task stringclasses 3
values | input unknown | output unknown |
|---|---|---|
normalize | "EDTA ; \"M\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00133"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 26.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00134: phosphoric acid 27.9wt%, + imidazole 0.23%, 40C/120s. etch 211.7 nm/min." | {
"record_id": "SYN-00134",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 27.9,
"unit": "wt%"
}
},... |
normalize | "imidazole ; \"M\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00134"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 27.9wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00135: phosphoric acid 23.5%w/w, + 5-methylbenzotriazole 1.34%, 40C/60s. etch 192.8 nm/min." | {
"record_id": "SYN-00135",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 23.5,
"unit": "wt%"
}
},... |
normalize | "5-methylbenzotriazole ; \"mol/L\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00135"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 23.5wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00136: hydrogen peroxide 27.6weight percent, + imidazole 0.89%, 40C/60s. etch 383.9 nm/min." | {
"record_id": "SYN-00136",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 27.6,
"unit": "wt%"
}
},
{... |
normalize | "imidazole ; \"M\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00136"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 27.6wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00137: phosphoric acid 28.1weight percent, + 5-methylbenzotriazole 1.5%, 40C/60s. etch 115.1 nm/min." | {
"record_id": "SYN-00137",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 28.1,
"unit": "wt%"
}
},
... |
normalize | "5-methylbenzotriazole ; \"molar\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00137"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 28.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00138: acetic acid 12.6wt%, + 5-methylbenzotriazole 0.66%, 30C/60s. etch 259.4 nm/min." | {
"record_id": "SYN-00138",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 12.6,
"unit": "wt%"
}
},
{
... |
normalize | "5-methylbenzotriazole ; \"mol/L\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00138"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 12.6wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00139: hydrogen peroxide 12.8wt%, + EDTA 0.56%, 40C/30s. etch 57.4 nm/min." | {
"record_id": "SYN-00139",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 12.8,
"unit": "wt%"
}
},
... |
normalize | "EDTA ; \"M\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00139"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 12.8wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00140: phosphoric acid 4.8weight percent, + EDTA 1.65%, 30C/30s. etch 370.8 nm/min." | {
"record_id": "SYN-00140",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 4.8,
"unit": "wt%"
}
... |
normalize | "EDTA ; \"M\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00140"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 4.8wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00141: acetic acid 7.6weight percent, + 5-methylbenzotriazole 0.86%, 50C/30s. etch 218.5 nm/min." | {
"record_id": "SYN-00141",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 7.6,
"unit": "wt%"
}
},
{
... |
normalize | "5-methylbenzotriazole ; \"M\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00141"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 7.6wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00142: acetic acid 11.7wt%, + imidazole 0.71%, 50C/120s. etch 68.1 nm/min." | {
"record_id": "SYN-00142",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 11.7,
"unit": "wt%"
}
},
{
... |
normalize | "imidazole ; \"mol/L\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00142"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 11.7wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00143: hydrogen peroxide 23.4%w/w, + 5-methylbenzotriazole 0.32%, 30C/120s. etch 488.0 nm/min." | {
"record_id": "SYN-00143",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 23.4,
"unit": "wt%"
}
},
{... |
normalize | "5-methylbenzotriazole ; \"M\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00143"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 23.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00144: acetic acid 15.8%w/w, + tetrazole 0.92%, 30C/60s. etch 274.3 nm/min." | {
"record_id": "SYN-00144",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 15.8,
"unit": "wt%"
}
},
{... |
normalize | "tetrazole ; \"mol/L\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00144"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 15.8wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00145: hydrogen peroxide 11.2weight percent, + tetrazole 1.56%, 50C/30s. etch 224.1 nm/min." | {
"record_id": "SYN-00145",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 11.2,
"unit": "wt%"
}
},
... |
normalize | "tetrazole ; \"M\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00145"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 11.2wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00146: phosphoric acid 14.8%w/w, + 5-methylbenzotriazole 0.32%, 50C/60s. etch 180.6 nm/min." | {
"record_id": "SYN-00146",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 14.8,
"unit": "wt%"
}
},
... |
normalize | "5-methylbenzotriazole ; \"molar\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00146"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 14.8wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00147: hydrogen peroxide 28.1weight percent, + 5-methylbenzotriazole 1.28%, 25C/30s. etch 78.4 nm/min." | {
"record_id": "SYN-00147",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 28.1,
"unit": "wt%"
}
},
{
... |
normalize | "5-methylbenzotriazole ; \"mol/L\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00147"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 28.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00148: acetic acid 15.4wt%, + 5-methylbenzotriazole 0.38%, 25C/60s. etch 443.9 nm/min." | {
"record_id": "SYN-00148",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 15.4,
"unit": "wt%"
}
},
{
... |
normalize | "5-methylbenzotriazole ; \"molar\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00148"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 15.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00149: acetic acid 13.6%w/w, + EDTA 1.29%, 50C/120s. etch 285.8 nm/min." | {
"record_id": "SYN-00149",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 13.6,
"unit": "wt%"
}
},
{
... |
normalize | "EDTA ; \"mol/L\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00149"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 13.6wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00150: acetic acid 2.3%w/w, + 5-methylbenzotriazole 0.31%, 50C/120s. etch 305.4 nm/min." | {
"record_id": "SYN-00150",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 2.3,
"unit": "wt%"
}
},
{
... |
normalize | "5-methylbenzotriazole ; \"mol/L\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00150"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 2.3wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00151: acetic acid 10.8%w/w, + imidazole 1.39%, 30C/60s. etch 279.1 nm/min." | {
"record_id": "SYN-00151",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 10.8,
"unit": "wt%"
}
},
{
... |
normalize | "imidazole ; \"mol/L\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00151"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 10.8wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00152: phosphoric acid 7.4wt%, + benzotriazole 0.27%, 30C/60s. etch 475.4 nm/min." | {
"record_id": "SYN-00152",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 7.4,
"unit": "wt%"
}
... |
normalize | "benzotriazole ; \"M\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00152"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 7.4wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00153: phosphoric acid 25.8%w/w, + 5-methylbenzotriazole 1.19%, 50C/120s. etch 106.0 nm/min." | {
"record_id": "SYN-00153",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 25.8,
"unit": "wt%"
}
... |
normalize | "5-methylbenzotriazole ; \"mol/L\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00153"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 25.8wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00154: phosphoric acid 16.6wt%, + tetrazole 0.2%, 50C/30s. etch 102.8 nm/min." | {
"record_id": "SYN-00154",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 16.6,
"unit": "wt%"
}
},... |
normalize | "tetrazole ; \"M\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00154"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 16.6wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00155: acetic acid 26.0wt%, + benzotriazole 1.05%, 30C/60s. etch 129.9 nm/min." | {
"record_id": "SYN-00155",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 26,
"unit": "wt%"
}
},
{
... |
normalize | "benzotriazole ; \"mol/L\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00155"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 26.0wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00156: phosphoric acid 7.6%w/w, + EDTA 1.2%, 25C/30s. etch 78.2 nm/min." | {
"record_id": "SYN-00156",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 7.6,
"unit": "wt%"
}
},
... |
normalize | "EDTA ; \"mol/L\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00156"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 7.6wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00157: phosphoric acid 22.1wt%, + imidazole 0.1%, 50C/120s. etch 332.5 nm/min." | {
"record_id": "SYN-00157",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 22.1,
"unit": "wt%"
}
},
... |
normalize | "imidazole ; \"molar\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00157"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 22.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00158: phosphoric acid 19.3%w/w, + 5-methylbenzotriazole 0.57%, 25C/60s. etch 146.5 nm/min." | {
"record_id": "SYN-00158",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 19.3,
"unit": "wt%"
}
... |
normalize | "5-methylbenzotriazole ; \"molar\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00158"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 19.3wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00159: hydrogen peroxide 17.0wt%, + imidazole 0.36%, 50C/30s. etch 318.9 nm/min." | {
"record_id": "SYN-00159",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 17,
"unit": "wt%"
}
},
{
... |
normalize | "imidazole ; \"molar\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00159"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 17.0wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00160: acetic acid 8.3wt%, + tetrazole 0.25%, 25C/120s. etch 65.0 nm/min." | {
"record_id": "SYN-00160",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 8.3,
"unit": "wt%"
}
},
{
... |
normalize | "tetrazole ; \"molar\"" | {
"smiles": "c1nnn[nH]1",
"cas": "288-94-8",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00160"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 8.3wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00161: acetic acid 21.1weight percent, + 5-methylbenzotriazole 1.93%, 50C/30s. etch 304.8 nm/min." | {
"record_id": "SYN-00161",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "CC(=O)O",
"cas": "64-19-7",
"common_name": "acetic acid"
},
"concentration": {
"value": 21.1,
"unit": "wt%"
}
},
{... |
normalize | "5-methylbenzotriazole ; \"molar\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00161"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 21.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00162: hydrogen peroxide 25.0weight percent, + 5-methylbenzotriazole 1.97%, 40C/120s. etch 332.6 nm/min." | {
"record_id": "SYN-00162",
"project": "cmp_slurry",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 25,
"unit": "wt%"
}
},
{
... |
normalize | "5-methylbenzotriazole ; \"molar\"" | {
"smiles": "Cc1ccc2[nH]nnc2c1",
"cas": "136-85-6",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00162"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for cmp_slurry; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 25.0wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00163: phosphoric acid 18.7weight percent, + benzotriazole 0.62%, 25C/30s. etch 356.2 nm/min." | {
"record_id": "SYN-00163",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 18.7,
"unit": "wt%"
}
... |
normalize | "benzotriazole ; \"M\"" | {
"smiles": "c1ccc2[nH]nnc2c1",
"cas": "95-14-7",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00163"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 18.7wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00164: phosphoric acid 25.1wt%, + EDTA 0.29%, 50C/60s. etch 87.9 nm/min." | {
"record_id": "SYN-00164",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OP(=O)(O)O",
"cas": "7664-38-2",
"common_name": "phosphoric acid"
},
"concentration": {
"value": 25.1,
"unit": "wt%"
}
},... |
normalize | "EDTA ; \"M\"" | {
"smiles": "OC(=O)CN(CC(=O)O)CCN(CC(=O)O)CC(=O)O",
"cas": "60-00-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00164"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for photoresist; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 25.1wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00165: hydrogen peroxide 26.3%w/w, + imidazole 1.34%, 40C/120s. etch 327.1 nm/min." | {
"record_id": "SYN-00165",
"project": "copper_etchant",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 26.3,
"unit": "wt%"
}
},
... |
normalize | "imidazole ; \"molar\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
explain | {
"result": "BO recommendation",
"record": "SYN-00165"
} | "Recommended because the inhibitor concentration sits near the feasible boundary for copper_etchant; raising it further is predicted to trade etch rate for selectivity. Suggested next: hold main at 26.3wt%, vary inhibitor +/-0.2wt%." |
extract | "Exp SYN-00166: hydrogen peroxide 2.6weight percent, + imidazole 0.81%, 40C/120s. etch 113.5 nm/min." | {
"record_id": "SYN-00166",
"project": "photoresist",
"components": [
{
"role": "main",
"identifier": {
"smiles": "OO",
"cas": "7722-84-1",
"common_name": "hydrogen peroxide"
},
"concentration": {
"value": 2.6,
"unit": "wt%"
}
},
{
... |
normalize | "imidazole ; \"molar\"" | {
"smiles": "c1c[nH]cn1",
"cas": "288-32-4",
"unit": "mol/L"
} |
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