a JEDEC EIA370? | {
"answer_start": [
190
],
"text": [
"a 2, 3 or 4-digit sequential number with no significance as to device properties"
]
} |
572f9c99a23a5019007fc7d6 | Transistor | The JEDEC EIA370 transistor device numbers usually start with "2N", indicating a three-terminal device (dual-gate field-effect transistors are four-terminal devices, so begin with 3N), then a 2, 3 or 4-digit sequential number with no significance as to device properties (although early devices with low numbers tend to be germanium). For example, 2N3055 is a silicon n–p–n power transistor, 2N1301 is a p–n–p germanium switching transistor. A letter suffix (such as "A") is sometimes used to indicate a newer variant, but rarely gain groupings. | What does a letter at the end of a device number mean? | {
"answer_start": [
502
],
"text": [
"a newer variant"
]
} |
572f9c99a23a5019007fc7d7 | Transistor | The JEDEC EIA370 transistor device numbers usually start with "2N", indicating a three-terminal device (dual-gate field-effect transistors are four-terminal devices, so begin with 3N), then a 2, 3 or 4-digit sequential number with no significance as to device properties (although early devices with low numbers tend to be germanium). For example, 2N3055 is a silicon n–p–n power transistor, 2N1301 is a p–n–p germanium switching transistor. A letter suffix (such as "A") is sometimes used to indicate a newer variant, but rarely gain groupings. | What does the number 2N1301 indicate? | {
"answer_start": [
402
],
"text": [
"a p–n–p germanium switching transistor"
]
} |
572fab9fb2c2fd14005682fb | Transistor | Manufacturers of devices may have their own proprietary numbering system, for example CK722. Since devices are second-sourced, a manufacturer's prefix (like "MPF" in MPF102, which originally would denote a Motorola FET) now is an unreliable indicator of who made the device. Some proprietary naming schemes adopt parts of other naming schemes, for example a PN2222A is a (possibly Fairchild Semiconductor) 2N2222A in a plastic case (but a PN108 is a plastic version of a BC108, not a 2N108, while the PN100 is unrelated to other xx100 devices). | What was once an indicator of the devices creator? | {
"answer_start": [
127
],
"text": [
"a manufacturer's prefix"
]
} |
572fab9fb2c2fd14005682fc | Transistor | Manufacturers of devices may have their own proprietary numbering system, for example CK722. Since devices are second-sourced, a manufacturer's prefix (like "MPF" in MPF102, which originally would denote a Motorola FET) now is an unreliable indicator of who made the device. Some proprietary naming schemes adopt parts of other naming schemes, for example a PN2222A is a (possibly Fairchild Semiconductor) 2N2222A in a plastic case (but a PN108 is a plastic version of a BC108, not a 2N108, while the PN100 is unrelated to other xx100 devices). | What makes a manufacturer's prefix less reliable? | {
"answer_start": [
99
],
"text": [
"devices are second-sourced"
]
} |
572fab9fb2c2fd14005682fd | Transistor | Manufacturers of devices may have their own proprietary numbering system, for example CK722. Since devices are second-sourced, a manufacturer's prefix (like "MPF" in MPF102, which originally would denote a Motorola FET) now is an unreliable indicator of who made the device. Some proprietary naming schemes adopt parts of other naming schemes, for example a PN2222A is a (possibly Fairchild Semiconductor) 2N2222A in a plastic case (but a PN108 is a plastic version of a BC108, not a 2N108, while the PN100 is unrelated to other xx100 devices). | What is the marking for a 2N2222A in a plastic case? | {
"answer_start": [
358
],
"text": [
"PN2222A"
]
} |
572fab9fb2c2fd14005682fe | Transistor | Manufacturers of devices may have their own proprietary numbering system, for example CK722. Since devices are second-sourced, a manufacturer's prefix (like "MPF" in MPF102, which originally would denote a Motorola FET) now is an unreliable indicator of who made the device. Some proprietary naming schemes adopt parts of other naming schemes, for example a PN2222A is a (possibly Fairchild Semiconductor) 2N2222A in a plastic case (but a PN108 is a plastic version of a BC108, not a 2N108, while the PN100 is unrelated to other xx100 devices). | What is a plastic version of a BC108? | {
"answer_start": [
439
],
"text": [
"PN108"
]
} |
572faff7b2c2fd1400568351 | Transistor | The junction forward voltage is the voltage applied to the emitter–base junction of a BJT in order to make the base conduct a specified current. The current increases exponentially as the junction forward voltage is increased. The values given in the table are typical for a current of 1 mA (the same values apply to semiconductor diodes). The lower the junction forward voltage the better, as this means that less power is required to "drive" the transistor. The junction forward voltage for a given current decreases with increase in temperature. For a typical silicon junction the change is −2.1 mV/°C. In some circuits special compensating elements (sensistors) must be used to compensate for such changes. | What is the junction forward voltage? | {
"answer_start": [
32
],
"text": [
"the voltage applied to the emitter–base junction of a BJT"
]
} |
572faff7b2c2fd1400568352 | Transistor | The junction forward voltage is the voltage applied to the emitter–base junction of a BJT in order to make the base conduct a specified current. The current increases exponentially as the junction forward voltage is increased. The values given in the table are typical for a current of 1 mA (the same values apply to semiconductor diodes). The lower the junction forward voltage the better, as this means that less power is required to "drive" the transistor. The junction forward voltage for a given current decreases with increase in temperature. For a typical silicon junction the change is −2.1 mV/°C. In some circuits special compensating elements (sensistors) must be used to compensate for such changes. | What is the purpose of a junction forward voltage? | {
"answer_start": [
99
],
"text": [
"to make the base conduct a specified current"
]
} |
572faff7b2c2fd1400568353 | Transistor | The junction forward voltage is the voltage applied to the emitter–base junction of a BJT in order to make the base conduct a specified current. The current increases exponentially as the junction forward voltage is increased. The values given in the table are typical for a current of 1 mA (the same values apply to semiconductor diodes). The lower the junction forward voltage the better, as this means that less power is required to "drive" the transistor. The junction forward voltage for a given current decreases with increase in temperature. For a typical silicon junction the change is −2.1 mV/°C. In some circuits special compensating elements (sensistors) must be used to compensate for such changes. | What is the ideal junction forward voltage? | {
"answer_start": [
344
],
"text": [
"lower"
]
} |
572faff7b2c2fd1400568354 | Transistor | The junction forward voltage is the voltage applied to the emitter–base junction of a BJT in order to make the base conduct a specified current. The current increases exponentially as the junction forward voltage is increased. The values given in the table are typical for a current of 1 mA (the same values apply to semiconductor diodes). The lower the junction forward voltage the better, as this means that less power is required to "drive" the transistor. The junction forward voltage for a given current decreases with increase in temperature. For a typical silicon junction the change is −2.1 mV/°C. In some circuits special compensating elements (sensistors) must be used to compensate for such changes. | Why is the ideal junction forward voltage lower? | {
"answer_start": [
410
],
"text": [
"less power is required to \"drive\" the transistor"
]
} |
572faff7b2c2fd1400568355 | Transistor | The junction forward voltage is the voltage applied to the emitter–base junction of a BJT in order to make the base conduct a specified current. The current increases exponentially as the junction forward voltage is increased. The values given in the table are typical for a current of 1 mA (the same values apply to semiconductor diodes). The lower the junction forward voltage the better, as this means that less power is required to "drive" the transistor. The junction forward voltage for a given current decreases with increase in temperature. For a typical silicon junction the change is −2.1 mV/°C. In some circuits special compensating elements (sensistors) must be used to compensate for such changes. | When happens to the junction forward voltage when temperature is raised? | {
"answer_start": [
509
],
"text": [
"decreases"
]
} |
572fb38ea23a5019007fc8c8 | Transistor | Because the electron mobility is higher than the hole mobility for all semiconductor materials, a given bipolar n–p–n transistor tends to be swifter than an equivalent p–n–p transistor. GaAs has the highest electron mobility of the three semiconductors. It is for this reason that GaAs is used in high-frequency applications. A relatively recent FET development, the high-electron-mobility transistor (HEMT), has a heterostructure (junction between different semiconductor materials) of aluminium gallium arsenide (AlGaAs)-gallium arsenide (GaAs) which has twice the electron mobility of a GaAs-metal barrier junction. Because of their high speed and low noise, HEMTs are used in satellite receivers working at frequencies around 12 GHz. HEMTs based on gallium nitride and aluminium gallium nitride (AlGaN/GaN HEMTs) provide a still higher electron mobility and are being developed for various applications. | What semiconductor has the highest electron mobility? | {
"answer_start": [
186
],
"text": [
"GaAs"
]
} |
572fb38ea23a5019007fc8c7 | Transistor | Because the electron mobility is higher than the hole mobility for all semiconductor materials, a given bipolar n–p–n transistor tends to be swifter than an equivalent p–n–p transistor. GaAs has the highest electron mobility of the three semiconductors. It is for this reason that GaAs is used in high-frequency applications. A relatively recent FET development, the high-electron-mobility transistor (HEMT), has a heterostructure (junction between different semiconductor materials) of aluminium gallium arsenide (AlGaAs)-gallium arsenide (GaAs) which has twice the electron mobility of a GaAs-metal barrier junction. Because of their high speed and low noise, HEMTs are used in satellite receivers working at frequencies around 12 GHz. HEMTs based on gallium nitride and aluminium gallium nitride (AlGaN/GaN HEMTs) provide a still higher electron mobility and are being developed for various applications. | What is quicker, a bipolar n-p-n transistor or a p-n-p transistor? | {
"answer_start": [
96
],
"text": [
"a given bipolar n–p–n transistor"
]
} |
572fb38ea23a5019007fc8c9 | Transistor | Because the electron mobility is higher than the hole mobility for all semiconductor materials, a given bipolar n–p–n transistor tends to be swifter than an equivalent p–n–p transistor. GaAs has the highest electron mobility of the three semiconductors. It is for this reason that GaAs is used in high-frequency applications. A relatively recent FET development, the high-electron-mobility transistor (HEMT), has a heterostructure (junction between different semiconductor materials) of aluminium gallium arsenide (AlGaAs)-gallium arsenide (GaAs) which has twice the electron mobility of a GaAs-metal barrier junction. Because of their high speed and low noise, HEMTs are used in satellite receivers working at frequencies around 12 GHz. HEMTs based on gallium nitride and aluminium gallium nitride (AlGaN/GaN HEMTs) provide a still higher electron mobility and are being developed for various applications. | What is the common application of GaAs? | {
"answer_start": [
297
],
"text": [
"high-frequency applications"
]
} |
572fb38ea23a5019007fc8ca | Transistor | Because the electron mobility is higher than the hole mobility for all semiconductor materials, a given bipolar n–p–n transistor tends to be swifter than an equivalent p–n–p transistor. GaAs has the highest electron mobility of the three semiconductors. It is for this reason that GaAs is used in high-frequency applications. A relatively recent FET development, the high-electron-mobility transistor (HEMT), has a heterostructure (junction between different semiconductor materials) of aluminium gallium arsenide (AlGaAs)-gallium arsenide (GaAs) which has twice the electron mobility of a GaAs-metal barrier junction. Because of their high speed and low noise, HEMTs are used in satellite receivers working at frequencies around 12 GHz. HEMTs based on gallium nitride and aluminium gallium nitride (AlGaN/GaN HEMTs) provide a still higher electron mobility and are being developed for various applications. | What does HEMT stand for? | {
"answer_start": [
367
],
"text": [
"high-electron-mobility transistor"
]
} |
572fb38ea23a5019007fc8cb | Transistor | Because the electron mobility is higher than the hole mobility for all semiconductor materials, a given bipolar n–p–n transistor tends to be swifter than an equivalent p–n–p transistor. GaAs has the highest electron mobility of the three semiconductors. It is for this reason that GaAs is used in high-frequency applications. A relatively recent FET development, the high-electron-mobility transistor (HEMT), has a heterostructure (junction between different semiconductor materials) of aluminium gallium arsenide (AlGaAs)-gallium arsenide (GaAs) which has twice the electron mobility of a GaAs-metal barrier junction. Because of their high speed and low noise, HEMTs are used in satellite receivers working at frequencies around 12 GHz. HEMTs based on gallium nitride and aluminium gallium nitride (AlGaN/GaN HEMTs) provide a still higher electron mobility and are being developed for various applications. | What are common applications of HEMT? | {
"answer_start": [
680
],
"text": [
"satellite receivers"
]
} |
572fb569947a6a140053cbca | Transistor | Discrete transistors are individually packaged transistors. Transistors come in many different semiconductor packages (see image). The two main categories are through-hole (or leaded), and surface-mount, also known as surface-mount device (SMD). The ball grid array (BGA) is the latest surface-mount package (currently only for large integrated circuits). It has solder "balls" on the underside in place of leads. Because they are smaller and have shorter interconnections, SMDs have better high-frequency characteristics but lower power rating. | What is a discrete transistor? | {
"answer_start": [
25
],
"text": [
"individually packaged transistors"
]
} |
572fb569947a6a140053cbcb | Transistor | Discrete transistors are individually packaged transistors. Transistors come in many different semiconductor packages (see image). The two main categories are through-hole (or leaded), and surface-mount, also known as surface-mount device (SMD). The ball grid array (BGA) is the latest surface-mount package (currently only for large integrated circuits). It has solder "balls" on the underside in place of leads. Because they are smaller and have shorter interconnections, SMDs have better high-frequency characteristics but lower power rating. | What are the two most common types of transistor? | {
"answer_start": [
159
],
"text": [
"through-hole (or leaded), and surface-mount"
]
} |
572fb569947a6a140053cbcd | Transistor | Discrete transistors are individually packaged transistors. Transistors come in many different semiconductor packages (see image). The two main categories are through-hole (or leaded), and surface-mount, also known as surface-mount device (SMD). The ball grid array (BGA) is the latest surface-mount package (currently only for large integrated circuits). It has solder "balls" on the underside in place of leads. Because they are smaller and have shorter interconnections, SMDs have better high-frequency characteristics but lower power rating. | What is the newest surface-mount transistor? | {
"answer_start": [
250
],
"text": [
"ball grid array (BGA)"
]
} |
572fb569947a6a140053cbcc | Transistor | Discrete transistors are individually packaged transistors. Transistors come in many different semiconductor packages (see image). The two main categories are through-hole (or leaded), and surface-mount, also known as surface-mount device (SMD). The ball grid array (BGA) is the latest surface-mount package (currently only for large integrated circuits). It has solder "balls" on the underside in place of leads. Because they are smaller and have shorter interconnections, SMDs have better high-frequency characteristics but lower power rating. | What is another name for the surface-mount transistor? | {
"answer_start": [
218
],
"text": [
"surface-mount device (SMD)"
]
} |
572fb569947a6a140053cbce | Transistor | Discrete transistors are individually packaged transistors. Transistors come in many different semiconductor packages (see image). The two main categories are through-hole (or leaded), and surface-mount, also known as surface-mount device (SMD). The ball grid array (BGA) is the latest surface-mount package (currently only for large integrated circuits). It has solder "balls" on the underside in place of leads. Because they are smaller and have shorter interconnections, SMDs have better high-frequency characteristics but lower power rating. | What is a ball grid array composed of? | {
"answer_start": [
363
],
"text": [
"solder \"balls\" on the underside in place of leads"
]
} |
572eda4a03f9891900756a79 | Modern_history | In the Pre-Modern era, many people's sense of self and purpose was often expressed via a faith in some form of deity, be that in a single God or in many gods. Pre-modern cultures have not been thought of creating a sense of distinct individuality, though. Religious officials, who often held positions of power, were the spiritual intermediaries to the common person. It was only through these intermediaries that the general masses had access to the divine. Tradition was sacred to ancient cultures and was unchanging and the social order of ceremony and morals in a culture could be strictly enforced. | What did many people in the Pre-Modern era express their faith through? | {
"answer_start": [
83
],
"text": [
"via a faith in some form of deity"
]
} |
572eda4a03f9891900756a7a | Modern_history | In the Pre-Modern era, many people's sense of self and purpose was often expressed via a faith in some form of deity, be that in a single God or in many gods. Pre-modern cultures have not been thought of creating a sense of distinct individuality, though. Religious officials, who often held positions of power, were the spiritual intermediaries to the common person. It was only through these intermediaries that the general masses had access to the divine. Tradition was sacred to ancient cultures and was unchanging and the social order of ceremony and morals in a culture could be strictly enforced. | What were Religious officials perceived as in the Pre-Modern era? | {
"answer_start": [
321
],
"text": [
"spiritual intermediaries"
]
} |
572eda4a03f9891900756a7b | Modern_history | In the Pre-Modern era, many people's sense of self and purpose was often expressed via a faith in some form of deity, be that in a single God or in many gods. Pre-modern cultures have not been thought of creating a sense of distinct individuality, though. Religious officials, who often held positions of power, were the spiritual intermediaries to the common person. It was only through these intermediaries that the general masses had access to the divine. Tradition was sacred to ancient cultures and was unchanging and the social order of ceremony and morals in a culture could be strictly enforced. | Through whom did the general masses have access to the divine? | {
"answer_start": [
256
],
"text": [
"Religious officials"
]
} |
572eda4a03f9891900756a7c | Modern_history | In the Pre-Modern era, many people's sense of self and purpose was often expressed via a faith in some form of deity, be that in a single God or in many gods. Pre-modern cultures have not been thought of creating a sense of distinct individuality, though. Religious officials, who often held positions of power, were the spiritual intermediaries to the common person. It was only through these intermediaries that the general masses had access to the divine. Tradition was sacred to ancient cultures and was unchanging and the social order of ceremony and morals in a culture could be strictly enforced. | What belief did ancient cultures consider sacred? | {
"answer_start": [
459
],
"text": [
"Tradition"
]
} |
572eda4a03f9891900756a7d | Modern_history | In the Pre-Modern era, many people's sense of self and purpose was often expressed via a faith in some form of deity, be that in a single God or in many gods. Pre-modern cultures have not been thought of creating a sense of distinct individuality, though. Religious officials, who often held positions of power, were the spiritual intermediaries to the common person. It was only through these intermediaries that the general masses had access to the divine. Tradition was sacred to ancient cultures and was unchanging and the social order of ceremony and morals in a culture could be strictly enforced. | How were the moral standards of ancient cultures enforced? | {
"answer_start": [
585
],
"text": [
"strictly"
]
} |
572ef2fcdfa6aa1500f8d4e8 | Modern_history | In the Pre-Modern era, many people's sense of self and purpose was often expressed via a faith in some form of deity, be that in a single God or in many gods. Pre-modern cultures have not been thought of creating a sense of distinct individuality, though. Religious officials, who often held positions of power, were the spiritual intermediaries to the common person. It was only through these intermediaries that the general masses had access to the divine. Tradition was sacred to ancient cultures and was unchanging and the social order of ceremony and morals in a culture could be strictly enforced. | Who were spiritual intermediates? | {
"answer_start": [
256
],
"text": [
"Religious officials"
]
} |
572ef2fcdfa6aa1500f8d4e7 | Modern_history | In the Pre-Modern era, many people's sense of self and purpose was often expressed via a faith in some form of deity, be that in a single God or in many gods. Pre-modern cultures have not been thought of creating a sense of distinct individuality, though. Religious officials, who often held positions of power, were the spiritual intermediaries to the common person. It was only through these intermediaries that the general masses had access to the divine. Tradition was sacred to ancient cultures and was unchanging and the social order of ceremony and morals in a culture could be strictly enforced. | Peoples sense of worth was expressed through what in the Pre-modern era? | {
"answer_start": [
83
],
"text": [
"via a faith in some form of deity"
]
} |
572ef2fcdfa6aa1500f8d4e9 | Modern_history | In the Pre-Modern era, many people's sense of self and purpose was often expressed via a faith in some form of deity, be that in a single God or in many gods. Pre-modern cultures have not been thought of creating a sense of distinct individuality, though. Religious officials, who often held positions of power, were the spiritual intermediaries to the common person. It was only through these intermediaries that the general masses had access to the divine. Tradition was sacred to ancient cultures and was unchanging and the social order of ceremony and morals in a culture could be strictly enforced. | Through who did the masses have access to the divine? | {
"answer_start": [
321
],
"text": [
"spiritual intermediaries"
]
} |
572ef2fcdfa6aa1500f8d4eb | Modern_history | In the Pre-Modern era, many people's sense of self and purpose was often expressed via a faith in some form of deity, be that in a single God or in many gods. Pre-modern cultures have not been thought of creating a sense of distinct individuality, though. Religious officials, who often held positions of power, were the spiritual intermediaries to the common person. It was only through these intermediaries that the general masses had access to the divine. Tradition was sacred to ancient cultures and was unchanging and the social order of ceremony and morals in a culture could be strictly enforced. | What did social order mandate be strictly enforced? | {
"answer_start": [
543
],
"text": [
"ceremony and morals"
]
} |
572ef2fcdfa6aa1500f8d4ea | Modern_history | In the Pre-Modern era, many people's sense of self and purpose was often expressed via a faith in some form of deity, be that in a single God or in many gods. Pre-modern cultures have not been thought of creating a sense of distinct individuality, though. Religious officials, who often held positions of power, were the spiritual intermediaries to the common person. It was only through these intermediaries that the general masses had access to the divine. Tradition was sacred to ancient cultures and was unchanging and the social order of ceremony and morals in a culture could be strictly enforced. | What belief was considered sacred by ancient civilizations? | {
"answer_start": [
459
],
"text": [
"Tradition"
]
} |
572edcc8cb0c0d14000f162c | Modern_history | The term "modern" was coined in the 16th century to indicate present or recent times (ultimately derived from the Latin adverb modo, meaning "just now). The European Renaissance (about 1420–1630), which marked the transition between the Late Middle Ages and Early Modern times, started in Italy and was spurred in part by the rediscovery of classical art and literature, as well as the new perspectives gained from the Age of Discovery and the invention of the telescope and microscope, expanding the borders of thought and knowledge. | What term was coined in the 16th century to indicate present time? | {
"answer_start": [
10
],
"text": [
"modern"
]
} |
572edcc8cb0c0d14000f162d | Modern_history | The term "modern" was coined in the 16th century to indicate present or recent times (ultimately derived from the Latin adverb modo, meaning "just now). The European Renaissance (about 1420–1630), which marked the transition between the Late Middle Ages and Early Modern times, started in Italy and was spurred in part by the rediscovery of classical art and literature, as well as the new perspectives gained from the Age of Discovery and the invention of the telescope and microscope, expanding the borders of thought and knowledge. | The term "modern" was derived from what Latin adverb? | {
"answer_start": [
127
],
"text": [
"modo"
]
} |
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