Unnamed: 0 int64 0 350k | level_0 int64 0 351k | ApplicationNumber int64 9.75M 96.1M | ArtUnit int64 1.6k 3.99k | Abstract stringlengths 1 8.37k | Claims stringlengths 3 292k | abstract-claims stringlengths 68 293k | TechCenter int64 1.6k 3.9k |
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11,600 | 11,600 | 15,938,128 | 2,853 | In an example, a printer ink dryer unit comprises at least one ultraviolet light source to dry a printer ink layer by causing evaporation of a solvent fluid therefrom. | 1. A method comprising
irradiating a substrate bearing a solvent-based printing substance comprising a colorant with radiation to cause evaporation of solvent fluid therefrom, wherein a waveband of the radiation is such that heating of the solvent fluid is substantially due to heat transfer from the colorant. 2. A method according to claim 1, comprising irradiating the substrate with radiation having a radiation absorption efficiency of at least 70% for a colorant of the printing substance. 3. A method according to claim 1, comprising selecting or controlling the waveband or radiation according to the color of at least one colorant. 4. A method according to claim 1, comprising irradiating the printing substance with a waveband of radiation which is between 200 nm and 410 nm. 5. A method according to claim 1, comprising:
irradiating the printing substance with a non-laser Light Emitting Diode (LED); and absorbing ultraviolet light from the LED with Cyan, Yellow, Magenta and Black pigments in a solvent fluid of the printing substance with a difference in absorption efficiency of less than 30%. 6. A method according to claim 5, wherein the LED has a peak wavelength of 295-405 nm. 7. A method according to claim 6, wherein the LED has a peak wavelength of 395 nm. 8. A method according to claim 5, wherein the LED has a bandwidth of 30 nm or less. 9. A method according to claim 5, wherein the LED comprises an array of non-laser, ultraviolet light emitting diodes, the array comprising ultraviolet LEDs that emit different wavebands,
the method further comprising controlling selected LEDs in the array based on a waveband that is optimal for drying of a particular printing being printed. 10. A method of claim 9, further comprising selectively operating LEDs in the array that provide at least a minimum absorption efficiency for all pigments in the printing being printed. 11. A method comprising:
irradiating a printed substrate comprising undried inks of different colors, the undried inks comprising Cyan, Yellow, Magenta and Black pigments in solvents that are subject to evaporation, the irradiating performed with at least one non-laser, ultraviolet light emitting diode (LED) as a light source to dry the inks; wherein the inks with Cyan, Yellow, Magenta and Black pigments are all dried simultaneously by the irradiation. 12. The method of claim 11, further comprising absorbing ultraviolet light from the LED with Cyan, Yellow, Magenta and Black pigments in a solvent fluid of the printing substance with a difference in absorption efficiency of less than 30%. 13. The method of claim 12, in which the light source has a peak wavelength of 295-405 nm and a bandwidth of 30 nm or less. 14. The method of claim 11, wherein an array of non-laser, ultraviolet light emitting diodes, the array comprising ultraviolet LEDs that emit different wavebands, is used,
the method further comprising controlling selected LEDs in the array based on a waveband that is optimal for drying of a particular printing being produced. 15. The method of claim 14, further comprising selectively operating LEDs in the array that provide at least a minimum absorption efficiency for all pigments in the printing. 16. A method comprising:
irradiating a printed substrate comprising undried inks of different colors, the undried inks comprising Cyan, Yellow, Magenta and Black pigments in solvents that are subject to evaporation, the irradiating performed with at least one non-laser, ultraviolet light emitting diode (LED) as a light source to dry the inks; and absorbing ultraviolet light from the LED with the Cyan, Yellow, Magenta and Black pigments with a difference in absorption efficiency of less than 30%. 17. The method of claim 16, further comprising drying the inks with Cyan, Yellow, Magenta and Black pigments together with a single irradiation. 18. The method of claim 16, in which the light source has a peak wavelength of 295-405 nm and a bandwidth of 30 nm or less. 19. The method of claim 16, wherein an array of non-laser, ultraviolet light emitting diodes, the array comprising ultraviolet LEDs that emit different wavebands, is used,
the method further comprising controlling selected LEDs in the array based on a waveband that is optimal for drying of a particular printing being produced. 20. The method of claim 19, further comprising selectively operating LEDs in the array that provide at least a minimum absorption efficiency for all pigments in the printing. | In an example, a printer ink dryer unit comprises at least one ultraviolet light source to dry a printer ink layer by causing evaporation of a solvent fluid therefrom.1. A method comprising
irradiating a substrate bearing a solvent-based printing substance comprising a colorant with radiation to cause evaporation of solvent fluid therefrom, wherein a waveband of the radiation is such that heating of the solvent fluid is substantially due to heat transfer from the colorant. 2. A method according to claim 1, comprising irradiating the substrate with radiation having a radiation absorption efficiency of at least 70% for a colorant of the printing substance. 3. A method according to claim 1, comprising selecting or controlling the waveband or radiation according to the color of at least one colorant. 4. A method according to claim 1, comprising irradiating the printing substance with a waveband of radiation which is between 200 nm and 410 nm. 5. A method according to claim 1, comprising:
irradiating the printing substance with a non-laser Light Emitting Diode (LED); and absorbing ultraviolet light from the LED with Cyan, Yellow, Magenta and Black pigments in a solvent fluid of the printing substance with a difference in absorption efficiency of less than 30%. 6. A method according to claim 5, wherein the LED has a peak wavelength of 295-405 nm. 7. A method according to claim 6, wherein the LED has a peak wavelength of 395 nm. 8. A method according to claim 5, wherein the LED has a bandwidth of 30 nm or less. 9. A method according to claim 5, wherein the LED comprises an array of non-laser, ultraviolet light emitting diodes, the array comprising ultraviolet LEDs that emit different wavebands,
the method further comprising controlling selected LEDs in the array based on a waveband that is optimal for drying of a particular printing being printed. 10. A method of claim 9, further comprising selectively operating LEDs in the array that provide at least a minimum absorption efficiency for all pigments in the printing being printed. 11. A method comprising:
irradiating a printed substrate comprising undried inks of different colors, the undried inks comprising Cyan, Yellow, Magenta and Black pigments in solvents that are subject to evaporation, the irradiating performed with at least one non-laser, ultraviolet light emitting diode (LED) as a light source to dry the inks; wherein the inks with Cyan, Yellow, Magenta and Black pigments are all dried simultaneously by the irradiation. 12. The method of claim 11, further comprising absorbing ultraviolet light from the LED with Cyan, Yellow, Magenta and Black pigments in a solvent fluid of the printing substance with a difference in absorption efficiency of less than 30%. 13. The method of claim 12, in which the light source has a peak wavelength of 295-405 nm and a bandwidth of 30 nm or less. 14. The method of claim 11, wherein an array of non-laser, ultraviolet light emitting diodes, the array comprising ultraviolet LEDs that emit different wavebands, is used,
the method further comprising controlling selected LEDs in the array based on a waveband that is optimal for drying of a particular printing being produced. 15. The method of claim 14, further comprising selectively operating LEDs in the array that provide at least a minimum absorption efficiency for all pigments in the printing. 16. A method comprising:
irradiating a printed substrate comprising undried inks of different colors, the undried inks comprising Cyan, Yellow, Magenta and Black pigments in solvents that are subject to evaporation, the irradiating performed with at least one non-laser, ultraviolet light emitting diode (LED) as a light source to dry the inks; and absorbing ultraviolet light from the LED with the Cyan, Yellow, Magenta and Black pigments with a difference in absorption efficiency of less than 30%. 17. The method of claim 16, further comprising drying the inks with Cyan, Yellow, Magenta and Black pigments together with a single irradiation. 18. The method of claim 16, in which the light source has a peak wavelength of 295-405 nm and a bandwidth of 30 nm or less. 19. The method of claim 16, wherein an array of non-laser, ultraviolet light emitting diodes, the array comprising ultraviolet LEDs that emit different wavebands, is used,
the method further comprising controlling selected LEDs in the array based on a waveband that is optimal for drying of a particular printing being produced. 20. The method of claim 19, further comprising selectively operating LEDs in the array that provide at least a minimum absorption efficiency for all pigments in the printing. | 2,800 |
11,601 | 11,601 | 14,434,735 | 2,891 | A method for improving precision of measurement of material composition of formations determined by gamma ray spectral an analysis includes determining an accurate value of an amount of a selected by analyzing a spectrum of gamma rays detected from the formations using a technique that directly relates the gamma ray spectrum to the amount of the material. A precise value of the amount of the material is determined by analyzing the spectrum of detected gamma rays that indirectly relates the gamma ray spectrum to the amount of the material. A function relating the accurate value to the precise value over a selected axial interval along the wellbore is determined. The function is applied to the accurate value at at least one selected axial position along the wellbore to determine an accurate and precise value of the amount of the material. | 1. A method for improving precision of an accurate measurement of material composition of formations determined by gamma ray spectral analysis, comprising:
in a computer, determining an accurate value of an amount of a selected material in the formations by analyzing a spectrum of gamma rays detected from the formations at a selected axial position along a wellbore using a technique that directly relates the gamma ray spectrum to the amount of the material; in the computer, determining a precise value of the amount of the selected material by analyzing the spectrum of detected gamma rays using a technique that indirectly relates the gamma ray spectrum to the amount of the material; in the computer, determining a function relating the accurate value to the precise value over a selected axial interval along the wellbore; and in the computer, applying the function to the precise value at at least one selected axial position along the wellbore to determine an accurate and precise value of the amount of the material. 2. The method of claim 1 wherein the detected gamma rays comprise at least one of naturally emitted gamma rays, neutron activation gamma rays, thermal neutron capture gamma rays and neutron inelastic collision gamma rays. 3. The method of claim 1 wherein the function comprises an average of a difference between the accurate value and each precise value over the selected axial interval. 4. The method of claim 3 wherein the difference is constant. 5. The method of claim 3 wherein the difference is a function of the accurate value and the precise values over the selected axial interval. 6. The method of claim 5 wherein the difference function is linear. 7. The method of claim 1 wherein the function comprises a polynomial expression relating the accurate value to the precise values over the selected axial interval. 8. The method of claim 1 wherein the material comprises aluminum. 9. The method of claim 8 wherein the indirectly related gamma rays comprise gamma rays emanating from calcium, silicon and iron. 10. The method of claim 1 wherein the at least one selected axial position is at a midpoint of the axial interval. 11. The method of claim 1 further comprising determining in the computer at least one formation characteristic from a value of the function. 12. The method of claim 1 further wherein the function relating the accurate and precise values depends on at least one other petrophysical measurement. 13. The method of claim 1 wherein the difference between the original accurate value and the value obtained through alpha processing is redistributed to obtain a more precise value for the other elements. 14. A method for well logging to determine material composition of formations, comprising:
moving a well logging instrument along an interior of a wellbore, the instrument including at least one gamma ray detector coupled to a spectral analyzer; in a computer, determining an accurate value of an amount of a selected material in the formations by analyzing the detected gamma ray spectrum at a selected axial position along a wellbore using a technique that directly relates the gamma ray spectrum to the amount of the material; in the computer determining a precise value of the amount of the selected material by analyzing the detected gamma ray spectrum using a technique that indirectly relates the gamma ray spectrum to the amount of the material; in the computer, determining a function relating the accurate value to the precise value over a selected axial interval along the wellbore; and in the computer, applying the function to the precise value at at least one selected axial position along the wellbore to determine an accurate and precise value of the amount of the material. 15. The method of claim 14 further comprising imparting at least one of gamma rays and neutrons to the formations, wherein the detected gamma rays result from interaction of the imparted gamma rays and/or neutrons with the formations. 16. The method of claim 14 wherein the detected gamma rays comprise at least one of naturally emitted gamma rays, neutron activation gamma rays, thermal neutron capture gamma rays and neutron inelastic collision gamma rays. 17. The method of claim 14 wherein the function comprises an average of a difference between the accurate value and each precise value over the selected axial interval. 18. (canceled) 19. The method of claim 17 wherein the difference is a function of the accurate value and the precise values over the selected axial interval. 20. (canceled) 21. The method of claim 14 wherein the function comprises a polynomial expression relating the accurate value to the precise values over the selected axial interval. 22. (canceled) 23. (canceled) 24. The method of claim 14 wherein the at least one selected axial position is at a midpoint of the axial interval. 25. (canceled) 26. (canceled) 27. (canceled) | A method for improving precision of measurement of material composition of formations determined by gamma ray spectral an analysis includes determining an accurate value of an amount of a selected by analyzing a spectrum of gamma rays detected from the formations using a technique that directly relates the gamma ray spectrum to the amount of the material. A precise value of the amount of the material is determined by analyzing the spectrum of detected gamma rays that indirectly relates the gamma ray spectrum to the amount of the material. A function relating the accurate value to the precise value over a selected axial interval along the wellbore is determined. The function is applied to the accurate value at at least one selected axial position along the wellbore to determine an accurate and precise value of the amount of the material.1. A method for improving precision of an accurate measurement of material composition of formations determined by gamma ray spectral analysis, comprising:
in a computer, determining an accurate value of an amount of a selected material in the formations by analyzing a spectrum of gamma rays detected from the formations at a selected axial position along a wellbore using a technique that directly relates the gamma ray spectrum to the amount of the material; in the computer, determining a precise value of the amount of the selected material by analyzing the spectrum of detected gamma rays using a technique that indirectly relates the gamma ray spectrum to the amount of the material; in the computer, determining a function relating the accurate value to the precise value over a selected axial interval along the wellbore; and in the computer, applying the function to the precise value at at least one selected axial position along the wellbore to determine an accurate and precise value of the amount of the material. 2. The method of claim 1 wherein the detected gamma rays comprise at least one of naturally emitted gamma rays, neutron activation gamma rays, thermal neutron capture gamma rays and neutron inelastic collision gamma rays. 3. The method of claim 1 wherein the function comprises an average of a difference between the accurate value and each precise value over the selected axial interval. 4. The method of claim 3 wherein the difference is constant. 5. The method of claim 3 wherein the difference is a function of the accurate value and the precise values over the selected axial interval. 6. The method of claim 5 wherein the difference function is linear. 7. The method of claim 1 wherein the function comprises a polynomial expression relating the accurate value to the precise values over the selected axial interval. 8. The method of claim 1 wherein the material comprises aluminum. 9. The method of claim 8 wherein the indirectly related gamma rays comprise gamma rays emanating from calcium, silicon and iron. 10. The method of claim 1 wherein the at least one selected axial position is at a midpoint of the axial interval. 11. The method of claim 1 further comprising determining in the computer at least one formation characteristic from a value of the function. 12. The method of claim 1 further wherein the function relating the accurate and precise values depends on at least one other petrophysical measurement. 13. The method of claim 1 wherein the difference between the original accurate value and the value obtained through alpha processing is redistributed to obtain a more precise value for the other elements. 14. A method for well logging to determine material composition of formations, comprising:
moving a well logging instrument along an interior of a wellbore, the instrument including at least one gamma ray detector coupled to a spectral analyzer; in a computer, determining an accurate value of an amount of a selected material in the formations by analyzing the detected gamma ray spectrum at a selected axial position along a wellbore using a technique that directly relates the gamma ray spectrum to the amount of the material; in the computer determining a precise value of the amount of the selected material by analyzing the detected gamma ray spectrum using a technique that indirectly relates the gamma ray spectrum to the amount of the material; in the computer, determining a function relating the accurate value to the precise value over a selected axial interval along the wellbore; and in the computer, applying the function to the precise value at at least one selected axial position along the wellbore to determine an accurate and precise value of the amount of the material. 15. The method of claim 14 further comprising imparting at least one of gamma rays and neutrons to the formations, wherein the detected gamma rays result from interaction of the imparted gamma rays and/or neutrons with the formations. 16. The method of claim 14 wherein the detected gamma rays comprise at least one of naturally emitted gamma rays, neutron activation gamma rays, thermal neutron capture gamma rays and neutron inelastic collision gamma rays. 17. The method of claim 14 wherein the function comprises an average of a difference between the accurate value and each precise value over the selected axial interval. 18. (canceled) 19. The method of claim 17 wherein the difference is a function of the accurate value and the precise values over the selected axial interval. 20. (canceled) 21. The method of claim 14 wherein the function comprises a polynomial expression relating the accurate value to the precise values over the selected axial interval. 22. (canceled) 23. (canceled) 24. The method of claim 14 wherein the at least one selected axial position is at a midpoint of the axial interval. 25. (canceled) 26. (canceled) 27. (canceled) | 2,800 |
11,602 | 11,602 | 15,396,031 | 2,838 | Embodiments include systems, methods, and apparatuses for controlling off-time during a burst mode in an LLC converter. In one embodiment, a circuit comprises an LLC converter having a primary side and a burst mode controller, the burst mode controller configured to monitor, on the primary side of the LLC converter, electrical current, and in response to a determination that the electrical current is below a first threshold, increase an off-time for switches in the LLC converter and in response to a determination that the electrical current is above a second threshold that is higher than the first threshold, decrease the off-time for the switches in the LLC converter. | 1. A circuit comprising:
an LLC converter having a primary side; and a burst mode controller configured to:
monitor, on the primary side of the LLC converter, electrical current; and
in response to a determination that the electrical current is below a first threshold:
increase an off-time for switches in the LLC converter; and
in response to a determination that the electrical current is above a second threshold that is higher than the first threshold:
decrease the off-time for the switches in the LLC converter. 2. The circuit of claim 1, wherein at least one of the first threshold and the second threshold are based on a target current. 3. The circuit of claim 2, wherein the burst mode controller is configured to increase the off-time and decrease the off-time only after determining that the electrical current is below the second threshold. 4. The circuit of claim 2, wherein the first threshold is fifty percent of the target current and wherein the second threshold is seventy-five percent of the target current. 5. The circuit of claim 1, wherein the burst mode controller is configured to repeat increasing the off-time over a series of switching cycles until the electrical current exceeds the first threshold. 6. The circuit of claim 1, wherein the burst mode controller is configured to repeat decreasing the off-time over a series of switching cycles until the electrical current falls below the second threshold. 7. The circuit of claim 6, wherein the off-time is a time period when switching does not occur in the LLC converter. 8. The circuit of claim 1, wherein the burst mode controller includes a peak detector, a current sensing device, an up/down counter, a timer, and control logic. 9. A method for regulating current in an LLC converter by monitoring current on a primary side of the LLC converter, the method comprising:
monitoring, on the primary side of the LLC converter, electrical current; and in response to determining that the electrical current is below a first threshold:
increasing an off-time for switches in the LLC converter; and
in response to determining that the electrical current is above a second threshold that is higher than the first threshold:
decreasing the off-time of the switches in the LLC converter. 10. The method of claim 9, wherein at least one of the first threshold and the second threshold are based on a target current. 11. The method of claim 10, wherein the increasing the off-time and the decreasing the off-time occurs only after determining that the electrical current is below the second threshold. 12. The method of claim 10, wherein the first threshold is fifty percent of the target current and wherein the second threshold is seventy-five percent of the target current. 13. The method of claim 9, wherein the increasing the off-time is repeated each switching cycle until the electrical current exceeds the first threshold. 14. The method of claim 9, wherein the decreasing the off-time is repeated each switching cycle until the electrical current falls below the second threshold. 15. The method of claim 9, wherein the off-time is a time period when switching does not occur in the LLC converter. 16. A circuit comprising:
an LLC converter having a primary side; and a burst mode controller, the burst mode controller configured to:
monitor, on the primary side of the LLC converter, electrical current; and
in response to a determination that the electrical current is below a first threshold based on a target current:
increase the off-time for switches in the LLC converter each switching cycle until the electrical current exceeds the first threshold; and
in response to a determination that the electrical current is above a second threshold based on the target current and that is higher than the first threshold:
decrease the off-time of the switches in the LLC converter each switching cycle until the electrical current falls below the second threshold. 17. The circuit of claim 16, wherein the increasing the off-time and the decreasing the off-time occurs only after determining that the electrical current is below the second threshold. 18. The circuit of claim 16, wherein the first threshold is fifty percent of the target current and wherein the second threshold is seventy-five percent of the target current. 19. The circuit of claim 16, wherein the burst mode controller includes a peak detector, a current sensing device, an up/down counter, a timer, and control logic. | Embodiments include systems, methods, and apparatuses for controlling off-time during a burst mode in an LLC converter. In one embodiment, a circuit comprises an LLC converter having a primary side and a burst mode controller, the burst mode controller configured to monitor, on the primary side of the LLC converter, electrical current, and in response to a determination that the electrical current is below a first threshold, increase an off-time for switches in the LLC converter and in response to a determination that the electrical current is above a second threshold that is higher than the first threshold, decrease the off-time for the switches in the LLC converter.1. A circuit comprising:
an LLC converter having a primary side; and a burst mode controller configured to:
monitor, on the primary side of the LLC converter, electrical current; and
in response to a determination that the electrical current is below a first threshold:
increase an off-time for switches in the LLC converter; and
in response to a determination that the electrical current is above a second threshold that is higher than the first threshold:
decrease the off-time for the switches in the LLC converter. 2. The circuit of claim 1, wherein at least one of the first threshold and the second threshold are based on a target current. 3. The circuit of claim 2, wherein the burst mode controller is configured to increase the off-time and decrease the off-time only after determining that the electrical current is below the second threshold. 4. The circuit of claim 2, wherein the first threshold is fifty percent of the target current and wherein the second threshold is seventy-five percent of the target current. 5. The circuit of claim 1, wherein the burst mode controller is configured to repeat increasing the off-time over a series of switching cycles until the electrical current exceeds the first threshold. 6. The circuit of claim 1, wherein the burst mode controller is configured to repeat decreasing the off-time over a series of switching cycles until the electrical current falls below the second threshold. 7. The circuit of claim 6, wherein the off-time is a time period when switching does not occur in the LLC converter. 8. The circuit of claim 1, wherein the burst mode controller includes a peak detector, a current sensing device, an up/down counter, a timer, and control logic. 9. A method for regulating current in an LLC converter by monitoring current on a primary side of the LLC converter, the method comprising:
monitoring, on the primary side of the LLC converter, electrical current; and in response to determining that the electrical current is below a first threshold:
increasing an off-time for switches in the LLC converter; and
in response to determining that the electrical current is above a second threshold that is higher than the first threshold:
decreasing the off-time of the switches in the LLC converter. 10. The method of claim 9, wherein at least one of the first threshold and the second threshold are based on a target current. 11. The method of claim 10, wherein the increasing the off-time and the decreasing the off-time occurs only after determining that the electrical current is below the second threshold. 12. The method of claim 10, wherein the first threshold is fifty percent of the target current and wherein the second threshold is seventy-five percent of the target current. 13. The method of claim 9, wherein the increasing the off-time is repeated each switching cycle until the electrical current exceeds the first threshold. 14. The method of claim 9, wherein the decreasing the off-time is repeated each switching cycle until the electrical current falls below the second threshold. 15. The method of claim 9, wherein the off-time is a time period when switching does not occur in the LLC converter. 16. A circuit comprising:
an LLC converter having a primary side; and a burst mode controller, the burst mode controller configured to:
monitor, on the primary side of the LLC converter, electrical current; and
in response to a determination that the electrical current is below a first threshold based on a target current:
increase the off-time for switches in the LLC converter each switching cycle until the electrical current exceeds the first threshold; and
in response to a determination that the electrical current is above a second threshold based on the target current and that is higher than the first threshold:
decrease the off-time of the switches in the LLC converter each switching cycle until the electrical current falls below the second threshold. 17. The circuit of claim 16, wherein the increasing the off-time and the decreasing the off-time occurs only after determining that the electrical current is below the second threshold. 18. The circuit of claim 16, wherein the first threshold is fifty percent of the target current and wherein the second threshold is seventy-five percent of the target current. 19. The circuit of claim 16, wherein the burst mode controller includes a peak detector, a current sensing device, an up/down counter, a timer, and control logic. | 2,800 |
11,603 | 11,603 | 15,879,956 | 2,855 | A force sensing compliant enclosure for an electronic device may include at least one deformable housing wall. At least one strain concentration portion may be located on the deformable housing wall where strain caused by application of a force that deforms the deformable housing wall is greater than at other portions of the deformable housing wall. The strain concentrating portion may have a second thickness that is thinner than other portions of the deformable housing wall. One or more sensors may be positioned in the strain concentration portion and may sense strain caused by the application of the force that deforms the deformable housing wall. | 1. A smart phone, comprising:
a housing, comprising:
an internal wall surface forming an interior perimeter of the housing;
a first indentation defined by the internal wall surface wherein the first indentation has a first middle portion at which the first indentation is thinnest; and
a second indentation defined by the internal wall surface wherein the second indentation has a second middle portion at which the second indentation is thinnest, the first and second indentations disposed on opposite sides of the interior perimeter of the housing;
a display coupled to the housing; a first group of strain gauges positioned in the first indentation at the first middle portion; a second group of strain gauges positioned in the second indentation at the second middle portion; and a processing unit communicably coupled to the first and second groups of strain gauges that is operable to receive data from the first and second groups of strain gauges and determine that force is exerted on the housing. 2. The smart phone of claim 1, wherein the first group of strain gauges are spaced equidistant from each other. 3. The smart phone of claim 1, wherein the processing unit determines the force using data from multiple of the first group of strain gauges. 4. The smart phone of claim 1, wherein the processing unit determines the force using data from both the first group of strain gauges and the second group of strain gauges. 5. The smart phone of claim 1, wherein the first group of strain gauges comprises a row of strain gauges positioned in the first indentation. 6. The smart phone of claim 1, wherein the housing is metal. 7. The smart phone of claim 1, wherein the processing unit determines a user input is received using the determined force. 8. A cellular telephone, comprising:
a housing, comprising:
an internal wall surface forming an interior perimeter of the housing;
a first groove defined by the internal wall surface wherein the first groove has a first middle at which the first groove is thinnest; and
a second groove defined by the internal wall surface wherein the second groove has a second middle at which the second groove is thinnest;
a display coupled to the housing; a first set of strain gauges positioned in the first groove; a second set of strain gauges positioned in the second groove; and a processing unit operable determine that force is exerted on the housing using data received from the first and second sets of strain gauges. 9. The cellular telephone of claim 8, wherein the processing unit launches an application using the data. 10. The cellular telephone of claim 8, wherein the processing unit wakes the cellular telephone out of a sleep mode using the data. 11. The cellular telephone of claim 8, wherein the first groove is positioned perpendicular to the display. 12. The cellular telephone of claim 8, wherein the processing unit determines an amount of the force using the data. 13. The cellular telephone of claim 8, wherein a thickness of the first groove is thinner than another portion of the housing. 14. The cellular telephone of claim 8, wherein the first set of strain gauges is positioned parallel to the second set of strain gauges. 15. A mobile computer, comprising:
a housing, comprising:
an internal wall surface forming an interior perimeter of the housing; and
a notch positioned on the internal wall surface wherein the notch is thinnest at a middle of the notch;
a display coupled to the housing; sensors located at the notch; and a processing unit operable determine that force is exerted on the housing using strain detected using the sensors. 16. The mobile computer of claim 15, wherein the processing unit is operable to alter information presented on the display using the detected force. 17. The mobile computer of claim 15, wherein the processing unit is operable to determine whether the force exceeds a threshold. 18. The mobile computer of claim 15, wherein the sensors each comprise parallel plates. 19. The mobile computer of claim 15, wherein the sensors comprise a series of seven sensors. 20. The mobile computer of claim 15, wherein the sensors include a flex circuit. | A force sensing compliant enclosure for an electronic device may include at least one deformable housing wall. At least one strain concentration portion may be located on the deformable housing wall where strain caused by application of a force that deforms the deformable housing wall is greater than at other portions of the deformable housing wall. The strain concentrating portion may have a second thickness that is thinner than other portions of the deformable housing wall. One or more sensors may be positioned in the strain concentration portion and may sense strain caused by the application of the force that deforms the deformable housing wall.1. A smart phone, comprising:
a housing, comprising:
an internal wall surface forming an interior perimeter of the housing;
a first indentation defined by the internal wall surface wherein the first indentation has a first middle portion at which the first indentation is thinnest; and
a second indentation defined by the internal wall surface wherein the second indentation has a second middle portion at which the second indentation is thinnest, the first and second indentations disposed on opposite sides of the interior perimeter of the housing;
a display coupled to the housing; a first group of strain gauges positioned in the first indentation at the first middle portion; a second group of strain gauges positioned in the second indentation at the second middle portion; and a processing unit communicably coupled to the first and second groups of strain gauges that is operable to receive data from the first and second groups of strain gauges and determine that force is exerted on the housing. 2. The smart phone of claim 1, wherein the first group of strain gauges are spaced equidistant from each other. 3. The smart phone of claim 1, wherein the processing unit determines the force using data from multiple of the first group of strain gauges. 4. The smart phone of claim 1, wherein the processing unit determines the force using data from both the first group of strain gauges and the second group of strain gauges. 5. The smart phone of claim 1, wherein the first group of strain gauges comprises a row of strain gauges positioned in the first indentation. 6. The smart phone of claim 1, wherein the housing is metal. 7. The smart phone of claim 1, wherein the processing unit determines a user input is received using the determined force. 8. A cellular telephone, comprising:
a housing, comprising:
an internal wall surface forming an interior perimeter of the housing;
a first groove defined by the internal wall surface wherein the first groove has a first middle at which the first groove is thinnest; and
a second groove defined by the internal wall surface wherein the second groove has a second middle at which the second groove is thinnest;
a display coupled to the housing; a first set of strain gauges positioned in the first groove; a second set of strain gauges positioned in the second groove; and a processing unit operable determine that force is exerted on the housing using data received from the first and second sets of strain gauges. 9. The cellular telephone of claim 8, wherein the processing unit launches an application using the data. 10. The cellular telephone of claim 8, wherein the processing unit wakes the cellular telephone out of a sleep mode using the data. 11. The cellular telephone of claim 8, wherein the first groove is positioned perpendicular to the display. 12. The cellular telephone of claim 8, wherein the processing unit determines an amount of the force using the data. 13. The cellular telephone of claim 8, wherein a thickness of the first groove is thinner than another portion of the housing. 14. The cellular telephone of claim 8, wherein the first set of strain gauges is positioned parallel to the second set of strain gauges. 15. A mobile computer, comprising:
a housing, comprising:
an internal wall surface forming an interior perimeter of the housing; and
a notch positioned on the internal wall surface wherein the notch is thinnest at a middle of the notch;
a display coupled to the housing; sensors located at the notch; and a processing unit operable determine that force is exerted on the housing using strain detected using the sensors. 16. The mobile computer of claim 15, wherein the processing unit is operable to alter information presented on the display using the detected force. 17. The mobile computer of claim 15, wherein the processing unit is operable to determine whether the force exceeds a threshold. 18. The mobile computer of claim 15, wherein the sensors each comprise parallel plates. 19. The mobile computer of claim 15, wherein the sensors comprise a series of seven sensors. 20. The mobile computer of claim 15, wherein the sensors include a flex circuit. | 2,800 |
11,604 | 11,604 | 14,745,734 | 2,837 | A computerized system, method and device for assisting in the tuning of a musical instrument to a user identified reference pitch comprising, a vibration sensor attachable to a musical instrument wirelessly connected to a computer device such as an iPhone, Android tablet, Windows phone, or other such smart devices (SD) having a display screen and software for receiving vibration data and computing and displaying the difference between the user input pitch and the instrument vibration frequency computed from the vibration data as, sharp, flat, or in tune, to tune the instrument. The system further provides a choice of either an audio or vibration alert signals for directing the user to increase or decrease the tone of the musical instrument matching the reference pitch enabling even visually impaired musicians who may not be able to visualize the data on a touch screen display of the smart device, to tune their instruments. | 1. A device for tuning a musical instrument, said device comprising:
a vibration sensor with a means for receiving a vibration output from a musical instrument; said vibration sensor comprising an analog to digital converter for converting said vibration output from said musical instrument to a digital value that represents the amplitude of said musical instrument vibrations during tuning; said vibration sensor comprising a microprocessor for receiving said digital value that represents the amplitude of said musical instrument vibrations from said analog to digital converter; wherein said microprocessor, stores, processes and analyzes said digital value to determine said instrument's vibration frequency and transmits said vibration frequency digital value to a computer device through a wireless transceiver located within said vibration sensor; and wherein a processor of said computer device compares and calculates a difference between said vibration frequency digital value of said musical instrument and a reference pitch value incorporated within said processor of said computer device and displays said difference between said vibration frequency digital value of said musical instrument and a reference pitch value as, sharp, flat, or in tune on said computer device display screen. 2. A system for tuning a musical instrument said system comprising:
a vibration sensor module for receiving and transmitting a digitized vibration output from said musical instrument: a computer device for receiving said digitized vibration output of said musical instrument from said vibration sensor module; and wherein a program within said computer device outputs an audio signal of varying audio frequencies related to the difference between a computed vibration frequency of said musical instrument and a reference pitch as one of sharp, flat or in tune for adjusting a tone of said musical instrument to said reference pitch. 3. The system as described in claim 2 wherein the program within said computer device activates a vibration alert output related to the difference between said computed vibration frequency of said musical instrument and said reference pitch providing a vibration output with varying vibrations per second indicating sharp, flat, or in tune to the user for adjusting the tone of the musical instrument. 4. A processor with a computer readable storage medium having executable program instructions for said processor to activate and operate a remote vibration sensor in a low power manner;
said processor determining a frequency of a vibration data received from said remote vibration sensor; said processor calculating a difference between a computed vibration frequency and a reference pitch frequency; and said processor graphing on a display screen of a computer device said difference between said computed vibration frequency and said reference pitch frequency. 5. A processor with a computer readable storage medium having executable program instructions as recited in claim 4 wherein said processor having executable program instructions to modulate an audio output of a computer device relative to a difference between said computed vibration frequency and said reference pitch. 6. A processor with a computer readable storage medium having executable program instructions as recited in claim 4, said processor having executable program instructions to activate and control a vibration alert output of a computer device signaling a difference between said computed vibration frequency and said reference pitch. 7. A system for detecting a vibration from a musical instrument and transmitting a vibration data wirelessly to a receiving computer device for use in computing and producing a difference between a vibration frequency of a musical instrument and a reference pitch, comprising:
a vibration detection module attachable to said musical instrument; said vibration detection module having a vibration sensor; an analog-to-digital converter connected to said vibration sensor to convert an output of a vibration from said musical instrument and digitize an amplitude of said vibration; a microcomputer with a readable storage medium having an executable code for receiving said digitized vibration amplitude data from said analog-to-digital converter; a radio frequency transceiver connected to said microcomputer receiving a formatted digitized vibration data from said microcomputer and transmitting said formatted digitized vibration data to a computer device programmed to receive said digitized vibration data from said vibration detection module; and a computer device determining reference pitch and calculating a difference between said reference pitch and said vibration frequency computed from said vibration data and displaying said difference on said computer device display screen. 8. The system for detecting the vibration from a musical instrument as recited in claim 7, further comprising an audible output indicating to the user the difference between the vibration data and the identified reference pitch using varying audio frequencies indicating sharp, flat or in tune to the user. 9. The system for detecting the vibration from a musical instrument as recited in claim 7, further comprising a vibration alert output indicating to the user the difference between the vibration data and the identified reference pitch using varying vibrations per second indicating sharp, flat or in tune to the user. 10. The system for detecting the vibration from a musical instrument as recited in claim 7, wherein said vibration sensor receives an inquiry from a computer device and transmits a device access code to said computer device to pair said vibration sensor to said computer device. 11. The system for detecting the vibration from a musical instrument as recited in claim 7, wherein the process of tuning said instrument starts with a computer device that is paired with the vibration sensor sending an inquiry signal to the vibration sensor to power on the vibration sensor to detect the instrument's acoustic vibrations and send the said acoustic vibrations to said analog to digital converter within said vibration detection module, wherein said analog to digital convertor digitizes said instrument's acoustic vibration amplitude which is processed and formatted by said microcomputer within said vibration detection module and sent to a computer device by said radio frequency transceiver, said computer device computes a difference between a reference pitch and said instrument's computed frequency pitch and displays said difference as one of sharp, flat, or in tune on said computer device display screen. 12. The system for detecting the vibration from a musical instrument as recited in claim 7, wherein said computer device is one of a smart phone, tablet, and other smart devices. | A computerized system, method and device for assisting in the tuning of a musical instrument to a user identified reference pitch comprising, a vibration sensor attachable to a musical instrument wirelessly connected to a computer device such as an iPhone, Android tablet, Windows phone, or other such smart devices (SD) having a display screen and software for receiving vibration data and computing and displaying the difference between the user input pitch and the instrument vibration frequency computed from the vibration data as, sharp, flat, or in tune, to tune the instrument. The system further provides a choice of either an audio or vibration alert signals for directing the user to increase or decrease the tone of the musical instrument matching the reference pitch enabling even visually impaired musicians who may not be able to visualize the data on a touch screen display of the smart device, to tune their instruments.1. A device for tuning a musical instrument, said device comprising:
a vibration sensor with a means for receiving a vibration output from a musical instrument; said vibration sensor comprising an analog to digital converter for converting said vibration output from said musical instrument to a digital value that represents the amplitude of said musical instrument vibrations during tuning; said vibration sensor comprising a microprocessor for receiving said digital value that represents the amplitude of said musical instrument vibrations from said analog to digital converter; wherein said microprocessor, stores, processes and analyzes said digital value to determine said instrument's vibration frequency and transmits said vibration frequency digital value to a computer device through a wireless transceiver located within said vibration sensor; and wherein a processor of said computer device compares and calculates a difference between said vibration frequency digital value of said musical instrument and a reference pitch value incorporated within said processor of said computer device and displays said difference between said vibration frequency digital value of said musical instrument and a reference pitch value as, sharp, flat, or in tune on said computer device display screen. 2. A system for tuning a musical instrument said system comprising:
a vibration sensor module for receiving and transmitting a digitized vibration output from said musical instrument: a computer device for receiving said digitized vibration output of said musical instrument from said vibration sensor module; and wherein a program within said computer device outputs an audio signal of varying audio frequencies related to the difference between a computed vibration frequency of said musical instrument and a reference pitch as one of sharp, flat or in tune for adjusting a tone of said musical instrument to said reference pitch. 3. The system as described in claim 2 wherein the program within said computer device activates a vibration alert output related to the difference between said computed vibration frequency of said musical instrument and said reference pitch providing a vibration output with varying vibrations per second indicating sharp, flat, or in tune to the user for adjusting the tone of the musical instrument. 4. A processor with a computer readable storage medium having executable program instructions for said processor to activate and operate a remote vibration sensor in a low power manner;
said processor determining a frequency of a vibration data received from said remote vibration sensor; said processor calculating a difference between a computed vibration frequency and a reference pitch frequency; and said processor graphing on a display screen of a computer device said difference between said computed vibration frequency and said reference pitch frequency. 5. A processor with a computer readable storage medium having executable program instructions as recited in claim 4 wherein said processor having executable program instructions to modulate an audio output of a computer device relative to a difference between said computed vibration frequency and said reference pitch. 6. A processor with a computer readable storage medium having executable program instructions as recited in claim 4, said processor having executable program instructions to activate and control a vibration alert output of a computer device signaling a difference between said computed vibration frequency and said reference pitch. 7. A system for detecting a vibration from a musical instrument and transmitting a vibration data wirelessly to a receiving computer device for use in computing and producing a difference between a vibration frequency of a musical instrument and a reference pitch, comprising:
a vibration detection module attachable to said musical instrument; said vibration detection module having a vibration sensor; an analog-to-digital converter connected to said vibration sensor to convert an output of a vibration from said musical instrument and digitize an amplitude of said vibration; a microcomputer with a readable storage medium having an executable code for receiving said digitized vibration amplitude data from said analog-to-digital converter; a radio frequency transceiver connected to said microcomputer receiving a formatted digitized vibration data from said microcomputer and transmitting said formatted digitized vibration data to a computer device programmed to receive said digitized vibration data from said vibration detection module; and a computer device determining reference pitch and calculating a difference between said reference pitch and said vibration frequency computed from said vibration data and displaying said difference on said computer device display screen. 8. The system for detecting the vibration from a musical instrument as recited in claim 7, further comprising an audible output indicating to the user the difference between the vibration data and the identified reference pitch using varying audio frequencies indicating sharp, flat or in tune to the user. 9. The system for detecting the vibration from a musical instrument as recited in claim 7, further comprising a vibration alert output indicating to the user the difference between the vibration data and the identified reference pitch using varying vibrations per second indicating sharp, flat or in tune to the user. 10. The system for detecting the vibration from a musical instrument as recited in claim 7, wherein said vibration sensor receives an inquiry from a computer device and transmits a device access code to said computer device to pair said vibration sensor to said computer device. 11. The system for detecting the vibration from a musical instrument as recited in claim 7, wherein the process of tuning said instrument starts with a computer device that is paired with the vibration sensor sending an inquiry signal to the vibration sensor to power on the vibration sensor to detect the instrument's acoustic vibrations and send the said acoustic vibrations to said analog to digital converter within said vibration detection module, wherein said analog to digital convertor digitizes said instrument's acoustic vibration amplitude which is processed and formatted by said microcomputer within said vibration detection module and sent to a computer device by said radio frequency transceiver, said computer device computes a difference between a reference pitch and said instrument's computed frequency pitch and displays said difference as one of sharp, flat, or in tune on said computer device display screen. 12. The system for detecting the vibration from a musical instrument as recited in claim 7, wherein said computer device is one of a smart phone, tablet, and other smart devices. | 2,800 |
11,605 | 11,605 | 14,895,967 | 2,855 | The invention concerns a heat-sensitive resistor with a negative or positive temperature coefficient, comprising respectively an antimony-doped tin oxide-based resistive element or a carbon black-based resistive element, containing a polymer having a dielectric constant between 2 and 3, a molar mass between 50000 and 150000 g/mol, and a glass transition temperature Tg between 40 and 100° C. | 1. A heat-sensitive resistor of negative or positive temperature coefficient, respectively comprising a resistive element based on antimony tin oxide or a resistive element based on carbon black, containing a polymer having a dielectric constant between 2 and 3, a molar mass between 50,000 and 150,000 g/mol, and a glass transition temperature Tg between 40 and 100° C. 2. The heat-sensitive resistor of claim 1, wherein the polymer belongs to the family of styrenic polymers or to the family of fluorinated polymers. 3. The heat-sensitive resistor of claim 1, wherein the resistive element comprises from 5% to 40% by mass of dry extract of the polymer with respect to the total mass of the resistive element. 4. The heat-sensitive resistor of claim 1, of positive temperature coefficient having an adjustable threshold temperature with a resistance which is constant below said threshold and which increases along with temperature above said threshold comprising, in series, a first resistive track made of a heat-sensitive paste of positive temperature coefficient, PTC, and a second resistive track made of a heat-sensitive paste of negative temperature coefficient, NTC. 5. A method of manufacturing a heat-sensitive resistor of negative or positive temperature coefficient, comprising the steps of:
forming a first solution comprising antimony tin oxide or carbon black containing a polymer having a dielectric constant between 2 and 3, a molar mass between 50,000 and 150,000 g/mol, and a glass transition temperature Tg between 40 and 100° C.; forming portions of the first solution on a support; and heating the portions. 6. The method of claim 5, wherein the step of manufacturing the first solution comprises the step of:
providing a second solution comprising antimony tin oxide or carbon black and a first solvent; providing a third solution comprising the polymer and a second solvent; and mixing the second and third solutions. 7. The method of claim 6, wherein the third solution is by a mass proportion smaller than 30%, preferably from 10 to 30% with respect to the total mass of the first solution. 8. The method of claim 6, the third solution comprises from 15 to 30% by mass, for example, 25%, of the polymer in from 85 to 70% by mass, for example, 75%, of the second solvent. 9. The method of claim 6, wherein the first solvent is selected from the group comprising cyclopentanone, ethyl acetate, tetrahydrofuran, acetone, 3-hexanone, and 2-pentanone for antimony tin oxide or the group comprising cyclopentanone, dibutyl carbitol, and ethylene glycol diacetate for carbon black. 10. The method of claim 6, wherein the second solvent has an evaporation temperature in the range from 100 to 170° C. 11. The method of claim 6, wherein the polymer belongs to the family of styrenic polymers or to the family of fluorinated polymers. 12. The method of claim 11, wherein the second solvent is selected from the group comprising toluene or butyl acetate for styrenic polymers or perfluorotributylamine (FC43) for fluorinated polymers. 13. The method of claim 6, wherein the evaporation temperature of the first solvent is greater than the evaporation temperature of the second solvent. 14. The method of claim 5 of manufacturing a heat-sensitive resistor of positive temperature coefficient having an adjustable temperature threshold with a resistance which is constant below said threshold and which increases along with temperature above said threshold, comprising the steps of:
forming in series on the support a first portion made of a heat-sensitive paste of positive temperature coefficient, PTC, and a second portion made of a heat-sensitive paste of negative temperature coefficient, NTC, the first and/or the second portion being formed with the first solution; and
heating the first and second portions to form first and second resistive tracks. | The invention concerns a heat-sensitive resistor with a negative or positive temperature coefficient, comprising respectively an antimony-doped tin oxide-based resistive element or a carbon black-based resistive element, containing a polymer having a dielectric constant between 2 and 3, a molar mass between 50000 and 150000 g/mol, and a glass transition temperature Tg between 40 and 100° C.1. A heat-sensitive resistor of negative or positive temperature coefficient, respectively comprising a resistive element based on antimony tin oxide or a resistive element based on carbon black, containing a polymer having a dielectric constant between 2 and 3, a molar mass between 50,000 and 150,000 g/mol, and a glass transition temperature Tg between 40 and 100° C. 2. The heat-sensitive resistor of claim 1, wherein the polymer belongs to the family of styrenic polymers or to the family of fluorinated polymers. 3. The heat-sensitive resistor of claim 1, wherein the resistive element comprises from 5% to 40% by mass of dry extract of the polymer with respect to the total mass of the resistive element. 4. The heat-sensitive resistor of claim 1, of positive temperature coefficient having an adjustable threshold temperature with a resistance which is constant below said threshold and which increases along with temperature above said threshold comprising, in series, a first resistive track made of a heat-sensitive paste of positive temperature coefficient, PTC, and a second resistive track made of a heat-sensitive paste of negative temperature coefficient, NTC. 5. A method of manufacturing a heat-sensitive resistor of negative or positive temperature coefficient, comprising the steps of:
forming a first solution comprising antimony tin oxide or carbon black containing a polymer having a dielectric constant between 2 and 3, a molar mass between 50,000 and 150,000 g/mol, and a glass transition temperature Tg between 40 and 100° C.; forming portions of the first solution on a support; and heating the portions. 6. The method of claim 5, wherein the step of manufacturing the first solution comprises the step of:
providing a second solution comprising antimony tin oxide or carbon black and a first solvent; providing a third solution comprising the polymer and a second solvent; and mixing the second and third solutions. 7. The method of claim 6, wherein the third solution is by a mass proportion smaller than 30%, preferably from 10 to 30% with respect to the total mass of the first solution. 8. The method of claim 6, the third solution comprises from 15 to 30% by mass, for example, 25%, of the polymer in from 85 to 70% by mass, for example, 75%, of the second solvent. 9. The method of claim 6, wherein the first solvent is selected from the group comprising cyclopentanone, ethyl acetate, tetrahydrofuran, acetone, 3-hexanone, and 2-pentanone for antimony tin oxide or the group comprising cyclopentanone, dibutyl carbitol, and ethylene glycol diacetate for carbon black. 10. The method of claim 6, wherein the second solvent has an evaporation temperature in the range from 100 to 170° C. 11. The method of claim 6, wherein the polymer belongs to the family of styrenic polymers or to the family of fluorinated polymers. 12. The method of claim 11, wherein the second solvent is selected from the group comprising toluene or butyl acetate for styrenic polymers or perfluorotributylamine (FC43) for fluorinated polymers. 13. The method of claim 6, wherein the evaporation temperature of the first solvent is greater than the evaporation temperature of the second solvent. 14. The method of claim 5 of manufacturing a heat-sensitive resistor of positive temperature coefficient having an adjustable temperature threshold with a resistance which is constant below said threshold and which increases along with temperature above said threshold, comprising the steps of:
forming in series on the support a first portion made of a heat-sensitive paste of positive temperature coefficient, PTC, and a second portion made of a heat-sensitive paste of negative temperature coefficient, NTC, the first and/or the second portion being formed with the first solution; and
heating the first and second portions to form first and second resistive tracks. | 2,800 |
11,606 | 11,606 | 15,137,182 | 2,834 | A vehicle electric machine may include a rotor. The rotor may cooperate with a stator including a core having an end face, and end windings extending from the end face. A cooling tunnel may encase the end windings, sealing against the end face at opposing sides of the end windings, and defining an inlet configured to receive coolant. The cooling tunnel may be arranged to contain the coolant during passage over the end windings and direct the coolant toward an outlet. | 1. A vehicle electric machine comprising:
a rotor; a stator including a core having an end face, and end windings extending from the end face; and a cooling tunnel encasing the end windings, sealing against the end face at opposing sides of the end windings, and defining an inlet configured to receive coolant, the cooling tunnel arranged to contain the coolant during passage over the end windings and direct the coolant toward an outlet. 2. The vehicle electric machine of claim 1, wherein the cooling tunnel defines the outlet. 3. The vehicle electric machine of claim 2, wherein the outlet is at an end of the cooling tunnel opposite the inlet. 4. The vehicle electric machine of claim 1, wherein the cooling tunnel extends completely around a perimeter of the end windings. 5. The vehicle electric machine of claim 1, wherein the cooling tunnel has an arcuate cross-section. 6. The vehicle electric machine of claim 1, wherein the cooling tunnel has a rectangular cross-section. 7. A vehicle electric machine comprising:
a rotor; a stator including a core having an end face, and end windings extending from the end face; and a plurality of cooling tunnels encasing the end windings, sealing against the end face at opposing sides of the end windings and each end of the tunnels, and each defining an inlet configured to receive coolant, the cooling tunnels arranged to contain the coolant during passage over the end windings and direct the coolant toward outlets. 8. The vehicle electric machine of claim 7, wherein each of the cooling tunnels defines the outlet. 9. The vehicle electric machine of claim 8, wherein each of the outlets is at an end of each of the cooling tunnels opposite the inlet. 10. The vehicle electric machine of claim 7, wherein the cooling tunnels are situated in a second and fourth quadrant of the end face covering the windings therein. 11. The vehicle electric machine of claim 7, wherein the cooling tunnels have an arcuate cross-section. 12. The vehicle electric machine of claim 7, wherein the cooling tunnels have a rectangular cross-section. 13. A vehicle electric machine comprising:
a rotor; a stator including a core having an end face, and end windings extending from the end face; and a cooling conduit encasing the end windings, having a cooling tunnel portion and a cooling trough portion, the cooling tunnel portion sealing against the end face at opposing sides of the end windings and the cooling trough portion sealing against the end face at one of the sides of the end windings, and defining an inlet configured to receive coolant, the cooling conduit arranged to retain the coolant during passage over the end windings and direct the coolant toward an outlet. 14. The vehicle electric machine of claim 13, wherein the inlet is defined on the cooling tunnel portion. 15. The vehicle of claim 14, wherein the outlet is defined on the cooling trough portion. 16. The vehicle of claim 13, wherein the cooling conduit extends completely around a perimeter of the windings. 17. The vehicle electric machine of claim 13, wherein the cooling conduit has an arcuate cross-section. 18. The vehicle electric machine of claim 13, wherein the cooling conduit has a rectangular cross-section. | A vehicle electric machine may include a rotor. The rotor may cooperate with a stator including a core having an end face, and end windings extending from the end face. A cooling tunnel may encase the end windings, sealing against the end face at opposing sides of the end windings, and defining an inlet configured to receive coolant. The cooling tunnel may be arranged to contain the coolant during passage over the end windings and direct the coolant toward an outlet.1. A vehicle electric machine comprising:
a rotor; a stator including a core having an end face, and end windings extending from the end face; and a cooling tunnel encasing the end windings, sealing against the end face at opposing sides of the end windings, and defining an inlet configured to receive coolant, the cooling tunnel arranged to contain the coolant during passage over the end windings and direct the coolant toward an outlet. 2. The vehicle electric machine of claim 1, wherein the cooling tunnel defines the outlet. 3. The vehicle electric machine of claim 2, wherein the outlet is at an end of the cooling tunnel opposite the inlet. 4. The vehicle electric machine of claim 1, wherein the cooling tunnel extends completely around a perimeter of the end windings. 5. The vehicle electric machine of claim 1, wherein the cooling tunnel has an arcuate cross-section. 6. The vehicle electric machine of claim 1, wherein the cooling tunnel has a rectangular cross-section. 7. A vehicle electric machine comprising:
a rotor; a stator including a core having an end face, and end windings extending from the end face; and a plurality of cooling tunnels encasing the end windings, sealing against the end face at opposing sides of the end windings and each end of the tunnels, and each defining an inlet configured to receive coolant, the cooling tunnels arranged to contain the coolant during passage over the end windings and direct the coolant toward outlets. 8. The vehicle electric machine of claim 7, wherein each of the cooling tunnels defines the outlet. 9. The vehicle electric machine of claim 8, wherein each of the outlets is at an end of each of the cooling tunnels opposite the inlet. 10. The vehicle electric machine of claim 7, wherein the cooling tunnels are situated in a second and fourth quadrant of the end face covering the windings therein. 11. The vehicle electric machine of claim 7, wherein the cooling tunnels have an arcuate cross-section. 12. The vehicle electric machine of claim 7, wherein the cooling tunnels have a rectangular cross-section. 13. A vehicle electric machine comprising:
a rotor; a stator including a core having an end face, and end windings extending from the end face; and a cooling conduit encasing the end windings, having a cooling tunnel portion and a cooling trough portion, the cooling tunnel portion sealing against the end face at opposing sides of the end windings and the cooling trough portion sealing against the end face at one of the sides of the end windings, and defining an inlet configured to receive coolant, the cooling conduit arranged to retain the coolant during passage over the end windings and direct the coolant toward an outlet. 14. The vehicle electric machine of claim 13, wherein the inlet is defined on the cooling tunnel portion. 15. The vehicle of claim 14, wherein the outlet is defined on the cooling trough portion. 16. The vehicle of claim 13, wherein the cooling conduit extends completely around a perimeter of the windings. 17. The vehicle electric machine of claim 13, wherein the cooling conduit has an arcuate cross-section. 18. The vehicle electric machine of claim 13, wherein the cooling conduit has a rectangular cross-section. | 2,800 |
11,607 | 11,607 | 13,395,719 | 2,851 | A handheld tool battery charging unit, e.g., for a handheld machine tool battery, has at least one battery accommodation region and at least one detachable battery contact unit provided to be connected to at least one battery pack, as well as at least one charging connection element provided for receiving energy transmitted in a wireless manner. | 1-13. (canceled) 14. A handheld-tool battery charging apparatus, comprising:
at least one battery accommodation region; at least one detachable battery contact unit configured to be connected to at least one battery pack; and at least one charging connection unit configured to receive wirelessly transmitted energy. 15. The apparatus as recited in claim 14, further comprising:
at least one detachable machine contact unit configured to transmit the energy to a handheld machine tool. 16. The apparatus as recited in claim 15, wherein the detachable battery contact unit and the detachable machine contact unit are configured in a complementary manner. 17. The apparatus as recited in claim 15, wherein the charging connection unit has an energy receiving coil. 18. The apparatus as recited in claim 15, wherein the detachable machine contact unit has a protective device which prevents energy absorption from a wire-bound charging device. 19. The apparatus as recited in claim 18, wherein the protective device prevents contacting of the wire-bound charging unit. 20. The apparatus as recited in claim 15, further comprising:
a monitoring electronics system configured to monitor at least one charging process. 21. The apparatus as recited in claim 15, further comprising:
a connecting element configured to connect at least one of the detachable battery contact unit, the detachable machine contact unit, and the charging connection unit on at least two different sides of the battery accommodation region. 22. The apparatus as recited in claim 15, wherein the charging connection unit at least partially encloses the handheld machine tool. 23. A system comprising:
a battery pack; and a handheld-tool battery charging apparatus, including:
at least one battery accommodation region;
at least one detachable battery contact unit configured to be connected to the battery pack; and
at least one charging connection unit configured to receive wirelessly transmitted energy. 24. The system as recited in claim 23, wherein the handheld-tool battery charging apparatus is configured to remain connected to the battery pack when the battery pack is separated from a handheld machine tool. 25. A system comprising:
a handheld machine tool; and a handheld-tool battery charging apparatus, including:
at least one battery accommodation region;
at least one detachable battery contact unit configured to be connected to the battery pack; and
at least one charging connection unit configured to receive wirelessly transmitted energy. 26. The system as recited in claim 25, wherein the handheld-tool battery charging apparatus is configured to remain connected to the handheld machine tool when the battery pack is separated from the handheld machine tool. | A handheld tool battery charging unit, e.g., for a handheld machine tool battery, has at least one battery accommodation region and at least one detachable battery contact unit provided to be connected to at least one battery pack, as well as at least one charging connection element provided for receiving energy transmitted in a wireless manner.1-13. (canceled) 14. A handheld-tool battery charging apparatus, comprising:
at least one battery accommodation region; at least one detachable battery contact unit configured to be connected to at least one battery pack; and at least one charging connection unit configured to receive wirelessly transmitted energy. 15. The apparatus as recited in claim 14, further comprising:
at least one detachable machine contact unit configured to transmit the energy to a handheld machine tool. 16. The apparatus as recited in claim 15, wherein the detachable battery contact unit and the detachable machine contact unit are configured in a complementary manner. 17. The apparatus as recited in claim 15, wherein the charging connection unit has an energy receiving coil. 18. The apparatus as recited in claim 15, wherein the detachable machine contact unit has a protective device which prevents energy absorption from a wire-bound charging device. 19. The apparatus as recited in claim 18, wherein the protective device prevents contacting of the wire-bound charging unit. 20. The apparatus as recited in claim 15, further comprising:
a monitoring electronics system configured to monitor at least one charging process. 21. The apparatus as recited in claim 15, further comprising:
a connecting element configured to connect at least one of the detachable battery contact unit, the detachable machine contact unit, and the charging connection unit on at least two different sides of the battery accommodation region. 22. The apparatus as recited in claim 15, wherein the charging connection unit at least partially encloses the handheld machine tool. 23. A system comprising:
a battery pack; and a handheld-tool battery charging apparatus, including:
at least one battery accommodation region;
at least one detachable battery contact unit configured to be connected to the battery pack; and
at least one charging connection unit configured to receive wirelessly transmitted energy. 24. The system as recited in claim 23, wherein the handheld-tool battery charging apparatus is configured to remain connected to the battery pack when the battery pack is separated from a handheld machine tool. 25. A system comprising:
a handheld machine tool; and a handheld-tool battery charging apparatus, including:
at least one battery accommodation region;
at least one detachable battery contact unit configured to be connected to the battery pack; and
at least one charging connection unit configured to receive wirelessly transmitted energy. 26. The system as recited in claim 25, wherein the handheld-tool battery charging apparatus is configured to remain connected to the handheld machine tool when the battery pack is separated from the handheld machine tool. | 2,800 |
11,608 | 11,608 | 15,040,313 | 2,894 | A method for operating a multiple axis machine includes controlling drives of the machine with a machine control system and monitoring the machine with a fail-safe control system having first and second redundant channels. Each of the first and second channels receives first input target values and first input actual values from the machine control system, and compares first reference target values (based on the first input target values) with first reference actual values (based on the first input actual values). A fault reaction is triggered if there is a deviation between the compared values that exceeds a specified tolerance. The first input values comprise reference position values of a machine-fixed reference or time derivatives thereof, and the machine control system determines target and/or actual reference position values based on a transformation between reference position values of the machine-fixed reference and axial position values of the machine. | 1. A method for operating a multiple axis machine, wherein the machine includes a machine control system that controls drives of the machine, and a fail-safe control system that includes a first channel and a redundant, second channel which monitor the machine, the method comprising:
in the first channel:
receiving first input target values and first input actual values from the machine control system,
comparing first reference target values, which depend on the first input target values, with first reference actual values, which depend on the first input actual values, with each other, and
triggering a fault reaction when a deviation between the first reference target values and the first reference actual values exceeds a specified tolerance; and
in the second channel:
receiving first input target values and first input actual values from the machine control system,
comparing first reference target values, which depend on the first input target values, with first reference actual values, which depend on the first input actual values, and
triggering a fault reaction when a deviation between the first reference target values and the first reference actual values exceeds a specified tolerance;
wherein the first input target values and the first input actual values comprise at least one of reference position values of a machine-fixed reference of the machine, or time derivatives of the reference position values; and wherein the machine control system determines at least one of these target reference position values or actual reference position values based on a transformation between reference position values of the machine-fixed reference and axial position values of the machine. 2. The method of claim 1, wherein the multiple axis machine is a robotic manipulator. 3. The method of claim 1, wherein the second channel of the fail-safe control system is dissimilar from the first channel. 4. The method of claim 1, further comprising:
in the first channel:
receiving second input target values and second input actual values, comparing second target values, which depend on the second input target values, with second reference actual values, which depend on the second input actual values, and
triggering a fault reaction when a deviation between the second reference target values and the second reference actual values exceeds a specified tolerance; and
in the second channel:
receiving second input target values and second input actual values, comparing second reference target values, which depend on the second input target values, with second reference actual values, which depend on the second input actual values, and
triggering a fault reaction when a deviation between the second reference target values and second reference actual values exceeds a specified tolerance;
wherein the second input target values and the second input actual values comprise at least one of the axial position values of the machine or time derivatives of the axial position values. 5. The method of claim 4, wherein the machine control system determines the target axial position values which the first and second channels receive from the machine control system, on the basis of a transformation between the reference position values of the machine-fixed reference and the axial position values of the machine. 6. The method of claim 1, wherein at least one of the input target values, the reference target values, or the reference actual values are determined on the basis of lag errors, wherein the lag errors are determined in the drive control units and/or by time differentiation. 7. The method of claim 1, wherein the first and second channels receive from the machine control system at least one of:
the same first input target values; the same second input target values; or the same first input actual values. 8. The method of claim 1, wherein the first and second channels receive redundantly determined second input actual values from an acquisition means. 9. The method of claim 1, wherein the first and second channels compare the respective reference target values and/or reference actual values with preset threshold values and trigger a fault reaction in the event that a deviation exceeds a specified tolerance. 10. The method of claim 9, wherein the preset threshold values are variable. 11. The method of claim 1, further comprising:
carrying out a self-test with the fail-safe control system; and triggering a fault reaction in the event that the self-test indicates a malfunction. 12. The method of claim 11, wherein the self-test is carried out cyclically. 13. The method of claim 1, further comprising triggering a fault reaction in the event that the fail-safe control system receives an external error signal. 14. A system for operating a multiple axis machine, said system comprising:
a machine control system for controlling the drives of the machine; a fail-safe control system configured for monitoring the machine and that comprises a first channel and a redundant, second channel; a storage medium including program code that, when executed by the fail-safe control system, causes the fail-safe control system to: in the first channel:
receive first input target values and first input actual values from the machine control system,
compare first reference target values, which depend on the first input target values, with first reference actual values, which depend on the first input actual values, with each other, and
trigger a fault reaction when a deviation between the first reference target values and the first reference actual values exceeds a specified tolerance; and
in the second channel:
receive first input target values and first input actual values from the machine control system,
compare first reference target values, which depend on the first input target values, with first reference actual values, which depend on the first input actual values, and
trigger a fault reaction when a deviation between the first reference target values and the first reference actual values exceeds a specified tolerance;
wherein the first input target values and the first input actual values comprise at least one of reference position values of a machine-fixed reference of the machine or, time derivatives of the reference position values; and wherein the machine control system determines at least one of target reference position values or actual reference position values based on a transformation between the reference position values of the machine-fixed reference and axial position values of the machine. 15. The system of claim 14, wherein the multiple axis machine is a robotic manipulator. 16. The system of claim 14, wherein the second channel of the fail-safe control system is dissimilar from the first channel. 17. An arrangement comprising a robotic manipulator and the system of claim 14. 18. A computer program product for use with a multiple axis machine, wherein the machine includes a machine control system that controls drives of the machine, and a fail-safe control system that includes a first channel and a redundant, second channel which monitor the machine, the computer program product having programming code stored on a non-transitory machine readable data medium, the programming code configured to, when executed by the fail-safe control system, cause the fail-safe control system to:
in the first channel:
receive first input target values and first input actual values from the machine control system,
compare first reference target values, which depend on the first input target values, with first reference actual values, which depend on the first input actual values, with each other, and
trigger a fault reaction when a deviation between the first reference target values and the first reference actual values exceeds a specified tolerance; and
in the second channel:
receive first input target values and first input actual values from the machine control system,
compare first reference target values, which depend on the first input target values, with first reference actual values, which depend on the first input actual values, and
trigger a fault reaction when a deviation between the first reference target values and the first reference actual values exceeds a specified tolerance;
wherein the first input target values and the first input actual values comprise at least one of reference position values of a machine-fixed reference of the machine, or time derivatives of the reference position values; and wherein the machine control system determines at least one of target reference position values or actual reference position values on the basis of a transformation between the reference position values of the machine-fixed reference and axial position values of the machine. | A method for operating a multiple axis machine includes controlling drives of the machine with a machine control system and monitoring the machine with a fail-safe control system having first and second redundant channels. Each of the first and second channels receives first input target values and first input actual values from the machine control system, and compares first reference target values (based on the first input target values) with first reference actual values (based on the first input actual values). A fault reaction is triggered if there is a deviation between the compared values that exceeds a specified tolerance. The first input values comprise reference position values of a machine-fixed reference or time derivatives thereof, and the machine control system determines target and/or actual reference position values based on a transformation between reference position values of the machine-fixed reference and axial position values of the machine.1. A method for operating a multiple axis machine, wherein the machine includes a machine control system that controls drives of the machine, and a fail-safe control system that includes a first channel and a redundant, second channel which monitor the machine, the method comprising:
in the first channel:
receiving first input target values and first input actual values from the machine control system,
comparing first reference target values, which depend on the first input target values, with first reference actual values, which depend on the first input actual values, with each other, and
triggering a fault reaction when a deviation between the first reference target values and the first reference actual values exceeds a specified tolerance; and
in the second channel:
receiving first input target values and first input actual values from the machine control system,
comparing first reference target values, which depend on the first input target values, with first reference actual values, which depend on the first input actual values, and
triggering a fault reaction when a deviation between the first reference target values and the first reference actual values exceeds a specified tolerance;
wherein the first input target values and the first input actual values comprise at least one of reference position values of a machine-fixed reference of the machine, or time derivatives of the reference position values; and wherein the machine control system determines at least one of these target reference position values or actual reference position values based on a transformation between reference position values of the machine-fixed reference and axial position values of the machine. 2. The method of claim 1, wherein the multiple axis machine is a robotic manipulator. 3. The method of claim 1, wherein the second channel of the fail-safe control system is dissimilar from the first channel. 4. The method of claim 1, further comprising:
in the first channel:
receiving second input target values and second input actual values, comparing second target values, which depend on the second input target values, with second reference actual values, which depend on the second input actual values, and
triggering a fault reaction when a deviation between the second reference target values and the second reference actual values exceeds a specified tolerance; and
in the second channel:
receiving second input target values and second input actual values, comparing second reference target values, which depend on the second input target values, with second reference actual values, which depend on the second input actual values, and
triggering a fault reaction when a deviation between the second reference target values and second reference actual values exceeds a specified tolerance;
wherein the second input target values and the second input actual values comprise at least one of the axial position values of the machine or time derivatives of the axial position values. 5. The method of claim 4, wherein the machine control system determines the target axial position values which the first and second channels receive from the machine control system, on the basis of a transformation between the reference position values of the machine-fixed reference and the axial position values of the machine. 6. The method of claim 1, wherein at least one of the input target values, the reference target values, or the reference actual values are determined on the basis of lag errors, wherein the lag errors are determined in the drive control units and/or by time differentiation. 7. The method of claim 1, wherein the first and second channels receive from the machine control system at least one of:
the same first input target values; the same second input target values; or the same first input actual values. 8. The method of claim 1, wherein the first and second channels receive redundantly determined second input actual values from an acquisition means. 9. The method of claim 1, wherein the first and second channels compare the respective reference target values and/or reference actual values with preset threshold values and trigger a fault reaction in the event that a deviation exceeds a specified tolerance. 10. The method of claim 9, wherein the preset threshold values are variable. 11. The method of claim 1, further comprising:
carrying out a self-test with the fail-safe control system; and triggering a fault reaction in the event that the self-test indicates a malfunction. 12. The method of claim 11, wherein the self-test is carried out cyclically. 13. The method of claim 1, further comprising triggering a fault reaction in the event that the fail-safe control system receives an external error signal. 14. A system for operating a multiple axis machine, said system comprising:
a machine control system for controlling the drives of the machine; a fail-safe control system configured for monitoring the machine and that comprises a first channel and a redundant, second channel; a storage medium including program code that, when executed by the fail-safe control system, causes the fail-safe control system to: in the first channel:
receive first input target values and first input actual values from the machine control system,
compare first reference target values, which depend on the first input target values, with first reference actual values, which depend on the first input actual values, with each other, and
trigger a fault reaction when a deviation between the first reference target values and the first reference actual values exceeds a specified tolerance; and
in the second channel:
receive first input target values and first input actual values from the machine control system,
compare first reference target values, which depend on the first input target values, with first reference actual values, which depend on the first input actual values, and
trigger a fault reaction when a deviation between the first reference target values and the first reference actual values exceeds a specified tolerance;
wherein the first input target values and the first input actual values comprise at least one of reference position values of a machine-fixed reference of the machine or, time derivatives of the reference position values; and wherein the machine control system determines at least one of target reference position values or actual reference position values based on a transformation between the reference position values of the machine-fixed reference and axial position values of the machine. 15. The system of claim 14, wherein the multiple axis machine is a robotic manipulator. 16. The system of claim 14, wherein the second channel of the fail-safe control system is dissimilar from the first channel. 17. An arrangement comprising a robotic manipulator and the system of claim 14. 18. A computer program product for use with a multiple axis machine, wherein the machine includes a machine control system that controls drives of the machine, and a fail-safe control system that includes a first channel and a redundant, second channel which monitor the machine, the computer program product having programming code stored on a non-transitory machine readable data medium, the programming code configured to, when executed by the fail-safe control system, cause the fail-safe control system to:
in the first channel:
receive first input target values and first input actual values from the machine control system,
compare first reference target values, which depend on the first input target values, with first reference actual values, which depend on the first input actual values, with each other, and
trigger a fault reaction when a deviation between the first reference target values and the first reference actual values exceeds a specified tolerance; and
in the second channel:
receive first input target values and first input actual values from the machine control system,
compare first reference target values, which depend on the first input target values, with first reference actual values, which depend on the first input actual values, and
trigger a fault reaction when a deviation between the first reference target values and the first reference actual values exceeds a specified tolerance;
wherein the first input target values and the first input actual values comprise at least one of reference position values of a machine-fixed reference of the machine, or time derivatives of the reference position values; and wherein the machine control system determines at least one of target reference position values or actual reference position values on the basis of a transformation between the reference position values of the machine-fixed reference and axial position values of the machine. | 2,800 |
11,609 | 11,609 | 15,010,022 | 2,817 | A method of forming bond pads includes providing a substrate including an integrated circuit (IC) device formed thereon having an oxidizable uppermost metal interconnect layer which provides a plurality of bond pads that are coupled to circuit nodes on the IC device. The plurality of bond pads include a metal bond pad area. At least one passivation layer provides a trench including dielectric sidewalls above the metal bond pad area. A ruthenium (Ru) layer is deposited directly on the dielectric sidewalls and directly on the metal bond pad area, which removes the need for a barrier layer lining the dielectric sidewalls of the trench. The Ru layer is patterned to provide a bond pad surface for the plurality of bond pads. | 1. A device, comprising:
a semiconductor substrate; a metal layer formed above the semiconductor substrate; a bond pad metal area formed above the metal layer and coupled to the metal layer using a via plug; a passivation layer patterned with an opening exposing the bond pad metal area, the passivation layer forming a trench with the bond pad metal area, the trench having passivation sidewalls; and a ruthenium (Ru) layer covering the passivation sidewalls and the bond pad metal area. 2. The device of claim 1, wherein the Ru layer is formed directly on the passivation sidewalls and the bond pad metal area. 3. The device of claim 1, further comprising:
a barrier layer formed directly on the passivation sidewalls and the bond pad metal area, the barrier layer directly interfacing the bond pad metal area with the Ru layer. 4. The device of claim 1, further comprising:
a barrier layer formed directly on the passivation sidewalls and the bond pad metal area; a nickel layer formed directly on the barrier layer and within the trench, wherein the Ru layer is positioned directly on the nickel layer. 5. The device of claim 1, further comprising:
a barrier layer formed directly on the passivation sidewalls and the bond pad metal area, the barrier layer interfacing the bond pad metal area with the Ru layer, the barrier layer includes a material selected from a group consisting of tantalum (Ta), tantalum nitride (TaN), titanium (Ti), titanium nitride (TiN), and combinations thereof. 6. The device of claim 1, further comprising:
a first transistor formed in the semiconductor substrate; a second transistor formed in the semiconductor substrate, wherein the metal layer couples the first transistor to the second transistor. 7. The device of claim 1, wherein the bond pad metal area and the Ru layer form a bond pad sized to receive a bond wire. 8. The device of claim 1, wherein the Ru layer has a thickness greater than 0.2 um. 9. The device of claim 1, wherein the passivation layer has a top surface above the trench and free of contact from the Ru layer. 10. An integrated circuit, comprising:
a substrate; transistors formed on the substrate; a metal layer formed above the substrate and interconnecting the transistors; an bond pad metal area formed above the metal layer and coupled to the metal layer using a via plug; a passivation layer patterned with an opening exposing the bond pad metal area, the passivation layer forming a trench with the bond pad metal area, the trench having passivation sidewalls; and a ruthenium (Ru) layer covering the passivation sidewalls and the bond pad metal area. 11. The integrated circuit of claim 10, wherein the Ru layer is formed directly on the passivation sidewalls and the bond pad metal area. 12. The integrated circuit of claim 10, further comprising:
a barrier layer formed directly on the passivation sidewalls and the bond pad metal area, the barrier layer directly interfacing the bond pad metal area with the Ru layer. 13. The integrated circuit of claim 10, further comprising:
a barrier layer formed directly on the passivation sidewalls and the bond pad metal area; a nickel layer formed directly on the barrier layer and within the trench, wherein the Ru layer is positioned directly on the nickel layer. 14. The integrated circuit of claim 10, wherein the bond pad metal area and the Ru layer form a bond pad sized to receive a bond wire. 15. The integrated circuit of claim 10, the Ru layer has a thickness greater than 0.2 um. 16. The integrated circuit of claim 10, wherein the passivation layer has a top surface above the trench and free of contact from the Ru layer. 17. A method, comprising:
patterning a passivation layer to define an opening exposing a bond pad metal area on a semiconductor wafer and to form a trench having passivation sidewalls surrounding the opening; and forming a ruthenium (Ru) layer to cover the passivation sidewalls and the bond pad metal area of the trench. 18. The method of claim 17, further comprising:
removing the Ru layer on a top surface of the passivation layer while preserving the Ru layer covering the trench. 19. The method of claim 17, wherein the forming the Ru layer includes:
depositing a Ru material directly onto the passivation sidewalls and the bond pad metal area. 20. The method of claim 17, further comprising:
forming a barrier layer directly on the passivation sidewalls and the bond pad metal area, the barrier layer including a material selected from a group consisting of tantalum (Ta), tantalum nitride (TaN), titanium (Ti), titanium nitride (TiN), and combinations thereof, wherein the forming the Ru layer includes depositing a Ru material directly onto the barrier layer. | A method of forming bond pads includes providing a substrate including an integrated circuit (IC) device formed thereon having an oxidizable uppermost metal interconnect layer which provides a plurality of bond pads that are coupled to circuit nodes on the IC device. The plurality of bond pads include a metal bond pad area. At least one passivation layer provides a trench including dielectric sidewalls above the metal bond pad area. A ruthenium (Ru) layer is deposited directly on the dielectric sidewalls and directly on the metal bond pad area, which removes the need for a barrier layer lining the dielectric sidewalls of the trench. The Ru layer is patterned to provide a bond pad surface for the plurality of bond pads.1. A device, comprising:
a semiconductor substrate; a metal layer formed above the semiconductor substrate; a bond pad metal area formed above the metal layer and coupled to the metal layer using a via plug; a passivation layer patterned with an opening exposing the bond pad metal area, the passivation layer forming a trench with the bond pad metal area, the trench having passivation sidewalls; and a ruthenium (Ru) layer covering the passivation sidewalls and the bond pad metal area. 2. The device of claim 1, wherein the Ru layer is formed directly on the passivation sidewalls and the bond pad metal area. 3. The device of claim 1, further comprising:
a barrier layer formed directly on the passivation sidewalls and the bond pad metal area, the barrier layer directly interfacing the bond pad metal area with the Ru layer. 4. The device of claim 1, further comprising:
a barrier layer formed directly on the passivation sidewalls and the bond pad metal area; a nickel layer formed directly on the barrier layer and within the trench, wherein the Ru layer is positioned directly on the nickel layer. 5. The device of claim 1, further comprising:
a barrier layer formed directly on the passivation sidewalls and the bond pad metal area, the barrier layer interfacing the bond pad metal area with the Ru layer, the barrier layer includes a material selected from a group consisting of tantalum (Ta), tantalum nitride (TaN), titanium (Ti), titanium nitride (TiN), and combinations thereof. 6. The device of claim 1, further comprising:
a first transistor formed in the semiconductor substrate; a second transistor formed in the semiconductor substrate, wherein the metal layer couples the first transistor to the second transistor. 7. The device of claim 1, wherein the bond pad metal area and the Ru layer form a bond pad sized to receive a bond wire. 8. The device of claim 1, wherein the Ru layer has a thickness greater than 0.2 um. 9. The device of claim 1, wherein the passivation layer has a top surface above the trench and free of contact from the Ru layer. 10. An integrated circuit, comprising:
a substrate; transistors formed on the substrate; a metal layer formed above the substrate and interconnecting the transistors; an bond pad metal area formed above the metal layer and coupled to the metal layer using a via plug; a passivation layer patterned with an opening exposing the bond pad metal area, the passivation layer forming a trench with the bond pad metal area, the trench having passivation sidewalls; and a ruthenium (Ru) layer covering the passivation sidewalls and the bond pad metal area. 11. The integrated circuit of claim 10, wherein the Ru layer is formed directly on the passivation sidewalls and the bond pad metal area. 12. The integrated circuit of claim 10, further comprising:
a barrier layer formed directly on the passivation sidewalls and the bond pad metal area, the barrier layer directly interfacing the bond pad metal area with the Ru layer. 13. The integrated circuit of claim 10, further comprising:
a barrier layer formed directly on the passivation sidewalls and the bond pad metal area; a nickel layer formed directly on the barrier layer and within the trench, wherein the Ru layer is positioned directly on the nickel layer. 14. The integrated circuit of claim 10, wherein the bond pad metal area and the Ru layer form a bond pad sized to receive a bond wire. 15. The integrated circuit of claim 10, the Ru layer has a thickness greater than 0.2 um. 16. The integrated circuit of claim 10, wherein the passivation layer has a top surface above the trench and free of contact from the Ru layer. 17. A method, comprising:
patterning a passivation layer to define an opening exposing a bond pad metal area on a semiconductor wafer and to form a trench having passivation sidewalls surrounding the opening; and forming a ruthenium (Ru) layer to cover the passivation sidewalls and the bond pad metal area of the trench. 18. The method of claim 17, further comprising:
removing the Ru layer on a top surface of the passivation layer while preserving the Ru layer covering the trench. 19. The method of claim 17, wherein the forming the Ru layer includes:
depositing a Ru material directly onto the passivation sidewalls and the bond pad metal area. 20. The method of claim 17, further comprising:
forming a barrier layer directly on the passivation sidewalls and the bond pad metal area, the barrier layer including a material selected from a group consisting of tantalum (Ta), tantalum nitride (TaN), titanium (Ti), titanium nitride (TiN), and combinations thereof, wherein the forming the Ru layer includes depositing a Ru material directly onto the barrier layer. | 2,800 |
11,610 | 11,610 | 15,030,236 | 2,853 | One exemplary embodiment of this disclosure relates to a method of inspecting a component of a gas turbine engine. The method includes performing a through-hole inspection, and determining a location of the plurality of holes from results of the through-hole inspection. | 1. A method of inspecting a component of a gas turbine engine, comprising:
performing a through-hole inspection; and determining a location of the plurality of holes from results of the through-hole inspection. 2. The method as recited in claim 1, wherein the through-hole inspection includes a flow thermography process. 3. The method as recited in claim 2, wherein the flow thermography process includes providing a flow of fluid within the component and taking a thermal image of the plurality of holes as the fluid exits the plurality of holes. 4. The method as recited in claim 3, wherein taking the thermal image includes taking a thermal video of the fluid exiting the plurality of holes. 5. The method as recited in claim 1, wherein the results of the through-hole inspection include a plurality pixels, and wherein a blockage is identified when a number of pixels within an acceptable hole location is below a minimum threshold. 6. The method as recited in claim 5, wherein a hole is determined to not be blocked if a number of pixels is greater than or equal to a minimum threshold within the acceptable hole location. 7. The method as recited in claim 1, wherein a misaligned hole is identified if the determined hole location is outside an acceptable hole location. 8. The method as recited in claim 7, wherein the results of the through-hole inspection include a plurality of sets of pixels, each of the sets of pixels corresponding to one of the plurality of holes. 9. The method as recited in claim 8, wherein the determined location of each of the plurality of holes is a centroid of a corresponding one of the plurality of sets of pixels. 10. The method as recited in claim 8, wherein the determined location of each of the plurality of holes is a pixel on a perimeter of a corresponding one of the plurality of sets of pixels. 11. The method as recited in claim 7, wherein the determined location of the plurality of holes is expressed relative to secondary datums. 12. The method as recited in claim 11, wherein the determined location of the plurality of holes is translated from being expressed in terms of secondary datums to being expressed in terms of primary datums. 13. The method as recited in claim 12, wherein the component is an airfoil including an airfoil section and a root, the secondary datums located on the root, and the primary datums located on the airfoil section. 14. An inspection assembly, comprising:
a thermal imaging camera; a fixture for supporting an engine component; a fluid source in communication with a passageway of the engine component; and a controller configured to perform a through-hole inspection on the component, and configured to determine a location of the plurality of holes from results of the through-hole inspection. 15. The assembly as recited in claim 14, including a conduit connecting the fluid source to the passageway. 16. The assembly as recited in claim 14, wherein the controller is configured to identify blocked and partially blocked holes by comparing a number of pixels within an acceptable hole location with a minimum threshold. 17. The assembly as recited in claim 14, wherein the controller compares the determined hole locations for each of the plurality of holes with acceptable hole locations to identify misaligned holes. 18. The assembly as recited in claim 14, wherein the controller is in communication with a model, the model including a minimum pixel threshold and acceptable hole locations. 19. The assembly as recited in claim 14, wherein the fixture supports the engine component at a root of the engine component. | One exemplary embodiment of this disclosure relates to a method of inspecting a component of a gas turbine engine. The method includes performing a through-hole inspection, and determining a location of the plurality of holes from results of the through-hole inspection.1. A method of inspecting a component of a gas turbine engine, comprising:
performing a through-hole inspection; and determining a location of the plurality of holes from results of the through-hole inspection. 2. The method as recited in claim 1, wherein the through-hole inspection includes a flow thermography process. 3. The method as recited in claim 2, wherein the flow thermography process includes providing a flow of fluid within the component and taking a thermal image of the plurality of holes as the fluid exits the plurality of holes. 4. The method as recited in claim 3, wherein taking the thermal image includes taking a thermal video of the fluid exiting the plurality of holes. 5. The method as recited in claim 1, wherein the results of the through-hole inspection include a plurality pixels, and wherein a blockage is identified when a number of pixels within an acceptable hole location is below a minimum threshold. 6. The method as recited in claim 5, wherein a hole is determined to not be blocked if a number of pixels is greater than or equal to a minimum threshold within the acceptable hole location. 7. The method as recited in claim 1, wherein a misaligned hole is identified if the determined hole location is outside an acceptable hole location. 8. The method as recited in claim 7, wherein the results of the through-hole inspection include a plurality of sets of pixels, each of the sets of pixels corresponding to one of the plurality of holes. 9. The method as recited in claim 8, wherein the determined location of each of the plurality of holes is a centroid of a corresponding one of the plurality of sets of pixels. 10. The method as recited in claim 8, wherein the determined location of each of the plurality of holes is a pixel on a perimeter of a corresponding one of the plurality of sets of pixels. 11. The method as recited in claim 7, wherein the determined location of the plurality of holes is expressed relative to secondary datums. 12. The method as recited in claim 11, wherein the determined location of the plurality of holes is translated from being expressed in terms of secondary datums to being expressed in terms of primary datums. 13. The method as recited in claim 12, wherein the component is an airfoil including an airfoil section and a root, the secondary datums located on the root, and the primary datums located on the airfoil section. 14. An inspection assembly, comprising:
a thermal imaging camera; a fixture for supporting an engine component; a fluid source in communication with a passageway of the engine component; and a controller configured to perform a through-hole inspection on the component, and configured to determine a location of the plurality of holes from results of the through-hole inspection. 15. The assembly as recited in claim 14, including a conduit connecting the fluid source to the passageway. 16. The assembly as recited in claim 14, wherein the controller is configured to identify blocked and partially blocked holes by comparing a number of pixels within an acceptable hole location with a minimum threshold. 17. The assembly as recited in claim 14, wherein the controller compares the determined hole locations for each of the plurality of holes with acceptable hole locations to identify misaligned holes. 18. The assembly as recited in claim 14, wherein the controller is in communication with a model, the model including a minimum pixel threshold and acceptable hole locations. 19. The assembly as recited in claim 14, wherein the fixture supports the engine component at a root of the engine component. | 2,800 |
11,611 | 11,611 | 16,179,507 | 2,887 | A tag assembly is described wherein the tag assembly is affixable to clothing and/or a body and wherein the assembly includes a support sheet; a tag disposed on the support sheet, the tag being configured to transmit a signal to a receiver; and, an expandable spacer structure disposed the support sheet, the expandable spacer structure providing a predetermined spacing between the tag and the body, the expandable spacer being configured to expand from a thin non-expanded state to a expanded state of a predetermined spacer thickness. | 1. A tag assembly to be worn by a participant of a sports event during the sports event, the tag assembly comprising:
a support sheet; a tag disposed on the support sheet, the tag comprising an antenna structure and the tag being configured to transmit a signal to a receiver that detects a passage of the participant; and an expandable spacer structure disposed on the support sheet spaced away from or partly or fully on top of the antenna structure, the expandable spacer structure providing a predetermined spacing between the tag and a body of a participant of the sports event, the expandable spacer structure being configured to expand from a non-expanded state to an expanded state of a predetermined spacer thickness, wherein the expandable spacer structure in the expanded state has a thickness in a range between 5 and 15 mm and in the non-expanded state has a thickness smaller than 5 mm, and wherein
the expandable spacer structure comprises one or more pieces of moisture absorbing material configured to expand at least in one dimension during the sports event in response to absorbing sweat from the participant. 2. The assembly according to claim 1, wherein
the tag comprises at least one metallic dipole antenna structure; and the expandable spacer structure is located at at least one of the following locations: (i) within a proximity of the antenna structure; and (ii) at least partly on top of the dipole antenna structure. 3. The assembly according to claim 1, wherein the tag is operative in the ultra-high frequency range. 4. The assembly according to claim 1, wherein the support sheet further comprises one or more metallic passive elements for directing at least part of the signal into a predetermined direction. 5. The assembly according to claim 4, wherein at least one of the passive elements is configured as a reflector. 6. The assembly according to claim 4, wherein at least one of the passive elements is configured as a director. 7. The assembly according to claim 4, wherein at least one of the passive elements is formed onto the support sheet using conductive ink or coating. 8. The assembly according to claim 1, wherein the assembly further comprises a non-expandable spacer structure disposed on the support sheet, the non-expandable spacer structure providing a predetermined spacing between the tag and the body when the expandable spacer structure is not in its expanded state. 9. The assembly according to claim 8, wherein the non-expandable spacer structure has a thickness between 2 mm and 6 mm. 10. The assembly according to claim 1, further comprising at least a dielectric layer disposed between the tag and the expandable spacer structure, wherein
the dielectric layer comprises a high-dielectric material; and a metallic thin-film antenna structure is impedance matched to a processor taking into account the presence of the dielectric layer in the direct proximity of the antenna structure. 11. A sports bib comprising:
a thin flexible sheet configured to be affixed to articles of clothing or a body of a participant of a sports event, the thin flexible sheet comprising a printed identifier on a front side; a tag structure comprising a processor connected to a metallic thin-film antenna structure, disposed on the back side of the thin flexible sheet, the tag structure being configured to transmit a signal to a receiver that detects a passage of the participant; and an expandable spacer structure disposed on the back side of the thin flexible sheet spaced away from or partly or fully on top of the antenna structure, the expandable spacer structure providing a predetermined spacing between the tag structure and the body, the expandable spacer structure being configured to expand from a non-expanded state to an expanded state of a predetermined spacer thickness, wherein the expandable spacer structure in the expanded state has a thickness in a range between 5 and 15 mm and in the non-expanded state has a thickness smaller than 5 mm, and wherein the expandable spacer structure comprises one or more pieces of moisture absorbing material configured to expand at least in one dimension during the sports event in response to absorbing sweat from the participant. | A tag assembly is described wherein the tag assembly is affixable to clothing and/or a body and wherein the assembly includes a support sheet; a tag disposed on the support sheet, the tag being configured to transmit a signal to a receiver; and, an expandable spacer structure disposed the support sheet, the expandable spacer structure providing a predetermined spacing between the tag and the body, the expandable spacer being configured to expand from a thin non-expanded state to a expanded state of a predetermined spacer thickness.1. A tag assembly to be worn by a participant of a sports event during the sports event, the tag assembly comprising:
a support sheet; a tag disposed on the support sheet, the tag comprising an antenna structure and the tag being configured to transmit a signal to a receiver that detects a passage of the participant; and an expandable spacer structure disposed on the support sheet spaced away from or partly or fully on top of the antenna structure, the expandable spacer structure providing a predetermined spacing between the tag and a body of a participant of the sports event, the expandable spacer structure being configured to expand from a non-expanded state to an expanded state of a predetermined spacer thickness, wherein the expandable spacer structure in the expanded state has a thickness in a range between 5 and 15 mm and in the non-expanded state has a thickness smaller than 5 mm, and wherein
the expandable spacer structure comprises one or more pieces of moisture absorbing material configured to expand at least in one dimension during the sports event in response to absorbing sweat from the participant. 2. The assembly according to claim 1, wherein
the tag comprises at least one metallic dipole antenna structure; and the expandable spacer structure is located at at least one of the following locations: (i) within a proximity of the antenna structure; and (ii) at least partly on top of the dipole antenna structure. 3. The assembly according to claim 1, wherein the tag is operative in the ultra-high frequency range. 4. The assembly according to claim 1, wherein the support sheet further comprises one or more metallic passive elements for directing at least part of the signal into a predetermined direction. 5. The assembly according to claim 4, wherein at least one of the passive elements is configured as a reflector. 6. The assembly according to claim 4, wherein at least one of the passive elements is configured as a director. 7. The assembly according to claim 4, wherein at least one of the passive elements is formed onto the support sheet using conductive ink or coating. 8. The assembly according to claim 1, wherein the assembly further comprises a non-expandable spacer structure disposed on the support sheet, the non-expandable spacer structure providing a predetermined spacing between the tag and the body when the expandable spacer structure is not in its expanded state. 9. The assembly according to claim 8, wherein the non-expandable spacer structure has a thickness between 2 mm and 6 mm. 10. The assembly according to claim 1, further comprising at least a dielectric layer disposed between the tag and the expandable spacer structure, wherein
the dielectric layer comprises a high-dielectric material; and a metallic thin-film antenna structure is impedance matched to a processor taking into account the presence of the dielectric layer in the direct proximity of the antenna structure. 11. A sports bib comprising:
a thin flexible sheet configured to be affixed to articles of clothing or a body of a participant of a sports event, the thin flexible sheet comprising a printed identifier on a front side; a tag structure comprising a processor connected to a metallic thin-film antenna structure, disposed on the back side of the thin flexible sheet, the tag structure being configured to transmit a signal to a receiver that detects a passage of the participant; and an expandable spacer structure disposed on the back side of the thin flexible sheet spaced away from or partly or fully on top of the antenna structure, the expandable spacer structure providing a predetermined spacing between the tag structure and the body, the expandable spacer structure being configured to expand from a non-expanded state to an expanded state of a predetermined spacer thickness, wherein the expandable spacer structure in the expanded state has a thickness in a range between 5 and 15 mm and in the non-expanded state has a thickness smaller than 5 mm, and wherein the expandable spacer structure comprises one or more pieces of moisture absorbing material configured to expand at least in one dimension during the sports event in response to absorbing sweat from the participant. | 2,800 |
11,612 | 11,612 | 15,500,609 | 2,834 | A compressor includes: a stator core including a plurality of teeth around which an aluminum winding wire is wound in a concentrated manner; a rotor core disposed on an inner diameter side of the stator core and including a plurality of magnet insertion holes; and a plurality of ferrite magnets inserted in the magnet insertion holes, in which when a width of a winding wire portion formed in each of the teeth is represented as A, a length in an axis direction of the stator core is represented as L, and the number of slots is represented as S, the stator core has a shape that satisfies a relation of 0.3<S×A÷L<2.2. | 1-6. (canceled) 7. A motor of a compressor comprising:
a stator core including a plurality of teeth and a plurality of slots formed between the teeth, an aluminum winding wire being wound around the teeth in a concentrated manner; a rotor core disposed on an inner diameter side of the stator core and including a plurality of magnet insertion holes; and a plurality of ferrite magnets inserted into the magnet insertion holes, wherein when a width of a winding wire portion formed in each of the teeth is represented as A, a length in an axis direction of the stator core is represented as L, and the number of the slots is represented as S, the stator core has a shape that satisfies a relation of 0.3<S×A÷L<2.2. 8. A motor of a compressor comprising:
a stator core including a plurality of teeth and a plurality of slots formed between the teeth, an aluminum winding wire being wound around the teeth in a concentrated manner; a rotor core disposed on an inner diameter side of the stator core and including a plurality of magnet insertion holes; a plurality of ferrite magnets inserted into the magnet insertion holes; and an oil separator installed on a shaft penetrating an upper surface side of the rotor core and positioned on an upper surface side of the rotor core, wherein when a width of a winding wire portion formed in each of the teeth is represented as A, a length in an axis direction of the stator core is represented as L, and the number of the slots is represented as S, the stator core has a shape that satisfies a relation of 0.3<S×A÷L<2.2, and in the rotor core, holes that are formed between the magnetic insertion holes and a shaft insertion hole and each have an opening to the oil separator side are formed. 9. The motor of a compressor according to claim 7, wherein a material having a lower specific heat than that of the ferrite magnets is used for the rotor core. 10. The motor of a compressor according to claim 8, wherein a material having a lower specific heat than that of the ferrite magnets is used for the rotor core. 11. The motor of a compressor according to claim 8, wherein the holes penetrate both end faces of the rotor core. 12. A refrigeration cycle apparatus comprising the compressor according to claim 7. 13. A refrigeration cycle apparatus comprising the compressor according to claim 8. | A compressor includes: a stator core including a plurality of teeth around which an aluminum winding wire is wound in a concentrated manner; a rotor core disposed on an inner diameter side of the stator core and including a plurality of magnet insertion holes; and a plurality of ferrite magnets inserted in the magnet insertion holes, in which when a width of a winding wire portion formed in each of the teeth is represented as A, a length in an axis direction of the stator core is represented as L, and the number of slots is represented as S, the stator core has a shape that satisfies a relation of 0.3<S×A÷L<2.2.1-6. (canceled) 7. A motor of a compressor comprising:
a stator core including a plurality of teeth and a plurality of slots formed between the teeth, an aluminum winding wire being wound around the teeth in a concentrated manner; a rotor core disposed on an inner diameter side of the stator core and including a plurality of magnet insertion holes; and a plurality of ferrite magnets inserted into the magnet insertion holes, wherein when a width of a winding wire portion formed in each of the teeth is represented as A, a length in an axis direction of the stator core is represented as L, and the number of the slots is represented as S, the stator core has a shape that satisfies a relation of 0.3<S×A÷L<2.2. 8. A motor of a compressor comprising:
a stator core including a plurality of teeth and a plurality of slots formed between the teeth, an aluminum winding wire being wound around the teeth in a concentrated manner; a rotor core disposed on an inner diameter side of the stator core and including a plurality of magnet insertion holes; a plurality of ferrite magnets inserted into the magnet insertion holes; and an oil separator installed on a shaft penetrating an upper surface side of the rotor core and positioned on an upper surface side of the rotor core, wherein when a width of a winding wire portion formed in each of the teeth is represented as A, a length in an axis direction of the stator core is represented as L, and the number of the slots is represented as S, the stator core has a shape that satisfies a relation of 0.3<S×A÷L<2.2, and in the rotor core, holes that are formed between the magnetic insertion holes and a shaft insertion hole and each have an opening to the oil separator side are formed. 9. The motor of a compressor according to claim 7, wherein a material having a lower specific heat than that of the ferrite magnets is used for the rotor core. 10. The motor of a compressor according to claim 8, wherein a material having a lower specific heat than that of the ferrite magnets is used for the rotor core. 11. The motor of a compressor according to claim 8, wherein the holes penetrate both end faces of the rotor core. 12. A refrigeration cycle apparatus comprising the compressor according to claim 7. 13. A refrigeration cycle apparatus comprising the compressor according to claim 8. | 2,800 |
11,613 | 11,613 | 15,395,181 | 2,894 | A method of forming a plurality of semiconductor packages includes providing an array of unsingulated semiconductor packages that are at least partially encapsulated in an encapsulant. The array of unsingulated semiconductor packages may be coupled with a lead frame or a substrate. A first plurality of singulation lines are simultaneously etched in the encapsulant through slits in an etch mask using a plasma etching process and a fixture coupled with the array. A second plurality of parallel singulation lines may also be etched. The first and second pluralities of singulation lines may include substantially straight or arcuate lines. The second plurality of parallel singulation lines may be substantially perpendicular to the first plurality of parallel singulation lines and be formed using the plasma etching process, the fixture, and an etch mask. The formation of singulation lines in the array singulates the array into a plurality of singulated semiconductor packages. | 1. A method of forming a plurality of semiconductor packages, comprising:
providing an array of unsingulated semiconductor packages coupled through an encapsulant; etching a first plurality of singulation lines in the encapsulant using a plasma etching process and an etch mask and a fixture, and; etching a second plurality of singulation lines in the encapsulant using the plasma etching process and an etch mask and the fixture, thereby singulating the array to form a plurality of singulated semiconductor packages. 2. The method of claim 1, wherein the plurality of singulated semiconductor packages comprises leadless semiconductor packages. 3. The method of claim 2, wherein the leadless semiconductor packages comprise one of a quad flat no leads (QFN) package, a dual flat no leads (DFN) package, and a leadless land grid array (LGA) package. 4. The method of claim 1, wherein the plasma etching process comprises etching with an Ar/O2/CF4 plasma. 5. The method of claim 1, wherein the array of unsingulated semiconductor packages are coupled with one of a lead frame and a substrate. 6. A method of forming a plurality of semiconductor packages, comprising:
providing an array of unsingulated semiconductor packages coupled with one of a lead frame and a substrate and at least partially encapsulated in an encapsulant; coating an etch mask on the array, the etch mask having a plurality of slits therein, and; plasma etching a plurality of singulation lines in the array through the plurality of slits, thereby singulating the array to form a plurality of singulated semiconductor packages. 7. The method of claim 6, wherein the plurality of singulated semiconductor packages comprises leadless semiconductor packages. 8. The method of claim 7, wherein the leadless semiconductor packages comprise one of a quad flat no leads (QFN) package, a dual flat no leads (DFN) package, and a leadless land grid array (LLGA) package. 9. The method of claim 6, wherein the plasma etching process comprises etching with an Ar/O2/CF4 plasma. 10. The method of claim 6, wherein the etch mask is coated on the array using one of a spin coating technique and a spray coating technique. 11. The method of claim 6, wherein each slit is substantially comprised of a substantially straight line. 12. The method of claim 6, wherein each slit is substantially comprised of a substantially arcuate line. 13. The method of claim 6, wherein one or more of the singulated semiconductor packages comprises an overall shape of a cylinder. 14. The method of claim 6, wherein one or more of the singulated semiconductor packages comprises an overall shape of a rectangular right cuboid. 15. The method of claim 6, wherein one or more of the singulated semiconductor packages comprises an overall shape of a triangular prism. 16. A method of forming a plurality of semiconductor packages, comprising:
providing an array of unsingulated semiconductor packages in an encapsulant; etching a first plurality of singulation lines in the encapsulant using a plasma etching process and an etch mask and a fixture; etching a second plurality of singulation lines in the encapsulant using the plasma etching process and an etch mask and the fixture; and etching a third plurality of singulation lines in the encapsulant using the plasma etching process and an etch mask and the fixture, thereby singulating the array to form a plurality of singulated semiconductor packages. 17. The method of claim 16, wherein the plurality of singulated semiconductor packages comprises leadless semiconductor packages. 18. The method of claim 17, wherein the leadless semiconductor packages comprise one of a quad flat no leads (QFN) package, a dual flat no leads (DFN) package, and a leadless land grid array (LGA) package. 19. The method of claim 16, wherein the plasma etching process comprises etching with an Ar/O2/CF4 plasma. 20. The method of claim 16, wherein the array of unsingulated semiconductor packages are coupled with one of a lead frame and a substrate. | A method of forming a plurality of semiconductor packages includes providing an array of unsingulated semiconductor packages that are at least partially encapsulated in an encapsulant. The array of unsingulated semiconductor packages may be coupled with a lead frame or a substrate. A first plurality of singulation lines are simultaneously etched in the encapsulant through slits in an etch mask using a plasma etching process and a fixture coupled with the array. A second plurality of parallel singulation lines may also be etched. The first and second pluralities of singulation lines may include substantially straight or arcuate lines. The second plurality of parallel singulation lines may be substantially perpendicular to the first plurality of parallel singulation lines and be formed using the plasma etching process, the fixture, and an etch mask. The formation of singulation lines in the array singulates the array into a plurality of singulated semiconductor packages.1. A method of forming a plurality of semiconductor packages, comprising:
providing an array of unsingulated semiconductor packages coupled through an encapsulant; etching a first plurality of singulation lines in the encapsulant using a plasma etching process and an etch mask and a fixture, and; etching a second plurality of singulation lines in the encapsulant using the plasma etching process and an etch mask and the fixture, thereby singulating the array to form a plurality of singulated semiconductor packages. 2. The method of claim 1, wherein the plurality of singulated semiconductor packages comprises leadless semiconductor packages. 3. The method of claim 2, wherein the leadless semiconductor packages comprise one of a quad flat no leads (QFN) package, a dual flat no leads (DFN) package, and a leadless land grid array (LGA) package. 4. The method of claim 1, wherein the plasma etching process comprises etching with an Ar/O2/CF4 plasma. 5. The method of claim 1, wherein the array of unsingulated semiconductor packages are coupled with one of a lead frame and a substrate. 6. A method of forming a plurality of semiconductor packages, comprising:
providing an array of unsingulated semiconductor packages coupled with one of a lead frame and a substrate and at least partially encapsulated in an encapsulant; coating an etch mask on the array, the etch mask having a plurality of slits therein, and; plasma etching a plurality of singulation lines in the array through the plurality of slits, thereby singulating the array to form a plurality of singulated semiconductor packages. 7. The method of claim 6, wherein the plurality of singulated semiconductor packages comprises leadless semiconductor packages. 8. The method of claim 7, wherein the leadless semiconductor packages comprise one of a quad flat no leads (QFN) package, a dual flat no leads (DFN) package, and a leadless land grid array (LLGA) package. 9. The method of claim 6, wherein the plasma etching process comprises etching with an Ar/O2/CF4 plasma. 10. The method of claim 6, wherein the etch mask is coated on the array using one of a spin coating technique and a spray coating technique. 11. The method of claim 6, wherein each slit is substantially comprised of a substantially straight line. 12. The method of claim 6, wherein each slit is substantially comprised of a substantially arcuate line. 13. The method of claim 6, wherein one or more of the singulated semiconductor packages comprises an overall shape of a cylinder. 14. The method of claim 6, wherein one or more of the singulated semiconductor packages comprises an overall shape of a rectangular right cuboid. 15. The method of claim 6, wherein one or more of the singulated semiconductor packages comprises an overall shape of a triangular prism. 16. A method of forming a plurality of semiconductor packages, comprising:
providing an array of unsingulated semiconductor packages in an encapsulant; etching a first plurality of singulation lines in the encapsulant using a plasma etching process and an etch mask and a fixture; etching a second plurality of singulation lines in the encapsulant using the plasma etching process and an etch mask and the fixture; and etching a third plurality of singulation lines in the encapsulant using the plasma etching process and an etch mask and the fixture, thereby singulating the array to form a plurality of singulated semiconductor packages. 17. The method of claim 16, wherein the plurality of singulated semiconductor packages comprises leadless semiconductor packages. 18. The method of claim 17, wherein the leadless semiconductor packages comprise one of a quad flat no leads (QFN) package, a dual flat no leads (DFN) package, and a leadless land grid array (LGA) package. 19. The method of claim 16, wherein the plasma etching process comprises etching with an Ar/O2/CF4 plasma. 20. The method of claim 16, wherein the array of unsingulated semiconductor packages are coupled with one of a lead frame and a substrate. | 2,800 |
11,614 | 11,614 | 15,402,686 | 2,855 | A hoist system includes a load attaching member a single conductor connecting the load attaching member to a hoist for raising and lowering the load attaching member and single conductor. A sensor is operatively connected to the load attaching member to sense a monitored parameter of the load attaching member. The sensor is electrically connected to a receiving module of the hoist for single wired-transmission along the single conductor from the sensor to the receiving module. | 1. A hoist system comprising:
a load attaching member; a single conductor connecting the load attaching member to a hoist for raising and lowering the load attaching member and the single conductor; and a sensor operatively connected to the load attaching member to sense a monitored parameter of the load attaching member, wherein the sensor is electrically connected to a receiving module of the hoist for single wired-transmission along the single conductor from the sensor to the receiving module. 2. The hoist system as recited in claim 1, wherein all power and/or data transmission between the sensor and the receiving module is conducted along the single conductor. 3. The hoist system as recited in claim 1, wherein the single conductor is connected as a monopole between the sensor and the receiving module without a second conductor completing a closed circuit between the sensor and the receiving module. 4. The hoist system as recited in claim 1, wherein the single conductor forms an open circuit between the sensor and the receiving module. 5. The hoist system as recited in claim 1, wherein the sensor is configured to:
generate sensor data for the monitored parameter; transform the sensor data into a wave of time-variant electrical charge densities; and transmit the wave of time variant electrical charge densities along the single conductor. 6. The hoist system as recited in claim 5, wherein the receiving module is configured to:
receive the wave of time variant electrical charge densities from the single conductor; and extract the sensor data from the wave of time variant electrical charge densities. 7. The hoist system as recited in claim 1, wherein the sensor is configured for monitoring the monitored parameter optically. 8. The hoist system as recited in claim 1, wherein the sensor is configured for monitoring the monitored parameter electrically. 9. The hoist system as recited in claim 1, wherein the sensor is configured for monitoring one or more loads on the load attaching member as the monitored parameter. 10. The hoist system as recited in claim 9, wherein the sensor includes a stress sensing element for sensing loads locally at the load attaching member. 11. The hoist system as recited in claim 10, further comprising a second stress sensing element at a receiving module end of the single conductor opposite the load attaching member for sensing loads on the single conductor proximate the hoist. 12. The hoist system as recited in claim 1, wherein the sensor is configured to generate analog sensor data. 13. The hoist system as recited in claim 1, wherein the sensor is configured to generate digital sensor data. 14. The hoist system as recited in claim 1, wherein the hoist is configured to be mounted to at least one of an aircraft, a crane, a winch, an elevator, or a suspension structure. 15. The hoist system as recited in claim 1, wherein the receiving module is configured for health monitoring the load attaching member, single conductor, and hoist based on sensor data from the sensor. 16. An aircraft including:
an airframe; and a hoist system including:
a load attaching member;
a single conductor connecting the load attaching member to a hoist for raising and lowering the load attaching member and the single conductor; and
a sensor operatively connected to the load attaching member to sense a monitored parameter of the load attaching member, wherein the sensor is electrically connected to a receiving module of the hoist for single wired-transmission along the single conductor from the sensor to the receiving module. 17. A method comprising:
transmitting data from a sensor configured to monitor at least one parameter of a hoist system along a cable having only a single conductor. | A hoist system includes a load attaching member a single conductor connecting the load attaching member to a hoist for raising and lowering the load attaching member and single conductor. A sensor is operatively connected to the load attaching member to sense a monitored parameter of the load attaching member. The sensor is electrically connected to a receiving module of the hoist for single wired-transmission along the single conductor from the sensor to the receiving module.1. A hoist system comprising:
a load attaching member; a single conductor connecting the load attaching member to a hoist for raising and lowering the load attaching member and the single conductor; and a sensor operatively connected to the load attaching member to sense a monitored parameter of the load attaching member, wherein the sensor is electrically connected to a receiving module of the hoist for single wired-transmission along the single conductor from the sensor to the receiving module. 2. The hoist system as recited in claim 1, wherein all power and/or data transmission between the sensor and the receiving module is conducted along the single conductor. 3. The hoist system as recited in claim 1, wherein the single conductor is connected as a monopole between the sensor and the receiving module without a second conductor completing a closed circuit between the sensor and the receiving module. 4. The hoist system as recited in claim 1, wherein the single conductor forms an open circuit between the sensor and the receiving module. 5. The hoist system as recited in claim 1, wherein the sensor is configured to:
generate sensor data for the monitored parameter; transform the sensor data into a wave of time-variant electrical charge densities; and transmit the wave of time variant electrical charge densities along the single conductor. 6. The hoist system as recited in claim 5, wherein the receiving module is configured to:
receive the wave of time variant electrical charge densities from the single conductor; and extract the sensor data from the wave of time variant electrical charge densities. 7. The hoist system as recited in claim 1, wherein the sensor is configured for monitoring the monitored parameter optically. 8. The hoist system as recited in claim 1, wherein the sensor is configured for monitoring the monitored parameter electrically. 9. The hoist system as recited in claim 1, wherein the sensor is configured for monitoring one or more loads on the load attaching member as the monitored parameter. 10. The hoist system as recited in claim 9, wherein the sensor includes a stress sensing element for sensing loads locally at the load attaching member. 11. The hoist system as recited in claim 10, further comprising a second stress sensing element at a receiving module end of the single conductor opposite the load attaching member for sensing loads on the single conductor proximate the hoist. 12. The hoist system as recited in claim 1, wherein the sensor is configured to generate analog sensor data. 13. The hoist system as recited in claim 1, wherein the sensor is configured to generate digital sensor data. 14. The hoist system as recited in claim 1, wherein the hoist is configured to be mounted to at least one of an aircraft, a crane, a winch, an elevator, or a suspension structure. 15. The hoist system as recited in claim 1, wherein the receiving module is configured for health monitoring the load attaching member, single conductor, and hoist based on sensor data from the sensor. 16. An aircraft including:
an airframe; and a hoist system including:
a load attaching member;
a single conductor connecting the load attaching member to a hoist for raising and lowering the load attaching member and the single conductor; and
a sensor operatively connected to the load attaching member to sense a monitored parameter of the load attaching member, wherein the sensor is electrically connected to a receiving module of the hoist for single wired-transmission along the single conductor from the sensor to the receiving module. 17. A method comprising:
transmitting data from a sensor configured to monitor at least one parameter of a hoist system along a cable having only a single conductor. | 2,800 |
11,615 | 11,615 | 14,007,231 | 2,846 | A converter assembly, a method for producing a converter assembly and a method for operating a converter assembly are described, in which a base module includes power electronics and control electronics. The base module includes a housing, particularly a housing part at least partially forming a housing for the power electronics and control electronics. The base module includes an electrical and mechanical interface, via which signal electronics are able to be joined to the base module with form-locking and/or force-locking, in order to form the converter assembly. The signal electronics include a housing, especially so that after being joined, the housing of the signal electronics and the housing of the base module together form a housing of the converter assembly. A setpoint value for speed and/or torque is transmittable electrically via the interface, the signal electronics having means for receiving, determining and/or inputting the setpoint value. | 1-13. (canceled) 14. A converter assembly, comprising:
a base module including power electronics and control electronics, the base module having a housing or a housing part completely or at least partially forming a housing for the power electronics and control electronics, wherein the base module includes an electrical and mechanical interface, via which signal electronics are joinable to the base module with form-locking and/or force-locking, in order to form the converter assembly, wherein the signal electronics includes a housing such that after being joined, the housing of the signal electronics and the housing of the base module together form a housing of the converter assembly, wherein a setpoint value for speed and/or torque is transmittable electrically via the interface, the signal electronics having means for receiving, determining and/or inputting the setpoint value. 15. The converter assembly according to claim 14, wherein the signal electronics includes an automatic control unit which, based on a deviation between a setpoint value of a variable of a position, and an actual value, determines a manipulated value which is transmitted as the setpoint value for speed and/or torque via the interface to the control electronics, and/or
wherein the signal electronics includes a positioning control which determines an instantaneous manipulated value as controlled variable that is transmitted as the setpoint value for speed and/or torque via the interface to the control electronics. 16. The converter assembly according to claim 14, wherein the control electronics includes an automatic control unit which, based on a deviation between the setpoint value supplied by the signal electronics and the actual value, determines a manipulated value for motor voltage and generates corresponding pulse-width-modulated driving signals for power semiconductors of the power electronics which are controllable accordingly to generate the motor voltage to be regulated. 17. The converter assembly according to claim 14, wherein the base module and/or the control electronics includes a speed controller and/or a torque controller, and
wherein the signal electronics includes a position controller, whose output is the setpoint value for speed and/or torque which is transmitted and predefined via the mechanical interface to the corresponding speed controller and/or torque controller in the base module and/or the control electronics. 18. The converter assembly according to claim 15, wherein the automatic control unit includes a linear controller, or a PI controller with or without pre-control. 19. The converter assembly according to claim 14, wherein the signal electronics includes means for inputting and/or displaying parameters, a touch screen, and/or connection terminals for electric lines, signal lines or power cable lines. 20. The converter assembly according to claim 14, wherein the signal electronics includes a field-bus interface. 21. The converter assembly according to claim 14, wherein the electrical and mechanical interface is implemented as a plug-in connection, the base module including a connector part and the signal electronics including a corresponding mating-connector part. 22. The converter assembly according to claim 14, wherein the housing of the signal electronics is joinable imperviously to the housing of the base module, a seal being disposed between the housing of the signal electronics and the housing of the base module, such that the electrical and mechanical interface is disposed in a spatial area surrounded and sealed off by the housings, or is surrounded by the housings in housing-forming fashion. 23. A method for producing a converter assembly, comprising:
providing a modular system including base modules differing from each other and signal-electronics modules differing from each other, each base module being connectable electrically and mechanically to each signal-electronics module via an electrical and mechanical interface, various power-electronics modules being provided for producing the base modules, the interface being provided between the power-electronics modules and the signal-electronics modules, and assembling variants of the converter assembly having different functionality from the base modules and the signal-electronics modules, depending on requirements of an application. 24. A method for operating a converter assembly, comprising:
supplying a setpoint value for torque and/or speed by signal electronics to control electronics via an interface, supplying an acquired value for motor current and/or angular value of a rotor shaft to the control electronics, determining an actual value for torque and/or speed which is adjusted by an automatic control unit of the control electronics to a setpoint value by determining a motor voltage as manipulated value, or by determining corresponding pulse-width-modulated driving signals that are supplied to power semiconductor switches, determining the setpoint value for torque and/or speed by an automatic control unit of the signal electronics as manipulated value of a controlled variable of the automatic control unit of the signal electronics, supplying the setpoint value and an actual value of a variable of a position of a part driven by a motor energized by the converter assembly to the signal electronics, and determining a deviation between the setpoint value and the actual value, and determining the manipulated value by the automatic control unit of the signal electronics. 25. The method according to claim 24, wherein each automatic control unit includes a linear controller, P controller, PI controller or PID controller, with or without pre-control. 26. A torque and/or speed interface between signal electronics and control electronics, each of the signal electronics and the control electronics including a computer, microcontroller or microprocessor, the control electronics forming a base module with power electronics, the computers, microcontrollers or microprocessors acting as controller units, and the controller unit of the control electronics acting as torque and/or speed controller, and the controller unit of the signal electronics acting as superordinate controller, the torque and/or speed interface comprising:
an interface via which the superordinate controller makes a setpoint input available as controlled variable to the controller unit of the control electronics. | A converter assembly, a method for producing a converter assembly and a method for operating a converter assembly are described, in which a base module includes power electronics and control electronics. The base module includes a housing, particularly a housing part at least partially forming a housing for the power electronics and control electronics. The base module includes an electrical and mechanical interface, via which signal electronics are able to be joined to the base module with form-locking and/or force-locking, in order to form the converter assembly. The signal electronics include a housing, especially so that after being joined, the housing of the signal electronics and the housing of the base module together form a housing of the converter assembly. A setpoint value for speed and/or torque is transmittable electrically via the interface, the signal electronics having means for receiving, determining and/or inputting the setpoint value.1-13. (canceled) 14. A converter assembly, comprising:
a base module including power electronics and control electronics, the base module having a housing or a housing part completely or at least partially forming a housing for the power electronics and control electronics, wherein the base module includes an electrical and mechanical interface, via which signal electronics are joinable to the base module with form-locking and/or force-locking, in order to form the converter assembly, wherein the signal electronics includes a housing such that after being joined, the housing of the signal electronics and the housing of the base module together form a housing of the converter assembly, wherein a setpoint value for speed and/or torque is transmittable electrically via the interface, the signal electronics having means for receiving, determining and/or inputting the setpoint value. 15. The converter assembly according to claim 14, wherein the signal electronics includes an automatic control unit which, based on a deviation between a setpoint value of a variable of a position, and an actual value, determines a manipulated value which is transmitted as the setpoint value for speed and/or torque via the interface to the control electronics, and/or
wherein the signal electronics includes a positioning control which determines an instantaneous manipulated value as controlled variable that is transmitted as the setpoint value for speed and/or torque via the interface to the control electronics. 16. The converter assembly according to claim 14, wherein the control electronics includes an automatic control unit which, based on a deviation between the setpoint value supplied by the signal electronics and the actual value, determines a manipulated value for motor voltage and generates corresponding pulse-width-modulated driving signals for power semiconductors of the power electronics which are controllable accordingly to generate the motor voltage to be regulated. 17. The converter assembly according to claim 14, wherein the base module and/or the control electronics includes a speed controller and/or a torque controller, and
wherein the signal electronics includes a position controller, whose output is the setpoint value for speed and/or torque which is transmitted and predefined via the mechanical interface to the corresponding speed controller and/or torque controller in the base module and/or the control electronics. 18. The converter assembly according to claim 15, wherein the automatic control unit includes a linear controller, or a PI controller with or without pre-control. 19. The converter assembly according to claim 14, wherein the signal electronics includes means for inputting and/or displaying parameters, a touch screen, and/or connection terminals for electric lines, signal lines or power cable lines. 20. The converter assembly according to claim 14, wherein the signal electronics includes a field-bus interface. 21. The converter assembly according to claim 14, wherein the electrical and mechanical interface is implemented as a plug-in connection, the base module including a connector part and the signal electronics including a corresponding mating-connector part. 22. The converter assembly according to claim 14, wherein the housing of the signal electronics is joinable imperviously to the housing of the base module, a seal being disposed between the housing of the signal electronics and the housing of the base module, such that the electrical and mechanical interface is disposed in a spatial area surrounded and sealed off by the housings, or is surrounded by the housings in housing-forming fashion. 23. A method for producing a converter assembly, comprising:
providing a modular system including base modules differing from each other and signal-electronics modules differing from each other, each base module being connectable electrically and mechanically to each signal-electronics module via an electrical and mechanical interface, various power-electronics modules being provided for producing the base modules, the interface being provided between the power-electronics modules and the signal-electronics modules, and assembling variants of the converter assembly having different functionality from the base modules and the signal-electronics modules, depending on requirements of an application. 24. A method for operating a converter assembly, comprising:
supplying a setpoint value for torque and/or speed by signal electronics to control electronics via an interface, supplying an acquired value for motor current and/or angular value of a rotor shaft to the control electronics, determining an actual value for torque and/or speed which is adjusted by an automatic control unit of the control electronics to a setpoint value by determining a motor voltage as manipulated value, or by determining corresponding pulse-width-modulated driving signals that are supplied to power semiconductor switches, determining the setpoint value for torque and/or speed by an automatic control unit of the signal electronics as manipulated value of a controlled variable of the automatic control unit of the signal electronics, supplying the setpoint value and an actual value of a variable of a position of a part driven by a motor energized by the converter assembly to the signal electronics, and determining a deviation between the setpoint value and the actual value, and determining the manipulated value by the automatic control unit of the signal electronics. 25. The method according to claim 24, wherein each automatic control unit includes a linear controller, P controller, PI controller or PID controller, with or without pre-control. 26. A torque and/or speed interface between signal electronics and control electronics, each of the signal electronics and the control electronics including a computer, microcontroller or microprocessor, the control electronics forming a base module with power electronics, the computers, microcontrollers or microprocessors acting as controller units, and the controller unit of the control electronics acting as torque and/or speed controller, and the controller unit of the signal electronics acting as superordinate controller, the torque and/or speed interface comprising:
an interface via which the superordinate controller makes a setpoint input available as controlled variable to the controller unit of the control electronics. | 2,800 |
11,616 | 11,616 | 15,364,408 | 2,837 | A solenoid apparatus is combined with a printed circuit board to form an improved combination of structures. The solenoid apparatus includes a solenoid that is situated on a frame that is formed from an electrically nonconductive material. In another embodiment, a frame of a solenoid apparatus is modified to remove a dependent structure in order to avoid a frame from being soldered together with an electrical connector of a solenoid. In a third embodiment, a solenoid apparatus includes a frame having a protuberance that is situated at a location spaced equally from each of a pair of electrical connectors of the coil. In a fourth embodiment, a solenoid apparatus includes a frame with a protruding structure, but the protruding structure is spaced from a circuit board and thus does not become electrically connected therewith. A method is also disclosed. | 1. A combination comprising:
a solenoid apparatus comprising a solenoid and a frame, the frame comprising a main portion and a lug, the solenoid comprising a coil situated on the frame and a pair of electrical connectors that are electrically connected with the coil, the pair of electrical connectors being situated adjacent the frame and protruding beyond an edge of the main portion, the lug protruding from the edge and being situated adjacent but spaced apart from an electrical conductor of the pair of electrical conductors; and a printed circuit board having a number of conductive elements, the pair of electrical connectors being electrically connected with at least a portion of the number of conductive elements, the frame being electrically disconnected from the number of conductive elements, the lug being affixed to the printed circuit board with an adhesive or other material and being electrically disconnected from the electrical conductor and the printed circuit board. 2. The combination of claim 1 wherein the frame is formed of a material that is electrically conductive, and wherein the edge of the frame is free of protuberant structures adjacent the pair of electrical connectors. 3. The combination of claim 1 wherein the frame is formed of a material that is electrically insulative. 4. The combination of claim 1 wherein the frame includes a protuberance situated on the edge and spaced substantially equally from each of the electrical connectors of the pair of electrical connectors. 5. The combination of claim 1 wherein the frame includes a protruding structure situated on the edge, with the edge and the protruding structure being spaced from the printed circuit board when the pair of electrical connectors are electrically connected with the at least portion of the number of conductive elements. 6. A method of avoiding a frame of a solenoid apparatus from becoming electrically connected with a printed circuit board having a number of conductive elements, the solenoid apparatus comprising a solenoid and a frame, the solenoid comprising a coil situated on the frame and a pair of electrical connectors that are electrically connected with the coil, the pair of electrical connectors being situated adjacent the frame and protruding beyond an edge of the frame, the pair of electrical connectors being electrically connected with at least a portion of the number of conductive elements, the method comprising:
performing at least one of:
prior to electrically connecting the pair of electrical connectors with the at least portion of the number of conductive elements, removing from the edge a protuberant structure that is situated adjacent an electrical connector of the pair of electrical connectors,
providing the frame with a protuberance situated on the edge and spaced substantially equally from each of the electrical connectors of the pair of electrical connectors,
forming the frame out of an electrically insulative material, and
configuring the frame to have a protruding structure situated on the edge, with the edge and the protruding structure being spaced from the printed circuit board when the pair of electrical connectors are electrically connected with the at least portion of the number of conductive elements. | A solenoid apparatus is combined with a printed circuit board to form an improved combination of structures. The solenoid apparatus includes a solenoid that is situated on a frame that is formed from an electrically nonconductive material. In another embodiment, a frame of a solenoid apparatus is modified to remove a dependent structure in order to avoid a frame from being soldered together with an electrical connector of a solenoid. In a third embodiment, a solenoid apparatus includes a frame having a protuberance that is situated at a location spaced equally from each of a pair of electrical connectors of the coil. In a fourth embodiment, a solenoid apparatus includes a frame with a protruding structure, but the protruding structure is spaced from a circuit board and thus does not become electrically connected therewith. A method is also disclosed.1. A combination comprising:
a solenoid apparatus comprising a solenoid and a frame, the frame comprising a main portion and a lug, the solenoid comprising a coil situated on the frame and a pair of electrical connectors that are electrically connected with the coil, the pair of electrical connectors being situated adjacent the frame and protruding beyond an edge of the main portion, the lug protruding from the edge and being situated adjacent but spaced apart from an electrical conductor of the pair of electrical conductors; and a printed circuit board having a number of conductive elements, the pair of electrical connectors being electrically connected with at least a portion of the number of conductive elements, the frame being electrically disconnected from the number of conductive elements, the lug being affixed to the printed circuit board with an adhesive or other material and being electrically disconnected from the electrical conductor and the printed circuit board. 2. The combination of claim 1 wherein the frame is formed of a material that is electrically conductive, and wherein the edge of the frame is free of protuberant structures adjacent the pair of electrical connectors. 3. The combination of claim 1 wherein the frame is formed of a material that is electrically insulative. 4. The combination of claim 1 wherein the frame includes a protuberance situated on the edge and spaced substantially equally from each of the electrical connectors of the pair of electrical connectors. 5. The combination of claim 1 wherein the frame includes a protruding structure situated on the edge, with the edge and the protruding structure being spaced from the printed circuit board when the pair of electrical connectors are electrically connected with the at least portion of the number of conductive elements. 6. A method of avoiding a frame of a solenoid apparatus from becoming electrically connected with a printed circuit board having a number of conductive elements, the solenoid apparatus comprising a solenoid and a frame, the solenoid comprising a coil situated on the frame and a pair of electrical connectors that are electrically connected with the coil, the pair of electrical connectors being situated adjacent the frame and protruding beyond an edge of the frame, the pair of electrical connectors being electrically connected with at least a portion of the number of conductive elements, the method comprising:
performing at least one of:
prior to electrically connecting the pair of electrical connectors with the at least portion of the number of conductive elements, removing from the edge a protuberant structure that is situated adjacent an electrical connector of the pair of electrical connectors,
providing the frame with a protuberance situated on the edge and spaced substantially equally from each of the electrical connectors of the pair of electrical connectors,
forming the frame out of an electrically insulative material, and
configuring the frame to have a protruding structure situated on the edge, with the edge and the protruding structure being spaced from the printed circuit board when the pair of electrical connectors are electrically connected with the at least portion of the number of conductive elements. | 2,800 |
11,617 | 11,617 | 15,088,637 | 2,853 | Traditional flow sensors include an upstream resistive sensor element, a downstream resistive sensor element and an intervening heater resistive element. To help reduce the size and/or cost of such flow sensor, it is contemplated that the heater resistor may be eliminated. When so provided, the space required for the heater resistive element, as well as the corresponding heater control circuit, may be eliminated. This can reduce the cost, size and complexity of the flow sensor. Coupling a resistive sensor element of such flow sensor to ground through a low temperature coefficient of resistance (TCR) resistor can reduce the variation of span of an output of the flow sensor which can improve resolution and accuracy of such sensor. | 1. A flow sensor for sensing a fluid flow rate through a flow channel, the flow sensor comprising:
an upstream resistive element having a first resistance that changes with temperature and having a first temperature coefficient of resistance (TCR); a downstream resistive element having a second resistance that changes with temperature and having a second TCR, wherein the downstream resistive element is situated downstream of the upstream resistive element in the flow channel and wherein the first TCR and the second TCR are substantially the same; the upstream resistive element and the downstream resistive element are operatively connected in a bridge circuit, wherein the bridge circuit is configured to supply a current to each of the upstream resistive element and the downstream resistive element, wherein the current causes resistive heating in both the upstream resistive element and the downstream resistive element such that both the upstream resistive element and the downstream resistive element are heated above the ambient temperature of the fluid flowing through the flow channel, wherein the fluid flow through the flow channel causing the temperature of the upstream resistive element to be lower than the temperature of the downstream resistive element, wherein a difference in temperature between the upstream resistive element and the downstream resistive element causes an imbalance in the bridge circuit that is related to the fluid flow rate of the fluid flowing though the flow channel; and a low TCR resistor having a third TCR that is at least an order of magnitude lower than the first TCR and at least an order of magnitude lower than the second TCR. 2. The flow sensor of claim 1, wherein the first resistance is substantially the same as the second resistance when the fluid flow rate is at zero. 3. The flow sensor of claim 1, wherein the upstream resistive element and the downstream resistive element are formed from a common set of one or more layers and the low TCR resistor is formed from a different set of one or more layers than the common set of one or more layers in which the upstream resistive element and the downstream resistive element are formed from. 4. The flow sensor of claim 1, wherein the third TCR is less than about 0.0003/° C. 5. The flow sensor of claim 1, wherein the third TCR is less than about 0.0001/° C. 6. The flow sensor of claim 1, wherein the variation in span of the output of the bridge circuit from −20° C. operating temperature to 70° C. operating temperature is less than 1.4:1. 7. A flow sensor device comprising:
a substrate; a membrane suspended by the substrate; an upstream resistive element situated on the membrane having a first temperature coefficient of resistance (TCR); a downstream resistive element situated on the membrane adjacent the upstream resistive element having a second TCR, wherein the first TCR and the second TCR are substantially the same, with no intervening heater element positioned between the upstream resistive element and the downstream resistive element; a first upstream node coupled to a first end of the upstream resistive element and a second upstream node coupled to a second end of the upstream resistive element; a first downstream node coupled to a first end of the downstream resistive element and a second downstream node coupled to a second end of the downstream resistive element; and a low TCR resistor coupled to one of the upstream resistive element and the downstream resistive element having a third TCR where the third TCR is at least an order of magnitude less than the first TCR and is at least an order of magnitude less than the second TCR; wherein the upstream resistive element has an electrical resistance between the first upstream node and the second upstream node and the downstream resistive element has an electrical resistance between the first downstream node and the second downstream node; and wherein the resistance of the upstream resistive element is within 20 percent or less of the resistance of the downstream resistive element when the upstream resistive element is at the same temperature as the downstream resistive element. 8. The flow sensor device of claim 7, wherein the resistance of the upstream resistive element is within 10 percent or less of the resistance of the downstream resistive element when the upstream resistive element is at the same temperature as the downstream resistive element. 9. The flow sensor device of claim 7, wherein the resistance of the upstream resistive element is within 1 percent or less of the resistance of the downstream resistive element when the upstream resistive element is at the same temperature as the downstream resistive element. 10. The flow sensor device of claim 7, wherein the low TCR resistor couples the substrate to ground. 11. The flow sensor device of claim 7, wherein the low TCR resistor has a TCR of 0.0003/° C. or less. 12. A micromechanicalelectrical system (MEMS) flow sensor die comprising:
a substrate, wherein the substrate is 1 square millimeter or less in planar area; a membrane suspended by the substrate; an upstream resistive element situated on the membrane; a downstream resistive element situated on the membrane adjacent the upstream resistive element, with no intervening heater element positioned between the upstream resistive element and the downstream resistive element. 13. The flow sensor die of claim 12, further comprising:
a slit formed through the membrane between the upstream resistive element and the downstream resistive element. 14. The flow sensor die of claim 12, wherein the upstream resistive element and the downstream resistive element have a resistance in the range of 300-900 ohms. 15. The flow sensor die of claim 12, wherein the upstream resistive element and the downstream resistive element are connected in a Wheatstone bridge configuration. 16. The flow sensor die of claim 15, wherein the upstream resistive element and the downstream resistive element have substantially the same temperature coefficient of resistance (TCR), further comprising a low TCR resistor that connects to one end of the Wheatstone bridge configuration, wherein the low TCR resistor has a TCR that is an order of magnitude less than the TCR of the upstream resistive element and the downstream resistive element. 17. The flow sensor die of claim 16, wherein the low TCR resistor has a TCR that is less than about 0.0003/° C. 18. The flow sensor die of claim 17, wherein the TCR of the upstream resistive element and the downstream resistive element is at least about 0.003/° C. 19. The flow sensor die of claim 16, the low TCR resistor comprises a material that is different from the material the upstream resistive element and the downstream resistive element are comprised of. 20. The flow sensor die of claim 16, wherein the variation in span of the output of the Wheatstone bridge configuration from −20° C. operating temperature to 70° C. operating temperature is less than 1.4:1. | Traditional flow sensors include an upstream resistive sensor element, a downstream resistive sensor element and an intervening heater resistive element. To help reduce the size and/or cost of such flow sensor, it is contemplated that the heater resistor may be eliminated. When so provided, the space required for the heater resistive element, as well as the corresponding heater control circuit, may be eliminated. This can reduce the cost, size and complexity of the flow sensor. Coupling a resistive sensor element of such flow sensor to ground through a low temperature coefficient of resistance (TCR) resistor can reduce the variation of span of an output of the flow sensor which can improve resolution and accuracy of such sensor.1. A flow sensor for sensing a fluid flow rate through a flow channel, the flow sensor comprising:
an upstream resistive element having a first resistance that changes with temperature and having a first temperature coefficient of resistance (TCR); a downstream resistive element having a second resistance that changes with temperature and having a second TCR, wherein the downstream resistive element is situated downstream of the upstream resistive element in the flow channel and wherein the first TCR and the second TCR are substantially the same; the upstream resistive element and the downstream resistive element are operatively connected in a bridge circuit, wherein the bridge circuit is configured to supply a current to each of the upstream resistive element and the downstream resistive element, wherein the current causes resistive heating in both the upstream resistive element and the downstream resistive element such that both the upstream resistive element and the downstream resistive element are heated above the ambient temperature of the fluid flowing through the flow channel, wherein the fluid flow through the flow channel causing the temperature of the upstream resistive element to be lower than the temperature of the downstream resistive element, wherein a difference in temperature between the upstream resistive element and the downstream resistive element causes an imbalance in the bridge circuit that is related to the fluid flow rate of the fluid flowing though the flow channel; and a low TCR resistor having a third TCR that is at least an order of magnitude lower than the first TCR and at least an order of magnitude lower than the second TCR. 2. The flow sensor of claim 1, wherein the first resistance is substantially the same as the second resistance when the fluid flow rate is at zero. 3. The flow sensor of claim 1, wherein the upstream resistive element and the downstream resistive element are formed from a common set of one or more layers and the low TCR resistor is formed from a different set of one or more layers than the common set of one or more layers in which the upstream resistive element and the downstream resistive element are formed from. 4. The flow sensor of claim 1, wherein the third TCR is less than about 0.0003/° C. 5. The flow sensor of claim 1, wherein the third TCR is less than about 0.0001/° C. 6. The flow sensor of claim 1, wherein the variation in span of the output of the bridge circuit from −20° C. operating temperature to 70° C. operating temperature is less than 1.4:1. 7. A flow sensor device comprising:
a substrate; a membrane suspended by the substrate; an upstream resistive element situated on the membrane having a first temperature coefficient of resistance (TCR); a downstream resistive element situated on the membrane adjacent the upstream resistive element having a second TCR, wherein the first TCR and the second TCR are substantially the same, with no intervening heater element positioned between the upstream resistive element and the downstream resistive element; a first upstream node coupled to a first end of the upstream resistive element and a second upstream node coupled to a second end of the upstream resistive element; a first downstream node coupled to a first end of the downstream resistive element and a second downstream node coupled to a second end of the downstream resistive element; and a low TCR resistor coupled to one of the upstream resistive element and the downstream resistive element having a third TCR where the third TCR is at least an order of magnitude less than the first TCR and is at least an order of magnitude less than the second TCR; wherein the upstream resistive element has an electrical resistance between the first upstream node and the second upstream node and the downstream resistive element has an electrical resistance between the first downstream node and the second downstream node; and wherein the resistance of the upstream resistive element is within 20 percent or less of the resistance of the downstream resistive element when the upstream resistive element is at the same temperature as the downstream resistive element. 8. The flow sensor device of claim 7, wherein the resistance of the upstream resistive element is within 10 percent or less of the resistance of the downstream resistive element when the upstream resistive element is at the same temperature as the downstream resistive element. 9. The flow sensor device of claim 7, wherein the resistance of the upstream resistive element is within 1 percent or less of the resistance of the downstream resistive element when the upstream resistive element is at the same temperature as the downstream resistive element. 10. The flow sensor device of claim 7, wherein the low TCR resistor couples the substrate to ground. 11. The flow sensor device of claim 7, wherein the low TCR resistor has a TCR of 0.0003/° C. or less. 12. A micromechanicalelectrical system (MEMS) flow sensor die comprising:
a substrate, wherein the substrate is 1 square millimeter or less in planar area; a membrane suspended by the substrate; an upstream resistive element situated on the membrane; a downstream resistive element situated on the membrane adjacent the upstream resistive element, with no intervening heater element positioned between the upstream resistive element and the downstream resistive element. 13. The flow sensor die of claim 12, further comprising:
a slit formed through the membrane between the upstream resistive element and the downstream resistive element. 14. The flow sensor die of claim 12, wherein the upstream resistive element and the downstream resistive element have a resistance in the range of 300-900 ohms. 15. The flow sensor die of claim 12, wherein the upstream resistive element and the downstream resistive element are connected in a Wheatstone bridge configuration. 16. The flow sensor die of claim 15, wherein the upstream resistive element and the downstream resistive element have substantially the same temperature coefficient of resistance (TCR), further comprising a low TCR resistor that connects to one end of the Wheatstone bridge configuration, wherein the low TCR resistor has a TCR that is an order of magnitude less than the TCR of the upstream resistive element and the downstream resistive element. 17. The flow sensor die of claim 16, wherein the low TCR resistor has a TCR that is less than about 0.0003/° C. 18. The flow sensor die of claim 17, wherein the TCR of the upstream resistive element and the downstream resistive element is at least about 0.003/° C. 19. The flow sensor die of claim 16, the low TCR resistor comprises a material that is different from the material the upstream resistive element and the downstream resistive element are comprised of. 20. The flow sensor die of claim 16, wherein the variation in span of the output of the Wheatstone bridge configuration from −20° C. operating temperature to 70° C. operating temperature is less than 1.4:1. | 2,800 |
11,618 | 11,618 | 15,632,760 | 2,843 | A piezoelectric film that includes crystalline AlN; at least one first element partially replacing Al in the crystalline AlN; and a second element doping the crystalline AlN and which has an ionic radius smaller than that of the first element and larger than that of Al. | 1. A piezoelectric film comprising:
crystalline AlN; at least one first element partially replacing Al in the crystalline AlN; and a second element doping the crystalline AlN, the second element having an ionic radius smaller than an ionic radius of the first element and larger than an ionic radius of Al. 2. The piezoelectric film according to claim 1, wherein the at least one first element comprises a Group 3 element, Group 2 and 4 elements, Group 2 and 5 elements, Group 12 and 4 elements, or Group 12 and 5 elements. 3. The piezoelectric film according to claim 1, wherein the first element is Sc. 4. The piezoelectric film according to claim 3, wherein a ratio of a number of Sc atoms to a total number of Al and Sc atoms is 0.03 to 0.50 in the piezoelectric film. 5. The piezoelectric film according to claim 1, wherein the second element is a trivalent cation. 6. The piezoelectric film according to claim 1, wherein the second element is at least one element selected from W, Zr, Fe, Ta, Cr, Ti, and Ni. 7. The piezoelectric film according to claim 2, wherein the second element is at least one element selected from W, Zr, Fe, Ta, Cr, Ti, and Ni. 8. The piezoelectric film according to claim 3, wherein the second element is at least one element selected from W, Zr, Fe, Ta, Cr, Ti, and Ni. 9. The piezoelectric film according to claim 4, wherein the second element is at least one element selected from W, Zr, Fe, Ta, Cr, Ti, and Ni. 10. The piezoelectric film according to claim 1, wherein a percentage ratio of a number of atoms of the second element to a total number of Al atoms and atoms of the first element is 0.01 at % to 1.00 at %. 11. A piezoelectric vibrator comprising:
a first electrode; a second electrode; a piezoelectric film between the first and second electrodes, the piezoelectric film comprising: crystalline AlN; at least one first element partially replacing Al in the crystalline AlN; and a second element doping the crystalline AlN, the second element having an ionic radius smaller than an ionic radius of the first element and larger than an ionic radius of Al. 12. The piezoelectric vibrator according to claim 11, wherein the at least one first element comprises a Group 3 element, Group 2 and 4 elements, Group 2 and 5 elements, Group 12 and 4 elements, or Group 12 and 5 elements. 13. The piezoelectric vibrator according to claim 11, wherein the first element is Sc. 14. The piezoelectric vibrator according to claim 13, wherein a ratio of a number of Sc atoms to a total number of Al and Sc atoms is 0.03 to 0.50 in the piezoelectric film. 15. The piezoelectric vibrator according to claim 11, wherein the second element is a trivalent cation. 16. The piezoelectric vibrator according to claim 11, wherein the second element is at least one element selected from W, Zr, Fe, Ta, Cr, Ti, and Ni. 17. The piezoelectric vibrator according to claim 12, wherein the second element is at least one element selected from W, Zr, Fe, Ta, Cr, Ti, and Ni. 18. The piezoelectric vibrator according to claim 13, wherein the second element is at least one element selected from W, Zr, Fe, Ta, Cr, Ti, and Ni. 19. The piezoelectric vibrator according to claim 14, wherein the second element is at least one element selected from W, Zr, Fe, Ta, Cr, Ti, and Ni. 20. The piezoelectric vibrator according to claim 11, wherein a percentage ratio of a number of atoms of the second element to a total number of Al atoms and atoms of the first element is 0.01 at % to 1.00 at %. | A piezoelectric film that includes crystalline AlN; at least one first element partially replacing Al in the crystalline AlN; and a second element doping the crystalline AlN and which has an ionic radius smaller than that of the first element and larger than that of Al.1. A piezoelectric film comprising:
crystalline AlN; at least one first element partially replacing Al in the crystalline AlN; and a second element doping the crystalline AlN, the second element having an ionic radius smaller than an ionic radius of the first element and larger than an ionic radius of Al. 2. The piezoelectric film according to claim 1, wherein the at least one first element comprises a Group 3 element, Group 2 and 4 elements, Group 2 and 5 elements, Group 12 and 4 elements, or Group 12 and 5 elements. 3. The piezoelectric film according to claim 1, wherein the first element is Sc. 4. The piezoelectric film according to claim 3, wherein a ratio of a number of Sc atoms to a total number of Al and Sc atoms is 0.03 to 0.50 in the piezoelectric film. 5. The piezoelectric film according to claim 1, wherein the second element is a trivalent cation. 6. The piezoelectric film according to claim 1, wherein the second element is at least one element selected from W, Zr, Fe, Ta, Cr, Ti, and Ni. 7. The piezoelectric film according to claim 2, wherein the second element is at least one element selected from W, Zr, Fe, Ta, Cr, Ti, and Ni. 8. The piezoelectric film according to claim 3, wherein the second element is at least one element selected from W, Zr, Fe, Ta, Cr, Ti, and Ni. 9. The piezoelectric film according to claim 4, wherein the second element is at least one element selected from W, Zr, Fe, Ta, Cr, Ti, and Ni. 10. The piezoelectric film according to claim 1, wherein a percentage ratio of a number of atoms of the second element to a total number of Al atoms and atoms of the first element is 0.01 at % to 1.00 at %. 11. A piezoelectric vibrator comprising:
a first electrode; a second electrode; a piezoelectric film between the first and second electrodes, the piezoelectric film comprising: crystalline AlN; at least one first element partially replacing Al in the crystalline AlN; and a second element doping the crystalline AlN, the second element having an ionic radius smaller than an ionic radius of the first element and larger than an ionic radius of Al. 12. The piezoelectric vibrator according to claim 11, wherein the at least one first element comprises a Group 3 element, Group 2 and 4 elements, Group 2 and 5 elements, Group 12 and 4 elements, or Group 12 and 5 elements. 13. The piezoelectric vibrator according to claim 11, wherein the first element is Sc. 14. The piezoelectric vibrator according to claim 13, wherein a ratio of a number of Sc atoms to a total number of Al and Sc atoms is 0.03 to 0.50 in the piezoelectric film. 15. The piezoelectric vibrator according to claim 11, wherein the second element is a trivalent cation. 16. The piezoelectric vibrator according to claim 11, wherein the second element is at least one element selected from W, Zr, Fe, Ta, Cr, Ti, and Ni. 17. The piezoelectric vibrator according to claim 12, wherein the second element is at least one element selected from W, Zr, Fe, Ta, Cr, Ti, and Ni. 18. The piezoelectric vibrator according to claim 13, wherein the second element is at least one element selected from W, Zr, Fe, Ta, Cr, Ti, and Ni. 19. The piezoelectric vibrator according to claim 14, wherein the second element is at least one element selected from W, Zr, Fe, Ta, Cr, Ti, and Ni. 20. The piezoelectric vibrator according to claim 11, wherein a percentage ratio of a number of atoms of the second element to a total number of Al atoms and atoms of the first element is 0.01 at % to 1.00 at %. | 2,800 |
11,619 | 11,619 | 15,687,180 | 2,887 | A Radio Frequency Identification (RFID) tag according to one embodiment includes a housing configured for coupling to an object, control circuitry coupled to the housing, and a memory for storing information, the information including a service history of the object. | 1. A Radio Frequency Identification (RFID) tag, comprising:
a housing configured for coupling to an object; control circuitry coupled to the housing; and a memory for storing information, the information including a service history of the object. 2. The RFID tag as recited in claim 1, wherein the service history of the object includes one or more dates of service and one or more types of service. 3. The RFID tag as recited in claim 1, wherein the information further includes a registration number associated with the object. 4. The RFID tag as recited in claim 1, wherein the tag is operatively coupled to an electrical system of the object. 5. The RFID tag as recited in claim 1, wherein the control circuitry draws power from a secondary power source when the secondary power source is generating electricity. 6. The RFID tag as recited in claim 5, wherein the control circuitry remains in an active state when drawing power from the secondary power source. 7. The RFID tag as recited in claim 1, wherein access to portions of the information stored in the memory is selectively allowed or denied based on information received from an inquiring entity. 8. The RFID tag as recited in claim 1, wherein the housing is configured for permanent coupling to the object. 9. The RFID tag as recited in claim 1, wherein the housing is configured for detachable coupling to the object. 10. The RFID tag as recited in claim 1, further comprising a display device, the display device displaying at least a portion of the information. 11. The RFID tag as recited in claim 1, wherein the RFID tag further comprises a first power source including a capacitor for providing power to the control circuitry. 12. The RFID tag of claim 1, wherein the RFID tag further comprises a first power source including at least one of a battery for providing power to the control circuitry. 13. The RFID tag of claim 1, wherein the tag is configured such that the information includes user programmable information. 14. A Radio Frequency Identification (RFID) system, comprising:
a plurality of RFID tags, wherein each of the RFID tags include:
a housing configured for coupling to an object,
control circuitry coupled to the housing, and
a memory for storing information, the information including a service history of the object; and
an RFID interrogator in communication with the RFID tags. 15. A Radio Frequency Identification (RFID) tag, comprising:
a housing configured for coupling to an object; control circuitry coupled to the housing; and a memory for storing information, the information including temperature information, shock information, battery information, and location information. 16. The RFID tag of claim 15, wherein the object includes a pallet. 17. The RFID tag of claim 15, wherein the housing is configured for permanent coupling to the object. 18. The RFID tag of claim 15, wherein the housing is configured for detachable coupling to the object. 19. The RFID tag of claim 15, wherein the RFID tag further comprises a first power source including a capacitor for providing power to the control circuitry. 20. The RFID tag of claim 15, wherein the RFID tag further comprises a first power source including a battery for providing power to the control circuitry. | A Radio Frequency Identification (RFID) tag according to one embodiment includes a housing configured for coupling to an object, control circuitry coupled to the housing, and a memory for storing information, the information including a service history of the object.1. A Radio Frequency Identification (RFID) tag, comprising:
a housing configured for coupling to an object; control circuitry coupled to the housing; and a memory for storing information, the information including a service history of the object. 2. The RFID tag as recited in claim 1, wherein the service history of the object includes one or more dates of service and one or more types of service. 3. The RFID tag as recited in claim 1, wherein the information further includes a registration number associated with the object. 4. The RFID tag as recited in claim 1, wherein the tag is operatively coupled to an electrical system of the object. 5. The RFID tag as recited in claim 1, wherein the control circuitry draws power from a secondary power source when the secondary power source is generating electricity. 6. The RFID tag as recited in claim 5, wherein the control circuitry remains in an active state when drawing power from the secondary power source. 7. The RFID tag as recited in claim 1, wherein access to portions of the information stored in the memory is selectively allowed or denied based on information received from an inquiring entity. 8. The RFID tag as recited in claim 1, wherein the housing is configured for permanent coupling to the object. 9. The RFID tag as recited in claim 1, wherein the housing is configured for detachable coupling to the object. 10. The RFID tag as recited in claim 1, further comprising a display device, the display device displaying at least a portion of the information. 11. The RFID tag as recited in claim 1, wherein the RFID tag further comprises a first power source including a capacitor for providing power to the control circuitry. 12. The RFID tag of claim 1, wherein the RFID tag further comprises a first power source including at least one of a battery for providing power to the control circuitry. 13. The RFID tag of claim 1, wherein the tag is configured such that the information includes user programmable information. 14. A Radio Frequency Identification (RFID) system, comprising:
a plurality of RFID tags, wherein each of the RFID tags include:
a housing configured for coupling to an object,
control circuitry coupled to the housing, and
a memory for storing information, the information including a service history of the object; and
an RFID interrogator in communication with the RFID tags. 15. A Radio Frequency Identification (RFID) tag, comprising:
a housing configured for coupling to an object; control circuitry coupled to the housing; and a memory for storing information, the information including temperature information, shock information, battery information, and location information. 16. The RFID tag of claim 15, wherein the object includes a pallet. 17. The RFID tag of claim 15, wherein the housing is configured for permanent coupling to the object. 18. The RFID tag of claim 15, wherein the housing is configured for detachable coupling to the object. 19. The RFID tag of claim 15, wherein the RFID tag further comprises a first power source including a capacitor for providing power to the control circuitry. 20. The RFID tag of claim 15, wherein the RFID tag further comprises a first power source including a battery for providing power to the control circuitry. | 2,800 |
11,620 | 11,620 | 14,812,723 | 2,856 | A method of measuring untwist in an gas turbine engine airfoil, the method includes measuring first and second cooling holes on an exterior airfoil surface of an airfoil, determining untwist in a chord-wise direction and/or creep in a radial direction based upon the measurement, evaluating the determination relative to reference information for the airfoil, and outputting a part status based upon the evaluation. | 1. A method of measuring untwist in an gas turbine engine airfoil, the method comprising:
measuring first and second cooling holes on an exterior airfoil surface of an airfoil; determining untwist in a chord-wise direction of the airfoil based upon the measurement; evaluating the determination relative to reference information for the airfoil; and outputting a part status based upon the evaluation. 2. The method according to claim 1, wherein the first cooling hole is near a leading edge of the airfoil, and a second cooling hole is near a trailing edge of the airfoil. 3. The method according to claim 1, wherein the first and second cooling holes are provided on a pressure side of the airfoil. 4. The method according to claim 1, comprising the step of clamping the airfoil in a fixture, and the measuring step is performed with the airfoil in the fixture. 5. The method according to claim 1, wherein the measuring step is performed by optically measuring the first and second cooling holes. 6. The method according to claim 5, wherein the measuring step includes determining a untwist focal distance to the first and second cooling holes, and the reference information includes a reference focal distance of a new part. 7. The method according to claim 1, wherein the determining step includes calculating a line in the chord-wised direction between the first and second cooling holes. 8. The method according to claim 1, wherein the outputting step includes displaying a message as to whether the part is within desired specifications that correspond to the reference information. 9. The method according to claim 1, wherein the determining step includes calculating a reference point within the measured cooling hole based upon a perimeter of the cooling hole. 10. A method of measuring creep in an gas turbine engine airfoil, the method comprising:
measuring first and second cooling holes near a trailing edge of an exterior airfoil surface; determining creep based upon the measurement; evaluating the determination relative to reference information for the airfoil; and outputting a part status based upon the evaluation. 11. The method according to claim 10, wherein the determining step includes determining creep in a radial direction of the airfoil. 12. The method according to claim 10, wherein the first and second cooling holes are arranged in a row. 13. The method according to claim 12, wherein the row is an aft-most row of cooling holes on the exterior airfoil surface. 14. The method according to claim 12, wherein the first cooling hole is arranged radially inward from a cooling hole closest to an airfoil tip. 15. The method according to claim 10, wherein the determining step includes calculating a reference point within the measured cooling hole based upon a perimeter of the cooling hole. 16. The method according to claim 10, wherein the first and second cooling holes are provided on a pressure side of the airfoil. 17. The method according to claim 10, comprising the step of clamping the airfoil in a fixture, and the measuring step is performed with the airfoil in the fixture. 18. The method according to claim 10, wherein the measuring step is performed by optically measuring the first and second cooling holes. 19. The method according to claim 10, wherein the outputting step includes displaying a message as to whether the part is within desired specifications that correspond to the reference information. | A method of measuring untwist in an gas turbine engine airfoil, the method includes measuring first and second cooling holes on an exterior airfoil surface of an airfoil, determining untwist in a chord-wise direction and/or creep in a radial direction based upon the measurement, evaluating the determination relative to reference information for the airfoil, and outputting a part status based upon the evaluation.1. A method of measuring untwist in an gas turbine engine airfoil, the method comprising:
measuring first and second cooling holes on an exterior airfoil surface of an airfoil; determining untwist in a chord-wise direction of the airfoil based upon the measurement; evaluating the determination relative to reference information for the airfoil; and outputting a part status based upon the evaluation. 2. The method according to claim 1, wherein the first cooling hole is near a leading edge of the airfoil, and a second cooling hole is near a trailing edge of the airfoil. 3. The method according to claim 1, wherein the first and second cooling holes are provided on a pressure side of the airfoil. 4. The method according to claim 1, comprising the step of clamping the airfoil in a fixture, and the measuring step is performed with the airfoil in the fixture. 5. The method according to claim 1, wherein the measuring step is performed by optically measuring the first and second cooling holes. 6. The method according to claim 5, wherein the measuring step includes determining a untwist focal distance to the first and second cooling holes, and the reference information includes a reference focal distance of a new part. 7. The method according to claim 1, wherein the determining step includes calculating a line in the chord-wised direction between the first and second cooling holes. 8. The method according to claim 1, wherein the outputting step includes displaying a message as to whether the part is within desired specifications that correspond to the reference information. 9. The method according to claim 1, wherein the determining step includes calculating a reference point within the measured cooling hole based upon a perimeter of the cooling hole. 10. A method of measuring creep in an gas turbine engine airfoil, the method comprising:
measuring first and second cooling holes near a trailing edge of an exterior airfoil surface; determining creep based upon the measurement; evaluating the determination relative to reference information for the airfoil; and outputting a part status based upon the evaluation. 11. The method according to claim 10, wherein the determining step includes determining creep in a radial direction of the airfoil. 12. The method according to claim 10, wherein the first and second cooling holes are arranged in a row. 13. The method according to claim 12, wherein the row is an aft-most row of cooling holes on the exterior airfoil surface. 14. The method according to claim 12, wherein the first cooling hole is arranged radially inward from a cooling hole closest to an airfoil tip. 15. The method according to claim 10, wherein the determining step includes calculating a reference point within the measured cooling hole based upon a perimeter of the cooling hole. 16. The method according to claim 10, wherein the first and second cooling holes are provided on a pressure side of the airfoil. 17. The method according to claim 10, comprising the step of clamping the airfoil in a fixture, and the measuring step is performed with the airfoil in the fixture. 18. The method according to claim 10, wherein the measuring step is performed by optically measuring the first and second cooling holes. 19. The method according to claim 10, wherein the outputting step includes displaying a message as to whether the part is within desired specifications that correspond to the reference information. | 2,800 |
11,621 | 11,621 | 15,023,330 | 2,882 | A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus having an illuminator and projection optics, the method including: computing a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, at least some of the design variables being characteristics of the illumination produced by the illuminator and of the design layout, wherein the multi-variable cost function is a function of a three-dimensional resist profile on the substrate, or a three-dimensional radiation field projected from the projection optics, or both; and reconfiguring one or more characteristics of the lithographic process by adjusting the design variables until a predefined termination condition is satisfied. | 1. A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus comprising an illuminator and projection optics, the method comprising:
computing, by a hardware computer device, a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, at least some of the design variables being characteristics of the illumination produced by the illuminator and of the design layout, wherein the multi-variable cost function is a function of a three-dimensional resist profile on the substrate, or a three-dimensional radiation field projected from the projection optics, or both; and reconfiguring one or more of the characteristics of the lithographic process by adjusting the design variables until a predefined termination condition is satisfied. 2. The method of claim 1, wherein the multi-variable cost function is a function of a first characteristic and a second characteristic of the three-dimensional resist profile, the first and second characteristics of the three-dimensional resist profile associated with portions of the three-dimensional resist profile at different distances from the substrate, or a function of a first characteristic and a second characteristic of the three-dimensional radiation field, the first and second characteristics of the three-dimensional radiation field associated with portions of the three-dimensional radiation field at different distances from the substrate. 3. The method of claim 2, wherein the first and second characteristics are selected from: MEEF, ILS, edge location, edge placement error, radiation intensity, phase and/or a combination thereof. 4. The method of claim 2, wherein the multi-variable cost function is a function of a difference between the first characteristic and the second characteristic. 5. The method of claim 1, wherein the multi-variable cost function is a function of a characteristic of a cross-section of a resist image along a surface not parallel to the substrate. 6. The method of claim 5, wherein the surface is perpendicular to the substrate. 7. The method of claim 1, wherein the multi-variable cost function is a function of a characteristic of a first aerial image and a characteristic of a second aerial image, wherein the first and second aerial images are not on a same plane. 8. The method of claim 1, wherein the multi-variable cost function is a function of a three-dimensional resist profile on the substrate and further comprising predicting the three-dimensional resist profile using a resist model. 9. The method of claim 1, wherein the reconfiguring comprises redetermining the three-dimensional resist profile, the three-dimensional radiation field, or both, using at least some of the design variables that are characteristics of the design layout and/or the illumination produced by the illuminator and that are adjusted. 10. The method of claim 1, wherein the reconfiguring comprises computing the multi-variable cost function using a projection optics model. 11. The method of claim 1, wherein iterative reconfiguration is performed without constraints or with constraints dictating the range of at least some of the design variables. 12. The method of claim 1, wherein at least some of the design variables are under a constraint representing a physical restriction in a hardware implementation of the lithographic projection apparatus, wherein the constraint includes one or more selected from: a tuning range, a rule governing patterning device manufacturability, and/or interdependence between the design variables. 13. The method of claim 1, wherein the cost function is a function of one or more selected from: edge placement error, critical dimension, resist contour distance, worst defect size, and/or best focus shift. 14. The method of claim 1, wherein the design layout comprises an assist feature, and wherein the assist feature comprises a SRAF (Sub Resolution Assist Feature) and/or PRAF (Printable Resolution Assist Feature). 15. A non-transitory computer program product comprising a computer readable medium having instructions recorded thereon, the instructions when executed by a computer implementing a method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus comprising an illuminator and projection optics, the method comprising:
computing, by a hardware computer device, a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, at least some of the design variables being characteristics of the illumination produced by the illuminator and the design layout, wherein the multi-variable cost function is a function of a three-dimensional resist profile on the substrate, or a three-dimensional radiation field projected from the projection optics, or both; and reconfiguring one or more of the characteristics of the lithographic process by adjusting the design variables until a predefined termination condition is satisfied. 16. The non-transitory computer program product of claim 15, wherein the multi-variable cost function is a function of a first characteristic and a second characteristic of the three-dimensional resist profile, the first and second characteristics of the three-dimensional resist profile associated with portions of the three-dimensional resist profile at different distances from the substrate, or a function of a first characteristic and a second characteristic of the three-dimensional radiation field, the first and second characteristics of the three-dimensional radiation field associated with portions of the three-dimensional radiation field at different distances from the substrate. 17. The non-transitory computer program product of claim 16, wherein the first and second characteristics are selected from: MEEF, ILS, edge location, edge placement error, radiation intensity, phase and/or a combination thereof. 18. The non-transitory computer program product of claim 15, wherein the multi-variable cost function is a function of a characteristic of a cross-section of a resist image along a surface not parallel to the substrate. 19. The non-transitory computer program product of claim 15, wherein the multi-variable cost function is a function of a characteristic of a first aerial image and a characteristic of a second aerial image, wherein the first and second aerial images are not on a same plane. 20. The non-transitory computer program product of claim 15, wherein the cost function is a function of one or more selected from: edge placement error, critical dimension, resist contour distance, worst defect size, and/or best focus shift. | A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus having an illuminator and projection optics, the method including: computing a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, at least some of the design variables being characteristics of the illumination produced by the illuminator and of the design layout, wherein the multi-variable cost function is a function of a three-dimensional resist profile on the substrate, or a three-dimensional radiation field projected from the projection optics, or both; and reconfiguring one or more characteristics of the lithographic process by adjusting the design variables until a predefined termination condition is satisfied.1. A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus comprising an illuminator and projection optics, the method comprising:
computing, by a hardware computer device, a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, at least some of the design variables being characteristics of the illumination produced by the illuminator and of the design layout, wherein the multi-variable cost function is a function of a three-dimensional resist profile on the substrate, or a three-dimensional radiation field projected from the projection optics, or both; and reconfiguring one or more of the characteristics of the lithographic process by adjusting the design variables until a predefined termination condition is satisfied. 2. The method of claim 1, wherein the multi-variable cost function is a function of a first characteristic and a second characteristic of the three-dimensional resist profile, the first and second characteristics of the three-dimensional resist profile associated with portions of the three-dimensional resist profile at different distances from the substrate, or a function of a first characteristic and a second characteristic of the three-dimensional radiation field, the first and second characteristics of the three-dimensional radiation field associated with portions of the three-dimensional radiation field at different distances from the substrate. 3. The method of claim 2, wherein the first and second characteristics are selected from: MEEF, ILS, edge location, edge placement error, radiation intensity, phase and/or a combination thereof. 4. The method of claim 2, wherein the multi-variable cost function is a function of a difference between the first characteristic and the second characteristic. 5. The method of claim 1, wherein the multi-variable cost function is a function of a characteristic of a cross-section of a resist image along a surface not parallel to the substrate. 6. The method of claim 5, wherein the surface is perpendicular to the substrate. 7. The method of claim 1, wherein the multi-variable cost function is a function of a characteristic of a first aerial image and a characteristic of a second aerial image, wherein the first and second aerial images are not on a same plane. 8. The method of claim 1, wherein the multi-variable cost function is a function of a three-dimensional resist profile on the substrate and further comprising predicting the three-dimensional resist profile using a resist model. 9. The method of claim 1, wherein the reconfiguring comprises redetermining the three-dimensional resist profile, the three-dimensional radiation field, or both, using at least some of the design variables that are characteristics of the design layout and/or the illumination produced by the illuminator and that are adjusted. 10. The method of claim 1, wherein the reconfiguring comprises computing the multi-variable cost function using a projection optics model. 11. The method of claim 1, wherein iterative reconfiguration is performed without constraints or with constraints dictating the range of at least some of the design variables. 12. The method of claim 1, wherein at least some of the design variables are under a constraint representing a physical restriction in a hardware implementation of the lithographic projection apparatus, wherein the constraint includes one or more selected from: a tuning range, a rule governing patterning device manufacturability, and/or interdependence between the design variables. 13. The method of claim 1, wherein the cost function is a function of one or more selected from: edge placement error, critical dimension, resist contour distance, worst defect size, and/or best focus shift. 14. The method of claim 1, wherein the design layout comprises an assist feature, and wherein the assist feature comprises a SRAF (Sub Resolution Assist Feature) and/or PRAF (Printable Resolution Assist Feature). 15. A non-transitory computer program product comprising a computer readable medium having instructions recorded thereon, the instructions when executed by a computer implementing a method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus comprising an illuminator and projection optics, the method comprising:
computing, by a hardware computer device, a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, at least some of the design variables being characteristics of the illumination produced by the illuminator and the design layout, wherein the multi-variable cost function is a function of a three-dimensional resist profile on the substrate, or a three-dimensional radiation field projected from the projection optics, or both; and reconfiguring one or more of the characteristics of the lithographic process by adjusting the design variables until a predefined termination condition is satisfied. 16. The non-transitory computer program product of claim 15, wherein the multi-variable cost function is a function of a first characteristic and a second characteristic of the three-dimensional resist profile, the first and second characteristics of the three-dimensional resist profile associated with portions of the three-dimensional resist profile at different distances from the substrate, or a function of a first characteristic and a second characteristic of the three-dimensional radiation field, the first and second characteristics of the three-dimensional radiation field associated with portions of the three-dimensional radiation field at different distances from the substrate. 17. The non-transitory computer program product of claim 16, wherein the first and second characteristics are selected from: MEEF, ILS, edge location, edge placement error, radiation intensity, phase and/or a combination thereof. 18. The non-transitory computer program product of claim 15, wherein the multi-variable cost function is a function of a characteristic of a cross-section of a resist image along a surface not parallel to the substrate. 19. The non-transitory computer program product of claim 15, wherein the multi-variable cost function is a function of a characteristic of a first aerial image and a characteristic of a second aerial image, wherein the first and second aerial images are not on a same plane. 20. The non-transitory computer program product of claim 15, wherein the cost function is a function of one or more selected from: edge placement error, critical dimension, resist contour distance, worst defect size, and/or best focus shift. | 2,800 |
11,622 | 11,622 | 15,458,737 | 2,855 | Traditional flow sensors include an upstream resistive sensor element, a downstream resistive sensor element and an intervening heater resistive element. To help reduce the size and/or cost of such flow sensor, it is contemplated that the heater resistor may be eliminated. When so provided, the space required for the heater resistive element, as well as the corresponding heater control circuit, may be eliminated. This can reduce the cost, size and complexity of the flow sensor. | 1.-15. (canceled) 16. A flow sensor for sensing a fluid flow rate through a flow channel, the flow sensor comprising:
an upstream resistive element having a first resistance that changes with temperature; a downstream resistive element having a second resistance that changes with temperature, wherein the downstream resistive element is situated downstream of the upstream resistive element in the flow channel; the upstream resistive element and the downstream resistive element are operatively connected in a bridge circuit, wherein the bridge circuit is configured to supply a current to each of the upstream resistive element and the downstream resistive element, wherein the current causes resistive heating in both the upstream resistive element and the downstream resistive element such that both the upstream resistive element and the downstream resistive element are heated above the ambient temperature of the fluid flowing through the flow channel, wherein fluid flow through the flow channel causing the temperature of the upstream resistive element to be lower than the temperature of the downstream resistive element; and wherein a difference in temperature between the upstream resistive element and the downstream resistive element causes an imbalance in the bridge circuit that is related to the fluid flow rate of the fluid flowing though the flow channel. 17. The flow sensor of claim 16, wherein the first resistance is substantially the same as the second resistance when the fluid flow rate is at zero. 18. The flow sensor of claim 16, wherein the upstream resistive element has a first temperature coefficient, and the downstream resistive element has a second temperature coefficient, wherein the first temperature coefficient is substantially the same as the second temperature coefficient. 19. The flow sensor of claim 16, wherein the upstream resistive element and the downstream resistive element are formed from a common set of one or more layers. 20. The flow sensor of claim 16, wherein the upstream resistive element and the downstream resistive element are not separated by an intervening heater element that has a substantially lower resistance than the first resistance. 21. The flow sensor of claim 16, wherein the upstream resistive element and the downstream resistive element are not separated by an intervening heater element. 22. A flow sensor device comprising:
a substrate; a membrane suspended by the substrate; an upstream resistive element situated on the membrane; a downstream resistive element situated on the membrane adjacent the upstream resistive element, with no intervening heater element positioned between the upstream resistive element and the downstream resistive element; a first upstream node coupled to a first end of the upstream resistive element and a second upstream node coupled to a second end of the upstream resistive element; a first downstream node coupled to a first end of the downstream resistive element and a second downstream node coupled to a second end of the downstream resistive element; wherein the upstream resistive element has an electrical resistance between the first upstream node and the second upstream node, and the downstream resistive element has an electrical resistance between the first downstream node and the second downstream node; and wherein the resistance of the upstream resistive element is within 20 percent or less of the resistance of the downstream resistive element when the upstream resistive element is at the same temperature as the downstream resistive element. 23. The flow sensor device of claim 22, wherein the resistance of the upstream resistive element is within 10 percent or less of the resistance of the downstream resistive element when the upstream resistive element is at the same temperature as the downstream resistive element. 24. The flow sensor device of claim 22, wherein the resistance of the upstream resistive element is within 1 percent or less of the resistance of the downstream resistive element when the upstream resistive element is at the same temperature as the downstream resistive element. 25. The flow sensor device of claim 22, wherein the upstream resistive element has a first temperature coefficient, and the downstream resistive element has a second temperature coefficient, wherein the first temperature coefficient is the same as the second temperature coefficient. 26. The flow sensor device of claim 22, wherein the upstream resistive element and the downstream resistive element are formed from a common set of one or more layers on the membrane. 27. A flow sensor die comprising:
a substrate; a membrane suspended by the substrate; an upstream resistive element situated on the membrane; a downstream resistive element situated on the membrane adjacent the upstream resistive element, with no intervening heater element positioned between the upstream resistive element and the downstream resistive element. 28. The flow sensor die of claim 27, further comprising:
a slit formed through the membrane between the upstream resistive element and the downstream resistive element. 29. The flow sensor die of claim 27, wherein the upstream resistive element and the downstream resistive element are spaced substantially the same distance from the slit. 30. The flow sensor die of claim 27, wherein the flow sensor die is absent a heater control circuit. 31. The flow sensor die of claim 27, comprising two upstream resistive elements on the membrane, and two downstream resistive elements on the membrane. 32. The flow sensor die of claim 27, wherein the upstream resistive element and the downstream resistive element are connected in a Wheatstone bridge configuration. 33. The flow sensor die of claim 27, wherein the upstream resistive element and the downstream resistive element have substantially the same resistance. 34. The flow sensor die of claim 27, wherein the upstream resistive element and the downstream resistive element have substantially the same temperature coefficient. 35. The flow sensor die of claim 27, wherein the upstream resistive element and the downstream resistive element have a resistance in the range of 300-900 ohms. | Traditional flow sensors include an upstream resistive sensor element, a downstream resistive sensor element and an intervening heater resistive element. To help reduce the size and/or cost of such flow sensor, it is contemplated that the heater resistor may be eliminated. When so provided, the space required for the heater resistive element, as well as the corresponding heater control circuit, may be eliminated. This can reduce the cost, size and complexity of the flow sensor.1.-15. (canceled) 16. A flow sensor for sensing a fluid flow rate through a flow channel, the flow sensor comprising:
an upstream resistive element having a first resistance that changes with temperature; a downstream resistive element having a second resistance that changes with temperature, wherein the downstream resistive element is situated downstream of the upstream resistive element in the flow channel; the upstream resistive element and the downstream resistive element are operatively connected in a bridge circuit, wherein the bridge circuit is configured to supply a current to each of the upstream resistive element and the downstream resistive element, wherein the current causes resistive heating in both the upstream resistive element and the downstream resistive element such that both the upstream resistive element and the downstream resistive element are heated above the ambient temperature of the fluid flowing through the flow channel, wherein fluid flow through the flow channel causing the temperature of the upstream resistive element to be lower than the temperature of the downstream resistive element; and wherein a difference in temperature between the upstream resistive element and the downstream resistive element causes an imbalance in the bridge circuit that is related to the fluid flow rate of the fluid flowing though the flow channel. 17. The flow sensor of claim 16, wherein the first resistance is substantially the same as the second resistance when the fluid flow rate is at zero. 18. The flow sensor of claim 16, wherein the upstream resistive element has a first temperature coefficient, and the downstream resistive element has a second temperature coefficient, wherein the first temperature coefficient is substantially the same as the second temperature coefficient. 19. The flow sensor of claim 16, wherein the upstream resistive element and the downstream resistive element are formed from a common set of one or more layers. 20. The flow sensor of claim 16, wherein the upstream resistive element and the downstream resistive element are not separated by an intervening heater element that has a substantially lower resistance than the first resistance. 21. The flow sensor of claim 16, wherein the upstream resistive element and the downstream resistive element are not separated by an intervening heater element. 22. A flow sensor device comprising:
a substrate; a membrane suspended by the substrate; an upstream resistive element situated on the membrane; a downstream resistive element situated on the membrane adjacent the upstream resistive element, with no intervening heater element positioned between the upstream resistive element and the downstream resistive element; a first upstream node coupled to a first end of the upstream resistive element and a second upstream node coupled to a second end of the upstream resistive element; a first downstream node coupled to a first end of the downstream resistive element and a second downstream node coupled to a second end of the downstream resistive element; wherein the upstream resistive element has an electrical resistance between the first upstream node and the second upstream node, and the downstream resistive element has an electrical resistance between the first downstream node and the second downstream node; and wherein the resistance of the upstream resistive element is within 20 percent or less of the resistance of the downstream resistive element when the upstream resistive element is at the same temperature as the downstream resistive element. 23. The flow sensor device of claim 22, wherein the resistance of the upstream resistive element is within 10 percent or less of the resistance of the downstream resistive element when the upstream resistive element is at the same temperature as the downstream resistive element. 24. The flow sensor device of claim 22, wherein the resistance of the upstream resistive element is within 1 percent or less of the resistance of the downstream resistive element when the upstream resistive element is at the same temperature as the downstream resistive element. 25. The flow sensor device of claim 22, wherein the upstream resistive element has a first temperature coefficient, and the downstream resistive element has a second temperature coefficient, wherein the first temperature coefficient is the same as the second temperature coefficient. 26. The flow sensor device of claim 22, wherein the upstream resistive element and the downstream resistive element are formed from a common set of one or more layers on the membrane. 27. A flow sensor die comprising:
a substrate; a membrane suspended by the substrate; an upstream resistive element situated on the membrane; a downstream resistive element situated on the membrane adjacent the upstream resistive element, with no intervening heater element positioned between the upstream resistive element and the downstream resistive element. 28. The flow sensor die of claim 27, further comprising:
a slit formed through the membrane between the upstream resistive element and the downstream resistive element. 29. The flow sensor die of claim 27, wherein the upstream resistive element and the downstream resistive element are spaced substantially the same distance from the slit. 30. The flow sensor die of claim 27, wherein the flow sensor die is absent a heater control circuit. 31. The flow sensor die of claim 27, comprising two upstream resistive elements on the membrane, and two downstream resistive elements on the membrane. 32. The flow sensor die of claim 27, wherein the upstream resistive element and the downstream resistive element are connected in a Wheatstone bridge configuration. 33. The flow sensor die of claim 27, wherein the upstream resistive element and the downstream resistive element have substantially the same resistance. 34. The flow sensor die of claim 27, wherein the upstream resistive element and the downstream resistive element have substantially the same temperature coefficient. 35. The flow sensor die of claim 27, wherein the upstream resistive element and the downstream resistive element have a resistance in the range of 300-900 ohms. | 2,800 |
11,623 | 11,623 | 14,806,979 | 2,834 | A power tool with a motor which is rotatable in a forward direction and a reverse direction. A tool holder is driven by the motor. The power tool has a user operable trigger for operating the motor, a reversing switch for choosing the direction of rotation of the motor and a controller. The controller determines a direction of rotation of the motor based on a characteristic of the motor. | 1. A power tool comprising:
a motor configured to be rotatable in a forward direction and a reverse direction; a tool holder driven by the motor; a user operable trigger for operating the motor; a reversing switch for choosing the direction of rotation of the motor; and a controller; wherein the controller is configured to determine a direction of rotation of the motor based on a characteristic of the motor. 2. The power tool of claim 1, wherein the tool holder comprises a chuck. 3. The power tool of claim 1, further comprising a transmission between the motor and the chuck. 4. The power tool of claim 1, wherein the characteristic of the motor is voltage. 5. The power tool of claim 1, wherein the controller is configured to operate the motor in accordance with the determined direction of rotation of the motor. 6. The power tool of claim 1, wherein the controller is configured to operate the motor according to a first control scheme when the motor is operating in a forward direction and a second control scheme when the motor is operating in a reverse direction. 7. The power tool of claim 1, wherein the controller is configured to control operation of the motor. 8. The power tool of claim 7, further comprising a motor controller; and
wherein the controller controls driving of the motor through the motor controller. 9. The power tool of claim 1, wherein the power tool is a drill. 10. A power tool comprising:
a motor configured to be rotatable in a forward direction and a reverse direction; a trigger switch for operating the motor; a user operable reversing switch for choosing the direction of rotation of the motor; and a controller; wherein the controller is configured to receive a signal from the motor; wherein the controller is configured to receive a signal from the trigger switch; and wherein the controller determines a direction of rotation of the motor based upon the signal received from the motor. 11. The power tool of claim 10, wherein the signal received from the motor is a motor voltage signal. 12. The power tool of claim 10, wherein the controller determines the direction of rotation of the motor after voltage is applied to the motor. 13. The power tool of claim 10, wherein the controller is configured to operate the power tool in a start-up mode when the signal is first received from the trigger indicating that the trigger switch has been closed. 14. The power tool of claim 13, wherein the controller is configured to operate the power tool in an operating mode, different than the start-up mode, after the controller determines the direction of rotation of the motor. 15. The power tool of claim 10, further comprising a tool holder driven by the motor. 16. A power tool comprising:
a motor configured to be rotatable in a forward direction and a reverse direction; a power source; a reversing box located between the power source and the motor such that the power source is at a first side of the reversing box and the motor is at a second side of the reversing box; a controller, the controller being operatively coupled to the first side to receive a first side signal from the first side, the controller also being operatively coupled to the second side to provide a second side signal to the second side. 17. The power tool of claim 16, wherein the controller determines the direction of rotation of the motor based on the first side signal. 18. The power tool of claim 17, wherein the controller drives the motor via the second side signal. 19. The power tool of claim 18, further comprising a motor controller between the power source and the reversing box; and
wherein the controller drives the motor via the motor controller. 20. The power tool of claim 18, further comprising at least one of a tool and a tool holder driven by the motor. | A power tool with a motor which is rotatable in a forward direction and a reverse direction. A tool holder is driven by the motor. The power tool has a user operable trigger for operating the motor, a reversing switch for choosing the direction of rotation of the motor and a controller. The controller determines a direction of rotation of the motor based on a characteristic of the motor.1. A power tool comprising:
a motor configured to be rotatable in a forward direction and a reverse direction; a tool holder driven by the motor; a user operable trigger for operating the motor; a reversing switch for choosing the direction of rotation of the motor; and a controller; wherein the controller is configured to determine a direction of rotation of the motor based on a characteristic of the motor. 2. The power tool of claim 1, wherein the tool holder comprises a chuck. 3. The power tool of claim 1, further comprising a transmission between the motor and the chuck. 4. The power tool of claim 1, wherein the characteristic of the motor is voltage. 5. The power tool of claim 1, wherein the controller is configured to operate the motor in accordance with the determined direction of rotation of the motor. 6. The power tool of claim 1, wherein the controller is configured to operate the motor according to a first control scheme when the motor is operating in a forward direction and a second control scheme when the motor is operating in a reverse direction. 7. The power tool of claim 1, wherein the controller is configured to control operation of the motor. 8. The power tool of claim 7, further comprising a motor controller; and
wherein the controller controls driving of the motor through the motor controller. 9. The power tool of claim 1, wherein the power tool is a drill. 10. A power tool comprising:
a motor configured to be rotatable in a forward direction and a reverse direction; a trigger switch for operating the motor; a user operable reversing switch for choosing the direction of rotation of the motor; and a controller; wherein the controller is configured to receive a signal from the motor; wherein the controller is configured to receive a signal from the trigger switch; and wherein the controller determines a direction of rotation of the motor based upon the signal received from the motor. 11. The power tool of claim 10, wherein the signal received from the motor is a motor voltage signal. 12. The power tool of claim 10, wherein the controller determines the direction of rotation of the motor after voltage is applied to the motor. 13. The power tool of claim 10, wherein the controller is configured to operate the power tool in a start-up mode when the signal is first received from the trigger indicating that the trigger switch has been closed. 14. The power tool of claim 13, wherein the controller is configured to operate the power tool in an operating mode, different than the start-up mode, after the controller determines the direction of rotation of the motor. 15. The power tool of claim 10, further comprising a tool holder driven by the motor. 16. A power tool comprising:
a motor configured to be rotatable in a forward direction and a reverse direction; a power source; a reversing box located between the power source and the motor such that the power source is at a first side of the reversing box and the motor is at a second side of the reversing box; a controller, the controller being operatively coupled to the first side to receive a first side signal from the first side, the controller also being operatively coupled to the second side to provide a second side signal to the second side. 17. The power tool of claim 16, wherein the controller determines the direction of rotation of the motor based on the first side signal. 18. The power tool of claim 17, wherein the controller drives the motor via the second side signal. 19. The power tool of claim 18, further comprising a motor controller between the power source and the reversing box; and
wherein the controller drives the motor via the motor controller. 20. The power tool of claim 18, further comprising at least one of a tool and a tool holder driven by the motor. | 2,800 |
11,624 | 11,624 | 14,358,634 | 2,882 | A display system includes a projector system to create a plurality of image streams and a plurality of combiners, each corresponding to one of the directions of the image streams and to reflect at least a portion of the image stream received at that combiner. The projector system includes an illumination source that emits electromagnetic radiation within a predetermined spectral band, an image generator that ascribes image characteristics to the radiation to create a plurality of image streams, and an image separation module to direct the image streams in a plurality of directions. | 1. A display system comprising:
a projector system to create a plurality of image streams, comprising:
an illumination source that emits electromagnetic radiation within a predetermined spectral band;
an image generator that ascribes image characteristics to the radiation to create a plurality of image streams; and
an image separation module to direct the image streams in a plurality of directions; and
a plurality of combiners, each corresponding to one of the directions of the image streams and to reflect at least a portion of the image stream received at that combiner. 2. The display system of claim 1 wherein the image separation module comprises a switching mirror to move between a plurality of rest positions and to direct the image streams in a respective particular direction based on the rest position. 3. The display system of claim 2 wherein the switching mirror comprises a micro electrical-mechanical system (MEMS) mirror. 4. The display system of claim 1 wherein the image separation module comprises:
a variable phase retarder to alter the polarization of each of the image streams based on the polarization of the image stream; and
a polarizing beam splitter to direct each image stream in a particular direction based on the polarization of the image stream. 5. The display system of claim 4 wherein the variable phase retarder is a liquid crystal modulator. 6. The display system of claim 1 wherein the image generator interleaves image streams intended for multiple targets into a single beam and transmits the interleaved image streams simultaneously. 7. The display system of claim 6 wherein the image separation module deinterleaves the image streams such that the image stream intended for a target corresponding to a first combiner is directed to the first combiner and the image stream intended for a target corresponding to a second combiner is directed to the second combiner. 8. The display system of claim 1 wherein the image generator multiplexes image streams intended for multiple targets into a single beam and transmits the multiplexed image streams simultaneously. 9. The display system of claim 8 wherein the image separation module demultiplexes the image streams such that the image stream intended for a target corresponding to a first combiner is directed to the first combiner and the image stream intended for a target corresponding to a second combiner is directed to the second combiner. 10. The display system of claim 1 wherein the combiners comprise an inner surface to reflect a finite spectral band of the image stream and an outer surface to transmit visible light with substantially no deviation from an incident angle of the visible light on the outer surface. 11. The display system of claim 1 wherein each combiner directs collimated rays to an associated eye-motion box. 12. The display system of claim 1 wherein at least one combiner comprises a first concave surface and a second convex surface, wherein the first surface reflects and collimates at least a portion of the image stream and the combiner transmits visible light with substantially no deviation from an incident angle of the visible light on the outer surface. 13. A method, comprising:
emitting electromagnetic radiation within a predetermined spectral band; ascribing image characteristics to the radiation, thereby creating a plurality of image streams; directing each of the image streams in a different direction from the other image streams. 14. The method of claim 13 wherein image characteristics from a first and second image stream are ascribed to the radiation in a time multiplexed manner and the method further comprises directing the first image stream in a first direction and directing the second image stream in a second direction with a synchronized optical switching element. 15. The method of claim 13 wherein the electromagnetic radiation comprises beams having a first and second polarization and image characteristics from a first image stream are ascribed to the beams having the first polarization and image characteristics from a second image stream are ascribed to the beams having the second polarization and the method further comprises directing each image stream in a particular direction based on the polarization of the image stream. 16. The method of claim 13 further comprising:
interleaving image streams intended for multiple targets into a single beam; and
transmitting the interleaved image streams simultaneously. 17. The method of claim 16 further comprising deinterleaving the image streams such that the image stream intended for a target corresponding to a first combiner is directed to the first combiner and the image stream intended for a target corresponding to a second combiner is directed to the second combiner. 18. The method of claim 13 further comprising:
multiplexing image streams intended for multiple targets into a single beam; and
transmitting the multiplexed image streams simultaneously. 19. The method of claim 18 further comprising demultiplexing the image streams such that the image stream intended for a target corresponding to a first combiner is directed to the first combiner and the image stream intended for a target corresponding to a second combiner is directed to the second combiner. | A display system includes a projector system to create a plurality of image streams and a plurality of combiners, each corresponding to one of the directions of the image streams and to reflect at least a portion of the image stream received at that combiner. The projector system includes an illumination source that emits electromagnetic radiation within a predetermined spectral band, an image generator that ascribes image characteristics to the radiation to create a plurality of image streams, and an image separation module to direct the image streams in a plurality of directions.1. A display system comprising:
a projector system to create a plurality of image streams, comprising:
an illumination source that emits electromagnetic radiation within a predetermined spectral band;
an image generator that ascribes image characteristics to the radiation to create a plurality of image streams; and
an image separation module to direct the image streams in a plurality of directions; and
a plurality of combiners, each corresponding to one of the directions of the image streams and to reflect at least a portion of the image stream received at that combiner. 2. The display system of claim 1 wherein the image separation module comprises a switching mirror to move between a plurality of rest positions and to direct the image streams in a respective particular direction based on the rest position. 3. The display system of claim 2 wherein the switching mirror comprises a micro electrical-mechanical system (MEMS) mirror. 4. The display system of claim 1 wherein the image separation module comprises:
a variable phase retarder to alter the polarization of each of the image streams based on the polarization of the image stream; and
a polarizing beam splitter to direct each image stream in a particular direction based on the polarization of the image stream. 5. The display system of claim 4 wherein the variable phase retarder is a liquid crystal modulator. 6. The display system of claim 1 wherein the image generator interleaves image streams intended for multiple targets into a single beam and transmits the interleaved image streams simultaneously. 7. The display system of claim 6 wherein the image separation module deinterleaves the image streams such that the image stream intended for a target corresponding to a first combiner is directed to the first combiner and the image stream intended for a target corresponding to a second combiner is directed to the second combiner. 8. The display system of claim 1 wherein the image generator multiplexes image streams intended for multiple targets into a single beam and transmits the multiplexed image streams simultaneously. 9. The display system of claim 8 wherein the image separation module demultiplexes the image streams such that the image stream intended for a target corresponding to a first combiner is directed to the first combiner and the image stream intended for a target corresponding to a second combiner is directed to the second combiner. 10. The display system of claim 1 wherein the combiners comprise an inner surface to reflect a finite spectral band of the image stream and an outer surface to transmit visible light with substantially no deviation from an incident angle of the visible light on the outer surface. 11. The display system of claim 1 wherein each combiner directs collimated rays to an associated eye-motion box. 12. The display system of claim 1 wherein at least one combiner comprises a first concave surface and a second convex surface, wherein the first surface reflects and collimates at least a portion of the image stream and the combiner transmits visible light with substantially no deviation from an incident angle of the visible light on the outer surface. 13. A method, comprising:
emitting electromagnetic radiation within a predetermined spectral band; ascribing image characteristics to the radiation, thereby creating a plurality of image streams; directing each of the image streams in a different direction from the other image streams. 14. The method of claim 13 wherein image characteristics from a first and second image stream are ascribed to the radiation in a time multiplexed manner and the method further comprises directing the first image stream in a first direction and directing the second image stream in a second direction with a synchronized optical switching element. 15. The method of claim 13 wherein the electromagnetic radiation comprises beams having a first and second polarization and image characteristics from a first image stream are ascribed to the beams having the first polarization and image characteristics from a second image stream are ascribed to the beams having the second polarization and the method further comprises directing each image stream in a particular direction based on the polarization of the image stream. 16. The method of claim 13 further comprising:
interleaving image streams intended for multiple targets into a single beam; and
transmitting the interleaved image streams simultaneously. 17. The method of claim 16 further comprising deinterleaving the image streams such that the image stream intended for a target corresponding to a first combiner is directed to the first combiner and the image stream intended for a target corresponding to a second combiner is directed to the second combiner. 18. The method of claim 13 further comprising:
multiplexing image streams intended for multiple targets into a single beam; and
transmitting the multiplexed image streams simultaneously. 19. The method of claim 18 further comprising demultiplexing the image streams such that the image stream intended for a target corresponding to a first combiner is directed to the first combiner and the image stream intended for a target corresponding to a second combiner is directed to the second combiner. | 2,800 |
11,625 | 11,625 | 15,424,605 | 2,845 | Electronic devices are provided that contain wireless communications circuitry. The wireless communications circuitry may include radio-frequency transceiver circuitry and antenna structures. The antenna structures may include antennas such as inverted-F antennas that contain antenna resonating elements and antenna ground elements. Antenna resonating elements may be formed from patterned conductive traces on substrates such as flex circuit substrates. Antenna ground elements may be formed from conductive device structures such as metal housing walls. Support and biasing structures such as dielectric support members and layer of foam may be used to support and bias antenna resonating elements against planar device structures. The planar device structures against which the antenna resonating elements are biased may be planar dielectric members such as transparent layers of display cover glass or other planar structures. Adhesive may be interposed between the planar structures and the antenna resonating elements. | 1. An electronic device having opposing front and rear surfaces, comprising:
a housing comprising conductive sidewalls and a dielectric member that forms the rear surface of the electronic device; a display mounted in the housing at the front surface; and an antenna having an antenna ground, an antenna resonating element formed on the dielectric member, a first antenna feed terminal coupled to the antenna resonating element, and a second antenna feed terminal coupled to the antenna ground. 2. The electronic device defined in claim 1, wherein the conductive sidewalls form at least a portion of the antenna ground. 3. The electronic device defined in claim 1, wherein the dielectric member has opposing inner and outer surfaces, and wherein the antenna resonating element is formed on the inner surface. 4. The electronic device defined in claim 1, further comprising:
a printed circuit board mounted in the housing between the dielectric member and the display; and radio-frequency transceiver circuitry mounted on the printed circuit board, wherein the radio-frequency transceiver circuitry is coupled to the first antenna feed terminal and the second antenna feed terminal. 5. The electronic device defined in claim 1, wherein the antenna is a slot antenna. 6. The electronic device defined in claim 1, further comprising:
a flexible printed circuit comprising patterned traces that form at least a portion of the antenna resonating element. 7. The electronic device defined in claim 1, wherein the dielectric member comprises transparent dielectric material. 8. An electronic device, comprising:
a display including a display cover layer that forms a front surface of the electronic device; a dielectric member opposite the display cover layer that forms a rear surface of the electronic device opposite the front surface; conductive sidewalls that extend between the front and rear surfaces; conductive traces on the dielectric member that receive wireless signals through the dielectric member; and first and second feed terminals coupled to the conductive traces. 9. The electronic device defined in claim 8, further comprising:
a support structure interposed between the display cover layer and the dielectric member, wherein the conductive traces are interposed between the support structure and the dielectric member. 10. The electronic device defined in claim 9, wherein the support structure is formed of conductive material. 11. The electronic device defined in claim 8, further comprising:
a biasing structure interposed between the support structure and the display cover layer. 12. The electronic device defined in claim 11, wherein the biasing structure comprises foam. 13. The electronic device defined in claim 8, wherein the conductive traces form a loop. 14. The electronic device defined in claim 13, wherein the conductive traces are formed on the dielectric member at a center portion of the electronic device between the conductive sidewalls. 15. An electronic device, comprising:
a display including a display cover layer that forms a front surface of the electronic device; dielectric structures opposite the display cover layer that form at least a portion of a rear surface of the electronic device opposite the front surface; and an antenna comprising an antenna ground, an antenna resonating element that includes conductive traces formed directly on the dielectric structures, a first antenna feed terminal coupled to the antenna resonating element, and a second antenna feed terminal coupled to the antenna ground. 16. The electronic device defined in claim 15, wherein the dielectric structures form a portion of a housing for the electronic device, and wherein the housing has conductive sidewalls. 17. The electronic device defined in claim 16, wherein the conductive sidewalls form at least a portion of the antenna ground. 18. The electronic device defined in claim 17, wherein the dielectric structures comprise a dielectric plate that extends between the conductive sidewalls. 19. The electronic device defined in claim 15, wherein the dielectric structures include transparent dielectric material. 20. The electronic device defined in claim 19, wherein the display cover layer is transparent and wherein the display further comprises an array of pixels that emits light through the transparent display cover layer. | Electronic devices are provided that contain wireless communications circuitry. The wireless communications circuitry may include radio-frequency transceiver circuitry and antenna structures. The antenna structures may include antennas such as inverted-F antennas that contain antenna resonating elements and antenna ground elements. Antenna resonating elements may be formed from patterned conductive traces on substrates such as flex circuit substrates. Antenna ground elements may be formed from conductive device structures such as metal housing walls. Support and biasing structures such as dielectric support members and layer of foam may be used to support and bias antenna resonating elements against planar device structures. The planar device structures against which the antenna resonating elements are biased may be planar dielectric members such as transparent layers of display cover glass or other planar structures. Adhesive may be interposed between the planar structures and the antenna resonating elements.1. An electronic device having opposing front and rear surfaces, comprising:
a housing comprising conductive sidewalls and a dielectric member that forms the rear surface of the electronic device; a display mounted in the housing at the front surface; and an antenna having an antenna ground, an antenna resonating element formed on the dielectric member, a first antenna feed terminal coupled to the antenna resonating element, and a second antenna feed terminal coupled to the antenna ground. 2. The electronic device defined in claim 1, wherein the conductive sidewalls form at least a portion of the antenna ground. 3. The electronic device defined in claim 1, wherein the dielectric member has opposing inner and outer surfaces, and wherein the antenna resonating element is formed on the inner surface. 4. The electronic device defined in claim 1, further comprising:
a printed circuit board mounted in the housing between the dielectric member and the display; and radio-frequency transceiver circuitry mounted on the printed circuit board, wherein the radio-frequency transceiver circuitry is coupled to the first antenna feed terminal and the second antenna feed terminal. 5. The electronic device defined in claim 1, wherein the antenna is a slot antenna. 6. The electronic device defined in claim 1, further comprising:
a flexible printed circuit comprising patterned traces that form at least a portion of the antenna resonating element. 7. The electronic device defined in claim 1, wherein the dielectric member comprises transparent dielectric material. 8. An electronic device, comprising:
a display including a display cover layer that forms a front surface of the electronic device; a dielectric member opposite the display cover layer that forms a rear surface of the electronic device opposite the front surface; conductive sidewalls that extend between the front and rear surfaces; conductive traces on the dielectric member that receive wireless signals through the dielectric member; and first and second feed terminals coupled to the conductive traces. 9. The electronic device defined in claim 8, further comprising:
a support structure interposed between the display cover layer and the dielectric member, wherein the conductive traces are interposed between the support structure and the dielectric member. 10. The electronic device defined in claim 9, wherein the support structure is formed of conductive material. 11. The electronic device defined in claim 8, further comprising:
a biasing structure interposed between the support structure and the display cover layer. 12. The electronic device defined in claim 11, wherein the biasing structure comprises foam. 13. The electronic device defined in claim 8, wherein the conductive traces form a loop. 14. The electronic device defined in claim 13, wherein the conductive traces are formed on the dielectric member at a center portion of the electronic device between the conductive sidewalls. 15. An electronic device, comprising:
a display including a display cover layer that forms a front surface of the electronic device; dielectric structures opposite the display cover layer that form at least a portion of a rear surface of the electronic device opposite the front surface; and an antenna comprising an antenna ground, an antenna resonating element that includes conductive traces formed directly on the dielectric structures, a first antenna feed terminal coupled to the antenna resonating element, and a second antenna feed terminal coupled to the antenna ground. 16. The electronic device defined in claim 15, wherein the dielectric structures form a portion of a housing for the electronic device, and wherein the housing has conductive sidewalls. 17. The electronic device defined in claim 16, wherein the conductive sidewalls form at least a portion of the antenna ground. 18. The electronic device defined in claim 17, wherein the dielectric structures comprise a dielectric plate that extends between the conductive sidewalls. 19. The electronic device defined in claim 15, wherein the dielectric structures include transparent dielectric material. 20. The electronic device defined in claim 19, wherein the display cover layer is transparent and wherein the display further comprises an array of pixels that emits light through the transparent display cover layer. | 2,800 |
11,626 | 11,626 | 14,359,552 | 2,859 | A handheld tool carrying case includes at least one interior structuring unit having at least one interior structuring element, which is provided to delimit at least one inductive charge receiving region for at least one handheld tool battery. The interior structuring unit is configured to be combinable in a modular manner. | 1-15. (canceled) 16. A handheld tool carrying case, comprising:
at least one interior structuring unit having at least one interior structuring element which is provided to delimit at least one inductive charge receiving region for at least one handheld tool battery, wherein the at least one interior structuring unit is configured to be combinable in a modular manner. 17. The handheld tool carrying case as recited in claim 16, wherein the at least one interior structuring element is configured to be installable without tools with regard to the interior structuring unit. 18. The handheld tool carrying case as recited in claim 17, wherein the at least one interior structuring element is configured to be removable from the at least one interior structuring unit without using tools. 19. The handheld tool carrying case as recited in claim 18, wherein the interior structuring unit has at least one base element for positioning the interior structuring element. 20. The handheld tool carrying case as recited in claim 19, wherein the base element includes at least two fixation positions for securing the at least one interior structuring element. 21. The handheld tool carrying case as recited in claim 19, further comprising:
at least one housing part which is integrally formed with the base element. 22. The handheld tool carrying case as recited in claim 19, wherein the base element is formed by at least one space divider element. 23. The handheld tool carrying case as recited in claim 19, wherein the interior structuring element is provided for a plug-in connection. 24. The handheld tool carrying case as recited in claim 19, wherein the interior structuring element is configured as a space divider element. 25. The handheld tool carrying case as recited in claim 19, wherein the interior structuring element is configured as a bowl. 26. The handheld tool carrying case as recited in claim 19, wherein the interior structuring element is configured to be processed by an operator in order to adapt the interior structuring element to an object to be placed in the interior structuring element. 27. A system comprising:
a handheld tool carrying case including at least one interior structuring unit; and an interior structuring element configured to be modularly combined with the handheld tool carrying case. 28. A system comprising:
at least one handheld tool battery configured to be inductively charged; a handheld tool; a handheld tool carrying case; and at least one interior structuring element configured to be modularly combined with the handheld tool carrying case. 29. The system as recited in claim 28, wherein at least two different interior structuring elements are provided, and wherein, depending on at least one of the handheld tool and the handheld tool battery to be inserted, one of the at least two interior structuring elements is provided to be placed in the handheld tool carrying case. | A handheld tool carrying case includes at least one interior structuring unit having at least one interior structuring element, which is provided to delimit at least one inductive charge receiving region for at least one handheld tool battery. The interior structuring unit is configured to be combinable in a modular manner.1-15. (canceled) 16. A handheld tool carrying case, comprising:
at least one interior structuring unit having at least one interior structuring element which is provided to delimit at least one inductive charge receiving region for at least one handheld tool battery, wherein the at least one interior structuring unit is configured to be combinable in a modular manner. 17. The handheld tool carrying case as recited in claim 16, wherein the at least one interior structuring element is configured to be installable without tools with regard to the interior structuring unit. 18. The handheld tool carrying case as recited in claim 17, wherein the at least one interior structuring element is configured to be removable from the at least one interior structuring unit without using tools. 19. The handheld tool carrying case as recited in claim 18, wherein the interior structuring unit has at least one base element for positioning the interior structuring element. 20. The handheld tool carrying case as recited in claim 19, wherein the base element includes at least two fixation positions for securing the at least one interior structuring element. 21. The handheld tool carrying case as recited in claim 19, further comprising:
at least one housing part which is integrally formed with the base element. 22. The handheld tool carrying case as recited in claim 19, wherein the base element is formed by at least one space divider element. 23. The handheld tool carrying case as recited in claim 19, wherein the interior structuring element is provided for a plug-in connection. 24. The handheld tool carrying case as recited in claim 19, wherein the interior structuring element is configured as a space divider element. 25. The handheld tool carrying case as recited in claim 19, wherein the interior structuring element is configured as a bowl. 26. The handheld tool carrying case as recited in claim 19, wherein the interior structuring element is configured to be processed by an operator in order to adapt the interior structuring element to an object to be placed in the interior structuring element. 27. A system comprising:
a handheld tool carrying case including at least one interior structuring unit; and an interior structuring element configured to be modularly combined with the handheld tool carrying case. 28. A system comprising:
at least one handheld tool battery configured to be inductively charged; a handheld tool; a handheld tool carrying case; and at least one interior structuring element configured to be modularly combined with the handheld tool carrying case. 29. The system as recited in claim 28, wherein at least two different interior structuring elements are provided, and wherein, depending on at least one of the handheld tool and the handheld tool battery to be inserted, one of the at least two interior structuring elements is provided to be placed in the handheld tool carrying case. | 2,800 |
11,627 | 11,627 | 12,908,478 | 2,828 | A semipolar {20-21} III-nitride based laser diode employing a cavity with one or more etched facet mirrors. The etched facet mirrors provide an ability to arbitrarily control the orientation and dimensions of the cavity or stripe of the laser diode, thereby enabling control of electrical and optical properties of the laser diode. | 1. An optoelectronic device, comprising:
a semipolar III-nitride based heterostructure device employing a cavity with one or more etched facets. 2. The device of claim 1, wherein the etched facets are etched facet mirrors. 3. The device of claim 2, wherein the etched facet mirrors provide an ability to arbitrarily control orientation and dimensions of a cavity or stripe of the laser diode, thereby enabling control of electrical and optical properties of the laser diode. 4. The device of claim 1, wherein the cavity comprises a passive cavity or saturable absorber. 5. The device of claim 1, wherein the device is a laser diode (LD). 6. The device of claim 5, wherein the laser diode is a semipolar {20-21} III-nitride based laser diode. 7. The device of claim 6, wherein the semipolar {20-21} III-nitride based laser diode structure emits light having peak intensity at a wavelength that is green light. 8. The device of claim 1, wherein the device is an (Al,In,Ga)N epitaxial structure grown on a {20-21} substrate, 9. The device of claim 1, wherein the device is an edge-emitting laser, a superluminescent diode (SLD), an optical amplifier, a photonic crystal (PC) laser, or vertical cavity surface emitting laser (VCSEL). 10. A method of fabricating the optoelectronic device of claim 1. 11. A method of fabricating an optoelectronic device, comprising:
fabricating a semipolar III-nitride based heterostructure device employing a cavity with one or more etched facets. 12. The method of claim 11, wherein the etched facets are etched facet mirrors. 13. The method of claim 12, wherein the etched facet mirrors provide an ability to arbitrarily control orientation and dimensions of a cavity or stripe of the laser diode, thereby enabling control of electrical and optical properties of the laser diode. 14. The method of claim 11, wherein the cavity comprises a passive cavity or saturable absorber. 15. The method of claim 11, wherein the device is a laser diode (LD). 16. The method of claim 15, wherein the laser diode is a semipolar {20-21} III-nitride based laser diode. 17. The method of claim 16, wherein the semipolar {20-21} III-nitride based laser diode structure emits light having peak intensity at a wavelength that is green light. 18. The method of claim 11, wherein the device is an (Al,In,Ga)N epitaxial structure grown on a {20-21} substrate, 19. The method of claim 11, wherein the device is an edge-emitting laser, a superluminescent diode (SLD), an optical amplifier, a photonic crystal (PC) laser, or vertical cavity surface emitting laser (VCSEL). | A semipolar {20-21} III-nitride based laser diode employing a cavity with one or more etched facet mirrors. The etched facet mirrors provide an ability to arbitrarily control the orientation and dimensions of the cavity or stripe of the laser diode, thereby enabling control of electrical and optical properties of the laser diode.1. An optoelectronic device, comprising:
a semipolar III-nitride based heterostructure device employing a cavity with one or more etched facets. 2. The device of claim 1, wherein the etched facets are etched facet mirrors. 3. The device of claim 2, wherein the etched facet mirrors provide an ability to arbitrarily control orientation and dimensions of a cavity or stripe of the laser diode, thereby enabling control of electrical and optical properties of the laser diode. 4. The device of claim 1, wherein the cavity comprises a passive cavity or saturable absorber. 5. The device of claim 1, wherein the device is a laser diode (LD). 6. The device of claim 5, wherein the laser diode is a semipolar {20-21} III-nitride based laser diode. 7. The device of claim 6, wherein the semipolar {20-21} III-nitride based laser diode structure emits light having peak intensity at a wavelength that is green light. 8. The device of claim 1, wherein the device is an (Al,In,Ga)N epitaxial structure grown on a {20-21} substrate, 9. The device of claim 1, wherein the device is an edge-emitting laser, a superluminescent diode (SLD), an optical amplifier, a photonic crystal (PC) laser, or vertical cavity surface emitting laser (VCSEL). 10. A method of fabricating the optoelectronic device of claim 1. 11. A method of fabricating an optoelectronic device, comprising:
fabricating a semipolar III-nitride based heterostructure device employing a cavity with one or more etched facets. 12. The method of claim 11, wherein the etched facets are etched facet mirrors. 13. The method of claim 12, wherein the etched facet mirrors provide an ability to arbitrarily control orientation and dimensions of a cavity or stripe of the laser diode, thereby enabling control of electrical and optical properties of the laser diode. 14. The method of claim 11, wherein the cavity comprises a passive cavity or saturable absorber. 15. The method of claim 11, wherein the device is a laser diode (LD). 16. The method of claim 15, wherein the laser diode is a semipolar {20-21} III-nitride based laser diode. 17. The method of claim 16, wherein the semipolar {20-21} III-nitride based laser diode structure emits light having peak intensity at a wavelength that is green light. 18. The method of claim 11, wherein the device is an (Al,In,Ga)N epitaxial structure grown on a {20-21} substrate, 19. The method of claim 11, wherein the device is an edge-emitting laser, a superluminescent diode (SLD), an optical amplifier, a photonic crystal (PC) laser, or vertical cavity surface emitting laser (VCSEL). | 2,800 |
11,628 | 11,628 | 15,565,397 | 2,835 | The invention relates to an electrical enclosure arrangement comprising an electrical enclosure line and a cooling device connected into the line. The electrical enclosure line is formed from multiple electrical enclosures which are connected together. The invention is characterized in that the cooling device suctions hot air out of the electrical enclosures via two opposite faces, each of the faces of the cooling device adjoining a respective electrical enclosure, and blows the air back into the electrical enclosures as cooled air. At least one busbar is guided through a busbar transfer area of the cooling device between the electrical enclosures adjoining the cooling device. | 1.-10. (canceled) 11. An electrical enclosure arrangement with an electrical enclosure line and a cooling device connected into the line, wherein the electrical enclosure line is formed from multiple electrical enclosures lined up on each other, wherein the cooling device via both of two opposite faces, via which it adjoins each of the electrical enclosures, suctions hot air from the electrical enclosures and blows it as cooled air back into the electrical enclosures, characterized in that at least one busbar is directed between the electrical enclosures adjoining on the cooling device, through a busbar transfer area of the cooling device, wherein the busbar transfer area is opened via aligned openings in the two opposite faces to the adjoining electrical enclosures and the at least one busbar is directed through the aligned openings, and wherein a hot air intake opening of the cooling device empties out into the busbar transfer area, so that hot air is directed via the aligned openings from the adjoining electrical enclosures through the busbar transfer area and through the hot air intake opening to the cooling device. 12. The electrical enclosure arrangement according to claim 11, wherein the cooling device has a rack made of four vertical braces and eight horizontal braces, wherein within the installation space enclosed by the rack a cooling device housing is arranged, in which at least one fan and at least one heat transfer device is mounted, which on its upper side, via which the cooling device housing adjoins the busbar transfer area, has a hot air intake opening, and wherein hot air is suctioned from the at least one fan, directed via the hot air suction opening, through the heat transfer device, and blown out via cool air blowoff openings. 13. The electrical enclosure arrangement according to claim 12, wherein the cooling device housing arranged on two lateral elements that are parallel to each other and perpendicular to the upper side has one of the cooling air blowout openings, which empty out in one of the adjoining electrical enclosures. 14. The electrical enclosure arrangement according to claim 12, wherein the busbar transfer area is that section of the installation space of the cooling device rack, which is arranged above the upper side of the cooling device housing. 15. The electrical enclosure arrangement according to claim 12, wherein the adjoining electrical enclosures each have an additional rack made of four vertical braces and eight horizontal braces, with the vertical braces and the lower braces of the three racks being dimensioned to be equally long and with the rack of the cooling device on the two opposite faces of the cooling device being connected with the rack of the particular adjoining electrical enclosure so that the interior spaces of the electrical enclosures are fluidically connected with each other via the busbar transfer area. 16. The electrical enclosure arrangement according to claim 12, wherein directly below the upper side of the cooling device housing an installation space is configured, in which at least one electrical control and regulation device is arranged for operation of the cooling device. 17. The electrical enclosure arrangement according to claim 16, wherein the upper side is configured as a removable and air-permeable covering, especially as a rectangular grid frame, which on each of its four corners is connected with one of the vertical braces of the rack of the cooling device. 18. The electrical enclosure arrangement according to claim 16, wherein the hot air intake opening in the upper side of the cooling device housing is in fluidic connection via the installation space with an air inlet of the heat transfer device, so that the suctioned air flows through the installation space and expels waste heat generated by the electrical control and regulation device. | The invention relates to an electrical enclosure arrangement comprising an electrical enclosure line and a cooling device connected into the line. The electrical enclosure line is formed from multiple electrical enclosures which are connected together. The invention is characterized in that the cooling device suctions hot air out of the electrical enclosures via two opposite faces, each of the faces of the cooling device adjoining a respective electrical enclosure, and blows the air back into the electrical enclosures as cooled air. At least one busbar is guided through a busbar transfer area of the cooling device between the electrical enclosures adjoining the cooling device.1.-10. (canceled) 11. An electrical enclosure arrangement with an electrical enclosure line and a cooling device connected into the line, wherein the electrical enclosure line is formed from multiple electrical enclosures lined up on each other, wherein the cooling device via both of two opposite faces, via which it adjoins each of the electrical enclosures, suctions hot air from the electrical enclosures and blows it as cooled air back into the electrical enclosures, characterized in that at least one busbar is directed between the electrical enclosures adjoining on the cooling device, through a busbar transfer area of the cooling device, wherein the busbar transfer area is opened via aligned openings in the two opposite faces to the adjoining electrical enclosures and the at least one busbar is directed through the aligned openings, and wherein a hot air intake opening of the cooling device empties out into the busbar transfer area, so that hot air is directed via the aligned openings from the adjoining electrical enclosures through the busbar transfer area and through the hot air intake opening to the cooling device. 12. The electrical enclosure arrangement according to claim 11, wherein the cooling device has a rack made of four vertical braces and eight horizontal braces, wherein within the installation space enclosed by the rack a cooling device housing is arranged, in which at least one fan and at least one heat transfer device is mounted, which on its upper side, via which the cooling device housing adjoins the busbar transfer area, has a hot air intake opening, and wherein hot air is suctioned from the at least one fan, directed via the hot air suction opening, through the heat transfer device, and blown out via cool air blowoff openings. 13. The electrical enclosure arrangement according to claim 12, wherein the cooling device housing arranged on two lateral elements that are parallel to each other and perpendicular to the upper side has one of the cooling air blowout openings, which empty out in one of the adjoining electrical enclosures. 14. The electrical enclosure arrangement according to claim 12, wherein the busbar transfer area is that section of the installation space of the cooling device rack, which is arranged above the upper side of the cooling device housing. 15. The electrical enclosure arrangement according to claim 12, wherein the adjoining electrical enclosures each have an additional rack made of four vertical braces and eight horizontal braces, with the vertical braces and the lower braces of the three racks being dimensioned to be equally long and with the rack of the cooling device on the two opposite faces of the cooling device being connected with the rack of the particular adjoining electrical enclosure so that the interior spaces of the electrical enclosures are fluidically connected with each other via the busbar transfer area. 16. The electrical enclosure arrangement according to claim 12, wherein directly below the upper side of the cooling device housing an installation space is configured, in which at least one electrical control and regulation device is arranged for operation of the cooling device. 17. The electrical enclosure arrangement according to claim 16, wherein the upper side is configured as a removable and air-permeable covering, especially as a rectangular grid frame, which on each of its four corners is connected with one of the vertical braces of the rack of the cooling device. 18. The electrical enclosure arrangement according to claim 16, wherein the hot air intake opening in the upper side of the cooling device housing is in fluidic connection via the installation space with an air inlet of the heat transfer device, so that the suctioned air flows through the installation space and expels waste heat generated by the electrical control and regulation device. | 2,800 |
11,629 | 11,629 | 15,336,103 | 2,865 | An ADL monitoring system uses a set of sensors each adapted to respond to an activity and to generate a sensor output signal representative of the detected activity level or type. An activity density map is formed. The activity level or type is compared with a range of activity levels or types represented in a map which characterized a reference spread of activity levels over the same time period as the activity density map. A probability analysis is then used to identify initial anomaly points. For these the initial anomaly points, a test of activity permutations is carried out to find timeslots in the activity density map which may be reordered to remove the initial anomaly points. In this way, anomalies at the level of individual timeslots can be identified, and the permutation approach makes the system robust to changes in the order in which activities are carried out by a subject. | 1. An activity of daily living, ADL, monitoring system for monitoring ADLs of a person within an environment, wherein the ADL monitoring system comprises:
a set of sensors each adapted to respond to an activity and to generate a sensor output signal representative of the activity; a data processing unit adapted to receive the sensor output signals and to process the sensor output signals, to:
generate an activity density map which identifies the level or type of a particular activity within particular timeslots;
generate a reference map which indicates a reference value or range of values of activity levels or types within the particular timeslots;
compare the level or type of a particular activity in the individual timeslots of the activity density map with the reference spread of activity levels or types in the corresponding timeslots of the reference map;
determine a size of correspondence of the level or type of activity arising in each timeslot of the activity density map with the reference spread of activity levels or types in the corresponding timeslots of the reference map to identify initial anomaly points;
for the initial anomaly points, perform a test of activity permutations to find timeslots of the activity density map which may be reordered to remove as many of the initial anomaly points as possible; and
identify the remaining anomaly points as a first anomaly indication. 2. The system as claimed in claim 1, wherein the data processing unit is adapted to perform the test of activity permutations by:
setting a time window centered on an initial anomaly; testing for reordering of timeslots within the time window which remove the initial anomaly; determining whether or not the timeslot reordering creates new anomalies. 3. The system as claimed in claim 2, wherein the data processing unit is adapted to perform the test of activity permutations by recursively testing timeslot swaps within the time window to find the minimum remaining number of anomaly points for the time window. 4. The system as claimed in claim 1, wherein the activity density map and the reference map correspond to a time period of a set of complete days. 5. The system as claimed in claim 1, wherein the data processing unit is adapted to determine the size of correspondence by determining a probability value of the activity level arising in each timeslot of the activity density map based on the reference map, and is adapted to optimize the total probability. 6. The system as claimed in claim 1, wherein the data processing unit is adapted to generate the reference map as a sequence of activity probability distributions for each timeslot. 7. The system as claimed in claim 6, wherein the data processing unit is adapted to:
form a recurrence plot from the sequence of activity probability distributions; and identify the initial anomaly points as missing points from the main diagonal of the recurrence plot. 8. The system as claimed in claim 1, wherein the data processing unit is adapted to:
identify timeslots which throughout the activity density map correspond to initial anomaly points, and provide a second anomaly indication based on the identified timeslots; and obtain an average activity density for the activity density map, and compare the average activity density with the average activity density for the reference map, and provide a third anomaly indication based on the comparison. 9. The system as claimed in claim 1, wherein the set of sensors comprise one or more of: PIR sensors; open/close sensors; power sensors; mat pressure sensors; radar and ultra-sound based sensors; humidity sensors; CO2 sensors; temperature sensors; microphones; cameras; wearable sensors; accelerometers; gyroscopes; heart-rate monitors; respiration sensors; body temperature sensors; skin conductivity sensors; blood pressure sensors; sugar level detectors. 10. A method of monitoring ADLs of a person within an environment, comprising:
receiving sensor output signals from a set of sensors each adapted to respond to an activity and to generate a sensor output signal representative of the detected activity; processing the sensor output signals, to:
generate an activity density map which identifies the level or type of a particular activity within particular timeslots;
generate a reference map which indicates a reference value or range of values of activity levels or types within the particular timeslots;
compare the level or type of a particular activity in the individual timeslots of the activity density map with the reference spread of activity levels or types in the corresponding timeslots of the reference map;
determine a size of correspondence of the level or type of activity arising in each timeslot of the activity density map with the reference spread of activity levels or types in the corresponding timeslots of the reference map to identify initial anomaly points;
for the initial anomaly points, perform a test of activity permutations to find timeslots of the activity density map which may be reordered to remove as many of the initial anomaly points as possible; and
identify the remaining anomaly points as a first anomaly indication. 11. The method as claimed in claim 10, comprising performing the test of activity permutations by:
setting a time window centered on an initial anomaly; testing for reordering of timeslots within the time window which remove the initial anomaly; and determining whether or not the timeslot reordering creates new anomalies. 12. The method as claimed in claim 11, comprising performing the test of activity permutations by recursively testing timeslot swaps within the time window to find the minimum remaining number of anomaly points for the time window. 13. The method as claimed in claim 10, comprising determining the size of correspondence by determining a probability value of the activity level arising in each timeslot of the activity density map based on the reference map, and optimize the total probability. 14. The method as claimed in claim 10, comprising:
generating the reference map as a sequence of activity probability distributions for each timeslot; forming a recurrence plot from the sequence of activity probability distributions; and identifying the initial anomaly points as missing points from the main diagonal of the recurrence plot. 15. A computer program comprising code means which is adapted, when said computer program is run on a computer, to implement the method of claim 10. | An ADL monitoring system uses a set of sensors each adapted to respond to an activity and to generate a sensor output signal representative of the detected activity level or type. An activity density map is formed. The activity level or type is compared with a range of activity levels or types represented in a map which characterized a reference spread of activity levels over the same time period as the activity density map. A probability analysis is then used to identify initial anomaly points. For these the initial anomaly points, a test of activity permutations is carried out to find timeslots in the activity density map which may be reordered to remove the initial anomaly points. In this way, anomalies at the level of individual timeslots can be identified, and the permutation approach makes the system robust to changes in the order in which activities are carried out by a subject.1. An activity of daily living, ADL, monitoring system for monitoring ADLs of a person within an environment, wherein the ADL monitoring system comprises:
a set of sensors each adapted to respond to an activity and to generate a sensor output signal representative of the activity; a data processing unit adapted to receive the sensor output signals and to process the sensor output signals, to:
generate an activity density map which identifies the level or type of a particular activity within particular timeslots;
generate a reference map which indicates a reference value or range of values of activity levels or types within the particular timeslots;
compare the level or type of a particular activity in the individual timeslots of the activity density map with the reference spread of activity levels or types in the corresponding timeslots of the reference map;
determine a size of correspondence of the level or type of activity arising in each timeslot of the activity density map with the reference spread of activity levels or types in the corresponding timeslots of the reference map to identify initial anomaly points;
for the initial anomaly points, perform a test of activity permutations to find timeslots of the activity density map which may be reordered to remove as many of the initial anomaly points as possible; and
identify the remaining anomaly points as a first anomaly indication. 2. The system as claimed in claim 1, wherein the data processing unit is adapted to perform the test of activity permutations by:
setting a time window centered on an initial anomaly; testing for reordering of timeslots within the time window which remove the initial anomaly; determining whether or not the timeslot reordering creates new anomalies. 3. The system as claimed in claim 2, wherein the data processing unit is adapted to perform the test of activity permutations by recursively testing timeslot swaps within the time window to find the minimum remaining number of anomaly points for the time window. 4. The system as claimed in claim 1, wherein the activity density map and the reference map correspond to a time period of a set of complete days. 5. The system as claimed in claim 1, wherein the data processing unit is adapted to determine the size of correspondence by determining a probability value of the activity level arising in each timeslot of the activity density map based on the reference map, and is adapted to optimize the total probability. 6. The system as claimed in claim 1, wherein the data processing unit is adapted to generate the reference map as a sequence of activity probability distributions for each timeslot. 7. The system as claimed in claim 6, wherein the data processing unit is adapted to:
form a recurrence plot from the sequence of activity probability distributions; and identify the initial anomaly points as missing points from the main diagonal of the recurrence plot. 8. The system as claimed in claim 1, wherein the data processing unit is adapted to:
identify timeslots which throughout the activity density map correspond to initial anomaly points, and provide a second anomaly indication based on the identified timeslots; and obtain an average activity density for the activity density map, and compare the average activity density with the average activity density for the reference map, and provide a third anomaly indication based on the comparison. 9. The system as claimed in claim 1, wherein the set of sensors comprise one or more of: PIR sensors; open/close sensors; power sensors; mat pressure sensors; radar and ultra-sound based sensors; humidity sensors; CO2 sensors; temperature sensors; microphones; cameras; wearable sensors; accelerometers; gyroscopes; heart-rate monitors; respiration sensors; body temperature sensors; skin conductivity sensors; blood pressure sensors; sugar level detectors. 10. A method of monitoring ADLs of a person within an environment, comprising:
receiving sensor output signals from a set of sensors each adapted to respond to an activity and to generate a sensor output signal representative of the detected activity; processing the sensor output signals, to:
generate an activity density map which identifies the level or type of a particular activity within particular timeslots;
generate a reference map which indicates a reference value or range of values of activity levels or types within the particular timeslots;
compare the level or type of a particular activity in the individual timeslots of the activity density map with the reference spread of activity levels or types in the corresponding timeslots of the reference map;
determine a size of correspondence of the level or type of activity arising in each timeslot of the activity density map with the reference spread of activity levels or types in the corresponding timeslots of the reference map to identify initial anomaly points;
for the initial anomaly points, perform a test of activity permutations to find timeslots of the activity density map which may be reordered to remove as many of the initial anomaly points as possible; and
identify the remaining anomaly points as a first anomaly indication. 11. The method as claimed in claim 10, comprising performing the test of activity permutations by:
setting a time window centered on an initial anomaly; testing for reordering of timeslots within the time window which remove the initial anomaly; and determining whether or not the timeslot reordering creates new anomalies. 12. The method as claimed in claim 11, comprising performing the test of activity permutations by recursively testing timeslot swaps within the time window to find the minimum remaining number of anomaly points for the time window. 13. The method as claimed in claim 10, comprising determining the size of correspondence by determining a probability value of the activity level arising in each timeslot of the activity density map based on the reference map, and optimize the total probability. 14. The method as claimed in claim 10, comprising:
generating the reference map as a sequence of activity probability distributions for each timeslot; forming a recurrence plot from the sequence of activity probability distributions; and identifying the initial anomaly points as missing points from the main diagonal of the recurrence plot. 15. A computer program comprising code means which is adapted, when said computer program is run on a computer, to implement the method of claim 10. | 2,800 |
11,630 | 11,630 | 14,795,405 | 2,828 | A nanolaser includes a silicon substrate and a III-V layer formed on the silicon substrate having a defect density due to differences in materials. A laser region is formed on or in the III-V layer, the laser region having a size based upon the defect density. | 1. A nanolaser, comprising:
a silicon substrate; at least one III-V layer formed on the silicon substrate having a defect density due to differences between the III-V and silicon materials; and a laser device formed on or in the at least one III-V layer, the laser device having a size based upon the defect density. 2. The nanolaser as recited in claim 1, wherein the at least one III-V layer includes one or more buffer layers. 3. The nanolaser as recited in claim 1, wherein the at least one III-V layer includes a line formed on a buffer layer and a multiple quantum well structure is formed in the line. 4. The nanolaser as recited in claim 1, wherein the laser device occupies an area less than a defect density area. 5. The nanolaser as recited in claim 1, wherein a size of the laser device is selected to provide at least 94% of lasers that are defect free. 6. The nanolaser as recited in claim 1, wherein the size of the laser device is selected to provide at least 99.9% of lasers that are defect free. 7. The nanolaser as recited in claim 1, wherein the size is less than about 1/16 of a squared micron. 8. The nanolaser as recited in claim 1, wherein the at least one III-V layer includes a blanket deposited layer on the silicon substrate. 9. A nanolaser, comprising:
a silicon substrate; a buffer layer including GaAs formed on the silicon substrate and having a defect density due to differences between the III-V and silicon materials; and one or more III-V layers formed on the buffer layer and configured to support a laser device formed on or in the one or more III-V layers, the laser device includes a multiple quantum well structure and has a size based upon the defect density. 10. The nanolaser as recited in claim 9, wherein the one or more III-V layers includes additional buffer layers. 11. The nanolaser as recited in claim 9, wherein the buffer layer includes one of AlGaAs or InGaAsP and the one or more III-V layers includes GaAs or InP, respectively. 12. The nanolaser as recited in claim 9, wherein the laser device occupies an area less than a defect density area. 13. The nanolaser as recited in claim 9, wherein the size of the laser device is selected to provide at least 94% of lasers that are defect free. 14. The nanolaser as recited in claim 9, wherein the size of the laser device is selected to provide at least 99.9% of lasers that are defect free. 15. The nanolaser as recited in claim 9, wherein the size is less than about 1/16 of a squared micron. 16. The nanolaser as recited in claim 9, wherein the buffer layer includes a blanket deposited layer on the silicon substrate. 17. A method for fabricating a nanolaser, comprising:
forming a III-V material directly on a silicon substrate; estimating a defect density due to differences in materials between the III-V material and the silicon substrate; and sizing a laser device to be formed on or in the III-V material wherein a size of the laser device is based upon the defect density. 18. The method as recited in claim 17, wherein sizing the laser device includes selecting an area less than a defect density area for the laser device. 19. The method as recited in claim 17, wherein sizing the laser device includes selecting a size to provide at least 99.9% of lasers that are defect free. 20. The method as recited in claim 17, further comprising reducing defect density to permit larger laser device. | A nanolaser includes a silicon substrate and a III-V layer formed on the silicon substrate having a defect density due to differences in materials. A laser region is formed on or in the III-V layer, the laser region having a size based upon the defect density.1. A nanolaser, comprising:
a silicon substrate; at least one III-V layer formed on the silicon substrate having a defect density due to differences between the III-V and silicon materials; and a laser device formed on or in the at least one III-V layer, the laser device having a size based upon the defect density. 2. The nanolaser as recited in claim 1, wherein the at least one III-V layer includes one or more buffer layers. 3. The nanolaser as recited in claim 1, wherein the at least one III-V layer includes a line formed on a buffer layer and a multiple quantum well structure is formed in the line. 4. The nanolaser as recited in claim 1, wherein the laser device occupies an area less than a defect density area. 5. The nanolaser as recited in claim 1, wherein a size of the laser device is selected to provide at least 94% of lasers that are defect free. 6. The nanolaser as recited in claim 1, wherein the size of the laser device is selected to provide at least 99.9% of lasers that are defect free. 7. The nanolaser as recited in claim 1, wherein the size is less than about 1/16 of a squared micron. 8. The nanolaser as recited in claim 1, wherein the at least one III-V layer includes a blanket deposited layer on the silicon substrate. 9. A nanolaser, comprising:
a silicon substrate; a buffer layer including GaAs formed on the silicon substrate and having a defect density due to differences between the III-V and silicon materials; and one or more III-V layers formed on the buffer layer and configured to support a laser device formed on or in the one or more III-V layers, the laser device includes a multiple quantum well structure and has a size based upon the defect density. 10. The nanolaser as recited in claim 9, wherein the one or more III-V layers includes additional buffer layers. 11. The nanolaser as recited in claim 9, wherein the buffer layer includes one of AlGaAs or InGaAsP and the one or more III-V layers includes GaAs or InP, respectively. 12. The nanolaser as recited in claim 9, wherein the laser device occupies an area less than a defect density area. 13. The nanolaser as recited in claim 9, wherein the size of the laser device is selected to provide at least 94% of lasers that are defect free. 14. The nanolaser as recited in claim 9, wherein the size of the laser device is selected to provide at least 99.9% of lasers that are defect free. 15. The nanolaser as recited in claim 9, wherein the size is less than about 1/16 of a squared micron. 16. The nanolaser as recited in claim 9, wherein the buffer layer includes a blanket deposited layer on the silicon substrate. 17. A method for fabricating a nanolaser, comprising:
forming a III-V material directly on a silicon substrate; estimating a defect density due to differences in materials between the III-V material and the silicon substrate; and sizing a laser device to be formed on or in the III-V material wherein a size of the laser device is based upon the defect density. 18. The method as recited in claim 17, wherein sizing the laser device includes selecting an area less than a defect density area for the laser device. 19. The method as recited in claim 17, wherein sizing the laser device includes selecting a size to provide at least 99.9% of lasers that are defect free. 20. The method as recited in claim 17, further comprising reducing defect density to permit larger laser device. | 2,800 |
11,631 | 11,631 | 15,630,210 | 2,874 | A display device component includes an optical waveguide having a surface; a first material formed on a portion of the surface of the optical waveguide; and a second material formed on a portion of the first material. The first material has light scattering properties. | 1. A display device component comprising:
an optical waveguide having a first surface and a second surface; a first marking material formed on a portion of said first surface of said optical waveguide; a second marking material formed on a portion of said first marking material; and a third marking material formed on a portion of said second surface of said optical waveguide; said third marking material having a first surface adjacent to said second surface of said optical waveguide and a second surface away from said second surface of said optical waveguide; said second surface of said third marking material being non-smooth to frustrate a portion of light being internally reflected within said optical waveguide; said second marking material having light scattering properties. 2. (canceled) 3. The display device component as claimed in claim 1, wherein said second marking material is a white marking material. 4. The display device component as claimed in claim 3, wherein said white marking material is ink. 5. The display device component as claimed in claim 3, wherein said white marking material is toner. 6. The display device component as claimed in claim 1, wherein said first marking material is a non-white colored marking material and said third marking material is a non-white colored marking material. 7. The display device component as claimed in claim 6, wherein said non-white colored marking material is ink. 8. The display device component as claimed in claim 6, wherein non-white colored marking material is toner. 9. A display device component comprising:
an optical waveguide having a first surface and a second surface; a first marking material formed on a portion of said first surface of said optical waveguide; a second marking material formed on a portion of said first marking material; and a third marking material formed on a portion of said second surface of said optical waveguide; said third marking material having a first surface adjacent to said second surface of said optical waveguide and a second surface away from said second surface of said optical waveguide; said second surface of said third marking material being non-smooth to frustrate a portion of light being internally reflected within said optical waveguide; said second marking material having light scattering particles embedded therein. 10. (canceled) 11. The display device component as claimed in claim 9, wherein said second marking material is a white marking material. 12. The display device component as claimed in claim 11, wherein said white marking material is ink. 13. The display device component as claimed in claim 11, wherein said white marking material is toner. 14. The display device component as claimed in claim 9, wherein said first marking material is a non-white colored marking material and said third marking material is a non-white colored marking material. 15. The display device component as claimed in claim 14, wherein said non-white colored marking material is ink. 16. The display device component as claimed in claim 14, wherein non-white colored marking material is toner. 17. A display device component comprising:
a plurality of optical waveguides, each optical waveguide having a front surface and a back surface; each optical waveguide having formed thereon a first marking material formed on a portion of said front surface of each optical waveguide, said first marking material having a first surface adjacent to said front surface of said optical waveguide and a second surface away from said front surface of said optical waveguide, said second surface of said first marking material being non-smooth to frustrate a portion of light being internally reflected within said optical waveguide; each optical waveguide having formed thereon a second marking material formed on a portion of said back surface of each optical waveguide; each optical waveguide having formed on said second marking material a third marking material, said third marking material having light scattering properties to frustrate a portion of totally internally reflected light within said optical waveguide. 18. (canceled) 19. The display device component as claimed in claim 17, wherein said third marking material is a white marking material. 20. The display device component as claimed in claim 19, wherein said white marking material is ink. | A display device component includes an optical waveguide having a surface; a first material formed on a portion of the surface of the optical waveguide; and a second material formed on a portion of the first material. The first material has light scattering properties.1. A display device component comprising:
an optical waveguide having a first surface and a second surface; a first marking material formed on a portion of said first surface of said optical waveguide; a second marking material formed on a portion of said first marking material; and a third marking material formed on a portion of said second surface of said optical waveguide; said third marking material having a first surface adjacent to said second surface of said optical waveguide and a second surface away from said second surface of said optical waveguide; said second surface of said third marking material being non-smooth to frustrate a portion of light being internally reflected within said optical waveguide; said second marking material having light scattering properties. 2. (canceled) 3. The display device component as claimed in claim 1, wherein said second marking material is a white marking material. 4. The display device component as claimed in claim 3, wherein said white marking material is ink. 5. The display device component as claimed in claim 3, wherein said white marking material is toner. 6. The display device component as claimed in claim 1, wherein said first marking material is a non-white colored marking material and said third marking material is a non-white colored marking material. 7. The display device component as claimed in claim 6, wherein said non-white colored marking material is ink. 8. The display device component as claimed in claim 6, wherein non-white colored marking material is toner. 9. A display device component comprising:
an optical waveguide having a first surface and a second surface; a first marking material formed on a portion of said first surface of said optical waveguide; a second marking material formed on a portion of said first marking material; and a third marking material formed on a portion of said second surface of said optical waveguide; said third marking material having a first surface adjacent to said second surface of said optical waveguide and a second surface away from said second surface of said optical waveguide; said second surface of said third marking material being non-smooth to frustrate a portion of light being internally reflected within said optical waveguide; said second marking material having light scattering particles embedded therein. 10. (canceled) 11. The display device component as claimed in claim 9, wherein said second marking material is a white marking material. 12. The display device component as claimed in claim 11, wherein said white marking material is ink. 13. The display device component as claimed in claim 11, wherein said white marking material is toner. 14. The display device component as claimed in claim 9, wherein said first marking material is a non-white colored marking material and said third marking material is a non-white colored marking material. 15. The display device component as claimed in claim 14, wherein said non-white colored marking material is ink. 16. The display device component as claimed in claim 14, wherein non-white colored marking material is toner. 17. A display device component comprising:
a plurality of optical waveguides, each optical waveguide having a front surface and a back surface; each optical waveguide having formed thereon a first marking material formed on a portion of said front surface of each optical waveguide, said first marking material having a first surface adjacent to said front surface of said optical waveguide and a second surface away from said front surface of said optical waveguide, said second surface of said first marking material being non-smooth to frustrate a portion of light being internally reflected within said optical waveguide; each optical waveguide having formed thereon a second marking material formed on a portion of said back surface of each optical waveguide; each optical waveguide having formed on said second marking material a third marking material, said third marking material having light scattering properties to frustrate a portion of totally internally reflected light within said optical waveguide. 18. (canceled) 19. The display device component as claimed in claim 17, wherein said third marking material is a white marking material. 20. The display device component as claimed in claim 19, wherein said white marking material is ink. | 2,800 |
11,632 | 11,632 | 15,376,422 | 2,837 | A four-pole stator assembly including a bobbin assembly; and two c-shaped stator cores, each c-shaped stator core comprising a back and first and second pole arms extending from the back. The bobbin assembly includes first and second bobbin portions, each bobbin portion comprising two hollow bobbin arms, each bobbin arm defining a slot for receiving a pole arm, and a winding wound around each bobbin arm. The c-shaped stator cores are arranged such that each c-shaped stator core bridges across both bobbin portions with one of the first and second pole arms extending through a slot in the first bobbin portion, and the other of the first and second pole arms extending through a slot in the second bobbin portion, the pole arms being fixed in the slots by adhesive. | 1. A four-pole stator assembly comprising:
a bobbin assembly; and two c-shaped stator cores, each c-shaped stator core comprising a back and first and second pole arms extending from the back; wherein the bobbin assembly comprises first and second bobbin portions, each bobbin portion comprising two hollow bobbin arms, each bobbin arm defining a slot for receiving a pole arm, and a winding wound around each bobbin arm, and wherein the c-shaped stator cores are arranged such that each c-shaped stator core bridges across both bobbin portions with one of the first and second pole arms extending through a slot in the first bobbin portion, and the other of the first and second pole arms extending through a slot in the second bobbin portion, the pole arms being fixed in the slots by adhesive. 2. The four-pole stator assembly of claim 1, wherein each of the first and second bobbin portions comprises a semi-cylindrical recess. 3. The four-pole stator assembly of claim 2, wherein the semi-cylindrical recess comprises two pole face windows, each pole face window representing an interior termination of each of the slots through the respective bobbin portion. 4. The four-pole stator assembly of claim 2, wherein the semi-cylindrical recess in each bobbin portion forms part of a cylindrical bore through the bobbin assembly. 5. The four-pole stator assembly of claim 1, wherein each pole arm of each c-shaped stator core comprises a pole face at an opposite end of the pole arm to the back. 6. The four-pole stator assembly of claim 5, wherein each pole arm comprises a groove for containing adhesive positioned proximate to the pole face. 7. The four-pole stator assembly of claim 5, wherein each of the first and second bobbin portions comprises a semi-cylindrical recess, the semi-cylindrical recess of each bobbin portion comprising two pole face windows, each pole face window representing an interior termination of each of the slots through the respective bobbin portion, and each pole face is located at a pole face window so as to form part of the wall of the semi-cylindrical recess. 8. The four-pole stator assembly of claim 1, wherein each bobbin arm comprises an outer flange. 9. The four-pole stator assembly of claim 1, wherein the bobbin assembly comprises one or more fixing recesses. 10. The four-pole stator assembly of claim 9, wherein each bobbin portion of the bobbin assembly comprises a fixing recess. 11. An electric motor comprising a rotor assembly, a frame, and a stator assembly, the four-pole stator assembly comprising:
a bobbin assembly; and two c-shaped stator cores, each c-shaped stator core comprising a back and first and second pole arms extending from the back; wherein the bobbin assembly comprises first and second bobbin portions, each bobbin portion comprising two hollow bobbin arms, each bobbin arm defining a slot for receiving a pole arm, and a winding wound around each bobbin arm, and wherein the c-shaped stator cores are arranged such that each c-shaped stator core bridges across both bobbin portions with one of the first and second pole arms extending through a slot in the first bobbin portion, and the other of the first and second pole arms extending through a slot in the second bobbin portion, the pole arms being fixed in the slots by adhesive. 12. The electric motor of claim 11, wherein the rotor assembly comprises a permanent magnet fixed to a rotatable shaft, and the rotor assembly is positioned such that the permanent magnet is located between the c-shaped stator cores. 13. The electric motor of claim 12, wherein the permanent magnet is a four pole magnet. 14. The electric motor of any claim 11, wherein the bobbin assembly is fixed to the frame, the frame comprising one or more lugs that fit into one or more fixing recesses in the bobbin assembly. 15. The electric motor of claim 14, wherein the one or more lugs are fixed in the one or more fixing recesses by adhesive. 16. The electric motor of claim 11, wherein each of the first and second bobbin portions comprises a semi-cylindrical recess. 17. The electric motor of claim 16, wherein the semi-cylindrical recess comprises two pole face windows, each pole face window representing an interior termination of each of the slots through the respective bobbin portion. 18. The electric motor of claim 16, wherein the semi-cylindrical recess in each bobbin portion forms part of a cylindrical bore through the bobbin assembly. 19. The electric motor of claim 11, wherein each pole arm of each c-shaped stator core comprises a pole face at an opposite end of the pole arm to the back. 20. The electric motor of claim 19, wherein each pole arm comprises a groove for containing adhesive positioned proximate to the pole face. 21. The electric motor of claim 19, wherein each of the first and second bobbin portions comprises a semi-cylindrical recess, the semi-cylindrical recess of each bobbin portion comprising two pole face windows, each pole face window representing an interior termination of each of the slots through the respective bobbin portion, and each pole face is located at a pole face window so as to form part of the wall of the semi-cylindrical recess. | A four-pole stator assembly including a bobbin assembly; and two c-shaped stator cores, each c-shaped stator core comprising a back and first and second pole arms extending from the back. The bobbin assembly includes first and second bobbin portions, each bobbin portion comprising two hollow bobbin arms, each bobbin arm defining a slot for receiving a pole arm, and a winding wound around each bobbin arm. The c-shaped stator cores are arranged such that each c-shaped stator core bridges across both bobbin portions with one of the first and second pole arms extending through a slot in the first bobbin portion, and the other of the first and second pole arms extending through a slot in the second bobbin portion, the pole arms being fixed in the slots by adhesive.1. A four-pole stator assembly comprising:
a bobbin assembly; and two c-shaped stator cores, each c-shaped stator core comprising a back and first and second pole arms extending from the back; wherein the bobbin assembly comprises first and second bobbin portions, each bobbin portion comprising two hollow bobbin arms, each bobbin arm defining a slot for receiving a pole arm, and a winding wound around each bobbin arm, and wherein the c-shaped stator cores are arranged such that each c-shaped stator core bridges across both bobbin portions with one of the first and second pole arms extending through a slot in the first bobbin portion, and the other of the first and second pole arms extending through a slot in the second bobbin portion, the pole arms being fixed in the slots by adhesive. 2. The four-pole stator assembly of claim 1, wherein each of the first and second bobbin portions comprises a semi-cylindrical recess. 3. The four-pole stator assembly of claim 2, wherein the semi-cylindrical recess comprises two pole face windows, each pole face window representing an interior termination of each of the slots through the respective bobbin portion. 4. The four-pole stator assembly of claim 2, wherein the semi-cylindrical recess in each bobbin portion forms part of a cylindrical bore through the bobbin assembly. 5. The four-pole stator assembly of claim 1, wherein each pole arm of each c-shaped stator core comprises a pole face at an opposite end of the pole arm to the back. 6. The four-pole stator assembly of claim 5, wherein each pole arm comprises a groove for containing adhesive positioned proximate to the pole face. 7. The four-pole stator assembly of claim 5, wherein each of the first and second bobbin portions comprises a semi-cylindrical recess, the semi-cylindrical recess of each bobbin portion comprising two pole face windows, each pole face window representing an interior termination of each of the slots through the respective bobbin portion, and each pole face is located at a pole face window so as to form part of the wall of the semi-cylindrical recess. 8. The four-pole stator assembly of claim 1, wherein each bobbin arm comprises an outer flange. 9. The four-pole stator assembly of claim 1, wherein the bobbin assembly comprises one or more fixing recesses. 10. The four-pole stator assembly of claim 9, wherein each bobbin portion of the bobbin assembly comprises a fixing recess. 11. An electric motor comprising a rotor assembly, a frame, and a stator assembly, the four-pole stator assembly comprising:
a bobbin assembly; and two c-shaped stator cores, each c-shaped stator core comprising a back and first and second pole arms extending from the back; wherein the bobbin assembly comprises first and second bobbin portions, each bobbin portion comprising two hollow bobbin arms, each bobbin arm defining a slot for receiving a pole arm, and a winding wound around each bobbin arm, and wherein the c-shaped stator cores are arranged such that each c-shaped stator core bridges across both bobbin portions with one of the first and second pole arms extending through a slot in the first bobbin portion, and the other of the first and second pole arms extending through a slot in the second bobbin portion, the pole arms being fixed in the slots by adhesive. 12. The electric motor of claim 11, wherein the rotor assembly comprises a permanent magnet fixed to a rotatable shaft, and the rotor assembly is positioned such that the permanent magnet is located between the c-shaped stator cores. 13. The electric motor of claim 12, wherein the permanent magnet is a four pole magnet. 14. The electric motor of any claim 11, wherein the bobbin assembly is fixed to the frame, the frame comprising one or more lugs that fit into one or more fixing recesses in the bobbin assembly. 15. The electric motor of claim 14, wherein the one or more lugs are fixed in the one or more fixing recesses by adhesive. 16. The electric motor of claim 11, wherein each of the first and second bobbin portions comprises a semi-cylindrical recess. 17. The electric motor of claim 16, wherein the semi-cylindrical recess comprises two pole face windows, each pole face window representing an interior termination of each of the slots through the respective bobbin portion. 18. The electric motor of claim 16, wherein the semi-cylindrical recess in each bobbin portion forms part of a cylindrical bore through the bobbin assembly. 19. The electric motor of claim 11, wherein each pole arm of each c-shaped stator core comprises a pole face at an opposite end of the pole arm to the back. 20. The electric motor of claim 19, wherein each pole arm comprises a groove for containing adhesive positioned proximate to the pole face. 21. The electric motor of claim 19, wherein each of the first and second bobbin portions comprises a semi-cylindrical recess, the semi-cylindrical recess of each bobbin portion comprising two pole face windows, each pole face window representing an interior termination of each of the slots through the respective bobbin portion, and each pole face is located at a pole face window so as to form part of the wall of the semi-cylindrical recess. | 2,800 |
11,633 | 11,633 | 14,749,161 | 2,825 | A memory device that includes a phase change material. The phase change material is programmable to a metastable set state and metastable reset state. Furthermore, the phase change material includes an initial state with an initial electrical resistance between the set electrical resistance and the reset electrical resistance. The initial state is at a lower potential energy than the set state and the reset state. Thus, the electrical resistance of the phase change material programmed to the set state or the reset state drifts toward the initial electrical resistance over time. The memory device also includes a first electrode electrically coupled to a first area of the phase change material, and a second electrode electrically coupled to a second area of the phase change material. | 1. A memory device comprising:
a phase change material having an electrical resistance and programmable to a set state having a set electrical resistance and reset state having a reset electrical resistance at least a factor of 10 greater than the set electrical resistance, the phase change material including an initial state having an initial electrical resistance between the set electrical resistance and the reset electrical resistance, the initial state is at a lower potential energy than the set state and the reset state such that the electrical resistance of the phase change material programmed to the set state or the reset state drifts toward the initial electrical resistance over time; a first electrode electrically coupled to a first area of the phase change material; and a second electrode electrically coupled to a second area of the phase change material. 2. The memory device of claim 1, wherein
the phase change material includes GexSbyTez, where a Ge atomic concentration x is within a range from 30% to 70%, a Sb atomic concentration y is within a range from 10% to 30%, and a Te atomic concentration z is within a range from 20% to 50%. 3. The memory device of claim 2, wherein the Ge atomic concentration x is greater than the Sb atomic concentration y. 4. The memory device of claim 1, wherein the phase change material includes a Ge atomic concentration of 48.1%, a Sb atomic concentration of 14.9%, a Te atomic concentration of 27.7%, and an N atomic concentration of 9.3%. 5. The memory device of claim 1, wherein the phase change material is doped with nitrogen. 6. The memory device of claim 1, wherein the phase change material is doped with carbon. 7. The memory device of claim 1, wherein the phase change material is doped with silicon. 8. The memory device of claim 1, wherein the phase change material is doped with oxygen. 9. The memory device of claim 1, wherein the set electrical resistance is within a range of 10 kΩ) and 100 kΩ, the reset electrical resistance is within a range of 3 MΩ) and 100 MΩ, and the initial electrical resistance is within a range of 200 kΩ and 2 MΩ. 10. The memory device of claim 1, further comprising a programmer circuit configured to apply a program voltage or a program current between the first electrode and the second electrode, the program voltage or the program current being inversely proportional to a drift speed of the phase change material toward the initial electrical resistance over time. 11. A memory device comprising:
a phase change material having an electrical resistance and programmable to a set state having a set electrical resistance and reset state having a reset electrical resistance at least a factor of 10 greater than the set electrical resistance, the phase change material including an initial state having an initial electrical resistance between the set electrical resistance and the reset electrical resistance, the initial state is at a lower potential energy than the set state and the reset state; a first electrode electrically coupled to a first area of the phase change material; and a second electrode electrically coupled to a second area of the phase change material. 12. The memory device of claim 11, wherein the phase change material includes GexSbyTez where a Ge atomic concentration x is within a range from 30% to 70%, a Sb atomic concentration y is within a range from 10% to 30%, and a Te atomic concentration z is within a range from 20% to 50%; and wherein the Ge atomic concentration x is greater than the Sb atomic concentration y and the Te atomic concentration z. 13. The memory device of claim 12, wherein the Ge atomic concentration x is greater than the Sb atomic concentration y. 14. The memory device of claim 11, wherein the phase change material includes a Ge atomic concentration of 48.1%, a Sb atomic concentration of 14.9%, a Te atomic concentration of 27.7%, and an N atomic concentration of 9.3%. 15. The memory device of claim 11, wherein the phase change material is doped with nitrogen. 16. The memory device of claim 11, wherein the phase change material is doped with carbon. 17. The memory device of claim 11, wherein the phase change material is doped with silicon. 18. The memory device of claim 11, wherein the electrical resistance of the phase change material programmed to the set state drifts toward the initial electrical resistance and the electrical resistance of the phase change material programmed to the reset state drifts toward the initial electrical resistance. 19. The memory device of claim 11, wherein the set electrical resistance is within a range of 10 kΩ) and 100 kΩ), the reset electrical resistance is within a range of 3 MΩ) and 100 MΩ, and the initial electrical resistance is within a range of 200 kΩ and 2 MΩ. 20. The memory device of claim 2, wherein the Ge atomic concentration x is greater than the Sb atomic concentration y and the Te atomic concentration z. | A memory device that includes a phase change material. The phase change material is programmable to a metastable set state and metastable reset state. Furthermore, the phase change material includes an initial state with an initial electrical resistance between the set electrical resistance and the reset electrical resistance. The initial state is at a lower potential energy than the set state and the reset state. Thus, the electrical resistance of the phase change material programmed to the set state or the reset state drifts toward the initial electrical resistance over time. The memory device also includes a first electrode electrically coupled to a first area of the phase change material, and a second electrode electrically coupled to a second area of the phase change material.1. A memory device comprising:
a phase change material having an electrical resistance and programmable to a set state having a set electrical resistance and reset state having a reset electrical resistance at least a factor of 10 greater than the set electrical resistance, the phase change material including an initial state having an initial electrical resistance between the set electrical resistance and the reset electrical resistance, the initial state is at a lower potential energy than the set state and the reset state such that the electrical resistance of the phase change material programmed to the set state or the reset state drifts toward the initial electrical resistance over time; a first electrode electrically coupled to a first area of the phase change material; and a second electrode electrically coupled to a second area of the phase change material. 2. The memory device of claim 1, wherein
the phase change material includes GexSbyTez, where a Ge atomic concentration x is within a range from 30% to 70%, a Sb atomic concentration y is within a range from 10% to 30%, and a Te atomic concentration z is within a range from 20% to 50%. 3. The memory device of claim 2, wherein the Ge atomic concentration x is greater than the Sb atomic concentration y. 4. The memory device of claim 1, wherein the phase change material includes a Ge atomic concentration of 48.1%, a Sb atomic concentration of 14.9%, a Te atomic concentration of 27.7%, and an N atomic concentration of 9.3%. 5. The memory device of claim 1, wherein the phase change material is doped with nitrogen. 6. The memory device of claim 1, wherein the phase change material is doped with carbon. 7. The memory device of claim 1, wherein the phase change material is doped with silicon. 8. The memory device of claim 1, wherein the phase change material is doped with oxygen. 9. The memory device of claim 1, wherein the set electrical resistance is within a range of 10 kΩ) and 100 kΩ, the reset electrical resistance is within a range of 3 MΩ) and 100 MΩ, and the initial electrical resistance is within a range of 200 kΩ and 2 MΩ. 10. The memory device of claim 1, further comprising a programmer circuit configured to apply a program voltage or a program current between the first electrode and the second electrode, the program voltage or the program current being inversely proportional to a drift speed of the phase change material toward the initial electrical resistance over time. 11. A memory device comprising:
a phase change material having an electrical resistance and programmable to a set state having a set electrical resistance and reset state having a reset electrical resistance at least a factor of 10 greater than the set electrical resistance, the phase change material including an initial state having an initial electrical resistance between the set electrical resistance and the reset electrical resistance, the initial state is at a lower potential energy than the set state and the reset state; a first electrode electrically coupled to a first area of the phase change material; and a second electrode electrically coupled to a second area of the phase change material. 12. The memory device of claim 11, wherein the phase change material includes GexSbyTez where a Ge atomic concentration x is within a range from 30% to 70%, a Sb atomic concentration y is within a range from 10% to 30%, and a Te atomic concentration z is within a range from 20% to 50%; and wherein the Ge atomic concentration x is greater than the Sb atomic concentration y and the Te atomic concentration z. 13. The memory device of claim 12, wherein the Ge atomic concentration x is greater than the Sb atomic concentration y. 14. The memory device of claim 11, wherein the phase change material includes a Ge atomic concentration of 48.1%, a Sb atomic concentration of 14.9%, a Te atomic concentration of 27.7%, and an N atomic concentration of 9.3%. 15. The memory device of claim 11, wherein the phase change material is doped with nitrogen. 16. The memory device of claim 11, wherein the phase change material is doped with carbon. 17. The memory device of claim 11, wherein the phase change material is doped with silicon. 18. The memory device of claim 11, wherein the electrical resistance of the phase change material programmed to the set state drifts toward the initial electrical resistance and the electrical resistance of the phase change material programmed to the reset state drifts toward the initial electrical resistance. 19. The memory device of claim 11, wherein the set electrical resistance is within a range of 10 kΩ) and 100 kΩ), the reset electrical resistance is within a range of 3 MΩ) and 100 MΩ, and the initial electrical resistance is within a range of 200 kΩ and 2 MΩ. 20. The memory device of claim 2, wherein the Ge atomic concentration x is greater than the Sb atomic concentration y and the Te atomic concentration z. | 2,800 |
11,634 | 11,634 | 15,596,235 | 2,896 | A hybrid vehicle includes an isolation switch disposed between a first bus that is electrically coupled to a starter for an engine and a second bus that is electrically coupled to a power converter and accessory loads. The hybrid vehicle includes a controller programmed to normally command the switch closed, and, in response to expiration of a predetermined time interval without starting the engine, command the switch to open for a predetermined duration to perform diagnostics on the isolation switch. | 1. A hybrid vehicle comprising:
a switch disposed between a first bus electrically coupled to a starter for an engine and a second bus electrically coupled to a power converter; and a controller programmed to command the switch to close, and, in response to a voltage of the second bus exceeding a voltage threshold after initiating an ignition cycle that begins without starting the engine, command the switch to open for a predetermined duration. 2. The hybrid vehicle of claim 1 wherein the voltage threshold is indicative of the power converter operating to transfer power from a high-voltage bus to the second bus. 3. The hybrid vehicle of claim 1 wherein the voltage threshold is a value expected to be a predetermined amount greater than a nominal battery voltage of a battery electrically coupled to the first bus. 4. The hybrid vehicle of claim 1 wherein the controller is further programmed to, in response to operating the starter to crank the engine, command the switch to open. 5. The hybrid vehicle of claim 4 wherein the controller is further programmed to, in response to engine cranking being completed, compare a voltage of the first bus to the voltage of the second bus and output a diagnostic indication to a display if a difference between the voltage of the second bus and the voltage of the first bus is less than a predetermined difference while the switch is commanded to open. 6. The hybrid vehicle of claim 1 wherein the controller is further programmed to compare a voltage of the first bus to the voltage of the second bus. 7. The hybrid vehicle of claim 6 wherein the controller is further programmed to output a diagnostic indication to a display in response to a difference between the voltage of the second bus and the voltage of the first bus being less than a predetermined difference while the switch is commanded to open. 8. A hybrid vehicle power distribution system comprising:
a first bus electrically coupled to a starter for an engine; a second bus electrically coupled to a power converter; a switch disposed between the first bus and the second bus; and a controller programmed to command the switch open during engine starting, and, in response to expiration of a predetermined time without starting the engine, command the switch open for a predetermined duration. 9. The hybrid vehicle power distribution system of claim 8 wherein the controller is further programmed to otherwise command the switch closed. 10. The hybrid vehicle power distribution system of claim 8 wherein the controller is further programmed to command the switch open in response to a voltage of the second bus exceeding a voltage threshold indicative of the power converter providing power to the second bus before expiration of the predetermined time. 11. The hybrid vehicle power distribution system of claim 8 wherein the predetermined duration is greater than one second. 12. The hybrid vehicle power distribution system of claim 8 wherein the controller is further programmed to, in response to the starter being inactive, compare a voltage of the first bus to a voltage of the second bus. 13. The hybrid vehicle power distribution system of claim 12 wherein the controller is further programmed to output a diagnostic indication to a display in response to a difference between the voltage of the second bus and the voltage of the first bus being less than a predetermined difference while the switch is commanded open. 14. The hybrid vehicle power distribution system of claim 8 wherein the predetermined time is increased after a first instance of commanding the switch open. 15. A method for a vehicle with a hybrid powertrain comprising:
commanding, by a controller, a switch, being normally closed and disposed between a first bus providing power to a starter for an engine and a second bus receiving power from a power converter, to open for a predetermined duration in response to initiating an ignition cycle in which the hybrid powertrain is in a run mode without starting the engine. 16. The method of claim 15 further comprising measuring, by the controller, a voltage of the first bus and a voltage of the second bus while the switch is commanded open. 17. The method of claim 16 further comprising outputting, by the controller, a diagnostic indicator to a display in response to a difference between the voltage of the second bus and the voltage of the first bus being less than a predetermined difference while the switch is commanded open. 18. The method of claim 15 further comprising commanding, by the controller, the switch to close in response to expiration of the predetermined duration. 19. The method of claim 15 further comprising commanding, by the controller, the switch to open in response to operating the starter to crank the engine. 20. The method of claim 19 further comprising outputting, by the controller, a diagnostic indicator to a display in response to the engine being in a run mode and a difference between a voltage of the second bus and a voltage of the first bus being less than a predetermined difference. | A hybrid vehicle includes an isolation switch disposed between a first bus that is electrically coupled to a starter for an engine and a second bus that is electrically coupled to a power converter and accessory loads. The hybrid vehicle includes a controller programmed to normally command the switch closed, and, in response to expiration of a predetermined time interval without starting the engine, command the switch to open for a predetermined duration to perform diagnostics on the isolation switch.1. A hybrid vehicle comprising:
a switch disposed between a first bus electrically coupled to a starter for an engine and a second bus electrically coupled to a power converter; and a controller programmed to command the switch to close, and, in response to a voltage of the second bus exceeding a voltage threshold after initiating an ignition cycle that begins without starting the engine, command the switch to open for a predetermined duration. 2. The hybrid vehicle of claim 1 wherein the voltage threshold is indicative of the power converter operating to transfer power from a high-voltage bus to the second bus. 3. The hybrid vehicle of claim 1 wherein the voltage threshold is a value expected to be a predetermined amount greater than a nominal battery voltage of a battery electrically coupled to the first bus. 4. The hybrid vehicle of claim 1 wherein the controller is further programmed to, in response to operating the starter to crank the engine, command the switch to open. 5. The hybrid vehicle of claim 4 wherein the controller is further programmed to, in response to engine cranking being completed, compare a voltage of the first bus to the voltage of the second bus and output a diagnostic indication to a display if a difference between the voltage of the second bus and the voltage of the first bus is less than a predetermined difference while the switch is commanded to open. 6. The hybrid vehicle of claim 1 wherein the controller is further programmed to compare a voltage of the first bus to the voltage of the second bus. 7. The hybrid vehicle of claim 6 wherein the controller is further programmed to output a diagnostic indication to a display in response to a difference between the voltage of the second bus and the voltage of the first bus being less than a predetermined difference while the switch is commanded to open. 8. A hybrid vehicle power distribution system comprising:
a first bus electrically coupled to a starter for an engine; a second bus electrically coupled to a power converter; a switch disposed between the first bus and the second bus; and a controller programmed to command the switch open during engine starting, and, in response to expiration of a predetermined time without starting the engine, command the switch open for a predetermined duration. 9. The hybrid vehicle power distribution system of claim 8 wherein the controller is further programmed to otherwise command the switch closed. 10. The hybrid vehicle power distribution system of claim 8 wherein the controller is further programmed to command the switch open in response to a voltage of the second bus exceeding a voltage threshold indicative of the power converter providing power to the second bus before expiration of the predetermined time. 11. The hybrid vehicle power distribution system of claim 8 wherein the predetermined duration is greater than one second. 12. The hybrid vehicle power distribution system of claim 8 wherein the controller is further programmed to, in response to the starter being inactive, compare a voltage of the first bus to a voltage of the second bus. 13. The hybrid vehicle power distribution system of claim 12 wherein the controller is further programmed to output a diagnostic indication to a display in response to a difference between the voltage of the second bus and the voltage of the first bus being less than a predetermined difference while the switch is commanded open. 14. The hybrid vehicle power distribution system of claim 8 wherein the predetermined time is increased after a first instance of commanding the switch open. 15. A method for a vehicle with a hybrid powertrain comprising:
commanding, by a controller, a switch, being normally closed and disposed between a first bus providing power to a starter for an engine and a second bus receiving power from a power converter, to open for a predetermined duration in response to initiating an ignition cycle in which the hybrid powertrain is in a run mode without starting the engine. 16. The method of claim 15 further comprising measuring, by the controller, a voltage of the first bus and a voltage of the second bus while the switch is commanded open. 17. The method of claim 16 further comprising outputting, by the controller, a diagnostic indicator to a display in response to a difference between the voltage of the second bus and the voltage of the first bus being less than a predetermined difference while the switch is commanded open. 18. The method of claim 15 further comprising commanding, by the controller, the switch to close in response to expiration of the predetermined duration. 19. The method of claim 15 further comprising commanding, by the controller, the switch to open in response to operating the starter to crank the engine. 20. The method of claim 19 further comprising outputting, by the controller, a diagnostic indicator to a display in response to the engine being in a run mode and a difference between a voltage of the second bus and a voltage of the first bus being less than a predetermined difference. | 2,800 |
11,635 | 11,635 | 15,013,308 | 2,857 | A method of calculating a throat area of a section of a machinery, according to an exemplary aspect of the present disclosure includes, among other things, outlining a boundary of the throat area of the section, selecting a plurality of inspection points along the boundary of the throat area, dividing the throat area into a plurality of sections, calculating an individual area of each of the plurality of sections and summing the individual areas of each of the plurality of sections to calculate the throat area. | 1. A method associated for use with a gas turbine engine, comprising:
calculating a throat area of a vane segment of the gas turbine engine by radially dividing the throat area into a plurality of sections, calculating an individual area associated with each of the plurality of sections, and summing the individual areas to calculate the throat area, the vane segment including a first platform and a second platform and a first airfoil and a second airfoil extending between the first platform and the second platform; and adjusting a design characteristic of the vane segment based on the calculated throat area. 2. The method as recited in claim 1, wherein adjusting the design characteristic of the vane segment includes cutting or trimming a portion of the vane segment. 3. The method as recited in claim 2, wherein cutting or trimming the portion of the vane segment includes trimming a trailing edge of at least one of the first airfoil and the second airfoil. 4. The method as recited in claim 2, wherein cutting or trimming the portion of the vane segment includes machining the portion to remove material. 5. The method as recited in claim 2, wherein cutting or trimming the portion of the vane segment includes grinding the portion to remove material. 6. The method as recited in claim 2, wherein cutting or trimming the portion of the vane segment includes electrical discharge machining the portion to remove material. 7. The method as recited in claim 1, comprising, prior to radially dividing the throat area, outlining a boundary of the throat area of the vane segment by referencing a CAD model of the vane segment. 8. The method as recited in claim 7, comprising selecting a plurality of inspection points along the boundary of the throat area. 9. The method as recited in claim 8, comprising measuring a location of each of the plurality of inspection points using a coordinate measuring machine (CMM). 10. The method as recited in claim 1, comprising comparing the calculated throat area to a desired throat area and adjusting the design characteristic of the vane segment only if the calculated throat area is outside a manufacturing tolerance related to the desired throat area. 11. A method associated for use with a gas turbine engine, comprising:
inspecting a vane segment of the gas turbine engine, the vane segment including an end wall contoured flow path, and the vane segment including a first platform and a second platform and a first airfoil and a second airfoil extending between the first platform and the second platform; outlining a boundary of a throat area of the vane segment by referencing a CAD model of the vane segment; selecting a plurality of inspection points along the boundary of the throat area, at least a portion of the plurality of inspection points being located along the end wall contoured flow path of the vane segment; measuring a location of each of the plurality of inspection points on an actual casting of the vane segment using a coordinate measuring machine (CMM); calculating the throat area of the vane segment, including portions of the throat area encompassing the end wall contoured flow path, by radially dividing the throat area into a plurality of sections, calculating an individual area associated with each of the plurality of sections, and summing the individual areas to calculate the throat area; and adjusting a design characteristic of the vane segment if the calculated throat area is different than a desired throat area. 12. The method as recited in claim 11, wherein the end wall contoured flow path includes a plurality of undulations. 13. The method as recited in claim 11, comprising adjusting the throat area calculation based on an error value associated the calculated throat area. 14. The method as recited in claim 11, wherein adjusting the design characteristic of the vane segment includes cutting or trimming a trailing edge of either the first airfoil or the second airfoil. 15. The method as recited in claim 14, wherein cutting or trimming the trailing edge includes machining or grinding the trailing edge to remove material from the vane segment. | A method of calculating a throat area of a section of a machinery, according to an exemplary aspect of the present disclosure includes, among other things, outlining a boundary of the throat area of the section, selecting a plurality of inspection points along the boundary of the throat area, dividing the throat area into a plurality of sections, calculating an individual area of each of the plurality of sections and summing the individual areas of each of the plurality of sections to calculate the throat area.1. A method associated for use with a gas turbine engine, comprising:
calculating a throat area of a vane segment of the gas turbine engine by radially dividing the throat area into a plurality of sections, calculating an individual area associated with each of the plurality of sections, and summing the individual areas to calculate the throat area, the vane segment including a first platform and a second platform and a first airfoil and a second airfoil extending between the first platform and the second platform; and adjusting a design characteristic of the vane segment based on the calculated throat area. 2. The method as recited in claim 1, wherein adjusting the design characteristic of the vane segment includes cutting or trimming a portion of the vane segment. 3. The method as recited in claim 2, wherein cutting or trimming the portion of the vane segment includes trimming a trailing edge of at least one of the first airfoil and the second airfoil. 4. The method as recited in claim 2, wherein cutting or trimming the portion of the vane segment includes machining the portion to remove material. 5. The method as recited in claim 2, wherein cutting or trimming the portion of the vane segment includes grinding the portion to remove material. 6. The method as recited in claim 2, wherein cutting or trimming the portion of the vane segment includes electrical discharge machining the portion to remove material. 7. The method as recited in claim 1, comprising, prior to radially dividing the throat area, outlining a boundary of the throat area of the vane segment by referencing a CAD model of the vane segment. 8. The method as recited in claim 7, comprising selecting a plurality of inspection points along the boundary of the throat area. 9. The method as recited in claim 8, comprising measuring a location of each of the plurality of inspection points using a coordinate measuring machine (CMM). 10. The method as recited in claim 1, comprising comparing the calculated throat area to a desired throat area and adjusting the design characteristic of the vane segment only if the calculated throat area is outside a manufacturing tolerance related to the desired throat area. 11. A method associated for use with a gas turbine engine, comprising:
inspecting a vane segment of the gas turbine engine, the vane segment including an end wall contoured flow path, and the vane segment including a first platform and a second platform and a first airfoil and a second airfoil extending between the first platform and the second platform; outlining a boundary of a throat area of the vane segment by referencing a CAD model of the vane segment; selecting a plurality of inspection points along the boundary of the throat area, at least a portion of the plurality of inspection points being located along the end wall contoured flow path of the vane segment; measuring a location of each of the plurality of inspection points on an actual casting of the vane segment using a coordinate measuring machine (CMM); calculating the throat area of the vane segment, including portions of the throat area encompassing the end wall contoured flow path, by radially dividing the throat area into a plurality of sections, calculating an individual area associated with each of the plurality of sections, and summing the individual areas to calculate the throat area; and adjusting a design characteristic of the vane segment if the calculated throat area is different than a desired throat area. 12. The method as recited in claim 11, wherein the end wall contoured flow path includes a plurality of undulations. 13. The method as recited in claim 11, comprising adjusting the throat area calculation based on an error value associated the calculated throat area. 14. The method as recited in claim 11, wherein adjusting the design characteristic of the vane segment includes cutting or trimming a trailing edge of either the first airfoil or the second airfoil. 15. The method as recited in claim 14, wherein cutting or trimming the trailing edge includes machining or grinding the trailing edge to remove material from the vane segment. | 2,800 |
11,636 | 11,636 | 14,039,694 | 2,865 | A measuring device according to the invention comprises at least a first detector and a second detector for detecting a signal. It further comprises a control device and a display device. In this context, the control device is set up to cause the first detector and/or the second detector to be supplied with the first signal. The control device is further set up to selectively display the signal detected by the first detector by means of the display device in a first display region and in a second display region when a user entry determines a display in one of the display regions, and/or to display the signal detected by the second detector by means of the display device in the first display region and in the second display region when a user entry determines a display in one of the display regions. | 1. A measuring device, comprising:
at least a first detector and a second detector for detecting a signal; a control device; and a display device, wherein the control device is set up to cause at least one of the first detector and the second detector to be supplied with a first signal or to read out a signal from at least one of the first detector and the second detector in a targeted manner, and wherein the control device is set up to display the signal detected by at least one of the first detector and the second detector via the display device in a first display region and in a second display region when a user entry determines a display of the signal detected by at least one of the first detector and the second detector in one of the display regions. 2. The measuring device according to claim 1, wherein the control device is set up to display the signal detected by at least one of the first detector and the second detector via the display device in the first display region in a first display mode and in the second display region in a second display mode when a user entry determines a display of the signal detected by at least one of the first detector and the second detector in one of the display regions. 3. The measuring device according to claim 1, wherein the control device is set up to control the display device in a case of a user entry which determines a change of a display mode of the display of the signal detected by a detector in a display region in such a manner that the change of the display mode is implemented in all of the display regions in which the signal detected by the detector is displayed. 4. The measuring device according to claim 1, wherein the signal detected by the detectors is derived from a measurement signal. 5. The measuring device according to claim 1, further comprising a switching device, which is set up to supply the signal selectively to the detectors,
wherein the control device is set up to control the switching device. 6. The measuring device according to claim 1, further comprising an operating device, which is set up to process the user entry,
wherein the control device is set up to control the operating device and to receive the user entry from it. 7. The measuring device according to claim 1, further comprising at least one of a third detector, a fourth detector, a fifth detector, a sixth detector, a seventh detector, and an eighth detector,
wherein the control device is set up to display the signal detected by one or more of the detectors via the display device selectively in a first display region and in a second display region when a user entry determines a display in one of the display regions. 8. The measuring device according to claim 1, wherein the detectors comprise at least one of a maximum-level detector, a maximum trace detector, an average level detector, a minimum level detector, a mean power detector, a weighted level detector, a time-constant level detector, and a mean-power time-constant detector. 9. The measuring device according to claim 1, wherein all of the detectors are of different detector types. 10. A measuring method for measuring and displaying a signal, comprising:
detecting a signal by at least one of a first detector and a second detector; and displaying the signal detected by at least one of the first detector and the second detector, in a selective manner, via a display device in a first display region and in a second display region when a user entry determines a display of the signal detected by at least one of the first detector and the second detector in one of the display regions. | A measuring device according to the invention comprises at least a first detector and a second detector for detecting a signal. It further comprises a control device and a display device. In this context, the control device is set up to cause the first detector and/or the second detector to be supplied with the first signal. The control device is further set up to selectively display the signal detected by the first detector by means of the display device in a first display region and in a second display region when a user entry determines a display in one of the display regions, and/or to display the signal detected by the second detector by means of the display device in the first display region and in the second display region when a user entry determines a display in one of the display regions.1. A measuring device, comprising:
at least a first detector and a second detector for detecting a signal; a control device; and a display device, wherein the control device is set up to cause at least one of the first detector and the second detector to be supplied with a first signal or to read out a signal from at least one of the first detector and the second detector in a targeted manner, and wherein the control device is set up to display the signal detected by at least one of the first detector and the second detector via the display device in a first display region and in a second display region when a user entry determines a display of the signal detected by at least one of the first detector and the second detector in one of the display regions. 2. The measuring device according to claim 1, wherein the control device is set up to display the signal detected by at least one of the first detector and the second detector via the display device in the first display region in a first display mode and in the second display region in a second display mode when a user entry determines a display of the signal detected by at least one of the first detector and the second detector in one of the display regions. 3. The measuring device according to claim 1, wherein the control device is set up to control the display device in a case of a user entry which determines a change of a display mode of the display of the signal detected by a detector in a display region in such a manner that the change of the display mode is implemented in all of the display regions in which the signal detected by the detector is displayed. 4. The measuring device according to claim 1, wherein the signal detected by the detectors is derived from a measurement signal. 5. The measuring device according to claim 1, further comprising a switching device, which is set up to supply the signal selectively to the detectors,
wherein the control device is set up to control the switching device. 6. The measuring device according to claim 1, further comprising an operating device, which is set up to process the user entry,
wherein the control device is set up to control the operating device and to receive the user entry from it. 7. The measuring device according to claim 1, further comprising at least one of a third detector, a fourth detector, a fifth detector, a sixth detector, a seventh detector, and an eighth detector,
wherein the control device is set up to display the signal detected by one or more of the detectors via the display device selectively in a first display region and in a second display region when a user entry determines a display in one of the display regions. 8. The measuring device according to claim 1, wherein the detectors comprise at least one of a maximum-level detector, a maximum trace detector, an average level detector, a minimum level detector, a mean power detector, a weighted level detector, a time-constant level detector, and a mean-power time-constant detector. 9. The measuring device according to claim 1, wherein all of the detectors are of different detector types. 10. A measuring method for measuring and displaying a signal, comprising:
detecting a signal by at least one of a first detector and a second detector; and displaying the signal detected by at least one of the first detector and the second detector, in a selective manner, via a display device in a first display region and in a second display region when a user entry determines a display of the signal detected by at least one of the first detector and the second detector in one of the display regions. | 2,800 |
11,637 | 11,637 | 15,329,624 | 2,872 | A microscope includes a light source(s) which produce an illumination beam path comprising light in a plurality of wavelength regions. A dichroic beam splitter arrangement having a dichroic mirror surface is arranged between objective optics and a tube lens in a beam path portion to produce a reflected partial beam and a transmitted partial beam. The beam splitter arrangement changes a propagation direction of the reflected partial beam relative to the illumination beam path by a specified deflection angle. The mirror surface is arranged at an angle of 22.5±7.5°. The beam splitter arrangement includes a further mirror(s) arranged in the reflected beam path. The propagation direction of the reflected partial beam is changed by the specified deflection angle using the sum of all reflections on the mirror surface and the further mirror(s). | 1. A microscope comprising:
a light source or a plurality of light sources which, individually or together, produce an illumination beam path comprising light in a plurality of wavelength regions, and a dichroic beam splitter arrangement having a dichroic mirror surface that is arranged between objective optics and a tube lens in a beam path portion comprising the plurality of wavelength regions such that the mirror surface produces a reflected partial beam in a direction of a reflected beam path by reflection and produces a transmitted partial beam in a direction of a transmitted beam path by transmission, wherein a transmitted wavelength region of the transmitted partial beam is different from a reflected wavelength region of the reflected partial beam, the beam splitter arrangement changing the propagation direction of the reflected partial beam relative to the illumination beam path by a specified deflection angle, wherein the mirror surface is arranged in the beam path portion at an angle of 22.5±7.5°, and wherein the beam splitter arrangement comprises at least one further mirror arranged in the reflected beam path, the propagation direction of the reflected partial beam being changed by the specified deflection angle using the sum of all reflections on the mirror surface and the at least one further mirror. 2. The microscope according to claim 1, wherein the deflection angle is 90°. 3. The microscope according to either claim 1, wherein the at least one further mirror consists of only one mirror. 4. The microscope according to claim 1, wherein the mirror surface is formed of a layer structure attached to a plane-parallel transparent support plate. 5. The microscope according to claim 1, further comprising an adjustment device configured to remove the mirror surface from the beam path portion and to insert the mirror surface into the beam path portion. 6. The microscope according to claim 1, wherein the further mirror rigidly mounted in the microscope. 7. The microscope according to claim 1, further comprising an autofocus module comprising an autofocus light source that emits autofocus light to the beam splitter arrangement. 8. The microscope according to claim 7, wherein the wavelength of the autofocus light emitted by the autofocus light source is in the infrared region. 9. The microscope according to claim 7, wherein the autofocus light source emits the autofocus light to the further mirror arranged outside the common beam path portion, such that the further mirror reflects the autofocus light onto the mirror surface and the mirror surface reflects the reflected partial beam into the common beam path portion. 10. The microscope according to claim 9, wherein the transmitted partial beam strikes the mirror surface in the common beam path portion, counter to the propagation direction of the reflected partial beam. 11. The microscope according to claim 10, wherein the mirror surface is arranged upstream of the objective optics arranged in the common beam path portion in the propagation direction of the reflected partial beam. 12. The microscope according to claim 1, wherein the mirror surface is arranged in an infinite beam path. | A microscope includes a light source(s) which produce an illumination beam path comprising light in a plurality of wavelength regions. A dichroic beam splitter arrangement having a dichroic mirror surface is arranged between objective optics and a tube lens in a beam path portion to produce a reflected partial beam and a transmitted partial beam. The beam splitter arrangement changes a propagation direction of the reflected partial beam relative to the illumination beam path by a specified deflection angle. The mirror surface is arranged at an angle of 22.5±7.5°. The beam splitter arrangement includes a further mirror(s) arranged in the reflected beam path. The propagation direction of the reflected partial beam is changed by the specified deflection angle using the sum of all reflections on the mirror surface and the further mirror(s).1. A microscope comprising:
a light source or a plurality of light sources which, individually or together, produce an illumination beam path comprising light in a plurality of wavelength regions, and a dichroic beam splitter arrangement having a dichroic mirror surface that is arranged between objective optics and a tube lens in a beam path portion comprising the plurality of wavelength regions such that the mirror surface produces a reflected partial beam in a direction of a reflected beam path by reflection and produces a transmitted partial beam in a direction of a transmitted beam path by transmission, wherein a transmitted wavelength region of the transmitted partial beam is different from a reflected wavelength region of the reflected partial beam, the beam splitter arrangement changing the propagation direction of the reflected partial beam relative to the illumination beam path by a specified deflection angle, wherein the mirror surface is arranged in the beam path portion at an angle of 22.5±7.5°, and wherein the beam splitter arrangement comprises at least one further mirror arranged in the reflected beam path, the propagation direction of the reflected partial beam being changed by the specified deflection angle using the sum of all reflections on the mirror surface and the at least one further mirror. 2. The microscope according to claim 1, wherein the deflection angle is 90°. 3. The microscope according to either claim 1, wherein the at least one further mirror consists of only one mirror. 4. The microscope according to claim 1, wherein the mirror surface is formed of a layer structure attached to a plane-parallel transparent support plate. 5. The microscope according to claim 1, further comprising an adjustment device configured to remove the mirror surface from the beam path portion and to insert the mirror surface into the beam path portion. 6. The microscope according to claim 1, wherein the further mirror rigidly mounted in the microscope. 7. The microscope according to claim 1, further comprising an autofocus module comprising an autofocus light source that emits autofocus light to the beam splitter arrangement. 8. The microscope according to claim 7, wherein the wavelength of the autofocus light emitted by the autofocus light source is in the infrared region. 9. The microscope according to claim 7, wherein the autofocus light source emits the autofocus light to the further mirror arranged outside the common beam path portion, such that the further mirror reflects the autofocus light onto the mirror surface and the mirror surface reflects the reflected partial beam into the common beam path portion. 10. The microscope according to claim 9, wherein the transmitted partial beam strikes the mirror surface in the common beam path portion, counter to the propagation direction of the reflected partial beam. 11. The microscope according to claim 10, wherein the mirror surface is arranged upstream of the objective optics arranged in the common beam path portion in the propagation direction of the reflected partial beam. 12. The microscope according to claim 1, wherein the mirror surface is arranged in an infinite beam path. | 2,800 |
11,638 | 11,638 | 14,863,014 | 2,896 | A power supply circuit, suitable for use in an integrated circuit, the circuit configured to detect whether an output voltage has been specified using an external resistance network. The power supply circuit is configured to determine the appropriate output voltage to be generated based on a voltage measured at a single input pin of the power supply circuit, where the single input pin provides a feedback voltage used in the control loop of the power supply circuit. Based on the feedback voltage at the input pin, the power supply circuit is configured to detect the presence of a resistance network external to the single input pin. If an external resistance network is detected, the power supply is configured to generate the output voltage specified at the input pin. If no external resistance network is detected, the power supply is configured to generate a default output voltage. | 1. A power supply circuit comprising:
a regulator operable to convert an input voltage to an output voltage and further operable to set the output voltage based on a feedback voltage provided via a feedback loop; an input pin operable to receive an input pin voltage; and a detection circuit operable to set the feedback voltage based on the detection of a resistance connected external to the input pin, wherein the resistance is detected based on the input pin voltage. 2. The power supply circuit of claim 1, wherein the detection circuit is further operable to set the feedback voltage to a default output voltage, if no external resistance is detected. 3. The power supply circuit of claim 1, wherein the detection circuit is further operable to set the feedback voltage to the input pin voltage, if an external resistance is detected. 4. The power supply circuit of claim 1, wherein the detection circuit is further operable to set the feedback voltage to a reference voltage of the power supply, if an external resistance is detected and the input pin voltage has a pre-defined value. 5. The power supply circuit of claim 2, wherein the detection circuit includes an internal resistance network specifying the default output voltage and wherein the feedback voltage is set to the default output voltage by connecting the internal resistance network to the feedback loop. 6. The power supply circuit of claim 1, wherein the detection circuit comprises:
a pull-up circuit operable to apply a first pulse in the output current of the power supply and further configured to detect a first change in the input pin voltage in response to the first pulse; and a pull-up latch operable to record whether the first change is detected in the input pin voltage. 6. The power supply circuit of claim 6, wherein the detection circuit further comprises:
a pull-down circuit operable to apply a second pulse in the output current of the power supply and further configured to detect a second change in the input pin voltage in response to the second pulse; and a pull-down latch operable to record whether the second change is detected in the input pin voltage. 8. The power supply circuit of claim 7, wherein an external resistance is connected to the input pin if the pull-up latch records the detection of the first change in the input pin voltage and the pull-down latch records the detection of the second change in the input pin voltage. 9. The power supply circuit of claim 1, wherein the detection circuit is enabled during a test mode that expires after a predefined interval. 10. The power supply circuit of claim 6, wherein the duration of the first pulse is selected based on a capacitance connected external to the input pin. 11. A method for configuring the output voltage of a power supply comprising:
setting an output voltage of the power supply based on a feedback voltage provided via a feedback loop; measuring an input pin voltage at an input pin of the power supply; detecting a resistance connected external to the input pin, wherein the resistance is detected based on the input pin voltage; and setting the feedback voltage based on the detection of a resistance connected external to the input pin. 12. The method of claim 11, further comprising:
setting the feedback voltage to a default output voltage, if no resistance is detected external to the input pin. 13. The method of claim 11, further comprising:
setting the feedback voltage to the input pin voltage, if a resistance is detected external to the input pin. 14. The method of claim 11, further comprising:
setting the feedback voltage to a reference voltage of the power supply, if a resistance is detected external to the input pin and the input pin voltage has a pre-defined value. 15. The method of claim 12, wherein the feedback voltage is set to the default output voltage by connecting an internal resistance network to the feedback loop. 16. The method of claim 11, further comprising:
applying a first pulse in the output current of the power supply; detecting a first change in the input pin voltage in response to the first pulse; and recording whether the first change is detected in the input pin voltage. 17. The method of claim 16, further comprising:
applying a second pulse in the output current of the power supply; detecting a second change in the input pin voltage in response to the second pulse; and recording whether the second change is detected in the input pin voltage. 18. The method of claim 7, further comprising
determining that an external resistance is connected to the input pin if the first change in the input pin voltage is recorded in response to the first pulse and the second change in the input pin voltage is recorded in response to the second pulse. 19. The method of claim 11, further comprising:
detecting the external resistance during a test mode that expires after a predefined interval. 20. The method of claim 16, wherein the duration of the first pulse is selected based on a capacitance connected external to the input pin. | A power supply circuit, suitable for use in an integrated circuit, the circuit configured to detect whether an output voltage has been specified using an external resistance network. The power supply circuit is configured to determine the appropriate output voltage to be generated based on a voltage measured at a single input pin of the power supply circuit, where the single input pin provides a feedback voltage used in the control loop of the power supply circuit. Based on the feedback voltage at the input pin, the power supply circuit is configured to detect the presence of a resistance network external to the single input pin. If an external resistance network is detected, the power supply is configured to generate the output voltage specified at the input pin. If no external resistance network is detected, the power supply is configured to generate a default output voltage.1. A power supply circuit comprising:
a regulator operable to convert an input voltage to an output voltage and further operable to set the output voltage based on a feedback voltage provided via a feedback loop; an input pin operable to receive an input pin voltage; and a detection circuit operable to set the feedback voltage based on the detection of a resistance connected external to the input pin, wherein the resistance is detected based on the input pin voltage. 2. The power supply circuit of claim 1, wherein the detection circuit is further operable to set the feedback voltage to a default output voltage, if no external resistance is detected. 3. The power supply circuit of claim 1, wherein the detection circuit is further operable to set the feedback voltage to the input pin voltage, if an external resistance is detected. 4. The power supply circuit of claim 1, wherein the detection circuit is further operable to set the feedback voltage to a reference voltage of the power supply, if an external resistance is detected and the input pin voltage has a pre-defined value. 5. The power supply circuit of claim 2, wherein the detection circuit includes an internal resistance network specifying the default output voltage and wherein the feedback voltage is set to the default output voltage by connecting the internal resistance network to the feedback loop. 6. The power supply circuit of claim 1, wherein the detection circuit comprises:
a pull-up circuit operable to apply a first pulse in the output current of the power supply and further configured to detect a first change in the input pin voltage in response to the first pulse; and a pull-up latch operable to record whether the first change is detected in the input pin voltage. 6. The power supply circuit of claim 6, wherein the detection circuit further comprises:
a pull-down circuit operable to apply a second pulse in the output current of the power supply and further configured to detect a second change in the input pin voltage in response to the second pulse; and a pull-down latch operable to record whether the second change is detected in the input pin voltage. 8. The power supply circuit of claim 7, wherein an external resistance is connected to the input pin if the pull-up latch records the detection of the first change in the input pin voltage and the pull-down latch records the detection of the second change in the input pin voltage. 9. The power supply circuit of claim 1, wherein the detection circuit is enabled during a test mode that expires after a predefined interval. 10. The power supply circuit of claim 6, wherein the duration of the first pulse is selected based on a capacitance connected external to the input pin. 11. A method for configuring the output voltage of a power supply comprising:
setting an output voltage of the power supply based on a feedback voltage provided via a feedback loop; measuring an input pin voltage at an input pin of the power supply; detecting a resistance connected external to the input pin, wherein the resistance is detected based on the input pin voltage; and setting the feedback voltage based on the detection of a resistance connected external to the input pin. 12. The method of claim 11, further comprising:
setting the feedback voltage to a default output voltage, if no resistance is detected external to the input pin. 13. The method of claim 11, further comprising:
setting the feedback voltage to the input pin voltage, if a resistance is detected external to the input pin. 14. The method of claim 11, further comprising:
setting the feedback voltage to a reference voltage of the power supply, if a resistance is detected external to the input pin and the input pin voltage has a pre-defined value. 15. The method of claim 12, wherein the feedback voltage is set to the default output voltage by connecting an internal resistance network to the feedback loop. 16. The method of claim 11, further comprising:
applying a first pulse in the output current of the power supply; detecting a first change in the input pin voltage in response to the first pulse; and recording whether the first change is detected in the input pin voltage. 17. The method of claim 16, further comprising:
applying a second pulse in the output current of the power supply; detecting a second change in the input pin voltage in response to the second pulse; and recording whether the second change is detected in the input pin voltage. 18. The method of claim 7, further comprising
determining that an external resistance is connected to the input pin if the first change in the input pin voltage is recorded in response to the first pulse and the second change in the input pin voltage is recorded in response to the second pulse. 19. The method of claim 11, further comprising:
detecting the external resistance during a test mode that expires after a predefined interval. 20. The method of claim 16, wherein the duration of the first pulse is selected based on a capacitance connected external to the input pin. | 2,800 |
11,639 | 11,639 | 15,281,864 | 2,833 | A push-in connector generally having an interior channel equipped with longitudinal protrusions that run at least part of the length of the interior channel of the connector body to define grooves through which wires of a different gauges can be inserted. When the user rotates the connector body about its longitudinal axis, the interior channel defines a second gauge through which a wire of a second gauge can pass. The connector body has one or more incisions cut into one end of the connector body and a separate cuff that fits over the feed end. The interior channel contains teeth that grip the wire(s) or cable(s) once inserted. The exterior of the connector body has flexible exterior protrusions that can be pushed down when inserting the connector through the knock-out of a housing and spring back into place to secure the connector to the housing. | 1: A push-in connector comprising—
a body with an interior channel running the length of the longitudinal axis of the body;
wherein the interior channel is shaped to snugly secure, in at least two different axes, a first gauge of cable inserted in a first orientation and a second gauge of cable inserted separately in a second orientation, the second orientation being accessible upon a corresponding specific rotation of the body around its longitudinal axis. 2: The push-in connector of claim 1 wherein the longitudinal channel features protrusions that define at least one groove capable of snugly securing the first gauge of cable in the first orientation. 3: The push-in connector of claim 1 wherein the longitudinal channel features protrusions that define at least two grooves each capable of snugly securing the first gauge of cable in the first orientation. 4: The push-in connector of claim 1 wherein the protrusions define a space that snugly secures the second gauge of cable in the second orientation. 5: The push-in connector of claim 1 wherein the first gauge of cable is 14/2 AWG cable and the second gauge of cable is 12/2 AWG cable. 6: The push-in connector of claim 2 wherein the first gauge of cable is 14/2 AWG cable and the second gauge of cable is 12/2 AWG cable. 7: The push-in connector of claim 3 wherein the first gauge of cable is 14/2 AWG cable and the second gauge of cable is 12/2 AWG cable. 8: The push-in connector of claim 4 wherein the first gauge of cable is 14/2 AWG cable and the second gauge of cable is 12/2 AWG cable. 9: A non-metallic push-in connector comprising:
a body with an interior channel running the length of the longitudinal axis of the body; wherein the interior channel features at least two protrusions that define at least one groove and at least one space; wherein the at least one groove is sized to snugly secure a first gauge of cable inserted in a first orientation; and wherein the at least two protrusions define a space sized to snugly secure a second gauge of cable inserted separately from the first gauge of cable in a second orientation. 10: The non-metallic push-in connector of claim 9 further comprising a flange around an exterior circumference of the body. 11: The push-in connector of claim 10 further comprising at least one protrusion extending outward from the exterior surface of the body at one end of the body in a spaced relationship to the flange. 12: The non-metallic push-in connector of claim 11 further comprising:
at least one longitudinal incision traversing the connector body from the interior channel to an exterior surface of the body and extending from an end of the body opposite the protrusion extending outward from the exterior surface of the body in a spaced relationship to the flange; and
a cuff having a diameter equal to or less than the diameter of the exterior surface of the body. 13: The push-in connector of claim 9 wherein the first gauge of cable is 14/2 AWG cable and the second gauge of cable is 12/2 AWG cable. 14: The push-in connector of claim 10 wherein the first gauge of cable is 14/2 AWG cable and the second gauge of cable is 12/2 AWG cable. 15: The push-in connector of claim 11 wherein the first gauge of cable is 14/2 AWG cable and the second gauge of cable is 12/2 AWG cable. 16: The push-in connector of claim 12 wherein the first gauge of cable is 14/2 AWG cable and the second gauge of cable is 12/2 AWG cable. 17: A push-in connector comprising—
a non-metallic body with an interior channel running the length of the longitudinal axis of the body; the interior channel containing one or more protrusions that define a shape of the interior channel; the shape of the interior channel being able to snugly accept and secure cables of at least two different gauges, including without limitation a 14/2 AWG non-metallic cable and a 12/2 AWG non-metallic cable, within the interior channel, each of the different gauges being accessible upon a corresponding specific rotation of the body around its longitudinal axis;
a flange around the exterior circumference of the body;
at least one protrusion extending outward from the exterior surface of the body at one end of the body in a spaced relationship to the flange; and
a non-screw means to constrict the circumference of the body, the means being a system comprising at least one longitudinal incision traversing the connector body from the interior channel to the exterior of the connector body and extending from the end of the body opposite the protrusion extending outward from the exterior surface of the body in a spaced relationship to the flange; and a cuff having a diameter equal to or less than the diameter of the exterior surface of the body. 18. The push-in connector of claim 17 wherein the protrusions in the interior channel extend from a first end of the connector body to a portion of the interior channel that is adjacent to the flange on the exterior of the body. 19. The push-in connector of claim 1 wherein the first gauge of cable is 12/2 AWG cable and the second gauge of cable is 10/2 AWG cable. 20. The push-in connector of claim 9 wherein the first gauge of cable is 12/2 AWG cable and the second gauge of cable is 10/2 AWG cable. | A push-in connector generally having an interior channel equipped with longitudinal protrusions that run at least part of the length of the interior channel of the connector body to define grooves through which wires of a different gauges can be inserted. When the user rotates the connector body about its longitudinal axis, the interior channel defines a second gauge through which a wire of a second gauge can pass. The connector body has one or more incisions cut into one end of the connector body and a separate cuff that fits over the feed end. The interior channel contains teeth that grip the wire(s) or cable(s) once inserted. The exterior of the connector body has flexible exterior protrusions that can be pushed down when inserting the connector through the knock-out of a housing and spring back into place to secure the connector to the housing.1: A push-in connector comprising—
a body with an interior channel running the length of the longitudinal axis of the body;
wherein the interior channel is shaped to snugly secure, in at least two different axes, a first gauge of cable inserted in a first orientation and a second gauge of cable inserted separately in a second orientation, the second orientation being accessible upon a corresponding specific rotation of the body around its longitudinal axis. 2: The push-in connector of claim 1 wherein the longitudinal channel features protrusions that define at least one groove capable of snugly securing the first gauge of cable in the first orientation. 3: The push-in connector of claim 1 wherein the longitudinal channel features protrusions that define at least two grooves each capable of snugly securing the first gauge of cable in the first orientation. 4: The push-in connector of claim 1 wherein the protrusions define a space that snugly secures the second gauge of cable in the second orientation. 5: The push-in connector of claim 1 wherein the first gauge of cable is 14/2 AWG cable and the second gauge of cable is 12/2 AWG cable. 6: The push-in connector of claim 2 wherein the first gauge of cable is 14/2 AWG cable and the second gauge of cable is 12/2 AWG cable. 7: The push-in connector of claim 3 wherein the first gauge of cable is 14/2 AWG cable and the second gauge of cable is 12/2 AWG cable. 8: The push-in connector of claim 4 wherein the first gauge of cable is 14/2 AWG cable and the second gauge of cable is 12/2 AWG cable. 9: A non-metallic push-in connector comprising:
a body with an interior channel running the length of the longitudinal axis of the body; wherein the interior channel features at least two protrusions that define at least one groove and at least one space; wherein the at least one groove is sized to snugly secure a first gauge of cable inserted in a first orientation; and wherein the at least two protrusions define a space sized to snugly secure a second gauge of cable inserted separately from the first gauge of cable in a second orientation. 10: The non-metallic push-in connector of claim 9 further comprising a flange around an exterior circumference of the body. 11: The push-in connector of claim 10 further comprising at least one protrusion extending outward from the exterior surface of the body at one end of the body in a spaced relationship to the flange. 12: The non-metallic push-in connector of claim 11 further comprising:
at least one longitudinal incision traversing the connector body from the interior channel to an exterior surface of the body and extending from an end of the body opposite the protrusion extending outward from the exterior surface of the body in a spaced relationship to the flange; and
a cuff having a diameter equal to or less than the diameter of the exterior surface of the body. 13: The push-in connector of claim 9 wherein the first gauge of cable is 14/2 AWG cable and the second gauge of cable is 12/2 AWG cable. 14: The push-in connector of claim 10 wherein the first gauge of cable is 14/2 AWG cable and the second gauge of cable is 12/2 AWG cable. 15: The push-in connector of claim 11 wherein the first gauge of cable is 14/2 AWG cable and the second gauge of cable is 12/2 AWG cable. 16: The push-in connector of claim 12 wherein the first gauge of cable is 14/2 AWG cable and the second gauge of cable is 12/2 AWG cable. 17: A push-in connector comprising—
a non-metallic body with an interior channel running the length of the longitudinal axis of the body; the interior channel containing one or more protrusions that define a shape of the interior channel; the shape of the interior channel being able to snugly accept and secure cables of at least two different gauges, including without limitation a 14/2 AWG non-metallic cable and a 12/2 AWG non-metallic cable, within the interior channel, each of the different gauges being accessible upon a corresponding specific rotation of the body around its longitudinal axis;
a flange around the exterior circumference of the body;
at least one protrusion extending outward from the exterior surface of the body at one end of the body in a spaced relationship to the flange; and
a non-screw means to constrict the circumference of the body, the means being a system comprising at least one longitudinal incision traversing the connector body from the interior channel to the exterior of the connector body and extending from the end of the body opposite the protrusion extending outward from the exterior surface of the body in a spaced relationship to the flange; and a cuff having a diameter equal to or less than the diameter of the exterior surface of the body. 18. The push-in connector of claim 17 wherein the protrusions in the interior channel extend from a first end of the connector body to a portion of the interior channel that is adjacent to the flange on the exterior of the body. 19. The push-in connector of claim 1 wherein the first gauge of cable is 12/2 AWG cable and the second gauge of cable is 10/2 AWG cable. 20. The push-in connector of claim 9 wherein the first gauge of cable is 12/2 AWG cable and the second gauge of cable is 10/2 AWG cable. | 2,800 |
11,640 | 11,640 | 14,194,701 | 2,867 | Various circuit board embodiments are disclosed. In one aspect, an apparatus is provided that includes a circuit board and a first phase change material pocket positioned on or in the circuit board and contacting a surface of the circuit board. | 1. An apparatus, comprising:
a circuit board; and a first phase change material pocket positioned on or in the circuit board and contacting a surface of the circuit board. 2. The apparatus of claim 1, wherein the first phase change material pocket comprises an internal space of the circuit board holding the phase change material. 3. The apparatus of claim 1, wherein the first phase change material pocket comprises a shell coupled to an exterior of the circuit board. 4. The apparatus of claim 3, wherein the circuit board comprises a component mounted on the exterior, the shell comprising a frame positioned around the component. 5. The apparatus of claim 3, wherein the shell surrounds the circuit board. 6. The apparatus of claim 1, wherein the circuit board comprises an exterior and a component mounted on the exterior, the first phase change material pocket being positioned beneath the component. 7. The apparatus of claim 1, comprising a second phase change material pocket positioned on or in the circuit board. 8. The apparatus of claim 1, comprising a semiconductor chip mounted on the circuit board and having a second phase change material pocket. 9. The apparatus of claim 1 comprising an electronic device coupled to the circuit board. 10. A method of manufacturing, comprising:
providing a circuit board; and positioning a first phase change material pocket on or in the circuit board to contact a surface of the circuit board. 11. The method of claim 10, wherein the first phase change material pocket is positioned in an internal space of the circuit board. 12. The method of claim 10, wherein the first phase change material pocket comprises a shell coupled to an exterior of the circuit board. 13. The method of claim 12, wherein the circuit board comprises a component mounted on the exterior, the shell comprising a frame positioned around the component. 14. The method of claim 12, wherein the shell surrounds the circuit board. 15. The method of claim 10, wherein the circuit board comprises an exterior and a component mounted on the exterior, the first phase change material pocket being positioned beneath the component. 16. The method of claim 10, comprising positioning a second phase change material pocket on or in the circuit board. 17. The method of claim 10, comprising mounting a semiconductor chip on the circuit board, the semiconductor chip having a second phase change material pocket. 18. A method of providing thermal management for a component mounted on a circuit board, comprising:
positioning a first phase change material pocket on or in the circuit board; and establishing thermal contact between the phase change material pocket and the component. 19. The method of claim 18, wherein the first phase change material pocket is positioned in an internal space of the circuit board. 20. The method of claim 18, wherein the first phase change material pocket comprises a shell coupled to an exterior of the circuit board. 21. The method of claim 18, comprising positioning a second phase change material pocket on or in the component. | Various circuit board embodiments are disclosed. In one aspect, an apparatus is provided that includes a circuit board and a first phase change material pocket positioned on or in the circuit board and contacting a surface of the circuit board.1. An apparatus, comprising:
a circuit board; and a first phase change material pocket positioned on or in the circuit board and contacting a surface of the circuit board. 2. The apparatus of claim 1, wherein the first phase change material pocket comprises an internal space of the circuit board holding the phase change material. 3. The apparatus of claim 1, wherein the first phase change material pocket comprises a shell coupled to an exterior of the circuit board. 4. The apparatus of claim 3, wherein the circuit board comprises a component mounted on the exterior, the shell comprising a frame positioned around the component. 5. The apparatus of claim 3, wherein the shell surrounds the circuit board. 6. The apparatus of claim 1, wherein the circuit board comprises an exterior and a component mounted on the exterior, the first phase change material pocket being positioned beneath the component. 7. The apparatus of claim 1, comprising a second phase change material pocket positioned on or in the circuit board. 8. The apparatus of claim 1, comprising a semiconductor chip mounted on the circuit board and having a second phase change material pocket. 9. The apparatus of claim 1 comprising an electronic device coupled to the circuit board. 10. A method of manufacturing, comprising:
providing a circuit board; and positioning a first phase change material pocket on or in the circuit board to contact a surface of the circuit board. 11. The method of claim 10, wherein the first phase change material pocket is positioned in an internal space of the circuit board. 12. The method of claim 10, wherein the first phase change material pocket comprises a shell coupled to an exterior of the circuit board. 13. The method of claim 12, wherein the circuit board comprises a component mounted on the exterior, the shell comprising a frame positioned around the component. 14. The method of claim 12, wherein the shell surrounds the circuit board. 15. The method of claim 10, wherein the circuit board comprises an exterior and a component mounted on the exterior, the first phase change material pocket being positioned beneath the component. 16. The method of claim 10, comprising positioning a second phase change material pocket on or in the circuit board. 17. The method of claim 10, comprising mounting a semiconductor chip on the circuit board, the semiconductor chip having a second phase change material pocket. 18. A method of providing thermal management for a component mounted on a circuit board, comprising:
positioning a first phase change material pocket on or in the circuit board; and establishing thermal contact between the phase change material pocket and the component. 19. The method of claim 18, wherein the first phase change material pocket is positioned in an internal space of the circuit board. 20. The method of claim 18, wherein the first phase change material pocket comprises a shell coupled to an exterior of the circuit board. 21. The method of claim 18, comprising positioning a second phase change material pocket on or in the component. | 2,800 |
11,641 | 11,641 | 15,167,649 | 2,827 | A processor-in-memory device includes a memory array, a sense amplifier, and a processing unit that has an accumulator. The processing unit is configured to receive a set of data. The processing unit then uses the sense amplifier and the accumulator to generate a first histogram of the set of data. | 1. A processor-in-memory device, comprising
a memory array including a plurality of memory locations; and a plurality of compute components, wherein the processor-in-memory device is configured to:
determine a category of each of one or more data points in a batch of data from a data set;
set a flag representing the category of each of the one or more data points in each of a respective one of the plurality of compute component; and
increment a value stored in each of the plurality of memory locations based on the flag set in each of the plurality of compute components. 2. The processor-in-memory device of claim 1, wherein the processor-in-memory device is configured to set a flag representing the category of each of the one or more data points in each of a respective one of a plurality of storage elements, and
wherein the processor-in-memory device is configured to set the flag representing the category of each of the one or more data points in each of a respective one of the plurality of compute components based on the set flags in each of the plurality of storage elements. 3. The processor-in-memory device of claim 2, wherein each of the plurality of storage elements comprises a sense amplifier. 4. The processor-in-memory device of claim 2, wherein the processor-in-memory device is configured to set the flag representing the category of each of the one or more data points in each of the respective one of the plurality of accumulators by performing a bit-wise OR operation using the flag representing the category of each of the one or more data points in each of a respective one of a plurality of storage elements. 5. The processor-in-memory device of claim 1, wherein the processor-in-memory device is configured to generate a histogram of the batch of data by incrementing the value stored in each of the plurality of memory locations. 6. The processor-in-memory device of claim 5, further comprising a plurality of counters, wherein the processing unit is configured to generate the histogram without using the counters. 7. The processor-in-memory device of claim 1, wherein the processor-in-memory device is configured to:
clear the flag in each of the plurality of compute components; determine a category of each of one or more data points in a second batch of data from the data set; set a flag representing the category of each of the one or more data points of the second batch in each of the respective one of the plurality of compute components; and increment a value stored in each of the plurality of memory locations based on the flag set in each of the plurality of compute components. 8. The processor-in-memory device of claim 7, wherein the processor-in-memory device is configured to generate a histogram of the second batch of data by incrementing the value stored in each of the plurality of memory locations. 9. The processor-in-memory device of claim 7, wherein the processor-in-memory device is configured to generate a histogram of the first batch and the second batch of the data set based on values stored in each of the plurality of memory locations. 10. The processor-in-memory device of claim 1, wherein the memory array is a dynamic random access memory array. 11. The processor-in-memory device of claim 1, wherein the data set is stored within the memory array. 12. The processor-in-memory device of claim 1, wherein the processor-in-memory device is configured to read the data set from the memory array before determining the category of each of the one or more data points. 13. The processor-in-memory device of claim 1, wherein the processor-in-memory device is configured to receive a data stream comprising the data set before determining the category of each of the one or more data points. 14. The processor-in-memory device of claim 1, wherein each of the plurality of compute components comprises an accumulator. 15. A system, comprising:
a host processor; and a processor-in-memory device coupled to the host processor, wherein the processor-in-memory device comprises:
a memory array comprising a plurality of memory locations;
a first accumulator coupled to a first group of the plurality of memory locations; and
a second accumulator coupled to a second group of the plurality of memory locations,
wherein the processor-in-memory device is configured to:
increment a value stored in each of the first group of the plurality of memory locations to generate a first histogram of a first batch of a data set using the first accumulator;
increment a value stored in each of the second group of the plurality of memory locations to generate a second histogram of a second batch of the data set using the second accumulator. 16. The system of claim 15, wherein the processor-in-memory device is configured to generate a third histogram of the data set based on the values in each of the first group and the second group of the plurality of memory locations. 17. The system of claim 15, wherein the processor-in-memory is configured to increment the values stored in the first group and the second group of the plurality of storage locations in parallel. 18. The system of claim 15, wherein the processor-in-memory device is configured to receive a mapping configuration assigning an identification number and one of the plurality of memory locations in the memory array to each of a plurality of categories. 19. The system of claim 15, wherein the processor-in-memory device is configured to generate the first histogram by:
clearing data stored in the plurality of memory locations; for each data point in the first batch:
selecting a category of the data point from a plurality of categories;
setting a first bit in a storage element of the system wherein the first bit corresponds to the selected category;
performing a bit-wise OR operation using values in the storage element and values in the first accumulator as operands; and
saving a result of the bit-wise OR operation in the first accumulator. 20. The system of claim 19, wherein the storage element comprises a sense amplifier. 21. The system of claim 15, wherein the memory array is a dynamic random access memory array. 22. The system of claim 15, wherein the system comprises a memory system. 23. A non-transitory, computer-readable medium comprising executable code comprising instructions to:
clear data stored in memory locations in a memory array assigned to each of a plurality of categories of data; cause a respective flag to be set representing each of the plurality of categories in a compute component; and increment a value stored in each of the memory locations based on the flag set in each of the plurality of compute components. 24. The non-transitory, computer-readable medium of claim 23, wherein the instructions further comprise instructions to:
clear the set flag in each of the plurality of compute components; receive a second batch of the data set; determine a category of each of one or more data points of the second batch; set a flag representing each of the plurality of categories in each of the respective one of the plurality of compute components; and increment the value stored in each of the plurality of memory locations based on the flag set in each of the plurality of compute components to generate a histogram. 25. The non-transitory, computer-readable medium of claim 23, wherein the instructions to generate the histogram comprise instructions to, for each data point in the first batch:
select a category of the data point from the plurality of categories; set a first flag in a storage element wherein the first flag corresponds to the selected category; perform a bit-wise OR operation using the values in the storage element and the compute component as operands; and save a result of the bit-wise OR operation in the compute components. 26. The non-transitory computer-readable medium of claim 23, wherein the instructions comprise instructions to increment each of the plurality of memory locations in the memory array if a second flag in the compute component assigned to the same category of the plurality of categories contains a non-zero value. 27. A system, comprising:
a host processor; and a memory system comprising:
a processor-in-memory device comprising a plurality of accumulators and a memory array having a plurality of memory locations;
a memory processor configured to control the processor-in-memory device to generate a histogram of a data set using the plurality of memory locations and the plurality of accumulators; and
an interface enabling data to transfer between the memory processor and the processor-in-memory device. 28. The system of claim 27, wherein the host processor is configured to transmit a request to generate the histogram to the memory processor. 29. The system of claim 27, wherein the processor-in-memory device is configured to generate the histogram of the data set by:
receiving a first batch of data from the data set, wherein the first batch of data comprises one or more data points; determining a category of each of the one or more data points; setting a flag representing the category of each of the one or more data points in each of a respective one of the plurality of accumulators; and incrementing a value stored in each of the plurality of memory locations based on the flag set in each of the plurality of accumulators. 30. The system of claim 29, wherein the processor-in-memory device is configured to set the flag representing the category of each of the one or more data points in each of the respective one of the plurality of accumulators by performing a bit-wise OR operation using the flag representing the category of each of the one or more data points in each of a respective one of a plurality of storage elements. 31. The system of claim 30, wherein each of the plurality of storage elements comprises a sense amplifier. 32. A method, comprising:
determining, using sensing circuitry of a memory device, a category of each of one or more data points of a data set; setting a flag representing the category of each of the one or more data points in the sensing circuitry; and incrementing a value stored in each of a plurality of memory locations in a memory array, based on the flag set in the sensing circuitry. 33. The method of claim 32, further comprising, before setting the flag in the sensing circuitry, clearing data from each of the sensing circuitry and wherein setting the flag in each of the sensing circuitry comprises:
setting a flag representing the category of each of the one or more data points in each of a respective one of a plurality of storage elements; performing a bit-wise OR operation using the values stored in the plurality of storage elements and the cleared values in the sensing circuitry as operands to generate a result; and saving the result in the sensing circuitry. 34. The method of claim 32, further comprising receiving a mapping configuration, wherein the mapping configuration indicates the identification number and the memory location corresponding to the category of each of the one or more data points. 35. The method of claim 32, further comprising clearing data from the memory location prior to determining the category of the data point. 36. The method of claim 32, further comprising:
determining if the data point is a final data point in a batch of the data set; if the data point is the final data point in the batch, incrementing the value stored in each of the plurality of memory locations corresponding to the category of the data point based on the flag set in the sensing circuitry; and if the data is not the final data point in the batch, determining a category of a next data point. 37. The method of claim 36, further comprising, after incrementing the value stored in each of the plurality of memory locations if the data point is the final data point in the batch:
determining if the batch is a final batch in the data set; if the batch is the final batch, generating a histogram result based at least on the value stored in each of the plurality of memory locations; and if the batch is not the final batch, clearing the value stored in the sensing circuitry. | A processor-in-memory device includes a memory array, a sense amplifier, and a processing unit that has an accumulator. The processing unit is configured to receive a set of data. The processing unit then uses the sense amplifier and the accumulator to generate a first histogram of the set of data.1. A processor-in-memory device, comprising
a memory array including a plurality of memory locations; and a plurality of compute components, wherein the processor-in-memory device is configured to:
determine a category of each of one or more data points in a batch of data from a data set;
set a flag representing the category of each of the one or more data points in each of a respective one of the plurality of compute component; and
increment a value stored in each of the plurality of memory locations based on the flag set in each of the plurality of compute components. 2. The processor-in-memory device of claim 1, wherein the processor-in-memory device is configured to set a flag representing the category of each of the one or more data points in each of a respective one of a plurality of storage elements, and
wherein the processor-in-memory device is configured to set the flag representing the category of each of the one or more data points in each of a respective one of the plurality of compute components based on the set flags in each of the plurality of storage elements. 3. The processor-in-memory device of claim 2, wherein each of the plurality of storage elements comprises a sense amplifier. 4. The processor-in-memory device of claim 2, wherein the processor-in-memory device is configured to set the flag representing the category of each of the one or more data points in each of the respective one of the plurality of accumulators by performing a bit-wise OR operation using the flag representing the category of each of the one or more data points in each of a respective one of a plurality of storage elements. 5. The processor-in-memory device of claim 1, wherein the processor-in-memory device is configured to generate a histogram of the batch of data by incrementing the value stored in each of the plurality of memory locations. 6. The processor-in-memory device of claim 5, further comprising a plurality of counters, wherein the processing unit is configured to generate the histogram without using the counters. 7. The processor-in-memory device of claim 1, wherein the processor-in-memory device is configured to:
clear the flag in each of the plurality of compute components; determine a category of each of one or more data points in a second batch of data from the data set; set a flag representing the category of each of the one or more data points of the second batch in each of the respective one of the plurality of compute components; and increment a value stored in each of the plurality of memory locations based on the flag set in each of the plurality of compute components. 8. The processor-in-memory device of claim 7, wherein the processor-in-memory device is configured to generate a histogram of the second batch of data by incrementing the value stored in each of the plurality of memory locations. 9. The processor-in-memory device of claim 7, wherein the processor-in-memory device is configured to generate a histogram of the first batch and the second batch of the data set based on values stored in each of the plurality of memory locations. 10. The processor-in-memory device of claim 1, wherein the memory array is a dynamic random access memory array. 11. The processor-in-memory device of claim 1, wherein the data set is stored within the memory array. 12. The processor-in-memory device of claim 1, wherein the processor-in-memory device is configured to read the data set from the memory array before determining the category of each of the one or more data points. 13. The processor-in-memory device of claim 1, wherein the processor-in-memory device is configured to receive a data stream comprising the data set before determining the category of each of the one or more data points. 14. The processor-in-memory device of claim 1, wherein each of the plurality of compute components comprises an accumulator. 15. A system, comprising:
a host processor; and a processor-in-memory device coupled to the host processor, wherein the processor-in-memory device comprises:
a memory array comprising a plurality of memory locations;
a first accumulator coupled to a first group of the plurality of memory locations; and
a second accumulator coupled to a second group of the plurality of memory locations,
wherein the processor-in-memory device is configured to:
increment a value stored in each of the first group of the plurality of memory locations to generate a first histogram of a first batch of a data set using the first accumulator;
increment a value stored in each of the second group of the plurality of memory locations to generate a second histogram of a second batch of the data set using the second accumulator. 16. The system of claim 15, wherein the processor-in-memory device is configured to generate a third histogram of the data set based on the values in each of the first group and the second group of the plurality of memory locations. 17. The system of claim 15, wherein the processor-in-memory is configured to increment the values stored in the first group and the second group of the plurality of storage locations in parallel. 18. The system of claim 15, wherein the processor-in-memory device is configured to receive a mapping configuration assigning an identification number and one of the plurality of memory locations in the memory array to each of a plurality of categories. 19. The system of claim 15, wherein the processor-in-memory device is configured to generate the first histogram by:
clearing data stored in the plurality of memory locations; for each data point in the first batch:
selecting a category of the data point from a plurality of categories;
setting a first bit in a storage element of the system wherein the first bit corresponds to the selected category;
performing a bit-wise OR operation using values in the storage element and values in the first accumulator as operands; and
saving a result of the bit-wise OR operation in the first accumulator. 20. The system of claim 19, wherein the storage element comprises a sense amplifier. 21. The system of claim 15, wherein the memory array is a dynamic random access memory array. 22. The system of claim 15, wherein the system comprises a memory system. 23. A non-transitory, computer-readable medium comprising executable code comprising instructions to:
clear data stored in memory locations in a memory array assigned to each of a plurality of categories of data; cause a respective flag to be set representing each of the plurality of categories in a compute component; and increment a value stored in each of the memory locations based on the flag set in each of the plurality of compute components. 24. The non-transitory, computer-readable medium of claim 23, wherein the instructions further comprise instructions to:
clear the set flag in each of the plurality of compute components; receive a second batch of the data set; determine a category of each of one or more data points of the second batch; set a flag representing each of the plurality of categories in each of the respective one of the plurality of compute components; and increment the value stored in each of the plurality of memory locations based on the flag set in each of the plurality of compute components to generate a histogram. 25. The non-transitory, computer-readable medium of claim 23, wherein the instructions to generate the histogram comprise instructions to, for each data point in the first batch:
select a category of the data point from the plurality of categories; set a first flag in a storage element wherein the first flag corresponds to the selected category; perform a bit-wise OR operation using the values in the storage element and the compute component as operands; and save a result of the bit-wise OR operation in the compute components. 26. The non-transitory computer-readable medium of claim 23, wherein the instructions comprise instructions to increment each of the plurality of memory locations in the memory array if a second flag in the compute component assigned to the same category of the plurality of categories contains a non-zero value. 27. A system, comprising:
a host processor; and a memory system comprising:
a processor-in-memory device comprising a plurality of accumulators and a memory array having a plurality of memory locations;
a memory processor configured to control the processor-in-memory device to generate a histogram of a data set using the plurality of memory locations and the plurality of accumulators; and
an interface enabling data to transfer between the memory processor and the processor-in-memory device. 28. The system of claim 27, wherein the host processor is configured to transmit a request to generate the histogram to the memory processor. 29. The system of claim 27, wherein the processor-in-memory device is configured to generate the histogram of the data set by:
receiving a first batch of data from the data set, wherein the first batch of data comprises one or more data points; determining a category of each of the one or more data points; setting a flag representing the category of each of the one or more data points in each of a respective one of the plurality of accumulators; and incrementing a value stored in each of the plurality of memory locations based on the flag set in each of the plurality of accumulators. 30. The system of claim 29, wherein the processor-in-memory device is configured to set the flag representing the category of each of the one or more data points in each of the respective one of the plurality of accumulators by performing a bit-wise OR operation using the flag representing the category of each of the one or more data points in each of a respective one of a plurality of storage elements. 31. The system of claim 30, wherein each of the plurality of storage elements comprises a sense amplifier. 32. A method, comprising:
determining, using sensing circuitry of a memory device, a category of each of one or more data points of a data set; setting a flag representing the category of each of the one or more data points in the sensing circuitry; and incrementing a value stored in each of a plurality of memory locations in a memory array, based on the flag set in the sensing circuitry. 33. The method of claim 32, further comprising, before setting the flag in the sensing circuitry, clearing data from each of the sensing circuitry and wherein setting the flag in each of the sensing circuitry comprises:
setting a flag representing the category of each of the one or more data points in each of a respective one of a plurality of storage elements; performing a bit-wise OR operation using the values stored in the plurality of storage elements and the cleared values in the sensing circuitry as operands to generate a result; and saving the result in the sensing circuitry. 34. The method of claim 32, further comprising receiving a mapping configuration, wherein the mapping configuration indicates the identification number and the memory location corresponding to the category of each of the one or more data points. 35. The method of claim 32, further comprising clearing data from the memory location prior to determining the category of the data point. 36. The method of claim 32, further comprising:
determining if the data point is a final data point in a batch of the data set; if the data point is the final data point in the batch, incrementing the value stored in each of the plurality of memory locations corresponding to the category of the data point based on the flag set in the sensing circuitry; and if the data is not the final data point in the batch, determining a category of a next data point. 37. The method of claim 36, further comprising, after incrementing the value stored in each of the plurality of memory locations if the data point is the final data point in the batch:
determining if the batch is a final batch in the data set; if the batch is the final batch, generating a histogram result based at least on the value stored in each of the plurality of memory locations; and if the batch is not the final batch, clearing the value stored in the sensing circuitry. | 2,800 |
11,642 | 11,642 | 14,249,465 | 2,849 | A method and apparatus for voltage clamping including: measuring a DC voltage across the PV module at an input of a power converter, comparing the measured DC voltage to the overvoltage threshold, determining the measured DC voltage exceeds the overvoltage threshold, and operating a clamping circuit to clamp at least a portion of the DC voltage prior to input to the power converter. | 1. An method for voltage clamping a photovoltaic (PV) module comprising:
measuring a DC voltage across the PV module at an input of a power converter; comparing the measured DC voltage to an overvoltage threshold; determining the measured DC voltage exceeds the overvoltage threshold; and operating a clamping circuit to clamp at least a portion of the DC voltage prior to input to the power converter. 2. The method of claim 1, wherein operating the clamping circuit further comprises returning to a normal operation mode when the measured DC voltage is below a predetermined threshold. 3. The method of claim 2, wherein the normal operation mode comprises conducting the full DC voltage value from the PV module to the at least one power converter. 4. The method of claim 1, the operating the clamping circuit further comprises closing a first switch coupled across the PV module output and opening a second switch coupled to the first switch. 5. The method of claim 1, wherein operating the clamping circuit further comprises closing a switch of a plurality of switches coupled across PV cells in the PV module. 6. The method of claim 5, wherein the remaining switches in the PV module are open such that the PV module generates a fraction of the DC voltage when all switches are open. 7. The method of claim 6, wherein when all switches are open, the PV module is operating in a normal mode. 8. The method of claim 1, wherein the clamping circuit clamps the DC voltage to a value less than an open circuit voltage of the PV module. 9. An apparatus for clamping the voltage of a photovoltaic (PV) module comprising:
a first switch coupled to an output port of the PV module; and a controller for measuring a DC voltage across the PV module at an input of a power converter, comparing the measured DC voltage to an overvoltage threshold, determining the measured DC voltage exceeds the overvoltage threshold, and operating the first switch to clamp at least a portion of the DC voltage prior to input to the power converter. 10. The apparatus of claim 9, wherein operating the first switch further comprises temporarily closing the first switch and returning to a normal operation mode when the measured DC voltage is below a predetermined threshold by opening the first switch. 11. The apparatus of claim 10, further comprising a second switch coupled to a first end of the first switch and alternating operation of the first and second switches such that both are of opposite switching states. 12. The apparatus of claim 9, wherein the first switch is located within the PV module housing. 13. The apparatus of claim 12, wherein the first switch is of a plurality of switches each coupled across a respective set of PV cells in the PV module. 14. The apparatus of claim 13, wherein the remaining switches in the PV module are open such that the PV module generates a fraction of the DC voltage when all switches are open. 15. The apparatus of claim 13, wherein when all switches are open, the PV module is operating in a normal mode. 16. The apparatus of claim 9, wherein the first switch is operated to clamp the DC voltage to a value less than an open circuit voltage of the PV module. 17. A system for clamping the voltage of a photovoltaic (PV) module comprising:
a plurality of PV modules; a plurality of power converters; and a plurality of clamping circuits each clamping circuit in the plurality of clamping circuits is respectively coupled between a PV module in the plurality of PV modules and a power converter comprising:
a first switch coupled to an output port of the PV module; and
a controller for measuring a DC voltage across the PV module at an input of the power converter, comparing the measured DC voltage to an overvoltage threshold, determining the measured DC voltage exceeds the overvoltage threshold, and operating the first switch to clamp at least a portion of the DC voltage prior to input to the power converter. 18. The system of claim 17, wherein the first switch is temporarily held in a closed position to clamp the DC voltage. 19. The system of claim 18, further comprising a second switch coupled to a first end of the first switch and alternating operation of the first and second switches such that both are of opposite switching states. 20. The system of claim 17, wherein the first switch is located within the PV module housing. | A method and apparatus for voltage clamping including: measuring a DC voltage across the PV module at an input of a power converter, comparing the measured DC voltage to the overvoltage threshold, determining the measured DC voltage exceeds the overvoltage threshold, and operating a clamping circuit to clamp at least a portion of the DC voltage prior to input to the power converter.1. An method for voltage clamping a photovoltaic (PV) module comprising:
measuring a DC voltage across the PV module at an input of a power converter; comparing the measured DC voltage to an overvoltage threshold; determining the measured DC voltage exceeds the overvoltage threshold; and operating a clamping circuit to clamp at least a portion of the DC voltage prior to input to the power converter. 2. The method of claim 1, wherein operating the clamping circuit further comprises returning to a normal operation mode when the measured DC voltage is below a predetermined threshold. 3. The method of claim 2, wherein the normal operation mode comprises conducting the full DC voltage value from the PV module to the at least one power converter. 4. The method of claim 1, the operating the clamping circuit further comprises closing a first switch coupled across the PV module output and opening a second switch coupled to the first switch. 5. The method of claim 1, wherein operating the clamping circuit further comprises closing a switch of a plurality of switches coupled across PV cells in the PV module. 6. The method of claim 5, wherein the remaining switches in the PV module are open such that the PV module generates a fraction of the DC voltage when all switches are open. 7. The method of claim 6, wherein when all switches are open, the PV module is operating in a normal mode. 8. The method of claim 1, wherein the clamping circuit clamps the DC voltage to a value less than an open circuit voltage of the PV module. 9. An apparatus for clamping the voltage of a photovoltaic (PV) module comprising:
a first switch coupled to an output port of the PV module; and a controller for measuring a DC voltage across the PV module at an input of a power converter, comparing the measured DC voltage to an overvoltage threshold, determining the measured DC voltage exceeds the overvoltage threshold, and operating the first switch to clamp at least a portion of the DC voltage prior to input to the power converter. 10. The apparatus of claim 9, wherein operating the first switch further comprises temporarily closing the first switch and returning to a normal operation mode when the measured DC voltage is below a predetermined threshold by opening the first switch. 11. The apparatus of claim 10, further comprising a second switch coupled to a first end of the first switch and alternating operation of the first and second switches such that both are of opposite switching states. 12. The apparatus of claim 9, wherein the first switch is located within the PV module housing. 13. The apparatus of claim 12, wherein the first switch is of a plurality of switches each coupled across a respective set of PV cells in the PV module. 14. The apparatus of claim 13, wherein the remaining switches in the PV module are open such that the PV module generates a fraction of the DC voltage when all switches are open. 15. The apparatus of claim 13, wherein when all switches are open, the PV module is operating in a normal mode. 16. The apparatus of claim 9, wherein the first switch is operated to clamp the DC voltage to a value less than an open circuit voltage of the PV module. 17. A system for clamping the voltage of a photovoltaic (PV) module comprising:
a plurality of PV modules; a plurality of power converters; and a plurality of clamping circuits each clamping circuit in the plurality of clamping circuits is respectively coupled between a PV module in the plurality of PV modules and a power converter comprising:
a first switch coupled to an output port of the PV module; and
a controller for measuring a DC voltage across the PV module at an input of the power converter, comparing the measured DC voltage to an overvoltage threshold, determining the measured DC voltage exceeds the overvoltage threshold, and operating the first switch to clamp at least a portion of the DC voltage prior to input to the power converter. 18. The system of claim 17, wherein the first switch is temporarily held in a closed position to clamp the DC voltage. 19. The system of claim 18, further comprising a second switch coupled to a first end of the first switch and alternating operation of the first and second switches such that both are of opposite switching states. 20. The system of claim 17, wherein the first switch is located within the PV module housing. | 2,800 |
11,643 | 11,643 | 15,078,474 | 2,814 | An electronic device and a method of making an electronic device. As non-limiting examples, various aspects of this disclosure provide various methods of making electronic devices, and electronic devices manufactured thereby, that comprise utilizing a compressed interconnection structure (e.g., a compressed solder ball, etc.) in an encapsulating process to form an aperture in an encapsulant. The compressed interconnection structure may then be reformed in the aperture. | 1. An electronic device comprising:
an electronic component comprising a conductive pad; an encapsulating material on the electronic component; an aperture through the encapsulating material that exposes the conductive pad, the aperture defined by an inner surface of the encapsulating material and shaped like a portion of an oblate ellipsoid; and a conductive interconnection structure that extends through the aperture and protrudes from the encapsulating material, is electrically connected to the conductive pad, and is separated from at least a portion of the inner surface of the encapsulating material. 2. The electronic device of claim 1, wherein the volume of the aperture is within 10% of the volume of the conductive interconnection structure. 3. The electronic device of claim 1, wherein the volume of the aperture is the same as the volume of the conductive interconnection structure. 4. The electronic device of claim 1, wherein the aperture is shaped like ¼ to ¾ of an oblate ellipsoid. 5. The electronic device of claim 1, wherein the oblate ellipsoid comprises a first semi-principal axis and a second semi-principal axis that is at least 10% longer than the first semi-principal axis. 6. The electronic device of claim 1, wherein a first portion of the aperture has a first radius of curvature that is less than a radius of curvature of the conductive interconnection structure, and a second portion of the aperture has a second radius of curvature that is greater than the radius of curvature of the conductive interconnection structure. 7. The electronic device of claim 1, wherein the aperture is shaped like an oblate ellipsoid with a flattened top and a flattened bottom. 8. The electronic device of claim 1, wherein the electronic component comprises a semiconductor die. 9. The electronic device of claim 1, wherein the electronic component comprises a signal distribution structure attached to a semiconductor die. 10. The electronic device of claim 1, wherein the conductive interconnection structure is a solder ball. 11. The electronic device of claim 1, wherein the encapsulating material comprises a molding material. 12. The electronic device of claim 1, comprising a substrate and a substrate conductive pad, wherein the conductive interconnection structure is a conductive ball that is connected to the conductive pad and to the substrate conductive pad. 13. An electronic device comprising:
an electronic component comprising a conductive pad; an encapsulating material on the electronic component, wherein the encapsulating material has a top surface and a bottom surface opposite the top surface and that faces the electronic component; an aperture through the encapsulating material that exposes the conductive pad, wherein the aperture is defined by an inner surface of the encapsulating material that has a continually changing upward slope; and a conductive interconnection structure that extends through the aperture and protrudes from the top surface of the encapsulating material, is electrically connected to the conductive pad, and is separated from at least a portion of the inner surface of the encapsulating material. 14. The electronic device of claim 13, wherein the volume of the aperture is within 10% of the volume of the conductive interconnection structure. 15. The electronic device of claim 13, wherein at least a portion of the aperture is shaped like a portion of a compressed sphere. 16. The electronic device of claim 15, wherein the compressed sphere has a vertical height and a horizontal width that is at least 10% greater than the vertical height. 17. The electronic device of claim 13, wherein the electronic component is a semiconductor die and the conductive interconnection structure is a solder ball. 18. An electronic device comprising:
an electronic component comprising a conductive pad; an encapsulating material on the electronic component, wherein the encapsulating material has a top surface and a bottom surface opposite the top surface and that faces the electronic component; an aperture through the encapsulating material that exposes the conductive pad, wherein the aperture is defined by an inner surface of the encapsulating material; and a conductive interconnection structure that extends through the aperture and protrudes from the top surface of the encapsulating material, is electrically connected to the conductive pad, and is separated from at least a portion of the inner surface of the encapsulating material by a gap, wherein the gap between the inner surface of the encapsulating material and the conductive interconnection structure continually increases between a bottom end of the aperture and a point of maximum width of the aperture. 19. The electronic device of claim 18, wherein the volume of the aperture is the same as the volume of the conductive interconnection structure. 20. The electronic device of claim 18, wherein at least a portion of the aperture is shaped like a portion of a compressed sphere. | An electronic device and a method of making an electronic device. As non-limiting examples, various aspects of this disclosure provide various methods of making electronic devices, and electronic devices manufactured thereby, that comprise utilizing a compressed interconnection structure (e.g., a compressed solder ball, etc.) in an encapsulating process to form an aperture in an encapsulant. The compressed interconnection structure may then be reformed in the aperture.1. An electronic device comprising:
an electronic component comprising a conductive pad; an encapsulating material on the electronic component; an aperture through the encapsulating material that exposes the conductive pad, the aperture defined by an inner surface of the encapsulating material and shaped like a portion of an oblate ellipsoid; and a conductive interconnection structure that extends through the aperture and protrudes from the encapsulating material, is electrically connected to the conductive pad, and is separated from at least a portion of the inner surface of the encapsulating material. 2. The electronic device of claim 1, wherein the volume of the aperture is within 10% of the volume of the conductive interconnection structure. 3. The electronic device of claim 1, wherein the volume of the aperture is the same as the volume of the conductive interconnection structure. 4. The electronic device of claim 1, wherein the aperture is shaped like ¼ to ¾ of an oblate ellipsoid. 5. The electronic device of claim 1, wherein the oblate ellipsoid comprises a first semi-principal axis and a second semi-principal axis that is at least 10% longer than the first semi-principal axis. 6. The electronic device of claim 1, wherein a first portion of the aperture has a first radius of curvature that is less than a radius of curvature of the conductive interconnection structure, and a second portion of the aperture has a second radius of curvature that is greater than the radius of curvature of the conductive interconnection structure. 7. The electronic device of claim 1, wherein the aperture is shaped like an oblate ellipsoid with a flattened top and a flattened bottom. 8. The electronic device of claim 1, wherein the electronic component comprises a semiconductor die. 9. The electronic device of claim 1, wherein the electronic component comprises a signal distribution structure attached to a semiconductor die. 10. The electronic device of claim 1, wherein the conductive interconnection structure is a solder ball. 11. The electronic device of claim 1, wherein the encapsulating material comprises a molding material. 12. The electronic device of claim 1, comprising a substrate and a substrate conductive pad, wherein the conductive interconnection structure is a conductive ball that is connected to the conductive pad and to the substrate conductive pad. 13. An electronic device comprising:
an electronic component comprising a conductive pad; an encapsulating material on the electronic component, wherein the encapsulating material has a top surface and a bottom surface opposite the top surface and that faces the electronic component; an aperture through the encapsulating material that exposes the conductive pad, wherein the aperture is defined by an inner surface of the encapsulating material that has a continually changing upward slope; and a conductive interconnection structure that extends through the aperture and protrudes from the top surface of the encapsulating material, is electrically connected to the conductive pad, and is separated from at least a portion of the inner surface of the encapsulating material. 14. The electronic device of claim 13, wherein the volume of the aperture is within 10% of the volume of the conductive interconnection structure. 15. The electronic device of claim 13, wherein at least a portion of the aperture is shaped like a portion of a compressed sphere. 16. The electronic device of claim 15, wherein the compressed sphere has a vertical height and a horizontal width that is at least 10% greater than the vertical height. 17. The electronic device of claim 13, wherein the electronic component is a semiconductor die and the conductive interconnection structure is a solder ball. 18. An electronic device comprising:
an electronic component comprising a conductive pad; an encapsulating material on the electronic component, wherein the encapsulating material has a top surface and a bottom surface opposite the top surface and that faces the electronic component; an aperture through the encapsulating material that exposes the conductive pad, wherein the aperture is defined by an inner surface of the encapsulating material; and a conductive interconnection structure that extends through the aperture and protrudes from the top surface of the encapsulating material, is electrically connected to the conductive pad, and is separated from at least a portion of the inner surface of the encapsulating material by a gap, wherein the gap between the inner surface of the encapsulating material and the conductive interconnection structure continually increases between a bottom end of the aperture and a point of maximum width of the aperture. 19. The electronic device of claim 18, wherein the volume of the aperture is the same as the volume of the conductive interconnection structure. 20. The electronic device of claim 18, wherein at least a portion of the aperture is shaped like a portion of a compressed sphere. | 2,800 |
11,644 | 11,644 | 12,498,277 | 2,815 | LED packages and LED displays utilizing the LED packages are disclosed where the peak emission of the LED display can be tilted or shifted to customize its peak emission to the mounting height or location of the LED display. One embodiment of an LED display comprises a plurality of LED package where the peak emission from at least some of the LED packages is tilted off the package centerline. The LED packages are mounted within the display in such a way as to generate an image having a peak emission that is tilted off the perpendicular emission direction of the display. | 1. A light emitting diode (LED) display, comprising:
a plurality of LED packages, at least some have a peak emission that is tilted off the centerline of the package, said LED packages mounted within said display to generate an image having a peak emission that is tilted off the perpendicular the plane of said display. 2. The LED display of claim 1, where said display is flat and the plane of said display comprises the surface of said display. 3. The LED display of claim 1, where said display is curved, and the plane of said display comprises a tangent plane to the surface of said display. 4. The LED display of claim 1, wherein most of said LED packages have a peak emission that is tilted off their centerline, wherein the amount of tilt for each is substantially the same. 5. The LED display of claim 1, wherein most of said LED packages have a peak emission that is tilted off their centerline, wherein the amount of tilt for some is different from that of the others. 6. The LED display of claim 1, wherein at least some of said LED packages comprise a reflective cup with an LED within said reflective cup, said LED shifted off the center of said reflective cup. 7. The LED display of claim 1, wherein at least some of said LED packages comprise an LED mounted within a reflective cup and an encapsulant covering at least part of said reflective cup, said reflective cup shifted off the perpendicular centerline of said LED package. 8. The LED display of claim 1, wherein at least some of said LED packages comprise an LED mounted within a reflective cup and an encapsulant covering at least part of said reflective cup, said reflective cup shifted off the centerline of said encapsulant. 9. The LED display of claim 1, wherein at least some of said LED packages comprise an LED mounted within a reflective cup and an encapsulant covering at least part of said reflective cup, said reflective cup rotated within said encapsulant. 10. The LED display of claim 9, further comprising a wire lead frame at least partially within said encapsulant, wherein said lead frame is tilted. 11. The LED display of claim 9, further comprising a wire lead frame at least partially within said encapsulant, wherein said reflective cup and said lead frame are arranged approximately on the centerline of said encapsulant. 12. The LED display of claim 1, wherein at least some of said LED packages comprise an LED mounted within a reflective cup wherein said reflective cup is asymmetric. 13. The LED display of claim 1, wherein at least some of said LED packages comprise an LED mounted within a reflective cup and an encapsulant surrounding said reflective cup, wherein said encapsulant is asymmetric. 14. The LED display of claim 1, wherein at least some of said LED packages comprise an LED mounted within a reflective cup, a wire lead frame and an encapsulant surrounding said reflective cup and at least part of said wire lead frame, said encapsulant rotated about said reflective cup and lead frame. 15. The LED display of claim 1, wherein said LED packages comprise surface mount devices. 16. The LED display of claim 1, wherein said display is capable of being mounted above the intended viewers, wherein said tilt in said peak emission of said display comprises a down tilt. 17. A light emitting diode (LED) package, comprising:
an LED within a reflective cup wherein said LED is positioned off the center of said reflective cup to cause a peak emission from said package that is tilted off the package centerline. 18. The LED package of claim 17, further comprising an encapsulant at least partially covering said reflective cup. 19. The LED package of claim 18, further comprising a lens at least partially covering said reflective cup. 20. The LED package of claim 19, wherein the positioning of said LED off the center of said reflective cup causes a tilt in said peak emission in a direction opposite to said LED's off center direction. 21. A light emitting diode (LED) package, comprising:
an LED mounted within a reflective cup and an encapsulant at least partially covering said reflective cup, said reflective cup positioned off the package centerline of said package to cause the peak emission from said package to be tilted off the package centerline. 22. The LED package of claim 21, wherein the positioning of said reflective cup off the package centerline causes a tilt in said peak emission in a direction opposite to said reflective cup's off center direction. 23. A light emitting diode (LED) package, comprising:
an LED mounted within a reflective cup and an encapsulant at least partially covering said reflective cup said encapsulant positioned off the package centerline to cause the peak emission from said package to be tilted off the package centerline. 24. The LED package of claim 23, wherein the positioning of said encapsulant off the package centerline causes a tilt in said peak emission in the same direction as said encapsulant's off center direction. 25. A light emitting diode (LED) package, comprising:
an LED mounted within a reflective cup and an encapsulant at least partially covering said reflective cup, said reflective cup rotated in relation to the package centerline to cause the peak emission from said package to be tilted off the package centerline. 26. The LED package of claim 25, wherein said encapsulant comprises a lens. 27. The LED package of claim 25, wherein said tilt of said peak emission is in the same direction as said rotation of said reflective cup. 28. The LED package of claim 25, further comprising a wire lead frame at least partially within said encapsulant, wherein said lead frame is tilted. 29. The LED package of claim 25, further comprising a wire lead frame at least partially within said encapsulant, wherein said encapsulant and said lead frame are arranged approximately on said package centerline. 30. A light emitting diode (LED) package, comprising:
an LED mounted within a reflective cup wherein said reflective cup is asymmetric to cause the peak emission from said package to be tilted off the package centerline. 31. The LED package of claim 30, wherein said reflective cup comprises an angled reflective surface having at least one portion with a different angle to cause said peak emission tilt. 32. The LED package of claim 30, wherein said peak emission tilt is opposite said reflective cup asymmetry. 33. The LED package of claim 30, wherein said peak emission tilt is in the same direction as said reflective cup asymmetry. 34. The LED package of claim 30, wherein said reflective cup has at least one reflective cup sidewall portion with a different height than the remainder of said reflective cup sidewall. 35. The LED package of claim 30, wherein said reflective cup has at least one reflective surface having portions with different angles of reflection. 36. The LED package of claim 30, wherein said reflective cup has at least one reflective surface having portions with different curvatures. 37. A light emitting diode (LED) package, comprising:
an LED mounted within a reflective cup and an encapsulant at least partially covering said reflective cup, wherein said encapsulant is asymmetric to cause the peak emission from said package to be tilted off the package centerline. 38. The LED package of claim 37, wherein said encapsulant asymmetry comprises portions having different curvatures. 39. The LED package of claim 37, wherein said peak emission tilt is opposite said encapsulant asymmetry. 40. The LED package of claim 37, wherein said peak emission tilt is in the same direction as said encapsulant asymmetry. 41. A light emitting diode (LED) package, comprising:
an LED mounted within a reflective cup; and an encapsulant at least partially covering said reflective cup, said encapsulant rotated relative to said package centerline to cause said emission tilt. 42. The LED package of claim 41, wherein said reflective cup is on and substantially perpendicular to said package centerline. 43. The LED package of claim 41, further comprising a wire lead frame on said package centerline. 44. A display, comprising:
a plurality of emitters, at least some have a peak emission that is tilted of the emitter centerline, said display capable of being mounted in a position off a viewer's direct line of sight, said emitters mounted within said display to generate an image having a peak emission that is tilted in the direction of said viewer. 45. The display of claim 44, wherein at least some of said emitters comprise LED packages. 46. The display of claim 44, wherein the amount of peak emission tilt for each of said emitters is substantially the same. 47. The display of claim 44, wherein the amount of tilt for at least some of said emitters is different from that of the others. 48. The display of claim 44, wherein at least some of said LED packages comprise a reflective cup with an LED within said reflective cup, said LED shifted off the center of said reflective cup. 49. The display of claim 44, wherein at least some of said LED packages comprise an LED mounted within a reflective cup and an encapsulant covering at least part of said reflective cup, said reflective cup shifted off the perpendicular centerline of said LED package. 50. The display of claim 44, wherein at least some of said LED packages comprise an LED mounted within a reflective cup and an encapsulant covering at least part of said reflective cup, said reflective cup shifted off the centerline of said encapsulant. 51. The display of claim 44, wherein at least some of said LED packages comprise an LED mounted within a reflective cup and an encapsulant covering at least part of said reflective cup, said reflective cup rotated within said encapsulant. 52. The display of claim 44, wherein at least some of said LED packages comprise an LED mounted within a reflective cup wherein said reflective cup is asymmetric. 53. The display of claim 44, wherein at least some of said LED packages comprise an LED mounted within a reflective cup and an encapsulant surrounding said reflective cup, wherein said encapsulant is asymmetric. 54. The LED display of claim 44, wherein at least some of said LED packages comprise an LED mounted within a reflective cup, a wire lead frame and an encapsulant surrounding said reflective cup and at least part of said wire lead frame, said encapsulant rotated about said reflective cup and lead frame. | LED packages and LED displays utilizing the LED packages are disclosed where the peak emission of the LED display can be tilted or shifted to customize its peak emission to the mounting height or location of the LED display. One embodiment of an LED display comprises a plurality of LED package where the peak emission from at least some of the LED packages is tilted off the package centerline. The LED packages are mounted within the display in such a way as to generate an image having a peak emission that is tilted off the perpendicular emission direction of the display.1. A light emitting diode (LED) display, comprising:
a plurality of LED packages, at least some have a peak emission that is tilted off the centerline of the package, said LED packages mounted within said display to generate an image having a peak emission that is tilted off the perpendicular the plane of said display. 2. The LED display of claim 1, where said display is flat and the plane of said display comprises the surface of said display. 3. The LED display of claim 1, where said display is curved, and the plane of said display comprises a tangent plane to the surface of said display. 4. The LED display of claim 1, wherein most of said LED packages have a peak emission that is tilted off their centerline, wherein the amount of tilt for each is substantially the same. 5. The LED display of claim 1, wherein most of said LED packages have a peak emission that is tilted off their centerline, wherein the amount of tilt for some is different from that of the others. 6. The LED display of claim 1, wherein at least some of said LED packages comprise a reflective cup with an LED within said reflective cup, said LED shifted off the center of said reflective cup. 7. The LED display of claim 1, wherein at least some of said LED packages comprise an LED mounted within a reflective cup and an encapsulant covering at least part of said reflective cup, said reflective cup shifted off the perpendicular centerline of said LED package. 8. The LED display of claim 1, wherein at least some of said LED packages comprise an LED mounted within a reflective cup and an encapsulant covering at least part of said reflective cup, said reflective cup shifted off the centerline of said encapsulant. 9. The LED display of claim 1, wherein at least some of said LED packages comprise an LED mounted within a reflective cup and an encapsulant covering at least part of said reflective cup, said reflective cup rotated within said encapsulant. 10. The LED display of claim 9, further comprising a wire lead frame at least partially within said encapsulant, wherein said lead frame is tilted. 11. The LED display of claim 9, further comprising a wire lead frame at least partially within said encapsulant, wherein said reflective cup and said lead frame are arranged approximately on the centerline of said encapsulant. 12. The LED display of claim 1, wherein at least some of said LED packages comprise an LED mounted within a reflective cup wherein said reflective cup is asymmetric. 13. The LED display of claim 1, wherein at least some of said LED packages comprise an LED mounted within a reflective cup and an encapsulant surrounding said reflective cup, wherein said encapsulant is asymmetric. 14. The LED display of claim 1, wherein at least some of said LED packages comprise an LED mounted within a reflective cup, a wire lead frame and an encapsulant surrounding said reflective cup and at least part of said wire lead frame, said encapsulant rotated about said reflective cup and lead frame. 15. The LED display of claim 1, wherein said LED packages comprise surface mount devices. 16. The LED display of claim 1, wherein said display is capable of being mounted above the intended viewers, wherein said tilt in said peak emission of said display comprises a down tilt. 17. A light emitting diode (LED) package, comprising:
an LED within a reflective cup wherein said LED is positioned off the center of said reflective cup to cause a peak emission from said package that is tilted off the package centerline. 18. The LED package of claim 17, further comprising an encapsulant at least partially covering said reflective cup. 19. The LED package of claim 18, further comprising a lens at least partially covering said reflective cup. 20. The LED package of claim 19, wherein the positioning of said LED off the center of said reflective cup causes a tilt in said peak emission in a direction opposite to said LED's off center direction. 21. A light emitting diode (LED) package, comprising:
an LED mounted within a reflective cup and an encapsulant at least partially covering said reflective cup, said reflective cup positioned off the package centerline of said package to cause the peak emission from said package to be tilted off the package centerline. 22. The LED package of claim 21, wherein the positioning of said reflective cup off the package centerline causes a tilt in said peak emission in a direction opposite to said reflective cup's off center direction. 23. A light emitting diode (LED) package, comprising:
an LED mounted within a reflective cup and an encapsulant at least partially covering said reflective cup said encapsulant positioned off the package centerline to cause the peak emission from said package to be tilted off the package centerline. 24. The LED package of claim 23, wherein the positioning of said encapsulant off the package centerline causes a tilt in said peak emission in the same direction as said encapsulant's off center direction. 25. A light emitting diode (LED) package, comprising:
an LED mounted within a reflective cup and an encapsulant at least partially covering said reflective cup, said reflective cup rotated in relation to the package centerline to cause the peak emission from said package to be tilted off the package centerline. 26. The LED package of claim 25, wherein said encapsulant comprises a lens. 27. The LED package of claim 25, wherein said tilt of said peak emission is in the same direction as said rotation of said reflective cup. 28. The LED package of claim 25, further comprising a wire lead frame at least partially within said encapsulant, wherein said lead frame is tilted. 29. The LED package of claim 25, further comprising a wire lead frame at least partially within said encapsulant, wherein said encapsulant and said lead frame are arranged approximately on said package centerline. 30. A light emitting diode (LED) package, comprising:
an LED mounted within a reflective cup wherein said reflective cup is asymmetric to cause the peak emission from said package to be tilted off the package centerline. 31. The LED package of claim 30, wherein said reflective cup comprises an angled reflective surface having at least one portion with a different angle to cause said peak emission tilt. 32. The LED package of claim 30, wherein said peak emission tilt is opposite said reflective cup asymmetry. 33. The LED package of claim 30, wherein said peak emission tilt is in the same direction as said reflective cup asymmetry. 34. The LED package of claim 30, wherein said reflective cup has at least one reflective cup sidewall portion with a different height than the remainder of said reflective cup sidewall. 35. The LED package of claim 30, wherein said reflective cup has at least one reflective surface having portions with different angles of reflection. 36. The LED package of claim 30, wherein said reflective cup has at least one reflective surface having portions with different curvatures. 37. A light emitting diode (LED) package, comprising:
an LED mounted within a reflective cup and an encapsulant at least partially covering said reflective cup, wherein said encapsulant is asymmetric to cause the peak emission from said package to be tilted off the package centerline. 38. The LED package of claim 37, wherein said encapsulant asymmetry comprises portions having different curvatures. 39. The LED package of claim 37, wherein said peak emission tilt is opposite said encapsulant asymmetry. 40. The LED package of claim 37, wherein said peak emission tilt is in the same direction as said encapsulant asymmetry. 41. A light emitting diode (LED) package, comprising:
an LED mounted within a reflective cup; and an encapsulant at least partially covering said reflective cup, said encapsulant rotated relative to said package centerline to cause said emission tilt. 42. The LED package of claim 41, wherein said reflective cup is on and substantially perpendicular to said package centerline. 43. The LED package of claim 41, further comprising a wire lead frame on said package centerline. 44. A display, comprising:
a plurality of emitters, at least some have a peak emission that is tilted of the emitter centerline, said display capable of being mounted in a position off a viewer's direct line of sight, said emitters mounted within said display to generate an image having a peak emission that is tilted in the direction of said viewer. 45. The display of claim 44, wherein at least some of said emitters comprise LED packages. 46. The display of claim 44, wherein the amount of peak emission tilt for each of said emitters is substantially the same. 47. The display of claim 44, wherein the amount of tilt for at least some of said emitters is different from that of the others. 48. The display of claim 44, wherein at least some of said LED packages comprise a reflective cup with an LED within said reflective cup, said LED shifted off the center of said reflective cup. 49. The display of claim 44, wherein at least some of said LED packages comprise an LED mounted within a reflective cup and an encapsulant covering at least part of said reflective cup, said reflective cup shifted off the perpendicular centerline of said LED package. 50. The display of claim 44, wherein at least some of said LED packages comprise an LED mounted within a reflective cup and an encapsulant covering at least part of said reflective cup, said reflective cup shifted off the centerline of said encapsulant. 51. The display of claim 44, wherein at least some of said LED packages comprise an LED mounted within a reflective cup and an encapsulant covering at least part of said reflective cup, said reflective cup rotated within said encapsulant. 52. The display of claim 44, wherein at least some of said LED packages comprise an LED mounted within a reflective cup wherein said reflective cup is asymmetric. 53. The display of claim 44, wherein at least some of said LED packages comprise an LED mounted within a reflective cup and an encapsulant surrounding said reflective cup, wherein said encapsulant is asymmetric. 54. The LED display of claim 44, wherein at least some of said LED packages comprise an LED mounted within a reflective cup, a wire lead frame and an encapsulant surrounding said reflective cup and at least part of said wire lead frame, said encapsulant rotated about said reflective cup and lead frame. | 2,800 |
11,645 | 11,645 | 14,341,170 | 2,859 | A portable charging assembly includes a housing. A lever is movably coupled to the housing. The lever may be depressed. A generator is coupled to the housing. A drive gear is movably coupled to the housing. The drive gear is movably coupled to the generator. The lever engages the drive gear when the lever is depressed. The drive gear moves the generator. The generator produces an electrical current when the lever is depressed. A battery is coupled to the housing. The battery is operationally coupled to the generator. The battery is charged by the generator. A pair of power ports is coupled to the housing. The power ports are operationally coupled to the battery. The power ports are selectively operationally coupled to an external electronic device. The battery charges the external electronic device. | 1. A portable charging assembly comprising:
a housing; a lever movably coupled to said housing such that said lever is configured to be depressed; a generator coupled to said housing; a drive gear movably coupled to said housing, said drive gear being movably coupled to said generator, said lever engaging said drive gear when said lever is depressed such that said drive gear moves said generator, said generator producing an electrical current when said lever is depressed; a battery coupled to said housing, said battery being operationally coupled to said generator such that said battery is charged by said generator; a pair of power ports coupled to said housing, said power ports being operationally coupled to said battery, said power ports being selectively operationally coupled to an external electronic device such that said battery charges the external electronic device; and a photovoltaic skin wrapped around an outer wall of said housing such that said photovoltaic skin is configured to absorb solar energy. 2. The portable charging assembly according to claim 1, further comprising said lever having a front end and a back end, said front end of said lever being hingedly coupled to said housing such that said back end of said lever is configured to be urged downwardly toward said housing. 3. The portable charging assembly according to claim 2, further comprising a rail gear having a free end and a coupled end, said coupled end of said rail gear being coupled to said back end of said lever such that said rail gear extends downwardly from said lever into said housing. 4. The portable charging assembly according to claim 1, further comprising said drive gear comprising a primary portion of said drive gear extending laterally away from a secondary portion of said drive gear. 5. The portable charging assembly according to claim 4, further comprising said drive gear being rotatably coupled to said housing such that said drive gear is positioned within an interior of said housing, said secondary portion of said drive gear engaging said generator. 6. The portable charging assembly according to claim 5, further comprising a rail gear engaging said primary portion of said drive gear, said rail gear rotating said drive gear when a back end of said lever is depressed such that said drive gear rotates said generator. 7. The portable charging assembly according to claim 1, further comprising said battery being electrically coupled to said generator. 8. The portable charging assembly according to claim 1, further comprising said power ports being electrically coupled to said battery, said power ports being selectively electrically coupled to the external electronic device. 9. (canceled) 10. The portable charging assembly according to claim 1, further comprising said photovoltaic skin being electrically coupled to said battery, said photovoltaic skin producing an electrical current such that said photovoltaic skin charges said battery. 11. A portable charging assembly comprising:
a housing; a lever having a front end and a back end, said front end of said lever being hingedly coupled to said housing such that said back end of said lever is configured to be urged downwardly toward said housing; a rail gear having a free end and a coupled end, said coupled end of said rail gear being coupled to said back end of said lever such that said rail gear extends downwardly from said lever into said housing; a generator coupled to said housing; a drive gear comprising a primary portion of said drive gear extending laterally away from a secondary portion of said drive gear, said drive gear being rotatably coupled to said housing such that said drive gear is positioned within an interior of said housing, said secondary portion of said drive gear engaging said generator; said rail gear engaging said primary portion of said drive gear, said rail gear rotating said drive gear when said back end of said lever is depressed such that said drive gear rotates said generator wherein said generator produces an electrical current; a photovoltaic skin wrapped around an outer wall of said housing such that said photovoltaic skin is configured to absorb solar energy wherein said photovoltaic skin produces an electrical current, said photovoltaic skin extending from a back side of said housing toward a front side of said housing and being positioned on opposite outer faces of said housing; a battery coupled to said housing, said battery being electrically coupled to said generator and said photovoltaic skin such that said battery is charged by said generator and said photovoltaic skin; and a pair of power ports coupled to said housing, said power ports being electrically coupled to said battery, said power ports being selectively electrically coupled to an external electronic device such that said battery charges the external electronic device. | A portable charging assembly includes a housing. A lever is movably coupled to the housing. The lever may be depressed. A generator is coupled to the housing. A drive gear is movably coupled to the housing. The drive gear is movably coupled to the generator. The lever engages the drive gear when the lever is depressed. The drive gear moves the generator. The generator produces an electrical current when the lever is depressed. A battery is coupled to the housing. The battery is operationally coupled to the generator. The battery is charged by the generator. A pair of power ports is coupled to the housing. The power ports are operationally coupled to the battery. The power ports are selectively operationally coupled to an external electronic device. The battery charges the external electronic device.1. A portable charging assembly comprising:
a housing; a lever movably coupled to said housing such that said lever is configured to be depressed; a generator coupled to said housing; a drive gear movably coupled to said housing, said drive gear being movably coupled to said generator, said lever engaging said drive gear when said lever is depressed such that said drive gear moves said generator, said generator producing an electrical current when said lever is depressed; a battery coupled to said housing, said battery being operationally coupled to said generator such that said battery is charged by said generator; a pair of power ports coupled to said housing, said power ports being operationally coupled to said battery, said power ports being selectively operationally coupled to an external electronic device such that said battery charges the external electronic device; and a photovoltaic skin wrapped around an outer wall of said housing such that said photovoltaic skin is configured to absorb solar energy. 2. The portable charging assembly according to claim 1, further comprising said lever having a front end and a back end, said front end of said lever being hingedly coupled to said housing such that said back end of said lever is configured to be urged downwardly toward said housing. 3. The portable charging assembly according to claim 2, further comprising a rail gear having a free end and a coupled end, said coupled end of said rail gear being coupled to said back end of said lever such that said rail gear extends downwardly from said lever into said housing. 4. The portable charging assembly according to claim 1, further comprising said drive gear comprising a primary portion of said drive gear extending laterally away from a secondary portion of said drive gear. 5. The portable charging assembly according to claim 4, further comprising said drive gear being rotatably coupled to said housing such that said drive gear is positioned within an interior of said housing, said secondary portion of said drive gear engaging said generator. 6. The portable charging assembly according to claim 5, further comprising a rail gear engaging said primary portion of said drive gear, said rail gear rotating said drive gear when a back end of said lever is depressed such that said drive gear rotates said generator. 7. The portable charging assembly according to claim 1, further comprising said battery being electrically coupled to said generator. 8. The portable charging assembly according to claim 1, further comprising said power ports being electrically coupled to said battery, said power ports being selectively electrically coupled to the external electronic device. 9. (canceled) 10. The portable charging assembly according to claim 1, further comprising said photovoltaic skin being electrically coupled to said battery, said photovoltaic skin producing an electrical current such that said photovoltaic skin charges said battery. 11. A portable charging assembly comprising:
a housing; a lever having a front end and a back end, said front end of said lever being hingedly coupled to said housing such that said back end of said lever is configured to be urged downwardly toward said housing; a rail gear having a free end and a coupled end, said coupled end of said rail gear being coupled to said back end of said lever such that said rail gear extends downwardly from said lever into said housing; a generator coupled to said housing; a drive gear comprising a primary portion of said drive gear extending laterally away from a secondary portion of said drive gear, said drive gear being rotatably coupled to said housing such that said drive gear is positioned within an interior of said housing, said secondary portion of said drive gear engaging said generator; said rail gear engaging said primary portion of said drive gear, said rail gear rotating said drive gear when said back end of said lever is depressed such that said drive gear rotates said generator wherein said generator produces an electrical current; a photovoltaic skin wrapped around an outer wall of said housing such that said photovoltaic skin is configured to absorb solar energy wherein said photovoltaic skin produces an electrical current, said photovoltaic skin extending from a back side of said housing toward a front side of said housing and being positioned on opposite outer faces of said housing; a battery coupled to said housing, said battery being electrically coupled to said generator and said photovoltaic skin such that said battery is charged by said generator and said photovoltaic skin; and a pair of power ports coupled to said housing, said power ports being electrically coupled to said battery, said power ports being selectively electrically coupled to an external electronic device such that said battery charges the external electronic device. | 2,800 |
11,646 | 11,646 | 14,762,637 | 2,872 | Retroreflective article having tailored optical properties and method for making the same. Retroreflective articles according to the present application comprise deformed cube corner elements having reduced optically active volume and reduced active volume height. Exemplary retroreflective articles have at least one of minimized contrast caused by seam welds, tiling lines or defects under retroreflective conditions, markings discernible at different viewing conditions and reduced overall retroreflectivity. | 1-14. (canceled) 15. A retroreflective sheeting comprising:
a structured surface including cube corner elements, wherein at least some of the cube corner elements are thermally sheared cube corner elements; and wherein the thermally sheared cube corner elements form a grayscale marking. 16. The retroreflective sheeting of claim 15, wherein the grayscale marking further includes:
a first pixel comprising a first plurality of thermally sheared cube corner elements having a first reduced optically active volume; and a second pixel comprising a second plurality of thermally sheared cube corner elements having a second reduced optically active volume, different from the first reduced optically active volume. 17. The retroreflective sheeting of claim 1, wherein the grayscale marking is one of a graphic and photographic image. 18. The retroreflective sheeting of claim 15, wherein the grayscale marking forms a security mark. 19. The retroreflective sheeting of claim 18, wherein the grayscale marking is one of a shape, figure, symbol, design, letter, number, bar code, QR code, alphanumeric character, and indicia. 20. The retroreflective sheeting of claim 15, wherein the cube corner elements comprise a thermoplastic polymer. 21. (canceled) 22. The retroreflective sheeting of claim 15, wherein each of the thermally sheared cube corner elements have a reduced optically active volume of at least 50%. 23. (canceled) 24. The retroreflective sheeting of claim 15, further comprising a reflective layer adjacent the cube corner elements. 25. (canceled) 26. A retroreflective sheeting comprising:
a structured surface including an array of deformed cube corner elements having reduced optically active volumes, the array comprising multiple pixels, a first pixel comprising cube corner elements having a first total light return value and a second pixel, adjacent to the first pixel, comprising cube corner elements having a second total light return value, different from the first total light return value. 27. The retroreflective sheeting of claim 26, wherein the first and second pixels form a marking. 28. The retroreflective sheeting of claim 27, wherein the marking is a grayscale marking. 29. The retroreflective sheeting of claim, 26 wherein the marking forms a security mark. 30. The retroreflective sheeting of claim 29, wherein the security mark is one of a shape, figure, symbol, design, letter, number, bar code, QR code, alphanumeric character, and indicia. 31. The retroreflective sheeting of claim 26, wherein the cube corner elements comprise a thermoplastic polymer. 32-45. (canceled) 46. A method of making a retroreflective article comprising:
providing a retroreflective sheeting having a structured surface comprising a plurality of cube corner elements; and thermally shearing at least some of the cube corner elements; wherein the thermally sheared cube corner elements form a grayscale marking. 47. The method of claim 46, wherein the grayscale marking forms a security mark. 48. The method of claim 46, wherein the grayscale marking is one of a shape, figure, symbol, design, letter, number, bar code, QR code, alphanumeric character, and indicia. 49. The method of claim 46, wherein the cube corner elements comprise a thermoplastic polymer. 50. The method of claim 49, wherein the thermoplastic polymer is one of poly(carbonate), poly(methylmethacrylate), poly(ethyleneterephthalate), polyurethane, ethylene copolymers and ionomers thereof, and mixtures thereof 51. The method of claim 46, wherein each thermally sheared cube corner element has a reduced optically active volume of at least 50 percent. 52. The method of claim 46, wherein each thermally sheared cube corner element has a displaced volume height between about 1 and about 30 percent. 53. The method of claim 46, wherein the grayscale marking is formed using a thermal printer in direct writing mode. | Retroreflective article having tailored optical properties and method for making the same. Retroreflective articles according to the present application comprise deformed cube corner elements having reduced optically active volume and reduced active volume height. Exemplary retroreflective articles have at least one of minimized contrast caused by seam welds, tiling lines or defects under retroreflective conditions, markings discernible at different viewing conditions and reduced overall retroreflectivity.1-14. (canceled) 15. A retroreflective sheeting comprising:
a structured surface including cube corner elements, wherein at least some of the cube corner elements are thermally sheared cube corner elements; and wherein the thermally sheared cube corner elements form a grayscale marking. 16. The retroreflective sheeting of claim 15, wherein the grayscale marking further includes:
a first pixel comprising a first plurality of thermally sheared cube corner elements having a first reduced optically active volume; and a second pixel comprising a second plurality of thermally sheared cube corner elements having a second reduced optically active volume, different from the first reduced optically active volume. 17. The retroreflective sheeting of claim 1, wherein the grayscale marking is one of a graphic and photographic image. 18. The retroreflective sheeting of claim 15, wherein the grayscale marking forms a security mark. 19. The retroreflective sheeting of claim 18, wherein the grayscale marking is one of a shape, figure, symbol, design, letter, number, bar code, QR code, alphanumeric character, and indicia. 20. The retroreflective sheeting of claim 15, wherein the cube corner elements comprise a thermoplastic polymer. 21. (canceled) 22. The retroreflective sheeting of claim 15, wherein each of the thermally sheared cube corner elements have a reduced optically active volume of at least 50%. 23. (canceled) 24. The retroreflective sheeting of claim 15, further comprising a reflective layer adjacent the cube corner elements. 25. (canceled) 26. A retroreflective sheeting comprising:
a structured surface including an array of deformed cube corner elements having reduced optically active volumes, the array comprising multiple pixels, a first pixel comprising cube corner elements having a first total light return value and a second pixel, adjacent to the first pixel, comprising cube corner elements having a second total light return value, different from the first total light return value. 27. The retroreflective sheeting of claim 26, wherein the first and second pixels form a marking. 28. The retroreflective sheeting of claim 27, wherein the marking is a grayscale marking. 29. The retroreflective sheeting of claim, 26 wherein the marking forms a security mark. 30. The retroreflective sheeting of claim 29, wherein the security mark is one of a shape, figure, symbol, design, letter, number, bar code, QR code, alphanumeric character, and indicia. 31. The retroreflective sheeting of claim 26, wherein the cube corner elements comprise a thermoplastic polymer. 32-45. (canceled) 46. A method of making a retroreflective article comprising:
providing a retroreflective sheeting having a structured surface comprising a plurality of cube corner elements; and thermally shearing at least some of the cube corner elements; wherein the thermally sheared cube corner elements form a grayscale marking. 47. The method of claim 46, wherein the grayscale marking forms a security mark. 48. The method of claim 46, wherein the grayscale marking is one of a shape, figure, symbol, design, letter, number, bar code, QR code, alphanumeric character, and indicia. 49. The method of claim 46, wherein the cube corner elements comprise a thermoplastic polymer. 50. The method of claim 49, wherein the thermoplastic polymer is one of poly(carbonate), poly(methylmethacrylate), poly(ethyleneterephthalate), polyurethane, ethylene copolymers and ionomers thereof, and mixtures thereof 51. The method of claim 46, wherein each thermally sheared cube corner element has a reduced optically active volume of at least 50 percent. 52. The method of claim 46, wherein each thermally sheared cube corner element has a displaced volume height between about 1 and about 30 percent. 53. The method of claim 46, wherein the grayscale marking is formed using a thermal printer in direct writing mode. | 2,800 |
11,647 | 11,647 | 15,507,889 | 2,891 | LED lighting elements are provided over a first conductive layer, each comprising a pad with top and bottom electrical contacts. A spray coating fills the spaces between the LED lighting elements. It also initially covers the LED lighting elements until a top portion of the sprayed material is removed to reveal the LED lighting element top contact. A second conductive layer is formed over the sprayed material and the revealed top contact, the second conductive layer being connected to a second electrical terminal. | 1. A method of applying a lighting arrangement to a surface, comprising:
forming a first conductive layer over the surface, the conductive layer being for connection to a first electrical terminal; applying an array of LED lighting elements over the first conductive layer, each comprising a pad with top and bottom electrical contacts, wherein the top contact comprises a projecting contact bump, wherein the LED lighting elements are applied such that at least a fraction thereof are upwardly facing with their top contacts facing away from the surface; spray paint coating to fill the spaces between the LED lighting elements and cover the LED lighting elements with sprayed paint; removing a top portion of the sprayed paint thereby to reveal the contact bumps for the upwardly facing LED lighting elements and to form light output windows for the upwardly facing LED lighting elements; and forming a second conductive layer over the sprayed paint and the revealed contact bumps, the second conductive layer being for connection to a second electrical terminal. 2. A method as claimed in claim 1, wherein the first conductive layer is sprayed. 3. A method as claimed in claim 1, wherein:
the LED lighting elements have a ratio of the square root of the pad area to the pad thickness which is more than 2, for example more than 3, for example more than 4; and/or the LED lighting elements have an area less than 10000(μm)2 and a thickness less than 50 μm. 4. A method as claimed in claim 1, wherein the LED lighting elements are applied while the first conductive layer is tacky. 5. A method as claimed in claim 1, wherein the LED lighting elements are applied by particle blasting, jetting or foil transfer. 6. A method as claimed in claim 1, wherein removing a top portion comprises sanding. 7. A method as claimed in claim 1, wherein forming the second conductive layer comprises spraying a transparent conductive layer. 8. A method as claimed in claim 1, further comprising applying a transparent protective coating over the second conductive layer. 9. A method as claimed in claim 1, wherein the first conductor layer is patterned to define separately addressable regions. 10. A method as claimed in claim 1, wherein the surface comprises an automobile body panel. 11. A surface coated with a lighting arrangement, comprising:
a first conductive layer over the surface, the first conductive layer being for connection to a first electrical terminal; an array of LED lighting elements over the first conductive layer, each comprising a pad with top and bottom electrical contacts, wherein at least a fraction of the LED lighting elements are upwardly facing with their top contacts facing away from the surface; a spray paint coating which fills the spaces between the LED lighting elements, and partially covers the LED lighting elements but with contacts of the upwardly facing LED lighting elements exposed and with light output windows formed in the spray paint coating for the upwardly facing LED lighting elements; and a second conductive layer over the spray paint coating and the exposed contacts, the second conductive layer being for connection to a second electrical terminal. 12. A surface coated with a lighting arrangement as claimed in claim 11, wherein:
the LED lighting elements have a ratio of the square root of the pad area to the pad thickness which is more than 2, for example more than 3, for example more than 4; and/or the LED lighting elements have an area less than 10000(μm)2 and a thickness less than 50 μm. 13. A surface coated with a lighting arrangement as claimed in claim 11, wherein the LED lighting elements comprise an optical output cover over the top contact. 14. A surface coated with a lighting arrangement as claimed in claim 10 further comprising a transparent protective coating over the second conductive layer. 15. A surface coated with a lighting arrangement as claimed in claim 10 comprising an automobile body panel. | LED lighting elements are provided over a first conductive layer, each comprising a pad with top and bottom electrical contacts. A spray coating fills the spaces between the LED lighting elements. It also initially covers the LED lighting elements until a top portion of the sprayed material is removed to reveal the LED lighting element top contact. A second conductive layer is formed over the sprayed material and the revealed top contact, the second conductive layer being connected to a second electrical terminal.1. A method of applying a lighting arrangement to a surface, comprising:
forming a first conductive layer over the surface, the conductive layer being for connection to a first electrical terminal; applying an array of LED lighting elements over the first conductive layer, each comprising a pad with top and bottom electrical contacts, wherein the top contact comprises a projecting contact bump, wherein the LED lighting elements are applied such that at least a fraction thereof are upwardly facing with their top contacts facing away from the surface; spray paint coating to fill the spaces between the LED lighting elements and cover the LED lighting elements with sprayed paint; removing a top portion of the sprayed paint thereby to reveal the contact bumps for the upwardly facing LED lighting elements and to form light output windows for the upwardly facing LED lighting elements; and forming a second conductive layer over the sprayed paint and the revealed contact bumps, the second conductive layer being for connection to a second electrical terminal. 2. A method as claimed in claim 1, wherein the first conductive layer is sprayed. 3. A method as claimed in claim 1, wherein:
the LED lighting elements have a ratio of the square root of the pad area to the pad thickness which is more than 2, for example more than 3, for example more than 4; and/or the LED lighting elements have an area less than 10000(μm)2 and a thickness less than 50 μm. 4. A method as claimed in claim 1, wherein the LED lighting elements are applied while the first conductive layer is tacky. 5. A method as claimed in claim 1, wherein the LED lighting elements are applied by particle blasting, jetting or foil transfer. 6. A method as claimed in claim 1, wherein removing a top portion comprises sanding. 7. A method as claimed in claim 1, wherein forming the second conductive layer comprises spraying a transparent conductive layer. 8. A method as claimed in claim 1, further comprising applying a transparent protective coating over the second conductive layer. 9. A method as claimed in claim 1, wherein the first conductor layer is patterned to define separately addressable regions. 10. A method as claimed in claim 1, wherein the surface comprises an automobile body panel. 11. A surface coated with a lighting arrangement, comprising:
a first conductive layer over the surface, the first conductive layer being for connection to a first electrical terminal; an array of LED lighting elements over the first conductive layer, each comprising a pad with top and bottom electrical contacts, wherein at least a fraction of the LED lighting elements are upwardly facing with their top contacts facing away from the surface; a spray paint coating which fills the spaces between the LED lighting elements, and partially covers the LED lighting elements but with contacts of the upwardly facing LED lighting elements exposed and with light output windows formed in the spray paint coating for the upwardly facing LED lighting elements; and a second conductive layer over the spray paint coating and the exposed contacts, the second conductive layer being for connection to a second electrical terminal. 12. A surface coated with a lighting arrangement as claimed in claim 11, wherein:
the LED lighting elements have a ratio of the square root of the pad area to the pad thickness which is more than 2, for example more than 3, for example more than 4; and/or the LED lighting elements have an area less than 10000(μm)2 and a thickness less than 50 μm. 13. A surface coated with a lighting arrangement as claimed in claim 11, wherein the LED lighting elements comprise an optical output cover over the top contact. 14. A surface coated with a lighting arrangement as claimed in claim 10 further comprising a transparent protective coating over the second conductive layer. 15. A surface coated with a lighting arrangement as claimed in claim 10 comprising an automobile body panel. | 2,800 |
11,648 | 11,648 | 15,641,380 | 2,844 | A luminaire for use in a lighting apparatus comprising a plurality of luminaires and a computerized device comprising a plurality of lights and a controller configured to communicate with the computerized device, and coupled to the plurality of lights, and configured to operate the luminaire to emit source light, the source light being characterized by a dominant source light wavelength that varies with time within a range from 390 nanometers to 750 nanometers. The controller is configured to operate the plurality of lights to emit a source light with a different dominant source light wavelength than the source light of another luminaire in the lighting apparatus and combine with the source light emitted by the at least one other luminaire to form a combined light at a distance from the luminaire, receive a lighting scenario from the computerized device, and operate the luminaire responsive to the lighting scenario. | 1. A luminaire for use in a lighting apparatus comprising a plurality of luminaires and a computerized device, the luminaire comprising:
a plurality of lights; and a controller, configured to communicate with the computerized device, and coupled to the plurality of lights, and configured to operate the luminaire to emit source light, the source light being characterized by a dominant source light wavelength within a range from 390 nanometers to 750 nanometers; wherein the controller is configured to operate the plurality of lights to emit a source light with a different dominant source light wavelength than the source light of at least one other luminaire in the lighting apparatus, and such that the source light emitted by the luminaire is combined with the source light emitted by the at least one other luminaire to form a combined light at a distance from the luminaire defined as a combining distance; wherein the dominant source light wavelength of the luminaire is variable with time; and wherein the controller is configured to receive a lighting scenario from the computerized device placed in electronic communication with the controller; and wherein the controller is programmable to operate the luminaire responsive to the lighting scenario received from the remote computerized device. 2. The luminaire according to claim 1 wherein each of the plurality of lights comprises an LED. 3. The luminaire according to claim 1 wherein the combined light is a white light. 4. The luminaire according to claim 1 wherein the combined light comprises a plurality of wavelengths that are variable with time. 5. The luminaire according to claim 1 wherein the controller is operable to operate the luminaire such that a selected wavelength is persistently included in the source light. 6. The luminaire according to claim 1 wherein the controller is configured to operate the plurality of lights to emit a source light comprising two wavelengths; and wherein the source light has a non-white color associated therewith. 7. The luminaire according to claim 1 further comprising a locating device operable to determine a location of the luminaire, defining a determined location; wherein the luminaire is operable to transmit the determined location to the computerized device. 8. The luminaire according to claim 7 wherein the controller is configured to receive a lighting scenario from the computerized device responsive to the determined locations transmitted to the computerized device. 9. The luminaire according to claim 7 wherein the locating device is operable to determine the determined location with respect to at least one of an adjacent luminaire, the plurality of luminaires, and a volume into which the source light is emitted. 10. The luminaire according to claim 7 wherein the locating device is operable to detect an interfering object within a volume into which the source light is emitted. | A luminaire for use in a lighting apparatus comprising a plurality of luminaires and a computerized device comprising a plurality of lights and a controller configured to communicate with the computerized device, and coupled to the plurality of lights, and configured to operate the luminaire to emit source light, the source light being characterized by a dominant source light wavelength that varies with time within a range from 390 nanometers to 750 nanometers. The controller is configured to operate the plurality of lights to emit a source light with a different dominant source light wavelength than the source light of another luminaire in the lighting apparatus and combine with the source light emitted by the at least one other luminaire to form a combined light at a distance from the luminaire, receive a lighting scenario from the computerized device, and operate the luminaire responsive to the lighting scenario.1. A luminaire for use in a lighting apparatus comprising a plurality of luminaires and a computerized device, the luminaire comprising:
a plurality of lights; and a controller, configured to communicate with the computerized device, and coupled to the plurality of lights, and configured to operate the luminaire to emit source light, the source light being characterized by a dominant source light wavelength within a range from 390 nanometers to 750 nanometers; wherein the controller is configured to operate the plurality of lights to emit a source light with a different dominant source light wavelength than the source light of at least one other luminaire in the lighting apparatus, and such that the source light emitted by the luminaire is combined with the source light emitted by the at least one other luminaire to form a combined light at a distance from the luminaire defined as a combining distance; wherein the dominant source light wavelength of the luminaire is variable with time; and wherein the controller is configured to receive a lighting scenario from the computerized device placed in electronic communication with the controller; and wherein the controller is programmable to operate the luminaire responsive to the lighting scenario received from the remote computerized device. 2. The luminaire according to claim 1 wherein each of the plurality of lights comprises an LED. 3. The luminaire according to claim 1 wherein the combined light is a white light. 4. The luminaire according to claim 1 wherein the combined light comprises a plurality of wavelengths that are variable with time. 5. The luminaire according to claim 1 wherein the controller is operable to operate the luminaire such that a selected wavelength is persistently included in the source light. 6. The luminaire according to claim 1 wherein the controller is configured to operate the plurality of lights to emit a source light comprising two wavelengths; and wherein the source light has a non-white color associated therewith. 7. The luminaire according to claim 1 further comprising a locating device operable to determine a location of the luminaire, defining a determined location; wherein the luminaire is operable to transmit the determined location to the computerized device. 8. The luminaire according to claim 7 wherein the controller is configured to receive a lighting scenario from the computerized device responsive to the determined locations transmitted to the computerized device. 9. The luminaire according to claim 7 wherein the locating device is operable to determine the determined location with respect to at least one of an adjacent luminaire, the plurality of luminaires, and a volume into which the source light is emitted. 10. The luminaire according to claim 7 wherein the locating device is operable to detect an interfering object within a volume into which the source light is emitted. | 2,800 |
11,649 | 11,649 | 15,217,226 | 2,851 | A system may include an input engine and a void avoidance engine. The input engine may access an electronic circuit design of an electronic design automation (EDA) tool as well as identify a first net and a second net in the electronic circuit design. The void avoidance engine may perform a void avoidance verification scan to determine whether the first net, the second net, or both, are within a threshold distance from any voids in the electronic circuit design. The void avoidance engine may also generate a double violation alert responsive to a determination that the first net and the second net are both within the threshold distance from a particular void in the electronic circuit design and that the first net and the second net are located on different sides of the same plane of the electronic circuit design. | 1. A system comprising:
an input engine to:
access an electronic circuit design of an electronic design automation (EDA) tool; and
identify a first net and a second net in the electronic circuit design; and
a void avoidance engine to:
perform a void avoidance verification scan to determine whether the first net, the second net, or both, are within a threshold distance from any voids in the electronic circuit design; and
generate a double violation alert responsive to a determination that the first net and the second net are both within the threshold distance from a particular void in the electronic circuit design and that the first net and the second net are located on different sides of the same particular plane of the electronic circuit design. 2. The system of claim 1, wherein the void avoidance engine is further to, prior to generation of the double violation alert:
determine, from the void avoidance verification scan, that the first net and the second net are both within the threshold distance from the particular void; and determine that the first net and the second net are on different sides of the same particular plane. 3. The system of claim 1, wherein the input engine is identify the first net and the second net based on net names, net keywords, or both, specified in a user-provided input file. 4. The system of claim 1, wherein the input engine is further to identify the threshold distance applicable to the first net and the second net from a user-provided input file. 5. The system of claim 1, wherein the void avoidance engine is further to present the double violation alert through a user interface, the double violation alert indicating that both the first net and the second net are within the threshold distance from the same particular void. 6. The system of claim 5, wherein the void avoidance engine is further to present the double violation alert by presenting an indication that the first net and the second net are located on different sides of the same particular plane. 7. The system of claim 5, wherein the void avoidance engine is further to present the double violation alert by:
presenting a visual indication specifying a segment of the first net within the threshold distance from the particular void; and presenting a visual indication specifying a segment of the second net within the threshold distance from the particular void. 8. A method comprising:
accessing an electronic circuit design of an electronic design automation (EDA) tool; accessing an input file specifying net names, net keywords, or both, to perform a void avoidance verification; identifying nets in the electronic circuit design corresponding to each of the net names or net keywords specified in the input file; performing the void avoidance verification for the identified nets in the electronic circuit design by, for each particular net:
determining whether the particular net violates threshold void distance criteria applicable to the particular net, wherein the threshold void distance criteria specifies a threshold distance between the particular net and voids in the electronic circuit design; and
responsive to a determination that the particular net violates the threshold void distance criteria with respect to a particular void in the electronic circuit design:
determining whether the electronic circuit design includes a different net that is:
located on a different side of a particular plane that the particular net is located on; and
violates, with respect to the particular void, threshold void distance criteria applicable to the different net. 9. The method of claim 8, further comprising accessing, from the input file or a user interface:
the threshold void distance criteria applicable to the particular net; and the threshold void distance criteria applicable to the different net. 10. The method of claim 8, wherein the threshold void distance criteria applicable to the particular net specifies a threshold distance that is different from a threshold distance specified in the threshold void distance criteria applicable to the different net. 11. The method of claim 8, further comprising generating a double violation alert responsive to a determination that the electronic circuit design includes the different net that is located on a different side of the particular plane that the particular net is located on and violates the threshold void distance criteria applicable to the different net with respect to the same particular void. 12. The method of claim 11, further comprising presenting the double violation alert to indicate violations to the threshold void distance criteria by the particular net and the different net with respect to the particular void. 13. The method of claim 12, wherein presenting the double violation alert comprises presenting an indication that the particular net and the different net are located on different sides of the same particular plane. 14. The method of claim 8, further comprising, responsive to a determination that the particular net violates the threshold void distance criteria:
presenting a visual indication specifying a segment of the particular net that is within the threshold distance to the particular void. 15. A non-transitory machine-readable medium comprising instructions executable by a processing resource to:
access an electronic circuit design of an electronic design automation (EDA) tool to perform a void avoidance verification; identify a first net in the electronic circuit design and a first threshold distance from voids in electronic circuit design applicable to the first net; identify a second net in the electronic circuit design and a second threshold distance from voids in the electronic circuit design applicable to the second net; and generate a double violation alert responsive to a determination that:
the first net is within the first threshold distance from a particular void in the electronic circuit design;
the second net is within the second threshold distance from the particular void; and
the first net and second net are located on different sides of the same plane in the electronic circuit design. 16. The non-transitory machine-readable medium of claim 15, wherein the instructions are executable by the processing resource to identify the first net, the first threshold distance, the second net, and the second threshold distance according to user input. 17. The non-transitory machine-readable medium of claim 15, wherein the first threshold distance is different from the second threshold distance. 18. The non-transitory machine-readable medium of claim 15, wherein the instructions are executable by the processing resource to determine that the first net is within the first threshold distance from the particular void or that the second net is within the second threshold distance from the particular void through execution of a void avoidance verification scan. 19. The non-transitory machine-readable medium of claim 15, wherein the instructions are further executable by the processing resource to present the double violation alert through a user interface, including presenting an indication that the first net and the second net are located on different sides of the same plane of the electronic circuit design. 20. The non-transitory machine-readable medium of claim 19, wherein the double violation alert visually identifies the first net, the second net, the particular void, or any combination thereof. | A system may include an input engine and a void avoidance engine. The input engine may access an electronic circuit design of an electronic design automation (EDA) tool as well as identify a first net and a second net in the electronic circuit design. The void avoidance engine may perform a void avoidance verification scan to determine whether the first net, the second net, or both, are within a threshold distance from any voids in the electronic circuit design. The void avoidance engine may also generate a double violation alert responsive to a determination that the first net and the second net are both within the threshold distance from a particular void in the electronic circuit design and that the first net and the second net are located on different sides of the same plane of the electronic circuit design.1. A system comprising:
an input engine to:
access an electronic circuit design of an electronic design automation (EDA) tool; and
identify a first net and a second net in the electronic circuit design; and
a void avoidance engine to:
perform a void avoidance verification scan to determine whether the first net, the second net, or both, are within a threshold distance from any voids in the electronic circuit design; and
generate a double violation alert responsive to a determination that the first net and the second net are both within the threshold distance from a particular void in the electronic circuit design and that the first net and the second net are located on different sides of the same particular plane of the electronic circuit design. 2. The system of claim 1, wherein the void avoidance engine is further to, prior to generation of the double violation alert:
determine, from the void avoidance verification scan, that the first net and the second net are both within the threshold distance from the particular void; and determine that the first net and the second net are on different sides of the same particular plane. 3. The system of claim 1, wherein the input engine is identify the first net and the second net based on net names, net keywords, or both, specified in a user-provided input file. 4. The system of claim 1, wherein the input engine is further to identify the threshold distance applicable to the first net and the second net from a user-provided input file. 5. The system of claim 1, wherein the void avoidance engine is further to present the double violation alert through a user interface, the double violation alert indicating that both the first net and the second net are within the threshold distance from the same particular void. 6. The system of claim 5, wherein the void avoidance engine is further to present the double violation alert by presenting an indication that the first net and the second net are located on different sides of the same particular plane. 7. The system of claim 5, wherein the void avoidance engine is further to present the double violation alert by:
presenting a visual indication specifying a segment of the first net within the threshold distance from the particular void; and presenting a visual indication specifying a segment of the second net within the threshold distance from the particular void. 8. A method comprising:
accessing an electronic circuit design of an electronic design automation (EDA) tool; accessing an input file specifying net names, net keywords, or both, to perform a void avoidance verification; identifying nets in the electronic circuit design corresponding to each of the net names or net keywords specified in the input file; performing the void avoidance verification for the identified nets in the electronic circuit design by, for each particular net:
determining whether the particular net violates threshold void distance criteria applicable to the particular net, wherein the threshold void distance criteria specifies a threshold distance between the particular net and voids in the electronic circuit design; and
responsive to a determination that the particular net violates the threshold void distance criteria with respect to a particular void in the electronic circuit design:
determining whether the electronic circuit design includes a different net that is:
located on a different side of a particular plane that the particular net is located on; and
violates, with respect to the particular void, threshold void distance criteria applicable to the different net. 9. The method of claim 8, further comprising accessing, from the input file or a user interface:
the threshold void distance criteria applicable to the particular net; and the threshold void distance criteria applicable to the different net. 10. The method of claim 8, wherein the threshold void distance criteria applicable to the particular net specifies a threshold distance that is different from a threshold distance specified in the threshold void distance criteria applicable to the different net. 11. The method of claim 8, further comprising generating a double violation alert responsive to a determination that the electronic circuit design includes the different net that is located on a different side of the particular plane that the particular net is located on and violates the threshold void distance criteria applicable to the different net with respect to the same particular void. 12. The method of claim 11, further comprising presenting the double violation alert to indicate violations to the threshold void distance criteria by the particular net and the different net with respect to the particular void. 13. The method of claim 12, wherein presenting the double violation alert comprises presenting an indication that the particular net and the different net are located on different sides of the same particular plane. 14. The method of claim 8, further comprising, responsive to a determination that the particular net violates the threshold void distance criteria:
presenting a visual indication specifying a segment of the particular net that is within the threshold distance to the particular void. 15. A non-transitory machine-readable medium comprising instructions executable by a processing resource to:
access an electronic circuit design of an electronic design automation (EDA) tool to perform a void avoidance verification; identify a first net in the electronic circuit design and a first threshold distance from voids in electronic circuit design applicable to the first net; identify a second net in the electronic circuit design and a second threshold distance from voids in the electronic circuit design applicable to the second net; and generate a double violation alert responsive to a determination that:
the first net is within the first threshold distance from a particular void in the electronic circuit design;
the second net is within the second threshold distance from the particular void; and
the first net and second net are located on different sides of the same plane in the electronic circuit design. 16. The non-transitory machine-readable medium of claim 15, wherein the instructions are executable by the processing resource to identify the first net, the first threshold distance, the second net, and the second threshold distance according to user input. 17. The non-transitory machine-readable medium of claim 15, wherein the first threshold distance is different from the second threshold distance. 18. The non-transitory machine-readable medium of claim 15, wherein the instructions are executable by the processing resource to determine that the first net is within the first threshold distance from the particular void or that the second net is within the second threshold distance from the particular void through execution of a void avoidance verification scan. 19. The non-transitory machine-readable medium of claim 15, wherein the instructions are further executable by the processing resource to present the double violation alert through a user interface, including presenting an indication that the first net and the second net are located on different sides of the same plane of the electronic circuit design. 20. The non-transitory machine-readable medium of claim 19, wherein the double violation alert visually identifies the first net, the second net, the particular void, or any combination thereof. | 2,800 |
11,650 | 11,650 | 14,378,455 | 2,859 | A battery charger includes a housing and a plurality of charging ports coupled to the housing. Each charging port is configured to connect a battery pack to the battery charger. The battery charger also includes a charging circuit positioned within the housing and electrically coupled to the plurality of charging ports. The charging circuit is operable to charge the battery packs connected to the plurality of charging ports in series. The battery charger further includes a skip switch coupled to the charging circuit. The skip switch is operable to skip a battery pack currently being charged and advance to another battery pack connected to the battery charger. | 1. A battery charger comprising:
a housing; a plurality of charging ports coupled to the housing, each charging port configured to connect a battery pack to the battery charger; a charging circuit positioned within the housing and electrically coupled to the plurality of charging ports, the charging circuit operable to charge the battery packs connected to the plurality of charging ports in series; and a skip switch coupled to the charging circuit, the skip switch operable to skip a battery pack currently being charged and advance to another battery pack connected to the battery charger. 2. The battery charger of claim 1, wherein, the skip switch is operable to stop charging of the battery pack currently being charged before charging is complete. 3. The battery charger of claim 2, wherein, the skip switch is operable to initiate charging of the next battery pack in series after the charging of the battery pack currently being charged is stopped. 4. The battery charger of claim 1, wherein the skip switch includes a manual actuator. 5. The battery charger of claim 1, wherein the skip switch is supported on the housing. 6. The battery charger of claim 5, further comprising a base coupled to a bottom portion of the housing, wherein the housing includes an upper surface spaced apart from the base, and wherein the skip switch is supported on the upper surface. 7. The battery charger of claim 5, wherein the skip switch extends outwardly from the housing. 8. A method of charging battery packs in series, the method comprising:
connecting a first battery pack and a second battery pack to a battery charger; charging the first battery pack; actuating a skip switch on the battery charger while the first battery pack is charging; and stopping charging of the first battery pack and initiating charging of the second battery pack in response to actuating the skip switch. 9. The method of claim 8, wherein the second battery pack is not being charged while the first battery pack is charging. 10. The method of claim 8, wherein actuating the skip switch stops charging of the first battery pack before charging is complete. 11. The method of claim 8, wherein actuating the skip switch includes manually actuating the skip switch. 12. The method of claim 11, wherein the battery pack includes a housing and the skip switch extends from the housing, and wherein manually actuating the skip switch includes moving the skip switch relative to the housing. 13. A battery charger comprising:
a housing including a handle to facilitate lifting and carrying the battery charger; a plurality of charging ports coupled to the housing, each charging port configured to connect a battery pack to the battery charger; and a charging circuit positioned within the housing and electrically coupled to the plurality of charging ports, the charging circuit operable to charge the battery packs connected to the plurality of charging ports; wherein the plurality of charging ports is spaced apart on the housing such that, when a battery pack is connected to each charging port, the battery charger is balanced around the handle. 14. The battery charger of claim 13, wherein the housing defines a central axis that extends through the handle. 15. The battery charger of claim 14, wherein every charging port coupled to the housing is diametrically opposed from another charging port around a circle whose origin is the central axis. 16. The battery charger of claim 14, wherein each charging port includes guide rails, and wherein the guide rails extend generally parallel to the central axis to receive slide-on style battery packs. 17. The battery charger of claim 13, wherein the housing includes four side surfaces arranged in a generally rectangular pattern, and wherein at least one charging port is positioned on each side surface. 18. The battery charger of claim 17, further comprising an upper surface extending between and arranged generally perpendicular to the four side surfaces, wherein the handle extends from the upper surface. 19. The battery charger of claim 18, wherein the handle defines a longitudinal axis that is generally parallel to two of the four side surfaces and is generally perpendicular to two of the four side surfaces. 20. The battery charger of claim 18, further comprising an indicator light coupled to the charging circuit and associated with one of the plurality of charging ports, wherein the handle is spaced apart from the upper surface of the housing, and wherein the indicator light is supported on the upper surface beneath the handle. 21. The battery charger of claim 17, wherein the plurality of charging ports includes six charging ports, wherein two of the four side surfaces each support two charging ports, and wherein two of the four side surfaces each support one charging port. 22. A battery charger comprising:
a housing; a plurality of charging ports coupled to the housing, each charging port configured to connect a battery pack to the battery charger; and a charging circuit including a first circuit board and a second circuit board, the first and second circuit boards being mounted in parallel within the housing, the charging circuit being electrically coupled to the plurality of charging ports to charge the battery packs connected to the plurality of charging ports. 23. The battery charger of claim 22, wherein the housing includes four side surfaces arranged in a generally rectangular pattern, and wherein the first and second circuit boards extend between two opposing sides surfaces of the four side surfaces and face the other two opposing side surfaces of the four side surfaces. 24. The battery charger of claim 22, further comprising a base coupled to a bottom portion of the housing, wherein the housing includes an upper surface spaced apart from the base, and wherein the first and second circuit boards are oriented generally perpendicular to the upper surface. 25. The battery charger of claim 22, wherein the first and second circuit boards are generally the same shape and size. 26. The battery charger of claim 22, wherein a footprint area of the battery charger is less than 85 square inches. 27. A battery charger comprising:
a housing including four side surfaces arranged in a generally rectangular pattern, an upper surface extending between and arranged generally perpendicular to the four side surfaces, and a handle extending from the upper surface to facilitate lifting and carrying the battery charger; a plurality of charging ports coupled to the housing, each charging port configured to connect a battery pack to the battery charger, the plurality of charging ports being spaced apart on the housing such that, when a battery pack is connected to each charging port, the battery charger is balanced around the handle; a charging circuit including a first circuit board and a second circuit board, the first and second circuit boards being mounted in parallel within the housing, the charging circuit being electrically coupled to the plurality of charging ports to charge the battery packs connected to the plurality of charging ports in series; and a skip switch coupled to the charging circuit, the skip switch operable to skip a battery pack currently being charged and advance to another battery pack connected to the battery charger. | A battery charger includes a housing and a plurality of charging ports coupled to the housing. Each charging port is configured to connect a battery pack to the battery charger. The battery charger also includes a charging circuit positioned within the housing and electrically coupled to the plurality of charging ports. The charging circuit is operable to charge the battery packs connected to the plurality of charging ports in series. The battery charger further includes a skip switch coupled to the charging circuit. The skip switch is operable to skip a battery pack currently being charged and advance to another battery pack connected to the battery charger.1. A battery charger comprising:
a housing; a plurality of charging ports coupled to the housing, each charging port configured to connect a battery pack to the battery charger; a charging circuit positioned within the housing and electrically coupled to the plurality of charging ports, the charging circuit operable to charge the battery packs connected to the plurality of charging ports in series; and a skip switch coupled to the charging circuit, the skip switch operable to skip a battery pack currently being charged and advance to another battery pack connected to the battery charger. 2. The battery charger of claim 1, wherein, the skip switch is operable to stop charging of the battery pack currently being charged before charging is complete. 3. The battery charger of claim 2, wherein, the skip switch is operable to initiate charging of the next battery pack in series after the charging of the battery pack currently being charged is stopped. 4. The battery charger of claim 1, wherein the skip switch includes a manual actuator. 5. The battery charger of claim 1, wherein the skip switch is supported on the housing. 6. The battery charger of claim 5, further comprising a base coupled to a bottom portion of the housing, wherein the housing includes an upper surface spaced apart from the base, and wherein the skip switch is supported on the upper surface. 7. The battery charger of claim 5, wherein the skip switch extends outwardly from the housing. 8. A method of charging battery packs in series, the method comprising:
connecting a first battery pack and a second battery pack to a battery charger; charging the first battery pack; actuating a skip switch on the battery charger while the first battery pack is charging; and stopping charging of the first battery pack and initiating charging of the second battery pack in response to actuating the skip switch. 9. The method of claim 8, wherein the second battery pack is not being charged while the first battery pack is charging. 10. The method of claim 8, wherein actuating the skip switch stops charging of the first battery pack before charging is complete. 11. The method of claim 8, wherein actuating the skip switch includes manually actuating the skip switch. 12. The method of claim 11, wherein the battery pack includes a housing and the skip switch extends from the housing, and wherein manually actuating the skip switch includes moving the skip switch relative to the housing. 13. A battery charger comprising:
a housing including a handle to facilitate lifting and carrying the battery charger; a plurality of charging ports coupled to the housing, each charging port configured to connect a battery pack to the battery charger; and a charging circuit positioned within the housing and electrically coupled to the plurality of charging ports, the charging circuit operable to charge the battery packs connected to the plurality of charging ports; wherein the plurality of charging ports is spaced apart on the housing such that, when a battery pack is connected to each charging port, the battery charger is balanced around the handle. 14. The battery charger of claim 13, wherein the housing defines a central axis that extends through the handle. 15. The battery charger of claim 14, wherein every charging port coupled to the housing is diametrically opposed from another charging port around a circle whose origin is the central axis. 16. The battery charger of claim 14, wherein each charging port includes guide rails, and wherein the guide rails extend generally parallel to the central axis to receive slide-on style battery packs. 17. The battery charger of claim 13, wherein the housing includes four side surfaces arranged in a generally rectangular pattern, and wherein at least one charging port is positioned on each side surface. 18. The battery charger of claim 17, further comprising an upper surface extending between and arranged generally perpendicular to the four side surfaces, wherein the handle extends from the upper surface. 19. The battery charger of claim 18, wherein the handle defines a longitudinal axis that is generally parallel to two of the four side surfaces and is generally perpendicular to two of the four side surfaces. 20. The battery charger of claim 18, further comprising an indicator light coupled to the charging circuit and associated with one of the plurality of charging ports, wherein the handle is spaced apart from the upper surface of the housing, and wherein the indicator light is supported on the upper surface beneath the handle. 21. The battery charger of claim 17, wherein the plurality of charging ports includes six charging ports, wherein two of the four side surfaces each support two charging ports, and wherein two of the four side surfaces each support one charging port. 22. A battery charger comprising:
a housing; a plurality of charging ports coupled to the housing, each charging port configured to connect a battery pack to the battery charger; and a charging circuit including a first circuit board and a second circuit board, the first and second circuit boards being mounted in parallel within the housing, the charging circuit being electrically coupled to the plurality of charging ports to charge the battery packs connected to the plurality of charging ports. 23. The battery charger of claim 22, wherein the housing includes four side surfaces arranged in a generally rectangular pattern, and wherein the first and second circuit boards extend between two opposing sides surfaces of the four side surfaces and face the other two opposing side surfaces of the four side surfaces. 24. The battery charger of claim 22, further comprising a base coupled to a bottom portion of the housing, wherein the housing includes an upper surface spaced apart from the base, and wherein the first and second circuit boards are oriented generally perpendicular to the upper surface. 25. The battery charger of claim 22, wherein the first and second circuit boards are generally the same shape and size. 26. The battery charger of claim 22, wherein a footprint area of the battery charger is less than 85 square inches. 27. A battery charger comprising:
a housing including four side surfaces arranged in a generally rectangular pattern, an upper surface extending between and arranged generally perpendicular to the four side surfaces, and a handle extending from the upper surface to facilitate lifting and carrying the battery charger; a plurality of charging ports coupled to the housing, each charging port configured to connect a battery pack to the battery charger, the plurality of charging ports being spaced apart on the housing such that, when a battery pack is connected to each charging port, the battery charger is balanced around the handle; a charging circuit including a first circuit board and a second circuit board, the first and second circuit boards being mounted in parallel within the housing, the charging circuit being electrically coupled to the plurality of charging ports to charge the battery packs connected to the plurality of charging ports in series; and a skip switch coupled to the charging circuit, the skip switch operable to skip a battery pack currently being charged and advance to another battery pack connected to the battery charger. | 2,800 |
11,651 | 11,651 | 15,270,105 | 2,837 | Disclosed is an improved sound insulating multiple layer panel. The improved panel comprises: a first panel having a first thickness; a first interlayer having a first interlayer thickness and a first glass transition temperature of less than 25° C. adjacent the first panel; a second panel having a second thickness adjacent the first interlayer; a second interlayer having a second interlayer thickness and a second glass transition temperature of less than 25° C. adjacent the second panel; a third panel having a third thickness adjacent the second interlayer; wherein the multiple layer panel has a combined panel thickness, a combined interlayer thickness and a total thickness; wherein the second panel is disposed between the first interlayer and the second interlayer. | 1. A sound insulating multiple layer panel comprising:
a first panel having a first thickness; a first interlayer having a first interlayer thickness, a damping loss factor of at least 0.10 at 20° C., and a first glass transition temperature of less than 25° C. adjacent the first panel; a second panel having a second thickness adjacent the first interlayer; a second interlayer having a second interlayer thickness, a damping loss factor of at least 0.10 at 20° C., and a second glass transition temperature of less than 25° C. adjacent the second panel; a third panel having a third thickness adjacent the second interlayer; wherein the multiple layer panel has a combined panel thickness, a combined interlayer thickness and a total thickness; wherein the second panel is disposed between the first interlayer and the second interlayer. 2. The multiple layer panel of claim 1, wherein at least one of the first, second and third panels is glass. 3. The multiple layer panel of claim 1, wherein at least one interlayer is a monolithic interlayer. 4. The multiple layer panel of claim 1, wherein at least one interlayer is a multilayer interlayer having at least three layers. 5. The multiple layer panel of claim 1, wherein at least one interlayer comprises poly(vinyl acetal) resin. 6. The multiple layer panel of claim 1, wherein at least one interlayer has a damping loss factor of at least 0.20 at 20° C. 7. The multiple layer panel of claim 1, wherein the multiple layer panel has a sound transmission loss (STL) of at least 34 decibels (dB) at 20° C. 8. A sound insulating multiple layer glass panel comprising:
a first glass panel having a first glass thickness; a first interlayer having a first interlayer thickness, a damping loss factor of at least 0.10 at 20° C., and a first glass transition temperature of less than 25° C. adjacent the first panel; a second panel having a second thickness adjacent the first interlayer; a second interlayer having a second interlayer thickness, a damping loss factor of at least 0.10 at 20° C., and a second glass transition temperature of less than 25° C. adjacent the second panel; a third glass panel having a third glass thickness adjacent the second interlayer; wherein the multiple layer glass panel has a combined glass thickness, a combined interlayer thickness and a total thickness; wherein the second glass panel is disposed between the first interlayer and the second interlayer. 9. The multiple layer panel of claim 8, wherein at least one interlayer is a monolithic interlayer. 10. The multiple layer panel of claim 8, wherein the first and second interlayers are monolithic interlayers. 11. The multiple layer panel of claim 8, wherein at least one interlayer is a multilayer interlayer having at least three layers. 12. The multiple layer panel of claim 8, wherein the first and second interlayers are multilayer interlayers having at least three layers. 13. The multiple layer panel of claim 8, wherein at least one interlayer comprises poly(vinyl acetal) resin. 14. The multiple layer panel of claim 8, wherein at least one interlayer has a damping loss factor of at least 0.20 at 20° C. 15. The multiple layer panel of claim 8, wherein the multiple layer glass panel has a sound transmission loss (STL) of at least 34 decibels (dB) at 20° C. 16. (canceled) 17. The multiple layer panel of claim 8, wherein at least two of the first, second and third panels have the same panel thickness. 18. The multiple layer panel of claim 8, wherein the first, second and third panels each have a different panel thickness. 19. The multiple layer panel of claim 12, wherein each of the multilayer interlayers comprise two stiff outer layers and a softer inner layer between the two stiff outer layers. 20. The multiple layer panel of claim 8, wherein at least two interlayers comprise poly(vinyl acetal) resin. 21. A sound insulating multiple layer glass panel comprising:
a first glass panel having a first glass thickness; a first multilayer interlayer having a first interlayer thickness and a first glass transition temperature of less than 25° C. adjacent the first glass panel; a second glass panel having a second glass thickness adjacent the first interlayer; a second multilayer interlayer having a second interlayer thickness and a second glass transition temperature of less than 25° C. adjacent the second glass panel; a third glass panel having a third glass thickness adjacent the second interlayer; wherein the multiple layer glass panel has a combined glass thickness, a combined interlayer thickness and a total thickness; wherein the second glass panel is disposed between the first multilayer interlayer and the second multilayer interlayer. | Disclosed is an improved sound insulating multiple layer panel. The improved panel comprises: a first panel having a first thickness; a first interlayer having a first interlayer thickness and a first glass transition temperature of less than 25° C. adjacent the first panel; a second panel having a second thickness adjacent the first interlayer; a second interlayer having a second interlayer thickness and a second glass transition temperature of less than 25° C. adjacent the second panel; a third panel having a third thickness adjacent the second interlayer; wherein the multiple layer panel has a combined panel thickness, a combined interlayer thickness and a total thickness; wherein the second panel is disposed between the first interlayer and the second interlayer.1. A sound insulating multiple layer panel comprising:
a first panel having a first thickness; a first interlayer having a first interlayer thickness, a damping loss factor of at least 0.10 at 20° C., and a first glass transition temperature of less than 25° C. adjacent the first panel; a second panel having a second thickness adjacent the first interlayer; a second interlayer having a second interlayer thickness, a damping loss factor of at least 0.10 at 20° C., and a second glass transition temperature of less than 25° C. adjacent the second panel; a third panel having a third thickness adjacent the second interlayer; wherein the multiple layer panel has a combined panel thickness, a combined interlayer thickness and a total thickness; wherein the second panel is disposed between the first interlayer and the second interlayer. 2. The multiple layer panel of claim 1, wherein at least one of the first, second and third panels is glass. 3. The multiple layer panel of claim 1, wherein at least one interlayer is a monolithic interlayer. 4. The multiple layer panel of claim 1, wherein at least one interlayer is a multilayer interlayer having at least three layers. 5. The multiple layer panel of claim 1, wherein at least one interlayer comprises poly(vinyl acetal) resin. 6. The multiple layer panel of claim 1, wherein at least one interlayer has a damping loss factor of at least 0.20 at 20° C. 7. The multiple layer panel of claim 1, wherein the multiple layer panel has a sound transmission loss (STL) of at least 34 decibels (dB) at 20° C. 8. A sound insulating multiple layer glass panel comprising:
a first glass panel having a first glass thickness; a first interlayer having a first interlayer thickness, a damping loss factor of at least 0.10 at 20° C., and a first glass transition temperature of less than 25° C. adjacent the first panel; a second panel having a second thickness adjacent the first interlayer; a second interlayer having a second interlayer thickness, a damping loss factor of at least 0.10 at 20° C., and a second glass transition temperature of less than 25° C. adjacent the second panel; a third glass panel having a third glass thickness adjacent the second interlayer; wherein the multiple layer glass panel has a combined glass thickness, a combined interlayer thickness and a total thickness; wherein the second glass panel is disposed between the first interlayer and the second interlayer. 9. The multiple layer panel of claim 8, wherein at least one interlayer is a monolithic interlayer. 10. The multiple layer panel of claim 8, wherein the first and second interlayers are monolithic interlayers. 11. The multiple layer panel of claim 8, wherein at least one interlayer is a multilayer interlayer having at least three layers. 12. The multiple layer panel of claim 8, wherein the first and second interlayers are multilayer interlayers having at least three layers. 13. The multiple layer panel of claim 8, wherein at least one interlayer comprises poly(vinyl acetal) resin. 14. The multiple layer panel of claim 8, wherein at least one interlayer has a damping loss factor of at least 0.20 at 20° C. 15. The multiple layer panel of claim 8, wherein the multiple layer glass panel has a sound transmission loss (STL) of at least 34 decibels (dB) at 20° C. 16. (canceled) 17. The multiple layer panel of claim 8, wherein at least two of the first, second and third panels have the same panel thickness. 18. The multiple layer panel of claim 8, wherein the first, second and third panels each have a different panel thickness. 19. The multiple layer panel of claim 12, wherein each of the multilayer interlayers comprise two stiff outer layers and a softer inner layer between the two stiff outer layers. 20. The multiple layer panel of claim 8, wherein at least two interlayers comprise poly(vinyl acetal) resin. 21. A sound insulating multiple layer glass panel comprising:
a first glass panel having a first glass thickness; a first multilayer interlayer having a first interlayer thickness and a first glass transition temperature of less than 25° C. adjacent the first glass panel; a second glass panel having a second glass thickness adjacent the first interlayer; a second multilayer interlayer having a second interlayer thickness and a second glass transition temperature of less than 25° C. adjacent the second glass panel; a third glass panel having a third glass thickness adjacent the second interlayer; wherein the multiple layer glass panel has a combined glass thickness, a combined interlayer thickness and a total thickness; wherein the second glass panel is disposed between the first multilayer interlayer and the second multilayer interlayer. | 2,800 |
11,652 | 11,652 | 15,552,584 | 2,812 | A light source assembly comprising: a solid state lighting device; a wavelength converting element arranged to receive light emitted by the solid state lighting device and adapted to convert some of the received light to a different wavelength; and a scattering layer applied to a light emitting surface of the wavelength converting element. The scattering layer is adapted to scatter light back to the wavelength converting element, and a backscattering strength of the scattering layer varies over said light emitting surface so as to reduce variations in the color of the light emitted from the light emitting surface. | 1. A light source assembly comprising:
a solid state lighting device; a wavelength converting element arranged to receive light emitted by the solid state lighting device and adapted to convert some of the received light to a different wavelength; and a scattering layer applied to a light emitting surface of the wavelength converting element, the scattering layer being adapted to scatter light back to the wavelength converting element, and a backscattering strength of the scattering layer varying over said light emitting surface so as to reduce variations in the color of the light emitted from the light emitting surface. 2. The light source assembly according to claim 1, wherein the scattering layer has a varying density, the backscattering strength being determined by said density. 3. The light source assembly according to claim 1, wherein the scattering layer has a varying thickness perpendicular to the light emitting surface, the backscattering strength being determined by said thickness. 4. The light source assembly according to claim 1, wherein the scattering layer comprises scattering elements chosen from the group consisting of gas bubbles, titanium oxide particles and phosphor particles. 5. The light source assembly according to claim 1, wherein the scattering layer comprises wavelength converting particles (10). 6. The light source assembly according to claim 5, wherein the wavelength converting element and the scattering layer comprise the same type of wavelength converting particles. 7. The light source assembly according to claim 5, wherein the wavelength converting particles are phosphor particles. 8. The light source assembly according to claim 1, wherein the color of the light leaving the light emitting surface depends on the position from which the light leaves the light emitting surface. 9. The light source assembly according to claim 1, wherein the light emitting surface is flat. 10. A method for manufacturing a light source assembly comprising:
providing a solid state lighting device and a wavelength converting element, wherein the wavelength converting element is arranged to receive light emitted by the solid state lighting device and adapted to convert some of the received light to a different wavelength; measuring variations in the color of the light emitted from a light emitting surface of the wavelength converting element; and applying a scattering layer to the light emitting surface; the scattering layer being adapted to scatter light back to the wavelength converting element, and a backscattering strength of the scattering layer being selected to vary over said light emitting surface so as to reduce the measured variations in the color of the light emitted from the light emitting surface. 11. The method according to claim 10, wherein the scattering layer is applied by additive manufacturing techniques. 12. The method according to claim 10, wherein the scattering layer is applied to the light emitting surface in the form of a droplet. | A light source assembly comprising: a solid state lighting device; a wavelength converting element arranged to receive light emitted by the solid state lighting device and adapted to convert some of the received light to a different wavelength; and a scattering layer applied to a light emitting surface of the wavelength converting element. The scattering layer is adapted to scatter light back to the wavelength converting element, and a backscattering strength of the scattering layer varies over said light emitting surface so as to reduce variations in the color of the light emitted from the light emitting surface.1. A light source assembly comprising:
a solid state lighting device; a wavelength converting element arranged to receive light emitted by the solid state lighting device and adapted to convert some of the received light to a different wavelength; and a scattering layer applied to a light emitting surface of the wavelength converting element, the scattering layer being adapted to scatter light back to the wavelength converting element, and a backscattering strength of the scattering layer varying over said light emitting surface so as to reduce variations in the color of the light emitted from the light emitting surface. 2. The light source assembly according to claim 1, wherein the scattering layer has a varying density, the backscattering strength being determined by said density. 3. The light source assembly according to claim 1, wherein the scattering layer has a varying thickness perpendicular to the light emitting surface, the backscattering strength being determined by said thickness. 4. The light source assembly according to claim 1, wherein the scattering layer comprises scattering elements chosen from the group consisting of gas bubbles, titanium oxide particles and phosphor particles. 5. The light source assembly according to claim 1, wherein the scattering layer comprises wavelength converting particles (10). 6. The light source assembly according to claim 5, wherein the wavelength converting element and the scattering layer comprise the same type of wavelength converting particles. 7. The light source assembly according to claim 5, wherein the wavelength converting particles are phosphor particles. 8. The light source assembly according to claim 1, wherein the color of the light leaving the light emitting surface depends on the position from which the light leaves the light emitting surface. 9. The light source assembly according to claim 1, wherein the light emitting surface is flat. 10. A method for manufacturing a light source assembly comprising:
providing a solid state lighting device and a wavelength converting element, wherein the wavelength converting element is arranged to receive light emitted by the solid state lighting device and adapted to convert some of the received light to a different wavelength; measuring variations in the color of the light emitted from a light emitting surface of the wavelength converting element; and applying a scattering layer to the light emitting surface; the scattering layer being adapted to scatter light back to the wavelength converting element, and a backscattering strength of the scattering layer being selected to vary over said light emitting surface so as to reduce the measured variations in the color of the light emitted from the light emitting surface. 11. The method according to claim 10, wherein the scattering layer is applied by additive manufacturing techniques. 12. The method according to claim 10, wherein the scattering layer is applied to the light emitting surface in the form of a droplet. | 2,800 |
11,653 | 11,653 | 15,395,859 | 2,816 | Various semiconductor chip solder bump and underbump metallization (UBM) structures and methods of making the same are disclosed. In one aspect, a method is provided that includes forming a first underbump metallization layer on a semiconductor chip is provided. The first underbump metallization layer has a hub, a first portion extending laterally from the hub, and a spoke connecting the hub to the first portion. A polymer layer is applied to the first underbump metallization layer. The polymer layer includes a first opening in alignment with the hub and a second opening in alignment with the spoke. A portion of the spoke is removed via the second opening to sever the connection between the hub and the first portion. | 1. An apparatus, comprising:
a semiconductor chip; a first underbump metallization layer on a semiconductor chip, the first underbump metallization layer having a hub, a first portion extending laterally from the hub, and a spoke connecting the hub to the first portion; and a polymer layer on the first underbump metallization layer, the polymer layer including a first opening in alignment with the hub and a second opening in alignment with the spoke. 2. The apparatus of claim 1, comprising a circuit board coupled to the semiconductor chip. 3. The apparatus of claim 2, wherein the circuit board comprises a semiconductor chip package substrate. 4. The apparatus of claim 1, comprising a second underbump metallization layer on the first underbump metallization layer and a solder structure on the second underbump metallization layer and in the first opening. 5. The apparatus of claim 1, wherein the first underbump metallization layer comprises plural openings and the polymer layer comprises plural portions positioned in respective of the plural openings. 6. The apparatus of claim 1, wherein the first underbump metallization layer comprises plural spokes connecting the hub to the first portion and the polymer layer comprises plural second openings each of which is in alignment with one of the spokes. 7. The apparatus of claim of claim 1, comprising an electronic device, the apparatus being mounted in the electronic device. 8. An apparatus, comprising:
a semiconductor chip; a first underbump metallization layer on a semiconductor chip, the first underbump metallization layer having a hub, a first portion extending laterally from the hub, and a spoke connecting the hub to the first portion; and a polymer layer on the first underbump metallization layer, the polymer layer including a first opening in alignment with the hub. 9. The apparatus of claim 8, wherein the first underbump metallization layer comprises plural openings and the polymer layer comprises plural portions positioned in respective of the plural openings. 10. The apparatus of claim 8, wherein the hub is round. 11. The apparatus of claim 8, comprising a circuit board coupled to the semiconductor chip. 12. The apparatus of claim 11, wherein the circuit board comprises a semiconductor chip package substrate. 13. The apparatus of claim of claim 11, comprising an electronic device, the apparatus being mounted in the electronic device. 14. The apparatus of claim 7, comprising a second underbump metallization layer on the first underbump metallization layer and a solder structure on the second underbump metallization layer and in the first opening. 15. An apparatus, comprising:
a semiconductor chip package substrate; a semiconductor chip mounted on the semiconductor chip package substrate, the semiconductor chip having a first underbump metallization layer, the first underbump metallization layer having a hub, a first portion extending laterally from the hub and a spoke connecting the hub to the first portion, and a polymer layer on the first underbump metallization layer, the polymer layer including a first opening in alignment with the hub. 16. The apparatus of claim 15, wherein the first underbump metallization layer comprises plural openings and the polymer layer comprises plural portions positioned in respective of the plural openings. 17. The apparatus of claim 15, wherein the hub is round. 18. The apparatus of claim of claim 11, comprising an electronic device, the apparatus being mounted in the electronic device. 19. The apparatus of claim 15, comprising a second underbump metallization layer on the first underbump metallization layer and a solder structure on the second underbump metallization layer and in the first opening. 20. The apparatus of claim 19, wherein the solder structure electrically couples the semiconductor chip to the package substrate. | Various semiconductor chip solder bump and underbump metallization (UBM) structures and methods of making the same are disclosed. In one aspect, a method is provided that includes forming a first underbump metallization layer on a semiconductor chip is provided. The first underbump metallization layer has a hub, a first portion extending laterally from the hub, and a spoke connecting the hub to the first portion. A polymer layer is applied to the first underbump metallization layer. The polymer layer includes a first opening in alignment with the hub and a second opening in alignment with the spoke. A portion of the spoke is removed via the second opening to sever the connection between the hub and the first portion.1. An apparatus, comprising:
a semiconductor chip; a first underbump metallization layer on a semiconductor chip, the first underbump metallization layer having a hub, a first portion extending laterally from the hub, and a spoke connecting the hub to the first portion; and a polymer layer on the first underbump metallization layer, the polymer layer including a first opening in alignment with the hub and a second opening in alignment with the spoke. 2. The apparatus of claim 1, comprising a circuit board coupled to the semiconductor chip. 3. The apparatus of claim 2, wherein the circuit board comprises a semiconductor chip package substrate. 4. The apparatus of claim 1, comprising a second underbump metallization layer on the first underbump metallization layer and a solder structure on the second underbump metallization layer and in the first opening. 5. The apparatus of claim 1, wherein the first underbump metallization layer comprises plural openings and the polymer layer comprises plural portions positioned in respective of the plural openings. 6. The apparatus of claim 1, wherein the first underbump metallization layer comprises plural spokes connecting the hub to the first portion and the polymer layer comprises plural second openings each of which is in alignment with one of the spokes. 7. The apparatus of claim of claim 1, comprising an electronic device, the apparatus being mounted in the electronic device. 8. An apparatus, comprising:
a semiconductor chip; a first underbump metallization layer on a semiconductor chip, the first underbump metallization layer having a hub, a first portion extending laterally from the hub, and a spoke connecting the hub to the first portion; and a polymer layer on the first underbump metallization layer, the polymer layer including a first opening in alignment with the hub. 9. The apparatus of claim 8, wherein the first underbump metallization layer comprises plural openings and the polymer layer comprises plural portions positioned in respective of the plural openings. 10. The apparatus of claim 8, wherein the hub is round. 11. The apparatus of claim 8, comprising a circuit board coupled to the semiconductor chip. 12. The apparatus of claim 11, wherein the circuit board comprises a semiconductor chip package substrate. 13. The apparatus of claim of claim 11, comprising an electronic device, the apparatus being mounted in the electronic device. 14. The apparatus of claim 7, comprising a second underbump metallization layer on the first underbump metallization layer and a solder structure on the second underbump metallization layer and in the first opening. 15. An apparatus, comprising:
a semiconductor chip package substrate; a semiconductor chip mounted on the semiconductor chip package substrate, the semiconductor chip having a first underbump metallization layer, the first underbump metallization layer having a hub, a first portion extending laterally from the hub and a spoke connecting the hub to the first portion, and a polymer layer on the first underbump metallization layer, the polymer layer including a first opening in alignment with the hub. 16. The apparatus of claim 15, wherein the first underbump metallization layer comprises plural openings and the polymer layer comprises plural portions positioned in respective of the plural openings. 17. The apparatus of claim 15, wherein the hub is round. 18. The apparatus of claim of claim 11, comprising an electronic device, the apparatus being mounted in the electronic device. 19. The apparatus of claim 15, comprising a second underbump metallization layer on the first underbump metallization layer and a solder structure on the second underbump metallization layer and in the first opening. 20. The apparatus of claim 19, wherein the solder structure electrically couples the semiconductor chip to the package substrate. | 2,800 |
11,654 | 11,654 | 15,895,664 | 2,822 | A gas is ionized into a plasma. A compound of a dopant is mixed into the plasma, forming a mixed plasma. Using a semiconductor device fabrication system, a layer of III-V material is exposed to the mixed plasma to dope the layer with the dopant up to a depth in the layer, forming a shallow doped portion of the layer. The depth of the dopant is controlled by a second layer of the dopant formed at the shallow doped portion of the layer. The second layer is exposed to a solution, where the solution is prepared to erode the dopant in the second layer at a first rate. After an elapsed period, the solution is removed from the second layer, wherein the elapsed period is insufficient to erode a total depth of the layer and the shallow doped portion by more than a tolerance erosion amount. | 1. An apparatus comprising:
a first component to ionize a gas into a plasma; a second component to mix a compound of a dopant into the plasma, forming a mixed plasma; a third component to expose, using a semiconductor device fabrication system, a layer of III-V material to the mixed plasma to dope the layer with the dopant up to a depth in the layer, forming a shallow doped portion of the layer; a fourth component to control the depth of the dopant by a second layer of the dopant formed at the shallow doped portion of the layer; a fifth component to expose the second layer to a solution, the solution prepared to erode the dopant in the second layer at a first rate; and a sixth component to remove, after an elapsed period, the solution from the second layer, wherein the elapsed period is insufficient to erode a total depth of the layer and the shallow doped portion by more than a tolerance erosion amount. 2. The computer usable program product of claim 1, further comprising:
program instructions to compute, using a processor and a memory, the elapsed period as a function of the temperature. 3. The computer usable program product of claim 2, wherein the function is an inverse relationship function. 4. The computer usable program product of claim 1, wherein the solution is heated to a temperature. 5. The computer usable program product of claim 4, wherein the temperature is in a range that includes sixty degrees Celsius. 6. The computer usable program product of claim 1, wherein the solution comprises Tetra Methyl Ammonium Hydroxide (TMAH) that has been diluted to a ratio. 7. The computer usable program product of claim 6, wherein the ratio is a percentage range that includes twenty-five percent. 8. The computer usable program product of claim 1, further comprising:
program instructions to adjust an amount of time the layer is exposed to the mixed plasma to adjust an amount of the dopant in the second layer. 9. The computer usable program product of claim 1, further comprising:
program instructions to deposit, using the mixed plasma, the second layer of the dopant over the doped portion of the layer. 10. The computer usable program product of claim 1, further comprising:
program instructions to adjust an amount of the compound mixed into the plasma to adjust a speed of depositing the second layer. 11. The computer usable program product of claim 1, wherein the shallow doped portion increases an electron mobility in the layer up to a threshold level. 12. The computer usable program product of claim 1, further comprising:
program instructions to remove, as a part of the exposing the layer to the mixed plasma, oxygen from an oxide molecule in the layer, wherein the removing the oxygen causes the dopant to reach the depth. 13. The computer usable program product of claim 1, wherein the dopant is Silicon, and wherein the compound is Silane. 14. The computer usable program product of claim 1, wherein the gas is one of Argon and Helium. | A gas is ionized into a plasma. A compound of a dopant is mixed into the plasma, forming a mixed plasma. Using a semiconductor device fabrication system, a layer of III-V material is exposed to the mixed plasma to dope the layer with the dopant up to a depth in the layer, forming a shallow doped portion of the layer. The depth of the dopant is controlled by a second layer of the dopant formed at the shallow doped portion of the layer. The second layer is exposed to a solution, where the solution is prepared to erode the dopant in the second layer at a first rate. After an elapsed period, the solution is removed from the second layer, wherein the elapsed period is insufficient to erode a total depth of the layer and the shallow doped portion by more than a tolerance erosion amount.1. An apparatus comprising:
a first component to ionize a gas into a plasma; a second component to mix a compound of a dopant into the plasma, forming a mixed plasma; a third component to expose, using a semiconductor device fabrication system, a layer of III-V material to the mixed plasma to dope the layer with the dopant up to a depth in the layer, forming a shallow doped portion of the layer; a fourth component to control the depth of the dopant by a second layer of the dopant formed at the shallow doped portion of the layer; a fifth component to expose the second layer to a solution, the solution prepared to erode the dopant in the second layer at a first rate; and a sixth component to remove, after an elapsed period, the solution from the second layer, wherein the elapsed period is insufficient to erode a total depth of the layer and the shallow doped portion by more than a tolerance erosion amount. 2. The computer usable program product of claim 1, further comprising:
program instructions to compute, using a processor and a memory, the elapsed period as a function of the temperature. 3. The computer usable program product of claim 2, wherein the function is an inverse relationship function. 4. The computer usable program product of claim 1, wherein the solution is heated to a temperature. 5. The computer usable program product of claim 4, wherein the temperature is in a range that includes sixty degrees Celsius. 6. The computer usable program product of claim 1, wherein the solution comprises Tetra Methyl Ammonium Hydroxide (TMAH) that has been diluted to a ratio. 7. The computer usable program product of claim 6, wherein the ratio is a percentage range that includes twenty-five percent. 8. The computer usable program product of claim 1, further comprising:
program instructions to adjust an amount of time the layer is exposed to the mixed plasma to adjust an amount of the dopant in the second layer. 9. The computer usable program product of claim 1, further comprising:
program instructions to deposit, using the mixed plasma, the second layer of the dopant over the doped portion of the layer. 10. The computer usable program product of claim 1, further comprising:
program instructions to adjust an amount of the compound mixed into the plasma to adjust a speed of depositing the second layer. 11. The computer usable program product of claim 1, wherein the shallow doped portion increases an electron mobility in the layer up to a threshold level. 12. The computer usable program product of claim 1, further comprising:
program instructions to remove, as a part of the exposing the layer to the mixed plasma, oxygen from an oxide molecule in the layer, wherein the removing the oxygen causes the dopant to reach the depth. 13. The computer usable program product of claim 1, wherein the dopant is Silicon, and wherein the compound is Silane. 14. The computer usable program product of claim 1, wherein the gas is one of Argon and Helium. | 2,800 |
11,655 | 11,655 | 16,013,755 | 2,848 | A circuit component for a display includes a substrate and a circuit trace having a predetermined pattern disposed on a surface of the substrate. A plurality of semiconductor die are connected to the substrate via the circuit trace. The plurality of semiconductor die are distributed across the surface of the substrate. One or more substrate orientation datum points are disposed on the substrate. The substrate orientation datum points are readable via a sensor of an apparatus that performs a transfer of the plurality of semiconductor die from a supply of die. The substrate orientation datum points provide information regarding positions on the circuit trace. The positions correspond to transfer locations for the plurality of semiconductor die, respectively. | 1. A circuit component for a display, comprising:
a substrate; a circuit trace having a predetermined pattern disposed on a surface of the substrate; a plurality of semiconductor die connected to the substrate via the circuit trace, the plurality of semiconductor die being distributed across the surface of the substrate; and one or more substrate orientation datum points disposed on the substrate, the substrate orientation datum points being readable via a sensor of an apparatus that performs a transfer of the plurality of semiconductor die from a supply of die, and the substrate orientation datum points providing information regarding positions on the circuit trace, the positions corresponding to transfer locations for the plurality of semiconductor die, respectively. 2. The circuit component according to claim 1, wherein the circuit trace is a conductive ink and a thickness of the circuit trace ranges from about 5 microns to about 20 microns. 3. The circuit component according to claim 1, wherein the predetermined pattern includes an array of lines along the surface of the substrate. 4. The circuit component according to claim 1, wherein a material of the substrate includes a polymer. 5. The circuit component according to claim 1, wherein the polymer includes one of a polyester, an acrylic, a polyimide, or a polycarbonate. 6. The circuit component according to claim 1, wherein a height of the plurality of semiconductor die ranges from about 12.5 microns to about 200 microns. 7. The circuit component according to claim 1, wherein the plurality of semiconductor die are electrically interconnected via the circuit trace. 8. The circuit component according to claim 1, wherein the circuit trace includes a silver-coated copper particle. 9. The circuit component according to claim 1, wherein a height of the plurality of semiconductor die ranges from about 25 microns to no greater than 100 microns. 10. The circuit component according to claim 1, wherein the plurality of semiconductor die includes LEDs. 11. A circuit component for a display, comprising:
a substrate; a circuit trace having a predetermined pattern disposed on a surface of the substrate; a plurality of unpackaged micro-sized LEDs connected to the substrate via the circuit trace, the plurality of unpackaged micro-sized LEDs being distributed across the surface of the substrate; and one or more substrate orientation datum points disposed on the substrate, the substrate orientation datum points being readable via a sensor of an apparatus that performs a transfer of the plurality of unpackaged micro-sized LEDs from a supply of unpackaged micro-sized LEDs, and the substrate orientation datum points providing information regarding positions on the circuit trace, the positions corresponding to transfer locations for the plurality of unpackaged micro-sized LEDs, respectively. 12. A circuit component, comprising:
a substrate; a circuit trace disposed on a surface of the substrate; a plurality of unpackaged LEDs connected to the substrate via the circuit trace; and one or more substrate orientation datum points disposed on the substrate, wherein the circuit component is formed by a method including: using the one or more substrate orientation datum points to orient at least one of the surface of the substrate or an unpackaged LED of the plurality of unpackaged LEDs such that the circuit trace is aligned for a transfer of the unpackaged LED to the circuit trace, and attaching the unpackaged LED to the substrate, and wherein the substrate orientation datum points are readable via a sensor of an apparatus that performs the method, the substrate orientation datum points providing information regarding positions of the circuit trace on the substrate, thereby indicating a plurality of transfer locations for the plurality of unpackaged LEDs, respectively. | A circuit component for a display includes a substrate and a circuit trace having a predetermined pattern disposed on a surface of the substrate. A plurality of semiconductor die are connected to the substrate via the circuit trace. The plurality of semiconductor die are distributed across the surface of the substrate. One or more substrate orientation datum points are disposed on the substrate. The substrate orientation datum points are readable via a sensor of an apparatus that performs a transfer of the plurality of semiconductor die from a supply of die. The substrate orientation datum points provide information regarding positions on the circuit trace. The positions correspond to transfer locations for the plurality of semiconductor die, respectively.1. A circuit component for a display, comprising:
a substrate; a circuit trace having a predetermined pattern disposed on a surface of the substrate; a plurality of semiconductor die connected to the substrate via the circuit trace, the plurality of semiconductor die being distributed across the surface of the substrate; and one or more substrate orientation datum points disposed on the substrate, the substrate orientation datum points being readable via a sensor of an apparatus that performs a transfer of the plurality of semiconductor die from a supply of die, and the substrate orientation datum points providing information regarding positions on the circuit trace, the positions corresponding to transfer locations for the plurality of semiconductor die, respectively. 2. The circuit component according to claim 1, wherein the circuit trace is a conductive ink and a thickness of the circuit trace ranges from about 5 microns to about 20 microns. 3. The circuit component according to claim 1, wherein the predetermined pattern includes an array of lines along the surface of the substrate. 4. The circuit component according to claim 1, wherein a material of the substrate includes a polymer. 5. The circuit component according to claim 1, wherein the polymer includes one of a polyester, an acrylic, a polyimide, or a polycarbonate. 6. The circuit component according to claim 1, wherein a height of the plurality of semiconductor die ranges from about 12.5 microns to about 200 microns. 7. The circuit component according to claim 1, wherein the plurality of semiconductor die are electrically interconnected via the circuit trace. 8. The circuit component according to claim 1, wherein the circuit trace includes a silver-coated copper particle. 9. The circuit component according to claim 1, wherein a height of the plurality of semiconductor die ranges from about 25 microns to no greater than 100 microns. 10. The circuit component according to claim 1, wherein the plurality of semiconductor die includes LEDs. 11. A circuit component for a display, comprising:
a substrate; a circuit trace having a predetermined pattern disposed on a surface of the substrate; a plurality of unpackaged micro-sized LEDs connected to the substrate via the circuit trace, the plurality of unpackaged micro-sized LEDs being distributed across the surface of the substrate; and one or more substrate orientation datum points disposed on the substrate, the substrate orientation datum points being readable via a sensor of an apparatus that performs a transfer of the plurality of unpackaged micro-sized LEDs from a supply of unpackaged micro-sized LEDs, and the substrate orientation datum points providing information regarding positions on the circuit trace, the positions corresponding to transfer locations for the plurality of unpackaged micro-sized LEDs, respectively. 12. A circuit component, comprising:
a substrate; a circuit trace disposed on a surface of the substrate; a plurality of unpackaged LEDs connected to the substrate via the circuit trace; and one or more substrate orientation datum points disposed on the substrate, wherein the circuit component is formed by a method including: using the one or more substrate orientation datum points to orient at least one of the surface of the substrate or an unpackaged LED of the plurality of unpackaged LEDs such that the circuit trace is aligned for a transfer of the unpackaged LED to the circuit trace, and attaching the unpackaged LED to the substrate, and wherein the substrate orientation datum points are readable via a sensor of an apparatus that performs the method, the substrate orientation datum points providing information regarding positions of the circuit trace on the substrate, thereby indicating a plurality of transfer locations for the plurality of unpackaged LEDs, respectively. | 2,800 |
11,656 | 11,656 | 15,067,878 | 2,846 | A vehicle includes an electric machine, an IGBT, and a gate driver. The IGBT has a gate, an emitter, and a collector and is configured to flow an electric charge through a phase of the electric machine. The gate driver is configured to flow current onto the gate at a first level, and in response to a time integral of a voltage across the phase exceeding a predetermined level, transition from the first level to a second level less than the first level. | 1. A vehicle comprising:
an electric machine; an IGBT having a gate, an emitter, and a collector, configured to flow an electric charge through a phase of the electric machine; and a gate driver configured to flow current onto the gate at a first level, and in response to a time integral of a voltage across the phase exceeding a predetermined level, transition from the first level to a second level less than the first level. 2. The vehicle of claim 1, wherein the predetermined level is based on an electric potential of the electric charge. 3. The vehicle of claim 1, wherein the first level is based on a gate capacitance of the IGBT, and an electric potential of the electric charge. 4. The vehicle of claim 1 further comprising a freewheeling diode coupled anti-parallel with the IGBT, wherein the predetermined level is derived from an electric potential of the electric charge such that an overshoot voltage across the freewheeling diode does not exceed a diode limit. 5. The vehicle of claim 4, wherein the second level is based on a rate of change of collector current of the IGBT such that a maximum diode voltage does not exceed a breakdown threshold. 6. The vehicle of claim 1, wherein the time integral is for a period beginning when the gate driver receives an IGBT turn-on signal and ending when the gate driver turns off the IGBT. 7. The vehicle of claim 1, wherein the first level is based on a parasitic inductance associated with the gate of the IGBT, and a temperature of the IGBT. 8. A method of controlling an IGBT of a power system comprising:
by a gate driver, flowing a current at a first level onto a gate of an IGBT; and in response to a time integral of a voltage across the IGBT exceeding a predetermined threshold, transitioning the current from the first level to a second level less than the first level. 9. The method of claim 8, wherein the first level is based on a gate capacitance of the IGBT. 10. The method of claim 8, wherein the second level is based on a rate of change of collector current of the IGBT such that a reverse bias diode voltage across a freewheeling diode, coupled anti-parallel with the IGBT, does not exceed a breakdown threshold. 11. The method of claim 8, wherein the time integral is for a period beginning when the gate driver receives an IGBT turn-on signal and ending when the gate driver turns off the IGBT. 12. The method of claim 8, wherein the predetermined threshold is derived from an electric potential associated with the current such that an overshoot voltage across a freewheeling diode coupled anti-parallel with the IGBT does not exceed a diode limit. 13. A vehicle powertrain comprising:
an IGBT having a gate, an emitter and a collector; and a gate driver configured to flow current onto the gate at a first level, and in response to a time integral of resulting collector to emitter voltage exceeding a predetermined level, transition from the first level to a second level less than the first level. 14. The vehicle powertrain of claim 13, wherein the first level is based on a gate capacitance of the IGBT and a parasitic inductance of the IGBT. 15. The vehicle powertrain of claim 13 further comprising a freewheeling diode coupled anti-parallel with the IGBT, wherein the predetermined level is derived from a voltage associated with the current such that an overshoot voltage across the freewheeling diode does not exceed a diode limit. 16. The vehicle powertrain of claim 15, wherein the second level is based on a rate of change of collector current of the IGBT such that a maximum diode voltage does not exceed a breakdown threshold. 17. The vehicle powertrain of claim 13, wherein the time integral is for a period beginning when the gate driver receives an IGBT turn-on signal and ending when the gate driver turns off the IGBT. 18. The vehicle powertrain of claim 13, wherein the first level is based on a parasitic inductance associated with the gate of the IGBT, and a temperature of the IGBT. | A vehicle includes an electric machine, an IGBT, and a gate driver. The IGBT has a gate, an emitter, and a collector and is configured to flow an electric charge through a phase of the electric machine. The gate driver is configured to flow current onto the gate at a first level, and in response to a time integral of a voltage across the phase exceeding a predetermined level, transition from the first level to a second level less than the first level.1. A vehicle comprising:
an electric machine; an IGBT having a gate, an emitter, and a collector, configured to flow an electric charge through a phase of the electric machine; and a gate driver configured to flow current onto the gate at a first level, and in response to a time integral of a voltage across the phase exceeding a predetermined level, transition from the first level to a second level less than the first level. 2. The vehicle of claim 1, wherein the predetermined level is based on an electric potential of the electric charge. 3. The vehicle of claim 1, wherein the first level is based on a gate capacitance of the IGBT, and an electric potential of the electric charge. 4. The vehicle of claim 1 further comprising a freewheeling diode coupled anti-parallel with the IGBT, wherein the predetermined level is derived from an electric potential of the electric charge such that an overshoot voltage across the freewheeling diode does not exceed a diode limit. 5. The vehicle of claim 4, wherein the second level is based on a rate of change of collector current of the IGBT such that a maximum diode voltage does not exceed a breakdown threshold. 6. The vehicle of claim 1, wherein the time integral is for a period beginning when the gate driver receives an IGBT turn-on signal and ending when the gate driver turns off the IGBT. 7. The vehicle of claim 1, wherein the first level is based on a parasitic inductance associated with the gate of the IGBT, and a temperature of the IGBT. 8. A method of controlling an IGBT of a power system comprising:
by a gate driver, flowing a current at a first level onto a gate of an IGBT; and in response to a time integral of a voltage across the IGBT exceeding a predetermined threshold, transitioning the current from the first level to a second level less than the first level. 9. The method of claim 8, wherein the first level is based on a gate capacitance of the IGBT. 10. The method of claim 8, wherein the second level is based on a rate of change of collector current of the IGBT such that a reverse bias diode voltage across a freewheeling diode, coupled anti-parallel with the IGBT, does not exceed a breakdown threshold. 11. The method of claim 8, wherein the time integral is for a period beginning when the gate driver receives an IGBT turn-on signal and ending when the gate driver turns off the IGBT. 12. The method of claim 8, wherein the predetermined threshold is derived from an electric potential associated with the current such that an overshoot voltage across a freewheeling diode coupled anti-parallel with the IGBT does not exceed a diode limit. 13. A vehicle powertrain comprising:
an IGBT having a gate, an emitter and a collector; and a gate driver configured to flow current onto the gate at a first level, and in response to a time integral of resulting collector to emitter voltage exceeding a predetermined level, transition from the first level to a second level less than the first level. 14. The vehicle powertrain of claim 13, wherein the first level is based on a gate capacitance of the IGBT and a parasitic inductance of the IGBT. 15. The vehicle powertrain of claim 13 further comprising a freewheeling diode coupled anti-parallel with the IGBT, wherein the predetermined level is derived from a voltage associated with the current such that an overshoot voltage across the freewheeling diode does not exceed a diode limit. 16. The vehicle powertrain of claim 15, wherein the second level is based on a rate of change of collector current of the IGBT such that a maximum diode voltage does not exceed a breakdown threshold. 17. The vehicle powertrain of claim 13, wherein the time integral is for a period beginning when the gate driver receives an IGBT turn-on signal and ending when the gate driver turns off the IGBT. 18. The vehicle powertrain of claim 13, wherein the first level is based on a parasitic inductance associated with the gate of the IGBT, and a temperature of the IGBT. | 2,800 |
11,657 | 11,657 | 15,454,525 | 2,875 | A luminaire includes a housing containing a control component. A cover is connected to the housing having an outer wall, a mounting section, and a chamber. A divider is positioned between the housing and the cover and includes a conductor opening. A light assembly is connected to the mounting section and operatively connected to the control component. | 1. A luminaire comprising:
a housing for containing a control component; a cover connected to the housing having an outer wall, a mounting section, and a chamber including a set of heat fins in thermal communication with the mounting section; a divider positioned between the housing and the cover and including a conductor opening; and a light assembly connected to the mounting section and operatively connected to the control component. 2. The luminaire of claim 1, further comprising a conductor gasket connected to the divider. 3. The luminaire of claim 2, wherein the conductor gasket includes a flange extending through the conductor opening and a projection extending through the divider. 4. The luminaire of claim 1, wherein the set of heat fins includes a minor heat fin having a first surface area and a major heat fin having a second surface area greater than the first surface area. 5. The luminaire of claim 4, wherein the set of heat fins includes alternating major and minor heat fins. 6. The luminaire of claim 1, further comprising a conductor channel positioned in the chamber and having an opening in communication with the mounting section. 7. The luminaire of claim 1, wherein an outer gasket is positioned between the divider and the cover. 8. The luminaire of claim 1, wherein the housing includes a second conductor opening, a recessed area is formed around the conductor opening, and a housing conductor gasket is positioned in recess. 9. A luminaire comprising:
a housing for containing a control component; a cover connected to the housing having an outer wall, a mounting section, a chamber, and a conductor channel positioned in the chamber and having an opening in communication with the mounting section; a divider positioned between the housing and the cover and including a conductor opening; and a light assembly connected to the mounting section and operatively connected to the control component. 10. The luminaire of claim 9, wherein the conductor channel extends from a front portion of the outer wall toward a rear portion of the chamber. 11. The luminaire of claim 9, further comprising a passage member positioned between the conductor channel and the mounting section. 12. The luminaire of claim 9, further comprising a conductor gasket connected to the divider and extending into the conductor channel. 13. The luminaire of claim 12, wherein the conductor gasket includes a flange positioned in the conductor opening. 14. The luminaire of claim 9, wherein the housing includes a top wall and a pair of sidewalls and a portion of the outer wall overlaps at least a portion of the top wall and the side walls. 15. The luminaire of claim 9, further comprising a set of heat fins positioned in the chamber. 16. A luminaire comprising:
a housing including a back wall, a top wall, a bottom wall, a pair of side walls, and an open front; a cover connected to the housing having an outer wall, a mounting section, and a chamber; a divider positioned between the housing and the cover and including a conductor opening providing communication between the cover and the housing; a control assembly positioned in the housing; and a light assembly connected to the mounting section and operatively connected to the control assembly. 17. The luminaire of claim 16, wherein a portion of the outer wall overlaps at least a portion of the top wall and the side walls. 18. The luminaire of claim 16, further comprising a conductor gasket connected to the divider and an outer gasket connected to the divider between the housing and the cover. 19. The luminaire of claim 16, further comprising a set of heat fins and a conductor channel positioned in the chamber. 20. The luminaire of claim 16, wherein the control assembly includes a driver and a sensor. | A luminaire includes a housing containing a control component. A cover is connected to the housing having an outer wall, a mounting section, and a chamber. A divider is positioned between the housing and the cover and includes a conductor opening. A light assembly is connected to the mounting section and operatively connected to the control component.1. A luminaire comprising:
a housing for containing a control component; a cover connected to the housing having an outer wall, a mounting section, and a chamber including a set of heat fins in thermal communication with the mounting section; a divider positioned between the housing and the cover and including a conductor opening; and a light assembly connected to the mounting section and operatively connected to the control component. 2. The luminaire of claim 1, further comprising a conductor gasket connected to the divider. 3. The luminaire of claim 2, wherein the conductor gasket includes a flange extending through the conductor opening and a projection extending through the divider. 4. The luminaire of claim 1, wherein the set of heat fins includes a minor heat fin having a first surface area and a major heat fin having a second surface area greater than the first surface area. 5. The luminaire of claim 4, wherein the set of heat fins includes alternating major and minor heat fins. 6. The luminaire of claim 1, further comprising a conductor channel positioned in the chamber and having an opening in communication with the mounting section. 7. The luminaire of claim 1, wherein an outer gasket is positioned between the divider and the cover. 8. The luminaire of claim 1, wherein the housing includes a second conductor opening, a recessed area is formed around the conductor opening, and a housing conductor gasket is positioned in recess. 9. A luminaire comprising:
a housing for containing a control component; a cover connected to the housing having an outer wall, a mounting section, a chamber, and a conductor channel positioned in the chamber and having an opening in communication with the mounting section; a divider positioned between the housing and the cover and including a conductor opening; and a light assembly connected to the mounting section and operatively connected to the control component. 10. The luminaire of claim 9, wherein the conductor channel extends from a front portion of the outer wall toward a rear portion of the chamber. 11. The luminaire of claim 9, further comprising a passage member positioned between the conductor channel and the mounting section. 12. The luminaire of claim 9, further comprising a conductor gasket connected to the divider and extending into the conductor channel. 13. The luminaire of claim 12, wherein the conductor gasket includes a flange positioned in the conductor opening. 14. The luminaire of claim 9, wherein the housing includes a top wall and a pair of sidewalls and a portion of the outer wall overlaps at least a portion of the top wall and the side walls. 15. The luminaire of claim 9, further comprising a set of heat fins positioned in the chamber. 16. A luminaire comprising:
a housing including a back wall, a top wall, a bottom wall, a pair of side walls, and an open front; a cover connected to the housing having an outer wall, a mounting section, and a chamber; a divider positioned between the housing and the cover and including a conductor opening providing communication between the cover and the housing; a control assembly positioned in the housing; and a light assembly connected to the mounting section and operatively connected to the control assembly. 17. The luminaire of claim 16, wherein a portion of the outer wall overlaps at least a portion of the top wall and the side walls. 18. The luminaire of claim 16, further comprising a conductor gasket connected to the divider and an outer gasket connected to the divider between the housing and the cover. 19. The luminaire of claim 16, further comprising a set of heat fins and a conductor channel positioned in the chamber. 20. The luminaire of claim 16, wherein the control assembly includes a driver and a sensor. | 2,800 |
11,658 | 11,658 | 14,661,328 | 2,876 | A point of sale device including an LCD display, a contactless payment antenna arranged in propinquity to the LCD display, LCD control circuitry and contactless communication circuitry associated with the contactless payment antenna, the LCD control circuitry and the contactless communication circuitry operating at least partially in time coordination with each other in order to prevent interference therebetween. | 1. (canceled) 2. A point of sale device according to claim 10 and wherein said LCD control circuitry has at least first and second refresh rates and is operative at a first, lower refresh rate during operation of said contactless communication circuitry in carrying out a transaction and at a second, higher refresh rate at times when said contactless communication circuitry is not carrying out a transaction. 3. A point of sale device according to claim 10 and wherein said contactless communication circuitry is operative at least during at least one of a vertical blanking interval (VBI), a VSYNCH signal duration and an HSYNCH signal duration in the operation of said LCD control circuitry. 4. A point of sale device according to claim 10 and wherein said contactless payment antenna is disposed behind said LCD display. 5. A point of sale device according to claim 10 and wherein said contactless payment antenna is disposed surrounding said LCD display. 6. A point of sale device according to claim 10 and wherein said LCD control circuitry has at least first and second duty cycles for writing of data to said LCD display and is operative at a first, lower duty cycle during operation of said contactless communication circuitry in carrying out a transaction and at a second, higher duty cycle at times when said contactless communication circuitry is not carrying out a transaction. 7. (canceled) 8. A method of operating an LCD display in propinquity to a contactless antenna according to claim 20 and also comprising operating said LCS control circuitry at a first, lower refresh rate during operation of said contactless communication circuitry in carrying out a transaction and at a second, higher refresh rate at times when said contactless communication circuitry is not carrying out a transaction. 9. A method of operating an LCD display in propinquity to a contactless antenna according to claim 20 and also comprising operating said contactless communication circuitry at least during at least one of a vertical blanking interval (VBI), a VSYNC signal duration and an HSYNC signal duration in the operation of said LCD control circuitry. 10. A point of sale device comprising:
an LCD display; a contactless payment antenna arranged in propinquity to said LCD display; LCD control circuitry; contactless communication circuitry associated with said contactless payment antenna; and coordination control circuitry operative to control operation of said LCD control circuitry thereby to reduce interference to operation of said contactless communication circuitry resulting from operation of said LCD display, said coordination control circuitry being operative to cause the operation of said LCD control circuitry and said contactless communication circuitry to be such that said contactless communication circuitry generally operates when said LCD display is operating and when data is not being written on said LCD display, in order to reduce interference therebetween. 11. A point of sale device according to claim 10 and wherein said coordination control circuitry is operative to cause said LCD control circuitry and said contactless communication circuitry to operate in time coordination with each other in order to reduce interference therebetween. 12. (canceled) 13. A point of sale device according to claim 10 and wherein:
said LCD control circuitry provides a clock signal and a data enable signal; and
said coordination control circuitry is operative to vary at least one of said clock signal and said data enable signal in order to reduce interference between said LCD display and operation of said contactless communication circuitry. 14. A point of sale device according to claim 13 and wherein said coordination control circuitry is operative to disable said data enable signal during at least some of transmit/receive time duration of said contactless communication circuitry. 15. A point of sale device according to claim 13 and wherein said coordination control circuitry is operative to disable said data enable signal during at least one of a polling operation and a payment data transfer operation of said contactless communication circuitry. 16. A point of sale device according to claim 13 and wherein said coordination control circuitry is operative to at least one of slow said clock signal and stop said clock signal during at least some of transmit/receive time duration of said contactless communication circuitry. 17. A point of sale device according to claim 13 and wherein said coordination control circuitry is operative to at least one of slow said clock signal and stop said clock signal during at least one of a polling operation and a payment data transfer operation of said contactless communication circuitry. 18. A point of sale device according to claim 13 and wherein said coordination control circuitry is operative to said at least one of slow said clock signal and stop said clock signal to an extent responsive to an amount of data to be transferred during payment data transfer operation of said contactless communication circuitry. 19. A point of sale device according to claim 10 and wherein said coordination control circuitry is operative to at least partially synchronize payment data transfer operation of said contactless communication circuitry with an HSYNC signal of said LCD display. 20. A method of operating an LCD display in propinquity to a contactless antenna, the method comprising:
providing LCD control circuitry and contactless communication circuitry associated with said contactless antenna; and controlling operation of said LCD control circuitry thereby to reduce interference to operation of said contactless communication circuitry resulting from operation of said LCD display, said controlling operation comprising operating said contactless communication circuitry generally when said LCD display is operating and when data is not being written on said LCD display, in order to reduce interference therebetween. 21. (canceled) | A point of sale device including an LCD display, a contactless payment antenna arranged in propinquity to the LCD display, LCD control circuitry and contactless communication circuitry associated with the contactless payment antenna, the LCD control circuitry and the contactless communication circuitry operating at least partially in time coordination with each other in order to prevent interference therebetween.1. (canceled) 2. A point of sale device according to claim 10 and wherein said LCD control circuitry has at least first and second refresh rates and is operative at a first, lower refresh rate during operation of said contactless communication circuitry in carrying out a transaction and at a second, higher refresh rate at times when said contactless communication circuitry is not carrying out a transaction. 3. A point of sale device according to claim 10 and wherein said contactless communication circuitry is operative at least during at least one of a vertical blanking interval (VBI), a VSYNCH signal duration and an HSYNCH signal duration in the operation of said LCD control circuitry. 4. A point of sale device according to claim 10 and wherein said contactless payment antenna is disposed behind said LCD display. 5. A point of sale device according to claim 10 and wherein said contactless payment antenna is disposed surrounding said LCD display. 6. A point of sale device according to claim 10 and wherein said LCD control circuitry has at least first and second duty cycles for writing of data to said LCD display and is operative at a first, lower duty cycle during operation of said contactless communication circuitry in carrying out a transaction and at a second, higher duty cycle at times when said contactless communication circuitry is not carrying out a transaction. 7. (canceled) 8. A method of operating an LCD display in propinquity to a contactless antenna according to claim 20 and also comprising operating said LCS control circuitry at a first, lower refresh rate during operation of said contactless communication circuitry in carrying out a transaction and at a second, higher refresh rate at times when said contactless communication circuitry is not carrying out a transaction. 9. A method of operating an LCD display in propinquity to a contactless antenna according to claim 20 and also comprising operating said contactless communication circuitry at least during at least one of a vertical blanking interval (VBI), a VSYNC signal duration and an HSYNC signal duration in the operation of said LCD control circuitry. 10. A point of sale device comprising:
an LCD display; a contactless payment antenna arranged in propinquity to said LCD display; LCD control circuitry; contactless communication circuitry associated with said contactless payment antenna; and coordination control circuitry operative to control operation of said LCD control circuitry thereby to reduce interference to operation of said contactless communication circuitry resulting from operation of said LCD display, said coordination control circuitry being operative to cause the operation of said LCD control circuitry and said contactless communication circuitry to be such that said contactless communication circuitry generally operates when said LCD display is operating and when data is not being written on said LCD display, in order to reduce interference therebetween. 11. A point of sale device according to claim 10 and wherein said coordination control circuitry is operative to cause said LCD control circuitry and said contactless communication circuitry to operate in time coordination with each other in order to reduce interference therebetween. 12. (canceled) 13. A point of sale device according to claim 10 and wherein:
said LCD control circuitry provides a clock signal and a data enable signal; and
said coordination control circuitry is operative to vary at least one of said clock signal and said data enable signal in order to reduce interference between said LCD display and operation of said contactless communication circuitry. 14. A point of sale device according to claim 13 and wherein said coordination control circuitry is operative to disable said data enable signal during at least some of transmit/receive time duration of said contactless communication circuitry. 15. A point of sale device according to claim 13 and wherein said coordination control circuitry is operative to disable said data enable signal during at least one of a polling operation and a payment data transfer operation of said contactless communication circuitry. 16. A point of sale device according to claim 13 and wherein said coordination control circuitry is operative to at least one of slow said clock signal and stop said clock signal during at least some of transmit/receive time duration of said contactless communication circuitry. 17. A point of sale device according to claim 13 and wherein said coordination control circuitry is operative to at least one of slow said clock signal and stop said clock signal during at least one of a polling operation and a payment data transfer operation of said contactless communication circuitry. 18. A point of sale device according to claim 13 and wherein said coordination control circuitry is operative to said at least one of slow said clock signal and stop said clock signal to an extent responsive to an amount of data to be transferred during payment data transfer operation of said contactless communication circuitry. 19. A point of sale device according to claim 10 and wherein said coordination control circuitry is operative to at least partially synchronize payment data transfer operation of said contactless communication circuitry with an HSYNC signal of said LCD display. 20. A method of operating an LCD display in propinquity to a contactless antenna, the method comprising:
providing LCD control circuitry and contactless communication circuitry associated with said contactless antenna; and controlling operation of said LCD control circuitry thereby to reduce interference to operation of said contactless communication circuitry resulting from operation of said LCD display, said controlling operation comprising operating said contactless communication circuitry generally when said LCD display is operating and when data is not being written on said LCD display, in order to reduce interference therebetween. 21. (canceled) | 2,800 |
11,659 | 11,659 | 15,372,818 | 2,832 | A power transmission device for a vehicle is comprised of a motor including a rotor shaft and a stator having an electromagnetic coil; an inverter configured to generate an alternating current, the inverter being connected with the coil to controllably rotate the rotor shaft relative to the stator; a gear set including an input shaft coupled with and rotated by the rotor shaft, an output shaft and gears so meshed as to transmit torque of the input shaft to the output shaft; and a grounding path electrically connecting a part of the gear set with a body of the vehicle, the part being so disposed as to have the input shaft electrically interposed between the part and the rotor shaft. | 1. A gear system for a vehicle used in combination with an inverter and a motor electrically connected to and driven by the inverter, comprising:
a gear casing defining a room spatially separate from a room housing the inverter and the motor; a gear set confined in the gear casing, the gear set including an input shaft coupled with and rotated by the motor, an output shaft, meshed gears, and one or more counter shafts driven only by the meshed gears to mediate transmission of the torque from the input shaft to the output shaft; and a grounding path electrically connecting a connection point on the one or more counter shafts with a body of the vehicle, the connection point being so selected as to interpose any engagement among the meshed gears between the input shaft and the connection point, whereby the grounding path functions as a resistor for attenuating radio noise flowing from the inverter beyond the connection point toward the output shaft. 2. The gear system of claim 1, further comprising:
a coupling drivingly interposed between a rotor shaft of the motor and the input shaft, the coupling being electrically interposed between the connection point and the rotor shaft. 3. The gear system of claim 1, further comprising:
a brush in slidable contact with one selected from the group consisting of the input shaft, the one or more counter shafts and the output shaft and connected with the grounding path so as to electrically connect the connection point of the one or more counter shafts of the gear set with the body of the vehicle. 4. The gear system of claim 3, wherein the gear casing is electrically connected with the grounding path; and
the power transmission device further comprises a lead line electrically connected with the brush and the gear casing. 5. The gear system of claim 3, further comprising:
an oil seal intervening between the gear set and the brush. 6. The gear system of claim 5, further comprising:
a brush chamber housing the brush; and a breather communicating with the brush chamber and an outside of the brush chamber. 7. The gear system of claim 1, wherein the connection point is an end portion of any of the one or more counter shafts. | A power transmission device for a vehicle is comprised of a motor including a rotor shaft and a stator having an electromagnetic coil; an inverter configured to generate an alternating current, the inverter being connected with the coil to controllably rotate the rotor shaft relative to the stator; a gear set including an input shaft coupled with and rotated by the rotor shaft, an output shaft and gears so meshed as to transmit torque of the input shaft to the output shaft; and a grounding path electrically connecting a part of the gear set with a body of the vehicle, the part being so disposed as to have the input shaft electrically interposed between the part and the rotor shaft.1. A gear system for a vehicle used in combination with an inverter and a motor electrically connected to and driven by the inverter, comprising:
a gear casing defining a room spatially separate from a room housing the inverter and the motor; a gear set confined in the gear casing, the gear set including an input shaft coupled with and rotated by the motor, an output shaft, meshed gears, and one or more counter shafts driven only by the meshed gears to mediate transmission of the torque from the input shaft to the output shaft; and a grounding path electrically connecting a connection point on the one or more counter shafts with a body of the vehicle, the connection point being so selected as to interpose any engagement among the meshed gears between the input shaft and the connection point, whereby the grounding path functions as a resistor for attenuating radio noise flowing from the inverter beyond the connection point toward the output shaft. 2. The gear system of claim 1, further comprising:
a coupling drivingly interposed between a rotor shaft of the motor and the input shaft, the coupling being electrically interposed between the connection point and the rotor shaft. 3. The gear system of claim 1, further comprising:
a brush in slidable contact with one selected from the group consisting of the input shaft, the one or more counter shafts and the output shaft and connected with the grounding path so as to electrically connect the connection point of the one or more counter shafts of the gear set with the body of the vehicle. 4. The gear system of claim 3, wherein the gear casing is electrically connected with the grounding path; and
the power transmission device further comprises a lead line electrically connected with the brush and the gear casing. 5. The gear system of claim 3, further comprising:
an oil seal intervening between the gear set and the brush. 6. The gear system of claim 5, further comprising:
a brush chamber housing the brush; and a breather communicating with the brush chamber and an outside of the brush chamber. 7. The gear system of claim 1, wherein the connection point is an end portion of any of the one or more counter shafts. | 2,800 |
11,660 | 11,660 | 14,717,345 | 2,847 | A shielded cable assembly capable of transmitting signals at speeds of 3.5 Gigabits per second (Gb/s) or higher without modulation or encoding over a single pair of conductors. The cable has a characteristic impedance of 95 Ohms and can support transmission data according to either USB 3.0 or HDMI 1.4 performance specifications. The wire cable includes a pair of conductors, a shield surrounding the conductors, and a dielectric structure configured to maintain a first predetermined spacing between the conductors and a second predetermined spacing between said conductors and said shield. The shield includes an inner shield conductor enclosing the dielectric structure and an outer shield conductor enclosing the inner shield conductor. | 1. An assembly configured to transmit electrical signals, comprising:
a wire cable having
a first inner conductor and second inner conductor;
a shield surrounding the first inner conductor and the second inner conductor; and
a dielectric structure configured to maintain a first predetermined spacing between the first inner conductor and the second inner conductor and a second predetermined spacing between said the first inner conductor and the second inner conductor and said shield, wherein the shield comprises
an inner shield conductor at least partially enclosing the dielectric structure, thereby establishing a characteristic impedance of the wire cable, and
an outer shield conductor at least partially enclosing the inner shield conductor and in electrical communication with the inner shield conductor. 2. The assembly according to claim 1, wherein said assembly does not include a separate drain wire conductor. 3. The assembly according to claim 1, wherein the dielectric structure is configured to provide consistent radial spacing between the first and second inner conductor and the inner shield conductor. 4. The assembly according to claim 1, wherein the dielectric structure comprises a first dielectric insulator enclosing the first inner conductor and a second dielectric insulator enclosing the second inner conductor, wherein the first dielectric insulator and the second dielectric insulator are bonded together, thereby providing consistent lateral spacing between the first inner conductor and the second inner conductor. 5. The assembly according to claim 4, wherein the dielectric structure further comprises a third dielectric insulator enclosing the first dielectric insulator and the second dielectric insulator, thereby providing consistent radial spacing between the first and second inner conductor and the inner shield conductor. 6. The assembly according to claim 1, wherein the inner shield conductor is formed of an aluminized film wrapped about the dielectric structure such that a seam formed by the inner shield conductor is substantially parallel to a longitudinal axis of the wire cable and wherein a lateral length of the inner shield conductor covers at least 100 percent of a dielectric structure circumference. 7. The assembly according to claim 1, wherein the first inner conductor and the second inner conductor are not twisted one about the other. 8. The assembly according to claim 1, wherein the wire cable has the characteristic impedance of 95 Ohms. 9. The assembly according to claim 8, wherein a wire cable up to 7 meters in length is characterized as having a differential insertion loss of less than 1.5 decibels (dB) for a signal with signal frequency content less than 100 Megahertz (MHz), less than 5 dB for a signal with signal frequency content between 100 MHz and 1.25 Gigahertz (GHz), less than 7.5 dB for a signal with signal frequency content between 1.25 GHz and 2.5 GHz, and less than 25 dB for a signal with signal frequency content between 2.5 GHz and 7.5 GHz. 10. The assembly according to claim 9, wherein the wire cable is characterized as having an intra-pair skew of less than 50 picoseconds. 11. The assembly according to claim 1, wherein the assembly further comprises at least one electrical connector selected from the group consisting of:
a plug connector having
a first plug terminal including a first connection portion characterized by a generally rectangular cross section, and
a second plug terminal including a second connection portion characterized by a generally rectangular cross section, wherein the first and second plug terminals are configured to be attached to the first and second inner conductor respectively and wherein the first and second plug terminals form a mirrored pair having bilateral symmetry about a longitudinal axis; and
a receptacle connector configured to mate with said plug connector having
a first receptacle terminal including a first cantilever beam portion characterized by a generally rectangular cross section and defining a convex first contact point depending from the first cantilever beam portion, said first contact point configured to contact the first connection portion of the first plug terminal, and
a second receptacle terminal including a second cantilever beam portion characterized by a generally rectangular cross section and defining a convex second contact point depending from the second cantilever beam portion, said second contact point configured to contact the second connection portion of the second plug terminal, wherein the first and second receptacle terminals are configured to be attached to the first and second inner conductor respectively, wherein the first and second receptacle terminals form a mirrored terminal pair having bilateral symmetry about the longitudinal axis and wherein when a plug connector is connected to a corresponding receptacle connector, the major width of the first connection portion is substantially perpendicular to the major width of the first cantilever beam portion and the second connection portion is substantially perpendicular to the major width of the second cantilever beam portion. 12. The assembly according to claim 11, wherein the assembly further comprises an electrically conductive shield selected from the group consisting of:
a plug shield electrically isolated from the plug connector and longitudinally surrounding the plug connector; and a receptacle shield electrically isolated from the receptacle connector and longitudinally surrounding the receptacle connector, wherein the electrically conductive shield defines a pair of wire crimping wings that are mechanically connected to the outer shield conductor, thereby electrically connecting the electrically conductive shield to the inner shield conductor, thereby establishing the characteristic impedance of the assembly. 13. The assembly according to claim 12, wherein the receptacle shield defines an embossment proximate a location of a connection between the first inner conductor and the first receptacle terminal and a connection between the second inner conductor and the second receptacle terminal. 14. The assembly according to claim 13, wherein the assembly has the characteristic impedance of 95 Ohms. 15. The assembly according to claim 14, wherein an assembly having a wire cable up to 7 meters in length is characterized as having a differential insertion loss of less than 1.5 dB for a signal with signal frequency content less than 100 MHz, less than 5 dB for a signal with signal frequency content between 100 MHz and 1.25 GHz, less than 7.5 dB for a signal with signal frequency content between 1.25 GHz and 2.5 GHz, and less than 25 dB for a signal with signal frequency content between 2.5 GHz and 7.5 GHz. 16. The assembly according to claim 14, wherein the assembly is characterized as having an intra-pair skew of less than 50 picoseconds. 17. The assembly according to claim 12, wherein the electrically conductive shield defines a prong that is configured to penetrate the dielectric outer layer, thereby inhibiting rotation of the electrically conductive shield about the longitudinal axis. 18. The assembly according to claim 12, wherein the assembly further comprises a connector body selected from the group consisting of
a plug connector body defining a first cavity, wherein said plug connector and said plug shield are at least partially disposed within said first cavity, and a receptacle connector body defining a second cavity and configured to mate with the plug connector body, wherein said receptacle connector and said receptacle shield are at least partially disposed within said second cavity. 19. The assembly according to claim 18, wherein the plug shield defines a first triangular protrusion configured to secure the plug shield within the plug connector body and the receptacle shield defines a second triangular protrusion configured to secure the receptacle shield within the receptacle connector body. 20. The assembly according to claim 18, wherein the plug connector body defines a longitudinally extending lock arm integrally connected to the plug connector body, said lock arm including
a U-shaped resilient strap integrally connecting the lock arm to the plug connector body, an inwardly extending lock nib configured to engage an outwardly extending lock tab defined by the receptacle connector body, a depressible handle disposed rearward of the U-shaped resilient strap, wherein the lock nib is moveable outwardly away from the lock tab to enable disengagement of the lock nib with the lock tab, an inwardly extending fulcrum located between the lock nib and the depressible handle, a free end defining an outwardly extending stop, a transverse hold down beam integrally connected to the plug connector body between fixed ends and configured to engage the stop and increase a hold-down force on the lock nib to maintain engagement of the lock nib with the lock tab when a longitudinal force applied between the plug connector body and the receptacle connector body exceeds a first threshold. | A shielded cable assembly capable of transmitting signals at speeds of 3.5 Gigabits per second (Gb/s) or higher without modulation or encoding over a single pair of conductors. The cable has a characteristic impedance of 95 Ohms and can support transmission data according to either USB 3.0 or HDMI 1.4 performance specifications. The wire cable includes a pair of conductors, a shield surrounding the conductors, and a dielectric structure configured to maintain a first predetermined spacing between the conductors and a second predetermined spacing between said conductors and said shield. The shield includes an inner shield conductor enclosing the dielectric structure and an outer shield conductor enclosing the inner shield conductor.1. An assembly configured to transmit electrical signals, comprising:
a wire cable having
a first inner conductor and second inner conductor;
a shield surrounding the first inner conductor and the second inner conductor; and
a dielectric structure configured to maintain a first predetermined spacing between the first inner conductor and the second inner conductor and a second predetermined spacing between said the first inner conductor and the second inner conductor and said shield, wherein the shield comprises
an inner shield conductor at least partially enclosing the dielectric structure, thereby establishing a characteristic impedance of the wire cable, and
an outer shield conductor at least partially enclosing the inner shield conductor and in electrical communication with the inner shield conductor. 2. The assembly according to claim 1, wherein said assembly does not include a separate drain wire conductor. 3. The assembly according to claim 1, wherein the dielectric structure is configured to provide consistent radial spacing between the first and second inner conductor and the inner shield conductor. 4. The assembly according to claim 1, wherein the dielectric structure comprises a first dielectric insulator enclosing the first inner conductor and a second dielectric insulator enclosing the second inner conductor, wherein the first dielectric insulator and the second dielectric insulator are bonded together, thereby providing consistent lateral spacing between the first inner conductor and the second inner conductor. 5. The assembly according to claim 4, wherein the dielectric structure further comprises a third dielectric insulator enclosing the first dielectric insulator and the second dielectric insulator, thereby providing consistent radial spacing between the first and second inner conductor and the inner shield conductor. 6. The assembly according to claim 1, wherein the inner shield conductor is formed of an aluminized film wrapped about the dielectric structure such that a seam formed by the inner shield conductor is substantially parallel to a longitudinal axis of the wire cable and wherein a lateral length of the inner shield conductor covers at least 100 percent of a dielectric structure circumference. 7. The assembly according to claim 1, wherein the first inner conductor and the second inner conductor are not twisted one about the other. 8. The assembly according to claim 1, wherein the wire cable has the characteristic impedance of 95 Ohms. 9. The assembly according to claim 8, wherein a wire cable up to 7 meters in length is characterized as having a differential insertion loss of less than 1.5 decibels (dB) for a signal with signal frequency content less than 100 Megahertz (MHz), less than 5 dB for a signal with signal frequency content between 100 MHz and 1.25 Gigahertz (GHz), less than 7.5 dB for a signal with signal frequency content between 1.25 GHz and 2.5 GHz, and less than 25 dB for a signal with signal frequency content between 2.5 GHz and 7.5 GHz. 10. The assembly according to claim 9, wherein the wire cable is characterized as having an intra-pair skew of less than 50 picoseconds. 11. The assembly according to claim 1, wherein the assembly further comprises at least one electrical connector selected from the group consisting of:
a plug connector having
a first plug terminal including a first connection portion characterized by a generally rectangular cross section, and
a second plug terminal including a second connection portion characterized by a generally rectangular cross section, wherein the first and second plug terminals are configured to be attached to the first and second inner conductor respectively and wherein the first and second plug terminals form a mirrored pair having bilateral symmetry about a longitudinal axis; and
a receptacle connector configured to mate with said plug connector having
a first receptacle terminal including a first cantilever beam portion characterized by a generally rectangular cross section and defining a convex first contact point depending from the first cantilever beam portion, said first contact point configured to contact the first connection portion of the first plug terminal, and
a second receptacle terminal including a second cantilever beam portion characterized by a generally rectangular cross section and defining a convex second contact point depending from the second cantilever beam portion, said second contact point configured to contact the second connection portion of the second plug terminal, wherein the first and second receptacle terminals are configured to be attached to the first and second inner conductor respectively, wherein the first and second receptacle terminals form a mirrored terminal pair having bilateral symmetry about the longitudinal axis and wherein when a plug connector is connected to a corresponding receptacle connector, the major width of the first connection portion is substantially perpendicular to the major width of the first cantilever beam portion and the second connection portion is substantially perpendicular to the major width of the second cantilever beam portion. 12. The assembly according to claim 11, wherein the assembly further comprises an electrically conductive shield selected from the group consisting of:
a plug shield electrically isolated from the plug connector and longitudinally surrounding the plug connector; and a receptacle shield electrically isolated from the receptacle connector and longitudinally surrounding the receptacle connector, wherein the electrically conductive shield defines a pair of wire crimping wings that are mechanically connected to the outer shield conductor, thereby electrically connecting the electrically conductive shield to the inner shield conductor, thereby establishing the characteristic impedance of the assembly. 13. The assembly according to claim 12, wherein the receptacle shield defines an embossment proximate a location of a connection between the first inner conductor and the first receptacle terminal and a connection between the second inner conductor and the second receptacle terminal. 14. The assembly according to claim 13, wherein the assembly has the characteristic impedance of 95 Ohms. 15. The assembly according to claim 14, wherein an assembly having a wire cable up to 7 meters in length is characterized as having a differential insertion loss of less than 1.5 dB for a signal with signal frequency content less than 100 MHz, less than 5 dB for a signal with signal frequency content between 100 MHz and 1.25 GHz, less than 7.5 dB for a signal with signal frequency content between 1.25 GHz and 2.5 GHz, and less than 25 dB for a signal with signal frequency content between 2.5 GHz and 7.5 GHz. 16. The assembly according to claim 14, wherein the assembly is characterized as having an intra-pair skew of less than 50 picoseconds. 17. The assembly according to claim 12, wherein the electrically conductive shield defines a prong that is configured to penetrate the dielectric outer layer, thereby inhibiting rotation of the electrically conductive shield about the longitudinal axis. 18. The assembly according to claim 12, wherein the assembly further comprises a connector body selected from the group consisting of
a plug connector body defining a first cavity, wherein said plug connector and said plug shield are at least partially disposed within said first cavity, and a receptacle connector body defining a second cavity and configured to mate with the plug connector body, wherein said receptacle connector and said receptacle shield are at least partially disposed within said second cavity. 19. The assembly according to claim 18, wherein the plug shield defines a first triangular protrusion configured to secure the plug shield within the plug connector body and the receptacle shield defines a second triangular protrusion configured to secure the receptacle shield within the receptacle connector body. 20. The assembly according to claim 18, wherein the plug connector body defines a longitudinally extending lock arm integrally connected to the plug connector body, said lock arm including
a U-shaped resilient strap integrally connecting the lock arm to the plug connector body, an inwardly extending lock nib configured to engage an outwardly extending lock tab defined by the receptacle connector body, a depressible handle disposed rearward of the U-shaped resilient strap, wherein the lock nib is moveable outwardly away from the lock tab to enable disengagement of the lock nib with the lock tab, an inwardly extending fulcrum located between the lock nib and the depressible handle, a free end defining an outwardly extending stop, a transverse hold down beam integrally connected to the plug connector body between fixed ends and configured to engage the stop and increase a hold-down force on the lock nib to maintain engagement of the lock nib with the lock tab when a longitudinal force applied between the plug connector body and the receptacle connector body exceeds a first threshold. | 2,800 |
11,661 | 11,661 | 15,926,127 | 2,895 | Forming a semiconductor package includes coupling electrically conductive elements with a substrate, coupling a first die with one or more of the electrically conductive elements, and at least partially encapsulating the first die and electrically conductive elements in a first mold layer. A first redistribution layer (RDL) is placed over the first mold layer and electrically coupled with the first die. A second die is coupled with the first RDL, and the second die and first RDL are at least partially encapsulated in a second mold layer. A second RDL is formed over the second mold layer and is electrically coupled with the second die. A third mold layer at least partially encapsulates the second RDL. A portion of the substrate is removed to expose (and a solder mask is applied to) surfaces of the electrically conductive elements and of the first mold layer to form a stacked embedded package. | 1. A semiconductor package, comprising:
a first semiconductor die at least partially encapsulated in a first mold layer; a first redistribution layer (RDL) coupled with the first mold layer, the first redistribution layer electrically coupled with the first semiconductor die; a second semiconductor die coupled with the first redistribution layer; the second semiconductor die and the first redistribution layer at least partially encapsulated in a second mold layer; and a second redistribution layer (RDL) coupled with the second mold layer, the second redistribution layer electrically coupled with the second semiconductor die and the second redistribution layer at least partially encapsulated in a third mold layer. 2. The package of claim 1, wherein the first redistribution layer is coupled with one or more of a plurality of electrically conductive elements. 3. The package of claim 1, wherein the first mold layer, the second mold layer, and the third mold layer are formed using compression molding. 4. The package of claim 1, further comprising a third semiconductor die coupled at least partially encapsulated in the first mold layer. 5. The package of claim 1, wherein the package does not comprise a sequential build-up (SBU) laminate substrate. 6. The package of claim 1, wherein the package comprises no bondwires and no electrically conductive clips. 7. The package of claim 1, wherein the first redistribution layer is electrically coupled with the first semiconductor die through one or more electrically conductive pillars, the second redistribution layer is electrically coupled with the second semiconductor die through one or more electrically conductive pillars, and the second redistribution layer is electrically coupled with the first redistribution layer through one or more electrically conductive pillars. 8. The package of claim 1, further comprising a heat dissipation device coupled with the second redistribution layer, the heat dissipation device at least partially encapsulated in the third mold layer, wherein a portion of the heat dissipation device is exposed on an outer surface of the package through an opening in the third mold layer. 9. A semiconductor package, comprising:
a first semiconductor die at least partially encapsulated in a first mold layer; one or more first vias through the first mold layer at least partially filled with an electrically conductive material to form one or more first pillars; a first redistribution layer (RDL) coupled with the first mold layer, the first redistribution layer electrically coupled with the first semiconductor die through the one or more first pillars; a second semiconductor die coupled with the first redistribution layer; the second semiconductor die and the first redistribution layer at least partially encapsulated in a second mold layer; one or more second vias through the second mold layer at least partially filled with an electrically conductive material to form one or more second pillars; and a second redistribution layer (RDL) coupled with the second mold layer, the second redistribution layer electrically coupled with the second semiconductor die through the one or more second pillars. 10. The method of claim 9, further comprising electrically coupling the first redistribution layer with one or more of a plurality of electrically conductive elements. 11. The package of claim 9, wherein the first mold layer, the second mold layer, and the third mold layer are formed using compression molding. 12. The package of claim 9, further comprising a third semiconductor die coupled at least partially encapsulated in the first mold layer. 13. The package of claim 9, wherein the package does not comprise a sequential build-up (SBU) laminate substrate. 14. The package of claim 9, wherein the package comprises no bondwires and no electrically conductive clips. 15. The package of claim 9, wherein the second redistribution layer is electrically coupled with the first redistribution layer through the one or more second pillars. 16. The package of claim 9, further comprising a heat dissipation device coupled with the second redistribution layer, the heat dissipation device at least partially encapsulated in the third mold layer, wherein a portion of the heat dissipation device is exposed on an outer surface of the package through an opening in the third mold layer. 17. A semiconductor package, comprising:
a first semiconductor die coupled with a third semiconductor die, the first semiconductor die and the third semiconductor die at least partially encapsulated in a first mold layer; a first redistribution layer (RDL) coupled with the first mold layer, the first redistribution layer electrically coupled with the first semiconductor die; a second semiconductor die coupled with the first redistribution layer; the second semiconductor die and the first redistribution layer at least partially encapsulated in a second mold layer; and a second redistribution layer (RDL) coupled with the second mold layer, the second redistribution layer electrically coupled with the second semiconductor die and the second redistribution layer at least partially encapsulated in a third mold layer. 18. The package of claim 17, wherein the first redistribution layer is electrically coupled with one or more of a plurality of electrically conductive elements. 19. The package of claim 17, wherein the stacked embedded package comprises no sequential build-up (SBU) laminate substrates, no bondwires, and no electrically conductive clips. 20. The method of claim 17, further comprising a heat dissipation device coupled with the second redistribution layer. | Forming a semiconductor package includes coupling electrically conductive elements with a substrate, coupling a first die with one or more of the electrically conductive elements, and at least partially encapsulating the first die and electrically conductive elements in a first mold layer. A first redistribution layer (RDL) is placed over the first mold layer and electrically coupled with the first die. A second die is coupled with the first RDL, and the second die and first RDL are at least partially encapsulated in a second mold layer. A second RDL is formed over the second mold layer and is electrically coupled with the second die. A third mold layer at least partially encapsulates the second RDL. A portion of the substrate is removed to expose (and a solder mask is applied to) surfaces of the electrically conductive elements and of the first mold layer to form a stacked embedded package.1. A semiconductor package, comprising:
a first semiconductor die at least partially encapsulated in a first mold layer; a first redistribution layer (RDL) coupled with the first mold layer, the first redistribution layer electrically coupled with the first semiconductor die; a second semiconductor die coupled with the first redistribution layer; the second semiconductor die and the first redistribution layer at least partially encapsulated in a second mold layer; and a second redistribution layer (RDL) coupled with the second mold layer, the second redistribution layer electrically coupled with the second semiconductor die and the second redistribution layer at least partially encapsulated in a third mold layer. 2. The package of claim 1, wherein the first redistribution layer is coupled with one or more of a plurality of electrically conductive elements. 3. The package of claim 1, wherein the first mold layer, the second mold layer, and the third mold layer are formed using compression molding. 4. The package of claim 1, further comprising a third semiconductor die coupled at least partially encapsulated in the first mold layer. 5. The package of claim 1, wherein the package does not comprise a sequential build-up (SBU) laminate substrate. 6. The package of claim 1, wherein the package comprises no bondwires and no electrically conductive clips. 7. The package of claim 1, wherein the first redistribution layer is electrically coupled with the first semiconductor die through one or more electrically conductive pillars, the second redistribution layer is electrically coupled with the second semiconductor die through one or more electrically conductive pillars, and the second redistribution layer is electrically coupled with the first redistribution layer through one or more electrically conductive pillars. 8. The package of claim 1, further comprising a heat dissipation device coupled with the second redistribution layer, the heat dissipation device at least partially encapsulated in the third mold layer, wherein a portion of the heat dissipation device is exposed on an outer surface of the package through an opening in the third mold layer. 9. A semiconductor package, comprising:
a first semiconductor die at least partially encapsulated in a first mold layer; one or more first vias through the first mold layer at least partially filled with an electrically conductive material to form one or more first pillars; a first redistribution layer (RDL) coupled with the first mold layer, the first redistribution layer electrically coupled with the first semiconductor die through the one or more first pillars; a second semiconductor die coupled with the first redistribution layer; the second semiconductor die and the first redistribution layer at least partially encapsulated in a second mold layer; one or more second vias through the second mold layer at least partially filled with an electrically conductive material to form one or more second pillars; and a second redistribution layer (RDL) coupled with the second mold layer, the second redistribution layer electrically coupled with the second semiconductor die through the one or more second pillars. 10. The method of claim 9, further comprising electrically coupling the first redistribution layer with one or more of a plurality of electrically conductive elements. 11. The package of claim 9, wherein the first mold layer, the second mold layer, and the third mold layer are formed using compression molding. 12. The package of claim 9, further comprising a third semiconductor die coupled at least partially encapsulated in the first mold layer. 13. The package of claim 9, wherein the package does not comprise a sequential build-up (SBU) laminate substrate. 14. The package of claim 9, wherein the package comprises no bondwires and no electrically conductive clips. 15. The package of claim 9, wherein the second redistribution layer is electrically coupled with the first redistribution layer through the one or more second pillars. 16. The package of claim 9, further comprising a heat dissipation device coupled with the second redistribution layer, the heat dissipation device at least partially encapsulated in the third mold layer, wherein a portion of the heat dissipation device is exposed on an outer surface of the package through an opening in the third mold layer. 17. A semiconductor package, comprising:
a first semiconductor die coupled with a third semiconductor die, the first semiconductor die and the third semiconductor die at least partially encapsulated in a first mold layer; a first redistribution layer (RDL) coupled with the first mold layer, the first redistribution layer electrically coupled with the first semiconductor die; a second semiconductor die coupled with the first redistribution layer; the second semiconductor die and the first redistribution layer at least partially encapsulated in a second mold layer; and a second redistribution layer (RDL) coupled with the second mold layer, the second redistribution layer electrically coupled with the second semiconductor die and the second redistribution layer at least partially encapsulated in a third mold layer. 18. The package of claim 17, wherein the first redistribution layer is electrically coupled with one or more of a plurality of electrically conductive elements. 19. The package of claim 17, wherein the stacked embedded package comprises no sequential build-up (SBU) laminate substrates, no bondwires, and no electrically conductive clips. 20. The method of claim 17, further comprising a heat dissipation device coupled with the second redistribution layer. | 2,800 |
11,662 | 11,662 | 15,484,735 | 2,824 | A dual-channel Dual In-Line Memory Module (DIMM) includes a first memory element configured to perform memory transactions for first memory locations associated with the first memory element via a first memory channel of the dual-channel DIMM, and a second memory element configured to perform memory transactions for second memory locations associated with the second memory element via a second memory channel of the dual-channel DIMM, wherein the first memory channel is different than the second memory channel, and wherein the first memory element is a different type of memory element than the second memory element. | 1. A dual-channel Dual In-Line Memory Module (DIMM), comprising:
a first memory element configured to perform memory transactions for first memory locations associated with the first memory element via a first memory channel of the dual-channel DIMM; and a second memory element configured to perform memory transactions for second memory locations associated with the second memory element via a second memory channel of the dual-channel DIMM, wherein the first memory channel is different than the second memory channel, and wherein the first memory element is a different type of memory element than the second memory element. 2. The dual-channel DIMM of claim 1, wherein the first memory element comprises a non-volatile DIMM (NVDIMM) type of memory element. 3. The dual-channel DIMM of claim 2, wherein the first memory element further comprises a JEDEC Standard NVDIMM-N type NVDIMM. 4. The dual-channel DIMM of claim 2, wherein the first memory element further comprises a JEDEC Standard NVDIMM-P type NVDIMM. 5. The dual-channel DIMM of claim 2, wherein the first memory element further comprises a JEDEC Standard NVDIMM-F type NVDIMM. 6. The dual-channel DIMM of claim 2, wherein the second memory element comprises a basic DIMM type of memory element. 7. The dual-channel DIMM of claim 6, wherein the basic DIMM type comprises one of an unbuffered DIMM (UDIMM), a registered DIMM (RDIMM), a load reduced DIMM (LRDIMM), and a storage class memory (SCM). 8. The dual-channel DIMM of claim 1, wherein the first memory element comprises a basic DIMM type of memory element, and wherein the second memory element comprises a non-volatile random access memory (NVRAM) type of memory element. 9. The dual-channel DIMM of claim 1, wherein the first memory element comprises a basic DIMM type of memory element that utilizes a first type of Dynamic Random Access Memory (DRAM) device, and wherein the second memory element comprises the basic DIMM type of memory element that utilizes a second type of DRAM device. 10. The dual-channel DIMM of claim 1, wherein the first memory element comprises a basic DIMM type of memory element that utilizes an Error Correcting Code (ECC), and wherein the second memory element comprises the basic DIMM type of memory element that does not utilize the ECC. 11. A method of providing a dual-channel Dual In-Line Memory Module (DIMM), the method comprising:
selecting a first type of memory type for a first memory element of the dual-channel DIMM; configuring the dual-channel DIMM to couple the first memory element to a first memory channel of the dual-channel DIMM; performing memory transactions for first memory locations associated with the first memory element via the first memory channel; selecting a second type of memory type for a second memory element of the dual-channel DIMM, wherein the first memory element is a different type of memory element than the second memory element; configuring the dual-channel DIMM to couple the second memory element to a second memory channel of the dual-channel DIMM, wherein the first memory channel is different than the second memory channel; and performing memory transactions for second memory locations associated with the second memory element via the second memory channel. 12. The method of claim 11, wherein the first memory element comprises a non-volatile DIMM (NVDIMM) type of memory element, and wherein the second memory element comprises a basic DIMM type of memory element. 13. The method of claim 11, wherein the first memory element comprises a basic DIMM type of memory element, and wherein the second memory element comprises a non-volatile random access memory (NVRAM) type of memory element. 14. The method of claim 11, wherein the first memory element comprises a basic DIMM type of memory element that utilizes a first type of Dynamic Random Access Memory (DRAM) device, and wherein the second memory element comprises the basic DIMM type of memory element that utilizes a second type of DRAM device. 15. The method of claim 11, wherein the first memory element comprises a basic DIMM type of memory element that utilizes an Error Correcting Code (ECC), and wherein the second memory element comprises the basic DIMM type of memory element that does not utilize the ECC. 16. An information handling system, comprising:
a dual-channel memory controller; and a dual-channel Dual In-Line Memory Module (DIMM), including:
a first memory element configured to perform memory transactions for first memory locations associated with the first memory element via a first memory channel of the dual-channel memory controller; and
a second memory element configured to perform memory transactions for second memory locations associated with the second memory element via a second memory channel of the dual-channel memory controller, wherein the first memory channel is different than the second memory channel, and wherein the first memory element is a different type of memory element than the second memory element. 17. The information handling system of claim 16, wherein the first memory element comprises a non-volatile DIMM (NVDIMM) type of memory element, and wherein the second memory element comprises a basic DIMM type of memory element. 18. The information handling system of claim 16, wherein the first memory element comprises a basic DIMM type of memory element, and wherein the second memory element comprises a non-volatile random access memory (NVRAM) type of memory element. 19. The information handling system of claim 16, wherein the first memory element comprises a basic DIMM type of memory element that utilizes a first type of Dynamic Random Access Memory (DRAM) device, and wherein the second memory element comprises the basic DIMM type of memory element that utilizes a second type of DRAM device. 20. The information handling system of claim 16, wherein the first memory element comprises a basic DIMM type of memory element that utilizes an Error Correcting Code (ECC), and wherein the second memory element comprises the basic DIMM type of memory element that does not utilize the ECC. | A dual-channel Dual In-Line Memory Module (DIMM) includes a first memory element configured to perform memory transactions for first memory locations associated with the first memory element via a first memory channel of the dual-channel DIMM, and a second memory element configured to perform memory transactions for second memory locations associated with the second memory element via a second memory channel of the dual-channel DIMM, wherein the first memory channel is different than the second memory channel, and wherein the first memory element is a different type of memory element than the second memory element.1. A dual-channel Dual In-Line Memory Module (DIMM), comprising:
a first memory element configured to perform memory transactions for first memory locations associated with the first memory element via a first memory channel of the dual-channel DIMM; and a second memory element configured to perform memory transactions for second memory locations associated with the second memory element via a second memory channel of the dual-channel DIMM, wherein the first memory channel is different than the second memory channel, and wherein the first memory element is a different type of memory element than the second memory element. 2. The dual-channel DIMM of claim 1, wherein the first memory element comprises a non-volatile DIMM (NVDIMM) type of memory element. 3. The dual-channel DIMM of claim 2, wherein the first memory element further comprises a JEDEC Standard NVDIMM-N type NVDIMM. 4. The dual-channel DIMM of claim 2, wherein the first memory element further comprises a JEDEC Standard NVDIMM-P type NVDIMM. 5. The dual-channel DIMM of claim 2, wherein the first memory element further comprises a JEDEC Standard NVDIMM-F type NVDIMM. 6. The dual-channel DIMM of claim 2, wherein the second memory element comprises a basic DIMM type of memory element. 7. The dual-channel DIMM of claim 6, wherein the basic DIMM type comprises one of an unbuffered DIMM (UDIMM), a registered DIMM (RDIMM), a load reduced DIMM (LRDIMM), and a storage class memory (SCM). 8. The dual-channel DIMM of claim 1, wherein the first memory element comprises a basic DIMM type of memory element, and wherein the second memory element comprises a non-volatile random access memory (NVRAM) type of memory element. 9. The dual-channel DIMM of claim 1, wherein the first memory element comprises a basic DIMM type of memory element that utilizes a first type of Dynamic Random Access Memory (DRAM) device, and wherein the second memory element comprises the basic DIMM type of memory element that utilizes a second type of DRAM device. 10. The dual-channel DIMM of claim 1, wherein the first memory element comprises a basic DIMM type of memory element that utilizes an Error Correcting Code (ECC), and wherein the second memory element comprises the basic DIMM type of memory element that does not utilize the ECC. 11. A method of providing a dual-channel Dual In-Line Memory Module (DIMM), the method comprising:
selecting a first type of memory type for a first memory element of the dual-channel DIMM; configuring the dual-channel DIMM to couple the first memory element to a first memory channel of the dual-channel DIMM; performing memory transactions for first memory locations associated with the first memory element via the first memory channel; selecting a second type of memory type for a second memory element of the dual-channel DIMM, wherein the first memory element is a different type of memory element than the second memory element; configuring the dual-channel DIMM to couple the second memory element to a second memory channel of the dual-channel DIMM, wherein the first memory channel is different than the second memory channel; and performing memory transactions for second memory locations associated with the second memory element via the second memory channel. 12. The method of claim 11, wherein the first memory element comprises a non-volatile DIMM (NVDIMM) type of memory element, and wherein the second memory element comprises a basic DIMM type of memory element. 13. The method of claim 11, wherein the first memory element comprises a basic DIMM type of memory element, and wherein the second memory element comprises a non-volatile random access memory (NVRAM) type of memory element. 14. The method of claim 11, wherein the first memory element comprises a basic DIMM type of memory element that utilizes a first type of Dynamic Random Access Memory (DRAM) device, and wherein the second memory element comprises the basic DIMM type of memory element that utilizes a second type of DRAM device. 15. The method of claim 11, wherein the first memory element comprises a basic DIMM type of memory element that utilizes an Error Correcting Code (ECC), and wherein the second memory element comprises the basic DIMM type of memory element that does not utilize the ECC. 16. An information handling system, comprising:
a dual-channel memory controller; and a dual-channel Dual In-Line Memory Module (DIMM), including:
a first memory element configured to perform memory transactions for first memory locations associated with the first memory element via a first memory channel of the dual-channel memory controller; and
a second memory element configured to perform memory transactions for second memory locations associated with the second memory element via a second memory channel of the dual-channel memory controller, wherein the first memory channel is different than the second memory channel, and wherein the first memory element is a different type of memory element than the second memory element. 17. The information handling system of claim 16, wherein the first memory element comprises a non-volatile DIMM (NVDIMM) type of memory element, and wherein the second memory element comprises a basic DIMM type of memory element. 18. The information handling system of claim 16, wherein the first memory element comprises a basic DIMM type of memory element, and wherein the second memory element comprises a non-volatile random access memory (NVRAM) type of memory element. 19. The information handling system of claim 16, wherein the first memory element comprises a basic DIMM type of memory element that utilizes a first type of Dynamic Random Access Memory (DRAM) device, and wherein the second memory element comprises the basic DIMM type of memory element that utilizes a second type of DRAM device. 20. The information handling system of claim 16, wherein the first memory element comprises a basic DIMM type of memory element that utilizes an Error Correcting Code (ECC), and wherein the second memory element comprises the basic DIMM type of memory element that does not utilize the ECC. | 2,800 |
11,663 | 11,663 | 15,594,745 | 2,866 | A flexible transformer system includes conductive windings extending around a magnetic core of a transformer phase and impedance-varying windings extending around the magnetic core of the transformer phase. The conductive windings and the impedance-varying windings are configured to conduct electric current around the magnetic core of the transformer phase. The system includes an impedance switch coupled with the impedance-varying windings and with the conductive windings. The impedance switch is configured to change an impedance of the system by changing which impedance-varying winding of the impedance-varying windings is conductively coupled with the conductive windings and which impedance-varying winding of the impedance-varying windings is disconnected from the conductive windings. | 1. A flexible transformer system comprising:
conductive windings extending around a magnetic core of a transformer phase; impedance-varying windings extending around the magnetic core of the transformer phase, the conductive windings and the impedance-varying windings configured to conduct electric current around the magnetic core of the transformer phase; and an impedance switch coupled with the impedance-varying windings and with the conductive windings, the impedance switch configured to change an impedance of the system by changing which impedance-varying winding of the impedance-varying windings is conductively coupled with the conductive windings and which impedance-varying winding of the impedance-varying windings is disconnected from the conductive windings. 2. The system of claim 1, wherein the conductive windings and the impedance-varying windings are disposed in a common housing of the transformer phase. 3. The system of claim 1, further comprising:
voltage-varying windings extending around the magnetic core of the transformer phase, the voltage-varying windings also configured to conduct electric current around the magnetic core of the transformer phase; and a voltage switch coupled with the voltage-varying windings and with the conductive windings, the voltage switch configured to change a voltage ratio of the system by changing which voltage-varying winding of the voltage-varying windings is conductively coupled with the conductive windings and which voltage-varying winding of the voltage-varying windings is disconnected from the conductive windings. 4. The system of claim 3, wherein the voltage-varying windings are disposed at one or more of a high voltage bushing end of the transformer phase or at a low voltage bushing end of the transformer phase. 5. The system of claim 3, wherein the voltage switch is configured to selectively couple the voltage-varying winding with the conductive windings without changing the impedance of the system. 6. The system of claim 1, wherein the impedance-varying windings further comprise a number of even windings and a same number of odd windings. 7. The system of claim 6, wherein the even windings of the impedance-varying windings are disposed at a first end of the magnetic core and the odd windings of the impedance-varying windings are disposed at an opposite, second end of the magnetic core. 8. The system of claim 1, wherein the impedance switch is configured to selectively couple the impedance-varying winding with the conductive windings without changing a voltage ratio of the system. 9. The system of claim 1, wherein the system is a flexible three-phase large power transformer. 10. The system of claim 1, wherein the impedance-varying windings are disposed at one or more of a high voltage bushing end of the transformer phase or at a low voltage bushing end of the transformer phase. 11. A flexible transformer system comprising:
conductive windings extending around a magnetic core of a transformer phase; impedance-varying windings extending around the magnetic core of the transformer phase, the conductive windings and the impedance-varying windings configured to conduct electric current around the magnetic core of the transformer phase, wherein the impedance-varying windings are disposed at one or more of a high voltage bushing end of the transformer phase or at a low voltage bushing end of the transformer phase; and an impedance switch coupled with the impedance-varying windings and with the conductive windings, the impedance switch configured to change an impedance of the system by changing which impedance-varying winding of the impedance-varying windings is conductively coupled with the conductive windings and which impedance-varying winding of the impedance-varying windings is disconnected from the conductive windings. 12. The system of claim 11, further comprising:
voltage-varying windings extending around the magnetic core of the transformer phase, the voltage-varying windings also configured to conduct electric current around the magnetic core of the transformer phase; and a voltage switch coupled with the voltage-varying windings and with the conductive windings, the voltage switch configured to change a voltage ratio of the system by changing which voltage-varying winding of the voltage-varying windings is conductively coupled with the conductive windings and which voltage-varying winding of the voltage-varying windings is disconnected from the conductive windings. 13. The system of claim 12, wherein the voltage switch is configured to selectively couple the voltage-varying winding with the conductive windings without changing the impedance of the system. 14. The system of claim 11, wherein the impedance-varying windings further comprise a number of even windings and a same number of odd windings. 15. The system of claim 11, wherein the impedance switch is configured to selectively couple the impedance-varying winding with the conductive windings without changing a voltage ratio of the system. 16. A method comprising:
changing an impedance of a flexible transformer system that includes impedance-varying windings and conductive windings extending around a magnetic core of a transformer phase by actuating an impedance switch coupled with the impedance-varying windings and with the conductive windings in order to change which impedance-varying winding of the impedance-varying windings is conductively coupled with the conductive windings and which impedance-varying winding of the impedance-varying windings is disconnected from the conductive windings. 17. The method of claim 16, wherein coupling the impedance-varying windings around the magnetic core includes positioning the impedance-varying windings in a housing of the transformer phase that also includes the conductive windings. 18. The method of claim 16, further comprising:
changing a voltage ratio of the system by actuating a voltage switch coupled with voltage-varying windings and the conductive windings to change which voltage-varying winding of the voltage-varying windings is conductively coupled with the conductive windings and which voltage-varying winding of the voltage-varying windings is disconnected from the conductive windings. 19. The method of claim 18, wherein changing the voltage ratio of the system includes selectively coupling the voltage-varying winding with the conductive windings with the voltage switch without changing the impedance of the system. 20. The method of claim 16, wherein changing the impedance of the system includes selectively coupling the impedance-varying winding with the conductive windings with the impedance switch without changing a voltage ratio of the system. | A flexible transformer system includes conductive windings extending around a magnetic core of a transformer phase and impedance-varying windings extending around the magnetic core of the transformer phase. The conductive windings and the impedance-varying windings are configured to conduct electric current around the magnetic core of the transformer phase. The system includes an impedance switch coupled with the impedance-varying windings and with the conductive windings. The impedance switch is configured to change an impedance of the system by changing which impedance-varying winding of the impedance-varying windings is conductively coupled with the conductive windings and which impedance-varying winding of the impedance-varying windings is disconnected from the conductive windings.1. A flexible transformer system comprising:
conductive windings extending around a magnetic core of a transformer phase; impedance-varying windings extending around the magnetic core of the transformer phase, the conductive windings and the impedance-varying windings configured to conduct electric current around the magnetic core of the transformer phase; and an impedance switch coupled with the impedance-varying windings and with the conductive windings, the impedance switch configured to change an impedance of the system by changing which impedance-varying winding of the impedance-varying windings is conductively coupled with the conductive windings and which impedance-varying winding of the impedance-varying windings is disconnected from the conductive windings. 2. The system of claim 1, wherein the conductive windings and the impedance-varying windings are disposed in a common housing of the transformer phase. 3. The system of claim 1, further comprising:
voltage-varying windings extending around the magnetic core of the transformer phase, the voltage-varying windings also configured to conduct electric current around the magnetic core of the transformer phase; and a voltage switch coupled with the voltage-varying windings and with the conductive windings, the voltage switch configured to change a voltage ratio of the system by changing which voltage-varying winding of the voltage-varying windings is conductively coupled with the conductive windings and which voltage-varying winding of the voltage-varying windings is disconnected from the conductive windings. 4. The system of claim 3, wherein the voltage-varying windings are disposed at one or more of a high voltage bushing end of the transformer phase or at a low voltage bushing end of the transformer phase. 5. The system of claim 3, wherein the voltage switch is configured to selectively couple the voltage-varying winding with the conductive windings without changing the impedance of the system. 6. The system of claim 1, wherein the impedance-varying windings further comprise a number of even windings and a same number of odd windings. 7. The system of claim 6, wherein the even windings of the impedance-varying windings are disposed at a first end of the magnetic core and the odd windings of the impedance-varying windings are disposed at an opposite, second end of the magnetic core. 8. The system of claim 1, wherein the impedance switch is configured to selectively couple the impedance-varying winding with the conductive windings without changing a voltage ratio of the system. 9. The system of claim 1, wherein the system is a flexible three-phase large power transformer. 10. The system of claim 1, wherein the impedance-varying windings are disposed at one or more of a high voltage bushing end of the transformer phase or at a low voltage bushing end of the transformer phase. 11. A flexible transformer system comprising:
conductive windings extending around a magnetic core of a transformer phase; impedance-varying windings extending around the magnetic core of the transformer phase, the conductive windings and the impedance-varying windings configured to conduct electric current around the magnetic core of the transformer phase, wherein the impedance-varying windings are disposed at one or more of a high voltage bushing end of the transformer phase or at a low voltage bushing end of the transformer phase; and an impedance switch coupled with the impedance-varying windings and with the conductive windings, the impedance switch configured to change an impedance of the system by changing which impedance-varying winding of the impedance-varying windings is conductively coupled with the conductive windings and which impedance-varying winding of the impedance-varying windings is disconnected from the conductive windings. 12. The system of claim 11, further comprising:
voltage-varying windings extending around the magnetic core of the transformer phase, the voltage-varying windings also configured to conduct electric current around the magnetic core of the transformer phase; and a voltage switch coupled with the voltage-varying windings and with the conductive windings, the voltage switch configured to change a voltage ratio of the system by changing which voltage-varying winding of the voltage-varying windings is conductively coupled with the conductive windings and which voltage-varying winding of the voltage-varying windings is disconnected from the conductive windings. 13. The system of claim 12, wherein the voltage switch is configured to selectively couple the voltage-varying winding with the conductive windings without changing the impedance of the system. 14. The system of claim 11, wherein the impedance-varying windings further comprise a number of even windings and a same number of odd windings. 15. The system of claim 11, wherein the impedance switch is configured to selectively couple the impedance-varying winding with the conductive windings without changing a voltage ratio of the system. 16. A method comprising:
changing an impedance of a flexible transformer system that includes impedance-varying windings and conductive windings extending around a magnetic core of a transformer phase by actuating an impedance switch coupled with the impedance-varying windings and with the conductive windings in order to change which impedance-varying winding of the impedance-varying windings is conductively coupled with the conductive windings and which impedance-varying winding of the impedance-varying windings is disconnected from the conductive windings. 17. The method of claim 16, wherein coupling the impedance-varying windings around the magnetic core includes positioning the impedance-varying windings in a housing of the transformer phase that also includes the conductive windings. 18. The method of claim 16, further comprising:
changing a voltage ratio of the system by actuating a voltage switch coupled with voltage-varying windings and the conductive windings to change which voltage-varying winding of the voltage-varying windings is conductively coupled with the conductive windings and which voltage-varying winding of the voltage-varying windings is disconnected from the conductive windings. 19. The method of claim 18, wherein changing the voltage ratio of the system includes selectively coupling the voltage-varying winding with the conductive windings with the voltage switch without changing the impedance of the system. 20. The method of claim 16, wherein changing the impedance of the system includes selectively coupling the impedance-varying winding with the conductive windings with the impedance switch without changing a voltage ratio of the system. | 2,800 |
11,664 | 11,664 | 15,243,407 | 2,834 | An electric machine includes a stator with a core having an end face and a plurality of conductors forming windings that extend adjacent to the end face defining end turns having a toroidal outline. The end turns are formed to define at least one channel in the end turns that traverses the end turns for increasing a surface area for fluid contact and directing a flow of fluid along the toroidal surface. | 1. An electric machine comprising:
a stator including a core having an end face and a plurality of conductors forming windings that extend adjacent to the end face and defining end turns having a toroidal outline, the end turns formed to define at least one channel that traverses the conductors for increasing a surface area for fluid contact and directing a flow of fluid along the toroidal outline. 2. The electric machine of claim 1 wherein the end turns further include insulating elements and binding elements disposed in contact with at least some of the conductors such that the at least one channel traverses at least a portion of one or more of the conductors, the binding elements, and the insulating elements. 3. The electric machine of claim 1 wherein the toroidal outline is defined in part by an outer-circumferential surface that is a surface of the toroidal outline generally furthest from a central axis of the stator and generally perpendicular to the end face, and wherein the at least one channel is defined in the outer-circumferential surface. 4. The electric machine of claim 1 wherein the toroidal outline is defined in part by an inner-circumferential surface that is a surface of the toroidal outline generally closest to a central axis of the stator and generally perpendicular to the end face, and wherein the at least one channel is defined in the inner-circumferential surface. 5. The electric machine of claim 1 wherein the toroidal outline is defined in part by an annular surface that is a surface of the toroidal outline generally parallel to the end face, and wherein the at least one channel is defined in the annular surface. 6. The electric machine of claim 1 wherein the toroidal outline is defined by (i) an outer-circumferential surface and an inner-circumferential surface that are generally concentric to one another and perpendicular to the end face and (ii) an annular surface that is generally parallel to the end face, and wherein the at least one channel is defined such that the at least one channel traverses the outer-circumferential surface, the annular surface, and the inner-circumferential surface. 7. The electric machine of the claim 1 wherein the at least one channel extends about a circumference of the toroidal outline. 8. An electric machine comprising:
a stator including a core defining an end face, a plurality of conductors forming windings that extend adjacent to the end face and defining end turns, and insulating elements and binding elements disposed in contact with the conductors, wherein the end turns are formed to define at least one channel that traverses a surface that includes the conductors, the insulating elements, and the binding elements. 9. The electric machine of claim 8 wherein the surface is an outer-circumferential surface that is generally perpendicular to the end face and generally furthest from a central axis of the stator. 10. The electric machine of the claim 8 wherein the surface is an inner-circumferential surface that is generally perpendicular to the end face and generally closest to a central axis of the stator. 11. The electric machine of claim 8 wherein the surface is an annular surface that is generally parallel to the end face. 12. The electric machine of claim 8 wherein the surface includes an outer arcuate surface of the end turns, a portion of an annular surface of the end turns, and an inner arcuate surface of the end turns, and wherein the at least one channel is a serpentine channel that is configured to direct fluid from the outer arcuate surface across the portion of the annular surface to the inner arcuate surface. 13. The electric machine of claim 12 wherein the outer arcuate surface is a topmost surface of the end turns, and wherein the inner arcuate surface is located below the topmost surface such that gravity aids movement of fluid from the outer arcuate surface to the inner arcuate surface. 14. A vehicle comprising:
an electric machine comprising a stator including a core having an end face and a plurality of conductors forming windings that extend adjacent to the end face and defining end turns having a toroidal outline, the end turns formed to define at least one channel in the toroidal outline; and a cooling system configured to distribute a cooling medium in the at least one channel. 15. The vehicle of claim 14 wherein the end turns further include insulating elements and binding elements disposed in contact with at least some of the conductors such that the toroidal outline includes at least a portion of one or more of the conductors, the binding elements, and the insulating elements. 16. The vehicle of claim 14 wherein the toroidal outline is defined in part by an outer-circumferential surface that is generally perpendicular to the end face, and wherein the at least one channel is defined in the outer-circumferential surface. 17. The vehicle of claim 14 wherein the toroidal outline is defined in part by an inner-circumferential surface that is generally perpendicular to the end face, and wherein the at least one channel is defined in the inner-circumferential surface. 18. The vehicle of claim 14 wherein the toroidal outline is defined in part by an annular surface that is generally parallel to the end face, and wherein the at least one channel is defined in the annular surface. 19. The vehicle of claim 14 wherein the toroidal outline is defined by (i) an outer-circumferential surface and an inner-circumferential surface that are generally perpendicular to the end face and (ii) an annular surface that is generally parallel to the end face, and wherein the at least one channel is defined such that the at least one channel traverses the outer-circumferential surface, the annular surface, and the inner-circumferential surface. 20. The vehicle of claim 19 wherein the cooling system is further configured to distribute the cooling medium in the at least one channel that traverses the outer-circumferential surface such that the cooling medium flows from the outer-circumferential surface to the annular surface and on to the inner-circumferential surface. | An electric machine includes a stator with a core having an end face and a plurality of conductors forming windings that extend adjacent to the end face defining end turns having a toroidal outline. The end turns are formed to define at least one channel in the end turns that traverses the end turns for increasing a surface area for fluid contact and directing a flow of fluid along the toroidal surface.1. An electric machine comprising:
a stator including a core having an end face and a plurality of conductors forming windings that extend adjacent to the end face and defining end turns having a toroidal outline, the end turns formed to define at least one channel that traverses the conductors for increasing a surface area for fluid contact and directing a flow of fluid along the toroidal outline. 2. The electric machine of claim 1 wherein the end turns further include insulating elements and binding elements disposed in contact with at least some of the conductors such that the at least one channel traverses at least a portion of one or more of the conductors, the binding elements, and the insulating elements. 3. The electric machine of claim 1 wherein the toroidal outline is defined in part by an outer-circumferential surface that is a surface of the toroidal outline generally furthest from a central axis of the stator and generally perpendicular to the end face, and wherein the at least one channel is defined in the outer-circumferential surface. 4. The electric machine of claim 1 wherein the toroidal outline is defined in part by an inner-circumferential surface that is a surface of the toroidal outline generally closest to a central axis of the stator and generally perpendicular to the end face, and wherein the at least one channel is defined in the inner-circumferential surface. 5. The electric machine of claim 1 wherein the toroidal outline is defined in part by an annular surface that is a surface of the toroidal outline generally parallel to the end face, and wherein the at least one channel is defined in the annular surface. 6. The electric machine of claim 1 wherein the toroidal outline is defined by (i) an outer-circumferential surface and an inner-circumferential surface that are generally concentric to one another and perpendicular to the end face and (ii) an annular surface that is generally parallel to the end face, and wherein the at least one channel is defined such that the at least one channel traverses the outer-circumferential surface, the annular surface, and the inner-circumferential surface. 7. The electric machine of the claim 1 wherein the at least one channel extends about a circumference of the toroidal outline. 8. An electric machine comprising:
a stator including a core defining an end face, a plurality of conductors forming windings that extend adjacent to the end face and defining end turns, and insulating elements and binding elements disposed in contact with the conductors, wherein the end turns are formed to define at least one channel that traverses a surface that includes the conductors, the insulating elements, and the binding elements. 9. The electric machine of claim 8 wherein the surface is an outer-circumferential surface that is generally perpendicular to the end face and generally furthest from a central axis of the stator. 10. The electric machine of the claim 8 wherein the surface is an inner-circumferential surface that is generally perpendicular to the end face and generally closest to a central axis of the stator. 11. The electric machine of claim 8 wherein the surface is an annular surface that is generally parallel to the end face. 12. The electric machine of claim 8 wherein the surface includes an outer arcuate surface of the end turns, a portion of an annular surface of the end turns, and an inner arcuate surface of the end turns, and wherein the at least one channel is a serpentine channel that is configured to direct fluid from the outer arcuate surface across the portion of the annular surface to the inner arcuate surface. 13. The electric machine of claim 12 wherein the outer arcuate surface is a topmost surface of the end turns, and wherein the inner arcuate surface is located below the topmost surface such that gravity aids movement of fluid from the outer arcuate surface to the inner arcuate surface. 14. A vehicle comprising:
an electric machine comprising a stator including a core having an end face and a plurality of conductors forming windings that extend adjacent to the end face and defining end turns having a toroidal outline, the end turns formed to define at least one channel in the toroidal outline; and a cooling system configured to distribute a cooling medium in the at least one channel. 15. The vehicle of claim 14 wherein the end turns further include insulating elements and binding elements disposed in contact with at least some of the conductors such that the toroidal outline includes at least a portion of one or more of the conductors, the binding elements, and the insulating elements. 16. The vehicle of claim 14 wherein the toroidal outline is defined in part by an outer-circumferential surface that is generally perpendicular to the end face, and wherein the at least one channel is defined in the outer-circumferential surface. 17. The vehicle of claim 14 wherein the toroidal outline is defined in part by an inner-circumferential surface that is generally perpendicular to the end face, and wherein the at least one channel is defined in the inner-circumferential surface. 18. The vehicle of claim 14 wherein the toroidal outline is defined in part by an annular surface that is generally parallel to the end face, and wherein the at least one channel is defined in the annular surface. 19. The vehicle of claim 14 wherein the toroidal outline is defined by (i) an outer-circumferential surface and an inner-circumferential surface that are generally perpendicular to the end face and (ii) an annular surface that is generally parallel to the end face, and wherein the at least one channel is defined such that the at least one channel traverses the outer-circumferential surface, the annular surface, and the inner-circumferential surface. 20. The vehicle of claim 19 wherein the cooling system is further configured to distribute the cooling medium in the at least one channel that traverses the outer-circumferential surface such that the cooling medium flows from the outer-circumferential surface to the annular surface and on to the inner-circumferential surface. | 2,800 |
11,665 | 11,665 | 15,173,251 | 2,818 | An integrated circuit assembly includes an insulating layer having a having a first surface and a second surface. A first active layer contacts the first surface of the insulating layer. A metal bond pad is electrically connected to the first active layer and formed on the second surface of the insulating layer. A substrate having a first surface and a second surface, with a second active layer formed in the first surface, is provided such that the first active layer is coupled to the second surface of the substrate. | 1. An integrated circuit assembly comprising:
an insulating layer having a first surface and a second surface; a first active layer contacting the first surface of the insulating layer; a metal bond pad formed on the second surface of the insulating layer; wherein the metal bond pad is electrically coupled to the first active layer; a substrate having a first surface and a second surface, the first active layer being coupled to the second surface of the substrate; a second active layer formed on the first surface of the substrate; a first singulated wafer portion including the insulating layer and the first active layer; and a second singulated wafer portion bonded to the first singulated wafer portion, the second wafer singulated portion including the substrate and the second active layer. 2. The integrated circuit assembly of claim 1, further comprising: a printed circuit board, the printed circuit board being electrically coupled to the metal bond pad. 3. The integrated circuit assembly of claim 2, wherein the printed circuit board is electrically coupled with a solder bump to the first active layer. 4. The integrated circuit assembly of claim 2, wherein the printed circuit board is electrically coupled to the second active layer through a wire bond. 5. The assembly of claim 2, wherein the printed circuit board is electrically coupled with a solder bump to the second active layer. 6. The assembly of claim 2, wherein the printed circuit board is electrically coupled to the first layer through a wire bond. 7. The integrated circuit assembly of claim 1, wherein the substrate is less than 100 microns thick. 8. The integrated circuit assembly of claim 1, wherein the substrate is less than 30 microns thick. 9. The integrated circuit assembly of claim 1, wherein the integrated circuit assembly does not include a vertical electrical connection through the first singulated wafer portion and the second singulated wafer portion. 10. The integrated circuit assembly of claim 1, wherein the first active layer or the second active layer includes passive devices. 11. A singulated integrated circuit assembly comprising:
a silicon on insulator (SOI) wafer portion including a first active layer formed on top of an insulating layer, the SOI wafer portion further including a first plurality of metal bond pads on a back side of the insulating layer, each of the metal bond pads of the first plurality of metal bond pads being in communication with active devices of the first active layer; and a first wafer portion having a second active layer formed on top of a semiconductor substrate layer, the first wafer portion further including a second plurality of metal bond pads formed above the second active layer and being in communication with active devices of the second active layer, further wherein a back side of the first wafer portion is bonded to a top side of the SOI wafer portion. 12. The singulated integrated circuit assembly of claim 11, further comprising:
a plurality of solder bumps disposed on the first plurality of metal bond pads; and a printed circuit board having a third plurality of metal bond pads in communication with the plurality of solder bumps. 13. The singulated integrated circuit assembly of claim 11, further comprising:
a plurality of solder bumps disposed on the second plurality of metal bond pads; and a printed circuit board having a third plurality of metal bond pads in communication with the plurality of solder bumps. 14. The singulated integrated circuit assembly of claim 11, further comprising:
a first printed circuit board coupled with the first plurality of metal bond pads; and a plurality of bonding wires coupling the second plurality of metal bond pads to the first printed circuit board. 15. The singulated integrated circuit assembly of claim 11, further comprising:
a first printed circuit board coupled with the second plurality of metal bond pads; and a plurality of bonding wires coupling the first plurality of metal bond pads to the first printed circuit board. 16. A singulated integrated circuit assembly comprising:
a first wafer portion having a first active layer formed on top of a semiconductor substrate, the first wafer portion further including a first metal bond pad formed on a top side of the first wafer portion and coupled with a first active device of the first active layer; and a second wafer portion having a second active layer formed on a top side of an insulator layer and having a second metal bond pad formed on a back side of the insulator layer, the second bond pad being in electrical communication with a second active device of the second active layer, further wherein a top side of the second wafer portion is bonded to a back side of the first wafer portion. 17. The singulated integrated circuit assembly of claim 11, further comprising:
a solder bump disposed on the first metal bond pad; and a printed circuit board having a third metal bond pad in communication with the solder bump. 18. The singulated integrated circuit assembly of claim 11, further comprising:
a solder bump disposed on the second metal bond pad; and a printed circuit board having a third metal bond pad in communication with the solder bump. 19. The singulated integrated circuit assembly of claim 11, further comprising:
a first printed circuit board coupled with the first metal bond pad; and a bonding wire coupling the second metal bond pad to the first printed circuit board. 20. The singulated integrated circuit assembly of claim 11, further comprising:
a first printed circuit board coupled with the second metal bond pad; and a bonding wire coupling the first metal bond pad to the first printed circuit board. | An integrated circuit assembly includes an insulating layer having a having a first surface and a second surface. A first active layer contacts the first surface of the insulating layer. A metal bond pad is electrically connected to the first active layer and formed on the second surface of the insulating layer. A substrate having a first surface and a second surface, with a second active layer formed in the first surface, is provided such that the first active layer is coupled to the second surface of the substrate.1. An integrated circuit assembly comprising:
an insulating layer having a first surface and a second surface; a first active layer contacting the first surface of the insulating layer; a metal bond pad formed on the second surface of the insulating layer; wherein the metal bond pad is electrically coupled to the first active layer; a substrate having a first surface and a second surface, the first active layer being coupled to the second surface of the substrate; a second active layer formed on the first surface of the substrate; a first singulated wafer portion including the insulating layer and the first active layer; and a second singulated wafer portion bonded to the first singulated wafer portion, the second wafer singulated portion including the substrate and the second active layer. 2. The integrated circuit assembly of claim 1, further comprising: a printed circuit board, the printed circuit board being electrically coupled to the metal bond pad. 3. The integrated circuit assembly of claim 2, wherein the printed circuit board is electrically coupled with a solder bump to the first active layer. 4. The integrated circuit assembly of claim 2, wherein the printed circuit board is electrically coupled to the second active layer through a wire bond. 5. The assembly of claim 2, wherein the printed circuit board is electrically coupled with a solder bump to the second active layer. 6. The assembly of claim 2, wherein the printed circuit board is electrically coupled to the first layer through a wire bond. 7. The integrated circuit assembly of claim 1, wherein the substrate is less than 100 microns thick. 8. The integrated circuit assembly of claim 1, wherein the substrate is less than 30 microns thick. 9. The integrated circuit assembly of claim 1, wherein the integrated circuit assembly does not include a vertical electrical connection through the first singulated wafer portion and the second singulated wafer portion. 10. The integrated circuit assembly of claim 1, wherein the first active layer or the second active layer includes passive devices. 11. A singulated integrated circuit assembly comprising:
a silicon on insulator (SOI) wafer portion including a first active layer formed on top of an insulating layer, the SOI wafer portion further including a first plurality of metal bond pads on a back side of the insulating layer, each of the metal bond pads of the first plurality of metal bond pads being in communication with active devices of the first active layer; and a first wafer portion having a second active layer formed on top of a semiconductor substrate layer, the first wafer portion further including a second plurality of metal bond pads formed above the second active layer and being in communication with active devices of the second active layer, further wherein a back side of the first wafer portion is bonded to a top side of the SOI wafer portion. 12. The singulated integrated circuit assembly of claim 11, further comprising:
a plurality of solder bumps disposed on the first plurality of metal bond pads; and a printed circuit board having a third plurality of metal bond pads in communication with the plurality of solder bumps. 13. The singulated integrated circuit assembly of claim 11, further comprising:
a plurality of solder bumps disposed on the second plurality of metal bond pads; and a printed circuit board having a third plurality of metal bond pads in communication with the plurality of solder bumps. 14. The singulated integrated circuit assembly of claim 11, further comprising:
a first printed circuit board coupled with the first plurality of metal bond pads; and a plurality of bonding wires coupling the second plurality of metal bond pads to the first printed circuit board. 15. The singulated integrated circuit assembly of claim 11, further comprising:
a first printed circuit board coupled with the second plurality of metal bond pads; and a plurality of bonding wires coupling the first plurality of metal bond pads to the first printed circuit board. 16. A singulated integrated circuit assembly comprising:
a first wafer portion having a first active layer formed on top of a semiconductor substrate, the first wafer portion further including a first metal bond pad formed on a top side of the first wafer portion and coupled with a first active device of the first active layer; and a second wafer portion having a second active layer formed on a top side of an insulator layer and having a second metal bond pad formed on a back side of the insulator layer, the second bond pad being in electrical communication with a second active device of the second active layer, further wherein a top side of the second wafer portion is bonded to a back side of the first wafer portion. 17. The singulated integrated circuit assembly of claim 11, further comprising:
a solder bump disposed on the first metal bond pad; and a printed circuit board having a third metal bond pad in communication with the solder bump. 18. The singulated integrated circuit assembly of claim 11, further comprising:
a solder bump disposed on the second metal bond pad; and a printed circuit board having a third metal bond pad in communication with the solder bump. 19. The singulated integrated circuit assembly of claim 11, further comprising:
a first printed circuit board coupled with the first metal bond pad; and a bonding wire coupling the second metal bond pad to the first printed circuit board. 20. The singulated integrated circuit assembly of claim 11, further comprising:
a first printed circuit board coupled with the second metal bond pad; and a bonding wire coupling the first metal bond pad to the first printed circuit board. | 2,800 |
11,666 | 11,666 | 14,660,739 | 2,838 | A peak-buck peak-boost current mode control structure and scheme for a synchronous four-switch and non-synchronous two-switch buck-boost regulators sense input and output voltages to smoothly transition between buck mode, buck-boost mode, and boost mode for high power efficiency and low output ripples. With the inductor current sensing, the control scheme achieves the best performance in continuous conduction and discontinuous condition mode operations. | 1. A peak-buck peak-boost control circuit for a voltage regulator capable of being configured as a buck regulator, a buck-boost regulator or a boost regulator, the buck-boost regulator receiving an input voltage and providing an output voltage. 2. The peak-buck peak-boost control circuit of claim 1, comprising:
a mode selection circuit generating control signals representing (a) a first control state in which the input voltage is greater than the output voltage by at least a predetermined value; (b) a second control state in which the input voltage is greater than the output voltage less than or equal to the predetermined value; (c) a third control state in which the output voltage is greater than the input voltage by less than or equal to a second predetermined value; (d) a fourth control state in which the output voltage is greater than the input voltage by at least the predetermined value; and a switch control signal generation circuit for generating control signals for operating switches in the voltage regulator, such that the voltage regulator is configured as (a) a buck regulator in the first control state, (b) a buck-boost regulator in the second and third control states, and (c) a boost regulator in the fourth control state. 3. The peak-buck peak-boost control circuit of claim 2, wherein the mode selection circuit incorporates hysteresis for transitioning between the first and second control states, or for transitioning between the third and fourth control states. 4. The peak-buck peak-boost control circuit of claim 2, wherein the output voltage is provided as a scaled feedback signal. 5. The peak-buck peak-boost control circuit of claim 2, wherein the voltage regulator comprises an inductor and wherein the switch control signal generation circuit includes a signal generator that provides a ramping voltage signal and a current sense amplifier that determines a peak value in a current flowing in the inductor. 6. The peak-buck peak-boost control circuit of claim 5, wherein the ramping voltage signal comprises a linear segment. 7. The peak-buck peak-boost control circuit of claim 5, wherein the current flowing in the inductor is determined from a voltage across a sense resistor. 8. The peak-buck peak-boost control circuit of claim 5, wherein the switch control signal generation circuit comprises a first comparator that determines an occurrence of the peak value using the ramping voltage, the inductor current, and an error signal derived from the output voltage. 9. The peak-buck peak-boost control circuit of claim 8, wherein the first comparator controls switches in an output side of the voltage regulator. 10. The peak-buck peak-boost control circuit of claim 9 wherein, when in either the third control state or the fourth control state, in response to the occurrence of the peak value, the switch control signal generation circuit closes a switch connecting the inductor from an output terminal of the voltage regulator and opens a switch connecting the inductor to a ground reference. 11. The peak-buck peak boost control circuit of claim 10 wherein, in the third control state, at a predetermined time following the occurrence of the peak value, the switch control signal generation circuit opens a switch connecting the inductor from an input terminal of the voltage regulator and closes a switch connecting the inductor to a ground reference. 12. The peak-buck peak-boost control circuit of claim 8, wherein the error signal is an amplified difference between a reference voltage and the output voltage. 13. The peak-buck peak-boost control circuit of claim 8, further comprising a compensation circuit receiving the error signal for providing loop stability in the voltage regulator. 14. The peak-buck peak-boost control circuit of claim 5, wherein the switch control signal generation circuit comprises a second comparator that determines an occurrence of the peak current using the ramping voltage, the inductor current, an offset voltage and an error signal derived from the output voltage. 15. The peak-buck peak-boost control circuit of claim 14, wherein the offset voltage is derived from a difference in voltage at two time points of the ramping voltage. 16. The peak-buck peak-boost control circuit of claim 15, wherein the two time points are specific time points within a switching cycle of the peak-buck peak-boost control circuit. 17. The peak-buck peak-boost control circuit of claim 14, wherein the comparator controls switches in an input side of the voltage regulator. 18. The peak-buck peak-boost control circuit of claim 17 wherein, when in either the first control state or the second control state, in response to the occurrence of the peak value, the switch control signal generation circuit opens a switch connecting the inductor from an input terminal of the voltage regulator and closes a switch connecting the inductor to a ground reference. 19. The peak-buck peak boost control circuit of claim 18 wherein, in the second control state, at a predetermined time, the switch control signal generation circuit closes a switch connecting the inductor from an output terminal of the voltage regulator and opens a switch connecting the inductor to a ground reference. 20. In a voltage regulator capable of being configured as a buck regulator, a buck-boost regulator or a boost regulator, the buck-boost regulator receiving an input voltage and providing an output voltage, a method for controlling the voltage regulator comprising:
selecting a mode of operation based on determining (a) a first control state in which the input voltage is greater than the output voltage by at least a predetermined value; (b) a second control state in which the input voltage is greater than the output voltage less than or equal to the predetermined value; (c) a third control state in which the output voltage is greater than the input voltage by less than or equal to a second predetermined value; (d) a fourth control state in which the output voltage is greater than the input voltage by at least the predetermined value; and generating switch control signals for operating switches in the voltage regulator, such that the voltage regulator is configured as (a) a buck regulator in the first control state, (b) a buck-boost regulator in the second and third control states, and (c) a boost regulator in the fourth control state. 21. The method of claim 20, wherein selecting the mode of operation further comprises incorporating hysteresis for transitioning between the first and second control states, or for transitioning between the third and fourth control states. 22. The method of claim 20, wherein the output voltage is provided as a scaled feedback signal. 23. The method of claim 20, wherein the voltage regulator comprises an inductor and wherein generating the switch control signals includes using a ramping voltage signal to determine a peak value in a current flowing in the inductor. 24. The method of claim 23, wherein the ramping voltage signal comprises a linear segment. 25. The method of claim 23, wherein the current flowing in the inductor is determined from a voltage across a sense resistor. 26. The method of claim 23, wherein generating the switch control signals comprises determining an occurrence of the peak value using the ramping voltage, the inductor current, and an error signal derived from the output voltage. 27. The method of claim 26, wherein the occurrence of the peak value determines switching in switches in an output side of the voltage regulator. 28. The method of claim 27 further comprising, when in either the third control state or the fourth control state, in response to the occurrence of the peak value, closing a switch that connects the inductor from an output terminal of the voltage regulator and opening a switch that connects the inductor to a ground reference. 29. The method of claim 28 further comprising, in the third control state, at a predetermined time following the occurrence of the peak value, opening a switch that connects the inductor from an input terminal of the voltage regulator and closing a switch that connects the inductor to a ground reference. 30. The method of claim 26, wherein the error signal is an amplified difference between a reference voltage and the output voltage. 31. The method of claim 26, further comprising compensating for loop stability in the voltage regulator using the error signal. 32. The method of claim 23, wherein generating the switch control signals comprises determining an occurrence of the peak current using the ramping voltage, the inductor current, an offset voltage and an error signal derived from the output voltage. 33. The method of claim 32, wherein the offset voltage is derived from a difference in voltage at two time points of the ramping voltage. 34. The method of claim 33, wherein the two time points are specific time points within a switching cycle of the control method. 35. The method circuit of claim 33, wherein the occurrence of the peak current controls switching in switches in an input side of the voltage regulator. 36. The method of claim 35 further comprising, when in either the first control state or the second control state, in response to the occurrence of the peak value, opening a switch that connects the inductor from an input terminal of the voltage regulator and closing a switch that connects the inductor to a ground reference. 37. The peak-buck peak boost control circuit of claim 36 further comprising, in the second control state, at a predetermined time, the switch control signal generation circuit closing a switch that connects the inductor from an output terminal of the voltage regulator and opening a switch that connects the inductor to a ground reference. | A peak-buck peak-boost current mode control structure and scheme for a synchronous four-switch and non-synchronous two-switch buck-boost regulators sense input and output voltages to smoothly transition between buck mode, buck-boost mode, and boost mode for high power efficiency and low output ripples. With the inductor current sensing, the control scheme achieves the best performance in continuous conduction and discontinuous condition mode operations.1. A peak-buck peak-boost control circuit for a voltage regulator capable of being configured as a buck regulator, a buck-boost regulator or a boost regulator, the buck-boost regulator receiving an input voltage and providing an output voltage. 2. The peak-buck peak-boost control circuit of claim 1, comprising:
a mode selection circuit generating control signals representing (a) a first control state in which the input voltage is greater than the output voltage by at least a predetermined value; (b) a second control state in which the input voltage is greater than the output voltage less than or equal to the predetermined value; (c) a third control state in which the output voltage is greater than the input voltage by less than or equal to a second predetermined value; (d) a fourth control state in which the output voltage is greater than the input voltage by at least the predetermined value; and a switch control signal generation circuit for generating control signals for operating switches in the voltage regulator, such that the voltage regulator is configured as (a) a buck regulator in the first control state, (b) a buck-boost regulator in the second and third control states, and (c) a boost regulator in the fourth control state. 3. The peak-buck peak-boost control circuit of claim 2, wherein the mode selection circuit incorporates hysteresis for transitioning between the first and second control states, or for transitioning between the third and fourth control states. 4. The peak-buck peak-boost control circuit of claim 2, wherein the output voltage is provided as a scaled feedback signal. 5. The peak-buck peak-boost control circuit of claim 2, wherein the voltage regulator comprises an inductor and wherein the switch control signal generation circuit includes a signal generator that provides a ramping voltage signal and a current sense amplifier that determines a peak value in a current flowing in the inductor. 6. The peak-buck peak-boost control circuit of claim 5, wherein the ramping voltage signal comprises a linear segment. 7. The peak-buck peak-boost control circuit of claim 5, wherein the current flowing in the inductor is determined from a voltage across a sense resistor. 8. The peak-buck peak-boost control circuit of claim 5, wherein the switch control signal generation circuit comprises a first comparator that determines an occurrence of the peak value using the ramping voltage, the inductor current, and an error signal derived from the output voltage. 9. The peak-buck peak-boost control circuit of claim 8, wherein the first comparator controls switches in an output side of the voltage regulator. 10. The peak-buck peak-boost control circuit of claim 9 wherein, when in either the third control state or the fourth control state, in response to the occurrence of the peak value, the switch control signal generation circuit closes a switch connecting the inductor from an output terminal of the voltage regulator and opens a switch connecting the inductor to a ground reference. 11. The peak-buck peak boost control circuit of claim 10 wherein, in the third control state, at a predetermined time following the occurrence of the peak value, the switch control signal generation circuit opens a switch connecting the inductor from an input terminal of the voltage regulator and closes a switch connecting the inductor to a ground reference. 12. The peak-buck peak-boost control circuit of claim 8, wherein the error signal is an amplified difference between a reference voltage and the output voltage. 13. The peak-buck peak-boost control circuit of claim 8, further comprising a compensation circuit receiving the error signal for providing loop stability in the voltage regulator. 14. The peak-buck peak-boost control circuit of claim 5, wherein the switch control signal generation circuit comprises a second comparator that determines an occurrence of the peak current using the ramping voltage, the inductor current, an offset voltage and an error signal derived from the output voltage. 15. The peak-buck peak-boost control circuit of claim 14, wherein the offset voltage is derived from a difference in voltage at two time points of the ramping voltage. 16. The peak-buck peak-boost control circuit of claim 15, wherein the two time points are specific time points within a switching cycle of the peak-buck peak-boost control circuit. 17. The peak-buck peak-boost control circuit of claim 14, wherein the comparator controls switches in an input side of the voltage regulator. 18. The peak-buck peak-boost control circuit of claim 17 wherein, when in either the first control state or the second control state, in response to the occurrence of the peak value, the switch control signal generation circuit opens a switch connecting the inductor from an input terminal of the voltage regulator and closes a switch connecting the inductor to a ground reference. 19. The peak-buck peak boost control circuit of claim 18 wherein, in the second control state, at a predetermined time, the switch control signal generation circuit closes a switch connecting the inductor from an output terminal of the voltage regulator and opens a switch connecting the inductor to a ground reference. 20. In a voltage regulator capable of being configured as a buck regulator, a buck-boost regulator or a boost regulator, the buck-boost regulator receiving an input voltage and providing an output voltage, a method for controlling the voltage regulator comprising:
selecting a mode of operation based on determining (a) a first control state in which the input voltage is greater than the output voltage by at least a predetermined value; (b) a second control state in which the input voltage is greater than the output voltage less than or equal to the predetermined value; (c) a third control state in which the output voltage is greater than the input voltage by less than or equal to a second predetermined value; (d) a fourth control state in which the output voltage is greater than the input voltage by at least the predetermined value; and generating switch control signals for operating switches in the voltage regulator, such that the voltage regulator is configured as (a) a buck regulator in the first control state, (b) a buck-boost regulator in the second and third control states, and (c) a boost regulator in the fourth control state. 21. The method of claim 20, wherein selecting the mode of operation further comprises incorporating hysteresis for transitioning between the first and second control states, or for transitioning between the third and fourth control states. 22. The method of claim 20, wherein the output voltage is provided as a scaled feedback signal. 23. The method of claim 20, wherein the voltage regulator comprises an inductor and wherein generating the switch control signals includes using a ramping voltage signal to determine a peak value in a current flowing in the inductor. 24. The method of claim 23, wherein the ramping voltage signal comprises a linear segment. 25. The method of claim 23, wherein the current flowing in the inductor is determined from a voltage across a sense resistor. 26. The method of claim 23, wherein generating the switch control signals comprises determining an occurrence of the peak value using the ramping voltage, the inductor current, and an error signal derived from the output voltage. 27. The method of claim 26, wherein the occurrence of the peak value determines switching in switches in an output side of the voltage regulator. 28. The method of claim 27 further comprising, when in either the third control state or the fourth control state, in response to the occurrence of the peak value, closing a switch that connects the inductor from an output terminal of the voltage regulator and opening a switch that connects the inductor to a ground reference. 29. The method of claim 28 further comprising, in the third control state, at a predetermined time following the occurrence of the peak value, opening a switch that connects the inductor from an input terminal of the voltage regulator and closing a switch that connects the inductor to a ground reference. 30. The method of claim 26, wherein the error signal is an amplified difference between a reference voltage and the output voltage. 31. The method of claim 26, further comprising compensating for loop stability in the voltage regulator using the error signal. 32. The method of claim 23, wherein generating the switch control signals comprises determining an occurrence of the peak current using the ramping voltage, the inductor current, an offset voltage and an error signal derived from the output voltage. 33. The method of claim 32, wherein the offset voltage is derived from a difference in voltage at two time points of the ramping voltage. 34. The method of claim 33, wherein the two time points are specific time points within a switching cycle of the control method. 35. The method circuit of claim 33, wherein the occurrence of the peak current controls switching in switches in an input side of the voltage regulator. 36. The method of claim 35 further comprising, when in either the first control state or the second control state, in response to the occurrence of the peak value, opening a switch that connects the inductor from an input terminal of the voltage regulator and closing a switch that connects the inductor to a ground reference. 37. The peak-buck peak boost control circuit of claim 36 further comprising, in the second control state, at a predetermined time, the switch control signal generation circuit closing a switch that connects the inductor from an output terminal of the voltage regulator and opening a switch that connects the inductor to a ground reference. | 2,800 |
11,667 | 11,667 | 15,301,469 | 2,884 | Disclosed are a cartridge-type X-ray source apparatus and an X-ray emission apparatus using the same. The X-ray source includes: a cathode electrode provided with an electron emission source by using a nanostructure; an anode electrode having a target emitting X-rays by electron collision; and a housing forming an external appearance, and exposing a cathode electrode terminal connected to the cathode electrode and an anode electrode terminal connected to the anode electrode to an outside thereof, wherein the cathode electrode terminal and the anode electrode terminal differ from each other in at least one of exposure direction, height, size, and shape. | 1. An X-ray emission apparatus comprising:
a main body including a cartridge mounting part configured to allow an X-ray source to be replacebley mounted thereto and to generate X-rays from the X-ray source mounted on the cartridge mounting part to be irradiated onto an X-ray irradiation path, wherein the X-ray source includes:
a cathode electrode provided with an electron emission source using a nanostructure;
an anode electrode having a target emitting X-rays by electron collision; and
a housing forming an external appearance, and exposing a cathode electrode terminal connected to the cathode electrode and an anode electrode terminal connected to the anode electrode to an outside thereof, wherein the cathode electrode terminal and the anode electrode terminal differ from each other in at least one of exposure direction, height, size, and shape, and
the cartridge mounting part includes first and second connection terminals brought into physical contact with the anode electrode terminal and the cathode electrode terminal. 2. The X-ray emission apparatus of claim 1, wherein
the anode electrode terminal and the cathode electrode terminal are exposed outside either toward a same direction with a height thereof being different from each other, or toward different directions. 3. The X-ray emission apparatus of claim 1, wherein
each of an outer surface of the housing and the cartridge mounting part is provided with at least one guide member corresponding to each other. 4. The X-ray emission apparatus of claim 1, wherein
the main body is provided with the cartridge mounting part in plural, each of which the X-ray source is mounted to. 5. The X-ray emission apparatus of claim 4, wherein
the main body includes a rotary loader moving one of the plurality of X-ray sources toward the X-ray irradiation path. 6. The X-ray emission apparatus of claim 4, wherein
the main body includes a multi-collimator irradiating X-rays generated from the plurality of X-ray sources onto the X-ray irradiation path. 7. An X-ray source comprising:
a cathode electrode provided with an electron emission source using a nanostructure; an anode electrode having a target emitting X-rays by electron collision; and a housing forming an external appearance, and exposing a cathode electrode terminal connected to the cathode electrode and an anode electrode terminal connected to the anode electrode to an outside thereof, wherein the cathode electrode terminal and the anode electrode terminal differ from each other in at least one of exposure direction, height, size, and shape, wherein the X-ray source is replaceably mounted to an X-ray emission apparatus in a cartridge-type manner. 8. The X-ray source of claim 7, wherein
the anode electrode terminal and the cathode electrode terminal are exposed outside either in a same direction with the height thereof being different from each other, or toward different directions. 9. The X-ray source of claim 7, wherein each of an outer surface of the housing and the X-ray emission apparatus is provided with at least one guide member corresponding to each other. | Disclosed are a cartridge-type X-ray source apparatus and an X-ray emission apparatus using the same. The X-ray source includes: a cathode electrode provided with an electron emission source by using a nanostructure; an anode electrode having a target emitting X-rays by electron collision; and a housing forming an external appearance, and exposing a cathode electrode terminal connected to the cathode electrode and an anode electrode terminal connected to the anode electrode to an outside thereof, wherein the cathode electrode terminal and the anode electrode terminal differ from each other in at least one of exposure direction, height, size, and shape.1. An X-ray emission apparatus comprising:
a main body including a cartridge mounting part configured to allow an X-ray source to be replacebley mounted thereto and to generate X-rays from the X-ray source mounted on the cartridge mounting part to be irradiated onto an X-ray irradiation path, wherein the X-ray source includes:
a cathode electrode provided with an electron emission source using a nanostructure;
an anode electrode having a target emitting X-rays by electron collision; and
a housing forming an external appearance, and exposing a cathode electrode terminal connected to the cathode electrode and an anode electrode terminal connected to the anode electrode to an outside thereof, wherein the cathode electrode terminal and the anode electrode terminal differ from each other in at least one of exposure direction, height, size, and shape, and
the cartridge mounting part includes first and second connection terminals brought into physical contact with the anode electrode terminal and the cathode electrode terminal. 2. The X-ray emission apparatus of claim 1, wherein
the anode electrode terminal and the cathode electrode terminal are exposed outside either toward a same direction with a height thereof being different from each other, or toward different directions. 3. The X-ray emission apparatus of claim 1, wherein
each of an outer surface of the housing and the cartridge mounting part is provided with at least one guide member corresponding to each other. 4. The X-ray emission apparatus of claim 1, wherein
the main body is provided with the cartridge mounting part in plural, each of which the X-ray source is mounted to. 5. The X-ray emission apparatus of claim 4, wherein
the main body includes a rotary loader moving one of the plurality of X-ray sources toward the X-ray irradiation path. 6. The X-ray emission apparatus of claim 4, wherein
the main body includes a multi-collimator irradiating X-rays generated from the plurality of X-ray sources onto the X-ray irradiation path. 7. An X-ray source comprising:
a cathode electrode provided with an electron emission source using a nanostructure; an anode electrode having a target emitting X-rays by electron collision; and a housing forming an external appearance, and exposing a cathode electrode terminal connected to the cathode electrode and an anode electrode terminal connected to the anode electrode to an outside thereof, wherein the cathode electrode terminal and the anode electrode terminal differ from each other in at least one of exposure direction, height, size, and shape, wherein the X-ray source is replaceably mounted to an X-ray emission apparatus in a cartridge-type manner. 8. The X-ray source of claim 7, wherein
the anode electrode terminal and the cathode electrode terminal are exposed outside either in a same direction with the height thereof being different from each other, or toward different directions. 9. The X-ray source of claim 7, wherein each of an outer surface of the housing and the X-ray emission apparatus is provided with at least one guide member corresponding to each other. | 2,800 |
11,668 | 11,668 | 15,813,242 | 2,875 | A motor vehicle according to an exemplary aspect of the present disclosure includes, among other things, a conspicuity lamp and a controller configured to illuminate the conspicuity lamp in proportion to a load of the motor vehicle. A method is also disclosed. | 1. A motor vehicle, comprising:
a conspicuity lamp; and a controller configured to illuminate the conspicuity lamp in proportion to a load of the motor vehicle. 2. The motor vehicle as recited in claim 1, wherein the controller is configured to illuminate a surface area of the conspicuity lamp in proportion to the load of the motor vehicle. 3. The motor vehicle as recited in claim 2, wherein the surface area of the conspicuity lamp is divided into sections, and wherein the controller is configured to illuminate a number of sections of the conspicuity lamp in proportion to the load of the motor vehicle. 4. The motor vehicle as recited in claim 3, wherein, when the load of the motor vehicle is below a predetermined threshold, the controller illuminates none of the sections of the conspicuity lamp. 5. The motor vehicle as recited in claim 3, wherein, when the load of the motor vehicle meets or exceeds a maximum rated load for the motor vehicle, the controller illuminates all of the sections of the conspicuity lamp. 6. The motor vehicle as recited in claim 5, wherein, when the load of the motor vehicle meets or exceeds the maximum rated load for the motor vehicle, the controller prevents normal vehicle operation. 7. The motor vehicle as recited in claim 1, wherein the controller illuminates the conspicuity lamp in proportion to a load of the motor vehicle and as the load of the motor vehicle relates to a maximum rated load of the motor vehicle. 8. The motor vehicle as recited in claim 1, further comprising:
a sensor configured to generate a signal indicative of the load of the motor vehicle. 9. The motor vehicle as recited in claim 8, wherein the sensor includes a strain gauge mounted adjacent a rear axle of the motor vehicle. 10. The motor vehicle as recited in claim 8, wherein the sensor includes a transducer mounted adjacent a coil spring. 11. The motor vehicle as recited in claim 1, wherein the conspicuity lamp is one of a tail lamp and a center high-mount stop lamp. 12. The motor vehicle as recited in claim 1, wherein the motor vehicle is a pickup truck, and the load of the motor vehicle is a load in a cargo box of the pickup truck. 13. A method, comprising:
illuminating a conspicuity lamp in proportion to a load of a motor vehicle. 14. The method as recited in claim 13, wherein the step of illuminating the conspicuity lamp includes illuminating a surface area of the conspicuity lamp in proportion to the load of the motor vehicle. 15. The method as recited in claim 14, wherein the surface area of the conspicuity lamp is divided into sections, and wherein a number of sections of the conspicuity lamp are illuminated in proportion to the load of the motor vehicle. 16. The method as recited in claim 15, wherein, when the load of the motor vehicle is below a predetermined threshold, none of the sections of the conspicuity lamp are illuminated. 17. The method as recited in claim 15, wherein, when the load of the motor vehicle meets or exceeds a maximum rated load for the motor vehicle, all of the sections of the conspicuity lamp are illuminated. 18. The method as recited in claim 17, further comprising:
preventing normal vehicle operation when the load of the motor vehicle meets or exceeds the maximum rated load for the motor vehicle. 19. The method as recited in claim 13, wherein the load of the motor vehicle is determined based on a signal from a sensor, and wherein the sensor includes one of a strain gauge and a transducer. 20. The method as recited in claim 13, wherein the conspicuity lamp is one of a tail lamp and a center high-mount stop lamp. | A motor vehicle according to an exemplary aspect of the present disclosure includes, among other things, a conspicuity lamp and a controller configured to illuminate the conspicuity lamp in proportion to a load of the motor vehicle. A method is also disclosed.1. A motor vehicle, comprising:
a conspicuity lamp; and a controller configured to illuminate the conspicuity lamp in proportion to a load of the motor vehicle. 2. The motor vehicle as recited in claim 1, wherein the controller is configured to illuminate a surface area of the conspicuity lamp in proportion to the load of the motor vehicle. 3. The motor vehicle as recited in claim 2, wherein the surface area of the conspicuity lamp is divided into sections, and wherein the controller is configured to illuminate a number of sections of the conspicuity lamp in proportion to the load of the motor vehicle. 4. The motor vehicle as recited in claim 3, wherein, when the load of the motor vehicle is below a predetermined threshold, the controller illuminates none of the sections of the conspicuity lamp. 5. The motor vehicle as recited in claim 3, wherein, when the load of the motor vehicle meets or exceeds a maximum rated load for the motor vehicle, the controller illuminates all of the sections of the conspicuity lamp. 6. The motor vehicle as recited in claim 5, wherein, when the load of the motor vehicle meets or exceeds the maximum rated load for the motor vehicle, the controller prevents normal vehicle operation. 7. The motor vehicle as recited in claim 1, wherein the controller illuminates the conspicuity lamp in proportion to a load of the motor vehicle and as the load of the motor vehicle relates to a maximum rated load of the motor vehicle. 8. The motor vehicle as recited in claim 1, further comprising:
a sensor configured to generate a signal indicative of the load of the motor vehicle. 9. The motor vehicle as recited in claim 8, wherein the sensor includes a strain gauge mounted adjacent a rear axle of the motor vehicle. 10. The motor vehicle as recited in claim 8, wherein the sensor includes a transducer mounted adjacent a coil spring. 11. The motor vehicle as recited in claim 1, wherein the conspicuity lamp is one of a tail lamp and a center high-mount stop lamp. 12. The motor vehicle as recited in claim 1, wherein the motor vehicle is a pickup truck, and the load of the motor vehicle is a load in a cargo box of the pickup truck. 13. A method, comprising:
illuminating a conspicuity lamp in proportion to a load of a motor vehicle. 14. The method as recited in claim 13, wherein the step of illuminating the conspicuity lamp includes illuminating a surface area of the conspicuity lamp in proportion to the load of the motor vehicle. 15. The method as recited in claim 14, wherein the surface area of the conspicuity lamp is divided into sections, and wherein a number of sections of the conspicuity lamp are illuminated in proportion to the load of the motor vehicle. 16. The method as recited in claim 15, wherein, when the load of the motor vehicle is below a predetermined threshold, none of the sections of the conspicuity lamp are illuminated. 17. The method as recited in claim 15, wherein, when the load of the motor vehicle meets or exceeds a maximum rated load for the motor vehicle, all of the sections of the conspicuity lamp are illuminated. 18. The method as recited in claim 17, further comprising:
preventing normal vehicle operation when the load of the motor vehicle meets or exceeds the maximum rated load for the motor vehicle. 19. The method as recited in claim 13, wherein the load of the motor vehicle is determined based on a signal from a sensor, and wherein the sensor includes one of a strain gauge and a transducer. 20. The method as recited in claim 13, wherein the conspicuity lamp is one of a tail lamp and a center high-mount stop lamp. | 2,800 |
11,669 | 11,669 | 15,439,672 | 2,828 | A packaged semiconductor device includes a substrate, a die, at least one electrical connector, a first mold compound formed of translucent material, and a second mold compound. A first face of the die is electrically and mechanically coupled to the substrate. The at least one electrical connector electrically couples at least one electrical contact on a second face of the die with at least one conductive path of the substrate. The first mold compound formed of a translucent material at least partially encapsulates the die and the at least one electrical connector. The second mold compound at least partially encapsulates the first mold compound and forms a window through which the first mold compound is exposed. In implementations the second mold compound is opaque and the first mold compound is transparent. In implementations the substrate includes a lead frame having a die flag and a plurality of lead frame fingers. | 1. A method of forming a packaged semiconductor device, comprising:
mechanically coupling a first face of a die with a substrate; electrically coupling at least one electrical contact on a second face of the die with at least one conductive path of the substrate using at least one electrical connector; at least partially encapsulating the die and the at least one electrical connector with a first mold compound comprised of a translucent material; at least partially encapsulating the first mold compound in a second mold compound; forming a window in the second mold compound to expose the first mold compound by removing a portion of the second mold compound and a portion of the first mold compound; and singulating the plurality of die after removal of the portion of the first mold compound and the portion of the second mold compound into a plurality of semiconductor packages. 2. The method of claim 1, further comprising electrically coupling the first face of the die with the substrate. 3. The method of claim 1, wherein forming a window in the second mold compound further comprises one of grinding and polishing the second mold compound and the first mold compound. 4. The method of claim 1, wherein partially encapsulating the die and at least one electrical connector with the first mold compound comprises forming substantially a shape of a spherical cap with the first mold compound. 5. The method of claim 1, wherein the second mold compound is comprised of an opaque material. 6. The method of claim 1, wherein the first mold compound is transparent. 7. The method of claim 1, wherein at least a majority of the second face of the die is exposed to light through the window. 8. A method of forming a packaged semiconductor device, comprising:
mechanically and electrically coupling a first face of a die with a die flag of a lead frame; electrically coupling a plurality of electrical contacts on a second face of the die with a plurality of lead frame fingers of the lead frame using wire bonds; at least partially encapsulating the die, the wire bonds, the die flag, and a portion of each lead frame finger with a first mold compound comprised of a translucent material; at least partially encapsulating the first mold compound and a portion of each lead frame finger in a second mold compound; removing a portion of the second mold compound and a portion of the first mold compound through one of grinding, polishing, and any combination thereof to form a window in the second mold compound through which the second face of the die is exposed to light through the first mold compound; and singulating the plurality of die after removal of the portion of the first mold compound and the portion of the second mold compound into a plurality of semiconductor packages. 9. The method of claim 8, wherein partially encapsulating the die, the wire bonds, the die flag, and the portion of each lead frame finger with the first mold compound comprises forming substantially a shape of a spherical cap with the first mold compound. 10. The method of claim 8, wherein the second mold compound is comprised of an opaque material. 11. The method of claim 8, wherein the first mold compound is transparent. 12. The method of claim 8, wherein all of the second face of the die is exposed to light through the window. 13. The method of claim 8, wherein the die comprises one of a light source and a light sensor. 14. A method of forming a plurality of packaged semiconductor devices, comprising:
providing a lead frame comprising a plurality of die flags and a plurality of lead frame fingers; mechanically coupling a plurality of die to each of a plurality of die flags at a first face of each of the plurality of die; electrically coupling at least one electrical connector to at least one electrical contact on a second face of the plurality of die with at least one lead frame finger of the plurality of lead frame fingers; at least partially encapsulating the plurality of die and the at least one electrical connector with a first mold compound, the first mold compound comprised of a translucent material; at least partially encapsulating the first mold compound and forming a window through which the first mold compound is exposed; removing a portion of the first mold compound and a portion of the second mold compound during processing of the lead frame by one of grinding, polishing, and any combination thereof; and singulating the plurality of semiconductor devices into a plurality of semiconductor packages after removal of the portion of the first mold compound and the portion of the second mold compound. 15. The method of claim 14, wherein each of the plurality of die is electrically coupled to each of the plurality of die flags at the first face of each of the plurality of die. 16. The method of claim 14, wherein the first mold compound is located over each of the plurality of die comprises substantially a shaped of a spherical cap having an upper portion removed. 17. The method of claim 14, wherein the second mold compound is comprised of an opaque material. 18. The method of claim 14, wherein the first mold compound is transparent. 19. The method of claim 14, wherein at least a majority of the second face of each of the plurality of die is exposed to light through the window. 20. The method of claim 14, wherein the die comprises one of a light source and a light sensor. | A packaged semiconductor device includes a substrate, a die, at least one electrical connector, a first mold compound formed of translucent material, and a second mold compound. A first face of the die is electrically and mechanically coupled to the substrate. The at least one electrical connector electrically couples at least one electrical contact on a second face of the die with at least one conductive path of the substrate. The first mold compound formed of a translucent material at least partially encapsulates the die and the at least one electrical connector. The second mold compound at least partially encapsulates the first mold compound and forms a window through which the first mold compound is exposed. In implementations the second mold compound is opaque and the first mold compound is transparent. In implementations the substrate includes a lead frame having a die flag and a plurality of lead frame fingers.1. A method of forming a packaged semiconductor device, comprising:
mechanically coupling a first face of a die with a substrate; electrically coupling at least one electrical contact on a second face of the die with at least one conductive path of the substrate using at least one electrical connector; at least partially encapsulating the die and the at least one electrical connector with a first mold compound comprised of a translucent material; at least partially encapsulating the first mold compound in a second mold compound; forming a window in the second mold compound to expose the first mold compound by removing a portion of the second mold compound and a portion of the first mold compound; and singulating the plurality of die after removal of the portion of the first mold compound and the portion of the second mold compound into a plurality of semiconductor packages. 2. The method of claim 1, further comprising electrically coupling the first face of the die with the substrate. 3. The method of claim 1, wherein forming a window in the second mold compound further comprises one of grinding and polishing the second mold compound and the first mold compound. 4. The method of claim 1, wherein partially encapsulating the die and at least one electrical connector with the first mold compound comprises forming substantially a shape of a spherical cap with the first mold compound. 5. The method of claim 1, wherein the second mold compound is comprised of an opaque material. 6. The method of claim 1, wherein the first mold compound is transparent. 7. The method of claim 1, wherein at least a majority of the second face of the die is exposed to light through the window. 8. A method of forming a packaged semiconductor device, comprising:
mechanically and electrically coupling a first face of a die with a die flag of a lead frame; electrically coupling a plurality of electrical contacts on a second face of the die with a plurality of lead frame fingers of the lead frame using wire bonds; at least partially encapsulating the die, the wire bonds, the die flag, and a portion of each lead frame finger with a first mold compound comprised of a translucent material; at least partially encapsulating the first mold compound and a portion of each lead frame finger in a second mold compound; removing a portion of the second mold compound and a portion of the first mold compound through one of grinding, polishing, and any combination thereof to form a window in the second mold compound through which the second face of the die is exposed to light through the first mold compound; and singulating the plurality of die after removal of the portion of the first mold compound and the portion of the second mold compound into a plurality of semiconductor packages. 9. The method of claim 8, wherein partially encapsulating the die, the wire bonds, the die flag, and the portion of each lead frame finger with the first mold compound comprises forming substantially a shape of a spherical cap with the first mold compound. 10. The method of claim 8, wherein the second mold compound is comprised of an opaque material. 11. The method of claim 8, wherein the first mold compound is transparent. 12. The method of claim 8, wherein all of the second face of the die is exposed to light through the window. 13. The method of claim 8, wherein the die comprises one of a light source and a light sensor. 14. A method of forming a plurality of packaged semiconductor devices, comprising:
providing a lead frame comprising a plurality of die flags and a plurality of lead frame fingers; mechanically coupling a plurality of die to each of a plurality of die flags at a first face of each of the plurality of die; electrically coupling at least one electrical connector to at least one electrical contact on a second face of the plurality of die with at least one lead frame finger of the plurality of lead frame fingers; at least partially encapsulating the plurality of die and the at least one electrical connector with a first mold compound, the first mold compound comprised of a translucent material; at least partially encapsulating the first mold compound and forming a window through which the first mold compound is exposed; removing a portion of the first mold compound and a portion of the second mold compound during processing of the lead frame by one of grinding, polishing, and any combination thereof; and singulating the plurality of semiconductor devices into a plurality of semiconductor packages after removal of the portion of the first mold compound and the portion of the second mold compound. 15. The method of claim 14, wherein each of the plurality of die is electrically coupled to each of the plurality of die flags at the first face of each of the plurality of die. 16. The method of claim 14, wherein the first mold compound is located over each of the plurality of die comprises substantially a shaped of a spherical cap having an upper portion removed. 17. The method of claim 14, wherein the second mold compound is comprised of an opaque material. 18. The method of claim 14, wherein the first mold compound is transparent. 19. The method of claim 14, wherein at least a majority of the second face of each of the plurality of die is exposed to light through the window. 20. The method of claim 14, wherein the die comprises one of a light source and a light sensor. | 2,800 |
11,670 | 11,670 | 15,985,109 | 2,831 | Aspects of the instant disclosure relate to electronic cigarettes; more particularly, to electronic cigarettes including a clearomizer. Various embodiments of the present disclosure are directed to a clearomizer with a refillable electronic cigarette juice tank with a first fill aperture, and a mouthpiece including a second fill aperture. The mouthpiece and the refillable tank rotate relative to one another along a common longitudinal axis to align the fill apertures, and facilitate filling of the refillable tank. | 1-20. (canceled) 21. An electronic cigarette cartomizer comprising:
a hemicylindrical port. 22. The cartomizer of claim 21, wherein the hemicylindrical port includes a fluid inlet, and electrical pads, at least one of the electrical pads are electrically coupled to a heater coil within the cartomizer. 23. The cartomizer of claim 22, wherein the hemicylindrical port is configured and arranged to
electrically couple the heater coil with electrical circuitry of a power supply portion of an electronic cigarette, and transfer a fluid from the power supply portion to the cartomizer in response to a vacuum pressure within the cartomizer 24. The cartomizer of claim 22, wherein the at least one of the electrical pads are electrically coupled to memory circuitry within the cartomizer. 25. The cartomizer of claim 22, wherein the electrical pads are located on a flat surface of the hemicylindrical port. 26. The cartomizer of claim 21, wherein the hemicylindrical port is further configured and arranged to be mechanically and electrically coupled to a mating hemicylindrical port on a power supply portion of an electronic cigarette. 27. The cartomizer of claim 21, further including
a refillable tank configured and arranged to contain electronic cigarette juice; a heater coil configured and arranged to atomize electronic cigarette juice in response to a current draw across the heater coil; a wick configured and arranged to draw the electronic cigarette juice from the refillable tank to the heater coil by capillary action; and a mouthpiece coupled to a proximal portion of the refillable tank. 28. The cartomizer of claim 27, wherein the mouthpiece includes a nozzle, a vapor chamber, and a vent aperture, the vapor chamber located between the nozzle and the vent aperture. 29. The cartomizer of claim 27, wherein the refillable tank further includes a pressure release valve. 30. The cartomizer of claim 21, further including
a tank configured and arranged to contain electronic cigarette juice; a heater coil configured and arranged to atomize electronic cigarette juice in response to a current draw across the heater coil; and a wick configured and arranged to draw the electronic cigarette juice from the tank to the heater coil by capillary action. 31. The cartomizer of claim 21, wherein the hemicylindrical port is configured and arranged to prevent relative rotation between the electronic cigarette cartomizer and a power supply portion coupled thereto, along a longitudinal axis. 32. The cartomizer of claim 21, wherein the cartomizer is a clearomizer including a refillable tank and a mouthpiece. 33. The cartomizer of claim 32, wherein
the refillable tank includes
a tank proximal portion and a tank distal portion,
a first fill aperture, and
a first annular channel around the proximal portion of the tank; and
the mouthpiece includes
a mouthpiece proximal portion and a mouthpiece distal portion,
a second fill aperture, and
a first annular protuberance around the distal portion of the mouthpiece, wherein the first annular protuberance is slidably retained in the first annular channel to facilitate rotation of the mouthpiece relative to the refillable tank;
wherein the refillable tank and the mouthpiece are thereby configured and arranged to permit relative rotation to selectably align and misalign the first and second fill apertures. 34. The cartomizer of claim 33, wherein the refillable tank and the mouthpiece are rotatably coupled by the first annular channel and the first annular protuberance such that the mouthpiece may be rotated relative to the refillable tank about a common longitudinal axis. 35. The cartomizer of claim 33, wherein the refillable tank includes a first vent aperture, and the mouthpiece includes a second vent aperture; the mouthpiece further configured and arranged to rotatably align the first and second vent apertures concurrently with the alignment of the first and second fill apertures. 36. The cartomizer of claim 35, wherein the fill and vent apertures are further configured and arranged to be rotatably misalignable to prevent escape of the electronic cigarette juice from within the refillable tank. | Aspects of the instant disclosure relate to electronic cigarettes; more particularly, to electronic cigarettes including a clearomizer. Various embodiments of the present disclosure are directed to a clearomizer with a refillable electronic cigarette juice tank with a first fill aperture, and a mouthpiece including a second fill aperture. The mouthpiece and the refillable tank rotate relative to one another along a common longitudinal axis to align the fill apertures, and facilitate filling of the refillable tank.1-20. (canceled) 21. An electronic cigarette cartomizer comprising:
a hemicylindrical port. 22. The cartomizer of claim 21, wherein the hemicylindrical port includes a fluid inlet, and electrical pads, at least one of the electrical pads are electrically coupled to a heater coil within the cartomizer. 23. The cartomizer of claim 22, wherein the hemicylindrical port is configured and arranged to
electrically couple the heater coil with electrical circuitry of a power supply portion of an electronic cigarette, and transfer a fluid from the power supply portion to the cartomizer in response to a vacuum pressure within the cartomizer 24. The cartomizer of claim 22, wherein the at least one of the electrical pads are electrically coupled to memory circuitry within the cartomizer. 25. The cartomizer of claim 22, wherein the electrical pads are located on a flat surface of the hemicylindrical port. 26. The cartomizer of claim 21, wherein the hemicylindrical port is further configured and arranged to be mechanically and electrically coupled to a mating hemicylindrical port on a power supply portion of an electronic cigarette. 27. The cartomizer of claim 21, further including
a refillable tank configured and arranged to contain electronic cigarette juice; a heater coil configured and arranged to atomize electronic cigarette juice in response to a current draw across the heater coil; a wick configured and arranged to draw the electronic cigarette juice from the refillable tank to the heater coil by capillary action; and a mouthpiece coupled to a proximal portion of the refillable tank. 28. The cartomizer of claim 27, wherein the mouthpiece includes a nozzle, a vapor chamber, and a vent aperture, the vapor chamber located between the nozzle and the vent aperture. 29. The cartomizer of claim 27, wherein the refillable tank further includes a pressure release valve. 30. The cartomizer of claim 21, further including
a tank configured and arranged to contain electronic cigarette juice; a heater coil configured and arranged to atomize electronic cigarette juice in response to a current draw across the heater coil; and a wick configured and arranged to draw the electronic cigarette juice from the tank to the heater coil by capillary action. 31. The cartomizer of claim 21, wherein the hemicylindrical port is configured and arranged to prevent relative rotation between the electronic cigarette cartomizer and a power supply portion coupled thereto, along a longitudinal axis. 32. The cartomizer of claim 21, wherein the cartomizer is a clearomizer including a refillable tank and a mouthpiece. 33. The cartomizer of claim 32, wherein
the refillable tank includes
a tank proximal portion and a tank distal portion,
a first fill aperture, and
a first annular channel around the proximal portion of the tank; and
the mouthpiece includes
a mouthpiece proximal portion and a mouthpiece distal portion,
a second fill aperture, and
a first annular protuberance around the distal portion of the mouthpiece, wherein the first annular protuberance is slidably retained in the first annular channel to facilitate rotation of the mouthpiece relative to the refillable tank;
wherein the refillable tank and the mouthpiece are thereby configured and arranged to permit relative rotation to selectably align and misalign the first and second fill apertures. 34. The cartomizer of claim 33, wherein the refillable tank and the mouthpiece are rotatably coupled by the first annular channel and the first annular protuberance such that the mouthpiece may be rotated relative to the refillable tank about a common longitudinal axis. 35. The cartomizer of claim 33, wherein the refillable tank includes a first vent aperture, and the mouthpiece includes a second vent aperture; the mouthpiece further configured and arranged to rotatably align the first and second vent apertures concurrently with the alignment of the first and second fill apertures. 36. The cartomizer of claim 35, wherein the fill and vent apertures are further configured and arranged to be rotatably misalignable to prevent escape of the electronic cigarette juice from within the refillable tank. | 2,800 |
11,671 | 11,671 | 15,168,310 | 2,892 | Semiconductor devices include a silicon carbide drift region having an upper portion and a lower portion. A first contact is on the upper portion of the drift region and a second contact is on the lower portion of the drift region. The drift region includes a superjunction structure that includes a p-n junction that is formed at an angle of between 10° and 30° from a plane that is normal to a top surface of the drift region. The p-n junction extends within +/−1.5° of a crystallographic axis of the silicon carbide material forming the drift region. | 1. A semiconductor device, comprising:
a drift region having an upper portion and a lower portion, the drift region comprising silicon carbide; a first contact on the upper portion of the drift region; and a second contact on the lower portion of the drift region, wherein the drift region includes a superjunction structure that includes a p-n junction that is formed at an angle of between 6° and 35° from a plane that is normal to a top surface of the drift region, wherein the p-n junction extends within +/−1.5° of a crystallographic axis of the silicon carbide material forming the drift region. 2. The semiconductor device of claim 1, wherein the silicon carbide is 4H silicon carbide, and wherein the crystallographic axis is one of the <11-23>, <-1-123>, <1-213>, <-12-13>, <2-1-13> or <-2113> crystallographic axes. 3. The semiconductor device of claim 2, wherein the p-n junction comprises an interface between a p-type pillar and an n-type pillar, wherein a width of the p-type pillar is approximately equal to a width of the n-type pillar. 4. The semiconductor device of claim 3, wherein the p-type and n-type pillars extend at least 4 microns into the drift region from an upper surface of the drift region. 5. The semiconductor device of claim 4, wherein the p-type pillar has a doping concentration that varies as a function of depth from an upper surface of the drift region by less than a factor of ten throughout at least a 2.5 micron deep portion of the p-type pillar. 6. A semiconductor device, comprising:
a drift region having an upper portion and a lower portion, the drift region comprising silicon carbide; a first contact on the upper portion of the drift region; and a second contact on the lower portion of the drift region, wherein the drift region includes:
a first pillar that is doped with first conductivity type impurities, the first pillar having a first sidewall that is slanted at an angle of between 10° and 13°, between 15.5° and 18.5°, or between 30° and 33° from the <0001> crystallographic axis; and
a second pillar that is doped with second conductivity type impurities that are opposite the first conductivity type impurities adjacent the first pillar. 7. The semiconductor device of claim 6, wherein the first pillar and the second pillar form a p-n junction in the drift region that is at least part of a superjunction structure in the drift region. 8. The semiconductor device of claim 6, wherein the second pillar has a first sidewall that is slanted at an angle of between 10° and 13°, between 15.5° and 18.5°, or between 30° and 33° from the <0001> crystallographic axis. 9. The semiconductor device of claim 6, wherein the first sidewall of the first pillar is slanted at the same angle as the first sidewall of the second pillar. 10. The semiconductor device of claim 6, wherein the first sidewall of the first pillar faces and directly contacts the first sidewall of the second pillar. 11. The semiconductor device of claim 6, wherein the first sidewall of the first pillar is coplanar with the first sidewall of the second pillar. 12. The semiconductor device of claim 6, wherein a first volume of the first pillar is approximately equal to a second volume of the second pillar. 13. The semiconductor device of claim 6, further comprising a silicon carbide substrate between the drift region and the second contact, wherein the first conductivity type impurities are p-type conductivity impurities, and wherein the second conductivity type impurities are n-type conductivity impurities. 14. The semiconductor device of claim 13, wherein the silicon carbide substrate is cut at an oblique angle to the plane defined by the <10-10> and <11-20> crystallographic axes. 15. (canceled) 16. The semiconductor device of claim 14, wherein the oblique angle is between 2° and 8°. 17. (canceled) 18. The semiconductor device of claim 6, wherein the first and second pillars extend at least 4 microns into the drift region from an upper surface of the drift region. 19. (canceled) 20. The semiconductor device of claim 6, wherein the first pillar has a doping concentration that varies as a function of depth from an upper surface of the drift region by less than a factor of ten throughout at least a 2.5 micron deep portion of the first pillar. 21. A semiconductor device, comprising:
a drift region having an upper portion and a lower portion, the drift region comprising silicon carbide; a first contact on the upper portion of the drift region; and a second contact on the lower portion of the drift region, wherein the drift region includes a superjunction structure that includes:
a first pillar that is doped with first conductivity type impurities, the first pillar having a first sidewall that is slanted at an angle of between −1.5° and 1.5° from the <11-20> crystallographic axis; and
a second pillar that is doped with second conductivity type impurities that are opposite the first conductivity type impurities adjacent the first pillar, the second pillar having a first sidewall that is slanted at an angle of between −1.5° and 1.5° from the <11-20> crystallographic axis. 22. The semiconductor device of claim 21, wherein the first pillar and the second pillar have approximately the same width. 23. The semiconductor device of claim 22, wherein the first and second pillars extend at least 5 microns into the drift region from an upper surface of the drift region. 24-58. (canceled) | Semiconductor devices include a silicon carbide drift region having an upper portion and a lower portion. A first contact is on the upper portion of the drift region and a second contact is on the lower portion of the drift region. The drift region includes a superjunction structure that includes a p-n junction that is formed at an angle of between 10° and 30° from a plane that is normal to a top surface of the drift region. The p-n junction extends within +/−1.5° of a crystallographic axis of the silicon carbide material forming the drift region.1. A semiconductor device, comprising:
a drift region having an upper portion and a lower portion, the drift region comprising silicon carbide; a first contact on the upper portion of the drift region; and a second contact on the lower portion of the drift region, wherein the drift region includes a superjunction structure that includes a p-n junction that is formed at an angle of between 6° and 35° from a plane that is normal to a top surface of the drift region, wherein the p-n junction extends within +/−1.5° of a crystallographic axis of the silicon carbide material forming the drift region. 2. The semiconductor device of claim 1, wherein the silicon carbide is 4H silicon carbide, and wherein the crystallographic axis is one of the <11-23>, <-1-123>, <1-213>, <-12-13>, <2-1-13> or <-2113> crystallographic axes. 3. The semiconductor device of claim 2, wherein the p-n junction comprises an interface between a p-type pillar and an n-type pillar, wherein a width of the p-type pillar is approximately equal to a width of the n-type pillar. 4. The semiconductor device of claim 3, wherein the p-type and n-type pillars extend at least 4 microns into the drift region from an upper surface of the drift region. 5. The semiconductor device of claim 4, wherein the p-type pillar has a doping concentration that varies as a function of depth from an upper surface of the drift region by less than a factor of ten throughout at least a 2.5 micron deep portion of the p-type pillar. 6. A semiconductor device, comprising:
a drift region having an upper portion and a lower portion, the drift region comprising silicon carbide; a first contact on the upper portion of the drift region; and a second contact on the lower portion of the drift region, wherein the drift region includes:
a first pillar that is doped with first conductivity type impurities, the first pillar having a first sidewall that is slanted at an angle of between 10° and 13°, between 15.5° and 18.5°, or between 30° and 33° from the <0001> crystallographic axis; and
a second pillar that is doped with second conductivity type impurities that are opposite the first conductivity type impurities adjacent the first pillar. 7. The semiconductor device of claim 6, wherein the first pillar and the second pillar form a p-n junction in the drift region that is at least part of a superjunction structure in the drift region. 8. The semiconductor device of claim 6, wherein the second pillar has a first sidewall that is slanted at an angle of between 10° and 13°, between 15.5° and 18.5°, or between 30° and 33° from the <0001> crystallographic axis. 9. The semiconductor device of claim 6, wherein the first sidewall of the first pillar is slanted at the same angle as the first sidewall of the second pillar. 10. The semiconductor device of claim 6, wherein the first sidewall of the first pillar faces and directly contacts the first sidewall of the second pillar. 11. The semiconductor device of claim 6, wherein the first sidewall of the first pillar is coplanar with the first sidewall of the second pillar. 12. The semiconductor device of claim 6, wherein a first volume of the first pillar is approximately equal to a second volume of the second pillar. 13. The semiconductor device of claim 6, further comprising a silicon carbide substrate between the drift region and the second contact, wherein the first conductivity type impurities are p-type conductivity impurities, and wherein the second conductivity type impurities are n-type conductivity impurities. 14. The semiconductor device of claim 13, wherein the silicon carbide substrate is cut at an oblique angle to the plane defined by the <10-10> and <11-20> crystallographic axes. 15. (canceled) 16. The semiconductor device of claim 14, wherein the oblique angle is between 2° and 8°. 17. (canceled) 18. The semiconductor device of claim 6, wherein the first and second pillars extend at least 4 microns into the drift region from an upper surface of the drift region. 19. (canceled) 20. The semiconductor device of claim 6, wherein the first pillar has a doping concentration that varies as a function of depth from an upper surface of the drift region by less than a factor of ten throughout at least a 2.5 micron deep portion of the first pillar. 21. A semiconductor device, comprising:
a drift region having an upper portion and a lower portion, the drift region comprising silicon carbide; a first contact on the upper portion of the drift region; and a second contact on the lower portion of the drift region, wherein the drift region includes a superjunction structure that includes:
a first pillar that is doped with first conductivity type impurities, the first pillar having a first sidewall that is slanted at an angle of between −1.5° and 1.5° from the <11-20> crystallographic axis; and
a second pillar that is doped with second conductivity type impurities that are opposite the first conductivity type impurities adjacent the first pillar, the second pillar having a first sidewall that is slanted at an angle of between −1.5° and 1.5° from the <11-20> crystallographic axis. 22. The semiconductor device of claim 21, wherein the first pillar and the second pillar have approximately the same width. 23. The semiconductor device of claim 22, wherein the first and second pillars extend at least 5 microns into the drift region from an upper surface of the drift region. 24-58. (canceled) | 2,800 |
11,672 | 11,672 | 15,139,167 | 2,835 | A computing device is described. The computing device includes a first portion with a protrusion and a second portion separably connected to the first portion. The second portion has a receptacle. An undocking assist mechanism is configured to separate the first portion from the second portion when the protrusion is at least partially inserted into the receptacle. An actuator is configured to actuate the undocking assist mechanism. Methods of use are also described. | 1. A computing device comprising:
a first portion with a protrusion; a second portion separably connected to the first portion, the second portion having a receptacle; an undocking assist mechanism configured to separate the first portion from the second portion when the protrusion is at least partially inserted into the receptacle, the undocking assist mechanism slideable within the receptacle; and an actuator in communication with and configured to actuate the undocking assist mechanism. 2. The computing device of claim 1, wherein the protrusion is a portion of the first portion. 3. The computing device of claim 1, wherein the receptacle includes a locking mechanism. 4. The computing device of claim 1, an aperture of the receptacle is rounded on at least one edge. 5. The computing device of claim 1, wherein a front gap between a front surface of the protrusion and a front surface of the receptacle is less than 0.6 mm and a back gap between a back surface of the protrusion and a back surface of the receptacle is less than 0.6 mm. 6. The computing device of claim 1, wherein the protrusion is elongate. 7. The computing device of claim 1, wherein the protrusion is inserted into the receptacle between 2 mm and 12 mm. 8. The computing device of claim 1, wherein the undocking assist mechanism pushes the protrusion parallel to a longitudinal axis of the protrusion. 9. A computing device comprising:
a first portion; a second portion separably connected to the first portion; a locking mechanism configured to lock the first portion to the second portion, the locking mechanism includes a locking receptacle connected to the first portion and a locking protrusion connected to the second portion, the locking receptacle and the locking protrusion cooperating to limit movement of the first portion relative to the second portion; an actuator mechanically coupled to the locking mechanism and configured to unlock the first portion from the second portion; and an undocking assist mechanism configured to separate the first portion from the second portion when the locking protrusion is at least partially inserted into the locking receptacle, the undocking assist mechanism abuts the protrusion in a docked configuration, in an undocked configuration, and between the docked configuration and undocked configuration. 10. The computing device of claim 9, wherein the locking mechanism further comprises a wedge locking mechanism. 11. The computing device of claim 10, wherein the wedge locking mechanism abuts the locking receptacle and the locking protrusion. 12. The computing device of claim 9, wherein the locking mechanism and the undocking assist mechanism are actuated by the actuator. 13. The computing device of claim 9, wherein the locking mechanism is actuated by the actuator and the undocking assist mechanism is actuated by a separate actuator. 14. The computing device of claim 9, further comprising one or more magnets on the first portion and the second portion, wherein the undocking assist mechanism is configured to separate the first portion from the second portion by applying a force to the locking protrusion sufficient to overcome the force of the magnets. 15. The computing device of claim 9, wherein the actuator is a shape memory alloy (SMA) wire. 16. A method for at least partially separating a first portion from a second portion of a computing device, the method comprising:
receiving a request to eject the first portion from the second portion, the first portion having a locking protrusion, the second portion having a locking receptacle where the locking protrusion is at least partially inserted into the locking receptacle, the locking protrusion slideable within the locking receptacle; actuating an undocking assist mechanism to separate the first portion from the second portion; and separating the first portion from the second portion by a distance without applying an external force. 17. The method of claim 16, further comprising actuating a locking mechanism to unlock the locking protrusion from the locking receptacle. 18. The method of claim 17, wherein the locking mechanism is actuated to unlock the locking protrusion from the locking receptacle before the undocking assist mechanism is actuated to separate the first portion from the second portion. 19. The method of claim 18, further comprising receiving a request to unlock the first portion from the second portion. 20. The method of claim 19, wherein the first portion is not separated from the second portion for a period of time after the locking mechanism is actuated to unlock the locking protrusion from the locking receptacle. 21. The method of claim 16, wherein separating the first portion from the second portion by a distance without applying an external force indicates to a user that the first portion may be completely separated by the user. | A computing device is described. The computing device includes a first portion with a protrusion and a second portion separably connected to the first portion. The second portion has a receptacle. An undocking assist mechanism is configured to separate the first portion from the second portion when the protrusion is at least partially inserted into the receptacle. An actuator is configured to actuate the undocking assist mechanism. Methods of use are also described.1. A computing device comprising:
a first portion with a protrusion; a second portion separably connected to the first portion, the second portion having a receptacle; an undocking assist mechanism configured to separate the first portion from the second portion when the protrusion is at least partially inserted into the receptacle, the undocking assist mechanism slideable within the receptacle; and an actuator in communication with and configured to actuate the undocking assist mechanism. 2. The computing device of claim 1, wherein the protrusion is a portion of the first portion. 3. The computing device of claim 1, wherein the receptacle includes a locking mechanism. 4. The computing device of claim 1, an aperture of the receptacle is rounded on at least one edge. 5. The computing device of claim 1, wherein a front gap between a front surface of the protrusion and a front surface of the receptacle is less than 0.6 mm and a back gap between a back surface of the protrusion and a back surface of the receptacle is less than 0.6 mm. 6. The computing device of claim 1, wherein the protrusion is elongate. 7. The computing device of claim 1, wherein the protrusion is inserted into the receptacle between 2 mm and 12 mm. 8. The computing device of claim 1, wherein the undocking assist mechanism pushes the protrusion parallel to a longitudinal axis of the protrusion. 9. A computing device comprising:
a first portion; a second portion separably connected to the first portion; a locking mechanism configured to lock the first portion to the second portion, the locking mechanism includes a locking receptacle connected to the first portion and a locking protrusion connected to the second portion, the locking receptacle and the locking protrusion cooperating to limit movement of the first portion relative to the second portion; an actuator mechanically coupled to the locking mechanism and configured to unlock the first portion from the second portion; and an undocking assist mechanism configured to separate the first portion from the second portion when the locking protrusion is at least partially inserted into the locking receptacle, the undocking assist mechanism abuts the protrusion in a docked configuration, in an undocked configuration, and between the docked configuration and undocked configuration. 10. The computing device of claim 9, wherein the locking mechanism further comprises a wedge locking mechanism. 11. The computing device of claim 10, wherein the wedge locking mechanism abuts the locking receptacle and the locking protrusion. 12. The computing device of claim 9, wherein the locking mechanism and the undocking assist mechanism are actuated by the actuator. 13. The computing device of claim 9, wherein the locking mechanism is actuated by the actuator and the undocking assist mechanism is actuated by a separate actuator. 14. The computing device of claim 9, further comprising one or more magnets on the first portion and the second portion, wherein the undocking assist mechanism is configured to separate the first portion from the second portion by applying a force to the locking protrusion sufficient to overcome the force of the magnets. 15. The computing device of claim 9, wherein the actuator is a shape memory alloy (SMA) wire. 16. A method for at least partially separating a first portion from a second portion of a computing device, the method comprising:
receiving a request to eject the first portion from the second portion, the first portion having a locking protrusion, the second portion having a locking receptacle where the locking protrusion is at least partially inserted into the locking receptacle, the locking protrusion slideable within the locking receptacle; actuating an undocking assist mechanism to separate the first portion from the second portion; and separating the first portion from the second portion by a distance without applying an external force. 17. The method of claim 16, further comprising actuating a locking mechanism to unlock the locking protrusion from the locking receptacle. 18. The method of claim 17, wherein the locking mechanism is actuated to unlock the locking protrusion from the locking receptacle before the undocking assist mechanism is actuated to separate the first portion from the second portion. 19. The method of claim 18, further comprising receiving a request to unlock the first portion from the second portion. 20. The method of claim 19, wherein the first portion is not separated from the second portion for a period of time after the locking mechanism is actuated to unlock the locking protrusion from the locking receptacle. 21. The method of claim 16, wherein separating the first portion from the second portion by a distance without applying an external force indicates to a user that the first portion may be completely separated by the user. | 2,800 |
11,673 | 11,673 | 14,861,931 | 2,859 | A device for wirelessly charging a battery includes a power amplifier having a transmitter coil generating a magnetic field for wirelessly charging a battery. A low pass filter arrangement is electrically coupled to an output of the power amplifier. A band stop filter is electrically coupled to an output of the low pass filter arrangement. An output of the band stop filter is electrically coupled to a resistive load associated with the battery. The low pass filter arrangement and the band stop filter are configured to transform a load impedance associated with the transmitter coil to produce a current at the output of the power amplifier that remains substantially constant in response to changes in the load impedance. | 1. A device for wirelessly charging a battery, comprising:
a power amplifier comprising a transmitter coil to generate a magnetic field for wirelessly charging a battery; a low pass filter arrangement electrically coupled to an output of the power amplifier; and a band stop filter electrically coupled to an output of the low pass filter arrangement comprising an output to electrically couple to a transmitter coil, wherein the low pass filter arrangement and the band stop filter are configured to transform a load impedance associated with the transmitter coil to produce a current at an input of the transmitter coil that remains substantially constant in response to changes in the load impedance. 2. The device of claim 1, wherein the battery is associated with the transmitter coil through inductive coupling between the transmitter coil and a receiver coil and presented as a load resistance associated with the transmitter coil. 3. The device of claim 1, wherein the low pass filter arrangement and the band stop filter are configured to transform the load impedance associated with the transmitter coil to match the load impedance associated with the transmitter coil with the impedance of the power amplifier when delivering desired power to the battery under charge. 4. The device of claim 1, wherein the low pass filter arrangement comprises a first stage low pass filter series connected to a second stage low pass filter. 5. The device of claim 4, the first stage low pass filter comprises a first inductor and a first capacitor, and the second stage low pass filter comprises a second inductor and a second capacitor. 6. The device of claim 1, wherein the power amplifier has an output impedance R, the resistive load having an input impedance RL, the low pass filter arrangement providing an output voltage with a phase shift of φ/2, wherein
φ=π−arctan((R L R−R 2)1/2/(R L−2R)). 7. The device of claim 6, wherein the low pass filter arrangement is configured to transform the power amplifier output impedance R to match the resistive load impedance RL. 8. The device of claim 1 wherein the low pass filter arrangement and the band stop filter are configured to filter out harmonics of the current produced at the output of the power amplifier. 9. The device of claim 1, wherein the second stage low pass filter is configured to interconnect the first stage low pass filter series and the band stop filter. 10. The device of claim 1 wherein the low pass filter arrangement and the band stop filter are configured to rotate a real axis on a smith chart clockwise and rotate a constant power contour counter clockwise to align a maximum gradient path with the real axis. 11. The device of claim 10 wherein the low pass filter arrangement and the band stop filter are configured to rotate the real axis on a smith chart clockwise by an angle φ which corresponds to a phase shift of φ/2. 12. The device of claim 11 wherein the low pass filter arrangement comprises a first stage low pass filter series connected to a second stage low pass filter, the first stage low pass filter comprising a first inductor L1 and a first capacitor C1, and the second stage low pass filter comprises a second inductor L2 and a second capacitor C2, an intermediate impedance RINT being provided between the first stage low pass filter and the second stage low pass filter, wherein the values of L1, C1, L2 and C2, satisfy the following equations to draw substantially constant current from the power amplifier:
L 1 =R INT Q L1/ω
C 1 =Q L1 /Rω
Q L1=(R/R INT−1)1/2
L 2 =R INT Q L2/ω
C 2 =Q L2 /R Lω
Q L2=(R L /R INT—1)1/2
wherein ω is an angular frequency, R is an impedance at an input of the first stage low pass filter, RL is an impedance at an output of the second stage low pass filter and Q is a quality factor. 13. The device of claim 12, wherein the phase shift combination of the low pass filter arrangement and the band stop filter are configured to rotate the load line on the smith chart from the real axis to the desired maximum gradient path of constant power contour through selecting the intermediate impedance RINT and the value of Q. 14. A method for wirelessly charging a battery, comprising:
providing a power amplifier and a transmitter coil; using the transmitter coil to generate a magnetic field for wirelessly charging a battery; electrically coupling a low pass filter arrangement to an output of the power amplifier; electrically coupling a band stop filter to an output of the low pass filter arrangement; electrically coupling an output of the band stop filter to a transmitter coil associated with the battery through inductive coupling with a receiver coil; and using the low pass filter arrangement and the band stop filter to transform a load impedance associated with the transmitter coil to produce a current at the an input of the transmitter coil that is substantially constant in response to changes in the load impedance. 15. The method of claim 14, wherein the battery is associated with the transmitter coil through inductive coupling between the transmitter coil and the receiver coil and presented as a load resistance associated with the transmitter coil. 16. The method of claim 14, wherein the low pass filter arrangement and the band stop filter are configured to transform a load impedance associated with the transmitter coil to match the load impedance associated with the transmitter coil with the impedance of the power amplifier when delivering desired power to the battery under charge. 17. The method of claim 14, wherein the low pass filter arrangement comprises a first stage low pass filter series connected to a second stage low pass filter. 18. The method of claim 17, wherein the first stage low pass filter comprises a first inductor and a first capacitor, and the second stage low pass filter comprises a second inductor and a second capacitor. 19. The method of claim 14, wherein the power amplifier has an output impedance R, the resistive load having an input impedance RL, the method further comprising using the low pass filter arrangement to provide an output voltage with a phase shift of φ/2, wherein:
φ=π−arctan((R L R−R 2)1/2/(R L−2R)). 20. The method of claim 19, further comprising using the low pass filter arrangement are configured to transform the power amplifier output impedance R to match the resistive load impedance RL. 21. The method of claim 14 wherein the low pass filter arrangement and the band stop filter are configured to filter out harmonics of the current produced at the output of the power amplifier. 22. The method of claim 14, wherein the second stage low pass filter are configured to interconnect the first stage low pass filter series and the band stop filter. 23. A device for wirelessly charging a battery, comprising:
a power amplifier and a transmitter coil associated with the battery, the transmitter coil to generate a magnetic field for wirelessly charging a battery; and a filtering circuit electrically connected to an output of the power amplifier and comprising an output electrically connected to the transmitter coil associated with the battery through inductive coupling with a receiver coil; wherein the filtering circuit comprises a series combination of a band stop filter, a first stage low pass filter, and a second stage low pass filter, the series combination of the band stop filter, the first stage low pass filter, and the second stage low pass filter to transform a load impedance associated with the transmitter coil to produce a current at the output of the power amplifier that is substantially constant in response to changes in the load impedance. 24. The device of claim 23, wherein the battery is associated with the transmitter coil through inductive coupling between the transmitter coil and the receiver coil and presented as a load resistance associated with the transmitter coil. 25. The device of claim 23, wherein the series combination of the band stop filter, the first stage low pass filter, and the second stage low pass filter are configured to transform a load impedance associated with the transmitter coil to match the load impedance associated with the transmitter coil with the impedance of the power amplifier when delivering desired power to the battery under charge. | A device for wirelessly charging a battery includes a power amplifier having a transmitter coil generating a magnetic field for wirelessly charging a battery. A low pass filter arrangement is electrically coupled to an output of the power amplifier. A band stop filter is electrically coupled to an output of the low pass filter arrangement. An output of the band stop filter is electrically coupled to a resistive load associated with the battery. The low pass filter arrangement and the band stop filter are configured to transform a load impedance associated with the transmitter coil to produce a current at the output of the power amplifier that remains substantially constant in response to changes in the load impedance.1. A device for wirelessly charging a battery, comprising:
a power amplifier comprising a transmitter coil to generate a magnetic field for wirelessly charging a battery; a low pass filter arrangement electrically coupled to an output of the power amplifier; and a band stop filter electrically coupled to an output of the low pass filter arrangement comprising an output to electrically couple to a transmitter coil, wherein the low pass filter arrangement and the band stop filter are configured to transform a load impedance associated with the transmitter coil to produce a current at an input of the transmitter coil that remains substantially constant in response to changes in the load impedance. 2. The device of claim 1, wherein the battery is associated with the transmitter coil through inductive coupling between the transmitter coil and a receiver coil and presented as a load resistance associated with the transmitter coil. 3. The device of claim 1, wherein the low pass filter arrangement and the band stop filter are configured to transform the load impedance associated with the transmitter coil to match the load impedance associated with the transmitter coil with the impedance of the power amplifier when delivering desired power to the battery under charge. 4. The device of claim 1, wherein the low pass filter arrangement comprises a first stage low pass filter series connected to a second stage low pass filter. 5. The device of claim 4, the first stage low pass filter comprises a first inductor and a first capacitor, and the second stage low pass filter comprises a second inductor and a second capacitor. 6. The device of claim 1, wherein the power amplifier has an output impedance R, the resistive load having an input impedance RL, the low pass filter arrangement providing an output voltage with a phase shift of φ/2, wherein
φ=π−arctan((R L R−R 2)1/2/(R L−2R)). 7. The device of claim 6, wherein the low pass filter arrangement is configured to transform the power amplifier output impedance R to match the resistive load impedance RL. 8. The device of claim 1 wherein the low pass filter arrangement and the band stop filter are configured to filter out harmonics of the current produced at the output of the power amplifier. 9. The device of claim 1, wherein the second stage low pass filter is configured to interconnect the first stage low pass filter series and the band stop filter. 10. The device of claim 1 wherein the low pass filter arrangement and the band stop filter are configured to rotate a real axis on a smith chart clockwise and rotate a constant power contour counter clockwise to align a maximum gradient path with the real axis. 11. The device of claim 10 wherein the low pass filter arrangement and the band stop filter are configured to rotate the real axis on a smith chart clockwise by an angle φ which corresponds to a phase shift of φ/2. 12. The device of claim 11 wherein the low pass filter arrangement comprises a first stage low pass filter series connected to a second stage low pass filter, the first stage low pass filter comprising a first inductor L1 and a first capacitor C1, and the second stage low pass filter comprises a second inductor L2 and a second capacitor C2, an intermediate impedance RINT being provided between the first stage low pass filter and the second stage low pass filter, wherein the values of L1, C1, L2 and C2, satisfy the following equations to draw substantially constant current from the power amplifier:
L 1 =R INT Q L1/ω
C 1 =Q L1 /Rω
Q L1=(R/R INT−1)1/2
L 2 =R INT Q L2/ω
C 2 =Q L2 /R Lω
Q L2=(R L /R INT—1)1/2
wherein ω is an angular frequency, R is an impedance at an input of the first stage low pass filter, RL is an impedance at an output of the second stage low pass filter and Q is a quality factor. 13. The device of claim 12, wherein the phase shift combination of the low pass filter arrangement and the band stop filter are configured to rotate the load line on the smith chart from the real axis to the desired maximum gradient path of constant power contour through selecting the intermediate impedance RINT and the value of Q. 14. A method for wirelessly charging a battery, comprising:
providing a power amplifier and a transmitter coil; using the transmitter coil to generate a magnetic field for wirelessly charging a battery; electrically coupling a low pass filter arrangement to an output of the power amplifier; electrically coupling a band stop filter to an output of the low pass filter arrangement; electrically coupling an output of the band stop filter to a transmitter coil associated with the battery through inductive coupling with a receiver coil; and using the low pass filter arrangement and the band stop filter to transform a load impedance associated with the transmitter coil to produce a current at the an input of the transmitter coil that is substantially constant in response to changes in the load impedance. 15. The method of claim 14, wherein the battery is associated with the transmitter coil through inductive coupling between the transmitter coil and the receiver coil and presented as a load resistance associated with the transmitter coil. 16. The method of claim 14, wherein the low pass filter arrangement and the band stop filter are configured to transform a load impedance associated with the transmitter coil to match the load impedance associated with the transmitter coil with the impedance of the power amplifier when delivering desired power to the battery under charge. 17. The method of claim 14, wherein the low pass filter arrangement comprises a first stage low pass filter series connected to a second stage low pass filter. 18. The method of claim 17, wherein the first stage low pass filter comprises a first inductor and a first capacitor, and the second stage low pass filter comprises a second inductor and a second capacitor. 19. The method of claim 14, wherein the power amplifier has an output impedance R, the resistive load having an input impedance RL, the method further comprising using the low pass filter arrangement to provide an output voltage with a phase shift of φ/2, wherein:
φ=π−arctan((R L R−R 2)1/2/(R L−2R)). 20. The method of claim 19, further comprising using the low pass filter arrangement are configured to transform the power amplifier output impedance R to match the resistive load impedance RL. 21. The method of claim 14 wherein the low pass filter arrangement and the band stop filter are configured to filter out harmonics of the current produced at the output of the power amplifier. 22. The method of claim 14, wherein the second stage low pass filter are configured to interconnect the first stage low pass filter series and the band stop filter. 23. A device for wirelessly charging a battery, comprising:
a power amplifier and a transmitter coil associated with the battery, the transmitter coil to generate a magnetic field for wirelessly charging a battery; and a filtering circuit electrically connected to an output of the power amplifier and comprising an output electrically connected to the transmitter coil associated with the battery through inductive coupling with a receiver coil; wherein the filtering circuit comprises a series combination of a band stop filter, a first stage low pass filter, and a second stage low pass filter, the series combination of the band stop filter, the first stage low pass filter, and the second stage low pass filter to transform a load impedance associated with the transmitter coil to produce a current at the output of the power amplifier that is substantially constant in response to changes in the load impedance. 24. The device of claim 23, wherein the battery is associated with the transmitter coil through inductive coupling between the transmitter coil and the receiver coil and presented as a load resistance associated with the transmitter coil. 25. The device of claim 23, wherein the series combination of the band stop filter, the first stage low pass filter, and the second stage low pass filter are configured to transform a load impedance associated with the transmitter coil to match the load impedance associated with the transmitter coil with the impedance of the power amplifier when delivering desired power to the battery under charge. | 2,800 |
11,674 | 11,674 | 15,637,835 | 2,847 | An automated assembly sensor cable has a generally wide and flat elongated body and a registration feature generally traversing the length of the body so as to identify the relative locations of conductors within the body. This cable configuration facilitates the automated attachment of the cable to an optical sensor circuit and corresponding connector. In various embodiments, the automated assembly sensor cable has a conductor set of insulated wires, a conductive inner jacket generally surrounding the conductor set, an outer jacket generally surrounding the inner jacket and a registration feature disposed along the surface of the outer jacket and a conductive drain line is embedded within the inner jacket. A strength member may be embedded within the inner jacket. | 1.-20. (canceled) 21. An automated assembly sensor cable including a generally flat and wide body, the automated assembly sensor cable comprising:
an emitter wire; a drain line; a detector wire, wherein the drain line is arranged between the emitter wire and the detector wire; and a machine readable registration feature configured to facilitate automatic location and attachment of the emitter wire to an emitter connector. 22. The automated assembly sensor cable according to claim 21 wherein the emitter wire and the drain line are linearly arranged and regular spaced. 23. The automated assembly sensor cable according to claim 22 wherein the registration feature comprises a machine-readable groove running a length of the sensor cable. 24. The automated assembly sensor cable according to claim 23, further comprising an outer jacket and an inner jacket, wherein the outer jacket and inner jacket are semi-pressure co-extruded PVC. 25. The automated assembly sensor cable according to claim 24 wherein the emitter wire is configured to transmit drive currents to sensor LEDs and the detector wire is configured to receive currents from sensor photodiodes. 26. The automated assembly sensor cable according to claim 25 wherein the regular spacing is 0.050 inches. 27. The automated assembly sensor cable according to claim 26 further comprising a strength member embedded within the inner jacket. 28. The automated assembly sensor cable according to claim 27 wherein the strength member is a high-strength cord of Kevlar strands. 29. The automated assembly sensor cable according to claim 26 wherein the outer jacket incorporates Kevlar fibers for strength 30. A sensor cable automated assembly method of a cable including a generally flat and wide body, the sensor cable automated assembly comprising:
providing a cable comprising an emitter wire, a drain line, and a detector wire, wherein the drain line is arranged between the emitter wire and the detector wire; detecting a registration feature disposed along a length of the cable relative to a location of at least the emitter wire or the detector wire within the cable; and positioning the emitter wire relative to a plurality of contacts of an optical sensor circuit according to the registration feature. | An automated assembly sensor cable has a generally wide and flat elongated body and a registration feature generally traversing the length of the body so as to identify the relative locations of conductors within the body. This cable configuration facilitates the automated attachment of the cable to an optical sensor circuit and corresponding connector. In various embodiments, the automated assembly sensor cable has a conductor set of insulated wires, a conductive inner jacket generally surrounding the conductor set, an outer jacket generally surrounding the inner jacket and a registration feature disposed along the surface of the outer jacket and a conductive drain line is embedded within the inner jacket. A strength member may be embedded within the inner jacket.1.-20. (canceled) 21. An automated assembly sensor cable including a generally flat and wide body, the automated assembly sensor cable comprising:
an emitter wire; a drain line; a detector wire, wherein the drain line is arranged between the emitter wire and the detector wire; and a machine readable registration feature configured to facilitate automatic location and attachment of the emitter wire to an emitter connector. 22. The automated assembly sensor cable according to claim 21 wherein the emitter wire and the drain line are linearly arranged and regular spaced. 23. The automated assembly sensor cable according to claim 22 wherein the registration feature comprises a machine-readable groove running a length of the sensor cable. 24. The automated assembly sensor cable according to claim 23, further comprising an outer jacket and an inner jacket, wherein the outer jacket and inner jacket are semi-pressure co-extruded PVC. 25. The automated assembly sensor cable according to claim 24 wherein the emitter wire is configured to transmit drive currents to sensor LEDs and the detector wire is configured to receive currents from sensor photodiodes. 26. The automated assembly sensor cable according to claim 25 wherein the regular spacing is 0.050 inches. 27. The automated assembly sensor cable according to claim 26 further comprising a strength member embedded within the inner jacket. 28. The automated assembly sensor cable according to claim 27 wherein the strength member is a high-strength cord of Kevlar strands. 29. The automated assembly sensor cable according to claim 26 wherein the outer jacket incorporates Kevlar fibers for strength 30. A sensor cable automated assembly method of a cable including a generally flat and wide body, the sensor cable automated assembly comprising:
providing a cable comprising an emitter wire, a drain line, and a detector wire, wherein the drain line is arranged between the emitter wire and the detector wire; detecting a registration feature disposed along a length of the cable relative to a location of at least the emitter wire or the detector wire within the cable; and positioning the emitter wire relative to a plurality of contacts of an optical sensor circuit according to the registration feature. | 2,800 |
11,675 | 11,675 | 13,646,758 | 2,884 | The present disclosure discloses rare earth metal halide scintillators compositions with reduced hygroscopicity. Compositions in specific implementations include three group of elements: Lanthanides, (La, Ce, Lu, Gd or V), elements in group 17 of the periodic table of elements (CI, Br and I) and elements of group 13 (B, AI, Ga, In, TI), and any combination of these elements. Examples of methods for making the compositions are also disclosed. | 1. A scintillator material, comprising:
a rare-earth metal halide; and a group-13 element. 2. The scintillator material of claim 1, wherein the group-13 element comprises thallium (Tl). 3. The scintillator material of claim 1, wherein the rare-earth metal halide comprises LaBr3, LaCl3, CeBr3, CeCl3, LuI3 or a combination thereof. 4. The scintillator material of claim 2, wherein the rare-earth metal halide comprises LaBr3, LaCl3, CeBr3, CeCl3 or LuI3 or a combination thereof. 5. The scintillator material of claim 4, wherein the rare-earth metal halide comprises LaBr3, the first rare-earth element comprises cerium (Ce). 6. The scintillator material of claim 1, wherein the rare-earth metal halide comprises at least two rare-earth metal elements. 7. The scintillator material of claim 2, wherein the rare-earth metal halide comprises at least two rare-earth metal elements. 8. The scintillator material of claim 1, wherein the rare-earth metal halide defines a crystal lattice have a symmetry that is substantially the same as the metal halide without the group-13 element. 9. The scintillator material of claim 8, wherein the rare-earth metal halide defines a crystal lattice have a symmetry that is substantially different from the metal halide without the group-13 element. 10. The scintillator material of claim 9, being an admixture or solid solution of the metal halide and a halide of the group-13 element. 11. The scintillator material of claim 10, being an admixture or solid solution of a rare-earth metal halide and Tl halide. 12. The scintillator material of claim 1, the scintillator material being a single crystal. 13. A method of making a scintillation material, comprising:
making a melt by heating a mixture of:
a rare-earth metal halide, and
a salt of a group-13 element; and
growing a single crystal from the melt. 14. A radiation detector, comprising:
a scintillator material of claim 1 adapted to generate photons in response to an impinging radiation; and a photon detector optically coupled to the scintillator material, arranged to receive the photons generated by the scintillator material and adapted to generate an electrical signal indicative of the photon generation. 15. An imaging method, comprising:
using at least one radiation detector of claim 14 to receive radiation from a plurality of radiation sources distributed in an object to be imaged and generate a plurality of signals indicative of the received radiation; and based on the plurality of signals, deriving a special distribution of an attribute of the object. | The present disclosure discloses rare earth metal halide scintillators compositions with reduced hygroscopicity. Compositions in specific implementations include three group of elements: Lanthanides, (La, Ce, Lu, Gd or V), elements in group 17 of the periodic table of elements (CI, Br and I) and elements of group 13 (B, AI, Ga, In, TI), and any combination of these elements. Examples of methods for making the compositions are also disclosed.1. A scintillator material, comprising:
a rare-earth metal halide; and a group-13 element. 2. The scintillator material of claim 1, wherein the group-13 element comprises thallium (Tl). 3. The scintillator material of claim 1, wherein the rare-earth metal halide comprises LaBr3, LaCl3, CeBr3, CeCl3, LuI3 or a combination thereof. 4. The scintillator material of claim 2, wherein the rare-earth metal halide comprises LaBr3, LaCl3, CeBr3, CeCl3 or LuI3 or a combination thereof. 5. The scintillator material of claim 4, wherein the rare-earth metal halide comprises LaBr3, the first rare-earth element comprises cerium (Ce). 6. The scintillator material of claim 1, wherein the rare-earth metal halide comprises at least two rare-earth metal elements. 7. The scintillator material of claim 2, wherein the rare-earth metal halide comprises at least two rare-earth metal elements. 8. The scintillator material of claim 1, wherein the rare-earth metal halide defines a crystal lattice have a symmetry that is substantially the same as the metal halide without the group-13 element. 9. The scintillator material of claim 8, wherein the rare-earth metal halide defines a crystal lattice have a symmetry that is substantially different from the metal halide without the group-13 element. 10. The scintillator material of claim 9, being an admixture or solid solution of the metal halide and a halide of the group-13 element. 11. The scintillator material of claim 10, being an admixture or solid solution of a rare-earth metal halide and Tl halide. 12. The scintillator material of claim 1, the scintillator material being a single crystal. 13. A method of making a scintillation material, comprising:
making a melt by heating a mixture of:
a rare-earth metal halide, and
a salt of a group-13 element; and
growing a single crystal from the melt. 14. A radiation detector, comprising:
a scintillator material of claim 1 adapted to generate photons in response to an impinging radiation; and a photon detector optically coupled to the scintillator material, arranged to receive the photons generated by the scintillator material and adapted to generate an electrical signal indicative of the photon generation. 15. An imaging method, comprising:
using at least one radiation detector of claim 14 to receive radiation from a plurality of radiation sources distributed in an object to be imaged and generate a plurality of signals indicative of the received radiation; and based on the plurality of signals, deriving a special distribution of an attribute of the object. | 2,800 |
11,676 | 11,676 | 15,630,479 | 2,893 | Methods for seam-less gapfill comprising forming a flowable film by PECVD and curing the flowable film to solidify the film. The flowable film can be formed using a higher order silane and plasma. A UV cure, or other cure, can be used to solidify the flowable film. | 1. A processing method comprising:
providing a substrate surface having at least one feature thereon, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall; forming a flowable film on the substrate surface and the first sidewall, second sidewall and bottom surface of the at least one feature, the flowable film filling the feature with substantially no seam formed; and curing the flowable film to solidify the film and form a substantially seam-free gapfill. 2. The processing method of claim 1, wherein forming the flowable film is done by plasma-enhanced chemical vapor deposition (PECVD). 3. The processing method of claim 2, wherein the PECVD comprises a polysilicon precursor and a plasma comprising a plasma gas. 4. The processing method of claim 3, wherein the polysilicon precursor comprises one or more of disilane, trisilane, tetrasilane, neopentasilane or cyclohexasilane. 5. The processing method of claim 3, wherein the plasma gas comprises one or more of He, Ar, Kr, H2, N2, O2, O3 or NH3. 6. The processing method of claim 5, wherein the plasma has a power less than about 300 W. 7. The processing method of claim 5, wherein the plasma is a direct plasma. 8. The processing method of claim 1, wherein forming the flowable film occurs at a temperature less than about 100° C. 9. The processing method of claim 1, wherein curing the flowable film comprises a UV cure. 10. The processing method of claim 9, wherein the UV cure occurs at a temperature in the range of about 10° C. to about 550° C. 11. The processing method of claim 1, wherein curing the flowable film comprises exposing the flowable film to a plasma separate from the PECVD plasma and/or an electron beam. 12. The processing method of claim 3, wherein the flowable film comprises one or more of SiN, SiO, SiC, SiOC, SiON, SiCON. 13. The processing method of claim 12, wherein the PECVD further comprises one or more of propylene, acetylene, ammonia, oxygen, ozone or water. 14. The processing method of claim 3, wherein the flowable film comprises a metal silicide. 15. The processing method of claim 14, wherein the PECVD further comprises one or more tungsten, tantalum and/or nickel precursors. 16. The processing method of claim 1, wherein after curing the film of the gapfill has a hydrogen content less than about 10 atomic percent. 17. The method of claim 1, wherein the feature has an aspect ratio greater than or equal to 25:1. 18. A processing method comprising:
providing a substrate surface having at least one feature thereon, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall and an aspect ratio greater than or equal to about 25:1; forming a flowable silicon film by PECVD on the substrate surface and the first sidewall, second sidewall and bottom surface of the at least one feature, the flowable film filling the feature with substantially no seam formed; and curing the flowable film to solidify the film and form a substantially seam-free gapfill. 19. The processing method of claim 2, wherein the PECVD comprises a polysilicon precursor and a plasma comprising a plasma gas, the polysilicon precursor comprising one or more of disilane, trisilane, tetrasilane, neopentasilane or cyclohexasilane, the plasma gas comprises one or more of He, Ar, Kr, H2, N2, O2, O3 or NH3. 20. A processing method comprising:
providing a substrate surface having at least one feature thereon, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall and an aspect ratio greater than or equal to about 25:1; forming a flowable silicon film by a PECVD process on the substrate surface and the first sidewall, second sidewall and bottom surface of the at least one feature, the flowable film filling the feature with substantially no seam formed, the PECVD process comprises a polysilicon precursor and a plasma comprising a plasma gas, the polysilicon precursor comprising one or more of disilane, trisilane, tetrasilane, neopentasilane or cyclohexasilane, the plasma gas comprises one or more of He, Ar, Kr, H2, N2, O2, O3 or NH3, the plasma has a power less than or equal to about 200 W, and the PECVD process occurs at a temperature less or equal to about 100° C.; and exposing the flowable film to a UV cure to solidify the flowable film and form a substantially seam-free gapfill. | Methods for seam-less gapfill comprising forming a flowable film by PECVD and curing the flowable film to solidify the film. The flowable film can be formed using a higher order silane and plasma. A UV cure, or other cure, can be used to solidify the flowable film.1. A processing method comprising:
providing a substrate surface having at least one feature thereon, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall; forming a flowable film on the substrate surface and the first sidewall, second sidewall and bottom surface of the at least one feature, the flowable film filling the feature with substantially no seam formed; and curing the flowable film to solidify the film and form a substantially seam-free gapfill. 2. The processing method of claim 1, wherein forming the flowable film is done by plasma-enhanced chemical vapor deposition (PECVD). 3. The processing method of claim 2, wherein the PECVD comprises a polysilicon precursor and a plasma comprising a plasma gas. 4. The processing method of claim 3, wherein the polysilicon precursor comprises one or more of disilane, trisilane, tetrasilane, neopentasilane or cyclohexasilane. 5. The processing method of claim 3, wherein the plasma gas comprises one or more of He, Ar, Kr, H2, N2, O2, O3 or NH3. 6. The processing method of claim 5, wherein the plasma has a power less than about 300 W. 7. The processing method of claim 5, wherein the plasma is a direct plasma. 8. The processing method of claim 1, wherein forming the flowable film occurs at a temperature less than about 100° C. 9. The processing method of claim 1, wherein curing the flowable film comprises a UV cure. 10. The processing method of claim 9, wherein the UV cure occurs at a temperature in the range of about 10° C. to about 550° C. 11. The processing method of claim 1, wherein curing the flowable film comprises exposing the flowable film to a plasma separate from the PECVD plasma and/or an electron beam. 12. The processing method of claim 3, wherein the flowable film comprises one or more of SiN, SiO, SiC, SiOC, SiON, SiCON. 13. The processing method of claim 12, wherein the PECVD further comprises one or more of propylene, acetylene, ammonia, oxygen, ozone or water. 14. The processing method of claim 3, wherein the flowable film comprises a metal silicide. 15. The processing method of claim 14, wherein the PECVD further comprises one or more tungsten, tantalum and/or nickel precursors. 16. The processing method of claim 1, wherein after curing the film of the gapfill has a hydrogen content less than about 10 atomic percent. 17. The method of claim 1, wherein the feature has an aspect ratio greater than or equal to 25:1. 18. A processing method comprising:
providing a substrate surface having at least one feature thereon, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall and an aspect ratio greater than or equal to about 25:1; forming a flowable silicon film by PECVD on the substrate surface and the first sidewall, second sidewall and bottom surface of the at least one feature, the flowable film filling the feature with substantially no seam formed; and curing the flowable film to solidify the film and form a substantially seam-free gapfill. 19. The processing method of claim 2, wherein the PECVD comprises a polysilicon precursor and a plasma comprising a plasma gas, the polysilicon precursor comprising one or more of disilane, trisilane, tetrasilane, neopentasilane or cyclohexasilane, the plasma gas comprises one or more of He, Ar, Kr, H2, N2, O2, O3 or NH3. 20. A processing method comprising:
providing a substrate surface having at least one feature thereon, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall and an aspect ratio greater than or equal to about 25:1; forming a flowable silicon film by a PECVD process on the substrate surface and the first sidewall, second sidewall and bottom surface of the at least one feature, the flowable film filling the feature with substantially no seam formed, the PECVD process comprises a polysilicon precursor and a plasma comprising a plasma gas, the polysilicon precursor comprising one or more of disilane, trisilane, tetrasilane, neopentasilane or cyclohexasilane, the plasma gas comprises one or more of He, Ar, Kr, H2, N2, O2, O3 or NH3, the plasma has a power less than or equal to about 200 W, and the PECVD process occurs at a temperature less or equal to about 100° C.; and exposing the flowable film to a UV cure to solidify the flowable film and form a substantially seam-free gapfill. | 2,800 |
11,677 | 11,677 | 15,175,389 | 2,894 | A method of manufacturing a semiconductor device includes forming a seed layer containing a predetermined element on a substrate by performing a process a predetermined number of times, and supplying a second precursor containing the predetermined element and not containing the ligand to the substrate to form a film containing the predetermined element on the seed layer. The process includes alternately performing: supplying a first precursor to the substrate to form an adsorption layer of the first precursor, the first precursor containing the predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen, and supplying a ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor. | 1. A method of manufacturing a semiconductor device, comprising:
forming a seed layer containing a predetermined element on a substrate by performing a process a predetermined number of times, the process including alternately performing:
supplying a first precursor to the substrate to form an adsorption layer of the first precursor, the first precursor containing the predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen, and
supplying a ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor; and
supplying a second precursor containing the predetermined element and not containing the ligand to the substrate to form a film containing the predetermined element on the seed layer. 2. The method of claim 1, wherein a pressure at a space where the substrate is located in the act of supplying the first precursor is set higher than a pressure at a space where the substrate is located in the act of supplying the ligand desorption material. 3. The method of claim 1, wherein a pressure at a space where the substrate is located in the act of supplying the first precursor is set higher than a pressure at a space where the substrate is located in the act of supplying the second precursor. 4. The method of claim 1, wherein a supply flow rate of the first precursor in the act of supplying the first precursor is set higher than an exhaust flow rate of the first precursor exhausted from a space where the substrate is located in the act of supplying the first precursor. 5. The method of claim 1, wherein in the act of supplying the first precursor, the first precursor is exhausted from a space where the substrate is located while supplying the first precursor into the space, and at this time, a supply flow rate of the first precursor supplied into the space is set higher than an exhaust flow rate of the first precursor exhausted from the space. 6. The method of claim 1, wherein in the act of supplying the first precursor, an exhaust of the first precursor from a space where the substrate is located is stopped. 7. The method of claim 1, wherein the ligand desorption material includes a reducing gas. 8. The method of claim 1, wherein the ligand desorption material includes a plasma-excited reducing gas. 9. The method of claim 1, wherein the ligand desorption material includes a non-plasma-excited reducing gas. 10. The method of claim 1, wherein the ligand desorption material includes a plasma-excited gas. 11. The method of claim 1, wherein the ligand desorption material includes a plasma-excited hydrogen-containing gas. 12. The method of claim 1, wherein the ligand desorption material includes a plasma-excited inert gas. 13. The method of claim 1, wherein the ligand desorption material includes a plasma-excited inert gas and a non-plasma-excited reducing gas. 14. The method of claim 1, wherein the ligand desorption material includes a halogen-element-containing gas. 15. The method of claim 1, wherein the act of supplying the first precursor is performed under a condition in which the first precursor is not pyrolyzed, and the act of supplying the second precursor is performed under a condition in which the second precursor is pyrolyzed. 16. The method of claim 1, wherein an insulation film is formed on a surface of the substrate, and the seed layer is formed on the insulation film. 17. A substrate processing apparatus, comprising:
a process chamber configured to accommodate a substrate; a first supply system configured to supply a first precursor to the substrate in the process chamber, the first precursor containing a predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen; a second supply system configured to supply a second precursor containing the predetermined element and not containing the ligand to the substrate in the process chamber; a third supply system configured to supply a ligand desorption material to the substrate in the process chamber; and a control part configured to control the first supply system, the second supply system, and the third supply system to perform in the process chamber: forming a seed layer containing the predetermined element on the substrate by performing a process a predetermined number of times, the process including alternately performing:
supplying the first precursor to the substrate to form an adsorption layer of the first precursor, and
supplying the ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor; and
supplying the second precursor to the substrate to form a film containing the predetermined element on the seed layer. 18. A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process, the process comprising:
forming a seed layer containing a predetermined element on a substrate by performing a sequence a predetermined number of times, the sequence including alternately performing:
supplying a first precursor to the substrate to form an adsorption layer of the first precursor, the first precursor containing the predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen, and
supplying a ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor; and
supplying a second precursor containing the predetermined element and not containing the ligand to the substrate to form a film containing the predetermined element on the seed layer. | A method of manufacturing a semiconductor device includes forming a seed layer containing a predetermined element on a substrate by performing a process a predetermined number of times, and supplying a second precursor containing the predetermined element and not containing the ligand to the substrate to form a film containing the predetermined element on the seed layer. The process includes alternately performing: supplying a first precursor to the substrate to form an adsorption layer of the first precursor, the first precursor containing the predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen, and supplying a ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor.1. A method of manufacturing a semiconductor device, comprising:
forming a seed layer containing a predetermined element on a substrate by performing a process a predetermined number of times, the process including alternately performing:
supplying a first precursor to the substrate to form an adsorption layer of the first precursor, the first precursor containing the predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen, and
supplying a ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor; and
supplying a second precursor containing the predetermined element and not containing the ligand to the substrate to form a film containing the predetermined element on the seed layer. 2. The method of claim 1, wherein a pressure at a space where the substrate is located in the act of supplying the first precursor is set higher than a pressure at a space where the substrate is located in the act of supplying the ligand desorption material. 3. The method of claim 1, wherein a pressure at a space where the substrate is located in the act of supplying the first precursor is set higher than a pressure at a space where the substrate is located in the act of supplying the second precursor. 4. The method of claim 1, wherein a supply flow rate of the first precursor in the act of supplying the first precursor is set higher than an exhaust flow rate of the first precursor exhausted from a space where the substrate is located in the act of supplying the first precursor. 5. The method of claim 1, wherein in the act of supplying the first precursor, the first precursor is exhausted from a space where the substrate is located while supplying the first precursor into the space, and at this time, a supply flow rate of the first precursor supplied into the space is set higher than an exhaust flow rate of the first precursor exhausted from the space. 6. The method of claim 1, wherein in the act of supplying the first precursor, an exhaust of the first precursor from a space where the substrate is located is stopped. 7. The method of claim 1, wherein the ligand desorption material includes a reducing gas. 8. The method of claim 1, wherein the ligand desorption material includes a plasma-excited reducing gas. 9. The method of claim 1, wherein the ligand desorption material includes a non-plasma-excited reducing gas. 10. The method of claim 1, wherein the ligand desorption material includes a plasma-excited gas. 11. The method of claim 1, wherein the ligand desorption material includes a plasma-excited hydrogen-containing gas. 12. The method of claim 1, wherein the ligand desorption material includes a plasma-excited inert gas. 13. The method of claim 1, wherein the ligand desorption material includes a plasma-excited inert gas and a non-plasma-excited reducing gas. 14. The method of claim 1, wherein the ligand desorption material includes a halogen-element-containing gas. 15. The method of claim 1, wherein the act of supplying the first precursor is performed under a condition in which the first precursor is not pyrolyzed, and the act of supplying the second precursor is performed under a condition in which the second precursor is pyrolyzed. 16. The method of claim 1, wherein an insulation film is formed on a surface of the substrate, and the seed layer is formed on the insulation film. 17. A substrate processing apparatus, comprising:
a process chamber configured to accommodate a substrate; a first supply system configured to supply a first precursor to the substrate in the process chamber, the first precursor containing a predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen; a second supply system configured to supply a second precursor containing the predetermined element and not containing the ligand to the substrate in the process chamber; a third supply system configured to supply a ligand desorption material to the substrate in the process chamber; and a control part configured to control the first supply system, the second supply system, and the third supply system to perform in the process chamber: forming a seed layer containing the predetermined element on the substrate by performing a process a predetermined number of times, the process including alternately performing:
supplying the first precursor to the substrate to form an adsorption layer of the first precursor, and
supplying the ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor; and
supplying the second precursor to the substrate to form a film containing the predetermined element on the seed layer. 18. A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process, the process comprising:
forming a seed layer containing a predetermined element on a substrate by performing a sequence a predetermined number of times, the sequence including alternately performing:
supplying a first precursor to the substrate to form an adsorption layer of the first precursor, the first precursor containing the predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen, and
supplying a ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor; and
supplying a second precursor containing the predetermined element and not containing the ligand to the substrate to form a film containing the predetermined element on the seed layer. | 2,800 |
11,678 | 11,678 | 15,120,529 | 2,871 | An optical device ( 34, 66, 76 ) includes an electro-optical layer ( 48 ), having an effective local index of refraction at any given location within an active area of the electro-optical layer that is determined by a voltage waveform applied across the electro-optical layer at the location. Conductive electrodes ( 44, 64, 74, 82, 84 ) extend over opposing first and second sides of the electro-optical layer. The electrodes include an array of excitation electrodes, which extend along respective, mutually-parallel axes in a predefined direction across the first side of the electro-optical layer, and which includes at least first and second electrodes having different, respective widths in a transverse direction, perpendicular to the axes. Control circuitry ( 38 ) is coupled to apply respective control voltage waveforms to the excitation electrodes so as to generate a specified phase modulation profile in the electro-optical layer. | 1. An optical device, comprising:
an electro-optical layer, having an effective local index of refraction at any given location within an active area of the electro-optical layer that is determined by a voltage waveform applied across the electro-optical layer at the location; conductive electrodes extending over opposing first and second sides of the electro-optical layer, the electrodes comprising an array of excitation electrodes, which extend along respective, mutually-parallel axes in a predefined direction across the first side of the electro-optical layer, and which comprises at least first and second electrodes having different, respective widths in a transverse direction, perpendicular to the axes; and control circuitry, which is coupled to apply respective control voltage waveforms to the excitation electrodes and to modify the control voltages applied to each of the excitation electrodes concurrently and independently so as to generate a specified phase modulation profile in the electro-optical layer. 2. The device according to claim 1, wherein the respective widths of the electrodes differ from one another with a standard variation that is at least 10% of a mean width of all the electrodes. 3. The device according to claim 1, wherein the respective widths of at least some of the electrodes vary along the respective axes of the electrodes. 4. The device according to claim 1, wherein the array of excitation electrodes comprises a first array of first excitation electrodes, extending in a first direction across the first side of the electro-optical layer, and
wherein the conductive electrodes comprises a second array of second excitation electrodes, which extend in a second direction, perpendicular to the first direction, across the second side of the electro-optical layer, and which comprises at least third and fourth electrodes having different, respective widths. 5. The device according to claim 1, wherein the conductive electrodes comprise a common electrode, positioned over the active area on the second side of the electro-optical layer. 6. Apparatus comprising first and second optical devices according to claim 5, wherein the first and second optical devices are arranged in series, and wherein the excitation electrodes in the second optical device are oriented in a direction orthogonal to the excitation electrodes in the first optical device. 7. The apparatus according to claim 6, wherein the first and second optical devices comprise respective, first and second electro-optical layers that are polarization-dependent and are arranged such that the first optical device modulates light in a first polarization, while the second optical device modulates the light in a second polarization, different from the first polarization, and wherein the apparatus comprises a polarization rotator positioned between the first and second optical devices so as to rotate the light from the first polarization to the second polarization. 8. The device according to claim 1, wherein the first and second electrodes have respective first and second widths, such that the first width is at least twice the second width, and wherein the control circuitry is configured to apply the respective control voltage waveforms so that the specified phase modulation profile has an abrupt transition that occurs in a vicinity of at least one of the second electrodes. 9. The device according to claim 8, wherein generation of the specified phase modulation profile causes the device to function as a Fresnel lens. 10. The device according to claim 8, wherein the electrodes comprise parallel stripes of a transparent conductive material having gaps between the stripes of a predefined gap width, and wherein the second width of the second electrodes is no greater than four times the gap width. 11. The device according to claim 8, wherein the second width of the second electrodes is less than a layer thickness of the electro-optical layer. 12. The device according to claim 8, wherein the phase modulation profile has multiple abrupt transitions that occur in respective vicinities of corresponding ones of the second electrodes, and
wherein the electro-optical layer is configured to provide a range of phase modulation values that is proportional to a relation between a density of the second electrodes relative to a spacing between the abrupt transitions in the phase modulation function. 13. The device according to claim 1, wherein the electro-optical layer comprises a liquid crystal. 14. An optical device, comprising:
an electro-optical layer, having an effective local index of refraction at any given location within an active area of the electro-optical layer that is determined by a voltage waveform applied across the electro-optical layer at the location, the electro-optical layer having opposing first and second sides and a layer thickness equal to a distance between the first and second sides; conductive electrodes extending over the first and second sides of the electro-optical layer, the electrodes comprising an array of excitation electrodes comprising parallel stripes of a transparent conductive material having gaps between the stripes of a gap width that is no greater than 2 μm and is less than the layer thickness of the electro-optical layer; and control circuitry, which is coupled to apply respective control voltage waveforms to the excitation electrodes so as to generate a specified phase modulation profile in the electro-optical layer. 15. The device according to claim 14, wherein the gap width is less than half the layer thickness. 16. The device according to claim 14, wherein the electro-optical layer comprises a liquid crystal. 17-30. (canceled) 31. A method for producing an optical device, the method comprising:
providing an electro-optical layer, having an effective local index of refraction at any given location within an active area of the electro-optical layer that is determined by a voltage waveform applied across the electro-optical layer at the location; positioning conductive electrodes over opposing first and second sides of the electro-optical layer, the electrodes comprising an array of excitation electrodes, which extend along respective, mutually-parallel axes in a predefined direction across the first side of the electro-optical layer, and which comprises at least first and second electrodes having different, respective widths in a transverse direction, perpendicular to the axes; and coupling control circuitry to apply respective control voltage waveforms to the excitation electrodes and to modify the control voltages applied to each of the excitation electrodes concurrently and independently so as to generate a specified phase modulation profile in the electro-optical layer. 32. The method according to claim 31, wherein the respective widths of the electrodes differ from one another with a standard variation that is at least 10% of a mean width of all the electrodes. 33. The method according to claim 31, wherein the respective widths of at least some of the electrodes vary along the respective axes of the electrodes. 34. The method according to claim 31, wherein the array of excitation electrodes comprises a first array of first excitation electrodes, extending in a first direction across the first side of the electro-optical layer, and
wherein positioning the conductive electrodes comprises positioning a second array of second excitation electrodes to extend in a second direction, perpendicular to the first direction, across the second side of the electro-optical layer, and wherein the second array comprises at least third and fourth electrodes having different, respective widths. 35-74. (canceled) | An optical device ( 34, 66, 76 ) includes an electro-optical layer ( 48 ), having an effective local index of refraction at any given location within an active area of the electro-optical layer that is determined by a voltage waveform applied across the electro-optical layer at the location. Conductive electrodes ( 44, 64, 74, 82, 84 ) extend over opposing first and second sides of the electro-optical layer. The electrodes include an array of excitation electrodes, which extend along respective, mutually-parallel axes in a predefined direction across the first side of the electro-optical layer, and which includes at least first and second electrodes having different, respective widths in a transverse direction, perpendicular to the axes. Control circuitry ( 38 ) is coupled to apply respective control voltage waveforms to the excitation electrodes so as to generate a specified phase modulation profile in the electro-optical layer.1. An optical device, comprising:
an electro-optical layer, having an effective local index of refraction at any given location within an active area of the electro-optical layer that is determined by a voltage waveform applied across the electro-optical layer at the location; conductive electrodes extending over opposing first and second sides of the electro-optical layer, the electrodes comprising an array of excitation electrodes, which extend along respective, mutually-parallel axes in a predefined direction across the first side of the electro-optical layer, and which comprises at least first and second electrodes having different, respective widths in a transverse direction, perpendicular to the axes; and control circuitry, which is coupled to apply respective control voltage waveforms to the excitation electrodes and to modify the control voltages applied to each of the excitation electrodes concurrently and independently so as to generate a specified phase modulation profile in the electro-optical layer. 2. The device according to claim 1, wherein the respective widths of the electrodes differ from one another with a standard variation that is at least 10% of a mean width of all the electrodes. 3. The device according to claim 1, wherein the respective widths of at least some of the electrodes vary along the respective axes of the electrodes. 4. The device according to claim 1, wherein the array of excitation electrodes comprises a first array of first excitation electrodes, extending in a first direction across the first side of the electro-optical layer, and
wherein the conductive electrodes comprises a second array of second excitation electrodes, which extend in a second direction, perpendicular to the first direction, across the second side of the electro-optical layer, and which comprises at least third and fourth electrodes having different, respective widths. 5. The device according to claim 1, wherein the conductive electrodes comprise a common electrode, positioned over the active area on the second side of the electro-optical layer. 6. Apparatus comprising first and second optical devices according to claim 5, wherein the first and second optical devices are arranged in series, and wherein the excitation electrodes in the second optical device are oriented in a direction orthogonal to the excitation electrodes in the first optical device. 7. The apparatus according to claim 6, wherein the first and second optical devices comprise respective, first and second electro-optical layers that are polarization-dependent and are arranged such that the first optical device modulates light in a first polarization, while the second optical device modulates the light in a second polarization, different from the first polarization, and wherein the apparatus comprises a polarization rotator positioned between the first and second optical devices so as to rotate the light from the first polarization to the second polarization. 8. The device according to claim 1, wherein the first and second electrodes have respective first and second widths, such that the first width is at least twice the second width, and wherein the control circuitry is configured to apply the respective control voltage waveforms so that the specified phase modulation profile has an abrupt transition that occurs in a vicinity of at least one of the second electrodes. 9. The device according to claim 8, wherein generation of the specified phase modulation profile causes the device to function as a Fresnel lens. 10. The device according to claim 8, wherein the electrodes comprise parallel stripes of a transparent conductive material having gaps between the stripes of a predefined gap width, and wherein the second width of the second electrodes is no greater than four times the gap width. 11. The device according to claim 8, wherein the second width of the second electrodes is less than a layer thickness of the electro-optical layer. 12. The device according to claim 8, wherein the phase modulation profile has multiple abrupt transitions that occur in respective vicinities of corresponding ones of the second electrodes, and
wherein the electro-optical layer is configured to provide a range of phase modulation values that is proportional to a relation between a density of the second electrodes relative to a spacing between the abrupt transitions in the phase modulation function. 13. The device according to claim 1, wherein the electro-optical layer comprises a liquid crystal. 14. An optical device, comprising:
an electro-optical layer, having an effective local index of refraction at any given location within an active area of the electro-optical layer that is determined by a voltage waveform applied across the electro-optical layer at the location, the electro-optical layer having opposing first and second sides and a layer thickness equal to a distance between the first and second sides; conductive electrodes extending over the first and second sides of the electro-optical layer, the electrodes comprising an array of excitation electrodes comprising parallel stripes of a transparent conductive material having gaps between the stripes of a gap width that is no greater than 2 μm and is less than the layer thickness of the electro-optical layer; and control circuitry, which is coupled to apply respective control voltage waveforms to the excitation electrodes so as to generate a specified phase modulation profile in the electro-optical layer. 15. The device according to claim 14, wherein the gap width is less than half the layer thickness. 16. The device according to claim 14, wherein the electro-optical layer comprises a liquid crystal. 17-30. (canceled) 31. A method for producing an optical device, the method comprising:
providing an electro-optical layer, having an effective local index of refraction at any given location within an active area of the electro-optical layer that is determined by a voltage waveform applied across the electro-optical layer at the location; positioning conductive electrodes over opposing first and second sides of the electro-optical layer, the electrodes comprising an array of excitation electrodes, which extend along respective, mutually-parallel axes in a predefined direction across the first side of the electro-optical layer, and which comprises at least first and second electrodes having different, respective widths in a transverse direction, perpendicular to the axes; and coupling control circuitry to apply respective control voltage waveforms to the excitation electrodes and to modify the control voltages applied to each of the excitation electrodes concurrently and independently so as to generate a specified phase modulation profile in the electro-optical layer. 32. The method according to claim 31, wherein the respective widths of the electrodes differ from one another with a standard variation that is at least 10% of a mean width of all the electrodes. 33. The method according to claim 31, wherein the respective widths of at least some of the electrodes vary along the respective axes of the electrodes. 34. The method according to claim 31, wherein the array of excitation electrodes comprises a first array of first excitation electrodes, extending in a first direction across the first side of the electro-optical layer, and
wherein positioning the conductive electrodes comprises positioning a second array of second excitation electrodes to extend in a second direction, perpendicular to the first direction, across the second side of the electro-optical layer, and wherein the second array comprises at least third and fourth electrodes having different, respective widths. 35-74. (canceled) | 2,800 |
11,679 | 11,679 | 15,709,588 | 2,845 | Polarization current antennas include an arc-shaped dielectric radiator, electrodes, and a feed network. The electrodes and feed network are configured to generate an electric field within the dielectric radiator. The electrodes are positioned on the top and bottom of the dielectric radiator and the electromagnetic radiation is emitted through the outer surface thereof. Phase differences between excitation signals supplied to the electrodes may be selected so that a speed of a volume polarization distribution current pattern that is generated in the dielectric radiator will be substantially equal to the speed of light within the dielectric radiator. The antenna emits both conventional spherically decaying electromagnetic radiation and as non-spherically decaying electromagnetic radiation that decays as a function of distance d at a rate that is less than 1/d 2 . The non-spherically decaying radiation includes a highly focused beam that has an angular beamwidth that narrows as the distance d increases. | 1-58. (canceled) 59. A method of operating a polarization current antenna having an arc-shaped dielectric radiator that is configured to emit electromagnetic radiation into an equatorial plane defined by a radius of the arc-shaped dielectric radiator, the method comprising:
generating a polarization current wave in the arc-shaped dielectric radiator, where the polarization current antenna is configured so that the polarization current wave will have a pre-selected speed at the outer radius of the arc-shaped dielectric radiator, where the pre-selected speed is selected so that a beam of non-spherically decaying electromagnetic radiation that is generated by the polarization current wave has a pre-selected angular elevation beamwidth. 60. The polarization current antenna of claim 59, wherein the pre-selected speed of the polarization current wave at the outer radius of the arc-shaped dielectric radiator is between the speed of light in vacuo and 1.2 times the speed of light in vacuo. 61. The polarization current antenna of claim 59, wherein the pre-selected speed of the polarization current wave at the outer radius of the arc-shaped dielectric radiator is between the speed of light in vacuo and 1.02 times the speed of light in vacuo. 62-79. (canceled) 80. A cellular base station, comprising:
a first polarization current antenna; and a second polarization current antenna, wherein the first polarization current antenna is configured to emit first non-spherically decaying radiation into a first range of elevation angles and the second polarization current antenna is configured to emit second non-spherically decaying radiation into a second range of elevation angles that is different from the first range of elevation angles. 81. The cellular base station of claim 80, wherein the first and second polarization current antennas are configured to emit the respective first and second non-spherically decaying radiation into a full 360 degrees in the azimuth plane to provide omnidirectional coverage in the azimuth plane. 82. The cellular base station of claim 80, wherein both the first and second polarization current antennas include arc-shaped dielectric radiators that define respective arcs that lie in respective horizontal planes, and wherein the first and second ranges of elevation angles are each a range of elevation angles that is above the horizontal plane. 83. The cellular base station of claim 80, wherein the first range of elevation angles does not overlap the second range of elevation angles. 84. The cellular base station of claim 80, wherein the first range of elevation angles is smaller than the second range of elevation angles. 85. The cellular base station of claim 80, wherein the first range of elevation angles overlaps the second range of elevation angles, and wherein the first polarization current antenna is configured to receive input signals within a first frequency range and the second polarization current antenna is configured to receive input signals within a second frequency range that does not overlap with the first frequency range. 86. The cellular base station of claim 80, wherein each of the first and second ranges of elevation angles is a range that is less than 5 degrees. 87. The cellular base station of claim 80, wherein each of the first and second ranges of elevation angles is a range that is less than 2 degrees. 88. The cellular base station of claim 80, further comprising a third polarization current antenna that is configured to emit third non-spherically decaying radiation into a third range of elevation angles. 89. The cellular base station of claim 88, wherein the first range of elevation angles overlaps the second range of elevation angles, and wherein the first polarization current antenna is configured to receive input signals within a first frequency range and the second polarization current antenna is configured to receive input signals within a second frequency range that does not overlap with the first frequency range. 90. The cellular base station of claim 89, wherein the third range of elevation angles overlaps the second range of elevation angles, and wherein the third polarization current antenna is configured to receive input signals within the first frequency range. 91. A method of operating a polarization current antenna that has an arc-shaped dielectric radiator, the method comprising:
applying an electric field to the arc-shaped dielectric radiator that generates a polarization current wave within the arc-shaped dielectric radiator, wherein the speed of the polarization current wave is greater than c along both an inner radius of the arc-shaped dielectric radiator and along an outer radius of the arc-shaped dielectric radiator, where c is the speed of light in vacuum, wherein the arc-shaped dielectric radiator includes a top surface, a bottom surface that is opposite the top surface, an inner surface, and an outer surface that is opposite the inner surface, the outer surface being longer than the inner surface, wherein the polarization current antenna further includes a plurality of electrodes that are mounted on the top surface of the arc-shaped dielectric radiator, and wherein electromagnetic radiation generated by the polarization current wave is emitted through the outer surface of the arc-shaped dielectric radiator. 92. The method of claim 91, wherein the polarization current antenna is configured so that the polarization current wave will have a first pre-selected speed at the inner radius of the arc-shaped dielectric radiator and a second pre-selected speed at the outer radius of the arc-shaped dielectric radiator, where the first and second pre-selected speeds are selected so that a beam of non-spherically decaying electromagnetic radiation that is generated by the polarization current wave has a pre-selected angular elevation beamwidth. | Polarization current antennas include an arc-shaped dielectric radiator, electrodes, and a feed network. The electrodes and feed network are configured to generate an electric field within the dielectric radiator. The electrodes are positioned on the top and bottom of the dielectric radiator and the electromagnetic radiation is emitted through the outer surface thereof. Phase differences between excitation signals supplied to the electrodes may be selected so that a speed of a volume polarization distribution current pattern that is generated in the dielectric radiator will be substantially equal to the speed of light within the dielectric radiator. The antenna emits both conventional spherically decaying electromagnetic radiation and as non-spherically decaying electromagnetic radiation that decays as a function of distance d at a rate that is less than 1/d 2 . The non-spherically decaying radiation includes a highly focused beam that has an angular beamwidth that narrows as the distance d increases.1-58. (canceled) 59. A method of operating a polarization current antenna having an arc-shaped dielectric radiator that is configured to emit electromagnetic radiation into an equatorial plane defined by a radius of the arc-shaped dielectric radiator, the method comprising:
generating a polarization current wave in the arc-shaped dielectric radiator, where the polarization current antenna is configured so that the polarization current wave will have a pre-selected speed at the outer radius of the arc-shaped dielectric radiator, where the pre-selected speed is selected so that a beam of non-spherically decaying electromagnetic radiation that is generated by the polarization current wave has a pre-selected angular elevation beamwidth. 60. The polarization current antenna of claim 59, wherein the pre-selected speed of the polarization current wave at the outer radius of the arc-shaped dielectric radiator is between the speed of light in vacuo and 1.2 times the speed of light in vacuo. 61. The polarization current antenna of claim 59, wherein the pre-selected speed of the polarization current wave at the outer radius of the arc-shaped dielectric radiator is between the speed of light in vacuo and 1.02 times the speed of light in vacuo. 62-79. (canceled) 80. A cellular base station, comprising:
a first polarization current antenna; and a second polarization current antenna, wherein the first polarization current antenna is configured to emit first non-spherically decaying radiation into a first range of elevation angles and the second polarization current antenna is configured to emit second non-spherically decaying radiation into a second range of elevation angles that is different from the first range of elevation angles. 81. The cellular base station of claim 80, wherein the first and second polarization current antennas are configured to emit the respective first and second non-spherically decaying radiation into a full 360 degrees in the azimuth plane to provide omnidirectional coverage in the azimuth plane. 82. The cellular base station of claim 80, wherein both the first and second polarization current antennas include arc-shaped dielectric radiators that define respective arcs that lie in respective horizontal planes, and wherein the first and second ranges of elevation angles are each a range of elevation angles that is above the horizontal plane. 83. The cellular base station of claim 80, wherein the first range of elevation angles does not overlap the second range of elevation angles. 84. The cellular base station of claim 80, wherein the first range of elevation angles is smaller than the second range of elevation angles. 85. The cellular base station of claim 80, wherein the first range of elevation angles overlaps the second range of elevation angles, and wherein the first polarization current antenna is configured to receive input signals within a first frequency range and the second polarization current antenna is configured to receive input signals within a second frequency range that does not overlap with the first frequency range. 86. The cellular base station of claim 80, wherein each of the first and second ranges of elevation angles is a range that is less than 5 degrees. 87. The cellular base station of claim 80, wherein each of the first and second ranges of elevation angles is a range that is less than 2 degrees. 88. The cellular base station of claim 80, further comprising a third polarization current antenna that is configured to emit third non-spherically decaying radiation into a third range of elevation angles. 89. The cellular base station of claim 88, wherein the first range of elevation angles overlaps the second range of elevation angles, and wherein the first polarization current antenna is configured to receive input signals within a first frequency range and the second polarization current antenna is configured to receive input signals within a second frequency range that does not overlap with the first frequency range. 90. The cellular base station of claim 89, wherein the third range of elevation angles overlaps the second range of elevation angles, and wherein the third polarization current antenna is configured to receive input signals within the first frequency range. 91. A method of operating a polarization current antenna that has an arc-shaped dielectric radiator, the method comprising:
applying an electric field to the arc-shaped dielectric radiator that generates a polarization current wave within the arc-shaped dielectric radiator, wherein the speed of the polarization current wave is greater than c along both an inner radius of the arc-shaped dielectric radiator and along an outer radius of the arc-shaped dielectric radiator, where c is the speed of light in vacuum, wherein the arc-shaped dielectric radiator includes a top surface, a bottom surface that is opposite the top surface, an inner surface, and an outer surface that is opposite the inner surface, the outer surface being longer than the inner surface, wherein the polarization current antenna further includes a plurality of electrodes that are mounted on the top surface of the arc-shaped dielectric radiator, and wherein electromagnetic radiation generated by the polarization current wave is emitted through the outer surface of the arc-shaped dielectric radiator. 92. The method of claim 91, wherein the polarization current antenna is configured so that the polarization current wave will have a first pre-selected speed at the inner radius of the arc-shaped dielectric radiator and a second pre-selected speed at the outer radius of the arc-shaped dielectric radiator, where the first and second pre-selected speeds are selected so that a beam of non-spherically decaying electromagnetic radiation that is generated by the polarization current wave has a pre-selected angular elevation beamwidth. | 2,800 |
11,680 | 11,680 | 14,996,322 | 2,855 | A method and apparatus for maintaining the rate of flow of hydraulic or lubricating fluid through a particle contamination sensor or monitor at an acceptable level is disclosed. The rate of flow may be a specific value or lie within a desired range of values. Regardless, maintaining the rate of flow at an acceptable level improves the accuracy of information produced by the contamination sensor or monitor. A display for displaying the particle information created by a particle contamination sensor or monitor in a manner more easily understood by maintenance personnel and a method of creating such a display is also disclosed. | 1. A hydraulic and lubricating fluid contamination monitor system comprising:
a variable speed pump for receiving fluid whose particle contamination is to be monitored and supplying the fluid to a contamination monitor at a controllable rate of flow; a contamination monitor for receiving fluid whose particle contamination is to be monitored from said variable speed pump, said contamination monitor generating information regarding the rate of flow of the fluid received from the variable speed pump and displayable information regarding the particle contamination of the fluid; and a controller for controlling the operation of the variable speed pump so as to keep the rate of flow at an acceptable level. 2. A hydraulic and lubricating fluid contamination sensor system as claimed in claim 1, wherein the acceptable level lies within a range of values. 3. A hydraulic and lubricating fluid contamination monitor system as claimed in claim 1, wherein said acceptable level is a predetermined value. 4. A hydraulic and lubricating fluid contamination monitor system as claimed in claim 1, wherein said controller manually controls the operation of the variable speed pump in accordance with user input. 5. A hydraulic and lubricating fluid contamination monitor system as claimed in claim 1, wherein the contamination monitor produces information indicating the rate of flow of the fluid received from said variable speed pump and the controller receives the rate of flow information and includes a program that controls the operation of the variable speed pump so as to keep the rate of flow at said acceptable level. 6. A hydraulic and lubricating fluid contamination monitor system as claimed in claim 1, including a display for displaying information regarding the particle contamination of the fluid. 7. A hydraulic and lubricating fluid contamination monitor system as claimed in claim 6, wherein the display includes a plurality of elements each displaying the level of contamination of particles having a size greater than a predetermined value. 8. A method of determining the particle contamination of hydraulic and lubricating fluid, comprising:
controlling the rate of flow of a fluid whose particle contamination is to be monitored such that the rate of flow is at an acceptable level; and monitoring the flow of fluid whose rate is controlled and producing information regarding the particle contamination of the fluid. 9. A method of determining the particle contamination of hydraulic and lubricating fluid as claimed in claim 8, wherein the acceptable level lies within a range of values. 10. A method of determining the particle contamination of hydraulic and lubricating fluid as claimed in claim 8, wherein the acceptable level is a predetermined value. 11. A method of determining the particle contamination of hydraulic and lubricating fluid as claimed in claim 8, wherein the rate of flow of a fluid whose particle count is to be monitored is manually controlled by a user. 12. A method of determining the particle contamination of hydraulic and lubricating fluid as claimed in claim 8 includes producing information regarding the rate of flow of the fluid whose particle contamination is to be monitored and automatically controlling the rate of flow based on said information. 13. A method of determining the particle contamination of hydraulic and lubricating fluid as claimed in claim 8, including a display for displaying information regarding the particle contamination of the fluid whose particle contamination is to be monitored. 14. A method of determining the particle contamination of hydraulic and lubricating fluid as claimed in claim 13, wherein the display includes a plurality of regions, each region displaying the level of contamination of particles having a size greater than a predetermined value. 15. In a system for monitoring the particle contamination of hydraulic and lubricating fluid that includes a sensor for determining the particle contamination of the fluid, the improvement comprising a controller for controlling the rate of flow of the fluid supplied to the sensor so that the rate of flow lies within an acceptable level. 16. The improvement claimed in claim 15, wherein the controller is a manual controller that controls the rate of flow of the fluid supplied to the sensor in accordance with user input. 17. The improvement claimed in claim 15, wherein the controller is part of a feedback control loop that senses the rate of fluid supplied to the sensor and automatically adjusts the rate of flow of the fluid supplied to the sensor so that the rate of flow lies within an acceptable level. 18. The improvement claimed in claim 17, wherein the acceptable level lies with a range of values. 19. The improvement claimed in claim 17, wherein the improvement includes a display for displaying the particle contamination of the fluid. 20. The improvement claimed in claim 19, wherein the particle contamination is displayed as the number of particles greater than a predetermined value. | A method and apparatus for maintaining the rate of flow of hydraulic or lubricating fluid through a particle contamination sensor or monitor at an acceptable level is disclosed. The rate of flow may be a specific value or lie within a desired range of values. Regardless, maintaining the rate of flow at an acceptable level improves the accuracy of information produced by the contamination sensor or monitor. A display for displaying the particle information created by a particle contamination sensor or monitor in a manner more easily understood by maintenance personnel and a method of creating such a display is also disclosed.1. A hydraulic and lubricating fluid contamination monitor system comprising:
a variable speed pump for receiving fluid whose particle contamination is to be monitored and supplying the fluid to a contamination monitor at a controllable rate of flow; a contamination monitor for receiving fluid whose particle contamination is to be monitored from said variable speed pump, said contamination monitor generating information regarding the rate of flow of the fluid received from the variable speed pump and displayable information regarding the particle contamination of the fluid; and a controller for controlling the operation of the variable speed pump so as to keep the rate of flow at an acceptable level. 2. A hydraulic and lubricating fluid contamination sensor system as claimed in claim 1, wherein the acceptable level lies within a range of values. 3. A hydraulic and lubricating fluid contamination monitor system as claimed in claim 1, wherein said acceptable level is a predetermined value. 4. A hydraulic and lubricating fluid contamination monitor system as claimed in claim 1, wherein said controller manually controls the operation of the variable speed pump in accordance with user input. 5. A hydraulic and lubricating fluid contamination monitor system as claimed in claim 1, wherein the contamination monitor produces information indicating the rate of flow of the fluid received from said variable speed pump and the controller receives the rate of flow information and includes a program that controls the operation of the variable speed pump so as to keep the rate of flow at said acceptable level. 6. A hydraulic and lubricating fluid contamination monitor system as claimed in claim 1, including a display for displaying information regarding the particle contamination of the fluid. 7. A hydraulic and lubricating fluid contamination monitor system as claimed in claim 6, wherein the display includes a plurality of elements each displaying the level of contamination of particles having a size greater than a predetermined value. 8. A method of determining the particle contamination of hydraulic and lubricating fluid, comprising:
controlling the rate of flow of a fluid whose particle contamination is to be monitored such that the rate of flow is at an acceptable level; and monitoring the flow of fluid whose rate is controlled and producing information regarding the particle contamination of the fluid. 9. A method of determining the particle contamination of hydraulic and lubricating fluid as claimed in claim 8, wherein the acceptable level lies within a range of values. 10. A method of determining the particle contamination of hydraulic and lubricating fluid as claimed in claim 8, wherein the acceptable level is a predetermined value. 11. A method of determining the particle contamination of hydraulic and lubricating fluid as claimed in claim 8, wherein the rate of flow of a fluid whose particle count is to be monitored is manually controlled by a user. 12. A method of determining the particle contamination of hydraulic and lubricating fluid as claimed in claim 8 includes producing information regarding the rate of flow of the fluid whose particle contamination is to be monitored and automatically controlling the rate of flow based on said information. 13. A method of determining the particle contamination of hydraulic and lubricating fluid as claimed in claim 8, including a display for displaying information regarding the particle contamination of the fluid whose particle contamination is to be monitored. 14. A method of determining the particle contamination of hydraulic and lubricating fluid as claimed in claim 13, wherein the display includes a plurality of regions, each region displaying the level of contamination of particles having a size greater than a predetermined value. 15. In a system for monitoring the particle contamination of hydraulic and lubricating fluid that includes a sensor for determining the particle contamination of the fluid, the improvement comprising a controller for controlling the rate of flow of the fluid supplied to the sensor so that the rate of flow lies within an acceptable level. 16. The improvement claimed in claim 15, wherein the controller is a manual controller that controls the rate of flow of the fluid supplied to the sensor in accordance with user input. 17. The improvement claimed in claim 15, wherein the controller is part of a feedback control loop that senses the rate of fluid supplied to the sensor and automatically adjusts the rate of flow of the fluid supplied to the sensor so that the rate of flow lies within an acceptable level. 18. The improvement claimed in claim 17, wherein the acceptable level lies with a range of values. 19. The improvement claimed in claim 17, wherein the improvement includes a display for displaying the particle contamination of the fluid. 20. The improvement claimed in claim 19, wherein the particle contamination is displayed as the number of particles greater than a predetermined value. | 2,800 |
11,681 | 11,681 | 15,315,790 | 2,862 | The invention relates to a method for estimating an electrical capacitance of a battery, in particular, of an electrically drivable vehicle, comprising the steps: detecting of battery-specific state data; determining of a first value for the electrical capacitance by using an estimation algorithm and the battery-specific state data or by a measurement of the electrical capacitance; determining of a second value for the electrical capacitance by using an empirical aging model of the battery and the battery-specific state data; determining of a first weighted value for the electrical capacitance by multiplying the first value for the electrical capacitance by a first weighting factor; determining of a second weighted value for the electrical capacitance by multiplying the second value for the electrical capacitance by a second weighting factor; determining of a value sum by adding the weighted values for the electrical capacitance; determining of a weighting sum by adding the weighting factors; and determining of an estimation value for the electrical capacitance by dividing the value sum by the weighting sum. | 1. A method for estimating an electrical capacity of a battery, having the steps of:
acquiring battery-specific state data; determining a first value for the electrical capacity using an estimation algorithm (4) and the battery-specific state data or by measuring the electrical capacity; determining a second value for the electrical capacity using an empirical aging model (8) of the battery and the battery-specific state data; determining a first weighted value for the electrical capacity by multiplying the first value for the electrical capacity by a first weighting factor; determining a second weighted value for the electrical capacity by multiplying the second value for the electrical capacity by a second weighting factor; determining a value sum by adding the weighted values for the electrical capacity; determining a weighting sum by adding the weighting factors; and determining an estimated value for the electrical capacity by dividing the value sum by the weighting sum. 2. The method as claimed in claim 1, characterized in that battery-specific state data relating to a service life of the battery, given until the acquisition of the state data, or relating to at least the last operating cycle of a predefined length of time of the battery are acquired. 3. The method as claimed in claim 2, characterized in that a driving cycle and a rest cycle of the vehicle is/are used as the operating cycle. 4. The method as claimed in claim 1, characterized in that the estimation algorithm (4) is used to generate a signal which describes a quality and/or an error of a last estimation of the electrical capacity. 5. The method as claimed in claim 4, characterized in that the first value for the electrical capacity is given a stronger weighting than the second value for the electrical capacity, the smaller the error in the last estimation of the electrical capacity, and in that the second value for the electrical capacity is given a stronger weighting than the first value for the electrical capacity, the greater the error in the last estimation of the electrical capacity. 6. The method as claimed in claim 4, characterized in that the first value for the electrical capacity is completely rejected if the error in the last estimation of the electrical capacity is greater than or equal to a predefined maximum error limit value. 7. The method as claimed in claim 1, characterized in that a greatest possible change in the electrical capacity is determined using the empirical aging model (8) and the battery-specific state data. 8. The method as claimed in claim 1, characterized in that the estimated value for the electrical capacity is used to correct the empirical aging model (8). 9. The method as claimed in claim 1, wherein the battery is a battery of an electrically drivable vehicle. 10. The method as claimed in claim 2, characterized in that a driving cycle is used as the operating cycle. 11. The method as claimed in claim 2, characterized in that a rest cycle of the vehicle is used as the operating cycle. | The invention relates to a method for estimating an electrical capacitance of a battery, in particular, of an electrically drivable vehicle, comprising the steps: detecting of battery-specific state data; determining of a first value for the electrical capacitance by using an estimation algorithm and the battery-specific state data or by a measurement of the electrical capacitance; determining of a second value for the electrical capacitance by using an empirical aging model of the battery and the battery-specific state data; determining of a first weighted value for the electrical capacitance by multiplying the first value for the electrical capacitance by a first weighting factor; determining of a second weighted value for the electrical capacitance by multiplying the second value for the electrical capacitance by a second weighting factor; determining of a value sum by adding the weighted values for the electrical capacitance; determining of a weighting sum by adding the weighting factors; and determining of an estimation value for the electrical capacitance by dividing the value sum by the weighting sum.1. A method for estimating an electrical capacity of a battery, having the steps of:
acquiring battery-specific state data; determining a first value for the electrical capacity using an estimation algorithm (4) and the battery-specific state data or by measuring the electrical capacity; determining a second value for the electrical capacity using an empirical aging model (8) of the battery and the battery-specific state data; determining a first weighted value for the electrical capacity by multiplying the first value for the electrical capacity by a first weighting factor; determining a second weighted value for the electrical capacity by multiplying the second value for the electrical capacity by a second weighting factor; determining a value sum by adding the weighted values for the electrical capacity; determining a weighting sum by adding the weighting factors; and determining an estimated value for the electrical capacity by dividing the value sum by the weighting sum. 2. The method as claimed in claim 1, characterized in that battery-specific state data relating to a service life of the battery, given until the acquisition of the state data, or relating to at least the last operating cycle of a predefined length of time of the battery are acquired. 3. The method as claimed in claim 2, characterized in that a driving cycle and a rest cycle of the vehicle is/are used as the operating cycle. 4. The method as claimed in claim 1, characterized in that the estimation algorithm (4) is used to generate a signal which describes a quality and/or an error of a last estimation of the electrical capacity. 5. The method as claimed in claim 4, characterized in that the first value for the electrical capacity is given a stronger weighting than the second value for the electrical capacity, the smaller the error in the last estimation of the electrical capacity, and in that the second value for the electrical capacity is given a stronger weighting than the first value for the electrical capacity, the greater the error in the last estimation of the electrical capacity. 6. The method as claimed in claim 4, characterized in that the first value for the electrical capacity is completely rejected if the error in the last estimation of the electrical capacity is greater than or equal to a predefined maximum error limit value. 7. The method as claimed in claim 1, characterized in that a greatest possible change in the electrical capacity is determined using the empirical aging model (8) and the battery-specific state data. 8. The method as claimed in claim 1, characterized in that the estimated value for the electrical capacity is used to correct the empirical aging model (8). 9. The method as claimed in claim 1, wherein the battery is a battery of an electrically drivable vehicle. 10. The method as claimed in claim 2, characterized in that a driving cycle is used as the operating cycle. 11. The method as claimed in claim 2, characterized in that a rest cycle of the vehicle is used as the operating cycle. | 2,800 |
11,682 | 11,682 | 15,581,726 | 2,816 | Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyuria or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO 2 or HfO 2 . In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. In some embodiments the material is deposited on the first surface relative to the second surface with a selectivity of greater than about 50%, greater than about 60%, greater than about 70%, greater than about 80%, greater than about 90% or greater than about 95%. | 1. A vapor deposition process for selectively depositing a material on a first surface of a substrate relative to a second organic surface, the method comprising:
contacting the substrate with a first vapor phase hydrophobic reactant; and contacting substrate with a second vapor phase reactant, wherein the material is deposited selectively on the first surface relative to the second organic surface. 2. The method of claim 1, wherein the material is a metal oxide. 3. The method of claim 1, wherein the first hydrophobic reactant comprises at least one hydrophobic hydrocarbon ligand. 4. The method of claim 1, wherein the first hydrophobic reactant comprises one or two hydrophilic ligands. 5. The method of claim 4, wherein the hydrophilic ligand comprises an alkylamine, alkoxide or halide. 6. The method of claim 1, wherein the second reactant comprises H2O, O3, H2O2, oxygen plasma, oxygen ions, oxygen radicals or excited species of oxygen. 7. The method of claim 1, wherein the first surface is a metal surface, a semi-metal surface, an oxidized metal surface or an oxidized semi-metal surface. 8. The method of claim 1, wherein the first surface is a dielectric surface. 9. The method of claim 1, wherein the second organic surface comprises a self-assembled monolayer (SAM) or a directed self-assembled layer (DSA). 10. The method of claim 1, wherein the second organic surface comprises a polymer. 11. The method of claim 10, wherein the polymer is a polyimide, polyamide, polyuria, or polystyrene. 12. The method of claim 1, wherein the vapor deposition process is a cyclic chemical vapor deposition process. 13. The method of claim 1, wherein the vapor deposition process is an atomic layer deposition process. 14. The method of claim 1, wherein the material is deposited on the first surface relative to the second surface with a selectivity of greater than about 50%. 15. A method for selectively depositing a metal oxide on a first surface of a substrate relative to a second surface, the method comprising:
contacting substrate with a first hydrophobic reactant comprising metal; and contacting substrate with a second reactant, wherein the first substrate surface comprises a metal or semimetal containing material and the second substrate surface comprises an organic material. 16. The method of claim 15, wherein the metal oxide is ZrO2. 17. The method of claim 15, wherein the first hydrophobic metal reactant has the formula LnMXy, in which:
n is from 1 to 6; y is from 0 to 2; L is a hydrophobic ligand; X is a hydrophilic ligand; and M is a metal. 18. The method of claim 17, wherein M is selected from Hf, Zr, Ta and Nb. 19. The method of claim 17, wherein L is a Cp or C1-C4 alkyl. 20. The method of claim 15, wherein the second reactant comprises H2O. 21. The method of claim 15, wherein the first surface is a dielectric surface. 22. The method of claim 15, wherein the second surface comprises a SAM. 23. The method of claim 15, wherein the metal oxide is selectively deposited on the first surface of the substrate relative to the second surface with a selectivity of greater than 95%. | Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyuria or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO 2 or HfO 2 . In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. In some embodiments the material is deposited on the first surface relative to the second surface with a selectivity of greater than about 50%, greater than about 60%, greater than about 70%, greater than about 80%, greater than about 90% or greater than about 95%.1. A vapor deposition process for selectively depositing a material on a first surface of a substrate relative to a second organic surface, the method comprising:
contacting the substrate with a first vapor phase hydrophobic reactant; and contacting substrate with a second vapor phase reactant, wherein the material is deposited selectively on the first surface relative to the second organic surface. 2. The method of claim 1, wherein the material is a metal oxide. 3. The method of claim 1, wherein the first hydrophobic reactant comprises at least one hydrophobic hydrocarbon ligand. 4. The method of claim 1, wherein the first hydrophobic reactant comprises one or two hydrophilic ligands. 5. The method of claim 4, wherein the hydrophilic ligand comprises an alkylamine, alkoxide or halide. 6. The method of claim 1, wherein the second reactant comprises H2O, O3, H2O2, oxygen plasma, oxygen ions, oxygen radicals or excited species of oxygen. 7. The method of claim 1, wherein the first surface is a metal surface, a semi-metal surface, an oxidized metal surface or an oxidized semi-metal surface. 8. The method of claim 1, wherein the first surface is a dielectric surface. 9. The method of claim 1, wherein the second organic surface comprises a self-assembled monolayer (SAM) or a directed self-assembled layer (DSA). 10. The method of claim 1, wherein the second organic surface comprises a polymer. 11. The method of claim 10, wherein the polymer is a polyimide, polyamide, polyuria, or polystyrene. 12. The method of claim 1, wherein the vapor deposition process is a cyclic chemical vapor deposition process. 13. The method of claim 1, wherein the vapor deposition process is an atomic layer deposition process. 14. The method of claim 1, wherein the material is deposited on the first surface relative to the second surface with a selectivity of greater than about 50%. 15. A method for selectively depositing a metal oxide on a first surface of a substrate relative to a second surface, the method comprising:
contacting substrate with a first hydrophobic reactant comprising metal; and contacting substrate with a second reactant, wherein the first substrate surface comprises a metal or semimetal containing material and the second substrate surface comprises an organic material. 16. The method of claim 15, wherein the metal oxide is ZrO2. 17. The method of claim 15, wherein the first hydrophobic metal reactant has the formula LnMXy, in which:
n is from 1 to 6; y is from 0 to 2; L is a hydrophobic ligand; X is a hydrophilic ligand; and M is a metal. 18. The method of claim 17, wherein M is selected from Hf, Zr, Ta and Nb. 19. The method of claim 17, wherein L is a Cp or C1-C4 alkyl. 20. The method of claim 15, wherein the second reactant comprises H2O. 21. The method of claim 15, wherein the first surface is a dielectric surface. 22. The method of claim 15, wherein the second surface comprises a SAM. 23. The method of claim 15, wherein the metal oxide is selectively deposited on the first surface of the substrate relative to the second surface with a selectivity of greater than 95%. | 2,800 |
11,683 | 11,683 | 15,714,365 | 2,886 | Optical coherence tomography (OCT) probe and system designs are disclosed that minimize the effects of mechanical movement and strain to the probe to the OCT analysis. It also concerns optical designs that are robust against noise from the OCT laser source. Also integrated OCT system-probes are included that yield compact and robust electro-opto-mechanical systems along with polarization sensitive OCT systems. | 1. An integrated optical system for detecting an interference signal generated by an OCT probe, the integrated optical system comprising:
an hermetic package; an optical bench in the hermetic package; a detector system attached to the bench for detecting the interference signal; a beam splitter system attached to the bench that couples an OCT signal from a swept laser source to the OCT probe and couples the interference signal from the OCT probe to the detector system. 2. A system as claimed in claim 1, wherein the beam splitter system comprises a polarizing beam splitter for directing a first portion of the interference signal of a first polarization to a first interference detector of the detector system and second portion of the interference signal of a second polarization to a second detector of the detector system. 3. A system as claimed in claim 1, further comprising an amplitude detector for detecting a portion of the OCT signal received from the swept laser source. 4. A system as claimed in claim 1, further comprising a k-clock optical reference attached to the bench for spectrally filtering the OCT signal and a k-clock detector for detecting the OCT signal filtered by the k-clock optical reference to generate a k-clock signal. 5. A system as claimed in claim 1, further comprising a thermoelectric cooler in the hermetic package for controller the temperature of the optical bench. 6. A system as claimed in claim 1, wherein the swept source comprises a swept laser source. 7. A system as claimed in claim 1, further comprising a lens for coupling OCT signal into an optical fiber that transmits the OCT signal to the OCT probe. 8. A system as claimed in claim 1, wherein the hermetic package is a butterfly or dual inline package. 9. A system as claimed in claim 1, wherein the swept source comprises a swept laser source. 10. An integrated OCT system, comprising:
an hermetic package having an optical window; an optical bench in the hermetic package; a swept source laser system implemented on the optical bench for generating an OCT signal; a detector system attached to the bench for detecting an interference signal; and a beam splitter system attached to the bench that couples the OCT signal from the swept laser source through the optical window to an object of interest, couples a portion of the OCT signal to a reference arm, couples light returning from the reference arm to the detector system, and directs light returning from the object of interest to the detector system, 11. A system as claimed in claim 10, further comprising an amplitude detector attached to the bench for detecting a portion of the OCT signal from the swept source laser system. 12. A system as claimed in claim 10, further comprising a k-clock optical reference attached to the bench for spectrally filtering the OCT signal and a k-clock detector for detecting the OCT signal filtered by the k-clock optical reference to generate a k-clock signal. 13. A system as claimed in claim 10, wherein the k-clock signal is received by an analog to digital sampling system to trigger the sampling of the detector system. 14. A system as claimed in claim 10, further comprising a thermoelectric cooler in the hermetic package for controller the temperature of the optical bench. 15. A system as claimed in claim 10, wherein the beam splitter system comprises only a single beam splitter which is attached to the optical bench. 16. A system as claimed in claim 10, wherein the reference arm is entirely contained within the hermetic package. 17. A system as claimed in claim 10, wherein the swept source comprises a swept laser source. 18. A system as claimed in claim 10, wherein the swept source comprises a gain chip secured to the optical bench and a tunable filter, which is secured to the optical bench. 19. A system as claimed in claim 6, further comprising a lens for coupling the OCT signal through the optical window to the object of interest. 20. A system as claimed in claim 6, wherein the hermetic package is a butterfly or dual inline package. | Optical coherence tomography (OCT) probe and system designs are disclosed that minimize the effects of mechanical movement and strain to the probe to the OCT analysis. It also concerns optical designs that are robust against noise from the OCT laser source. Also integrated OCT system-probes are included that yield compact and robust electro-opto-mechanical systems along with polarization sensitive OCT systems.1. An integrated optical system for detecting an interference signal generated by an OCT probe, the integrated optical system comprising:
an hermetic package; an optical bench in the hermetic package; a detector system attached to the bench for detecting the interference signal; a beam splitter system attached to the bench that couples an OCT signal from a swept laser source to the OCT probe and couples the interference signal from the OCT probe to the detector system. 2. A system as claimed in claim 1, wherein the beam splitter system comprises a polarizing beam splitter for directing a first portion of the interference signal of a first polarization to a first interference detector of the detector system and second portion of the interference signal of a second polarization to a second detector of the detector system. 3. A system as claimed in claim 1, further comprising an amplitude detector for detecting a portion of the OCT signal received from the swept laser source. 4. A system as claimed in claim 1, further comprising a k-clock optical reference attached to the bench for spectrally filtering the OCT signal and a k-clock detector for detecting the OCT signal filtered by the k-clock optical reference to generate a k-clock signal. 5. A system as claimed in claim 1, further comprising a thermoelectric cooler in the hermetic package for controller the temperature of the optical bench. 6. A system as claimed in claim 1, wherein the swept source comprises a swept laser source. 7. A system as claimed in claim 1, further comprising a lens for coupling OCT signal into an optical fiber that transmits the OCT signal to the OCT probe. 8. A system as claimed in claim 1, wherein the hermetic package is a butterfly or dual inline package. 9. A system as claimed in claim 1, wherein the swept source comprises a swept laser source. 10. An integrated OCT system, comprising:
an hermetic package having an optical window; an optical bench in the hermetic package; a swept source laser system implemented on the optical bench for generating an OCT signal; a detector system attached to the bench for detecting an interference signal; and a beam splitter system attached to the bench that couples the OCT signal from the swept laser source through the optical window to an object of interest, couples a portion of the OCT signal to a reference arm, couples light returning from the reference arm to the detector system, and directs light returning from the object of interest to the detector system, 11. A system as claimed in claim 10, further comprising an amplitude detector attached to the bench for detecting a portion of the OCT signal from the swept source laser system. 12. A system as claimed in claim 10, further comprising a k-clock optical reference attached to the bench for spectrally filtering the OCT signal and a k-clock detector for detecting the OCT signal filtered by the k-clock optical reference to generate a k-clock signal. 13. A system as claimed in claim 10, wherein the k-clock signal is received by an analog to digital sampling system to trigger the sampling of the detector system. 14. A system as claimed in claim 10, further comprising a thermoelectric cooler in the hermetic package for controller the temperature of the optical bench. 15. A system as claimed in claim 10, wherein the beam splitter system comprises only a single beam splitter which is attached to the optical bench. 16. A system as claimed in claim 10, wherein the reference arm is entirely contained within the hermetic package. 17. A system as claimed in claim 10, wherein the swept source comprises a swept laser source. 18. A system as claimed in claim 10, wherein the swept source comprises a gain chip secured to the optical bench and a tunable filter, which is secured to the optical bench. 19. A system as claimed in claim 6, further comprising a lens for coupling the OCT signal through the optical window to the object of interest. 20. A system as claimed in claim 6, wherein the hermetic package is a butterfly or dual inline package. | 2,800 |
11,684 | 11,684 | 15,588,604 | 2,875 | A theatre light projector including a housing, a plurality of light sources, a first aperture device and a lens system. The lens system may include a first lens sector and a second lens sector, each of which may have a positive spherical optical power. The first lens sector may have a first radii, and the second lens sector may have a second radii, wherein the first radii and the second radii are substantially parallel to each other. The first aperture device may be comprised of a first aperture comprised of a color filter and/or a pattern. The plurality of light sources may be comprised of a first light source and a second light source and each may be comprised of a white solid state light source, which may be a light emitting diode. The white solid state light source may be a laser diode. | 1. A theatre light projector comprising:
a housing, a plurality of light sources, a first aperture device and a lens system; wherein the lens system is comprised of a first lens sector and a second lens sector; wherein the first lens sector and the second lens sector have a positive spherical optical power; wherein the first lens sector has a first radii; wherein the second lens sector has a second radii; and wherein the first radii and the second radii are substantially parallel to each other. 2. The theatre light projector of claim 1 wherein
the first aperture device is comprised of a first aperture and the first aperture is comprised of a color filter. 3. The theatre light projector of claim 1 wherein
the first aperture device is comprised of a first aperture device and the first aperture device is comprised of a pattern. 4. The theatre light projector of claim 2 wherein
the plurality of light sources are comprised of a first light source and a second light source and each of the first light source and the second light source is comprised of a white solid state light source. 5. The theatre light projector of claim 2 wherein
the white solid state light source is a light emitting diode. 6. The theatre light projector of claim 1 wherein
the white solid state light source is a laser diode. 7. The theatre light projector of claim 1 wherein
the plurality of light sources include a first light source and a second light source;
wherein the first light source has a first heatsink and the second light source has a second heatsink;
wherein the first light source is configured to project a first light having a first light path having a direction;
wherein the first heatsink is comprised of an adjustment mechanism for altering the direction of the first light path. 8. The theatre light projector of claim 7 wherein
the heatsink adjustment mechanism is comprised of a compression component. 9. The theatre light projector of claim 1 further comprising
an output aperture wherein at least one surface of the output aperture has a stable wetting coating. 10. The theatre light projector of claim 9 wherein
the stable wetting coating is a silicone derivative nano coating. 11. A theatre light projector comprising:
a housing, a plurality of light sources, a first aperture device and variable diffusion system; wherein the plurality of light sources is comprised of a first light source which is configured to project a first light in a first light path and further comprising a second light source which is configured to project a second light in a second light path; wherein the variable diffusion system is comprised of a first diffusing substrate and a second diffusing substrate; wherein the first diffusing substrate is rotatable into a first state and a second state wherein in the first state the first diffusing substrate is substantially perpendicular to the first light path and wherein the in the second state the first diffusing substrate is substantially parallel to the first light path and wherein the second diffusing substrate is rotatable into a first state and a second state wherein in the first state the second diffusing substrate is substantially perpendicular to the first light path and wherein in the second state the second diffusing substrate is substantially parallel to the second light path. 12. The theatre light projector of claim 11 wherein
the first aperture device is comprised of a first aperture and the first aperture is comprised of a color filter. 13. The theatre light projector of claim 11 wherein
the first aperture device is comprised of a first aperture device and the first aperture device is comprised of a pattern. 14. The theatre light projector of claim 12 wherein
the plurality of light sources are comprised of a first light source and a second light source and each of the first light source and the second light source is a white light source. 15. The theatre light projector of claim 11 wherein
each of the plurality of light sources is a light emitting diode. 16. The theatre light projector of claim 11 further comprising
an output aperture wherein at least one surface of the output aperture has a stable wetting coating. 17. The theatre light projector of claim 16 wherein
the stable wetting coating is a silicone derivative nano coating. 18. The theatre light projector of claim 11 wherein
the plurality of light sources are comprised of a first light source and a second light source and wherein the first light source has a first heatsink and the second light source has a second heatsink; wherein the first light source is configured to project a first light in a first light path; and wherein the first heatsink is comprised of an adjustment mechanism for altering a direction of the first light path. 19. The theatre light projector of claim 7 wherein
the heatsink adjustment mechanism is comprised of a compression component. 20. A theatre light projector comprising:
a housing, a plurality of light sources, a first aperture device, a lens system and a output aperture; wherein the plurality of light sources is comprised of a first light source and a second light source; wherein the first light source is a solid state white light source; wherein the second light source is a second solid state white light source; wherein the first aperture device is comprised of a plurality of apertures, including a first aperture, a second aperture, and an output aperture; wherein the first aperture is comprised of a first color filter; wherein the second aperture is comprised of a second color filter; wherein the output aperture is comprised of a first surface and a second surface; and wherein at least the first surface has a stable wetting coating. 21. The theatre light projector of claim 20 wherein
the stable wetting coating is a silicon derivative nano coating. 22. The theatre light projector of claim 20 wherein
the lens system is comprised of a plurality of pie shaped lens components. 23. The theatre light projector of claim 21 further comprising
a diffusing system comprised of a plurality of rotatable diffusing substrates. | A theatre light projector including a housing, a plurality of light sources, a first aperture device and a lens system. The lens system may include a first lens sector and a second lens sector, each of which may have a positive spherical optical power. The first lens sector may have a first radii, and the second lens sector may have a second radii, wherein the first radii and the second radii are substantially parallel to each other. The first aperture device may be comprised of a first aperture comprised of a color filter and/or a pattern. The plurality of light sources may be comprised of a first light source and a second light source and each may be comprised of a white solid state light source, which may be a light emitting diode. The white solid state light source may be a laser diode.1. A theatre light projector comprising:
a housing, a plurality of light sources, a first aperture device and a lens system; wherein the lens system is comprised of a first lens sector and a second lens sector; wherein the first lens sector and the second lens sector have a positive spherical optical power; wherein the first lens sector has a first radii; wherein the second lens sector has a second radii; and wherein the first radii and the second radii are substantially parallel to each other. 2. The theatre light projector of claim 1 wherein
the first aperture device is comprised of a first aperture and the first aperture is comprised of a color filter. 3. The theatre light projector of claim 1 wherein
the first aperture device is comprised of a first aperture device and the first aperture device is comprised of a pattern. 4. The theatre light projector of claim 2 wherein
the plurality of light sources are comprised of a first light source and a second light source and each of the first light source and the second light source is comprised of a white solid state light source. 5. The theatre light projector of claim 2 wherein
the white solid state light source is a light emitting diode. 6. The theatre light projector of claim 1 wherein
the white solid state light source is a laser diode. 7. The theatre light projector of claim 1 wherein
the plurality of light sources include a first light source and a second light source;
wherein the first light source has a first heatsink and the second light source has a second heatsink;
wherein the first light source is configured to project a first light having a first light path having a direction;
wherein the first heatsink is comprised of an adjustment mechanism for altering the direction of the first light path. 8. The theatre light projector of claim 7 wherein
the heatsink adjustment mechanism is comprised of a compression component. 9. The theatre light projector of claim 1 further comprising
an output aperture wherein at least one surface of the output aperture has a stable wetting coating. 10. The theatre light projector of claim 9 wherein
the stable wetting coating is a silicone derivative nano coating. 11. A theatre light projector comprising:
a housing, a plurality of light sources, a first aperture device and variable diffusion system; wherein the plurality of light sources is comprised of a first light source which is configured to project a first light in a first light path and further comprising a second light source which is configured to project a second light in a second light path; wherein the variable diffusion system is comprised of a first diffusing substrate and a second diffusing substrate; wherein the first diffusing substrate is rotatable into a first state and a second state wherein in the first state the first diffusing substrate is substantially perpendicular to the first light path and wherein the in the second state the first diffusing substrate is substantially parallel to the first light path and wherein the second diffusing substrate is rotatable into a first state and a second state wherein in the first state the second diffusing substrate is substantially perpendicular to the first light path and wherein in the second state the second diffusing substrate is substantially parallel to the second light path. 12. The theatre light projector of claim 11 wherein
the first aperture device is comprised of a first aperture and the first aperture is comprised of a color filter. 13. The theatre light projector of claim 11 wherein
the first aperture device is comprised of a first aperture device and the first aperture device is comprised of a pattern. 14. The theatre light projector of claim 12 wherein
the plurality of light sources are comprised of a first light source and a second light source and each of the first light source and the second light source is a white light source. 15. The theatre light projector of claim 11 wherein
each of the plurality of light sources is a light emitting diode. 16. The theatre light projector of claim 11 further comprising
an output aperture wherein at least one surface of the output aperture has a stable wetting coating. 17. The theatre light projector of claim 16 wherein
the stable wetting coating is a silicone derivative nano coating. 18. The theatre light projector of claim 11 wherein
the plurality of light sources are comprised of a first light source and a second light source and wherein the first light source has a first heatsink and the second light source has a second heatsink; wherein the first light source is configured to project a first light in a first light path; and wherein the first heatsink is comprised of an adjustment mechanism for altering a direction of the first light path. 19. The theatre light projector of claim 7 wherein
the heatsink adjustment mechanism is comprised of a compression component. 20. A theatre light projector comprising:
a housing, a plurality of light sources, a first aperture device, a lens system and a output aperture; wherein the plurality of light sources is comprised of a first light source and a second light source; wherein the first light source is a solid state white light source; wherein the second light source is a second solid state white light source; wherein the first aperture device is comprised of a plurality of apertures, including a first aperture, a second aperture, and an output aperture; wherein the first aperture is comprised of a first color filter; wherein the second aperture is comprised of a second color filter; wherein the output aperture is comprised of a first surface and a second surface; and wherein at least the first surface has a stable wetting coating. 21. The theatre light projector of claim 20 wherein
the stable wetting coating is a silicon derivative nano coating. 22. The theatre light projector of claim 20 wherein
the lens system is comprised of a plurality of pie shaped lens components. 23. The theatre light projector of claim 21 further comprising
a diffusing system comprised of a plurality of rotatable diffusing substrates. | 2,800 |
11,685 | 11,685 | 15,496,223 | 2,829 | An edge delimits a semiconductor body in a direction parallel to a first side of the semiconductor body. A peripheral area is arranged between the active area and edge. A first semiconductor region of a first conductivity type extends from the active area into the peripheral area. A second semiconductor region of a second conductivity type forms a pn-junction with the first semiconductor region. A first edge termination region of the second conductivity type arranged at the first side adjoins the first semiconductor region, between the second semiconductor region and edge. A second edge termination region of the first conductivity type arranged at the first side and between the first edge termination region and edge has a varying concentration of dopants of the first conductivity type which increases at least next to the first edge termination region substantially linearly with an increasing distance from the first edge termination region. | 1. A semiconductor device, comprising:
a semiconductor body comprising:
a first side;
an edge delimiting the semiconductor body in a direction parallel to the first side;
an active area;
a peripheral area arranged between the active area and the edge;
a first semiconductor region of a first conductivity type extending from the active area into the peripheral area;
a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region;
a first edge termination region of the second conductivity type adjoining the first semiconductor region in the peripheral area, and arranged at the first side and between the second semiconductor region and the edge; and
a second edge termination region of the first conductivity type comprising a varying concentration of dopants of the first conductivity type, which increases at least next to the first edge termination region substantially linearly with an increasing distance from the first edge termination region and/or with an increasing distance from the active area, and arranged at the first side and between the first edge termination region and the edge. 2. The semiconductor device of claim 1, wherein the semiconductor device is a bipolar semiconductor device implemented as an IGBT, wherein at least one of the first semiconductor region and the second semiconductor region extends between the active area and the peripheral area, wherein the second semiconductor region has a higher maximum doping concentration than the first edge termination region, and/or wherein the second semiconductor region forms a body region of the IGBT. 3. The semiconductor device of claim 1, wherein the semiconductor device is a thyristor, wherein at least one of the first semiconductor region and the second semiconductor region extends between the active area and the peripheral area, wherein the second semiconductor region has a higher maximum doping concentration than the first edge termination region, and/or wherein the second semiconductor region forms a base region of the thyristor. 4. The semiconductor device of claim 1, wherein a minimum value of the varying concentration of dopants of the first conductivity type is larger than a maximum doping concentration of the first semiconductor region. 5. The semiconductor device of claim 1, wherein the first edge termination region comprises at least next to the second edge termination region a varying concentration of dopants of the second conductivity type decreasing with a decreasing distance from the second edge termination region and/or with an increasing distance from the active area. 6. The semiconductor device of claim 1, wherein the varying concentration of dopants of the second conductivity type decreases substantially linearly with the decreasing distance from the second edge termination region at least next to the second edge termination region. 7. The semiconductor device of claim 1, wherein the second edge termination region adjoins the first edge termination region. 8. The semiconductor device of claim 1, further comprising at least one of:
a third semiconductor region of the second conductivity type arranged between the first semiconductor region and a second side of the semiconductor body opposite the first side; a fourth semiconductor region of the first conductivity type forming a second pn-junction with the second semiconductor region; a first metallization arranged on the first side and in contact with at least one of the fourth semiconductor region and the second semiconductor region; a second metallization arranged opposite the first metallization and in contact with at least one of the third semiconductor region and the first semiconductor region; a dielectric layer arranged on the first side at least partially covering the peripheral area; a gate electrode separated from the first semiconductor region and the second semiconductor region by a gate dielectric region; and a control metallization in contact with one of the second semiconductor region and the gate electrode. 9. The semiconductor device of claim 1, wherein the first edge termination region and the second edge termination region do not overlap which each other when seen from above, or wherein the first edge termination region is partly arranged between the second edge termination region and the first side. 10. The semiconductor device of claim 1, wherein the semiconductor body further comprises at least one of:
a third edge termination region of the second conductivity type arranged between the second edge termination region and the edge; a fourth edge termination region of the first conductivity type arranged between the third edge termination region and the edge; and a dielectric region arranged between at least one of the first edge termination region and the second edge termination region and at least one of the third edge termination region and the fourth edge termination region. 11. The semiconductor device of claim 1, wherein an extension of the first edge termination region in a horizontal direction parallel to the first side is at least two times larger than an extension of the first edge termination region in a vertical direction perpendicular to the first side, and/or wherein an extension of the second edge termination region in the horizontal direction is at least two times larger than an extension of the second edge termination region in the vertical direction. 12. A semiconductor device, comprising:
a semiconductor body comprising:
a first side;
an edge delimiting the semiconductor body in a direction parallel to the first side;
a first semiconductor region of a first conductivity type;
a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region;
a first edge termination region of the second conductivity type adjoining the first semiconductor region, and arranged between the second semiconductor region and the edge; and
a second edge termination region of the first conductivity type forming a further pn-junction with the first edge termination region, arranged between the first edge termination region and the edge but not between the first edge termination region and the first side, and comprising a varying concentration of dopants of the first conductivity type which increases with a decreasing distance from the edge, a first extension in a vertical direction perpendicular to the first side, and a second extension in a horizontal direction parallel to the first side which is at least two times larger than the first extension. 13. The semiconductor device of claim 12, wherein the semiconductor device is a bipolar semiconductor device, wherein the second semiconductor region is arranged in an active area of the semiconductor device, wherein the first edge termination region and the second edge termination region are arranged in a peripheral area of the semiconductor device arranged between the active area and the edge, wherein the first edge termination region comprises a varying concentration of dopants of the second conductivity type which decreases with a decreasing distance from the edge, and/or wherein the second edge termination region and the first edge termination region extend, in a cross-section perpendicular to the first side, between the first side and a horizontal line parallel to the first side, and/or wherein an integral that can be obtained by integrating a difference between the concentration of dopants of the first conductivity type and the concentration of dopants of the second conductivity type along an integration path, which is perpendicular to the horizontal line and extends from a first point at the horizontal line to a second point at the first side, varies at least next to a pn-junction formed between the first edge termination region and the second edge termination region substantially linearly with a horizontal coordinate of the first point. 14. A method for manufacturing a semiconductor device, the method comprising:
providing a wafer having an upper side and comprising a semiconductor layer extending to the upper side; defining an active area and a peripheral area surrounding the active area when seen from above; and introducing donors and acceptors from the upper side into the semiconductor layer so that a first edge termination region and a second edge termination region of opposite conductivity type are formed at the upper side in respective portions of the semiconductor layer arranged in the peripheral area, the first edge termination region comprising, in a vertical direction perpendicular to the upper side, a first extension, comprises, in a horizontal direction parallel to the upper side, a second extension, which is at least two times larger than the first extension, and is arranged between the second edge termination region and the active area, and that the second edge termination region comprises, in the vertical direction, a third extension and, in the horizontal direction, a fourth extension, which is at least two times larger than the third extension, and comprises a varying concentration of dopants, which decreases at least next to the first edge termination region with a decreasing distance from the first edge termination region and/or with a decreasing distance from the active area. 15. The method of claim 14, wherein introducing donors and acceptors comprises masked implanting of donor ions and acceptor ions from the upper side and subsequent annealing, wherein introducing donors and acceptors comprises implanting of donor ions from the upper side, masked implanting of acceptor ions from the upper side and subsequent annealing, wherein introducing donors and acceptors comprises masked implanting of donor ions from the upper side, implanting of acceptor ions from the upper side and subsequent annealing, wherein the method is performed such that the first edge termination region comprises a varying concentration of p-type dopants which decreases with a decreasing distance from the second edge termination region at least next to the second edge termination region, wherein the method is performed such that the varying concentration of p-type dopants decreases at least next to the second edge termination region substantially linearly with the decreasing distance from the second edge termination region, and/or wherein the method is performed such that the varying concentration of dopants of the second edge termination region decreases at least next to the first edge termination region substantially linearly with the decreasing distance from the first edge termination region. 16. The method of claim 14, wherein introducing donors and acceptors comprises forming a mask on the upper side so that the mask comprises first openings in an outer portion of the peripheral area and second openings in an inner portion of the peripheral area arranged between the outer portion and the active area, wherein the first openings are formed such that an exposed area of the semiconductor layer increases with an increasing distance from the active area, and wherein the second openings are formed such that an exposed area of the semiconductor layer decreases with an increasing distance from the active area. 17. The method of claim 16, wherein introducing donors and acceptors comprises at least one of:
forming on the mask a first photo resist mask having an opening in the inner portion of the peripheral area; implanting of acceptor ions; removing the first photo resist mask; forming on the mask a second photo resist mask having an opening in the outer portion of the peripheral area; implanting of donor ions; and removing the second photo resist mask. 18. The method of claim 14, wherein introducing donors and acceptors comprises at least one of:
forming a first implantation mask on the upper side covering an inner portion of the peripheral area, which is arranged between an outer portion of the peripheral area and the active area, and comprising first openings so that an exposed area of the semiconductor layer in the outer portion increases with an increasing distance from the active area; implanting of donor ions using the first implantation mask; removing the first implantation mask; forming a second implantation mask on the upper side covering the outer portion of the peripheral area and comprising second openings so that an exposed area of the semiconductor layer in the inner portion decreases with an increasing distance from the active area; implanting donors from the upper side into the semiconductor layer in the peripheral area; forming an implantation mask on the upper side comprising openings so that an exposed area of the semiconductor layer in the peripheral decreases with an increasing distance from the active area; and implanting acceptor ions using the implantation mask so that the donors in the semiconductor layer are partly compensated in the outer portion and overcompensated in the inner portion of the peripheral area after subsequent annealing. 19. The method of claim 15, wherein an implantation angle is less than about 0.15° during implanting the donor ions and/or during implanting the acceptor ions. 20. The method of claim 14, wherein introducing donors and acceptors comprises at least one of:
forming a mask on the upper side comprising openings so that an exposed area of the semiconductor layer in the peripheral area increases with an increasing distance from the active area, the mask comprising first dopants; a first thermal process to outdiffuse the first dopants from the mask into the semiconductor layer; forming a cap layer on the mask; implanting donors ions into the semiconductor layer using the mask if the first dopants can act as acceptors the semiconductor layer; implanting acceptors ions into the semiconductor layer using the mask if the first dopants can act as donors the semiconductor layer; and a second thermal process to activate at least the implanted the ions in the semiconductor layer. | An edge delimits a semiconductor body in a direction parallel to a first side of the semiconductor body. A peripheral area is arranged between the active area and edge. A first semiconductor region of a first conductivity type extends from the active area into the peripheral area. A second semiconductor region of a second conductivity type forms a pn-junction with the first semiconductor region. A first edge termination region of the second conductivity type arranged at the first side adjoins the first semiconductor region, between the second semiconductor region and edge. A second edge termination region of the first conductivity type arranged at the first side and between the first edge termination region and edge has a varying concentration of dopants of the first conductivity type which increases at least next to the first edge termination region substantially linearly with an increasing distance from the first edge termination region.1. A semiconductor device, comprising:
a semiconductor body comprising:
a first side;
an edge delimiting the semiconductor body in a direction parallel to the first side;
an active area;
a peripheral area arranged between the active area and the edge;
a first semiconductor region of a first conductivity type extending from the active area into the peripheral area;
a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region;
a first edge termination region of the second conductivity type adjoining the first semiconductor region in the peripheral area, and arranged at the first side and between the second semiconductor region and the edge; and
a second edge termination region of the first conductivity type comprising a varying concentration of dopants of the first conductivity type, which increases at least next to the first edge termination region substantially linearly with an increasing distance from the first edge termination region and/or with an increasing distance from the active area, and arranged at the first side and between the first edge termination region and the edge. 2. The semiconductor device of claim 1, wherein the semiconductor device is a bipolar semiconductor device implemented as an IGBT, wherein at least one of the first semiconductor region and the second semiconductor region extends between the active area and the peripheral area, wherein the second semiconductor region has a higher maximum doping concentration than the first edge termination region, and/or wherein the second semiconductor region forms a body region of the IGBT. 3. The semiconductor device of claim 1, wherein the semiconductor device is a thyristor, wherein at least one of the first semiconductor region and the second semiconductor region extends between the active area and the peripheral area, wherein the second semiconductor region has a higher maximum doping concentration than the first edge termination region, and/or wherein the second semiconductor region forms a base region of the thyristor. 4. The semiconductor device of claim 1, wherein a minimum value of the varying concentration of dopants of the first conductivity type is larger than a maximum doping concentration of the first semiconductor region. 5. The semiconductor device of claim 1, wherein the first edge termination region comprises at least next to the second edge termination region a varying concentration of dopants of the second conductivity type decreasing with a decreasing distance from the second edge termination region and/or with an increasing distance from the active area. 6. The semiconductor device of claim 1, wherein the varying concentration of dopants of the second conductivity type decreases substantially linearly with the decreasing distance from the second edge termination region at least next to the second edge termination region. 7. The semiconductor device of claim 1, wherein the second edge termination region adjoins the first edge termination region. 8. The semiconductor device of claim 1, further comprising at least one of:
a third semiconductor region of the second conductivity type arranged between the first semiconductor region and a second side of the semiconductor body opposite the first side; a fourth semiconductor region of the first conductivity type forming a second pn-junction with the second semiconductor region; a first metallization arranged on the first side and in contact with at least one of the fourth semiconductor region and the second semiconductor region; a second metallization arranged opposite the first metallization and in contact with at least one of the third semiconductor region and the first semiconductor region; a dielectric layer arranged on the first side at least partially covering the peripheral area; a gate electrode separated from the first semiconductor region and the second semiconductor region by a gate dielectric region; and a control metallization in contact with one of the second semiconductor region and the gate electrode. 9. The semiconductor device of claim 1, wherein the first edge termination region and the second edge termination region do not overlap which each other when seen from above, or wherein the first edge termination region is partly arranged between the second edge termination region and the first side. 10. The semiconductor device of claim 1, wherein the semiconductor body further comprises at least one of:
a third edge termination region of the second conductivity type arranged between the second edge termination region and the edge; a fourth edge termination region of the first conductivity type arranged between the third edge termination region and the edge; and a dielectric region arranged between at least one of the first edge termination region and the second edge termination region and at least one of the third edge termination region and the fourth edge termination region. 11. The semiconductor device of claim 1, wherein an extension of the first edge termination region in a horizontal direction parallel to the first side is at least two times larger than an extension of the first edge termination region in a vertical direction perpendicular to the first side, and/or wherein an extension of the second edge termination region in the horizontal direction is at least two times larger than an extension of the second edge termination region in the vertical direction. 12. A semiconductor device, comprising:
a semiconductor body comprising:
a first side;
an edge delimiting the semiconductor body in a direction parallel to the first side;
a first semiconductor region of a first conductivity type;
a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region;
a first edge termination region of the second conductivity type adjoining the first semiconductor region, and arranged between the second semiconductor region and the edge; and
a second edge termination region of the first conductivity type forming a further pn-junction with the first edge termination region, arranged between the first edge termination region and the edge but not between the first edge termination region and the first side, and comprising a varying concentration of dopants of the first conductivity type which increases with a decreasing distance from the edge, a first extension in a vertical direction perpendicular to the first side, and a second extension in a horizontal direction parallel to the first side which is at least two times larger than the first extension. 13. The semiconductor device of claim 12, wherein the semiconductor device is a bipolar semiconductor device, wherein the second semiconductor region is arranged in an active area of the semiconductor device, wherein the first edge termination region and the second edge termination region are arranged in a peripheral area of the semiconductor device arranged between the active area and the edge, wherein the first edge termination region comprises a varying concentration of dopants of the second conductivity type which decreases with a decreasing distance from the edge, and/or wherein the second edge termination region and the first edge termination region extend, in a cross-section perpendicular to the first side, between the first side and a horizontal line parallel to the first side, and/or wherein an integral that can be obtained by integrating a difference between the concentration of dopants of the first conductivity type and the concentration of dopants of the second conductivity type along an integration path, which is perpendicular to the horizontal line and extends from a first point at the horizontal line to a second point at the first side, varies at least next to a pn-junction formed between the first edge termination region and the second edge termination region substantially linearly with a horizontal coordinate of the first point. 14. A method for manufacturing a semiconductor device, the method comprising:
providing a wafer having an upper side and comprising a semiconductor layer extending to the upper side; defining an active area and a peripheral area surrounding the active area when seen from above; and introducing donors and acceptors from the upper side into the semiconductor layer so that a first edge termination region and a second edge termination region of opposite conductivity type are formed at the upper side in respective portions of the semiconductor layer arranged in the peripheral area, the first edge termination region comprising, in a vertical direction perpendicular to the upper side, a first extension, comprises, in a horizontal direction parallel to the upper side, a second extension, which is at least two times larger than the first extension, and is arranged between the second edge termination region and the active area, and that the second edge termination region comprises, in the vertical direction, a third extension and, in the horizontal direction, a fourth extension, which is at least two times larger than the third extension, and comprises a varying concentration of dopants, which decreases at least next to the first edge termination region with a decreasing distance from the first edge termination region and/or with a decreasing distance from the active area. 15. The method of claim 14, wherein introducing donors and acceptors comprises masked implanting of donor ions and acceptor ions from the upper side and subsequent annealing, wherein introducing donors and acceptors comprises implanting of donor ions from the upper side, masked implanting of acceptor ions from the upper side and subsequent annealing, wherein introducing donors and acceptors comprises masked implanting of donor ions from the upper side, implanting of acceptor ions from the upper side and subsequent annealing, wherein the method is performed such that the first edge termination region comprises a varying concentration of p-type dopants which decreases with a decreasing distance from the second edge termination region at least next to the second edge termination region, wherein the method is performed such that the varying concentration of p-type dopants decreases at least next to the second edge termination region substantially linearly with the decreasing distance from the second edge termination region, and/or wherein the method is performed such that the varying concentration of dopants of the second edge termination region decreases at least next to the first edge termination region substantially linearly with the decreasing distance from the first edge termination region. 16. The method of claim 14, wherein introducing donors and acceptors comprises forming a mask on the upper side so that the mask comprises first openings in an outer portion of the peripheral area and second openings in an inner portion of the peripheral area arranged between the outer portion and the active area, wherein the first openings are formed such that an exposed area of the semiconductor layer increases with an increasing distance from the active area, and wherein the second openings are formed such that an exposed area of the semiconductor layer decreases with an increasing distance from the active area. 17. The method of claim 16, wherein introducing donors and acceptors comprises at least one of:
forming on the mask a first photo resist mask having an opening in the inner portion of the peripheral area; implanting of acceptor ions; removing the first photo resist mask; forming on the mask a second photo resist mask having an opening in the outer portion of the peripheral area; implanting of donor ions; and removing the second photo resist mask. 18. The method of claim 14, wherein introducing donors and acceptors comprises at least one of:
forming a first implantation mask on the upper side covering an inner portion of the peripheral area, which is arranged between an outer portion of the peripheral area and the active area, and comprising first openings so that an exposed area of the semiconductor layer in the outer portion increases with an increasing distance from the active area; implanting of donor ions using the first implantation mask; removing the first implantation mask; forming a second implantation mask on the upper side covering the outer portion of the peripheral area and comprising second openings so that an exposed area of the semiconductor layer in the inner portion decreases with an increasing distance from the active area; implanting donors from the upper side into the semiconductor layer in the peripheral area; forming an implantation mask on the upper side comprising openings so that an exposed area of the semiconductor layer in the peripheral decreases with an increasing distance from the active area; and implanting acceptor ions using the implantation mask so that the donors in the semiconductor layer are partly compensated in the outer portion and overcompensated in the inner portion of the peripheral area after subsequent annealing. 19. The method of claim 15, wherein an implantation angle is less than about 0.15° during implanting the donor ions and/or during implanting the acceptor ions. 20. The method of claim 14, wherein introducing donors and acceptors comprises at least one of:
forming a mask on the upper side comprising openings so that an exposed area of the semiconductor layer in the peripheral area increases with an increasing distance from the active area, the mask comprising first dopants; a first thermal process to outdiffuse the first dopants from the mask into the semiconductor layer; forming a cap layer on the mask; implanting donors ions into the semiconductor layer using the mask if the first dopants can act as acceptors the semiconductor layer; implanting acceptors ions into the semiconductor layer using the mask if the first dopants can act as donors the semiconductor layer; and a second thermal process to activate at least the implanted the ions in the semiconductor layer. | 2,800 |
11,686 | 11,686 | 14,387,778 | 2,896 | An electrically-controlled liquid crystal glazing unit can include a substrate carrying a liquid crystal element disposed between a first electrode and a second electrode connected to an electrical power supply. The liquid crystal element can transform from a diffusing state at zero voltage to a transparent and/or colored state at a sinusoidal AC voltage having an operating amplitude (V 0 ). In some examples, the electrical power supply is configured to apply a start-up voltage whose amplitude progressively increases from zero up to the operating amplitude (V 0 ) and/or a shut-down voltage (V s (t)) whose amplitude decreases progressively from the operating amplitude (V 0 ) down to zero. | 1. An electrically-controlled liquid crystal glazing unit comprising:
a substrate carrying a liquid crystal element disposed between a first electrode and a second electrode connected to an electrical power supply, the liquid crystal element being capable of going: from a diffusing state in which the glazing unit is subjected to a zero voltage, to at least one of a transparent state and a colored state, in which the glazing unit is subjected to a sinusoidal AC voltage (Vnom(t)) having an operating amplitude (V0), wherein the electrical power supply is configured to apply to the glazing unit at least one of: a start-up voltage (Ve(t)) whose amplitude progressively increases from zero up to the operating amplitude (V0), over a start-up period of time (Ton) of at least 0.1 seconds beginning following the activation of the electrical power supply, and a shut-down voltage (Vs(t)) whose amplitude decreases progressively from the operating amplitude (V0) down to zero, over a shut-down period of time (Toff) of at least 0.1 seconds beginning following the shut-down of the electrical power supply. 2. The electrically-controlled glazing unit as claimed in claim 1, wherein the electrical power supply is configured to at least one of linearly increase the amplitude of the start-up voltage (Ve(t)) and linearly decrease the amplitude of the shut-down voltage (Vs(t)). 3. The electrically-controlled glazing unit as claimed in claim 1, wherein at least one of the start-up voltage (Ve(t)) and the shut-down voltage (Vs(t)) is pseudo-sinusoidal. 4. The electrically-controlled glazing unit as claimed in claim 3, wherein at least one of
the pseudo-sinusoidal start-up voltage (Ve(t)) and the sinusoidal AC voltage (Vnom(t)) have frequencies that are substantially identical, and the shut-down voltage (Vs(t)) and the sinusoidal AC voltage (Vnom(t)) have frequencies that are substantially identical. 5. The electrically-controlled glazing unit as claimed in claim 3, wherein the frequency of the pseudo-sinusoidal voltage is in the range between 40 Hz and 5 kHz. 6. The electrically-controlled glazing unit as claimed in claim 1, wherein the start-up voltage (Ve(t)) is one of polynomial and linear. 7. The electrically-controlled glazing unit as claimed in claim 1, wherein, at the end of the start-up period (Ton), the haze of the electrically-controlled glazing unit is less than 10%. 8. The electrically-controlled glazing unit as claimed in claim 1, wherein the electrical power supply comprises means for adjusting the start-up period (Ton). 9. A method for supplying electrical power to a liquid crystal electrically-controlled glazing unit comprising:
enabling an electrical power supply connected to at least one of a first electrode and a second electrode between which is disposed a liquid crystal element configured to transform from a diffusing state to at least one of a transparent state and a colored state; and applying to the glazing unit a start-up voltage (Ve(t)) whose amplitude progressively increases from zero up to a sinusoidal AC operating amplitude (V0) over a start-up period of time (Ton) of at least 0.1 seconds. 10. The method as claimed in claim 9, further comprising adjusting the start-up period (Ton). 11. The method as claimed in claim 9, further comprising:
disabling of the electrical power supply; and applying to the glazing unit a shut-down voltage (Vs(t)) whose amplitude decreases progressively from the operating amplitude (V0) down to zero over a shut-down period of time (Toff) of at least 0.1 seconds. 12. A device for supplying power to an electrically-controlled glazing unit comprising:
a switch connected to a programmable controller that is configured to control an electrical power supply connected to at least one of a first electrode and a second electrode between which is disposed a liquid crystal element configured to transform from a diffusing state to at least one of a transparent state and a colored state, wherein the controller is configured to progressively increase, via onboard software, an amplitude of a start-up voltage (Ve(t)) from zero up to a sinusoidal AC operating amplitude (V0), over a start-up period of time (Ton) of at least 0.1 seconds beginning following the enabling of the switch. 13. The electrically-controlled glazing unit as claimed in claim 1, wherein the electrical power supply is configured to apply to the glazing unit both:
the start-up voltage (Ve(t)) whose amplitude progressively increases from zero up to the operating amplitude (V0), over the start-up period of time (Ton), and the shut-down voltage (Vs(t)) whose amplitude decreases progressively from the operating amplitude (V0) down to zero, over the shut-down period of time (Toff). 14. The electrically-controlled glazing unit as claimed in claim 13, wherein the electrical power supply is configured to both linearly increase the amplitude of the start-up voltage (Ve(t)) and linearly decrease the amplitude of the shut-down voltage (Vs(t)). | An electrically-controlled liquid crystal glazing unit can include a substrate carrying a liquid crystal element disposed between a first electrode and a second electrode connected to an electrical power supply. The liquid crystal element can transform from a diffusing state at zero voltage to a transparent and/or colored state at a sinusoidal AC voltage having an operating amplitude (V 0 ). In some examples, the electrical power supply is configured to apply a start-up voltage whose amplitude progressively increases from zero up to the operating amplitude (V 0 ) and/or a shut-down voltage (V s (t)) whose amplitude decreases progressively from the operating amplitude (V 0 ) down to zero.1. An electrically-controlled liquid crystal glazing unit comprising:
a substrate carrying a liquid crystal element disposed between a first electrode and a second electrode connected to an electrical power supply, the liquid crystal element being capable of going: from a diffusing state in which the glazing unit is subjected to a zero voltage, to at least one of a transparent state and a colored state, in which the glazing unit is subjected to a sinusoidal AC voltage (Vnom(t)) having an operating amplitude (V0), wherein the electrical power supply is configured to apply to the glazing unit at least one of: a start-up voltage (Ve(t)) whose amplitude progressively increases from zero up to the operating amplitude (V0), over a start-up period of time (Ton) of at least 0.1 seconds beginning following the activation of the electrical power supply, and a shut-down voltage (Vs(t)) whose amplitude decreases progressively from the operating amplitude (V0) down to zero, over a shut-down period of time (Toff) of at least 0.1 seconds beginning following the shut-down of the electrical power supply. 2. The electrically-controlled glazing unit as claimed in claim 1, wherein the electrical power supply is configured to at least one of linearly increase the amplitude of the start-up voltage (Ve(t)) and linearly decrease the amplitude of the shut-down voltage (Vs(t)). 3. The electrically-controlled glazing unit as claimed in claim 1, wherein at least one of the start-up voltage (Ve(t)) and the shut-down voltage (Vs(t)) is pseudo-sinusoidal. 4. The electrically-controlled glazing unit as claimed in claim 3, wherein at least one of
the pseudo-sinusoidal start-up voltage (Ve(t)) and the sinusoidal AC voltage (Vnom(t)) have frequencies that are substantially identical, and the shut-down voltage (Vs(t)) and the sinusoidal AC voltage (Vnom(t)) have frequencies that are substantially identical. 5. The electrically-controlled glazing unit as claimed in claim 3, wherein the frequency of the pseudo-sinusoidal voltage is in the range between 40 Hz and 5 kHz. 6. The electrically-controlled glazing unit as claimed in claim 1, wherein the start-up voltage (Ve(t)) is one of polynomial and linear. 7. The electrically-controlled glazing unit as claimed in claim 1, wherein, at the end of the start-up period (Ton), the haze of the electrically-controlled glazing unit is less than 10%. 8. The electrically-controlled glazing unit as claimed in claim 1, wherein the electrical power supply comprises means for adjusting the start-up period (Ton). 9. A method for supplying electrical power to a liquid crystal electrically-controlled glazing unit comprising:
enabling an electrical power supply connected to at least one of a first electrode and a second electrode between which is disposed a liquid crystal element configured to transform from a diffusing state to at least one of a transparent state and a colored state; and applying to the glazing unit a start-up voltage (Ve(t)) whose amplitude progressively increases from zero up to a sinusoidal AC operating amplitude (V0) over a start-up period of time (Ton) of at least 0.1 seconds. 10. The method as claimed in claim 9, further comprising adjusting the start-up period (Ton). 11. The method as claimed in claim 9, further comprising:
disabling of the electrical power supply; and applying to the glazing unit a shut-down voltage (Vs(t)) whose amplitude decreases progressively from the operating amplitude (V0) down to zero over a shut-down period of time (Toff) of at least 0.1 seconds. 12. A device for supplying power to an electrically-controlled glazing unit comprising:
a switch connected to a programmable controller that is configured to control an electrical power supply connected to at least one of a first electrode and a second electrode between which is disposed a liquid crystal element configured to transform from a diffusing state to at least one of a transparent state and a colored state, wherein the controller is configured to progressively increase, via onboard software, an amplitude of a start-up voltage (Ve(t)) from zero up to a sinusoidal AC operating amplitude (V0), over a start-up period of time (Ton) of at least 0.1 seconds beginning following the enabling of the switch. 13. The electrically-controlled glazing unit as claimed in claim 1, wherein the electrical power supply is configured to apply to the glazing unit both:
the start-up voltage (Ve(t)) whose amplitude progressively increases from zero up to the operating amplitude (V0), over the start-up period of time (Ton), and the shut-down voltage (Vs(t)) whose amplitude decreases progressively from the operating amplitude (V0) down to zero, over the shut-down period of time (Toff). 14. The electrically-controlled glazing unit as claimed in claim 13, wherein the electrical power supply is configured to both linearly increase the amplitude of the start-up voltage (Ve(t)) and linearly decrease the amplitude of the shut-down voltage (Vs(t)). | 2,800 |
11,687 | 11,687 | 15,330,417 | 2,832 | A method of generating hydro-electric energy utilizing a conduit located beneath the surface of a river or stream to feed water into a hydro-electric turbine, eliminating the need to build costly and time-consuming structures such as dams and locks. | 1. A method of generating hydro-electric energy utilizing a conduit located at least partially beneath the surface of a river or stream to feed water into a hydro-electric turbine eliminating the need to build costly and time-consuming structures such as dams and locks. 2. The method of claim 1 wherein the conduit is positioned in the direction of river water flow with the water inlet end of the conduit upstream and at a higher elevation than the downstream end of the conduit which feeds water into a hydro-electric turbine. 3. The method of claim 1 wherein the upstream water inlet end of the conduit is positioned to be near the river water surface and the downstream end of the conduit is attached to the hydro electric turbine which is below the river surface. 4. The method of claim 1 wherein a semi-circular coffer dam is used at the inlet end of the conduit to utilize river flow rate to increase river water surface elevation at the inlet end of the conduit and thereby increase the head pressure at the hydro-electric turbine. 5. The method of claim 1 wherein the conduit can have any cross-sectional shape including the following shapes: circular, oval, rectangular and square. 6. The method of claim 1 wherein the conduit can be made of any material including plastic and metal. 7. The method of claim 1 wherein the conduit is seamless. 8. The method of claim 1 wherein the conduit is seamed in any direction including seams parallel and/or perpendicular to the water flow inside the conduit. 9. The method of claim 1 wherein the conduit is made from two or more flat sheets of material seamed along its length on both sides parallel to the water flow inside the conduit. 10. The method of claim 1 wherein the conduit can have multiple inlets and/or multiple exits feeding multiple hydro-electric turbines. 11. The method of claim 1 wherein the conduit is attached to the bottom or shoreline of a river or stream. 12. The method of claim 1 wherein the elevation of the inlet end of the conduit is mechanically adjustable to maximize the turbine head pressure at various river levels. 13. The method of claim 1 wherein the elevation of the inlet end of the conduit is controlled by floatation. 14. The method of claim 1 wherein the hydro-electric turbine is positioned to be above the downstream river water surface elevation and below the elevation of the conduit inlet. | A method of generating hydro-electric energy utilizing a conduit located beneath the surface of a river or stream to feed water into a hydro-electric turbine, eliminating the need to build costly and time-consuming structures such as dams and locks.1. A method of generating hydro-electric energy utilizing a conduit located at least partially beneath the surface of a river or stream to feed water into a hydro-electric turbine eliminating the need to build costly and time-consuming structures such as dams and locks. 2. The method of claim 1 wherein the conduit is positioned in the direction of river water flow with the water inlet end of the conduit upstream and at a higher elevation than the downstream end of the conduit which feeds water into a hydro-electric turbine. 3. The method of claim 1 wherein the upstream water inlet end of the conduit is positioned to be near the river water surface and the downstream end of the conduit is attached to the hydro electric turbine which is below the river surface. 4. The method of claim 1 wherein a semi-circular coffer dam is used at the inlet end of the conduit to utilize river flow rate to increase river water surface elevation at the inlet end of the conduit and thereby increase the head pressure at the hydro-electric turbine. 5. The method of claim 1 wherein the conduit can have any cross-sectional shape including the following shapes: circular, oval, rectangular and square. 6. The method of claim 1 wherein the conduit can be made of any material including plastic and metal. 7. The method of claim 1 wherein the conduit is seamless. 8. The method of claim 1 wherein the conduit is seamed in any direction including seams parallel and/or perpendicular to the water flow inside the conduit. 9. The method of claim 1 wherein the conduit is made from two or more flat sheets of material seamed along its length on both sides parallel to the water flow inside the conduit. 10. The method of claim 1 wherein the conduit can have multiple inlets and/or multiple exits feeding multiple hydro-electric turbines. 11. The method of claim 1 wherein the conduit is attached to the bottom or shoreline of a river or stream. 12. The method of claim 1 wherein the elevation of the inlet end of the conduit is mechanically adjustable to maximize the turbine head pressure at various river levels. 13. The method of claim 1 wherein the elevation of the inlet end of the conduit is controlled by floatation. 14. The method of claim 1 wherein the hydro-electric turbine is positioned to be above the downstream river water surface elevation and below the elevation of the conduit inlet. | 2,800 |
11,688 | 11,688 | 14,806,303 | 2,819 | A semiconductor device includes a semiconductor module having a heat conductive portion formed of metal and also having a molded resin having a surface at which the heat conductive portion is exposed, a cooling body secured to the semiconductor module by means of bonding material, and heat conductive material formed between and thermally coupling the heat conductive portion and the cooling body. | 1. A semiconductor device comprising:
a semiconductor module having a heat conductive portion formed of metal and also having a molded resin having a surface at which said heat conductive portion is exposed; a cooling body secured to said semiconductor module by means of bonding material; and heat conductive material formed between and thermally coupling said heat conductive portion and said cooling body, wherein said cooling body has a cooling body groove formed therein, and said heat conductive material is separated from said bonding material by said cooling body groove. 2. The semiconductor device according to claim 1, wherein said bonding material is formed to extend to cover a side surface of said molded resin. 3. The semiconductor device according to claim 1, wherein:
said molded resin has a resin groove formed in a surface thereof facing said cooling body; and said bonding material is formed to fill said resin groove. 4. The semiconductor device according to claim 1, wherein:
said bonding material is in contact with said molded resin; and the surface of said molded resin in contact with said bonding material has a greater surface roughness than the surfaces of said molded resin which are not in contact with said bonding material. 5. The semiconductor device according to claim 1, wherein:
said bonding material is in contact with said molded resin; and the portion of said molded resin in contact with said bonding material is more hydrophilic than the portions of said molded resin which are not in contact with said bonding material. 6. A method of manufacturing a semiconductor device, comprising the steps of:
forming heat conductive material on a surface of a cooling body; forming bonding material on said surface of said cooling body, said bonding material having a projection; forming a resin groove in a molded resin of a semiconductor module having a heat conductive portion which is formed of metal and which is exposed at a surface of said molded resin; and integrally securing said cooling body and said semiconductor module together in such a manner that said projection is in contact with an inner wall of said resin groove, and that said heat conductive portion overlaps and is in contact with said heat conductive material. 7. A semiconductor device comprising:
a semiconductor module having a heat conductive portion formed of metal and also having a molded resin, said heat conductive portion being projected from the molded resin on a surface of the semiconductor module; a cooling body secured to said semiconductor module by a bonding material made from an insulating material that completely surrounds the projected portion of the heat conductive portion; and heat conductive material formed between and thermally coupling said heat conductive portion and said cooling body. 8. A semiconductor device comprising:
a semiconductor module having a heat conductive portion formed of metal and also having a molded resin, said heat conductive portion being exposed from the molded resin and a surface plane of the heat conductive portion is arranged outside a surface plane of the molded resin; a cooling body secured to said semiconductor module by a bonding material made from an insulating material that completely surrounds the heat conductive portion in the surface plane of the head conductive portion; and heat conductive material formed between and thermally coupling said heat conductive portion and said cooling body. | A semiconductor device includes a semiconductor module having a heat conductive portion formed of metal and also having a molded resin having a surface at which the heat conductive portion is exposed, a cooling body secured to the semiconductor module by means of bonding material, and heat conductive material formed between and thermally coupling the heat conductive portion and the cooling body.1. A semiconductor device comprising:
a semiconductor module having a heat conductive portion formed of metal and also having a molded resin having a surface at which said heat conductive portion is exposed; a cooling body secured to said semiconductor module by means of bonding material; and heat conductive material formed between and thermally coupling said heat conductive portion and said cooling body, wherein said cooling body has a cooling body groove formed therein, and said heat conductive material is separated from said bonding material by said cooling body groove. 2. The semiconductor device according to claim 1, wherein said bonding material is formed to extend to cover a side surface of said molded resin. 3. The semiconductor device according to claim 1, wherein:
said molded resin has a resin groove formed in a surface thereof facing said cooling body; and said bonding material is formed to fill said resin groove. 4. The semiconductor device according to claim 1, wherein:
said bonding material is in contact with said molded resin; and the surface of said molded resin in contact with said bonding material has a greater surface roughness than the surfaces of said molded resin which are not in contact with said bonding material. 5. The semiconductor device according to claim 1, wherein:
said bonding material is in contact with said molded resin; and the portion of said molded resin in contact with said bonding material is more hydrophilic than the portions of said molded resin which are not in contact with said bonding material. 6. A method of manufacturing a semiconductor device, comprising the steps of:
forming heat conductive material on a surface of a cooling body; forming bonding material on said surface of said cooling body, said bonding material having a projection; forming a resin groove in a molded resin of a semiconductor module having a heat conductive portion which is formed of metal and which is exposed at a surface of said molded resin; and integrally securing said cooling body and said semiconductor module together in such a manner that said projection is in contact with an inner wall of said resin groove, and that said heat conductive portion overlaps and is in contact with said heat conductive material. 7. A semiconductor device comprising:
a semiconductor module having a heat conductive portion formed of metal and also having a molded resin, said heat conductive portion being projected from the molded resin on a surface of the semiconductor module; a cooling body secured to said semiconductor module by a bonding material made from an insulating material that completely surrounds the projected portion of the heat conductive portion; and heat conductive material formed between and thermally coupling said heat conductive portion and said cooling body. 8. A semiconductor device comprising:
a semiconductor module having a heat conductive portion formed of metal and also having a molded resin, said heat conductive portion being exposed from the molded resin and a surface plane of the heat conductive portion is arranged outside a surface plane of the molded resin; a cooling body secured to said semiconductor module by a bonding material made from an insulating material that completely surrounds the heat conductive portion in the surface plane of the head conductive portion; and heat conductive material formed between and thermally coupling said heat conductive portion and said cooling body. | 2,800 |
11,689 | 11,689 | 15,959,378 | 2,876 | A card reader (data read-out device) causes an image display section to display an image that indicates a predetermined portion on a display surface of a display panel, as a portion where a non-contact IC card (recording medium) is to be close. An antenna for making communications with a non-contact IC card is arranged at a portion located at the rear side of the predetermined portion on a rear surface of the display panel. In a case where a user brings a non-contact IC card close to the predetermined portion on the display surface presented as an image, the card reader reads out data from a non-contact IC card wirelessly by using an antenna. A user can identify a portion where a recording medium is to be brought close without turning his/her gaze away from the display surface of the card reader. Therefore, it is possible to bring a recording medium close to a proper position so as to enable reading out data. | 1. A data processing device, comprising:
a display unit including a display surface; and a processing unit configured to process data stored in a mobile device wirelessly, wherein the display unit displays an image indicating a location which is on the display surface and to which the mobile device is to be made close, and the processing unit processes data stored in the mobile device being close to the location. 2. The data processing device according to claim 1, wherein
the display unit displays an image indicating a timing at which the mobile device is to be made close to the location. 3. The data processing device according to claim 1, wherein
the display unit displays an image instructing to remove the mobile device from the location. 4. The data processing device according to claim 1, wherein
the display unit displays an image indicating a direction in which the mobile device close to the location is to face. 5. The data processing device according to claim 1, wherein
the processing unit reads out data stored in the mobile device and writes data to the mobile device. 6. A method for processing data stored in a mobile device, comprising:
displaying an image indicating a location which is on a display surface and to which a mobile device is to be made close; and processing data stored in the mobile device being close to the location wirelessly. | A card reader (data read-out device) causes an image display section to display an image that indicates a predetermined portion on a display surface of a display panel, as a portion where a non-contact IC card (recording medium) is to be close. An antenna for making communications with a non-contact IC card is arranged at a portion located at the rear side of the predetermined portion on a rear surface of the display panel. In a case where a user brings a non-contact IC card close to the predetermined portion on the display surface presented as an image, the card reader reads out data from a non-contact IC card wirelessly by using an antenna. A user can identify a portion where a recording medium is to be brought close without turning his/her gaze away from the display surface of the card reader. Therefore, it is possible to bring a recording medium close to a proper position so as to enable reading out data.1. A data processing device, comprising:
a display unit including a display surface; and a processing unit configured to process data stored in a mobile device wirelessly, wherein the display unit displays an image indicating a location which is on the display surface and to which the mobile device is to be made close, and the processing unit processes data stored in the mobile device being close to the location. 2. The data processing device according to claim 1, wherein
the display unit displays an image indicating a timing at which the mobile device is to be made close to the location. 3. The data processing device according to claim 1, wherein
the display unit displays an image instructing to remove the mobile device from the location. 4. The data processing device according to claim 1, wherein
the display unit displays an image indicating a direction in which the mobile device close to the location is to face. 5. The data processing device according to claim 1, wherein
the processing unit reads out data stored in the mobile device and writes data to the mobile device. 6. A method for processing data stored in a mobile device, comprising:
displaying an image indicating a location which is on a display surface and to which a mobile device is to be made close; and processing data stored in the mobile device being close to the location wirelessly. | 2,800 |
11,690 | 11,690 | 15,895,610 | 2,822 | A gas is ionized into a plasma. A compound of a dopant is mixed into the plasma, forming a mixed plasma. Using a semiconductor device fabrication system, a layer of III-V material is exposed to the mixed plasma to dope the layer with the dopant up to a depth in the layer, forming a shallow doped portion of the layer. The depth of the dopant is controlled by a second layer of the dopant formed at the shallow doped portion of the layer. The second layer is exposed to a solution, where the solution is prepared to erode the dopant in the second layer at a first rate. After an elapsed period, the solution is removed from the second layer, wherein the elapsed period is insufficient to erode a total depth of the layer and the shallow doped portion by more than a tolerance erosion amount. | 1. A computer usable program product comprising one or more computer-readable storage devices, and program instructions stored on at least one of the one or more storage devices, the stored program instructions comprising:
program instructions to ionize a gas into a plasma; program instructions to mix a compound of a dopant into the plasma, forming a mixed plasma; program instructions to expose, using a semiconductor device fabrication system, a layer of III-V material to the mixed plasma to dope the layer with the dopant up to a depth in the layer, forming a shallow doped portion of the layer; program instructions to control the depth of the dopant by a second layer of the dopant formed at the shallow doped portion of the layer; program instructions to expose the second layer to a solution, the solution prepared to erode the dopant in the second layer at a first rate; and program instructions to remove, after an elapsed period, the solution from the second layer, wherein the elapsed period is insufficient to erode a total depth of the layer and the shallow doped portion by more than a tolerance erosion amount. 2. The computer usable program product of claim 1, further comprising:
program instructions to compute, using a processor and a memory, the elapsed period as a function of the temperature. 3. The computer usable program product of claim 2, wherein the function is an inverse relationship function. 4. The computer usable program product of claim 1, wherein the computer usable code is stored in a computer readable storage device in a data processing system, and wherein the computer usable code is transferred over a network from a remote data processing system. 5. The computer usable program product of claim 1, wherein the computer usable code is stored in a computer readable storage device in a server data processing system, and wherein the computer usable code is downloaded over a network to a remote data processing system for use in a computer readable storage device associated with the remote data processing system. 6. The computer usable program product of claim 1, wherein the solution is heated to a temperature. 7. The computer usable program product of claim 6, wherein the temperature is in a range that includes sixty degrees Celsius. 8. The computer usable program product of claim 1, wherein the solution comprises Tetra Methyl Ammonium Hydroxide (TMAH) that has been diluted to a ratio. 9. The computer usable program product of claim 8, wherein the ratio is a percentage range that includes twenty-five percent. 10. The computer usable program product of claim 1, further comprising:
program instructions to adjust an amount of time the layer is exposed to the mixed plasma to adjust an amount of the dopant in the second layer. 11. The computer usable program product of claim 1, further comprising:
program instructions to deposit, using the mixed plasma, the second layer of the dopant over the doped portion of the layer. 12. The computer usable program product of claim 1, further comprising:
program instructions to adjust an amount of the compound mixed into the plasma to adjust a speed of depositing the second layer. 13. The computer usable program product of claim 1, wherein the shallow doped portion increases an electron mobility in the layer up to a threshold level. 14. The computer usable program product of claim 1, further comprising:
program instructions to remove, as a part of the exposing the layer to the mixed plasma, oxygen from an oxide molecule in the layer, wherein the removing the oxygen causes the dopant to reach the depth. 15. The computer usable program product of claim 1, wherein the dopant is Silicon, and wherein the compound is Silane. 16. The computer usable program product of claim 1, wherein the gas is one of Argon and Helium. | A gas is ionized into a plasma. A compound of a dopant is mixed into the plasma, forming a mixed plasma. Using a semiconductor device fabrication system, a layer of III-V material is exposed to the mixed plasma to dope the layer with the dopant up to a depth in the layer, forming a shallow doped portion of the layer. The depth of the dopant is controlled by a second layer of the dopant formed at the shallow doped portion of the layer. The second layer is exposed to a solution, where the solution is prepared to erode the dopant in the second layer at a first rate. After an elapsed period, the solution is removed from the second layer, wherein the elapsed period is insufficient to erode a total depth of the layer and the shallow doped portion by more than a tolerance erosion amount.1. A computer usable program product comprising one or more computer-readable storage devices, and program instructions stored on at least one of the one or more storage devices, the stored program instructions comprising:
program instructions to ionize a gas into a plasma; program instructions to mix a compound of a dopant into the plasma, forming a mixed plasma; program instructions to expose, using a semiconductor device fabrication system, a layer of III-V material to the mixed plasma to dope the layer with the dopant up to a depth in the layer, forming a shallow doped portion of the layer; program instructions to control the depth of the dopant by a second layer of the dopant formed at the shallow doped portion of the layer; program instructions to expose the second layer to a solution, the solution prepared to erode the dopant in the second layer at a first rate; and program instructions to remove, after an elapsed period, the solution from the second layer, wherein the elapsed period is insufficient to erode a total depth of the layer and the shallow doped portion by more than a tolerance erosion amount. 2. The computer usable program product of claim 1, further comprising:
program instructions to compute, using a processor and a memory, the elapsed period as a function of the temperature. 3. The computer usable program product of claim 2, wherein the function is an inverse relationship function. 4. The computer usable program product of claim 1, wherein the computer usable code is stored in a computer readable storage device in a data processing system, and wherein the computer usable code is transferred over a network from a remote data processing system. 5. The computer usable program product of claim 1, wherein the computer usable code is stored in a computer readable storage device in a server data processing system, and wherein the computer usable code is downloaded over a network to a remote data processing system for use in a computer readable storage device associated with the remote data processing system. 6. The computer usable program product of claim 1, wherein the solution is heated to a temperature. 7. The computer usable program product of claim 6, wherein the temperature is in a range that includes sixty degrees Celsius. 8. The computer usable program product of claim 1, wherein the solution comprises Tetra Methyl Ammonium Hydroxide (TMAH) that has been diluted to a ratio. 9. The computer usable program product of claim 8, wherein the ratio is a percentage range that includes twenty-five percent. 10. The computer usable program product of claim 1, further comprising:
program instructions to adjust an amount of time the layer is exposed to the mixed plasma to adjust an amount of the dopant in the second layer. 11. The computer usable program product of claim 1, further comprising:
program instructions to deposit, using the mixed plasma, the second layer of the dopant over the doped portion of the layer. 12. The computer usable program product of claim 1, further comprising:
program instructions to adjust an amount of the compound mixed into the plasma to adjust a speed of depositing the second layer. 13. The computer usable program product of claim 1, wherein the shallow doped portion increases an electron mobility in the layer up to a threshold level. 14. The computer usable program product of claim 1, further comprising:
program instructions to remove, as a part of the exposing the layer to the mixed plasma, oxygen from an oxide molecule in the layer, wherein the removing the oxygen causes the dopant to reach the depth. 15. The computer usable program product of claim 1, wherein the dopant is Silicon, and wherein the compound is Silane. 16. The computer usable program product of claim 1, wherein the gas is one of Argon and Helium. | 2,800 |
11,691 | 11,691 | 15,408,534 | 2,862 | A method is provided. The method comprises: initializing at least one non-linear filter configured to provide at least one predictive measurement estimate probability density function; obtaining measurement data; determining if the measurement data is consistent; and if the measurement data is consistent, then estimating at least one state parameter with the at least one non-linear filter using the measurement data. | 1. A system, comprising:
at least one sensor; a processing system comprising a memory coupled to a processor; wherein the processing system is configured to be coupled to the at least one sensor; wherein the memory comprises a consistency test, at least one model, measurement data, and an estimator; wherein the measurement data comprises data measured by the at least one sensor; wherein the estimator comprises at least one non-linear filter which is configured to provide at least one predictive measurement probability density function (PDF); and wherein the estimator is configured to generate the at least one predictive measurement estimate PDF, and the consistency test is configured to determine if the measurement data is within at least one allowable area of the at least one predictive measurement estimate PDF. 2. The system of claim 1, wherein the at least one non-linear filter comprises at least one of a point mass filter, a particle filter, and a Gaussian sum filter. 3. The system of claim 1, wherein the at least one allowable area comprises:
{circumflex over (z)} q1,k|k-1 ≤z k ≤{circumflex over (z)} q2,k|k-1; where {circumflex over (z)}q1,k|k-1 is a quantile, of the at least one predictive measurement PDF, for PFA/2; {circumflex over (z)}q2,k|k-1 is a quantile, of the at least one predictive measurement PDF, for 1−PFA/2; and PFA is a probability of a false alert. 4. The system of claim 3, wherein PFA is by a designer of the estimator. 5. The system of claim 1, wherein the at least one allowable area comprises at least one volume of p(zk|zk-1) above p(zk|zk-1)=g equals 1−PFA; and
wherein PFA is a probability of a false alert. 6. The system of claim 5, wherein PFA is at least one of: specified by a designer of the estimator and based upon the at least one predictive measurement estimate PDF. 7. The system of claim 5, wherein the at least one allowable area comprises Pk|k-1 (j)(αk (j))Δz≥g. 8. The system of claim 1, where the at least one allowable area is defined in a lookup table. 9. The system of claim 1, wherein if the measurement data determined to be within at least one allowable area, the estimator estimates at least one state parameter using measurement data. 10. A method, comprising:
initializing at least one non-linear filter configured to provide at least one predictive measurement estimate probability density function (PDF); obtaining measurement data; determining if the measurement data is consistent; and if the measurement data is consistent, then determining a filtered estimate of at least one state parameter with the at least one non-linear filter using the measurement data. 11. The method of claim 10, further comprising determining a predictive estimate, with the at least one non-linear filter, of at least one state parameter using the measurement data. 12. The method of claim 10, wherein determining if the measurement data is consistent comprises:
determining at least one predictive measurement PDF; determining at least one allowed area and at least one forbidden area in the at least one predictive measurement PDF; and determining if the measurement data is within the at least one allowed area of the at least one predictive measurement estimate PDF. 13. The method of claim 12, wherein determining the at least one predictive measurement PDF comprises determining
p(z k |z k-1)=∫p(z k ,x k |z k-1)dx k =∫p(z k |x k)p(x k |z k-1)dx k; and
wherein the at least one predictive measurement PDF p(zk|xk) is derived from a measurement equation. 14. The method of claim 12, wherein determining if the measurement data is within the at least one allowable area of the at least one predictive measurement estimate PDF comprises determining if the measurement data is within one allowable area of the at least one predictive measurement estimate PDF specified by:
{circumflex over (z)} q1,k|k-1 ≤z k ≤{circumflex over (z)} q2,k|k-1; where {circumflex over (z)}q1,k|k-1 is a quantile, of the predictive measurement PDF, for is PFA/2; {circumflex over (z)}q2,k|k-1 is a quantile, of the predictive measurement PDF, for is 1−PFA/2; and PFA is a probability of a false alert. 15. The method of claim 12, wherein determining if the measurement data is within the at least one allowable area of the at least one predictive measurement estimate PDF comprises determining if the measurement data is within the at least one allowable area, of the at least one predictive measurement estimate PDF, that is at least one volume of p(zk|zk-1) above p(zk|zk-1)=g equals 1−PFA; and
wherein PFA is a probability of a false alert. 16. The method of claim 15, wherein determining if the measurement data is within the at least one allowable area, of the at least one predictive measurement estimate PDF, that is at least one volume of p(zk|zk-1) above p(zk|zk-1)=g equals 1−PFA; and wherein P is a probability of a false alert comprises determining if the measurement data is within the at least one allowable area of the at least one predictive measurement PDF that comprises Pk|k-1 (j)(αk (j))Δz≥g. 17. The method of claim 12, determining if the measurement data is within the at least one allowable area of the at least one predictive measurement estimate PDF comprises determining if the measurement data is within the at least one allowable area, of the at least one predictive measurement estimate PDF, is defined in a lookup table. 18. The method of claim 10, wherein initializing the at least one non-linear filter configured to provide at least one predictive measurement estimate PDF wherein the at least one non-linear filter comprises initializing the at least one non-linear filter comprising at least one of a point mass filter, a particle filter, and a Gaussian sum filter. 19. A method, comprising:
initializing at least one non-linear filter configured to provide at least one predictive measurement estimate probability density function (PDF); obtaining measurement data; determining at least one predictive measurement PDF; determining at least one allowed area and at least one forbidden area in the at least one predictive measurement PDF; determining if the measurement data is within at least one allowable area of the at least one predictive measurement estimate PDF specified by:
{circumflex over (z)} q1,k|k-1 ≤z k ≤{circumflex over (z)} q2,k|k-1;
where {circumflex over (z)}q1,k|k-1 is a quantile, of the predictive measurement PDF, for PFA/2;
{circumflex over (z)}q2,k|k-1 is a quantile, of the predictive measurement PDF, for 1−PFA/2; and
PFA is a probability of a false alert; and
if the measurement data is consistent, then estimating at least one state parameter with the at least one non-linear filter using the measurement data. 20. The method of claim 19, wherein determining the at least one predictive measurement PDF comprises determining
p(z k |z k-1)=∫p(z k ,x k |z k-1)dx k =∫p(z k |x k)p(x k |z k-1)dx k; and
where the at least one predictive measurement PDF p(zk|xk) is derived from a measurement equation. | A method is provided. The method comprises: initializing at least one non-linear filter configured to provide at least one predictive measurement estimate probability density function; obtaining measurement data; determining if the measurement data is consistent; and if the measurement data is consistent, then estimating at least one state parameter with the at least one non-linear filter using the measurement data.1. A system, comprising:
at least one sensor; a processing system comprising a memory coupled to a processor; wherein the processing system is configured to be coupled to the at least one sensor; wherein the memory comprises a consistency test, at least one model, measurement data, and an estimator; wherein the measurement data comprises data measured by the at least one sensor; wherein the estimator comprises at least one non-linear filter which is configured to provide at least one predictive measurement probability density function (PDF); and wherein the estimator is configured to generate the at least one predictive measurement estimate PDF, and the consistency test is configured to determine if the measurement data is within at least one allowable area of the at least one predictive measurement estimate PDF. 2. The system of claim 1, wherein the at least one non-linear filter comprises at least one of a point mass filter, a particle filter, and a Gaussian sum filter. 3. The system of claim 1, wherein the at least one allowable area comprises:
{circumflex over (z)} q1,k|k-1 ≤z k ≤{circumflex over (z)} q2,k|k-1; where {circumflex over (z)}q1,k|k-1 is a quantile, of the at least one predictive measurement PDF, for PFA/2; {circumflex over (z)}q2,k|k-1 is a quantile, of the at least one predictive measurement PDF, for 1−PFA/2; and PFA is a probability of a false alert. 4. The system of claim 3, wherein PFA is by a designer of the estimator. 5. The system of claim 1, wherein the at least one allowable area comprises at least one volume of p(zk|zk-1) above p(zk|zk-1)=g equals 1−PFA; and
wherein PFA is a probability of a false alert. 6. The system of claim 5, wherein PFA is at least one of: specified by a designer of the estimator and based upon the at least one predictive measurement estimate PDF. 7. The system of claim 5, wherein the at least one allowable area comprises Pk|k-1 (j)(αk (j))Δz≥g. 8. The system of claim 1, where the at least one allowable area is defined in a lookup table. 9. The system of claim 1, wherein if the measurement data determined to be within at least one allowable area, the estimator estimates at least one state parameter using measurement data. 10. A method, comprising:
initializing at least one non-linear filter configured to provide at least one predictive measurement estimate probability density function (PDF); obtaining measurement data; determining if the measurement data is consistent; and if the measurement data is consistent, then determining a filtered estimate of at least one state parameter with the at least one non-linear filter using the measurement data. 11. The method of claim 10, further comprising determining a predictive estimate, with the at least one non-linear filter, of at least one state parameter using the measurement data. 12. The method of claim 10, wherein determining if the measurement data is consistent comprises:
determining at least one predictive measurement PDF; determining at least one allowed area and at least one forbidden area in the at least one predictive measurement PDF; and determining if the measurement data is within the at least one allowed area of the at least one predictive measurement estimate PDF. 13. The method of claim 12, wherein determining the at least one predictive measurement PDF comprises determining
p(z k |z k-1)=∫p(z k ,x k |z k-1)dx k =∫p(z k |x k)p(x k |z k-1)dx k; and
wherein the at least one predictive measurement PDF p(zk|xk) is derived from a measurement equation. 14. The method of claim 12, wherein determining if the measurement data is within the at least one allowable area of the at least one predictive measurement estimate PDF comprises determining if the measurement data is within one allowable area of the at least one predictive measurement estimate PDF specified by:
{circumflex over (z)} q1,k|k-1 ≤z k ≤{circumflex over (z)} q2,k|k-1; where {circumflex over (z)}q1,k|k-1 is a quantile, of the predictive measurement PDF, for is PFA/2; {circumflex over (z)}q2,k|k-1 is a quantile, of the predictive measurement PDF, for is 1−PFA/2; and PFA is a probability of a false alert. 15. The method of claim 12, wherein determining if the measurement data is within the at least one allowable area of the at least one predictive measurement estimate PDF comprises determining if the measurement data is within the at least one allowable area, of the at least one predictive measurement estimate PDF, that is at least one volume of p(zk|zk-1) above p(zk|zk-1)=g equals 1−PFA; and
wherein PFA is a probability of a false alert. 16. The method of claim 15, wherein determining if the measurement data is within the at least one allowable area, of the at least one predictive measurement estimate PDF, that is at least one volume of p(zk|zk-1) above p(zk|zk-1)=g equals 1−PFA; and wherein P is a probability of a false alert comprises determining if the measurement data is within the at least one allowable area of the at least one predictive measurement PDF that comprises Pk|k-1 (j)(αk (j))Δz≥g. 17. The method of claim 12, determining if the measurement data is within the at least one allowable area of the at least one predictive measurement estimate PDF comprises determining if the measurement data is within the at least one allowable area, of the at least one predictive measurement estimate PDF, is defined in a lookup table. 18. The method of claim 10, wherein initializing the at least one non-linear filter configured to provide at least one predictive measurement estimate PDF wherein the at least one non-linear filter comprises initializing the at least one non-linear filter comprising at least one of a point mass filter, a particle filter, and a Gaussian sum filter. 19. A method, comprising:
initializing at least one non-linear filter configured to provide at least one predictive measurement estimate probability density function (PDF); obtaining measurement data; determining at least one predictive measurement PDF; determining at least one allowed area and at least one forbidden area in the at least one predictive measurement PDF; determining if the measurement data is within at least one allowable area of the at least one predictive measurement estimate PDF specified by:
{circumflex over (z)} q1,k|k-1 ≤z k ≤{circumflex over (z)} q2,k|k-1;
where {circumflex over (z)}q1,k|k-1 is a quantile, of the predictive measurement PDF, for PFA/2;
{circumflex over (z)}q2,k|k-1 is a quantile, of the predictive measurement PDF, for 1−PFA/2; and
PFA is a probability of a false alert; and
if the measurement data is consistent, then estimating at least one state parameter with the at least one non-linear filter using the measurement data. 20. The method of claim 19, wherein determining the at least one predictive measurement PDF comprises determining
p(z k |z k-1)=∫p(z k ,x k |z k-1)dx k =∫p(z k |x k)p(x k |z k-1)dx k; and
where the at least one predictive measurement PDF p(zk|xk) is derived from a measurement equation. | 2,800 |
11,692 | 11,692 | 15,783,299 | 2,886 | One example includes fiber optic gyroscope (FOG) assembly. The FOG assembly includes a spool comprising a flange. The FOG assembly also includes an optical fiber comprising an optical fiber coil portion that is counter-wound in a first orientation and a second orientation opposite the first orientation. The optical fiber portion can be coupled to the flange. The optical fiber further includes a loopback portion with respect to the first orientation that is secured to the flange. | 1. A fiber optic gyroscope (FOG) assembly comprising:
a spool comprising a flange; and an optical fiber comprising an optical fiber coil portion that is counter-wound in a first orientation and a second orientation opposite the first orientation, the optical fiber portion being coupled to the flange, the optical fiber further comprising a loopback portion with respect to the first orientation that is secured to the flange. 2. The FOG assembly of claim 1, wherein the optical fiber coil is coupled to a first surface of the flange, and wherein the flange further comprises a second surface opposite the first surface, wherein the loopback portion is coupled to the second surface of the flange. 3. The FOG assembly of claim 2, wherein the optical fiber further comprises a first transition portion associated with the first orientation, a second transition portion associated with the second orientation, and a longitudinal coupling portion that are secured to the second surface of the flange, wherein the first and second transition portions of the optical fiber are secured to the second surface of the flange and are arranged to be approximately symmetrically arranged with each other on the flange. 4. The FOG assembly of claim 3, wherein the flange further comprises:
a first notch arranged at a periphery of the flange and being configured to receive the first transition portion of the optical fiber extending from the optical fiber coil portion from the first surface of the flange to the second surface of the flange; and a second notch arranged at the periphery of the flange and being configured to receive the second transition portion of the optical fiber extending from the optical fiber coil portion from the first surface of the flange to the second surface of the flange. 5. The FOG assembly of claim 3, wherein the loopback portion comprises at least a portion of the first transition portion and the longitudinal coupling portion. 6. The FOG assembly of claim 1, wherein the flange comprises a groove preform configured to receive and secure the optical fiber along a length of the groove preform with respect to at least the loopback portion. 7. The FOG assembly of claim 6, further comprising a buffer material layer disposed on the flange, wherein the groove preform is formed in the buffer material layer to receive the optical fiber for securing the optical fiber comprising the loopback portion to the flange. 8. The FOG assembly of claim 1, wherein the optical fiber further comprises a first transition portion associated with the first orientation, a second transition portion associated with the second orientation, and a longitudinal coupling portion that are secured to the second surface of the flange, wherein the first and second transition portions of the optical fiber are arranged to be approximately symmetrically arranged with each other on the flange. 9. The FOG assembly of claim 1, further comprising an optical transceiver configured to generate an optical signal that is provided to each end of the optical fiber, wherein signal paths of the optical signal from each end of the optical fiber to a portion of the optical fiber in which a winding of the spool of the optical fiber reverses orientation is approximately equal. 10. A method of fabricating a fiber optic gyroscope (FOG) assembly, the method comprising:
forming a spool that includes a flange; forming an optical fiber into an optical fiber coil portion comprising a first orientation of the optical fiber and a second orientation of the optical fiber opposite the first orientation, the optical fiber further comprising a first transition portion extending from the optical fiber coil portion and being associated with the first orientation and a second transition portion extending from the optical fiber coil portion and being associated with the second orientation; coupling the optical fiber coil portion to the spool; and securing the first transition portion, the second transition portion, and a loopback portion of the optical fiber to the flange. 11. The method of claim 10, wherein forming the spool comprises forming the spool and the flange to be integral with respect to a fabrication material associated with each of the spool and the flange. 12. The method of claim 10, wherein coupling the optical fiber coil portion to a first surface of the flange, and wherein securing the first and second transition portions and the loopback portion of the optical fiber coil comprises securing the first transition portion, the second transition portion, and the loopback portion to a second surface of the flange opposite the first surface of the flange. 13. The method of claim 12, further comprising:
forming a first notch in a periphery of the flange, wherein securing the first transition portion to the second surface of the flange comprises extending the first transition portion from the optical fiber coil portion on the first surface of the flange to the second surface of the flange via the first notch; and forming a second notch in the periphery of the flange, wherein securing the second transition portion to the second surface of the flange comprises extending the second transition portion from the optical fiber coil portion on the first surface of the flange to the second surface of the flange via the second notch. 14. The method of claim 10, wherein the securing the first and second transition portions and the loopback portion of the optical fiber coil comprises securing the first and second transition portions such that the first and second transition portions of the optical fiber are arranged to be approximately symmetrically arranged with respect to each other on the flange between the optical coil portion and a longitudinal coupling portion of the optical fiber. 15. The method of claim 10, further comprising:
depositing a buffer material on the flange; and forming a groove preform in the buffer material, wherein securing the first and second transition portions and the loopback portion of the optical fiber coil comprises securing the first transition portion, the second transition portion, and the loopback portion of the optical fiber to the flange in the groove preform. 16. A fiber optic gyroscope (FOG) assembly comprising:
a spool comprising a flange; a buffer material coupled to the flange, the buffer material comprising a groove preform patterned into the buffer material; and an optical fiber comprising an optical fiber coil portion that is counter-wound in a first orientation and a second orientation opposite the first orientation, the optical fiber portion being coupled to the flange, the optical fiber further comprising a loopback portion with respect to the first orientation that is secured to the flange via the groove preform. 17. The FOG assembly of claim 16, wherein the optical fiber coil is coupled to a first surface of the flange, and wherein the flange further comprises a second surface opposite the first surface, wherein the loopback portion is coupled to the second surface of the flange. 18. The FOG assembly of claim 17, wherein the optical fiber further comprises a first transition portion associated with the first orientation, a second transition portion associated with the second orientation, and a longitudinal coupling portion that are secured to the second surface of the flange, wherein the first and second transition portions of the optical fiber are secured to the second surface of the flange and are arranged to be approximately symmetrically arranged with each other on the flange. 19. The FOG assembly of claim 18, wherein the flange further comprises:
a first notch arranged at a periphery of the flange and being configured to receive the first transition portion of the optical fiber extending from the optical fiber coil portion from the first surface of the flange to the second surface of the flange; and a second notch arranged at the periphery of the flange and being configured to receive the second transition portion of the optical fiber extending from the optical fiber coil portion from the first surface of the flange to the second surface of the flange. 20. The FOG assembly of claim 16, wherein the optical fiber further comprises a first transition portion associated with the first orientation, a second transition portion associated with the second orientation, and a longitudinal coupling portion that are secured to the second surface of the flange, wherein the first and second transition portions of the optical fiber are arranged to be approximately symmetrically arranged with each other on the flange. | One example includes fiber optic gyroscope (FOG) assembly. The FOG assembly includes a spool comprising a flange. The FOG assembly also includes an optical fiber comprising an optical fiber coil portion that is counter-wound in a first orientation and a second orientation opposite the first orientation. The optical fiber portion can be coupled to the flange. The optical fiber further includes a loopback portion with respect to the first orientation that is secured to the flange.1. A fiber optic gyroscope (FOG) assembly comprising:
a spool comprising a flange; and an optical fiber comprising an optical fiber coil portion that is counter-wound in a first orientation and a second orientation opposite the first orientation, the optical fiber portion being coupled to the flange, the optical fiber further comprising a loopback portion with respect to the first orientation that is secured to the flange. 2. The FOG assembly of claim 1, wherein the optical fiber coil is coupled to a first surface of the flange, and wherein the flange further comprises a second surface opposite the first surface, wherein the loopback portion is coupled to the second surface of the flange. 3. The FOG assembly of claim 2, wherein the optical fiber further comprises a first transition portion associated with the first orientation, a second transition portion associated with the second orientation, and a longitudinal coupling portion that are secured to the second surface of the flange, wherein the first and second transition portions of the optical fiber are secured to the second surface of the flange and are arranged to be approximately symmetrically arranged with each other on the flange. 4. The FOG assembly of claim 3, wherein the flange further comprises:
a first notch arranged at a periphery of the flange and being configured to receive the first transition portion of the optical fiber extending from the optical fiber coil portion from the first surface of the flange to the second surface of the flange; and a second notch arranged at the periphery of the flange and being configured to receive the second transition portion of the optical fiber extending from the optical fiber coil portion from the first surface of the flange to the second surface of the flange. 5. The FOG assembly of claim 3, wherein the loopback portion comprises at least a portion of the first transition portion and the longitudinal coupling portion. 6. The FOG assembly of claim 1, wherein the flange comprises a groove preform configured to receive and secure the optical fiber along a length of the groove preform with respect to at least the loopback portion. 7. The FOG assembly of claim 6, further comprising a buffer material layer disposed on the flange, wherein the groove preform is formed in the buffer material layer to receive the optical fiber for securing the optical fiber comprising the loopback portion to the flange. 8. The FOG assembly of claim 1, wherein the optical fiber further comprises a first transition portion associated with the first orientation, a second transition portion associated with the second orientation, and a longitudinal coupling portion that are secured to the second surface of the flange, wherein the first and second transition portions of the optical fiber are arranged to be approximately symmetrically arranged with each other on the flange. 9. The FOG assembly of claim 1, further comprising an optical transceiver configured to generate an optical signal that is provided to each end of the optical fiber, wherein signal paths of the optical signal from each end of the optical fiber to a portion of the optical fiber in which a winding of the spool of the optical fiber reverses orientation is approximately equal. 10. A method of fabricating a fiber optic gyroscope (FOG) assembly, the method comprising:
forming a spool that includes a flange; forming an optical fiber into an optical fiber coil portion comprising a first orientation of the optical fiber and a second orientation of the optical fiber opposite the first orientation, the optical fiber further comprising a first transition portion extending from the optical fiber coil portion and being associated with the first orientation and a second transition portion extending from the optical fiber coil portion and being associated with the second orientation; coupling the optical fiber coil portion to the spool; and securing the first transition portion, the second transition portion, and a loopback portion of the optical fiber to the flange. 11. The method of claim 10, wherein forming the spool comprises forming the spool and the flange to be integral with respect to a fabrication material associated with each of the spool and the flange. 12. The method of claim 10, wherein coupling the optical fiber coil portion to a first surface of the flange, and wherein securing the first and second transition portions and the loopback portion of the optical fiber coil comprises securing the first transition portion, the second transition portion, and the loopback portion to a second surface of the flange opposite the first surface of the flange. 13. The method of claim 12, further comprising:
forming a first notch in a periphery of the flange, wherein securing the first transition portion to the second surface of the flange comprises extending the first transition portion from the optical fiber coil portion on the first surface of the flange to the second surface of the flange via the first notch; and forming a second notch in the periphery of the flange, wherein securing the second transition portion to the second surface of the flange comprises extending the second transition portion from the optical fiber coil portion on the first surface of the flange to the second surface of the flange via the second notch. 14. The method of claim 10, wherein the securing the first and second transition portions and the loopback portion of the optical fiber coil comprises securing the first and second transition portions such that the first and second transition portions of the optical fiber are arranged to be approximately symmetrically arranged with respect to each other on the flange between the optical coil portion and a longitudinal coupling portion of the optical fiber. 15. The method of claim 10, further comprising:
depositing a buffer material on the flange; and forming a groove preform in the buffer material, wherein securing the first and second transition portions and the loopback portion of the optical fiber coil comprises securing the first transition portion, the second transition portion, and the loopback portion of the optical fiber to the flange in the groove preform. 16. A fiber optic gyroscope (FOG) assembly comprising:
a spool comprising a flange; a buffer material coupled to the flange, the buffer material comprising a groove preform patterned into the buffer material; and an optical fiber comprising an optical fiber coil portion that is counter-wound in a first orientation and a second orientation opposite the first orientation, the optical fiber portion being coupled to the flange, the optical fiber further comprising a loopback portion with respect to the first orientation that is secured to the flange via the groove preform. 17. The FOG assembly of claim 16, wherein the optical fiber coil is coupled to a first surface of the flange, and wherein the flange further comprises a second surface opposite the first surface, wherein the loopback portion is coupled to the second surface of the flange. 18. The FOG assembly of claim 17, wherein the optical fiber further comprises a first transition portion associated with the first orientation, a second transition portion associated with the second orientation, and a longitudinal coupling portion that are secured to the second surface of the flange, wherein the first and second transition portions of the optical fiber are secured to the second surface of the flange and are arranged to be approximately symmetrically arranged with each other on the flange. 19. The FOG assembly of claim 18, wherein the flange further comprises:
a first notch arranged at a periphery of the flange and being configured to receive the first transition portion of the optical fiber extending from the optical fiber coil portion from the first surface of the flange to the second surface of the flange; and a second notch arranged at the periphery of the flange and being configured to receive the second transition portion of the optical fiber extending from the optical fiber coil portion from the first surface of the flange to the second surface of the flange. 20. The FOG assembly of claim 16, wherein the optical fiber further comprises a first transition portion associated with the first orientation, a second transition portion associated with the second orientation, and a longitudinal coupling portion that are secured to the second surface of the flange, wherein the first and second transition portions of the optical fiber are arranged to be approximately symmetrically arranged with each other on the flange. | 2,800 |
11,693 | 11,693 | 15,897,367 | 2,887 | A card assembly includes an insulating planar body and a magnetic stripe assembly coupled with the planar body. The magnetic stripe assembly includes a magnetic layer configured to magnetically store information and a metal layer that provides at least one of a security feature, a decorative feature, or other functional feature. The metal layer has a small thickness such that the metal layer prevents conduction of electrostatic discharge (ESD) through the magnetic stripe assembly. | 1. A card assembly comprising:
an insulating planar body; and a magnetic stripe assembly coupled with the planar body, the magnetic stripe assembly including a magnetic layer configured to magnetically store information and a metal layer that provides at least one of a security feature, a decorative feature, or other functional feature, wherein the metal layer has a small thickness such that the metal layer prevents conduction of electrostatic discharge (ESD) through the magnetic stripe assembly. 2. The card assembly of claim 1, wherein the metal layer is formed from one or more of aluminum, zinc, gallium, indium, cadmium, copper, nickel, cobalt, iron, magnesium, platinum, tin, chromium, silver, rhodium, or palladium. 3. The card assembly of claim 1, wherein the magnetic stripe assembly has one or more of a reflective mirror surface or a holographic effect. 4. The card assembly of claim 1, wherein the metal layer of the magnetic stripe assembly has an optical density of at least 0.25. 5. The card assembly of claim 1, wherein the metal layer of the magnetic stripe assembly has an optical density that is no greater than 4.0. 6. The card assembly of claim 1, wherein the metal layer is optically continuous without magnification from one edge of the planar body to an opposite edge of the planar body. 7. The card assembly of claim 1, wherein the metal layer does not include regularly spaced or arranged spaced-apart metal bodies. 8. The card assembly of claim 1, wherein the metal layer does not include a repeating arrangement of spaced-apart metal bodies. 9. A magnetic tape assembly comprising:
a magnetic coating layer configured to magnetically store information for a card assembly; and a metal layer that provides at least one of a security feature, a decorative feature, or other functional feature of the card assembly, the metal layer having a small thickness such that the metal layer prevents conduction of electrostatic discharge (ESD) through the card assembly. 10. The magnetic tape assembly of claim 9, wherein the metal layer is formed from one or more of aluminum, zinc, gallium, indium, cadmium, copper, nickel, cobalt, iron, magnesium, platinum, tin, chromium, silver, rhodium, or palladium. 11. The magnetic tape assembly of claim 9, wherein the metal layer provides one or more of a reflective mirror surface or a holographic effect. 12. The magnetic tape assembly of claim 9, wherein the metal layer of the magnetic stripe assembly has an optical density of at least 0.25. 13. The magnetic tape assembly of claim 9, wherein the metal layer of the magnetic stripe assembly has an optical density that is no greater than 4.0. 14. The magnetic tape assembly of claim 9, wherein the metal layer is optically continuous without magnification. 15. The magnetic tape assembly of claim 9, wherein the metal layer does not include regularly spaced or arranged spaced-apart metal bodies. 16. The magnetic tape assembly of claim 9, wherein the metal layer does not include a repeating arrangement of spaced-apart metal bodies. 17. A method comprising:
applying a metal layer to a magnetic tape assembly having a magnetic layer configured to magnetically store information for a card assembly, wherein the metal layer is applied to provide at least one of a security feature, a decorative feature, or other functional feature of the card assembly, the metal layer applied to have a small thickness such that the metal layer prevents conduction of electrostatic discharge (ESD) through the card assembly. 18. The method of claim 17, wherein the metal layer is formed from one or more of aluminum, zinc, gallium, indium, cadmium, copper, nickel, cobalt, iron, magnesium, platinum, tin, chromium, silver, rhodium, or palladium. 19. The method of claim 17, wherein the metal layer provides one or more of a reflective mirror surface or a holographic effect. 20. The method of claim 17, wherein the metal layer is applied to the magnetic tape assembly to have an optical density of at least 0.25. | A card assembly includes an insulating planar body and a magnetic stripe assembly coupled with the planar body. The magnetic stripe assembly includes a magnetic layer configured to magnetically store information and a metal layer that provides at least one of a security feature, a decorative feature, or other functional feature. The metal layer has a small thickness such that the metal layer prevents conduction of electrostatic discharge (ESD) through the magnetic stripe assembly.1. A card assembly comprising:
an insulating planar body; and a magnetic stripe assembly coupled with the planar body, the magnetic stripe assembly including a magnetic layer configured to magnetically store information and a metal layer that provides at least one of a security feature, a decorative feature, or other functional feature, wherein the metal layer has a small thickness such that the metal layer prevents conduction of electrostatic discharge (ESD) through the magnetic stripe assembly. 2. The card assembly of claim 1, wherein the metal layer is formed from one or more of aluminum, zinc, gallium, indium, cadmium, copper, nickel, cobalt, iron, magnesium, platinum, tin, chromium, silver, rhodium, or palladium. 3. The card assembly of claim 1, wherein the magnetic stripe assembly has one or more of a reflective mirror surface or a holographic effect. 4. The card assembly of claim 1, wherein the metal layer of the magnetic stripe assembly has an optical density of at least 0.25. 5. The card assembly of claim 1, wherein the metal layer of the magnetic stripe assembly has an optical density that is no greater than 4.0. 6. The card assembly of claim 1, wherein the metal layer is optically continuous without magnification from one edge of the planar body to an opposite edge of the planar body. 7. The card assembly of claim 1, wherein the metal layer does not include regularly spaced or arranged spaced-apart metal bodies. 8. The card assembly of claim 1, wherein the metal layer does not include a repeating arrangement of spaced-apart metal bodies. 9. A magnetic tape assembly comprising:
a magnetic coating layer configured to magnetically store information for a card assembly; and a metal layer that provides at least one of a security feature, a decorative feature, or other functional feature of the card assembly, the metal layer having a small thickness such that the metal layer prevents conduction of electrostatic discharge (ESD) through the card assembly. 10. The magnetic tape assembly of claim 9, wherein the metal layer is formed from one or more of aluminum, zinc, gallium, indium, cadmium, copper, nickel, cobalt, iron, magnesium, platinum, tin, chromium, silver, rhodium, or palladium. 11. The magnetic tape assembly of claim 9, wherein the metal layer provides one or more of a reflective mirror surface or a holographic effect. 12. The magnetic tape assembly of claim 9, wherein the metal layer of the magnetic stripe assembly has an optical density of at least 0.25. 13. The magnetic tape assembly of claim 9, wherein the metal layer of the magnetic stripe assembly has an optical density that is no greater than 4.0. 14. The magnetic tape assembly of claim 9, wherein the metal layer is optically continuous without magnification. 15. The magnetic tape assembly of claim 9, wherein the metal layer does not include regularly spaced or arranged spaced-apart metal bodies. 16. The magnetic tape assembly of claim 9, wherein the metal layer does not include a repeating arrangement of spaced-apart metal bodies. 17. A method comprising:
applying a metal layer to a magnetic tape assembly having a magnetic layer configured to magnetically store information for a card assembly, wherein the metal layer is applied to provide at least one of a security feature, a decorative feature, or other functional feature of the card assembly, the metal layer applied to have a small thickness such that the metal layer prevents conduction of electrostatic discharge (ESD) through the card assembly. 18. The method of claim 17, wherein the metal layer is formed from one or more of aluminum, zinc, gallium, indium, cadmium, copper, nickel, cobalt, iron, magnesium, platinum, tin, chromium, silver, rhodium, or palladium. 19. The method of claim 17, wherein the metal layer provides one or more of a reflective mirror surface or a holographic effect. 20. The method of claim 17, wherein the metal layer is applied to the magnetic tape assembly to have an optical density of at least 0.25. | 2,800 |
11,694 | 11,694 | 14,932,720 | 2,881 | A laser defense system may be used to generate a plasma shield for protecting a structure against a directed-energy source. The laser defense system may include a short pulsed laser which generates plasma in a plasma shield region between the structure and the directed-energy source. Because plasma is opaque to electromagnetic radiation, the laser signal emitted by the directed-energy source is absorbed by the plasma shield rather than striking the structure. | 1. A defense system comprising:
a pulsed laser source; and an optical control system configured to direct laser signals emitted by the pulsed laser source to generate a plasma shield in a defined plasma shield region located between a target structure and a directed-energy source in order to protect the target structure from energy emitted by the directed-energy source. 2. The defense system of claim 1, wherein the optical control system is configured to, during each pulse of the pulsed laser source, deflect a respective one of the laser signals to a defined sub-portion of the plasma shield region, wherein the plasma shield region is divided into a plurality of sub-portions. 3. The defense system of claim 2, wherein the optical control system is configured to, using a plurality of pulses of the pulsed laser source, generate the plasma shield region by rastering the pulsed laser source in a predefined pattern through the plurality of sub-portions. 4. The defense system of claim 3, wherein the optical control system further comprises a beam steering mechanism configured to deflect the laser signals to raster the pulsed laser source in the predefined pattern. 5. The defense system of claim 2, wherein the optical control system is configured to generate the plasma in multiple sub-portions of the plurality of sub-portions simultaneously by splitting a laser signal emitted during a single pulse of the pulsed laser source into separate laser signals that each focus onto a respective one of the multiple sub-portions. 6. The defense system of claim 5, wherein the optical control system comprises a lenslet configured to split the laser signal emitted during the single pulse into the separate laser signals. 7. The defense system of claim 1, further comprising a lens to focus the laser signals to establish the plasma shield region at a predefined distance from the target structure. 8. A laser defense system, comprising:
at least one sensor configured to detect electromagnetic radiation emitted by a directed-energy source; a laser source; and an optical control system configured to, in response to detecting the electromagnetic radiation, direct a laser signal emitted by the laser source to generate a plasma in a defined plasma shield region. 9. The laser defense system of claim 8, further comprising a plurality of sensors that includes the at least one sensor, wherein the plurality of sensors are disposed at different locations on a structure targeted by the directed-energy source. 10. The laser defense system of claim 8, wherein the laser source does not emit the laser signal until the electromagnetic radiation is detected using the at least one sensor. 11. The laser defense system of claim 8, wherein the laser source emits the laser signal before the electromagnetic radiation is detected using the at least one sensor. 12. The laser defense system of claim 8, wherein the optical control system is configured to establish the plasma shield region based on a location of the directed-energy source such that the plasma shield region is between the directed-energy source and a structure targeted by the directed-energy source. 13. The laser defense system of claim 8, wherein the laser source is a pulsed laser source and the plasma shield region is divided into a plurality of sub-portions, wherein the optical control system is configured to generate plasma in only one of the sub-portions during each pulse of the laser source. 14. The laser defense system of claim 8, wherein the laser source is a pulsed laser source and the plasma shield region is divided into a plurality of sub-portions, wherein the optical control system is configured to generate plasma in multiple sub-portions of the plurality of sub-portions during each pulse of the laser source. 15. A method, comprising:
detecting electromagnetic radiation emitted by a directed-energy source that strikes a structure; and generating, in response to detecting the electromagnetic radiation, plasma in a plasma shield region disposed between the directed-energy source and the structure. 16. The method of claim 15, further comprising:
identifying a location of the directed-energy source relative to the structure; and determining a location of the plasma shield region based on the location of the directed-energy source so that the plasma shield region is disposed between the directed-energy source and the structure. 17. The method of claim 15, wherein generating the plasma in the plasma shield region further comprises:
rastering a laser source generating the plasma in a predefined pattern to generate the plasma shield region, wherein the predefined pattern divides the plasma shield region into a plurality of sub-portions. 18. The method of claim 17, wherein generating the plasma in the plasma shield region further comprises:
repeating the predefined pattern using a pulsed laser source before the plasma in any one of the sub-portions completely disappears. 19. The method of claim 15, wherein generating the plasma in the plasma shield region further comprises:
splitting a laser signal into a plurality of separate laser signals; focusing each of the separate laser signals onto respective sub-portions of the plasma shield region, wherein the separate laser signals generate plasma in the sub-portions simultaneously. 20. The method of claim 19, wherein splitting the laser signal is performed using a lenslet disposed between a laser source emitting the laser signal and the plasma shield region. | A laser defense system may be used to generate a plasma shield for protecting a structure against a directed-energy source. The laser defense system may include a short pulsed laser which generates plasma in a plasma shield region between the structure and the directed-energy source. Because plasma is opaque to electromagnetic radiation, the laser signal emitted by the directed-energy source is absorbed by the plasma shield rather than striking the structure.1. A defense system comprising:
a pulsed laser source; and an optical control system configured to direct laser signals emitted by the pulsed laser source to generate a plasma shield in a defined plasma shield region located between a target structure and a directed-energy source in order to protect the target structure from energy emitted by the directed-energy source. 2. The defense system of claim 1, wherein the optical control system is configured to, during each pulse of the pulsed laser source, deflect a respective one of the laser signals to a defined sub-portion of the plasma shield region, wherein the plasma shield region is divided into a plurality of sub-portions. 3. The defense system of claim 2, wherein the optical control system is configured to, using a plurality of pulses of the pulsed laser source, generate the plasma shield region by rastering the pulsed laser source in a predefined pattern through the plurality of sub-portions. 4. The defense system of claim 3, wherein the optical control system further comprises a beam steering mechanism configured to deflect the laser signals to raster the pulsed laser source in the predefined pattern. 5. The defense system of claim 2, wherein the optical control system is configured to generate the plasma in multiple sub-portions of the plurality of sub-portions simultaneously by splitting a laser signal emitted during a single pulse of the pulsed laser source into separate laser signals that each focus onto a respective one of the multiple sub-portions. 6. The defense system of claim 5, wherein the optical control system comprises a lenslet configured to split the laser signal emitted during the single pulse into the separate laser signals. 7. The defense system of claim 1, further comprising a lens to focus the laser signals to establish the plasma shield region at a predefined distance from the target structure. 8. A laser defense system, comprising:
at least one sensor configured to detect electromagnetic radiation emitted by a directed-energy source; a laser source; and an optical control system configured to, in response to detecting the electromagnetic radiation, direct a laser signal emitted by the laser source to generate a plasma in a defined plasma shield region. 9. The laser defense system of claim 8, further comprising a plurality of sensors that includes the at least one sensor, wherein the plurality of sensors are disposed at different locations on a structure targeted by the directed-energy source. 10. The laser defense system of claim 8, wherein the laser source does not emit the laser signal until the electromagnetic radiation is detected using the at least one sensor. 11. The laser defense system of claim 8, wherein the laser source emits the laser signal before the electromagnetic radiation is detected using the at least one sensor. 12. The laser defense system of claim 8, wherein the optical control system is configured to establish the plasma shield region based on a location of the directed-energy source such that the plasma shield region is between the directed-energy source and a structure targeted by the directed-energy source. 13. The laser defense system of claim 8, wherein the laser source is a pulsed laser source and the plasma shield region is divided into a plurality of sub-portions, wherein the optical control system is configured to generate plasma in only one of the sub-portions during each pulse of the laser source. 14. The laser defense system of claim 8, wherein the laser source is a pulsed laser source and the plasma shield region is divided into a plurality of sub-portions, wherein the optical control system is configured to generate plasma in multiple sub-portions of the plurality of sub-portions during each pulse of the laser source. 15. A method, comprising:
detecting electromagnetic radiation emitted by a directed-energy source that strikes a structure; and generating, in response to detecting the electromagnetic radiation, plasma in a plasma shield region disposed between the directed-energy source and the structure. 16. The method of claim 15, further comprising:
identifying a location of the directed-energy source relative to the structure; and determining a location of the plasma shield region based on the location of the directed-energy source so that the plasma shield region is disposed between the directed-energy source and the structure. 17. The method of claim 15, wherein generating the plasma in the plasma shield region further comprises:
rastering a laser source generating the plasma in a predefined pattern to generate the plasma shield region, wherein the predefined pattern divides the plasma shield region into a plurality of sub-portions. 18. The method of claim 17, wherein generating the plasma in the plasma shield region further comprises:
repeating the predefined pattern using a pulsed laser source before the plasma in any one of the sub-portions completely disappears. 19. The method of claim 15, wherein generating the plasma in the plasma shield region further comprises:
splitting a laser signal into a plurality of separate laser signals; focusing each of the separate laser signals onto respective sub-portions of the plasma shield region, wherein the separate laser signals generate plasma in the sub-portions simultaneously. 20. The method of claim 19, wherein splitting the laser signal is performed using a lenslet disposed between a laser source emitting the laser signal and the plasma shield region. | 2,800 |
11,695 | 11,695 | 14,428,207 | 2,894 | A semiconductor device comprises the following: a wiring substrate having on one side a recessed section and a plurality of connection pads; a first semiconductor chip mounted in the recessed section; a second semiconductor chip that has a plurality of electrode pads on the surface of at least one end section (in this case, both ends) and that is laminated onto the first semiconductor chip so that at least one end section (in this case, both ends) protrudes from the first semiconductor chip; a plurality of wires that mutually and electrically connect the plurality of connection pads of the wiring substrate and the plurality of electrode pads of the second semiconductor chip. One end section of the second semiconductor chip extends beyond the inner surface of the recessed section and is supported by one side of the wiring substrate. | 1. A semiconductor device having:
a wiring substrate having, on one surface, a recessed portion and a plurality of connection pads; a first semiconductor chip mounted in the abovementioned recessed portion; a second semiconductor chip which has a plurality of electrode pads on an obverse surface of at least one end portion thereof, and which is stacked on the abovementioned first semiconductor chip in such a way that at least one end portion thereof projects out from the abovementioned first semiconductor chip; and a plurality of wires which electrically connect the plurality of connection pads on the abovementioned wiring substrate respectively to the abovementioned plurality of electrode pads on the abovementioned second semiconductor chip; wherein, the abovementioned one end portion of the abovementioned second semiconductor chip extends beyond an inside surface of the abovementioned recessed portion and is supported on one surface of the abovementioned wiring substrate. 2. The semiconductor device of claim 1, wherein the abovementioned wiring substrate has:
a lower substrate layer; and an upper substrate layer stacked on the abovementioned lower substrate layer; wherein, the abovementioned upper substrate layer has an open portion or a groove portion corresponding to the planar shape of the abovementioned first semiconductor chip, and the abovementioned recessed portion comprises the abovementioned lower substrate layer and the abovementioned open portion or the abovementioned groove portion. 3. The semiconductor device of claim 1, wherein the abovementioned recessed portion is filled with an adhesive member. 4. The semiconductor device of claim 1, having a sealing body made of resin, formed on the abovementioned wiring substrate in such a way as to cover the abovementioned first semiconductor chip and the abovementioned second semiconductor chip. 5. The semiconductor device of claim 1, wherein the abovementioned recessed portion extends as far as edges on two opposing sides of the abovementioned wiring substrate, and wherein the configuration is such that the abovementioned one end portion of the abovementioned second semiconductor chip projects out from the abovementioned first semiconductor chip toward a side other than the abovementioned two sides of the abovementioned wiring substrate. 6. The semiconductor device of claim 1, wherein the abovementioned first semiconductor chip is flip-chip connected to the abovementioned wiring substrate. 7. A method of manufacturing a semiconductor device, comprising:
(a) mounting a first semiconductor chip in a recessed portion of a wiring substrate having, on one surface, the abovementioned recessed portion and a plurality of connection pads; (b) stacking a second semiconductor chip, which has a plurality of electrode pads on an obverse surface of at least one end portion thereof, on the abovementioned first semiconductor chip in such a way that at least one end portion thereof projects out from the abovementioned first semiconductor chip; and (c) electrically connecting the plurality of connection pads on the abovementioned wiring substrate respectively, using wires, to the abovementioned plurality of electrode pads on the abovementioned second semiconductor chip;
wherein, abovementioned (b) comprises extending the abovementioned one end portion of the abovementioned second semiconductor chip beyond an inside surface of the abovementioned recessed portion and supporting it on one surface of the abovementioned wiring substrate. 8. The method of claim 7, wherein abovementioned (a) comprises:
forming the abovementioned wiring substrate by stacking on a lower substrate layer an upper substrate layer having an open portion or a groove portion corresponding to the planar shape of the abovementioned first semiconductor chip; and mounting the abovementioned first semiconductor chip in the abovementioned recessed portion comprising the abovementioned lower substrate layer and the abovementioned open portion or the abovementioned groove portion. 9. The method of claim 7, comprising:
(d) forming a sealing body on the abovementioned wiring substrate in such a way as to cover the abovementioned first semiconductor chip and the abovementioned second semiconductor chip. 10. The method of claim 7, wherein the abovementioned recessed portion extends as far as edges on two opposing sides of the abovementioned wiring substrate, and wherein abovementioned (b) comprises supporting the abovementioned one end portion of the abovementioned second semiconductor chip on one surface of the abovementioned wiring substrate in such a way that it projects out from the abovementioned first semiconductor chip toward a side other than the abovementioned two sides of the abovementioned wiring substrate. | A semiconductor device comprises the following: a wiring substrate having on one side a recessed section and a plurality of connection pads; a first semiconductor chip mounted in the recessed section; a second semiconductor chip that has a plurality of electrode pads on the surface of at least one end section (in this case, both ends) and that is laminated onto the first semiconductor chip so that at least one end section (in this case, both ends) protrudes from the first semiconductor chip; a plurality of wires that mutually and electrically connect the plurality of connection pads of the wiring substrate and the plurality of electrode pads of the second semiconductor chip. One end section of the second semiconductor chip extends beyond the inner surface of the recessed section and is supported by one side of the wiring substrate.1. A semiconductor device having:
a wiring substrate having, on one surface, a recessed portion and a plurality of connection pads; a first semiconductor chip mounted in the abovementioned recessed portion; a second semiconductor chip which has a plurality of electrode pads on an obverse surface of at least one end portion thereof, and which is stacked on the abovementioned first semiconductor chip in such a way that at least one end portion thereof projects out from the abovementioned first semiconductor chip; and a plurality of wires which electrically connect the plurality of connection pads on the abovementioned wiring substrate respectively to the abovementioned plurality of electrode pads on the abovementioned second semiconductor chip; wherein, the abovementioned one end portion of the abovementioned second semiconductor chip extends beyond an inside surface of the abovementioned recessed portion and is supported on one surface of the abovementioned wiring substrate. 2. The semiconductor device of claim 1, wherein the abovementioned wiring substrate has:
a lower substrate layer; and an upper substrate layer stacked on the abovementioned lower substrate layer; wherein, the abovementioned upper substrate layer has an open portion or a groove portion corresponding to the planar shape of the abovementioned first semiconductor chip, and the abovementioned recessed portion comprises the abovementioned lower substrate layer and the abovementioned open portion or the abovementioned groove portion. 3. The semiconductor device of claim 1, wherein the abovementioned recessed portion is filled with an adhesive member. 4. The semiconductor device of claim 1, having a sealing body made of resin, formed on the abovementioned wiring substrate in such a way as to cover the abovementioned first semiconductor chip and the abovementioned second semiconductor chip. 5. The semiconductor device of claim 1, wherein the abovementioned recessed portion extends as far as edges on two opposing sides of the abovementioned wiring substrate, and wherein the configuration is such that the abovementioned one end portion of the abovementioned second semiconductor chip projects out from the abovementioned first semiconductor chip toward a side other than the abovementioned two sides of the abovementioned wiring substrate. 6. The semiconductor device of claim 1, wherein the abovementioned first semiconductor chip is flip-chip connected to the abovementioned wiring substrate. 7. A method of manufacturing a semiconductor device, comprising:
(a) mounting a first semiconductor chip in a recessed portion of a wiring substrate having, on one surface, the abovementioned recessed portion and a plurality of connection pads; (b) stacking a second semiconductor chip, which has a plurality of electrode pads on an obverse surface of at least one end portion thereof, on the abovementioned first semiconductor chip in such a way that at least one end portion thereof projects out from the abovementioned first semiconductor chip; and (c) electrically connecting the plurality of connection pads on the abovementioned wiring substrate respectively, using wires, to the abovementioned plurality of electrode pads on the abovementioned second semiconductor chip;
wherein, abovementioned (b) comprises extending the abovementioned one end portion of the abovementioned second semiconductor chip beyond an inside surface of the abovementioned recessed portion and supporting it on one surface of the abovementioned wiring substrate. 8. The method of claim 7, wherein abovementioned (a) comprises:
forming the abovementioned wiring substrate by stacking on a lower substrate layer an upper substrate layer having an open portion or a groove portion corresponding to the planar shape of the abovementioned first semiconductor chip; and mounting the abovementioned first semiconductor chip in the abovementioned recessed portion comprising the abovementioned lower substrate layer and the abovementioned open portion or the abovementioned groove portion. 9. The method of claim 7, comprising:
(d) forming a sealing body on the abovementioned wiring substrate in such a way as to cover the abovementioned first semiconductor chip and the abovementioned second semiconductor chip. 10. The method of claim 7, wherein the abovementioned recessed portion extends as far as edges on two opposing sides of the abovementioned wiring substrate, and wherein abovementioned (b) comprises supporting the abovementioned one end portion of the abovementioned second semiconductor chip on one surface of the abovementioned wiring substrate in such a way that it projects out from the abovementioned first semiconductor chip toward a side other than the abovementioned two sides of the abovementioned wiring substrate. | 2,800 |
11,696 | 11,696 | 15,359,850 | 2,884 | An inverter for a computed tomography (CT) system is provided. The inverter includes a hybrid switch. The hybrid switch includes a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) portion, an insulated-gate bipolar transistor (IGBT) portion, a first gate associated within the SiC MOSFET portion, and a second gate associated with the IGBT portion. The SiC MOSFET portion and the IGBT portion of the hybrid switch are configured to be independently controlled via the first gate and the second gate. | 1. An X-ray generation system, comprising:
an X-ray source; a high voltage tank coupled to the X-ray source; an inverter coupled to the high voltage tank, wherein the inverter comprises:
a hybrid switch comprising a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) portion and an insulated-gate bipolar transistor (IGBT) portion; and
a controller programmed to control commutation of the hybrid switch based on a frequency and a power utilized by the X-ray generation system. 2. The X-ray generation system of claim 1, wherein the controller is programmed to independently control the SiC MOSFET portion and the IGBT portion of the hybrid switch. 3. The X-ray generation system of claim 2, wherein the hybrid switch comprises a first gate associated with the SiC MOSFET portion and a second gate associated with the IGBT portion to enable the independent control by the controller. 4. The X-ray generation system of claim 1, wherein the controller is programmed to utilize the SiC MOSFET portion and the IGBT portion differently based on the frequency and the power utilized by the X-ray generation system. 5. The X-ray generation system of claim 4, wherein, when the frequency is in a low frequency range and the power is in a high power range, the controller is programmed to utilize the IGBT portion. 6. The X-ray generation system of claim 4, wherein, when the frequency is in a high frequency range and the power is in a low power range, the controller is programmed to utilize SiC MOSFET portion. 7. The X-ray generation system of claim 4, wherein, when the frequency is in a medium frequency range and the power is in a medium power range, the controller is programmed to utilize both the IGBT portion and the SiC MOSFET portion. 8. The X-ray generation system of claim 7, wherein, when the frequency is in the medium frequency range and the power is in the medium power range, the controller is programmed in a sequential order to turn on only the IGBT portion to enable an entirety of the electrical current to flow through the IGBT portion, turn on the SiC MOSFET portion where most of the electrical current still flows through the IGBT portion, to switch off the IGBT portion to enable the entirety of the electrical current to flow through the SiC MOSFET portion, and to switch off the SiC MOSFET portion. 9. The X-ray generation system of claim 1, wherein the SiC MOSFET portion has a lower current rating than the IGBT portion. 10. The X-ray generation system of claim 1, wherein a respective power side of the SiC MOSFET portion and the IGBT portion are coupled together. 11. The X-ray generation system of claim 1, wherein the X-ray generation system is configured to be utilized with a computed tomography (CT) system. 12. A method for utilizing an inverter of a computed tomography (CT) system, comprising:
determining, via a controller, a power and a frequency for operation of the inverter, wherein the inverter comprises a hybrid switch comprising a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) portion and an insulated-gate bipolar transistor (IGBT) portion, and the SiC MOSFET portion has a lower current rating than the IGBT portion; and independently controlling, via the controller, which portion of the hybrid switch to utilize based on the power and the frequency. 13. The method of claim 12, comprising, when the frequency is in a low frequency range and the power is in a high power range, utilizing the IGBT portion of the hybrid switch via the controller. 14. The method of claim 12, comprising, when the frequency is in a high frequency range and the power is in a low power range, utilizing the SiC MOSFET portion of the hybrid switch via the controller. 15. The method of claim 12, comprising, when the frequency is in a medium frequency range and the power is in a medium power range, utilizing both the IGBT portion and the SiC MOSFET portion of the hybrid switch via the controller. 16. The method of claim 15, comprising, when the frequency is in a medium frequency range and the power is in a medium power range, sequentially, via the controller, turning on only the IGBT portion to enable an entirety of the electrical current to flow through the IGBT portion, turning on the SiC MOSFET portion where most of the electrical current still flows through the IGBT portion, switching off the IGBT portion to enable the entirety of the electrical current to flow through the SiC MOSFET portion, and switching off the SiC MOSFET portion. 17. An inverter for a computed tomography (CT) system, comprising:
a hybrid switch comprising:
a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) portion;
an insulated-gate bipolar transistor (IGBT) portion;
a first gate associated with the SiC MOSFET portion; and
a second gate associated with the IGBT portion;
wherein the SiC MOSFET portion and the IGBT portion of the hybrid switch are configured to be independently controlled via the first gate and the second gate. 18. The inverter of claim 17, wherein the SiC MOSFET portion has a lower current rating than the IGBT portion. 19. The inverter of claim 17, wherein a respective power side of the SiC MOSFET portion and the IGBT portion are coupled together. 20. The inverter of claim 17, wherein the SiC MOSFET portion and the IGBT portion are configured to be controlled differently based on a frequency and a power utilized by the CT system. | An inverter for a computed tomography (CT) system is provided. The inverter includes a hybrid switch. The hybrid switch includes a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) portion, an insulated-gate bipolar transistor (IGBT) portion, a first gate associated within the SiC MOSFET portion, and a second gate associated with the IGBT portion. The SiC MOSFET portion and the IGBT portion of the hybrid switch are configured to be independently controlled via the first gate and the second gate.1. An X-ray generation system, comprising:
an X-ray source; a high voltage tank coupled to the X-ray source; an inverter coupled to the high voltage tank, wherein the inverter comprises:
a hybrid switch comprising a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) portion and an insulated-gate bipolar transistor (IGBT) portion; and
a controller programmed to control commutation of the hybrid switch based on a frequency and a power utilized by the X-ray generation system. 2. The X-ray generation system of claim 1, wherein the controller is programmed to independently control the SiC MOSFET portion and the IGBT portion of the hybrid switch. 3. The X-ray generation system of claim 2, wherein the hybrid switch comprises a first gate associated with the SiC MOSFET portion and a second gate associated with the IGBT portion to enable the independent control by the controller. 4. The X-ray generation system of claim 1, wherein the controller is programmed to utilize the SiC MOSFET portion and the IGBT portion differently based on the frequency and the power utilized by the X-ray generation system. 5. The X-ray generation system of claim 4, wherein, when the frequency is in a low frequency range and the power is in a high power range, the controller is programmed to utilize the IGBT portion. 6. The X-ray generation system of claim 4, wherein, when the frequency is in a high frequency range and the power is in a low power range, the controller is programmed to utilize SiC MOSFET portion. 7. The X-ray generation system of claim 4, wherein, when the frequency is in a medium frequency range and the power is in a medium power range, the controller is programmed to utilize both the IGBT portion and the SiC MOSFET portion. 8. The X-ray generation system of claim 7, wherein, when the frequency is in the medium frequency range and the power is in the medium power range, the controller is programmed in a sequential order to turn on only the IGBT portion to enable an entirety of the electrical current to flow through the IGBT portion, turn on the SiC MOSFET portion where most of the electrical current still flows through the IGBT portion, to switch off the IGBT portion to enable the entirety of the electrical current to flow through the SiC MOSFET portion, and to switch off the SiC MOSFET portion. 9. The X-ray generation system of claim 1, wherein the SiC MOSFET portion has a lower current rating than the IGBT portion. 10. The X-ray generation system of claim 1, wherein a respective power side of the SiC MOSFET portion and the IGBT portion are coupled together. 11. The X-ray generation system of claim 1, wherein the X-ray generation system is configured to be utilized with a computed tomography (CT) system. 12. A method for utilizing an inverter of a computed tomography (CT) system, comprising:
determining, via a controller, a power and a frequency for operation of the inverter, wherein the inverter comprises a hybrid switch comprising a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) portion and an insulated-gate bipolar transistor (IGBT) portion, and the SiC MOSFET portion has a lower current rating than the IGBT portion; and independently controlling, via the controller, which portion of the hybrid switch to utilize based on the power and the frequency. 13. The method of claim 12, comprising, when the frequency is in a low frequency range and the power is in a high power range, utilizing the IGBT portion of the hybrid switch via the controller. 14. The method of claim 12, comprising, when the frequency is in a high frequency range and the power is in a low power range, utilizing the SiC MOSFET portion of the hybrid switch via the controller. 15. The method of claim 12, comprising, when the frequency is in a medium frequency range and the power is in a medium power range, utilizing both the IGBT portion and the SiC MOSFET portion of the hybrid switch via the controller. 16. The method of claim 15, comprising, when the frequency is in a medium frequency range and the power is in a medium power range, sequentially, via the controller, turning on only the IGBT portion to enable an entirety of the electrical current to flow through the IGBT portion, turning on the SiC MOSFET portion where most of the electrical current still flows through the IGBT portion, switching off the IGBT portion to enable the entirety of the electrical current to flow through the SiC MOSFET portion, and switching off the SiC MOSFET portion. 17. An inverter for a computed tomography (CT) system, comprising:
a hybrid switch comprising:
a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) portion;
an insulated-gate bipolar transistor (IGBT) portion;
a first gate associated with the SiC MOSFET portion; and
a second gate associated with the IGBT portion;
wherein the SiC MOSFET portion and the IGBT portion of the hybrid switch are configured to be independently controlled via the first gate and the second gate. 18. The inverter of claim 17, wherein the SiC MOSFET portion has a lower current rating than the IGBT portion. 19. The inverter of claim 17, wherein a respective power side of the SiC MOSFET portion and the IGBT portion are coupled together. 20. The inverter of claim 17, wherein the SiC MOSFET portion and the IGBT portion are configured to be controlled differently based on a frequency and a power utilized by the CT system. | 2,800 |
11,697 | 11,697 | 15,365,204 | 2,886 | An interferometer has a first input configured to provide a first measurement beam at a first frequency, and a second measurement signal at the first frequency. The interferometer has a second input configured to provide a reference beam at a second frequency that is different than the first frequency; an optical element comprising a first portion comprising a polarization beam splitter; and a diffraction grating disposed over the optical element configured to diffract the first measurement beam and the second measurement beam | 1. An apparatus comprising:
a first input configured to provide a first measurement beam at a first frequency, and a second measurement signal at the first frequency; a second input configured to provide a reference beam at a second frequency that is different than the first frequency; an optical element comprising a first portion comprising a polarization beam splitter; a diffraction grating disposed over the optical element configured to diffract the first measurement beam and the second measurement beam; and a first optical retarder configured to rotate a polarization axis of the first optical beam by approximately 90°; and a second optical retarder configured to rotate a polarization axis of the second optical beam by approximately 90°. 2. An apparatus as claimed in claim 1, wherein the first element is an optical plate, and the first portion is disposed so that the first measurement signal is incident thereon upon initial incidence. 3. An apparatus as claimed in claim 2, wherein the first measurement beam, after twice traversing the first optical retarder, traverses the first portion, and is incident on the second portion where it is reflected. 4. An apparatus as claimed in claim 1, wherein the optical element comprises a third portion disposed so the second measurement signal is incident thereon upon initial incidence. 5. An apparatus as claimed in claim 4, wherein the optical element comprises a fourth portion comprising a beam bender. 6. An apparatus as claimed in claim 5, wherein the second measurement beam, after twice traversing the first optical retarder, traverses the third portion, and is incident on the fourth portion where it is reflected. 7. An apparatus as claimed in claim 1, further comprising:
a third input configured to provide a third measurement beam at the first frequency, and a fourth measurement signal at the first frequency; a fourth input configured to provide a reference beam at the second frequency that is different than the first frequency; the optical element comprising a second portion comprising a polarization beam splitter, the diffraction grating configured to diffract the third measurement beam and the fourth measurement beam; a third optical retarder configured to rotate a polarization axis of the third optical beam by approximately 90°; and a fourth optical retarder configured to rotate a polarization axis of the fourth optical beam by approximately 90°. | An interferometer has a first input configured to provide a first measurement beam at a first frequency, and a second measurement signal at the first frequency. The interferometer has a second input configured to provide a reference beam at a second frequency that is different than the first frequency; an optical element comprising a first portion comprising a polarization beam splitter; and a diffraction grating disposed over the optical element configured to diffract the first measurement beam and the second measurement beam1. An apparatus comprising:
a first input configured to provide a first measurement beam at a first frequency, and a second measurement signal at the first frequency; a second input configured to provide a reference beam at a second frequency that is different than the first frequency; an optical element comprising a first portion comprising a polarization beam splitter; a diffraction grating disposed over the optical element configured to diffract the first measurement beam and the second measurement beam; and a first optical retarder configured to rotate a polarization axis of the first optical beam by approximately 90°; and a second optical retarder configured to rotate a polarization axis of the second optical beam by approximately 90°. 2. An apparatus as claimed in claim 1, wherein the first element is an optical plate, and the first portion is disposed so that the first measurement signal is incident thereon upon initial incidence. 3. An apparatus as claimed in claim 2, wherein the first measurement beam, after twice traversing the first optical retarder, traverses the first portion, and is incident on the second portion where it is reflected. 4. An apparatus as claimed in claim 1, wherein the optical element comprises a third portion disposed so the second measurement signal is incident thereon upon initial incidence. 5. An apparatus as claimed in claim 4, wherein the optical element comprises a fourth portion comprising a beam bender. 6. An apparatus as claimed in claim 5, wherein the second measurement beam, after twice traversing the first optical retarder, traverses the third portion, and is incident on the fourth portion where it is reflected. 7. An apparatus as claimed in claim 1, further comprising:
a third input configured to provide a third measurement beam at the first frequency, and a fourth measurement signal at the first frequency; a fourth input configured to provide a reference beam at the second frequency that is different than the first frequency; the optical element comprising a second portion comprising a polarization beam splitter, the diffraction grating configured to diffract the third measurement beam and the fourth measurement beam; a third optical retarder configured to rotate a polarization axis of the third optical beam by approximately 90°; and a fourth optical retarder configured to rotate a polarization axis of the fourth optical beam by approximately 90°. | 2,800 |
11,698 | 11,698 | 15,050,907 | 2,856 | Techniques for determining mudcake properties include positioning a member of a test apparatus into a prepared mudcake sample at a specified depth of the mudcake sample, the mudcake sample associated with a drilling fluid and including a specified thickness; detecting, with the test apparatus, a force exerted on the member relative to a displacement distance of the member from the specified depth in the mudcake sample during removal of the member from the mudcake sample; recording, with the test apparatus, the detected force relative to the displacement distance; and determining, with the test apparatus, one or more properties of the mudcake sample based on the recorded force relative to the displacement distance. | 1. A method, comprising:
positioning a member of a test apparatus into a prepared mudcake sample at a specified depth of the mudcake sample, the mudcake sample associated with a drilling fluid and comprising a specified thickness; detecting, with the test apparatus, a force exerted on the member relative to a displacement distance of the member from the specified depth in the mudcake sample during removal of the member from the mudcake sample; recording, with the test apparatus, the detected force relative to the displacement distance; and determining, with the test apparatus, one or more properties of the mudcake sample based on the recorded force relative to the displacement distance. 2. The method of claim 1, further comprising preparing the mudcake sample to the specified thickness. 3. The method of claim 1, further comprising initiating removal of the member from the mudcake sample by the force exerted on the member by the test apparatus. 4. The method of claim 1, wherein the specified thickness is 10 mm and the specified depth is 5 mm. 5. The method of claim 1, further comprising removing the member from the mudcake sample by the force exerted on the member by the test apparatus. 6. The method of claim 1, wherein removing the member from the mudcake sample by the force exerted on the member by the test apparatus comprises removing the member from the mudcake sample at a constant removal rate and in a linear direction. 7. The method of claim 1, further comprising maintaining, for a specified time duration, the member in the mudcake sample prior to initiating removal of the member from the mudcake sample. 8. The method of claim 7, wherein the specified time duration comprises 2 minutes. 9. The method of claim 1, wherein the member comprises a spherical member. 10. The method of claim 1, wherein preparing the mudcake sample comprises filtering the mudcake sample for a specified time duration. 11. The method of claim 10, wherein filtering the mudcake sample for a specified time duration comprises filtering the mudcake sample from between one hour and 48 hours. 12. The method of claim 1, wherein the mudcake sample comprises one of: a bentonite drilling fluid, a bentonite-salt drilling fluid, a potassium chloride polymer, or a low solids non-dispersed (LSND) drilling fluid. 13. The method of claim 1, wherein one or more properties of the mudcake sample comprise a sticking bond modulus (SBM) and an ultimate sticking bond strength (USBS). 14. The method of claim 1, further comprising graphically recording the force exerted on the member relative to the displacement distance. 15. The method of claim 14, further comprising determining at least one of the one or more properties based, at least in part, on the graphical recording of the force exerted on the member relative to the displacement distance. 16. The method of claim 14, wherein the graphical recording of the force exerted on the member relative to the displacement distance comprises a linear portion and a non-linear portion, the method further comprising:
determining the SBM of the mudcake sample based on a slope of the non-linear portion of the graphical recording of the force exerted on the member relative to the displacement distance; and determining the USBS of the mudcake sample based on a peak exerted force value of the graphical recording of the force exerted on the member relative to the displacement distance. 17. A mudcake testing system, comprising:
a test apparatus comprising:
a mudcake holder configured to restrain the mudcake sample in a stationary position;
a load cell; and
a testing member coupled to the load cell; and
a control system communicably coupled to the test apparatus and configured to perform operations comprising:
controlling the load cell to position the member into the mudcake sample at a specified depth of the mudcake sample;
controlling the load cell to initiate removal of the member from the mudcake sample by a force exerted on the member by the load cell;
detecting, with the test apparatus, a force exerted on the member relative to a displacement distance of the member from the specified depth in the mudcake sample during removal of the member from the mudcake sample;
recording, with the test apparatus, the detected force relative to the displacement distance; and
determining one or more properties of the mudcake sample based on the recorded force relative to the displacement distance. 18. The mudcake testing system of claim 17, further comprising a mudcake preparation assembly configured to prepare a mudcake sample associated with a drilling fluid, the mudcake sample comprising a specified thickness; 19. The mudcake testing system of claim 17, wherein the specified thickness is 10 mm and the specified depth is 5 mm. 20. The mudcake testing system of claim 17, wherein the control system is further configured to perform operations comprising controlling the load cell to remove the member from the mudcake sample by the force exerted on the member by the test apparatus. 21. The mudcake testing system of claim 17, wherein removing the member from the mudcake sample by the force exerted on the member by the test apparatus comprises removing the member from the mudcake sample at a constant removal rate and in a linear direction. 22. The mudcake testing system of claim 17, wherein the control system is further configured to perform operations comprising maintaining, for a specified time duration, the member of the test apparatus in the mudcake sample prior to controlling the load cell to initiate removal of the member from the mudcake sample. 23. The mudcake testing system of claim 23, wherein the specified time duration comprises 2 minutes. 24. The mudcake testing system of claim 17, wherein the member comprises a spherical member. 25. The mudcake testing system of claim 17, wherein the mudcake preparation assembly comprises a filter and a metallic screen. 26. The mudcake testing system of claim 17, wherein the mudcake preparation assembly is configured to filter the mudcake sample for a specified time duration. 27. The mudcake testing system of claim 26, wherein the specified time duration comprises between one hour and 48 hours. 28. The mudcake testing system of claim 17, wherein the mudcake sample comprises one of: a bentonite drilling fluid, a bentonite-salt drilling fluid, a potassium chloride polymer, or a low solids non-dispersed (LSND) drilling fluid. 29. The mudcake testing system of claim 17, wherein the one or more properties of the mudcake sample comprise a sticking bond modulus (SBM) and an ultimate sticking bond strength (USBS). 30. The mudcake testing system of claim 17, wherein the control system is further configured to perform operations comprising:
graphically recording the force exerted on the member relative to the displacement distance; and determining at least one of the one or more properties based, at least in part, on the graphical recording of the force exerted on the member relative to the displacement distance. 31. The mudcake testing system of claim 30, wherein the graphical recording of the force exerted on the member relative to the displacement distance comprises a linear portion and a non-linear portion, and the control system is further configured to perform operations comprising:
determining the SBM of the mudcake sample based on a slope of the non-linear portion of the graphical recording of the force exerted on the member relative to the displacement distance; and determining the USBS of the mudcake sample based on a peak exerted force value of the graphical recording of the force exerted on the member relative to the displacement distance. | Techniques for determining mudcake properties include positioning a member of a test apparatus into a prepared mudcake sample at a specified depth of the mudcake sample, the mudcake sample associated with a drilling fluid and including a specified thickness; detecting, with the test apparatus, a force exerted on the member relative to a displacement distance of the member from the specified depth in the mudcake sample during removal of the member from the mudcake sample; recording, with the test apparatus, the detected force relative to the displacement distance; and determining, with the test apparatus, one or more properties of the mudcake sample based on the recorded force relative to the displacement distance.1. A method, comprising:
positioning a member of a test apparatus into a prepared mudcake sample at a specified depth of the mudcake sample, the mudcake sample associated with a drilling fluid and comprising a specified thickness; detecting, with the test apparatus, a force exerted on the member relative to a displacement distance of the member from the specified depth in the mudcake sample during removal of the member from the mudcake sample; recording, with the test apparatus, the detected force relative to the displacement distance; and determining, with the test apparatus, one or more properties of the mudcake sample based on the recorded force relative to the displacement distance. 2. The method of claim 1, further comprising preparing the mudcake sample to the specified thickness. 3. The method of claim 1, further comprising initiating removal of the member from the mudcake sample by the force exerted on the member by the test apparatus. 4. The method of claim 1, wherein the specified thickness is 10 mm and the specified depth is 5 mm. 5. The method of claim 1, further comprising removing the member from the mudcake sample by the force exerted on the member by the test apparatus. 6. The method of claim 1, wherein removing the member from the mudcake sample by the force exerted on the member by the test apparatus comprises removing the member from the mudcake sample at a constant removal rate and in a linear direction. 7. The method of claim 1, further comprising maintaining, for a specified time duration, the member in the mudcake sample prior to initiating removal of the member from the mudcake sample. 8. The method of claim 7, wherein the specified time duration comprises 2 minutes. 9. The method of claim 1, wherein the member comprises a spherical member. 10. The method of claim 1, wherein preparing the mudcake sample comprises filtering the mudcake sample for a specified time duration. 11. The method of claim 10, wherein filtering the mudcake sample for a specified time duration comprises filtering the mudcake sample from between one hour and 48 hours. 12. The method of claim 1, wherein the mudcake sample comprises one of: a bentonite drilling fluid, a bentonite-salt drilling fluid, a potassium chloride polymer, or a low solids non-dispersed (LSND) drilling fluid. 13. The method of claim 1, wherein one or more properties of the mudcake sample comprise a sticking bond modulus (SBM) and an ultimate sticking bond strength (USBS). 14. The method of claim 1, further comprising graphically recording the force exerted on the member relative to the displacement distance. 15. The method of claim 14, further comprising determining at least one of the one or more properties based, at least in part, on the graphical recording of the force exerted on the member relative to the displacement distance. 16. The method of claim 14, wherein the graphical recording of the force exerted on the member relative to the displacement distance comprises a linear portion and a non-linear portion, the method further comprising:
determining the SBM of the mudcake sample based on a slope of the non-linear portion of the graphical recording of the force exerted on the member relative to the displacement distance; and determining the USBS of the mudcake sample based on a peak exerted force value of the graphical recording of the force exerted on the member relative to the displacement distance. 17. A mudcake testing system, comprising:
a test apparatus comprising:
a mudcake holder configured to restrain the mudcake sample in a stationary position;
a load cell; and
a testing member coupled to the load cell; and
a control system communicably coupled to the test apparatus and configured to perform operations comprising:
controlling the load cell to position the member into the mudcake sample at a specified depth of the mudcake sample;
controlling the load cell to initiate removal of the member from the mudcake sample by a force exerted on the member by the load cell;
detecting, with the test apparatus, a force exerted on the member relative to a displacement distance of the member from the specified depth in the mudcake sample during removal of the member from the mudcake sample;
recording, with the test apparatus, the detected force relative to the displacement distance; and
determining one or more properties of the mudcake sample based on the recorded force relative to the displacement distance. 18. The mudcake testing system of claim 17, further comprising a mudcake preparation assembly configured to prepare a mudcake sample associated with a drilling fluid, the mudcake sample comprising a specified thickness; 19. The mudcake testing system of claim 17, wherein the specified thickness is 10 mm and the specified depth is 5 mm. 20. The mudcake testing system of claim 17, wherein the control system is further configured to perform operations comprising controlling the load cell to remove the member from the mudcake sample by the force exerted on the member by the test apparatus. 21. The mudcake testing system of claim 17, wherein removing the member from the mudcake sample by the force exerted on the member by the test apparatus comprises removing the member from the mudcake sample at a constant removal rate and in a linear direction. 22. The mudcake testing system of claim 17, wherein the control system is further configured to perform operations comprising maintaining, for a specified time duration, the member of the test apparatus in the mudcake sample prior to controlling the load cell to initiate removal of the member from the mudcake sample. 23. The mudcake testing system of claim 23, wherein the specified time duration comprises 2 minutes. 24. The mudcake testing system of claim 17, wherein the member comprises a spherical member. 25. The mudcake testing system of claim 17, wherein the mudcake preparation assembly comprises a filter and a metallic screen. 26. The mudcake testing system of claim 17, wherein the mudcake preparation assembly is configured to filter the mudcake sample for a specified time duration. 27. The mudcake testing system of claim 26, wherein the specified time duration comprises between one hour and 48 hours. 28. The mudcake testing system of claim 17, wherein the mudcake sample comprises one of: a bentonite drilling fluid, a bentonite-salt drilling fluid, a potassium chloride polymer, or a low solids non-dispersed (LSND) drilling fluid. 29. The mudcake testing system of claim 17, wherein the one or more properties of the mudcake sample comprise a sticking bond modulus (SBM) and an ultimate sticking bond strength (USBS). 30. The mudcake testing system of claim 17, wherein the control system is further configured to perform operations comprising:
graphically recording the force exerted on the member relative to the displacement distance; and determining at least one of the one or more properties based, at least in part, on the graphical recording of the force exerted on the member relative to the displacement distance. 31. The mudcake testing system of claim 30, wherein the graphical recording of the force exerted on the member relative to the displacement distance comprises a linear portion and a non-linear portion, and the control system is further configured to perform operations comprising:
determining the SBM of the mudcake sample based on a slope of the non-linear portion of the graphical recording of the force exerted on the member relative to the displacement distance; and determining the USBS of the mudcake sample based on a peak exerted force value of the graphical recording of the force exerted on the member relative to the displacement distance. | 2,800 |
11,699 | 11,699 | 15,533,261 | 2,872 | The present invention provides a light control panel, including a plurality of band-shaped planar light-reflecting portions in each of which layers of a cured product of an allyl ester resin composition, which cured product is excellent in optical characteristics, surface hardness and strength, and metal film layers are alternately laminated in a plane direction (direction vertical to a thickness). The allyl ester resin composition preferably contains an allyl ester oligomer having a group represented by the formula (2) as a terminal group, and having a structure represented by the formula (3) as a structural unit (the symbols in formulae (2) and (3) have the same meanings as those described in the description). | 1. A light control panel, including a plurality of band-shaped planar light-reflecting portions in each of which layers of a cured product of an allyl ester resin composition and metal film layers are alternately laminated in a plane direction (direction vertical to a thickness). 2. The light control panel according to claim 1, in which the allyl ester resin composition contains an allyl ester oligomer having a group represented by the formula (2) as a terminal group, and having a structure represented by the formula (3) as a structural unit:
where R3 represents an allyl group or a methallyl group, and A2 represents one or more kinds of organic residues each having an alicyclic structure and/or an aromatic ring structure derived from a dicarboxylic acid;
where A3 represents one or more kinds of organic residues each having an alicyclic structure and/or an aromatic ring structure derived from a dicarboxylic acid, and X represents one or more kinds of organic residues each derived from a polyhydric alcohol, provided that X may further have, through an ester bond, a branched structure having a group represented by the formula (2) as a terminal group, and having a structure represented by the formula (3) as a structural unit. 3. The light control panel according to claim 1, in which the metal film layers are each selected from aluminum, silver, and chromium. 4. The light control panel according to claim 1, in which the layers of the cured product of the allyl ester resin composition each have a thickness of from 0.2 mm to 0.5 mm. 5. An optical imaging device, including the two light control panels described in claim 1, in which the band-shaped planar light-reflecting portions of a first light control panel and a second light control panel are arranged to be perpendicular to each other. | The present invention provides a light control panel, including a plurality of band-shaped planar light-reflecting portions in each of which layers of a cured product of an allyl ester resin composition, which cured product is excellent in optical characteristics, surface hardness and strength, and metal film layers are alternately laminated in a plane direction (direction vertical to a thickness). The allyl ester resin composition preferably contains an allyl ester oligomer having a group represented by the formula (2) as a terminal group, and having a structure represented by the formula (3) as a structural unit (the symbols in formulae (2) and (3) have the same meanings as those described in the description).1. A light control panel, including a plurality of band-shaped planar light-reflecting portions in each of which layers of a cured product of an allyl ester resin composition and metal film layers are alternately laminated in a plane direction (direction vertical to a thickness). 2. The light control panel according to claim 1, in which the allyl ester resin composition contains an allyl ester oligomer having a group represented by the formula (2) as a terminal group, and having a structure represented by the formula (3) as a structural unit:
where R3 represents an allyl group or a methallyl group, and A2 represents one or more kinds of organic residues each having an alicyclic structure and/or an aromatic ring structure derived from a dicarboxylic acid;
where A3 represents one or more kinds of organic residues each having an alicyclic structure and/or an aromatic ring structure derived from a dicarboxylic acid, and X represents one or more kinds of organic residues each derived from a polyhydric alcohol, provided that X may further have, through an ester bond, a branched structure having a group represented by the formula (2) as a terminal group, and having a structure represented by the formula (3) as a structural unit. 3. The light control panel according to claim 1, in which the metal film layers are each selected from aluminum, silver, and chromium. 4. The light control panel according to claim 1, in which the layers of the cured product of the allyl ester resin composition each have a thickness of from 0.2 mm to 0.5 mm. 5. An optical imaging device, including the two light control panels described in claim 1, in which the band-shaped planar light-reflecting portions of a first light control panel and a second light control panel are arranged to be perpendicular to each other. | 2,800 |
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