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of the facilities and workforce training programs
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- Work closely with faculty, students, and staff at partner universities to
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meet the needs and goals set by the VAST leadership team
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Potential candidates need to pay particular attention to the primary
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location of the opportunity when applying for this position.
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Primary Location:
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Virginia Tech Node in Blacksburg, VA (Job No: 526285)
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Virginia Commonwealth University in Richmond, VA (Job No: 562286)
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Norfolk State University Node in Norfolk, VA (Job No: 562287)
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University of Virginia Node in Charlottesville (Job No: 526288)
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Careers at Virginia Tech
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<https://careers.pageuppeople.com/968/cw/en-us/listing/>
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careers.pageuppeople.com ? 2 min read
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<https://careers.pageuppeople.com/968/cw/en-us/listing/>
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Masoud Agah
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Founding Director, Virginia Alliance for Semiconductor Technology (VAST)
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Virginia Microelectronics Consortium (VMEC) Professor of Engineering
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> The Bradley Dept. of Electrical and Computer Engineering
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> Mechanical Engineering Department (Affiliate)
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> Faculty Senate and University Council Member
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Virginia Tech
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Voice: (540) 231-2653
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VT MEMS Lab <http://www.agah-lab.org>
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From nzxie at uw.edu Fri Jul 14 19:08:20 2023
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From: nzxie at uw.edu (Ningzhi Xie)
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Date: Fri, 14 Jul 2023 16:08:20 -0700
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Subject: [labnetwork] Dicing sapphire wafer
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Message-ID: <CACHUCwJfbFp2ZJyZY8THMkeNuUff-FY-4fxgLNHzcYjm5S3+BQ@mail.gmail.com>
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Dear College,
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I am using the DISCO DAD 321 Wafer Dicing Saw and VT07 SD400 blade to dice
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a 460?m sapphire (Al2O3) wafer. It seems the wafer is too hard that I get
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into trouble of frequently breaking the dicing blade. I have tried lowing
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the spin speed to 12000rpm, the cutting speed to 1mm/s, and only cut into
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half of the wafer (230?m) but still got the blade broken. I am wondering if
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you have any good suggestions on sapphire wafer dicing.
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Thank you very much.
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Best regards,
|
Ningzhi Xie
|
Department of Electrical and Computer Engineering
|
University of Washington
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From jdeng at cns.fas.harvard.edu Fri Jul 14 21:05:58 2023
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From: jdeng at cns.fas.harvard.edu (Deng, Jiangdong)
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Date: Sat, 15 Jul 2023 01:05:58 +0000
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Subject: [labnetwork] Dicing sapphire wafer
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In-Reply-To: <CACHUCwJfbFp2ZJyZY8THMkeNuUff-FY-4fxgLNHzcYjm5S3+BQ@mail.gmail.com>
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References: <CACHUCwJfbFp2ZJyZY8THMkeNuUff-FY-4fxgLNHzcYjm5S3+BQ@mail.gmail.com>
|
Message-ID: <2EF2CE86-A2E7-4D73-9EFB-87B8B2DE66E2@cns.fas.harvard.edu>
|
1mm/s is too fast for sapphire. Typically we use 0.1 or 0.2 mm/s and 20k RPM. Blade thickness should be 0.3 mm ( no thinner than 0.2 mm). Please also check the disco service, and they usually will give you very good suggestions.
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-JD @ CNS of Harvard
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Sent from my iPhone
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> On Jul 14, 2023, at 7:55 PM, Ningzhi Xie <nzxie at uw.edu> wrote:
|
>
|
> ?
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> Dear College,
|
>
|
> I am using the DISCO DAD 321 Wafer Dicing Saw and VT07 SD400 blade to dice a 460?m sapphire (Al2O3) wafer. It seems the wafer is too hard that I get into trouble of frequently breaking the dicing blade. I have tried lowing the spin speed to 12000rpm, the cutting speed to 1mm/s, and only cut into half of the wafer (230?m) but still got the blade broken. I am wondering if you have any good suggestions on sapphire wafer dicing.
|
>
|
> Thank you very much.
|
>
|
> Best regards,
|
> Ningzhi Xie
|
> Department of Electrical and Computer Engineering
|
> University of Washington
|
> _______________________________________________
|
> labnetwork mailing list
|
> labnetwork at mtl.mit.edu
|
> https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork
|
From demis at ucsb.edu Fri Jul 14 21:50:45 2023
|
From: demis at ucsb.edu (Demis D. John)
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Date: Fri, 14 Jul 2023 18:50:45 -0700
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Subject: [labnetwork] Dicing sapphire wafer
|
In-Reply-To: <CACHUCwJfbFp2ZJyZY8THMkeNuUff-FY-4fxgLNHzcYjm5S3+BQ@mail.gmail.com>
|
References: <CACHUCwJfbFp2ZJyZY8THMkeNuUff-FY-4fxgLNHzcYjm5S3+BQ@mail.gmail.com>
|
Message-ID: <CAKrtPjoSPCGnJ+nb1x4sWWPHVTZ0X-csp1jgpp=mO-KqUO0MZQ@mail.gmail.com>
|
We commonly have that issue with thick (?400?m) sapphire.
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Even with good water jet cooling (critical to check that alignment), large
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grit blades (or the vitreous blades you're using), and slow cut speeds -
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the blades still break every ~8-15 cuts (we got this many cuts per blade
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with various experimentation).
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Disco did say those vitreous blades are supposed to last longer than
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resnoid, but we didn't have enough demo blades to really test it out
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efficiently, and didn't yet find parameters where they are outlasting our
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resnoid blades.
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A common solution include half-cutting the wafer (going only halfway into
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the wafer), then full-cutting the wafer on a separate pass. We still have
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to set the program to check the blade every 1-2 cuts, as it wears and
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breaks eventually, and it takes a *very* long time to complete the wafer in
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this way, so we just do full-cutting and change blades when it wears down
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too much (via automatic checking on our ADT) - it was actually faster this
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way for us, but I guess it potentially consumes the resnoid blades faster.
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-- Demis (contact info <https://wiki.nanotech.ucsb.edu/wiki/Demis_D._John>)
|
*Reminder*: The NanoFab has a publications policy
|
<https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab>
|
On Fri, Jul 14, 2023 at 4:57?PM Ningzhi Xie <nzxie at uw.edu> wrote:
|
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